WO2012157247A1 - 半導体モジュール用冷却器 - Google Patents
半導体モジュール用冷却器 Download PDFInfo
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- WO2012157247A1 WO2012157247A1 PCT/JP2012/003141 JP2012003141W WO2012157247A1 WO 2012157247 A1 WO2012157247 A1 WO 2012157247A1 JP 2012003141 W JP2012003141 W JP 2012003141W WO 2012157247 A1 WO2012157247 A1 WO 2012157247A1
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- refrigerant
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- semiconductor module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Definitions
- the present invention relates to a semiconductor module cooler, and in particular, a heat radiation fin is integrally formed on the back surface of a heat sink to which an insulating substrate on which a plurality of semiconductor elements are disposed is joined, and a cooling medium is caused to flow between the heat radiation fins.
- the present invention relates to a semiconductor module cooler that dissipates the heat generated by the semiconductor module.
- Semiconductor modules are widely used in power conversion devices represented by hybrid vehicles and electric vehicles.
- a semiconductor module constituting a control device for energy saving a power semiconductor element is provided to control a large current.
- Such power semiconductor elements tend to increase the amount of heat generated when a large current is controlled.
- the cooling method of the semiconductor module including a plurality of power semiconductor elements becomes a big problem.
- a liquid cooling type cooler (hereinafter also referred to as “cooler”) has been generally used for the semiconductor module.
- a liquid-cooled cooler that circulates a refrigerant
- the flow rate of the refrigerant is increased, the heat dissipating fins (cooling bodies) have a good heat transfer coefficient, or the fins are configured.
- Various ideas have been made, such as increasing the thermal conductivity of materials.
- Such a cooler is formed integrally with a metal base such that thin plate-like heat radiation fins are arranged at a uniform density in a flow path through which a cooling medium flows, and a semiconductor chip that generates heat is arranged on the metal base.
- the provided insulating substrate is bonded.
- a cooling passage 1002 surrounded by a wide cooling passage side wall 1004 is formed in a heat sink 1001.
- the cooling passage 1002 has an inlet 1003a and an outlet 1003b for the coolant at the front end and the rear end.
- an opening 1005 is formed in the cooling passage 1002 at a position facing the heat dissipation substrate 1104 of the two semiconductor modules disposed on the heat sink 1001.
- a large number of heat radiation fins 1105 arranged in parallel to the heat radiation substrate 1104 are inserted into the opening 1005, and the heat radiation fins 1105 are immersed in the cooling passage 1002.
- a plurality of insulating substrates 1103 are arranged on the heat dissipation substrate 1104, and semiconductor elements 1102 and circuit components are mounted on the insulating substrates 1103, respectively.
- a plurality of insulating substrates 1103 are covered with an upper lid 1101.
- a seal 1109 is provided between the heat sink 1001 and the heat dissipation substrate 1104 so as to surround the opening 1005.
- the flow rate of the cooling medium flowing in the cooler is large in the central portion in the width direction of the flow channel and small in the peripheral portion.
- the degree to which the semiconductor element 1102 arranged corresponding to the peripheral part of the flow path is cooled is smaller than the degree to which the arranged semiconductor element 1102 is cooled. If there is a temperature difference between the semiconductor elements, the output current of each semiconductor element is limited by the output current of the semiconductor element with the highest temperature, so other semiconductor elements have more output current in terms of temperature. In spite of being able to flow, there is a problem that a sufficient output cannot be ensured by being limited by the output current of the semiconductor element at the maximum temperature.
- the present invention has been made in view of the above points, and provides a cooler for a semiconductor module in which a temperature difference between semiconductor elements arranged in a direction intersecting the flow of a cooling medium is reduced with a simple structure. With the goal.
- one or more semiconductors in which a coolant is supplied to the coolant jacket from the outside and thermally connected to the coolant jacket on the outer surface via a heat sink. It is a cooler for a semiconductor module that cools an element.
- the refrigerant jacket has an opening through which a cooling fin formed on a back surface of the heat sink to which the semiconductor circuit is connected, a cooling fin cooling chamber for cooling the cooling fin, and the refrigerant.
- the upper end position of the refrigerant diffusion wall is higher than the upper end position of the refrigerant introduction port.
- the 3rd aspect of this invention makes the opposing surface with the said refrigerant
- coolant diffusion wall the inclined surface which inclines forward toward the upper part from the lower part of the surface.
- the fourth aspect of the present invention is such that the upper end position of the refrigerant diffusion wall has a height equal to or higher than the upper end position of the refrigerant introduction port, and the facing surface of the refrigerant diffusion wall to the refrigerant introduction port is The inclined surface is inclined forward from the bottom of the surface to the top.
- the refrigerant diffusion chamber is formed in a shape that spreads from the refrigerant introduction port toward the refrigerant diffusion wall.
- the refrigerant diffusion chamber is formed in a shape that widens toward the refrigerant diffusion wall from the refrigerant introduction port, and the refrigerant convergence chamber is directed from the refrigerant discharge port to the cooling fin cooling chamber. It is formed in a divergent shape.
- the plurality of semiconductor elements are arranged in a direction intersecting with a direction in which the refrigerant flows from the refrigerant introduction port to the refrigerant discharge port in the heat sink.
- the cooling fin is any one of a blade fin made of a plurality of flat plates, a plurality of round pins having a circular cross section, and a plurality of square pins having a cross section of a polygon. It consists of
- the pin arrangement is a staggered arrangement.
- a seal member that surrounds at least the opening is provided between the heat sink and the refrigerant jacket.
- a coolant can flow evenly in the width direction with respect to a cooling fin cooling chamber in which a cooling fin formed on the back surface of a heat sink in which a semiconductor element is disposed in a coolant jacket is inserted, and the heat sink
- the cooling of each semiconductor element is performed uniformly.
- the temperature difference between the semiconductor elements that generate heat is reduced, and any semiconductor chip can secure a sufficient output current.
- FIG. 13 illustrates one embodiment of the fin of FIG.
- FIG. 25 is a cross-sectional view taken along the line AA-AA ′ of FIG. 24.
- FIG. 25 is a BB-BB ′ sectional view of FIG. 24.
- FIG. 1 is a diagram showing an external appearance and an internal structure of a semiconductor module cooler according to the present invention.
- FIG. 1B is an appearance of the semiconductor module cooler 3.
- FIG. 1A shows a heat sink 1 according to the present invention and a semiconductor circuit (14, 15, 16) attached to the heat sink 1.
- this semiconductor circuit is an example of an IGBT (Insulated Gate Bipolar Transistor) module.
- FIG. 1C shows a refrigerant jacket (water jacket) 2 according to the present invention.
- FIG.1 (d) is the figure which looked at the refrigerant inlet of the refrigerant jacket (water jacket) 2 which concerns on this invention.
- the semiconductor circuits 14, 15, and 16 are configured as a W-phase circuit, a V-phase circuit, and a U-phase circuit that form a three-phase inverter.
- a semiconductor circuit 14 serving as a W-phase circuit includes an IGBT element 13 as a semiconductor element constituting the upper arm, and a free wheel diode 12 connected in reverse parallel to the IGBT element 13.
- the IGBT element 13 forming the lower arm and the freewheel diode 12 connected in reverse parallel to the IGBT element 13 are mounted on an insulating substrate attached to the heat sink 1.
- the semiconductor circuit 15 serving as the V-phase circuit and the semiconductor circuit 16 serving as the U-phase circuit have the same configuration as the semiconductor circuit 14 configuring the W-phase circuit.
- the refrigerant jacket (water jacket) 2 is configured in a flat rectangular parallelepiped state.
- FIG. 2 is a diagram showing an example in which a semiconductor module 200 is configured using the semiconductor module cooler 3 of the present invention.
- the semiconductor module 200 is an IGBT module as an example.
- a smoothing capacitor 4 is provided on the side of the IGBT module to which the electronic circuit board 29 is attached.
- FIG. 3 is a view showing a blade fin which is an example of a fin according to the present invention. This is a view of the heat sink 1 in FIG. In FIG. 3, the blade fins 11 are arranged in parallel on the back surface of the heat sink 1 in a direction orthogonal to the direction 100 in which the refrigerant flows.
- FIG. 4 is a cross-sectional view taken along the line AA ′ in FIG.
- FIG. 5 is a BB ′ cross-sectional view in FIG. 1.
- the semiconductor module cooler 3 according to the present invention will be described with reference to both drawings.
- the refrigerant jacket 2 has a refrigerant inlet 22 formed on the bottom side of the central portion on one long side.
- a coolant such as cooling water indicated by an arrow 201 introduced from the coolant inlet 22 is discharged as indicated by an arrow 202 from a coolant discharge port 21 formed on the bottom surface side of the central portion on the other long side of the coolant jacket 2.
- the refrigerant jacket 2 has a refrigerant inlet 22 formed on the bottom side of the central portion on one long side.
- a coolant such as cooling water indicated by an arrow 201 introduced from the coolant inlet 22 is discharged as indicated by an arrow 202 from a coolant discharge port 21 formed on the bottom surface side of the central portion on the other long side of the
- a space is provided between the refrigerant inlet 24 and the refrigerant inflow side end of the rectangular cooling fin cooling chamber 28 in which the blade fins 11 are arranged. This space is called the refrigerant diffusion chamber 26.
- a refrigerant diffusion wall 25 serving as a weir is provided near the cooling fin cooling chamber 28 of the refrigerant diffusion chamber 26.
- a space is provided between the refrigerant outlet side end of the cooling fin cooling chamber 28 and the refrigerant discharge port 21. This space is called a refrigerant convergence chamber 27.
- the refrigerant introduced from the refrigerant inlet 22 reaches the refrigerant diffusion chamber 26 from the refrigerant introduction port 24, passes between the blade fins 11 arranged in the cooling fin cooling chamber 28, reaches the refrigerant converging chamber 27, and reaches the refrigerant discharge port 21. And is derived from the refrigerant outlet.
- the blade fins 11 are cooled by the refrigerant, and the semiconductor circuits 14 to 16 attached to the heat sink 1 are cooled.
- the upper surfaces of the refrigerant diffusion chamber 26, the refrigerant converging chamber 27, and the cooling fin cooling chamber 28 facing the heat sink 1 are openings 30, and the opening 30 allows the blade fins 11 to be moved into the cooling fin cooling chamber 28 by the heat sink 1.
- a fixing screw is inserted into the mounting hole 17 formed in the heat sink 1, and the fixing screw is screwed into a female screw formed in the refrigerant jacket 2 and tightened to fix the heat sink 1 to the refrigerant jacket 2.
- the refrigerant flow is made uniform with respect to the blade fins 11 arranged in the direction orthogonal to the refrigerant inflow direction.
- the refrigerant discharged from the refrigerant introduction port 24, as indicated by an arrow 204 has a blade fin 11 in the central portion that is immediately before the refrigerant introduction port 24, In particular, a large amount of refrigerant flows in the lower part of the blade fin 11, and relatively little refrigerant flows through the blade fin 11 away from the refrigerant inlet 24.
- the refrigerant flowing in from the refrigerant introduction port 24 hits the refrigerant diffusion wall 25 and is blocked and spreads in the refrigerant diffusion chamber 26 to the left and right in the width direction, Furthermore, it gets over the refrigerant diffusion wall 25 and enters the gap between the blade fins 11 from above the blade fins 11, that is, near the heat sink 1. Since such a flow path is formed, the refrigerant flow is made uniform at the central portion and its peripheral portion in the width direction of the inlet.
- the height H of the refrigerant diffusion wall 25 is preferably set to be equal to or higher than the upper end of the refrigerant inlet 24 (H ⁇ 0).
- the horizontal cross-sectional shape of the refrigerant diffusion chamber 26 may be rectangular, as shown in FIG. 5, the refrigerant flowing from the refrigerant introduction port 24 efficiently flows when the refrigerant diffusion chamber 26 has a shape that widens from the refrigerant introduction port 24 toward the refrigerant diffusion wall 25.
- the flow of the refrigerant can be made smoother by forming a tapered inclined surface 206 on the bottom surface as shown in FIG. This further contributes to uniform semiconductor chip temperature. That is, by configuring the cross-sectional shape of the refrigerant diffusion chamber 26 in FIG. 8B to be an inverted trapezoidal shape, the flow of the refrigerant can be made smoother, and the refrigerant flow can be made uniform and the semiconductor chip temperature can be made uniform. Contribute.
- the surface of the refrigerant diffusion wall 25 facing the refrigerant diffusion chamber 26, that is, the surface facing the refrigerant inlet 24 may be a vertical surface as shown in FIG. 4, but is shown in FIG.
- the inclined surface is inclined forward from the lower part to the upper part, such as the inclined surface 205 of the refrigerant diffusion wall 25, the refrigerant flow can be made more uniform, further contributing to the uniformization of the semiconductor chip temperature.
- the inclination angle with respect to the vertical is preferably 60 to 80 degrees.
- the refrigerant converging chamber 27 is the same as the refrigerant diffusion chamber 26, and the horizontal cross-sectional shape of the refrigerant converging chamber 27 may be rectangular, but as shown in FIG. If the shape is widened toward the end in the direction of the refrigerant flow, the flow of the refrigerant can be made smoother, further contributing to uniform refrigerant flow and uniform semiconductor chip temperature. Specifically, by setting the inclination angle ⁇ out of the side wall forming the refrigerant converging chamber 27 with respect to the refrigerant outflow direction in a range of 60 ° ⁇ ⁇ out ⁇ 80 °, the refrigerant diffuses smoothly and contributes to the cooling performance. To do.
- the semiconductor circuits 14 to 16 to be cooled are placed on the heat sink 1 as shown in FIG. Arranging in a direction intersecting the flow path, particularly in a direction perpendicular to the flow path of the refrigerant, is desirable because the cooling effect of each of the semiconductor circuits 14 to 16 can be improved uniformly.
- a configuration is provided in which an O-ring 23 as a seal member is provided outside the opening 30 along the periphery of the opening 30 so as to surround the refrigerant flow path of the refrigerant jacket 2.
- the seal member is not limited to the O-ring 23, and other seal members such as packing can be applied.
- FIG. 9 shows the result of simulating the refrigerant flow for the configuration using the blade fins 11.
- the refrigerant flow is uniform in both the blade fin 11 in the center and the blade fin 11 in the peripheral part.
- a low temperature and a uniform temperature distribution were obtained for each IGBT element 13 of the semiconductor circuits 14 to 16.
- the heat sink 1 and the refrigerant jacket 2 are made of a metal material having high thermal conductivity such as copper or aluminum.
- FIG. 12 shows fins in which round pins 18 are arranged in a staggered manner. 12, 15, and 16, the arrow 100 indicates the flow direction of the refrigerant, and the reference numeral 101 indicates an attachment hole.
- FIG. 16 shows fins in which square pins 19 are arranged in a staggered manner. The present invention is effective even if the fins as shown in these figures are used. In this case, when the arrangement density of the arranged round pins 18 is viewed from the front surface (refrigerant introduction side) as shown in FIG. 13, the round pins 18 in the rear row are arranged between the round pins 18 in the front row and there is no gap. The effect is greater than when there is a gap. In FIG.
- the solid line pin indicates the front side
- the pin indicated by the dotted line indicates the pin in the next row.
- the diameter of the round pins 18 is 2 mm
- the height of the round pins 18 is 10 mm
- the pitch between the round pins 18 is 1 mm.
- one side of the square pins 19 is 2 mm
- the height of the square pins 19 is 10 mm
- the pitch between the square pins 19 is 1 mm.
- FIG. 11 shows a conceptual diagram of the result of simulating the refrigerant flow for the fins in which the round pins 18 of FIG. 10 are arranged in parallel.
- FIG. 14 the conceptual diagram of the simulation result of the flow of the refrigerant
- Table 1 As a result of simulating and actually measuring the temperature distribution of the semiconductor chip for these configurations, as shown in Table 1, a low temperature and a uniform temperature distribution were obtained for each IGBT element 13 of the semiconductor circuits 14 to 16.
- the square pin 19 with the staggered arrangement shown in FIG. is the same as the case of the round pin 18 that the effect is greater when there is no gap between the square pins 19. Further, as compared with the blade fin 11 described above, the same effect can be obtained even if the refrigerant diffusion wall 25 is low in height.
- the cooling fin for each of the blade fin 11, the round pin 18, and the square pin 19, the results of measuring the IGBT junction temperature with respect to the refrigerant flow rate and the pressure loss with respect to the refrigerant flow rate for the example in which the IGBT chip is provided in the semiconductor circuit are shown in FIGS. Shown in The maximum chip temperature was 141.6 ° C. for round pin fins and 136.0 ° C. for square pin fins, and the pressure loss was 4.8 kPa for round pin fins and 6.0 kPa for square pin fins. Since the round pin fin has a small volume density, the pressure loss is low.
- the square pin fin has a large surface area, so that the chip temperature is lowered, but the volume density of the fin is increased and the pressure loss is increased. It can be seen that the cooling performance improves in the order of the round pin 18, the square pin 19, and the blade fin 11.
- FIG. 23 shows a flow rate dependency graph (actual measurement value) of thermal resistance and pressure loss with respect to a flow rate of 5 to 15 L / min. Comparing 5L / min and 15L / min, both IGBT and FWD are about 10% at 15L / min, but the thermal resistance is lowered. It can be seen that the heat dissipation performance is improved by increasing the flow rate.
- the refrigerant inlet 22 and the refrigerant diffusion chamber 26 are arranged in the longitudinal direction of the refrigerant jacket 2.
- the refrigerant diffusion wall 25, the cooling fin cooling chamber 28, the refrigerant converging chamber 27, and the refrigerant discharge port 21 may be formed to form a refrigerant flow path in the longitudinal direction. Also in this case, the same effect as the case where the refrigerant flow path is formed in the short direction described above is obtained.
- the smoothing capacitor 4 is used.
- the smoothing capacitor 4 is usually disposed on the side surface in the longitudinal direction of the IGBT module as shown in FIG. For this reason, there are restrictions on the introduction and discharge directions of the refrigerant to the semiconductor module cooler 3, that is, the method of attaching the refrigerant inlet and the refrigerant outlet.
- FIG. 19A and 19B show the arrangement of the refrigerant inlet and outlet when the refrigerant flow path is formed in the short direction. That is, the configuration of FIG. 19A is a case where the refrigerant outlets and outlets are reversely arranged in the left-right direction as in FIG. 2 described above. In this case, the smoothing capacitor 4 is disposed on the refrigerant outlet side.
- the configuration of FIG. 19B is a case where the refrigerant inlet is formed on the right side surface of the refrigerant jacket 2 in the configuration of FIG. Also in this case, the smoothing capacitor 4 is arranged on the refrigerant outlet side.
- FIG. 20A the arrangement of the refrigerant inlets and outlets when the refrigerant flow path is formed in the longitudinal direction of the refrigerant jacket 2 is shown in FIG. 20A is a case where a refrigerant inlet is arranged on one end side in the longitudinal direction of the refrigerant jacket 2 and a refrigerant outlet is arranged on the other end side, and the smoothing capacitor 4 is short of the refrigerant jacket 2. It is a case where it arrange
- the configuration of FIG. 20B is a case where the refrigerant outlet is arranged on the lower surface side in the configuration of FIG.
- FIG. 20C is a case where the refrigerant inlet is arranged on the lower surface side in the configuration of FIG.
- the configuration of FIG. 20D is a case where both the refrigerant inlet and the refrigerant outlet are arranged on the lower surface side in the configuration of FIG.
- the present invention can be applied to the arrangement of any of these refrigerant inlets and outlets, and the same effects as those of the above-described embodiment can be obtained.
- double circles indicate that the refrigerant flows from the bottom to the top of the page.
- a cross mark in a circle indicates that the refrigerant flows out from the top to the bottom of the page.
- An arrow indicates the inflow direction of the refrigerant.
- the present invention is not limited to this, and one or more semiconductor circuits may be disposed on the heat sink 1. it can.
- cooling liquids such as antifreezing liquids other than cooling water, or cooling air, are applied. Can do.
- the square pin 19 as a cooling fin was a cross-sectional square shape, it is not limited to this, A cross-sectional shape is a triangular shape, a hexagonal shape square pin, etc. Can also be applied.
- cooling An opening may be formed only in the fin cooling chamber 28.
- the temperature difference between the semiconductor chips arranged in the direction intersecting the flow of the cooling medium can be reduced with a simple structure.
- the semiconductor module cooler can be provided.
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Abstract
Description
こうしたパワー半導体素子は、大電流を制御する際の発熱量が増大する傾向にある。とくに、パワー半導体素子の小型化や高出力化が進むにつれて発熱量が非常に大きくなるため、パワー半導体素子を複数備えた半導体モジュールではその冷却方法が大きな問題となる。
この従来例は、ヒートシンク1001内に、幅広の冷却通路側壁1004で囲まれる冷却通路1002が形成されている。この冷却通路1002には前端及び後端に冷却液の入口1003a及び出口1003bが形成されている。また、冷却通路1002には、ヒートシンク1001上に配置する2つの半導体モジュールの放熱基板1104に対向する位置に開口部1005が形成されている。この開口部1005内に放熱基板1104に並列配置された多数の放熱フィン1105が挿通され、この放熱フィン1105が冷却通路1002内に浸漬されている。
半導体素子間に温度差があると、それぞれの半導体素子の出力電流は、温度の最も高い半導体素子の出力電流に律速されてしまうので、それ以外の半導体素子は、温度的により多くの出力電流を流せるにも拘わらず、最大温度の半導体素子の出力電流に制限されて十分な出力を確保できないという問題点がある。
また、本発明の第3の態様は、前記冷媒拡散壁の前記冷媒導入口との対向面が、その面の下部から上部に向い前傾する傾斜面とされている。
また、本発明の第4の態様は、前記冷媒拡散壁の上端位置が前記冷媒導入口の上端位置以上の高さを有し、前記冷媒拡散壁の前記冷媒導入口との対向面が、その面の下部から上部に向い前傾する傾斜面とされている。
また、本発明の第6の態様は、前記冷媒拡散室が前記冷媒導入口から前記冷媒拡散壁に向かい末広がり形状に形成され、前記冷媒収束室が前記冷媒排出口から前記冷却フィン冷却室に向かい末広がり形状に形成されている。
また、本発明の第8の態様は、前記冷却フィンが、複数の平板からなるブレードフィン、断面が円形状である複数の丸ピン、断面が多角形状である複数の角ピンのいずれか1つで構成されている。
また、本発明の第10の態様は、前記ヒートシンクと前記冷媒ジャケットとの間に、少なくとも前記開口部を囲むシール部材を備えている。
また、冷媒ジャケット(ウオータージャケット)2は扁平な直方体状態に構成されている。
ヒートシンク1と冷媒ジャケット2の間には冷媒ジャケット2の冷媒流路を囲むように開口部30の周囲に沿いその開口部30の外側にシール部材としてのOリング23を備えている構成をとることができる。この場合、シール部材としてはOリング23に限らずパッキンなどの他のシール部材を適用することができる。
角ピン19を用いた実施例においては、角ピン19の一辺は2mm、角ピン19の高さは10mm、角ピン19間のピッチは1mmである。
・発生損失:IGBT 258W、FWD31W
・冷媒:LLC50%
・流量:5~15/min
・冷媒温度:65℃
また、上記実施形態では、ヒートシンク1上に3つの半導体回路14~16を配置した場合について説明したが、これに限定されるものではなく、ヒートシンク1上に1以上の半導体回路を配置することができる。
さらに、上記実施形態では、冷却フィンとしての角ピン19が断面四角形である場合について説明したが、これに限定されるものではなく、断面形状を三角形状、六角形状等の断面多角形状の角ピンを適用することもできる。
2 冷媒ジャケット
3 冷却器
4 平滑コンデンサ
11 ブレードフィン
12 フリーホイールダイオード
13 IGBT素子
14 半導体回路(W相用回路)
15 半導体回路(V相用回路)
16 半導体回路(U相用回路)
17、101 取り付け穴
18、102、103 丸ピン
19 角ピン
21 冷媒排出口
22 冷媒インレット
23 Oリング
24 冷媒導入口
25 冷媒拡散壁
26 冷媒拡散室
27 冷媒収束室
28 冷却フィン冷却室
29 回路基板
100、201、202 冷媒の流れの向き
200 半導体モジュール
203 冷媒導入口の中心
204 冷媒の流路
205 冷媒拡散壁の斜面
206 冷媒拡散室の底面の斜面
Claims (10)
- 冷媒ジャケットに外部から冷媒を供給して、その外面にヒートシンクを介して前記冷媒ジャケットに熱的に接続される一乃至複数の半導体素子を冷却する半導体モジュール用冷却器であって、
前記冷媒ジャケットは、
前記ヒートシンクの前記半導体素子が接続された面の裏面に形成された冷却フィンを挿通する開口部を有し、当該冷却フィンを冷却する冷却フィン冷却室と、
前記冷媒を導入する冷媒導入口と、
前記冷媒導入口から導入された冷媒を拡散して前記冷却フィン冷却室に供給する冷媒拡散室と、
前記冷媒拡散室の前記冷却フィン冷却室側に備えられ、前記冷媒拡散室で拡散された前記冷媒が乗り越えて前記冷却フィン冷却室側に導入される冷媒拡散壁と、
前記冷媒を外部に排出する冷媒排出口と、
前記冷却フィン冷却室と前記冷媒排出口との間に設けられた冷媒収束室とを少なくとも備えていることを特徴とする半導体モジュール用冷却器。 - 前記冷媒拡散壁の上端位置は前記冷媒導入口の上端位置以上の高さを有することを特徴とする請求項1に記載の半導体モジュール用冷却器。
- 前記冷媒拡散壁の前記冷媒導入口との対向面は、その面の下部から上部に向い前傾する傾斜面とされていることを特徴とする請求項1に記載の半導体モジュール用冷却器。
- 前記冷媒拡散壁の上端位置は前記冷媒導入口の上端位置以上の高さを有し、前記冷媒拡散壁の前記冷媒導入口との対向面は、その面の下部から上部に向い前傾する傾斜面とされていることを特徴とする請求項1に記載の半導体モジュール用冷却器。
- 前記冷媒拡散室は前記冷媒導入口から前記冷媒拡散壁に向かい末広がり形状であることを特徴とする請求項1乃至4の何れか1項に記載の半導体モジュール用冷却器。
- 前記冷媒拡散室は前記冷媒導入口から前記冷媒拡散壁に向かい末広がり形状であり、前記冷媒収束室は前記冷媒排出口から前記冷却フィン冷却室に向かい末広がり形状であることを特徴とする請求項1乃至4の何れか1項に記載の半導体モジュール用冷却器。
- 前記複数の半導体素子は、前記ヒートシンクにおいて前記冷媒導入口から前記冷媒排出口に向かう冷媒の流れる方向に対して交差する方向に配列されていることを特徴とする請求項1乃至4の何れか1項に記載の半導体モジュール用冷却器。
- 前記冷却フィンは、
複数の平板からなるブレードフィン、断面が円形状である複数の丸ピン、断面が多角形状である複数の角ピンのいずれか1つで構成されていることを特徴とする請求項1乃至4の何れか1項に記載の半導体モジュール用冷却器。 - 前記冷却フィンを複数の前記丸ピン及び複数の前記角ピンの何れか一方で構成する場合に、ピン配列を千鳥状配列としたことを特徴とする請求項8に記載の半導体モジュール用冷却器。
- 前記ヒートシンクと前記冷媒ジャケットとの間には、少なくとも前記開口部を囲むシール部材を備えていることを特徴とする請求項1乃至4の何れか1項に記載の半導体モジュール用冷却器。
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EP2711983A1 (en) | 2014-03-26 |
US9502329B2 (en) | 2016-11-22 |
JP6183426B2 (ja) | 2017-08-23 |
US20140054762A1 (en) | 2014-02-27 |
EP2711983B1 (en) | 2022-06-15 |
CN103477432B (zh) | 2017-06-20 |
EP2711983A4 (en) | 2015-07-29 |
CN103477432A (zh) | 2013-12-25 |
JP2015216409A (ja) | 2015-12-03 |
JPWO2012157247A1 (ja) | 2014-07-31 |
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