JP5042195B2 - 蒸着マスクの洗浄装置および洗浄方法 - Google Patents
蒸着マスクの洗浄装置および洗浄方法 Download PDFInfo
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- JP5042195B2 JP5042195B2 JP2008278289A JP2008278289A JP5042195B2 JP 5042195 B2 JP5042195 B2 JP 5042195B2 JP 2008278289 A JP2008278289 A JP 2008278289A JP 2008278289 A JP2008278289 A JP 2008278289A JP 5042195 B2 JP5042195 B2 JP 5042195B2
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- 238000007740 vapor deposition Methods 0.000 claims description 181
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- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical class OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
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- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
パルスレーザー10がレーザー照射窓1から被洗浄物である蒸着マスク2に照射される。蒸着マスク2は繰り返し蒸着に使われたもので、洗浄が必要な状態である。なお、パルスレーザーはパルス幅に対してパルスの周期が非常に長いもので、蒸着マスク2に照射すると蒸着マスク2が振動を生じ、蒸着マスク2に付着した蒸着剤を剥離する作用を有する。
2 蒸着マスク
3 吸引ノズル
4 マスクの進行方向
5 吸引ブロワ
6 サイクロン
7 蒸着剤回収部
8 蒸着剤精製部
9 蒸着剤保管部
10 パルスレーザー
11 バルブA
12 バルブB
13 バルブC
14 バルブD
15 第1封止ガラス前処理部
16 第2封止ガラス前処理部
17 貼り合せ封止部
18 陽極膜蒸着部
19 正孔注入層蒸着部
20 正孔輸送層蒸着部
21 赤発光層蒸着部
22 電子輸送層蒸着部
23 第1基板前処理部
24 第2基板前処理部
25 電子注入層蒸着部
26 緑発光層蒸着部
27 蒸着マスク保管部
28 蒸着マスク洗浄部
29 蒸着剤回収ステージ
30 青発光層蒸着部
31 基板保管部
32 完成品排出部
33 バルブE
34 バルブF
35 バルブG
36 サイクロンB
37 蒸着剤回収部B
38 蒸着剤精製部B
39 蒸着剤保管部B
40 バルブH
41 バルブI
42 バルブJ
110 素子基板
111 第1下地膜
112 第2下地膜
113 半導体層
114 ゲート絶縁膜
115 ゲート電極
116 層間絶縁膜
117 SD配線
118 無機パッシベーション膜
119 有機パッシベーション膜
120 バンク
121 下部電極
122 有機EL層
123 上部電極
1221 電子注入層
1222 電子輸送層
1223 発光層
1224 ホール輸送層
1225 ホール注入層。
Claims (6)
- 蒸着剤が付着した蒸着マスクにパルスレーザを照射して、蒸着剤を蒸着マスクから分離する手段と、前記蒸着マスクから分離された蒸着剤を吸引する手段と、前記蒸着剤を空気と分離する分離手段と、前記分離手段によって分離した蒸着剤を回収する手段と、回収された蒸着剤を精製する手段と、回収された蒸着剤を保管する手段を有することを特徴とする蒸着マスク洗浄装置。
- 蒸着剤を吸引する手段は吸引ノズルとブロワであることを特徴とする請求項1に記載の有機EL素子の蒸着マスク洗浄装置。
- 前記蒸着剤を空気と分離する分離手段はサイクロンであることを特徴とする請求項1に記載の有機EL素子の蒸着マスク洗浄装置。
- 蒸着剤が付着した蒸着マスクを洗浄する蒸着マスク洗浄装置であって、
前記蒸着マスクにパルスレーザを照射して蒸着剤を蒸着マスクから分離する手段と、
前記蒸着マスクから吸引ブロワとサイクロンによって前記蒸着マスクに近接して配置された吸着ノズルを介して前記蒸着剤を吸引し、前記サイクロン内において、空気を吸引ブロワに吸引させ、蒸着剤は前記サイクロンの底部に堆積させる手段と、
前記サイクロンと前記ブロワの間には第1のバルブが存在し、
前記サイクロンの底に堆積した前記蒸着剤を蒸着剤回収部に移動させるための第2のバルブと、
前記蒸着剤回収部から、前記蒸着剤を蒸着剤精製部に移動させる第3のバルブと、
前記蒸着剤精製部から、前記蒸着剤を蒸着剤保管部に移動させる第4のバルブを有し、
前記サイクロンと前記蒸着剤回収部と、前記蒸着剤精製部と、前記蒸着剤保管部は直列に接続されていることを特徴とする蒸着マスク洗浄装置。 - 蒸着剤が付着した蒸着マスクを洗浄する蒸着マスク洗浄方法であって、
前記蒸着マスクにパルスレーザを照射して蒸着剤を蒸着マスクから分離し、
サイクロンと吸引ブロアとの間に配置した第1のノズルを開き、サイクロンと蒸着剤回収部の間に配置された第2のバルブを閉じ、
前記蒸着マスクから吸引ブロワとサイクロンによって前記蒸着マスクに近接して配置された吸着ノズルを介して前記蒸着剤を吸引し、前記サイクロン内において、空気を吸引ブロワに吸引させ、蒸着剤は前記サイクロンの底部に堆積させ、
前記第1のバルブを閉じて、前記第2のバルブを開くことによって、前記蒸着剤を前記蒸着剤回収部に回収することを特徴とする蒸着マスク洗浄方法。 - 前記蒸着剤回収部は蒸着剤精製部と第3のバルブを介して接続し、前記蒸着剤回収部に回収された蒸着剤を、前記第2のバルブを閉じ、前記第3のバルブを開くことによって前記蒸着剤精製部に前記蒸着剤を移動させることを特徴とする請求項5に記載の蒸着マスク洗浄方法。
Priority Applications (3)
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JP2008278289A JP5042195B2 (ja) | 2008-10-29 | 2008-10-29 | 蒸着マスクの洗浄装置および洗浄方法 |
KR1020090081238A KR101141837B1 (ko) | 2008-10-29 | 2009-08-31 | 증착 마스크의 세정 장치 및 세정 방법 |
US12/551,821 US8182610B2 (en) | 2008-10-29 | 2009-09-01 | Cleaning equipment and cleaning method of deposition mask |
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JP2008278289A JP5042195B2 (ja) | 2008-10-29 | 2008-10-29 | 蒸着マスクの洗浄装置および洗浄方法 |
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JP2010106304A JP2010106304A (ja) | 2010-05-13 |
JP5042195B2 true JP5042195B2 (ja) | 2012-10-03 |
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US (1) | US8182610B2 (ja) |
JP (1) | JP5042195B2 (ja) |
KR (1) | KR101141837B1 (ja) |
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KR101229041B1 (ko) * | 2011-01-11 | 2013-02-04 | 엘아이지에이디피 주식회사 | 유기발광소자 제조용 증착장비의 클리닝 장치 및 방법 |
JP5883230B2 (ja) * | 2011-03-14 | 2016-03-09 | キヤノントッキ株式会社 | 蒸着装置並びに蒸着方法 |
JP5877955B2 (ja) * | 2011-03-18 | 2016-03-08 | キヤノントッキ株式会社 | 蒸着装置並びに蒸着方法 |
US10375901B2 (en) | 2014-12-09 | 2019-08-13 | Mtd Products Inc | Blower/vacuum |
KR102278662B1 (ko) * | 2017-05-30 | 2021-07-20 | 삼성디스플레이 주식회사 | 마스크 세정장치 |
CN108598293B (zh) * | 2018-04-24 | 2021-11-05 | 京东方科技集团股份有限公司 | 一种掩膜板及其制作方法 |
CN108611599B (zh) * | 2018-08-01 | 2020-08-21 | 京东方科技集团股份有限公司 | 清洗掩膜版的方法以及装置 |
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JPH1133442A (ja) * | 1997-07-18 | 1999-02-09 | Nippon Paint Co Ltd | 静電粉体塗装方法及び静電粉体塗装装置 |
JP3839674B2 (ja) * | 2001-02-21 | 2006-11-01 | 株式会社アルバック | 有機蒸着装置及び有機薄膜製造方法 |
JP4252295B2 (ja) * | 2002-12-09 | 2009-04-08 | 東レエンジニアリング株式会社 | メタルマスクの洗浄方法及び装置 |
KR100626037B1 (ko) | 2004-11-18 | 2006-09-20 | 삼성에스디아이 주식회사 | 마스크 세정방법 |
JP4236632B2 (ja) | 2004-12-14 | 2009-03-11 | 財団法人レーザー技術総合研究所 | 蒸着マスクのクリーニング方法、蒸着マスククリーニング装置、有機el素子の製造方法、および、有機el素子の製造装置 |
JP2010236088A (ja) * | 2009-03-09 | 2010-10-21 | Hitachi High-Technologies Corp | マスク部材のクリーニング装置及びクリーニング方法並びに有機elディスプレイ |
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2008
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KR101141837B1 (ko) | 2012-05-07 |
KR20100047792A (ko) | 2010-05-10 |
US20100101601A1 (en) | 2010-04-29 |
US8182610B2 (en) | 2012-05-22 |
JP2010106304A (ja) | 2010-05-13 |
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