WO2013032216A3 - 이미지 센서의 단위 화소 및 수광 소자 - Google Patents

이미지 센서의 단위 화소 및 수광 소자 Download PDF

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Publication number
WO2013032216A3
WO2013032216A3 PCT/KR2012/006882 KR2012006882W WO2013032216A3 WO 2013032216 A3 WO2013032216 A3 WO 2013032216A3 KR 2012006882 W KR2012006882 W KR 2012006882W WO 2013032216 A3 WO2013032216 A3 WO 2013032216A3
Authority
WO
WIPO (PCT)
Prior art keywords
light receiving
receiving portion
shaped groove
oxidized layer
drain
Prior art date
Application number
PCT/KR2012/006882
Other languages
English (en)
French (fr)
Other versions
WO2013032216A2 (ko
Inventor
김훈
Original Assignee
Kim Hoon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kim Hoon filed Critical Kim Hoon
Priority to CN201280040524.2A priority Critical patent/CN103828052B/zh
Priority to JP2014528274A priority patent/JP6015976B2/ja
Priority to EP12828199.5A priority patent/EP2752877B1/en
Publication of WO2013032216A2 publication Critical patent/WO2013032216A2/ko
Publication of WO2013032216A3 publication Critical patent/WO2013032216A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

빛을 흡수하는 수광 소자는, 일정 각도의 V형 홈이 형성되는 기판, V형 홈의 상부에 플로팅된 구조로 형성되어 빛이 입사되는 수광부, 수광부와 상기 V형 홈 사이에 형성되고 터널링이 발생하는 산화막, V형 홈의 일측의 경사면에 산화막과 인접하여 형성되고, 산화막을 경계로 수광부와 이격되는 소스, V형 홈의 타측의 경사면에 산화막과 인접하여 형성되고, 산화막을 경계로 수광부와 이격되는 드레인 및 소스와 드레인 사이에서 V형 홈을 따라 형성되어, 소스와 드레인 간에 전류의 흐름을 형성하는 채널을 포함하되, 수광부에 입사된 빛에 의해 수광부에서 전자-정공쌍이 생성되고, 소스 또는 드레인 중 하나 이상과 수광부의 사이에서 산화막에서의 집중된 전계에 의한 터널링이 발생하고, 전자-정공쌍의 전자는 터널링에 의해 수광부로부터 소스 또는 드레인 중 하나 이상으로 방출되어, 전자의 방출에 의한 수광부의 전하량의 변화에 의해 채널의 전류 흐름이 제어된다.
PCT/KR2012/006882 2011-09-02 2012-08-29 이미지 센서의 단위 화소 및 수광 소자 WO2013032216A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280040524.2A CN103828052B (zh) 2011-09-02 2012-08-29 图像传感器的单位像素及其光电探测器
JP2014528274A JP6015976B2 (ja) 2011-09-02 2012-08-29 イメージセンサーの単位画素及びその受光素子
EP12828199.5A EP2752877B1 (en) 2011-09-02 2012-08-29 Unit pixel and light receiving element for image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/225,070 2011-09-02
US13/225,070 US8610234B2 (en) 2011-09-02 2011-09-02 Unit pixel of image sensor and photo detector thereof

Publications (2)

Publication Number Publication Date
WO2013032216A2 WO2013032216A2 (ko) 2013-03-07
WO2013032216A3 true WO2013032216A3 (ko) 2013-05-02

Family

ID=47752412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/006882 WO2013032216A2 (ko) 2011-09-02 2012-08-29 이미지 센서의 단위 화소 및 수광 소자

Country Status (7)

Country Link
US (1) US8610234B2 (ko)
EP (1) EP2752877B1 (ko)
JP (1) JP6015976B2 (ko)
KR (1) KR101377649B1 (ko)
CN (1) CN103828052B (ko)
TW (1) TWI499050B (ko)
WO (1) WO2013032216A2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653618B2 (en) * 2011-09-02 2014-02-18 Hoon Kim Unit pixel of color image sensor and photo detector thereof
US9391189B2 (en) 2012-09-16 2016-07-12 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US9660038B2 (en) 2012-09-16 2017-05-23 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
US9166048B2 (en) * 2012-09-16 2015-10-20 Sensor Electronic Technology, Inc. Lateral/vertical semiconductor device
KR101626121B1 (ko) * 2013-12-13 2016-06-13 주식회사 비욘드아이즈 이미지 센서의 단위 화소
CN104218043B (zh) * 2014-09-05 2018-03-16 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
JP6484513B2 (ja) 2014-10-08 2019-03-13 株式会社テクノロジーハブ 画像センサ
US9735188B2 (en) 2015-01-15 2017-08-15 Hoon Kim Image sensor with solar cell function
MY174333A (en) * 2015-10-14 2020-04-08 Hoon Kim Image sensor with solar cell function
MY176378A (en) * 2015-10-14 2020-08-04 Hoon Kim Image sensor with solar cell function and electronic device thereof
CN106331541B (zh) * 2016-09-18 2019-06-21 首都师范大学 可收集寄生光生电荷的图像传感器
US10530334B2 (en) * 2018-05-10 2020-01-07 Globalfoundries Singapore Pte. Ltd. Acoustic wave filter formed on a V-groove topography and method for producing the same
CN108766973B (zh) * 2018-05-31 2020-09-08 广州锋尚电器有限公司 增强型cmos传感器发光二极管单元结构
KR102593949B1 (ko) * 2018-07-25 2023-10-27 삼성전자주식회사 이미지 센서
CN113743152B (zh) * 2020-05-27 2024-04-16 京东方科技集团股份有限公司 纹路识别装置

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Also Published As

Publication number Publication date
KR101377649B1 (ko) 2014-03-25
JP6015976B2 (ja) 2016-10-26
TW201314880A (zh) 2013-04-01
EP2752877A2 (en) 2014-07-09
CN103828052B (zh) 2016-07-20
KR20130025791A (ko) 2013-03-12
EP2752877A4 (en) 2015-07-01
US8610234B2 (en) 2013-12-17
US20130056709A1 (en) 2013-03-07
EP2752877B1 (en) 2019-11-20
WO2013032216A2 (ko) 2013-03-07
TWI499050B (zh) 2015-09-01
CN103828052A (zh) 2014-05-28
JP2014527307A (ja) 2014-10-09

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