JP4365192B2 - Transport type substrate processing equipment - Google Patents

Transport type substrate processing equipment Download PDF

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JP4365192B2
JP4365192B2 JP2003393368A JP2003393368A JP4365192B2 JP 4365192 B2 JP4365192 B2 JP 4365192B2 JP 2003393368 A JP2003393368 A JP 2003393368A JP 2003393368 A JP2003393368 A JP 2003393368A JP 4365192 B2 JP4365192 B2 JP 4365192B2
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substrate
liquid
cleaning
zone
water
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JP2005158911A (en
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大輔 菅長
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Sumitomo Precision Products Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/022Cleaning travelling work
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3042Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations

Description

本発明は、液晶パネル用ガラス基板の製造等に使用される基板処理装置に関し、更に詳しくは平流し式と呼ばれる基板搬送式の基板処理装置に関する。   The present invention relates to a substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal panel, and more particularly to a substrate transport type substrate processing apparatus called a flat flow type.

液晶パネルの製造では、素材である大面積のガラス基板の表面にレジスト塗布、現像、エッチング、レジスト剥離の各処理が繰り返し実施されることにより、基板表面に集積回路が形成される。各処理方式の代表的なものの一つが平流しと呼ばれる基板搬送方式であり、基板を水平方向に搬送しながらその表面に各種の処理を繰り返し行う。   In the manufacture of a liquid crystal panel, an integrated circuit is formed on the substrate surface by repeatedly performing resist coating, development, etching, and resist stripping on the surface of a large-area glass substrate that is a material. One of the representative processing methods is a substrate transfer method called flat flow, in which various processes are repeatedly performed on the surface of the substrate while transferring the substrate in the horizontal direction.

例えば、平流し式のレジスト剥離処理では、水平姿勢で水平方向に搬送される基板の表面に剥離液が供給され、次いでその表面が純水により洗浄される。剥離液としてはアミン系のように、水と混ざると強アルカリ性を示す有機剥離液が多用されている。このような剥離液により処理された基板の表面を直接水洗すると、強アルカリ液が生成され、これによって基板表面に染みなどが発生する。このため、剥離液による処理と水洗処理との間で、基板表面を置換液と呼ばれるジメチルスルホシキド(DMSO)などのアミンを含まない有機溶剤で置換洗浄するのが通例になっている。   For example, in the flat-flow resist stripping process, the stripping solution is supplied to the surface of the substrate that is transported horizontally in a horizontal posture, and then the surface is cleaned with pure water. As the stripping solution, organic stripping solutions that exhibit strong alkalinity when mixed with water, such as amine-based ones, are frequently used. When the surface of the substrate treated with such a stripping solution is washed directly with water, a strong alkaline solution is generated, which causes a stain or the like on the substrate surface. For this reason, it is a common practice to perform substitution cleaning on the substrate surface with an organic solvent not containing an amine such as dimethyl sulfoxide (DMSO) called a substitution solution between the treatment with the stripping solution and the water washing treatment.

置換ゾーンの出口部では、置換液が次の水洗ゾーンに侵入するのを阻止するために、基板の表面が乾燥しない程度にその表面に残存する処理液を除去することが行われている。この除去装置としては、エアをカーテン状に噴出するスリットノズルを用いたエアナイフ方式の除去装置が使用されている(特許文献1参照)。   At the outlet of the replacement zone, in order to prevent the replacement liquid from entering the next washing zone, the treatment liquid remaining on the surface is removed to such an extent that the surface of the substrate is not dried. As this removing device, an air knife type removing device using a slit nozzle that ejects air in a curtain shape is used (see Patent Document 1).

特開2003−92284号公報JP 2003-92284 A

しかしながら、エアナイフによる薬液除去では、基板の表面を乾燥させないためにエア圧を大きくできないこともあって、基板上に相当量の置換液が残り、これが基板と共に水洗ゾーンに持ち込まれる問題がある。水洗ゾーンでは、基板上に残る置換液を除去するために大量の純水が基板の表面にシャワーにより供給されるが、洗浄に使用された後の排水は置換液で激しく汚染されるため、浄化処理が困難な産業廃棄物が大量に生じ、処理コストの高騰が大きな問題となる。   However, when the chemical solution is removed by the air knife, the air pressure cannot be increased because the surface of the substrate is not dried, and there is a problem that a considerable amount of the replacement solution remains on the substrate and is brought into the water washing zone together with the substrate. In the water washing zone, a large amount of pure water is supplied to the surface of the substrate by a shower in order to remove the replacement liquid remaining on the substrate, but the waste water after being used for cleaning is heavily contaminated with the replacement liquid. A large amount of industrial waste that is difficult to process arises, and a rise in processing costs becomes a major problem.

この問題を解決するために、水洗ゾーンを2以上のチャンバーで構成し、前段のチャンバーで基板を粗洗浄し、後段のチャンバーで精密洗浄することが行われている。こうすると、前段のチャンバーでは汚染度の高い排水が生じるが、後段のチャンバーで生じる排水の汚染度は低くなり、後者の排水はバクテリアなどにより比較的簡単に浄化可能あることから、結果的に処理が困難な汚染度の高い排水の発生量が抑制されることになる。   In order to solve this problem, a water washing zone is composed of two or more chambers, the substrate is roughly cleaned in the former chamber, and the precision cleaning is performed in the latter chamber. In this way, highly polluted wastewater is produced in the former chamber, but the wastewater produced in the latter chamber is less polluted, and the latter wastewater can be purified relatively easily by bacteria. Therefore, the generation amount of highly polluted waste water that is difficult to control is suppressed.

しかしながら、このような対策によると、2以上のチャンバーで水洗ゾーンを構成する関係から、ライン長が長くなり、装置が大型化する。2以上のチャンバーを使用するとは言え、前段のチャンバーでは汚染度の高い排水が多量に生じ、その処理コストは安くはない。また、後段のチャンバーで使用する洗浄水の量も多い。   However, according to such measures, the line length becomes longer and the apparatus becomes larger due to the relation that the flush zone is constituted by two or more chambers. Although two or more chambers are used, a large amount of highly polluted waste water is generated in the former chamber, and the treatment cost is not low. In addition, the amount of washing water used in the latter chamber is large.

本発明の目的は、基板上に残る薬液を、短いライン長で効率的に除去し、汚染度の高い排水の発生量を大幅に低減し、洗浄水の使用量も合わせて低減することができる搬送式基板処理装置を提供することにある。   The object of the present invention is to efficiently remove the chemical solution remaining on the substrate with a short line length, greatly reduce the amount of wastewater with high pollution, and reduce the amount of cleaning water used. The object is to provide a transfer type substrate processing apparatus.

上記目的を達成するために、本発明の搬送式基板処理装置は、搬送される基板の表面に薬液を供給し、出口部に、基板上に残存する薬液をエアナイフにより除去する液切り手段を配置された薬液処理ゾーンと、薬液処理ゾーンから搬送されてくる基板の表面に洗浄水を散布して洗浄するシャワー式水洗ゾーンとを備えた搬送式基板処理装置において、前記薬液処理ゾーンと前記シャワー式水洗ゾーンとの間に、前記基板の表面に洗浄水をカーテン状に供給する液膜式洗浄手段と、前記液膜式洗浄手段の下流側に配置され、洗浄水を薄膜状に且つ基板搬送方向上流側へ傾斜させて基板の表面に噴出して基板上に残る洗浄液を置換する液ナイフによる液切り手段とを組み合わせた粗洗浄ゾーンを設けたものである。そして、前記液切り手段は、洗浄水を三角形状の薄膜に吐出する複数のフラットノズルを、基板幅方向に連続した液ナイフを形成するべく基板搬送方向に直角な方向に配列することにより構成されている。 In order to achieve the above object, the transport type substrate processing apparatus of the present invention is arranged with a liquid draining means for supplying a chemical solution to the surface of the substrate to be transported and removing the chemical solution remaining on the substrate with an air knife at the outlet portion. In the transport type substrate processing apparatus comprising: the chemical solution processing zone that has been performed; and the shower type water washing zone that sprays and cleans the cleaning water on the surface of the substrate transported from the chemical solution processing zone, the chemical solution processing zone and the shower type A liquid film type cleaning means for supplying cleaning water to the surface of the substrate in the form of a curtain between the water washing zone and a downstream side of the liquid film type cleaning means, and the cleaning water is arranged in a thin film and in the substrate transport direction. A rough cleaning zone is provided, which is combined with a liquid cutting means using a liquid knife that inclines to the upstream side and is ejected onto the surface of the substrate to replace the cleaning liquid remaining on the substrate. The liquid draining means is configured by arranging a plurality of flat nozzles for discharging cleaning water onto a triangular thin film in a direction perpendicular to the substrate transport direction so as to form a liquid knife continuous in the substrate width direction. ing.

本発明の搬送式基板処理装置においては、薬液処理ゾーンとシャワー式水洗ゾーンとの間に設けた粗洗浄ゾーンにより、基板上に残る薬液の大部分が除去される。薬液処理ゾーンの出口部に、基板上に残存する薬液をエアナイフにより除去する液切り手段が配置されているので、汚染度の高い排水の発生量が低減する。粗洗浄ゾーンは、液膜式洗浄手段と液ナイフによる液切り手段との組合せにより、シャワーより格段に短いラインで、しかも僅かの水量により効果的に薬液を除去できる。このため、汚染度の高い排水の発生量が激減する。これに続くシャワー式水洗ゾーンは精密洗浄ゾーンとなる。粗洗浄ゾーンで効率の高い洗浄が行われることにより、シャワー式水洗ゾーンでは水量の低減、これによる汚染度の低い排水の発生量の低減も可能になる。粗洗浄ゾーンにおける液ナイフによる液切り手段が、フラットノズルの組合せにより構成されているため、基板の表面に付着する洗浄水を除去する効果が特に高い。 In the transfer type substrate processing apparatus of the present invention, most of the chemical remaining on the substrate is removed by the rough cleaning zone provided between the chemical processing zone and the shower type water washing zone. Since the liquid draining means for removing the chemical liquid remaining on the substrate with an air knife is disposed at the outlet of the chemical liquid processing zone, the amount of wastewater with a high degree of contamination is reduced. In the rough cleaning zone, a combination of a liquid film type cleaning means and a liquid cutting means using a liquid knife enables a chemical solution to be effectively removed with a much shorter line than a shower and with a small amount of water. For this reason, the generation amount of highly polluted wastewater is drastically reduced. The shower-type water washing zone that follows this becomes a precision washing zone. By performing high-efficiency cleaning in the rough cleaning zone, it is possible to reduce the amount of water in the shower-type water-washing zone, thereby reducing the amount of wastewater with a low degree of contamination. Since the liquid cutting means by the liquid knife in the rough cleaning zone is constituted by a combination of flat nozzles, the effect of removing the cleaning water adhering to the surface of the substrate is particularly high.

排水の持ち出し量を低減するために、シャワー式洗浄ゾーンの出口部に、洗浄水を薄膜状に噴出して基板上に残る洗浄液を置換する液ナイフによる液切り手段を配置するのがよい。 In order to reduce the amount of discharged wastewater, it is preferable to dispose a liquid draining means by a liquid knife that ejects cleaning water in a thin film shape to replace the cleaning liquid remaining on the substrate at the outlet of the shower type cleaning zone.

本発明の搬送式基板処理装置は、薬液処理ゾーンとシャワー式水洗ゾーンとの間に、薬液処理ゾーンの出口部に設けられるエアナイフによる液切り手段とは別に、基板の表面に洗浄水をカーテン状に供給する液膜式洗浄手段と、洗浄水を薄膜状に噴出して基板上に残る洗浄液を置換する、複数のフラットノズルからなる液ナイフによる液切り手段とを組み合わせた粗洗浄ゾーンを設けることにより、基板上に残る薬液を少ない洗浄水で効率的に除去できる。したがって、洗浄水の使用量を低減できると共に、汚染度の高い排水の発生量を大幅に低減でき、その処理負担を軽減できる。また、粗洗浄ゾーンをシャワー方式に比べて短くできるので、ライン長を短縮できる。 The transfer type substrate processing apparatus of the present invention has a curtain-like cleaning water on the surface of the substrate separately from a liquid draining means by an air knife provided at the outlet of the chemical processing zone between the chemical processing zone and the shower type water washing zone. A rough cleaning zone is provided by combining a liquid film type cleaning means to be supplied to the liquid and a liquid cutting means using a liquid knife composed of a plurality of flat nozzles to eject cleaning water into a thin film to replace the cleaning liquid remaining on the substrate. Thus, the chemical solution remaining on the substrate can be efficiently removed with a small amount of cleaning water. Therefore, the amount of cleaning water used can be reduced, the amount of wastewater with a high degree of contamination can be greatly reduced, and the treatment burden can be reduced. Further, since the rough cleaning zone can be shortened as compared with the shower method, the line length can be shortened.

以下に本発明の実施形態を図面に基づいて説明する。図1は本発明の一実施形態を示す搬送式基板処理装置の構造説明図ある。   Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view of the structure of a transfer type substrate processing apparatus showing an embodiment of the present invention.

本実施形態の搬送式基板処理装置は、液晶表示装置用ガラス基板を製造するためのレジスト剥離装置である。このレジスト剥離装置は、水平姿勢で水平方向に搬送されるガラス基板10が剥離ゾーン20、粗洗浄ゾーン30及び精密洗浄ゾーン40を順番に通過する構成になっている。各ゾーンはチャンバーにより構成されている。基板搬送機構は、基板搬送方向に配列された多数個の搬送ローラ50により、ガラス基板10を下方から支持しつつ搬送する。   The transport type substrate processing apparatus of this embodiment is a resist peeling apparatus for manufacturing a glass substrate for a liquid crystal display device. This resist stripping apparatus is configured such that a glass substrate 10 conveyed in a horizontal orientation in a horizontal posture passes through a stripping zone 20, a rough cleaning zone 30, and a precision cleaning zone 40 in order. Each zone is constituted by a chamber. The substrate transport mechanism transports the glass substrate 10 while supporting the glass substrate 10 from below by a large number of transport rollers 50 arranged in the substrate transport direction.

剥離ゾーン20は、基板10の表面に剥離液を供給する第1のシャワーユニット、基板10の表面に置換液を供給する第2のシャワーユニット21などを有している。剥離ゾーン20の出口部には、基板10の搬送ラインを挟む上下1対の液切り手段22,22が、シャワーユニット21の下流側に位置して設けられている。液切り手段22,22は、エアナイフを形成するスリットノズルであり、このエアナイフを基板10の表面及び裏面に上流側へ傾斜させて衝突させることにより、基板10の表面及び裏面を乾燥させることなく表面及び裏面に付着残存する置換液を除去する。   The peeling zone 20 includes a first shower unit that supplies a peeling liquid to the surface of the substrate 10, a second shower unit 21 that supplies a replacement liquid to the surface of the substrate 10, and the like. At the exit of the peeling zone 20, a pair of upper and lower liquid draining means 22, 22 sandwiching the transport line of the substrate 10 is provided on the downstream side of the shower unit 21. The liquid draining means 22 and 22 are slit nozzles that form air knives, and the air knives are made to incline and collide with the front and back surfaces of the substrate 10 upstream so that the front and back surfaces of the substrate 10 are not dried. And the replacement liquid remaining on the back surface is removed.

粗洗浄ゾーン30は、基板10の表面に洗浄水をカーテン状に供給する液膜式洗浄手段31と、液膜式洗浄手段31の下流側に配置された液ナイフによる液切り手段32,32とを備えている。液膜式洗浄手段31は、基板搬送ラインの上方に設けられた複数のフラットノズルからなる。複数のフラットノズルは、洗浄水を三角形状の薄膜に吐出する山型フラットノズルであり、板幅方向に連続したカーテン状の水膜を形成するべく、基板搬送方向に直角な方向に配列されている。ゾーン長は、従来から使用されているシャワー式水洗ゾーン(前段の粗洗浄ゾーン)より大幅に短くなっている。   The rough cleaning zone 30 includes a liquid film type cleaning unit 31 that supplies cleaning water to the surface of the substrate 10 in a curtain shape, and liquid draining units 32 and 32 using a liquid knife disposed downstream of the liquid film type cleaning unit 31. It has. The liquid film type cleaning means 31 includes a plurality of flat nozzles provided above the substrate transfer line. The plurality of flat nozzles are mountain-shaped flat nozzles that discharge cleaning water into a triangular thin film, and are arranged in a direction perpendicular to the substrate transport direction to form a curtain-shaped water film continuous in the plate width direction. Yes. The zone length is significantly shorter than the conventionally used shower type water washing zone (previous coarse washing zone).

液ナイフによる液切り手段32,32は、基板搬送ラインの上方及び下方に設けられており、いずれも複数のフラットノズルからなる。複数のフラットノズルは、洗浄水を三角形状の薄膜に吐出する山型フラットノズルであり、板幅方向に連続した液ナイフを形成するべく、基板搬送方向に直角な方向に配列されている。そして、この液ナイフを基板10の表面及び裏面に上流側へ傾斜させて衝突させることにより、基板10の表面及び裏面に付着残存する洗浄水を新しい洗浄液と置換する。   The liquid cutting means 32, 32 using the liquid knife are provided above and below the substrate transfer line, and each includes a plurality of flat nozzles. The plurality of flat nozzles are mountain-shaped flat nozzles that discharge cleaning water onto a triangular thin film, and are arranged in a direction perpendicular to the substrate transport direction so as to form a liquid knife continuous in the plate width direction. Then, the liquid knife is made to incline and collide with the front surface and back surface of the substrate 10 upstream, thereby replacing the cleaning water remaining on the front surface and back surface of the substrate 10 with new cleaning liquid.

精密洗浄ゾーン40は、従来から使用されているシャワー式水洗ゾーン(後段の精密洗浄ゾーン)と実質的に同じ構造であり、基板10の表面に大量の洗浄水を広範囲に散布するシャワーユニット41を備えている。精密洗浄ゾーン40の出口部には、液ナイフによる液切り手段42,42が設けられている。液ナイフによる液切り手段42,42は、前記液切り手段32,32と同様に、基板搬送ラインの上方及び下方に設けられた複数の山型フラットノズルからなり、形成した液ナイフを基板10の表面及び裏面に上流側へ傾斜させて衝突させることにより、基板10の表面及び裏面に付着残存する洗浄水を、新しい洗浄水と置換して除去する。   The precision cleaning zone 40 has substantially the same structure as a conventionally used shower-type water cleaning zone (precise cleaning zone in the subsequent stage), and a shower unit 41 that spreads a large amount of cleaning water over the surface of the substrate 10 over a wide area. I have. At the outlet of the precision cleaning zone 40, liquid draining means 42, 42 by a liquid knife are provided. Similarly to the liquid draining means 32, 32, the liquid cutting means 42, 42 using a liquid knife is composed of a plurality of mountain-shaped flat nozzles provided above and below the substrate transfer line. By inclining and colliding with the front and back surfaces upstream, the cleaning water remaining on the front and back surfaces of the substrate 10 is replaced with new cleaning water and removed.

次に、本実施形態の搬送式基板処理装置の機能について説明する。   Next, functions of the transport type substrate processing apparatus of the present embodiment will be described.

ガラス基板10が剥離ゾーン20を通過する間に、基板10の表面にシャワーユニットなどから剥離液が大量に供給される。これにより、基板10の表面に付着するレジストが溶解除去される。引続き、基板10の表面にシャワーユニット21から置換液が供給される。そして、出口部で基板10の表面及び裏面に付着残存する置換液が、エアナイフ方式の液切り手段22,22により除去される。   While the glass substrate 10 passes through the peeling zone 20, a large amount of peeling liquid is supplied to the surface of the substrate 10 from a shower unit or the like. Thereby, the resist adhering to the surface of the substrate 10 is dissolved and removed. Subsequently, the replacement liquid is supplied from the shower unit 21 to the surface of the substrate 10. Then, the replacement liquid remaining on the front and back surfaces of the substrate 10 at the outlet is removed by the air knife type liquid draining means 22 and 22.

剥離ゾーン20を出た基板10は引き続いて粗洗浄ゾーン30に進入する。粗洗浄ゾーン30では、液膜式洗浄手段31からカーテン状に噴出される洗浄水の中を基板10が通過することにより、基板10の表面に洗浄水が高密度で供給される。その後、基板10の表面及び裏面に付着残存する洗浄水が、液ナイフ方式の液切り手段32,32により除去される。   The substrate 10 exiting the peeling zone 20 subsequently enters the rough cleaning zone 30. In the rough cleaning zone 30, the cleaning water is supplied to the surface of the substrate 10 at a high density as the substrate 10 passes through the cleaning water ejected in a curtain form from the liquid film type cleaning means 31. Thereafter, the cleaning water adhering and remaining on the front and back surfaces of the substrate 10 is removed by the liquid knife type liquid draining means 32 and 32.

液切り手段32,32で形成された液ナイフは、搬送されるガラス基板10の表面にエアナイフのようにカウンター方向に傾斜して衝突する。これにより、ガラス基板10の表面及び裏面に付着する洗浄水がエアナイフと同様の原理により効率的に除去されるが、液ナイフの強さに関係なくガラス基板10の表面及び裏面に僅かの量の洗浄水が均一に分布して残るため、エアナイフのようにガラス基板10の表面及び裏面を乾燥させるおそれがない。   The liquid knife formed by the liquid draining means 32, 32 collides with the surface of the glass substrate 10 to be conveyed while being inclined in the counter direction like an air knife. As a result, the cleaning water adhering to the front and back surfaces of the glass substrate 10 is efficiently removed according to the same principle as that of the air knife, but a small amount of water is applied to the front and back surfaces of the glass substrate 10 regardless of the strength of the liquid knife. Since the cleaning water remains evenly distributed, there is no possibility of drying the front and back surfaces of the glass substrate 10 unlike an air knife.

加えて、液切り手段32,32は、フラットノズルの組合せにより構成されており、スリットノズルで液ナイフを形成する場合と比べ、少ない流量で大きな打撃力が得られる。このため、ガラス基板10の表面及び裏面に付着する洗浄水を除去する効果が特に高く、しかも使用水量が少なく、経済性に優れる。   In addition, the liquid draining means 32, 32 is configured by a combination of flat nozzles, and a large striking force can be obtained with a smaller flow rate than when a liquid knife is formed with a slit nozzle. For this reason, the effect of removing the washing water adhering to the front surface and the back surface of the glass substrate 10 is particularly high, and the amount of water used is small, and the economy is excellent.

粗洗浄ゾーン30を出た基板10は引き続いて精密洗浄ゾーン40に進入する。精密洗浄ゾーン40では、シャワーユニット41から噴出される洗浄水のシャワー中を基板10が通過することにより、基板10の表面が精密洗浄される。出口では、基板10の表面及び裏面に付着残存する洗浄水が、液ナイフ方式の液切り手段42,42により除去される。液ナイフ方式の液切り手段42,42の優位性は前述したとおりである。   The substrate 10 that has exited the rough cleaning zone 30 subsequently enters the precision cleaning zone 40. In the precision cleaning zone 40, the surface of the substrate 10 is precisely cleaned as the substrate 10 passes through the shower of cleaning water ejected from the shower unit 41. At the outlet, the cleaning water adhering and remaining on the front and back surfaces of the substrate 10 is removed by the liquid knife type liquid draining means 42 and 42. The advantages of the liquid knife type liquid draining means 42 are as described above.

このような粗洗浄ゾーン30と精密洗浄ゾーン40とを組み合わせた水洗処理によると、粗洗浄ゾーン30では、基板10の表面及び裏面に付着残存する置換液の大部分が洗浄水と置換されるが、その結果として置換液により高濃度に汚染された排水が発生する。しかし、粗洗浄ゾーン30では、液膜式洗浄手段31と液ナイフ方式の液切り手段32,32との組合せにより、洗浄が行われるため、粗洗浄をシャワーで行う場合と比べて洗浄水の使用量を大幅に少なくできる。具体的には1/5程度に低減できる。このため、汚染度の高い排水の発生量も大幅に少なくなる。   According to the water washing process in which the rough cleaning zone 30 and the precision cleaning zone 40 are combined, in the rough cleaning zone 30, most of the substitution liquid remaining on the front surface and the back surface of the substrate 10 is replaced with the cleaning water. As a result, wastewater contaminated with a high concentration by the replacement liquid is generated. However, in the rough cleaning zone 30, the cleaning is performed by the combination of the liquid film type cleaning means 31 and the liquid knife type liquid draining means 32, 32, so that the cleaning water is used in comparison with the case where the rough cleaning is performed in the shower. The amount can be greatly reduced. Specifically, it can be reduced to about 1/5. For this reason, the amount of wastewater with a high degree of pollution is greatly reduced.

精密洗浄ゾーン40では、基板10の表面及び裏面に付着残存する置換液の大部分が既に置換されているので、排水の汚染度は低く、発生量も少なくなる。ここで発生する低汚染度の排水はバクテリア等による生物処理で簡単に浄化することができる。ちなみに、粗洗浄ゾーン30で発生する高汚染度の排水処理は次のようにして行う。回収し、民間の処理業者等で廃液処理するのが一般的である。   In the precision cleaning zone 40, most of the replacement liquid remaining on the front and back surfaces of the substrate 10 has already been replaced, so that the degree of contamination of the waste water is low and the generation amount is also small. The low-contamination wastewater generated here can be easily purified by biological treatment with bacteria or the like. Incidentally, wastewater treatment with a high degree of contamination occurring in the rough cleaning zone 30 is performed as follows. Generally, it is collected and treated as a waste liquid by a private processor.

液膜式洗浄手段31における洗浄水の吐出条件については、基板幅100mmあたり1〜2L/minが好ましい。洗浄水の吐出量が少ないと洗浄効果が不足する。多すぎる場合は水コストが不必要に増大すると共に、下流側に配置された液ナイフ式の液切り手段32の負担が大きくなる。   About the discharge conditions of the washing water in the liquid film type washing | cleaning means 31, 1-2 L / min per 100 mm of substrate widths is preferable. If the discharge amount of cleaning water is small, the cleaning effect is insufficient. When the amount is too large, the water cost increases unnecessarily, and the burden on the liquid knife type liquid draining means 32 disposed on the downstream side increases.

また、液ナイフ式の液切り手段32,42における洗浄水の吐出量については、基板幅100mmあたり1.5〜3L/minが好ましい。これが少ないと液切り性が悪化し、多い場合は液切り後の残液が多くなり、液コストが増大する。液切り手段32,42における液ナイフの基板表面に対する傾斜角度は30〜50度が好ましい。この傾斜角度が小さすぎる場合は吐出方向にミストが大量飛散し、再付着、均一性の低下が問題になる。大きすぎる場合は液切り性が悪化し、吐出液の逆流も問題になる。これらの条件設定により、液切り後の基板表面上の残液量として、膜厚で理想的な0.05〜0.2mmが確保される。   The discharge amount of the cleaning water in the liquid knife type liquid draining means 32, 42 is preferably 1.5 to 3 L / min per 100 mm of the substrate width. When the amount is small, the liquid draining property is deteriorated. When the amount is large, the residual liquid after the liquid is drained increases, and the liquid cost increases. The inclination angle of the liquid knife with respect to the substrate surface in the liquid draining means 32, 42 is preferably 30 to 50 degrees. When this inclination angle is too small, a large amount of mist is scattered in the discharge direction, and reattachment and uniformity are problematic. When it is too large, the liquid drainage property is deteriorated, and the backflow of the discharged liquid becomes a problem. By setting these conditions, an ideal film thickness of 0.05 to 0.2 mm is ensured as the remaining liquid amount on the substrate surface after the liquid is drained.

上記実施形態はレジスト剥離装置への適用例であるが、これ以外にもエッチング装置、現像装置など、薬液処理後に水洗処理を必要とするウエット処理への適用可能である。また、剥離ゾーン10では剥離液及び置換液を使用したが、置換液が不要な場合もあり、その場合は粗洗浄ゾーン30及び精密洗浄ゾーン40で剥離液を置換することになる。   The above embodiment is an example of application to a resist stripping apparatus, but other than this, it can be applied to a wet process that requires a water washing process after a chemical process, such as an etching apparatus or a developing apparatus. Further, the stripping solution and the replacement solution are used in the stripping zone 10, but the replacement solution may not be necessary. In this case, the stripping solution is replaced by the rough cleaning zone 30 and the precision cleaning zone 40.

本発明の一実施形態を示す搬送式基板処理装置の構造説明図である。It is structure explanatory drawing of the conveyance type substrate processing apparatus which shows one Embodiment of this invention.

符号の説明Explanation of symbols

10 基板
20 剥離ゾーン
21 シャワーユニット
22 エアナイフによる液切り手段
30 粗洗浄ゾーン
31 液膜式洗浄手段
32 液ナイフによる液切り手段
40 精密洗浄ゾーン(シャワー式水洗ゾーン)
41 シャワーユニット
42 液ナイフによる液切り手段
50 搬送ローラ
DESCRIPTION OF SYMBOLS 10 Substrate 20 Stripping zone 21 Shower unit 22 Liquid cutting means with air knife 30 Coarse cleaning zone 31 Liquid film type cleaning means 32 Liquid cutting means with liquid knife 40 Precision cleaning zone (shower type water washing zone)
41 Shower unit 42 Liquid draining means with liquid knife 50 Conveying roller

Claims (2)

搬送される基板の表面に薬液を供給し、出口部に、基板上に残存する薬液をエアナイフにより除去する液切り手段を配置された薬液処理ゾーンと、薬液処理ゾーンから搬送されてくる基板の表面に洗浄水を散布して洗浄するシャワー式水洗ゾーンとを備えた搬送式基板処理装置において、前記薬液処理ゾーンと前記シャワー式水洗ゾーンとの間に、前記基板の表面に洗浄水をカーテン状に供給する液膜式洗浄手段と、前記液膜式洗浄手段の下流側に配置され、洗浄水を薄膜状に且つ基板搬送方向上流側へ傾斜させて基板の表面に噴出して基板上に残る洗浄液を置換する液ナイフによる液切り手段とを組み合わせた粗洗浄ゾーンを設け、前記液切り手段は、洗浄水を三角形状の薄膜に吐出する複数のフラットノズルを、基板幅方向に連続した液ナイフを形成するべく基板搬送方向に直角な方向に配列することにより構成されている搬送式基板処理装置。 A chemical solution processing zone in which a chemical solution is supplied to the surface of the substrate to be transported and a liquid draining means for removing the chemical solution remaining on the substrate with an air knife is disposed at the outlet, and the surface of the substrate transported from the chemical solution processing zone In the transport type substrate processing apparatus having a shower type water washing zone for spraying and cleaning water on the surface of the substrate, the cleaning water is curtained between the chemical treatment zone and the shower type water washing zone. A liquid film type cleaning means to be supplied and a cleaning liquid which is disposed on the downstream side of the liquid film type cleaning means and which is left on the substrate after being sprayed on the surface of the substrate by inclining the cleaning water in the form of a thin film and upstream in the substrate transport direction the rough cleaning zone of a combination of a liquid removal means by a liquid knife replacing provided, the liquid cutting means, a plurality of flat nozzles for discharging washing water into a thin film of a triangle, is continuous in the substrate width direction liquid Conveying type substrate processing apparatus configured by arranging in a direction perpendicular to the substrate conveying direction to form a IF. 前記シャワー式洗浄ゾーンの出口部に、洗浄水を薄膜状に噴出して基板上に残る洗浄液を置換する液ナイフによる液切り手段を配置したことを特徴とする請求項1に記載の搬送式基板処理装置。   2. The transportable substrate according to claim 1, wherein a liquid cutting means using a liquid knife is disposed at the outlet of the shower-type cleaning zone to eject cleaning water into a thin film and replace the cleaning liquid remaining on the substrate. Processing equipment.
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