WO2013015301A1 - 化合物結晶製造用のルツボ、化合物結晶の製造装置及びルツボを用いた化合物結晶の製造方法 - Google Patents
化合物結晶製造用のルツボ、化合物結晶の製造装置及びルツボを用いた化合物結晶の製造方法 Download PDFInfo
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- WO2013015301A1 WO2013015301A1 PCT/JP2012/068792 JP2012068792W WO2013015301A1 WO 2013015301 A1 WO2013015301 A1 WO 2013015301A1 JP 2012068792 W JP2012068792 W JP 2012068792W WO 2013015301 A1 WO2013015301 A1 WO 2013015301A1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Definitions
- the present invention relates to a crucible for producing a compound crystal, an apparatus for producing a compound crystal, and a method for producing a compound crystal, and more particularly, a crucible suitable for producing a fluoride crystal used as an optical material in the ultraviolet region. , A manufacturing apparatus, and a manufacturing method.
- the resolution of the projection optical system depends on the wavelength of light used and the NA (numerical aperture) of the projection optical system. That is, in order to improve the resolution, it is necessary to shorten the wavelength of the light to be used or to increase the NA of the projection optical system (the lens has a large aperture). However, if the NA is increased, the depth of focus becomes shallower. Therefore, it is advantageous to shorten the wavelength.
- the exposure light wavelength is being shortened, and the wavelength shifts from the g-line (wavelength 436 nm) and the i-line (wavelength 365 nm) to the excimer laser having a shorter wavelength.
- optical glass can be used up to the wavelength range of i-line, but for light in the wavelength range such as KrF excimer laser (wavelength 248 nm) and ArF excimer laser (wavelength 193 nm). Is difficult to use because of the low transmittance of optical glass.
- an optical element processed with quartz glass or a fluoride crystal for example, calcium fluoride (CaF 2 ) single crystal is generally used for an optical system of an exposure apparatus that uses a wavelength region of 250 nm or less as a light source. It has become.
- Calcium fluoride (fluorite) has a relatively high transmittance in the wavelength region of 193 nm.
- ultraviolet light having such a wavelength with high photon energy is irradiated for a long time, absorption and heat generation occur due to fine impurities and lattice defects contained in the crystal, resulting in damage. Therefore, chemically synthesized high-purity calcium fluoride is used for the production of a single crystal of calcium fluoride used as an optical element for an ArF excimer laser.
- Chemically synthesized high-purity calcium fluoride is generally provided as a raw material having a particle size of about 0.1 ⁇ m to a particle size of about 5 mm.
- Such powdered or granular calcium fluoride has a low bulk density, and therefore, when melted, its volume is significantly reduced. Therefore, when producing a relatively large calcium fluoride single crystal, a pre-processed product consisting of a polycrystalline bulk is prepared by a pre-processing step in which a powdered or granular calcium fluoride raw material is once melted and then solidified.
- a single crystal is manufactured by melting again in the crystal growth step (see, for example, Patent Document 1 and Patent Document 2).
- the Bridgman method (generally called the vertical Bridgman method because it uses a vertical furnace, also called the stock burger method or crucible descent method) is widely used.
- Conventional production of compound crystals taking as an example the production of calcium fluoride crystals, including a pretreatment step of melting a powder raw material to produce a pretreatment product, and a crystal growth step of growing a single crystal by the Bridgeman method
- a method and a manufacturing apparatus used in this manufacturing method will be described with reference to FIG.
- a pretreatment crucible 110, a pretreatment furnace 120, a crystal growth crucible 115, a crystal growth furnace 130, a control device (not shown), and the like are used.
- the pretreatment process for producing the pretreatment product by melting the calcium fluoride powder raw material is performed using the pretreatment crucible 110 shown in FIG. 3 (a) and the pretreatment furnace 120 shown in FIG. 3 (b). Is called.
- the pretreatment crucible 110 includes a conical bottom portion 110a and a cylindrical tube portion 110b that is connected to the bottom portion 110a and extends upward, and is configured in an open state.
- the pretreatment crucible 110 is a large-volume crucible in which the vertical dimension of the cylindrical portion 110b is relatively large in order to fill a large amount of powder raw material.
- the pretreatment furnace 120 is provided so as to be openable and closable by moving up and down with respect to the base plate 121 that forms the base of the furnace, and supports the bell jar 125 and the pretreatment crucible 110 that form a vacuum container together with the base plate in a closed state.
- the pretreatment crucible 110 is filled with a compound powder raw material Pp obtained by mixing a raw material powder of calcium fluoride and a scavenger.
- the pretreatment crucible 110 filled with the powder raw material Pp is supported by the crucible support member 122, and the bell jar 125 is lowered and brought into close contact with the base plate 121 to be closed.
- the inside of the vacuum vessel formed by the base plate 121 and the bell jar 125 is evacuated by a vacuum device and kept at a vacuum degree of about 10 ⁇ 3 to 10 ⁇ 4 Pa.
- the inside of the vacuum vessel is heated by the heater 126, and the temperature in the vacuum vessel is raised to a temperature range of 1370 to 1450 ° C. higher than the melting point of calcium fluoride to melt the powder raw material Pp.
- the temperature of is lowered to room temperature to solidify the melt.
- the pre-processed product Pb which consists of a polycrystalline bulk of calcium fluoride is produced.
- the pretreatment product Pb produced in the pretreatment process is taken out from the pretreatment crucible 110 and replaced with a crystal growth crucible 115 as shown in FIG.
- the crystal growing crucible 115 is also in a state where the upper part composed of the conical bottom part 115a and the cylindrical tube part 115b extending upward is connected to the bottom part 115a.
- the diameter of the cylinder part 115b is slightly larger than the cylinder part 110b of the pretreatment crucible.
- the crystal growth step is a step of re-melting the polycrystalline calcium fluoride that has been melted and solidified in the pretreatment step into a bulk state to form a single crystal. In this step, the volume change amount when the polycrystalline bulk is changed to a single crystal is small. Therefore, the crucible 115 for crystal growth is a crucible having a small volume that can accommodate the pre-processed product Pb because the size of the cylindrical portion 115b is relatively small.
- the crystal growth process is performed using the above-described crystal growth crucible 115 and the crystal growth furnace 130 shown in FIG.
- the crystal growth furnace 130 is provided so as to be openable and closable by moving up and down with respect to the base plate 131 that forms the base of the furnace, and supports the bell jar 135 that forms a vacuum container together with the base plate and the crystal growth crucible 115 in the closed state.
- a lower heater 136b And a lower heater 136b, a heat insulating material 137 covering the inside of the bell jar 135, a partition heat insulating material 138 provided between the upper heater 136a and the lower heater 136b and dividing the inside of the vacuum vessel into a high temperature side furnace chamber 130a and a low temperature side furnace chamber 130b. Evacuate the vacuum chamber And the like empty device (not shown).
- the crucible support member 132 supports the crystal growing crucible 115 in which the pre-processed product Pb replaced from the pre-processing crucible is accommodated by the replacement operation described with reference to FIG.
- the bell jar 135 is lowered and brought into close contact with the base plate 131 to close the inside of the bell jar 135, and the inside of the vacuum vessel formed by the base plate 131 and the bell jar 135 is evacuated by a vacuum device, and 10 ⁇ 3 to 10 ⁇ 4 Pa. Maintain a degree of vacuum.
- the position of the crystal growth crucible 115 in the height direction is set by the elevating drive mechanism 133 so that the crystal growth crucible 115 is positioned in the high temperature side furnace chamber 130a.
- the inside of the vacuum vessel When the inside of the vacuum vessel reaches the above degree of vacuum, the inside of the vacuum vessel is heated by the upper heater 136a, and the temperature in the vacuum vessel is raised to a temperature range of 1370 to 1450 ° C., which is higher than the melting point of calcium fluoride. Melt Pb.
- the crystal growth crucible 115 is pulled down at a speed of about 0.1 to 5 mm / h by the elevating drive mechanism 133 toward the low temperature side furnace chamber 130b, and the crystal Pc is gradually grown from the lower part of the crystal growth crucible 115.
- the lower heater 136b is set at a lower temperature than the upper heater 136a. The crystal growth is finished when the molten calcium fluoride is crystallized to the uppermost part.
- the production of calcium fluoride crystals is taken as an example, and the powder raw material Pp filled in the pretreatment crucible 110 is melted by the pretreatment furnace 120 as the first structural example in the conventional production method of compound crystals.
- FIG. 4 a method in which the replacement work of the pre-processed product Pb is not performed as a second configuration example in the conventional manufacturing method of a compound crystal will be described by taking again the manufacture of calcium fluoride crystals. To do.
- the crystal growth crucible 215 is a comparatively large size similar to the size of the pretreatment crucible 110 described above, and the crystal growth furnace 230 includes the crystal growth crucible 215. It is a large one according to the size.
- the basic configuration of the pretreatment furnace and the crystal growth furnace is the same as that of the first configuration example described above. Therefore, the same parts are denoted by the same reference numerals and redundant description is omitted, and different parts are briefly described.
- the apparatus for producing a calcium fluoride crystal of this configuration example includes a pretreatment furnace 120, a crystal growth crucible 215, a crystal growth furnace 230, and a control device (not shown).
- a pretreatment crucible is not used when pretreatment is performed, and a crystal raw crucible 215 is filled with a powder raw material and melted to produce a pretreatment product.
- the crystal growth crucible 215 is configured in such a state that an upper portion composed of a conical bottom portion 215a and a cylindrical tube portion 215b extending upwardly connected to the bottom portion 215a is opened.
- the raw material powder has a small bulk density, and a single crystal having a sufficient size cannot be grown with a volume comparable to that of the crystal growth crucible 115.
- the crystal growth crucible 215 is configured as a large-capacity crucible having a vertical dimension of the cylinder portion 215 b longer than the cylinder portion 115 b of the crystal growth crucible 115 and having a volume equivalent to that of the pretreatment crucible 110.
- the pretreatment process shown in FIG. 4B is performed in the same manner as the pretreatment process described with reference to FIG. That is, the crucible for crystal growth 215 filled with the powder raw material Pp is supported by the crucible support member 122 and closed by closely attaching the bell jar 125 to the base plate 121, and the inside of the vacuum vessel formed by the base plate 121 and the bell jar 125 is closed. Evacuate and depressurize to a predetermined degree of vacuum. When a predetermined degree of vacuum is reached, the inside of the vacuum vessel is heated by the heater 126, and the temperature inside the vacuum vessel is raised to a temperature higher than the melting point of calcium fluoride. After melting the powder raw material Pp, the temperature in the vacuum vessel is lowered to room temperature and solidified to produce a pretreated product Pb made of a calcium fluoride polycrystal bulk.
- the crystal growth crucible 215 having the pretreatment product Pb therein is taken out from the pretreatment furnace 120 and supported by the crucible support member 132 in the crystal growth furnace 230 shown in FIG.
- the crystal growth furnace 230 is a large-sized furnace that matches the size of the crystal growth crucible 215.
- the volume of the pretreatment product Pb obtained in the pretreatment process (the height of the upper surface of the pretreatment product Pb) is approximately the same as the volume of the pretreatment product in the first configuration example described above.
- the volume of the high temperature side furnace chamber 230a above the partition heat insulating material 138 is larger than the volume of the low temperature side 130b below the partition heat insulating material 138, and the bell jar 235 is the crystal growth in the first configuration example. It is larger than the bell jar 125 of the furnace 230, and the upper heater 236a and the heat insulating material 237 are also large.
- the crystal growth process shown in FIG. 4C is performed in the same manner as the crystal growth process described with reference to FIG. That is, the crystal growing crucible 215 having the solidified pre-processed product Pb therein is supported by the crucible support member 132 and the bell jar 235 is brought into close contact with the base plate 131 to be closed.
- the inside of the vacuum vessel formed by the base plate 131 and the bell jar 235 is evacuated and depressurized to a predetermined degree of vacuum.
- the position of the crystal growth crucible 215 in the height direction is set by the elevating drive mechanism 133 so that the entire crystal growth crucible 215 is positioned in the high temperature side furnace chamber 230a.
- the inside of the vacuum container When the inside of the vacuum container reaches a predetermined degree of vacuum, it is heated by the upper heater 236a, and the temperature in the vacuum container is raised to the melting point of calcium fluoride or higher to melt the pretreatment product Pb.
- the crystal growth crucible 215 is pulled down by the elevating drive mechanism 133 toward the low temperature side furnace chamber 130b, and the crystal Pc is gradually grown from the lower part of the crystal growth crucible 215.
- the lower heater 136b is set to a temperature lower than that of the upper heater 236a. The crystal growth is finished when the molten calcium fluoride is crystallized to the uppermost part.
- the conventional method and apparatus for producing a compound crystal as described above have the following problems.
- Such replacement work increases the manufacturing cost due to the generation of work man-hours, and may lead to deterioration of optical characteristics due to metal impurity contamination and oxygen storage during the replacement work.
- the replacement work for replacing the pretreatment product from the pretreatment crucible to the crystal growth crucible does not occur.
- the same crystal growth crucible 215 is used for the pretreatment step and the crystal growth step for melting a powder material having a low bulk density to produce a pretreatment product, it is necessary to use a large volume crystal growth crucible. is there. Along with this, it is necessary to use a large crystal growth furnace (see FIG. 3 (d) and FIG. 4 (c) in comparison). Increasing the size of the crystal growth furnace increases the capital investment and raises the manufacturing cost.
- a crucible for producing a compound crystal is prepared by melting a powdery or granular compound raw material in a pretreatment furnace and then cooling and solidifying the compound crystal pretreatment product.
- a crucible used in the manufacture of a compound crystal that is grown into a compound crystal after melting the pretreatment product in a crystal growth furnace the first member comprising a bottom portion and a cylindrical portion connected to the bottom portion, and a state connected to the cylindrical portion; It consists of a hollow cylindrical second member that can be in both separated states, and the second member is connected to the first member to form a large-capacity crucible for preparing a pre-processed product However, the second member is separated from the first member to form a small volume crucible for crystal growth.
- the second aspect of the present invention is a crucible for producing a compound crystal according to the first aspect, and the compound is preferably a fluoride.
- a compound crystal manufacturing apparatus comprising a vacuum vessel, a crucible support member that supports the crucible inside the vacuum vessel, and a heater provided inside the vacuum vessel,
- the crucible includes a bottom part, a first member composed of a cylindrical part connected to the bottom part, and a hollow cylindrical second member that can be in both a state connected to the cylindrical part of the first member and a separated state.
- the crucible support portion is configured to support the crucible in a state where the second member of the crucible is connected to the first member.
- the compound crystal manufacturing apparatus is preferably a fluoride.
- a compound crystal manufacturing apparatus comprising: a vacuum vessel; a crucible support member that supports the crucible inside the vacuum vessel; and raising and lowering the crucible support member to move the crucible vertically. It consists of an elevating drive mechanism to be moved, and an upper heater and a lower heater provided inside the vacuum vessel, and the crucible is connected to the bottom part, the first member consisting of the cylindrical part connected to the bottom part, and the cylindrical part of the first member A hollow cylindrical second member that can be in both the separated state and the separated state, and the crucible support portion is configured such that the second member of the crucible is separated from the first member.
- One member is configured to be supported.
- the compound crystal manufacturing apparatus according to the fifth aspect is preferably a fluoride.
- a method for producing a compound crystal using a crucible wherein the crucible is separated from a state in which the bottom part and the cylindrical part connected to the bottom part are connected to the cylindrical part.
- a crystal growth step of growing a compound crystal by melting the compound pretreatment product formed in the first member and then growing the crystal of the compound is provided.
- the eighth aspect of the present invention there is provided a method for producing a compound crystal using the crucible of the seventh aspect, wherein the compound is preferably a fluoride.
- the present invention is configured as described above, the following effects can be obtained. Since there is no need to replace the pretreatment product with the crystal growth process for growing a single crystal of the compound, the manufacturing cost can be reduced by that amount, and at the same time, mixing of metal impurities accompanying the replacement operation is suppressed. Thus, a high quality compound single crystal can be obtained. In addition, since a small volume crucible can be used in the crystal growth step, a small crystal growth furnace can be used. In this respect as well, equipment investment can be suppressed and manufacturing costs can be reduced.
- FIG. 1 is a schematic explanatory diagram for explaining a crucible for producing a compound crystal, an apparatus for producing a compound crystal, and a producing method exemplified as an embodiment of the present invention.
- FIG. 2 is a schematic diagram illustrating a configuration example of a connection portion in the crucible.
- FIG. 3 is a schematic explanatory view for explaining a conventional compound crystal production apparatus and production method according to the first configuration example.
- FIG. 4 is a schematic explanatory view for explaining a conventional compound crystal production apparatus and production method of a second configuration example.
- FIG. 1 is a schematic explanatory view for explaining a manufacturing apparatus and a manufacturing method of an embodiment of the present invention by taking the manufacture of a calcium fluoride single crystal as an example.
- the crucible 10 In the production of the calcium fluoride single crystal in this embodiment, the crucible 10, the pretreatment furnace 20, the crystal growth furnace 30, and a control device not shown are used. As shown in FIG. 1A, the crucible 10 is connected to the bottom part 11a and the bottom part, a first member 11 comprising a cylindrical part 11b extending upward, and a state fixed to the cylindrical part 11b of the first member. It is comprised from the hollow cylindrical 2nd member 12 which can be set as both the states of isolate
- the first member 11 and the second member 12 constituting the crucible 10 are materials that can withstand high temperature conditions in the pretreatment furnace 20 and the crystal growth furnace 30 and at the same time, metal impurities and the like are not eluted into the molten calcium fluoride. For example, it is manufactured using isotropic graphite.
- connection structure configured to be detachably connected to the upper end portion of the cylindrical portion 11b of the first member 11 and the lower end portion of the cylindrical portion 12b of the second member 12 so as to form an integral cylindrical portion when connected. 15 is provided.
- FIG. 2 shows configuration examples 15 1 , 15 2 , 15 3 of the connection structure 15.
- Connecting structure 15 of the first configuration example shown in FIG. 2 (a) is an example in which the connection structure detachable by the external thread and a pair 15 11 of the internal thread, 15 12.
- a male screw 15 11 is formed on the outer peripheral surface of the upper end portion of the cylindrical portion 11 b of the first member 11, and the lower end portion of the cylindrical portion 12 b of the second member 12 is An internal thread 15 12 is formed on the inner peripheral surface to be engaged with the external thread 15 11 .
- a large-volume crucible for producing a pre-processed product is formed. Also, to release the engagement between the external thread 15 11 and the internal thread 15 12, when separated from the first member 11 and a second member 12, a small volume crucibles for crystal growth is formed by the first member 11.
- the configuration in which the male screw 15 11 is formed on the first member 11 side and the female screw 15 12 is formed on the second member 12 side is illustrated, but the combination of the male screw and the female screw is reversed (the first member 11 side is the female screw 15 12 ). Also good.
- Connecting structure 15 2 of the second configuration example shown in FIG. 2 (b) is an example in which the connection structure detachable by a pair of tapered flanges 15 21, 15 22 and the clamp 15 25.
- the upper end portion of the cylindrical portion 11 b of the first member 11 and the lower end portion of the cylindrical portion 12 b of the second member 12 are respectively tapered flanges whose outer peripheral surfaces are tapered.
- 15 21 and 15 22 are formed.
- the clamp 15 25 is formed with a tapered surface in surface contact with the tapered flanges 15 21 and 15 22 on the inner peripheral portion.
- the clamp being in contact with the tapered flange 15 21 of the first member and the tapered flange 15 22 of the second member, the clamp from their outer periphery 15
- the first member 11 and the second member 12 are connected to form a large-volume crucible for preparing a pre-processed product.
- the clamp 15 25 is removed, the connection between the tapered flanges 15 21 and 15 22 is released, and the first member 11 and the second member 12 are separated, the first member 11 forms a small-volume crucible for crystal growth.
- connection structure 15 3 of the third configuration example shown in FIG. 2C is an example in which a detachable connection structure is configured by a pair of flanges 15 31 and 15 32 and a fastener 15 35 made of bolts and nuts.
- disk-shaped flanges 15 31 and 15 32 are provided at the upper end portion of the cylindrical portion 11 b of the first member 11 and the lower end portion of the cylindrical portion 12 b of the second member 12, respectively. Is formed.
- the flanges 15 31 and 15 32 are formed with holes for inserting bolts at a predetermined pitch. Therefore, as shown in the lower part of FIG.
- the crucible 10 is a pre-processed product when the first member 11 and the second member 12 are connected together using the connection mechanism 15 (15 1 , 15 2 , 15 3 ).
- a large volume crucible for production is formed, and the first member 11 is configured to form a small volume crucible for crystal growth when the first member 11 and the second member 12 are disconnected and separated.
- the diameter and height of the first member 11 are set based on the size of the calcium fluoride single crystal to be manufactured, and the height of the second member 12 is the pretreatment product when the powder raw material is melted and solidified.
- the volume is set so as not to be larger than the volume of the first member 11.
- crucible 10 L the crucible 10 in the large volume state
- crucible 10 S the crucible 10 in the small volume state
- the pretreatment furnace 20 is provided so as to be openable and closable by moving up and down with respect to the base plate 21 that forms the base of the pretreatment furnace 20, and the vacuum vessel together with the base plate in a closed state.
- a heater 26 is provided at a position surrounding the periphery of the crucible 10 L , and a heat insulating material 27 covering the inner surface of the bell jar is provided outside the heater 26.
- the base plate 21 and the bell jar 25 are required to have corrosion resistance against a reactive gas that may be generated in the pretreatment furnace 20 with little outgas in a high temperature and high vacuum state. Therefore, the base plate 21 and the bell jar 25 are made of stainless steel having these characteristics.
- the size of the bell jar 25 (the volume of the pretreatment furnace 20) can accommodate the large-volume crucible 10 L in which the first member 11 and the second member 12 are connected, and the large-volume crucible 10 L is filled. The diameter and the height are set so that the powder raw material Pp can be efficiently melted to obtain a pre-processed product.
- the crucible support member 22 is heated together with the crucible 10 L to above the melting point of calcium fluoride. Therefore, the crucible support member 22 is made of a material that can withstand a high temperature state in the pretreatment furnace 20 and at the same time does not mix metal impurities into the molten calcium fluoride, for example, isotropic graphite similar to the crucible.
- the heater 26 a heater capable of raising the temperature to the melting point of calcium fluoride or higher is used, and the temperature is controlled by a control device (not shown).
- the heater control system includes a temperature sensor, a temperature regulator, a power controller, and the like.
- the crystal growth furnace 30 is provided so that it can be opened and closed by moving up and down with respect to the base plate 31 that forms the base of the crystal growth furnace 30, and forms a vacuum vessel together with the base plate in a closed state.
- bell jar 35 a crucible support member 32 for supporting the crucible 10 S, to maintain the crucible 10 S by lowering the crucible support member 32 elevation driving mechanism 33 for moving up and down, to a predetermined degree of vacuum evacuating the crystal growth in the 30 to It consists of a vacuum device (not shown).
- the bell jar 35 is provided with a partition heat insulating material 38 that divides the inside of the crystal growth furnace 30 into a high temperature side furnace chamber 30a and a low temperature side furnace chamber 30b.
- the upper high temperature side furnace chamber 30a has an upper heater 36a and a lower low temperature side furnace.
- lower heater 36b to the chamber 30b is provided in a position surrounding each crucible 10 S.
- a heat insulating material 37 that covers the inner surface of the bell jar 32 is provided outside the upper heater 36a and the lower heater 36b.
- the crystal growth furnace 30 is also exposed to a high temperature and high vacuum state. Therefore, the base plate 31 and the bell jar 35 are made of a material having a certain degree of corrosion resistance against a reactive gas that can be generated in the crystal growth furnace 30 with a low outgas in a high temperature and high vacuum state, for example, stainless steel having these characteristics.
- the size of the bell jar 35 (the volume of the crystal growth furnace 30) accommodates a crucible 10 S small volume state from the first member 11 to separate the second member 12, pre-treatment products in the crucible 10 S small volume state
- the diameter and height are set so that Pb can be efficiently melted and the single crystal can be grown by the vertical Bridgman method.
- the upper part of the crucible support member 32 is heated to the melting point of calcium fluoride or more together with the crucible 10 S.
- the crucible support member 32 is similar to a material such as a crucible, in which at least the upper portion of the support member 32 can withstand a high temperature state in the crystal growth furnace 30 and at the same time metal impurities and the like are not mixed into the molten calcium fluoride.
- As the heater 26, a heater capable of raising the temperature to the melting point of calcium fluoride or higher is used, and the temperature is controlled by a control device (not shown).
- the heater control system includes a temperature sensor, a temperature regulator, a power controller, and the like.
- This manufacturing method includes a powder raw material filling step I shown in FIG. 1 (a), a pretreatment step II shown in FIG. 1 (b), a second member separation step III shown in FIG. 1 (c), and FIG. It has a crystal growth process IV shown in d).
- the crucible 10 is a mixture of calcium fluoride raw material powder and scavenger in a state of a large volume crucible 10 L in which the first member 11 and the second member 12 are connected.
- the powder raw material Pp thus filled is filled.
- the raw material powder of calcium fluoride a chemically synthesized high-purity calcium fluoride powder having a particle size of about 0.1 ⁇ m to 5 mm is used.
- the filling amount of the powder raw material is a weight calculated from the density of the calcium fluoride single crystal so that the volume of the pretreated product solidified after melting does not become larger than the volume of the crucible 10 S in the small volume state.
- the scavenger has an effect of replacing an element contained as an impurity in the raw material with fluorine and removing the substituted impurity element as a volatile compound.
- a fluorinating agent such as lead fluoride (PbF 2 ) or carbon tetrafluoride (CF 4 ) is used.
- PbF 2 lead fluoride
- CF 4 carbon tetrafluoride
- the powder raw material Pp is melted in the pretreatment furnace 20 and then solidified by cooling, so that a pretreatment product Pb made of calcium fluoride polycrystal bulk is produced.
- the crucible 10 L filled with the powder raw material Pp is supported by the crucible support member 22, the bell jar 25 is closed and evacuated by a vacuum apparatus, and the inside of the pretreatment furnace 20 has a degree of vacuum lower than 10 ⁇ 3 Pa (preferably (Vacuum degree of 10 ⁇ 4 Pa or less).
- the temperature in the pretreatment furnace 20 is increased by the heater 26 to a temperature range of 1370 to 1450 ° C. higher than the melting point of calcium fluoride.
- the heater 26 When the powder raw material Pp is melted, the heater 26 is turned off to cool and solidify. Thereby, the impurity element contained in the powder raw material is removed as a volatile compound, and a pretreated product Pb made of a polycrystalline bulk of high-purity calcium fluoride is produced in the crucible.
- the crucible 10 L in the large volume state is changed from the crucible 10 L in the large volume state to the crucible 10 S in the small volume state while holding the pretreated product Pb solidified in the crucible 10 L taken out from the pretreatment furnace 20 as it is.
- the pretreated product Pb is melted in the crystal growth furnace 30 by the Bridgman method to produce a calcium fluoride single crystal.
- the crucible 10 S whose height has been lowered by removing the second member 12 is supported by the support member 32 of the crystal growth furnace 30, the bell jar 35 is closed, and the inside of the crystal growth furnace 30 is evacuated by a vacuum apparatus.
- the inside of the crystal growth furnace 30 is maintained at a vacuum level lower than 10 ⁇ 3 Pa (preferably a vacuum level of 10 ⁇ 4 Pa or less).
- the position of the crucible 10 S in the height direction is set by the elevating drive mechanism 33 so that the crucible 10 S is positioned in the high temperature side furnace chamber 30a.
- the temperature of the high temperature side furnace chamber 30a is in a temperature range of 1370 to 1450 ° C. higher than the melting point of calcium fluoride, and the temperature of the low temperature side furnace chamber 30b is slightly lower than the melting point of calcium fluoride. Keep in range.
- the pre-processed product melted in the high temperature side furnace chamber 30a moves the crucible 10 S at a speed of about 0.1 to 5 mm / h by the elevating drive mechanism 33.
- the calcium fluoride single crystal is gradually grown from the lower part of the crucible 10 S , and the single crystal is grown to the top. In this way, calcium fluoride single crystal Pc can be obtained.
- a powder raw material Pp was prepared by mixing lead fluoride (PbF 2 ) as a scavenger with high purity calcium fluoride raw material powder having a purity of 99.0% or more. And this powder raw material Pp was filled in the large-volume crucible 10 L to which the first member 11 and the second member 12 were connected (FIG. 1A, powder raw material filling step I).
- the inside of the pretreatment furnace 20 was evacuated by a vacuum device to a vacuum degree of 10 ⁇ 4 Pa or less.
- the temperature in the pretreatment furnace 20 was raised to 850 ° C. by the heater 26 and held for 8 hours, and the reaction between the impurities in the calcium fluoride raw material powder and the scavenger was advanced.
- the temperature in the pretreatment furnace 20 is raised to 1400 ° C. and maintained in that state, and after the powder raw material Pp is melted, the temperature in the pretreatment furnace 20 is gradually lowered to room temperature to obtain the melt. It was solidified to obtain a pretreated product Pb which is a calcium fluoride polycrystal (FIG. 1 (b), pretreatment step II).
- the second member 12 is separated from the first member 11 by releasing the connection state between the first member 11 and the second member 12 of the crucible.
- the second member 12 at the top of the crucible was removed, and the crucible was changed to a small volume crucible 10 S containing the pre-processed product Pb (FIG. 1 (c), second member separation step III).
- the crucible 10 S containing the pre-processed product Pb is placed in the high temperature side furnace chamber 30a in the crystal growth furnace 30 and evacuated by a vacuum device, and the inside of the crystal growth furnace 30 has a degree of vacuum of 10 ⁇ 4 Pa or less. did.
- the temperature of the high temperature side furnace chamber 30a was gradually raised to 1410 ° C. by the upper heater 36a and the lower heater 36b to completely melt the pretreatment product Pb in the crucible.
- the crucible 10 S is pulled down to the low temperature side furnace chamber 30b at a speed of about 0.5 mm / hr, and calcium fluoride is gradually added from the lower part of the crucible 10 S.
- a single crystal was grown to obtain a calcium fluoride single crystal ingot Pc (FIG. 1 (d), crystal growth step IV).
- the test piece cut out from the calcium fluoride single crystal ingot thus obtained was irradiated with a deep ultraviolet laser beam having a wavelength of 193 nm, and changes in internal transmittance and the like were measured. As a result, it was confirmed that it had good deep ultraviolet laser durability performance.
- the pretreatment step of solidifying the compound raw material powder after melting, and the compound single crystal There is no need to replace the pre-processed product between the growing crystal growing steps.
- the second member can be removed and a small volume crucible can be installed in the crystal growth furnace, so that a compound single crystal can be produced in a relatively small crystal growth furnace. Therefore, according to the present invention, it is possible to omit the replacement work of the pre-processed product which is difficult to handle by itself, and to reduce the manufacturing cost. A compound single crystal can be obtained.
- a relatively small crystal growth furnace can be used, capital investment can be suppressed and the manufacturing cost of the compound single crystal product can be reduced.
- the cross-sectional shape of the crucible is a rectangular or polygonal square tube or an ellipse.
- An elliptic cylinder may be sufficient.
- the calcium fluoride single crystal is exemplified as a representative example of the fluoride single crystal used for the optical element for the ultraviolet region, but the present invention is limited to the calcium fluoride single crystal.
- the same effect can be applied to barium fluoride (BaF 2 ) and strontium fluoride (SrF 2 ) whose crystal structure belongs to the same cubic system as calcium fluoride and has similar properties. Can be obtained.
- the vacuum container is exemplified by a base plate and a bell jar.
- the shape and material of the vacuum container are not particularly limited, and a desired temperature and degree of vacuum are realized. Any possible configuration can be used without problems.
- the object of the crucible for producing a compound crystal of the present invention is not limited to fluoride crystals, and oxide crystals such as sapphire ( ⁇ -Al 2 O 3 ) are also present. It is included in the object of the invention.
- the crucible material is preferably tungsten, molybdenum, or tungsten-molybdenum alloy, and the inside of the pretreatment furnace and the crystal growth furnace is not evacuated but in an inert gas atmosphere such as argon. It is preferable that
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Abstract
Description
次に、実施例として、フッ化カルシウム単結晶の製造について説明する。純度99.0%以上の高純度フッ化カルシウム原料粉末に、スカベンジャーとしてフッ化鉛(PbF2)を混合して粉末原料Ppを調製した。そして、この粉末原料Ppを第1部材11と第2部材12が接続された大容積状態のルツボ10Lに充填した(図1(a)、粉末原料の充填工程I)。
日本国特許出願2011年第163031号(2011年7月26日出願)
Claims (8)
- 化合物結晶製造用のルツボであって、
粉状または粒状の化合物原料を前処理炉において融解した後に冷却して固化させて化合物結晶の前処理品を作製し、前記前処理品を結晶育成炉において融解した後に化合物結晶に育成させる化合物結晶の製造に用いられるルツボであって、
底部及び前記底部と繋がる筒部からなる第1部材と、前記筒部に接続した状態と分離した状態の両方の状態とすることが可能な中空筒状の第2部材とからなり、
前記第1部材に前記第2部材が接続された状態となって前処理品作製用の大容積ルツボを形成し、前記第1部材から前記第2部材が分離された状態となって結晶育成用の小容積ルツボを形成するように構成した化合物結晶製造用のルツボ。 - 請求項1に記載の化合物結晶製造用のルツボであって、前記化合物はフッ化物である。
- 化合物結晶の製造装置であって、
真空容器と、前記真空容器の内部でルツボを支持するルツボ支持部材と、前記真空容器の内部に設けられたヒーターとからなり、
前記ルツボは、底部と前記底部と繋がる筒部からなる第1部材と、前記第1部材の前記筒部に接続した状態と分離した状態の両方の状態とすることが可能な中空筒状の第2部材とからなり、
前記ルツボ支持部は、前記ルツボの前記第2部材が前記第1部材に接続された状態で前記ルツボを支持するように構成した化合物結晶の製造装置。 - 請求項3に記載の化合物結晶の製造装置であって、前記化合物結晶はフッ化物結晶である。
- 化合物結晶の製造装置であって、
真空容器と、前記真空容器の内部でルツボを支持するルツボ支持部材と、前記ルツボ支持部材を昇降することにより前記ルツボを上下方向に移動させる昇降駆動機構と、前記真空容器の内部に設けられた上部ヒーターおよび下部ヒーターとからなり、
前記ルツボは、底部と前記底部と繋がる筒部からなる第1部材と、前記第1部材の前記筒部に接続した状態と分離した状態の両方の状態とすることが可能な中空筒状の第2部材とからなり、
前記ルツボ支持部は、前記ルツボの前記第2部材が前記第1部材から分離された状態で前記ルツボの前記第1部材を支持するように構成した化合物結晶の製造装置。 - 請求項5に記載の化合物結晶の製造装置であって、前記化合物はフッ化物である。
- ルツボを用いた化合物結晶の製造方法であって、
前記ルツボは、底部及び前記底部と繋がる筒部からなる第1部材と、前記筒部に接続した状態と分離した状態の両方の状態とすることが可能な中空筒状の第2部材とからなり、
前記第1部材に前記第2部材が固定された状態で、前記ルツボ内に前記粉状または粒状の化合物原料を充填し、融解した後に固化することにより前記化合物結晶の前処理品を前記第1部材内部に形成する前処理工程と、
前記化合物結晶の前処理品が前記第1部材内部に形成された状態で、前記第2部材を前記第1部材から分離するルツボ分離工程と、
前記第1部材内部に形成された前記化合物前処理品を融解した後に固化して前記化合物の結晶を育成させる結晶育成工程と、からなるルツボを用いた化合物結晶の製造方法。 - 請求項7に記載のルツボを用いた化合物結晶の製造方法であって、前記化合物はフッ化物である。
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CN201280036617.8A CN103717790A (zh) | 2011-07-26 | 2012-07-25 | 化合物晶体制造用的坩埚、化合物晶体的制造装置以及使用坩埚的化合物晶体的制造方法 |
JP2013525734A JP5741691B2 (ja) | 2011-07-26 | 2012-07-25 | 化合物結晶製造用のルツボ、化合物結晶の製造装置及びルツボを用いた化合物結晶の製造方法 |
DE112012003129.6T DE112012003129B4 (de) | 2011-07-26 | 2012-07-25 | Verfahren zum Herstellen eines Verbindungskristalls mittels eines Tiegels |
US14/163,095 US20140202377A1 (en) | 2011-07-26 | 2014-01-24 | Crucible for producing compound crystal, apparatus for producing compound crystal, and method for producing compound crystal using crucible |
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