WO2013183260A1 - 薬液処理装置 - Google Patents

薬液処理装置 Download PDF

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Publication number
WO2013183260A1
WO2013183260A1 PCT/JP2013/003410 JP2013003410W WO2013183260A1 WO 2013183260 A1 WO2013183260 A1 WO 2013183260A1 JP 2013003410 W JP2013003410 W JP 2013003410W WO 2013183260 A1 WO2013183260 A1 WO 2013183260A1
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WO
WIPO (PCT)
Prior art keywords
chemical
substrate
etching
processed
ceiling
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Application number
PCT/JP2013/003410
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English (en)
French (fr)
Japanese (ja)
Inventor
亮 村田
Original Assignee
シャープ株式会社
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Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to CN201380019935.8A priority Critical patent/CN104246988B/zh
Priority to JP2014519825A priority patent/JP5890018B2/ja
Publication of WO2013183260A1 publication Critical patent/WO2013183260A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to a chemical processing apparatus that performs chemical processing on the surface of a substrate that constitutes a display panel, and particularly relates to countermeasures for defective chemical processing caused by dropping of aggregated droplets from the ceiling of a processing tank.
  • a chemical solution sprayed from a shower nozzle is sprayed on the substrate surface to perform a predetermined chemical solution treatment. Has been done.
  • a substrate transport device that transports a substrate to be processed in a horizontal direction is provided in a chemical processing tank, and an upper surface of a substrate transported by the substrate transport device.
  • a substrate processing apparatus having a configuration in which an upper spray nozzle for supplying a chemical liquid to the lower spray nozzle and a lower spray nozzle for supplying a chemical liquid to the lower surface of the substrate is disclosed.
  • the chemical liquid supplied from the lower spray nozzle is laterally applied to the chemical liquid supplied from the upper spray nozzle by inclining the chemical blowing direction of the lower spray nozzle with respect to the lower surface of the substrate to be processed.
  • the generation of splashes due to the interference between the chemical liquids is suppressed, and adhesion of water droplets to the processing tank ceiling is prevented.
  • Patent Document 1 cannot prevent the chemical solution from being scattered and misted, so that the chemical solution splashes (small droplets) are prevented from adhering to the processing tank ceiling where the chemical solution is not directly applied.
  • the droplets of chemicals adhering to the processing tank ceiling are concentrated by evaporation of water, and aggregated by various sensors, piping, and other irregularities on the ceiling to form high-concentration droplets on the surface of the substrate to be processed. Will fall.
  • the chemical solution is an etching solution
  • an abnormality in the etching rate occurs at the location where the aggregated droplets are dropped, and the etching process becomes non-uniform, causing a defective display panel.
  • the chemical liquid is a cleaning liquid made of an acidic liquid or an alkaline liquid
  • the surface of the substrate to be processed may be partially oxidized or corroded to be damaged.
  • the present invention has been made in view of such a point, and the object of the present invention is to prevent the occurrence of defective chemical processing due to the dropping of the condensed liquid droplets from the ceiling of the processing tank, and to the substrate to be processed. There is a good chemical treatment.
  • chemical liquid is also supplied to the ceiling of the processing tank so that the droplets of the chemical liquid adhering to the ceiling of the processing tank are not concentrated by evaporation of water, and promptly generate agglomerated droplets. I tried to drop it.
  • the present invention is directed to a chemical processing apparatus that performs chemical processing on a surface to be processed of a substrate to be processed, and has taken the following solutions.
  • the first invention is A chemical treatment tank into which the substrate to be treated is carried; A transport means for transporting the substrate to be processed carried into the chemical treatment tank toward the ceiling side of the chemical treatment tank; Chemical solution spraying means for spraying a chemical solution against the processing surface of the substrate to be processed conveyed by the conveying means, The chemical solution spraying means sprays the chemical solution also on the ceiling of the chemical solution treatment tank.
  • the chemical solution spraying means is configured to spray the chemical solution also on the ceiling of the chemical solution treatment tank. If the chemical solution is sprayed onto the ceiling of the chemical treatment tank during the chemical treatment by this chemical spraying means, even if the spray of chemical solution adheres to the ceiling of the chemical treatment tank due to the scattering or mist of the chemical produced by the chemical treatment of the substrate to be processed, Before the droplets are concentrated by evaporation of moisture, the droplets are mixed with the chemical solution supplied to the ceiling of the chemical solution treatment tank and quickly aggregate and fall by its own weight.
  • 2nd invention is the chemical
  • the ceiling surface of the chemical treatment tank is formed horizontally.
  • the ceiling surface of the chemical treatment tank is horizontal. Since the chemical liquid sprayed by the chemical spraying means on the horizontal ceiling surface in this way aggregates and falls at a plurality of randomly dispersed locations, there is a problem that is a concern when the falling locations of the aggregated droplets are locally biased For example, when the chemical solution is an etching solution, it is possible to avoid the deterioration of the etching rate or the in-plane uniformity of the patterning shape.
  • 3rd invention is the chemical
  • the ceiling of the chemical treatment tank is provided so that existing structures protrude,
  • the chemical solution spraying means sprays the chemical solution onto the existing structure.
  • the chemical solution is sprayed onto the existing structure provided on the ceiling of the chemical solution treatment tank by the chemical solution spraying means, the droplets of the chemical solution adhering to the existing structure in which the condensed droplets are likely to fall are removed. It can be quickly dropped as agglomerated droplets before concentration. As a result, it is possible to effectively prevent occurrence of defects in the chemical processing due to the fall of the concentrated aggregated droplets.
  • a fourth invention is the chemical treatment apparatus according to any one of the first to third inventions,
  • the chemical solution spraying means has a liquid supply pipe for supplying a chemical solution and a blowout port provided in the liquid supply pipe and directed downward, and a plurality of chemical solutions are sprayed from the blowout port onto the surface to be processed of the substrate to be processed.
  • a first shower nozzle and a plurality of second shower nozzles that are provided in the liquid supply pipe and have an upwardly directed air outlet and spray the chemical liquid from the air outlet to the ceiling of the chemical liquid treatment tank.
  • the operational effects of the first aspect of the invention can be obtained effectively. Furthermore, since the 1st shower nozzle and the 2nd shower nozzle are connected to the same liquid feeding piping, compared with the case where these 1st shower nozzle and 2nd shower nozzle are connected to the separate liquid feeding piping.
  • the piping system can be simplified.
  • the chemical solution spraying means includes a first liquid supply pipe and a second liquid supply pipe for supplying a chemical liquid, and a blowout opening provided in the first liquid supply pipe and directed downward from the blowout opening to the substrate to be processed.
  • the second shower nozzle is provided.
  • the operational effects of the first aspect of the invention can be obtained effectively. Furthermore, since the first shower nozzle and the second shower nozzle are connected to separate liquid feeding pipes, the chemical solution blowing operation of these shower nozzles can be controlled independently. When the first shower nozzle and the second shower nozzle are connected to the same liquid supply pipe, these shower nozzles simultaneously blow out the chemical solution, which is difficult to control and it is difficult to adjust individual flow rates. On the other hand, according to the present invention, the chemical solution blowing operation of the second shower nozzle is controlled separately from the chemical solution blowing operation of the first shower nozzle, and the second shower nozzle can be operated such as intermittent operation.
  • 6th invention is the chemical
  • the liquid supply pipe is connected to the main pipe extending along the transfer direction of the substrate to be processed, and is connected to the main pipe at a predetermined interval in the transfer direction of the substrate to be processed from the main pipe to the substrate to be processed.
  • a plurality of branch pipes projecting in a direction intersecting the transport direction of A plurality of the first shower nozzles and the second shower nozzles are provided in the branch pipes at predetermined intervals along the projecting direction.
  • a large number of first shower nozzles and second shower nozzles are provided at predetermined intervals in the transport direction of the substrate to be processed and in the direction intersecting the transport direction.
  • the chemical solution is sprayed from a large number of first shower nozzles on the surface to be processed of the substrate, and the chemical solution processing is performed.
  • the chemical liquid can be sprayed from a large number of second shower nozzles on the ceiling of the chemical liquid treatment tank to promote the generation and dropping of the aggregated droplets.
  • Each of the second shower nozzles swings in the transport direction of the substrate to be processed when the chemical solution is sprayed.
  • each second shower nozzle is configured to spray a chemical on the ceiling of the chemical treatment tank while swinging in the direction of conveyance of the substrate to be processed.
  • the chemical spraying range by the individual second shower nozzles is wider in the transport direction of the substrate to be processed than in the case where the chemical spraying direction of the second shower nozzle is fixed.
  • the number of second shower nozzles can be reduced by extending the arrangement interval of the branch pipes connected to each other or by thinning the branch pipes. Thereby, the flow volume of the chemical
  • 8th invention is the chemical
  • Each of the first shower nozzles swings in the transport direction of the substrate to be processed when the chemical solution is sprayed.
  • each first shower nozzle sprays the chemical liquid onto the surface of the substrate to be processed while swinging in the direction of conveyance of the substrate to be processed.
  • the chemical spraying range by the individual first shower nozzles is wider in the transport direction of the substrate to be processed than in the case where the chemical spraying direction of the first shower nozzle is fixed.
  • the number of first shower nozzles can be reduced by increasing the arrangement interval of the branch pipes connected to each other or by thinning the branch pipes. Thereby, the flow volume of the chemical
  • the chemical liquid is also supplied to the ceiling of the chemical treatment tank so that the droplets of the chemical liquid adhering to the ceiling of the chemical treatment tank are not concentrated by evaporation of water, and the aggregated droplets are quickly generated and dropped.
  • FIG. 1 is a schematic view showing an etching processing apparatus according to the first embodiment.
  • FIG. 2 is a schematic diagram illustrating a configuration inside the etching treatment tank according to the first embodiment.
  • FIG. 3 is a schematic diagram showing the configuration of the upper etching shower according to the first embodiment from the lower side.
  • FIG. 4 is a schematic diagram illustrating the configuration of the ceiling shower according to the first embodiment from above.
  • FIG. 5 is a schematic diagram illustrating a state during the etching process in the etching apparatus according to the first embodiment.
  • FIG. 6 is a schematic diagram illustrating an internal configuration of the etching treatment tank according to the second embodiment.
  • FIG. 7 is a schematic diagram illustrating an internal configuration of an etching treatment tank according to the fourth embodiment.
  • FIG. 1 is a schematic view showing an etching processing apparatus according to the first embodiment.
  • FIG. 2 is a schematic diagram illustrating a configuration inside the etching treatment tank according to the first embodiment.
  • FIG. 3 is a schematic
  • FIG. 8 is a schematic diagram showing the configuration of the upper etching shower according to the fourth embodiment from the upper side.
  • FIG. 9 is a schematic diagram illustrating a configuration inside the etching treatment tank according to the third embodiment.
  • FIG. 10 is a schematic diagram showing a state during an etching process in the etching apparatus of the reference example.
  • Embodiment 1 of the Invention an etching processing apparatus S will be described as an example of a chemical processing apparatus according to the present invention.
  • the etching processing apparatus S of this embodiment forms patterns such as wirings, electrodes, and semiconductor layers on an insulating substrate that is a base substrate when an active matrix substrate constituting a display panel such as a liquid crystal display device is manufactured. It is used to do.
  • the substrate W to be processed by the etching apparatus S is, for example, a rectangular flat glass substrate having a side of about 1000 mm to 3200 mm.
  • the substrate to be processed W may be as large as one display panel, or may be as large as a mother substrate corresponding to several display panels.
  • FIG. 1 is a schematic diagram showing a schematic configuration of the etching processing apparatus S.
  • the etching processing apparatus S is an apparatus that performs wet etching processing on the surface of the substrate W to be processed by a double-sided shower method. As shown in FIG. 1, the etching processing apparatus S conveys an etching processing tank 10, a cleaning tank 30 and a drying tank 35, which are continuous chemical processing tanks, and a substrate W to be processed. 30 and 35 and a transfer line 40 as transfer means for moving between the tanks 10, 30 and 35.
  • the transport direction 100 of the target substrate W is simply referred to as a substrate transport direction 100.
  • the etching treatment tank 10 is configured to perform an etching process by supplying an etching solution L as a chemical solution to the surface of the substrate W to be processed carried into the bath.
  • the cleaning tank 30 is disposed adjacent to the downstream side of the etching processing tank 10 in the substrate transport direction 100 and is configured to expose the surface of the substrate to be processed W exposed to cleaning water such as pure water for cleaning.
  • the drying tank 35 is arranged adjacent to the downstream side of the cleaning tank 30 in the substrate transport direction 100 and is configured to dry moisture remaining on the surface of the substrate W to be cleaned at high speed with hot air or the like. ing.
  • the conveyance line 40 is configured by a plurality of conveyance rollers 42 (shown in FIG. 2 referred to later), which are elongated cylindrical rotators, arranged in parallel in the horizontal direction.
  • the plurality of transport rollers 42 are arranged in parallel with each other at equal intervals along the substrate transport direction 100 so that each axial direction is a direction orthogonal to the substrate transport direction 100.
  • the surface to be treated is horizontally conveyed with the posture facing the ceiling side of the etching treatment tank 10.
  • the transfer line 40 is installed so as to pass through the etching processing apparatus S through the inlet and outlet (not shown) formed in each of the tanks 10, 30, and 35, and etches the substrate W to be processed. After carrying in from the outside of the processing apparatus S and passing through the etching processing tank 10, the cleaning tank 30 and the drying tank 35 in order, the processing apparatus S is carried out to the outside of the processing apparatus S.
  • the present invention is characterized by the structure of the etching tank 10 among the etching tank 10, the cleaning tank 30 and the drying tank 35, FIG. 2 to FIG. This will be described in detail with reference.
  • FIG. 2 is a schematic diagram showing an internal configuration of the etching treatment tank 10.
  • the etching tank 10 is provided with a carry-in port 10 a at the upstream end in the substrate transport direction 100 and a carry-out port 10 b at the downstream end in the same direction 100. Between the carry-in entrance 10a and the carry-out exit 10b, a plurality of transport rollers 42 constituting the transport line 40 are arranged in parallel in the horizontal direction.
  • An upper etching shower 12 that sprays the etching solution L onto the upper surface, which is the surface to be processed, of the substrate W to be processed, which is horizontally transferred by the transfer roller 42, is installed above the transfer line 40 in the etching processing tank 10.
  • a lower etching shower 18 that blows the etching solution L against the lower surface of the substrate W to be horizontally transported is installed below the transport line 40 in the etching processing tank 10.
  • FIG. 3 is a schematic diagram showing the configuration of the upper etching shower 12 from the lower side.
  • the upper etching shower 12 has a first liquid supply pipe 14 that is a first liquid supply pipe for supplying an etchant and a first liquid spraying the etching liquid L that is supplied through the upper liquid supply pipe 14.
  • a large number of upper surface treatment shower nozzles 16 are provided as shower nozzles.
  • the upper liquid supply pipe 14 is connected to the main pipe 14a extending along the substrate transfer direction 100 to the side of the substrate transfer position corresponding position, and is connected to the main pipe 14a and intersects the substrate transfer direction 100 from the main pipe 14a (for example, And a plurality of branch pipes 14b projecting in a direction orthogonal to each other.
  • the main pipe 14 a is connected in communication with a chemical solution tank (not shown) in which the etching solution L is stored outside the etching processing tank 10.
  • the main pipe 14a includes an open / close valve (not shown) that opens and closes the flow path of the main pipe 14a, and the etchant L stored in the chemical tank when the open / close valve is in an open state.
  • a liquid feed pump (not shown) for feeding liquid to each upper surface processing shower nozzle 16 is interposed.
  • the branch pipes 14b are arranged at equal intervals in the substrate transport direction 100 at locations corresponding to the substrate transport positions so as to be positioned above the substrate W being transported, and have a comb-teeth shape with respect to the main tube 14a. . Each of these branch pipes 14b is fixed with respect to the main pipe 14a.
  • the upper surface processing shower nozzle 16 is provided so as to protrude downward in the lower portion of each branch pipe 14b, and the base of the pipe 14b is arranged along the protruding direction of the branch pipe 14b. A plurality are provided at equal intervals from the end to the tip. At the tip of each of the upper surface processing shower nozzles 16, there is provided a blower outlet 16 a for the etching solution L directed downward.
  • Each upper surface processing shower nozzle 16 is arranged with a half pitch shift in the arrangement direction with respect to the upper surface processing shower nozzle 16 provided in the adjacent branch pipe 14b, and constitutes a staggered arrangement as a whole. ing.
  • a full cone type shower nozzle having a circular spray pattern is preferably employed as the upper surface treatment shower nozzle 16.
  • the upper etching shower 12 having the above-described configuration feeds the etching liquid L from the liquid feeding tank to the upper surface processing shower nozzles 16 through the upper liquid feeding piping 14 by driving the liquid feeding pump, and the tips of the upper surface processing shower nozzles 16.
  • the etching liquid L is sprayed on the upper surface of the substrate W being transferred from the blower outlet 16a, and the upper surface of the substrate W is etched.
  • the lower etching shower 18 has the same configuration as that of the upper etching shower 12, although the installation position and the direction of the shower nozzle are different.
  • the lower etching shower 18 includes a lower liquid supply pipe 20 that is a first liquid supply pipe for supplying an etchant having a main pipe 20a and a plurality of branch pipes 20b fixedly connected to the main pipe 20a.
  • a number of lower surface treatment shower nozzles 22 are provided as first shower nozzles for spraying the etching liquid L supplied through the side liquid feeding pipe 20.
  • the main pipe 20a and the branch pipes 20b are respectively disposed at positions corresponding to the lower side of the main pipe 14a and the branch pipes 14b of the upper etching shower 12, for example.
  • the lower surface treatment shower nozzle 22 is provided so as to protrude upward in the upper portion of each branch pipe 20b, and from the proximal end of the pipe 20b so as to be arranged along the protruding direction of the branch pipe 20b.
  • a plurality are provided at equal intervals across the tip.
  • Each of these lower surface treatment shower nozzles 22 is provided so as to be alternately arranged with the upper surface treatment shower nozzles 16 along the projecting direction of the branch pipes 14b and 20b at positions corresponding to the vertical direction of the etching treatment tank 10. Configures a staggered arrangement.
  • a full cone type shower nozzle having a circular spray pattern is preferably used as the lower surface treatment shower nozzle 22.
  • the main pipe 20a of the lower etching shower 18 is also connected to a chemical tank via an open / close valve and a liquid feed pump outside the etching processing tank 10 in the same manner as the main pipe 14a of the upper etching shower 12.
  • the lower etching shower 18 having the above-described configuration supplies the etching liquid L from the chemical tank through the lower liquid supply pipe 14 to the lower surface treatment shower nozzles 22 by driving the liquid supply pump, and these lower surface treatment shower nozzles 22.
  • An etching solution is sprayed from the blowout port 22a at the tip to the lower surface of the substrate W to be processed.
  • the etching liquid L is sprayed from the shower nozzles 16 and 22 of the upper and lower etching showers 12 and 18 onto both surfaces of the substrate W to be processed. Even if the etching solution L supplied from the shower nozzle 16 to the upper surface of the substrate W to be produced generates a hardly soluble reaction product on the surface of the substrate W, the etching solution L containing the product is exposed to the lower surface ( Therefore, it is possible to perform a high-quality etching process in a short time.
  • the shower 24 for ceiling which sprays the etching liquid L on the ceiling surface 10c of the etching process tank 10 is installed above the upper side etching shower 12.
  • FIG. The ceiling surface 10c of the etching treatment tank 10 to which the etchant L is sprayed by the ceiling shower 24 is formed horizontally.
  • the upper etching shower 12, the lower etching shower 18, and the ceiling shower 24 constitute the chemical spraying means of the present invention.
  • FIG. 4 is a schematic diagram showing the configuration of the ceiling shower 24.
  • the ceiling shower 24 also has the same configuration as that of the upper etching shower 12, although the installation position and the direction of the shower nozzle are different.
  • the ceiling shower 24 supplies the ceiling liquid supply pipe 26 that is the second liquid supply pipe for supplying the etchant and the etching liquid L supplied through the ceiling liquid supply pipe 26.
  • a number of ceiling shower nozzles 28 serving as second shower nozzles that are sprayed toward the ceiling surface 10c of the etching tank 10 are provided.
  • the liquid supply pipe 26 for the ceiling includes a main pipe 26a extending along the substrate transfer direction to the side of the substrate transfer position corresponding portion, and a plurality of branch pipes each connected to the main pipe 26a and protruding to the side of the main pipe 26a. 26b.
  • the main pipe 26a of the ceiling shower 24 is also connected to a chemical tank through an open / close valve and a liquid feed pump outside the etching processing tank 10 in the same manner as the main pipe 14a of the upper etching shower 12.
  • the on-off valve and the liquid feed pump of the ceiling shower 24 are separate from the on-off valves and the liquid feed pumps of the above-described substrate processing etching showers (upper and lower etching showers) 12, 18.
  • the shower 24 and the etching showers 12 and 18 for processing the substrate are configured to be driven independently.
  • the branch pipe 26b is disposed at a position corresponding to the substrate transfer position at equal intervals in the substrate transfer direction 100, and has a comb shape with respect to the main pipe 26a. In the present embodiment, these branch pipes 26b are fixed with respect to the main pipe 26a.
  • the ceiling shower nozzle 28 is provided so as to protrude upward from the upper portion of each branch pipe 26b and from the base end of the pipe 26b so as to be arranged along the protruding direction of the branch pipe 26b. A plurality are arranged at predetermined intervals across the tip. At the tip of each of these shower nozzles 28 for ceiling, an outlet 28a for the etching solution L facing upward is provided.
  • the ceiling shower nozzles 28 are arranged with a half pitch shift with respect to the ceiling shower nozzles 28 provided in the adjacent branch pipes 26b, and constitute a zigzag array as a whole.
  • a full cone type shower nozzle having a circular spray pattern is preferably used as the ceiling shower nozzle 28.
  • the ceiling shower 24 sends the etchant L from the chemical tank to the ceiling shower nozzles 28 through the ceiling feed pipe 26 by driving the liquid feed pump during the etching process on the upper surface of the substrate W to be processed.
  • the etching solution L is applied to the ceiling surface 10c of the etching treatment tank 10 from the outlet 28a at the tip of each ceiling shower nozzle 28 over the corresponding portion of the range where the etching treatment is performed by spraying the etching solution L with the upper etching shower 12. It comes to spray.
  • the etching liquid L is sprayed onto the ceiling surface 10c of the etching tank 10 during the etching process, the etching process of the substrate W to be processed, for example, the scattering or mist of the etching liquid L generated by the spraying of the etching liquid L onto the substrate W is performed.
  • the splash X ′ is concentrated in the etching treatment tank 10 by the ceiling shower 24 before being concentrated by evaporation of moisture. It mixes with the etchant L sprayed on the ceiling surface 10c and quickly aggregates and falls due to its own weight.
  • agglomerated droplet X has the same concentration as when it is sprayed on the ceiling surface 10c of the etching processing tank 10, even if it falls on the surface of the substrate W to be processed, an abnormality in the etching rate does not occur.
  • a good etching process can be performed on the substrate W to be processed.
  • a substrate detection sensor (not shown) is provided inside the etching processing tank 10 as detection means capable of detecting the presence or absence of the substrate W to be processed.
  • This substrate detection sensor is connected to a control system (not shown) installed outside the etching processing tank 10.
  • the control system is also connected to the opening and closing valves of the upper etching shower 12, the lower etching shower 18, and the ceiling shower 24 and the liquid feed pump, and the substrate W to be processed has passed through the etching tank 10 by the substrate detection sensor. On the basis of this determination, the blowout of the etching solution L from each shower nozzle 16, 22, 28 is controlled.
  • FIG. 5 is a schematic diagram showing a state during the etching process in the etching processing apparatus S.
  • FIG. 10 is a schematic diagram showing a state during an etching process in the etching apparatus of the reference example.
  • FIG. 10 for convenience, portions corresponding to the respective components of the etching processing apparatus S of the present embodiment are given the same reference numerals.
  • the target substrate W to be processed in the etching processing apparatus S is transported on the transport line 40 and is transported into the etching processing tank 10 from the transport inlet 10a.
  • the target substrate W placed on the transport line 40 has already been subjected to substrate cleaning processing, photoresist coating processing, pre-baking processing, pattern exposure processing, development processing, and post-baking processing, and a thin film is formed on the upper surface thereof. It is formed.
  • the substrate detection sensor detects the presence of the substrate to be processed W, and the control system operates to operate the upper etching shower 12, the lower etching shower 18, and the ceiling. Scattering of the etchant L by the shower 24 is started. And while the to-be-processed substrate W is conveyed in the etching processing tank 10 from an upstream end to a downstream end, as shown in FIG. 5, it is processed from each shower nozzle 16 and 22 of the upper and lower etching showers 12 and 18. Etching solution L is sprayed on both surfaces of the substrate W to perform wet etching. In the meantime, the etchant L is also sprayed from the shower nozzles 28 of the ceiling shower 24 to the ceiling surface 10 c of the etching tank 10.
  • the same liquid L is scattered and mist 200 is generated by spraying the etching liquid L, so that the droplet X 'of the etching liquid L adheres to the ceiling surface 10c of the etching processing tank 10.
  • the droplet X 'of the etching liquid L adhering to the ceiling of the processing tank 10 is concentrated by evaporation of water and has a high concentration.
  • the agglomerated droplet X may fall on the upper surface of the substrate W being transported, and the etching rate may be abnormal at the location where the agglomerated droplet X falls on the substrate W to be processed, resulting in a defective etching process. Resulting in.
  • the splash X ′ adhering to the ceiling of the treatment tank 10 is generated in each ceiling shower nozzle 28. Since the droplet X quickly drops before being mixed with the etching solution L sprayed from the substrate and concentrated, there is no problem such as an abnormal etching rate even if it drops on the surface of the substrate W to be processed. A good etching process can be performed on the substrate W to be processed.
  • the substrate W to be processed is unloaded from the etching tank 10 through the carry-out port 10b, and then loaded into the adjacent cleaning tank 30.
  • the pure water shower nozzle provided in the cleaning tank 30 is activated to spray pure water onto the surface of the substrate W to be processed, and etching remaining on the surface of the substrate W Liquid L is washed.
  • the to-be-processed substrate W thus cleaned is carried out from the cleaning tank 30 and subsequently carried into the adjacent drying tank 35.
  • the oven provided in the drying tank 35 is operated to scan the surface of the substrate W to be processed with hot air, thereby drying the surface of the substrate W at high speed.
  • the to-be-processed substrate W thus dried is carried out of the drying tank 35 and the etching process is completed.
  • the etching liquid L is sprayed onto the ceiling surface 10c of the etching processing tank 10 by the ceiling shower 24, so that the processing tank 10 has a ceiling surface 10c. Since the droplets X ′ of the adhering etchant L are condensed and generated quickly before dropping, the etching process is poor due to the dropping of the aggregated droplets X from the ceiling surface 10c of the processing tank 10. Generation
  • production can be prevented and a favorable etching process can be performed to the to-be-processed substrate W upper surface.
  • the ceiling surface 10c of the etching treatment tank 10 is horizontal, the etching liquid L sprayed on the ceiling surface 10c aggregates and falls at a plurality of randomly dispersed locations, so the location where the aggregated droplet X falls It is possible to avoid the etching rate or the deterioration of the in-plane uniformity of the patterning shape, which is a concern when the is locally biased.
  • the blowing operation of the etching liquid L of these shower nozzles 16 and 28 is independently controlled. be able to.
  • the shower nozzles 16 and 28 simultaneously blow out the etching liquid L, which is difficult to control and is individually controlled. It is difficult to adjust the flow rate.
  • the blowing operation of the etching liquid L of the ceiling shower nozzle 28 is controlled separately from the blowing operation of the etching liquid L of the upper surface processing shower nozzle 16, and the ceiling shower nozzle 28 is controlled. Operation such as intermittent operation becomes possible.
  • FIG. 6 is a schematic diagram showing an internal configuration of the etching treatment tank 10 of the second embodiment.
  • the etching processing tank 10 is configured in the same manner as in the above-described first embodiment with respect to the etching processing apparatus S except that the configuration inside the etching processing tank 10 is different from that in the above-described first embodiment. Only the internal configuration will be described, and the same components will be left to the description of the first embodiment based on FIGS. 1 to 5, and the detailed description thereof will be omitted.
  • the configuration in which the ceiling shower 24 is provided separately from the upper etching shower 12 has been described.
  • the upper etching shower 12 also functions as the ceiling shower 24.
  • the etching liquid L is sprayed on the upper surface of the substrate W to be processed, which is horizontally transported by the transport rollers 42, above the transport line 40 in the etching processing tank 10 of the present embodiment, the top surface 10c of the etching processing tank 10 is sprayed. Also, an upper etching shower 50 for spraying the etching solution L is provided.
  • This upper etching shower 50 has a configuration similar to that of the upper etching shower 12 of the first embodiment, and in addition to this configuration, a plurality of ceiling shower nozzles are provided in the upper portion of each branch pipe 14b of the upper liquid feeding pipe 14.
  • the configuration is such that 28 is arranged at equal intervals from the proximal end to the distal end of the branch pipe 14b so as to be arranged along the protruding direction of the branch pipe 14b.
  • Each of the ceiling shower nozzles 28 is arranged so as to form a staggered arrangement as a whole as in the first embodiment.
  • the ceiling shower nozzle 28 is connected to the same liquid supply pipe 14 as the upper surface treatment shower nozzle 16 so that the upper etching shower can be obtained.
  • 50 also has a function of spraying the etching liquid L onto the ceiling surface 10c of the etching treatment tank 10, so that the piping system can be simplified as compared with the case where the ceiling shower 24 is provided separately from the upper etching shower 12. it can.
  • FIG. 7 is a schematic diagram showing an internal configuration of the etching tank 10 according to the third embodiment.
  • FIG. 8 is a schematic diagram showing the configuration of the upper etching shower 50 according to the third embodiment from the upper side.
  • the upper etching shower 50 also serves as the ceiling shower 24, and each branch pipe 14 b in the upper etching shower 50 is configured.
  • a plurality of upper surface treatment shower nozzles 16 are provided in the lower part, and a plurality of ceiling shower nozzles 28 are provided in the upper part of each branch pipe 14b.
  • the liquid supply pipe 14 of the upper etching shower 50 includes a rotation mechanism (not shown) for rotating each branch pipe 14b and a motor 29, and each branch pipe 14b rotates about its axial direction. It is configured as follows. Thereby, when the etching liquid L is sprayed, each upper surface processing shower nozzle 16 sprays etching on the upper surface of the substrate W to be processed while swinging in the substrate transport direction 100, and each ceiling shower nozzle 28 is in the substrate transport direction 100. Etching solution L is sprayed on the ceiling surface 10c of the etching treatment tank 10 while swinging.
  • the spraying range of the etching liquid L in each of the upper surface processing shower nozzle 16 and the ceiling shower nozzle 28 is fixed when the spraying direction of the etching liquid L of the shower nozzles 16 and 28 is fixed.
  • the number of the upper surface processing shower nozzles 16 and the ceiling shower nozzles 28 can be reduced by extending the arrangement interval of the branch pipes 14b or thinning the branch pipes 14b.
  • the flow volume of the etching liquid L sent out to the liquid feeding piping 14 with which these shower nozzles 16 and 28 were connected can be decreased, and the load concerning the liquid feeding pump used for sending out the etching liquid L can be suppressed. it can.
  • FIG. 9 is a schematic diagram showing an internal configuration of the etching treatment tank 10 according to the fourth embodiment.
  • the ceiling shower 24 sprays the etching liquid L onto the ceiling surface 10c of the etching bath 10 in the entire corresponding area where the etching liquid L is sprayed onto the upper surface of the substrate W to be processed by the upper etching shower 12.
  • the ceiling shower 24 has been described as being configured so that the droplets X ′ are likely to aggregate on the ceiling surface 10c of the etching tank 10 and the aggregated droplets X are likely to fall.
  • the etching solution L is locally sprayed on the part.
  • an existing structure 300 having a convex portion below the substrate detection sensor, the piping system, and the like is provided on the ceiling surface 10 c of the etching treatment tank 10.
  • the ceiling shower 24 of the present embodiment is provided in the liquid feeding pipe 26 (main pipe 26a and branch pipe 26b) extending to the lower position of such an existing structure 300, and the upper part of the liquid feeding pipe 26.
  • the ceiling shower nozzles 28 are provided, and the etching liquid L is sprayed from the ceiling shower nozzles 28 to the existing structure 300.
  • the droplet X ′ of the etchant L attached to the existing structure 300 that easily causes the aggregation droplet X to fall can be quickly dropped as the aggregation droplet X before being concentrated.
  • the liquid supply pipes 14 and 26 are configured to be able to rotate the branch pipes 14b and 26b around the axial direction thereof, and each upper surface treatment shower nozzle 16 and each ceiling shower nozzle. 28 may be configured to swing in the substrate transport direction 100 when the etching solution L is sprayed. Further, only one of the upper surface processing shower nozzle 16 and the ceiling shower nozzle 28 may be configured to swing in the substrate transport direction 100 when the etching solution L is sprayed.
  • the ceiling shower 24 has the same configuration as that of the upper etching shower 12.
  • the present invention is not limited to this, and the ceiling shower 24 is different from the upper etching shower 12 in the liquid supply piping. 26 and the configuration of the shower nozzle 28 for the ceiling may be different, as long as the etching liquid L can be sprayed onto the ceiling of the etching treatment tank 10.
  • the etching processing apparatus S is described as an example of the chemical processing apparatus of the present invention.
  • the present invention is not limited to this, and a resist layer used as a mask in a patterning process using photolithography is used.
  • Other chemical liquids such as a resist peeling apparatus that sprays a resist stripping solution as a chemical liquid on the surface to be processed of the substrate W to be processed, and a cleaning apparatus that sprays a cleaning liquid made of acidic liquid or alkaline liquid on the surface to be processed of the substrate to be processed
  • the present invention can also be applied to a processing apparatus, and can be widely applied to any apparatus that sprays a chemical on the surface of the substrate W to be processed and performs a predetermined process.
  • the present invention is useful for chemical processing apparatuses such as an etching processing apparatus, a resist stripping apparatus, and a cleaning apparatus, and in particular, the occurrence of defective chemical processing due to the fall of aggregated droplets from the ceiling of the processing tank. It is suitable for a chemical processing apparatus that is desired to prevent the above and to perform a good chemical processing on the substrate to be processed.
  • Etching solution (chemical solution) S Etching processing equipment (chemical processing equipment) W Substrate 10 Etching tank (chemical solution tank) 10c Ceiling surface of etching tank 12 Upper etching shower (chemical spraying means) 14 Upper liquid feeding pipe 14a Main pipe 14b Branch pipe 16 Top surface shower nozzle (first shower nozzle) 18 Lower etching shower (chemical spraying means) 20 Lower liquid feed pipe 20a Main pipe 20b Branch pipe 22 Lower surface shower nozzle (first shower nozzle) 24 Shower for ceiling (Mechanical spraying means) 26 Ceiling liquid supply pipe 26a Main pipe 26b Branch pipe 28 Ceiling shower nozzle (second shower nozzle) 40 Conveying line 42 Conveying roller 100 Conveying direction of substrate to be processed 300 Existing structure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
PCT/JP2013/003410 2012-06-06 2013-05-30 薬液処理装置 WO2013183260A1 (ja)

Priority Applications (2)

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CN201380019935.8A CN104246988B (zh) 2012-06-06 2013-05-30 药液处理装置
JP2014519825A JP5890018B2 (ja) 2012-06-06 2013-05-30 薬液処理装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282598A (zh) * 2014-09-23 2015-01-14 安徽省大富光电科技有限公司 蚀刻、显影、清洗以及褪膜设备、喷淋处理设备及方法
US20200106056A1 (en) * 2017-09-04 2020-04-02 Sharp Kabushiki Kaisha Etching device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110586552A (zh) * 2019-10-17 2019-12-20 攀钢集团矿业有限公司 一种往复式高梯度磁选机冲洗装置
JP2022138907A (ja) * 2021-03-11 2022-09-26 キオクシア株式会社 基板洗浄装置および基板洗浄方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH03284386A (ja) * 1990-03-30 1991-12-16 Shibaura Eng Works Co Ltd 洗浄用処理槽
JPH04196425A (ja) * 1990-11-28 1992-07-16 Sigma Merutetsuku Kk 薬液処理装置
JPH0737858A (ja) * 1993-07-19 1995-02-07 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03284386A (ja) * 1990-03-30 1991-12-16 Shibaura Eng Works Co Ltd 洗浄用処理槽
JPH04196425A (ja) * 1990-11-28 1992-07-16 Sigma Merutetsuku Kk 薬液処理装置
JPH0737858A (ja) * 1993-07-19 1995-02-07 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282598A (zh) * 2014-09-23 2015-01-14 安徽省大富光电科技有限公司 蚀刻、显影、清洗以及褪膜设备、喷淋处理设备及方法
US20200106056A1 (en) * 2017-09-04 2020-04-02 Sharp Kabushiki Kaisha Etching device

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CN104246988A (zh) 2014-12-24
JP5890018B2 (ja) 2016-03-22
CN104246988B (zh) 2016-09-14
JPWO2013183260A1 (ja) 2016-01-28

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