JP2004186482A - Method and apparatus for pasting heat adhesive film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for pasting a heat adhesive film by which a heat adhesive film is precisely pasted to a substrate. <P>SOLUTION: A heat adhesive film is heated to be bonded hard to a wafer W while the wafer W (substrate) on which the heat adhesive film is pasted is sucked and held by a substrate support stage 32 to keep a flat state. The wafer W after the heating process is sucked and held by the substrate support stage 32, which is subjected to a cooling process. The wafer W is conveyed for delivery to the next process. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a technique for attaching a thermal adhesive sheet on a thin substrate such as a semiconductor wafer.
[0002]
[Prior art]
Conventionally, when a thermal bonding film is heated by a heating means and thermally bonded to a substrate (for example, a semiconductor wafer, hereinafter simply referred to as “wafer”), and then cooled and transported to the next step, for example, It has been done.
[0003]
Specifically, the wafer having the thermoplastic thermo-adhesive film adhered to the back surface in the attaching step is placed on a holding table in which a heater is embedded with the surface facing upward, and is suction-held. The heat bonding film attached to the rear surface of the wafer is softened and thermally bonded to the wafer by the transfer of heat from the heater.
[0004]
The wafer to which the thermal adhesive film is adhered is raised from the holding table by an elevating member for holding the center of the wafer, a pin for pushing up the wafer, and the like, and cooled at room temperature. The cooled wafer has a horseshoe-shaped robot arm tip inserted below it, and holds the peripheral edge of the wafer to be transported to the next step.
[0005]
In addition, as an apparatus for attaching a heat bonding film (for example, a die bond film) to a substrate (for example, a semiconductor wafer), Patent Literature 1 or Patent Literature 2 is known.
[0006]
[Patent Document 1]
Japanese Patent Application Laid-Open No. H10-112494 [Patent Document 2]
JP-A-2002-134438
[Problems to be solved by the invention]
However, the conventional device having such a configuration has the following problems.
In recent years, the mechanical rigidity and strength of a wafer subjected to thin processing in accordance with a demand for high-density mounting has been reduced. Attaching a thin heat-adhesive film to a wafer that has been thinned in this way cannot provide sufficient rigidity or strength, and if the adhesive film is heated and softened, the rigidity and strength must be further supplemented. Can not.
[0008]
That is, even if a wafer having no rigidity or strength is suction-held by using a horseshoe-shaped robot arm, the wafer warps and a suction failure occurs, and the wafer is dropped and damaged in the transfer process. There is.
[0009]
In addition, when the wafer is lifted and held by the elevating member, and the thermal adhesive film is left to cure and adhere to the wafer, the peripheral edge of the wafer holding only the center portion is warped downward by its own weight, and the wafer itself is warped. Warp stress acts. Further, when the heat bonding film is cured and fixed to the wafer in this state, the warping stress of the heat bonding film directly acts on the substrate.
[0010]
Therefore, it is not possible to eliminate poor suction of the wafer by the robot arm due to wafer warpage or the like. Further, there is another problem that the wafer W is damaged by being pushed up by pins or the like. Further, in the case of cooling at room temperature, it takes a long time for the thermal adhesive film to harden and fix, which causes a disadvantage that the working efficiency is lowered.
[0011]
The present invention has been made in view of such circumstances, and a main object of the present invention is to provide a method and an apparatus for attaching a thermal adhesive film to a substrate with high accuracy.
[0012]
[Means for Solving the Problems]
The present invention has the following configuration to achieve such an object.
That is, the invention according to claim 1 is a method for attaching a heat-adhesive film to a substrate, and then applying a heat treatment to the heat-adhesive film to thermally adhere the substrate to the substrate.
A step of carrying in the heating means in a state where the substrate surface is attracted by a physical action and held flat, and a step of heating the substrate by the heating means,
A step of carrying the heat-treated substrate into the cooling means in a state where the substrate surface is attracted to the substrate surface by a physical action and held flat, and the substrate is cooled.
Transporting the cooled substrate to the next step.
[0013]
(Operation / Effect) In a state where the substrate surface is attracted and held flat by a physical operation, the substrate is carried in and out of the heating means and carried in and out of the cooling means. Therefore, the thinly processed substrate can be handled without warping. As a result, it is possible to prevent the warping of the substrate or the heat-adhesive film that has occurred during the bonding and curing of the heat-adhesive film. In addition, by preventing such warpage, it is possible to eliminate problems such as poor suction due to warpage of the substrate and dropping of the substrate caused by poor suction in each transport process.
[0014]
Furthermore, even in the state of the heat-adhesive film, that is, before the substrate is completely cured and fixed, the substrate can be easily handled without causing warpage.
[0015]
According to a second aspect of the present invention, in the method for attaching a thermal adhesive film according to the first aspect, the loading of the substrate into the heating unit and the unloading of the substrate from the cooling unit to the next step are affixed to the substrate surface. The method is characterized in that the heat bonding is performed while the surface of the heat bonding film is held by suction.
[0016]
(Operation / Effect) The substrate is transported and carried out while the substrate surface to which the thermal adhesive film is adhered is held by suction, so that the substrate can be easily handled.
[0017]
According to a third aspect of the present invention, in the method for attaching a thermal adhesive film according to the first or second aspect, the heating means heats the thermal adhesive film attached to the substrate surface from above. It is a feature.
[0018]
(Operation / Effect) The thermal adhesive film attached to the substrate surface is directly heated. Therefore, for example, when a protective tape is attached to the surface, such as a semiconductor wafer, and the protective tape surface is set to the lower surface, the holding table is heated to heat the thermal adhesive film on the opposite surface of the substrate. Can be prevented from rising, and the adhesive of the protective tape melts out and adheres to the holding table or the like.
[0019]
Further, the invention according to claim 4 is a heat bonding film bonding apparatus for bonding a heat bonding film to a substrate and then heat-treating the heat bonding film to thermally bond the substrate to the substrate.
First holding means for mounting and holding the substrate;
Thermal adhesive film supply means for supplying a thermal adhesive film toward the substrate held by the first holding means;
Sticking means for sticking the supplied thermal adhesive film to the substrate surface,
Cutting means for cutting the thermal adhesive film attached to the substrate surface along substantially the periphery of the substrate,
Peeling means for peeling the unnecessary thermal adhesive film from the substrate after cutting,
Collection means for collecting the unnecessary thermal adhesive film peeled,
First transport means for transporting the substrate to which the thermal adhesive film is attached,
A second transporting unit provided with a second holding unit that receives the substrate transported by the first transporting unit, attracts the substrate surface by a physical action, and holds the substrate flat;
Heating means for heat-treating the heat-adhesive film attached to the substrate and heat-adhering to the substrate,
Cooling means for performing a cooling process on the substrate to which the heat bonding film is thermally bonded,
Further, the second transporting means is configured to perform the steps from carrying in to the heating means to carrying out and from the carrying in to the cooling means to carrying out the substrate while holding the substrate by the second holding means by suction. Is what you do.
[0020]
(Operation / Effect) Therefore, the substrate to which the thermal adhesive film has been attached is transferred to the second holding means by the first transport means. The second holding means holds the substrate surface in a plane by a physical action, and in this state, the second transfer means carries out the carry-out from the heating means and carries out the carry-out to the cooling means. Therefore, the substrate to which the thermal adhesive film is attached can prevent the substrate from warping until the thermal adhesive film is firmly thermally bonded to the substrate. That is, the method for attaching a thermal adhesive film according to claim 1 can be suitably realized.
[0021]
According to a fifth aspect of the present invention, in the thermal adhesive film bonding apparatus according to the fourth aspect, the heating means heats the thermal adhesive film from above to thermally adhere the thermal adhesive film to the substrate. It is characterized by having done.
[0022]
(Function / Effect) By heating the thermal adhesive film from above in the heating means, the thermal adhesive film attaching method according to claim 3 can be suitably realized.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of a thermal adhesive film bonding apparatus that performs the thermal adhesive film bonding method according to the present invention will be described with reference to the drawings. In the present embodiment, a case where a thermal adhesive film is attached to a semiconductor wafer (hereinafter, simply referred to as “wafer”) as a substrate will be described as an example.
[0024]
FIG. 1 is a perspective view showing the entire configuration of the thermal adhesive film sticking apparatus, FIG. 3 is a plan view thereof, and FIG. 4 is a partial front view thereof.
[0025]
As shown in FIGS. 1 and 3, the heat bonding film bonding apparatus 1 according to the present embodiment includes a substrate loading unit 3, an alignment stage 4 for positioning a substrate, and a movable film bonding stage 5 on the upper surface of a base 2. , A film sticking mechanism 6, a substrate transport mechanism 7, and a film heating sticking mechanism 8 are provided. The configuration and function of each unit will be described below.
[0026]
The substrate carrying-in section 3 is provided with a transfer robot 10 capable of bending, stretching, turning, and ascending and descending horizontally. At the tip of the transfer robot 10, a disk-shaped vacuum suction type substrate holding section 11 is provided. Provided. The substrate holding portion 11 is formed on the non-adhesive surface by coating the lower surface for adsorption with a fluororesin. The wafer W whose back surface has been polished by the back grinding device is loaded into the substrate loading portion 3 with its back surface facing upward. The wafer is sucked by the substrate holding unit 11 and transported to the alignment stage 4. Note that the substrate carrying-in section 3 corresponds to a first carrying means of the present invention.
[0027]
The alignment stage 4 aligns the wafer W loaded and loaded by the transfer robot 10 based on an orientation flat or a notch formed on the outer periphery thereof. The aligned wafer W is sucked again by the transfer robot 10 and supplied to the film sticking stage 5.
[0028]
The film sticking stage 5 is mounted on a horizontally movable actuator 12, for example, a movable table 13 which is horizontally reciprocated with a constant stroke by a rodless cylinder, and the upper surface of the stage is formed as a vacuum suction surface. Then, the wafer W transferred by the transfer robot 10 is placed in a positioned state on the upper surface of the film sticking stage 5 at a standby position corresponding to one stroke end of the movable base 13, and is suction-held. When the wafer W is loaded on the film pasting stage 5, the movable table 13 moves to the other stroke end and stops. At this point, the heat bonding film is pasted on the upward and rear surface of the wafer W. The film sticking stage 5 corresponds to a first holding unit of the present invention.
[0029]
In addition, as shown by a chain line in FIG. 4, the film pasting stage 5 preheats the stage so as to soften the adhesive when the heat bonding film f is pasted on the wafer W and exhibit an appropriate adhesive force. The heater 28 for keeping is embedded in the inside. The heating temperature is set to, for example, 110 to 120 ° C., although it depends on the thermal adhesive film used.
[0030]
As shown in FIG. 4, the film sticking mechanism 6 includes a sticking unit 15, a peeling unit 16, a film cutting unit 17, and the like. The sticking unit 15 corresponds to the sticking unit of the present invention, the peeling unit 16 corresponds to a peeling unit, and the film cutting unit 17 corresponds to a cutting unit.
[0031]
The attaching unit 15 is provided with an attaching roller 21 on a movable frame 20 guided by a guide shaft 18 shown in FIG. 3 and horizontally reciprocated by a screw shaft 19 driven by a motor.
[0032]
The peeling unit 16 is provided with a peeling roller 24 on a movable frame 23 guided by a guide shaft 18 and horizontally reciprocated by a screw driven by a motor driven screw shaft 22.
[0033]
As shown in FIG. 2, the film cutting unit 17 has a structure in which a movable frame 26 mounted to be movable up and down with respect to a fixed frame 25 is provided with a cutter 27 that is driven and rotated around a vertical support x. The vertical axis x, which is the center of rotation of the cutter 27, is set so as to coincide with the center of the wafer W set at the bonding position.
[0034]
The substrate transfer mechanism 7 includes a movable base 30 horizontally reciprocated by a rodless cylinder 29, a pair of support arms 31 extending cantilevered from the movable base 30 toward the film heating and sticking mechanism 8 side, It comprises a substrate support stage 32 erected between the distal ends of the support arms 31. The substrate transfer mechanism 7 corresponds to a second transfer unit of the present invention, and the substrate support stage 32 corresponds to a second holding unit.
[0035]
As shown in FIG. 1, the support arm 31 has an inner wall surface 31b subjected to a heat-resistant treatment with a heat insulating material or the like.
[0036]
The substrate support stage 32 is made of a heat-resistant material, and has a vacuum suction groove 33 formed on an upper surface thereof. As the heat-resistant material, for example, heat-resistant aluminum, a ceramic porous material, or the like is used.
[0037]
The film heating and sticking mechanism 8 is composed of an upper heating plate 35 which is raised and lowered by a cylinder 34 and a lower heating plate 37 which is raised and lowered by a cylinder 36. The wafer W is moved by the substrate support stage 32 of the substrate transfer mechanism 7 which has moved forward. It is carried between the heating boards 35 and 37 and is heated by pinching from above and below. Note that the film heating and sticking mechanism 8 corresponds to the heating means of the present invention.
[0038]
The schematic configuration of each part constituting the thermal bonding film bonding apparatus 1 is as described above. Next, a step of bonding the thermal bonding film f to the entire upper surface (back surface) of the wafer W will be described according to the procedure.
[0039]
(1) In the film sticking mechanism 6, the heat bonding film f fed out from the raw roll FR is guided to the sticking roller 21 and the peeling roller 25 via the guide rollers 26, and as shown in FIG. The wafer W is carried into the sticking position while the sticking unit 15 and the peeling unit 16 are waiting at the origin position.
[0040]
Incidentally, the raw fabric roll FR is for thermal adhesive film f wide sandwiched between the upper separator s ₁ and the lower separator s ₂ is rolled, the upper separator s ₁ and the lower separator s ₂ has been peeled off thermal adhesive film f state is guided to the bonding roller 21 and the peeling roller 25, the separators s ₁ of the upper and _lower, s ₂ is adapted to be winding recovered in each recovery roll SR _1, SR _2.
[0041]
(2) When the wafer W placed on the film pasting stage 5 and carried in is set and fixed at the pasting position, first, as shown in FIG. 6, the pasting unit 15 moves forward horizontally (from the right in FIG. 6). By moving along the upper surface of the wafer W (left), the thermal adhesive film f is pressed and adhered to the upper surface of the wafer W by the attaching roller 21. In this case, a heater 28 is provided inside the film sticking stage 5, and the heat bonding film f is heated so as to exhibit an appropriate adhesive force.
[0042]
(3) When the film sticking is completed, as shown in FIG. 7, the cutter 27 of the film cutting unit 17 which has been waiting above is lowered and rotated around the vertical support x, so that the thermal adhesive film f becomes the wafer W. Is cut out along the outer circumference of.
[0043]
(4) When the film cutting is completed, as shown in FIG. 8, the cutter 27 returns to the standby position and the peeling unit 16 moves forward (from right to left in FIG. 8), and the peeling roller 24 By moving forward along the upper surface, the residual film f ′ remaining around the cutout portion is peeled off.
[0044]
(5) When the film sticking process on the upward and backside of the wafer W is completed, the movable table 13 moves back to the standby position, unloads the processed wafer W from the sticking position, and sets the sticking unit 15 and the peeling unit 16 together. Return to the home position. At this time, the residual film f 'is wound up on the collecting roll FR', and a fixed amount of the heat bonding film f is unwound from the raw roll FR.
[0045]
(6) The wafer W having been subjected to the film processing is again taken out of the film pasting stage 5 by the transfer robot 10, carried into the film heating / pasting mechanism 8, and as shown in FIG. And the lower heating board 37. In this case, as shown in FIG. 12, the substrate support stage 32 of the substrate transfer mechanism 7 advances between the upper heating plate 35 and the lower heating plate 37 and stands by, and the loaded wafer W stands by. Is transferred to the upper surface of the substrate support stage 32 and fixed by suction.
[0046]
(7) When the transfer robot 10 retreats from between the upper and lower heating boards, the upper heating board 35 is lowered and the lower heating board 37 is raised, and as shown in FIG. The stage 32 is sandwiched between the heating boards 35 and 37 from above and below.
[0047]
Here, the upper heating panel 35 has a structure in which a plate heater 39 is embedded on the lower surface of the heat insulating block 38 and is supported by a heater pressing plate 40 as shown in FIGS. 11 and 12.
[0048]
The lower heating board 37 also has a structure in which a plate heater 42 is buried on the upper surface of the heat insulating block 41 and supported by a heater pressing plate 43. In addition, on the upper surface of the heat insulating block 41 in the lower heating plate 37, a heat insulating wall 41a surrounding the substrate support stage 32 from the periphery is provided so as to avoid the stage support portion 31a at the tip of the support arm. The substrate support stage 32 and the wafer W mounted thereon are entirely surrounded and efficiently heated, and the attached thermal adhesive film f is sufficiently heated to a predetermined temperature to increase the adhesive force. . The temperature at which the thermal bonding film f is firmly bonded to the wafer W depends on the type of the thermal bonding film used, but is set, for example, in the range of 180 to 220 ° C.
[0049]
Here, as shown in FIG. 14, the lower surface of the heater pressing plate 40 of the upper heating panel 35 is shallowly recessed so that the wafer W on the substrate supporting stage is not pinched and damaged. In addition, pf in FIG. 14 is a protective film stuck on the downward surface of the wafer W.
[0050]
(8) When the heat treatment for a predetermined time is completed, the upper and lower heating plates 35 and 37 are opened and lowered, and the substrate support stage 32 is moved backward from the film heating and attaching mechanism 8. In this case, as shown in FIGS. 9 and 10, an air blow nozzle 46 as a cooling means is provided at an end of an exhaust hood 45 that covers the film heating / pasting mechanism 8 from above, and this air blow nozzle 46 is Air is blown from above onto the unloaded wafer W to quickly cool the thermal bonding film f and the wafer W.
[0051]
(9) The wafer W that has been subjected to the heat bonding process and the cooling process is taken out of the substrate support stage 32 by a transfer robot (not shown) and sent to the next process.
[0052]
As described above, one heat film sticking process is completed, and the processes of the above procedure are sequentially performed.
[0053]
As described above, the heating step of heating the thermal adhesive film f stuck to the wafer W to firmly adhere to the wafer W, the cooling step of cooling the heated wafer W, and the wafer W after the cooling process are performed as follows. By transporting the wafer W while holding it in a flat state on the substrate supporting stage 32 so as to cover the entire surface of the wafer W until the wafer W is transported, the occurrence of warpage of the thinly processed wafer W is prevented. Can be.
[0054]
By preventing the occurrence of the warpage of the wafer W, it is possible to prevent the warpage in the process of curing the heat bonding film f, and it is possible to prevent the influence of the warping stress on the wafer W, which tends to occur when the heat bonding film is hardened.
[0055]
In addition, since the wafer W is transported from time to time while being kept flat on the substrate support stage 32, it is possible to prevent defective transport of the wafer W during the transport process, and to prevent damage due to dropping of the wafer W during the transport process. Can also be prevented.
[0056]
Further, by actively cooling the wafer W by the air nozzle 46, the cooling time can be reduced, and the working efficiency can be improved.
[0057]
The present invention is not limited to the above-described embodiment, but can be modified as follows.
[0058]
(1) In the above embodiment, the transfer of the wafer W from the film sticking stage 5 to the substrate transfer mechanism 7 is performed by transferring and holding only the wafer W by the transfer robot 10. The support stage 32 may be used in advance on the film sticking stage 5, and the wafer W may be transferred from the film sticking stage 5 to the substrate transfer mechanism 7 while holding the wafer W on the substrate support stage 32.
[0059]
In this case, for example, the transfer robot 10 and the substrate support stage 32 may transfer the wafer W while adsorbing and sandwiching both surfaces of the wafer W, or the lower surface of the substrate support stage 32 may be supported by the transfer robot. The wafer W and the substrate support stage 32 may be transported while being sucked and held on the substrate support stage 32, or may be transported while holding the wafer W and the substrate support stage 32 by an electrostatic chuck.
[0060]
Similarly, when the wafer W to which the heat bonding film f has been attached is transferred to the next step, the wafer W may be transferred while being held on the independently supportable substrate support stage 32.
[0061]
(2) In the above embodiment, the wafer W to which the thermal adhesive film f is attached is heated by both the upper and lower heating boards 35 and 37. However, the wafer W may be heated from one of the upper and lower sides.
[0062]
(3) In the above embodiment, the wafer W to which the thermal adhesive film is bonded is cooled using the air nozzle 46. However, the present invention is not limited to this mode. For example, the wafer W on the substrate support stage 32 may be cooled. The cooling may be performed by closely adhering a heat radiating or cooling plate, or a cooling tunnel may be provided, and the wafer W may be transferred and cooled therein.
[0063]
【The invention's effect】
As is clear from the above description, according to the present invention, the substrate to which the thermal adhesive film is attached is heat-bonded to the substrate by the heating means, and then subjected to the cooling treatment by the cooling means. Until the substrate is carried out, by maintaining the state where the substrate surface is attracted and held flat by a physical action, it is possible to prevent the substrate from warping. Therefore, it is possible to prevent damage due to transport error due to poor suction of the substrate in the transport process.
[0064]
Further, since the substrate on which the thermal adhesive film is attached can be cooled in a state where the heating means is separated, the cooling time can be reduced.
[Brief description of the drawings]
FIG. 1 is a perspective view showing the entire heat bonding film sticking apparatus according to the present invention.
FIG. 2 is a perspective view showing a main part of the film sticking mechanism.
FIG. 3 is a schematic plan view of the thermal adhesive film sticking apparatus.
FIG. 4 is a schematic front view of a film sticking mechanism.
FIG. 5 is an explanatory view showing a film sticking step.
FIG. 6 is an explanatory view showing a film sticking step.
FIG. 7 is an explanatory view showing a film sticking step.
FIG. 8 is an explanatory view showing a film sticking step.
FIG. 9 is a side view of the film heating and sticking mechanism.
FIG. 10 is a side view of the film heating and sticking mechanism in a heat treatment state.
FIG. 11 is an enlarged longitudinal sectional side view of a film heating and attaching mechanism.
FIG. 12 is an enlarged longitudinal sectional front view of a film heating and sticking mechanism.
FIG. 13 is an enlarged vertical sectional view of the film heating and sticking mechanism in a heat-treated state.
FIG. 14 is an enlarged longitudinal sectional view of a main part in a heat treatment state.
[Explanation of symbols]
W ... wafer f ... thermal adhesive film _s 1, _{s 2} ... separator 3 ... substrate inlet 4 ... alignment stage 6 ... film sticking mechanism 7 ... substrate carrying mechanism 8 ... film heating applying mechanism 32 ... substrate supporting stage

Claims (5)

After attaching the thermal adhesive film to the substrate, in a thermal adhesive film attaching method of heat-treating the thermal adhesive film and thermally bonding to the substrate,
A step of carrying in the heating means in a state where the substrate surface is attracted by a physical action and held flat, and a step of heating the substrate by the heating means,
A step of carrying the heat-treated substrate into the cooling means in a state where the substrate surface is attracted to the substrate surface by a physical action and held flat, and the substrate is cooled.
Transporting the cooled substrate to the next step. The method for attaching a thermal adhesive film according to claim 1,
The method of attaching a thermal adhesive film, wherein the loading of the substrate into the heating means and the unloading of the substrate from the cooling means to the next step are performed while holding the surface of the thermal adhesive film attached to the substrate by suction. In the method for attaching a thermal adhesive film according to claim 1 or 2,
In the heating means, the thermal adhesive film attached to the substrate surface is heated from above. After attaching the heat-adhesive film to the substrate, in a heat-adhesive film pasting device that heat-treats the heat-adhesive film and heat-adheres to the substrate,
First holding means for mounting and holding the substrate;
Thermal adhesive film supply means for supplying a thermal adhesive film toward the substrate held by the first holding means;
Sticking means for sticking the supplied thermal adhesive film to the substrate surface,
Cutting means for cutting the thermal adhesive film attached to the substrate surface along substantially the periphery of the substrate,
Peeling means for peeling the unnecessary thermal adhesive film from the substrate after cutting,
Collection means for collecting the unnecessary thermal adhesive film peeled,
First transport means for transporting the substrate to which the thermal adhesive film is attached,
A second transfer unit provided with a second holding unit that receives the substrate transferred by the first transfer unit, attracts the substrate surface by a physical action, and holds the substrate in a plane;
Heating means for heat-treating the heat-adhesive film attached to the substrate and heat-adhering to the substrate,
Cooling means for performing a cooling process on the substrate to which the heat bonding film is thermally bonded,
Further, the second transporting means is configured to perform the steps from carrying in to the heating means to carrying out and from the carrying in to the cooling means to carrying out the substrate while holding the substrate by the second holding means by suction. Thermal adhesive film sticking device. The apparatus for attaching a thermal adhesive film according to claim 4,
The heat bonding means is configured to heat the heat bonding film from above to heat bond the heat bonding film to the substrate.

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