WO2014002535A1 - Procédé de fabrication d'un dispositif semi-conducteur - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur Download PDF

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Publication number
WO2014002535A1
WO2014002535A1 PCT/JP2013/057516 JP2013057516W WO2014002535A1 WO 2014002535 A1 WO2014002535 A1 WO 2014002535A1 JP 2013057516 W JP2013057516 W JP 2013057516W WO 2014002535 A1 WO2014002535 A1 WO 2014002535A1
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sheet
expanding
led
wafer
semiconductor
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PCT/JP2013/057516
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English (en)
Japanese (ja)
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勝次 井口
渡辺　昌規
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シャープ株式会社
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Definitions

  • the present invention relates to a method for manufacturing a semiconductor device.
  • a white light emitting device using a blue light emitting element using a nitride semiconductor element as a light emitting element and a phosphor has been used for a backlight of a large liquid crystal television, a light source for illumination, and the like.
  • the mounting method of the LED chip having the p-side electrode and the n-side electrode on the surface includes a so-called face-up mounting method in which the back surface is fixed to the package and a so-called flip in which the surface is mounted on a support member called a package or submount There is a chip mounting method.
  • the face-up mounting method has an advantage that manufacturing is easy because an adhesive is simply applied to the back surface of the LED chip and attached to the package, and wiring can be performed using an existing wire bonding technique.
  • the flip chip type device is suitable for operation with a large current because it easily transfers heat near the surface of the LED chip to the support member, but it needs to be bonded to the support member to connect the electrodes to the outside. Become.
  • the LED chips are collectively mounted and bonded to the wafer-like submount substrate, and then the wafer-like submount on which the LED chips are mounted is made into small pieces.
  • Technology to split has been developed.
  • Patent Documents 1 and 2 disclose a technique for performing batch bonding by widening the interval between LED chips with high accuracy as described below.
  • Patent Document 1 when “the matrix semiconductor chip assembly is collectively mounted on a circuit board by changing the arrangement of the semiconductor chips in close contact with each other and expanding the arrangement into a matrix assembly”
  • a process of cutting a semiconductor wafer deposited on an expanded sheet into a matrix and A step of inserting a spacer member between the rows of the cut semiconductor wafer in the X-axis direction to expand the space between the rows to the width of the spacer member, a step of holding the space between the expanded rows of the X-axis, and the semiconductor wafer A step of inserting a spacer member between each column in the Y-axis direction to expand the interval between the columns to the width of the spacer member, a step of maintaining the space between the expanded columns in the Y-axis direction, and a matrix shape It discloses a "method and a step of peeling the expanded sheet from set holding semiconductor elements.
  • the alignment width of the semiconductor chips can be easily regulated by inserting a spacer member having a predetermined width between the diced semiconductor wafers, and the semiconductor chips are arranged in a matrix with high accuracy. Therefore, in assembly mounting with the circuit board in the next process, it is possible to provide assembly mounting with good alignment accuracy and very few defects ”.
  • Patent Document 2 as a countermeasure against the same chip position deviation, “a process of expanding each of the LED element chips by cutting the LED element wafer adhered on the expanded tape vertically and horizontally, and expanding the expanded tape to a predetermined size; Each LED element chip on the expanded expansion tape that has been expanded is inserted into the opening of the jig plate for positioning, and the corner of each LED element chip is brought into contact with the corner of the opening of the jig plate.
  • a positioning step for aligning the LED element chips at a predetermined position and a step for mounting the aligned LED element chips on a circuit board for mounting are disclosed.
  • the LED element chips on the expanded expanded tape can be accurately aligned and arranged at a predetermined position, and many LED element chips can be collectively arranged on a circuit board. As a result, it is possible to realize an LED element manufacturing method that enables efficient mounting with a short assembly time while maintaining positional accuracy. " .
  • JP 2011-171608 A Japanese Patent Publication “JP 2011-96961 A” (published May 12, 2011)
  • Patent Documents 1 and 2 described above when a semiconductor wafer is divided into a plurality of semiconductor chips, the sheet on which the semiconductor wafer is placed is expanded as it is, so that a plurality of divided semiconductors are obtained. A gap is provided between the chips.
  • the sheet on which the semiconductor wafer is placed may be damaged due to the division. Since the thickness of the scratched portion of the sheet is different, if the damaged sheet is expanded as it is, the distance between the gaps between the plurality of semiconductor chips cannot be made exactly constant.
  • the method of correcting the position of each semiconductor chip after the expansion process using a spacer member, a positioning jig plate, or the like causes a problem that the process becomes complicated.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to prevent misalignment of the semiconductor chip after the expansion process.
  • a method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device in which a semiconductor wafer is divided into a plurality of semiconductor chips and the semiconductor device is obtained from the semiconductor chips.
  • a step of dividing the semiconductor wafer arranged on the dividing sheet into a plurality of semiconductor chips, a step of transferring the divided semiconductor chips to an expanding sheet different from the dividing sheet, and a plurality of steps The expanding sheet on which the semiconductor chip is transferred is expanded to a predetermined size, and a gap is provided between the plurality of semiconductor chips.
  • a method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device in which a semiconductor wafer is divided into a plurality of semiconductor chips, and the semiconductor device is obtained from the semiconductor chips, and the semiconductor device is provided on a dividing sheet.
  • FIG. 1 It is a figure showing the flow of the manufacturing process of the semiconductor device concerning 1st Embodiment. It is sectional drawing which shows 1 element part of the LED wafer concerning 1st Embodiment.
  • A) is a top view showing the LED wafer affixed on the sheet
  • (b) is sectional drawing of (a). It is a figure showing a mode that the chip
  • substrate showing a mode that the board
  • FIG. 1 is a diagram showing a flow of manufacturing steps of the semiconductor device according to the first embodiment.
  • the semiconductor device manufacturing method according to the present embodiment is a semiconductor device manufacturing method in which a semiconductor wafer is divided into a plurality of semiconductor chips and a semiconductor device is obtained from the semiconductor chips.
  • a method for manufacturing such a semiconductor device the present embodiment will be described as a method for manufacturing an LED element (LED light-emitting element).
  • the LED element is attached to the back surface polishing step M11, the scribing step M12, the chip dividing step M13, the transfer step M14, the first expanding step M15, the second expanding step M16, and pasting.
  • the alignment process M17, the sealing process M18, and the separation process M19 are performed in this order.
  • the back surface of the LED wafer (semiconductor wafer) in which various semiconductor layers are laminated on the substrate is polished to adjust the total thickness of the LED wafer. Then, the LED wafer whose thickness is adjusted is moved to a scribe step M12.
  • the LED wafer is attached to, for example, a scribe (dicing) sheet, and a scribe process (fragmented part for division is formed on the surface or inside of the wafer using a diamond scriber, a laser scriber, a dicing apparatus, or the like. ).
  • the LED wafer whose thickness is adjusted in the back surface polishing step M11 is bonded to the dividing sheet. Then, after being bonded to the dividing sheet, the LED wafer is scribed. Thereby, the grid
  • the chip dividing step M13 is a step of dividing the LED wafer that has been subjected to the scribing process and arranged on the dividing sheet into a plurality of LED chips (semiconductor chips).
  • the blade is applied from the back side of the dividing sheet (the side opposite to the bonding surface of the LED wafer) to the LED wafer on which the weak portion for division is formed by the scribing process in the scribing step M12. By pressing strongly, it divides
  • the reprinting process M14 is a process in which the LED chips divided in the chip dividing process M13 are collectively transferred (transferred) from the dividing sheet to an expanding sheet different from the dividing sheet.
  • the plurality of LED chips divided in the chip dividing step M13 are collectively transferred from the dividing sheet to the first expanding sheet, and the dividing sheet is removed from the plurality of LED chips. Then, the plurality of LED chips that are collectively transferred to the first expanding sheet are moved to the first expanding step M15.
  • the first expanding step M15 is a step of expanding the first expanding sheet and providing a first gap between the plurality of LED chips divided in the chip dividing step M13.
  • the first expanding step M15 is also a step of transferring (transferring) the plurality of LED chips provided with the first gap to the second expanding sheet all at once.
  • the expanding process is performed in two steps. Then, the first expanding process is performed in the first expanding step M15.
  • the first expanding process performed in the first expanding step M15 may be referred to as a first expanding process.
  • the first expanding sheet on which the plurality of LED chips are collectively transferred in the transferring step M14 is fixed, and the back surface of the first expanding sheet (a plurality of LED chips are arranged).
  • the first expanding sheet is stretched to a predetermined size by pushing from the side opposite to the surface. That is, the first expanding process is performed (expanding). Accordingly, a first gap is provided between the plurality of LED chips arranged on the first expanding sheet.
  • the plurality of LED chips provided with the first gap are collectively transferred from the first expanding sheet to the second expanding sheet. Then, the plurality of LED chips provided with the first gap and collectively transferred to the second expanding sheet are moved to the second expanding step M16.
  • the second expanding step M16 is a step of expanding the second expanding sheet and further providing a second gap to the plurality of LED chips provided with the first gap in the first expanding step M15.
  • the second expanding step M16 is also a step of transferring (transferring) the plurality of LED chips provided with the second gap to the bonding sheet at once.
  • the second expanding process is performed in the second expanding process M16.
  • the second expanding process performed in the second expanding process M16 may be referred to as a second expanding process.
  • the second expanding sheet in which the first gap is provided in the first expanding step M15 and the plurality of LED chips are transferred together is fixed, and the back surface of the second expanding sheet
  • the second expanding sheet is extended by pressing from the side opposite to the side where the plurality of LED chips are arranged. That is, the second expanding process is performed. Thereby, a second gap is provided between the plurality of LED chips arranged on the second expanding sheet.
  • the plurality of LED chips provided with the second gap are collectively transferred from the second expanding sheet to the first bonding sheet. Then, the plurality of LED chips provided with the second gap and collectively transferred to the bonding sheet are moved to the bonding step M17.
  • the bonding step M17 the first bonding sheet on which the plurality of LED chips are transferred is placed so that the chip mounting surface overlaps the submount wafer, and the plurality of LED chips are collectively put on the submount wafer. It is a process of bonding.
  • a second bonding sheet having a submount wafer bonded to the surface is prepared. Then, in the second expanding step M16, the surfaces of the plurality of LED chips transferred together on the first bonding sheet are bonded to the surface of the submount wafer. Thereafter, the first bonding sheet and the second bonding sheet are peeled off from the plurality of LED chips and the submount wafer, respectively. The plurality of LED chips and submount wafers bonded together are then moved to a sealing step M18.
  • Sealing step M18 is a step of sealing a plurality of LED chips bonded to the submount wafer with a resin.
  • a sealing resin is formed directly or indirectly on the surface of the submount wafer so as to cover the plurality of LED chips bonded to the surface of the submount wafer in the bonding step M17.
  • the plurality of LED chips on the surface of the submount wafer are sealed with the sealing resin.
  • the submount wafer in which the plurality of LED chips are sealed is moved to the separation step M19.
  • the separation step M19 is a step of dividing the submount wafer in which the plurality of LED chips are sealed in the sealing step M18 into a plurality of submounts.
  • the separation step M19 the submount wafer in which the plurality of LED chips are sealed with the sealing resin in the sealing step M18 is separated for each submount, that is, for each of the plurality of LED chips. Thereby, the some LED element fragmented can be obtained.
  • the manufacturing method of the semiconductor device after dividing the LED wafer arranged on the dividing sheet into a plurality of LED chips, the plurality of divided LED chips are separated from the dividing sheet. Is transferred to a different first expanding sheet, and then the first expanding sheet is expanded to a predetermined size, thereby providing a first gap between the plurality of LED chips.
  • an accurate first gap can be provided between the plurality of LED chips. That is, it is possible to prevent positional deviation of each of the plurality of LED chips after the first expanding process. For this reason, it is not necessary to correct the misalignment of the LED chip that accompanies expansion.
  • FIG. 2 is a cross-sectional view showing one element portion of the LED wafer 50.
  • the LED wafer 50 is an example of a semiconductor wafer to be processed in the semiconductor device manufacturing method according to the present embodiment.
  • the LED wafer 50 is configured by arranging a plurality of LED chips 55 as one element in a matrix. That is, the LED wafer 50 is a semiconductor wafer before the plurality of LED chips 55 are divided into each.
  • the LED wafer 50 is configured by laminating a laminated body 23 in which various semiconductor layers, electrodes, and the like are laminated on a substrate 10.
  • the upper side of the paper surface represents the back surface 10b (that is, the back surface of the LED wafer 50), and the side opposite to the back surface 10b (the surface below the back surface 10b) represents the front surface 10a.
  • the substrate 10 is made of, for example, sapphire.
  • the back surface 10b of the substrate 10 is a light extraction surface.
  • Concave portions 11 and convex portions 23 are alternately and continuously formed on the surface 10 a of the substrate 10.
  • the recess 11 has a shape that is recessed toward the back surface 10 b side of the substrate 10.
  • the convex portion 23 has a shape protruding in the direction opposite to the back surface 10 b of the substrate 10.
  • the stacked body 23 includes a buffer layer 13 in contact with the surface 10a of the substrate 10, a crystal improved nitride semiconductor layer 14, an n-type nitride semiconductor layer 15, a nitride semiconductor light emitting layer 16, a p-type nitride semiconductor layer 17, a transparent conductive film. 18, the reflection film 19, the p-side electrode 21, and the Au bump 58 are laminated in this order. Furthermore, the stacked body 23 includes an n-side electrode 20 in contact with the n-type nitride semiconductor layer 15 and an Au bump 57 stacked on the n-side electrode 20.
  • a part of the n-type nitride semiconductor layer 15 has a convex shape.
  • the nitride semiconductor light emitting layer 16, the p-type nitride semiconductor layer 17, the transparent conductive film 18, the reflective film 19, the p-side electrode 21, and the Au bump 58 are sequentially stacked on the convex portion of the n-type nitride semiconductor layer 15.
  • the n-side electrode 20 and the Au bump 57 are sequentially stacked on the surface of the n-type nitride semiconductor layer 15 and not on the convex portion, that is, on the portion adjacent to the convex portion. .
  • the crystal-improved nitride semiconductor layer 14 may be undoped or n-type.
  • the reflective film 19 may be a conductive layer such as metal or a dielectric multilayer film.
  • the LED wafer 50 is configured.
  • the material of each layer of the LED wafer 50 described above, the laminated structure, and the like are examples.
  • the LED wafer 50 is divided into a plurality of chips, and a semiconductor wafer in which various semiconductor layers are laminated on a substrate can be used.
  • the polishing apparatus polishes the back surface 50b of the LED wafer 50 described with reference to FIG. 2 (that is, the back surface 10b of the substrate 10). As a result, the entire thickness of the LED wafer 50 is adjusted.
  • the polishing device polishes the back surface 50b of the LED wafer 50 so that the thickness is about 1.2 mm to 120 ⁇ m. Then, the LED wafer 50 whose thickness is adjusted to a desired thickness is transferred to the next scribing process.
  • FIG. 3A is a plan view showing the LED wafer 50 attached to the dividing sheet
  • FIG. 3B is a sectional view of FIG.
  • the operator uses the front surface 50a of the LED wafer 50 whose back surface 50b has been polished in the back surface polishing step M11, in the vicinity of the center of the dividing sheet (scribing sheet) 60 in which the ring 62 is attached to the outer periphery.
  • the LED wafer 50 has a diameter of about 150 mm.
  • a PET film or the like can be used as a material of the dividing sheet 60.
  • a scribing process is performed on the LED wafer 50 from the back surface 50b side opposite to the bonded surface of the LED wafer 50 bonded to the dividing sheet 60.
  • lattice-shaped chip splitting weakened portions 52 that extend in the vertical and horizontal directions are formed.
  • the chip splitting weakened portion 52 is formed on the LED wafer 50 with a depth up to the middle of the LED wafer 50 in the thickness direction.
  • Examples of the method for performing the scribing process include a scribing method using a diamond scriber, a laser scribing method using a laser beam, or a dicing method using a rotating dicing blade.
  • Chip splitting process Next, the chip dividing step M13 will be described with reference to FIG.
  • FIG. 4 is a diagram illustrating a state where the LED wafer 50 is subjected to chip division processing.
  • the blade 60 is disposed on the back surface 60b of the dividing sheet 60 (the surface opposite to the surface on which the LED wafer 50 is disposed) below the chip dividing weakened portion 52 of the LED wafer 50. 64 is brought into strong contact. Thereby, the LED wafer 50 is divided along one direction (for example, the vertical direction) in the chip dividing weakened portion 52 extending in the vertical and horizontal directions. As a result, the divided LED wafer 50 having a long shape can be obtained.
  • the dividing sheet 60 is rotated 90 degrees in the plane direction together with the divided LED wafer 50, and similarly, the rear surface 60 b of the dividing sheet 60, the chip dividing vulnerability of the divided LED wafer 50.
  • the blade 64 is brought into strong contact with the lower portion 52.
  • the LED wafers 50 are divided along the chip dividing weakened portion 52 in the other direction (for example, the horizontal direction) intersecting with the divided direction.
  • the LED chip 55 obtained by dividing the LED wafer 50 can be obtained.
  • a scratch 66 may be attached to a portion of the back surface 60b of the dividing sheet 60 that is in contact with the blade 64. Since the thickness of the dividing sheet 60 is different between the part having the scratch 66 and the other part, when the dividing sheet 60 is expanded as it is, the positions of the plurality of LED chips 55 after the expansion, that is, the plurality of parts Variations occur in the gaps between the LED chips 55. For this reason, in the next reprinting step M14, the plurality of LED chips 55 are transferred from the dividing sheet 60 to the first expanding sheet 70.
  • FIG. 5 is a diagram illustrating a state in which a plurality of LED chips 55 are transferred onto the first expanding sheet 70.
  • a ring 72 is attached to the peripheral portion of the back surface 50b of the LED wafer 50 divided into the plurality of LED chips 55 in the chip dividing step M13, that is, the back surface 55b of the plurality of LED chips 55.
  • the expanding sheet 70 is attached.
  • the dividing sheet 60 bonded to the surface 50a of the divided LED wafer 50, that is, the surfaces 55a of the plurality of LED chips 55 is removed.
  • the LED wafer 50 divided into the plurality of LED chips 55 is transferred (transferred) from the dividing sheet 60 to the first expanding sheet 70 in a lump.
  • the surface to which the plurality of LED chips 55 (divided LED wafers 50) are bonded is referred to as a front surface 70a, and the surface opposite to the front surface 70a is referred to as a back surface 70b.
  • the transfer can be easily performed.
  • the first expanding sheet 70 for example, vinyl chloride or the like can be used.
  • FIG. 6 is a cross-sectional view of the expanding device showing a state in which the first expanding process is performed on the plurality of LED chips 55.
  • the first expanding sheet (expanding sheet) 70 is expanded, and a gap (first gap) S1 is provided between the plurality of LED chips 55 divided in the chip dividing step M13. It is.
  • the plurality of LED chips 55 provided with the gaps S1 are collectively transferred (transferred) to the second expanding sheet (expanding sheet, other expanding sheet) 80. It is also a process.
  • the LED wafer 50 is expanded in two steps.
  • the first expanding step M15 first, the first expanding process is performed on the plurality of LED chips 55. Further, a process for performing an expanding process may be provided, and the expanding process may be performed by dividing the LED wafer 50 into three or more times.
  • the first reason for dividing the expanding process into two times is to adjust the number of times the LED wafer 50 (the plurality of LED chips 55) is transferred.
  • the second reason is that the amount of expansion at one time is reduced by expanding little by little, and the positional deviation of the LED chip 55 accompanying the expansion of the expanding sheet is prevented.
  • the gap may be increased stepwise in the first expanding process M15 and the second expanding process M16
  • the first expanding direction performed in the first expanding step M15 is the X direction (the horizontal direction of the cross-sectional view shown in FIG. 6)
  • the second expanding direction performed in the second expanding step M16 is the Y direction (FIG. 6 in the depth direction of the sectional view shown in FIG.
  • the first expanding sheet 70 on which the plurality of LED chips 55 are transferred in the transferring step M14 is expanded by the expanding device 71.
  • the expanding process performed in the first expanding process M15 is the first expanding process.
  • the expanding device 71 holds a stage 74, a holding portion 73 for holding the ring 72, a control unit (not shown) for controlling the driving of the entire expanding device 71, and a ring 82 for the second expanding sheet. And a holding part 75 for the purpose.
  • the holding portion 73 for holding the ring 72 sandwiches or adsorbs the ring 72 attached to the peripheral portion of the first expanding sheet 70 on which the plurality of LED chips 55 (divided LED wafers 50) are transferred. To hold and fix.
  • the holding part 75 for holding the ring 82 holds the ring 82 attached to the peripheral part of the second expanding sheet 80 by sandwiching or adsorbing the ring 82, and fixes the second expanding sheet 80.
  • the holding unit 75 may be provided in a device different from the expanding device 71.
  • the second expanding sheet 80 is for transferring (transferring) a plurality of LED chips 55 arranged on the first expanding sheet 70 subjected to the first expanding process in a lump.
  • the second expanding sheet 80 is spaced apart from the surface 55a of the plurality of LED chips 55 disposed on the first expanding sheet 70 (the surface 50a of the divided LED wafer 50).
  • the surface facing the surface 55a of the plurality of LED chips 55 (the surface 50a of the divided LED wafer 50) is the surface 80a, and the opposite side surface is the back surface 80b.
  • vinyl chloride or the like can be used as an example, similarly to the first expanding sheet 70.
  • the stage 74 is arranged so as to face the back surface 70b of the first expanding sheet 70. That is, the stage 74 is arranged on the opposite side to the side on which the second expanding sheet 80 is arranged with respect to the first expanding sheet 70.
  • the stage 74 has the first expanding sheet 70 of the first expanding sheet 70 from the back surface 70b side of the first expanding sheet 70 in which the peripheral ring 72 is fixed by the holding unit 73.
  • the first expanding sheet 70 is stretched by pushing an area where a plurality of LED chips 55 (divided LED wafers 50) are arranged.
  • the stage 74 stretches until the first expanding sheet 70 reaches a predetermined size, that is, a predetermined stretching amount, and performs a first expanding process.
  • a predetermined size that is, a predetermined stretching amount
  • the movement of the stage 74 causes the surface 55a of the plurality of LED chips 55 arranged on the first expanding sheet 70 to become the second expanding. It contacts the surface 80a of the sheet 80 for use. Thereby, the surface 55a of the some LED chip 55 and the surface 80a of the 2nd sheet 80 for expansion are affixed.
  • the stretch amount of the first expanding sheet 70 is such that the plurality of LED chips 55 (that is, the LED wafers 50) having a diameter of 150 mm are the first expanded by the first expanding (stretching by the stage 74).
  • the control unit is set so that each of the gaps S1 is arranged in an area of 175 mm in diameter on the sheet 70 for use.
  • the expansion ratio of the first expanding sheet 70 is preferably 140% or less, and more preferably 120% or less.
  • the reason why the expansion ratio of the first expand is preferably 140% or less is as follows.
  • the stretching ratio at which the thickness of the first expanding sheet 70 is 50% is 141% (route 2).
  • the empirical value that the sheet stretching ratio only needs to be 140% or less means that the adhesion between the LED chip 55 and the sheet is stable until the sheet thickness reaches 50%, which seems reasonable.
  • the stretching ratio of the first expanding sheet 70 is 140% or less, more preferably 120% or less, sufficient adhesion between the plurality of LED chips 55 and the first expanding sheet 70 is ensured.
  • the first expanding sheet 70 can be expanded. Thereby, it is possible to prevent the occurrence of defects such as the LED chip 55 being peeled off from the first expanding sheet 70 during the expansion.
  • the first expand preferably has an expansion rate of 105% or more from the viewpoint of opening a plurality of LED chips 55.
  • the expansion ratio of the first expand is set to 105% or more, it is possible to provide a sufficient gap S1 between the plurality of LED chips 55.
  • the plurality of LED chips 55 arranged on the surface 70a of the first expanding sheet 70 are arranged with a gap S1 at regular intervals. Can do.
  • the first expanding sheet 70 is changed to a predetermined one.
  • a gap S ⁇ b> 1 is provided between the plurality of LED chips 55.
  • the first expanding sheet 70 is not damaged due to the division into the plurality of LED chips 5, it is possible to provide an accurate gap S1 between the plurality of LED chips 55. That is, it is possible to prevent positional deviation of each of the plurality of LED chips after the first expanding process.
  • the stage 74 is arranged above the plurality of LED chips 55, It is shown that the first expanding sheet 70 is stretched by moving toward the lower side.
  • the expanding device 71 when a typical expanding device is used as the expanding device 71, the following is more common.
  • the ring 72 is held by the holding portion 73 and fixed to the first expanding sheet 70 so that the surface 70a faces upward (upward in the vertical direction).
  • the stage 74 is positioned below the first expanding sheet 70 fixed to the holding portion 73 (downward in the vertical direction).
  • the stage 74 moves from the lower side to the upper side to contact the back surface 70b of the first expanding sheet 70, and further moves to the upper side to extend the first expanding sheet 70. As a result, the first expanding sheet 70 is stretched, and a gap S1 is provided between the plurality of LED chips 55 on the surface 70a.
  • the configuration and operation of the above-described expanding device 71 are merely examples, and the moving direction of the stage 74 for stretching the first expanding sheet 70 is not particularly limited.
  • the surface 55a of the some LED chip 55 distribute
  • the stage 74 that is brought into contact with and affixed to 80a returns to its original position in response to an instruction from the control unit. Accordingly, the plurality of LED chips 55 arranged on the first expanding sheet 70 are collectively transferred (transferred) from the first expanding sheet 70 to the second expanding sheet 80.
  • the chip adhesive force of the surface 70a of the first expanding sheet 70 is reduced when irradiated with UV light.
  • the first expanding sheet 70 is pushed on the stage 74, and the surface 55a of the plurality of LED chips 55 and the surface 80a of the second expanding sheet 80 are brought into contact with each other.
  • the LED chip 55 can be transferred from the first expanding sheet 70 to the second expanding sheet 80.
  • the adhesive force can be reduced, and examples of a material preferably used as an adhesive for the surface 70a of the first expanding sheet 70 include an acrylic polymer. Can do.
  • the first expansion sheet 70 is expanded and simultaneously transferred to the second expansion sheet 80.
  • the present invention is not limited to this.
  • the step of expanding the first expanding sheet 70 and the step of transferring the plurality of LED chips 55 to the second expanding sheet 80 may be separate steps as follows.
  • the second expanding sheet 80 is not disposed in advance so as to face the first expanding sheet 70, and the first expanding sheet 70 is subjected to an expanding process by the stage 74 (first Expand processing). Then, with the first expanding sheet 70 stretched, a fixing ring 82 is attached to the second expanding sheet 80, and the ring 82 is held and fixed by the holding unit 75.
  • the plurality of LED chips 55 are collectively transferred from the first expanding sheet 70 to the second expanding sheet 80.
  • FIG. 7 is a cross-sectional view of the expanding apparatus showing a state where the second expanding process is performed on the plurality of LED chips 55.
  • the second expanding sheet 80 is expanded, and a plurality of LED chips 55 provided with the gap S1 in the first expanding step M15 are further provided with a gap (second gap) S2. It is a process.
  • the second expanding step M16 is also a step of transferring (transferring) the plurality of LED chips 55 provided with the gaps S2 to the bonding sheet (first bonding sheet) 90 in a lump.
  • the second expanding sheet 80 on which the plurality of LED chips 55 are transferred in the first expanding step M15 is expanded by the expanding device 81.
  • the expanding process performed in the second expanding process M16 is the second expanding process.
  • the expanding device 81 includes a stage 84, a holding unit 83 for holding the ring 82, a control unit (not shown) that controls driving of the entire expanding device 81, and a holding for holding the ring 92 of the heat-resistant sheet. Part 85.
  • the expanding device 81 may be the same device as the expanding device 71 or may be a different device.
  • the holding portion 83 for holding the ring 82 sandwiches or adsorbs the ring 82 attached to the peripheral portion of the second expanding sheet 80 on which the plurality of LED chips 55 (divided LED wafers 50) are transferred. To hold and fix.
  • the holding part 85 for holding the ring 92 holds the ring 92 sandwiched or adsorbed to the peripheral edge of the bonding sheet 90 and fixes the bonding sheet 90.
  • the holding unit 85 may be provided in a device different from the expanding device 81.
  • the bonding sheet 90 is for collectively transferring (transferring) the plurality of LED chips 55 arranged on the second expanding sheet 80 subjected to the second expanding process.
  • the bonding sheet 90 is spaced apart from the back surfaces 55b of the plurality of LED chips 55 disposed on the second expanding sheet 80 (the back surface 50b of the divided LED wafer 50).
  • the surface facing the back surface 55b of the plurality of LED chips 55 is the front surface 90a
  • the opposite side surface is the back surface 90b.
  • the bonding sheet 90 is a heat-resistant sheet made of a heat-resistant material.
  • a urethane acrylate film, a vinyl chloride film or a polyester film is preferably used as a base material, and an acrylic polymer or a urethane polymer is used as an adhesive provided on the base material. It is preferable.
  • the base material of the heat-resistant sheet it is preferable to use a urethane acrylate film (thickness 160 ⁇ m), and it is preferable to use an acrylic polymer (thickness 20 ⁇ m) as the pressure-sensitive adhesive of the heat-resistant sheet.
  • the stage 84 is arranged to face the back surface 80b of the second expanding sheet 80. That is, the stage 84 is disposed on the opposite side to the side on which the bonding sheet 90 is disposed with respect to the second expanding sheet 80.
  • the stage 84 is configured such that the second expanding sheet 80 is provided from the back surface 80b side of the second expanding sheet 80 in which the peripheral ring 82 is fixed by the holding unit 83.
  • the second expanding sheet 80 is stretched by pushing an area where a plurality of LED chips 55 (divided LED wafers 50) are arranged.
  • the stage 84 is stretched until the second expanding sheet 80 reaches a predetermined stretching amount, and the second expanding process is performed.
  • the second expanding sheet 80 is stretched to a predetermined stretching amount
  • the back surface 55b of the plurality of LED chips 55 arranged on the second expanding sheet 80 is bonded to the bonding sheet by the movement of the stage 84.
  • the surface 90a of 90 is contacted. Thereby, the back surface 55b of the some LED chip 55 and the surface 90a of the sheet
  • the second expanding sheet 80 is stretched by a plurality of LED chips 55 (that is, divided LED wafers 50) having a diameter of 175 mm by the second expanding (stretching by the stage 84).
  • the area on the second expanding sheet 80 is set in the control unit so as to be arranged with a gap S2 so as to have a diameter of 200 mm.
  • the second expansion sheet 80 is secured while ensuring sufficient adhesion between the plurality of LED chips 55 and the second expansion sheet 80 by setting the expansion ratio of the second expansion to 140% or less. Can be expanded. Thereby, it is possible to prevent the occurrence of defects such as the LED chip 55 being peeled off from the second expanding sheet 80 during the expansion.
  • the expansion ratio of the second expand to 105% or more, it is possible to provide a sufficient gap S ⁇ b> 2 between the plurality of LED chips 55.
  • the plurality of LED chips 55 arranged on the surface 80a of the second expanding sheet 80 are arranged with a gap S2 at regular intervals. Can do.
  • the pasted stage 84 returns to the original position according to an instruction from the control unit. Thereby, the plurality of LED chips 55 arranged on the second expanding sheet 80 are collectively transferred (transferred) from the second expanding sheet 80 to the bonding sheet 90.
  • the chip adhesive strength of the surface 80a of the second expanding sheet 80 is reduced when irradiated with UV light.
  • the second expanding sheet 80 is pushed on the stage 84, the surface 55 a of the plurality of LED chips 55 and the surface 90 a of the bonding sheet 90 are brought into contact with each other, and the plurality of LEDs are simply returned to their original positions.
  • the chip 55 can be transferred from the second expanding sheet 80 to the laminating sheet 90.
  • the plurality of LED chips 55 provided with the gap S2 are collectively transferred from the second expanding sheet 80 to the laminating sheet 90.
  • each of the plurality of LED chips 55 after the second expansion has few positional deviations and good positional accuracy, and therefore can be collectively transferred from the second expanding sheet 80 to the bonding sheet 90. .
  • the manufacturing process can be shortened.
  • the second expanding sheet 80 is expanded to a predetermined size, and a gap S2 is provided between the plurality of LED chips 55, and the plurality of LED chips 55 are transferred to the bonding sheet 90, whereby the bonding sheet is obtained. Therefore, it is not necessary to provide a separate process for transferring to 90, and the number of manufacturing processes can be reduced.
  • the second expanding sheet 80 has been expanded to be transferred to the laminating sheet 90 at the same time, but is not limited thereto. .
  • the step of expanding the second expanding sheet 80 and the step of transferring the plurality of LED chips 55 to the bonding sheet 90 may be separate steps as follows.
  • the pasting sheet 90 is not disposed opposite to the second expanding sheet 80 in advance, and the second expanding sheet 80 is subjected to an expanding process by the stage 84 (second expanding processing). Then, with the second expanding sheet 80 stretched, a fixing ring 92 is attached to the laminating sheet 90, and the ring 82 is held and fixed by the holding unit 85.
  • the plurality of LED chips 55 are collectively transferred from the second expanding sheet 80 to the bonding sheet 90.
  • the plurality of LED chips 55 provided with the gaps are indirectly bonded to the bonding sheet 90 from the first expanding sheet 70.
  • the plurality of LED chips 55 with gaps are temporarily transferred from the first expanding sheet 70 to the second expanding sheet 80, which is another functional sheet, and the second expanding A plurality of LED chips 55 are bonded from the sheet 80 to the bonding sheet 90.
  • the second LED chip 55 is different from the dividing sheet 60. Since the first expanding sheet 70 is expanded after being transferred to the first expanding sheet 70, it can be expanded with high accuracy, and the positions of the plurality of LED chips 55 after being transferred from the first expanding sheet 70 are expanded. Matching is not required. Therefore, a plurality of LED chips 55 and a submount wafer (opposite wafer) 100 described later can be bonded with high accuracy, and a method for manufacturing a semiconductor device with few defective products can be obtained.
  • the plurality of LED chips 55 are temporarily transferred from the first expanding sheet 70 to a functional sheet having a different function instead of the second expanding sheet 80 and then transferred to the bonding sheet 90. May be. Since it is not necessary to align the plurality of LED chips 55 after being transferred from the first expanding sheet 70, the same effect can be obtained.
  • the plurality of LED chips 55 provided with the gaps are indirectly bonded to the bonding sheet 90 from the first expanding sheet 70.
  • the plurality of LED chips 55 with gaps are temporarily transferred from the first expanding sheet 70 to the second expanding sheet 80, which is another functional sheet, and the second expanding A plurality of LED chips 55 are bonded from the sheet 80 to the bonding sheet 90.
  • the plurality of LED chips 55 may be directly bonded to the bonding sheet 90 without being bonded from the first expanding sheet 70 to the second expanding sheet 80. Thereby, a plurality of LED chips 55 and a submount wafer (opposite wafer) 100 described later can be bonded with high accuracy, and the number of processes can be reduced.
  • FIG. 8 is a cross-sectional view of each substrate showing a state in which a plurality of LED chips 55 are bonded to a submount wafer (opposing wafer) 100.
  • the bonding sheet (second bonding sheet) 110 and the submount wafer 100 bonded to the surface 110a of the bonding sheet 110 are arranged.
  • a fixing ring 112 is attached to the periphery of the surface 110a of the bonding sheet 110.
  • the back surface 110b is opposite to the front surface 110a on which the submount wafer 100 is bonded.
  • the bonding sheet 110 is a heat-resistant sheet made of a heat-resistant material.
  • the bonding sheet 110 is preferably made of the same material as the bonding sheet 90.
  • the surface that is bonded to the bonding sheet 110 is the back surface 100b, and the opposite side surface to the back surface 100b is the front surface 100a, that is, the chip mounting surface.
  • the submount wafer 100 is made of Si (silicon).
  • the surfaces 55a of the plurality of LED chips 55 transferred on the bonding sheet 90 in the second expanding step M16 are arranged above the surface 100a of the submount wafer 100 so as to face each other.
  • the surface 55a of the plurality of LED chips 55 and the surface 100a of the submount wafer 100 come into contact with each other, and the plurality of LED chips 55 are bonded together to the submount wafer 100 at once. That is, the plurality of LED chips 55 transferred on the bonding sheet 90 are directly bonded to the submount wafer 100.
  • the plurality of LED chips 55 transferred to the bonding sheet 90 are less misaligned, the plurality of LED chips 55 and the submount wafer 100 can be bonded with high accuracy, and the occurrence of defective products can be prevented. be able to.
  • n-p side electrodes are arranged for each submount (for each region where each LED chip 55 is bonded). Then, by bonding each LED chip 55 to the surface 100 a of the submount wafer 100, the n ⁇ p-side electrode of the surface 100 a of the submount wafer 100 and the Au of the surface of the LED chip 55 are provided for each submount.
  • the bumps 57 and 58 come into contact with each other. This specific structure will be described later with reference to FIG.
  • a weight 95 is placed on the back surface 90b of the bonding sheet 90. Then, the entire substrate (the weight 95, the bonding sheet 90, the plurality of LED chips 55, the submount wafer 100, and the bonding sheet 110) including the ring 92 and the ring 112 is placed in an oven, and is heated at 200 ° C. Heating for a minute, the surface 55a of the plurality of LED chips 55 and the surface 110a (chip mounting surface) of the submount wafer 100 are bonded.
  • the bonding sheet 90 is peeled off from the plurality of LED chips 55, and the bonding sheet 110 is peeled off from the submount wafer 100.
  • the submount wafer 100 in which the plurality of LED chips 55 are bonded together on the surface 100a that is, the chip mounting surface
  • the bonding sheet 110 is a heat-resistant sheet like the bonding sheet 90 and is preferably made of the same material as the bonding sheet 90. That is, for the bonding sheet 110, it is preferable to use a material having a material characteristic that does not cause deformation and degassing up to 300 degrees Celsius under heating conditions in the bonding step M17.
  • both the bonding sheets 90 and 110 from a heat-resistant material, the surface 55a of the plurality of LED chips 55 that are heated and bonded to each other and the surface 110a of the submount wafer 100 are combined. Then, each of the bonding sheets 90 and 110 can be removed. For this reason, the defect accompanying bonding can be prevented.
  • a urethane acrylate film, a vinyl chloride film or a polyester film is preferably used as a base material, and an acrylic polymer or a urethane polymer is used as an adhesive provided on the base material. It is preferable.
  • a urethane acrylate film (thickness: 160 ⁇ m) as the base material of the heat-resistant sheet constituting the laminating sheet 110, and an acrylic polymer (thickness: 20 ⁇ m) is used as the pressure-sensitive adhesive for the heat-resistant sheet. preferable.
  • the plurality of LED chips 55 are collectively bonded to the submount wafer 100 in the bonding step M17.
  • the surfaces 90a and 110a of the bonding sheets 90 and 110 are irradiated with UV light, and the adhesive on the surface 90a of the bonding sheet 90 and the surface 110a of the bonding sheet 110 is cured. .
  • the illuminance is less than 150 mW / cm 2 or the light amount of 300 mJ / cm 2
  • the adhesive may not be cured sufficiently.
  • the illuminance is greater than 250 mW / cm 2 or the light amount of 500 mJ / cm 2 , the temperature is too high.
  • the adhesive may become soft and cause problems.
  • the acrylic polymer as the pressure-sensitive adhesive on the surfaces 90a and 110a of the bonding sheets 90 and 110 is once cured, and the adhesive
  • the adhesive strength of the agent is about 1/20.
  • the bonding sheet 90 is attached to the plurality of LEDs so as not to generate adhesive residue or impurity residue on the back surface 55b of the plurality of LED chips 55 or the back surface 100b of the submount wafer 100.
  • the bonding sheet 110 can be easily peeled from the back surface 55 b of the chip 55 and the back surface 100 b of the submount wafer 100.
  • the adhesive force of the front surface 90a to the back surface 55b of the plurality of LED chips 55 and the adhesive force of the front surface 110a to the submount wafer 100 are changed from 420 to 680 [g / 25 mm 2 ] to 10 to 40 [ g / 25 mm 2 ] (ie, from 550 [g / 25 mm 2 ] ⁇ 25 [g / 25 mm 2 ] to 25 ⁇ 15 [g / 25 mm 2 ]).
  • the heat-resistant limit temperature of the bonding sheets 90 and 110 is 300 degrees Celsius, if the heating temperature in the bonding process M17 is 250 ° C., there is a concern about degassing from the bonding sheets 90 and 110. There is no need to do.
  • the bonding sheets 90 and 110 which are heat-resistant sheets, are adhered to the LED chips 55 and the submount wafer 100, respectively, and the bonding sheets 90 and 110 are used as support materials, respectively, and the heat-resistant temperature (300 degrees Celsius).
  • the plurality of LED chips 55 and the submount wafer 100 can be bonded to each other at a lower temperature (for example, 200 degrees Celsius).
  • FIG. 9 is a cross-sectional view of each substrate showing a state in which a plurality of LED chips 55 are sealed in the sealing step.
  • a resin 115 serving as an underfill is first applied to the surface 100a of the submount wafer 100 on which the plurality of LED chips 55 are bonded together.
  • the resin 115 that is an underfill has a function of covering the surface 55 a that is a contact surface of the plurality of LED chips 55 with the submount wafer 100.
  • the resin 115 is applied and solidified so that the back surfaces 55b of the plurality of LED chips 55 are exposed. That is, the resin 115 is formed between the plurality of LED chips 55 on the surface 100 a of the submount wafer 100.
  • the sealing resin 120 is formed on the plurality of LED chips 55 and the resin 115 so as to cover the back surfaces 55b of the plurality of LED chips 55 on the submount wafer 100.
  • the plurality of LED chips 55 and the resin 115 are sealed by the sealing resin 120.
  • the sealing resin 120 Since the sealing resin 120 is in a liquid state before curing, it can be formed by a spin coating method or the like. In that case, the surface of the sealing resin 120 is flat. On the other hand, the sealing resin may be put into a mold and formed into an arbitrary shape such as a dome shape as shown in FIG. The surface of the sealing resin 120 is a surface on the side opposite to the surface where the sealing resin 120 is in contact with the resin 115 and exposed to the outside.
  • the functions of the resin 115 and the sealing resin 120 may be combined with one resin (that is, the resin 115 may be omitted). Furthermore, the sealing resin 120 that covers the back surfaces 55b of the plurality of LED chips 55 may be multilayered.
  • the sealing resin 120 It is preferable to mix phosphor in the sealing resin 120.
  • the short wavelength light emitted from the plurality of LED chips 55 is converted into relatively long wavelength light by the phosphor, and the plurality of LED chips 55 such as white are converted. It can be made into the light of a wavelength different from the light emitted from.
  • FIG. 10 is a cross-sectional view showing the configuration of a flip-chip LED element (semiconductor device) 150 divided for each submount.
  • the submount wafer 100 in which the plurality of LED chips 55 is sealed in the sealing step M18 is divided into a plurality of submounts 105 (that is, each LED chip 55) by a technique such as dicing. A plurality of fragmented flip chip LED elements 150 are obtained.
  • the flip-chip LED element 150 includes a submount 105, an n-side electrode 107U and a p-side electrode 108U disposed on the upper surface of the submount 105, and an n-side electrode 107L and a p-side electrode 108L disposed on the lower surface of the submount 105.
  • the LED chip 55 disposed opposite to the submount 105, the resin 115 that seals between the submount 105 and the LED chip 55, and the seal that covers the back surface 55b of the LED chip 55 and seals the LED chip 55. Resin 120.
  • an n-side electrode 107L is arranged along one end of the submount 105, and along the other end, A p-side electrode 108L is disposed.
  • the n-side electrode 107L and the p-side electrode 108L are arranged apart from each other.
  • an n-side electrode 107U is disposed along one end portion of the submount 105, and a p-side electrode 108U is disposed along the other end portion. Is arranged. The n-side electrode 107U and the p-side electrode 108U are spaced apart.
  • the n-side electrode 107U and the n-side electrode 107L are connected through a through hole formed in the submount 105.
  • the p-side electrode 108U and the p-side electrode 108L are connected through a through hole formed in the submount 105.
  • the Au bumps 57 of the LED chip 55 are in contact with each other on the n-side electrode 107U, and the Au bumps 58 of the LED chip 55 are in contact with each other on the p-side electrode 108U.
  • the resin 115 includes Au bumps 57 and 58 and n-side electrodes 107U and p-side electrodes 108U, and seals between the surface 55a of the LED chip 55 and the surface 105a of the submount 105 that is the opposite surface of the surface 55a. , Protecting.
  • the sealing resin 120 is disposed so as to cover the entire LED chip 55 including the back surface 55 b of the LED chip 55, and seals the LED chip 55.
  • the submount 105 has been described as being Si in this embodiment, the submount 105 is not limited to this, and is composed of a ceramic such as LTCC (Low Temperature Co-fired Ceramics) or alumina alone. May be. Furthermore, you may comprise from low price resin or the metal excellent in heat dissipation.
  • LTCC Low Temperature Co-fired Ceramics
  • This embodiment is different from the first embodiment in that the expanding sheet is also used as a laminating sheet.
  • FIG. 11 is a diagram illustrating the flow of the manufacturing process of the semiconductor device according to the second embodiment.
  • the backside polishing step M11, the scribe step M12, and the chip dividing step M13 are performed to change the LED chips 50 arranged on the dividing sheet 60 from the LED wafer 50 shown in FIG. A divided LED wafer 50 is obtained. Then, the plurality of LED chips 55 arranged on the dividing sheet 60 are moved to the reprinting process M34.
  • FIG. 12 is a diagram showing a state in which a plurality of LED chips 55 are transferred to the expanding sheet.
  • the first expanding use is performed on the back surface 50b of the LED wafer 50 divided into the plurality of LED chips 55 in the chip dividing process M13, that is, on the back surface 55b of the plurality of LED chips 55.
  • the sheet 90 for bonding is bonded instead of the sheet 70.
  • the dividing sheet 60 bonded to the surface 50a of the divided LED wafer 50, that is, the surfaces 55a of the plurality of LED chips 55 is removed.
  • the LED wafer 50 divided into the plurality of LED chips 55 is transferred (transferred) from the dividing sheet 60 to the bonding sheet 90 in a lump.
  • a surface to which a plurality of LED chips 55 (divided LED wafers 50) are bonded is referred to as a front surface 90a, and a surface opposite to the front surface 90a is referred to as a back surface 90b.
  • the laminating sheet 90 also functions as an expanding sheet.
  • the adhesive strength of the bonding sheet 90 is preferable to make the adhesive strength of the bonding sheet 90 stronger than the adhesive strength of the dividing sheet 60. This is because the plurality of LED chips 55 can be easily transferred from the dividing sheet 60 to the bonding sheet 90.
  • the bonding sheet 90 on which the plurality of LED chips 55 are transferred is moved to the expanding step M35.
  • FIG. 13 is a cross-sectional view illustrating a state after expansion of the bonding sheet 90 on which the plurality of LED chips 55 are reprinted.
  • the bonding sheet 90 on which the plurality of LED chips 55 have been transferred in the transfer process M34 is expanded.
  • This expanding process is performed by the expanding device 71 as in the first embodiment. That is, the bonding sheet 90 is fixed by fixing the ring 92 with the holding portion 73, and the bonding sheet 90 is stretched by pressing the stage 74 from the back surface 90 b side of the bonding sheet 90.
  • the expansion amount is such that a plurality of LED chips 55 (that is, the LED wafers 50) having a diameter of 150 mm are arranged in the region of 200 mm in diameter on the bonding sheet 90 by opening the gaps S3.
  • the control unit is set.
  • the bonding sheet 90 expanded in the expanding step M35.
  • it moves to the bonding process M17 and is bonded to the submount wafer 100.
  • the flip-chip LED element 150 can be obtained by passing through the sealing process M18 and the separation process M19.
  • the plurality of LED chips provided with the gaps S3 can be bonded together from the bonding sheet 90 to the submount wafer 100. This is because a gap S3 is provided between the plurality of LED chips by expanding a bonding sheet 90 different from the dividing sheet 60. For this reason, there is little position shift of the LED chip 55 after expansion, and it can be bonded directly and collectively from the bonding sheet 90 to the submount wafer 100. Thereby, the number of manufacturing processes can be reduced.
  • This embodiment is different from the first and second embodiments in that the substrate 10 is removed after the plurality of LED chips 55 are bonded together.
  • FIG. 14 is a diagram illustrating the flow of the manufacturing process of the semiconductor device according to the third embodiment.
  • the submount wafer 100 in which a plurality of LED chips 55 are bonded together on the front surface 100a is obtained through the back surface polishing step M11 to the bonding step M17 in order. Then, the submount wafer 100 is moved to the resin coating step M41.
  • FIG. 15 is a cross-sectional view of each substrate showing an underfill formed on the surface of the submount wafer 100 in the resin coating process.
  • a resin 115 serving as an underfill is applied to the surface 100a of the submount wafer 100 on which the plurality of LED chips 55 are bonded together.
  • the resin 115 which is an underfill has a function of covering the surface 55 a which is a contact surface of the plurality of LED chips 55 with the submount wafer 100.
  • the resin 115 is applied and solidified so as to expose the back surface 55b without covering the back surface 55b of the plurality of LED chips 55. That is, the resin 115 is formed between the plurality of LED chips 55 on the surface 100 a of the submount wafer 100.
  • the resin 115 may cover the entire surface 100a of the submount wafer 100. This is preferable because damage to the submount wafer 100 in an etching process described later can be reduced.
  • the submount wafer 100 in which the resin 115 as the underfill is between the plurality of LED chips 55 and formed on the surface 100a is then transferred to the substrate removal step M42.
  • FIG. 16 is a cross-sectional view of each substrate showing a state after the substrate 10 is removed from the plurality of LED chips in the substrate removing step.
  • FIG. 15 and FIG. 16 show the state before and after the substrate 10 is removed from the plurality of LED chips in the substrate removal step.
  • the resin 115 provided in the resin coating step M41 covers the space between the plurality of LED chips 55B.
  • the substrate 10 is collectively removed by etching from the plurality of LED chips 55 arranged on the surface 100a of the submount wafer 100 using an etching solution.
  • the substrate 10 is removed from the LED chip 55, and the LED chip 55 ⁇ / b> B having a configuration including the laminate 23 is obtained.
  • the substrate 10 may be completely removed or a part thereof may be left.
  • the substrate removal step M42 since it is necessary to efficiently etch the relatively thick substrate 10, for example, wet etching using an etchant such as phosphoric acid is preferable, but dry etching may be used.
  • an etchant such as phosphoric acid
  • the submount wafer 100 on which the plurality of LED chips 55B are thus obtained is then transferred to the sealing step M43.
  • FIG. 17 is a cross-sectional view of each substrate showing a state in which a plurality of LED chips are sealed in the sealing step.
  • the back surface 55c of the plurality of LED chips 55B (which is the opposite surface of the submount wafer 100) is added to the submount wafer 100 on which the plurality of LED chips 55B are arranged, which is obtained in the substrate removal step M42.
  • the sealing resin 120 is formed on the plurality of LED chips 55 ⁇ / b> B and the resin 115. The sealing resin 120 seals the plurality of LED chips 55B and the resin 115.
  • the submount wafer 100 in which the plurality of LED chips 55B are sealed with the sealing resin 120 is then moved to the separation step M19.
  • the flip-chip LED element 150B can be obtained through the separation step M19.
  • FIG. 18 is a cross-sectional view showing the configuration of the flip-chip LED element 150B divided for each submount.
  • the flip chip LED element 150B has a configuration in which the LED chip 55B is arranged instead of the LED chip 55 from the flip chip LED element 150.
  • Other configurations of the flip chip LED element 150B are the same as those of the flip chip LED element 150.
  • the substrate 10 is removed from the LED chip 55 in the substrate removal step M42 in the submount state after the flip chip batch bonding in the bonding step M17.
  • the flip chip LED element 150B is obtained.
  • the substrate 10 is completely removed, or at least a part of the substrate 10 is removed, so compared to the flip-chip LED element 150 that leaves the substrate 10 as it is, Total reflection at the interface on the light extraction side of the laminate 23 can be reduced.
  • the light extraction efficiency can be increased. That is, a semiconductor device with high light use efficiency can be obtained.
  • a method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device in which a semiconductor wafer is divided into a plurality of semiconductor chips, and the semiconductor device is obtained from the semiconductor chips.
  • a step of dividing a semiconductor wafer arranged on the sheet into a plurality of semiconductor chips, a step of transferring the divided semiconductor chips to an expanding sheet different from the dividing sheet, and a plurality of semiconductor chips being transferred The expanding sheet is expanded to a predetermined size, and a gap is provided between the plurality of semiconductor chips.
  • the plurality of divided semiconductor chips are transferred to an expanding sheet different from the dividing sheet, By expanding the sheet for expanding to a predetermined size, a gap is provided between the plurality of semiconductor chips.
  • the plurality of semiconductor chips provided with the gaps can be bonded to the counter wafer in a batch with high accuracy. it can. For this reason, it is possible to obtain a method for manufacturing a semiconductor device with good bonding accuracy, low cost, and low occurrence of defects.
  • the plurality of semiconductor chips provided with the gaps are collectively transferred from the expanding sheet to the bonding sheet directly or indirectly, and the plurality of semiconductor chips transferred to the bonding sheet are It is preferable to bond to the counter wafer.
  • each of the plurality of semiconductor chips after expansion has few positional deviations and good positional accuracy, so that it is transferred from the expanding sheet directly to the laminating sheet in a lump and no alignment is required thereafter. is there. For this reason, the time of the manufacturing process can be shortened. Then, by bonding the plurality of semiconductor chips transferred on the bonding sheet to the counter wafer, a semiconductor device can be obtained thereafter. Since there are few misalignments of the plurality of semiconductor chips transferred to the bonding sheet, it is possible to bond the plurality of semiconductor chips and the counter wafer with high accuracy, and to manufacture a semiconductor device with less generation of defective products. You can get the method.
  • the manufacturing process time can be shortened, a plurality of semiconductor chips and the counter wafer can be bonded with high accuracy, and a method for manufacturing a semiconductor device with few defective products can be obtained.
  • the plurality of semiconductor chips provided with the gaps are bonded together from the expanding sheet to the counter wafer. According to the above configuration, since the positional deviation of the semiconductor chip after expansion is small, the expansion sheet can be directly and collectively bonded to the counter wafer. Thereby, the number of manufacturing processes can be reduced.
  • the expansion ratio of the expanding sheet when expanding is 140% or less. Thereby, it can expand, ensuring sufficient adhesion.
  • a gap is provided between the plurality of semiconductor chips, and the plurality of semiconductor chips can be transferred to another expanding sheet or a bonding sheet.
  • the plurality of semiconductor chips can be transferred to another expanding sheet or a bonding sheet.
  • the semiconductor chip includes a substrate and a stacked body stacked on the substrate, and includes a step of removing the substrate after the semiconductor chip is bonded to the counter wafer.
  • the bonding sheet is preferably made of a heat resistant material.
  • the bonding sheet can be removed after heating and curing the plurality of semiconductor chips and the counter wafer that are bonded to each other. For this reason, the defect accompanying bonding can be prevented.
  • the semiconductor chip from an LED chip as a specific form of the semiconductor chip, a semiconductor device divided for each semiconductor chip can be obtained.
  • the present invention can be used in a method for manufacturing a semiconductor device.

Abstract

La présente invention comprend une étape de découpage de puce en dés (M13) consistants à découper une tranche (50) à DEL en dés sur une feuille de découpage en dés (60) pour obtenir une pluralité de puces de DEL (55), une étape de transfert (M14) consistant à transférer les puces de DEL découpées en dés sur une autre première feuille de dilatation (70), et une première étape de dilatation (M15) consistant à dilater la première feuille de dilatation et à former des espaces (S1) entre les puces de DEL, ce qui empêche la modification des positions des puces semi-conductrices après la dilatation de la feuille.
PCT/JP2013/057516 2012-06-29 2013-03-15 Procédé de fabrication d'un dispositif semi-conducteur WO2014002535A1 (fr)

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US20160111604A1 (en) * 2014-10-20 2016-04-21 PlayNitride Inc. Method for expanding spacings in light-emitting element array and light-emitting element array unit
JP2016127116A (ja) * 2014-12-26 2016-07-11 リンテック株式会社 半導体装置の製造方法
JP2016127115A (ja) * 2014-12-26 2016-07-11 リンテック株式会社 半導体装置の製造方法
JP2016146413A (ja) * 2015-02-06 2016-08-12 リンテック株式会社 半導体装置の製造方法
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CN108807201A (zh) * 2017-05-03 2018-11-13 叶秀慧 用于防止印刷电路板及晶圆对接时因热膨胀产生扭曲的方法及结构
CN110201893A (zh) * 2019-05-06 2019-09-06 山东泓瑞光电科技有限公司 一种led晶片自动分选机用清洗头组件
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JP2016025164A (ja) * 2014-07-17 2016-02-08 関根　弘一 固体撮像装置及びその製造方法
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JP2016127115A (ja) * 2014-12-26 2016-07-11 リンテック株式会社 半導体装置の製造方法
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EP3886173A4 (fr) * 2018-11-21 2022-09-21 Seoul Viosys Co., Ltd Dispositif électroluminescent et module électroluminescent le comprenant
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CN110201893A (zh) * 2019-05-06 2019-09-06 山东泓瑞光电科技有限公司 一种led晶片自动分选机用清洗头组件

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