201250025 六、發明說明： 【發明所屬之技術領域】 本發明係關於使藉由蒸鍍遮罩所致之成膜圖案的蒸鍍 膜形成在基板上的蒸鍍裝置及蒸鍍方法。 【先前技術】 近年來，使用有機電激發光元件的有機EL顯示裝置 作爲替代CRT或LCD的顯示裝置而備受囑目。 該有機EL顯示裝置係在基板層積形成電極層與複數 有機發光層，另外被覆形成密封層的構成，爲自發光，與 LCD相比，高速響應性優異，可實現高視野角及高對比。 如上所示之有機EL裝置一般係藉由真空蒸鍍法來製 造，在真空腔室內使基板與蒸鍍遮罩對位密接來進行蒸鍍 ，藉由該蒸鍍遮罩，將所希望的成膜圖案的蒸鍍膜形成在 基板。 此外，在如上所示之有機EL裝置之製造中，伴隨著 基板的大型化，用以獲得所希望的成膜圖案的蒸鍍遮罩亦 大型化，但是爲了該大型化，必須在對蒸鍍遮罩施加張力 的狀態下熔接固定在遮罩框架來進行製作，因此大型的蒸 鍍遮罩的製造並不容易，而且若該張力不夠充分時，伴隨 著遮罩的大型化，會在遮罩中心發生變形，而使蒸鍍遮罩 與基板的密接度降低、或者爲了考慮該等情形而使遮罩框 架變得大型，使得壁厚化或重量的增大更爲顯著。 如上所示，伴隨著基板尺寸的大型化，圖求蒸鍍遮罩 -5- 201250025 的大型化，但是髙精細的遮罩的大型化困難，而且即使可 製作，亦會因前述變形的問題而在實用上發生各種問題。 此外，例如日本特表20 1 0-5 1 1 784號等所示，亦有一 種將基板與蒸鍍遮罩分離配設，藉由蒸發源及使具有指向 性的蒸發粒子發生的開口部，使有機發光層高精度地成膜 的方法，但是前述蒸發源及使指向性發生的前述開口部形 成一體構造，形成爲爲了由開口部使蒸發粒子發生而將前 述一體構造加熱爲高溫的構成，因此在蒸鍍遮罩接受來自 蒸發源的輻射熱，無法防止因蒸鍍遮罩的熱膨脹而造成成 膜圖案的位置精度降低。 此外，藉由形成爲使基板與蒸鍍遮罩分離配設而作相 對移動的構成，即使爲較小的蒸鍍遮罩，亦可以大範園地 使所希望的成膜圖案蒸鍍在大型基板，但是由於對蒸發粒 子賦予指向性，因此會有必須減小蒸發源開口部的直徑， 而無法提高蒸發率的問題點。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特表2010-511784號公報 【發明內容】 (發明所欲解決之課題） 本發明係解決如上所示之各種問題，目的在提供一種 蒸鍍裝置及蒸鍍方法，其係伴隨著基板的大型化，無須使 蒸鍍遮罩同等地大型化，即使爲比基板更爲小型的蒸鍍遮 -6 - 201250025 罩，亦使基板在分離狀態下作相對移動， 藉由蒸鍍遮罩所致之成膜圖案的蒸鍍膜進 持在分離狀態下作相對移動，藉此不僅構 率佳且快速地進行蒸鍍，此外，形成爲即 態下，亦由於將限制用開口部設在蒸發源 ，限制蒸發粒子的飛散方向而使來自鄰接 發口部的蒸發粒子不會通過而防止成膜圖 具有設有該限制用開口部的飛散限制部的 蒸鍍遮罩的構成，該遮罩保持具係不僅作 亦可抑制來自蒸發源的輻射熱的入射，前 口部係形成爲朝則述基板的相對移動方向 正交的橫向呈寬幅狹窄的開縫狀，藉此在 鍍遮罩在分離狀態下作相對移動的構成的 精度且高速率的蒸鍍。 (解決課題之手段） 參照所附圖示，說明本發明之要旨。 —種蒸鍍裝置，其係構成爲：將由蒸 成膜材料，透過蒸鍍遮罩2的遮罩開口部 1上，以藉由該蒸鍍遮罩2所決定的成膜 形成在基板4上的蒸鍍裝置，其特徵爲： 與配設成與該蒸發源1相對向狀態的前述 設遮罩保持具6，該遮罩保持具6具有： 蒸發源1所蒸發的前述成膜材料的蒸發粒 而可大範圍地將 行蒸鍍，而且保 造簡易，且可效 使在保持分離狀 與蒸鍍遮罩之間 或分離位置的蒸 案重疊，並且在 遮罩保持具附設 爲飛散限制部， 述蒸發源的蒸發 爲長形且與此呈 作爲使基板與蒸 同時，可進行高 發源1所蒸發的 3而堆積在基板 圖案的蒸鍍膜被 在前述蒸發源1 基板4之間，配 設有限制由前述 子的飛散方向的 201250025 限制用開口部的飛散限制部5，使與前述基板4呈分離狀 態所配設的前述蒸鍍遮罩2接合附設在該遮罩保持具6, 相對於附設有前述蒸鍍遮罩2的前述遮罩保持具6及前述 蒸發源1’在保持與前述蒸鍍遮罩2的分離狀態下以相對 移動自如的方式構成前述基板4，前述蒸發源1的蒸發口 部8係形成爲朝前述基板4的相對移動方向爲長形且與此 呈正交的橫向爲寬幅狹窄的開縫狀。 此外，如申請專利範圍第1項之蒸鍍裝置，其中，構 成爲：在設爲減壓環境氣體的蒸鍍室7內，配設收納有前 述成膜材料的前述蒸發源1、及設有供由該蒸發源1的前 述蒸發口部8所蒸發的前述成膜材料的蒸發粒子通過的前 述遮罩開口部3的前述蒸鍍遮罩2，並排設置複數個前述 蒸發口部8，在與前述蒸鍍遮罩2呈分離狀態進行對位的 前述基板4，由前述複數蒸發口部8飛散的蒸發粒子通過 前述遮罩開口部3而堆積，藉由蒸鍍遮罩2所決定的成膜 圖案的蒸鍍膜被形成在前述基板4，且構成爲：在該蒸發 源1與配設成與該蒸發源1相對向狀態的前述基板4之間 ’配設前述遮罩保持具6，該前述遮罩保持具6構成設有 使得來自鄰接或分離位置的前述蒸發口部8的蒸發粒子不 會通過的前述限制用開口部5的飛散限制部，在該遮罩保 持具6附設配設成與前述基板4呈分離狀態的前述蒸鍍遮 罩2，使前述基板4，相對於附設有前述蒸鍍遮罩2的前 述遮罩保持具6及對前述蒸發源1，在保持與該蒸鍍遮罩 2的分離狀態下作相對移動，以該相對移動方向，使前述 -8- 201250025 蒸鍍遮罩2的前述成膜圖案的蒸鍍膜連續而即使爲小於前 述基板4的前述蒸鍵遮罩2，亦大範圍地形成蒸鍍膜。 此外’如申請專利範圍第1項之蒸鏟裝置，其中，構 成爲：以相對前述基板4的相對移動方向呈正交的橫向並 排設置複數個前述蒸發源1的前述蒸發口部8，並且沿著 前述橫向並排設置複數個設在前述遮罩保持具6的前述飛 散限制部的前述限制用開口部5，由前述各蒸發口部8所 蒸發的蒸發粒子，：僅通過相對向的前述限制用開口部5， 另外透過與該限制用開口部5相對向的前述蒸鍍遮罩2的 前述遮罩開口部3,而在前述基板4上形成前述成膜圖案 的蒸鍍膜’來自相鄰或分離位置的前述蒸發口部8的蒸發 粒子係被附著捕捉，藉由前述限制用開口部5來限制前述 蒸發粒子的飛散方向。 此外’如申請專利範圍第1項之蒸鍍裝置，其中，在 前述遮罩保持具6的前述基板4側的端部附設前述蒸鍍遮 罩2。 此外’如申請專利範圍第4項之蒸鍍裝置，其中，對 前述蒸鍍遮罩2賦予張力而舖設在前述遮罩保持具6的前 述基板4側的端部。 此外’如申請專利範圍第5項之蒸鍍裝置，其中，前 述遮罩保持具6係以前述基板4的相對移動方向賦予張力 來舖設前述蒸鍍遮罩2。 此外’如申請專利範圍第1項之蒸鍍裝置，其中，前 述蒸鍍遮罩2係形成爲以與前述基板4的相對移動方向呈 201250025 正交的橫向分割成複數枚的構成，將該分割後的蒸鍍遮罩 2附設成以前述橫向並排設置在前述遮罩保持具6的狀態 〇 此外，如申請專利範圍第1項之蒸鍍裝置，其中，以 與前述基板4的相對移動方向呈正交的橫向並排設置複數 前述蒸發源1的前述蒸發口部8,按該一或複數的每個蒸 發口部，以分別在對向狀態下覆蓋具有設有前述限制用開 口部5的前述飛散限制部的前述遮罩保持具6的各限制用 開口部5的方式，將前述蒸鍍遮罩2附設在遮罩保持具6 的前述基板4側的端部。 此外，如申請專利範圍第1項之蒸鍍裝置，其中，前 述遮罩保持具6係朝前述基板4的相對移動方向延伸存在 ，爲了防止在將前述蒸鍍遮罩2舖設於遮罩保持具6時因 被賦予至蒸鍍遮罩2的張力所造成的遮罩保持具6的變形 ，形成爲將使舖設方向的遮罩保持具6的剛性提升的肋部 24設在前述限制用開口部5間的構成。 此外，如申請專利範圍第9項之蒸鍍裝置，其中，在 前述遮罩保持具6的前述限制用開口部5間，在朝前述基 板4的相對移動方向延伸存在的前述肋部24的前述基板4 側前端面，設置支承設在前述各限制用開口部5的前述蒸 鍍遮罩2所接合的遮罩安裝支承面23。 此外，如申請專利範圍第1項之蒸鍍裝置，其中，前 述遮罩保持具6係將前述限制用開口部5的形狀，形成爲 前述蒸發源1側的開口面積小於前述基板4側的開口面積 -10- 201250025 的形狀。 此外’如申請專利範圍第1項之蒸鍍裝置，其中，形 成爲前述基板4與前述蒸鍍遮罩2在分離狀態下進行蒸鍍 ，藉由該蒸鍍遮罩2，在基板4形成成膜圖案的蒸鍍膜時 ’該蒸鍍膜的側端傾斜部分亦即陰影S Η，係若將前述基 板4與前述蒸鍍遮罩2的間隙設爲g，前述蒸發口部8的 前述橫向的開口寬幅設爲Φχ，該蒸發口部8與前述蒸鍍 遮罩2的距離設爲TS時，以下述式（1)表示，以該陰影 SH不會到達與鄰接蒸鍍膜的間隔ΡΡ的方式，將前述間隙 G設定爲較大’將前述蒸發口部8的前述開口寬幅φ5{設 定爲較小的構成。 〔數1〕 SH二 φ X XG/T S < Ρ Ρ…⑴ 此外，如申請專利範圍第1項之蒸鍍裝置，其中，前 述蒸發源1係由：將前述蒸發材料加熱的蒸發粒子發生部 26;由該蒸發粒子發生部26所發生的前述蒸發粒子擴散 而將壓力均一化的橫長擴散部27;及以與前述基板4的相 對移動方向呈正交的橫向並排設置複數個在前述橫長擴散 部27的前述蒸發口部8所構成，將前述蒸發源1以與前 述基板4的相對移動方向呈正交的橫向並排設置一個或複 數。 此外，如申請專利範圍第1項之蒸鑛裝置，其中’在 前述橫長擴散部27的周圍或前述蒸發口部8的周圍的至 少一者配設有將前述蒸發源1的熱遮斷的熱遮斷部i9。 -11 - 201250025 此外’如申請專利範圍第13項之蒸鍍裝置，其中， 將在前述橫長擴散部27所擴散的蒸發粒子由前述蒸發口 部8被噴出時具有指向性而飛散的導入部28，配設在前述 橫長擴散部2 7 » 此外’如申請專利範圍第15項之蒸鍍裝置，其中， 將前述複數蒸發口部8設在前述導入部28的前述基板4 側的前端面，形成爲使該導入部28朝向前述基板4側的 導入長’比與前述基板4的相對移動方向呈正交的橫向的 前述導入部28的寬幅長度爲更長的構成。 此外’如申請專利範圍第15項之蒸鍍裝置，其中， 前述導入部28係由前述橫長擴散部27朝向前述基板4側 突出來作配設。 此外’如申請專利範圍第1項之蒸鍍裝置，其中，前 述蒸鍍遮罩2的前述遮罩開口部3係形成爲以與前述基板 4的前述相對移動方向呈正交的橫向並排設置複數個的構 成’該各遮罩開口部3係形成爲朝前述相對移動方向爲長 形的開縫狀或將開口部朝前述相對移動方向並排設置複數 個’將該相對移動方向的總開口長與前述限制用開口部5 的中央部相比’以離前述橫向愈遠則愈長的方式進行設定 〇 此外’如申請專利範圍第1項之蒸鍍裝置，其中，在 前述蒸鍍遮罩2的前述基板4側，配設有閉塞前述遮罩開 口部3的一部分來設定前述各遮罩開口部3的開口範圍的 膜厚補正板29。 -12- 201250025 如申請專利範圍第1項之蒸鍍裝置，其中，以決定被 蒸鍍在前述基板4的成膜圖案的前述蒸鍍遮罩2的遮罩開 口部3之與前述基板4的相對移動方向呈正交的橫向中的 形成間隔Mpx，係若將前述基板4與前述蒸鍍遮罩2的間 隙設爲G、前述蒸鍍遮罩2與前述蒸發口部8的距離設爲 TS、前述成膜圖案之與基板4的相對移動方向呈正交的橫 向中的形成間隔設爲Ρχ時，以下述式（2 )表示，設定爲 比成膜圖案形成間隔Ρχ更爲狹窄，前述蒸鍍遮罩2的遮 罩開口部3之與前述基板4的相對移動方向呈正交的橫向 中的開口尺寸Μχ，係若將前述基板4與前述蒸鍍遮罩2 的間隙設爲G、前述蒸鍍遮罩2與前述蒸發口部8的距離 設爲TS、前述蒸鍍膜的成膜圖案中的成膜寬幅設爲ρ時 ’以下述式（3)表示，設定爲比前述蒸鍍膜的成膜圖案 寬幅Ρ更爲寬廣。 〔數2〕 Μ Ρ X = Ρ X { α / ( 1 + a )} a = T S / G …（2) 〔數3〕 Μχ = (φ x + ap)/(l + a)Q!=TS/G…（3) 此外，如申請專利範圍第1項之蒸鍍裝置，其中，具 備有將附設有前述蒸鍍遮罩2的前述遮罩保持具6,可與 蒸鍍室7往返自如地移動的交換室16。 此外’如申請專利範圍第21項之蒸鍍裝置’其中’ 在前述交換室16內具備有洗淨機構，其係將附著在前述 遮罩保持具6、或附設在遮罩保持具6的前述蒸鍍遮罩2 -13- 201250025 的至少一者的成膜材料進行洗淨。 此外，如申請專利範圍第21項之蒸鍍裝置，其中， 在前述交換室16內具備有材料回收機構，其將附著在前 述遮罩保持具6、或附設在遮罩保持具6的前述蒸鍍遮罩 2的至少一者的成膜材料進行回收。 此外，如申請專利範圍第1項之蒸鍍裝置，其中，以 與前述基板4的相對移動方向呈正交的橫向並排設置複數 個配設成與該前述限制用開口部5相對向狀態的前述蒸發 源1的前述蒸發口部，將該複數並排設置的蒸發口部8的 間隔，考慮到前述基板4與前述蒸鍍遮罩2的間隙G、及 前述蒸發口部8與前述蒸鍍遮罩2的距離TS、及前述蒸 鍍遮罩2的前述遮罩開口部3的間隔來作設定，藉此使通 過前述遮罩開口部3之由前述蒸發口部3所蒸發的蒸發粒 子、及通過鄰接的前述遮罩開口部3之由鄰接的前述蒸發 口部8所蒸發的蒸發粒子，在前述基板4上相重疊。 此外’如申請專利範圍第1項之蒸鍍裝置，其中，以 與前述基板4的相對移動方向呈正交的橫向並排設置複數 個配設成與該前述限制用開口部5相對向狀態的前述蒸發 源1的前述蒸發口部，將該複數並排設置的蒸發口部8的 間隔’考慮到前述基板4與前述蒸鍍遮罩2的間隙G、及 前述蒸發口部8與前述蒸鍍遮罩2的距離TS、及前述蒸 鍍遮罩2的前述遮罩開口部3的間隔來作設定，前述限制 用開口部5內之與基板4的相對移動方向呈正交的橫向的 遮罩開口部3係按照與同一限制用開口部5相對向狀態下 -14- 201250025 所被配設的前述蒸發口部8的數量’以少於與前述基板4 的相對移動方向呈正交的橫向的成膜圖案數且均等的間隔 來構成。 此外，如申請專利範圍第1項之蒸鍍裝置’其中’將 被附設在前述遮罩保持具6的前述蒸鑛遮罩2設爲第一蒸 鍍遮罩2，在前述基板4與前述第一蒸鍍遮罩2之間配設 第二蒸鍍遮罩10。 此外，如申請專利範圍第26項之蒸鍍裝置’其中， 被配設在前述限制用開口部5內之與前述基板4的相對移 動方向呈正交的橫向的前述第二蒸鍍遮罩的遮罩開口 部11的數量，係與被配設在比該第二蒸鍍遮罩更接近 前述蒸發源1側的同一前述限制用開口部5內之與基板4 的相對移動方向呈正交的橫向的前述第一蒸鍍遮罩2的前 述遮罩開口部3的數量相同，該各自的蒸鍍遮罩2、10的 遮罩開口部3、11係形成爲對應於與前述基板4的距離的 不同而異的形成間隔，第二蒸鍍遮罩10的遮罩開口部u 的遮罩開口寬幅與第一蒸鍍遮罩2相比，設爲相同或寬幅 狹窄。 此外’如申請專利範圍第26項之蒸鍍裝置，其中， 前述第二蒸鍍遮罩1 〇係由線膨脹係數大於由此位於前述 蒸發源1側的第一前述蒸鍍遮罩2的材料所形成。 此外’如申請專利範圍第26項之蒸鍍裝置，其中， 前述第二蒸鍍遮罩10係以電鑄來形成。 此外’如申請專利範圍第26項之蒸鍍裝置，其中， -15- 201250025 被配設在前述限制用開口部5內之與前述基 動方向呈正交的橫向的前述第二蒸鍍遮罩i 開口部11的數量，比被配設在同一前述限 內之與前述基板4的相對移動方向呈正交的 述蒸鍍遮罩2的遮罩開口部3的數量，按照 前述限制用開口部5內的前述蒸發口部8的 較多。 此外’如申請專利範圍第1項之蒸鍍裝 前述成膜材料形成爲有機材料》 此外’爲一種蒸鍍方法，其特徵爲：使 範圍第1項至第31項中任一項之蒸鍍裝置， 上形成藉由前述蒸鍍遮罩2所決定的成膜圖； (發明之效果） 本發明係如上所述所構成，因此伴隨著 ，無須使蒸鍍遮罩同等地大型化，即使爲比 的蒸鍍遮罩，亦使基板在分離狀態下作相對 範圍地將藉由蒸鍍遮罩所致之成膜圖案的蒸 ，而且保持在分離狀態下作相對.移動，藉此 ，且可效率佳且快速地進行蒸鍍，此外，形 持分離狀態下，亦由於將限制用開口部設在 遮罩之間，限制蒸發粒子的飛散方向而使來 位置的蒸發口部的蒸發粒子不會通過而防止 ，並且使蒸鍍遮罩接合而附設在具有設有該 板4的相對移 0的前述遮罩 制用開口部5 橫向的第一前 被配設在同一 數量而形成爲 置，其中，將 用如申請專利 在前述基板4 g的蒸鍍膜。 基板的大型化 基板更爲小型 移動，而可大 鍍膜進行蒸鍍 不僅構造簡易 成爲即使在保 蒸發源與蒸鍍 自鄰接或分離 成膜圖案重疊 限制用開口部 -16- 201250025 的飛散限制部的遮罩保持具的構成，成爲在作爲使基板與 蒸鍍遮罩在分離狀1態下作相對移動的構成的同時，可進行 高精度的蒸鍍，藉由縮窄蒸發源的蒸發口部的開口寬幅， 可更加抑制（亦依:基板與蒸鍍遮罩之間隙的大小、蒸發源 與蒸鍍遮罩的距離而改變的）成膜圖案的陰影（蒸鍍膜的 側端傾斜部分的突出量），而且藉由朝相對移動方向加長 蒸發口部的開口長，可提高蒸發率的蒸鎪裝置及蒸鍍方法 0 尤其在製造有機EL元件時，可對應基板大型化，亦 可精度佳地進行有機發光層的蒸鑛，亦可防止因遮罩接觸 而造成基板、蒸鍍遮罩、蒸鍍膜的損傷，藉由小於基板的 蒸鍍遮罩，成爲可實現更高精度的蒸鍍的有機EL元件製 造用的蒸鍍裝置及蒸鍍方法。 此外，在如申請專利範圍第2項之發明中，可更加良 好地發揮本發明之作用效果，成爲實用性更爲優異的蒸鍍 裝置。 此外，在如申請專利範圍第3項之發明中，以與基板 的相對移動方向呈正交的橫向並排設置複數前述蒸發口部 與前述限制用開口部，藉此成爲以不會通過相鄰位置的蒸 發粒子而防止成膜圖案重疊的構成，即可蒸鍍在大面積基 板的優異蒸鍍裝置。 此外，在如申請專利範圍第4、5項之發明中，由於 將蒸鑛遮罩在離蒸發源爲最遠的基板側的端部附設在遮罩 保持具，因此可抑制來自蒸發源的輻射熱的入射，此外， -17- 201250025 對蒸鍍遮罩賦予熱應力以上的張力，藉此被安定地維持° 此外，在如申請專利範圍第6項之發明中’由於對蒸 鍍遮罩以基板相對移動方向賦予張力，因此蒸鍍遮罩發生 撓曲的情形會消失，因撓曲所產生的成膜誤差會消失。 此外，在如申請專利範圍第7項之發明中’即使爲分 割成複數枚的較小蒸鍍遮罩，亦可成膜在大型基板，因此 可輕易作成蒸鍍遮罩。 此外，在如申請專利範圍第8項之發明中，可以根據 每個各蒸發口部的膜厚分布特性，在每個該蒸鍍領域達成 均一化的方式，構成爲並排設置個別設定有遮罩開口部的 蒸鍍遮罩、或可個別更換該等蒸鍍遮罩等，實用性更爲優 異。 此外，在如申請專利範圍第9、10項之發明中，藉由 朝基板的相對移動方向延伸存在而設的肋部，可防止因蒸 鍍遮罩的張力而造成遮罩保持具的變形，並且可維持蒸鍍 遮罩的張力，而且因設置遮罩安裝支承面，可強固地進行 蒸鍍遮罩對遮罩保持具的支承/接合。 此外，在如申請專利範圍第11項之發明中，藉由將 遮罩保持具的限制用開口部的形狀，形成爲蒸發源側的開 口面積小於基板側的開口面積的形狀，可在限制用開口部 的蒸發源側捕捉較多的由蒸發源所蒸發的成膜材料的蒸發 粒子，可減低附著在限制用開口部側面的成膜材料，而輕 易進行交換遮罩保持具後所附著的成膜材料的剝離/回收 18 - 201250025 此外，在如申請專利範圍箄12項之發明中，藉由縮 窄蒸發口部的開口寬幅，例如將RGB發光層進行成膜時 ，可防止發生到達鄰接蒸鍍圖案（鄰接像素）程度的陰影 ，而且如上所示藉由縮窄蒸發口部的開口寬幅，可取得較 大的基板與蒸鍍遮罩的間隙，或取得較寬的前述限制用開 口部間的遮罩安裝支承面，可在蒸鍍遮罩本身設置溫度控 制機構等，成爲優異的蒸鑛裝置。 此外，在如申請專利範圍第1 3項之發明中，在蒸發 源設置橫長擴散部，且在此並排設置複數蒸發口部，藉此 達成在並排設置的複數蒸發口部間的壓力均一化。此外， 亦可構成爲在蒸鍍於大型基板時，以擴散室的壓力成爲更 爲均一的方式，以與前述基板的相對方向呈正交的橫向並 排設置複數具有小擴散室的蒸發源。 此外，在如申請專利範圍第14項之發明中，在蒸發 源的周圍配設遮斷來自蒸發源的輻射熱之例如冷卻構件等 熱遮斷部（作爲設在蒸發源的溫度控制部來發揮功能）， 可抑制蒸鍍遮罩的溫度上升。 此外，在如申請專利範圍第1 5、16項之發明中，蒸 發粒子的指向性被提高，若與指向性低的蒸發粒子相比較 ，由一蒸發口部所噴出的蒸發粒子的成膜所利用的材料量 爲相同時，成膜有效範圍內的蒸發粒子的飛散角度會全體 變小，因此蒸發粒子入射至蒸鍍遮罩開口部的入射角亦會 全體變小，可減小相對於基板與蒸鍍遮罩之間隙的變動的 成膜圖案位置的變化量。 -19- 201250025 此外，在如申請專利範圍第1 7項之發明中，藉由由 橫長擴散部朝向基板側使導入部突出來作配設，可將熱遮 斷部配設在比蒸發口部更接近蒸發源側，即使在蒸發口部 間配設熱遮斷部，亦在熱遮斷部不會附著蒸發粒子，成爲 材料使用效率及保養性高的蒸鍍裝置。 此外，在如申請專利範圍第1 8項之發明中，藉由基 板的相對移動方向形成藉由蒸鍍遮罩的遮罩開口部的橫向 配列所決定的成膜圖案的蒸鍍膜，但是該蒸鍍遮罩的遮罩 開口部係將朝向基板的相對移動方向爲長形的總開口長， 設定成離限制用開口部的中央部（例如與蒸發口部相對向 的位置）朝橫向愈遠則愈長，因此以橫向愈遠，平均單位 立體角的蒸鍍率會愈低，但是對應此，開口長會變長，藉 此可使膜厚爲均一。 此外，在如申請專利範圍第19項之發明中，亦可在 將蒸鍍遮罩接合在遮罩保持具後，必須進行膜厚補正時， 藉由在基板側配設補正板，不用替換蒸鍍遮罩，即可使膜 厚爲均一，而且從一開始即以基板的相對移動方向使用同 一開縫長的蒸鍍遮罩，以補正板來調整膜厚。 此外，在如申請專利範圍第20項之發明中，決定被 蒸鍍在基板的成膜圖案的蒸鍍遮罩的遮罩開口部之與基板 的相對移動方向呈正交的橫向中的形成間隔係以基板與蒸 鍍遮罩的間隙、蒸鍍遮罩與蒸發口部的距離、及蒸鍍膜之 與基板的相對移動方向呈正交的橫向的成膜圖案形成間隔 來決定，設定爲比成膜圖案形成間隔更爲狹窄，蒸鍍遮罩 -20- 201250025 的遮罩開口部之與基板的相對移動方向呈正交的橫向中的 開口尺寸（遮罩開口寬幅）係由基板與蒸鍍遮罩的間隙、 蒸鍍遮罩與蒸發口部的距離、及前述蒸鍍膜的成膜圖案寬 幅來決定，設定爲比前述蒸鍍膜的成膜圖案寬幅更爲寬廣 ，藉此使基板與蒸鍍遮罩分離，即使在該等之間存在間隙 ，亦使成膜圖案的位置偏移、成膜圖案的寬幅偏移的情形 消失，可高精度形成成膜圖案的形成精度。 此外，在如申請專利範圍第21項之發明中，附設有 蒸鍍遮罩的遮罩保持具具備有與蒸鍍室往返自如的交換室 ，因此輕易進行遮罩保持具的搬出入，伴隨遮罩保持具的 替換的成膜工程的停止時間會變短，蒸鍍裝置的運轉率會 提升。 此外，在如申請專利範圍第22項之發明中，在交換 室具備有洗淨機構，藉此可將附著在遮罩保持具或蒸鍍遮 罩的成膜材料在蒸鍍裝置內洗淨，可輕易地再利用遮罩保 持具或蒸鍍遮罩。 此外，在如申請專利範圍第23項之發明中，在交換 室具備有材料回收機構，可回收材料而再利用，例如另外 如申請專利範圍第11項之發明般，遮罩保持具的肋部的 形狀係加大蒸發源側，藉此使材料附著在該遮罩保持具的 蒸發源側端部而使剝離/回收更爲簡單。 此外，在如申請專利範圍第24項之發明中，來自並 排設置複數的蒸發口部的蒸發粒子在基板上相重疊，因此 蒸鍍率變高，成爲生產性高的蒸鍍裝置。 -21 - 201250025 此外，在如申請專利範園第25項之發明中，並排設 置複數與限制用開口部呈對向狀態所配設的蒸發口部，藉 此由複數蒸發口部所蒸發的蒸發粒子係可通過一個遮罩開 口來進行蒸鍍，因此可減少決定成膜圖案的遮罩開口部數 ，而加寬遮罩開口部的形成間隔，因此蒸鍍遮罩的機械強 度增加，可防止洗淨時的遮罩破壞或黏合，而且可確保較 寬的遮罩安裝支承面，因此蒸鍍遮罩與遮罩保持具的接合 更加強固地進行，另外以溫度控制機構而言，將設在蒸鍍 遮罩的冷卻媒體路或熱管的設置面積取得較大，可防止因 來自蒸發源的輻射熱所造成的蒸鍍遮罩的溫度上升。 此外，在如申請專利範圍第26項之發明中，藉由設 置第二蒸鍍遮罩，以第一蒸鍍遮罩來抑制來自蒸發源的輻 射熱的入射，此外可以第二蒸鎪遮罩的開口圖案進行成膜 ，因此可一面抑制第二蒸鍍遮罩的溫度上升，一面進行更 加高精度的蒸鍍。 此外，在如申請專利範圍第27項之發明中，成爲可 更加確實地防止陰影而可進行高精度的蒸鍍的蒸鍍裝置。 此外，在如申請專利範圍第2 8項之發明中，藉由蒸 鍍遮罩、及具有設有與此相接合的限制用開口部的飛散限 制部的遮罩保持具、及視情況而設在此的溫度控制機構’ 來抑制蒸鍍遮罩的溫度上升，而可將溫度保持爲一定’因 此設在該蒸鍍遮罩與基板之間的第二蒸鍍遮罩係更加不易 溫度上升，因此可以線膨脹係數大的材料來形成。 此外，在如申請專利範圍第29項之發明中，第二遮 -22- 201250025 罩係以電鑄來形成時，可形成高精度的遮罩開口部，藉此 成爲可成膜精度更高的圖案的蒸鍍裝置。 此外，在如申請專利範圍第30項之發明中，藉由加 寬第一蒸鍍遮罩的開口部間隔，可減少由第一遮罩開口部 入射的輻射熱，而可更加抑制第二遮罩的熱膨脹。此外， 即使將第一蒸鍍遮罩的開口間隔形成爲相同，亦由於第二 遮罩開口寬幅縮窄，可蒸鍍高精細的成膜圖案。 此外，在如申請專利範圍第31項之發明中，形成爲 有機材料的蒸發裝置，實用性更爲優異。此外，在如申請 專利範圍第32項之發明中，成爲發揮前述作用效果的優 異蒸鍍方法。 【實施方式】 根據圖示，顯示本發明之作用，簡單說明被認爲適合 之本發明之實施形態。 在第1圖中，由蒸發源1所蒸發的成膜材料係通過構 成爲飛散限制部的遮罩保持具6的限制用開口部5，並且 透過蒸鍍遮罩2的遮罩開口部3而堆積在基板4上，在基 板4上形成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜 〇 此時，將前述基板4與前述蒸鍍遮罩2配設成分離狀 態，相對於前述蒸鍍遮罩2或前述蒸發源1在保持該分離 狀態下以相對移動自如的方式構成該基板4,使該基板4 作相對移動，藉此以比蒸鍍遮罩2本身更爲寬廣的範圍， -23- 201250025 在基板4上形成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸 鍍膜》 此外，在該蒸鍍遮罩2與蒸發源1之間設置遮罩保持 具6,該遮罩保持具6具有設有限制由蒸發源1所蒸發的 成膜材料的蒸發粒子的飛散方向的前述限制用開口部5的 飛散限制部，藉由限制用開口部5，使來自相鄰或分離位 置的蒸發口部8的蒸發粒子不會通過，而即使蒸鍍遮罩2 與基板4處於分離狀態，亦防止成膜圖案相重疊。 此外，另外形成爲使蒸鍍遮罩2接合而附設在構成該 飛散限制部的遮罩保持具6的構成，因此抑制來自前述蒸 發源1的熱入射而抑制遮罩保持具6或蒸鍍遮罩2的溫度 上升，此外，即使蒸鍍遮罩2與基板4呈分離狀態，亦與 該遮罩保持具6相接合，藉此由於蒸鍍遮罩2的熱係傳導 至遮罩保持具6，因此將蒸鍍遮罩2保持爲一定溫度的溫 度保持功能會提升。 此外，另外例如若視需要而在該遮罩保持具6.或蒸鍍 遮罩2的至少一者設置保持蒸鍍遮罩2的溫度的溫度控制 機構，則前述遮罩保持具6或蒸鍍遮罩2的溫度上升更加 被抑制，將蒸鍍遮罩2保持爲一定溫度的溫度保持功能更 加提升》 因此，具有該飛散限制部的遮罩保持具6係與蒸發粒 子飛散方向的限制功能的同時亦達成溫度保持功能，可抑 制蒸鍍遮罩2的溫度上升，且將蒸鍍遮罩2保持爲一定溫 度，而不易發生因熱所造成的蒸鍍遮罩2的變形。 -24- 201250025 因此，使基板4，相對於蒸鍍遮罩2、附設該蒸鍍遮 罩2的遮罩保持具6及蒸發源1，在保持與該蒸鍍遮罩2 的分離狀態下作相對移動，藉此以該相對移動方向連續形 成藉由蒸鍍遮罩2所致之前述成膜圖案的蒸鏟膜，即使爲 小於基板4的蒸鍍遮罩2，亦以大範圍形成蒸鍍膜，而且 因來自相鄰或分離位置的蒸發口部8的入射而造成成膜圖 案的重疊、或因熱所造成的變形等亦充分被抑制，而形成 爲可進行高精度蒸鍍的蒸鍍裝置。 此外，藉由縮窄蒸發源1的蒸發口部8的開口寬幅 Φ X，可更加抑制成膜圖案的陰影SH (蒸鍍膜的側端傾斜 部分的突出量），而且藉由朝向相對移動方向加長蒸發口 部8的開口，可提高蒸發率。 〔實施例1〕 根據圖示，說明本發明之具體的實施例1 ^ 第1圖係槪略裝置的全體圖。 本實施例係構成爲：在設爲減壓環境氣體的蒸鍍室7 內（例如真空腔室7內），配設收納有成膜材料（例如供 有機EL裝置製造用的有機材料）的蒸發源1;及設置有 供由該蒸發源1之並列設置的複數個蒸發口部8所蒸發的 前述成膜材料的蒸發粒子通過的遮罩開口部3的蒸鍍遮罩 2’由前述複數蒸發口部8所飛散的蒸發粒子通過前述遮 罩開口部3而堆積在定位成與該蒸鍍遮罩呈分離狀態的基 板4’藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜被形 -25- 201250025 成在該基板4上，且構成爲：在該基板4與蒸發源1之間 配設遮罩保持具6，該遮罩保持具6構成設有使來自相鄰 或分離位置的蒸發口部8的蒸發粒子不會通過的限制用開 口部5的飛散限制部，使配設成與基板4呈分離狀態的前 述蒸鍍遮罩2接合而附設在該遮罩保持具6，相對附設有 蒸鍍遮罩2的遮罩保持具6及蒸發源1，保持與蒸鍍遮罩 2的分離狀態下相對移動自如地構成基板4，藉由該相對 移動方向，以比蒸鍍遮罩2更大範圍地在基板4上連續形 成藉由該蒸鍍遮罩2所決定的成膜圖案的蒸鍍膜。 亦即，形成爲藉由來自複數蒸發口部8的蒸發粒子來 進行蒸鍍的構成，構成爲：可蒸鍍在大面積的基板4，並 且藉由限制用開口部5來防止來自相鄰或分離位置的蒸發 口部8的入射，而使得即使蒸鍍遮罩2與基板4處於分離 狀態，亦防止成膜圖案相重疊。 此外，在本實施例中，亦可並排設置複數蒸發源1而 並排設置各蒸發口部8，但是形成爲在一個橫長的蒸發源 1並排設置複數蒸發口部8的構成，以供前述成膜材料進 行加熱的蒸發粒子發生部26、及使由該蒸發粒子發生部 26所發生的前述蒸發粒子擴散而將壓力均一化的橫長擴散 部27來構成前述蒸發源1，在該橫長擴散部27以前述橫 向複數並排設置前述蒸發口部8。若進一步說明，例如在 藉由自動坩堝交換機構而交換自如的蒸發粒子發生部26 C 坩堝26)收納成膜材料，設置使在該坩堝26被加熱而蒸 發的蒸發粒子暫時停留而將壓力均一化的橫長形的前述橫 -26- .201250025 長擴散部27，在該橫長擴散部27的上部，沿著橫向並排 設置多數朝相對移動方向爲長形且與此呈正交的橫向如前 所述爲寬幅狹窄的開縫狀開口部而配設多數前述蒸發口部 8 〇 此外，將朝橫向並排設置的各蒸發口部8設在前述蒸 發源1之朝前述橫長擴散部27突出的導入部28的前端， 在橫長擴散部27的周圍或導入部28間配設有將蒸發源1 的熱遮斷的熱遮斷部19。 該熱遮斷部19爲將熱遮蔽者即可，本實施例係採用 冷卻板9D，具有供給冷卻媒體的媒體路，冷卻媒體一面 剝奪來自蒸發源1的熱一面通過媒體路，設置將該熱作交 換的熱交換部2 0D，而提高熱遮蔽效果。 此外，在成膜中蒸發粒子接連地附著在蒸鍍遮罩2或 遮罩保持具6，若長時間使用，會有對成膜圖案造成影響 之虞，因此在真空腔室7透過未圖示的閘閥並排設置交換 室16(例如交換用腔室16)，構成爲由真空腔室7自由 取出附設有蒸鑛遮罩2的遮罩保持具6,藉此可輕易進行 遮罩保持具6的搬出入，伴隨著遮罩保持具6的交換的成 膜工程的停止時間會變短，而使蒸鍍裝置的運轉率提升。 此外，在前述交換用腔室16具備有附有蒸鍍遮罩2的遮 罩保持具6的洗淨機構，使所附著的成膜材料剝離，以材 料回收機構17來將前述成膜材料回收且再利用，並且進 行洗淨，俾以去除殘留在成膜材料剝離後之附蒸鍍遮罩2 的遮罩保持具6的表面的成膜材料或微粒。此外，附蒸鍍 -27 - 201250025 遮罩2的遮罩保持具6係可構成爲未將所附著的成膜材料 進行剝離/回收，而以洗淨機構進行洗淨，亦可形成爲將 附蒸鍍遮罩2的遮罩保持具6本身回收而進行交換。 此外，本實施例亦有效於將基板4形成爲透明性基板 4而使用塑膠薄膜，以roll-to-roll方式來製造在該塑膠薄 膜4上設有陰極、由有機物質所構成的複數發光層、及陽 極層的有機EL顯示器的方法中，以真空蒸鍍方式來蒸鍍 發光層時。 第2圖係蒸發源1的斜視圖。 蒸發源1係在前端部設有突出形成在橫長擴散部27 的導入部28。相對於蒸發粒子所噴出的蒸發口部8的開口 面稂，充分加大橫長擴散部27的體積，藉此使在坩堝26 被加熱的蒸發粒子在橫長擴散部27擴散而使壓力形成爲 均一，藉此使來自各蒸發口部8的蒸發粒子所噴出的噴出 壓力成爲均一。 此外，藉由將各蒸發口部8朝向基板4側突出的導入 部28的突出長，比與前述基板4的相對移動方向呈正交 的橫向的該導入部28的寬幅長度爲更長，在提高對於與 前述基板4的相對移動方向呈正交的橫向的蒸發粒子的指 向性的同時，在與基板4的相對移動方向寬廣設置蒸發口 部8的開口，藉此形成爲蒸發率高且生產性高的蒸鍍裝置 〇 此外，如第3圖所示，可構成爲將導入部28配設在 橫長擴散部27內，此時，由於蒸發材料附著在熱遮斷部 •28- 201250025 19，因此以在蒸發口部8間未配設熱遮斷部19爲宜。 此外，若前述蒸發口部8的開口形狀的內角R的値較 大時，來自角隅部分的蒸發粒子的發生會減少，而使蒸發 率降低，因此以前述蒸發口部8的開口形狀的內角R的値 較小爲宜。 具體而言，若將蒸發口部8之與基板4呈相對移動方 向的長度（<i>y)設爲30mm、與基板4呈正交的橫向的長 度（Φ X )設爲2mm時，將沒有內角R的蒸發口部8與內 角R爲1mm的蒸發口部者作比較。蒸發率係與蒸發口部8 的開口面積大約成正比，因此若以.開口面積作比較時，沒 有內角R者係開口面積成爲6 0mm2，內角R爲1mm者則 成爲（56+ 7Γ ) mm2，降低約1.4%蒸發率。 此外，在分離狀態下配設基板4與蒸鍍遮罩2，若成 膜時，如第4圖所示，會產生蒸鍍膜的兩側端部的傾斜部 分亦即陰影（SH )。若將基板4與蒸鍍遮罩2的間隙設爲 G、蒸發口部8的:前述橫向的開口寬幅設爲 Φ X、該蒸發 口部8與蒸鍍遮罩2的距離設爲TS時，可以下述式（！） 表示，構成爲以未達到與該陰影SH所鄰接的蒸鍍膜的間 隔PP的方式，將蒸發口部8的開口寬幅Φχ設定爲較小 而將間隙G設定爲較大。 〔數4〕 SH= φ X XG/T S < Ρ Ρ…⑴ 具體而言，若將陰影SH設定爲0.03mm以下，將上 述TS設爲100〜300mm’上述φχ以0.5〜3mm來作設定 -29- 201250025 ，可確保間隙〇爲1 mm以上。 例如，若將上述TS設爲100mm、上述φχ設爲3mm 時，間隙G成爲1mm，而且將上述TS設爲10 0mm、上述 Φχ設爲小至〇.6mm時，可確保間隙G爲5mm。此外，亦 可將上述TS設爲300mm、上述φ X設爲3mm、間隙G設 爲lmm，可將陰影SH減小至0.01mm，可對應更爲高精細 的成膜圖案。 此外，若將具有朝與前述基板4的相對移動方向呈正 交的橫向爲寬幅狹窄的蒸發口部8的蒸發源1並排設置複 數在前述基板4的相對移動方向時，即使基板4與蒸鍍遮 罩2在分離狀態下進行蒸鍍，亦可一面抑制陰影，一面提 高蒸發率，但是成膜圖案的位置偏移成爲各蒸發口部8各 個位置偏移的總和，以配設在前述基板4的相對移動方向 的蒸發源1的蒸發口部8的數量止於最小限度爲佳》 因此，在本實施例中，如第2圖所示，配設在前述基 板4的相對移動方向的蒸發口部8係作爲一個，前述蒸發 口部8係形成爲朝向前述基板4的相對移動方向爲長形且 與此呈正交的橫向爲寬幅狹窄的開縫狀的構成。 具體而言，搬送成膜時的膜厚（□)係以蒸鍍率（A /s) /移動速度（mm/s) X蒸鍍遮罩開縫長（mm)來表 示。將蒸發口部8的前述橫向的開口寬幅φχ設爲lmm， 如第5圖所示，將基板4的相對移動方向的長度φγ的長 度爲1mm (第5圖（a))與60mm (第5圖（b))予以 成膜的情形相比較。由蒸發口部8蒸發，被蒸鍍在基板4 -30- 201250025 上的膜厚分布形成爲近似餘弦法則的cos0的20次方的分 布。若將在蒸發口都8之相對向位置的蒸鍍率設爲iA/s ，移動速度設爲1mm/ s’蒸鍍遮罩開縫的長度設爲 1 0 0mm時，搬送成膜後的膜厚在Φ y爲1 mm的情形（第5 圖（a))下，約爲83.3□，若將例如蒸鏟膜的目標膜厚設 爲400 A時，移動速度成爲約0.21mm/s。 但是，在Φ y爲60mm的情形（第5圖（b ))下， 蒸發口部8的<i»y與（第5圖（a))相比較成爲60倍， 因此被蒸鍍在基板4上的某地點a、b的蒸發粒子的入射 角0b係成爲0a的60倍。因此，同樣地若將目標膜厚設 爲400A時，移動速度亦成爲60倍的約12.5mm/s，生產 性會提升。 但是，若嚴謹而言，爲6 0mm時的成膜有效範圍 內的蒸鍍率並非爲<l>y爲1mm的60倍，而是由的中 心以左右對稱愈朝向端部愈由蒸發口部8噴出，在限制用 開口部5空間飛散的蒸發粒子數與中心部相比會減少，因 此蒸發率會降低。具體而言，由第5圖（a)的蒸發口部8 的c地點所噴出的蒸發粒子被蒸鍍在基板4上的a地點的 蒸發率，比由第5圖（b)的蒸發口部8的d地點所噴出 的蒸發粒子與基板4上的a地點同樣地被蒸鍍在b地點的 蒸鍍率爲更高。因此，如第6圖所示，成膜有效範圍內的 膜厚分布係以（b)較爲寬廣。 具體而言，若將<i>y爲60mm的情形與<i»y爲1mm的 60倍時的膜厚相比較，在蒸鍍率、移動速度、蒸鍍遮罩開 -31 - 201250025 縫的長度相同的情形下，以 Φ y爲60mm者，膜厚薄約 4 . 1 0/〇 。 此外，本實施例之前述蒸鍍遮罩2的前述遮罩開口部 3係如第7圖、第8圖所示，形成爲以與前述基板4的前 述相對移動方向呈正交的橫向並排設置多數個的構成，該 各遮罩開口部3係形成爲朝前述相對移動方向爲長形的開 縫狀、或將開口部朝前述相對移動方向並排設置複數個， 使該相對移動方向的總開口長形成爲比橫向的開口長爲較 長。 亦即，蒸鍍遮罩2的各列的遮罩開口部3係可形成爲 朝相對移動方向爲長形的開縫狀開口部，爲了提高蒸鍍遮 罩2的剛性，該遮罩開口部3亦可使朝相對移動方向呈長 形的開縫孔或小孔等小開口部以該方向散佈而將總開口長 (總合開口面積）確保爲較寬廣。 此外，蒸鍍遮罩2的開口開縫或總開口長以由中央部 朝橫向愈遠則愈長的方式進行設定，離中央部愈遠，蒸鍍 率愈低，但是蒸鍍膜的膜厚以成爲一定的方式進行設定。 例如第9圖、第10圖所示，若將與前述基板4的相 對移動方向呈正交的橫向（X軸方向）的某位置X的蒸發 粒子的飛散角度設爲0，在X的位置，成爲以餘弦法則（ cos 0 )乘以乘冪係數η而成的近似分布，酌量前述基板4 的相對移動方向（Υ軸方向）的膜厚分布，前述蒸鍍遮罩 2的遮罩開口部3的形成長度設定爲以中央部爲界線而左 右對稱呈長形變化。 -32- 201250025 具體而言，蒸發口部8的尺寸係例如蒸發口部開口寬 幅φχ設爲1mm、蒸發口部開縫長0y設爲60mm，與基 板4的相對移動方向呈正交的橫向的膜厚分布成爲接近 c〇S0的20次方的分布時，即成爲第8圖所示之膜厚分布 。若蒸發粒子對蒸鍍遮罩2的入射角變大，前述誤差的影 響會變大，因此若至膜厚薄至中心的8成爲止的位置使用 在成膜時，X軸方向的-30〜+30的寬幅6 0mm爲以一個噴 嘴進行成膜的成膜有效範圍。若將在與蒸發口部開口中心 相對向的遮罩位置的基板4的相對移動方向的形成長設爲 100mm時，在成膜有效範圍的兩端亦即-30、+30的位置 的蒸鍍遮罩開口長成爲約1 46mm，如第1 0圖所示由中心 朝兩端愈遠，遮罩開口長以左右對稱愈長。 此外，如第11圖所示，利用基板4與蒸鍍遮罩2相 分離的間隙G，將膜厚補正板29配設在蒸鍍遮罩2的基 板4側，藉此在將蒸鍍遮罩2接合在遮罩保持具6後，即 使另外需要進行膜厚補正，亦無須重貼蒸鑛遮罩2，即可 補正蒸鍍膜的膜厚。同樣地將蒸鍍遮罩2的遮罩開口部3 ，未形成爲朝左右兩端愈遠愈爲朝基板4的相對移動方向 呈長形的開縫狀，而形成爲同一開縫，亦可如第1 1圖所 示利用以預定範圍形成開口部且將此以外加以閉塞的膜厚 補正板29進行補正，而形成爲第1 0圖所示之開縫開口長 〇 此外，如第12圖所示，將決定被蒸鍍在基板4的成 膜圖案的蒸鍍遮罩，2的遮罩開口部3之與前述基板4的相 -33- 201250025 對移動方向呈正交的橫向的形成間距，相較於前述蒸 的成膜圖案的間距，以對應基板4與蒸鍍遮罩2的間 的大小及蒸發口部8與至蒸鍍遮罩2的距離TS的大 相異分量設定爲較窄》 具體而言，如第12圖所示，由與蒸發源的蒸發 開口中心相對向的遮罩位置至遮罩開口中心的距離 係以對由與蒸發口部開口中心相對向的基板位置至成 案中心的距離Px乘以α / (l + α)的分量（此時α / G )變小。 因此，例如若將上述距離TS設爲100mm、上述 G設爲1mm時，上述α係成爲100，α / (l+α )係 約0.99。因此，例如若將Ρχ設爲10mm時，ΜΡχ係 9.9mm’ ΜΡχ係成爲小於Ρχ的値。 亦即，由於基板4與蒸鍍遮罩2相分離，因此對 板4與蒸鍍遮罩2的間隙G的大小及蒸發口部8與至 遮罩2的距離TS的大小，通過蒸鍍遮罩2的遮罩開 3而堆積在基板4上的蒸鍍膜的位置係以橫向偏移， 考慮該偏移量，將蒸鍍遮罩2的開口間距設定爲比成 案爲更窄’藉此可形成成膜圖案位置精度高的蒸鍍膜 此外’同樣地，如第13圖所示，蒸鍍遮罩開口 Μχ係若蒸發口部8的開口寬幅φχ大於該遮罩開口 Μχ時，以對應基板4與蒸鍍遮罩2的間隙G的大小 發口部8與至蒸鍍遮罩2的距離TS的大小的相異部 寬。具體而言，遮罩開口寬幅Μχ係以（φχ+αΡ/ 鍍膜 隙G 小的 口部 ΜΡχ 膜圖 =TS 間隙 成爲 成爲 應基 蒸鍍 口部 但是 膜圖 寬幅 寬幅 及蒸 分變 (1 + -34- .201250025 α ))表示（此時α = TS/ G)。 例如，若將蒸鍍圖案寬幅P設爲0.1mm、TS設爲 10 0mm、φ X設爲1mm時，遮罩開口寬幅Mx係G爲3mm 時爲約0.126mm，G爲5mm時爲約0.143mm，比蒸鍍圖案 寬幅P爲更寬廣。 此外，在本實施例中，設置朝基板4的相對移動方向 延伸存在的肋部24,在該肋部24的基板4側前端面，設 有將設在各限制用開口部5的蒸鍍遮罩2支承且接合的遮 罩安裝支承面23。例如第14圖所示，在對發光層的R像 素進行蒸鍍時，可以其他的G、B像素寬幅及其間隔份設 置遮罩安裝支承面，23，由於基板4與蒸鏟遮罩2的間隙G 呈分離，故可確保爲較寬廣。具體而言，基板4與蒸鍍遮 罩2相密接的構成下的遮罩安裝支承面23係使用供RGB 像素蒸鍍之用的蒸鍍膜間隔PP與蒸鍍圖案寬幅P，而以 2P + 3PP表示。此外，由於具有間隙G，由與蒸發口部8 相對向的基板4中心觀看，會產生蒸鍍圖案的最邊端位置 與蒸鍍遮罩2的遮罩開口部3的最邊端位置的差A。A係 以G(Px + P/2-0x/2) / (TS + G)表示，遮罩安裝支承 面23係與基板4與蒸鍍遮罩2相密接的情形相比較，變 得寬廣2A份。 若更具體說明之’例如若將蒸鍍圖案寬幅P設爲 0.1mm、蒸鏟膜間隔PP設爲〇.05mm時，基板4與蒸鍍遮 罩2相密接時的遮罩安裝支承面23成爲0.35mm。但是， 本實施例之基板4與蒸鍍遮罩2處於分離狀態時，例如若 -35- 201250025 將上述TS設爲200mm、上述φχ設爲lmm、上述Px設 爲3 0mm時，遮罩安裝支承面23在間隙G爲1mm時爲約 0.64mm、在間隙G爲5mm時爲約1.79mm，可充分確保將 蒸鍍遮罩2相疊合而進行點熔接的面積。 〔實施例2〕 根據圖示，說明本發明之具體實施例2。 如第1 5圖所示，按每個限制用開口部5並排設置複 數蒸發口部8，來自複數蒸發口部8的蒸發粒子在基板4 上相重疊，藉此可提高蒸鍍率。 具體而言，若爲按每個限制用開口部5配設3個蒸發 口部8的構成，由中央的蒸發口部8所蒸發的蒸發粒子係 通過遮罩開口部3而堆積在基板4上，由鄰接的蒸發口部 8所蒸發的蒸發粒子會通過鄰接的遮罩開口部3而堆積在 前述基板4上的相同位置。由於以並排設置複數蒸發口部 8的部分，被重疊在基板4上的量會變多而使蒸鍍率變高 〇 此外，以與前述基板4的相對移動方向呈正交的橫向 並排設置3個的蒸發口部8的配設位置精度良好時，蒸鍍 率係變爲相同，但是亦可形成爲藉由將各蒸發口部8的開 口寬幅Φχ設爲1/3，而更進一步抑制蒸鍍膜的陰影SH 的構成。 供蒸鍍膜在基板4上相重疊之用的蒸發口部8的間隔 係藉由下式（5)來決定。 -36- 201250025 〔數5〕 Ρ φ x = PMx X (G +T S) /G…（5) (P φ X ==蒸發口部的間隔、PMx =蒸鍍遮罩的遮罩開 口部的間隔、G=··基板與蒸鍍遮罩的距離、TS =蒸發口部 與蒸鍍遮罩的距離） 具體而S ’若將PMx設爲〇.5mm、G設爲4mm、TS 設爲 200mm 時，Ρφχ 成爲 25.5mm。 〔實施例3〕 根據圖示，說明本發明之具體實施例3。 將與限制用開口部5呈對向狀態所配設的蒸發口部8 ，以與基板4的相對移動方向呈正交的橫向並排設置複數 個，藉此由複數蒸發口部8所蒸發的蒸發粒子係可通過一 個遮罩開口部3，而蒸鍍成等間隔的成膜圖案，因此可減 少決定成膜圖案的遮罩開口部3的數量，而加寬遮罩開口 部3的間距，因此蒸鍍材遮罩部位的寬幅可加寬，蒸鍍遮 罩2的機械強度會增加，可防止洗淨時的遮罩的破壞或黏 合，而且可將遮罩安裝支承面23確保爲較寬，因此蒸鍍 遮罩2與遮罩保持具6的接合可更爲強固地進行。 具體而言，無論如第1 6圖所示，在與限制用開口部5 內呈對向狀態下所配設的蒸發口部8爲奇數（3)個的情 形下，或如第17圖所示，在與限制用開口部5內呈對向 狀態下所配設的蒸發口部8爲偶數（2)個的情形下’限 制用開口部5內的遮罩開口部3的間隔均爲均等，可在將 -37- 201250025 限制用開口部5內的成膜圖案數量除以蒸發口部8的數量 所得的數減掉遮罩開口部3的數量。 此外，在第1 6圖所示’在與限制用開口部5內呈對 向狀態下配設奇數（3)個蒸發口部8’在可將限制用開口 部5內的成膜圖案數除以蒸發口部8的數量的數減掉遮罩 開口部3的數量的構成中，如第18圖所示’由於將遮罩 開口部3的間隔形成爲1 / 2，因此成膜圖案間隔亦可形成 爲1/2，可蒸鍍更高精度的成膜圖案。 此外，如第1 9圖所示’由於減少遮罩開口部3的數 量，因此在有遮罩開口部3的遮罩表面亦可配設媒體路或 熱管，將蒸鍍遮罩2的表面溫度保持爲一定的能力更加提 升，而且亦可如第2 0圖所示’並非爲將媒體或熱管的數 量增加，而是增加與蒸鍍遮罩2相接觸的表面積’藉此將 蒸鍍遮罩2的溫度保持爲一定。此外’亦可在遮罩保持具 6亦具備溫度控制機構’藉此可更加保持附設在遮罩保持 具6的蒸鍍遮罩2的溫度。 由複數蒸發口部8所蒸發的蒸發粒子係通過同一遮罩 開口部3，用以以所期望的成膜間距進行蒸鍍的蒸發口部 8的間隔係藉由下式（5 )來決定。 〔數 6.〕 Ρ φ X = Ρ Μ X X (G + T S) / G …（5) (Ρ φ X =蒸發口部的間隔、ΡΜχ =蒸鍍遮罩的遮罩開 口部的間隔、G =基板與蒸鍍遮罩的距離、TS=蒸發口部 與蒸鍍遮罩的距離） -38- 201250025 具體而言，若將PMx設爲0.5mm、G設j 設爲200mm時，ΡφΧ成爲25.5mm，若配設3 8，遮罩開口部間距會變爲3倍，因此PMx成| 此外，如第21圖所示，藉由減少決定成 罩開口部3的數量，可加大遮罩開口部的間隔 實施例2所示成膜圖案在基板4上相重疊的情 限制用開口部5呈:對向狀態所配設的蒸發口部 情形相比較，可以最邊端的遮罩開口部B被閉 加大遮罩安裝支承面23。 〔實施例4〕 根據圖示，說明本發明之具體實施例4» 如第22圖所示，在前述基板4與前述蒸彳 間，與基板4相密接配設有第二蒸鍍遮罩1〇。 實施例中係形成爲蒸發源1、遮罩保持具6及 罩2與第二蒸鍍遮罩10、基板4作相對移動的 第二蒸鍍遮罩10可在分離狀態下被配設在第一 與基板4之間，亦可在蒸發源1及附設於遮罩 蒸鍍遮罩2與基板4的相對移動中，與任何的 起進行。 該第二蒸鍍遮罩10的遮罩開口部11係形 定前述成膜圖案的配列’比該第二蒸鑛遮罩1 述蒸發源1側的前述第一蒸鍍遮罩2的前述遮 的寬幅係設爲與第二蒸鍍遮罩10相同或比其 專 4mm、TS 個蒸發口部 ! 1. 5 mm。 膜圖案的遮 ，因此將使 形、或將與 8配設1個 塞的部分來 渡遮罩2之 因此，在本 第一蒸鍍遮 構成，但是 蒸鍍遮罩2 保持具6的 相對移動一 成爲最終決 〇還位於前 罩開口部3 更寬幅寬廣 -39- 201250025 。此外，限制用開口部5內的第二蒸鍍遮罩10的遮罩開 口部1 1的形成間隔係形成地比第一蒸鍍遮罩2的遮罩開 α部3的形成間隔更寬》 在本實施例中，使第二蒸鍍遮罩10與基板4相密接 來配設，藉此不會發生因前述第一蒸鍍遮罩2所造成的陰 影SH。此外，來自蒸發源1的輻射熱與蒸發粒子所傳導 的熱量係在第一蒸鍍遮罩2被吸收，由該第一蒸鍍遮罩2 所被放出的放射熱傳播至第二蒸鍍遮罩10，因此入射至第 二蒸鍍遮罩1〇的熱量係大幅減少，可抑制第二蒸鍍遮罩 10的熱膨脹。 此外，亦可構成爲藉由在遮罩保持具6具備冷卻機構 ，使第一蒸鍍遮罩2的溫度不會更加上升》 因此，在本實施例中，第一蒸鍍遮罩2係使來自蒸發 源1的熱不會傳播至第二蒸鍍遮罩1〇，以入射至第二遮罩 開口部1 1的蒸鍍圖案不會偏移的方式由線膨脹係數小的 因瓦合金材形成，遮罩開口部3係以蝕刻加工來形成。第 二蒸鍍遮罩1〇係由於配設有第—蒸鍍遮罩2，大幅抑制熱 量的入射，因此即使以線膨脹係數大的鎳等形成，亦不會 熱膨脹，結果，由於形成最終決定的成膜圖案的蒸鍍膜’ 因此可使用可高精度形成遮罩開口部11的電鑄法。 此外，如第23圖所示，在按每個限制用開口部5並 排設置複數蒸發口部8’可藉由來自複數蒸發口部8的蒸 發粒子在基板4上相重璺來提高蒸鍍率的構成中’因製作 及安裝精度或蒸發源1加熱時的熱膨脹等爲原因’基板4 -40- 201250025 與蒸鍍遮罩2的間隙G、蒸發口部8與蒸鍍遮罩2的距離 TS、與基板4的相對移動方向呈正交的橫向中的蒸發口部 8彼此的距離會改變，藉此來自複數蒸發口部8的蒸發粒 子無法正確地重疊在基板4上，而使成膜圖案擴大，但是 藉由使第二蒸鍍遮罩10與基板4相密接來作配設，來形 成第二遮罩開口部11的成膜圖案，因此成爲可容許上述 位置偏移的蒸鍍裝置。 其中，本發明並非侷限於實施例1〜4，各構成要件的 具體構成係可適當設計。 【圖式簡單說明】 第1圖係將本實施例之主要部位作剖面的槪略說明正 面圖。 第2圖係本實施例之蒸發源的說明斜視圖。 第3圖係顯示本實施例之蒸發源之其他例的說明斜視 圖。 第4圖係顯示藉由縮窄將本實施例之導入部配設在橫 長擴散部內的蒸發源的蒸發口部的開口寬幅，可抑制蒸鍍 膜的陰影，且可藉此加大間隙的說明圖。 第5圖係將本實施例之主要部位作剖面的說明側面圖 〇 第6圖係顯示第5圖所示之蒸發口部在朝Y軸方向爲 長形的開縫及非爲此的Y軸方向的膜厚分布的不同的圖表 -41 - 201250025 第7圖係本實施例之蒸鍍遮罩的擴大說明平面圖。 第8圖係顯示本實施例之蒸鍍遮罩之其他例的擴大說 明平面圖。 第9圖係顯示本實施例之某位置X的蒸發粒子的飛散 角度0的說明圖。 第10圖係顯示本實施例之膜厚分布成爲根據餘弦法 則的分布，且按照此，將遮罩開口部的遮罩開口長進行補 正設定成由中央部以橫向愈遠則愈長的圖表。 第11圖係本實施例之膜厚補正板的擴大說明平面圖 〇 第12圖係顯示本實施例之蒸鍍遮罩的遮罩開口部的 橫向的形成間距比成膜圖案間距稍微窄的說明圖。 第13圖係顯示本實施例之蒸鍍遮罩的遮罩開口部的 橫向的開口寬幅比成膜圖案寬幅稍微寬的說明圖。 第14圖係顯示可將本實施例之遮罩保持具的限制用 開口部間的肋部的遮罩安裝支承面取得較寬的說明圖。 第15圖係顯示第二實施例之來自複數蒸發口部的蒸 發粒子在基板上重疊而進行蒸鍍的情形的說明圖。 第16圖係顯示在第三實施例之限制用開口部內配設 奇數個蒸發口部，可減少遮罩開口部的數量的說明圖。 第1 7圖係顯示在第三實施例之限制用開口部內配設 偶數個蒸發口部，可減少遮罩開口部的數量的說明圖。 第1 8圖係顯示在第丨6圖所示之第三實施例之限制用 開口部內配設奇數個蒸發口部的構成中，若將遮罩開口部 •42- 201250025 的間隔設爲1/2時，成膜圖案間隔亦可設爲1/2的說明 圖。 第19圖係顯示在減少第三實施例之遮罩開口部的數 量的遮罩開口部間配設媒體路或熱管的說明圖。 第20圖係顯示可增大第19圖所示之媒體路或熱管與 蒸鍍遮罩的接觸面積的說明圖。 第21圖係顯示藉由減少第三實施例之遮罩開口部的 數量’可加寬遮罩安裝支承面的說明圖。 第22圖係第四實施例（設有第二蒸鍍遮罩的實施例 )的限制用開口部內的第一蒸鍍遮罩與第二蒸鍍遮罩的遮 罩開口部數量相同，形成間隔不同的說明圖。 第23圖係在第四實施例（設有第二蒸鍍遮罩的實施 例）的限制用開口部內配設三個蒸發口部的說明圖。 【主要元件符號說明】 1 :蒸發源 2 :蒸鍍遮罩 3 :遮罩開口部 4 :基板 5 :限制用開口部 6 :遮罩保持具 7:蒸鍍室（真空腔室） 8 :蒸發口部 9D :冷卻板 -43- 201250025 ίο:第二蒸鍍遮罩 1 1 :第二遮罩開口部 16 :交換室 17 :材料回收機構 1 9 :熱遮斷部 20D :熱交換部 23:遮罩安裝支承面 24 :肋部 26 :蒸發粒子發生部（坩堝） 27 :橫長擴散部 28:蒸發口部形成用突出部 29 :膜厚補正板 Φ X :開口寬幅 G :間隙 MPx :形成間距201250025 VI. [Technical Field] The present invention relates to a vapor deposition device and a vapor deposition method for forming a vapor deposition film of a film formation pattern by a vapor deposition mask on a substrate. [Prior Art] In recent years, an organic EL display device using an organic electroluminescence element has been attracting attention as a display device instead of a CRT or an LCD. This organic EL display device has a structure in which an electrode layer and a plurality of organic light-emitting layers are laminated on a substrate, and a sealing layer is formed to cover the self-luminous light. The high-speed response is excellent compared with LCD, and a high viewing angle and high contrast can be achieved. The organic EL device as described above is generally produced by a vacuum deposition method, and a substrate and a vapor deposition mask are placed in close contact with each other in a vacuum chamber to perform vapor deposition, and the vapor deposition mask is used to form a desired layer. A vapor deposited film of a film pattern is formed on the substrate. Further, in the production of the organic EL device as described above, the vapor deposition mask for obtaining a desired film formation pattern is also increased in size as the substrate is increased in size, but in order to increase the size, it is necessary to perform vapor deposition. Since the mask is welded and fixed to the mask frame to be produced, the large-sized vapor deposition mask is not easy to manufacture, and if the tension is insufficient, the mask is enlarged and the mask is covered. The center is deformed, and the degree of adhesion between the vapor deposition mask and the substrate is lowered, or the mask frame is made large in consideration of such a situation, so that wall thickness or weight increase is more remarkable. As described above, with the increase in the size of the substrate, the size of the vapor deposition mask -5 - 201250025 is increased. However, it is difficult to increase the size of the fine mask, and even if it is made, it may be caused by the above-mentioned deformation. Various problems occur in practical use. Further, as shown in, for example, Japanese Patent Publication No. 20 1 0-5 1 1 784, there is also an opening portion in which a substrate and a vapor deposition mask are separated, and an evaporation source and an evaporation particle having directivity are generated. a method of forming an organic light-emitting layer with high precision, but the evaporation source and the opening portion for causing directivity are integrally formed, and the integrated structure is heated to a high temperature in order to generate evaporating particles from the opening. Therefore, the radiant heat from the evaporation source is received by the vapor deposition mask, and the positional accuracy of the deposition pattern due to thermal expansion of the vapor deposition mask cannot be prevented from being lowered. Further, by forming a structure in which the substrate and the vapor deposition mask are separated from each other and relatively moved, even if the vapor deposition mask is small, the desired film formation pattern can be vapor-deposited on the large substrate. However, since the directivity is imparted to the evaporated particles, there is a problem that it is necessary to reduce the diameter of the opening of the evaporation source, and it is impossible to increase the evaporation rate. [Prior Art] [Patent Document 1] [Patent Document 1] JP-A-2010-511784 SUMMARY OF INVENTION [Problems to be Solved by the Invention] The present invention solves various problems as described above, and aims to provide a steaming. In the plating apparatus and the vapor deposition method, the size of the substrate is increased, and it is not necessary to increase the size of the vapor deposition mask, and even if it is a smaller vapor deposition mask than the substrate, the substrate is separated. In the case of the relative movement, the vapor deposition film of the film formation pattern by the vapor deposition mask is relatively moved in the separated state, whereby the vapor deposition is performed not only at a good rate but also rapidly, and is formed in a state of being In addition, the restriction opening portion is provided in the evaporation source, and the scattering direction of the evaporating particles is restricted, so that the evaporating particles from the adjacent hair opening portion do not pass, and the film formation pattern is prevented from having the scattering restricting portion in which the restriction opening portion is provided. a vapor deposition mask which not only serves to suppress incidence of radiant heat from an evaporation source, but also has a front mouth portion formed to be orthogonal to a relative movement direction of the substrate. Open to a wide-narrow slit, whereby the plating mask vapor deposition testimony in a separated state relative movement accuracy and high rate configuration. (Means for Solving the Problem) The gist of the present invention will be described with reference to the accompanying drawings. A vapor deposition device configured to form a vapor deposition film material on a mask opening 1 of a vapor deposition mask 2, and form a film formed on the substrate 4 by the vapor deposition mask 2 The vapor deposition device is characterized in that: the mask holder 6 is disposed in a state of being opposed to the evaporation source 1, and the mask holder 6 has evaporation of the film formation material evaporated by the evaporation source 1. The particles can be vapor-deposited in a wide range, and are easy to manufacture, and are effective in overlapping the steaming mold between the separation and the vapor deposition mask or at the separation position, and the mask holder is attached to the scattering restriction portion. The evaporation of the evaporation source is long, and the vapor deposition film deposited on the substrate pattern can be deposited between the evaporation source 1 and the substrate 4 while the substrate is vaporized. The scattering restricting portion 5 that restricts the opening portion of the 201250025 restricting direction in the scattering direction of the sub-member is attached to the mask holder 6 in a state in which the vapor deposition mask 2 disposed in a state of being separated from the substrate 4 is attached to the mask holder 6 The aforementioned mask provided with the vapor deposition mask 2 described above The holder 6 and the evaporation source 1' are configured to be relatively movable in a state of being separated from the vapor deposition mask 2, and the evaporation port portion 8 of the evaporation source 1 is formed toward the substrate 4. The direction of relative movement is long and the transverse direction orthogonal thereto is a wide narrow slit shape. Further, in the vapor deposition device of the first aspect of the invention, the evaporation source 1 in which the film formation material is accommodated is disposed in the vapor deposition chamber 7 which is a reduced-pressure ambient gas, and is provided. The vapor deposition mask 2 of the mask opening portion 3 through which the evaporating particles of the film forming material evaporated by the evaporation port portion 8 of the evaporation source 1 pass, and a plurality of the evaporation port portions 8 are arranged in parallel, and The vapor deposition mask 2 is in a state in which the substrate 4 is aligned in a separated state, and evaporating particles scattered by the plurality of evaporation ports 8 are deposited by the mask opening 3, and film formation is determined by the vapor deposition mask 2. The vapor deposition film of the pattern is formed on the substrate 4, and the mask holder 6 is disposed between the evaporation source 1 and the substrate 4 disposed to face the evaporation source 1 The mask holder 6 is configured to include a scattering restricting portion that allows the evaporation opening particles of the evaporation port portion 8 from the adjacent or separated position to pass through, and the scattering holder 6 is disposed and disposed in the mask holder 6 The front substrate 4 is in a separated state The vapor deposition mask 2 is provided so that the substrate 4 is opposed to the mask holder 6 to which the vapor deposition mask 2 is attached and the evaporation source 1 is kept in a separated state from the vapor deposition mask 2 In the relative movement direction, the vapor deposition film of the film formation pattern of the -8-201250025 vapor deposition mask 2 is continuous, and even if it is smaller than the vapor key mask 2 of the substrate 4, the vapor deposition film is formed in a wide range. . Further, the steam shovel apparatus according to the first aspect of the invention, wherein the evaporation port portion 8 of the plurality of evaporation sources 1 is arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, and The plurality of restriction openings 5 provided in the scattering restricting portion of the mask holder 6 are arranged side by side in the lateral direction, and the evaporating particles evaporated by the respective evaporation ports 8 are only used for the aforementioned restriction. The opening portion 5 is also transmitted through the mask opening portion 3 of the vapor deposition mask 2 facing the restriction opening portion 5, and the vapor deposition film 'forming the film formation pattern on the substrate 4 is adjacent or separated. The evaporating particles of the evaporation port portion 8 at the position are attached and captured, and the scattering opening direction of the evaporating particles is restricted by the restriction opening portion 5. In the vapor deposition device of the first aspect of the invention, the vapor deposition mask 2 is attached to an end portion of the mask holder 6 on the substrate 4 side. In the vapor deposition device of the fourth aspect of the invention, the vapor deposition mask 2 is placed on the end portion of the mask holder 6 on the side of the substrate 4 by applying tension to the vapor deposition mask 2. In the vapor deposition device of the fifth aspect of the invention, the mask holder 6 is provided with the vapor deposition mask 2 by applying tension to the relative movement direction of the substrate 4. In the vapor deposition device according to the first aspect of the invention, the vapor deposition mask 2 is formed by dividing into a plurality of horizontal directions orthogonal to the direction in which the substrate 4 is moved in the direction of 201250025, and the division is performed. The vapor deposition mask 2 is attached to the mask holder 6 in the lateral direction, and the vapor deposition apparatus of the first aspect of the invention is in the relative movement direction of the substrate 4. The evaporation port portion 8 of the plurality of evaporation sources 1 is arranged side by side in the orthogonal direction, and each of the one or more evaporation port portions is covered with the aforementioned scattering having the restriction opening portion 5 in the opposing state. The vapor deposition mask 2 is attached to the end portion of the mask holder 6 on the substrate 4 side so as to restrict the opening portions 5 of the mask holder 6 . The vapor deposition device according to claim 1, wherein the mask holder 6 extends in a relative movement direction of the substrate 4, and the vapor deposition mask 2 is prevented from being laid on the mask holder. At 6 o'clock, the visor 24 of the mask holder 6 is deformed by the tension applied to the vapor deposition mask 2, and the rib 24 that raises the rigidity of the mask holder 6 in the laying direction is provided in the restriction opening. The composition of 5 rooms. The vapor deposition device of the ninth aspect of the invention, wherein the ribs 24 extending in the relative movement direction of the substrate 4 are formed between the restriction openings 5 of the mask holder 6 The mask mounting support surface 23 to which the vapor deposition mask 2 provided in each of the restriction opening portions 5 is joined is provided on the front end surface of the substrate 4 side. In the vapor deposition device of the first aspect of the invention, the mask holder 6 has a shape in which the opening portion 5 on the evaporation source 1 side is smaller than an opening on the substrate 4 side. The shape of the area -10- 201250025. In the vapor deposition device of the first aspect of the invention, the substrate 4 and the vapor deposition mask 2 are vapor-deposited in a separated state, and the vapor deposition mask 2 is formed on the substrate 4. In the vapor deposition film of the film pattern, the side end inclined portion of the vapor deposition film is a shadow S Η, and if the gap between the substrate 4 and the vapor deposition mask 2 is g, the lateral opening of the evaporation port portion 8 is When the width of the evaporation port portion 8 and the vapor deposition mask 2 is TS, the expression is expressed by the following formula (1), and the shadow SH does not reach the gap with the adjacent vapor deposition film. The gap G is set to be larger than the configuration in which the opening width φ5{ of the evaporation port portion 8 is set to be small. [Number 1] SH II φ X XG/T S In the vapor deposition device of the first aspect of the invention, the evaporation source 1 is obtained by the evaporating particle generating unit 26 that heats the evaporating material, and is generated by the evaporating particle generating unit 26. The horizontally long diffusing portion 27 in which the evaporating particles are diffused to uniformize the pressure; and the plurality of evaporating opening portions 8 in the horizontally long diffusing portion 27 are arranged side by side in a lateral direction orthogonal to the relative moving direction of the substrate 4 In the configuration, the evaporation source 1 is arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate 4 by one or plural. Further, in the steaming apparatus according to the first aspect of the invention, wherein at least one of the periphery of the horizontally long diffusing portion 27 or the periphery of the evaporation opening portion 8 is disposed to block the heat of the evaporation source 1 Thermal blocking portion i9. In the vapor deposition device of the thirteenth aspect of the invention, in the vapor deposition device of the thirteenth aspect of the invention, the evaporating particles diffused by the horizontally long diffusing portion 27 are directional and scattered when the evaporating particles are ejected from the evaporating port portion 8 The vapor deposition device according to the fifteenth aspect of the invention, wherein the plurality of evaporation ports 8 are provided on the front end surface of the introduction portion 28 on the substrate 4 side. The introduction length of the introduction portion 28 in the lateral direction of the introduction portion 28 toward the substrate 4 is longer than the width of the introduction portion 28 in the lateral direction orthogonal to the relative movement direction of the substrate 4. In the vapor deposition device of the fifteenth aspect of the invention, the introduction portion 28 is disposed such that the horizontally long diffusion portion 27 protrudes toward the substrate 4 side. In the vapor deposition device of the first aspect of the invention, the mask opening portion 3 of the vapor deposition mask 2 is formed such that the plurality of mask openings 3 are arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4 The configuration of each of the mask openings 3 is formed in a slit shape that is elongated in the relative movement direction or a plurality of openings in the relative movement direction are arranged in parallel with the total opening length of the relative movement direction. The central portion of the restriction opening portion 5 is set such that it is longer as it is farther from the lateral direction, and the vapor deposition device of the first aspect of the invention is in the vapor deposition mask 2 On the side of the substrate 4, a film thickness correcting plate 29 that closes a part of the opening of the mask opening 3 to set an opening range of each of the mask openings 3 is disposed. -12-201250025 The vapor deposition device of the first aspect of the invention, wherein the mask opening 3 of the vapor deposition mask 2 that is deposited on the film formation pattern of the substrate 4 is determined to be adjacent to the substrate 4 The gap Mpx is formed in the horizontal direction orthogonal to the moving direction, and the gap between the substrate 4 and the vapor deposition mask 2 is G, and the distance between the vapor deposition mask 2 and the evaporation port portion 8 is TS. When the formation interval of the film formation pattern in the lateral direction orthogonal to the relative movement direction of the substrate 4 is Ρχ, it is represented by the following formula (2), and is set to be narrower than the film formation pattern formation interval ,, and the steaming is performed. The gap size Μχ in the lateral direction orthogonal to the relative movement direction of the substrate 4 of the mask opening 2 of the plating mask 2 is such that the gap between the substrate 4 and the vapor deposition mask 2 is G, the aforementioned When the distance between the vapor deposition mask 2 and the evaporation port portion 8 is TS, and the film formation width in the film formation pattern of the vapor deposition film is ρ, it is represented by the following formula (3), and is set to be larger than the vapor deposition film. The film-forming pattern is wider and wider. [Number 2] Μ Ρ X = Ρ X { α / ( 1 + a )} a = TS / G ... (2) [Number 3] Μχ = (φ x + ap) / (l + a) Q! = TS (3) The vapor deposition device of the first aspect of the invention, wherein the mask holder 6 to which the vapor deposition mask 2 is attached is provided, and the vapor deposition chamber 7 can be freely reciprocally Moving exchange room 16. Further, 'the vapor deposition apparatus of the twenty-first aspect of the patent application' includes a cleaning mechanism in the exchange chamber 16, which is attached to the mask holder 6 or the aforementioned attachment to the mask holder 6. The film forming material of at least one of the vapor deposition masks 2 - 13 - 201250025 is washed. The vapor deposition device of claim 21, wherein the exchange chamber 16 is provided with a material recovery mechanism that adheres to the mask holder 6 or the steam attached to the mask holder 6. At least one of the film forming materials of the plating mask 2 is recovered. Further, in the vapor deposition device of the first aspect of the invention, the plurality of the vapor deposition devices are arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4, and the plurality of the openings are disposed in a state of being opposed to the restriction opening 5 In the evaporation port portion of the evaporation source 1, the gap between the plurality of vapor deposition ports 8 arranged in parallel is considered in consideration of the gap G between the substrate 4 and the vapor deposition mask 2, and the evaporation port portion 8 and the vapor deposition mask. The distance TS of 2 and the interval between the mask openings 3 of the vapor deposition mask 2 are set, whereby the evaporated particles evaporated by the evaporation port 3 through the mask opening 3 are passed through The evaporating particles evaporated by the adjacent evaporation port portion 8 of the adjacent mask opening portion 3 are superposed on the substrate 4. In the vapor deposition device of the first aspect of the invention, the plurality of the vapor deposition devices are arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4, and the plurality of the openings are disposed in a state of being opposed to the restriction opening 5 The evaporating port portion of the evaporation source 1 takes the space gap of the plurality of evaporating port portions 8 arranged side by side in consideration of the gap G between the substrate 4 and the vapor deposition mask 2, and the evaporation port portion 8 and the vapor deposition mask. The distance TS of the second and the interval between the mask openings 3 of the vapor deposition mask 2 are set, and the mask opening in the lateral direction of the substrate 4 in which the relative movement direction of the substrate 4 is orthogonal is set. 3 is formed in a lateral direction orthogonal to the relative movement direction of the substrate 4 in accordance with the number of the evaporation port portions 8 disposed in the state in which the opening portion 5 is opposed to the same restriction opening portion -14 to 201250025. The number of patterns is equal to the interval. Further, in the vapor deposition device of the first aspect of the invention, the vapor deposition mask 2 to be attached to the mask holder 6 is set as the first vapor deposition mask 2, and the substrate 4 and the foregoing A second vapor deposition mask 10 is disposed between the vapor deposition masks 2 . Further, in the vapor deposition device of claim 26, the second vapor deposition mask disposed in the lateral direction orthogonal to the relative movement direction of the substrate 4 in the restriction opening portion 5 is disposed. The number of the mask openings 11 is orthogonal to the relative movement direction of the substrate 4 in the same restriction opening 5 that is disposed closer to the evaporation source 1 than the second vapor deposition mask. The number of the mask openings 3 of the first vapor deposition mask 2 in the lateral direction is the same, and the mask openings 3, 11 of the respective vapor deposition masks 2, 10 are formed to correspond to the distance from the substrate 4 described above. The mask opening width of the mask opening portion u of the second vapor deposition mask 10 is set to be the same or wide and narrow as compared with the first vapor deposition mask 2. The vapor deposition apparatus of claim 26, wherein the second vapor deposition mask 1 has a linear expansion coefficient larger than a material of the first vapor deposition mask 2 located on the evaporation source 1 side. Formed. The vapor deposition device of claim 26, wherein the second vapor deposition mask 10 is formed by electroforming. In the vapor deposition device of claim 26, the -15-201250025 is disposed in the second vapor-deposited mask in the lateral direction orthogonal to the base motion direction in the restriction opening portion 5. The number of the opening portions 11 is larger than the number of the mask openings 3 of the vapor deposition mask 2 which are orthogonal to the relative movement direction of the substrate 4 which are disposed within the same limit, and the opening portion for the restriction The number of the evaporation port portions 8 in the 5 is large. Further, 'the vapor-deposited film forming material of the first aspect of the patent application is formed as an organic material>> In addition, it is an evaporation method characterized by: vapor-depositing any one of the items 1 to 31 of the range In the apparatus, a film formation pattern determined by the vapor deposition mask 2 is formed thereon. (Effect of the Invention) The present invention is configured as described above, so that it is not necessary to increase the size of the vapor deposition mask even if it is The vapor deposition mask also causes the substrate to be vaporized by the vapor deposition mask in a relative range in a separated state, and is kept in a separated state for relative movement. The vapor deposition is performed in a high-efficiency and rapid manner. Further, in the state of being separated from the shape, the restriction opening portion is provided between the masks, and the scattering direction of the evaporating particles is restricted, so that the evaporating particles in the evaporating port portion at the position are not By preventing the vapor deposition mask from being joined and being attached to the first front side of the opening portion 5 having the relative movement of the plate 4, the first front portion is disposed in the same number, and is formed. Will be used as a patent A vapor deposited film of the above substrate 4 g. The large-sized substrate of the substrate is moved more in a small size, and the vapor deposition of the large-coating film is not limited, and the structure is easily formed even in the scattering restricting portion of the opening portion of the film-pattern overlap-restricting opening-16-201250025. In the configuration of the mask holder, the substrate and the vapor deposition mask are relatively moved in a state of being separated, and high-precision vapor deposition can be performed to narrow the evaporation port of the evaporation source. The width of the opening can be further suppressed (also according to the size of the gap between the substrate and the vapor deposition mask, and the distance between the evaporation source and the vapor deposition mask). The shadow of the film formation pattern (the protrusion of the side end of the vapor deposition film) In addition, the evaporation device and the vapor deposition method 0 which can increase the evaporation rate by lengthening the opening length of the evaporation port portion in the relative movement direction can be increased in size corresponding to the substrate, particularly in the production of the organic EL element. The evaporation of the organic light-emitting layer can prevent the substrate, the vapor deposition mask, and the vapor deposition film from being damaged by the contact of the mask, and the vapor deposition mask of the substrate can be used to achieve higher precision. Vapor deposition apparatus and a deposition method of an organic EL element manufactured using. Further, in the invention of the second aspect of the patent application, the effects of the present invention can be more effectively exhibited, and the vapor deposition apparatus which is more practical is more excellent. Further, in the invention of claim 3, the plurality of evaporation ports and the restriction openings are arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate, thereby preventing the passage of the adjacent positions. The structure in which the particles are evaporated to prevent the film formation patterns from overlapping can be an excellent vapor deposition device that can be deposited on a large-area substrate. Further, in the invention of the fourth and fifth aspects of the patent application, since the vapor mask is attached to the mask holder at the end on the substrate side farthest from the evaporation source, the radiant heat from the evaporation source can be suppressed. In addition, -17-201250025 imparts a tension above the thermal stress to the vapor deposition mask, thereby being stably maintained. Further, in the invention of the sixth aspect of the patent application, the substrate is masked by the vapor deposition mask. Since tension is applied to the moving direction, the vapor deposition mask is deflected, and the filming error due to the deflection disappears. Further, in the invention of the seventh aspect of the patent application, even if it is a small vapor deposition mask which is divided into a plurality of sheets, it can be formed on a large substrate, so that a vapor deposition mask can be easily formed. Further, in the invention of the eighth aspect of the patent application, it is possible to achieve a uniform pattern in each of the vapor deposition fields in accordance with the film thickness distribution characteristics of each of the evaporation ports, and to configure the masks to be individually arranged side by side. The vapor deposition mask of the opening portion or the vapor deposition mask can be replaced individually, and the utility model is more excellent in practicability. Further, in the inventions of the ninth and tenth aspects of the patent application, the ribs provided to extend in the relative movement direction of the substrate prevent deformation of the mask holder due to the tension of the vapor deposition mask. Further, the tension of the vapor deposition mask can be maintained, and the support surface of the mask can be firmly supported/joined by the vapor deposition mask by providing the mask mounting surface. Further, in the invention of the eleventh aspect of the invention, the shape of the opening portion for the mask holder is such that the opening area on the evaporation source side is smaller than the opening area on the substrate side, and the restriction can be used for the restriction. The evaporation source side of the opening portion captures a large amount of evaporating particles of the film-forming material evaporated by the evaporation source, thereby reducing the film-forming material adhering to the side surface of the restriction opening portion, and easily attaching the adhering member after the mask holder is exchanged. Peeling/Recycling of Membrane Material 18 - 201250025 Further, in the invention of claim 12, by narrowing the opening width of the evaporation opening portion, for example, when the RGB light-emitting layer is formed into a film, the occurrence of reaching the adjacent position can be prevented. A shadow of the vapor deposition pattern (adjacent to the pixel), and by narrowing the opening width of the evaporation opening as shown above, a large gap between the substrate and the vapor deposition mask can be obtained, or a wider opening for the restriction can be obtained. The inter-part mask is mounted on the support surface, and a temperature control mechanism can be provided in the vapor deposition mask itself to become an excellent distillation apparatus. Further, in the invention of claim 13 of the patent application, the horizontally long diffusing portion is provided in the evaporation source, and the plurality of evaporation ports are arranged side by side, thereby achieving uniform pressure between the plurality of evaporation ports arranged side by side. . Further, when vapor deposition is performed on a large substrate, the pressure in the diffusion chamber may be more uniform, and a plurality of evaporation sources having small diffusion chambers may be arranged side by side in a direction orthogonal to the direction in which the substrates are opposed. Further, in the invention of claim 14, in the vicinity of the evaporation source, a thermal blocking portion such as a cooling member that blocks radiant heat from the evaporation source is disposed (as a temperature control unit provided in the evaporation source) ), the temperature rise of the vapor deposition mask can be suppressed. Further, in the invention of the first and fifth aspects of the patent application, the directivity of the evaporating particles is improved, and the film formation of the evaporating particles ejected from the evaporating port portion is compared with the evaporating particles having low directivity. When the amount of the materials to be used is the same, the scattering angle of the evaporating particles in the effective range of the film formation is reduced as a whole. Therefore, the incident angle at which the evaporating particles are incident on the opening of the vapor deposition mask is also small, and the substrate can be reduced relative to the substrate. The amount of change in the position of the film formation pattern with respect to the fluctuation of the gap between the vapor deposition masks. In the invention according to the seventeenth aspect of the patent application, the introduction portion is protruded from the horizontally long diffusion portion toward the substrate side, and the thermal interruption portion can be disposed in the specific evaporation port. The portion closer to the evaporation source side, even if the thermal blocking portion is disposed between the evaporation ports, the evaporation particles are not adhered to the thermal blocking portion, and the vapor deposition device has high material use efficiency and maintainability. Further, in the invention of claim 18, the vapor deposition film of the film formation pattern determined by the lateral arrangement of the mask openings of the vapor deposition mask is formed by the relative movement direction of the substrate, but the steaming is performed. The mask opening of the mask is an elongated total opening length toward the substrate, and is set to be farther from the center portion of the restricting opening (for example, a position facing the evaporation opening) toward the lateral direction. The longer the distance, the farther the lateral direction is, the lower the vapor deposition rate of the average unit solid angle, but correspondingly, the opening length becomes longer, whereby the film thickness can be made uniform. Further, in the invention of claim 19, after the vapor deposition mask is joined to the mask holder, it is also necessary to provide a correction plate on the substrate side when the film thickness correction is necessary, without replacing the steam. By plating the mask, the film thickness can be made uniform, and the vapor deposition mask of the same slit length is used in the relative movement direction of the substrate from the beginning, and the film thickness is adjusted by correcting the plate. Further, in the invention of claim 20, the interval between the mask openings of the vapor deposition mask deposited on the film formation pattern of the substrate and the direction in which the relative movement of the substrate is orthogonal is determined. The gap between the substrate and the vapor deposition mask, the distance between the vapor deposition mask and the evaporation port portion, and the film formation pattern formation interval in which the vapor deposition film is perpendicular to the relative movement direction of the substrate is determined, and the ratio is set to be equal to The film pattern formation interval is narrower, and the opening size (mask opening width) in the lateral direction orthogonal to the relative movement direction of the mask opening of the vapor deposition mask -20-201250025 is performed by the substrate and the evaporation The gap between the mask, the distance between the vapor deposition mask and the evaporation port portion, and the width of the deposition pattern of the vapor deposition film are determined to be wider than the film formation pattern of the vapor deposition film, thereby making the substrate and the substrate In the vapor deposition mask separation, even if there is a gap between the vapor deposition masks, the position of the film formation pattern is shifted, and the width of the film formation pattern is shifted, and the formation precision of the film formation pattern can be formed with high precision. Further, in the invention of claim 21, the mask holder to which the vapor deposition mask is attached is provided with an exchange chamber that is freely reciprocable from the vapor deposition chamber, so that the mask holder can be easily carried in and out. The stoppage time of the replacement film forming process of the cover holder is shortened, and the operation rate of the vapor deposition device is increased. Further, in the invention of claim 22, the exchange chamber is provided with a cleaning mechanism, whereby the film forming material adhering to the mask holder or the vapor deposition mask can be washed in the vapor deposition device. The mask holder or vapor mask can be easily reused. Further, in the invention of claim 23, the exchange chamber is provided with a material recovery mechanism, and the material can be recycled and reused, for example, as in the invention of claim 11 of the invention, the rib of the holder is covered. The shape is such that the evaporation source side is enlarged, whereby the material is attached to the evaporation source side end portion of the mask holder to make peeling/recycling simpler. Further, in the invention of claim 24, since the evaporating particles from the plurality of evaporating port portions are arranged to overlap each other on the substrate, the vapor deposition rate is increased, and the vapor deposition device having high productivity is obtained. Further, in the invention of claim 25, in the invention of claim 25, the evaporation port portion provided in the opposite direction to the opening portion for the plurality of restriction openings is arranged side by side, whereby the evaporation by the plurality of evaporation ports is evaporated. Since the particle system can be vapor-deposited by one mask opening, the number of mask openings that determine the film formation pattern can be reduced, and the interval between the opening portions of the mask can be widened, so that the mechanical strength of the vapor deposition mask is increased, and the film can be prevented from being prevented. The mask during cleaning is broken or bonded, and the wider mask is mounted on the support surface, so that the bonding of the vapor deposition mask and the mask holder is strengthened and fixed, and in the case of a temperature control mechanism, The installation area of the cooling medium path or the heat pipe of the vapor deposition mask is large, and the temperature rise of the vapor deposition mask due to the radiant heat from the evaporation source can be prevented. Further, in the invention of claim 26, by providing the second vapor deposition mask, the first vapor deposition mask is used to suppress the incidence of the radiant heat from the evaporation source, and further the second vapor mask may be Since the opening pattern is formed into a film, it is possible to perform vapor deposition with higher precision while suppressing an increase in the temperature of the second vapor deposition mask. Further, in the invention of claim 27, it is a vapor deposition device which can more reliably prevent shadows and perform high-precision vapor deposition. Further, in the invention of claim 28, the mask holder and the mask holder having the scattering restricting portion provided with the restricting opening portion joined thereto are provided, as the case may be. The temperature control mechanism here suppresses the temperature rise of the vapor deposition mask and maintains the temperature constant. Therefore, the second vapor deposition mask disposed between the vapor deposition mask and the substrate is less likely to rise in temperature. Therefore, it can be formed of a material having a large coefficient of linear expansion. Further, in the invention of claim 29, when the second cover-22-201250025 cover is formed by electroforming, a high-precision mask opening portion can be formed, thereby achieving higher film forming precision. Pattern evaporation device. Further, in the invention of claim 30, by widening the opening interval of the first vapor deposition mask, the radiant heat incident from the first mask opening portion can be reduced, and the second mask can be further suppressed. Thermal expansion. Further, even if the opening intervals of the first vapor deposition mask are formed to be the same, since the second mask opening is narrowed in width, a high-definition film formation pattern can be vapor-deposited. Further, in the invention of claim 31, the evaporation device formed as an organic material is more practical. Further, in the invention of claim 32, the preferred vapor deposition method exhibits the aforementioned effects. [Embodiment] The function of the present invention will be described based on the drawings, and an embodiment of the present invention which is considered to be suitable will be briefly described. In the first embodiment, the film formation material evaporated by the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 which is a scattering restriction portion, and passes through the mask opening portion 3 of the vapor deposition mask 2 . Deposited on the substrate 4 to form a vapor deposited film of the film formation pattern determined by the vapor deposition mask 2 on the substrate 4, in which case the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, and The vapor deposition mask 2 or the evaporation source 1 is configured to relatively freely move the substrate 4 while maintaining the separation state, so that the substrate 4 is relatively moved, thereby being wider than the vapor deposition mask 2 itself. In the range of -23-201250025, a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4. Further, a mask holder is provided between the vapor deposition mask 2 and the evaporation source 1. 6. The mask holder 6 has a scattering restricting portion that defines the opening portion 5 for restricting the scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source 1, and the opening portion 5 for restricting The evaporating particles of the evaporation port 8 in the adjacent or separated position do not pass, that is, The vapor deposition mask 2 is separated from the substrate 4, and the film formation patterns are prevented from overlapping. In addition, since the vapor deposition mask 2 is joined and attached to the mask holder 6 constituting the scattering regulation portion, heat incidence from the evaporation source 1 is suppressed, and the mask holder 6 or the vapor deposition mask is suppressed. The temperature of the cover 2 rises, and even if the vapor deposition mask 2 is separated from the substrate 4, it is joined to the mask holder 6, whereby the heat of the vapor deposition mask 2 is transmitted to the mask holder 6. Therefore, the temperature maintaining function of maintaining the vapor deposition mask 2 at a certain temperature is improved. Further, for example, if at least one of the mask holder 6. or the vapor deposition mask 2 is provided with a temperature control mechanism for maintaining the temperature of the vapor deposition mask 2, the mask holder 6 or the vapor deposition is provided. The temperature rise of the mask 2 is further suppressed, and the temperature holding function for maintaining the vapor deposition mask 2 at a constant temperature is further improved. Therefore, the mask holder 6 having the scattering restricting portion has a function of restricting the scattering direction of the evaporated particles. At the same time, the temperature maintaining function is also achieved, the temperature rise of the vapor deposition mask 2 can be suppressed, and the vapor deposition mask 2 can be maintained at a constant temperature, and deformation of the vapor deposition mask 2 due to heat is less likely to occur. -24-201250025 Therefore, the substrate 4 is shielded from the vapor deposition mask 2, and the mask holder 6 and the evaporation source 1 to which the vapor deposition mask 2 is attached are kept in a separated state from the vapor deposition mask 2. With respect to the relative movement, the shovel film of the film formation pattern by the vapor deposition mask 2 is continuously formed in the relative movement direction, and even if it is smaller than the vapor deposition mask 2 of the substrate 4, the vapor deposition film is formed in a wide range. Further, the vapor deposition device capable of performing high-precision vapor deposition is formed by the overlap of the deposition pattern or the deformation due to heat due to the incidence of the evaporation port portion 8 from the adjacent or separated position. . Further, by narrowing the opening width Φ X of the evaporation port portion 8 of the evaporation source 1, the shadow SH of the film formation pattern (the amount of protrusion of the side end inclined portion of the vapor deposition film) can be further suppressed, and by the direction of relative movement The opening of the evaporation port portion 8 is lengthened to increase the evaporation rate. [Embodiment 1] A specific embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a general view of a schematic device. In the present embodiment, evaporation is performed in a vapor deposition chamber 7 (for example, in the vacuum chamber 7) which is a reduced-pressure ambient gas, and a film-forming material (for example, an organic material for manufacturing an organic EL device) is disposed. a vapor deposition mask 2' of the mask opening portion 3 through which the evaporating particles of the film forming material evaporated by the plurality of evaporation ports 8 arranged in parallel by the evaporation source 1 are provided by the plurality of evaporations The evaporation particles scattered by the mouth portion 8 are deposited on the substrate 4' positioned to be separated from the vapor deposition mask by the mask opening portion 3, and the vapor deposition film of the film formation pattern determined by the vapor deposition mask 2 is deposited. The shaped holder -25-201250025 is formed on the substrate 4, and is configured such that a mask holder 6 is disposed between the substrate 4 and the evaporation source 1, and the mask holder 6 is configured to be separated or adjacent The scattering restricting portion of the restricting opening portion 5 through which the evaporating particles of the evaporating port portion 8 at the position does not pass, and the vapor deposition mask 2 disposed to be separated from the substrate 4 are joined to each other and attached to the mask holder 6 , a mask holder 6 and an evaporation source 1 with a vapor deposition mask 2 attached thereto The substrate 4 is configured to be relatively movable in a separated state from the vapor deposition mask 2, and the vapor deposition mask is continuously formed on the substrate 4 in a larger range than the vapor deposition mask 2 by the relative movement direction. The vapor deposition film of the film formation pattern determined by 2. In other words, the vapor deposition is performed by evaporating particles from the plurality of evaporation ports 8 so as to be vapor-deposited on the substrate 4 having a large area, and the opening portion 5 is restricted from being adjacent or The incidence of the evaporation port portion 8 at the separation position prevents the film formation patterns from overlapping even if the vapor deposition mask 2 and the substrate 4 are separated. Further, in the present embodiment, the plurality of evaporation sources 1 may be arranged side by side and the respective evaporation ports 8 may be arranged side by side, but a configuration in which a plurality of evaporation ports 8 are arranged side by side in a horizontally long evaporation source 1 is provided for the above-described formation. The evaporating particle generating unit 26 that heats the film material and the horizontally long diffusing portion 27 that diffuses the evaporating particles generated by the evaporating particle generating unit 26 to uniformize the pressure constitute the evaporation source 1 and the horizontally long diffusion The portion 27 is provided with the above-described evaporation port portion 8 side by side in the above-described lateral plural. Further, for example, the evaporating particle generating portion 26 C 坩埚 26) which is exchanged by the automatic enthalpy switching mechanism accommodates the film forming material, and the evaporating particles which are heated and evaporated by the crucible 26 are temporarily stopped to uniformize the pressure. In the horizontally long cross-shaped horizontal -26-.201250025 long diffusing portion 27, a plurality of laterally adjacent portions of the horizontally long diffusing portion 27 are arranged side by side in the lateral direction and are orthogonal to the relative moving direction. In the slit-shaped opening portion having a narrow width, a plurality of the evaporation port portions 8 are disposed, and the evaporation port portions 8 which are arranged side by side in the lateral direction are provided in the evaporation source 1 to protrude toward the horizontally long diffusion portion 27 The front end of the introduction portion 28 is provided with a thermal blocking portion 19 that blocks the heat of the evaporation source 1 between the periphery of the horizontally long diffusion portion 27 or the introduction portion 28. The thermal blocking portion 19 may be a heat shielder. In the present embodiment, a cooling plate 9D is used, and a media path for supplying a cooling medium is provided. The cooling medium is deprived of heat from the evaporation source 1 and passes through the media path to set the heat. The heat exchange unit 2 0D is exchanged to improve the heat shielding effect. Further, in the film formation, the evaporated particles adhere to the vapor deposition mask 2 or the mask holder 6 in succession, and if used for a long period of time, the film formation pattern is affected, so that the vacuum chamber 7 passes through the unillustrated The gate valves are arranged side by side with the exchange chamber 16 (for example, the exchange chamber 16), and the vacuum chamber 7 is freely taken out of the mask holder 6 to which the vapor mask 2 is attached, whereby the mask holder 6 can be easily performed. When the loading and unloading is performed, the stoppage time of the film forming process with the exchange of the mask holder 6 is shortened, and the operating rate of the vapor deposition device is increased. Further, the exchange chamber 16 is provided with a cleaning mechanism for the mask holder 6 to which the vapor deposition mask 2 is attached, and the deposited film formation material is peeled off, and the material recovery mechanism 17 recovers the film formation material. Further, it is reused and washed to remove the film-forming material or fine particles remaining on the surface of the mask holder 6 to which the vapor deposition mask 2 is attached after the film-forming material is peeled off. In addition, the mask holder 6 having the vapor deposition -27 - 201250025 mask 2 may be configured such that the film-forming material to be adhered is not peeled and recovered, and is washed by a cleaning mechanism, or may be formed to be attached. The mask holder 6 of the vapor deposition mask 2 is recovered and exchanged. In addition, the present embodiment is also effective for forming the substrate 4 into the transparent substrate 4 and using a plastic film, and manufacturing a plurality of light-emitting layers composed of organic substances on the plastic film 4 in a roll-to-roll manner. In the method of the organic EL display of the anode layer, the light-emitting layer is vapor-deposited by a vacuum deposition method. Fig. 2 is a perspective view of the evaporation source 1. The evaporation source 1 is provided with an introduction portion 28 that is formed to protrude from the horizontally long diffusion portion 27 at the front end portion. The volume of the horizontally long diffusing portion 27 is sufficiently increased with respect to the opening surface of the evaporation port portion 8 ejected by the evaporating particles, whereby the evaporating particles heated in the crucible 26 are diffused in the laterally long diffusing portion 27, and the pressure is formed into The uniformity is such that the discharge pressure ejected from the evaporating particles from the respective evaporation ports 8 is uniform. Moreover, the length of the lead-in portion 28 that protrudes from the evaporation port portion 8 toward the substrate 4 side is longer than the width of the introduction portion 28 in the lateral direction orthogonal to the relative movement direction of the substrate 4, While increasing the directivity of the evaporating particles in the lateral direction orthogonal to the relative movement direction of the substrate 4, the opening of the evaporation port portion 8 is provided wide in the direction of relative movement with the substrate 4, whereby the evaporation rate is high and Further, as shown in Fig. 3, the introduction portion 28 can be disposed in the horizontally long diffusion portion 27, and at this time, the evaporation material adheres to the thermal interruption portion. 28 - 201250025 Therefore, it is preferable that the thermal blocking portion 19 is not disposed between the evaporation port portions 8. Further, when the internal angle R of the opening shape of the evaporation port portion 8 is large, the generation of evaporating particles from the corner portion is reduced, and the evaporation rate is lowered. Therefore, the shape of the opening of the evaporation port portion 8 is It is preferable that the internal angle R is small. Specifically, the length of the evaporation port portion 8 in the direction of relative movement with the substrate 4 ( When <i>y) is 30 mm and the length (Φ X ) in the lateral direction orthogonal to the substrate 4 is 2 mm, the evaporation port portion 8 having no internal angle R and the evaporation port portion having the internal angle R of 1 mm compared to. The evaporation rate is approximately proportional to the opening area of the evaporation port portion 8. Therefore, when the opening area is compared, the opening area of the inner corner R is 60 mm2, and the inner angle R is 1 mm (56 + 7 Γ). Mm2, reducing evaporation rate by about 1.4%. Further, when the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, when the film is formed, as shown in Fig. 4, an inclined portion (SH) which is an inclined portion of both end portions of the vapor deposition film is generated. When the gap between the substrate 4 and the vapor deposition mask 2 is G and the evaporation port portion 8 is: the width of the opening in the lateral direction is Φ X , and the distance between the evaporation port portion 8 and the vapor deposition mask 2 is TS. In the following formula (!), the opening width Φ 蒸发 of the evaporation port portion 8 is set to be smaller so that the gap PP of the vapor deposition film 8 that is not adjacent to the shadow SH is not set, and the gap G is set to Larger. [Number 4] SH= φ X XG/T S < Ρ Ρ (1) Specifically, when the shadow SH is set to 0.03 mm or less, the TS is set to 100 to 300 mm. The above φ χ is set to -29 to 201250025 by 0.5 to 3 mm, and the gap 〇 is ensured to be 1 mm. the above. For example, when the TS is set to 100 mm and the above φ χ is set to 3 mm, the gap G is 1 mm, and when the TS is set to 100 mm and the above Φ is set to be as small as 〇6 mm, the gap G can be ensured to be 5 mm. Further, the TS may be set to 300 mm, the φ X may be set to 3 mm, the gap G may be set to 1 mm, and the shadow SH may be reduced to 0.01 mm, which corresponds to a more high-precision film formation pattern. Further, when the evaporation source 1 having the evaporation opening portion 8 having a narrow width in the lateral direction orthogonal to the relative movement direction of the substrate 4 is arranged side by side in the relative movement direction of the substrate 4, even if the substrate 4 is steamed The plating mask 2 is vapor-deposited in a separated state, and the evaporation rate can be increased while suppressing the shadow. However, the positional deviation of the film formation pattern is the sum of the displacements of the respective evaporation port portions 8 to be disposed on the substrate. The number of the evaporation port portions 8 of the evaporation source 1 in the relative movement direction of 4 is preferably minimized. Therefore, in the present embodiment, as shown in Fig. 2, the evaporation in the relative movement direction of the substrate 4 is disposed. One of the mouth portions 8 is formed, and the evaporation port portion 8 is formed in a slit shape that is elongated toward the relative movement direction of the substrate 4 and has a narrow width in the lateral direction orthogonal thereto. Specifically, the film thickness (□) at the time of film formation is expressed by the vapor deposition rate (A / s) / moving speed (mm / s) X of the vapor deposition mask slit length (mm). The width φ 前述 of the lateral opening of the evaporation port portion 8 is set to 1 mm, and as shown in Fig. 5, the length φ γ of the relative movement direction of the substrate 4 is 1 mm (Fig. 5 (a)) and 60 mm (the Figure 5 (b)) Comparison of the case of film formation. The film thickness distribution evaporated on the substrate 4 -30 - 201250025 by the evaporation port portion 8 is formed into a 20th power distribution of cos0 which approximates the cosine law. When the vapor deposition rate at the relative position of the evaporation port 8 is iA/s and the moving speed is 1 mm/s', the length of the vapor deposition mask slit is set to 100 mm, and the film after film formation is conveyed. When the thickness is Φ y of 1 mm (Fig. 5 (a)), it is about 83.3 □, and if the target film thickness of, for example, the shovel film is 400 A, the moving speed becomes about 0.21 mm/s. However, in the case where Φ y is 60 mm (Fig. 5 (b)), the mouth portion 8 is evaporated. Since <i»y is 60 times as compared with (Fig. 5(a)), the incident angle 0b of the evaporated particles deposited at a certain point a and b on the substrate 4 is 60 times 0a. Therefore, similarly, when the target film thickness is set to 400 A, the moving speed is also about 60 times that of about 12.5 mm/s, and the productivity is improved. However, if it is rigorous, the evaporation rate in the effective range of film formation at 60 mm is not <l> y is 60 times of 1 mm, but the center of the center is more symmetrical toward the end portion, and the evaporating portion 8 is ejected toward the end portion, and the number of evaporating particles scattered in the space for the restriction opening portion 5 is reduced as compared with the center portion. Therefore, the evaporation rate will decrease. Specifically, the evaporation rate of the evaporating particles ejected from the c-site of the evaporation port portion 8 of Fig. 5(a) is deposited on the substrate 4 at a point where it is higher than the evaporation port portion of Fig. 5(b). The evaporating particles ejected at the d point of 8 are vapor-deposited at the point b in the same manner as the point a on the substrate 4, and the vapor deposition rate is higher. Therefore, as shown in Fig. 6, the film thickness distribution in the effective range of film formation is (b) wider. Specifically, if <i>y is 60mm and When the thickness of the slit is 60 times as large as 1×, the film thickness is thinner than the case where the vapor deposition rate, the moving speed, and the vapor deposition mask opening -31 - 201250025 are the same length, and the thickness is Φ y 60 mm. About 4.10/〇. Further, the mask opening portion 3 of the vapor deposition mask 2 of the present embodiment is formed side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4 as shown in Figs. 7 and 8 . In a plurality of configurations, each of the mask openings 3 is formed in a slit shape that is elongated in the relative movement direction, or a plurality of openings are arranged side by side in the relative movement direction, and the total opening in the relative movement direction is formed. The length is formed to be longer than the lateral opening. In other words, the mask opening portion 3 of each row of the vapor deposition mask 2 can be formed as a slit-shaped opening portion that is elongated in the relative movement direction, and the mask opening portion is formed in order to increase the rigidity of the vapor deposition mask 2. 3, a small opening such as a slit hole or a small hole which is elongated in the relative movement direction may be scattered in this direction to ensure a wide total opening length (total opening area). Further, the opening slit of the vapor deposition mask 2 or the total opening length is set so as to be longer as the center portion is further toward the lateral direction, and the farther from the center portion, the lower the vapor deposition rate, but the film thickness of the vapor deposition film is Be a certain way to set. For example, as shown in FIG. 9 and FIG. 10, when the scattering angle of the evaporating particles at a certain position X in the lateral direction (X-axis direction) orthogonal to the relative movement direction of the substrate 4 is 0, at the position of X, An approximate distribution obtained by multiplying the cosine law ( cos 0 ) by the power factor η, and the film thickness distribution of the relative movement direction (the z-axis direction) of the substrate 4 is determined, and the mask opening portion 3 of the vapor deposition mask 2 is formed. The formation length is set such that the center portion is a boundary and the left and right symmetry changes in a long shape. -32-201250025 Specifically, the size of the evaporation port portion 8 is, for example, the evaporation opening opening width φ χ is set to 1 mm, and the evaporation opening portion slit length 0 y is set to 60 mm, which is orthogonal to the relative movement direction of the substrate 4 When the film thickness distribution is close to the 20th power distribution of c〇S0, the film thickness distribution shown in Fig. 8 is obtained. When the incident angle of the evaporating particles to the vapor deposition mask 2 is increased, the influence of the above-described error becomes large. Therefore, when the film thickness is as thin as the center 8 is used, the film is formed at the time of film formation, -30 to + in the X-axis direction. The width of 60 mm of 60 is the effective range of film formation by one nozzle. When the length of formation of the substrate 4 in the relative movement direction at the mask position facing the opening of the evaporation opening is set to 100 mm, vapor deposition is performed at both ends of the film forming effective range, that is, at positions of -30 and +30. The length of the opening of the mask is about 1 46 mm. As shown in Fig. 10, the farther from the center toward the both ends, the longer the opening of the mask is longer and more symmetrical. Further, as shown in Fig. 11, the film thickness correction plate 29 is disposed on the substrate 4 side of the vapor deposition mask 2 by the gap G in which the substrate 4 is separated from the vapor deposition mask 2, thereby masking the vapor deposition After the cover 2 is joined to the mask holder 6, even if it is necessary to perform film thickness correction, the film thickness of the vapor deposition film can be corrected without reattaching the vapor mask 2. Similarly, the mask opening portion 3 of the vapor deposition mask 2 is not formed so as to be longer toward the left and right ends, and is formed into a slit shape which is elongated toward the relative movement direction of the substrate 4, and is formed into the same slit. As shown in Fig. 1, the film thickness correction plate 29 which is formed by forming the opening in a predetermined range and which is closed is fixed, and is formed into a slit opening length shown in Fig. 10, as shown in Fig. 12. As shown in the figure, the vapor deposition mask to be vapor-deposited on the deposition pattern of the substrate 4 is determined, and the gap between the mask opening portion 3 of the second substrate and the substrate-33-201250025 of the substrate 4 is orthogonal to the moving direction. Compared with the pitch of the vapor deposition film formation pattern, the difference between the size of the corresponding substrate 4 and the vapor deposition mask 2 and the large difference in the distance TS between the evaporation port portion 8 and the vapor deposition mask 2 are set. Specifically, as shown in Fig. 12, the distance from the mask position facing the center of the evaporation opening of the evaporation source to the center of the mask opening is to the position of the substrate opposite to the center of the opening of the evaporation opening to The distance Px of the founding center is multiplied by the component of α / (l + α) (at this time α / G ) becomes smaller. Therefore, for example, when the distance TS is 100 mm and the G is 1 mm, the α system is 100, and α / (l + α) is about 0.99. Therefore, for example, when Ρχ is set to 10 mm, the 9.9 system 9.9 mm' ΜΡχ is made smaller than Ρχ. That is, since the substrate 4 is separated from the vapor deposition mask 2, the size of the gap G between the plate 4 and the vapor deposition mask 2 and the size of the distance TS between the evaporation port portion 8 and the mask 2 are covered by vapor deposition. The position of the vapor deposition film deposited on the substrate 4 by the mask 3 of the cover 2 is laterally shifted. Considering the offset, the opening pitch of the vapor deposition mask 2 is set to be narrower than that of the case. In the same manner, as shown in Fig. 13, the vapor deposition mask opening is such that when the opening width φ 蒸发 of the evaporation opening portion 8 is larger than the mask opening ,, the corresponding substrate is used. 4 The size of the gap G of the vapor deposition mask 2 is wider than the size of the distance TS of the vapor deposition mask 2 from the vapor deposition mask 2. Specifically, the width of the mask opening is ( χ Ρ Ρ Ρ 口 口 = = = = = = = = = = = = = = = = = TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS TS 1 + -34- .201250025 α )) indicates (at this time α = TS/ G). For example, when the vapor deposition pattern width P is set to 0.1 mm, TS is set to 100 mm, and φ X is set to 1 mm, the mask opening width Mx is about 0.126 mm when the width Mx is 3 mm, and about G when the thickness is 5 mm. 0.143mm, which is wider than the width P of the vapor deposition pattern. Further, in the present embodiment, the ribs 24 extending in the relative movement direction of the substrate 4 are provided, and the front end surface of the ribs 24 on the substrate 4 side is provided with a vapor deposition cover provided in each of the restriction opening portions 5. The mask supported and joined by the cover 2 mounts the support surface 23. For example, as shown in FIG. 14, when the R pixel of the light-emitting layer is vapor-deposited, a mask mounting support surface may be provided for the other G and B pixel widths and their intervals, 23, because the substrate 4 and the shovel mask 2 The gap G is separated, so it can be ensured to be wider. Specifically, the mask mounting support surface 23 in the configuration in which the substrate 4 and the vapor deposition mask 2 are in close contact with each other is a vapor deposition film gap PP for vapor deposition of RGB pixels and a vapor deposition pattern width P, and is 2P + . 3PP said. Further, since the gap G is provided, the center of the substrate 4 facing the evaporation port portion 8 causes the difference between the position of the most end of the vapor deposition pattern and the position of the edge of the mask opening 3 of the vapor deposition mask 2. A. A is represented by G (Px + P/2-0x/2) / (TS + G), and the mask mounting support surface 23 is wider than the case where the substrate 4 and the vapor deposition mask 2 are in close contact with each other. Share. More specifically, for example, when the vapor deposition pattern width P is set to 0.1 mm and the steaming blade film interval PP is set to 〇.05 mm, the mask mounting support surface 23 when the substrate 4 and the vapor deposition mask 2 are in close contact with each other It becomes 0.35mm. However, when the substrate 4 and the vapor deposition mask 2 of the present embodiment are separated from each other, for example, when the TS is set to 200 mm, the above φ χ is set to 1 mm, and the Px is set to 30 mm, the mask mounting support is used. The surface 23 is about 0.64 mm when the gap G is 1 mm, and is about 1.79 mm when the gap G is 5 mm, and the area where the vapor deposition mask 2 is superposed and spot-welded can be sufficiently ensured. [Embodiment 2] A specific embodiment 2 of the present invention will be described based on the drawings. As shown in Fig. 15, the plurality of evaporation ports 8 are arranged side by side for each of the restriction openings 5, and the evaporated particles from the plurality of evaporation ports 8 are superposed on the substrate 4, whereby the vapor deposition rate can be increased. Specifically, in the configuration in which the three evaporation ports 8 are disposed for each of the restriction openings 5, the evaporated particles evaporated by the evaporation ports 8 in the center are deposited on the substrate 4 through the mask opening 3 . The evaporated particles evaporated by the adjacent evaporation port portions 8 are deposited at the same position on the substrate 4 through the adjacent mask openings 3. Since the portions of the plurality of evaporation ports 8 are arranged side by side, the amount of the liquid crystals to be stacked on the substrate 4 is increased, and the vapor deposition rate is increased. Further, the liquid crystal cells are arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate 4. When the accuracy of the arrangement position of the evaporation ports 8 is good, the vapor deposition rate is the same, but it may be further suppressed by setting the opening width Φ 各 of each of the evaporation ports 8 to 1/3. The composition of the shadow SH of the vapor deposited film. The interval of the evaporation port portion 8 for the vapor deposition film to overlap on the substrate 4 is determined by the following formula (5). -36- 201250025 [Number 5] Ρ φ x = PMx X (G +TS) /G...(5) (P φ X == interval between evaporation ports, PMx = interval of mask opening of vapor deposition mask) , G=··the distance between the substrate and the vapor deposition mask, TS=the distance between the evaporation port and the vapor deposition mask. Specifically, when S' is set to 〇5mm, G is 4mm, and TS is 200mm. , Ρφχ becomes 25.5mm. [Embodiment 3] A specific embodiment 3 of the present invention will be described based on the drawings. The evaporation port portions 8 disposed in a state of being opposed to the restriction opening portion 5 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, whereby evaporation by evaporation of the plurality of evaporation port portions 8 is performed. Since the particle system can be vapor-deposited into the film formation pattern at equal intervals by the mask opening portion 3, the number of the mask openings 3 for determining the film formation pattern can be reduced, and the pitch of the mask opening portion 3 can be widened. The width of the vapor deposition material mask portion can be widened, the mechanical strength of the vapor deposition mask 2 is increased, the damage or adhesion of the mask during cleaning can be prevented, and the mask mounting support surface 23 can be ensured to be wider. Therefore, the joining of the vapor deposition mask 2 and the mask holder 6 can be performed more strongly. Specifically, as shown in FIG. 16 , when the evaporation port portion 8 disposed in the opposing state with the restriction opening portion 5 is an odd number (3), or as shown in FIG. In the case where the number of the evaporation port portions 8 disposed in the opposing state in the restriction opening portion 5 is an even number (2), the intervals of the mask opening portions 3 in the restriction opening portion 5 are equal. The number of the film opening patterns in the -37-201250025 restriction opening portion 5 divided by the number of the evaporation port portions 8 can be reduced by the number of the mask openings 3. In addition, as shown in Fig. 16, the odd number (3) of the evaporation port portions 8' are disposed in the opposite direction to the restriction opening portion 5, and the number of film formation patterns in the restriction opening portion 5 can be divided. In the configuration in which the number of the mask openings 3 is reduced by the number of the evaporation port portions 8, as shown in Fig. 18, since the interval between the mask openings 3 is formed to be 1/2, the film formation pattern interval is also It can be formed into 1/2, and a film formation pattern with higher precision can be vapor-deposited. Further, as shown in FIG. 19, since the number of the mask openings 3 is reduced, a media path or a heat pipe may be disposed on the surface of the mask having the mask opening 3, and the surface temperature of the vapor deposition mask 2 may be set. The ability to maintain a certain level is further improved, and as shown in Figure 20, 'not to increase the number of media or heat pipes, but to increase the surface area in contact with the vapor-deposited mask 2' The temperature of 2 is kept constant. Further, the mask holder 6 may be provided with a temperature control mechanism to further maintain the temperature of the vapor deposition mask 2 attached to the mask holder 6. The evaporating particles evaporated by the plurality of evaporation ports 8 pass through the same mask opening 3, and the interval between the evaporation ports 8 for vapor deposition at a desired film formation pitch is determined by the following formula (5). [Number 6.] Ρ φ X = Ρ Μ XX (G + TS) / G (5) (Ρ φ X = interval between evaporation ports, ΡΜχ = interval between mask openings of the vapor deposition mask, G = Distance between the substrate and the vapor deposition mask, TS = distance between the evaporation port and the vapor deposition mask) -38- 201250025 Specifically, when PMx is set to 0.5 mm and G is set to 200 mm, ΡφΧ becomes 25.5 mm. If the arrangement is 3, the pitch of the opening of the mask becomes three times, so PMx becomes | Further, as shown in Fig. 21, the opening of the mask can be enlarged by reducing the number of the opening portions 3 of the cover. In the case where the film formation pattern shown in the second embodiment is overlapped on the substrate 4, the opening portion 5 is formed such that the opening portion B of the mask can be closed at the edge of the evaporation port portion disposed in the opposite state. Increase the mask mounting support surface 23. [Embodiment 4] A fourth embodiment of the present invention will be described with reference to the drawings. As shown in Fig. 22, a second vapor deposition mask 1 is disposed in close contact with the substrate 4 between the substrate 4 and the evaporation chamber. Hey. In the embodiment, the second vapor deposition mask 10 formed as the evaporation source 1, the mask holder 6 and the cover 2 and the second vapor deposition mask 10, and the substrate 4 are relatively movable in the separated state. Between the substrate 4 and the evaporation source 1 and the relative movement of the mask vapor deposition mask 2 and the substrate 4 may be performed. The mask opening portion 11 of the second vapor deposition mask 10 defines the arrangement of the film formation pattern 'the aforementioned masking of the first vapor deposition mask 2 on the evaporation source 1 side of the second vapor mask 1 The width is set to be the same as or different from the second vapor deposition mask 10, TS evaporation port portion! 1. 5 mm. Since the mask pattern is shielded, the mask 2 is placed in a shape or a portion where the plug is placed in the first place. Therefore, the first vapor deposition is formed, but the relative movement of the vapor mask 2 is maintained. One becomes the final decision and is also located in the front cover opening 3 wider and wider -39- 201250025. Further, the interval in which the mask opening 1 1 of the second vapor deposition mask 10 in the restriction opening 5 is formed is wider than the interval in which the mask opening α portion 3 of the first vapor deposition mask 2 is formed. In the present embodiment, the second vapor deposition mask 10 is placed in close contact with the substrate 4, whereby the shadow SH caused by the first vapor deposition mask 2 does not occur. Further, the radiant heat from the evaporation source 1 and the heat conducted by the evaporating particles are absorbed in the first vapor deposition mask 2, and the radiant heat emitted from the first vapor deposition mask 2 is transmitted to the second vapor deposition mask. 10, therefore, the amount of heat incident on the second vapor deposition mask 1 大幅 is greatly reduced, and the thermal expansion of the second vapor deposition mask 10 can be suppressed. Further, it is also possible to prevent the temperature of the first vapor deposition mask 2 from rising even if the mask holder 6 is provided with a cooling mechanism. Therefore, in the present embodiment, the first vapor deposition mask 2 is configured. The heat from the evaporation source 1 does not propagate to the second vapor deposition mask 1 , and the Invar alloy material has a small coefficient of linear expansion so that the vapor deposition pattern incident on the second mask opening portion 1 1 does not shift. Formed, the mask opening 3 is formed by etching. Since the second vapor deposition mask 1 is provided with the first vapor deposition mask 2, the incidence of heat is greatly suppressed. Therefore, even if nickel or the like having a large linear expansion coefficient is formed, thermal expansion does not occur, and as a result, the final decision is made. In the vapor deposition film of the film formation pattern, an electroforming method in which the mask opening portion 11 can be formed with high precision can be used. Further, as shown in Fig. 23, the plurality of evaporation ports 8' are arranged side by side for each of the restriction openings 5, and the evaporation rate can be increased by the evaporating particles from the plurality of evaporation ports 8 on the substrate 4. In the configuration, 'the production and mounting accuracy or thermal expansion during heating of the evaporation source 1 is the cause'. The gap G between the substrate 4 - 40 - 201250025 and the vapor deposition mask 2 , and the distance TS between the evaporation port portion 8 and the vapor deposition mask 2 The distance between the evaporation ports 8 in the lateral direction orthogonal to the relative movement direction of the substrate 4 is changed, whereby the evaporated particles from the plurality of evaporation ports 8 cannot be correctly superposed on the substrate 4, and the film formation pattern is formed. Further, the second vapor deposition mask 10 is disposed in close contact with the substrate 4 to form a film formation pattern of the second mask opening portion 11. Therefore, the vapor deposition device can accommodate the above-described positional shift. However, the present invention is not limited to the embodiments 1 to 4, and the specific configuration of each constituent element can be appropriately designed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic front view showing a main portion of the present embodiment as a cross section. Fig. 2 is a perspective view showing the evaporation source of the present embodiment. Fig. 3 is a perspective view showing another example of the evaporation source of the embodiment. Fig. 4 is a view showing the width of the opening of the evaporation port of the evaporation source disposed in the horizontally long diffusion portion by narrowing the introduction portion of the present embodiment, thereby suppressing the shadow of the vapor deposition film and thereby increasing the gap. Illustrating. Fig. 5 is a cross-sectional view showing a main portion of the present embodiment. Fig. 6 is a view showing a slit of the evaporating port portion shown in Fig. 5 which is elongated in the Y-axis direction and a Y-axis which is not for this purpose. Different graphs of the film thickness distribution in the direction - 41 - 201250025 Fig. 7 is an enlarged plan view showing the vapor deposition mask of the present embodiment. Fig. 8 is a plan view showing an enlarged view of another example of the vapor deposition mask of the present embodiment. Fig. 9 is an explanatory view showing a scattering angle 0 of the evaporated particles at a certain position X in the present embodiment. Fig. 10 is a view showing the distribution of the film thickness distribution according to the present embodiment in accordance with the cosine law, and according to this, the mask opening length of the mask opening is corrected so as to be longer as the center portion is longer in the lateral direction. 11 is an enlarged plan view of the film thickness correcting plate of the present embodiment. FIG. 12 is an explanatory view showing that the lateral forming pitch of the mask opening portion of the vapor deposition mask of the present embodiment is slightly narrower than the film forming pattern pitch. . Fig. 13 is an explanatory view showing that the width of the opening of the mask opening portion of the vapor deposition mask of the present embodiment is slightly wider than the width of the film formation pattern. Fig. 14 is a view showing a wide view of the mask mounting support surface of the rib portion between the restricting opening portions of the mask holder of the present embodiment. Fig. 15 is an explanatory view showing a state in which the evaporated particles from the plurality of evaporation ports in the second embodiment are superposed on the substrate and vapor-deposited. Fig. 16 is an explanatory view showing that an odd number of evaporation ports are provided in the restriction opening portion of the third embodiment, and the number of the opening portions of the mask can be reduced. Fig. 17 is an explanatory view showing that an even number of evaporation ports are provided in the restriction opening portion of the third embodiment, and the number of the mask openings can be reduced. Fig. 18 is a view showing a configuration in which an odd number of evaporation ports are arranged in the restriction opening portion of the third embodiment shown in Fig. 6, and the interval between the mask openings 42-201250025 is set to 1/1. At 2 o'clock, the film formation pattern interval can also be set to 1/2. Fig. 19 is an explanatory view showing the arrangement of a media path or a heat pipe between the number of mask openings of the mask opening portion of the third embodiment. Fig. 20 is an explanatory view showing that the contact area of the media path or the heat pipe and the vapor deposition mask shown in Fig. 19 can be increased. Fig. 21 is an explanatory view showing that the mask mounting support surface can be widened by reducing the number of mask openings of the third embodiment. In the fourth embodiment, the first vapor deposition mask in the restriction opening portion of the fourth embodiment (the embodiment in which the second vapor deposition mask is provided) has the same number of mask openings as the second vapor deposition mask, and the interval is formed. Different illustrations. Fig. 23 is an explanatory view showing three evaporation ports in the restricting opening portion of the fourth embodiment (the embodiment in which the second vapor deposition mask is provided). [Description of main component symbols] 1 : evaporation source 2 : vapor deposition mask 3 : mask opening 4 : substrate 5 : restriction opening 6 : mask holder 7 : vapor deposition chamber (vacuum chamber) 8 : evaporation Mouth 9D: Cooling plate-43-201250025 ίο: Second vapor deposition mask 1 1 : Second mask opening portion 16: Exchange chamber 17: Material recovery mechanism 1 9 : Thermal blocking portion 20D: Heat exchange portion 23: Mask mounting support surface 24: rib portion 26: evaporating particle generating portion (坩埚) 27: horizontally long diffusing portion 28: evaporating port portion forming protruding portion 29: film thickness correcting plate Φ X : opening width G: gap MPx: Form spacing
Mx :開口尺寸 P :成膜寬幅 PP :與蒸發膜的間隔 Ρχ :成膜圖案形成間隔 SH :陰影 TS :距離 -44 -Mx : opening size P : film width PP : spacing from the evaporation film Ρχ : film formation pattern formation interval SH : shadow TS : distance -44 -