WO2012124428A1 - 蒸着装置並びに蒸着方法 - Google Patents

蒸着装置並びに蒸着方法 Download PDF

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Publication number
WO2012124428A1
WO2012124428A1 PCT/JP2012/053621 JP2012053621W WO2012124428A1 WO 2012124428 A1 WO2012124428 A1 WO 2012124428A1 JP 2012053621 W JP2012053621 W JP 2012053621W WO 2012124428 A1 WO2012124428 A1 WO 2012124428A1
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Prior art keywords
vapor deposition
mask
substrate
evaporation
opening
Prior art date
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Ceased
Application number
PCT/JP2012/053621
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English (en)
French (fr)
Japanese (ja)
Inventor
廣治 鳴海
博之 田村
正浩 市原
松本　栄一
三之 田島
永田　博彰
吉岡　正樹
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Canon Tokki Corp
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Canon Tokki Corp
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Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to KR1020137026765A priority Critical patent/KR101958499B1/ko
Publication of WO2012124428A1 publication Critical patent/WO2012124428A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a vapor deposition apparatus and a vapor deposition method for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate.
  • organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.
  • This organic EL display device has a structure in which an electrode layer and a plurality of organic light emitting layers are laminated on a substrate, and further a sealing layer is formed on the substrate. Corners and high contrast can be realized.
  • Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.
  • the vapor deposition mask for obtaining a desired film formation pattern is enlarged with an increase in the size of the substrate.
  • tension was applied to the vapor deposition mask. Since it must be manufactured by welding and fixing to the mask frame in the state, it is not easy to manufacture a large evaporation mask, and if this tension is not sufficient, the mask will be distorted and the center of the mask will be distorted. The degree of adhesion of the substrate is reduced, and the mask frame becomes large in order to take these into consideration, and the increase in thickness and weight becomes remarkable.
  • the substrate and the vapor deposition mask are spaced apart from each other, and the organic light emitting layer is increased by an evaporation source and an opening for generating directional evaporated particles.
  • the evaporation source and the opening for generating directivity have an integrated structure, and the integrated structure is heated to a high temperature to generate evaporated particles from the opening. Therefore, radiation heat from the evaporation source is received by the vapor deposition mask, and it is impossible to prevent a decrease in the position accuracy of the film formation pattern due to thermal expansion of the vapor deposition mask.
  • Evaporation film with a deposition pattern can be deposited using a deposition mask, and the structure can be simply and efficiently deposited by moving it in a separated state, and the limiting opening can be used as an evaporation source even in the separated state.
  • a mask holder with a scattering restriction part with an opening is provided with a vapor deposition mask.
  • This mask holder not only acts as a scattering restriction part but also suppresses the incidence of radiant heat from the evaporation source.
  • the evaporation port portion of the evaporation source has a slit shape that is long in the relative movement direction of the substrate and narrow in the lateral direction perpendicular thereto, so that the substrate and the evaporation mask are relatively moved in a separated state.
  • An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method capable of performing high-accuracy and high-rate vapor deposition.
  • a film forming material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.
  • scattering of the evaporated particles of the film forming material evaporated from the evaporation source 1 is between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1.
  • a mask holder 6 having a scattering restriction portion provided with a restriction opening portion 5 for restricting the direction is provided, and the substrate 4 and the vapor deposition mask 2 provided in a separated state are joined to the mask holder 6 and attached.
  • the substrate 4 is configured to be relatively movable with respect to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining a separated state from the vapor deposition mask 2.
  • the evaporation port 8 is formed of the base Laterally lengthening orthogonal to the fourth direction of relative movement are those of the vapor deposition apparatus characterized in that a narrow slit-like.
  • the evaporation source 1 containing the film forming material and the mask through which the evaporation particles of the film forming material evaporated from the evaporation port 8 of the evaporation source 1 pass in the vapor deposition chamber 7 in a reduced pressure atmosphere.
  • the vapor deposition mask 2 provided with the opening 3 is disposed, a plurality of the evaporation port portions 8 are arranged in parallel, and the plurality of evaporation port portions 8 are arranged on the substrate 4 which is aligned with the vapor deposition mask 2 in a separated state.
  • the vaporized particles scattered from the vapor are deposited through the mask opening 3 and a vapor deposition film having a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4.
  • the above-described mask holder 6 is disposed, and this The vapor deposition mask 2 disposed apart from the substrate 4 is attached to the mask holder 6, and the vapor deposition mask 2 is placed on the substrate 4 with respect to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1. In this relative movement direction, the deposition film of the deposition pattern of the deposition mask 2 is continued in this relative movement direction, and a deposition film is formed over a wide range even with the deposition mask 2 smaller than the substrate 4.
  • a plurality of the evaporation port portions 8 of the evaporation source 1 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4 and the restriction opening portion of the scattering restriction portion provided in the mask holder 6 5 are arranged side by side along the lateral direction, and the evaporated particles evaporating from the respective evaporation port portions 8 pass only through the opposed limiting opening 5 and further face the limiting opening 5.
  • a vapor deposition film of the film formation pattern is formed on the substrate 4 through the mask opening 3 of the vapor deposition mask 2 so that the vaporized particles from the vaporization port 8 at adjacent or separated positions are attached and captured. 2.
  • the vapor deposition apparatus according to claim 1, wherein the vapor deposition mask 2 is attached to an end of the mask holder 6 on the substrate 4 side.
  • the vapor deposition apparatus according to claim 4, wherein a tension is applied to the vapor deposition mask 2 at an end of the mask holder 6 on the substrate 4 side.
  • the vapor deposition mask 2 is divided into a plurality of pieces in the lateral direction orthogonal to the relative movement direction of the substrate 4, and the divided vapor deposition mask 2 is attached to the mask holder 6 in the lateral direction. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.
  • a plurality of the evaporation ports 8 of the evaporation source 1 are juxtaposed in a lateral direction orthogonal to the relative movement direction of the substrate 4, and the restricting openings are respectively opposed to the one or a plurality of evaporation ports 8.
  • the deposition mask 2 is attached to an end of the mask holder 6 on the substrate 4 side so as to cover each restriction opening 5 of the mask holder 6 having the scattering restriction portion provided with the portion 5.
  • the mask holder 6 extends in the relative movement direction of the substrate 4 and deforms the mask holder 6 due to tension applied to the vapor deposition mask 2 when the vapor deposition mask 2 is stretched on the mask holder 6.
  • the rib portion 24 for improving the rigidity of the mask holder 6 in the extending direction is provided between the restricting openings 5. is there.
  • the restriction openings 5 are provided on the front end surfaces of the ribs 24 extending in the relative movement direction of the substrate 4 between the restriction openings 5 of the mask holder 6. 10.
  • the shadow SH which is a side edge inclined portion of the vapor deposition film.
  • G is the gap between the substrate 4 and the vapor deposition mask 2
  • ⁇ x is the lateral opening width of the evaporation port 8
  • TS is the distance between the evaporation port 8 and the vapor deposition mask 2.
  • the gap G is set large and the opening width ⁇ x of the evaporation port 8 is set small so that the shadow SH does not reach the interval PP between the adjacent deposited films. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.
  • the evaporation source 1 includes an evaporation particle generation unit 26 that heats the evaporation material, a horizontally long diffusion unit 27 in which the evaporation particles generated from the evaporation particle generation unit 26 diffuse and uniformize the pressure, and the horizontally long diffusion And a plurality of the evaporation ports 8 arranged in the lateral direction perpendicular to the relative movement direction of the substrate 4, and one evaporation source 1 is arranged in the lateral direction perpendicular to the relative movement direction of the substrate 4.
  • the vapor deposition apparatus according to claim 1, wherein a plurality of the vapor deposition apparatuses are arranged in parallel.
  • the heat blocking part 19 for blocking the heat of the evaporation source 1 is provided around at least one of the periphery of the horizontally long diffusion part 27 or the periphery of the evaporation port part 8. This relates to a vapor deposition apparatus.
  • the horizontally long diffusing portion 27 is provided with an introducing portion 28 in which the evaporated particles diffused by the horizontally long diffusing portion 27 are scattered with directivity when ejected from the evaporation port 8.
  • the vapor deposition apparatus according to claim 13.
  • the plurality of evaporation port portions 8 are provided on the front end surface of the introduction portion 28 on the substrate 4 side, and the introduction length of the introduction portion 28 toward the substrate 4 side is defined as the relative movement direction of the substrate 4. 16.
  • the introduction unit 28 relates to the vapor deposition apparatus according to claim 15, wherein the introduction unit 28 is disposed so as to protrude from the laterally long diffusion unit 27 toward the substrate 4.
  • a plurality of the mask openings 3 of the vapor deposition mask 2 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, and each mask opening 3 is a slit long in the relative movement direction.
  • a plurality of openings are formed in the relative movement direction, and the total opening length in the relative movement direction is set to be longer as the distance from the central portion of the restriction opening 5 is longer in the lateral direction. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.
  • a film thickness correction plate 29 is provided on the substrate 4 side of the vapor deposition mask 2 so as to block a part of the mask opening 3 and set an opening range of each mask opening 3.
  • the vapor deposition apparatus according to claim 1 is concerned.
  • the formation interval Mpx in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film formation pattern deposited on the substrate 4 is the substrate 4 and the vapor deposition mask 2.
  • the distance between the vapor deposition mask 2 and the evaporation port 8 is TS
  • the formation interval in the lateral direction orthogonal to the relative movement direction of the substrate 4 of the film formation pattern is Px.
  • the opening dimension Mx in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 is set to be narrower than the film formation pattern formation interval Px.
  • the film formation width in the film formation pattern of the vapor deposition film is represented by the following formula (3), the vapor deposition: film Those of the vapor deposition device according to claim 1, wherein the set wider than the film formation pattern width P.
  • the vapor deposition apparatus according to claim 1, further comprising an exchange chamber (16) capable of reciprocatingly moving the mask holder (6) with the vapor deposition mask (2) attached to the vapor deposition chamber (7).
  • the cleaning mechanism for cleaning the film forming material attached to at least one of the mask holder 6 or the vapor deposition mask 2 attached to the mask holder 6 is provided in the exchange chamber 16. This relates to the vapor deposition apparatus.
  • the exchange chamber 16 is provided with a material recovery mechanism for recovering the film deposition material adhering to the mask holder 6 or at least one of the vapor deposition masks 2 attached to the mask holder 6. This relates to the described vapor deposition apparatus.
  • a plurality of the evaporation port portions 8 of the evaporation source 1 disposed in a state of being opposed to the restriction opening 5 are arranged in parallel in the lateral direction perpendicular to the relative movement direction of the substrate 4, and the plurality of evaporations arranged in parallel.
  • the gap G between the substrate 4 and the vapor deposition mask 2 the distance TS between the evaporation port 8 and the vapor deposition mask 2, and the gap between the mask openings 3 of the vapor deposition mask 2.
  • the evaporation particles evaporated from the evaporation port 8 that has passed through the mask opening 3 and the evaporation particles evaporated from the adjacent evaporation port 8 that has passed through the adjacent mask opening 3 are The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured to be superposed on the substrate 4.
  • a plurality of the evaporation port portions 8 of the evaporation source 1 disposed in a state of being opposed to the restriction opening 5 are arranged in parallel in the lateral direction perpendicular to the relative movement direction of the substrate 4, and the plurality of evaporations arranged in parallel.
  • the gap G between the substrate 4 and the vapor deposition mask 2 the distance TS between the evaporation port 8 and the vapor deposition mask 2, and the gap between the mask openings 3 of the vapor deposition mask 2.
  • the mask opening 3 in the lateral direction perpendicular to the relative movement direction of the substrate 4 in the restriction opening 5 is arranged so as to face the same restriction opening 5.
  • the vapor deposition mask 2 attached to the mask holder 6 is the first vapor deposition mask 2, and the second vapor deposition mask 10 is disposed between the substrate 4 and the first vapor deposition mask 2. It concerns on the vapor deposition apparatus of Claim 1 characterized by these.
  • the number of mask openings 11 of the second vapor deposition mask 10 in the lateral direction perpendicular to the relative movement direction of the substrate 4 disposed in the restriction opening 5 is the number of the second vapor deposition mask 10. More than the number of the mask openings 3 of the first vapor deposition mask 2 in the lateral direction orthogonal to the relative movement direction of the substrate 4 disposed in the same restriction opening 5 on the evaporation source 1 side.
  • the mask openings 3 and 11 of the respective vapor deposition masks 2 and 10 have different formation intervals corresponding to the difference in distance from the substrate 4, and the mask openings 11 of the second vapor deposition mask 10 are masked.
  • the second vapor deposition mask 10 is formed of a material having a larger linear expansion coefficient than the first vapor deposition mask 2 located on the evaporation source 1 side. This relates to a vapor deposition apparatus.
  • the number of the mask openings 11 of the second vapor deposition mask 10 in the lateral direction perpendicular to the relative movement direction of the substrate 4 disposed in the restriction opening 5 is the same as the restriction opening.
  • the number of mask openings 3 of the first vapor deposition mask 2 in the lateral direction perpendicular to the relative movement direction of the substrate 4 provided in the part 5 is arranged in the same restriction opening 5.
  • the deposition apparatus according to claim 1, wherein the film forming material is an organic material.
  • the vapor deposition apparatus according to any one of claims 1 to 31, wherein a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 by using the vapor deposition apparatus according to any one of claims 1 to 31. It concerns the method.
  • the deposition mask can be widely used by relatively moving the substrate in a separated state even if the deposition mask is smaller than the substrate.
  • Vapor deposition film can be deposited, and the structure can be simply and efficiently deposited by moving relative to each other in the separated state, and the limiting opening can be formed between the evaporation source and the vapor deposition mask even in the separated state.
  • the shadow of the deposition pattern (which also changes depending on the size of the gap between the substrate and the evaporation mask and the distance between the evaporation source and the evaporation mask)
  • the vapor deposition apparatus and vapor deposition method can further reduce the amount of protrusion of the end inclined portion and increase the evaporation rate by increasing the opening length of the evaporation port portion in the relative movement direction.
  • the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It becomes the vapor deposition apparatus and vapor deposition method for organic EL device manufacture which can implement
  • a plurality of the evaporation ports and the restriction openings are arranged in parallel in a lateral direction perpendicular to the relative movement direction of the substrate, so that the evaporated particles at adjacent positions do not pass. It becomes the outstanding vapor deposition apparatus which can vapor-deposit on the board
  • vapor deposition masks having individually set mask openings are arranged side by side so as to achieve uniformity in each vapor deposition region based on the film thickness distribution characteristics of each evaporation port portion. Or the vapor deposition mask can be individually replaced, which makes it more practical.
  • the rib portion provided extending in the relative movement direction of the substrate can prevent the mask holder from being deformed by the tension of the deposition mask and can maintain the tension of the deposition mask.
  • the rib portion provided extending in the relative movement direction of the substrate can prevent the mask holder from being deformed by the tension of the deposition mask and can maintain the tension of the deposition mask.
  • by providing a mask mounting support surface it is possible to firmly support and join the vapor deposition mask to the mask holder.
  • the film forming material evaporated from the evaporation source is obtained by making the shape of the restriction opening of the mask holder smaller than the opening area on the substrate side. More evaporation particles can be captured on the evaporation source side of the restriction opening, so that the film forming material adhering to the side of the restriction opening can be reduced, and the attached film after replacing the mask holder can be reduced. Easy material peeling and recovery.
  • the opening width of the evaporation port portion for example, when forming an RGB light emitting layer, it is a shadow that reaches an adjacent vapor deposition pattern (adjacent pixel).
  • the gap between the substrate and the vapor deposition mask can be increased, and the mask mounting support surface between the aforementioned limiting opening portions can be widened.
  • the vapor deposition mask itself can be provided with a temperature control mechanism, which makes it an excellent vapor deposition apparatus.
  • the pressure is uniformed among the plurality of evaporation ports arranged in parallel.
  • a plurality of evaporation sources having small diffusion chambers are arranged side by side in a lateral direction perpendicular to the relative direction of the substrate so that the pressure in the diffusion chamber becomes more uniform. May be.
  • a heat shut-off unit (functioning as a temperature control unit provided in the evaporation source) such as a cooling member is provided around the evaporation source to block radiant heat from the evaporation source.
  • the amount of material used for film formation of the evaporated particles ejected from one evaporation port portion is improved as compared with the evaporated particles having a low directivity with the increased directivity of the evaporated particles.
  • the scattering angle of the evaporated particles within the effective range of film formation is reduced as a whole, and the incident angle at which the evaporated particles are incident on the vapor deposition mask opening is also reduced as a whole.
  • the amount of change in the film forming pattern position with respect to the gap variation can be reduced.
  • the vapor deposition film having a film formation pattern determined by the horizontal arrangement of the mask opening portions of the vapor deposition mask is formed according to the relative movement direction of the substrate. Since the total opening length that is long in the relative movement direction of the substrate is set to be longer as the distance from the central portion of the opening for restriction (for example, the position facing the evaporation port portion) is increased in the horizontal direction, However, the film thickness can be made uniform by increasing the opening length correspondingly.
  • the vapor deposition mask when it is necessary to correct the film thickness after bonding the vapor deposition mask to the mask holder, the vapor deposition mask is not replaced by providing a correction plate on the substrate side.
  • the film thickness can be made uniform, or the film thickness can be adjusted with a correction plate using a vapor deposition mask having the same slit length in the relative movement direction of the substrate from the beginning.
  • the formation interval in the lateral direction perpendicular to the relative movement direction of the mask opening of the vapor deposition mask for determining the film deposition pattern deposited on the substrate is the gap between the substrate and the vapor deposition mask.
  • the opening dimension (mask opening width) in the lateral direction orthogonal to the relative movement direction of the substrate of the opening is the gap between the substrate and the evaporation mask, the distance between the evaporation mask and the evaporation port, and the deposition pattern of the evaporation film. Determined by the width, the substrate and the vapor deposition mask were separated by setting the width wider than the film formation pattern width of the vapor deposition film, and even if there was a gap between them, the position of the film formation pattern was shifted , It prevents to or deviation of the deposition pattern can be formed accuracy of deposition pattern with high precision.
  • the mask holder provided with the vapor deposition mask is provided with an exchange chamber that can reciprocate with the vapor deposition chamber, so that the mask holder can be easily carried in and out, and the film formation accompanying the exchange of the mask holder is performed.
  • the stop time of the process is shortened, and the operation rate of the vapor deposition apparatus is improved.
  • the exchange chamber is provided with a cleaning mechanism, the film forming material adhering to the mask holder or the vapor deposition mask can be cleaned in the vapor deposition apparatus, and the mask holder and the vapor deposition mask are reused. Can be easily used.
  • the exchange chamber is provided with a material recovery mechanism, the material can be recovered and reused.
  • the rib portion of the mask holder as in the invention described in claim 11 can be used.
  • the vapor deposition rate is increased by superimposing the vaporized particles from a plurality of vaporization ports arranged side by side on the substrate, and the vapor deposition apparatus has high productivity.
  • the evaporated particles evaporated from the plurality of evaporation port portions pass through one mask opening. Since the number of mask openings that determine the film formation pattern can be reduced and the interval between mask openings can be increased, the mechanical strength of the evaporation mask can be increased, and the destruction and adhesion of the mask during cleaning can be prevented. In addition, since the mask mounting support surface can be secured widely, the deposition mask and the mask holder can be joined more firmly, and the installation area of the cooling medium path or heat pipe provided in the deposition mask as a temperature control mechanism can be increased, from the evaporation source. The temperature rise of the vapor deposition mask due to the radiant heat can be prevented.
  • the incidence of radiant heat from the evaporation source is suppressed by the first vapor deposition mask, and then the opening pattern of the second vapor deposition mask is formed. Since a film can be formed, vapor deposition with higher accuracy can be performed while suppressing the temperature rise of the second vapor deposition mask.
  • the temperature of the vapor deposition mask is increased by a vapor deposition mask, a mask holder having a scattering restriction portion provided with a restriction opening to be joined thereto, and a temperature control mechanism provided in the mask holder in some cases. Since the temperature can be kept constant while suppressing the temperature, the second vapor deposition mask provided between the vapor deposition mask and the substrate can be made of a material having a large linear expansion coefficient because the temperature is further unlikely to rise.
  • the radiant heat incident from the first mask opening can be reduced, and the thermal expansion of the second mask is further increased. Can be suppressed.
  • a high-definition film formation pattern can be vapor-deposited by narrowing the second mask opening width.
  • the film-forming material evaporated from the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 configured as a scattering restriction part, and onto the substrate 4 through the mask opening 3 of the vapor deposition mask 2. After deposition, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.
  • the substrate 4 and the vapor deposition mask 2 are arranged in a separated state, and the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state.
  • the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state.
  • a mask holder 6 having a scattering restriction portion provided with the restriction opening 5 for restricting the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation source 1 between the vapor deposition mask 2 and the evaporation source 1.
  • the vapor deposition mask 2 is joined and attached to the mask holder 6 constituting the scattering restriction portion, the incidence of heat from the evaporation source 1 is suppressed and the temperature rise of the mask holder 6 and the vapor deposition mask 2 is increased.
  • the vapor deposition mask 2 is separated from the substrate 4, since the heat of the vapor deposition mask 2 is conducted to the mask holder 6 by being bonded to the mask holder 6, the vapor deposition mask 2 is kept at a constant temperature. The temperature holding function to hold is improved.
  • a temperature control mechanism for holding the temperature of the vapor deposition mask 2 is provided in at least one of the mask holder 6 or the vapor deposition mask 2 as necessary, the temperature rise of the mask holder 6 or the vapor deposition mask 2 is further suppressed.
  • the temperature holding function for holding the single-layer vapor deposition mask 2 at a constant temperature is improved.
  • the mask holder 6 having the scattering restriction portion also functions as a temperature holding function at the same time as the function of restricting the scattering direction of the evaporated particles, can suppress the temperature rise of the vapor deposition mask 2, and keep the vapor deposition mask 2 at a constant temperature. This also prevents distortion of the vapor deposition mask 2 due to heat.
  • the substrate 4 is moved relative to the vapor deposition mask 2, the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state from the vapor deposition mask 2, thereby the above-described vapor deposition mask 2.
  • a vapor deposition film having a film formation pattern is formed continuously in this relative movement direction, and a vapor deposition film is formed over a wide range even with a vapor deposition mask 2 smaller than the substrate 4 and is incident on the adjacent or away from the evaporation port 8. Overlapping of film formation patterns, distortion due to heat, etc. are sufficiently suppressed, and a vapor deposition apparatus capable of performing highly accurate vapor deposition is obtained.
  • the shadow SH of the film formation pattern (the amount of protrusion of the inclined portion on the side edge of the vapor deposition film) can be further suppressed, and the evaporation port 8
  • the evaporation rate can be increased by lengthening the opening length in the relative movement direction.
  • FIG. 1 is an overall view of the schematic apparatus.
  • an evaporation source 1 in which a film forming material (for example, an organic material for manufacturing an organic EL device) is housed in an evaporation chamber 7 (for example, in a vacuum chamber 7) in a reduced pressure atmosphere, and the evaporation source A substrate that is provided with a deposition mask 2 provided with a mask opening 3 through which evaporated particles of the film-forming material evaporating from a plurality of evaporation ports 8 arranged side by side pass, and is aligned with the deposition mask in a separated state 4, the evaporated particles scattered from the plurality of evaporation ports 8 pass through the mask opening 3 and are deposited, and an evaporation film having a film formation pattern defined by the evaporation mask 2 is formed on the substrate 4.
  • a film forming material for example, an organic material for manufacturing an organic EL device
  • the scattering restricting portion provided with the restricting opening 5 that prevents the evaporated particles from the adjacent or distant evaporation port 8 from passing between the substrate 4 and the evaporation source 1 is configured as described above.
  • Arranged mask holder 6 The mask 4 is attached to the mask holder 6 with the deposition mask 2 disposed in a separated state from the substrate 4.
  • the substrate 4 is attached to the mask holder 6 with the deposition mask 2 and the evaporation source 1.
  • the vapor deposition film of the film formation pattern defined by the vapor deposition mask 2 is continuously formed on the substrate 4 in a range wider than the vapor deposition mask 2 by this relative movement direction. It is configured to be.
  • vapor deposition can be performed on the substrate 4 having a large area, and from the evaporation ports 8 adjacent or separated by the restriction opening 5. Even if the vapor deposition mask 2 and the substrate 4 are separated from each other by preventing incidence, overlapping of the film formation patterns is prevented.
  • a plurality of evaporation sources 1 may be arranged side by side and the respective evaporation port portions 8 may be arranged in parallel.
  • the evaporation source 1 is composed of an evaporation particle generation unit 26 that heats the film forming material and a horizontally long diffusion unit 27 that diffuses the evaporation particles generated from the evaporation particle generation unit 26 to equalize the pressure,
  • a plurality of the evaporation port portions 8 are arranged in the laterally long diffusion portion 27 in the lateral direction.
  • the film-forming material is stored in the exchangeable particle generation unit 26 (crucible 26) by an automatic crucible exchange mechanism, and the vaporized particles heated and evaporated in the crucible 26 are temporarily stopped to equalize the pressure.
  • the horizontally long diffuser 27 is provided, and a plurality of slit-like openings that are long in the relative movement direction and perpendicular to the transverse direction are formed on the top of the horizontally long diffuser 27 along the lateral direction. A large number of the evaporation port portions 8 are arranged in parallel.
  • each evaporation port 8 arranged in parallel in the horizontal direction is provided at the tip of the introduction part 28 protruding from the horizontally long diffusion part 27 of the evaporation source 1, and the evaporation is performed around the horizontal diffusion part 27 or between the introduction parts 28.
  • a heat shut-off unit 19 that shuts off the heat of the source 1 is provided.
  • the heat shut-off unit 19 may be any unit that shields heat, but this embodiment employs a cooling plate 9D, has a medium path for supplying a cooling medium, and the cooling medium receives heat from the evaporation source 1.
  • a heat exchanging portion 20D for exchanging this heat through the medium path while taking the heat is provided to enhance the heat shielding effect.
  • the replacement chamber 16 (for example, the replacement chamber 16) is arranged in parallel, and the mask holder 6 provided with the vapor deposition mask 2 can be removed from the vacuum chamber 7 so that the mask holder 6 can be easily carried in and out.
  • the stop time of the film forming process accompanying the replacement of the holder 6 is shortened, and the operating rate of the vapor deposition apparatus is improved.
  • the replacement chamber 16 includes a cleaning mechanism for the mask holder 6 with the vapor deposition mask 2 to peel off the deposited film forming material, and the material collecting mechanism 17 collects and reuses the film forming material. Cleaning is performed to remove the film forming material and particles remaining on the surface of the mask holder 6 with the vapor deposition mask 2 after the film forming material is peeled off. Further, the mask holder 6 with the vapor deposition mask 2 may be configured to be cleaned by a cleaning mechanism without peeling and collecting the deposited film forming material, or the mask holder 6 with the vapor deposition mask 2 itself may be collected. May be exchanged.
  • an organic EL display in which a plastic film is used with the substrate 4 as the transparent substrate 4 and a cathode, a plurality of light emitting layers made of an organic substance, and an anode layer are provided on the plastic film 4 is used.
  • This method is also effective when a light emitting layer is deposited by a vacuum deposition method in a method of manufacturing by a roll-to-roll method.
  • FIG. 2 is a perspective view of the evaporation source 1.
  • the evaporation source 1 is provided with an introduction part 28 protruding from the horizontally long diffusion part 27 at the tip part.
  • the protruding length of the introducing portion 28 protruding toward the substrate 4 side of each evaporation port portion 8 longer than the width length of the introducing portion 28 in the lateral direction perpendicular to the relative movement direction of the substrate 4,
  • the introduction portion 28 may be arranged in the horizontally long diffusion portion 27. At this time, the evaporation material adheres to the heat shield portion 19, so that the evaporation port portion It is desirable not to dispose the heat shield 19 between the eight.
  • the inner angle R of the opening shape of the evaporation port 8 is large, the generation of evaporation particles from the corner portion is reduced and the evaporation rate is lowered. Therefore, the inner angle R of the opening shape of the evaporation port 8 is reduced. A smaller value is desirable.
  • the evaporation port 8 when the length ( ⁇ y) of the evaporation port 8 relative to the substrate 4 in the relative movement direction is 30 mm and the length ( ⁇ x) in the horizontal direction orthogonal to the substrate 4 is 2 mm, the evaporation port without the inner angle R 8 and that of the evaporation port portion having an inner angle R of 1 mm. Since the evaporation rate is approximately proportional to the opening area of the evaporation port 8, when compared with the opening area, the opening area is 60 mm 2 when the inner angle R is not present, and (56 + ⁇ ) mm 2 when the inner angle R is 1 mm. , About 1.4% evaporation rate decreases.
  • the gap G can be secured to 1 mm or more.
  • the gap G is 1 mm
  • the TS is 100 mm and the ⁇ x is 3 mm
  • the gap G is 1 mm
  • the TS is 100 mm and the ⁇ x is reduced to 0.6 mm
  • the gap G can be 5 mm.
  • the shadow SH can be reduced to 0.01 mm, and a higher-definition film forming pattern may be supported.
  • the substrate 4 and the vapor deposition mask 2 are separated from each other. Even if vapor deposition is performed, the evaporation rate can be increased while suppressing the shadow. However, the positional deviation of the film formation pattern becomes the sum of the positional deviations of the respective evaporation port portions 8, and the relative movement direction of the substrate 4 is increased. It is better to keep the number of evaporation ports 8 of the evaporation source 1 to be kept to a minimum.
  • FIG. 2 there is one evaporation port 8 disposed in the relative movement direction of the substrate 4, and the evaporation port 8 is long in the relative movement direction of the substrate 4.
  • the slit is narrow in the lateral direction perpendicular to this.
  • the film thickness ( ⁇ ) at the time of transport film formation is represented by vapor deposition rate ( ⁇ / s) / moving speed (mm / s) ⁇ deposition mask slit length (mm).
  • the lateral opening width ⁇ x of the evaporation port 8 is 1 mm
  • the length of the substrate 4 in the relative movement direction ⁇ y is 1 mm (FIG. 5A) and 60 mm (FIG. 5).
  • the case where the film was formed in (b)) was compared. It is assumed that the film thickness distribution evaporated from the evaporation port 8 and deposited on the substrate 4 is a distribution that approximates the cosine law cos ⁇ to the 20th power.
  • the film thickness after transport film formation is when ⁇ y is 1 mm ( In FIG. 5 (a)), it is about 83.3 mm.
  • the moving speed is about 0.21 mm / s.
  • the vapor deposition rate within the effective film formation range when ⁇ y is 60 mm is not 60 times that of 1 mm, and is ejected from the evaporation port portion 8 toward the end symmetrically from the center of ⁇ y. Since the number of evaporated particles scattered in the restriction opening 5 space is reduced as compared with the central portion, the evaporation rate is lowered. More specifically, the evaporation rate at which the evaporation particles ejected from the point c of the evaporation port 8 in FIG. 5A are deposited at the point a on the substrate 4 is the evaporation port in FIG.
  • the film thickness when ⁇ y is 60 mm is compared with the film thickness when ⁇ y is 60 times that of 1 mm, the film with ⁇ y of 60 mm is the same when the vapor deposition rate, the moving speed, and the length of the vapor deposition mask slit are the same.
  • the thickness is reduced by about 4.1%.
  • the mask openings 3 of the vapor deposition mask 2 of this embodiment are arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate 4.
  • the mask opening 3 is formed in a slit shape that is long in the relative movement direction or a plurality of openings are arranged in parallel in the relative movement direction, and the total opening length in the relative movement direction is longer than the lateral opening length. Yes.
  • the mask openings 3 in each row of the vapor deposition mask 2 may be slit-like openings that are long in the relative movement direction.
  • the mask openings 3 are slits that are long in the relative movement direction. Small openings such as holes or small holes may be scattered in this direction to ensure a wide total opening length (total opening area).
  • the opening slit or the total opening length of the vapor deposition mask 2 is set so as to be longer as the distance from the central portion is increased in the lateral direction, and the vapor deposition rate is decreased as the distance from the central portion is increased, but the film thickness of the vapor deposition film is constant. It is set as follows.
  • the dimensions of the evaporation port 8 are, for example, the evaporation port opening width ⁇ x is 1 mm, the evaporation port slit length ⁇ y is 60 mm, and the lateral film thickness distribution perpendicular to the relative movement direction of the substrate 4 is cos ⁇ . If the distribution approximates the 20th power, the film thickness distribution shown in FIG. 8 is obtained. When the incident angle of the evaporated particles on the vapor deposition mask 2 is increased, the influence of the above-described error is increased. Therefore, when the film is used for film formation up to a position where the film thickness is as thin as 80% of the center, ⁇ 30 to +30 in the X-axis direction.
  • a width of 60 mm is an effective film forming range for forming a film with one nozzle.
  • the evaporation mask opening length at ⁇ 30, +30, which is both ends of the effective film formation range is about 146 mm.
  • the mask opening length becomes symmetrical.
  • the film thickness correction plate 29 is disposed on the substrate 4 side of the vapor deposition mask 2, so that the vapor deposition mask 2. Even if it is necessary to further correct the film thickness after bonding to the mask holder 6, the film thickness of the deposited film can be corrected without replacing the deposition mask 2.
  • the mask opening 3 of the vapor deposition mask 2 is not formed into a slit that is longer in the direction of relative movement of the substrate 4 as it moves away from the left and right ends, but is formed into the same slit and an opening is formed in a predetermined range as shown in FIG.
  • the film thickness correction plate 29 may be used to correct the slit opening length shown in FIG.
  • the formation pitch in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film formation pattern deposited on the substrate 4 is set to The pitch is set narrower than the pitch of the film formation pattern by a difference corresponding to the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation port 8 and the vapor deposition mask 2.
  • the distance MPx from the mask position facing the evaporation port opening center of the evaporation source to the mask opening center is the center of the film forming pattern from the substrate position facing the evaporation port opening center.
  • the vapor deposition mask 2 depends on the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation port 8 and the vapor deposition mask 2.
  • the position of the vapor deposition film deposited on the substrate 4 through the mask opening 3 is shifted in the horizontal direction, but the opening pitch of the vapor deposition mask 2 should be set narrower than the film formation pattern in consideration of this deviation amount.
  • the vapor deposition mask opening width Mx is larger or smaller than the gap G between the substrate 4 and the vapor deposition mask 2 and evaporated. It becomes wide by the difference according to the size of the distance TS between the mouth portion 8 and the vapor deposition mask 2.
  • the mask opening width Mx is about 0.126 mm when G is 3 mm, and about 0.143 mm when G is 5 mm. It becomes wider than P.
  • a rib portion 24 extending in the relative movement direction of the substrate 4 is provided, and the deposition mask 2 provided in each restriction opening 5 is supported and bonded to the front end surface of the rib portion 24 on the substrate 4 side.
  • a mask mounting support surface 23 is provided.
  • the R pixel of the light emitting layer is vapor-deposited, other G and B pixel widths and the corresponding mask mounting support surface 23 can be provided. Since the gap G is separated, it can be secured widely.
  • the mask mounting support surface 23 in a configuration in which the substrate 4 and the vapor deposition mask 2 are in close contact is expressed by 2P + 3PP using the vapor deposition film interval PP and the vapor deposition pattern width P for RGB pixel vapor deposition.
  • the gap G causes a difference A between the extreme position of the vapor deposition pattern and the extreme position of the mask opening 3 of the vapor deposition mask 2 when viewed from the center of the substrate 4 facing the evaporation port 8.
  • A is represented by G (Px + P / 2 ⁇ x / 2) / (TS + G), and the mask mounting support surface 23 is 2A wider than the case where the substrate 4 and the vapor deposition mask 2 are in close contact with each other.
  • the mask mounting support surface 23 when the substrate 4 and the vapor deposition mask 2 are in close contact is 0. 35 mm.
  • the mask mounting support surface 23 has a gap G of 1 mm.
  • the gap G is about 0.64 mm and the gap G is about 5 mm, the thickness is about 1.79 mm, so that a sufficient area for spot welding can be secured by polymerizing the deposition mask 2.
  • a plurality of evaporation ports 8 are arranged in parallel for each restriction opening 5, and the evaporation rate is increased by overlapping evaporated particles from the plurality of evaporation ports 8 on the substrate 4. Can do.
  • the evaporated particles evaporated from the central evaporation port 8 pass through the mask opening 3 and the substrate 4.
  • Evaporated particles deposited on the substrate and evaporated from the adjacent evaporation port 8 pass through the adjacent mask opening 3 and are deposited at the same position on the substrate 4. Since a plurality of evaporation ports 8 are arranged side by side, the amount superposed on the substrate 4 increases and the deposition rate increases.
  • the vapor deposition rate is the same, but the opening of each evaporation port 8 is the same. It is good also as a structure which suppresses the shadow SH of a vapor deposition film further by making width
  • the interval between the evaporation ports 8 for the vapor deposition film to be superimposed on the substrate 4 is determined by the following equation (5).
  • PMx is 0.5 mm
  • G is 4 mm
  • TS is 200 mm
  • P ⁇ x is 25.5 mm.
  • one evaporated particle evaporated from the plurality of evaporation ports 8 is one. Since vapor deposition can be performed on the film formation pattern at equal intervals through the mask opening 3, the number of mask openings 3 for determining the film formation pattern can be reduced and the pitch of the mask openings 3 can be widened. The width of the part can be widened, the mechanical strength of the vapor deposition mask 2 can be increased, the mask can be prevented from being destroyed or adhered during cleaning, and the mask mounting support surface 23 can be secured widely. Can be performed more firmly.
  • an odd number (3) of evaporation ports 8 are disposed in the limiting opening 5 shown in FIG. 16 in an opposed state, and the number of film formation patterns in the limiting opening 5 is equal to the number of evaporation ports 8.
  • the interval between the mask openings 3 is halved and the film forming pattern interval is also halved. Therefore, a highly accurate film formation pattern can be deposited.
  • the temperature of the vapor deposition mask 2 is increased by increasing the surface area in contact with the vapor deposition mask 2 instead of increasing the number of media or heat pipes. You may make it hold
  • the interval between the evaporation ports 8 for the evaporation particles evaporated from the plurality of evaporation ports 8 to pass through the same mask opening 3 and deposit at a desired film formation pitch is determined by the following equation (5).
  • PMx is 0.5 mm
  • G is 4 mm
  • TS is 200 mm
  • P ⁇ x is 25.5 mm. If three evaporation ports 8 are provided, the mask opening pitch is tripled. PMx is 1.5 mm.
  • the film formation pattern shown in the second embodiment is applied to the substrate 4.
  • the mask mounting support surface is blocked by the mask opening B at the end. 23 can be enlarged.
  • a second vapor deposition mask 10 is disposed in close contact with the substrate 4 between the substrate 4 and the vapor deposition mask 2. Therefore, in this embodiment, the evaporation source 1, the mask holder 6 and the first vapor deposition mask 2 are configured to move relative to the second vapor deposition mask 10 and the substrate 4.
  • the vapor deposition mask 2 and the substrate 4 may be arranged in a separated state. In the relative movement between the vapor deposition mask 2 and the substrate 4 attached to the evaporation source 1 and the mask holder 6, which one of the relative movements is performed. May be.
  • the mask openings 11 of the second vapor deposition mask 10 are arranged to finally determine the film formation pattern, and the first vapor deposition mask 2 located on the evaporation source 1 side with respect to the second vapor deposition mask 10.
  • the width of the mask opening 3 is set to be the same as or wider than that of the second vapor deposition mask 10. Further, the formation interval of the mask openings 11 of the second vapor deposition mask 10 in the restriction opening 5 is formed wider than the formation interval of the mask openings 3 of the first vapor deposition mask 2.
  • the second deposition mask 10 is disposed in close contact with the substrate 4 so that the shadow SH due to the first deposition mask 2 does not occur.
  • the radiation heat from the evaporation source 1 and the amount of heat conducted by the evaporated particles are absorbed by the first vapor deposition mask 2 and the radiant heat emitted from the first vapor deposition mask 2 propagates to the second vapor deposition mask 10.
  • the amount of heat incident on the second vapor deposition mask 10 is greatly reduced, and the thermal expansion of the second vapor deposition mask 10 can be suppressed.
  • the mask holder 6 may be provided with a cooling mechanism so that the temperature of the first vapor deposition mask 2 is not further increased.
  • the first vapor deposition mask 2 prevents the heat from the evaporation source 1 from propagating to the second vapor deposition mask 10 and prevents the vapor deposition pattern incident on the second mask opening 11 from shifting.
  • the mask opening 3 is formed by etching. Since the second vapor deposition mask 10 is provided with the first vapor deposition mask 2 so that the incidence of heat is greatly suppressed, even if it is formed of nickel or the like having a large linear expansion coefficient, the second vapor deposition mask 10 does not thermally expand. As a result, a vapor deposition film having a film formation pattern finally determined is formed, so that an electroforming method capable of forming the mask opening 11 with high accuracy can be used.
  • a plurality of evaporation ports 8 are arranged in parallel for each restriction opening 5, and the evaporation particles from the plurality of evaporation ports 8 are overlapped on the substrate 4 to increase the deposition rate.
  • the gap G between the substrate 4 and the evaporation mask 2, the distance TS between the evaporation port 8 and the evaporation mask 2, the substrate due to the manufacturing and mounting accuracy, thermal expansion during heating of the evaporation source 1, and the like. 4
  • the evaporation particles from the plurality of evaporation ports 8 cannot be accurately superimposed on the substrate 4, and the film formation pattern spreads.
  • the film formation pattern of the second mask opening 11 is formed by arranging the second vapor deposition mask 10 in close contact with the substrate 4, a vapor deposition apparatus that can tolerate the above-described positional deviation. Become.
  • the present invention is not limited to the first to fourth embodiments, and the specific configuration of each component can be designed as appropriate.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110273133A (zh) * 2019-07-26 2019-09-24 西安拉姆达电子科技有限公司 一种专用于晶片镀膜的磁控溅射镀膜机
CN113463032A (zh) * 2016-07-05 2021-10-01 佳能特机株式会社 蒸镀装置及蒸发源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014203632A1 (ja) 2013-06-21 2014-12-24 シャープ株式会社 有機エレクトロルミネッセンス素子の製造方法及び有機エレクトロルミネッセンス表示装置
KR102373436B1 (ko) * 2015-03-30 2022-03-14 삼성디스플레이 주식회사 표시 장치, 표시 장치의 제조장치 및 표시 장치의 제조방법
KR101866956B1 (ko) * 2016-12-30 2018-06-14 주식회사 선익시스템 선형 증발원용 도가니 및 선형 증발원
JP6570561B2 (ja) * 2017-02-07 2019-09-04 キヤノン株式会社 蒸着装置及び蒸着源
JP6566977B2 (ja) * 2017-02-07 2019-08-28 キヤノン株式会社 蒸着装置及び蒸着源
US11659759B2 (en) 2021-01-06 2023-05-23 Applied Materials, Inc. Method of making high resolution OLED fabricated with overlapped masks

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07286272A (ja) * 1993-11-09 1995-10-31 General Vacuum Equip Ltd 真空ウェブ・コーテング方法及び装置
JP2004055198A (ja) * 2002-07-17 2004-02-19 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子を有するディスプレイ装置の製造装置及び製造方法
JP2010150662A (ja) * 2008-12-18 2010-07-08 Veeco Instruments Inc 直線状堆積供給源
JP2010270396A (ja) * 2009-05-22 2010-12-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置
JP2011047035A (ja) * 2009-08-25 2011-03-10 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
JP2004103268A (ja) * 2002-09-05 2004-04-02 Sanyo Electric Co Ltd 有機ｅｌ表示装置の製造方法
JP4156891B2 (ja) * 2002-09-20 2008-09-24 株式会社アルバック 薄膜形成装置
US20080131587A1 (en) 2006-11-30 2008-06-05 Boroson Michael L Depositing organic material onto an oled substrate
JP5042195B2 (ja) * 2008-10-29 2012-10-03 株式会社日立ハイテクノロジーズ 蒸着マスクの洗浄装置および洗浄方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07286272A (ja) * 1993-11-09 1995-10-31 General Vacuum Equip Ltd 真空ウェブ・コーテング方法及び装置
JP2004055198A (ja) * 2002-07-17 2004-02-19 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子を有するディスプレイ装置の製造装置及び製造方法
JP2010150662A (ja) * 2008-12-18 2010-07-08 Veeco Instruments Inc 直線状堆積供給源
JP2010270396A (ja) * 2009-05-22 2010-12-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置
JP2011047035A (ja) * 2009-08-25 2011-03-10 Samsung Mobile Display Co Ltd 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113463032A (zh) * 2016-07-05 2021-10-01 佳能特机株式会社 蒸镀装置及蒸发源
CN110273133A (zh) * 2019-07-26 2019-09-24 西安拉姆达电子科技有限公司 一种专用于晶片镀膜的磁控溅射镀膜机

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