TW202139273A - Manufacturing method of chip bonding device, stripping jig and semiconductor device characterized by reducing chip cracks and defects during pickup period - Google Patents

Abstract

Provided is a chip bonding device capable of reducing chip cracks and defects during pickup period. [Solution] A chip bonding device is equipped with a stripping unit that strips the chip adhered to the dicing tape formed by a temperature-sensitive adhesive sheet. The stripping unit in the cylindrical dome is equipped with: a square block abutted against the portion of the dicing tape where the chip to be stripped off is attached; a dome plate located at the outer periphery away from the square block and abutted against the portion of the dicing tape where the chip to be stripped off is not attached; and a heat processing device that sets the square block to the temperature at which the dicing tape is stripped from the chip to be stripped.

Description

Wafer bonding device, peeling jig and manufacturing method of semiconductor device

The present disclosure relates to a wafer bonding device, for example, a wafer bonding device that can be applied to pick up a wafer attached to a heating type release sheet.

A semiconductor wafer (hereinafter, referred to as a wafer), for example, is mounted on a wafer bonder on the surface of a wiring board, a lead frame, etc. (hereinafter, collectively referred to as a substrate), and the wafer is transferred to the substrate with a suction nozzle such as a collector, and applied This action (work) of bonding by heating the bonding material while pressing the pressure is repeated.

Among the die bonding processes performed by die bonding devices such as die bonders, there is a peeling process of peeling a divided wafer from a semiconductor wafer (hereinafter, referred to as a wafer) to which an adhesive tape, which is a dicing tape, is attached. In the peeling process, the wafer is lifted up from the inside of the dicing tape with the push-up pins and squares, and the dicing tape held in the wafer supply part is peeled off one by one, and then transferred to the substrate using a suction nozzle such as a collector.

In recent years, for the purpose of promoting high-density mounting of semiconductor devices, multilayer packages that three-dimensionally mount a plurality of chips on a wiring board have been put into practical use, but when assembling such a multilayer package, the thickness is processed to Wafers thin on the order of tens of μm. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2012-4393 A

[The problem to be solved by the invention]

However, if the chip is thinner, the rigidity of the chip will be extremely low compared to the adhesive force of the dicing tape. Therefore, in the assembly process of a package using a thin chip, when peeling from the adhesive tape and picking up the chip divided by dicing, cracks and defects are likely to occur in the chip.

The subject of the present disclosure is to provide a wafer bonding device that can reduce chip cracks and defects during pick-up. [Means to Solve the Problem]

A brief description of the representative in this disclosure is as follows. That is, the wafer bonding apparatus includes a peeling unit that peels a wafer attached to a dicing tape formed with a heat-peelable pressure-sensitive adhesive sheet. The peeling unit is provided in the cylindrical dome: a square that abuts on the part of the dicing tape where the wafer to be peeled is attached, and a square that abuts on the part of the dicing tape where the wafer to be peeled is not attached The dome plate, a heat treatment device that heats the square to a temperature at which the dicing tape is peeled from the wafer to be peeled, a temperature sensor that measures the temperature of the heating device, and a cooling part that cools the dome plate. [Effects of the invention]

According to the present disclosure, chip cracks and defects can be reduced.

Hereinafter, the embodiment will be explained using drawings. However, in the following description, the same constituent elements may be assigned the same symbols to omit overlapping descriptions. In addition, in order to make the description clearer, the drawings may schematically show the width, thickness, shape, etc. of each part compared with the actual state, but this is only an example and does not limit the interpretation of the present invention.

Fig. 1 is a schematic plan view showing the wafer bonder of the embodiment. Fig. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.

The wafer bonder 10 roughly includes a wafer supply unit 1, a pick-up unit 2, an intermediate stage unit 3, a bonding unit 4, a conveying unit 5, a substrate supply unit 6, and a substrate unloading unit 7, which supply the wafer D mounted on the substrate S. The control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the wafer bonder 10, and the X-axis direction is the left-right direction. The wafer supply part 1 is arranged on the front side of the wafer bonder 10, and the bonding part 4 is arranged on the inside. Among them, one or a plurality of product regions (hereinafter referred to as package regions P) that will be the final package is printed on the substrate S.

First, the wafer supply unit 1 supplies the wafer D mounted on the packaging area P of the substrate S. The wafer supply unit 1 includes a wafer holding table 12 that holds a wafer 11 and a peeling unit 13 that peels the wafer D from the wafer 11 and is indicated by a broken line. The wafer supply unit 1 is moved in the XY axis direction by a driving means not shown in the figure to move the wafer D to be picked up to the position of the peeling unit 13.

The pickup unit 2 has a pickup head 21 that picks up the wafer D, a Y drive portion 23 of the pickup head that moves the pickup head 21 in the Y-axis direction, and lifts, rotates, and moves the collector 22 in the X-axis direction (not shown). Drive section. The pickup head 21 has a collector 22 (also refer to FIG. 2) that sucks and holds the peeled wafer D at the front end, picks up the wafer D from the wafer supply unit 1 and places it on the intermediate stage 31. The pickup head 21 has driving units (not shown) for raising, lowering, rotating, and moving the collector 22 in the X-axis direction.

The intermediate stage portion 3 includes an intermediate stage 31 on which the wafer D is temporarily placed, and a stage recognition camera 32 for recognizing the wafer D on the intermediate stage 31.

The bonding part 4 picks up the wafer D from the intermediate stage 31 and bonds it to the packaging area P of the substrate S that has been transferred, or to laminate it on the packaging area P of the substrate S. The bonding part 4 has a collector 42 (also refer to FIG. 2) that sucks and holds the wafer D at the tip like the pickup head 21, a bonding head 41, a Y driving part 43 that moves the bonding head 41 in the Y-axis direction, and an imaging substrate S. A position identification mark (not shown in the figure) of the package area P, and a substrate identification camera 44 for identifying the bonding position. With this structure, the bonding head 41 corrects the pickup position/posture based on the imaging data of the stage recognition camera 32, picks up the wafer D from the intermediate stage 31, and bonds the wafer D to the substrate based on the imaging data of the substrate recognition camera 44.

The conveying section 5 has a substrate conveying claw 51 for grasping and conveying the substrate S, and a conveying lane 52 for moving the substrate S. The substrate S is moved by driving a nut (not shown) provided on the substrate transfer claw 51 of the transfer lane 52 along a ball screw (not shown) provided on the transfer lane 52. With this structure, the substrate S is moved from the substrate supply part 6 to the joining position along the conveyance lane 52, and after joining, it moves to the substrate carrying-out part 7 and the substrate S is transferred to the carrying-out part 7.

The control unit 8 is provided with a memory storing a program (software) that monitors the operation of each part of the wafer bonder 10 and controlling the operation, and a central processing unit (CPU) that executes the program stored in the memory.

Next, the structure of the wafer supply unit 1 will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing the main part of the wafer supply unit of FIG. 1. FIG.

The wafer supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY axis direction), and a peeling unit 13 that moves in the vertical direction. The wafer holding table 12 has an expansion ring 15 holding the wafer ring 14 and a support ring 17 holding the wafer ring 14 and positioning the dicing tape 16 for bonding a plurality of wafers D horizontally. The peeling unit 13 is arranged inside the support ring 17.

The wafer supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the wafer D is lifted up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched, and the interval between the wafers D is expanded, and the wafer D is peeled from the dicing tape 16 by the peeling unit 13, so that the pick-up of the wafer D is improved. In addition, the adhesive for bonding the wafer to the substrate changes from a liquid state to a film shape, and a film-like adhesive material called a die-attach film (DAF) 18 is stuck between the wafer 11 and the dicing tape 16. In the wafer 11 with the die-attach film 18, the wafer 11 and the die-attach film 18 are cut. Therefore, in the peeling process, the wafer 11 and the die bonding film 18 are peeled from the dicing tape 16. In addition, afterwards, the peeling process is explained ignoring the existence of the die-bonding film 18.

As the dicing tape 16, a high-temperature peelable adhesive sheet whose adhesive force disappears above a set temperature or a low-temperature peelable adhesive sheet whose adhesive force disappears below a set temperature is used. Among them, the high-temperature peelable adhesive sheet and the low-temperature peelable adhesive sheet are called temperature-sensitive adhesive sheets. As the dicing tape 16, for example, a thermally peelable sheet (high-temperature peelable adhesive sheet) that has adhesive strength at room temperature and peels off after heating is used. As the heat-releasing sheet, for example, a heat-releasing mold adhesive sheet (trade name "REVAALPHA" (registered trademark), "REVACLEAN" with a heat-expandable layer containing a foaming agent such as heat-expandable microspheres is used; above, Nitto Denko Co., Ltd. system). For example, the 90°C aspect of "REVAALPHA" is peeled from a substrate or the like by heating it on a hot plate at 100 to 120°C for 1 minute. That is, when heating with a hot plate, in order to set the surface temperature of the high-temperature peelable adhesive sheet (the temperature of the interface with the die bond film 18) as the peeling temperature, there is a case where the temperature of the hot plate is set slightly higher than the peeling temperature. necessary. In addition, when a high-temperature peelable adhesive sheet is used, it is preferable to perform peeling at a temperature lower than the curing temperature of the die bond film 18 (usually 150° C.). In addition, the hardening of the die-bonding film 18 is to apply the specified temperature for a long time (about 1 hour). When the heating time of the high-temperature peelable adhesive sheet is short, the peeling temperature of the high-temperature peelable adhesive sheet is the same as that of the die-bonding film 18 The curing temperature may be the same. For the dicing tape 16, it is preferable to use a base material thinner than a normal thickness (about 100 μm). The thickness of the dicing tape 16 is, for example, 50 to 80 μm. Thereby, it is possible to increase the followability to the block at the time of suction.

Next, the structure of the peeling jig will be described using FIGS. 4 and 5. Fig. 4 is a plan view of the peeling jig of Fig. 3. Fig. 5 is an A-A cross-sectional view of the peeling jig of Fig. 4.

The peeling unit 13 generally includes a peeling jig 101 and a driving mechanism (not shown) for raising and lowering the peeling jig 101. As shown in FIG. 4, the peeling jig 101 has a block 102 that heats the dicing tape 16, a heater 103 that heats the block 102, a temperature sensor 104 that measures the temperature of the heater 103, a cooling part 105, and a first suction part. 106, a second suction part 107, a driving part (not shown) that raises and lowers the block 102, a cylindrical dome 108 that holds the block 102, and a dome plate 109 that covers the dome 108. The peeling jig 101 has a size of about 83 mm in height and about 32 mm in diameter, for example.

The block 102 is integrated into the center of the upper part of the peeling jig 101. The square 102 is viewed as a rectangle in the plane, and has almost the same shape as the plane of the wafer D and has the same size. In addition, the block 102 is formed of a material with good thermal conductivity such as aluminum nitride, for example. The block 102 includes a plurality of suction ports 102a penetrating in the vertical direction, and the suction ports 102a communicate with the cavity 106a of the first suction portion 106 provided below. The cavity 106a communicates with the pipe 106b, and is connected to a vacuum pump as a decompression device not shown in the figure. When the inside of each of the suction ports 102a is raised so that the upper surface of the peeling jig 101 is brought into contact with the inside of the dicing tape 16, the pressure is reduced by a vacuum pump, and the inside of the dicing tape 16 at the part where the target wafer is picked up is adhered to the square 102 Above. The suction port 102a and the first suction portion 106 (cavity 106a, tube 106b) constitute a first vacuum path.

Abutting on the lower surface of the block 102, a heater 103 as a heat treatment device is provided. In addition, the heater 103 is provided with a temperature sensor 104, and as the heater 103, the temperature control of the block 102 can be performed, and the block 102 can be heated to an arbitrary temperature.

The dome plate 109 has an opening that allows the block 102 to move up and down, and a plurality of grooves 109b connecting the plurality of suction openings 109a and the plurality of suction openings 109a are provided on the periphery of the dome plate 109. The suction port 109a communicates with the cavity 107a of the second suction part 107 provided below. The cavity 107a forms a ring around the square 102. The cavity 107a communicates with the tube 107b, and is connected to the aforementioned vacuum pump. When the inside of each of the suction port 109a and the groove 109b is raised so that the upper surface of the peeling jig 101 is brought into contact with the inside of the dicing tape 16, the pressure is reduced by the vacuum pump to pick up the inside of the dicing tape 16 at a location other than the target wafer It is densely attached to the top of the dome plate 109. The suction port 109a and the second suction part 107 (cavity 107a, tube 107b) constitute a second vacuum path. The second vacuum path and the first vacuum path are formed independently. That is, the second vacuum path can perform vacuum suction at a different time point from the first vacuum path, or perform vacuum suction at the same time point.

The cooling part 105 is composed of a cavity 105a provided below the cavity 107a via a wall and annularly provided around the block 102, and a pipe 105b communicating with the cavity 105a. The pipe 105b is connected to a cooling gas supply device not shown. The cooling gas supplied to the cavity 105a is discharged to the outside of the cooling part 105 from an exhaust hole (not shown) provided in the wall forming the cavity 105a. Thereby, it is possible to prevent the peripheral wafer from heating due to the increase in the temperature of the dome plate 109 caused by the heat from the block 102. The outer diameters of the tubes 105b, 106b, and 107b are, for example, about 2.5 mm.

In order to prevent heating of peripheral wafers accompanying the increase in the temperature of the dome plate 109 caused by the heat from the block 102, a gap G is provided between the block 102 and the dome plate 109, and air insulation is performed. The width of the gap G is, for example, about 0.5 mm.

The height of the upper surface of the block 102 is lower than the height of the upper surface of the peeling jig 101 (dome plate 109) in the initial state (when the block 102 is not operating).

Next, using the peeling jig 101 provided with the above-mentioned square 102, the method of peeling the wafer D from the dicing tape 16 is demonstrated using FIG. 6. FIG. Fig. 6 is a timing chart showing the peeling sequence.

(step 1) First, the control unit 8 lowers the expansion ring 15 of the wafer holding table 12 to press the wafer ring 14 adhered to the peripheral portion of the dicing tape 16 downward. In this way, the dicing tape 16 receives strong tension from the center to the periphery, and is stretched without slackening in the horizontal direction, and the gap between the wafers D is enlarged.

(Step 2) Next, the control unit 8, as shown in FIG. 3, makes the center portion (block 102) of the peeling jig 101 located directly below the wafer D (the wafer D located in the center portion of the same figure) to be peeled off. The wafer holding table 12 moves, and the collector 22 moves above the wafer D. On the bottom surface of the collector 22 supported by the pickup head 21, a suction port (not shown) whose internal pressure is reduced is provided, so that only one wafer D to be peeled can be selectively suctioned and held.

(Step 3: STP3) Next, the control unit 8 sets the upper surface of the block 102 to a slightly lowered state than the upper surface of the dome plate 109 (initial state), and raises the peeling jig 101 so that the upper surface contacts the dicing tape 16 Inside, the suction port 109a of the dome plate 109 and the inside of the groove 109b are decompressed. Thereby, the dicing tape 16 below the other wafer D adjacent to the wafer D to be the target of peeling adheres to the dome plate 109. Simultaneously with this, the control unit 8 slowly lowers the pickup head 21, and the collector 22 stops descending after reaching a predetermined height from the wafer D. In addition, the control unit 8 heats the surface temperature of the block 102 to the preheating temperature by the heater 103. The preheating temperature (T _p ) is the temperature at which the dicing tape 16 is not peeled from the wafer D, and is a temperature higher than the normal temperature where heating is not performed, for example, 60°C. After that, the heater 103 starts heating so that the surface temperature of the block 102 becomes the heating target temperature (T _{h ).} The heating target temperature (T _h ) is, for example, 120°C. A heating temperature sensor 104 does not exceed the upper limit temperature (T _H) feedback control manner. The heating upper limit temperature (T _h ) is, for example, 130°C. Heating upper limit temperature (T _H), the heating target temperature (T _h), the preheating temperature (T _p) are characterized by the dicing tape are changed.

(Step 4: STP4) After the heating time (th), when the surface temperature of the block 102 rises to the heating target temperature, the control unit 8 raises the block 102 to the same height as the upper surface of the dome plate 109 and depressurizes the inside of the suction port 102a of the block 102. Thereby, the dicing tape 16 below the wafer D to be peeled is closely adhered to the upper surface of the block 102, and the dicing tape 16 is heated. After the block 102 rises to a predetermined height, after a predetermined time has elapsed, the control unit 8 slowly lowers the pickup head 21, and the collector 22 stops descending after reaching the height of the wafer D. The control unit 8 uses the heater 103 to heat the block 102 at a predetermined temperature for a predetermined time.

(Step 5: STP5) After that, the control unit 8 stops the heating of the block 102 by the heater 103, and sucks the wafer D through the suction port of the collector 22 to slowly raise the pickup head 21. After the collector 22 is raised to a predetermined height from the upper surface of the dome plate 109, the control unit 8 switches the raising speed to a high speed to raise it.

(Step 6: STP6) After the collector 22 of the pickup head 21 reaches a predetermined height (allowing height for descending) from the top of the dome plate 109, the control unit 8 lowers the block 102 and stops the suction by the suction port 102a of the block 102 and the suction of the dome plate 109 Adsorption caused by 口109a.

Next, a method of manufacturing a semiconductor device using the wafer bonder of the embodiment will be described using FIG. 7. Fig. 7 is a flowchart showing a method of manufacturing a semiconductor device using the wafer bonder of Fig. 1.

(Wafer/substrate transfer process: step S11) The wafer ring 14 holding the dicing tape 16 to which the wafer D divided from the wafer 11 is attached is stored in a wafer cassette (not shown), and the wafer bonder 10 is loaded. The control unit 8 supplies the wafer ring 14 to the wafer supply unit 1 from the wafer cassette filled with the wafer ring 14. In addition, the substrate S is prepared and loaded into the wafer bonder 10. The control unit 8 mounts the substrate S to the substrate transport claw 51 through the substrate supply unit 6.

(Pick up process: step S12) The control unit 8 peels the wafer D as described above, and picks up the peeled wafer D from the wafer 11. Thereby, the wafer D peeled from the dicing tape 16 together with the die attach film 18 is attracted|sucked and held by the collector 22, and is conveyed to the next process (step S13). Next, after the wafer D is transferred to the collector 22 of the sub-process and returned to the wafer supply unit 1, the next wafer D is peeled from the dicing tape 16 in the above order, and then the wafer D is removed from the dicing tape 16 in the same order. A stripping.

(Joining process: step S13) The control unit 8 mounts the picked up wafer on the substrate S or stacks it on the bonded wafer. The control unit 8 places the wafer D picked up from the wafer 11 on the intermediate stage 31, and again picks up the wafer D from the intermediate stage 31 by the bonding head 41, and bonds it to the transferred substrate S.

(Board unloading process: step S14) The control unit 8 takes out the substrate S to which the wafer D is bonded from the substrate transfer claw 51 by the substrate transfer unit 7. The substrate S is carried out from the wafer bonder 10.

As described above, the wafer D is mounted on the substrate S by the die bonding film 18, and is carried out from the wafer bonder. After that, it was electrically connected to the electrode of the substrate S via the Au wire by a wire bonding process. Next, the substrate S on which the wafer D is mounted is carried into the die bonder. The second wafer D is layered on the wafer D mounted on the substrate S by the die-bonding film 18, and after it is removed from the die bonder, it is bonded by wire The process is electrically connected to the electrodes of the substrate S via Au leads. After the second wafer D is peeled from the dicing tape 16 by the aforementioned method, it is transported to the particle addition process to be laminated on the wafer D. After repeating the above process for a predetermined number of times, the substrate S is transported to the mold process, and a plurality of chips D and Au leads are packaged with mold resin (not shown) to complete the laminate package.

According to the embodiment, there are one or more of the following effects. (1) By heating a block whose outer shape matches the wafer size, it is possible to reduce heat conduction to the wafer (peripheral wafer) located in the periphery of the wafer to be picked up (peeling target wafer) and the dicing tape under the peripheral wafer. Thereby, the peripheral wafers are prevented from becoming easy to peel off, and the risk of breakage can be reduced. (2) By cooling the dome plate, the heat conduction to the peripheral wafer and the dicing tape under the peripheral wafer can be further reduced. (3) Because the dicing tape is wrapped and heating is performed from the opposite side of the wafer, excess heat can not be transmitted to the surface of the wafer. (4) With the independent driving of the dome plate and the square, the outer periphery of the peeling target wafer can be maintained without heating the peeling target wafer, and the peeling target wafer can be accurately aligned. (5) Because the block is not raised to be higher than the wafer board, it can be picked up with low stress. In this way, chip cracks and defects can be reduced.

As described above, when a plurality of wafers are assembled on a substrate in a three-dimensionally mounted laminate package, in order to prevent an increase in the thickness of the package, the thickness of the wafer is required to be as thin as 20 μm or less. On the other hand, since the thickness of the dicing tape is about 100 μm, the thickness of the dicing tape also becomes 4 to 5 times the thickness of the wafer. If the chip is thinner, the rigidity of the chip will be extremely low compared to the adhesive force of the dicing tape. Therefore, for example, to pick up a thin wafer of 20 μm or less, it is necessary to reduce the stress applied to the wafer (lower stress). If such a thin wafer is to be peeled from the dicing tape, the deformation of the wafer following the deformation of the dicing tape becomes more noticeable and easy to occur. However, the wafer bonder of this embodiment can reduce the wafer picking up from the dicing tape. damage.

<Modifications> Hereinafter, a few are exemplified as examples of representative modification examples of the embodiment. In the description of the following modification examples, the same reference numerals as in the above-mentioned embodiment will be used for the same structure and function as those described in the above-mentioned embodiment. Next, regarding the description of the relevant part, the description in the above-mentioned embodiment will be appropriately used to the extent that there is no technical contradiction. In addition, part of the above-mentioned embodiment and all or part of the plural modified examples may be suitably and compositely applied within the scope of no technical contradiction.

(First modification) The peeling jig related to the first modification will be described with reference to FIG. 8. Fig. 8 is a cross-sectional view of a peeling jig according to a first modification.

The peeling jig 201 of the first modified example replaces the heater 103 and the cooling part 105 of the embodiment, and is provided with a semiconductor cooling and heating element that generates a temperature difference by circulating an electric current formed in a loop between the block 102 and the dome plate 109的thermoelectric element 210. Among them, the thermoelectric element 210 is a heat treatment device and also a cooling part. The upper surface of the thermoelectric element 210 as the cooling surface is brought into contact with the dome plate 109, and the lower surface as the heat dissipation surface is brought into contact with the block 102. Wherein, the lower surface of the thermoelectric element 210 is fixed on the flat surface of the block 102 located below the cavity 107a of the second suction portion 107, and the upper surface of the thermoelectric element 210 and the second suction portion 107 are formed by raising the block 102. The lower surface of the wall of the cavity 107a abuts better. Thereby, before the block 102 and the dicing tape 106 abut, the block 102 can be heated.

With the above configuration, the thermoelectric element 210 can cool the dome plate 109 and heat the block 102. In addition, no cooling gas supply device or the like is required, and the heating of the top block can utilize the heat generated by the thermoelectric element 210, which is compact and can also improve energy efficiency.

In addition, it is necessary to set the temperature of the block 102 to a higher temperature. When the heating temperature of the thermoelectric element 210 is insufficient, the heater 103 provided in the embodiment may be used to heat the block 102 to the processing temperature. In addition, when using a low-temperature peelable dicing tape, by controlling the polarity of the supply current of the wiring 210a and 210b of the thermoelectric element 210 to be reversed, the cooling of the block 102 and the heating of the dome plate 109 can also be performed similarly.

(Second modification) The peeling jig related to the second modification will be described with reference to FIG. 9. Fig. 9 is a cross-sectional view of a peeling jig according to a second modification.

The peeling jig 301 of the second modification example replaces the heater 103 of the embodiment, and includes an infrared lamp 320 as a heat treatment device in a block 302. In addition, the peeling jig 301 does not include the cooling part 105 and the first suction part 106 of the embodiment. In addition, the block 302 has an opening 302a corresponding to the shape of the wafer D, and the infrared light 320 does not directly heat the dicing tape 16 by the block 302. Thereby, the part of the dicing tape 16 below the picked-up wafer D can be selectively heated, and the wafer D can be peeled from the dicing tape 16 like the embodiment.

The inner surface of the square 302 of the built-in infrared lamp 320 may be coated with the reflective material 302b by gold plating and aluminum vapor deposition with high infrared light reflectivity. In this way, infrared rays can be more efficiently guided to the part under the wafer peeled off in the dicing tape 16.

In addition, the opening 302a of the block 302 may be provided with a plate 302c formed of a material with high infrared light transmittance such as quartz glass. Thereby, the flatness of the wafer D is maintained, and the pick-up at the collector 22 becomes easier.

(Third modification) The peeling jig related to the third modification will be described with reference to FIG. 10. Fig. 10 is a cross-sectional view of a peeling jig according to a third modification.

In the third modification, instead of the infrared lamp of the second modification, a laser irradiation unit 430 capable of arbitrarily changing the irradiation area and size is provided. The laser irradiation unit 430 as a heat treatment device has a condensing lens unit 430a, and, like the infrared lamp 320 of the second modification, directly heats the dicing tape 16 without passing through the block 402. Although the laser irradiation unit 430 is arranged inside the block 402, the laser light source not shown in the figure is arranged outside, and is introduced into the laser irradiation unit 430 through an optical fiber 430b or the like. Thereby, it is possible to selectively irradiate the laser light to the part of the dicing tape 16 below the picked-up wafer D, and it is possible to peel the wafer D from the dicing tape 16 as in the embodiment.

The above-mentioned laser light source and laser irradiation unit 430 can arbitrarily change the size of the laser light and the irradiation time. When changing the processing conditions of the size of the wafer as a semiconductor product or the processing temperature, it can be freely changed by the program, so that the peeling can be freely changed. The exchange of jigs is kept to a minimum. In addition, since the laser light can concentrate its energy on the irradiation area only, the temperature rise of the dome plate 109 and the like outside the irradiation area can be suppressed to a minimum.

In addition, as in the second modification, a plate 402c formed of a material having a high transmittance of laser light used for quartz glass or the like may be provided in the opening 402a of the block 402. Thereby, the flatness of the wafer D is maintained, and the pick-up at the collector 22 becomes easier.

(Fourth modification to seventh modification) In the embodiment, the suction port 102a provided in the block 102 is arranged at the center in a plan view. In the fourth modification to the seventh modification, in addition to the central portion, at least four corners of the quadrangle formed on the upper surface of the block 102a, that is, the area outside of the imaginary circle or ellipse inscribed on the four sides of the square Set up the suction port.

The peeling jig related to the fourth modification example to the seventh modification example will be described with reference to FIG. 11. Fig. 11 is a diagram illustrating a peeling jig from a fourth modification to a seventh modification. Fig. 11(a) is a plan view of a block of a peeling jig according to a fourth modification. Fig. 11(b) is a plan view of a block of a peeling jig according to a fifth modification. Fig. 11(c) is a plan view of a block of a peeling jig according to a sixth modification. Fig. 11(d) is a plan view of a block of a peeling jig according to a seventh modification.

In the fourth modification to the seventh modification, the block 102 in the embodiment changes the number, arrangement, or diameter of the plurality of suction ports 102a penetrating in the vertical direction, so that the dicing tape 16 under the wafer D is sucked more uniformly and more uniformly heating.

As shown in FIG. 11(a), in the fourth modification, four suction ports 102a are provided in the center of the block 102 and one suction port 102a is provided in each. As in the embodiment, the suction effect of the outer peripheral part can be expected more than the suction port 102a is provided only in the center. However, the diameter of the suction port 102a is 0.8 mm, for example.

As shown in FIG. 11(b), in the fifth modification, the suction port 102a is arranged on the entire surface of the block 102. By uniformly adsorbing the entire wafer D, uniform heating can be achieved. Here, the pitch (PT) of the suction port 102a is, for example, 2 mm. The diameter of the suction port 102a on the outermost periphery is, for example, 0.6 to 0.8 mm, and the diameter of the suction port 102a on the inner side is, for example, 0.8 mm. In addition, the distance (thickness W) between the suction port 102a on the outermost periphery and the end of the block 102 is about 0.5 mm, for example.

As shown in FIG. 11(c), in the sixth modification, a block 102 is provided with a plurality of suction ports 102a and a plurality of grooves 102c connected to the plurality of suction ports 102a. By providing the groove 102c, the gap between the suction ports 102a can be compensated.

As shown in FIG. 11(d), in the seventh modification, a block 102 is formed by a central portion 102d formed of porous metal and a frame portion 102e surrounding the outer periphery of the central portion 102d. Suction is performed from the air hole 102f formed in the central portion 102d. The frame portion 102e prevents leakage from the side surface of the central portion 102d. It can ensure the bonding area with the chip for full adsorption.

As mentioned above, although the disclosure made by the present inventors has been specifically described based on the embodiment and the modified example, the present disclosure is not limited to the above-mentioned embodiment and the modified example, and various modifications can be made.

For example, in the embodiment, although the height of the wafer picked up by the collector is set to the height of the wafer surface, the height of the wafer surface after foaming with dicing tape may be used to stand by. Can. It is also possible to install a sensor on the pick-up head, and to use the sensor to keep the press-in load at a certain level and perform immediate control.

In addition, in the embodiment, although an example is described in which the block is heated at the preheating temperature (T _p ) in advance, the preheating is not performed and the block may be heated to the heating target temperature (T _h ).

In addition, in the embodiment, the temperature of the block is measured by the temperature sensor of the heater provided in the block, but it is not limited to this. Infrared light radiation temperature sensor etc. are installed to directly measure the heated wafer and the heating peeling type. The dicing tape formed by the adhesive sheet is also acceptable.

In addition, in the embodiment, although the example of supplying the cooling gas to the cavity of the cooling part is described, it is sufficient to supply the cooling liquid. At this time, the cooling liquid is recovered by a pipe or the like.

In addition, in the embodiment, although an example of using a high-temperature releasable adhesive tape as a dicing tape is described, a low-temperature releasable adhesive tape may be used. At this time, the heat treatment of the heater 103 and the cooling part 105 is exchanged, a cooling part is provided below the block 102, and a heating part is provided below the dome plate.

In addition, in the embodiment, although an example in which the block is brought into contact with the wafer during heating is described, the block may not be brought into contact with the wafer during heating. This can prevent heat from escaping to the collector due to heat transfer from the wafer.

In addition, in the third modification, although the opening 402a of the block 402 is provided with a plate 402c formed of a material with high laser light transmittance, the block is covered by a plate formed of a material that absorbs laser light and generates heat. The opening 402a of 402 may be irradiated with laser light to heat the heating plate to indirectly heat the dicing tape. At this time, it is preferable to provide the same suction port as the suction port 102a of the embodiment on the plate, and to provide the same suction portion as the first suction portion 106 of the embodiment below the suction port.

In addition, in the embodiment, although the wafer D on the dicing tape 16 is vacuum (reduced) suction and fixed by the suction port provided in the block 102, it is not limited to this. For example, an electrostatic suction clamp with a heater function is used. The disk constitutes a square, and the dicing tape 16 under the wafer D may also be sucked. As a result, the block does not require suction ports and grooves for vacuum suction, and can be heated more uniformly.

In addition, in the embodiment, although an example of using a die-attach film is described, it is not necessary to use the die-attach film if it is provided on the preform part where the adhesive is applied on the substrate.

In addition, in the embodiment, the wafer bonder that picks up the wafer from the wafer supply unit with the pick-up head and places it on the intermediate stage, and bonds the wafer placed on the intermediate stage to the substrate with the bond head is described, but It is not limited to this, and it can also be applied to the semiconductor manufacturing apparatus which picks up a wafer from a wafer supply part.

For example, it can also be applied to a wafer bonder that does not have an intermediate stage and a pick-up head, but bonds the wafer of the wafer supply part to the substrate with a bond head. At this time, when the positional deviation between the collector and the wafer occurs, the positional deviation of the wafer can be recognized by a monitoring camera or the like to perform bonding correction.

In addition, it is also applicable to a flip chip bonder that does not have an intermediate stage, but picks up a wafer from a wafer supply part and rotates the wafer pickup head upward to transfer the wafer to the bonding head and bond it to the substrate by the bonding head.

In addition, it can also be applied to a wafer sorting machine that does not have an intermediate stage and a bonding head, and mounts the picked up wafers on a carrier or the like from the wafer supply part with the pickup head.

10: Wafer adapter 12: Wafer holding table 13: Stripping unit 101: Stripping fixture 102: Block 103: Heater (heat treatment device) 108: dome 109: dome board 16: cutting tape 21: Pickup head D: chip

[Fig. 1] A schematic plan view showing the wafer bonder of the embodiment. [Fig. 2] A diagram explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1. [Fig. [Fig. 3] A schematic cross-sectional view showing the main part of the wafer supply unit in Fig. 1. [Fig. [Fig. 4] A plan view illustrating the peeling jig of Fig. 3. [Fig. [Fig. 5] A-A cross-sectional view of the peeling jig of Fig. 4. [Fig. [Fig. 6] A timing chart showing the peeling sequence. [Fig. 7] A flowchart illustrating a method of manufacturing a semiconductor device using the wafer bonder of Fig. 1. [Fig. [Fig. 8] A cross-sectional view of the peeling jig of the first modification. [Fig. 9] A cross-sectional view of the peeling jig of the second modification. [Fig. 10] A cross-sectional view of a peeling jig of a third modification example. [Fig. 11] A diagram illustrating the peeling jig from the fourth modification to the seventh modification.

101: Stripping fixture

102: Block

102a: suction port

103: Heater (heat treatment device)

104: temperature sensor

105: Cooling part

105a: Hollow

105b: tube

106: First Attraction

106a: Hollow

106b: tube

107: The second attraction

107a: Hollow

107b: tube

108: dome

109: dome board

109a: suction mouth

100b: groove

G: gap

Claims (29)

A wafer bonding device is provided with: a wafer holding table for holding a dicing tape formed by a temperature-sensitive adhesive sheet; A peeling unit that peels off the wafer attached to the aforementioned dicing tape; Pick up the head of the wafer peeled from the aforementioned dicing tape; in, The aforementioned peeling unit is provided in a cylindrical dome: A square that abuts on the part of the dicing tape where the wafer to be peeled is attached; A dome plate located on the outer periphery away from the aforementioned square and abutting on the part of the aforementioned dicing tape where the wafer to be peeled is not attached; A heat treatment device that sets the dicing tape to a temperature at which the wafer to be peeled is peeled off. The wafer bonding device of claim 1, wherein It is further equipped with: a cooling part for cooling the aforementioned dome plate; The aforementioned heat treatment device is a heater that heats the aforementioned block; The aforementioned cooling unit includes: The cavity provided under the aforementioned dome plate; Cooling gas is supplied and connected to the aforementioned hollow tube. The wafer bonding device of claim 1, wherein It is further equipped with: a cooling part with a semiconductor cooling and heating element arranged under the aforementioned dome plate; The dome plate is cooled by the cooling surface of the semiconductor cooling and heating element. The wafer bonding device of claim 3, wherein: The block is heated by the heat-radiating surface of the semiconductor cooling and heating element. The wafer bonding device of claim 1, wherein The heat treatment device is an infrared lamp provided inside the block, and the infrared lamp irradiates heat to the dicing tape through an opening provided in the block. The wafer bonding device of claim 5, wherein: The aforementioned opening of the aforementioned square is covered by a surface plate formed of a material that transmits infrared light. The wafer bonding device of claim 1, wherein The heat treatment device is a unit for irradiating laser light provided inside the block, and the unit irradiates the dicing tape with laser light through an opening provided in the block. The wafer bonding device of claim 7, wherein The opening of the square is covered by a surface plate formed of a material that transmits the laser light. The wafer bonding device of claim 7, wherein The opening of the square is covered with a surface plate formed of a material that absorbs the laser light and generates heat, and the laser light is irradiated to heat the surface plate and indirectly heat the dicing tape. The wafer bonding device according to any one of claims 1 to 4, wherein: The aforementioned peeling unit is also equipped with: The first vacuum path for decompressing the suction port of the aforementioned box; Independent from the first vacuum path, the second vacuum path decompresses the suction port of the dome plate. The wafer bonding device according to any one of claims 1 to 9, wherein: More equipped: control department; The control unit heats the block to a first predetermined temperature by the heat treatment device, and in a state where the upper surface of the block is lower than the upper surface of the dome plate, the dicing tape is passed through the dome plate. Suction port adsorption. The wafer bonding device of claim 11, wherein: The control unit heats the block to a second predetermined temperature by the heat treatment device, and causes the upper surface of the block to abut the dicing tape to be sucked by the suction port of the block. The wafer bonding device of claim 12, wherein: The control unit sets the second predetermined temperature to a temperature higher than the first predetermined temperature. The wafer bonding device of claim 12, wherein: The control unit sets the second predetermined temperature to the same temperature as the first predetermined temperature. The wafer bonding device of claim 13, wherein The control unit picks up the wafer to be peeled from the heated dicing tape by the head. The wafer bonding device of claim 1, wherein The shape of the square in plan view corresponds to the shape of the wafer in plan view. A peeling jig, which is a peeling jig that peels off a wafer attached to a dicing tape formed with a temperature-sensitive adhesive sheet, and is provided in a cylindrical dome: A square that abuts on the part of the dicing tape where the wafer to be peeled is attached; A dome plate located on the outer periphery away from the aforementioned square and abutting on the part of the aforementioned dicing tape where the wafer to be peeled is not attached; The heat treatment device that sets the square to the temperature at which the dicing tape is peeled from the wafer to be peeled off. Such as the peeling jig of claim 17, in which, It is further equipped with: a cooling part for cooling the aforementioned dome plate; The aforementioned heat treatment device is a heater that heats the aforementioned block; The aforementioned cooling unit includes: The cavity provided under the aforementioned dome plate; Cooling gas is supplied and connected to the aforementioned hollow tube. Such as the peeling jig of claim 18, in which, The first vacuum path for decompressing the suction port of the aforementioned box; Independent from the first vacuum path, the second vacuum path decompresses the suction port of the dome plate. A method of manufacturing a semiconductor device includes: (a) A peeling unit is provided for peeling a wafer attached to a dicing tape formed with a temperature-sensitive adhesive sheet, and the peeling unit is provided with and in a cylindrical dome. A square in the dicing tape where the wafer to be peeled off is attached, a dome plate located on the outer periphery away from the square and in contact with the portion where the wafer to be peeled off in the dicing tape is not attached, and The process of carrying in the wafer ring holding the dicing tape in the wafer bonding apparatus of the heat treatment device where the dicing tape is set to the temperature at which the dicing tape is peeled from the wafer to be peeled; (b) The project to move the substrate into; (c) The process of peeling the aforementioned wafer by the aforementioned peeling unit, and picking up the peeled wafer; in, In the step (c), the square is heated to a second predetermined temperature at which the dicing tape is peeled from the wafer to be peeled off. The method of manufacturing a semiconductor device according to claim 20, wherein In the aforementioned (c) process, the aforementioned dome plate is cooled. The method of manufacturing a semiconductor device according to claim 21, wherein In the step (c), the square is heated to a first predetermined temperature, and the upper surface of the square is lower than the upper surface of the dome plate, and the dicing tape is sucked by the suction port of the dome plate. . The method of manufacturing a semiconductor device according to claim 22, wherein In the step (c), the square is heated to a second predetermined temperature, and the upper surface of the square abuts against the dicing tape and is sucked by the suction opening of the square. The method of manufacturing a semiconductor device according to claim 22, wherein The first predetermined temperature is set to a temperature lower than the second predetermined temperature. The method of manufacturing a semiconductor device according to claim 23, wherein The aforementioned first predetermined temperature is set to the same temperature as the aforementioned second predetermined temperature. The method of manufacturing a semiconductor device according to claim 24 or 25, wherein: In the step (c), the wafer to be peeled is picked up from the heated dicing tape. For example, the method of manufacturing a semiconductor device of claim 26 further includes: (d) The process of bonding the picked-up wafer to the substrate or the bonded wafer. The method of manufacturing a semiconductor device according to claim 26, wherein The aforementioned (c) process further includes the process of placing the aforementioned picked-up wafers on an intermediate stage; The aforementioned (d) process further includes a process of picking up the aforementioned wafer from the aforementioned intermediate stage. The wafer bonding device of claim 10, wherein: In a plan view, a plurality of suction ports of the aforementioned block are provided on the inner side of an imaginary circle or an imaginary ellipse inscribed on the four sides of the aforementioned block, and a plurality of suction ports are provided on the outer side.

Images