JP4005462B2 - Transport type substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a transfer substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device , and more particularly to a transfer substrate processing apparatus for etching .
[0002]
[Prior art]
A glass substrate used in a liquid crystal display device is manufactured by repeatedly performing chemical treatments such as etching and peeling on the surface of a glass substrate as a material. The processing apparatus is roughly classified into a dry type and a wet type, and the wet type is further classified into a batch type and a single wafer type. Further, the single wafer type is subdivided into a rotary type and a conveyance type such as roller conveyance.
[0003]
Among these substrate processing apparatuses, the transport type has a basic configuration in which the processing liquid is supplied to the surface of the substrate while transporting the substrate in a substantially horizontal direction. Used for peeling treatment.
[0004]
In the transfer type substrate processing apparatus used for the etching process, by spraying an etchant from a large number of spray nozzles arranged in a matrix above the substrate transfer line and passing the substrate through the shower of the etchant, An etching solution is supplied to the entire surface of the substrate. By this shower process, the surface of the substrate is selectively etched except for the portion where the masking material is applied. When the etching is finished, the cleaning process is continued with a shower. The one for peeling treatment has basically the same configuration.
[0005]
[Problems to be solved by the invention]
By the way, in the glass substrate for liquid crystal display devices, high definition of a circuit is progressing with the enlargement of the substrate. As a wiring material used for the substrate, Cr has been widely used in the past, but with recent high definition, conversion to Al or Al / Mo having a smaller specific resistance value is being attempted. For this reason, the etching solution for Al has begun to be used also in the transporting substrate processing apparatus for etching, but it has been found that the following problems occur with the use of this etching solution.
[0006]
As the etching solution for Al, one having phosphoric acid as a main component is used. When this etching solution is supplied to the surface of the substrate, fine bubbles due to reaction with the metal often occur on the metal film. The bubbles are not removed even by a physical action caused by the shower of the etching solution, and stay on the metal film of the substrate, thereby causing uneven etching.
[0007]
In general, in a shower process using an etchant, the substrate passes through the shower of the etchant, whereby the etchant flows over the surface of the substrate from the front to the back in the transport direction, and liquid replacement is performed. There is no problem when the substrate is small, but when the substrate is enlarged, the etching solution tends to stay in the central portion as compared with both side portions of the substrate. As a result, a difference occurs in the etching rate between the central portion in the width direction and both side portions, which also causes processing unevenness.
[0008]
In order to solve these problems, it is considered that a large number of spray nozzles constituting the shower unit are swung in synchronization with both sides in the plate width direction of the substrate (Japanese Patent Application No. 2000-376830). By swinging the spray nozzle, the processing liquid supplied to the surface of the substrate can be alternately flowed to both sides on the surface. That is, in normal spraying, the processing liquid supplied on the surface of the substrate is not only forcedly discharged backward in the transport direction, but is only naturally discharged to both sides due to overflow. By swinging in synchronization with both sides, a liquid flow from one side of the substrate to the other side and a liquid flow from the other side to the one side are alternately and forcibly formed. As a result, bubbles generated on the surface of the substrate along with the supply of the processing liquid are efficiently removed, and the processing rate in the plate width direction is equalized.
[0009]
However, in this technique, it is necessary to make the spray nozzle movable and provide a drive mechanism in order to swing the spray nozzle. As a result, the structure of the apparatus is remarkably complicated, resulting in problems of an increase in apparatus cost and a decrease in reliability.
[0010]
The object of the present invention is to efficiently remove bubbles generated on the surface of the substrate as the processing liquid is supplied to the substrate surface and to eliminate the uneven processing rate in the width direction, which is a problem with large substrates. In addition, it is an object of the present invention to provide a transfer type substrate processing apparatus having a simple apparatus structure and excellent in economic efficiency and reliability.
[0011]
[Means for Solving the Problems]
In order to achieve the above-mentioned object, the transportable substrate processing apparatus of the present invention is an etching transportable substrate processing apparatus for supplying an etching solution as a processing liquid to the surface of the substrate while transporting the substrate in a substantially horizontal direction. The processing liquid is sprayed on the surface of the substrate from a plurality of spray nozzles arranged in tandem in the substrate transport direction and arranged in a direction perpendicular to the substrate transport direction and the transport direction. 4 or more shower units inclined in directions different from each other in the plate width direction are provided, and the arrangement pitch P of the 4 or more shower units is set to (1/4 to 2) L, where L is the total length of the substrate. Is .
[0012]
In the transport type substrate processing apparatus of the present invention, a slit nozzle that supplies the processing liquid in a film shape over the entire width may be provided on a part of the substrate in the traveling direction further upstream of the most upstream shower unit.
[0013]
By arranging four or more shower units in which the treatment liquid spraying direction is alternately inclined in different directions in the plate width direction in the substrate transport direction, the surface of the substrate that passes under the four or more shower units sequentially As if the spray nozzle is swung to both sides in the plate width direction, the liquid flow from one side of the substrate to the other side and the liquid flow from the other side to the one side are alternately performed twice or more. Forced formation. As a result, air bubbles generated on the surface of the substrate are efficiently removed despite the use of a fixed spray nozzle, and the processing rate in the width direction is equalized. In addition, since the spray nozzle is fixed, an increase in equipment cost and a decrease in reliability, which are problems in swinging, are avoided.
[0014]
On the further upstream side of the most upstream shower unit, a slit nozzle that supplies a processing liquid in a film shape over the entire width in a part of the traveling direction of the substrate is provided, and by passing the substrate through the film before the shower process, The surface gets wet evenly. Once it gets wet evenly, even if it is subjected to a shower process after that, there will be no process unevenness due to droplets.
[0015]
The transport type substrate processing apparatus of the present invention is particularly suitable for Al etching, but it is also effective for other etching processes such as Mo etching, although there are differences in the degree of effectiveness .
[0016]
The inclination angle of the spray nozzle in the shower unit is preferably 15 to 45 degrees. If this inclination angle is too small, a liquid flow in the plate width direction is not sufficiently formed. If it is too large, the diffusion of the treatment liquid becomes remarkable, and the liquid flow in the plate width direction is not sufficiently formed. Qualitatively, it is appropriate to incline to such an extent that the processing liquid existing immediately below the spray nozzle adjacent in the plate width direction can be removed, although it depends on the nozzle interval in the plate width direction. , Around 30 degrees is optimal.
[0017]
The arrangement pitch P of the plurality of shower units was set to (1/4 to 2) L , where L is the total length of the substrate. If the pitch is too small, the spraying direction of the processing liquid is frequently switched, and interference of the reverse liquid flow becomes obvious on the surface of the substrate, making it difficult to form a smooth alternating flow. Conversely, when it is too large, the switching of the liquid flow becomes slow, and the effect of removing bubbles and the effect of equalizing the processing rate are reduced. A particularly preferable arrangement pitch P is around 1 / 2L. In addition, when the frequency of switching the spraying direction is expressed by time, it is appropriate once every 3 to 15 seconds.
[0018]
The amount of the processing liquid sprayed from the spray nozzle may be basically the same as that when the spray nozzle is directed directly below, and is appropriately selected based on the type of processing, specifications desired by the user, and the like.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. 1 is a plan view of a transfer type substrate processing apparatus showing an embodiment of the present invention, FIG. 2 is a view taken along line AA in FIG. 1, and FIG. 3 is a view taken along line B-B in FIG. is there.
[0020]
The transport type substrate processing apparatus of this embodiment is an apparatus that performs Al etching processing on a glass substrate for a liquid crystal display device. As shown in FIG. 1, the substrate processing apparatus for etching is connected to a straight first line A, a second line B connected to the first line A at a right angle, and a second line B to a right angle. A U-turn layout that combines the third line C parallel to the first line A is employed.
[0021]
The first line A is configured by linearly connecting the substrate receiving unit 10, the liquid avoiding unit 20, and the etching unit 30. The etching unit 30 includes a first slit nozzle 31 for a liquid curtain that supplies an etching solution in a film shape to an inlet, a plurality of shower units 32L, 32R,. Further, a second slit nozzle 33 for draining the liquid is provided at the downstream outlet.
[0022]
The second line B is a water washing unit 40 equipped with a plurality of shower units 41 for spraying washing water on the surface of the substrate 100. At the entrance and exit of the second line B, right-angle transfer devices 42 and 43 that change the transport direction of the substrate 100 by 90 degrees are provided. The third line C is configured by linearly connecting the water washing unit 50, the final rinse unit 60, the drying unit 70, and the substrate take-out unit 80. The water washing section 50 and the final rinse section 60 are equipped with shower units 51 and 61 for spraying washing water on the surface of the substrate 100, respectively. The drying unit 70 is equipped with an inclined slit nozzle 71 for draining liquid.
[0023]
The first line A, the second line B, and the third line C are provided with a number of transport rollers, which will be described later, as the substrate transport mechanism, except for the portions of the right-angle transfer devices 42 and 43.
[0024]
The substrate 100 subjected to the etching process is carried into the substrate receiving unit 10 by the robot hand 90A. The substrate 100 is conveyed by the roller conveyance from the substrate receiving unit 10 through the liquid repellent unit 20 to the etching unit 30 and is subjected to an etching process while passing through the etching unit 30.
[0025]
The substrate 100 that has passed through the etching unit 30 subsequently enters the washing unit 40 by roller conveyance, changes the traveling direction by 90 degrees, moves the washing unit 40, and further changes the traveling direction by 90 degrees to another washing unit. 50 is entered, and in the meantime, the water washing process is received. The substrate 100 exiting the water washing unit 50 is conveyed to the drying unit 70 through the final rinse unit 60 by roller conveyance.
[0026]
The substrate 100 which has been dried by the drying unit 70 is subsequently carried out to the substrate take-out unit 80 by roller conveyance, and is carried out of the apparatus by the robot hand 90B.
[0027]
In the transfer type substrate processing apparatus of the present embodiment, the etching unit 30 has a particularly great feature point. As shown in FIGS. 2 and 3, the etching unit 30 includes a transport roller 34 that transports the substrate 100 in the horizontal direction, and two types of shower units 32 </ b> L and 32 </ b> R above the transport line of the substrate 100. ing.
[0028]
A large number of transport rollers 34 are arranged at predetermined intervals in the substrate transport direction, and are synchronously driven by a drive mechanism 36. Each transport roller 34 includes a drive shaft 34a and a plurality of roller bodies 34b that are attached to the drive shaft 34a at predetermined intervals and support the substrate 100 at a plurality of locations in the plate width direction. A roller with a flange having a positioning function for both edge portions of the substrate 100. Then, the conveying roller 34 and the pressing roller 35 are combined at a ratio of one to a predetermined number to constitute a double roller.
[0029]
The pressing roller 35 constituting the double roller is a pair of roller bodies attached to the driving shaft 35a so as to correspond to the driving shaft 35a driven in synchronization with the lower conveying roller 34 and the flanged rollers on both sides. 35b. The double rollers are arranged at a pitch smaller than the length L of the substrate 100 in order to prevent the substrate 100 from slipping.
[0030]
The two types of shower units 32 </ b > L and 32 </ b > R are alternately arranged in four or more columns in the conveyance direction of the substrate 100. Each of the shower units 32L and 32R includes a plurality of header tubes 32a and a plurality of spray nozzles 32b attached to each header tube 32a. The plurality of header tubes 32 a are horizontal tubes extending in the transport direction of the substrate 100, and are arranged at a predetermined interval in a direction perpendicular to the transport direction of the substrate 100. The plurality of spray nozzles 32b are attached at a predetermined interval in the longitudinal direction of the header tube 32, and thereby, at a predetermined interval in a horizontal direction parallel to the transport direction of the substrate 100 and a horizontal direction perpendicular to the transport direction. A group of nozzles arranged in a matrix (including a staggered pattern) is configured above the transport line of the substrate 100.
[0031]
An etching solution is supplied to the plurality of header tubes 32a from a mother tube (not shown). As a result, the etching solution is sprayed from a large number of spray nozzles 32b, and the etching solution is supplied to the entire surface of the substrate 100 passing under the shower units 32L and 32R. The multiple spray nozzles 32b are arranged so that the etching liquid is made into fine droplets and sprayed in a conical shape, and the spraying ranges of the nozzles overlap between adjacent nozzles.
[0032]
A particularly important configuration in the etching unit 30 is that the direction of the spray nozzle 32b is different between the shower unit 32L and the shower unit 32R. More specifically, in the shower unit 32L, as shown in FIG. 2, the large number of spray nozzles 32b are arranged in one of the horizontal direction (plate width direction) perpendicular to the conveyance direction of the substrate 100 with respect to the direction directly below. It is inclined at a predetermined angle θ on the side (left side in the drawing direction in the figure). On the other hand, in the shower unit 32R, as shown in FIG. 3, the large number of spray nozzles 32b are on the other side in the horizontal direction (plate width direction) perpendicular to the conveyance direction of the substrate 100 with respect to the direction directly below ( In the figure, it is inclined at a predetermined angle θ on the right side in the transport direction. Here, the inclination angle θ of each spray nozzle 32b with respect to the vertical line is about 30 degrees in both units.
[0033]
A first slit nozzle 31 for liquid curtain and a second slit nozzle 33 for liquid removal are respectively provided at the inlet and outlet of the etching unit 30. The first slit nozzle 31 is a horizontal nozzle that is perpendicular to the traveling direction of the substrate 100, and flows the etching solution into a part of the traveling direction of the surface of the substrate 10 by flowing the Al etching solution in a film shape. Supply in a straight line over. The second slit nozzle 33 is a slit-type air nozzle, and removes the etching solution from the surface of the substrate 10 by blowing air linearly over the entire width of a part of the surface of the substrate 10 in the traveling direction.
[0034]
In the transport-type substrate processing apparatus of the present embodiment having such a configuration, the substrate 100 that has entered the etching unit 30 from the liquid repellent unit 20 is first an Al etching solution formed below the first slit nozzle 31. The liquid is passed through the liquid curtain, and the etching liquid is sequentially supplied onto the surface from the tip.
[0035]
When the etching solution for Al is suddenly showered on the surface of the substrate 100, the portion that first received the droplet remains as a processing unevenness, but the etching solution is formed on the surface by passing through the etching solution film in advance. Is supplied without unevenness, so that unevenness in processing accompanying the shower process of the etching solution is prevented.
[0036]
Next, the substrate 100 alternately passes below the two types of shower units 32L and 32R, and when passing below the shower unit 32L, an etching solution is obliquely scattered on the surface of the substrate 100 from one side, and the unit When passing below 32R, the etching solution is sprayed obliquely on the surface of the substrate 100 from the other side. Thereby, on the surface of the substrate 100, the liquid flow from one side to the other side and the liquid flow from the other side to the one side are alternately forced as if the spray nozzle 32b was swung. Formed.
[0037]
The Al layer or the Al / Mo layer formed on the surface of the substrate 100 is selectively etched by a shower process using an etching solution for Al. In this shower process, a large number of fine bubbles may be generated on the metal film of the substrate 100, but as described above, the liquid flow from one side to the other side and the other side on the surface of the substrate 100. By alternately and forcibly forming a liquid flow from one part to one side, bubbles generated on the surface of the substrate 100 are efficiently eliminated to both sides of the substrate 100 together with the etching liquid. Therefore, processing unevenness due to bubbles is prevented. Furthermore, the processing rate in the width direction of the substrate 100 is equalized, and from this point, processing unevenness can be eliminated.
[0038]
In addition, although the said embodiment is Al etching apparatus, it is applicable also to other etching apparatuses, such as Mo etching, Furthermore, it is applicable also to a peeling apparatus and a washing | cleaning apparatus.
[0039]
【The invention's effect】
As described above, the transport type substrate processing apparatus according to the present invention includes four or more shower units in which the spraying direction of the etching solution from the spray nozzle is alternately inclined in different directions in the plate width direction in the substrate transport direction. By arranging, as in the case where the spray nozzle is swung in the plate width direction, bubbles generated on the surface of the substrate due to the supply of the processing liquid to the surface can be efficiently removed, and a large substrate can be used. Uneven processing rate in the width direction, which is a problem, can be eliminated, and thereby processing unevenness can be effectively prevented. In addition, it is possible to fix the spray nozzle and to avoid the complication of the device structure which becomes a problem when the spray nozzle is swung, and the increase in device cost and the decrease in reliability due to this.
[0040]
Further, on the further upstream side of the most upstream shower unit, a slit nozzle that supplies a processing liquid in a film shape to the entire width direction of the substrate surface is provided, and by passing the substrate through the film before the shower process, Processing unevenness can be effectively and effectively prevented.
[Brief description of the drawings]
FIG. 1 is a plan view of a transport type substrate processing apparatus showing an embodiment of the present invention.
FIG. 2 is a view taken along the line AA in FIG.
FIG. 3 is a view taken along line BB in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Receiving part 20 Liquid prevention part 30 Etching part 31 1st slit nozzle 32L, 32R Shower unit 32a Header pipe 32b Spray nozzle 33 2nd slit nozzle 34 Conveyance roller 35 Pressing roller 40, 50 Washing part 60 Final rinse part 70 Drying part 80 Extraction part 90A, 90B Robot hand 100 Substrate

Claims (4)

An etching transfer substrate processing apparatus that supplies an etching solution as a processing solution to a surface of a substrate while transferring the substrate in a substantially horizontal direction, and is arranged in tandem in the substrate transfer direction. Four or more showers in which the processing liquid is sprayed on the surface of the substrate from a large number of spray nozzles arranged in a direction perpendicular to the conveying direction, and the spraying direction of each processing liquid is alternately inclined in the plate width direction. A transport type substrate processing apparatus comprising: a unit, wherein an arrangement pitch P of four or more shower units is set to (1/4 to 2) L, where L is a total length of the substrate.   2. The transport type substrate processing apparatus according to claim 1, further comprising a slit nozzle that supplies a processing liquid in a film shape over a part of the transport direction of the substrate on a further upstream side of the uppermost shower unit. .   The transport type substrate processing apparatus according to claim 1, wherein the processing liquid is an etching solution for Al.   The conveyance type substrate processing apparatus according to claim 1, wherein an inclination angle θ of the spray nozzle in each shower unit is 15 to 45 degrees.

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