WO2014003107A1 - Crimping device and crimping method - Google Patents

Crimping device and crimping method Download PDF

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Publication number
WO2014003107A1
WO2014003107A1 PCT/JP2013/067624 JP2013067624W WO2014003107A1 WO 2014003107 A1 WO2014003107 A1 WO 2014003107A1 JP 2013067624 W JP2013067624 W JP 2013067624W WO 2014003107 A1 WO2014003107 A1 WO 2014003107A1
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WO
WIPO (PCT)
Prior art keywords
sheet
pressure
elastic sheet
chip
substrate
Prior art date
Application number
PCT/JP2013/067624
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French (fr)
Japanese (ja)
Inventor
寺田　勝美
奈良場　聰
Original Assignee
東レエンジニアリング株式会社
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Publication date
Application filed by 東レエンジニアリング株式会社 filed Critical 東レエンジニアリング株式会社
Priority to KR1020157002389A priority Critical patent/KR102117726B1/en
Priority to JP2014522673A priority patent/JP6029245B2/en
Publication of WO2014003107A1 publication Critical patent/WO2014003107A1/en

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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Definitions

  • the present invention relates to a crimping apparatus and a crimping method for collectively crimping a plurality of chips temporarily bonded to a substrate via an adhesive.
  • a method of manufacturing a CSP (Chip Size Package) at a wafer level has been performed in response to the demand for higher integration and higher density of LSI chips.
  • a flip chip is pressure-bonded to a silicon wafer on which a circuit is formed, and then diced to manufacture a CSP.
  • the wafer and the flip chip are preliminarily pressure-bonded (temporarily connected) using an adhesive such as a thermosetting resin or an anisotropic conductive adhesive.
  • the plurality of flip chips on the wafer are heated and cooled at a predetermined time and at a predetermined temperature to complete the pressure bonding.
  • Patent Document 1 as a crimping device for manufacturing a CSP at the wafer level, a cylindrical cylinder, a base provided to seal one side thereof, a lid on the other side of the cylinder, and the inside of the cylinder
  • the pressure bonding apparatus comprised from the metal piston which moves is disclosed.
  • the volume of the sealed space in the cylinder is reduced by moving the piston.
  • An interposer is placed on the base by being temporarily connected to the silicon wafer with an insulating adhesive film, and a sheet member covers the temporarily connected silicon wafer.
  • a heater is embedded in the base.
  • a pressurized compressed gas is introduced into the cylinder, the temporarily connected silicon wafer is fully pressurized through the sheet member, the heater is energized, the insulating adhesive film is melted, and each silicon wafer is melted.
  • the electrode and each electrode of the interposer are electrically connected to produce a CSP connection body.
  • the invention described in claim 1 After aligning a plurality of chips on a substrate, a crimping device that collectively crimps a chip temporarily bonded via a resin, A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped; An elastic sheet covering the surface of the temporarily crimped chip; A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage; Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; And a bonding head that applies a predetermined pressure to a chip on a substrate via an elastic sheet.
  • the invention according to claim 2 is the invention according to claim 1, It is a pressure bonding apparatus provided with a sheet supply means for supplying the elastic sheet as a single sheet.
  • the invention according to claim 3 is the invention according to claim 1 or 2
  • the pressure bonding apparatus includes a gas supply unit that supplies an inert gas to a sealed space formed by the sheet holding unit, the elastic sheet, and the substrate stage.
  • the invention according to claim 4 is the invention according to any one of claims 1 to 3,
  • the pressure bonding apparatus includes heating and cooling means for the bonding head and the substrate stage.
  • the invention according to claim 5 is the invention according to any one of claims 1 to 4,
  • the pressure bonding apparatus has a function of lowering the pressure surface of the bonding head while maintaining a state parallel to the substrate stage.
  • a chip that is temporarily press-bonded via a resin is a pressure-bonding method that collectively press-bonds, A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped; An elastic sheet covering the surface of the temporarily crimped chip; A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage; Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; A bonding head that applies a predetermined pressing force to the chip on the substrate via the elastic sheet, A step of placing the substrate on which the chip is temporarily pressure-bonded on the substrate stage; Covering the surface of the chip temporarily bonded with the elastic sheet, and holding the elastic sheet; A step of reducing the pressure of the sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage; And a step of lowering the bonding head to a predetermined height and applying a predetermined pressure
  • the invention according to claim 7 is the invention according to claim 6, This is a pressure-bonding method including a step of supplying an elastic sheet as a single sheet and replacing the elastic sheet for each batch pressure bonding operation.
  • the invention according to claim 8 is the invention according to claim 6 or 7, A method for pressure bonding, characterized in that a material having a heat resistant temperature of 350 ° C. or higher, a thermal shrinkage rate of 350 ° C. of 0.1% or lower, and a thermal conductivity of 1 W / m ⁇ K or higher is used for the elastic sheet. It is.
  • the invention according to claim 9 is the invention according to any one of claims 6 to 8,
  • the method includes a step of operating heating and cooling means provided in the bonding head and the substrate stage.
  • the invention according to claim 10 is the invention according to any one of claims 6 to 9,
  • the pressure-bonding method includes a step of bringing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage into an inert gas atmosphere.
  • the pressure surface of the bonding head is lowered while maintaining a state parallel to the substrate stage. This is a crimping method.
  • the bonding head presses the chip with a predetermined pressure through the elastic sheet, the chip and the substrate are crimped without being displaced when the adhesive melts. Become so.
  • a sealed space can be locally formed and replaced under reduced pressure, it is possible to perform pressure bonding at a time while preventing bump oxidation with a simple structure without requiring a large chamber structure. it can.
  • voids due to outgas generated when the adhesive is cured by heating can be bonded together while suppressing voids by bonding under reduced pressure.
  • the adhesive that protrudes from the periphery of the chip adheres to the bonding head side when the chips temporarily bonded with the adhesive are collectively bonded. Can be prevented. Further, the adhesive can be cured and the bumps can be bonded together by heating and cooling from the bonding head and the substrate stage. Further, by supplying the elastic sheet as a single sheet, the wafer can be easily replaced at a high speed, and the crimping can be continuously performed.
  • FIG. 1 is a schematic side view of a crimping apparatus according to an embodiment of the present invention. It is a top view explaining arrangement
  • FIG. 1 is a side view of a crimping apparatus according to an embodiment of the present invention.
  • the left-right direction is the X axis
  • the front-rear direction is the Y axis
  • the axis perpendicular to the XY plane composed of the X axis and the Y axis is the Z axis (vertical direction), Axis.
  • the crimping apparatus 1 includes a pressurizing unit 20 that performs final pressure bonding of the wafer 2 on which the chip 3 is temporarily bonded via the adhesive 4, a substrate stage 40 that holds the wafer 2, and a sheet 5 that covers the chip 3 during the final pressure bonding.
  • the sheet supply means 50 to supply, the sheet holding means 60 to hold the sheet 5 on the outer periphery of the substrate stage 4, and the gas supply means 70 to supply an inert gas onto the wafer 2 are configured.
  • the chip 3 is previously aligned at a predetermined position on the wafer 2 and bonded using an adhesive (hereinafter, the chip 3 is temporarily bonded to the wafer 2). Notation).
  • the pressurizing means 20 includes a portal frame 21, a bonding head support portion 22 provided on a horizontal beam portion 21 a of the portal frame 21, and a cylindrical bonding head 23.
  • the vertical column portion 21b of the portal frame 21 has a highly rigid guide structure and is supported by the rigid guide 21c.
  • the vertical column portion 21b can be vertically expanded and contracted, and is connected to a vertical driving means (not shown).
  • the bonding head 23 can be moved in the Z direction (up and down direction) by the vertical movement of the vertical column portion 21b by the vertical driving means.
  • the rigid guide 21 c is erected on the base 6.
  • the portal frame 21 includes four vertical column portions 21b and four rigid guides 21c that support the respective vertical column portions 21b.
  • FIG. 2 shows the arrangement in an XY plane when viewed from the top, and four vertical pillars 21b (21b1, 21b2, 21b3, 21b4) and four rigid guides 21c (21c1, 21c2, 21c3, 21c4) are arranged.
  • the parallelism of the horizontal beam portion 21a of the portal frame 21 with respect to the substrate stage 40 is ensured.
  • the bonding head 23 includes a heater 43 that heats from the chip side of the wafer 2 on which the chip 3 is mounted, and a cooling unit 45 that cools the heated bonding head 23.
  • the substrate stage 40 includes a suction hole 41 that holds the back surface 2 b of the wafer 2 by suction, a heater 42 that heats the wafer 2, and a cooling unit 44 that cools the heated substrate stage 40.
  • the suction hole 41 is connected to a suction pump through a suction pipe (not shown).
  • the fixing means for the wafer 2 may not be an adsorption method using the suction holes 41 as long as it is firmly fixed to the substrate stage 40, such as a mechanical clamping method or an electrostatic chuck method.
  • a sheet holding means 60 is provided on the outer periphery of the substrate stage 40.
  • the sheet holding means 60 has an inner wall 61 and an outer wall 62 erected along the outer periphery of the substrate stage 40, and is placed on the upper part of the sheet holding means 60 by a suction space 63 that is a space sandwiched between the inner wall 61 and the outer wall 62.
  • the sheet 5 is sucked.
  • the inner wall 61 and the outer wall 62 extend to a position higher than the height at which the temporary crimped corner wafer 2 of the chip 3 is placed on the substrate stage 40.
  • the sheet holding means 60 may not be a suction method using the suction space 63 as long as the sheet holding means 60 is mechanically clamped to the inner wall 61.
  • the mechanism can be simplified since the bonding head 23 can be clamped at the same time.
  • a decompression means 80 is provided between the inner wall 61 and the substrate stage 40.
  • the decompression means 80 is provided with a decompression port 81 and can be decompressed by vacuum suction of a sealed space formed by the sheet holding means 60, the elastic sheet 5 and the substrate stage 40 by a vacuum pump.
  • a gas supply means 70 is provided between the inner wall 61 and the substrate stage 40.
  • the gas supply means 70 is provided with a supply port 71, and nitrogen (N 2) that is an inert gas is supplied from the supply port 71.
  • N 2 nitrogen
  • the sheet holding means 60, the gas supply means 70, and the decompression means 80 are indicated by oblique lines.
  • the sheet supply unit 50 includes a sheet unwinding unit 51 for supplying the roll-shaped sheet 5, a sheet gripping unit 53 for gripping the sheet 5 unwound from the sheet unwinding unit 51, and a sheet pulling unit 52 for pulling out the sheet 5. And a sheet cutting part 54 for cutting the drawn sheet 5.
  • the sheet unwinding portion 51 is disposed on the side portion of the portal frame 21.
  • the sheet drawing portion 52 moves in the X direction (horizontal direction) while gripping the sheet 5 inside the portal frame 21, and covers the sheet 5 on the upper portion of the wafer 2 where the chip 3 is temporarily crimped.
  • the sheet cutting part 54 is located between the sheet gripping part 53 and the sheet pulling part 52 and cuts the drawn sheet 5 while being gripped by the sheet gripping part 53 and the sheet pulling part 52. .
  • the sheet drawer 52 and the sheet gripper 53 are configured to be movable in the Z direction (vertical direction) while gripping the sheet 5.
  • the heat resistance temperature, heat shrinkage rate, and heat conductivity of the fluorine resin are not sufficient characteristics in the batch crimping application as in this embodiment. . That is, in the case of batch crimping, the temperature of the heater 43 may reach a maximum of 350 ° C., so heat resistance is insufficient, wrinkles may occur due to heat shrinkage, and mounting displacement may occur, and the thermal conductivity is low. There is a problem that the set temperature of the heater 43 for heating the chip to a predetermined temperature increases. For this reason, the required characteristics of the sheet 5 include a heat-resistant temperature of 350 ° C.
  • fluorine-based resin is about 260 ° C.
  • heat shrinkage 0.1% or less at 350 ° C. It is desirable that the thermal conductivity is 1 W / m ⁇ K or more (or 0.3 W / m ⁇ K for fluorine-based resin).
  • the description starts from a state in which the wafer 2 to which the chip 3 is temporarily bonded is placed on the substrate stage 40 with the bonding head 23 raised (step SP01).
  • the sheet 5 is pulled out from the sheet unwinding portion 51.
  • a sheet pulling portion 52 is used for pulling out the sheet 5.
  • the sheet drawer 52 grips the sheet 5 and moves in the X direction (horizontal direction) so as to straddle the sheet holding means 60.
  • the sheet drawing portion 52 moves in the X direction, the upper surface side of the wafer 2 to which the chips 3 are temporarily bonded is covered with the sheet 5.
  • the sheet 5 is pulled out so as to pass between the bonding head 23 and the wafer 2.
  • the sheet gripping portion 53 and the sheet drawing portion 52 gripping the sheet, the sheet 5 is lowered and the sheet 5 is set on the upper surface of the chip 3 (step SP02).
  • the sheet cutting unit 54 cuts the sheet 5, and the sheet drawing unit 52 returns to the original position (standby position) (FIG. 4).
  • a suction pump (not shown) connected to the suction space 63 of the sheet holding means 60 operates to suck the sheet 5 (step SP03).
  • the bonding head 23 is lowered and the chip 2 is attached to the wafer 3 via the sheet 5 as shown in FIG. Pressurize.
  • the bonding head 23 is lowered, the height of the four vertical pillar portions 21b (21b1, 21b2, 21b3, 21b4) shown in FIG.
  • control is performed so that the pressure surface of the bonding head 23 is not inclined. Specifically, control is performed so that the maximum value and the minimum value of the four vertical columnar portions 21b are within a predetermined deviation (for example, 3 ⁇ m when the wafer size is 300 mm), and the pressure surface of the bonding head 23 is controlled.
  • step SP04 After contacting the chip 2, pressure is applied so that a predetermined load is applied to all the chips 3 mounted on the wafer 2 (step SP04).
  • step SP05 the air in the space surrounded by the sheet 5, the substrate stage 40, and the inner wall 61 of the sheet holding means 60 is sucked by the decompression means 80 to make a vacuum.
  • step SP06 the heaters 42 and 43 provided in the bonding head 23 and the substrate stage 40 are heated to start the heat curing of the adhesive 4 (step SP06).
  • the bumps of the chip 3 and the electrodes formed on the circuit surface of the wafer 2 are simultaneously connected.
  • the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. .
  • produces when an adhesive heat-hardens is suppressed, and it will be in a joining state with sufficient quality.
  • an inert gas is supplied from the supply port 71 of the gas supply unit 70 after vacuum suction, so that the sheet 5, the substrate stage 40, and the sheet holding unit 60 The space surrounded by the inner wall 61 is replaced with an inert gas.
  • the entire periphery of the wafer 2 to which the chip 2 is temporarily press-bonded becomes an inert gas atmosphere, and oxidation of the electrode of the chip 2 is prevented (step SP07).
  • the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. .
  • the pressure and heating temperature can be controlled in multiple stages at arbitrary timings according to the number of chips to be crimped, the number of bumps, the curing reaction of the adhesive, and the melting temperature of the bumps.
  • step SP08 After pressurization and heating for a predetermined time, the bonding head 23 is raised and the main press bonding is completed.
  • the portal frame 21 has a predetermined length in order to reduce an error when performing the height monitoring of the four vertical pillars 21b (21b1, 21b2, 21b3, 21b4). It is necessary to calibrate the height monitoring function at intervals.
  • a bonding head 23 as shown in FIGS. 9 and 10 is placed on a substrate stage 40 in which four load cells 91, 92, 93, 94 having the same specifications are arranged instead of a wafer.
  • the zero point is set when the two surfaces are close to each other and are closest to each other in a parallel state. That is, whether or not both surfaces are in close contact with each other in parallel via the load cell is determined by whether the maximum value and the minimum value of the applied pressure detected by each of the four load cells are in an equilibrium state within a predetermined deviation.
  • the load cell is arranged on the substrate stage 41 when the height monitoring function is calibrated.
  • the load cell may be permanently installed between the substrate stage 41 and the heater 42.
  • the number is not limited to four, but three or five or more. It may be.

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Abstract

Provided are a crimping device and crimping method capable of crimping a plurality of chips, which are temporarily crimped to a substrate using an adhesive agent, to a substrate in a group without causing mounting displacement. Specifically, provided are a crimping method and crimping device provided with: a substrate stage for holding the back surface of the substrate to which the chips will be crimped using suction; an elastic sheet for covering the front surface of the temporarily crimped chips; a sheet-holding means positioned on the outer periphery of the substrate stage, for holding the elastic sheet; a depressurizing means for depressurizing the sealed space formed by the sheet-holding means, the elastic sheet, and the substrate stage; and a bonding head for applying a predetermined pressure to the chip on the substrate via the elastic sheet.

Description

圧着装置および圧着方法Crimping apparatus and crimping method
　基板に接着剤を介して仮圧着された複数のチップを基板に一括圧着する圧着装置および圧着方法に関する。 The present invention relates to a crimping apparatus and a crimping method for collectively crimping a plurality of chips temporarily bonded to a substrate via an adhesive.
　近年、ＬＳＩチップの高集積化・高密度化の要求に対して、ウエハレベルでＣＳＰ（Chip　Size　Package）を製造する方法が行われている。ウエハレベルＣＳＰでは、回路が形成されたシリコンウエハに対してフリップチップを圧着した後、ダイシングしてＣＳＰを製造している。ウエハとフリップチップは、熱硬化性樹脂や異方導電性接着剤などの接着剤を用いて予め仮圧着（仮接続）されている。仮圧着の後、ウエハ上の複数のフリップチップは、所定時間の加圧と所定温度で加熱及び冷却が行われ圧着が完了する。 In recent years, a method of manufacturing a CSP (Chip Size Package) at a wafer level has been performed in response to the demand for higher integration and higher density of LSI chips. In the wafer level CSP, a flip chip is pressure-bonded to a silicon wafer on which a circuit is formed, and then diced to manufacture a CSP. The wafer and the flip chip are preliminarily pressure-bonded (temporarily connected) using an adhesive such as a thermosetting resin or an anisotropic conductive adhesive. After the provisional pressure bonding, the plurality of flip chips on the wafer are heated and cooled at a predetermined time and at a predetermined temperature to complete the pressure bonding.
　例えば、特許文献１では、ウエハレベルでＣＳＰを製造する圧着装置として、円筒状のシリンダと、その一方側を密閉するように設けられた基台と、シリンダの他方側の蓋と、シリンダの内部を移動する金属製のピストンとから構成されている圧着装置を開示している。この圧着装置では、ピストンが移動することにより、シリンダ内の密閉空間の容積が縮小される。基台にはインターポーザが絶縁性接着フィルムによりシリコンウエハに仮接続されて載置され、シート部材が仮接続されたシリコンウエハを覆っている。また、基台には加熱ヒータが埋め込まれている。そして、シリンダ内に加圧された圧縮ガスを導入し、仮接続されたシリコンウエハをシート部材を介して全面的に加圧し、加熱ヒータを通電し、絶縁性接着フィルムを溶融させシリコンウエハの各電極とインターポーザの各電極を電気的に接続しＣＳＰ接続体を製造している。 For example, in Patent Document 1, as a crimping device for manufacturing a CSP at the wafer level, a cylindrical cylinder, a base provided to seal one side thereof, a lid on the other side of the cylinder, and the inside of the cylinder The pressure bonding apparatus comprised from the metal piston which moves is disclosed. In this crimping apparatus, the volume of the sealed space in the cylinder is reduced by moving the piston. An interposer is placed on the base by being temporarily connected to the silicon wafer with an insulating adhesive film, and a sheet member covers the temporarily connected silicon wafer. A heater is embedded in the base. Then, a pressurized compressed gas is introduced into the cylinder, the temporarily connected silicon wafer is fully pressurized through the sheet member, the heater is energized, the insulating adhesive film is melted, and each silicon wafer is melted. The electrode and each electrode of the interposer are electrically connected to produce a CSP connection body.
特開２０００－１９５９０３号公報JP 2000-195903 A
　このような装置では、加圧された圧縮ガスを用いて非接触状態で仮接続体に圧力を加えるのでシリコンウエハおよびインターポーザに対して大きな圧力を均一に加えられる。一方、シート部材で覆われた仮接続されたシリコンウエハには、図１１に示すように上面および側面から圧力Ｆが加えられている。そのため、接着剤４が加熱され軟化していく過程で上面と側面に作用する力のバランスを失い、シリコンウエハ２の各電極とチップ３（例えばインターポーザ）の各電極の間で実装ズレが発生するおそれがある。 In such an apparatus, since pressure is applied to the temporary connection body in a non-contact state using a pressurized compressed gas, a large pressure can be uniformly applied to the silicon wafer and the interposer. On the other hand, pressure F is applied to the temporarily connected silicon wafer covered with the sheet member from the upper surface and side surfaces as shown in FIG. For this reason, the balance of the force acting on the upper surface and the side surface is lost in the process in which the adhesive 4 is heated and softened, and mounting displacement occurs between each electrode of the silicon wafer 2 and each electrode of the chip 3 (for example, interposer). There is a fear.
　そこで、基板に接着剤を介して仮圧着された複数のチップを実装ズレを発生させること無く基板に一括圧着することが可能な圧着装置および圧着方法を提供することを課題とする。 Therefore, it is an object of the present invention to provide a crimping apparatus and a crimping method capable of collectively crimping a plurality of chips temporarily bonded to a substrate via an adhesive without causing mounting displacement.
　上記課題を解決するために、請求項１に記載の発明は、
基板上に複数のチップを位置合わせした後、樹脂を介して仮圧着したチップを、一括圧着する圧着装置であって、
チップが圧着される基板の裏面を吸着保持する基板ステージと、
前記仮圧着したチップの表面を覆う弾性シートと、
前記基板ステージの外周に位置し、前記弾性シートを保持するシート保持手段と、
前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧する減圧手段と、
弾性シートを介して基板上のチップに所定の加圧力を付与するボンディングヘッドと、を備えている圧着装置である。 In order to solve the above-mentioned problem, the invention described in claim 1
After aligning a plurality of chips on a substrate, a crimping device that collectively crimps a chip temporarily bonded via a resin,
A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped;
An elastic sheet covering the surface of the temporarily crimped chip;
A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage;
Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
And a bonding head that applies a predetermined pressure to a chip on a substrate via an elastic sheet.
　請求項２に記載の発明は、請求項１に記載の発明において、
前記弾性シートを枚葉で供給するシート供給手段を備えた圧着装置である。 The invention according to claim 2 is the invention according to claim 1,
It is a pressure bonding apparatus provided with a sheet supply means for supplying the elastic sheet as a single sheet.
　請求項３に記載の発明は、請求項１または２に記載の発明において、
前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間に不活性ガスを供給するガス供給手段を備えた圧着装置である。 The invention according to claim 3 is the invention according to claim 1 or 2,
The pressure bonding apparatus includes a gas supply unit that supplies an inert gas to a sealed space formed by the sheet holding unit, the elastic sheet, and the substrate stage.
　請求項４に記載の発明は、請求項１から３のいずれかに記載の発明において、
前記ボンディングヘッドと前記基板ステージとに加熱および冷却手段を備えた圧着装置である。 The invention according to claim 4 is the invention according to any one of claims 1 to 3,
The pressure bonding apparatus includes heating and cooling means for the bonding head and the substrate stage.
　請求項５に記載の発明は、請求項１から４のいずれかに記載の発明において、
前記ボンディングヘッドの加圧面が前記基板ステージに対して平行な状態を維持しながら下降させる機能を有することを特徴とする圧着装置である。 The invention according to claim 5 is the invention according to any one of claims 1 to 4,
The pressure bonding apparatus has a function of lowering the pressure surface of the bonding head while maintaining a state parallel to the substrate stage.
　請求項６に記載の発明は、
基板上に複数のチップを位置合わせした後、樹脂を介して仮圧着したチップを、一括圧着する圧着方法であって、
チップが圧着される基板の裏面を吸着保持する基板ステージと、
前記仮圧着したチップの表面を覆う弾性シートと、
前記基板ステージの外周に位置し、前記弾性シートを保持するシート保持手段と、
前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧する減圧手段と、
弾性シートを介して基板上のチップに所定の加圧力を付与するボンディングヘッドと、を備え、
チップが仮圧着された基板を基板ステージに載置する工程と、
弾性シートを仮圧着したチップの表面に覆い、弾性シートを保持する工程と、
前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧下にする工程と、
ボンディングヘッドを所定の高さまで下降させ、弾性シートを介して基板上のチップに所定の加圧力を所定時間付与する工程と、を有する圧着方法である。 The invention described in claim 6
After aligning a plurality of chips on a substrate, a chip that is temporarily press-bonded via a resin is a pressure-bonding method that collectively press-bonds,
A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped;
An elastic sheet covering the surface of the temporarily crimped chip;
A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage;
Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
A bonding head that applies a predetermined pressing force to the chip on the substrate via the elastic sheet,
A step of placing the substrate on which the chip is temporarily pressure-bonded on the substrate stage;
Covering the surface of the chip temporarily bonded with the elastic sheet, and holding the elastic sheet;
A step of reducing the pressure of the sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
And a step of lowering the bonding head to a predetermined height and applying a predetermined pressure to the chip on the substrate through the elastic sheet for a predetermined time.
　請求項７に記載の発明は、請求項６に記載の発明において、
弾性シートを枚葉で供給し、一括圧着の動作毎に弾性シートを交換する工程を有する圧着方法である。 The invention according to claim 7 is the invention according to claim 6,
This is a pressure-bonding method including a step of supplying an elastic sheet as a single sheet and replacing the elastic sheet for each batch pressure bonding operation.
　請求項８に記載の発明は、請求項６または７に記載の発明において、
前記弾性シートに、耐熱温度３５０℃以上、熱収縮率が３５０℃で０．１％以下、および熱伝導率が１Ｗ／ｍ・Ｋ以上という特性を備えた材料を用いることを特徴とする圧着方法である。 The invention according to claim 8 is the invention according to claim 6 or 7,
A method for pressure bonding, characterized in that a material having a heat resistant temperature of 350 ° C. or higher, a thermal shrinkage rate of 350 ° C. of 0.1% or lower, and a thermal conductivity of 1 W / m · K or higher is used for the elastic sheet. It is.
　請求項９に記載の発明は、請求項６から８のいずれかに記載の発明において、
弾性シートを介して基板上のチップに所定の加圧力を所定時間付与する工程において、ボンディングヘッドと基板ステージに備えられた加熱および冷却手段を動作させる工程を含む圧着方法である。 The invention according to claim 9 is the invention according to any one of claims 6 to 8,
In the step of applying a predetermined pressing force to the chip on the substrate through the elastic sheet for a predetermined time, the method includes a step of operating heating and cooling means provided in the bonding head and the substrate stage.
　請求項１０に記載の発明は、請求項６から９のいずれかに記載の発明において、
前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を不活性ガス雰囲気にする工程を含む圧着方法である。 The invention according to claim 10 is the invention according to any one of claims 6 to 9,
The pressure-bonding method includes a step of bringing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage into an inert gas atmosphere.
　請求項１１に記載の発明は、請求項６から１０のいずれかに記載の発明において、前記ボンディングヘッドの加圧面が前記基板ステージに対して平行な状態を維持しながら下降させることを特徴とする圧着方法である。 According to an eleventh aspect of the present invention, in the invention according to any one of the sixth to tenth aspects, the pressure surface of the bonding head is lowered while maintaining a state parallel to the substrate stage. This is a crimping method.
　本発明の圧着装置および圧着方法によれば、ボンディングヘッドが弾性シートを介して所定の加圧力でチップを押しつけているので、接着剤が溶融する際にチップと基板が位置ずれすること無く圧着されるようになる。また、局所的に密閉空間を形成し、減圧下に置換することができるので、大がかりなチャンバ-構造を必要とすること無く、簡易的な構造でバンプの酸化を防止しながら一括圧着することができる。 According to the crimping apparatus and the crimping method of the present invention, since the bonding head presses the chip with a predetermined pressure through the elastic sheet, the chip and the substrate are crimped without being displaced when the adhesive melts. Become so. In addition, since a sealed space can be locally formed and replaced under reduced pressure, it is possible to perform pressure bonding at a time while preventing bump oxidation with a simple structure without requiring a large chamber structure. it can.
　また接着剤が加熱硬化する際に発生するアウトガスによるボイドも減圧下でボンディングすることで、ボイドを抑制しながら一括圧着することが出来る。 Also, voids due to outgas generated when the adhesive is cured by heating can be bonded together while suppressing voids by bonding under reduced pressure.
　また、弾性シートを介して圧着しているので、仮圧着されたチップに高さバラツキがあっても、実装ズレを発生させること無く基板に一括圧着することができる。 In addition, since the pressure bonding is performed through the elastic sheet, even if there is a variation in the height of the temporarily bonded chip, it is possible to perform the pressure bonding to the substrate without causing any mounting displacement.
　また、弾性シートを局所的に形成したチャンバ-の上蓋と兼用することで、接着剤により仮圧着されたチップを一括圧着する際に、チップの周辺からはみ出した接着剤がボンディングヘッド側に付着することを防止できる。また、ボンディングヘッドと基板ステージからの上下加熱、冷却により接着剤の硬化とバンプ接合を一括で行うことが出来る。さらに、弾性シートを枚葉で供給することで、高速でウェハの交換を容易にし連続的に圧着を行うことが出来る。 In addition, by using the upper cover of the chamber with the locally formed elastic sheet, the adhesive that protrudes from the periphery of the chip adheres to the bonding head side when the chips temporarily bonded with the adhesive are collectively bonded. Can be prevented. Further, the adhesive can be cured and the bumps can be bonded together by heating and cooling from the bonding head and the substrate stage. Further, by supplying the elastic sheet as a single sheet, the wafer can be easily replaced at a high speed, and the crimping can be continuously performed.
本発明の実施の形態の圧着装置の概略側面図である。1 is a schematic side view of a crimping apparatus according to an embodiment of the present invention. 本発明の実施の形態の門型フレームの垂直柱部の配置を説明する上面図である。It is a top view explaining arrangement | positioning of the vertical column part of the portal frame of embodiment of this invention. シートを引きだしチップ上面に配置した状態を示す側面図である。It is a side view which shows the state which pulled out the sheet | seat and has arrange | positioned on the chip | tip upper surface. シートを切断し吸着保持した状態を示す側面図である。It is a side view which shows the state which cut | disconnected and adsorbed and hold | maintained the sheet | seat. ボンディングヘッドが下降した状態を示す側面図である。It is a side view which shows the state which the bonding head fell. シートで囲まれた空間を減圧した状態を示す側面図である。It is a side view which shows the state which pressure-reduced the space enclosed with the sheet | seat. 圧着装置の動作フローチャートである。It is an operation | movement flowchart of a crimping | compression-bonding apparatus. 基板ステージ上にウエハの代わりにロードセルを配置した状態の上面図である。It is a top view of the state which has arrange | positioned the load cell instead of the wafer on the substrate stage. 門型フレームの垂直柱部の高さをモニタリング装置の校正を説明する図である。It is a figure explaining calibration of a monitoring device about the height of the vertical pillar part of a portal frame. 門型フレームの垂直柱部の高さをモニタリング装置の校正を説明する図である。It is a figure explaining calibration of a monitoring device about the height of the vertical pillar part of a portal frame. 従来の圧着装置の問題点を説明する概略側面図である。It is a schematic side view explaining the problem of the conventional crimping | compression-bonding apparatus.
　本発明の実施の形態について図面を参照して説明する。図１は本発明の実施の形態の圧着装置の側面図である。図１において、圧着装置１に向かって左右方向をＸ軸、前後方向をＹ軸、Ｘ軸とＹ軸で構成されるＸＹ平面に直交する軸をＺ軸（上下方向）、Ｚ軸周りをθ軸とする。 Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a side view of a crimping apparatus according to an embodiment of the present invention. In FIG. 1, toward the crimping apparatus 1, the left-right direction is the X axis, the front-rear direction is the Y axis, the axis perpendicular to the XY plane composed of the X axis and the Y axis is the Z axis (vertical direction), Axis.
　圧着装置１は、チップ３が接着剤４を介して仮圧着されたウエハ２を本圧着する加圧手段２０と、ウエハ２を保持する基板ステージ４０と、本圧着時にチップ３を覆うシート５を供給するシート供給手段５０と、シート５を基板ステージ４の外周で保持するシート保持手段６０と、ウエハ２上に不活性ガスを供給するガス供給手段７０と、から構成されている。本実施の形態で説明するウエハ２には、予めチップ３がウエハ２上の所定位置に位置合わせされ、接着剤を用いて接合されているものとする（以降、チップ３がウエハ２に仮圧着されていると表記する）。 The crimping apparatus 1 includes a pressurizing unit 20 that performs final pressure bonding of the wafer 2 on which the chip 3 is temporarily bonded via the adhesive 4, a substrate stage 40 that holds the wafer 2, and a sheet 5 that covers the chip 3 during the final pressure bonding. The sheet supply means 50 to supply, the sheet holding means 60 to hold the sheet 5 on the outer periphery of the substrate stage 4, and the gas supply means 70 to supply an inert gas onto the wafer 2 are configured. In the wafer 2 described in the present embodiment, it is assumed that the chip 3 is previously aligned at a predetermined position on the wafer 2 and bonded using an adhesive (hereinafter, the chip 3 is temporarily bonded to the wafer 2). Notation).
　加圧手段２０は、門型フレーム２１と、門型フレーム２１の水平梁部２１ａに設けられたボンディングヘッド支持部２２と、円筒形のボンディングヘッド２３とから構成されている。門型フレーム２１の垂直柱部２１ｂは、剛性の高いガイド構造となっていて、剛性ガイド２１ｃで支持されている。垂直柱部２１ｂは上下の伸縮可能になっており、図示しない上下駆動手段と連結されている。上下駆動手段による垂直柱部２１ｂの昇降動作により、ボンディングヘッド２３がＺ方向（上下方向）に移動可能になっている。剛性ガイド２１ｃは、基台６に立設している。 The pressurizing means 20 includes a portal frame 21, a bonding head support portion 22 provided on a horizontal beam portion 21 a of the portal frame 21, and a cylindrical bonding head 23. The vertical column portion 21b of the portal frame 21 has a highly rigid guide structure and is supported by the rigid guide 21c. The vertical column portion 21b can be vertically expanded and contracted, and is connected to a vertical driving means (not shown). The bonding head 23 can be moved in the Z direction (up and down direction) by the vertical movement of the vertical column portion 21b by the vertical driving means. The rigid guide 21 c is erected on the base 6.
　なお、本実施の形態において、門型フレーム２１は４本の垂直柱部２１ｂと、それぞれの垂直柱部２１ｂを支持する４本の剛性ガイド２１ｃを備えている。その配置を上面から見たＸＹ平面で示したのが図２であり、４本の垂直柱部２１ｂ（２１ｂ１、２１ｂ２、２１ｂ３、２１ｂ４）と、それぞれを支持する４本の剛性ガイド２１ｃ（２１ｃ１、２１ｃ２、２１ｃ３、２１ｃ４）が配置されている。この、４本の垂直柱部２１ｂの高さ調整を行うことにより、門型フレーム２１の水平梁部２１ａの、基板ステージ４０に対する、平行度が確保される。 In the present embodiment, the portal frame 21 includes four vertical column portions 21b and four rigid guides 21c that support the respective vertical column portions 21b. FIG. 2 shows the arrangement in an XY plane when viewed from the top, and four vertical pillars 21b (21b1, 21b2, 21b3, 21b4) and four rigid guides 21c (21c1, 21c2, 21c3, 21c4) are arranged. By adjusting the height of the four vertical column portions 21b, the parallelism of the horizontal beam portion 21a of the portal frame 21 with respect to the substrate stage 40 is ensured.
　ボンディングヘッド２３は、チップ３が実装されたウエハ２のチップ側から加熱するヒータ４３および加熱されたボンディングヘッド２３を冷却する冷却部４５を備えている。 The bonding head 23 includes a heater 43 that heats from the chip side of the wafer 2 on which the chip 3 is mounted, and a cooling unit 45 that cools the heated bonding head 23.
　基板ステージ４０は、ウエハ２の裏面２ｂを吸着保持する吸引孔４１と、ウエハ２を加熱するヒータ４２と、加熱された基板ステージ４０を冷却する冷却部４４とを備えている。吸引孔４１は、図示していない吸引パイプを介して吸引ポンプと接続されている。 The substrate stage 40 includes a suction hole 41 that holds the back surface 2 b of the wafer 2 by suction, a heater 42 that heats the wafer 2, and a cooling unit 44 that cools the heated substrate stage 40. The suction hole 41 is connected to a suction pump through a suction pipe (not shown).
　ウエハ２の固定手段は、機械的に基板ステージ４０にクランプする方式や静電チャック方式など強固に固定されるものであれば吸引孔４１を用いた吸着方式でなくてもよい。 The fixing means for the wafer 2 may not be an adsorption method using the suction holes 41 as long as it is firmly fixed to the substrate stage 40, such as a mechanical clamping method or an electrostatic chuck method.
　基板ステージ４０の外周にはシート保持手段６０が設けられている。シート保持手段６０は、内壁６１と外壁６２を基板ステージ４０の外周に沿って立設し、内壁６１と外壁６２に挟まれた空間である吸引スペース６３でシート保持手段６０の上部に載せられたシート５を吸引する構成となっている。内壁６１と外壁６２は、基板ステージ４０にチップ３の仮圧着すみウエハ２が載置された高さより高い位置まで伸びている。 A sheet holding means 60 is provided on the outer periphery of the substrate stage 40. The sheet holding means 60 has an inner wall 61 and an outer wall 62 erected along the outer periphery of the substrate stage 40, and is placed on the upper part of the sheet holding means 60 by a suction space 63 that is a space sandwiched between the inner wall 61 and the outer wall 62. The sheet 5 is sucked. The inner wall 61 and the outer wall 62 extend to a position higher than the height at which the temporary crimped corner wafer 2 of the chip 3 is placed on the substrate stage 40.
　シート保持手段６０は、機械的に内壁６１に強固にクランプする方法であれば、吸引スペース６３を用いた吸着方式で無くても良い。例えばボンディングヘッド２３と内壁６１とで挟み込んでクランプする方式であれば、ボンディングヘッド２３の下降と同時にクランプ出来るので機構が簡略化される。 The sheet holding means 60 may not be a suction method using the suction space 63 as long as the sheet holding means 60 is mechanically clamped to the inner wall 61. For example, if the system is clamped by being sandwiched between the bonding head 23 and the inner wall 61, the mechanism can be simplified since the bonding head 23 can be clamped at the same time.
　内壁６１と基板ステージ４０との間には減圧手段８０が設けられている。減圧手段８０は減圧口８１が設けられ、真空ポンプによりシート保持手段６０と弾性シート５と基板ステージ４０とにより形成された密閉空間を真空吸引する事で減圧出来るようになっている。 A decompression means 80 is provided between the inner wall 61 and the substrate stage 40. The decompression means 80 is provided with a decompression port 81 and can be decompressed by vacuum suction of a sealed space formed by the sheet holding means 60, the elastic sheet 5 and the substrate stage 40 by a vacuum pump.
　さらに内壁６１と基板ステージ４０との間にはガス供給手段７０が設けられている。ガス供給手段７０は供給口７１が設けられ、供給口７１から不活性ガスである窒素（Ｎ２）が供給されるようになっている。図中、シート保持手段６０とガス供給手段７０、減圧手段８０は、斜線で示した。 Further, a gas supply means 70 is provided between the inner wall 61 and the substrate stage 40. The gas supply means 70 is provided with a supply port 71, and nitrogen (N 2) that is an inert gas is supplied from the supply port 71. In the drawing, the sheet holding means 60, the gas supply means 70, and the decompression means 80 are indicated by oblique lines.
　シート供給手段５０は、ロール状のシート５を供給するシート巻き出し部５１と、シート巻き出し部５１から巻き出されたシート５を把持するシート把持部５３と、シート５を引き出すシート引き出し部５２と、引き出されたシート５を切断するシート切断部５４とから構成されている。シート巻き出し部５１は、門型フレーム２１の側部に配置されている。シート引き出し部５２は、門型フレーム２１の内部をシート５を把持しながらＸ方向（水平方向）に移動し、チップ３が仮圧着すみのウエハ２の上部にシート５を覆うようなっている。シート切断部５４は、シート把持部５３とシート引き出し部５２との間に位置し、引き出されたシート５をシート把持部５３とシート引き出し部５２とで把持した状態で切断するようになっている。シート引き出し部５２とシート把持部５３は、シート５を把持した状態で、Ｚ方向（上下方向）に移動可能に構成されている。 The sheet supply unit 50 includes a sheet unwinding unit 51 for supplying the roll-shaped sheet 5, a sheet gripping unit 53 for gripping the sheet 5 unwound from the sheet unwinding unit 51, and a sheet pulling unit 52 for pulling out the sheet 5. And a sheet cutting part 54 for cutting the drawn sheet 5. The sheet unwinding portion 51 is disposed on the side portion of the portal frame 21. The sheet drawing portion 52 moves in the X direction (horizontal direction) while gripping the sheet 5 inside the portal frame 21, and covers the sheet 5 on the upper portion of the wafer 2 where the chip 3 is temporarily crimped. The sheet cutting part 54 is located between the sheet gripping part 53 and the sheet pulling part 52 and cuts the drawn sheet 5 while being gripped by the sheet gripping part 53 and the sheet pulling part 52. . The sheet drawer 52 and the sheet gripper 53 are configured to be movable in the Z direction (vertical direction) while gripping the sheet 5.
　なお、シート５の材質としてフッ素係樹脂が一般的であるが、本実施形態のような一括圧着用途において、フッ素係樹脂の耐熱温度、熱収縮率、熱伝導率は充分な特性とは言えない。すなわち、一括圧着用途ではヒータ４３の温度が最高３５０℃に達する場合があるので耐熱性が不足し、熱収縮によりシワが発生して実装ズレとなる可能性があり、熱伝導率が低いためにチップを所定温度に加熱するためのヒータ４３の設定温度が高くなるという問題がある。このため、シート５に要求される特性として、耐熱温度が３５０℃以上（フッ素系樹脂は２６０℃程度）、熱収縮率が３５０℃で０．１％以下（フッ素係樹脂は２６０℃で２％前後）、熱伝導率が１Ｗ／ｍ・Ｋ以上（フッ素係樹脂は０．３Ｗ／ｍ・Ｋ）を備えていることが望ましい。 In addition, although fluorine resin is generally used as the material of the sheet 5, the heat resistance temperature, heat shrinkage rate, and heat conductivity of the fluorine resin are not sufficient characteristics in the batch crimping application as in this embodiment. . That is, in the case of batch crimping, the temperature of the heater 43 may reach a maximum of 350 ° C., so heat resistance is insufficient, wrinkles may occur due to heat shrinkage, and mounting displacement may occur, and the thermal conductivity is low. There is a problem that the set temperature of the heater 43 for heating the chip to a predetermined temperature increases. For this reason, the required characteristics of the sheet 5 include a heat-resistant temperature of 350 ° C. or higher (fluorine-based resin is about 260 ° C.) and a heat shrinkage of 0.1% or less at 350 ° C. It is desirable that the thermal conductivity is 1 W / m · K or more (or 0.3 W / m · K for fluorine-based resin).
　このような、圧着装置１を用いてチップ３をウエハ２に本圧着する圧着方法について、図３～図６の圧着装置１の側面図と、図７のフローチャートを用いて説明する。 Such a crimping method for crimping the chip 3 to the wafer 2 using the crimping device 1 will be described with reference to the side view of the crimping device 1 in FIGS. 3 to 6 and the flowchart in FIG.
　まず、ボンディングヘッド２３が上昇した状態で、チップ３が仮圧着されたウエハ２を基板ステージ４０に載置した状態から説明を開始する（ステップＳＰ０１）。 First, the description starts from a state in which the wafer 2 to which the chip 3 is temporarily bonded is placed on the substrate stage 40 with the bonding head 23 raised (step SP01).
　次に、図３に示すように、シート巻き出し部５１からシート５を引き出す。シート５の引き出しには、シート引き出し部５２が用いられる。シート引き出し部５２は、シート５を把持して、シート保持手段６０をまたぐようにＸ方向（水平方向）に移動する。シート引き出し部５２がＸ方向に移動することにより、チップ３が仮圧着されているウエハ２の上面側が、シート５で覆われるようになる。また、シート５はボンディングヘッド２３とウエハ２の間を通るように引き出される。シート把持部５３と、シート引き出し部５２がシートを把持した状態で、下降しチップ３の上面にシート５をセットする（ステップＳＰ０２）。 Next, as shown in FIG. 3, the sheet 5 is pulled out from the sheet unwinding portion 51. For pulling out the sheet 5, a sheet pulling portion 52 is used. The sheet drawer 52 grips the sheet 5 and moves in the X direction (horizontal direction) so as to straddle the sheet holding means 60. As the sheet drawing portion 52 moves in the X direction, the upper surface side of the wafer 2 to which the chips 3 are temporarily bonded is covered with the sheet 5. The sheet 5 is pulled out so as to pass between the bonding head 23 and the wafer 2. With the sheet gripping portion 53 and the sheet drawing portion 52 gripping the sheet, the sheet 5 is lowered and the sheet 5 is set on the upper surface of the chip 3 (step SP02).
　次に、シート切断部５４がシート５を切断し、シート引き出し部５２は元いた位置（待機位置）に戻る（図４）。シート保持手段６０の吸引スペース６３に接続されている図示していない吸引ポンプが作動し、シート５を吸引する（ステップＳＰ０３）。このように、シート５を枚葉で供給することで、高速でウェハの交換を容易にし連続的に圧着を行うことが出来る。 Next, the sheet cutting unit 54 cuts the sheet 5, and the sheet drawing unit 52 returns to the original position (standby position) (FIG. 4). A suction pump (not shown) connected to the suction space 63 of the sheet holding means 60 operates to suck the sheet 5 (step SP03). Thus, by supplying the sheet 5 as a single sheet, it is possible to easily replace the wafer at a high speed and continuously perform the pressure bonding.
　次に、ボンディングヘッド２３及び基板ステージ４０に設けられているヒータ４２，４３を昇温しない状態で、図５に示すように、ボンディングヘッド２３が下降しシート５を介してチップ２をウエハ３に加圧する。ボンディングヘッド２３の下降に際しては、図示していない昇降手段により、図２に示す４本の垂直柱部２１ｂ（２１ｂ１、２１ｂ２、２１ｂ３、２１ｂ４）の高さが常に均一になるようにモニタリングしながら行い、ボンディングヘッド２３の加圧面に傾きが生じないように制御する。具体的には、４本の垂直柱部２１ｂの最大値と最小値が所定の偏差以内（例えば、ウエハサイズが３００ｍｍの場合は３μｍ）になるように制御を行い、ボンディングヘッド２３の加圧面がチップ２に接触した後は、ウェハ２上に搭載された全てのチップ３に所定の荷重がかかるように加圧する（ステップＳＰ０４）。このように平行状態を維持しながら加圧を行うことにより、後のステップで加熱して加圧を行う際、接着剤が軟化する際にも水平分力が生じず、水平分力に起因した実装ズレが防げる。 Next, in a state where the heaters 42 and 43 provided on the bonding head 23 and the substrate stage 40 are not heated, the bonding head 23 is lowered and the chip 2 is attached to the wafer 3 via the sheet 5 as shown in FIG. Pressurize. When the bonding head 23 is lowered, the height of the four vertical pillar portions 21b (21b1, 21b2, 21b3, 21b4) shown in FIG. Then, control is performed so that the pressure surface of the bonding head 23 is not inclined. Specifically, control is performed so that the maximum value and the minimum value of the four vertical columnar portions 21b are within a predetermined deviation (for example, 3 μm when the wafer size is 300 mm), and the pressure surface of the bonding head 23 is controlled. After contacting the chip 2, pressure is applied so that a predetermined load is applied to all the chips 3 mounted on the wafer 2 (step SP04). By applying pressure while maintaining the parallel state in this way, when heating and pressurizing in a later step, horizontal component force does not occur even when the adhesive softens, resulting from the horizontal component force. Mounting misalignment can be prevented.
　次に、図６のように、シート５と基板ステージ４０とシート保持手段６０の内壁６１で囲まれた空間の空気を減圧手段８０で吸引することで真空状態にする（ステップＳＰ０５）。 Next, as shown in FIG. 6, the air in the space surrounded by the sheet 5, the substrate stage 40, and the inner wall 61 of the sheet holding means 60 is sucked by the decompression means 80 to make a vacuum (step SP05).
　次に、ボンディングヘッド２３及び基板ステージ４０に設けられているヒータ４２，４３が昇温され接着剤４の加熱硬化が開始される（ステップＳＰ０６）。このときのチップ３のバンプとウエハ２の回路面に形成された電極との接続も同時に行われる。このように、ボンディングヘッド２３がシート５を介して所定の加圧力でチップ２を押しつけているので、接着剤が溶融する際にチップ２と基板３が位置ずれすること無く圧着されるようになる。また減圧下で行うため、接着剤が加熱硬化する際に発生するアウトガスによるボイドが抑制され品質の良い接合状態となる。 Next, the heaters 42 and 43 provided in the bonding head 23 and the substrate stage 40 are heated to start the heat curing of the adhesive 4 (step SP06). At this time, the bumps of the chip 3 and the electrodes formed on the circuit surface of the wafer 2 are simultaneously connected. Thus, since the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. . Moreover, since it carries out under reduced pressure, the void by the outgas which generate | occur | produces when an adhesive heat-hardens is suppressed, and it will be in a joining state with sufficient quality.
　バンプや電極が酸化されやすい材質（例えば銅など）の場合には、真空吸引の後にガス供給手段７０の供給口７１から不活性ガスを供給してシート５と基板ステージ４０とシート保持手段６０の内壁６１で囲まれた空間を不活性ガスと置換する。チップ２が仮圧着されたウエハ２の周辺全体が不活性ガス雰囲気となり、チップ２の電極の酸化が防止される（ステップＳＰ０７）。 In the case where the bumps and the electrodes are easily oxidized (for example, copper), an inert gas is supplied from the supply port 71 of the gas supply unit 70 after vacuum suction, so that the sheet 5, the substrate stage 40, and the sheet holding unit 60 The space surrounded by the inner wall 61 is replaced with an inert gas. The entire periphery of the wafer 2 to which the chip 2 is temporarily press-bonded becomes an inert gas atmosphere, and oxidation of the electrode of the chip 2 is prevented (step SP07).
　このように、ボンディングヘッド２３がシート５を介して所定の加圧力でチップ２を押しつけているので、接着剤が溶融する際にチップ２と基板３が位置ずれすること無く圧着されるようになる。 Thus, since the bonding head 23 presses the chip 2 with a predetermined pressure through the sheet 5, the chip 2 and the substrate 3 are pressure-bonded without being displaced when the adhesive melts. .
　加圧力及び加熱温度は圧着されるチップ数や、バンプ数および接着剤の硬化反応やバンプの溶融温度に応じて、それぞれ任意のタイミングで多段階で制御できるようになっている。 The pressure and heating temperature can be controlled in multiple stages at arbitrary timings according to the number of chips to be crimped, the number of bumps, the curing reaction of the adhesive, and the melting temperature of the bumps.
　次に、所定時間の加圧と加熱が行われた後、ボンディングヘッド２３が上昇し本圧着が完了する（ステップＳＰ０８）。 Next, after pressurization and heating for a predetermined time, the bonding head 23 is raised and the main press bonding is completed (step SP08).
　また、以上のステップＳＰ０１～ＳＰ０８とは別に、門型フレーム２１は４本の垂直柱部２１ｂ（２１ｂ１、２１ｂ２、２１ｂ３、２１ｂ４）の高さモニタリングを行う際の誤差を低減するために、所定の周期で高さモニタリング機能の校正を行う必要がある。具体例としては、図８に示すようにウエハの代わりに同仕様の４つのロードセル９１、９２、９３、９４を配置した基板ステージ４０に、図９、図１０に示すようにボンディグヘッド２３を接近させ、両面が平行状態で最接近した段階ででゼロ点設定を行う方法がある。すなわち、両面がロードセルを介して平行状態で密着したか否かを、４つのロードセルそれぞれが検知する加圧力の最大値と最小値が所定の偏差以内で平衡状態にあるかどうかで判断する。 In addition to the above steps SP01 to SP08, the portal frame 21 has a predetermined length in order to reduce an error when performing the height monitoring of the four vertical pillars 21b (21b1, 21b2, 21b3, 21b4). It is necessary to calibrate the height monitoring function at intervals. As a specific example, as shown in FIG. 8, a bonding head 23 as shown in FIGS. 9 and 10 is placed on a substrate stage 40 in which four load cells 91, 92, 93, 94 having the same specifications are arranged instead of a wafer. There is a method in which the zero point is set when the two surfaces are close to each other and are closest to each other in a parallel state. That is, whether or not both surfaces are in close contact with each other in parallel via the load cell is determined by whether the maximum value and the minimum value of the applied pressure detected by each of the four load cells are in an equilibrium state within a predetermined deviation.
　なお、本実施の形態においては、ロードセルを高さモニタリング機能の校正を行う時に、基板ステージ４１上に配置したが、基板ステージ４１とヒータ４２の間に常設しておいても良い。また、門型フレーム２１の垂直柱部２１ｂおよびそれぞれみら垂直柱部２１ｂを支持する剛性ガイド２１ｃが４本の場合としたが、４本に限定されるものではなく、３本あるいは５本以上であっても良い。 In this embodiment, the load cell is arranged on the substrate stage 41 when the height monitoring function is calibrated. However, the load cell may be permanently installed between the substrate stage 41 and the heater 42. In addition, although there are four rigid guides 21c for supporting the vertical column portion 21b of the portal frame 21 and the respective mirror vertical column portions 21b, the number is not limited to four, but three or five or more. It may be.
　１　　実装装置
　２　　ウエハ
　３　　チップ
　４　　接着剤
　５　　シート
　６　　基台
　２０　　加圧手段
　２１　　門型フレーム
　２１ａ　　門型フレーム２１の水平梁部
　２１ｂ　　門型フレーム２１の垂直柱部
　２１ｃ　　剛性シリンダ
　２２　　ボンディングヘッド支持部
　２３　　ボンディングヘッド
　４０　　基板ステージ
　４１　　吸引孔
　４２　　ヒータ
　４３　　ヒータ
　４４　　冷却部
　４５　　冷却部
　５０　　シート供給手段
　５１　　シート巻き出し部
　５２　　シート引き出し部
　５３　　シート把持部
　５４　　シート切断部
　６０　　シート保持手段
　６１　　内壁
　６２　　外壁
　６３　　吸引スペース
　７０　　ガス供給手段
　７１　　供給口
　８０　　減圧手段
　８１　　減圧口
　９１　　ロードセル
　９２　　ロードセル
　９３　　ロードセル
　９４　　ロードセル DESCRIPTION OF SYMBOLS 1 Mounting apparatus 2 Wafer 3 Chip 4 Adhesive 5 Sheet 6 Base 20 Pressing means 21 Portal frame 21a Horizontal beam part 21b Portal frame 21 Vertical column part 21c Vertical column part 21c Rigid cylinder 22 Bonding head support part 23 Bonding head 40 Substrate stage 41 Suction hole 42 Heater 43 Heater 44 Cooling part 45 Cooling part 50 Sheet supply means 51 Sheet unwinding part 52 Sheet pulling part 53 Sheet gripping part 54 Sheet cutting part 60 Sheet holding means 61 Inner wall 62 Outer wall 63 Suction space 70 Gas supply means 71 Supply port 80 Pressure reducing means 81 Pressure reducing port 91 Load cell 92 Load cell 93 Load cell 94 Load cell

Claims (11)

  1. 基板上に複数のチップを位置合わせした後、樹脂を介して仮圧着したチップを、一括圧着する圧着装置であって、
    チップが圧着される基板の裏面を吸着保持する基板ステージと、
    前記仮圧着したチップの表面を覆う弾性シートと、
    前記基板ステージの外周に位置し、前記弾性シートを保持するシート保持手段と、
    前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧する減圧手段と、
    弾性シートを介して基板上のチップに所定の加圧力を付与するボンディングヘッドと、を備えている圧着装置。     After aligning a plurality of chips on a substrate, a crimping device that collectively crimps a chip temporarily bonded via a resin,
    A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped;
    An elastic sheet covering the surface of the temporarily crimped chip;
    A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage;
    Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
    And a bonding head that applies a predetermined pressure to the chip on the substrate via the elastic sheet.
  2. 請求項１に記載の発明において、
    前記弾性シートを枚葉で供給するシート供給手段を備えた圧着装置。     In the invention of claim 1,
    A pressure-bonding device comprising sheet supply means for supplying the elastic sheet as a single sheet.
  3. 請求項１または２に記載の発明において、
    前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間に不活性ガスを供給するガス供給手段を備えた圧着装置。     In the invention according to claim 1 or 2,
    A pressure bonding apparatus including a gas supply unit that supplies an inert gas to a sealed space formed by the sheet holding unit, the elastic sheet, and the substrate stage.
  4. 請求項１から３のいずれかに記載の発明において、
    前記ボンディングヘッドと前記基板ステージとに加熱および冷却手段を備えた圧着装置。     In the invention according to any one of claims 1 to 3,
    A pressure bonding apparatus provided with heating and cooling means for the bonding head and the substrate stage.
  5. 請求項１から４のいずれかに記載の発明において、前記ボンディングヘッドの加圧面が前記基板ステージに対して平行な状態を維持しながら下降させる機能を有することを特徴とする圧着装置。 5. The pressure bonding apparatus according to claim 1, wherein the pressure bonding surface of the bonding head has a function of being lowered while maintaining a state parallel to the substrate stage. 6.
  6. 基板上に複数のチップを位置合わせした後、樹脂を介して仮圧着したチップを、一括圧着する圧着方法であって、
    チップが圧着される基板の裏面を吸着保持する基板ステージと、
    前記仮圧着したチップの表面を覆う弾性シートと、
    前記基板ステージの外周に位置し、前記弾性シートを保持するシート保持手段と、
    前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧する減圧手段と、
    弾性シートを介して基板上のチップに所定の加圧力を付与するボンディングヘッドと、を備え、
    チップが仮圧着された基板を基板ステージに載置する工程と、
    弾性シートを仮圧着したチップの表面に覆い、弾性シートを保持する工程と、
    前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を減圧下にする工程と、
    ボンディングヘッドを所定の高さまで下降させ、弾性シートを介して基板上のチップに所定の加圧力を所定時間付与する工程と、を有する圧着方法。     After aligning a plurality of chips on a substrate, a chip that is temporarily press-bonded via a resin is a pressure-bonding method that collectively press-bonds,
    A substrate stage that sucks and holds the back surface of the substrate to which the chip is crimped;
    An elastic sheet covering the surface of the temporarily crimped chip;
    A sheet holding means for holding the elastic sheet, located on the outer periphery of the substrate stage;
    Decompression means for decompressing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
    A bonding head that applies a predetermined pressing force to the chip on the substrate via the elastic sheet,
    A step of placing the substrate on which the chip is temporarily pressure-bonded on the substrate stage;
    Covering the surface of the chip temporarily bonded with the elastic sheet, and holding the elastic sheet;
    A step of reducing the pressure of the sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage;
    A step of lowering the bonding head to a predetermined height, and applying a predetermined pressure to the chip on the substrate for a predetermined time via the elastic sheet.
  7. 請求項６に記載の発明において、
    弾性シートを枚葉で供給し、一括圧着の動作毎に弾性シートを交換する工程を有する圧着方法。     In the invention of claim 6,
    A pressure-bonding method comprising a step of supplying an elastic sheet as a single sheet and replacing the elastic sheet for each batch pressure-bonding operation.
  8. 請求項６または７に記載の発明において、
    前記弾性シートに、耐熱温度３５０℃以上、熱収縮率が３５０℃で０．１％以下、および熱伝導率が１Ｗ／ｍ・Ｋ以上という特性を備えた材料を用いることを特徴とする圧着方法。     In the invention according to claim 6 or 7,
    A method for pressure bonding, characterized in that a material having a heat resistant temperature of 350 ° C. or higher, a thermal shrinkage rate of 350 ° C. of 0.1% or lower, and a thermal conductivity of 1 W / m · K or higher is used for the elastic sheet. .
  9. 請求項６から８のいずれかに記載の発明において、
    弾性シートを介して基板上のチップに所定の加圧力を所定時間付与する工程において、ボンディングヘッドと基板ステージに備えられた加熱および冷却手段を動作させる工程を含む圧着方法。     In the invention according to any one of claims 6 to 8,
    A pressure-bonding method including a step of operating heating and cooling means provided in a bonding head and a substrate stage in a step of applying a predetermined pressure to a chip on a substrate for a predetermined time via an elastic sheet.
  10. 請求項６から９のいずれかに記載の発明において、
    前記シート保持手段と前記弾性シートと前記基板ステージとにより形成された密閉空間を不活性ガス雰囲気にする工程を含む圧着方法。     In the invention according to any one of claims 6 to 9,
    A pressure-bonding method including a step of bringing a sealed space formed by the sheet holding means, the elastic sheet, and the substrate stage into an inert gas atmosphere.
  11. 請求項６から１０のいずれかに記載の発明において、前記ボンディングヘッドの加圧面が前記基板ステージに対して平行な状態を維持しながら下降させることを特徴とする圧着方法。 11. The pressure-bonding method according to claim 6, wherein the pressure surface of the bonding head is lowered while maintaining a state parallel to the substrate stage.
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