JP2021153176A - Die bonding device, peeling jig and manufacturing method of semiconductor device - Google Patents

Abstract

To provide a die bonding device capable of reducing cracking and chipping of a die during picking up.SOLUTION: A die bonding device includes a peeling unit for peeling a die D attached to a dicing tape 16 formed of a temperature-sensitive adhesive sheet. In the peeling unit, a peeling jig 101 includes a block 102 that comes into contact with the part to which the die to be peeled is attached in the dicing tape, a dome plate 109 that comes into contact with the part to which the die to be peeled is not attached in the dicing tape, and a heat treatment device 103 for setting the block to a temperature at which the dicing tape peels from the die to be peeled, in a cylindrical dome 108.SELECTED DRAWING: Figure 5

Description

The present disclosure relates to a die bonding apparatus, and is applicable to, for example, a die bonding apparatus that picks up a die attached to a heating type release sheet.

In a die bonder in which a semiconductor chip (hereinafter referred to as a die) is mounted on the surface of a wiring board, a lead frame, or the like (hereinafter, collectively referred to as a substrate), the die is placed on the substrate by using an adsorption nozzle such as a collet. The operation (work) of bonding the bonding material by heating the bonding material is repeated while the pressing force is applied to the bonding material.

Among the die bonding steps by a die bonding device such as a die bonder, there is a peeling step of peeling a divided die from a semiconductor wafer (hereinafter referred to as a wafer) to which a dicing tape which is an adhesive tape is attached. In the peeling step, the die is pushed up from the back surface of the dicing tape by a push-up pin or a block, peeled one by one from the dicing tape held in the die supply unit, and conveyed onto the substrate using a suction nozzle such as a collet.

In recent years, for the purpose of promoting high-density mounting of semiconductor devices, a laminated package in which a plurality of dies are three-dimensionally mounted on a wiring board has been put into practical use. A die that has been thinned to a thickness of several tens of μm is used.

Japanese Unexamined Patent Publication No. 2012-4393

By the way, when the die becomes thin, the rigidity of the die becomes extremely low as compared with the adhesive force of the dicing tape. Therefore, in the package assembly process using a thin die, the die is likely to be cracked or chipped when the die divided by dicing is peeled off from the adhesive tape and picked up.

An object of the present disclosure is to provide a die bonding apparatus capable of reducing cracking or chipping of a die when picking up.

The following is a brief overview of the representative ones of the present disclosure.
That is, the die bonding apparatus includes a peeling unit that peels the die attached to the dicing tape formed of the heat peeling type adhesive sheet. The peeling unit consists of a block that comes into contact with the part of the dicing tape to which the die to be peeled is attached, a dome plate that comes into contact with the part of the dicing tape to which the die to be peeled is not attached, and the dicing tape that peels the block. A heating device that heats to a temperature at which it peels off from the target die, a temperature sensor that measures the temperature of the heating device, and a cooling unit that cools the dome plate are provided in the cylindrical dome.

According to the present disclosure, it is possible to reduce cracking and chipping of the die.

It is a top view which shows the outline of the die bonder in an embodiment. FIG. 1 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. It is a schematic cross-sectional view which shows the main part of the die supply part of FIG. It is a top view explaining the peeling jig of FIG. It is a cross-sectional view of AA of the peeling jig of FIG. It is a timing diagram which shows the peeling sequence. It is a flowchart explaining the manufacturing method of the semiconductor device using the die bonder of FIG. It is sectional drawing of the peeling jig in the 1st modification. It is sectional drawing of the peeling jig in the 2nd modification. It is sectional drawing of the peeling jig in the 3rd modification. It is a figure explaining the peeling jig in the 4th modification to the 7th modification.

Hereinafter, embodiments will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted. In addition, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited.

FIG. 1 is a top view showing an outline of a die bonder in the embodiment. FIG. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG.

The die bonder 10 is roughly divided into a die supply unit 1 for supplying a die D to be mounted on the substrate S, a pickup unit 2, an intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, and a substrate unloading unit. It has a unit 7 and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side. Here, one or a plurality of product areas (hereinafter, referred to as package areas P), which is the final package, are printed on the substrate S.

First, the die supply unit 1 supplies the die D to be mounted on the package area P of the substrate S. The die supply unit 1 has a wafer holding table 12 for holding the wafer 11 and a peeling unit 13 shown by a dotted line for peeling the die D from the wafer 11. The die supply unit 1 is moved in the XY axis direction by a driving means (not shown), and the die D to be picked up is moved to the position of the peeling unit 13.

The pickup unit 2 includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y-axis direction, and each drive (not shown) that moves the collet 22 up / down, rotates, and moves in the X-axis direction. It has a part and. The pickup head 21 has a collet 22 (see also FIG. 2) that attracts and holds the peeled die D to the tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has drive units (not shown) that move the collet 22 up / down, rotate, and move in the X-axis direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it on the package area P of the substrate S to be conveyed, or stacks it on the die already bonded on the package area P of the substrate S. Bond in shape. The bonding unit 4 includes a bonding head 41 having a collet 42 (see also FIG. 2) that attracts and holds the die D to the tip like the pickup head 21, and a Y drive unit 43 that moves the bonding head 41 in the Y-axis direction. It has a substrate recognition camera 44 that captures a position recognition mark (not shown) of the package area P of the substrate S and recognizes the bonding position. With such a configuration, the bonding head 41 corrects the pickup position / orientation based on the image data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and bases the board based on the image data of the board recognition camera 44. Bond the die D to.

The transport unit 5 has a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 to which the substrate S moves. The substrate S moves by driving a nut (not shown) of the substrate transport claw 51 provided in the transport lane 52 with a ball screw (not shown) provided along the transport lane 52. With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transport lane 52, and after bonding, moves to the substrate unloading unit 7 and passes the substrate S to the substrate unloading unit 7.

The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

Next, the configuration of the die supply unit 1 will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view showing a main part of the die supply part of FIG.

The die supply unit 1 includes a wafer holding base 12 that moves in the horizontal direction (XY axis direction) and a peeling unit 13 that moves in the vertical direction. The wafer holding table 12 has an expanding ring 15 that holds the wafer ring 14, and a support ring 17 that horizontally positions the dicing tape 16 held by the wafer ring 14 to which a plurality of dies D are adhered. The peeling unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expanding ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched to widen the interval between the dies D, and the die D is peeled from the dicing tape 16 by the peeling unit 13 to improve the pick-up property of the die D. The adhesive for adhering the die to the substrate changes from a liquid to a film, and a film-like adhesive material called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. In the wafer 11 having the die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling step, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In the following, the peeling step will be described ignoring the presence of the die attach film 18.

As the dicing tape 16, a high-temperature peelable adhesive sheet that loses its adhesive strength at a set temperature or higher or a low-temperature peelable adhesive sheet that loses its adhesive strength at a set temperature or lower is used. Here, the high-temperature peelable adhesive sheet and the low-temperature peelable adhesive sheet are referred to as temperature-sensitive adhesive sheets. As the dicing tape 16, for example, a heat release sheet (high temperature release adhesive sheet) that has adhesive strength at room temperature and peels off when heated is used. Examples of the heat-release sheet include heat-release adhesive sheets having a heat-expandable layer containing a foaming agent such as heat-expandable microspheres (trade names "Riva Alpha" (registered trademark), "Riva Clean"; , Nitto Denko Co., Ltd.) is used. For example, the 90 ° C. type of "Riva Alpha" is peeled off from a substrate or the like by heating it to 100 to 120 ° C. for 1 minute on a hot plate (hot plate). That is, when heating with a hot plate, it is necessary to set the hot plate temperature slightly higher than the peeling temperature in order to set the surface temperature of the high-temperature peelable adhesive sheet (the temperature at the interface with the die attach film 18) to the peeling temperature. be. When a high-temperature peelable adhesive sheet is used, it is preferably peeled at a temperature lower than the curing temperature (usually 150 ° C.) of the die attach film 18. Further, the curing of the die attach film 18 is carried out by applying a designated temperature for a long time (about 1 hour), and when the heating time of the high temperature peelable adhesive sheet is short, the peeling temperature of the high temperature peelable adhesive sheet is the die attach film 18. It may be about the same as the curing temperature of. As the dicing tape 16, it is preferable to use a base material thinner than the usual thickness (about 100 μm). The thickness of the dicing tape 16 is, for example, 50 to 80 μm. As a result, it is possible to increase the followability to the block at the time of adsorption.

Next, the configuration of the peeling jig will be described with reference to FIGS. 4 and 5. FIG. 4 is a top view of the peeling jig of FIG. FIG. 5 is a cross-sectional view taken along the line AA of the peeling jig of FIG.

The peeling unit 13 is roughly classified into a peeling jig 101 and a drive mechanism (not shown) for raising and lowering the peeling jig 101. As shown in FIG. 4, the peeling jig 101 includes a block 102 for heating the dicing tape 16, a heater 103 for heating the block 102, a temperature sensor 104 for measuring the temperature of the heater 103, a cooling unit 105, and a second. It has one suction unit 106, a second suction unit 107, a drive unit (not shown) that raises and lowers the block 102, a cylindrical dome 108 that holds them, and a dome plate 109 that covers the dome 108. .. The peeling jig 101 has, for example, a height of about 83 mm and a diameter of about 32 mm.

The block 102 is incorporated in the central portion of the upper part of the peeling jig 101. The block 102 has a rectangular shape in a plan view, is substantially the same as the plan shape of the die D, and is configured to have the same size. Further, the block 102 is made of a material having good thermal conductivity, such as aluminum nitride. The block 102 includes a plurality of suction ports 102a penetrating in the vertical direction, and the suction ports 102a communicate with the cavity 106a of the first suction portion 106 provided below. The cavity 106a communicates with the pipe 106b and is connected to a vacuum pump as a decompression device (not shown). When the peeling jig 101 is raised to bring the upper surface of the suction port 102a into contact with the back surface of the dicing tape 16, the pressure is reduced by the vacuum pump, and the back surface of the dicing tape 16 at the portion of the die to be picked up is blocked. It is configured to be in close contact with the upper surface of the 102. The suction port 102a and the first suction portion 106 (cavity 106a, pipe 106b) form a first vacuum path.

A heater 103 as a heat treatment apparatus is provided in contact with the lower surface of the block 102. Further, the heater 103 is provided with a temperature sensor 104, the temperature of the heater 103 and the block 102 can be controlled, and the block 102 can be heated to an arbitrary temperature.

The dome plate 109 has an opening that allows the block 102 to move up and down, and a plurality of suction ports 109a and a plurality of grooves 109b that connect the plurality of suction ports 109a are provided in the peripheral portion thereof. The suction port 109a communicates with the cavity 107a of the second suction portion 107 provided below. The cavity 107a is formed in an annular shape around the block 102. The cavity 107a communicates with the pipe 107b and is connected to the vacuum pump. When the peeling jig 101 is raised to bring the upper surface of the suction port 109a and the groove 109b into contact with the back surface of the dicing tape 16, the pressure is reduced by the vacuum pump, and the dicing tape at a portion other than the die to be picked up is decompressed. The back surface of the 16 is configured to be in close contact with the upper surface of the dome plate 109. The suction port 109a and the second suction portion 107 (cavity 107a, pipe 107b) form a second vacuum path. The second vacuum path is configured independently of the first vacuum path. That is, the second vacuum path can be evacuated at a timing different from that of the first vacuum path, or can be evacuated at the same timing.

The cooling unit 105 is provided below the cavity 107a with a wall separated from the cavity 105a, and is composed of a cavity 105a provided in an annular shape around the block 102 and a pipe 105b communicating with the cavity 105a. The pipe 105b is connected to a cooling gas supply device (not shown). The cooling gas supplied to the cavity 105a is discharged to the outside of the cooling unit 105 through an exhaust hole (not shown) provided in the wall forming the cavity 105a. As a result, it is possible to prevent the peripheral die from being heated due to the temperature rise of the dome plate 109 due to the heat from the block 102. The outer diameters of the pipes 105b, 106b, 107b are, for example, about 2.5 mm.

In order to prevent the peripheral die from being heated due to the temperature rise of the dome plate 109 due to the heat from the block 102, a gap G is provided between the block 102 and the dome plate 109 to insulate the air. The width of the gap G is, for example, about 0.5 mm.

The height of the upper surface of the block 102 is configured to be lower than the height of the upper surface of the upper surface peripheral portion (dome plate 109) of the peeling jig 101 in the initial state (when the block 102 is not operating).

Next, a method of peeling the die D from the dicing tape 16 by using the peeling jig 101 provided with the block 102 as described above will be described with reference to FIG. FIG. 6 is a timing diagram showing a peeling sequence.

(Step 1)
First, the control unit 8 lowers the expanding ring 15 of the wafer holding table 12 to push down the wafer ring 14 adhered to the peripheral portion of the dicing tape 16. In this way, the dicing tape 16 receives a strong tension from the central portion to the peripheral portion and is stretched in the horizontal direction without slack, and the interval between the dicing tapes D is widened.

(Step 2)
Next, as shown in FIG. 3, the control unit 8 has a central portion (block 102) of the peeling jig 101 directly below one die D (die D located in the central portion of the figure) to be peeled. The wafer holding table 12 is moved so that is positioned, and the collet 22 is moved above the die D. The bottom surface of the collet 22 supported by the pickup head 21 is provided with a suction port (not shown) for decompressing the inside so that only one die D to be peeled can be selectively sucked and held. It is configured in.

(Step 3: STP3)
Next, the control unit 8 sets the upper surface of the block 102 slightly lower than the upper surface of the dome plate 109 (initial state), raises the peeling jig 101, and brings the upper surface into contact with the back surface of the dicing tape 16. At the same time, the pressure inside the suction port 109a and the groove 109b of the dome plate 109 is reduced. As a result, the dicing tape 16 below the other die D adjacent to the die D to be peeled is brought into close contact with the dome plate 109. In parallel with this, the control unit 8 gradually lowers the pickup head 21 and stops the lowering when the collet 22 reaches a predetermined height from the die D. Further, the control unit 8 heats the surface temperature of the block 102 to the preheat temperature by the heater 103. The preheat temperature (T _p ) is a temperature at which the dicing tape 16 does not peel off from the die D, which is higher than the room temperature at which heating is not performed, and is, for example, 60 ° C. After that, the heater 103 starts heating so that the surface temperature of the block 102 reaches the heating target temperature ( _Th). The heating target temperature ( _Th ) is, for example, 120 ° C. Feedback control is performed using the temperature sensor 104 so as not to exceed the _{heating upper limit temperature (TH).} The upper heating temperature ( _TH ) is, for example, 130 ° C. Heating upper limit temperature _(T H), the heating target temperature _(T h), preheating temperature _{(T p)} of which are modified by the characteristics of the dicing tape.

(Step 4: STP4)
When the surface temperature of the block 102 rises to the heating target temperature after the heating time (th), the control unit 8 raises the block 102 to the same height as the upper surface of the dome plate 109 and the suction port 102a of the block 102. Depressurize the inside of. As a result, the dicing tape 16 below the die D to be peeled is brought into close contact with the upper surface of the block 102, and the dicing tape 16 is heated. After a predetermined time has elapsed after the block 102 has risen to a predetermined height, the control unit 8 gradually lowers the pickup head 21 and stops the lowering when the collet 22 reaches the height of the die D. The control unit 8 heats the block 102 at a predetermined temperature for a predetermined time by the heater 103.

(Step 5: STP5)
After that, the control unit 8 stops the heating of the block 102 by the heater 103, and sucks the die D by the suction port of the collet 22 to gradually raise the pickup head 21. When the collet 22 rises from the upper surface of the dome plate 109 to a predetermined height, the control unit 8 switches the climbing speed to a high speed and raises the collet 22.

(Step 6: STP6)
When the collet 22 of the pickup head 21 reaches a predetermined height (lowering permitted height) from the upper surface of the dome plate 109, the control unit 8 lowers the block 102 and sucks the block 102 by the suction port 102a and the dome plate. The suction by the suction port 109a of 109 is stopped.

Next, a method of manufacturing a semiconductor device using the die bonder according to the embodiment will be described with reference to FIG. 7. FIG. 7 is a flowchart showing a method of manufacturing a semiconductor device using the die bonding of FIG.

(Wafer / substrate loading process: step S11)
The wafer ring 14 holding the dicing tape 16 to which the die D separated from the wafer 11 is attached is stored in a wafer cassette (not shown) and carried into the die bonder 10. The control unit 8 supplies the wafer ring 14 to the die supply unit 1 from the wafer cassette filled with the wafer ring 14. Further, the substrate S is prepared and carried into the die bonder 10. The control unit 8 attaches the substrate S to the substrate transfer claw 51 by the substrate supply unit 6.

(Pickup process: step S12)
The control unit 8 peels off the die D as described above, and picks up the peeled die D from the wafer 11. In this way, the die D peeled from the dicing tape 16 together with the die attach film 18 is adsorbed and held by the collet 22 and conveyed to the next step (step S13). Then, when the collet 22 that has conveyed the die D to the next step returns to the die supply unit 1, the next die D is peeled off from the dicing tape 16 according to the above procedure, and thereafter, the dicing tape 16 to 1 is followed by the same procedure. The die D is peeled off one by one.

(Bonding step: Step S13)
The control unit 8 mounts the picked-up die on the substrate S or stacks the picked-up die on the die that has already been bonded. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with the bonding head 41, and bonds the die D to the conveyed substrate S.

(Substrate unloading process: step S14)
The control unit 8 takes out the substrate S to which the die D is bonded from the substrate transfer claw 51 at the substrate carry-out unit 7. The substrate S is carried out from the die bonder 10.

As described above, the die D is mounted on the substrate S via the die attach film 18 and carried out from the die bonder. After that, it is electrically connected to the electrode of the substrate S via the Au wire in the wire bonding step. Subsequently, the substrate S on which the die D was mounted was carried into the die bonder, and the second die D was laminated on the die D mounted on the substrate S via the die-attach film 18 and carried out from the die bonder. After that, it is electrically connected to the electrode of the substrate S via the Au wire in the wire bonding step. The second die D is peeled from the dicing tape 16 by the method described above, and then conveyed to the pelleting step and laminated on the die D. After the above steps are repeated a predetermined number of times, the substrate S is conveyed to the molding step, and the plurality of dies D and Au wires are sealed with a molding resin (not shown) to complete the laminated package.

According to the embodiment, it has one or more of the following effects.
(1) By heating with a block whose outer shape matches the die size, heat conduction to the die (peripheral die) located around the die to be picked up (die to be peeled off) and the dicing tape under the peripheral die is reduced. It is possible. As a result, it is possible to prevent the peripheral dies from easily peeling off and reduce the risk of damage.
(2) By cooling the dome plate, it is possible to further reduce the conduction of heat to the peripheral die and the dicing tape under the peripheral die.
(3) Since the dicing tape is sandwiched and heated from the side opposite to the die, it is possible to prevent unnecessary heat from being transferred to the surface of the die.
(4) Since the dome plate and the block are driven independently, the outer circumference of the die to be peeled can be held without heating the die to be peeled, so that the die to be peeled can be accurately aligned.
(5) Since the block cannot be pushed up higher than the die plate, it can be picked up with low stress. This makes it possible to reduce cracking and chipping of the die.

As described above, when assembling a laminated package in which a plurality of dies are three-dimensionally mounted on a substrate, it is required to reduce the die thickness to 20 μm or less in order to prevent an increase in the package thickness. On the other hand, since the thickness of the dicing tape is about 100 μm, the thickness of the dicing tape is 4 to 5 times the thickness of the die. When the die becomes thin, the rigidity of the die becomes extremely low compared to the adhesive strength of the dicing tape. Therefore, for example, in order to pick up a thin die having a thickness of 20 μm or less, it is necessary to reduce the stress applied to the die (reduce the stress). When an attempt is made to peel off such a thin die from the dicing tape, the deformation of the die following the deformation of the dicing tape is more likely to occur. However, in the die bonder of the present embodiment, when the die is picked up from the dicing tape. Damage to the die can be reduced.

<Modification example>
Hereinafter, some typical modifications of the embodiment will be illustrated. In the following description of the modified example, the same reference numerals as those in the above-described embodiment may be used for the portions having the same configurations and functions as those described in the above-described embodiment. As for the explanation of such a part, the explanation in the above-described embodiment can be appropriately incorporated within a range that is not technically inconsistent. In addition, a part of the above-described embodiment and all or a part of the plurality of modifications can be applied in combination as appropriate within a technically consistent range.

(First modification)
The peeling jig in the first modification will be described with reference to FIG. FIG. 8 is a cross-sectional view of the peeling jig in the first modification.

The peeling jig 201 in the first modification is a semiconductor that causes a temperature difference by passing a current provided in an annular shape between the block 102 and the dome plate 109 instead of the heater 103 and the cooling unit 105 of the embodiment. A Perche element 210 as a cooling element is provided. Here, the Perche element 210 is a heat treatment device and also a cooling unit. The upper surface of the Pelche element 210 as a cooling surface is brought into contact with the dome plate 109, and the lower surface as a heat radiating surface is brought into contact with the block 102. Here, the lower surface of the perche element 210 is fixed on the flat surface of the block 102 located below the cavity 107a of the second suction portion 107, and the upper surface of the perche element 210 is raised by raising the block 102 so that the upper surface of the perche element 210 becomes the second suction portion. It is preferable that the cavity 107a of 107 is configured to be in contact with the lower surface of the wall constituting the cavity 107a. This makes it possible to heat the block 102 before the block 102 comes into contact with the dicing tape 106.

With the above configuration, the Perche element 210 can cool the dome plate 109 and heat the block 102. Further, since a cooling gas supply device or the like is not required and the heat dissipation of the Pelche element 210 can be used for heating the push-up block, it is possible to improve the compactness and energy efficiency.

If it is necessary to raise the temperature of the block 102 to a higher temperature and the heating temperature is insufficient for heat dissipation of the Pelche element 210, the heater 103 provided in the embodiment may be used in combination to heat the block 102 to the processing temperature. good. When a low-temperature peelable dicing tape is used, the block 102 is cooled and the dome plate 109 is heated in the same manner by controlling the polarities of the supply currents of the wirings 210a and 210b of the Pelche element 210 in reverse. Is possible.

(Second modification)
The peeling jig in the second modification will be described with reference to FIG. FIG. 9 is a cross-sectional view of the peeling jig in the second modification.

The peeling jig 301 in the second modification includes an infrared lamp 320 as a heat treatment device in the block 302 instead of the heater 103 of the embodiment. Further, the peeling jig 301 does not include the cooling unit 105 and the first suction unit 106 of the embodiment. Further, the block 302 has an opening 302a having a shape corresponding to the die D, and the infrared lamp 320 directly heats the dicing tape 16 without passing through the block 302. As a result, the portion of the dicing tape 16 located below the pick-up die D can be selectively heated, and the die D can be peeled off from the dicing tape 16 as in the embodiment.

The inner surface of the block 302 in which the infrared lamp 320 is built may be coated with a reflective material 302b by gold plating or aluminum vapor deposition having a high reflectance with respect to infrared rays. This makes it possible to more efficiently guide infrared rays to the lower portion of the dicing tape 16 to be peeled off.

Further, a plate 302c formed of a material having a high transmittance for infrared rays such as quartz glass may be provided in the opening 302a of the block 302. As a result, the flatness of the die D is maintained, and pickup by the collet 22 becomes easier.

(Third modification example)
The peeling jig in the third modification will be described with reference to FIG. FIG. 10 is a cross-sectional view of the peeling jig in the third modification.

The third modification includes a laser irradiation unit 430 that can arbitrarily change the irradiation area and size in place of the infrared lamp of the second modification. The laser irradiation unit 430 as a heat treatment apparatus has a condensing lens unit 430a, and directly heats the dicing tape 16 without passing through the block 402, similarly to the infrared lamp 320 in the second modification. Here, the laser irradiation unit 430 is provided inside the block 402, but a laser light source (not shown) is installed outside and introduced to the laser irradiation unit 430 by an optical fiber 430b or the like. As a result, the portion of the dicing tape 16 located below the pick-up die D can be selectively irradiated with the laser beam, and the die D can be peeled off from the dicing tape 16 as in the embodiment. ..

Since the size of the laser beam and the irradiation time of the laser light source and the laser irradiation unit 430 can be arbitrarily changed, the size of the die as a semiconductor product or the processing conditions of the processing temperature can be freely changed by a program. This makes it possible to minimize the replacement of the peeling jig. Further, since the laser light can intensively irradiate the energy only to the irradiation area, it is possible to minimize the temperature rise of the dome plate 109 or the like outside the irradiation area.

Further, as in the second modification, the opening 402a of the block 402 may be provided with a plate 402c made of a material having high transmittance for the laser light used such as quartz glass. As a result, the flatness of the die D is maintained, and pickup by the collet 22 becomes easier.

(4th modified example to 7th modified example)
In the embodiment, the suction port 102a provided in the block 102 is arranged at the center in a plan view. In the fourth to seventh modifications, in addition to the central portion, at least four corners of the quadrangle formed by the upper surface of the block 102a, that is, a region outside the virtual circle or virtual ellipse inscribed in the four sides of the quadrangle. Also has a suction port.

The peeling jigs in the fourth to seventh modifications will be described with reference to FIG. FIG. 11 is a diagram illustrating a peeling jig in the fourth modified example to the seventh modified example. FIG. 11A is a top view of the block of the peeling jig in the fourth modification. FIG. 11B is a top view of the block of the peeling jig in the fifth modification. FIG. 11C is a top view of the block of the peeling jig in the sixth modification. FIG. 11D is a top view of the block of the peeling jig in the seventh modification.

In the fourth to seventh modifications, the block 102 in the embodiment changes the number, arrangement, or diameter of the plurality of suction ports 102a penetrating in the vertical direction to more uniformly adsorb the dicing tape 16 on the lower surface of the die D. And try to heat more evenly.

As shown in FIG. 11A, in the fourth modification, four suction ports 102a are provided at the center of the block 102, and one suction port 102a is provided at each of the four corners. As in the embodiment, the suction port 102a is provided only in the center, and the suction effect on the outer peripheral portion can be expected. Here, the diameter of the suction port 102a is, for example, 0.8 mm.

As shown in FIG. 11B, in the fifth modification, the suction port 102a is arranged on the entire surface of the block 102. By evenly adsorbing the entire die D, it can be heated uniformly. Here, the pitch (PT) of the suction port 102a is, for example, 2 mm. The diameter of the outermost suction port 102a is, for example, 0.6 to 0.8 mm, and the diameter of the inner suction port 102a is, for example, 0.8 mm. The distance (thickness, W) between the outermost suction port 102a and the end of the block 102 is, for example, about 0.5 mm.

As shown in FIG. 11C, in the sixth modification, the block 102 is provided with a plurality of pulling ports 102a and a plurality of grooves 102c connecting the plurality of pulling ports 102a. By providing the groove 102c, the gap between the suction ports 102a can be supplemented.

As shown in FIG. 11D, in the seventh modification, the block 102 is composed of a central portion 102d formed of a porous metal and a frame portion 102e surrounding the outer periphery of the central portion 102d. Suction is performed from the pores 102f formed in the central portion 102d. The frame portion 102e prevents leakage from the side of the central portion 102d. The entire surface can be adsorbed while securing the adhesion area with the die.

The disclosure made by the present disclosers has been specifically described based on the embodiments and modifications, but the present disclosure is not limited to the above embodiments and modifications, and various modifications can be made. Needless to say.

For example, in the embodiment, the height at which the collet picks up the die is the die surface height, but the die surface height after the dicing tape foaming may be waited for, or the collet may be raised according to the increase in the die height due to the foaming. It may rise. A sensor may be provided in the pickup head, and the sensor may be used to control the pushing load in real time so as to keep it constant.

Further, in the embodiment, an _{example in which the block is preheated at the preheat temperature (T p} ) has been described, but the block may be kept heated to the _{heating target temperature (Th) without preheating.}

Further, in the embodiment, the temperature of the block is measured by a temperature sensor provided in the heater of the block, but the present invention is not limited to this, and an infrared radiation temperature sensor or the like is provided to heat a die or a heat peeling type. The dicing tape formed of the adhesive sheet may be directly measured.

Further, in the embodiment, the example of supplying the cooling gas to the cavity of the cooling unit has been described, but the cooling liquid may be supplied. In this case, the cooling liquid is collected by a pipe or the like.

Further, in the embodiment, an example in which a high temperature peelable adhesive tape is used as the dicing tape has been described, but a low temperature peelable adhesive tape may be used. In this case, the heat treatments of the heater 103 and the cooling unit 105 are exchanged, a cooling unit is provided below the block 102, and a heating unit is provided below the dome plate.

Further, in the embodiment, the example in which the collet is brought into contact with the die while the block is being heated has been described, but the collet may not be brought into contact with the die while the block is being heated. This makes it possible to prevent heat from escaping to the collet due to heat transfer from the die.

Further, in the third modification, an example in which a plate 402c made of a material having a high transmittance for laser light is provided in the opening 402a of the block 402 has been described, but it is made of a material that generates heat by absorbing the laser light. A plate may cover the opening 402a of the block 402 and irradiate a laser beam to heat the plate to indirectly heat the dicing tape. In this case, it is preferable that the plate is provided with a suction port similar to the suction port 102a of the embodiment, and a suction portion similar to the first suction portion 106 of the embodiment is provided below the suction port.

Further, in the embodiment, the die D on the dicing tape 16 is vacuum (decompressed) and fixed by the suction port provided in the block 102, but the present invention is not limited to this, and for example, it has a heater function. The block may be formed by using the electrostatic suction chuck, and the dicing tape 16 on the lower surface of the die D may be sucked. As a result, the block does not require a suction port or groove for vacuum suction, and can be heated more uniformly.

Further, in the embodiment, the example of using the die attach film has been described, but it is not necessary to provide the preform portion for applying the adhesive to the substrate and not use the die attach film.

Further, in the embodiment, a die bonder in which a die is picked up from a die supply unit by a pickup head and placed on an intermediate stage, and a die placed on the intermediate stage is bonded to a substrate by a bonding head has been described, but the present invention is limited to this. It is not applicable to semiconductor manufacturing equipment that picks up dies from the die supply unit.

For example, it can be applied to a die bonder that does not have an intermediate stage and a pickup head and bonds a die of a die supply unit to a substrate with a bonding head. In this case, when the collet and the die are misaligned, the undervision camera or the like may recognize the misalignment of the die and perform bonding correction.

Further, there is no intermediate stage, and the die can be applied to a flip-chip bonder that picks up a die from a die supply unit, rotates the die pickup head upward, delivers the die to the bonding head, and bonds the die to the substrate by the bonding head.

In addition, it does not have an intermediate stage and a bonding head, and can be applied to a die sorter in which a die picked up by a pickup head from a die supply unit is placed on a tray or the like.

10: Die bonder 12: Wafer holder 13: Peeling unit 101: Peeling jig 102: Block 103: Heat treatment device
108: Dome 109: Dome plate 16: Dicing tape 21: Pickup head D: Die

Claims (29)

A wafer holding table that holds a dicing tape formed of a temperature-sensitive adhesive sheet,
A peeling unit that peels off the die attached to the dicing tape,
A head that picks up the die peeled from the dicing tape and
With
The peeling unit is
A block of the dicing tape that comes into contact with the part to which the die to be peeled is attached,
A dome plate located on the outer periphery away from the block and in contact with a portion of the dicing tape to which the die to be peeled is not attached.
A heat treatment apparatus that sets the temperature at which the dicing tape is peeled from the die to be peeled off, and
Is a die bonding device provided in a cylindrical dome. In the die bonding apparatus of claim 1,
Further, a cooling unit for cooling the dome plate is provided.
The heat treatment device is a heater that heats the block.
The cooling unit
The cavity provided below the dome plate and
A pipe to which a cooling gas is supplied and communicates with the cavity,
A die bonding device equipped with. In the die bonding apparatus of claim 1,
Further, a cooling unit having a semiconductor cooling element provided below the dome plate is provided.
A die bonding apparatus configured to cool the dome plate by the cooling surface of the semiconductor cooling element. In the die bonding apparatus of claim 3,
A die bonding device configured to heat the block by the heat radiating surface of the semiconductor cooling element. In the die bonding apparatus of claim 1,
The heat treatment apparatus is an infrared lamp provided inside the block, and the infrared lamp is a die bonding apparatus configured to irradiate the dicing tape with heat through an opening provided in the block. In the die bonding apparatus of claim 5,
A die bonding device in which the opening of the block is covered with a surface plate made of a material that transmits infrared rays. In the die bonding apparatus of claim 1,
The heat treatment device is a unit that irradiates a laser beam provided inside the block, and the unit is a die bonding device configured to irradiate a dicing tape with a laser beam through an opening provided in the block. In the die bonding apparatus of claim 7,
A die bonding apparatus in which the opening of the block is covered with a surface plate made of a material that transmits the laser beam. In the die bonding apparatus of claim 7,
The opening of the block is covered with a surface plate formed of a material that generates heat by absorbing the laser beam, and the surface plate is heated by irradiating the laser beam to indirectly heat the dicing tape. Die bonding equipment. In the die bonding apparatus according to any one of claims 1 to 4,
The peeling unit further
A first vacuum path for depressurizing the suction port of the block,
A second vacuum path that is independent of the first vacuum path and depressurizes the suction port of the dome plate.
A die bonding device equipped with. In the die bonding apparatus according to any one of claims 1 to 9.
In addition, it has a control unit
The control unit heats the block to a first predetermined temperature by the heat treatment apparatus and sucks the dicing tape by the suction port of the dome plate in a state where the upper surface of the block is lower than the upper surface of the dome plate. A die bonding device configured to do so. In the die bonding apparatus of claim 11,
The control unit is a die bonding device configured to heat the block to a second predetermined temperature by the heat treatment device and to bring the upper surface of the block into contact with the dicing tape and suck it by the suction port of the block. In the die bonding apparatus of claim 12,
The control unit is a die bonding device configured to set the second predetermined temperature to a temperature higher than the first predetermined temperature. In the die bonding apparatus of claim 12,
The control unit is a die bonding device configured to set the second predetermined temperature to the same temperature as the first predetermined temperature. In the die bonding apparatus of claim 13,
The control unit is a die bonding device configured to pick up the die to be peeled from the heated dicing tape by the head. In the die bonding apparatus of claim 1,
A die bonding device in which the shape of the block in a plan view is a shape that matches the shape of the die in a plan view. A peeling jig that peels off the die attached to the dicing tape formed of the temperature-sensitive adhesive sheet.
A block of the dicing tape that comes into contact with the part to which the die to be peeled is attached,
A dome plate located on the outer periphery away from the block and in contact with a portion of the dicing tape to which the die to be peeled is not attached.
A heat treatment apparatus that sets the block at a temperature at which the dicing tape peels from the die to be peeled.
A peeling jig provided in a cylindrical dome. In the peeling jig of claim 17,
Further, a cooling unit for cooling the dome plate is provided.
The heat treatment device is a heater that heats the block.
The cooling unit
The cavity provided below the dome plate and
A pipe to which a cooling gas is supplied and communicates with the cavity,
A peeling jig equipped with. In the peeling jig of claim 18, further
A first vacuum path for depressurizing the suction port of the block,
A second vacuum path that is independent of the first vacuum path and depressurizes the suction port of the dome plate.
A peeling jig equipped with. (A) A peeling unit for peeling a die attached to a dicing tape formed of a temperature-sensitive adhesive sheet is provided, and the peeling unit is a block of the dicing tape that comes into contact with a portion of the dicing tape to which the die to be peeled is attached. A dome plate located on the outer periphery away from the block and in contact with a portion of the dicing tape to which the die to be peeled is not attached, and the block being peeled from the die to be peeled by the dicing tape. A step of carrying a wafer ring holding the dicing tape into a die bonding device having a heat treatment device set to a temperature and a die bonding device provided in a cylindrical dome.
(B) The process of bringing in the substrate and
(C) A step of peeling the die with the peeling unit and picking up the peeled die.
Have,
The step (c) is a method for manufacturing a semiconductor device that heats the block to a second predetermined temperature at which the dicing tape peels from the die to be peeled. In the method for manufacturing a semiconductor device according to claim 20,
The step (c) is a method for manufacturing a semiconductor device for cooling the dome plate. In the method for manufacturing a semiconductor device according to claim 21,
In the step (c), a semiconductor that heats the block to a first predetermined temperature and sucks the dicing tape by a suction port of the dome plate in a state where the upper surface of the block is lower than the upper surface of the dome plate. Manufacturing method of the device. In the method for manufacturing a semiconductor device according to claim 22,
The step (c) is a method for manufacturing a semiconductor device in which the block is heated to the second predetermined temperature, and the upper surface of the block is brought into contact with the dicing tape and sucked by the suction port of the block. In the method for manufacturing a semiconductor device according to claim 22,
A method for manufacturing a semiconductor device, in which the first predetermined temperature is set to a temperature lower than the second predetermined temperature. In the method for manufacturing a semiconductor device according to claim 23,
A method for manufacturing a semiconductor device in which the first predetermined temperature is set to the same temperature as the second predetermined temperature. In the method for manufacturing a semiconductor device according to claim 24 or 25,
The step (c) is a method for manufacturing a semiconductor device that picks up the die to be peeled from the heated dicing tape. In the method for manufacturing a semiconductor device according to claim 26, further
(D) A method for manufacturing a semiconductor device, comprising a step of bonding the picked-up die onto the substrate or a die that has already been bonded. In the method for manufacturing a semiconductor device according to claim 26,
The step (c) further includes a step of placing the picked-up die on an intermediate stage.
The step (d) is a method for manufacturing a semiconductor device, further comprising a step of picking up the die from the intermediate stage. In the die bonding apparatus of claim 10,
In a plan view, the suction ports of the block are a plurality of die bonding devices provided inside and outside a virtual circle or a virtual ellipse inscribed on the four sides of the block.

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