WO2002073672A1 - Substrate treating device - Google Patents

Substrate treating device Download PDF

Info

Publication number
WO2002073672A1
WO2002073672A1 PCT/JP2002/002223 JP0202223W WO02073672A1 WO 2002073672 A1 WO2002073672 A1 WO 2002073672A1 JP 0202223 W JP0202223 W JP 0202223W WO 02073672 A1 WO02073672 A1 WO 02073672A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
air knife
gas
wet
liquid
Prior art date
Application number
PCT/JP2002/002223
Other languages
French (fr)
Japanese (ja)
Inventor
Shigeru Mizukawa
Katsutoshi Nakata
Shunji Matsumoto
Original Assignee
Sumitomo Precision Products Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co., Ltd. filed Critical Sumitomo Precision Products Co., Ltd.
Priority to JP2002572623A priority Critical patent/JPWO2002073672A1/en
Publication of WO2002073672A1 publication Critical patent/WO2002073672A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/022Cleaning travelling work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023Cleaning travelling work
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B15/00Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form
    • F26B15/10Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions
    • F26B15/12Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions the lines being all horizontal or slightly inclined
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00Drying solid materials or objects by processes not involving the application of heat
    • F26B5/14Drying solid materials or objects by processes not involving the application of heat by applying pressure, e.g. wringing; by brushing; by wiping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Definitions

  • the present invention relates to a substrate processing apparatus for sequentially performing wet and dry processes on a substrate while transporting the substrate by a transport unit, and particularly to a substrate processing apparatus excellent in uniformity of substrate drying.
  • a cleaning device is used to wash the substrate surface by pouring a processing liquid such as pure water onto the surface of the substrate, and then a drying gas is blown onto the substrate surface in the drying device. The processing liquid attached to the substrate surface is removed.
  • Such a cleaning device and a drying device are integrally connected via a transfer means to constitute a substrate processing device.
  • a substrate is provided between the cleaning device and the drying device. It is partitioned by walls with openings for carrying in and out.
  • the surface of the substrate after being cleaned by the cleaning device is removed from the surface by the spontaneous flow of the cleaning liquid supplied onto the surface, and a state in which the pool of the cleaning liquid is scattered in an island shape. If the substrate is dried using a drying gas while the liquid pools are scattered in islands, the island-shaped liquid pools are stained when they are removed and dried. It will be lost.
  • the present invention has been made in view of the above problems, and it is possible to remove a processing solution from a substrate surface and dry the same so that no stain is generated on the substrate surface, and furthermore, it is possible to reduce the size of the apparatus.
  • the purpose is to provide a simple substrate processing apparatus. Disclosure of the invention
  • the present invention provides a transfer unit that transfers a substrate substantially horizontally, a wet processing unit that performs wet processing on a substrate transferred by the transfer unit, and a wet processing unit that is disposed downstream of the wet processing unit in a transfer direction.
  • a film liquid supply means for supplying a film liquid in which a processing liquid is formed in a film shape (curtain shape) onto the substrate; and a slit-shaped opening, and the opening faces the entire width of the substrate.
  • a gas ejecting means provided on the downstream side in the transport direction of the membrane liquid supply means and ejecting gas from the opening to generate a plate-like air flow.
  • the processing liquid formed in a film shape by the film liquid supply unit is supplied onto the substrate discharged from the wet processing unit.
  • the processing liquid having a uniform film thickness in the transport direction and the direction perpendicular thereto is applied to the substrate without unevenness, that is, without generating an island-like liquid pool.
  • the processing liquid applied on the substrate in this way then reaches the plate-like jetted from the gas jetting means when it reaches immediately below the gas jetting means provided on the downstream side in the transport direction of the film liquid supply means.
  • the substrate is removed from the substrate by the air current, that is, the liquid is drained, and the substrate is dried.
  • the liquid is drained in a state in which the processing liquid having a uniform film thickness is applied on the substrate, that is, in a state where no island-like liquid pool is generated on the substrate. Therefore, it is possible to fundamentally prevent the occurrence of stains at the time of draining, which has been a problem in the past.
  • the film liquid supply means is provided on the upstream side in the transport direction from the gas ejection means, the mist generated in the wet processing section can be completely blocked by the film liquid. Therefore, it is possible to effectively prevent mist from adhering to the substrate surface after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. For this reason, it is not necessary to increase the distance between the wet processing section and the gas ejection means, and the apparatus can be downsized.
  • the gas ejecting means is disposed such that the longitudinal direction of the opening is inclined with respect to a direction orthogonal to the transport direction. According to this configuration, the processing liquid can be flushed toward the side of the substrate by the airflow ejected from the gas ejection means, and can be smoothly removed from the substrate.
  • the gas jetting means may be similarly provided below the substrate.
  • the distance between the opening of the gas ejection means and the substrate is It is preferable that the thickness be 1 mm or more and 5 mm or less. If the distance between the opening and the substrate is less than 1 mm, the opening may be in contact with the processing liquid applied on the substrate, while if it exceeds 5 mm, the drying effect is reduced.
  • a plurality of the gas ejection means may be arranged in parallel along the transport direction. By doing so, the drying effect of the substrate can be further enhanced.
  • FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a main part of a preferred substrate processing apparatus according to the present invention
  • FIG. 2 is a plan view of FIG. 1
  • FIG. FIG. FIG. 4 is a cross-sectional view of the first upper air knife shown in FIG. 1
  • FIG. 5 is a plan view in the direction of arrow V in FIG. 4
  • FIG. FIG. 6 is a front view in the direction of arrow VI in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • a substrate processing apparatus includes a transfer unit 1 for horizontally transferring a substrate W in a direction indicated by an arrow 10; Wet processing unit WET that performs dry processing, dry processing unit DRY that performs dry processing, and membrane liquid supply means 4 disposed between the wet processing unit WET and dry processing unit DRY, the first upper air knife 6, the first It comprises a lower air knife 7, a second upper air knife 8, a second lower air knife 9, etc.
  • the dry processing section DRY is housed in a cover body consisting of two side walls 15 and 15, a bottom plate 17 and an upper plate 17.
  • the membrane liquid supply means 4 is arranged on the upstream side in the carrying direction of the air fin (in this example, the first upper air knife 6 and the first lower air knife 7).
  • the transporting means 1 includes a large-diameter transport roller R and an auxiliary roller f. As shown in FIG. 2, a plurality of transport rollers R are provided at appropriate intervals on a shaft 11 laid horizontally between the side walls 15, 15. Are rotatably supported by bearings. One end of the shaft 11 protrudes outside from one of the side walls 15 and is connected to a roller driving device 12 provided outside the side wall 15. Thus, the transport roller R is driven by the roller drive device 12 to transport the substrate W in the direction indicated by the arrow 10.
  • a plurality of auxiliary rollers r are provided at short intervals in the vicinity of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 along the transport direction of the substrate W.
  • the supporting plates 21, 23, 25 are rotatably supported by supporting members 22, 24, 26, respectively. By arranging a large number of auxiliary rollers r in this manner, the distortion and deflection of the substrate W are prevented, the flatness of the substrate W is made high, and the film liquid supply means 4 places the substrate W on the substrate W It is possible to prevent the supplied processing liquid layer from becoming uneven.
  • the support plates 21, 23, 25 are fixed to the side walls 15, 15 as appropriate.
  • the wet processing section WET is provided with a processing / supplying means (not shown) for supplying a processing liquid to the upper and / or lower surfaces of the substrate W.
  • the processing liquid supply means includes a pipe (not shown) provided above or below the substrate W, and a plurality of pipes connected to the pipe (not shown). Equipped with one nozzle (not shown) to supply processing liquid as needed Connected to a power source (not shown).
  • the shower nozzle (not shown) is arranged such that each spray area covers the entire area in the width direction of the substrate W as a whole.
  • a liquid collecting part is formed on the bottom plate 16, and a drain pipe is connected to the liquid collecting part, and the processing liquid collected in the liquid collecting part is discharged to the outside through the drain pipe. It is being discharged.
  • the film liquid supply means 4 is configured so that the processing liquid supplied from the liquid supply source 40 is formed into a film (force) and flows down over the entire width of the substrate W. Have been.
  • a processing liquid jetting means 5 for jetting a processing liquid toward the lower surface of the substrate W is provided.
  • the processing liquid supplied from the film liquid supply means 4 and the liquid jetting means 5 is usually pure water, but not limited thereto, and various types of processing liquids can be applied.
  • the first upper air knife 6 and the first lower air knife 7 are vertically arranged side by side so as to face each other across the substrate W.
  • the second upper air knife 8 and the second lower air knife 9 also The dry gas is blown out from each of the outlets 61 to generate a plate-like air flow, and the processing liquid attached to the upper and lower surfaces of the substrate W is removed.
  • the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 have respective longitudinal directions L in a direction perpendicular to the substrate W transfer direction, that is, the width of the substrate W.
  • the air outlets 61 are arranged so as to be inclined with respect to the direction H, and are configured to face each other over the entire width of the substrate W.
  • first upper air knife 6 the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9
  • first upper air knife 6 and the first lower air knife 6 7 The first upper air knife 6 and the first lower air knife 6 7.
  • the second upper air knife 8 and the second lower air knife 9 have the same configuration. Therefore, the configuration of the first upper air knife 6 will be described below as a representative.
  • the first upper air knife 6 is configured such that a front plate 63 is fastened to a long main body 64 with screws 65, and between the front plate 63 and the main body 64.
  • the width M of the wide slit 66 formed is adjustable.
  • the opening of the slit 66 serves as the outlet 61.
  • a gas chamber 67 and a gas supply path 68 are formed in the main body 64, and the gas supply path 68 is connected to a gas supply source 60.
  • a flow rate adjusting mechanism, an air filter, and the like are interposed between the gas supply path 68 and the gas supply source 60.
  • the slit 66, the gas chamber 67, and the gas supply path 68 are connected in series in the longitudinal direction L with a block B composed of a set of these.
  • the gas is supplied from the gas supply source 60 to each of the gas supply passages 68.
  • each slit 66 and the gas chamber 67 are formed along the longitudinal direction L, and each slit 66 communicates with an adjacent slit 66 mutually.
  • the gas supply passage 68 is formed substantially linearly from above in the approximate center of the block B toward the gas chamber 67. In this way, by adopting a configuration in which the blocks B are connected, it is possible to easily cope with a wide and long substrate W. As shown in FIG.
  • the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9, each having the above-described configuration, are respectively arranged with respect to the normal direction of the substrate W. Therefore, it is fixed in a state of being inclined at an angle of 0 1 toward the downstream side in the transport direction. As described above, the treatment liquid attached to the substrate W is blown off toward the upstream side in the transport direction by the inclination.
  • the first upper air knife 6 and the second upper air knife 8 For convenience of explanation, the scale plate 62 for angle adjustment is not shown, but the first upper air knife 6 and the second upper air knife 8 are the same as the first lower air knife and the second lower air knife 9.
  • the scale plate for angle adjustment 62 is provided, and the first upper air knife 6, the first lower air knife 7, the second upper air knife 8 and the second lower air knife 9 are each a scale plate for angle adjustment 6 2 By using the above, the angle adjustment of the inclination angle 01 can be performed.
  • both ends of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 are respectively attached to the columns so as to be movable in the vertical direction. The distance between and can be adjusted.
  • the distance between the outlet 61 of the first upper air knife 6 and the outlet 61 of the second air knife 8 and the substrate W is preferably in the range of 1 mm or more and 5 mm or less. If the distance between the outlet 61 and the substrate W is less than 1 mm, the outlet 61 may come into contact with the processing liquid applied on the substrate W, and if it exceeds 5 mm, the drying effect is reduced. . Further, it is preferable that the inclination angle 01 is 15 degrees or more and 60 degrees or less from the viewpoint that a stable boundary surface having no unevenness and no scattering of liquid can be formed.
  • an exhaust mechanism is appropriately connected to the chamber surrounded by the side walls 15 and 15, the bottom plate 17 and the upper plate 17, and the gas in the chamber is removed by the exhaust mechanism. It has become exhausted.
  • the film is formed from the film liquid supply means 4 on the substrate W transferred by the transfer means 1 and discharged from the wet processing unit WET.
  • the supplied processing liquid is supplied.
  • the processing liquid having a uniform film thickness in the transport direction and the direction orthogonal thereto is applied to the substrate W without unevenness, that is, without generating an island-shaped liquid reservoir.
  • the processing liquid is sprayed onto the lower surface of the substrate W from the processing liquid ejecting means 5, and the lower surface is cleaned.
  • the liquid is drained in a state where the processing liquid having a uniform film thickness is applied on the substrate W, that is, in a state where no island-like liquid pool is generated on the substrate.
  • the processing liquid having a uniform film thickness is applied on the substrate W, that is, in a state where no island-like liquid pool is generated on the substrate.
  • the film liquid supply means 4 is provided upstream of the first upper air knife 6 in the re-transport direction, mist generated in the wet processing section can be completely shut off by the film liquid. Accordingly, it is possible to effectively prevent mist from adhering to the surface of the substrate W after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. Therefore, it is not necessary to increase the distance between the wet processing section W ET and the first upper air knife 6, and the apparatus can be downsized.
  • the processing liquid can be flushed toward the side of the substrate W, and can be smoothly removed from the substrate W.
  • the substrate processing apparatus can be suitably used in a process for manufacturing a glass substrate such as a liquid crystal display and a photomask, and a substrate such as a printed wiring board and a semiconductor wafer.

Abstract

A substrate treating device capable of applying wet and dry treatments to a substrate in order while transferring the substrate by a transfer means, comprising a transfer mechanism (1) for transferring the substrate (W), a wet treatment part (WET) for applying the wet treatment to the transferred substrate (W), a membrane liquid feeding mechanism (4) disposed on the downstream side of the wet treatment part (WET) in transfer direction and feeding treatment liquid formed in membrane shape onto the substrate (W), and a gas jetting mechanism (6) having a slit-shaped opening part, disposed on the downstream side of the membrane liquid feeding mechanism (4) in transfer direction so that the opening part can face the substrate (W) through the entire width thereof, and causing a platy draft by jetting gas from the opening part.

Description

明 細 書 基板処理装置 技術分野 ,  Description Substrate processing equipment Technical field,
この発明は、 搬送手段によって基板を搬送しながら、 基板に湿式およ び乾式の処理を順次施す基板処理装置に関し、 とくに、 基板乾燥の均一 性に優れた基板処理装置に関する。 背景技術  The present invention relates to a substrate processing apparatus for sequentially performing wet and dry processes on a substrate while transporting the substrate by a transport unit, and particularly to a substrate processing apparatus excellent in uniformity of substrate drying. Background art
従来より、 液晶表示器、 フォ トマスク等のガラス基板や、 プリン ト配 線基板、 半導体ウェハ等の基板を製造する工程では、 基板表面に各種処 理液を供給し該処理液によって基板表面を処理した後、 これを基板表面 から除去するといつた処理が行われている。  Conventionally, in the process of manufacturing glass substrates such as liquid crystal displays and photomasks, and substrates such as printed wiring boards and semiconductor wafers, various treatment liquids are supplied to the substrate surface and the substrate surface is treated with the treatment liquid. After that, it is removed from the substrate surface.
たとえば、 基板の洗浄を行なう工程では、 洗浄装置を用い、 純水等の 処理液を基板の表面に浴びせかけてこれを洗浄した後、 乾燥装置内で、 乾燥用の気体を基板表面に吹きつけ、 当該基板表面に付着した処理液を 除去している。  For example, in the step of cleaning the substrate, a cleaning device is used to wash the substrate surface by pouring a processing liquid such as pure water onto the surface of the substrate, and then a drying gas is blown onto the substrate surface in the drying device. The processing liquid attached to the substrate surface is removed.
このような洗浄装置およぴ乾燥装置は、 これらが搬送手段を介し一体 的に連結されて、 基板処理装置と して構成されており、 通常、 洗浄装置 と乾燥装置との間は、 基板を搬入, 搬出するための開口部を備えた壁に よって仕切られている。  Such a cleaning device and a drying device are integrally connected via a transfer means to constitute a substrate processing device. Usually, a substrate is provided between the cleaning device and the drying device. It is partitioned by walls with openings for carrying in and out.
ところが、 前記洗浄装置内では、 スプレーノズルから霧状の洗浄液が 基板に対し噴霧されるようになっているため、 噴霧された洗浄液のミス 卜が前記開口部を通して乾燥装置内に侵入し易く、 このため、 乾燥装置 内に侵入したミス トが基板に付着して、 基板表面に点状の染みを生じ易 い。 However, in the cleaning device, since a mist-like cleaning solution is sprayed onto the substrate from a spray nozzle, a mist of the sprayed cleaning solution easily enters the drying device through the opening. As a result, the mist that has entered the drying unit easily adheres to the substrate, causing spot-like spots on the substrate surface. No.
そこで、 従来、 洗浄装置と乾燥装置との間に一定の間隔をあけてこれ らを設置し、 ミス 卜が乾燥装置内に侵入するのを防止している。  Therefore, conventionally, these are installed at a fixed interval between the cleaning device and the drying device to prevent the mist from entering the drying device.
しかしながら、 このように構成された上記従来の基板処理装置におい ても、 依然と して以下に説明するような問題があった。  However, the above-described conventional substrate processing apparatus configured as described above still has a problem as described below.
即ち、 前記洗浄装置によって洗浄された後の基板表面は、 当該表面上 に供給された洗浄液が自然流下して表面上から除去され、 洗浄液の液溜 りが島状に点在した状態となる。 そして、 このように液溜りが島状に点 在した状態のまま乾燥用気体を用いて基板を乾燥させると、 島状の液溜 りが除去, 乾燥される際に同部に染みを生じてしまうのである。  That is, the surface of the substrate after being cleaned by the cleaning device is removed from the surface by the spontaneous flow of the cleaning liquid supplied onto the surface, and a state in which the pool of the cleaning liquid is scattered in an island shape. If the substrate is dried using a drying gas while the liquid pools are scattered in islands, the island-shaped liquid pools are stained when they are removed and dried. It will be lost.
特に、 近年では基板が大型化しており、 かかる大型の基板では、 上述 した島状の液溜りを生じ易く、 問題である。  In particular, in recent years, the size of the substrate has been increased, and such a large-sized substrate is liable to cause the above-mentioned island-shaped liquid pool, which is a problem.
本発明は、 以上の問題に鑑みなされたものであり、 基板表面に染みが 生じないように、 当該基板表面から処理液を除去してこれを乾燥させる ことができ、 しかも装置の小型化が可能な基板処理装置の提供を目的と する。 発明の開示  The present invention has been made in view of the above problems, and it is possible to remove a processing solution from a substrate surface and dry the same so that no stain is generated on the substrate surface, and furthermore, it is possible to reduce the size of the apparatus. The purpose is to provide a simple substrate processing apparatus. Disclosure of the invention
本発明は、 基板を略水平に搬送する搬送手段と、 前記搬送手段によつ て搬送される基板に対し湿式の処理を施す湿式処理部と、 前記湿式処理 部よリ搬送方向下流側に配設され、 処理液を膜状 (カーテン状) に形成 した膜液を前記基板上に供給する膜液供給手段と、 スリッ ト状の開口部 を具備し、 該開口部が前記基板の全幅にわたって対峙するように、 前記 膜液供給手段の前記搬送方向下流側に配設され、 前記開口部から気体を 噴出させて板状の気流を生じさせる気体噴出手段とを設けて構成したこ とを特徵とする基板処理装置に係る。 本発明に係る上記基板処理装置によれば、 まず、 湿式処理部から排出 された基板上に、 膜液供給手段によって膜状に形成された処理液が供給 される。 これにより、 前記搬送方向及びこれと直交する方向に均質な膜 厚の処理液がムラなく、 即ち、 島状の液溜りを生じることなく基板上に 塗布される。 The present invention provides a transfer unit that transfers a substrate substantially horizontally, a wet processing unit that performs wet processing on a substrate transferred by the transfer unit, and a wet processing unit that is disposed downstream of the wet processing unit in a transfer direction. A film liquid supply means for supplying a film liquid in which a processing liquid is formed in a film shape (curtain shape) onto the substrate; and a slit-shaped opening, and the opening faces the entire width of the substrate. And a gas ejecting means provided on the downstream side in the transport direction of the membrane liquid supply means and ejecting gas from the opening to generate a plate-like air flow. To a substrate processing apparatus. According to the substrate processing apparatus of the present invention, first, the processing liquid formed in a film shape by the film liquid supply unit is supplied onto the substrate discharged from the wet processing unit. As a result, the processing liquid having a uniform film thickness in the transport direction and the direction perpendicular thereto is applied to the substrate without unevenness, that is, without generating an island-like liquid pool.
このようにして基板上に塗布された処理液は、 次に、 膜液供給手段の 搬送方向下流側に設けられた気体噴出手段の直下に至ると、 この気体噴 出手段から噴出される板状の気流によって基板上から除去され、 即ち、 液切りが行われ、 当該基板が乾燥せしめられる。  The processing liquid applied on the substrate in this way then reaches the plate-like jetted from the gas jetting means when it reaches immediately below the gas jetting means provided on the downstream side in the transport direction of the film liquid supply means. The substrate is removed from the substrate by the air current, that is, the liquid is drained, and the substrate is dried.
このように、 この基板処理装置によれば、 基板上に均質な膜厚の処理 液が塗布された状態、 即ち、 基板上に島状の液溜りが生じていない状態 で、 液切りを行うようにしているので、 従来問題となっていた液切りの 際の染みの発生を根本的に防止することができる。  As described above, according to the substrate processing apparatus, the liquid is drained in a state in which the processing liquid having a uniform film thickness is applied on the substrate, that is, in a state where no island-like liquid pool is generated on the substrate. Therefore, it is possible to fundamentally prevent the occurrence of stains at the time of draining, which has been a problem in the past.
また、 気体噴出手段より搬送方向上流側に膜液供給手段を設けたので 、 湿式処理部で発生するミス トをこの膜液によって完全に遮断すること ができる。 したがって、 液切り, 乾燥後の基板表面にミス トが付着 る のを効果的に防止することができ、 かかるミス トに起因した染みの発生 皆無にすることが可能である。 このため、 湿式処理部と気体噴出手段と の間の距離を長く とる必要がなく、 装置の小型化を図ることができる。 なお、 前記気体噴出手段は、 その開口部長手方向が前記搬送方向と直 交する方向に対して傾斜するように配設されているのが好ましい。 この ようにすれば、 気体噴出手段から噴出される気流によって、 処理液を基 板の側辺に向けて押し流すことができ、 スムーズに基板上から除去する ことができる。  Further, since the film liquid supply means is provided on the upstream side in the transport direction from the gas ejection means, the mist generated in the wet processing section can be completely blocked by the film liquid. Therefore, it is possible to effectively prevent mist from adhering to the substrate surface after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. For this reason, it is not necessary to increase the distance between the wet processing section and the gas ejection means, and the apparatus can be downsized. In addition, it is preferable that the gas ejecting means is disposed such that the longitudinal direction of the opening is inclined with respect to a direction orthogonal to the transport direction. According to this configuration, the processing liquid can be flushed toward the side of the substrate by the airflow ejected from the gas ejection means, and can be smoothly removed from the substrate.
また、 基板の下側にも同様に前記気体噴出手段を設けても良い。 また、 前記気体噴出手段の開口部と前記基板との間の距離は、 これを 1 m m以上 5 m m以下とするのが好ましい。 開口部と基板との距離が 1 m m未満であると、 基板上に塗布された処理液に開口部が触れるおそれ がある一方、 5 m mを超えると乾燥効果が薄れるからである。 Further, the gas jetting means may be similarly provided below the substrate. The distance between the opening of the gas ejection means and the substrate is It is preferable that the thickness be 1 mm or more and 5 mm or less. If the distance between the opening and the substrate is less than 1 mm, the opening may be in contact with the processing liquid applied on the substrate, while if it exceeds 5 mm, the drying effect is reduced.
また、 前記気体噴出手段は、 その複数を前記搬送方向に沿って並設し た構成と しても良い。 このようにすれば、 基板の乾燥効果をより高める ことができる。 図面の簡単な説明  Further, a plurality of the gas ejection means may be arranged in parallel along the transport direction. By doing so, the drying effect of the substrate can be further enhanced. BRIEF DESCRIPTION OF THE FIGURES
第 1 図は、 この発明にかかる好ましい基板処理装置の要部の概略構成 を示した模式的断面図であり、 第 2図は、 第 1 図の平面図であり、 第 3 図は、 第 2図の要部詳細図である。 また、 第 4図は、 第 1図に示した第 1上エアナイフの断面図であり、 第 5図は、 第 4図の矢示 V方向の平面 図であり、 第 6図は、 第 4図の矢示 V I方向の正面図である。 発明を実施するための最良の形態  FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a main part of a preferred substrate processing apparatus according to the present invention, FIG. 2 is a plan view of FIG. 1, and FIG. FIG. FIG. 4 is a cross-sectional view of the first upper air knife shown in FIG. 1, FIG. 5 is a plan view in the direction of arrow V in FIG. 4, and FIG. FIG. 6 is a front view in the direction of arrow VI in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 本発明をより詳細に説明するために、 添付図面に基づいてこれ を説明する。  Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第 1 図に示すように、 本発明にかかる基板処理装置は、 基板 Wを矢示 1 0方向に水平搬送する搬送手段 1 と、 この搬送手段 1 によって搬送さ れる基板 Wに対して湿式の処理を行う湿式処理部 W E Tと、 乾式の処理 を行う乾式処理部 D R Yと、 湿式処理部 W E Tと乾式処理部 D R Yとの 間に配設された膜液供給手段 4、 第 1 上エアナイフ 6、 第 1 下エアナイ フ 7、 第 2上エアナイフ 8および第 2下エアナイフ 9などを備えてなる なお、 前記湿式処理部 W E T、 膜液供給手段 4、 第 1 上エアナイフ 6 、 第 1 下エアナイフ 7、 第 2上エアナイフ 8、 第 2下エアナイフ 9及び 乾式処理部 D R Yは 2つの側壁 1 5 , 1 5、 底板 1 7および上板 1 7か らなるカバー体内に収納されている。 また、 膜液供給手段 4は、 ェアナ ィフ (本例では、 第 1 上エアナイフ 6および第 1下エアナイフ 7 ) の搬 送方向上流側に配設されている。 As shown in FIG. 1, a substrate processing apparatus according to the present invention includes a transfer unit 1 for horizontally transferring a substrate W in a direction indicated by an arrow 10; Wet processing unit WET that performs dry processing, dry processing unit DRY that performs dry processing, and membrane liquid supply means 4 disposed between the wet processing unit WET and dry processing unit DRY, the first upper air knife 6, the first It comprises a lower air knife 7, a second upper air knife 8, a second lower air knife 9, etc. The wet processing section WET, the membrane liquid supply means 4, the first upper air knife 6, the first lower air knife 7, the second upper air knife Air knife 8, 2nd lower air knife 9 and The dry processing section DRY is housed in a cover body consisting of two side walls 15 and 15, a bottom plate 17 and an upper plate 17. In addition, the membrane liquid supply means 4 is arranged on the upstream side in the carrying direction of the air fin (in this example, the first upper air knife 6 and the first lower air knife 7).
搬送手段 1 は、 大径の搬送ローラ Rと補助ローラ f とを備えて構成さ れる。 搬送ローラ Rは、 第 2図に示されるように、 前記両側壁 1 5 , 1 5間に横架されたシャフ ト 1 1 に適宜な間隔を設けて複数個設けられて おり、 シャフ ト 1 1 の両端は、 軸受によって回動可能に支持されている 。 また、 このシャフ ト 1 1 の一端は、 一方の側壁 1 5より外部に突出し て、 側壁 1 5の外部に設けられたローラ駆動装置 1 2に連結されている 。 斯く して、 搬送ローラ Rは、 ローラ駆動装置 1 2によリ駆動されて基 板 Wを矢示 1 0方向に搬送する。  The transporting means 1 includes a large-diameter transport roller R and an auxiliary roller f. As shown in FIG. 2, a plurality of transport rollers R are provided at appropriate intervals on a shaft 11 laid horizontally between the side walls 15, 15. Are rotatably supported by bearings. One end of the shaft 11 protrudes outside from one of the side walls 15 and is connected to a roller driving device 12 provided outside the side wall 15. Thus, the transport roller R is driven by the roller drive device 12 to transport the substrate W in the direction indicated by the arrow 10.
また、 補助ローラ r は、 基板 Wの搬送方向に沿って、 第 1 上エアナイ フ 6、 第 1下エアナイフ 7、 第 2上エアナイフ 8及び第 2下エアナイフ 9の近傍に短間隔で複数個設けられており、 支持プレー ト 2 1 , 2 3 , 2 5上にそれぞれ配設された支持部材 2 2 , 2 4 , 2 6によって、 適宜 回動自在に支持されている。 このように、 補助ローラ r を多数配設する ことで、 基板 Wの歪やたわみなどを防止して、 基板 Wの平面度を高精度 なものと し、 膜液供給手段 4によって基板 W上に供給された処理液の層 が不均一となるのを防止することができる。 なお、 支持プレー ト 2 1 , 2 3 , 2 5は、 前記両側壁 1 5 , 1 5に適宜固設されている。  A plurality of auxiliary rollers r are provided at short intervals in the vicinity of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 along the transport direction of the substrate W. The supporting plates 21, 23, 25 are rotatably supported by supporting members 22, 24, 26, respectively. By arranging a large number of auxiliary rollers r in this manner, the distortion and deflection of the substrate W are prevented, the flatness of the substrate W is made high, and the film liquid supply means 4 places the substrate W on the substrate W It is possible to prevent the supplied processing liquid layer from becoming uneven. The support plates 21, 23, 25 are fixed to the side walls 15, 15 as appropriate.
湿式処理部 W E Tには、 処理液を基板 Wの上面およびノまたは下面に 供給する処理 ¾供給手段 (図示せず) が設けられている。 この処理液供 給手段 (図示せず) は、 基板 Wの上方おょぴノまたは下方に配設された 配管 (図示せず) と、 この配管 (図示せず) に連結された複数のシャヮ 一ノズル (図示せず) を備えており、 処理液を供給する適宜処理液供給 源 (図示せず) に接続されている。 なお、 シャワーノズル (図示せず) は、 その各噴霧領域が全体として基板 Wの幅方向全域をカバーするよう に配置されている。 また、 図示しないが、 底板 1 6には集液部が形成さ れ、 この集液部には排液管が接続されており、 集液部に集められた処理 液が排液管を通して外部に排出されるようになっている。 The wet processing section WET is provided with a processing / supplying means (not shown) for supplying a processing liquid to the upper and / or lower surfaces of the substrate W. The processing liquid supply means (not shown) includes a pipe (not shown) provided above or below the substrate W, and a plurality of pipes connected to the pipe (not shown). Equipped with one nozzle (not shown) to supply processing liquid as needed Connected to a power source (not shown). The shower nozzle (not shown) is arranged such that each spray area covers the entire area in the width direction of the substrate W as a whole. Although not shown, a liquid collecting part is formed on the bottom plate 16, and a drain pipe is connected to the liquid collecting part, and the processing liquid collected in the liquid collecting part is discharged to the outside through the drain pipe. It is being discharged.
膜液供給手段 4は、 第 2図に示されるように、 液体供給源 4 0から供 給される処理液を膜状 (力一テン状) にして基板 W上の全幅にわたって 流下させるように構成されている。  As shown in FIG. 2, the film liquid supply means 4 is configured so that the processing liquid supplied from the liquid supply source 40 is formed into a film (force) and flows down over the entire width of the substrate W. Have been.
また、 基板 Wの下方位置であって、 当該基板 Wを挟んで前記膜液供給 手段 4と対向する位置には、 基板 Wの下面に向けて処理液を噴射する処 理液噴射手段 5が設けられている。 なお、 膜液供給手段 4および液体噴 射手段 5から供給される処理液は、 通常純水であるが、 これに限らず各 種の処理液を適用することができる。  Further, at a position below the substrate W and facing the film liquid supply means 4 with the substrate W interposed therebetween, a processing liquid jetting means 5 for jetting a processing liquid toward the lower surface of the substrate W is provided. Have been. The processing liquid supplied from the film liquid supply means 4 and the liquid jetting means 5 is usually pure water, but not limited thereto, and various types of processing liquids can be applied.
第 1上エアナイフ 6及び第 1 下エアナイフ 7は、 基板 Wを挟んで相互 に対向するように上下に並設され、 また、 第 2上エアナイフ 8及び第 2 下エアナイフ 9も同様に、 基板 Wを挟んで相互に対向するように上下に 並設されており、 各吹き出し口 6 1から乾燥気体を噴出して板状の気流 を生じさせ、 基板 Wの上下面に付着した処理液を除去する。  The first upper air knife 6 and the first lower air knife 7 are vertically arranged side by side so as to face each other across the substrate W. Similarly, the second upper air knife 8 and the second lower air knife 9 also The dry gas is blown out from each of the outlets 61 to generate a plate-like air flow, and the processing liquid attached to the upper and lower surfaces of the substrate W is removed.
これら、 第 1 上エアナイフ 6、 第 1 下エアナイフ 7、 第 2上エアナイ フ 8及び第 2下エアナイフ 9は、 その各長手方向 Lが基板 Wの搬送方向 と直交する方向、 即ち、 基板 Wの幅方向 Hに対して傾斜するように配置 されており、 各吹き出し口 6 1 が基板 Wの全幅にわたつて対峙するよう に構成されている。  The first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 have respective longitudinal directions L in a direction perpendicular to the substrate W transfer direction, that is, the width of the substrate W. The air outlets 61 are arranged so as to be inclined with respect to the direction H, and are configured to face each other over the entire width of the substrate W.
以下、 上記第 1 上エアナイフ 6、 第 1下エアナイフ 7、 第 2上ェアナ ィフ 8及び第 2下エアナイフ 9の具体的な構成について、 第 4図〜第 6 図に基づいて説明する。 なお、 第 1 上エアナイフ 6、 第 1下エアナイフ 7、 第 2上エアナイフ 8及び第 2下エアナイフ 9は、 それぞれ同じ構成 となっている。 したがって、 以下では、 第 1 上エアナイフ 6を代表とし てその構成を説明する。 Hereinafter, specific configurations of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 will be described with reference to FIGS. The first upper air knife 6 and the first lower air knife 6 7. The second upper air knife 8 and the second lower air knife 9 have the same configuration. Therefore, the configuration of the first upper air knife 6 will be described below as a representative.
第 4図に示されるように、 前記第 1上エアナイフ 6は、 長尺状の本体 6 4に前板 6 3をねじ 6 5で締結し、 これら前板 6 3、 本体 6 4のあい だに形成される幅広のスリ ツ ト 6 6の幅 Mを調整可能にしたものである 。 なお、 スリ ッ ト 6 6の開口部が前記吹き出し口 6 1 となっている。 また、 本体 6 4内には、 気体室 6 7、 気体供給路 6 8が形成されてお リ、 この気体供給路 6 8が気体供給源 6 0に接続している。 また、 特に 、 図示しないが、 気体供給路 6 8と気体供給源 6 0との間には流量調整 機構やエアフィルタなどが介在している。  As shown in FIG. 4, the first upper air knife 6 is configured such that a front plate 63 is fastened to a long main body 64 with screws 65, and between the front plate 63 and the main body 64. The width M of the wide slit 66 formed is adjustable. The opening of the slit 66 serves as the outlet 61. A gas chamber 67 and a gas supply path 68 are formed in the main body 64, and the gas supply path 68 is connected to a gas supply source 60. Although not shown, a flow rate adjusting mechanism, an air filter, and the like are interposed between the gas supply path 68 and the gas supply source 60.
第 5図及び第 6図に示すように、 前記スリツ ト 6 6、 気体室 6 7およ ぴ気体供給路 6 8は、 これらを 1 組として構成されるプロック Bが長手 方向 Lに直列に連結された構成となっておリ、 各気体供給路 6 8にそれ ぞれ気体供給源 6 0から気体が供給される。 また、 各スリツ ト 6 6およ び気体室 6 7は、 それぞれ長手方向 Lに沿って形成され、 各スリツ ト 6 6は隣接するスリッ ト 6 6と相互に連通している。 また、 気体供給路 6 8は、 ブロック Bの略中央に上方から気体室 6 7に向けて直線的に形成 されている。 このように、 ブロック Bを連結した構成とすることによリ 、 幅の広い長尺の基板 Wに対し容易に対応することが可能となる。 以上の構成を備えた第 1 上エアナイフ 6、 第 1下エアナイフ 7、 第 2 上エアナイフ 8及び第 2下エアナイフ 9は、 第 1図に示すように、 それ ぞれ基板 Wの法線方向に対して、 搬送方向下流側に角度 0 1 だけ傾いた 状態で固定されている。 このように、 傾斜させることで、 基板 Wに付着 した処理液が搬送方向上流側に向けて吹き飛ばされる。  As shown in FIGS. 5 and 6, the slit 66, the gas chamber 67, and the gas supply path 68 are connected in series in the longitudinal direction L with a block B composed of a set of these. The gas is supplied from the gas supply source 60 to each of the gas supply passages 68. Further, each slit 66 and the gas chamber 67 are formed along the longitudinal direction L, and each slit 66 communicates with an adjacent slit 66 mutually. Further, the gas supply passage 68 is formed substantially linearly from above in the approximate center of the block B toward the gas chamber 67. In this way, by adopting a configuration in which the blocks B are connected, it is possible to easily cope with a wide and long substrate W. As shown in FIG. 1, the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9, each having the above-described configuration, are respectively arranged with respect to the normal direction of the substrate W. Therefore, it is fixed in a state of being inclined at an angle of 0 1 toward the downstream side in the transport direction. As described above, the treatment liquid attached to the substrate W is blown off toward the upstream side in the transport direction by the inclination.
また、 第 1 図において、 第 1 上エアナイフ 6及び第 2上エアナイフ 8 については、 説明の便宜上、 角度調整用の目盛り板 6 2の図示を省略し ているが、 第 1 上エアナイフ 6及び第 2上エアナイフ 8も第 1下ェアナ ィフフ及び第 2下エアナイフ 9と同様に角度調整用の目盛り板 6 2を備 えておリ、 第 1 上エアナイフ 6、 第 1 下エアナイフ 7、 第 2上エアナイ フ 8及び第 2下エアナイフ 9は、 それぞれ、 角度調整用の目盛り板 6 2 を用いることによって、 前記傾斜角 0 1 の角度調整を行うことができる ようになつている。 Also, in FIG. 1, the first upper air knife 6 and the second upper air knife 8 For convenience of explanation, the scale plate 62 for angle adjustment is not shown, but the first upper air knife 6 and the second upper air knife 8 are the same as the first lower air knife and the second lower air knife 9. The scale plate for angle adjustment 62 is provided, and the first upper air knife 6, the first lower air knife 7, the second upper air knife 8 and the second lower air knife 9 are each a scale plate for angle adjustment 6 2 By using the above, the angle adjustment of the inclination angle 01 can be performed.
また、 図示しないが、 第 1上エアナイフ 6、 第 1下エアナイフ 7、 第 2上エアナイフ 8及び第 2下エアナイフ 9の両端は、 それぞれ上下方向 に移動可能に適宜支柱に取り付けられており、 基板 Wとの間の距離を調 節することができるようになつている。  Although not shown, both ends of the first upper air knife 6, the first lower air knife 7, the second upper air knife 8, and the second lower air knife 9 are respectively attached to the columns so as to be movable in the vertical direction. The distance between and can be adjusted.
なお、 第 1 上エアナイフ 6及び第 2エアナイフ 8の吹き出し口 6 1 と 、 基板 Wとの間の距離は、 1 m m以上 5 m m以下の範囲であるのが好ま しい。 吹き出し口 6 1 と基板 Wとの距離が 1 m m未満であると、 基板 W 上に塗布された処理液に吹き出し口 6 1が触れるおそれがあり、 5 m m を超えると乾燥効果が薄れるからである。 また、 前記傾斜角 0 1 は、 1 5度以上 6 0度以下であることが、 ムラがなく、 液の飛び散りもない安 定した境界面を形成することができるという観点から好ましい。  The distance between the outlet 61 of the first upper air knife 6 and the outlet 61 of the second air knife 8 and the substrate W is preferably in the range of 1 mm or more and 5 mm or less. If the distance between the outlet 61 and the substrate W is less than 1 mm, the outlet 61 may come into contact with the processing liquid applied on the substrate W, and if it exceeds 5 mm, the drying effect is reduced. . Further, it is preferable that the inclination angle 01 is 15 degrees or more and 60 degrees or less from the viewpoint that a stable boundary surface having no unevenness and no scattering of liquid can be formed.
また、 特に図示しないが、 前記側壁 1 5 , 1 5、 底板 1 7および上板 1 7によって囲まれた室には、 適宜排気機構が接続されており、 この排 気機構によって前記室内の気体が排気されるようになつている。  Although not particularly shown, an exhaust mechanism is appropriately connected to the chamber surrounded by the side walls 15 and 15, the bottom plate 17 and the upper plate 17, and the gas in the chamber is removed by the exhaust mechanism. It has become exhausted.
以上の構成を備えた本例の基板処理装置によれば、 搬送手段 1 によつ て搬送され、 湿式処理部 W E Tから排出された基板 W上に、 膜液供給手 段 4から膜状に形成された処理液が供給される。 これによリ、 前記搬送 方向及びこれと直交する方向に均質な膜厚の処理液がムラなく、 即ち、 島状の液溜リを生じることなく基板 W上に塗布される。 一方、 基板 Wの下面には、 処理液噴射手段 5から処理液が吹き付けら れ、 当該下面が洗浄される。 According to the substrate processing apparatus of the present example having the above configuration, the film is formed from the film liquid supply means 4 on the substrate W transferred by the transfer means 1 and discharged from the wet processing unit WET. The supplied processing liquid is supplied. Thus, the processing liquid having a uniform film thickness in the transport direction and the direction orthogonal thereto is applied to the substrate W without unevenness, that is, without generating an island-shaped liquid reservoir. On the other hand, the processing liquid is sprayed onto the lower surface of the substrate W from the processing liquid ejecting means 5, and the lower surface is cleaned.
そして、 基板 Wが更に搬送されると、 これが前記第 1上エアナイフ 6 と、 第 1 下エアナイフ 7との間に至り、 第 1 上エアナイフ 6から噴出さ れる板状の気流によって、 第 3図に示す如く、 基板 W上の処理液が矢示 1 3方向に押されて除去され、 当該基板 Wの上面が乾燥せしめられる。 一方、 基板 Wの下面は、 第 1 下エアナイフ 7から噴出される板状の気 流によって、 当該下面に付着した水滴が除去され、 乾燥せしめられる。 そして、 基板 Wが更に矢示 1 0方向に搬送されると、 その上下面がそ れぞれ第 2上エアナイフ 8および第 2下エアナイフ 9によって乾燥せし められ、 乾燥後の基板 Wが乾式処理部 D R Yに搬入される。  Then, when the substrate W is further transported, this reaches between the first upper air knife 6 and the first lower air knife 7, and is caused by a plate-like air current ejected from the first upper air knife 6, as shown in FIG. As shown, the processing liquid on the substrate W is removed by being pushed in the arrow 13 direction, and the upper surface of the substrate W is dried. On the other hand, the lower surface of the substrate W is dried by removing water droplets attached to the lower surface by the plate-like airflow ejected from the first lower air knife 7. When the substrate W is further conveyed in the direction indicated by the arrow 10, the upper and lower surfaces thereof are dried by the second upper air knife 8 and the second lower air knife 9, respectively, and the dried substrate W is dried. Processing unit DRY is carried in.
このように、 この基板処理装置によれば、 基板 W上に均質な膜厚の処 理液を塗布した状態、 即ち、 基板上に島状の液溜りが生じていない状態 で、 液切りを行うようにしているので、 従来問題となっていた液切りの 際の染みの発生を根本的に防止することができる。  As described above, according to the substrate processing apparatus, the liquid is drained in a state where the processing liquid having a uniform film thickness is applied on the substrate W, that is, in a state where no island-like liquid pool is generated on the substrate. As a result, it is possible to fundamentally prevent the occurrence of stains at the time of drainage, which has conventionally been a problem.
また、 第 1 上エアナイフ 6よリ搬送方向上流側に膜液供給手段 4を設 けたので、 湿式処理部で発生するミス トをこの膜液によって完全に遮断 することができる。 したがって、 液切り, 乾燥後の基板 W表面にミス ト が付着するのを効果的に防止することができ、 かかるミス 卜に起因した 染みの発生皆無にすることが可能である。 このため、 湿式処理部 W E T と第 1上エアナイフ 6との間の距離を長く とる必要がなく、 装置の小型 化を図ることができる。  Further, since the film liquid supply means 4 is provided upstream of the first upper air knife 6 in the re-transport direction, mist generated in the wet processing section can be completely shut off by the film liquid. Accordingly, it is possible to effectively prevent mist from adhering to the surface of the substrate W after draining and drying, and it is possible to eliminate the occurrence of stains caused by such mist. Therefore, it is not necessary to increase the distance between the wet processing section W ET and the first upper air knife 6, and the apparatus can be downsized.
また、 第 1 上エアナイフ 6を傾斜した状態に配置しているので、 処理 液を基板 Wの側辺に向けて押し流すことができ、 これをスムーズに基板 W上から除去することができる。 産業上の利用可能性 In addition, since the first upper air knife 6 is disposed in an inclined state, the processing liquid can be flushed toward the side of the substrate W, and can be smoothly removed from the substrate W. Industrial applicability
以上のように、 本発明にかかる基板処理装置は、 液晶表示器、 フォ ト マスク等のガラス基板や、 プリント配線基板、 半導体ウェハ等の基板の 製造工程に好適に使用することができる。  As described above, the substrate processing apparatus according to the present invention can be suitably used in a process for manufacturing a glass substrate such as a liquid crystal display and a photomask, and a substrate such as a printed wiring board and a semiconductor wafer.

Claims

請 求 の 範 囲 The scope of the claims
1 . 基板を略水平に搬送する搬送手段と、 1. transport means for transporting the substrate substantially horizontally;
前記搬送手段によって搬送される基板に対し湿式の処理を施す湿式処 理部と、  A wet processing unit that performs wet processing on the substrate transferred by the transfer unit;
前記湿式処理部より搬送方向下流側に配設され、 処理液を膜状に形成 して前記基板上に供給する膜液供給手段と、  A film liquid supply unit disposed downstream of the wet processing unit in the transport direction, forming a processing liquid into a film, and supplying the processing liquid onto the substrate;
スリッ ト状の開口部を具備し、 該開口部が前記基板の全幅にわたって 対峙するように、 前記膜液供給手段の前記搬送方向下流側に配設され、 前記開口部から気体を噴出させて板状の気流を生じさせる気体噴出手段 とを設けて構成したことを特徴とする基板処理装置。  A slit-shaped opening, which is disposed downstream of the film liquid supply means in the transport direction so that the opening faces the entire width of the substrate, and which is configured to eject gas from the opening to form a plate. And a gas ejecting means for generating a gas flow in a substrate processing apparatus.
2 . 前記気体噴出手段を、 その前記開口部長手方向が前記搬送方向と 直交する方向に対して傾斜するように配設したことを特徴とする請求の 範囲第 1 項記載の基板処理装置。  2. The substrate processing apparatus according to claim 1, wherein the gas jetting means is disposed such that a longitudinal direction of the opening is inclined with respect to a direction orthogonal to the transport direction.
3 . 前記気体噴出手段の開口部と前記基板との間の距離を、 1 m m以 上 5 m m以下と したことを特徴とする請求の範囲第 1 項または第 2項記 載の基板処理装置。 3. The substrate processing apparatus according to claim 1, wherein a distance between an opening of the gas jetting means and the substrate is set to 1 mm or more and 5 mm or less.
4 . 複数の前記気体噴出手段を前記搬送方向に沿って並設したことを 特徴とする請求の範囲第 1 項乃至第 3項記載のいずれかの基板処理装置 。  4. The substrate processing apparatus according to any one of claims 1 to 3, wherein a plurality of the gas ejection units are arranged in parallel along the transport direction.
PCT/JP2002/002223 2001-03-14 2002-03-08 Substrate treating device WO2002073672A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002572623A JPWO2002073672A1 (en) 2001-03-14 2002-03-08 Substrate processing equipment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-72696 2001-03-14
JP2001072696 2001-03-14

Publications (1)

Publication Number Publication Date
WO2002073672A1 true WO2002073672A1 (en) 2002-09-19

Family

ID=18930242

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/002223 WO2002073672A1 (en) 2001-03-14 2002-03-08 Substrate treating device

Country Status (5)

Country Link
JP (1) JPWO2002073672A1 (en)
KR (1) KR20030003235A (en)
CN (1) CN1455948A (en)
TW (1) TWI283441B (en)
WO (1) WO2002073672A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048336A1 (en) * 2003-11-14 2005-05-26 Sumitomo Precision Products Co., Ltd Liquid removing device
WO2015061206A3 (en) * 2013-10-21 2015-12-23 North Carolina State University Methods and constructs for compound delivery
WO2019011382A1 (en) * 2017-07-14 2019-01-17 RENA Technologies GmbH Drying device and method for drying a substrate

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101118394B1 (en) * 2004-02-18 2012-03-09 코닝 제팬 가부시끼 가이샤 Washing apparatus for plate material
CN100362625C (en) * 2005-03-30 2008-01-16 大日本网目版制造株式会社 Substrate processing apparatus and substrate processing method
KR101146953B1 (en) * 2005-12-16 2012-05-23 주식회사 케이씨텍 Device for adjusting gap between air knife and substrate
KR101234191B1 (en) * 2005-12-22 2013-02-18 주식회사 케이씨텍 Apparatus that control position of large substrate treatment module
JP4688741B2 (en) * 2006-06-26 2011-05-25 大日本スクリーン製造株式会社 Substrate processing equipment
TWI575641B (en) * 2016-06-02 2017-03-21 盟立自動化股份有限公司 Wet chemistry process apparatus
CN109132543B (en) * 2018-06-29 2020-07-14 深圳砺剑防卫技术有限公司 Sheet manufacturing device and sheet manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714819A (en) * 1993-06-23 1995-01-17 Nec Corp Substrate
JPH08236498A (en) * 1995-02-28 1996-09-13 Nec Corp Method of air knife drying
JP2001284310A (en) * 2000-03-31 2001-10-12 Shibaura Mechatronics Corp Apparatus and method for treating substrate
JP2001284777A (en) * 2000-04-04 2001-10-12 Hitachi Electronics Eng Co Ltd Apparatus and method for treatment of board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714819A (en) * 1993-06-23 1995-01-17 Nec Corp Substrate
JPH08236498A (en) * 1995-02-28 1996-09-13 Nec Corp Method of air knife drying
JP2001284310A (en) * 2000-03-31 2001-10-12 Shibaura Mechatronics Corp Apparatus and method for treating substrate
JP2001284777A (en) * 2000-04-04 2001-10-12 Hitachi Electronics Eng Co Ltd Apparatus and method for treatment of board

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005048336A1 (en) * 2003-11-14 2005-05-26 Sumitomo Precision Products Co., Ltd Liquid removing device
WO2015061206A3 (en) * 2013-10-21 2015-12-23 North Carolina State University Methods and constructs for compound delivery
WO2019011382A1 (en) * 2017-07-14 2019-01-17 RENA Technologies GmbH Drying device and method for drying a substrate
JP2020527689A (en) * 2017-07-14 2020-09-10 レナ テクノロジー ゲーエムベーハーRENA Technologies GmbH Drying device and method for drying the substrate
JP7273788B2 (en) 2017-07-14 2023-05-15 レナ テクノロジー ゲーエムベーハー DRYING APPARATUS AND METHOD FOR DRYING A SUBSTRATE

Also Published As

Publication number Publication date
TWI283441B (en) 2007-07-01
JPWO2002073672A1 (en) 2004-07-02
CN1455948A (en) 2003-11-12
KR20030003235A (en) 2003-01-09

Similar Documents

Publication Publication Date Title
KR100629767B1 (en) Substrate processing apparatus and substrate cleaning unit
US5762749A (en) Apparatus for removing liquid from substrates
JP4056858B2 (en) Substrate processing equipment
JP3918401B2 (en) Substrate drying apparatus, drying method, and substrate manufacturing method
KR20130023113A (en) Substrate processing apparatus
JP4776380B2 (en) Processing apparatus and processing method
JP2003145064A (en) Two-fluid jet nozzle and substrate cleaning device
JP3070511B2 (en) Substrate drying equipment
JP4579268B2 (en) Substrate processing equipment
JP2013026490A (en) Substrate processor
WO2002073672A1 (en) Substrate treating device
CN101219427A (en) Substrate processing device
JP2009178672A (en) Substrate treatment apparatus and substrate treatment method
JP4202934B2 (en) Coating device
TWI227035B (en) Substrate processing device of transporting type
JP3754905B2 (en) Substrate dryer
JP2001284777A (en) Apparatus and method for treatment of board
JP2006205086A (en) Washing device of substrate
JP3866856B2 (en) Substrate processing equipment
JP4328342B2 (en) Substrate processing method and substrate processing apparatus
JPH0994546A (en) Liquid-extraction device for substrate
JP2003133217A (en) Substrate processing apparatus
JP3766968B2 (en) Substrate processing method and substrate processing apparatus
JP4365192B2 (en) Transport type substrate processing equipment
WO2004112106A1 (en) Resist exfoliating apparatus

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref country code: JP

Ref document number: 2002 572623

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 028000285

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020027011886

Country of ref document: KR

AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR

WWP Wipo information: published in national office

Ref document number: 1020027011886

Country of ref document: KR