554391 五、 發明說明 ( 1： ) [ 發 明所屬 技 術 領域 ] 本 發 明係 關 於 液晶 顯示 裝置 用玻璃 基板 之 製 造等所使用 的 輸 送 式基 板 處 理裝 置。 [ 習 知技術 ] 液 晶 顯示 裝 置 上所使用 之玻 璃基板 ，係 藉 由在屬坯料之 玻 璃 基 板的 表 面 ，重 複實 施蝕 刻、剝 離等 之 化 學處理來進 行 製 造 。該 處 理 裝置 可大 致分成乾式及濕 式 濕式又可分 爲 批 量 式及 多 室 式。 又， 多室 式又細 分成 旋 轉 式及滾筒輸 送 等 之 輸送 式 〇 這 基板 處 理 裝置 當中 ，輸 送式者 之基 本 構 成係以大致 水平 方 向輸 送 基 板並 對該 基板 表面供 應處 理 液 ，因爲具有 較 高 效 率而 白 以 往即 被使 用於 触刻處: 理及剝丨 雛j 處理上。 使用 於蝕 刻 處 理之 輸送 式基 板處理 裝置 中 ， 係從以矩陣 狀 配 置 於基 板 輸 送線 上方之多 數噴霧 出 蝕 刻液，利用 使 基 板 通過 此 蝕 刻液 中之 方式 對基板 表面 整 體 供應蝕刻液 0 此 簇 射處 理 可對 除了 塗敷 遮罩材料部份以外之基板表 面 進 行 選擇 式 鈾 刻。 蝕刻 結束 後，再 利用 簇 射 進行洗淨處 理 〇 基 本上 剝 離處 理用 者亦 具有同: 樣構丨 成 〇 [ 發 明所欲 解 決 之問 題】 然 而 ，液 晶 顯 示裝 置用 玻璃 基板則 不斷 推 動 基板之大型 化及 電 路之 局 精 細化 。以 刖， 該基板 上之 配 線 材料大多採 用 Cr， 然而， 隨著最近之 :局精 4田化， 正試 圖 改 換成比電阻 値 較 小 之A1 或 Al/Mo。 因此 -3 ，蝕刻 用之 輸 送 式基板處理 554391 五、發明說明（2) 裝置亦開始使用A1用蝕刻液，然而，隨著此蝕刻液之使 用，卻發現了下列問題。 A1用蝕刻液的黏度高於Cr用蝕刻液之黏度，又對玻璃 基板表面之可濕性較差。又，且鈾刻率亦高於使用Cr用 蝕刻液之Cr的蝕刻率。因此，簇射處理開始時，蝕刻液 之細液滴衝撞乾燥面之部份會形成處理痕跡，在其後之簇 射處理亦無法消除，蝕刻後亦會留下處理痕跡。 爲解決此處理痕跡之問題，在簇射處理前，實施使基板 通過楔形噴嘴噴出之蝕刻液的膜中之液膜處理，是十分有 效的方法。使基板通過蝕刻液的膜中之後，可以使基板表 面在不會形成痕跡下變得潮濕。只要在未形成痕跡之狀態 變得潮濕，則其後即使接受簇射處理，亦不會因爲液滴而 出現處理痕跡。 又，在蝕刻後之水洗處理時，爲了實現快速之藥液置換 ，在簇射處理前，實施使基板通過由楔形噴嘴噴出之洗淨 水的膜中之液膜處理，也是有效的方法。 然而，在簇射處理前之這些液膜處理時，處理液會強力 衝撞基板表面，故處理液會在基板表面上等擴散，而有可 能侵入上游側之處理部。蝕刻液若侵入上游側之處理部， 則會發生腐蝕等問題。又，也會增加蝕刻液之損失，而增 加蝕刻液成本。洗淨水若侵入上游側之處理部，亦即是侵 入蝕刻部，則蝕刻液會被稀釋而無法再循環使用，此時亦 會增加蝕刻液成本。 554391 五、發明說明（3) 若增加楔形噴嘴至入口側之處理部的距離，雖然可解決 此問題，卻發生設備大型化之問題。本發明之目的，依提 供一基板處理裝置，其可防止簇射處理前之液膜處理中之 藥液飛濺至上游側之問題。 【解決問題之手段】 爲了達成前述目的，本發明之基板處理裝置，係在大致 水平方向使基板通過複數處理部且在各處理部對基板表面 供應理液之輸送式基板處理裝置上，在複數處理部之入口 部份，以跨越基板之整個橫向設置噴出膜狀處理液之液膜 式楔形噴嘴，而前述楔形噴嘴上，設有可防止該楔形噴嘴 噴出之處理液飛濺至入口側的屏蔽構件。 前述楔形噴嘴最好爲可改變處理液噴出方向之構成。利 用前述構成，可以從基板之行進方向的斜向噴出處理液， 可更有效地防止藥液飛散至上游側。 前述屏蔽構件係兼具爲導引板，其以和噴出方向成斜向 相交之方式裝配於處理液之噴出口附近，用以使噴出液轉 向至偏離入口者，在防止飛濺效果之考量點上是令人滿意 的。 前述楔形噴嘴若能組合於簇射單元，則特別具有功效， 前述簇射單元係利用配置於基板之行進方向、及和該行進 方向互相垂直之多數個噴霧嘴對基板表面整體供應處理液 〇 本發明之基板處理裝置可適用於蝕刻裝置，亦可適用於 554391 五、發明說明（4) 剝離裝置。蝕刻裝置時，前述楔形噴嘴對蝕刻部及水洗部 有效。剝離裝置之構成上，則是對基板表面供應剝離液後 ，對其表面進行水洗，而在供應剝離液之剝離部及水洗部 之間，可以夾著置換部或不夾著置換部。置換部係在剝離 液和水相混時會產生問題時，將基板表面上之剝離液暫時 置換成暫且不會產生問題之藥液的部份。在剝離裝置之楔 形噴嘴其對於剝離部及水洗部有效，其間夾著置換部時， 對該置換部亦有效。 以和水混合而會發生問題之剝離液來說，例如有， MEA(乙醇胺）、或MEA及DMSO(二甲亞珮）之混合液等。 MEA和水混合會變成強鹼，會損壞設備等。相對於此，水 系剝離液就不會發生問題，而無需置換。針對前述2種剝 離液，通常會採用DMSO當做置換液。其他剝離液則會採 用IPA(異戊二烯乙醇）等。 【發明之實施形態】 以下係參照圖面明本發明實施形態。第1圖係本發明之 1實施形態的水平輸送式基板處理裝置之平面圖，第2圖 係該基板處理裝置之主要部位的側面圖，第3圖則係配置 於該主要部位之楔形噴嘴的縱剖面圖。 本實施形態之水平輸送式基板處理裝置係使用於液晶顯 示裝置用玻璃基板1〇〇(以下簡稱爲基板1〇〇)之A1蝕刻處 理。如第1圖所示，此基板處理裝置之配置上，採用由直 線狀之第1線A、和第1線A成垂直連接之第2線B、及和 554391 五、發明說明（5) 第2線B垂直連接並和第1線平行之第3線C組合而成之 U形佈局。 第1線A係由受取部10、排液部20、及蝕刻部30以直 線連結方式構成。第2線B則爲水洗部40。第3線C係 由移載裝置50、自旋乾燥機60、移載裝置70、及取出部 80以直線連結方式構成。 第1線A及第2線B爲了在線之縱向輸送基板100，故 具有在輸送方向上隔著一定間隔並列之多數輸送滾筒。各 輸送滾筒皆爲和輸送方向成垂直之水平滾筒。第2線B， 亦即水洗部40之入口部上，設有將基板1〇〇之行進方向 改變90度之轉向機構41。 接受A1蝕刻處理之基板100，以輸送裝置90送入受取 部10。該基板1〇〇從排液部20以滾筒輸送至蝕刻部30， 通過時實施蝕刻處理。通過蝕刻部30之基板1 00接著被 以滾筒輸送至水洗部40,改變90度之行進方向並移動水 洗部40，在移動期間實施水洗處理。 被移動至水洗部40之出口部的基板100，係利用移載裝 置50將其從水洗部40輸送至自旋乾燥機60。在自旋乾燥 機60完成乾燥後之基板100，係利用移載裝置70將其從 自旋乾燥機60輸送至取出部80，然後，再由輸送裝置90 輸送至裝置外。 本實施形態之水平輸送式基板處理裝置之最大特徵，就 是蝕刻部30及水洗部40。554391 V. Description of the invention (1 :) [Technical field of the invention] The present invention relates to a transmission-type substrate processing device used for the manufacture of a glass substrate for a liquid crystal display device. [Known technology] The glass substrate used in the liquid crystal display device is manufactured by repeating the chemical treatments such as etching, peeling, etc., on the surface of the glass substrate which is a blank. The processing device can be roughly divided into dry and wet types and can be divided into batch type and multi-chamber type. In addition, the multi-chamber type is further divided into rotary type and roller type conveying type. Among the substrate processing apparatuses, the basic structure of the conveying type is to convey the substrate in a substantially horizontal direction and supply a processing liquid to the substrate surface because it has a high Efficiency and whiteness have been used in the past: processing and stripping. In a conveying substrate processing apparatus used for etching processing, an etching solution is sprayed from most of the substrates arranged in a matrix above the substrate conveying line, and the etching solution is supplied to the entire surface of the substrate by passing the substrate through the etching solution. The radiation treatment can selectively perform uranium engraving on the surface of the substrate other than the portion where the mask material is applied. After the etching is completed, a shower is used to perform a cleaning process. Basically, the peeling process also has the same effect as the following: [The problem to be solved by the invention] However, the glass substrate for liquid crystal display devices continues to promote the large size of the substrate. And circuit refinement. For example, Cr is mostly used as the wiring material on this substrate. However, with the recent development of the local precision 4 field, it is trying to change to A1 or Al / Mo with a smaller specific resistance 値. Therefore, -3, transport substrate processing for etching 554391 V. Description of the Invention (2) The device also began to use the etching solution for A1. However, with the use of this etching solution, the following problems were found. The viscosity of the etching solution for A1 is higher than that of the etching solution for Cr, and the wettability to the surface of the glass substrate is poor. Moreover, the etching rate of uranium is higher than that of Cr using an etching solution for Cr. Therefore, at the beginning of the shower process, the fine liquid droplets of the etching solution collide with the part of the dry surface to form a processing mark. The subsequent shower process cannot be eliminated, and the processing mark will remain after the etching. In order to solve the problem of processing traces, it is very effective to perform a liquid film treatment in a film of an etching solution which is ejected from a substrate through a wedge nozzle before the shower processing. After the substrate is passed through the film of the etching solution, the surface of the substrate can be made moist without forming traces. As long as it becomes moist in a state where no marks are formed, the treatment marks will not appear due to droplets even after the shower treatment is performed. In addition, in the water washing process after etching, in order to achieve rapid chemical liquid replacement, it is also an effective method to perform a liquid film process in which a substrate is passed through a film of washing water sprayed from a wedge nozzle before the shower process. However, during these liquid film treatments before the shower processing, the processing liquid strongly impacts the surface of the substrate, so the processing liquid may diffuse on the surface of the substrate, etc., and may enter the processing portion on the upstream side. If the etchant enters the processing part on the upstream side, problems such as corrosion may occur. In addition, the loss of the etchant is increased, and the cost of the etchant is increased. If the washing water enters the processing part on the upstream side, that is, it enters the etching part, the etching solution will be diluted and cannot be recycled, and the cost of the etching solution will also increase. 554391 V. Description of the invention (3) If the distance between the wedge nozzle and the processing part on the inlet side is increased, this problem can be solved, but the problem of large-scale equipment occurs. It is an object of the present invention to provide a substrate processing apparatus which can prevent the problem that the chemical liquid in the liquid film processing before the shower processing splashes to the upstream side. [Means for Solving the Problem] In order to achieve the aforementioned object, the substrate processing apparatus of the present invention is a conveyance type substrate processing apparatus that passes a substrate through a plurality of processing units in a substantially horizontal direction and supplies a processing fluid to the substrate surface at each processing unit. The entrance part of the processing part is provided with a liquid film wedge nozzle that discharges a film-like processing liquid across the entire width of the substrate, and the aforementioned wedge nozzle is provided with a shielding member that can prevent the processing liquid from the wedge nozzle from splashing to the entrance side. . It is preferable that the wedge-shaped nozzle has a structure capable of changing a discharge direction of the processing liquid. With the aforementioned configuration, the processing liquid can be discharged obliquely from the direction of travel of the substrate, and the chemical liquid can be more effectively prevented from scattering to the upstream side. The aforementioned shielding member also serves as a guide plate, which is installed near the ejection port of the treatment liquid in an obliquely intersecting direction with the ejection direction, so that the ejection liquid is deviated from the entrance, in consideration of the effect of preventing splashing. Is satisfactory. The wedge-shaped nozzle is particularly effective if it can be combined with a shower unit. The shower unit uses a plurality of spray nozzles arranged on a substrate in a traveling direction and perpendicular to the traveling direction to supply a treatment liquid to the entire surface of the substrate. The substrate processing device of the invention can be applied to an etching device, and can also be applied to 554391 V. Description of the invention (4) Stripping device. In the etching apparatus, the wedge nozzle is effective for the etching section and the water washing section. In the structure of the peeling device, after the substrate is supplied with a peeling liquid, the surface is washed with water. Between the peeling portion and the water-washing portion to which the peeling liquid is supplied, the replacement portion may be sandwiched or not. The replacement part is a part that temporarily replaces the peeling liquid on the surface of the substrate with a chemical solution that does not cause a problem if a problem occurs when the peeling liquid is mixed with water. The wedge-shaped nozzle of the peeling device is effective for the peeling part and the water washing part, and it is also effective for the replacing part when the replacement part is sandwiched therebetween. Examples of peeling liquids that cause problems when mixed with water include, for example, MEA (ethanolamine) or a mixed liquid of MEA and DMSO (dimethylarsine). Mixing MEA with water can turn into strong alkali, which can damage equipment and so on. In contrast, the water-based stripping solution does not cause problems and does not require replacement. For the two types of stripping solution mentioned above, DMSO is usually used as the replacement solution. For other stripping solutions, IPA (isoprene ethanol) is used. [Embodiment of the invention] The following describes the embodiment of the present invention with reference to the drawings. FIG. 1 is a plan view of a horizontal-conveying substrate processing apparatus according to a first embodiment of the present invention, FIG. 2 is a side view of a main part of the substrate processing apparatus, and FIG. 3 is a longitudinal view of a wedge-shaped nozzle arranged at the main part Sectional view. The horizontal transport type substrate processing apparatus of this embodiment is used for A1 etching processing of a glass substrate 100 (hereinafter referred to as a substrate 100) for a liquid crystal display device. As shown in Fig. 1, the substrate processing apparatus is configured with a straight first line A and a second line B connected perpendicularly to the first line A and 554391. 5. Description of the invention (5) A U-shaped layout of 2 lines B connected vertically and 3 lines C parallel to the 1 line. The first line A is constituted by a linear connection between the receiving portion 10, the liquid discharge portion 20, and the etching portion 30. The second line B is the water washing section 40. The third line C is composed of a transfer device 50, a spin dryer 60, a transfer device 70, and a take-out unit 80 connected linearly. The first line A and the second line B are for conveying the substrate 100 in the longitudinal direction of the line. Therefore, the first line A and the second line B have a plurality of conveying rollers arranged side by side at a certain interval in the conveying direction. Each conveying roller is a horizontal roller perpendicular to the conveying direction. The second line B, that is, the entrance portion of the washing unit 40, is provided with a steering mechanism 41 that changes the traveling direction of the substrate 100 by 90 degrees. The substrate 100 which has been subjected to the A1 etching treatment is conveyed into the receiving section 10 by the conveying device 90. This substrate 100 is transported by a roller from the liquid discharge unit 20 to the etching unit 30, and an etching process is performed when passing. The substrate 100 that has passed through the etching section 30 is then conveyed to the water washing section 40 by a roller, the direction of 90 degrees is changed, the water washing section 40 is moved, and the water washing treatment is performed during the movement. The substrate 100 moved to the exit of the water washing section 40 is transferred from the water washing section 40 to the spin dryer 60 by a transfer device 50. After the spin dryer 60 has finished drying the substrate 100, it is transferred from the spin dryer 60 to the take-out section 80 by the transfer device 70, and then transferred by the transfer device 90 to the outside of the device. The biggest feature of the horizontal transfer type substrate processing apparatus of this embodiment is the etching section 30 and the water washing section 40.
554391 五、發明說明（7) 前端部，具體而言，係以斜向橫切楔形部33d方式，以螺 栓33e固定於前端部之傾斜正面。利用此方式，從楔形部 33d以膜狀噴出之蝕刻液會衝撞屏蔽構件33b，並沿著屏 蔽構件33b之表面而將方向轉向基板100之行進方向。亦 即，屏蔽構件33b兼具爲蝕刻液之導引板。 簇射單元34具有，在基板100上和基板100行進方向 相平行之水平方向、以及和行進方向相垂直之水平方向上 ，以特定間隔之矩陣狀（含交錯狀）配置之多數噴霧嘴34a ，對此基板1 〇表面更廣泛之範圍實施A1用蝕刻液之噴霧 〇 多數噴霧嘴34a並列於和基板100之行進方向相垂直的 方向，且分別沿著基板1 〇〇之行進方向以向下方式裝配置 於複數之集管34b上。各噴霧嘴34a係使A1用蝕刻液成 細液滴狀，並以圓錐狀噴射，在相鄰之噴嘴間，各噴嘴之 噴射範圍互相重疊。此處之蝕刻液供應量，則設定爲可以 在基板100表面上可充份進行藥液置換。 楔形之氣嘴36配置於蝕刻部30之出口部份，在跨越基 板1 〇表面之行進方向部份之整個橫向並以直線狀吹送空 氣，去除該表面之鈾刻液。 水洗部40具有將基板100之行進方向改變90度之轉向 機構41、及配置於其後方之多數輸送滾筒，而其上方，爲 了噴附基板1〇〇表面之洗淨水，而設有楔形噴嘴42及簇 射單元43。 554391 五、發明說明（8) 楔形噴嘴42係配置於水洗部40之入口部位，尤其是和 蝕刻部30連接之連接部附近。此楔形噴嘴42和配置於蝕 刻部30之人口部位的楔形噴嘴33具有相同之構成，在以 膜狀噴出洗淨水之噴嘴本體上裝設屏蔽構件。 簇射單元43係沿著基板100之行進方向採複數配置。 各簇射單元43和設置於蝕刻部30之簇射單元34相同， 係在基板1〇〇行進方向平行之水平方向、及和該行進方向 垂直之水平方向以一定間隔之矩陣狀（含交錯狀）配置之多 數噴霧嘴，並從上方向通過下方之基板1〇〇表面散布洗淨 水。 具有此構成之本實施形態的基板處理裝置中，從排液部 20進入蝕刻部30之基板100，會通過由楔形噴嘴33之噴 嘴本體33a噴出之A1用蝕刻液之液膜中，並從前端部對 其表面上依序供應蝕刻液。其次，從簇射單元34噴出之 A1用蝕刻液中通過，對基板100之表面整體供應A1用蝕 刻液，實施一定之蝕刻。 若直接對基板1 〇〇之乾燥表面簇射A1用蝕刻液，則最 先承受到液滴之部份會出現處理痕跡，但若事前通過蝕刻 液之膜中，則可以在表面不會留下任何痕跡之情形下提供 蝕刻液，可防止蝕刻液之簇射處理所造成的處理痕跡。 此時，楔形噴嘴33之噴嘴本體33a噴出之A1用蝕刻液 ，會強力衝撞基板1〇〇之表面，而發生飛濺，但噴嘴本體 33a上裝設之屏蔽構件33b可防止向上游側之飛濺，且可 -10- 554391 五、發明說明（9) 使蝕刻液之噴出方向轉向基板100之行進方向，蝕刻液會 從斜前方衝撞基板1 〇〇之表面。因此，可有效防止蝕刻液 飛濺至上游側，而防止上游側之設備因蝕刻液而產生腐鈾 。又，亦可避免蝕刻液之損失。 通過簇射單元34之下方的基板100,會通過氣嘴36之 下方，在除去其表面之蝕刻液後，進入水洗部40。進入水 洗部40時，基板100會通過楔形噴嘴42之下方。因爲通 過楔形噴嘴42之下方，表面之藥液會被瞬間置換成洗淨 水，而停止触刻。 楔形噴嘴42之噴嘴本體噴出之洗淨水，會強力衝撞基 板100之表面，但因噴嘴本體裝設著藥液導引片，·可有效 防止其飛濺至蝕刻部3〇。因此，蝕刻部30中，可防止洗 淨水混入蝕刻液內。 通過楔形噴嘴42之下方並進入水洗部40之基板100, 在改變方向後，通過簇射單元43噴出之洗淨水中，接受 特定之洗淨處理。 楔形噴嘴中，對噴嘴本體中心線之屏蔽構件的傾斜角度 Θ1最好爲15〜45度。此傾斜角度太小時，可能無法充份 防止藥液飛濺至入口側。相反的，此傾斜角度太大時，則 可能妨礙對基板表面之藥液供應。 噴嘴本體中心線對基板表面之傾斜角度，對垂直線之上 游側前傾角度Θ2最好爲土 30度以下。此傾斜角度較小時， 則只需較小的設置空間。相反的，此傾斜角度較大時，設 -11- 五、發明說明（1〇) 置空間亦會增加，設備也會擴大。 前述實施形態之基板處理裝置係A1蝕刻裝置，亦可適 用於其他蝕刻裝置，而且，不限於蝕刻裝置，亦可使用於 剝離裝置等。使用於剝離裝置時，若能在剝離部及水洗部 裝設附有屏蔽構件之楔形噴嘴則更有效果，兩者間若有置 換部時，在此置換部設置附有屏蔽構件之楔形噴嘴亦有良 好效果。 在剝離部之入口部份設置此附有屏蔽構件之楔形噴嘴， 可以防止剝離液飛濺至上游側，而防止上游側設備因剝離 液而腐蝕，同時，亦可避免剝離液之損失。在置換部之入 口部份設置此附有屏蔽構件之楔形噴嘴，可以防止置換液 飛濺至上游側之剝離部，在剝離部則可防止置換水混入剝 離液內，置換部亦可避免置換液之無謂消耗。若能在水洗 部之入口部份設置此附有屏蔽構件之楔形噴嘴，可以防止 洗淨水混入剝離部或置換部內，可避免剝離液或置換液之 稀釋損失。 【發明之功效】 如上面所述，本發明之基板處理裝置，利用在處理部之 入口部份設置楔形噴嘴，對基板之整個橫向噴出膜狀處理 液，可以防止藥液處理部之處理痕跡，在藥液處理部之後 的水洗部，則可迅速中止藥液處理。又，在楔形噴嘴上設 置防止楔形噴嘴噴出之處理液飛濺至入口側之屏蔽構件.， 可防止使用楔形噴嘴之液膜處理時的對上游側飛濺，亦解 -12- 554391 五、發明說明（11) 決藥液之設備腐鈾問題、及洗淨水混入藥液而增加藥液成 本之問題等。 【圖式之簡單說明】 第1圖係本發明一實施形態輸送式基板處理裝置之平面 圖。 第2圖係該基板處理裝置之主要部位的側面圖。 第3圖係設於該主要部位之楔形噴嘴的縱剖面圖。 【元件符號之說明】 10 受取部 20 排液部 30 蝕刻部 3 1 輸送滾筒 33 楔形噴嘴 33a 噴嘴本體 33b 屏蔽構件 34 簇射單元 34a 噴霧嘴 34b 集管 36 氣嘴 40 水洗部 41 轉向機構 42 楔形噴嘴 43 簇射單元 -13- 554391 五、發明說明（12) 50、 70 移載裝置 60 白 旋乾燥機 80 取出部 90 輸 送裝置 100 基 板 -14-554391 V. Description of the invention (7) The front end portion, specifically, is obliquely cut across the wedge portion 33d and fixed to the oblique front side of the front end portion with a bolt 33e. In this way, the etchant sprayed from the wedge-shaped portion 33d in a film form collides with the shield member 33b, and turns the direction of the substrate 100 along the surface of the shield member 33b. That is, the shield member 33b also serves as a guide plate for the etchant. The shower unit 34 includes a plurality of spray nozzles 34a arranged on a substrate 100 in a horizontal direction parallel to the traveling direction of the substrate 100 and in a horizontal direction perpendicular to the traveling direction in a matrix (including staggered) pattern, A wide range of the surface of the substrate 100 is sprayed with an etching solution for A1. Most of the spray nozzles 34a are arranged in a direction perpendicular to the traveling direction of the substrate 100, and each is downward along the traveling direction of the substrate 100. The mode assembly is placed on a plurality of headers 34b. Each of the spray nozzles 34a is formed into a droplet shape of the etching solution for A1 and is sprayed in a conical shape. The spraying ranges of the respective nozzles overlap each other between adjacent nozzles. Here, the supply amount of the etching liquid is set so that the liquid chemical can be sufficiently replaced on the surface of the substrate 100. The wedge-shaped gas nozzle 36 is disposed at the exit portion of the etching portion 30, and blows air in a straight line across the entire transverse direction of the direction of travel of the surface of the substrate 10 to remove the uranium etching liquid on the surface. The water washing section 40 includes a steering mechanism 41 that changes the traveling direction of the substrate 100 by 90 degrees, and a plurality of conveying rollers arranged behind it. Above it, a wedge-shaped nozzle is provided to spray the washing water on the substrate 100 surface. 42 和 shower unit 43. 554391 V. Description of the invention (8) The wedge-shaped nozzle 42 is arranged at the entrance of the washing section 40, especially near the connection section connected to the etching section 30. This wedge-shaped nozzle 42 has the same structure as the wedge-shaped nozzle 33 disposed at the population portion of the etching portion 30, and a shield member is mounted on the nozzle body which sprays the washing water in a film form. The shower units 43 are plurally arranged along the traveling direction of the substrate 100. Each shower unit 43 is the same as the shower unit 34 provided in the etching portion 30, and is in a matrix shape (including a staggered pattern) at a certain interval in a horizontal direction parallel to the substrate 100 traveling direction and a horizontal direction perpendicular to the traveling direction. ) Most spray nozzles are arranged, and the washing water is spread from the top surface of the bottom substrate 100 from the upper direction. In the substrate processing apparatus of this embodiment having such a structure, the substrate 100 that enters the etching section 30 from the liquid discharge section 20 passes through the liquid film of the etching solution for A1 ejected from the nozzle body 33 a of the wedge-shaped nozzle 33 and is from the front end. The part sequentially supplies an etchant on its surface. Next, the etching solution for A1 ejected from the shower unit 34 passes through, and the etching solution for A1 is supplied to the entire surface of the substrate 100 to perform a predetermined etching. If the etching solution for A1 is showered directly on the dry surface of the substrate 1000, the processing mark will appear on the part that first receives the droplet, but if it passes through the film of the etching solution beforehand, it can be left on the surface. Providing an etching solution in the case of any trace can prevent the processing trace caused by the shower of the etching solution. At this time, the etching solution for A1 sprayed from the nozzle body 33a of the wedge-shaped nozzle 33 will strongly collide with the surface of the substrate 100, and splash will occur, but the shielding member 33b provided on the nozzle body 33a can prevent splashing to the upstream side. And -10- 554391 V. Description of the invention (9) The spraying direction of the etching solution is changed to the traveling direction of the substrate 100, and the etching solution will collide with the surface of the substrate 100 from the oblique front. Therefore, it can effectively prevent the etching solution from splashing to the upstream side, and prevent the equipment on the upstream side from generating rotten uranium due to the etching solution. In addition, loss of the etching solution can be avoided. The substrate 100 passing below the shower unit 34 passes below the air nozzle 36, and after the etching solution on the surface is removed, it enters the water washing section 40. When entering the water washing section 40, the substrate 100 passes under the wedge-shaped nozzle 42. Because under the wedge-shaped nozzle 42, the chemical liquid on the surface is instantly replaced with washing water, and the engraving is stopped. The washing water sprayed from the nozzle body of the wedge-shaped nozzle 42 will strongly collide with the surface of the substrate 100. However, since the nozzle body is provided with a chemical liquid guide sheet, it can effectively prevent it from splashing into the etching portion 30. Therefore, in the etching portion 30, it is possible to prevent the washing water from being mixed into the etching solution. The substrate 100 passing through the wedge-shaped nozzle 42 and entering the water washing unit 40 is changed in direction, and the washing water sprayed from the shower unit 43 is subjected to a specific washing treatment. In the wedge-shaped nozzle, the inclination angle Θ1 of the shield member with respect to the center line of the nozzle body is preferably 15 to 45 degrees. If the tilt angle is too small, the liquid may not be sufficiently prevented from splashing to the inlet side. Conversely, when the tilt angle is too large, the supply of the chemical solution to the substrate surface may be hindered. The inclination angle of the center line of the nozzle body to the surface of the substrate, and the forward inclination angle Θ2 above the vertical line is preferably less than 30 degrees. When the tilt angle is small, a small setting space is required. Conversely, when this tilt angle is large, the design space will be increased and the equipment will be enlarged. The substrate processing apparatus of the aforementioned embodiment is an A1 etching apparatus, and can be applied to other etching apparatuses. The substrate processing apparatus is not limited to an etching apparatus, and may be used in a peeling apparatus. When used in a peeling device, it is more effective if a wedge-shaped nozzle with a shielding member is installed in the peeling section and the washing section. If there is a replacement section between the two, a wedge-shaped nozzle with a shielding member is also installed in the replacement section. Good results. The wedge-shaped nozzle with a shielding member is provided at the entrance of the peeling part, which can prevent the peeling liquid from splashing to the upstream side, prevent the upstream equipment from being corroded by the peeling liquid, and prevent the loss of the peeling liquid. The wedge-shaped nozzle with a shielding member is installed at the entrance of the replacement part, which can prevent the replacement liquid from splashing to the upstream peeling part. The peeling part can prevent the replacement water from mixing into the peeling liquid. The replacement part can also avoid the replacement liquid. Useless consumption. If the wedge-shaped nozzle with a shielding member can be provided at the entrance of the washing section, the washing water can be prevented from being mixed into the peeling section or the replacement section, and the dilution loss of the peeling solution or the replacement solution can be avoided. [Effects of the invention] As described above, the substrate processing apparatus of the present invention uses a wedge-shaped nozzle provided at the entrance portion of the processing section to spray a film-shaped processing liquid across the entire substrate, which can prevent processing traces of the chemical processing section In the washing section after the chemical solution processing section, the chemical solution processing can be quickly stopped. In addition, a wedge-shaped nozzle is provided with a shielding member that prevents the processing liquid sprayed by the wedge-shaped nozzle from splashing to the inlet side. It can prevent the upstream side from being splashed when the liquid film is processed using the wedge-shaped nozzle. 11) The problem of uranium rot in the liquid medicine equipment and the problem of increasing the cost of the liquid medicine by mixing the washing water with the liquid medicine. [Brief description of the drawings] FIG. 1 is a plan view of a conveyance type substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a side view of a main part of the substrate processing apparatus. Fig. 3 is a longitudinal sectional view of a wedge-shaped nozzle provided at the main portion. [Explanation of component symbols] 10 Receiving section 20 Draining section 30 Etching section 3 1 Conveying roller 33 Wedge nozzle 33a Nozzle body 33b Shield member 34 Shower unit 34a Spray nozzle 34b Header 36 Air nozzle 40 Washing section 41 Steering mechanism 42 Wedge Nozzle 43 shower unit -13- 554391 V. Description of the invention (12) 50, 70 Transfer device 60 White spin dryer 80 Take-out section 90 Transport device 100 Substrate -14-