TWI791287B - Packaging device and packaging method - Google Patents

Packaging device and packaging method Download PDF

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TWI791287B
TWI791287B TW110134505A TW110134505A TWI791287B TW I791287 B TWI791287 B TW I791287B TW 110134505 A TW110134505 A TW 110134505A TW 110134505 A TW110134505 A TW 110134505A TW I791287 B TWI791287 B TW I791287B
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thermocompression bonding
bonding tool
packaging
semiconductor chip
cover film
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TW110134505A
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TW202314893A (en
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野口勇一郎
亞歷山大 詹吉羅夫
瀬山耕平
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日商新川股份有限公司
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Abstract

於將半導體晶片(100)封裝於基板(104)的封裝裝置(10)中,控制部(50)包括:封裝設備,於使蓋膜(110)介於半導體晶片(100)與熱壓接工具(16)之間的狀態下,將半導體晶片(100)按壓於基板(104),並且將熱壓接工具(16)加熱後加以冷卻,將半導體晶片(100)封裝於基板(104);以及剝離設備,於封裝半導體晶片(100)後,將熱壓接工具(16)加熱後使封裝頭(17)上升而自蓋膜(110)剝離。In the packaging device (10) for packaging the semiconductor chip (100) on the substrate (104), the control unit (50) includes: a packaging device for interposing the cover film (110) between the semiconductor chip (100) and the thermocompression bonding tool In the state between (16), pressing the semiconductor chip (100) on the substrate (104), and heating and cooling the thermocompression bonding tool (16), packaging the semiconductor chip (100) on the substrate (104); and The stripping device heats the thermocompression bonding tool (16) after the semiconductor chip (100) is packaged to lift the package head (17) to peel off the cover film (110).

Description

封裝裝置以及封裝方法Packaging device and packaging method

本發明是有關於一種封裝裝置的結構以及封裝方法,經由接著材料將半導體晶片封裝於作為基板或其他半導體晶片的被封裝體。The present invention relates to a structure of a packaging device and a packaging method. A semiconductor chip is packaged in a substrate or other semiconductor chip packaged body via an adhesive material.

先前以來,下述覆晶接合機(flip chip bonder)技術已廣為人知,即:將半導體晶片不經由線材而封裝於作為基板或其他半導體晶片的被封裝體。覆晶接合機預先於被封裝體塗佈包含熱硬化性樹脂的接著材料,藉由熱壓接工具將半導體晶片升溫及按壓,使電極上的焊料熔融並且使被封裝體之上的接著材料硬化後,將熱壓接工具冷卻而使焊料固化,將半導體晶片接合於基板。此時,於利用熱壓接工具將半導體晶片升溫及加壓時,有時被半導體晶片擠出的接著材料向上方蔓延,附著於封裝頭。Conventionally, the following flip chip bonder technology has been widely known, that is, a semiconductor chip is packaged in a packaged body that is a substrate or other semiconductor chips without using a wire. Flip chip bonding machine pre-coats an adhesive material containing thermosetting resin on the packaged body, heats up and presses the semiconductor chip with a thermocompression bonding tool, melts the solder on the electrode and hardens the adhesive material on the packaged body Thereafter, the thermocompression bonding tool is cooled to solidify the solder, and the semiconductor chip is bonded to the substrate. At this time, when the semiconductor chip is heated and pressurized by the thermocompression bonding tool, the adhesive material extruded by the semiconductor chip may spread upward and adhere to the packaging head.

為了防止此種接著材料對熱壓接工具的附著,揭示有以膜構件(蓋膜)將熱壓接工具的底面覆蓋的封裝裝置。例如,於專利文獻1中記載有,於接合頭設置熱壓接工具、及依序進給(feed)膜構件的膜構件搬送機構,藉由膜構件來防止接著材料附著於熱壓接工具。 [先前技術文獻] [專利文獻] In order to prevent such adhesion of the adhesive material to the thermocompression bonding tool, there is disclosed a packaging device that covers the bottom surface of the thermocompression bonding tool with a film member (cover film). For example, Patent Document 1 describes that a thermocompression bonding tool and a film member conveyance mechanism that sequentially feeds a film member are provided in a bonding head, and the film member is used to prevent an adhesive material from adhering to the thermocompression bonding tool. [Prior Art Literature] [Patent Document]

專利文獻1:日本專利特開2015-35493號公報Patent Document 1: Japanese Patent Laid-Open No. 2015-35493

[發明所欲解決之課題][Problem to be Solved by the Invention]

此外,專利文獻1所記載的封裝裝置中,若於將半導體晶片封裝於被封裝體時利用熱壓接工具將半導體晶片升溫及加壓,則有時介於熱壓接工具與半導體晶片之間的蓋膜發生熱膨脹,然後若將熱壓接工具冷卻,則蓋膜因冷卻而收縮,貼附於熱壓接工具的側面或底面。如此,若蓋膜貼附於熱壓接工具的側面或底面,則有時蓋膜不自熱壓接工具脫落。In addition, in the packaging device described in Patent Document 1, if the semiconductor chip is heated and pressurized by a thermocompression bonding tool when the semiconductor chip is packaged in the packaged body, there may be a gap between the thermocompression bonding tool and the semiconductor chip. The cover film thermally expands, and then if the thermocompression bonding tool is cooled, the cover film shrinks due to cooling and sticks to the side or bottom surface of the thermocompression bonding tool. In this way, if the cover film is attached to the side surface or the bottom surface of the thermocompression bonding tool, the cover film may not come off from the thermocompression bonding tool.

因此,本發明的目的在於,於使蓋膜介於熱壓接工具與半導體晶片之間並經由接著材料將半導體晶片封裝於被封裝體的封裝裝置中,於封裝後使熱壓接工具自蓋膜容易地剝離。 [解決課題之手段] Therefore, the object of the present invention is to make the cover film between the thermocompression bonding tool and the semiconductor chip and package the semiconductor chip in the packaging device of the packaged body through the adhesive material, and make the thermocompression bonding tool self-cover after packaging The film peeled off easily. [Means to solve the problem]

本發明的封裝裝置經由接著材料將半導體晶片封裝被封裝體,且其特徵在於包括:封裝頭,保持半導體晶片,於相對於被封裝體接近或遠離的方向移動,安裝有將半導體晶片按壓於被封裝體的熱壓接工具、及進行熱壓接工具的加熱和冷卻的工具加熱冷卻機構;膜配置機構,使蓋膜移動,將蓋膜配置於按壓於被封裝體的半導體晶片與熱壓接工具之間;以及控制部,控制封裝頭及膜配置機構的移動,並且藉由工具加熱冷卻機構來控制熱壓接工具的溫度,控制部包括:封裝設備,於蓋膜介於半導體晶片與熱壓接工具之間的狀態下,將半導體晶片按壓於被封裝體,並且將熱壓接工具加熱後加以冷卻,將半導體晶片封裝於被封裝體;以及剝離設備,於封裝半導體晶片後,將熱壓接工具加熱後使封裝頭上升而自蓋膜剝離。The packaging device of the present invention encapsulates the semiconductor chip into the packaged body via the adhesive material, and is characterized in that it includes: a packaging head, which holds the semiconductor chip, moves in a direction approaching or away from the packaged body, and is installed to press the semiconductor chip on the packaged body. The thermocompression bonding tool of the package, and the tool heating and cooling mechanism for heating and cooling the thermocompression bonding tool; the film arrangement mechanism moves the cover film, and arranges the cover film on the semiconductor chip pressed against the packaged body and thermocompression bonding Between the tools; and the control part, which controls the movement of the packaging head and the film arrangement mechanism, and controls the temperature of the thermocompression bonding tool through the tool heating and cooling mechanism. In the state between the crimping tools, the semiconductor chip is pressed on the packaged body, and the thermocompression bonding tool is heated and then cooled to package the semiconductor chip in the packaged body; and the peeling device, after the semiconductor chip is packaged, heats After the crimping tool is heated, the encapsulation head rises to peel off the cover film.

如此,於封裝半導體晶片後將熱壓接工具升溫至既定溫度,使封裝半導體晶片時貼附於熱壓接工具的側面或底面的蓋膜熱膨脹而減小對熱壓接工具的側面或底面的貼附力後,使封裝頭上升,故而可於使封裝頭上升時使熱壓接工具自蓋膜容易地剝離。In this way, after the semiconductor chip is packaged, the temperature of the thermocompression bonding tool is raised to a predetermined temperature, so that the cover film attached to the side or bottom surface of the thermocompression bonding tool when packaging the semiconductor chip is thermally expanded to reduce the impact on the side or bottom surface of the thermocompression bonding tool. After the adhesive force is applied, the sealing head is raised, so that the thermocompression bonding tool can be easily peeled off from the cover film when the sealing head is raised.

本發明的封裝裝置中,剝離設備亦可於將半導體晶片封裝於被封裝體後,於使封裝頭稍許上升狀態下,藉由工具加熱冷卻機構使熱壓接工具升溫至既定溫度後,使封裝頭上升。In the packaging device of the present invention, after the semiconductor chip is packaged in the packaged body, the peeling device can also make the package head up.

藉此,於熱壓接工具與蓋膜之間形成稍許的間隙,可於使熱壓接工具升溫時減少所封裝的半導體晶片或所硬化的接著材料的溫度上升,可抑制所封裝的半導體晶片或接著材料的劣化或損傷。Thereby, a slight gap is formed between the thermocompression bonding tool and the cover film, which can reduce the temperature rise of the packaged semiconductor chip or the hardened bonding material when the thermocompression bonding tool is heated up, and can suppress the temperature rise of the packaged semiconductor chip. or ensuing deterioration or damage of the material.

本發明的封裝裝置中,熱壓接工具亦可吸附保持半導體晶片,封裝設備使熱壓接工具吸附保持半導體晶片,使封裝頭下降並經由接著材料將半導體晶片暫時壓接於被封裝體之上,使蓋膜介於半導體晶片與熱壓接工具之間,按壓經暫時壓接的半導體晶片而將半導體晶片封裝於被封裝體。In the packaging device of the present invention, the thermocompression bonding tool can also adsorb and hold the semiconductor chip, and the packaging equipment makes the thermocompression bonding tool adsorb and hold the semiconductor chip, lowers the packaging head, and temporarily crimps the semiconductor chip on the packaged body through the bonding material. , the cover film is interposed between the semiconductor wafer and the thermocompression bonding tool, and the temporarily crimped semiconductor wafer is pressed to package the semiconductor wafer in the packaged body.

藉此,可不如專利文獻1所記載般於蓋膜設置通氣孔而封裝半導體晶片,可縮短節拍時間。Thereby, it is not possible to package the semiconductor chip by providing vent holes in the cover film as described in Patent Document 1, and the tact time can be shortened.

本發明的封裝方法經由接著材料將半導體晶片封裝於被封裝體,且其特徵在於包含:準備步驟,準備封裝裝置,所述封裝裝置包括封裝頭、工具加熱冷卻機構及膜配置機構,所述封裝頭保持半導體晶片,並且於相對於被封裝體接近或遠離的方向移動,於頂端安裝有將半導體晶片按壓於被封裝體的熱壓接工具,所述工具加熱冷卻機構安裝於封裝頭,進行熱壓接工具的加熱和冷卻,所述膜配置機構將蓋膜配置於半導體晶片與熱壓接工具之間;膜配置步驟,於將半導體晶片封裝於被封裝體時,藉由膜配置機構使蓋膜介於半導體晶片與熱壓接工具之間;封裝步驟,於蓋膜介於半導體晶片與熱壓接工具之間的狀態下,將半導體晶片按壓於被封裝體,並且將熱壓接工具加熱後加以冷卻,將半導體晶片封裝於被封裝體;以及剝離步驟,於封裝步驟之後,將熱壓接工具加熱後使封裝頭上升而自蓋膜剝離。 [發明的效果] The packaging method of the present invention encapsulates the semiconductor chip in the packaged body via the adhesive material, and is characterized in that it includes: a preparation step, preparing a packaging device, the packaging device includes a packaging head, a tool heating and cooling mechanism, and a film configuration mechanism, and the packaging The head holds the semiconductor wafer and moves in the direction of approaching or moving away from the packaged body. A thermocompression bonding tool that presses the semiconductor wafer to the packaged body is installed on the top. The tool heating and cooling mechanism is installed on the packaging head to perform thermal bonding. Heating and cooling of the crimping tool, the film disposing mechanism disposes the cover film between the semiconductor wafer and the thermocompression bonding tool; the film disposing step, when the semiconductor chip is packaged in the packaged body, the cover film is arranged by the film disposing mechanism The film is interposed between the semiconductor wafer and the thermocompression bonding tool; the packaging step is to press the semiconductor chip on the packaged body with the cover film interposed between the semiconductor wafer and the thermocompression bonding tool, and heat the thermocompression bonding tool After cooling, the semiconductor chip is packaged in the packaged body; and in the peeling step, after the packaging step, the thermocompression bonding tool is heated to lift the packaging head to peel off the cover film. [Effect of the invention]

本發明可於使蓋膜介於熱壓接工具與半導體晶片之間並經由接著材料將半導體晶片封裝於被封裝體的封裝裝置中,於封裝後使熱壓接工具自蓋膜容易地剝離。The present invention can intervene the cover film between the thermocompression bonding tool and the semiconductor chip and package the semiconductor chip in the packaging device through the adhesive material, and make the thermocompression bonding tool easily peel off from the cover film after packaging.

以下,一方面參照圖式一方面對實施形態的封裝裝置10加以說明。如圖1所示,封裝裝置10為藉由在作為被封裝體的基板104之上封裝多個半導體晶片100從而製造半導體裝置的裝置。半導體晶片100藉由覆晶接合機技術而封裝於基板104。具體而言,於各半導體晶片100的底面形成被稱為凸塊102的包含導電性材料的突起後,使半導體晶片100反轉,將凸塊102接合於在基板104的表面形成的電極105,藉此將半導體晶片100與基板104電性連接。Hereinafter, the packaging device 10 of the embodiment will be described with reference to the drawings. As shown in FIG. 1 , a packaging device 10 is a device for manufacturing a semiconductor device by packaging a plurality of semiconductor wafers 100 on a substrate 104 as a packaged body. The semiconductor chip 100 is packaged on the substrate 104 by flip-chip bonding technology. Specifically, after forming a protrusion made of a conductive material called a bump 102 on the bottom surface of each semiconductor wafer 100, the semiconductor wafer 100 is turned over, and the bump 102 is bonded to the electrode 105 formed on the surface of the substrate 104, In this way, the semiconductor chip 100 is electrically connected to the substrate 104 .

如圖2所示,於基板104,以二維陣列狀規定有供封裝半導體晶片100的封裝區塊106。圖示例中,於一個基板104以3列5行規定有15個封裝區塊106。於各封裝區塊106的表面形成有多個與半導體晶片100的凸塊102電性連接的電極105。另外,於各封裝區塊106,預先塗佈有被稱為非導電性膏(NCP)或非導電性膜(NCF)的接著材料108。接著材料108包含具有絕緣性並且具有熱硬化性的熱硬化性樹脂。藉由在該接著材料108之上載置半導體晶片100並按壓於基板104並且將半導體晶片100加熱,從而接著材料108硬化,將半導體晶片100機械地接著、固定於基板104。再者,如此於基板104預先塗佈接著材料108的方式通常稱為「先塗佈方式」。As shown in FIG. 2 , on the substrate 104 , packaging blocks 106 for packaging the semiconductor chips 100 are defined in a two-dimensional array. In the illustrated example, 15 packaging blocks 106 are defined in 3 columns and 5 rows on one substrate 104 . A plurality of electrodes 105 electrically connected to the bumps 102 of the semiconductor chip 100 are formed on the surface of each packaging block 106 . In addition, an adhesive material 108 called a non-conductive paste (NCP) or a non-conductive film (NCF) is coated in advance on each package block 106 . Next, the material 108 contains an insulating and thermosetting thermosetting resin. By placing the semiconductor wafer 100 on the adhesive material 108 and pressing it against the substrate 104 and heating the semiconductor wafer 100 , the adhesive material 108 is hardened, and the semiconductor wafer 100 is mechanically bonded and fixed to the substrate 104 . Furthermore, such a method of pre-coating the adhesive material 108 on the substrate 104 is generally referred to as a "pre-coating method".

封裝裝置10將各半導體晶片100暫時壓接後,封裝於基板104。暫時壓接為將半導體晶片100暫時置於基板104中對應的封裝區塊106(接著材料108)。另外,封裝為藉由將經暫時壓接的半導體晶片100加熱並且加壓,從而將半導體晶片100機械、電性連接於基板104。於封裝時,半導體晶片100是以接著材料108的硬化溫度以上且凸塊102的熔融溫度以上的溫度加熱。本例中,於多個封裝區塊106中連續執行半導體晶片100的暫時壓接後,連續執行該經暫時壓接的多個半導體晶片100的封裝。The packaging device 10 temporarily press-bonds each semiconductor chip 100 and then packages it on the substrate 104 . Temporary crimping is to temporarily place the semiconductor die 100 on the corresponding package block 106 (followed by the material 108 ) in the substrate 104 . In addition, the packaging is to mechanically and electrically connect the semiconductor chip 100 to the substrate 104 by heating and pressurizing the temporarily crimped semiconductor chip 100 . During packaging, the semiconductor chip 100 is heated at a temperature above the hardening temperature of the bonding material 108 and above the melting temperature of the bumps 102 . In this example, after the temporary pressure bonding of the semiconductor wafers 100 is continuously performed in the plurality of packaging blocks 106 , the packaging of the plurality of temporarily pressure-bonded semiconductor wafers 100 is continuously performed.

封裝裝置10為用以按所述順序將半導體晶片100封裝於基板104的裝置。該封裝裝置10具有接合平台20、封裝頭17、基台21、膜配置機構22及控制該些各部的移動的控制部50等。The packaging device 10 is a device for packaging the semiconductor chip 100 on the substrate 104 in the order described. This packaging apparatus 10 includes a bonding stage 20, a packaging head 17, a base 21, a film arrangement mechanism 22, a control unit 50 for controlling the movement of these units, and the like.

接合平台20為載置基板104的平台。於該接合平台20,例如設有抽吸保持基板104的抽吸孔(未圖示)、或用以加熱基板104的加熱器(未圖示)。該接合平台20由基台21支撐。The bonding stage 20 is a stage on which the substrate 104 is placed. The bonding stage 20 is provided with, for example, a suction hole (not shown) for sucking and holding the substrate 104 or a heater (not shown) for heating the substrate 104 . The bonding platform 20 is supported by a base 21 .

封裝頭17與接合平台20相向地設置,包含:本體11;隔熱塊12,安裝於本體11的下側;加熱器14,安裝於隔熱塊12的下側;以及熱壓接工具16,安裝於加熱器14的下側。The encapsulation head 17 is arranged opposite to the bonding platform 20, including: a body 11; a thermal insulation block 12 installed on the lower side of the main body 11; a heater 14 installed on the lower side of the thermal insulation block 12; and a thermocompression bonding tool 16, Installed on the lower side of the heater 14 .

本體11可藉由設於內部的驅動機構而以相對於接合平台20之上所吸附的基板104接近或遠離的方式於上下方向移動,並且可相對於基板104而亦於水平方向移動。The main body 11 can move up and down relative to the substrate 104 adsorbed on the bonding platform 20 by means of an internal driving mechanism, and can also move horizontally relative to the substrate 104 .

隔熱塊12為夾持於本體11與加熱器14之間,防止加熱器14的熱傳至本體11的陶瓷製的板狀構件。加熱器14是於氮化鋁等陶瓷的內部嵌埋由鉑或鎢等構成的發熱電阻體而成。The heat insulating block 12 is a ceramic plate-shaped member sandwiched between the main body 11 and the heater 14 to prevent the heat of the heater 14 from being transferred to the main body 11 . The heater 14 is formed by embedding a heating resistor made of platinum or tungsten in ceramics such as aluminum nitride.

於加熱器14的上表面,設有沿與圖1的紙面垂直的方向延伸的兩個冷卻槽15。而且,於隔熱塊12設有空氣流路13,該空氣流路13自側面以L字型延伸,將側面與設於加熱器14的冷卻槽15連通。加熱器14若自控制部50輸入電力,則發熱電阻體發熱而溫度上升,將安裝於加熱器14的下側的熱壓接工具16加熱。另外,若於隔熱塊12的空氣流路13中流動來自風扇19的空氣,則將加熱器14冷卻,藉此將熱壓接工具16冷卻。因此,隔熱塊12、加熱器14及風扇19構成將熱壓接工具16加熱及冷卻的工具加熱冷卻機構。Two cooling grooves 15 extending in a direction perpendicular to the paper surface of FIG. 1 are provided on the upper surface of the heater 14 . Furthermore, the heat insulating block 12 is provided with an air flow path 13 which extends in an L-shape from the side surface and communicates the side surface with the cooling groove 15 provided in the heater 14 . When electric power is input to the heater 14 from the control unit 50 , the heating resistor generates heat to increase its temperature, and heats the thermocompression bonding tool 16 attached below the heater 14 . In addition, when the air from the fan 19 flows through the air passage 13 of the heat insulating block 12 , the heater 14 is cooled, thereby cooling the thermocompression bonding tool 16 . Therefore, the heat insulating block 12 , the heater 14 , and the fan 19 constitute a tool heating and cooling mechanism for heating and cooling the thermocompression bonding tool 16 .

關於熱壓接工具16,上表面的大小為與加熱器14大致相同的大小,且於下側設有進行半導體晶片100的吸附及按壓的突部16a。突部16a的大小與半導體晶片100的大小大致相同。熱壓接工具16為陶瓷製。 於熱壓接工具16,形成有用以抽吸保持半導體晶片100的抽吸孔18。該抽吸孔18貫通加熱器14、隔熱塊12而自本體11連通於未圖示的抽吸泵,藉由該抽吸泵所產生的負壓將半導體晶片100抽吸保持於熱壓接工具16的突部16a的下表面。 The thermocompression bonding tool 16 has an upper surface approximately the same size as the heater 14 , and a protrusion 16 a for sucking and pressing the semiconductor wafer 100 is provided on the lower side. The size of the protrusion 16 a is substantially the same as the size of the semiconductor wafer 100 . The thermocompression bonding tool 16 is made of ceramics. In the thermocompression bonding tool 16, a suction hole 18 for suction holding the semiconductor wafer 100 is formed. The suction hole 18 passes through the heater 14 and the heat insulating block 12, and communicates with a suction pump (not shown) from the main body 11. The negative pressure generated by the suction pump sucks and holds the semiconductor wafer 100 on the thermocompression bonder. The lower surface of the protrusion 16 a of the tool 16 .

於封裝裝置10的基台21,設置有膜配置機構22,該膜配置機構22於封裝半導體晶片100時,使蓋膜110介於經暫時壓接的半導體晶片100與熱壓接工具16之間。本例中,使用沿一方向為長條的帶狀的蓋膜110。作為該蓋膜110的材料,耐熱性優異且接著材料108的剝離性高的材料合適。因此,作為蓋膜110的材料,例如可使用聚四氟乙烯(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)等氟樹脂。On the base 21 of the packaging device 10, a film arrangement mechanism 22 is provided. When the film arrangement mechanism 22 packages the semiconductor chip 100, the cover film 110 is interposed between the temporarily crimped semiconductor chip 100 and the thermocompression bonding tool 16. . In this example, a strip-shaped cover film 110 that is long in one direction is used. As a material of the cover film 110 , a material having excellent heat resistance and high peelability of the adhesive material 108 is suitable. Therefore, as a material of the cover film 110 , for example, a fluororesin such as polytetrafluoroethylene (PTFE) or tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA) can be used.

膜配置機構22具有將帶狀的蓋膜110依序向基板104的上方送出的膜送出機構24。膜送出機構24具有介隔接合平台20設於兩側的送出輥28a及捲取輥28b(以下,於不區分送出輥28a/捲取輥28b的情形時,簡稱為「進給輥28」)。蓋膜110架設於該一對進給輥28之間。藉由送出輥28a向既定的送出方向(圖1的箭頭29方向)旋轉,從而將新的蓋膜110依序送出。另外,藉由捲取輥28b與送出輥28a連動地向與送出輥28a相同的方向旋轉,從而將使用完畢的蓋膜110捲取於捲取輥28b並回收。即,藉由一對進給輥28向相同方向旋轉,從而進給蓋膜110。The film disposing mechanism 22 has a film sending mechanism 24 that sequentially sends the strip-shaped cover film 110 above the substrate 104 . The film delivery mechanism 24 has a delivery roller 28a and a take-up roller 28b provided on both sides with the bonding platform 20 interposed therebetween (hereinafter, when the delivery roller 28a/take-up roller 28b are not distinguished, they are simply referred to as "feed roller 28") . The cover film 110 is stretched between the pair of feed rollers 28 . New cover films 110 are sequentially sent out as the sending roller 28 a rotates in a predetermined sending direction (direction of arrow 29 in FIG. 1 ). Moreover, the used cover film 110 is wound up by the wind-up roller 28b and collect|recovered by the wind-up roller 28b and the send-out roller 28a rotating in the same direction as the send-out roller 28a. That is, the cover film 110 is fed by the pair of feed rollers 28 rotating in the same direction.

膜配置機構22更包括:膜移動機構30,使蓋膜110與所述膜送出機構24一起於水平方向移動。膜移動機構30具有:一對軌道32,沿第一方向(圖示例中為長方形的基板104的長條方向)延伸;以及移動塊34,沿著該軌道32滑動。另外,膜配置機構22包括:膜升降機構(未圖示),使蓋膜110與膜送出機構24一起升降。膜升降機構只要為可使進給輥28的高度可變的機構,則並無特別限定。The film arrangement mechanism 22 further includes a film moving mechanism 30 for moving the cover film 110 in the horizontal direction together with the film delivery mechanism 24 . The film moving mechanism 30 has a pair of rails 32 extending in a first direction (the longitudinal direction of the rectangular substrate 104 in the illustrated example), and a moving block 34 sliding along the rails 32 . In addition, the film arrangement mechanism 22 includes a film lifting mechanism (not shown) that lifts the cover film 110 together with the film delivery mechanism 24 . The film raising and lowering mechanism is not particularly limited as long as the height of the feed roller 28 can be varied.

控制部50連接於封裝頭17的本體11、加熱器14、風扇19、膜配置機構22及接合平台20,控制封裝頭17及膜配置機構22的移動,並且藉由加熱器14及風扇19來控制熱壓接工具16的溫度。控制部50例如包括進行各種運算的中央處理單元(Central Processing Unit,CPU)、以及記憶各種資料及程式的記憶體。於控制部50,輸入各種感測器的檢測結果,控制部50根據該檢測結果來進行各部的驅動控制及溫度控制。例如,控制部50進行封裝頭17的移動控制或熱壓接工具16及接合平台20的溫度控制、抽吸機構的驅動控制等。另外,控制部50為了將蓋膜110配置於適當的位置,亦進行膜配置機構22的移動控制。The control unit 50 is connected to the body 11 of the encapsulation head 17, the heater 14, the fan 19, the film arrangement mechanism 22, and the bonding platform 20, controls the movement of the encapsulation head 17 and the film arrangement mechanism 22, and uses the heater 14 and the fan 19 to The temperature of the thermocompression bonding tool 16 is controlled. The control unit 50 includes, for example, a central processing unit (Central Processing Unit, CPU) for performing various calculations, and a memory for storing various data and programs. Detection results of various sensors are input to the control unit 50, and the control unit 50 performs drive control and temperature control of each unit based on the detection results. For example, the control unit 50 performs movement control of the packaging head 17 , temperature control of the thermocompression bonding tool 16 and the bonding stage 20 , drive control of the suction mechanism, and the like. In addition, the control unit 50 also performs movement control of the film arrangement mechanism 22 in order to arrange the cover film 110 at an appropriate position.

以下,一方面參照圖3至圖14一方面對實施形態的封裝裝置10的動作加以說明。於封裝半導體晶片100時,於接合平台20載置基板104。如圖2所示,於基板104的封裝區塊106預先塗佈接著材料108,或者載置於接合平台20後塗佈接著材料108。Hereinafter, the operation of the packaging device 10 according to the embodiment will be described with reference to FIGS. 3 to 14 . When packaging the semiconductor chip 100 , the substrate 104 is placed on the bonding platform 20 . As shown in FIG. 2 , the bonding material 108 is pre-coated on the packaging block 106 of the substrate 104 , or the bonding material 108 is coated after being placed on the bonding platform 20 .

控制部50使半導體晶片100暫時壓接於基板104的各封裝區塊106。具體而言,控制部50將封裝頭17移動至未圖示的晶片供給源,使安裝於頂端的熱壓接工具16的突部16a抽吸保持半導體晶片100。繼而,控制部50驅動封裝頭17的本體11,使封裝頭17移動至對應的封裝區塊106的正上方。The control unit 50 temporarily press-bonds the semiconductor wafer 100 to each package block 106 of the substrate 104 . Specifically, the control unit 50 moves the packaging head 17 to a wafer supply source (not shown), and suction-holds the semiconductor wafer 100 on the protrusion 16 a of the thermocompression bonding tool 16 attached to the tip. Then, the control unit 50 drives the body 11 of the encapsulation head 17 to move the encapsulation head 17 directly above the corresponding encapsulation block 106 .

然後,控制部50如圖3所示,使封裝頭17向基板104如箭頭90般下降,將頂端的熱壓接工具16的突部16a所抽吸保持的半導體晶片100按壓於對應的封裝區塊106(或接著材料108)之上。藉此,將半導體晶片100暫時壓接於基板104及接著材料108之上。暫時壓接一個半導體晶片100後,封裝頭17解除該半導體晶片100的抽吸後上升。然後,封裝頭17以同樣的順序逐漸進行所有半導體晶片100的暫時壓接。Then, as shown in FIG. 3 , the control unit 50 lowers the encapsulation head 17 toward the substrate 104 as indicated by an arrow 90, and presses the semiconductor wafer 100 sucked and held by the protrusion 16a of the thermocompression bonding tool 16 at the top to the corresponding encapsulation area. block 106 (or next to material 108). Thereby, the semiconductor wafer 100 is temporarily pressure-bonded on the substrate 104 and the bonding material 108 . After one semiconductor wafer 100 is temporarily pressure-bonded, the packaging head 17 releases the suction of the semiconductor wafer 100 and moves up. Then, the encapsulation head 17 gradually performs temporary pressure bonding of all the semiconductor wafers 100 in the same order.

於暫時壓接處理時,控制部50驅動膜移動機構30,使蓋膜110移動至退避位置。所謂退避位置,為於水平方向遠離供暫時壓接半導體晶片100的封裝區塊106的位置。During the temporary pressure bonding process, the control unit 50 drives the film moving mechanism 30 to move the cover film 110 to the withdrawn position. The retreat position is a position away from the packaging block 106 for temporarily pressing the semiconductor chip 100 in the horizontal direction.

暫時壓接處理結束後,控制部50執行膜配置步驟。控制部50如圖4所示,驅動膜移動機構30,使蓋膜110於水平方向移動,移動至經暫時壓接的半導體晶片100的正上方且該半導體晶片100與熱壓接工具16之間的位置。繼而,控制部50藉由膜升降機構使蓋膜110下降,使蓋膜110成為與半導體晶片100的上表面大致相同的高度位置。After the temporary pressure-bonding process is completed, the control unit 50 executes the film arrangement step. As shown in FIG. 4 , the control unit 50 drives the film moving mechanism 30 to move the cover film 110 in the horizontal direction until it is directly above the temporarily crimped semiconductor wafer 100 and between the semiconductor wafer 100 and the thermocompression bonding tool 16. s position. Next, the control unit 50 lowers the cover film 110 by using the film lift mechanism so that the cover film 110 is at substantially the same height as the upper surface of the semiconductor wafer 100 .

控制部50於圖14的時刻t0開始封裝步驟。控制部50於圖14的時刻t0使封裝頭17的本體11下降,如圖5所示般以熱壓接工具16的突部16a自蓋膜110之上開始按壓經暫時壓接的半導體晶片100。由於按壓,接著材料108於半導體晶片100的周圍滲出,一部分接著材料108於半導體晶片100的側面蔓延,到達蓋膜110的下表面。另外,由於按壓,形成於半導體晶片100的凸塊102接觸基板104的電極105。The control unit 50 starts the encapsulation step at time t0 in FIG. 14 . The control unit 50 lowers the body 11 of the encapsulation head 17 at time t0 in FIG. . Due to the pressing, the bonding material 108 seeps out around the semiconductor wafer 100 , and a part of the bonding material 108 spreads on the side of the semiconductor chip 100 and reaches the lower surface of the cover film 110 . In addition, due to the pressing, the bumps 102 formed on the semiconductor wafer 100 contact the electrodes 105 of the substrate 104 .

控制部50於圖12所示的時刻t1,開始向加熱器14供給電力,藉由加熱器14使熱壓接工具16升溫。若熱壓接工具16的溫度上升,則由於熱而半導體晶片100受到加熱,接著材料108軟化。若進一步使溫度上升而達到凸塊102的熔融溫度以上,則半導體晶片100的凸塊102熔融。此時,控制部50如圖14所示,以半導體晶片100距基板104的高度於封裝後成為一定高度的方式控制封裝頭17的高度。另外,若溫度上升至接著材料108的硬化溫度,則接著材料108開始熱硬化。如此,控制部50將熱壓接工具16加熱至接著材料108的硬化溫度以上且凸塊102的熔融溫度以上的溫度T1為止。溫度T1例如亦可為300℃左右。The control unit 50 starts supplying electric power to the heater 14 at time t1 shown in FIG. 12 , and the temperature of the thermocompression bonding tool 16 is raised by the heater 14 . When the temperature of the thermocompression bonding tool 16 rises, the semiconductor wafer 100 is heated by the heat, and the material 108 is softened accordingly. When the temperature is further increased to reach the melting temperature of the bumps 102 or higher, the bumps 102 of the semiconductor wafer 100 are melted. At this time, as shown in FIG. 14 , the control unit 50 controls the height of the packaging head 17 so that the height of the semiconductor wafer 100 from the substrate 104 becomes a constant height after packaging. In addition, when the temperature rises to the hardening temperature of the bonding material 108, the bonding material 108 starts thermal hardening. In this way, the control unit 50 heats the thermocompression bonding tool 16 to a temperature T1 that is not less than the hardening temperature of the adhesive material 108 and not less than the melting temperature of the bump 102 . The temperature T1 may be, for example, about 300°C.

蓋膜110於升溫過程的期間中,由於熱壓接工具16進行的加熱,而如圖5、圖6所示的箭頭91所示般,自熱壓接工具16向外側逐漸熱膨脹。另外,蓋膜110因按壓而以稍向下凹陷的方式變形。因此,如圖6所示,蓋膜110以自熱壓接工具16的突部16a的底面的角向斜上方延伸的方式變形。During the heating process, the cover film 110 gradually thermally expands outward from the thermocompression bonding tool 16 as shown by the arrow 91 shown in FIGS. 5 and 6 due to the heating by the thermocompression bonding tool 16 . In addition, the cover film 110 is deformed to be slightly depressed downward by pressing. Therefore, as shown in FIG. 6 , the cover film 110 is deformed so as to extend obliquely upward from the corner of the bottom surface of the protrusion 16 a of the thermocompression bonding tool 16 .

控制部50於圖12的時刻t2啟動風扇19,如圖7的箭頭92所示,開始於隔熱塊12的空氣流路13中流動冷卻空氣。冷卻空氣自空氣流路13於加熱器14的冷卻槽15中流動,自冷卻槽15向圖7的紙面垂直方向流出。藉此,加熱器14被冷卻而溫度降低,伴隨於此,熱壓接工具16的溫度亦降低,熔融的凸塊102硬化,於時刻t3完成與基板104的電極105的接合。另外,經熱硬化的接著材料108的溫度亦降低。藉此,控制部50結束封裝步驟。The controller 50 activates the fan 19 at time t2 in FIG. 12 , and starts to flow cooling air through the air passage 13 of the heat insulating block 12 as shown by the arrow 92 in FIG. 7 . The cooling air flows through the cooling groove 15 of the heater 14 from the air flow path 13 , and flows out from the cooling groove 15 in a direction perpendicular to the paper surface of FIG. 7 . Accordingly, the temperature of the heater 14 is cooled down, and accordingly, the temperature of the thermocompression bonding tool 16 is also lowered, and the melted bump 102 is hardened, and the bonding with the electrode 105 of the substrate 104 is completed at time t3. In addition, the temperature of the thermally hardened adhesive material 108 also decreases. Thereby, the control unit 50 ends the encapsulation step.

若因封裝步驟中的熱壓接工具16的冷卻而熱壓接工具16的溫度逐漸降低,則蓋膜110的溫度亦逐漸降低。於是,圖6中自熱壓接工具16的突部16a的底面的角部向斜上方延伸的部分因冷卻而如圖7、圖8的箭頭93所示,向熱壓接工具16的突部16a的側面逐漸收縮。而且,若進一步冷卻,則貼附於熱壓接工具16的突部16a的側面或底面。貼附力f自圖13的時刻t2至時刻t3逐漸變大,於時刻t3,貼附力f達到f3。如此,若蓋膜110貼附於熱壓接工具16的突部16a的側面或底面,則有時於使封裝頭17上升時,蓋膜110不自熱壓接工具16脫落。If the temperature of the thermocompression bonding tool 16 gradually decreases due to the cooling of the thermocompression bonding tool 16 in the packaging step, the temperature of the cover film 110 also gradually decreases. Then, in FIG. 6 , the portion extending obliquely upward from the corner of the bottom surface of the protrusion 16a of the thermocompression bonding tool 16 is cooled, as shown by arrow 93 in FIGS. 7 and 8 , toward the protrusion of the thermocompression bonding tool 16. The sides of 16a taper gradually. And when it cools further, it sticks to the side surface or the bottom surface of the protrusion 16a of the thermocompression bonding tool 16. The sticking force f gradually increases from time t2 to time t3 in FIG. 13 , and at time t3, the sticking force f reaches f3. In this way, if the cover film 110 is attached to the side surface or the bottom surface of the protrusion 16 a of the thermocompression bonding tool 16 , the cover film 110 may not fall off from the thermocompression bonding tool 16 when the sealing head 17 is raised.

控制部50於空氣流路13中流動來自風扇19的冷卻空氣而將加熱器14冷卻,藉此將熱壓接工具16冷卻。而且,於圖12所示的時刻t3熱壓接工具16的溫度降低至溫度T3後,停止風扇19,停止向空氣流路13流入冷卻空氣。藉此,半導體晶片100的封裝結束。溫度T3例如亦可設為接著材料108開始軟化的溫度以下。藉此,可抑制下述情況,即:於熱壓接工具16的突部16a吸附保持半導體晶片100而暫時壓接於接著材料108之上時,接著材料108軟化,暫時壓接的半導體晶片100的位置偏移。The controller 50 cools the heater 14 by flowing the cooling air from the fan 19 in the air flow path 13 , thereby cooling the thermocompression bonding tool 16 . Then, after the temperature of the thermocompression bonding tool 16 drops to the temperature T3 at time t3 shown in FIG. 12 , the fan 19 is stopped, and the flow of cooling air into the air flow path 13 is stopped. Thereby, the packaging of the semiconductor wafer 100 is completed. For example, the temperature T3 may be set below the temperature at which the adhesive material 108 starts to soften. Thereby, it can be suppressed that when the protrusion 16a of the thermocompression bonding tool 16 absorbs and holds the semiconductor wafer 100 and temporarily press-bonds it on the bonding material 108, the bonding material 108 softens and the temporarily-bonded semiconductor wafer 100 position offset.

控制部50如圖14所示,於自封裝開始的時刻t0至半導體晶片100的封裝結束的時刻t3為止之間,以熱壓接工具16的高度成為一定的方式來控制封裝頭17的高度。若成為封裝步驟結束的圖14的時刻t3,則控制部50開始剝離步驟。控制部50於時刻t3驅動封裝頭17的本體11,使熱壓接工具16的高度稍許上升高度Δh,並保持其高度。As shown in FIG. 14 , the control unit 50 controls the height of the mounting head 17 so that the height of the thermocompression bonding tool 16 becomes constant between the time t0 when the packaging starts and the time t3 when the packaging of the semiconductor wafer 100 ends. When the time t3 in FIG. 14 at which the sealing step is completed, the control unit 50 starts the peeling step. The control unit 50 drives the body 11 of the encapsulation head 17 at time t3 to slightly increase the height of the thermocompression bonding tool 16 by a height Δh and maintain the height.

如圖9所示,若熱壓接工具16的高度升高Δh,則貼附於熱壓接工具16的突部16a的側面或底面的蓋膜110保持貼附於熱壓接工具16的突部16a的側面或底面的狀態而與熱壓接工具16一起稍許上升。於是,於蓋膜110與封裝結束的半導體晶片100的上表面之間形成稍許的間隙。As shown in FIG. 9, if the height of the thermocompression bonding tool 16 increases by Δh, the cover film 110 attached to the side or bottom surface of the protrusion 16a of the thermocompression bonding tool 16 remains attached to the protrusion of the thermocompression bonding tool 16. According to the state of the side surface or the bottom surface of the portion 16a, the thermocompression bonding tool 16 is raised slightly. Thus, a slight gap is formed between the cover film 110 and the upper surface of the packaged semiconductor wafer 100 .

控制部50於保持熱壓接工具16的高度的狀態下,於圖12的時刻t3向加熱器14供給電力,藉由加熱器14使熱壓接工具16升溫至既定溫度T2。藉此,如圖8所示,貼附於熱壓接工具16的突部16a的側面或底面的蓋膜110如圖9、圖10所示的箭頭94般熱膨脹,離開突部16a的側面或底面。而且,如圖12、圖13的時刻t3至時刻t4般,伴隨熱壓接工具16的溫度上升,蓋膜110對熱壓接工具16的貼附力f減小。而且,若熱壓接工具16的溫度於時刻t4上升至既定溫度T2,則蓋膜110的貼附力f減小至f2。The controller 50 supplies electric power to the heater 14 at time t3 in FIG. 12 while maintaining the height of the thermocompression bonding tool 16, and the heater 14 raises the temperature of the thermocompression bonding tool 16 to a predetermined temperature T2. Thereby, as shown in FIG. 8, the cover film 110 attached to the side or bottom surface of the protrusion 16a of the thermocompression bonding tool 16 thermally expands like the arrow 94 shown in FIGS. bottom surface. 12 and 13 from time t3 to time t4, as the temperature of the thermocompression bonding tool 16 rises, the adhesion force f of the cover film 110 to the thermocompression bonding tool 16 decreases. Moreover, if the temperature of the thermocompression bonding tool 16 rises to a predetermined temperature T2 at time t4, the adhesion force f of the cover film 110 decreases to f2.

若熱壓接工具16的溫度成為既定溫度T2,則控制部50於時刻t4停止向加熱器14供給電力,驅動封裝頭17的本體11,如圖11所示的箭頭95般使封裝頭17上升。此時,架設於一對進給輥28之間的蓋膜110保持原本的位置而不上升,由於對熱壓接工具16的貼附力f減小至f2,故而熱壓接工具16自蓋膜110剝離而與本體11一併上升。藉此,剝離步驟結束。When the temperature of the thermocompression bonding tool 16 reaches the predetermined temperature T2, the control unit 50 stops supplying power to the heater 14 at time t4, drives the body 11 of the encapsulation head 17, and raises the encapsulation head 17 as shown by the arrow 95 in FIG. 11 . . At this time, the cover film 110 erected between the pair of feed rollers 28 maintains its original position and does not rise. Since the adhesion force f to the thermocompression bonding tool 16 is reduced to f2, the thermocompression bonding tool 16 is self-covered. The film 110 peels off and rises together with the main body 11 . With this, the stripping step ends.

控制部50使封裝頭17上升後,再次啟動風扇19,將加熱器14及熱壓接工具16冷卻至溫度T3。After the control unit 50 raises the encapsulation head 17, the fan 19 is turned on again to cool the heater 14 and the thermocompression bonding tool 16 to the temperature T3.

此處,既定溫度T2只要為於使封裝頭17上升時可使蓋膜110的貼附力f減小至蓋膜110離開熱壓接工具16的程度的溫度,則可自由設定。例如,可設為溫度T1的50%左右的溫度,亦可設定為150℃~200℃左右。Here, the predetermined temperature T2 can be freely set as long as it is a temperature at which the adhesion force f of the cover film 110 can be reduced to the extent that the cover film 110 separates from the thermocompression bonding tool 16 when the sealing head 17 is raised. For example, the temperature may be set at about 50% of the temperature T1, or may be set at about 150°C to 200°C.

如以上所說明,實施形態的封裝裝置10於封裝半導體晶片100後,將熱壓接工具16升溫至既定溫度T2,使封裝半導體晶片100時貼附於熱壓接工具16的側面或底面的蓋膜110熱膨脹而減小對熱壓接工具16的側面或底面的貼附力f後,使封裝頭17上升,故而可於使封裝頭17上升時使熱壓接工具16自蓋膜110容易地剝離。As described above, the packaging device 10 of the embodiment raises the temperature of the thermocompression bonding tool 16 to a predetermined temperature T2 after packaging the semiconductor chip 100, so that the cover attached to the side or bottom surface of the thermocompression bonding tool 16 when packaging the semiconductor chip 100 After the film 110 thermally expands and reduces the adhesive force f to the side or bottom surface of the thermocompression bonding tool 16, the encapsulation head 17 is raised, so the thermocompression bonding tool 16 can be easily removed from the cover film 110 when the encapsulation head 17 is raised. peel off.

另外,實施形態的封裝裝置10於封裝半導體晶片100後,使封裝頭17稍許上升,於在熱壓接工具16與蓋膜110之間形成稍許的間隙的狀態下,使熱壓接工具16升溫,故而可於使熱壓接工具16升溫時減少所封裝的半導體晶片100或所硬化的接著材料108的溫度上升,可抑制所封裝的半導體晶片100或接著材料108的劣化或損傷。進而,加熱器14的熱不傳至半導體晶片100或接著材料108,故而可使熱壓接工具16及蓋膜110的溫度於短時間上升至既定溫度T2。因此,可使節拍時間不變長,並且使熱壓接工具16自蓋膜110容易地剝離。In addition, in the packaging device 10 of the embodiment, after packaging the semiconductor chip 100, the packaging head 17 is raised slightly, and the temperature of the thermocompression bonding tool 16 is raised in a state where a slight gap is formed between the thermocompression bonding tool 16 and the cover film 110. Therefore, the temperature rise of the packaged semiconductor chip 100 or the hardened adhesive material 108 can be reduced when the temperature of the thermocompression bonding tool 16 is raised, and the deterioration or damage of the packaged semiconductor chip 100 or the adhesive material 108 can be suppressed. Furthermore, the heat of the heater 14 is not transferred to the semiconductor wafer 100 or the bonding material 108 , so the temperature of the thermocompression bonding tool 16 and the cover film 110 can be raised to a predetermined temperature T2 in a short time. Therefore, the thermocompression bonding tool 16 can be easily peeled off from the cover film 110 without increasing the takt time.

另外,實施形態的封裝裝置10使熱壓接工具16吸附保持半導體晶片100,將半導體晶片100暫時壓接於基板104之上的接著材料108之上,然後使蓋膜110介於經暫時壓接的半導體晶片100與熱壓接工具16之間,將半導體晶片100加熱、按壓而將半導體晶片100封裝於基板104,故而無需如專利文獻1所記載的先前技術的封裝裝置般於蓋膜110開出通氣孔,可較先前技術的封裝裝置進一步縮短節拍時間。In addition, the packaging device 10 of the embodiment makes the thermocompression bonding tool 16 absorb and hold the semiconductor chip 100, temporarily press-bonds the semiconductor chip 100 on the adhesive material 108 on the substrate 104, and then puts the cover film 110 between them. between the semiconductor wafer 100 and the thermocompression bonding tool 16, the semiconductor wafer 100 is heated and pressed to package the semiconductor wafer 100 on the substrate 104, so there is no need to open the cover film 110 like the prior art packaging device described in Patent Document 1. The vent hole can further shorten the takt time compared with the packaging device of the prior art.

再者,封裝裝置10中,亦可於封裝半導體晶片100後,不使封裝頭17上升而使熱壓接工具16升溫。此時亦與上文所說明同樣地,可藉由蓋膜110的熱膨脹而減小貼附力f,使熱壓接工具16自蓋膜110容易地剝離。然而,此時既定溫度T2亦可設為較前例稍更低的例如100℃~150℃左右,以可抑制所封裝的半導體晶片100或所硬化的接著材料108的熱劣化等。Furthermore, in the packaging device 10 , after the semiconductor chip 100 is packaged, the temperature of the thermocompression bonding tool 16 may be raised without raising the packaging head 17 . At this time, as described above, the thermal expansion of the cover film 110 can reduce the adhesion force f, so that the thermocompression bonding tool 16 can be easily peeled off from the cover film 110 . However, at this time, the predetermined temperature T2 can also be set slightly lower than the previous example, for example, about 100° C. to 150° C., so as to suppress thermal degradation of the packaged semiconductor chip 100 or the hardened adhesive material 108 .

以上的說明中,設封裝裝置10將半導體晶片100封裝於基板104之上進行了說明,但不限於此,亦可將半導體晶片100封裝於其他半導體晶片100之上。此時,其他半導體晶片100與基板104同樣地構成被封裝體。In the above description, it has been described that the packaging device 10 packages the semiconductor chip 100 on the substrate 104 , but the invention is not limited thereto, and the semiconductor chip 100 can also be packaged on other semiconductor chips 100 . At this time, the other semiconductor wafer 100 constitutes a packaged body similarly to the substrate 104 .

10:封裝裝置10: Encapsulation device

11:本體11: Ontology

12:隔熱塊12: Insulation block

13:空氣流路13: Air flow path

14:加熱器14: heater

15:冷卻槽15: cooling tank

16:熱壓接工具16:Thermal crimping tool

16a:突部16a: protrusion

17:封裝頭17: Encapsulation header

18:抽吸孔18: suction hole

19:風扇19: fan

20:接合平台20: Engaging Platform

21:基台21: Abutment

22:膜配置機構22: Membrane configuration mechanism

24:膜送出機構24: Film delivery mechanism

28:進給輥28: Feed roller

28a:送出輥28a: Send out roller

28b:捲取輥28b: Take-up roller

29、90、91、92、93、94、95:箭頭29, 90, 91, 92, 93, 94, 95: Arrows

30:膜移動機構30: Membrane moving mechanism

32:軌道32: track

34:移動塊34: Moving blocks

50:控制部50: Control Department

100:半導體晶片100: semiconductor wafer

102:凸塊102: Bump

104:基板104: Substrate

105:電極105: electrode

106:封裝區塊106: Encapsulation block

108:接著材料108: Subsequent material

110:蓋膜110: cover film

T:熱壓接工具溫度T: Thermal crimping tool temperature

T1、T3:溫度T1, T3: temperature

T2:既定溫度T2: established temperature

f、f1、f2:貼附力f, f1, f2: Adhesion force

t0、t1、t2、t3、t4:時刻t0, t1, t2, t3, t4: time

Δh:高度Δh: height

圖1為表示實施形態的封裝裝置的構成的系統圖。 圖2為實施形態的封裝裝置的概略平面圖。 圖3為表示半導體晶片的暫時壓接動作的側面圖。 圖4為表示使蓋膜介於經暫時壓接的半導體晶片與熱壓接工具之間的狀態的側面圖。 圖5為表示封裝半導體晶片時的升溫動作的側面圖。 圖6為表示圖5的A部的詳細的側面圖。 圖7為表示封裝半導體晶片時的冷卻動作的側面圖。 圖8為表示圖7的B部的詳細的側面圖。 圖9為表示封裝後的升溫動作的側面圖。 圖10為表示圖9所示的C部的詳細的側面圖。 圖11為表示於升溫動作後使封裝頭上升的狀態的側面圖。 圖12為表示熱壓接工具的溫度變化的圖表。 圖13為表示蓋膜對熱壓接工具的貼附力的變化的圖表。 圖14為表示熱壓接工具的高度的變化的圖表。 FIG. 1 is a system diagram showing the configuration of a packaging device according to the embodiment. Fig. 2 is a schematic plan view of a packaging device according to the embodiment. Fig. 3 is a side view showing a temporary pressure-bonding operation of a semiconductor wafer. 4 is a side view showing a state in which a cover film is interposed between a temporarily pressure-bonded semiconductor wafer and a thermocompression bonding tool. Fig. 5 is a side view showing a temperature raising operation when packaging a semiconductor chip. Fig. 6 is a detailed side view showing part A of Fig. 5 . Fig. 7 is a side view showing a cooling operation when packaging a semiconductor chip. Fig. 8 is a detailed side view showing part B in Fig. 7 . Fig. 9 is a side view showing the temperature raising operation after packaging. Fig. 10 is a detailed side view showing part C shown in Fig. 9 . Fig. 11 is a side view showing a state in which the sealing head is raised after the temperature raising operation. Fig. 12 is a graph showing temperature changes of a thermocompression bonding tool. Fig. 13 is a graph showing changes in adhesion force of the cover film to the thermocompression bonding tool. Fig. 14 is a graph showing changes in the height of the thermocompression bonding tool.

10:封裝裝置 10: Encapsulation device

11:本體 11: Ontology

12:隔熱塊 12: Insulation block

13:空氣流路 13: Air flow path

14:加熱器 14: heater

15:冷卻槽 15: cooling tank

16:熱壓接工具 16:Thermal crimping tool

16a:突部 16a: protrusion

17:封裝頭 17: Encapsulation header

18:抽吸孔 18: suction hole

19:風扇 19: fan

20:接合平台 20: Engaging Platform

21:基台 21: Abutment

22:膜配置機構 22: Membrane configuration mechanism

24:膜送出機構 24: Film delivery mechanism

28a:送出輥 28a: Send out roller

28b:捲取輥 28b: Take-up roller

29:箭頭 29: Arrow

30:膜移動機構 30: Membrane moving mechanism

32:軌道 32: track

34:移動塊 34: Moving blocks

50:控制部 50: Control Department

100:半導體晶片 100: semiconductor wafer

102:凸塊 102: Bump

104:基板 104: Substrate

105:電極 105: electrode

108:接著材料 108: Subsequent material

110:蓋膜 110: cover film

Claims (4)

一種封裝裝置,經由接著材料將半導體晶片封裝於被封裝體,且其特徵在於包括:封裝頭,保持所述半導體晶片,於相對於所述被封裝體接近或遠離的方向移動,安裝有將所述半導體晶片按壓於所述被封裝體的熱壓接工具、及進行所述熱壓接工具的加熱和冷卻的工具加熱冷卻機構;膜配置機構,使蓋膜移動,將所述蓋膜配置於按壓於所述被封裝體的所述半導體晶片與所述熱壓接工具之間;以及控制部,控制所述封裝頭及所述膜配置機構的移動,並且藉由所述工具加熱冷卻機構來控制所述熱壓接工具的溫度,所述控制部具有:封裝設備,於所述蓋膜介於所述半導體晶片與所述熱壓接工具之間的狀態下,將所述半導體晶片按壓於所述被封裝體,並且將所述熱壓接工具加熱後加以冷卻,將所述半導體晶片封裝於所述被封裝體;以及剝離設備,於封裝所述半導體晶片後,將所述熱壓接工具加熱以減小所述熱壓接工具與所述蓋膜之間的貼附力後,使所述封裝頭上升而自所述蓋膜剝離。 A packaging device for packaging a semiconductor chip in a packaged body via an adhesive material, and is characterized in that it includes: a packaging head, holding the semiconductor chip, moving in a direction of approaching or moving away from the packaged body, and installing a The thermocompression bonding tool for pressing the semiconductor wafer on the packaged body, and the tool heating and cooling mechanism for heating and cooling the thermocompression bonding tool; the film arrangement mechanism moves the cover film, and arranges the cover film on the Pressed between the semiconductor wafer of the packaged body and the thermocompression bonding tool; and a control part that controls the movement of the encapsulation head and the film arrangement mechanism, and uses the tool heating and cooling mechanism to The temperature of the thermocompression bonding tool is controlled, and the control unit has a packaging device for pressing the semiconductor wafer on the thermocompression bonding tool in a state where the cover film is interposed between the semiconductor wafer and the thermocompression bonding tool. The object to be packaged, and the thermocompression bonding tool is heated and then cooled, and the semiconductor chip is packaged in the body to be packaged; After the tool is heated to reduce the adhesive force between the thermocompression bonding tool and the cover film, the encapsulation head is lifted to peel off from the cover film. 如請求項1所述的封裝裝置,其中所述剝離設備將所述半導體晶片封裝於所述被封裝體後,於使所述封裝頭稍許上升的狀態下,藉由所述工具加熱冷卻機構使 所述熱壓接工具升溫至既定溫度後,使所述封裝頭上升。 The packaging device according to claim 1, wherein after the stripping device has packaged the semiconductor chip in the object to be packaged, in a state where the packaging head is raised slightly, the heating and cooling mechanism of the tool makes the After the temperature of the thermocompression bonding tool is raised to a predetermined temperature, the encapsulation head is raised. 如請求項1或請求項2所述的封裝裝置,其中所述熱壓接工具吸附保持所述半導體晶片,所述封裝設備使所述熱壓接工具吸附保持所述半導體晶片,使所述封裝頭下降,經由所述接著材料將所述半導體晶片暫時壓接於所述被封裝體之上,使所述蓋膜介於所述半導體晶片與所述熱壓接工具之間,按壓經暫時壓接的所述半導體晶片而將所述半導體晶片封裝於所述被封裝體。 The packaging device according to claim 1 or claim 2, wherein the thermocompression bonding tool absorbs and holds the semiconductor wafer, and the packaging device makes the thermocompression bonding tool adsorb and hold the semiconductor wafer, so that the package The head is lowered, and the semiconductor wafer is temporarily crimped on the packaged body through the bonding material, and the cover film is interposed between the semiconductor wafer and the thermal compression bonding tool, and the press is temporarily pressed. The semiconductor chip is packaged in the packaged body by connecting the semiconductor chip. 一種封裝方法,經由接著材料將半導體晶片封裝於被封裝體,且其特徵在於包含:準備步驟,準備封裝裝置,所述封裝裝置包括封裝頭、工具加熱冷卻機構及膜配置機構,所述封裝頭保持所述半導體晶片,並且於相對於所述被封裝體接近或遠離的方向移動,於頂端安裝有將所述半導體晶片按壓於所述被封裝體的熱壓接工具,所述工具加熱冷卻機構安裝於所述封裝頭,進行所述熱壓接工具的加熱和冷卻,所述膜配置機構將蓋膜配置於所述半導體晶片與所述熱壓接工具之間;膜配置步驟,於將所述半導體晶片封裝於所述被封裝體時,藉由所述膜配置機構使所述蓋膜介於所述半導體晶片與所述熱壓接工具之間;封裝步驟,於所述蓋膜介於所述半導體晶片與所述熱壓接工 具之間的狀態下,將所述半導體晶片按壓於所述被封裝體,並且將所述熱壓接工具加熱後加以冷卻,將所述半導體晶片封裝於所述被封裝體;以及剝離步驟,於所述封裝步驟之後,將所述熱壓接工具加熱以減小所述熱壓接工具與所述蓋膜之間的貼附力後,使所述封裝頭上升而自所述蓋膜剝離。 A packaging method, packaging a semiconductor chip into a packaged body via an adhesive material, and is characterized in that it includes: a preparation step, preparing a packaging device, the packaging device includes a packaging head, a tool heating and cooling mechanism, and a film configuration mechanism, the packaging head The semiconductor wafer is held and moved in the direction of approaching or moving away from the packaged body, and a thermocompression bonding tool that presses the semiconductor wafer to the packaged body is installed on the top, and the tool heating and cooling mechanism Installed on the encapsulation head to heat and cool the thermocompression bonding tool, the film disposition mechanism disposes the cover film between the semiconductor wafer and the thermocompression bonding tool; in the film disposition step, the When the semiconductor chip is packaged in the packaged body, the cover film is interposed between the semiconductor chip and the thermocompression bonding tool by the film arrangement mechanism; in the packaging step, when the cover film is interposed The semiconductor wafer and the thermocompression bonder In the state between the tools, press the semiconductor chip on the packaged body, and heat and cool the thermocompression bonding tool, and package the semiconductor chip in the packaged body; and the peeling step, After the encapsulation step, heating the thermocompression bonding tool to reduce the adhesive force between the thermocompression bonding tool and the cover film, and then lifting the encapsulation head to peel off the cover film .
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