548697 五、 發明說明 ( 1 : ) [ 發 明 的技 術 領 域 ] 本 發 明 係 關 於 液 晶 顯 示裝 置 用玻璃 基 板 之 製造等 使 用 的 輸 送 式 基 板 處 理 裝 置 0 [ 習 知技 術 ] 液 晶 顯 示 裝 置 上 使用 之玻 璃 基板， 係在坯料之玻 璃 基 板 的 表 面 重 複 實 施 飩 刻 、剝 離 等化學 處 理 來 進行製 造 〇 該 處 理 裝 置 可 大 致 分 成 乾 式及 濕 式，濕 式 又 可分爲批 量 式及 多 室 式 〇 又 多 室 式 又 細分 成 旋轉式及 滾 筒 輸送等 之 輸 送 式 〇 這 基 板 處 理 裝 置 當 中， 輸 送式者 之 基 本 構成係 以 大 致 水平 方 向 輸 送 基 板並 對 該基 板 表面供 應 處 理 液，因 爲 具 有 較 局 效 率 而 白 以往即 被 使用 於 鈾刻處: 理及: 離處理上 〇 使用 於 蝕 刻 處 理 之 輸 送式 基 板處理 裝 置 中 ，係從 配 置 於 基 板 輸 送 線 上 方 之矩 陣 狀多 數 噴霧嘴 噴 出 鈾 刻液， 利 用 使 基 板 通 過 此 蝕 刻 液 中 之 方式 對 基板表 面 整 體 供應蝕 刻 液 〇 此 簇 射 處 理 可 對 塗 敷 遮罩 材料部份 以 外 之 基板表 面 進 行 巳 擇 式 蝕 刻 〇 鈾 刻 結 束 後， 再 利用簇 射 進 行洗淨處 理 〇 基 本 上 剝 離 處 理 用 者 亦 具有 同 樣構成 0 [ 發 明 所 欲 解 決 之 問 題 ] 然 而 > 液 晶 顯 示 裝 置 用玻 璃 基板則 不 斷 推 動基板之大 型 化及 電 路 之 高 m 細 化 尤其 ， 隨著其 局 精 細 化，開 始使用 低 溫 聚 矽 〇 此外 絕 緣 膜 Si〇2 膜上之 接 A»nm 觸 窗 (contact : hole) 的 形成 操 作 亦 隨 著 基 板爲 主 3 之大型 化 ， 而 從乾蝕 刻 改 換 548697 五、發明說明（2) 成使用緩衝氟酸（BHF)之濕蝕刻。 然而，在低溫聚矽構成之玻璃基板上利用氟酸系藥液進 行鈾刻，氟酸會和聚矽反應，而出現在玻璃基板背面上會 因爲玻璃腐蝕而產生污垢之問題。 亦即，對基板表面簇射鈾刻液時，部份蝕刻液會到達背 面側。此外，背面之橫向的複數部位會和輸送滾筒接觸， 亦有因爲此接觸而產生附著蝕刻液之現象。基板之乾燥背 面若局部附著蝕刻液，則該部份會被腐蝕而產生污垢。此 污垢在液晶製品以背光從後面照明時，就會出現痕跡。因 此，必須極力避免因表面蝕刻處理導致之背面局部腐鈾的 污垢，因此，在背面亦實施蝕刻液之簇射。 然而，實施此種簇射，背面之局部腐蝕所造成的污垢亦 無法完全避免。因爲背面簇射時，因受到輸送滾筒等之阻 礙，而無法使蝕刻液均一附著。此外，開始簇射處理時， 蝕刻液之細液滴衝撞部位亦會產生處理痕跡，其後，即使 實施簇射處理亦無法消除，而在蝕刻後留下細污垢。 本發明之目的，係針對使用受到處理液腐鈾之基板時， 而提供可防止該基板背面因局部腐蝕而產生污垢之基板處 理裝置。 【解決問題之手段】 爲了達成前述目的，本發明之基板處理裝置，係在大致 水平方向使基板通過複數處理部且在各處理部對基板表面 供應處理液之輸送式基板處理裝置上，在複數處理部之至 548697 五、發明說明（3) 少其一處理部之入口部份，在其基板輸送線之下方，設置 使處理液溢流並接觸整個基板背面的深槽。 本發明之基板處理裝置中，利用使進入處理部之基板通 過深槽上，可以使該基板之背面依序從前端部至後端部的 整個橫向都獲得均一處理液之潮濕度。背面一旦獲得均一 潮濕度後，只要該背面未乾燥，則即使因處理液到達背面 或因和輸送滾筒之接觸，而使處理液附著於局部背面時， 亦不會產生污垢。 深槽之出口側，若設有以配列於基板行進方向、及和其 行進方向相垂直之方向上之多數個噴霧嘴對基板背面整體 供應處理液的簇射單元，利用通過深槽上方，可有效防止 潮濕之背面出現乾燥的情形。 本發明之基板處理裝置可適用於蝕刻裝置，亦可適用於 剝離裝置。蝕刻裝置時，前述深槽對鈾刻部及水洗部有效 。剝離裝置之構成上，則是對基板表面供應剝離液後，對 其表面進行水洗，供應剝離液之剝離部及水洗部之間，可 以夾著置換部或不夾著置換部。置換部係剝離液和水相混 時可能產生問題而將基板表面上之剝離液暫時置換成不會 產生問題之藥液的部份。剝離裝置之深槽對剝離部及水洗 部有效，其間夾著置換部時，對該置換部亦有效。 和水混合而會發生問題之剝離液爲，例如，MEA(乙醇 胺）、或MEA及MDSO(二甲亞碾）之混合液等。mea和水 混合會變成強破，會損壞設備等。相對於此，水系剝離液 548697 五、發明說明（4) 就不會發生問題，而無需置換。針對前述2種剝離液，通 常會採用DMSO當做置換液。其他剝離液則會採用IPA( 異戊二烯乙醇）等。 在剝離裝置之剝離部及置換部的入口部份設置深槽，和 在蝕刻部之入口部份設置深槽時相同，可以防止背面產生 污垢。剝離處理時，剝離液或置換液之藥液溫度爲80〜 9 0°C，溫度較蝕刻液高，故從基板背面容易乾燥之觀點而 言，背面會有容易產生污垢之傾向。從此觀點來看，深槽 對剝離裝置亦應有效。同時，蝕刻液之溫度爲4(TC左右。 另一方面，在蝕刻處理、剝離處理、及置換處理後之水 洗處理中，可以利用設置深槽來迅速實施背面之藥液置換 〇 此外，深槽上之通過·藥液接觸之藥液供應，並不會造 成處理藥液飛濺。因此，蝕刻液、剝離液、及置換液等處 理液（藥液）不會侵入上游側之處理部。這些藥液若侵入上 游側之處理部，則不但會發生腐鈾等問題，同時也會增加 藥液損失而擴大藥液成本。又，因洗淨水不會侵入上游側 之藥液處理部，亦即不會侵入蝕刻部、剝離部、及置換部 等，可節約藥液處理部之藥液成本。洗淨水若侵入前述藥 液處理部，則會稀釋藥液而無法循環使用，此時，亦會增 加藥液成本。 【發明之實施形態】 以下係參照圖面說明本發明實施形態。第1圖係本發明 548697 五、發明說明（5) 之1實施形態的基板處理裝置之平面圖，第2圖係該基板 處理裝置之主要部位的側面圖，第3圖則係配置於該主要 部位之深槽及其附近的縱側面圖，第4圖則爲圖3之A-A 線箭頭方向圖。 本實施形態之基板處理裝置，係使用於在低溫聚矽構成 之液晶顯示裝置用玻璃基板1〇〇(以下簡稱爲基板100)上形 成接觸窗之濕處理。如第1圖所示，此基板處理裝置之配 置上，採用由直線狀之第1線A、和第1線A成垂直連接 之第2線B、及和第2線B垂直連接並和第1線平行之第 3線C組合而成之U形。 第1線A係由受取部10、排液部20、及蝕刻部30以直 線連結方式構成。第2線B則爲水洗部40。第3線C係 由移載裝置50、自旋乾燥機60、移載裝置70、及取出部 80以直線連結方式構成。 第1線A及第2線B爲了在線縱向輸送基板100，故在 輸送方向上隔著一定間隔並列著多數輸送滾筒。各輸送滾 筒皆爲和輸送方向成垂直之水平滾筒。第2線B，亦即水 洗部40之入口部上，設有將基板100之行進方向改變90 度之轉向機構41。 接受A1蝕刻處理之基板100，以輸送裝置90送入受取 部1 0。該基板1 〇〇從排液部20以滾筒輸送至飩刻部30， 通過時實施蝕刻處理。通過蝕刻部3 0之基板1 00接著被 以滾筒輸送至水洗部40,改變90度之行進方向並移動水 548697 五、發明說明（6) 洗部40，移動期間實施水洗處理。 被移動至水洗部40之出口部的基板1 〇〇，會利用移載裝 置5 0將其從水洗部40輸送至自旋乾燥機60。在自旋乾燥 機6 0完成乾燥之基板1 0 0，會利用移載裝置7 0將其從自 旋乾燥機60取出並輸送至取出部80，然後，再由輸送裝 置90輸送至裝置外。 本實施形態之水平輸送式基板處理裝置之最大特徵，就 是蝕刻部30及水洗部40。 蝕刻部30如第2圖所示，具有在水平方向輸送基板ι〇〇 之多數輸送滾筒3 1，基板1 00之輸送線上方，爲了對基板 1 〇 0表面提供蝕刻液，在入口部設置楔形噴嘴3 3，而在其 下游側則設有簇射單元34。又，爲了從基板1〇〇表面除去 蝕刻液，將楔形之氣嘴36配置於簇射單元34之後方。 另一方面，基板1 〇〇之輸送線下方，使蝕刻液接觸基板 100背面之深槽37，係設於蝕刻部30之入口部份，在其 下游側則設有簇射單元3 8。 輸送滾筒31如第3圖及第4圖所示，具有水平驅動軸 3 1 a、及配置於驅動軸3 1 a之軸方向上數部位的大口徑支 承滾筒3 1 b。此處，支承滾筒3 1 b配置於基板1 〇 〇之兩側 邊緣部及中央部之3個部位，以此3部位使基板保持水平 並朝縱向移動。 楔形噴嘴33係和基板100之行進方向成垂直之橫向水 平噴嘴，配置於飩刻部30入口部份之簇射單元34的前側 548697 五、發明說明（7) 。噴嘴本體3 3 a會以直線狀，對基板1 00表面之行進方向 的部份全面以楔形部33d提供由供應管33c供應之飩刻液 〇 上側之簇射單元34具有，在基板100上和基板100行 進方向相平行之水平方向、以及和行進方向相垂直之水平 方向上，以特定間隔之矩陣狀（含交錯狀）配置之多數噴霧 嘴3 4a，對此基板1 0表面更廣泛之範圍實施氟酸系蝕刻液 之噴霧。 多數噴霧嘴34a並列於和基板100之行進方向相垂直的 方向，且分別沿著基板1 00之行進方向以向下方式裝配置 於複數之集管34b上。各噴霧嘴34a會使A1用蝕刻液成 細液滴狀，並以圓錐狀噴射，相鄰之噴嘴間，各噴嘴之噴 射範圍互相重疊。此處之蝕刻液供應量，則設定爲可以在 基板100表面上可充份進行藥液置換。 深槽37係寬度比基板100之寬度更大的液槽，設置於 比楔形噴嘴33更內側、且在基板100之輸送線下方。此 深槽37係從上面開口部使供應管37a供應之氟酸系蝕刻 液溢流之溢流槽，其上面開口部就位於稍低於基板100之 輸送線的下方，其構成上，係可使溢流之蝕刻液接觸基板 100背面之行進方向部份的整個橫向。 深槽37之內部，配置著蝕刻部30之第1段輸送滾筒31 。因此，蝕刻部30中，深槽37之內側並沒有輸送滾筒3 1 。未將深槽37配置於第1段輸送滾筒3 1之外側而將其配 548697 五、發明說明（8) 置於第1段輸送滾筒3 1之內側或同一部位，係防止簇射 單元34之噴出所產生的霧氣附著於第1段輸送滾筒31， 因而使其先接觸基板1 〇〇而形成蝕刻痕跡及污垢。 下側之簇射單元38亦和上側之簇射單元34相同，係由 矩陣狀配列之多數噴霧嘴3 8 a對上方噴出氟酸系蝕刻液， 使触刻液散布於通過上方之基板1 0 0的背面。多數之噴霧 嘴3 8a並列於基板1 00之行進方向的垂直方向，且沿著基 板100之行進方向向上配置著複數集管38b，氟酸系之蝕 刻液會形成細液滴並以圓錐狀噴出。此時之蝕刻液供應量 ，設定爲可以防止基板1 〇〇背面乾燥之程度。 水洗部40具有將基板100之行進方向改變90度之轉向 機構41、及配置於其後方之多數輸送滾筒，而其上方，爲 了將洗淨水噴附於基板100表面，而設有楔形噴嘴42及 簇射單元43。又，其下方設有深槽44及簇射單元。 楔形噴嘴42係配置於水洗部40之入口部位，尤其是和 蝕刻部30連接之連接部附近。此楔形噴嘴42和配置於鈾 刻部30之入口部位的楔形噴嘴33具有相同之構成，在以 膜狀噴出洗淨水之噴嘴本體上裝設藥液導引板。 上側之簇射單元43係沿著基板100之行進方向採複數 配置。各簇射單元43和設置於蝕刻部30之簇射單元34 相同，係在基板1 00行進方向平行之水平方向、及和該行 進方向垂直之水平方向以一定間隔之矩陣狀（含交錯狀）配 置著多數噴霧嘴，並從上方向通過下方之基板100表面散 -10- 548697 五、發明說明（9) 布洗淨水。 下側之簇射單元亦和上側之簇射單元34相同，係以矩 陣狀配置著多數噴霧嘴，並從下方向通過上方之基板1〇〇 背面散布洗淨水。 深槽44配置於比楔形噴嘴42更內側之第1段輸送滾筒 處，和設於蝕刻部30之深槽37相同，使洗淨水溢流並接 觸基板1〇〇背面之行進方向部份的整個橫向。 具有此構成之本實施形態的基板處理裝置中，從排液部 20進入蝕刻部30之基板100，首先會通過深槽37之上方 ，且使其背面整個橫向都和氟酸系蝕刻液接觸。然後，會 通過由楔形噴嘴33之噴嘴本體33a噴出之氟酸系蝕刻液 之液膜中，並從前端部對其表面上依序供應蝕刻液。其次 ，從簇射單元34噴出之氟酸蝕刻液中通過，對基板100 之表面整體供應鈾刻液，實施一定之蝕刻。 若直接對基板1 〇〇之乾燥表面簇射氟酸系蝕刻液，則最 先承受到液滴之部份會出現處理痕跡，但若事前通過触刻 液之膜中，則可以在表面不會留下任何痕跡之情形下提供 蝕刻液，可防止鈾刻液之簇射處理所造成的處理痕跡。 又，氟酸系蝕刻液亦會到達基板1 〇〇之背面，且和輸送 滾筒31接觸亦有部份會附著蝕刻液，而在乾燥背面發生 此部份附著時，該附著部份會形成污垢而殘留下來，然而 ，基板100進入蝕刻部30後，立即通過深槽73之上方， 並使背面整個橫向和蝕刻液接觸而變得潮濕，接著，利用 -11- 548697 五、發明說明（1〇) 簇射單元3 8散布蝕刻液，則可防止背面出現乾燥的情形 。因此，通過蝕刻部3 0時隨著蝕刻液之吹附而到達背面 ，或是因和輸送滾筒31接觸而出現有部份會附著蝕刻液 的情形時，亦不會形成污垢。 通過簇射單元34之下方的基板1〇〇，會通過氣嘴36之 下方，去除表面上之鈾刻液後，進入水洗部40。進入水洗 部40時，基板100會通過深槽44之上方，接著，通過楔 形噴嘴42之下方。因爲通過深槽44之上方，會在瞬間將 背面之藥液置換成洗淨水，而停止蝕刻。而通過楔形噴嘴 42之下方，會在瞬間將表面之藥液置換成洗淨水，而停止 蝕刻。 通過深槽44之上方及楔形噴嘴42之下方並進入水洗部 40之基板100，在改變方向後，通過上測簇射單元43及 下側簇射單元噴出之洗淨水中，接受特定之洗淨處理。 前述實施形態之基板處理裝置係使用氟酸系蝕刻液形成 接觸窗用之蝕刻裝置，但亦可適用於其他蝕刻裝置，而且 ，不限於飩刻裝置，亦可使用於剝離裝置等。使用於剝離 裝置時，若能在剝離部及水洗部裝設深槽則更有效果，雨 者間若有置換部時，在此置換部設置深槽亦有良好效果。 剝離裝置亦會產生背面污垢。剝離裝置之藥液溫度會高於 蝕刻處理之藥液溫度，基板背面容易乾燥而形成污垢。 在剝離部之入口部份設置深槽，不但可以防止背面污垢 ，亦可防止剝離液飛濺至上游側，而防止上游側設備因剝 -12- 548697 五、發明說明（11) 離液而腐蝕，同時，亦可避免剝離液之損失。在置換部之 入口部份設置深槽，不但可以防止背面污垢，亦可以防止 置換液飛濺至上游側之剝離部，在剝離部則可防止置換水 混入剝離液內，置換部亦可避免置換液之無謂消耗。若能 在水洗部之入口部份設置深槽，不但可迅速實施基板背面 之藥液置換，同時，可以防止洗淨水混入剝離部或置換部 內，可避免剝離液或置換液之稀釋損失。 【發明之功效】 如上面所述，本發明之基板處理裝置，利用在處理部之 入口部份的基板輸送線下方設置使處理液溢流並接觸基板 背面整體之深槽，即使使用會受到藥液腐蝕之基板時，可 以防止藥液到達背面或輸送滾筒之接觸而產生部份附著並 形成背面污垢。在藥液處理部之後的水洗部，亦可迅速實 施藥液置換。又，不論是藥液處理或水洗處理，因處理液 不會飛濺，故可防止藥液飛濺至上游側，而解決藥液之設 備腐蝕問題、及洗淨水混入藥液而增加藥液成本之問題等 〇 【圖式之簡單說明】 第1圖係本發明一實施形態輸送式基板處理裝置之平面 圖。 第2圖係該基板處理裝置之主要部位的側面圖。 第3圖係設於該主要部位之深槽及其附近的縱剖面圖。 第4圖係第3圖之A-A線箭頭方向圖。 -13- 548697 五、發明說明（12) 【元件符號之說明】 10 受取部 20 排液部 30 蝕刻部 3 1 輸送滾筒 33 楔形噴嘴 34、38 簇射單元 36 氣嘴 37 深槽 40 水洗部 41 轉向機構 42 楔形噴嘴 43 簇射單元 44 深槽 50 > 70 移載裝置 60 自旋乾燥機 80 取出部 90 輸送裝置 100 基板 -14-548697 V. Description of the invention (1 :) [Technical Field of the Invention] The present invention relates to a conveyance type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device, etc. [Known Technology] A glass substrate used in a liquid crystal display device, The surface of the glass substrate of the blank is repeatedly subjected to chemical processing such as engraving and peeling to manufacture. The processing device can be roughly divided into dry and wet types, and wet types can be divided into batch and multi-chamber types. Among the substrate processing devices, which are subdivided into rotary and roller conveyors, the basic structure of the conveyor type is to transport the substrate in a substantially horizontal direction and supply the substrate with a processing liquid. Used for uranium engraving: processing and: separation processing The uranium etching solution is sprayed from a plurality of spray nozzles arranged in a matrix above the substrate conveying line, and the etching solution is supplied to the entire surface of the substrate by passing the substrate through the etching solution. This shower treatment can be applied to the coating material portion. Selective etching of the surface of substrates other than 0% is performed. After the uranium etching is completed, the shower treatment is performed by showering. Basically, the peeling treatment user also has the same structure. 0 [Problems to be solved by the invention] However, > Liquid crystal display device The use of glass substrates has continued to promote the size of the substrates and the refinement of the circuit's high m. In particular, with its localization, low-temperature polysilicon has begun to be used. In addition, the insulating film Si〇2 is connected to the A »nm contact window (contact: The formation operation of hole) has also changed from dry etching to 548697 as the substrate has become larger. V. Description of the invention (2) The wet etching using buffered fluoric acid (BHF). However, when uranium etching is performed on a glass substrate made of low-temperature polysilicon using a fluoric acid-based chemical solution, fluoric acid reacts with polysilicon, and the problem of dirt on the back of the glass substrate due to glass corrosion occurs. That is, when uranium etching liquid is sprayed on the substrate surface, part of the etching liquid reaches the back surface side. In addition, a plurality of lateral portions on the back surface may come into contact with the conveying roller, and there may be a phenomenon that an etching solution adheres due to the contact. If an etching solution is locally attached to the dry back surface of the substrate, the part will be corroded and dirt will be generated. This dirt appears when the liquid crystal product is illuminated from behind with a backlight. Therefore, it is necessary to try to avoid the local uranium decay on the back surface caused by the surface etching treatment. Therefore, showering of the etching solution is also performed on the back surface. However, with such a shower, the dirt caused by local corrosion on the back surface cannot be completely avoided. This is because when the back surface showers, it is blocked by the conveying roller or the like, so that the etchant cannot be uniformly adhered. In addition, when the showering process is started, the fine liquid droplets of the etching solution collide with the processing marks, and after that, even if the showering process is performed, it cannot be eliminated, and fine dirt remains after the etching. The object of the present invention is to provide a substrate processing device capable of preventing the back surface of the substrate from being locally stained due to local corrosion when using a substrate subjected to the treatment liquid rotten uranium. [Means for Solving the Problem] In order to achieve the foregoing object, the substrate processing apparatus of the present invention is a conveyance type substrate processing apparatus that passes a substrate through a plurality of processing units in a substantially horizontal direction and supplies processing liquid to a substrate surface at each processing unit. Processing section to 548697 V. Description of the invention (3) One of the processing sections is provided with a deep groove below the substrate conveying line to allow the processing liquid to overflow and contact the entire substrate back surface. In the substrate processing apparatus of the present invention, by passing the substrate entering the processing section through a deep groove, the back surface of the substrate can be sequentially obtained from the front end portion to the rear end portion in the entire lateral direction in a uniform wetness of the processing liquid. Once the back surface has obtained a uniform humidity, as long as the back surface is not dry, no dirt will be generated even when the treatment liquid adheres to the partial back surface due to the treatment liquid reaching the back surface or contact with the transport roller. If the exit side of the deep tank is provided with a shower unit that supplies a plurality of processing liquids to the entire back of the substrate with a plurality of spray nozzles arranged in the substrate traveling direction and a direction perpendicular to the traveling direction of the substrate, the shower unit can be used to pass above the deep tank. Effectively prevents the wet back from drying out. The substrate processing apparatus of the present invention can be applied to an etching apparatus and a peeling apparatus. When etching the device, the aforementioned deep groove is effective for the uranium engraved part and the washed part. In the structure of the peeling device, after the substrate is supplied with a peeling liquid, the surface is washed with water. The peeling portion and the water-washing portion that supply the peeling liquid may be sandwiched between the replacement portion or not. The replacement part may cause a problem when the peeling liquid is mixed with water, and temporarily replace the peeling liquid on the surface of the substrate with a chemical liquid that does not cause a problem. The deep groove of the peeling device is effective for the peeling part and the water washing part, and it is also effective for the replacing part when the replacing part is sandwiched therebetween. The peeling liquid which is mixed with water to cause problems is, for example, MEA (ethanolamine), or a mixed liquid of MEA and MDSO (dimethylformaldehyde). Mixing mea with water can cause rupture and damage equipment. In contrast, water-based stripping solution 548697 V. Description of the Invention (4) There will be no problem without replacement. For the two aforementioned stripping solutions, DMSO is usually used as the replacement solution. For other stripping solutions, IPA (isoprene ethanol) is used. Deep grooves are provided at the entrance of the peeling part and the replacement part of the peeling device, as in the case where deep grooves are provided at the entrance part of the etching part, which can prevent dirt from being generated on the back surface. In the peeling process, the temperature of the chemical solution of the peeling liquid or the replacement liquid is 80 to 90 ° C, which is higher than that of the etching liquid. Therefore, from the viewpoint of the substrate being easily dried on the back surface, the back surface tends to be easily stained. From this point of view, deep grooves should also be effective for peeling devices. At the same time, the temperature of the etching solution is about 4 ° C. On the other hand, in the etching process, the peeling process, and the water washing process after the replacement process, a deep groove can be used to quickly perform chemical liquid replacement on the back surface. In addition, the deep groove The supply of the chemical liquid through the contact with the chemical liquid does not cause the processing chemical liquid to splash. Therefore, the processing liquid (chemical liquid) such as the etching liquid, the peeling liquid, and the replacement liquid does not enter the processing section on the upstream side. These drugs If the liquid enters the processing section on the upstream side, not only problems such as uranium decay, but also the loss of the chemical solution will increase the cost of the chemical solution. Also, because the washing water will not enter the processing section on the upstream side, that is, It will not invade the etching part, peeling part, replacement part, etc., which can save the chemical solution cost of the chemical solution processing section. If the washing water invades the chemical solution processing section, the chemical solution will be diluted and cannot be recycled. At this time, also The cost of medicinal solution will increase. [Embodiments of the invention] The following describes the embodiments of the present invention with reference to the drawings. The first diagram is 548697 of the present invention V. The plane of the substrate processing apparatus according to the first embodiment of the invention (5) FIG. 2 is a side view of the main part of the substrate processing apparatus, FIG. 3 is a longitudinal side view of a deep groove arranged in the main part and its vicinity, and FIG. 4 is a direction diagram of the arrow AA of FIG. 3 The substrate processing apparatus of this embodiment is a wet process for forming a contact window on a glass substrate 100 (hereinafter referred to simply as the substrate 100) for a liquid crystal display device composed of low-temperature polysilicon. As shown in FIG. In the arrangement of the substrate processing apparatus, a linear second line A, a second line B perpendicularly connected to the first line A, and a third line C vertically connected to the second line B and parallel to the first line are used. The combined U-shape. The first line A is composed of the receiving part 10, the liquid discharge part 20, and the etching part 30 in a linear connection. The second line B is the washing part 40. The third line C is transferred The device 50, the spin dryer 60, the transfer device 70, and the take-out section 80 are connected in a straight line. The first line A and the second line B are arranged in parallel in the conveyance direction with a certain interval in the conveyance direction. A large number of conveying rollers. Each conveying roller is a horizontal roller perpendicular to the conveying direction. The second B, that is, the entrance portion of the washing unit 40 is provided with a steering mechanism 41 that changes the traveling direction of the substrate 100 by 90 degrees. The substrate 100 that has undergone the A1 etching treatment is conveyed into the receiving portion 10 by the conveying device 90. The substrate 1 〇〇The roller is transported from the draining section 20 to the engraving section 30, and the etching process is performed at the time of passing. The substrate 100 that has passed through the etching section 30 is then transported to the water washing section 40 by the roller, changing the direction of 90 degrees and moving the water. 548697 V. Description of the invention (6) The washing section 40 is subjected to a water washing process during the movement. The substrate 100 moved to the exit section of the washing section 40 will be transferred from the washing section 40 to the spin by the transfer device 50. Dryer 60. The substrate 100, which has been dried in the spin dryer 60, will be removed from the spin dryer 60 by the transfer device 70 and transferred to the removal portion 80, and then transferred by the transfer device 90. Outside the device. The biggest feature of the horizontal transfer type substrate processing apparatus of this embodiment is the etching section 30 and the water washing section 40. As shown in FIG. 2, the etching section 30 has a plurality of conveying rollers 31 for conveying the substrates in the horizontal direction, and above the conveying line for the substrates 100. In order to provide an etching solution to the surface of the substrates 100, a wedge is provided at the entrance. The nozzle 33 is provided with a shower unit 34 on its downstream side. In order to remove the etching solution from the surface of the substrate 100, a wedge-shaped gas nozzle 36 is disposed behind the shower unit 34. On the other hand, under the transport line of the substrate 1000, the etching solution is brought into contact with the deep groove 37 on the back surface of the substrate 100, which is provided at the entrance portion of the etching portion 30, and a shower unit 38 is provided on the downstream side thereof. As shown in Figs. 3 and 4, the conveyance roller 31 has a horizontal drive shaft 3 1 a and a large-diameter support roller 3 1 b arranged at several positions in the axial direction of the drive shaft 3 1 a. Here, the support rollers 3 1 b are arranged at three positions on both the edge portion and the center portion of the substrate 100, and the substrate is held horizontally and moved in the longitudinal direction by the three portions. The wedge-shaped nozzle 33 is a horizontal horizontal nozzle that is perpendicular to the traveling direction of the substrate 100, and is disposed on the front side of the shower unit 34 at the entrance portion of the engraving portion 30. 548697 5. Description of the invention (7). The nozzle body 3 3 a provides a wedge-shaped portion 33 d to the portion of the surface of the substrate 100 in the direction of travel in a straight line, and provides the etching liquid supplied by the supply pipe 33 c. The shower unit 34 on the upper side is provided on the substrate 100 and The majority of the spray nozzles 3 4a arranged in a matrix (including staggered pattern) at a specific interval in the horizontal direction parallel to the traveling direction of the substrate 100 and the horizontal direction perpendicular to the traveling direction of the substrate 100 have a wider range of the surface of the substrate 10 Spraying of a hydrofluoric acid-based etching solution is performed. Most of the spray nozzles 34a are arranged in a direction perpendicular to the traveling direction of the substrate 100, and are arranged on the plurality of headers 34b in a downward direction along the traveling direction of the substrate 100, respectively. Each of the spray nozzles 34a causes the droplets of the etching solution A1 to form a fine droplet, and sprays them in a conical shape. The spraying ranges of the respective nozzles overlap each other between adjacent nozzles. Here, the supply amount of the etching liquid is set so that the liquid chemical can be sufficiently replaced on the surface of the substrate 100. The deep groove 37 is a liquid groove having a larger width than the width of the substrate 100, and is disposed more inward than the wedge-shaped nozzle 33 and below the transport line of the substrate 100. This deep groove 37 is an overflow groove that overflows the fluoric acid-based etching solution supplied from the supply pipe 37a from the upper opening. The upper opening is located just below the conveying line of the substrate 100. The overflowing etching solution is caused to contact the entire lateral direction of the traveling direction portion of the back surface of the substrate 100. Inside the deep groove 37, the first-stage conveyance roller 31 of the etching section 30 is arranged. Therefore, in the etching portion 30, the transport roller 3 1 is not provided inside the deep groove 37. The deep groove 37 is not arranged on the outside of the first-stage conveying roller 31 and is equipped with 548697. V. Description of the invention (8) The inside of the first-stage conveying roller 3 1 or the same part is to prevent the shower unit 34. The mist generated by the ejection adheres to the first-stage conveying roller 31, so that it first contacts the substrate 1000 to form an etching mark and dirt. The shower unit 38 on the lower side is also the same as the shower unit 34 on the upper side, and a plurality of spray nozzles 3 8 a arranged in a matrix form spray a fluoric acid-based etching solution on the upper side, so that the etching liquid is dispersed on the substrate 10 passing through the upper side. 0 on the back. Most of the spray nozzles 3 8a are juxtaposed in the vertical direction of the substrate 100, and a plurality of headers 38b are arranged upward along the substrate 100. The hydrofluoric acid-based etching solution forms fine droplets and is ejected in a cone shape. . The supply amount of the etching solution at this time is set to such an extent that the back surface of the substrate 100 can be prevented from drying. The water washing section 40 includes a steering mechanism 41 that changes the direction of travel of the substrate 100 by 90 degrees, and a plurality of conveying rollers arranged behind it. Above it, wedge-shaped nozzles 42 are provided for spraying washing water on the surface of the substrate 100. And shower unit 43. Further, a deep groove 44 and a shower unit are provided below. The wedge-shaped nozzle 42 is arranged at the entrance of the water washing section 40, particularly near the connection section connected to the etching section 30. This wedge-shaped nozzle 42 has the same structure as the wedge-shaped nozzle 33 arranged at the entrance of the uranium engraved portion 30, and a chemical liquid guide plate is provided on the nozzle body which sprays the washing water in a film shape. The upper shower units 43 are plurally arranged along the traveling direction of the substrate 100. Each shower unit 43 is the same as the shower unit 34 provided in the etching portion 30, and is in a matrix shape (including staggered) in a horizontal direction parallel to the substrate 100 traveling direction and a horizontal direction perpendicular to the traveling direction. Most spray nozzles are arranged and spread from the top to the bottom of the substrate 100 -10- 548697 V. Description of the invention (9) Washing water. The shower unit on the lower side is also the same as the shower unit 34 on the upper side. A plurality of spray nozzles are arranged in a matrix, and the washing water is spread through the upper side of the substrate 100 from the lower direction. The deep groove 44 is disposed at the first-stage conveying roller, which is more inward than the wedge-shaped nozzle 42. The deep groove 44 is the same as the deep groove 37 provided in the etching portion 30, so that the washing water overflows and contacts the portion in the direction of travel of the back surface of the substrate 100 The entire landscape. In the substrate processing apparatus of this embodiment having such a structure, the substrate 100 that enters the etching section 30 from the liquid discharge section 20 first passes above the deep groove 37, and the entire back surface thereof is in contact with the fluoric acid-based etching solution. Then, it passes through the liquid film of the fluoric acid-based etching solution sprayed from the nozzle body 33a of the wedge-shaped nozzle 33, and the etching solution is sequentially supplied from the front end portion to the surface thereof. Next, the fluoric acid etching solution sprayed from the shower unit 34 passes through, and the entire surface of the substrate 100 is supplied with a uranium etching solution, and a certain etching is performed. If a fluoric acid-based etching solution is directly sprayed on the dry surface of the substrate 1000, the processing mark will appear on the part that first receives the droplets. However, if it passes through the film of the etching solution beforehand, it can be avoided on the surface. Providing an etchant while leaving any traces can prevent the processing traces caused by the shower treatment of the uranium etching solution. In addition, the fluoric acid-based etching solution will reach the back of the substrate 1000, and the etching solution will adhere to the part in contact with the conveying roller 31. When this part adheres to the dry back surface, dirt will form on the adhered part However, it remains. However, immediately after the substrate 100 enters the etching portion 30, it passes above the deep groove 73 and makes the entire back surface contact with the etching solution to become wet. Then, use -11-548697 V. Description of the invention (1〇 ) Spraying the shower unit 38 with the etching solution can prevent the back surface from drying out. Therefore, no dirt is formed when the etching part passes through the etching part and reaches the back surface with the blowing of the etching solution, or when the etching solution is partially adhered due to the contact with the conveying roller 31. The substrate 100 passing below the shower unit 34 passes below the air nozzle 36, removes the uranium engraving liquid on the surface, and enters the water washing section 40. When entering the water washing section 40, the substrate 100 passes above the deep groove 44 and then below the wedge-shaped nozzle 42. This is because passing through the deep groove 44 instantly replaces the chemical solution on the back surface with washing water and stops etching. Under the wedge-shaped nozzle 42, the chemical liquid on the surface is instantly replaced with washing water, and the etching is stopped. Pass the upper part of the deep groove 44 and the lower part of the wedge-shaped nozzle 42 and enter the substrate 100 of the water washing unit 40. After changing the direction, the washing water sprayed by the upper shower unit 43 and the lower shower unit is subjected to specific washing deal with. The substrate processing apparatus of the aforementioned embodiment is an etching apparatus for forming a contact window using a fluoric acid-based etching solution, but it can also be applied to other etching apparatuses, and is not limited to an engraving apparatus, and can also be used in a peeling apparatus. When used in a peeling device, it is more effective if a deep groove can be installed in the peeling part and the washing part. If there is a replacement part between the rain, it is also effective to install a deep groove in the replacement part. The peeling device will also produce backside dirt. The temperature of the chemical solution of the peeling device is higher than the temperature of the chemical solution of the etching process, and the back surface of the substrate is easy to dry to form dirt. A deep groove is provided at the entrance of the peeling part, which can not only prevent dirt on the back surface, but also prevent the peeling liquid from splashing to the upstream side, and prevent the upstream equipment from being peeled due to peeling. 12- 548697 V. Description of the invention (11) Leaving from the liquid and corroding At the same time, loss of the stripping liquid can also be avoided. A deep groove is provided at the entrance of the replacement part, which can not only prevent backside dirt, but also prevent the replacement liquid from splashing to the upstream peeling part. In the peeling part, the replacement water can be prevented from mixing into the peeling liquid. Useless consumption. If a deep groove can be provided at the entrance of the washing section, not only can the chemical liquid on the back of the substrate be replaced, but also the washing water can be prevented from mixing into the peeling section or replacement section, and the dilution loss of the peeling solution or replacement solution can be avoided. [Effects of the invention] As described above, the substrate processing apparatus of the present invention uses a deep groove provided under the substrate conveying line at the entrance portion of the processing section to allow the processing liquid to overflow and contact the entire back surface of the substrate. When the substrate is corroded by the liquid, it can prevent the chemical solution from reaching the back surface or the contact of the conveying roller to cause partial adhesion and form back surface dirt. The liquid washing section after the chemical liquid processing section can be quickly replaced with a chemical liquid. In addition, no matter the chemical liquid treatment or water washing treatment, the treatment liquid does not splash, so it can prevent the chemical liquid from splashing to the upstream side, and solve the problem of equipment corrosion of the chemical liquid, and the mixing of the washing water with the chemical liquid and increasing the cost of the chemical liquid. Problems etc. [Brief Description of the Drawings] FIG. 1 is a plan view of a conveyance type substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a side view of a main part of the substrate processing apparatus. Fig. 3 is a longitudinal sectional view of a deep groove provided in the main part and its vicinity. Fig. 4 is an arrow diagram of line A-A in Fig. 3. -13- 548697 V. Description of the invention (12) [Description of component symbols] 10 Receiving section 20 Draining section 30 Etching section 3 1 Conveying roller 33 Wedge nozzle 34, 38 Shower unit 36 Air nozzle 37 Deep groove 40 Washing section 41 Steering mechanism 42 Wedge-shaped nozzle 43 Shower unit 44 Deep groove 50 > 70 Transfer device 60 Spin dryer 80 Take-out section 90 Conveying device 100 Substrate -14-