TW201305372A - Vapor-deposition device and vapor-deposition method - Google Patents

Abstract

The purpose of the present invention is to provide a vapor-deposition device and method whereby even a small vapor-deposition mask can be used to deposit a patterned film over a wide area by moving a substrate relative thereto at a separation therefrom. Said vapor-deposition device and method also prevent film-pattern overlap, minimize incident radiant heat from an evaporation source, and despite the configuration in which the substrate and vapor-deposition mask are moved relative to each other at a separation from each other, allow fast, precise vapor deposition. A mask holder (6) that has scatter-control parts provided with control openings (5) is provided between the evaporation source (1) and the substrate (4). The abovementioned vapor-deposition mask (2) is attached to said mask holder (6). While being kept at a distance from said vapor-deposition mask (2), the substrate (4) is made able to move freely relative to the evaporation source (1) and the mask holder (6) with the vapor-deposition mask (2) attached thereto. The openings (3) in the vapor-deposition mask (2) are slit-shaped, being long in the direction of the relative movement with respect to the substrate (1) and narrow in a width direction orthogonal to said relative movement. A plurality of said openings are provided in parallel in said width direction.

Description

Vapor deposition device and evaporation method

The present invention relates to a vapor deposition device and a vapor deposition method for forming a deposited film of a film formation pattern by a vapor deposition mask on a substrate.

In recent years, an organic EL display device using an organic electroluminescence element has been attracting attention as a display device instead of a CRT or an LCD.

In the organic EL display device, the electrode layer and the plurality of organic light-emitting layers are laminated on the substrate, and the sealing layer is formed to be self-luminous. The high-speed response is excellent compared with the LCD, and a high viewing angle and high contrast can be achieved.

The organic EL device as described above is generally produced by a vacuum deposition method, and a substrate and a vapor deposition mask are placed in close contact with each other in a vacuum chamber to perform vapor deposition, and the vapor deposition mask is used to form a desired layer. A vapor deposited film of a film pattern is formed on the substrate.

Further, in the production of the organic EL device as described above, the vapor deposition mask for obtaining a desired film formation pattern is also increased in size as the substrate is increased in size, but in order to increase the size, it is necessary to perform vapor deposition. Since the mask is welded and fixed to the mask frame to be produced, the large-sized vapor deposition mask is not easy to manufacture, and if the tension is insufficient, the mask is enlarged and the mask is covered. The center is deformed, and the degree of adhesion between the vapor deposition mask and the substrate is lowered, or the mask frame is made large in consideration of such a situation, so that wall thickness or weight increase is more remarkable.

As shown above, with the increase in the size of the substrate, the vapor deposition mask is sought The size of the high-definition mask is difficult to increase, and even if it can be produced, various problems occur in practical use due to the above-described problem of deformation.

Further, as shown in, for example, Japanese Laid-Open Patent Publication No. 2010-511784, the substrate is separated from the vapor deposition mask, and the organic light-emitting layer is made high by the evaporation source and the opening portion of the evaporating particles having directivity. In the method of accurately forming a film, the evaporation source and the opening portion for causing directivity are integrally formed, and the integrated structure is heated to a high temperature in order to generate evaporating particles from the opening portion, and the high-temperature opening is formed. Since the distance from the vapor deposition mask is close to each other, the vapor deposition rate is high, but the radiant heat from the evaporation source is received in the vapor deposition mask, and the position of the film formation pattern due to thermal expansion of the vapor deposition mask cannot be prevented. The problem of reduced accuracy.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2010-511784

The present invention has been made in view of the above problems, and it is an object of the invention to provide a vapor deposition device and a vapor deposition method which are required to increase the size of a substrate without increasing the size of the vapor deposition mask, even if it is smaller than the substrate. The vapor deposition mask also allows the substrate to be relatively moved in a separated state, and the vapor deposition film of the film formation pattern by the vapor deposition mask can be vapor-deposited in a wide range, and kept in a separated state as a relative Move, which is not only simple in construction, but also effective The vapor deposition is performed at a high rate and rapidly, and even when the separation is maintained, the restriction opening is provided between the evaporation source and the vapor deposition mask, and the scattering direction of the evaporated particles is restricted to be adjacent or The evaporation particles in the evaporation port portion at the separation position do not pass, and the film formation pattern is prevented from overlapping, and the mask holder having the scattering restriction portion provided with the restriction opening portion is provided with a vapor deposition mask, and the mask is held. The system not only serves as a scattering limiting portion but also suppresses incidence of radiant heat from the evaporation source, and the vapor deposition mask is formed to be elongated toward the relative movement direction of the substrate and narrow in the lateral direction orthogonal thereto. In the slit shape, the substrate and the vapor deposition mask are relatively moved in a separated state, and high-precision and high-efficiency vapor deposition can be performed.

The gist of the present invention will be described with reference to the accompanying drawings.

A vapor deposition device is configured such that a film forming material evaporated by the evaporation source 1 is passed through the mask opening 3 of the vapor deposition mask 2 and deposited on the substrate 4, and the vapor deposition mask 2 is used. The vapor deposition film of the determined film formation pattern is formed on the substrate 4, and is characterized in that the evaporation source 1 and the substrate 4 disposed in a state opposed to the evaporation source 1 are disposed. a mask holder 6 having a scattering restricting portion for restricting the opening portion 5 for restricting the scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source 1, and the substrate 4, the vapor deposition mask 2 disposed in a separated state is joined to the mask holder 6 and the mask holder 6 and the mask holder 6 to which the vapor deposition mask 2 is attached The evaporation source 1 is configured to be relatively movable in a state of being separated from the vapor deposition mask 2, and the mask opening 3 of the vapor deposition mask 2 is formed to face the substrate 4 The moving direction is long and the transverse direction orthogonal thereto is a wide narrow slit shape, and a plurality of them are arranged side by side in the lateral direction.

In the vapor deposition device of the first aspect of the invention, the evaporation source 1 in which the film formation material is accommodated is disposed in the vapor deposition chamber 7 which is a reduced-pressure ambient gas. The vapor deposition mask 2 of the mask opening 3 through which the evaporating particles of the film forming material evaporated by the evaporation port portion 8 of the evaporation source 1 pass is provided, and the evaporation port portions 8 are arranged in parallel. The evaporation particles scattered by the plurality of evaporation ports 8 are deposited on the substrate 4 aligned with the vapor deposition mask 2 through the mask opening 3, and are determined by the vapor deposition mask 2. A vapor deposition film of a film pattern is formed on the substrate 4, and the mask holder 6 is disposed between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1, and the mask holder is held. The scattering member 6 is provided with the scattering restricting portion that allows the evaporating particles from the adjacent or separated position of the evaporation port portion 8 to pass through, and the mask holder 6 is attached to the substrate 4 The vapor deposition mask 2 disposed in the state, so that the substrate 4 is The mask holder 6 and the evaporation source 1 with respect to the vapor deposition mask 2 are relatively moved while being kept in a separated state from the vapor deposition mask 2, and the vapor deposition is performed in the relative movement direction. The vapor deposition film of the film formation pattern of the mask 2 is continuous, and even if it is smaller than the vapor deposition mask 2 of the substrate 4, the vapor deposition film is formed in a wide range.

In the vapor deposition device according to the first aspect of the invention, the vapor deposition mask 2 is attached to an end portion of the mask holder 6 on the substrate 4 side.

In the vapor deposition device of the third aspect of the invention, the vapor deposition mask 2 is tensioned and laid on the end portion of the mask holder 6 on the substrate 4 side.

In the vapor deposition device of the fourth aspect of the invention, the mask holder 6 is provided with the vapor deposition mask 2 by applying tension to the relative movement direction of the substrate 4.

In the vapor deposition device according to the first aspect of the invention, the vapor deposition mask 2 is formed by dividing into a plurality of layers in a lateral direction orthogonal to the relative movement direction of the substrate 4, and the division is performed. The subsequent vapor deposition mask 2 is attached to the mask holder 6 in a state in which the aforementioned laterally side-by-side arrangement is provided.

Further, in the vapor deposition device of the third aspect of the invention, the evaporation port portion 8 of the plurality of evaporation sources 1 is arranged side by side in a direction orthogonal to the relative movement direction of the substrate 4, to press the one or The vapor deposition mask portion 8 covers the respective restriction openings 5 of the mask holder 6 having the scattering restriction portion of the restriction opening portion 5 in the opposing state, and the vapor deposition mask 2 is provided. An end portion of the mask holder 6 on the side of the substrate 4 is attached.

Further, in the vapor deposition device according to the first aspect of the invention, the mask holder 6 is provided with a temperature control mechanism 9.

Further, regarding the vapor deposition device of claim 1, wherein The mask holder 6 is formed to extend in the relative movement direction of the substrate 4, and is applied to the vapor deposition mask 2 in order to prevent the vapor deposition mask 2 from being laid on the mask holder 6. The ribs 24 which are deformed by the tension of the mask holder 6 and which increase the rigidity of the mask holder 6 in the laying direction are provided between the restriction openings 5 .

In the vapor deposition device of the ninth aspect of the invention, the rib 24 extending in the relative movement direction of the substrate 4 is provided between the restriction openings 5 of the mask holder 6 A mask mounting support surface 23 that supports and joins the vapor deposition mask 2 provided in each of the restriction opening portions 5 is provided on the front end surface of the rib portion 24 on the substrate 4 side.

Further, in the vapor deposition device of claim 10, the vapor deposition mask 2 and the mask mounting support surface 23 are joined by fusion bonding.

Further, in the vapor deposition device of claim 11, wherein the welding is performed using a laser.

In the vapor deposition device of claim 10, the vapor deposition mask 2 is divided into a plurality of vapor deposition masks 2 in a lateral direction orthogonal to the relative movement direction of the substrate 4, and is attached to the mask mounting support surface 23 Engaged.

In the vapor deposition device of the first aspect of the invention, the mask holder 6 has a shape in which the opening portion 5 is formed such that an opening area on the side of the evaporation source 1 is smaller than a side of the substrate 4 The shape of the opening area.

Further, the vapor deposition device according to the first aspect of the invention is characterized in that the plurality of mask openings 3 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, The long moving slit-shaped opening portion is formed in the relative moving direction, or the plurality of mask opening portions 3 are arranged side by side in the relative moving direction, so as to be elongated in the relative moving direction and orthogonal to the lateral direction. In the narrow slit shape, the total opening length in the relative movement direction of the mask opening portion 3 is set to be longer as the distance from the lateral direction is longer than the central portion of the restriction opening portion 5.

Further, in the vapor deposition device according to the first aspect of the invention, the film thickness correction plate 29 is disposed on the substrate 4 side of the vapor deposition mask 2, and a part of the mask opening portion 3 is closed. The opening range of each of the mask openings 3 is set.

In the vapor deposition device of the first aspect of the invention, the relative movement of the mask opening 3 of the vapor deposition mask 2 deposited on the film formation pattern of the substrate 4 with the substrate 4 is determined. The direction in which the directions are orthogonal to each other is a gap Mpx in which the gap between the substrate 4 and the vapor deposition mask 2 is G, and the distance between the vapor deposition mask 2 and the evaporation port portion 8 is TS, and the above-described When the formation interval of the film pattern in the lateral direction orthogonal to the relative movement direction of the substrate 4 is Px, it is represented by the following formula (1), and is set to be narrower than the film formation pattern forming interval Px, and the vapor deposition mask 2 is formed. The opening size Mx of the mask opening 3 that is orthogonal to the relative movement direction of the substrate 4 is such that the gap between the substrate 4 and the vapor deposition mask 2 is G, and the vapor deposition mask 2 With the aforementioned evaporation port portion 8 When the film formation width of the film formation pattern of the vapor deposition film is set to be TS, the film formation pattern of the vapor deposition film is represented by the following formula (2), and is set to be wider than the film formation pattern P of the vapor deposition film.

[Number 1] MPx = Px {α / (1 + α)} α = TS / G...... (1)

In the vapor deposition device of the eighth aspect of the invention, in the surface of the vapor deposition mask 2 on the side of the substrate 4, between the periphery of the mask opening 3 or the mask opening 3, A media path or a heat pipe through which a medium for performing temperature control by heat exchange flows is disposed, and the temperature control mechanism 9 is provided in the vapor deposition mask 2.

In the vapor deposition device according to the first aspect of the invention, the evaporation port portion 8 of the evaporation source 1 is formed to have an elongated shape toward the relative movement direction of the substrate 4 and a lateral direction orthogonal thereto. Wide narrow slits.

In the vapor deposition device of the first aspect of the invention, the vapor deposition device 2 and the vapor deposition mask 2 are vapor-deposited in a separated state, and the vapor deposition mask 2 is used. When the vapor deposition film of the film formation pattern is formed on the substrate 4, the side end inclined portion of the vapor deposition film is hatched SH, and the gap between the substrate 4 and the vapor deposition mask 2 is G, and the evaporation port portion 8 is the aforementioned. Horizontal opening width is set to x. When the distance between the evaporation port portion 8 and the vapor deposition mask 2 is TS, it is expressed by the following formula (3), and the gap G is not formed so as not to reach the interval PP adjacent to the vapor deposition film. Set to be larger, the aforementioned opening width of the evaporation port portion 8 x is set to be smaller.

Further, in the vapor deposition device according to the first aspect of the invention, the mask opening portion 3 of the vapor deposition mask 2 is formed by etching.

The vapor deposition device according to the first aspect of the invention, wherein the vapor deposition mask 2 is made of Ni or an alloy of Ni and Fe.

Further, in the vapor deposition device according to the first aspect of the invention, the film forming material is formed as an organic material.

Further, a vapor deposition method is characterized in that the vapor deposition device according to any one of the above-mentioned first to twenty-thirdth aspects of the present invention is formed on the substrate 4 by the vapor deposition mask 2 A vapor deposited film of a film formation pattern.

Since the present invention is configured as described above, it is a vapor deposition device and a vapor deposition method, and it is not necessary to increase the size of the vapor deposition mask in accordance with the increase in size of the substrate, and it is even smaller than the substrate. The mask also allows the substrate to be relatively moved in a separated state, and the vapor deposited film of the film formation pattern by the vapor deposition mask can be vapor-deposited in a wide range and kept in a separated state. In the state of being relatively moved, not only is the structure simple, but also vapor deposition can be performed efficiently and quickly, and the opening portion for restriction is provided in the evaporation source and the vapor deposition mask even when the separation state is maintained. Between the restrictions, the scattering direction of the evaporating particles is restricted so that the evaporating particles from the evaporating port portion at the adjacent or separated position do not pass, and the film forming pattern is prevented from overlapping, and the vapor deposition mask is brought into contact with the scattering portion provided with the opening portion for the restriction. The mask holder of the regulating portion is configured to be attached, and the substrate and the vapor deposition mask are relatively moved in a separated state, and high-precision vapor deposition can be performed, which can be lengthened by moving in the relative movement direction. The mask opening of the mask is vapor-deposited to increase the vapor deposition rate.

In particular, when manufacturing an organic EL device, it is possible to increase the size of the substrate, and to perform vapor deposition of the organic light-emitting layer with high precision, and to prevent damage to the substrate, the vapor deposition mask, and the vapor deposition film due to the contact of the mask. The vapor deposition mask which is smaller than the vapor deposition mask of the substrate is a vapor deposition device and a vapor deposition method for producing an organic EL element capable of achieving higher-precision vapor deposition.

Further, in the invention of the second aspect of the patent application, the action and effect of the present invention are further improved, and the vapor deposition device is more excellent in practical use.

Further, in the invention of the third and fourth aspects of the patent application, the vapor deposition mask is attached to the mask holder at the end on the substrate side farthest from the evaporation source, so that the radiant heat from the evaporation source can be more suppressed. In addition, the vapor deposition mask is given a tension higher than a thermal stress, thereby being stably maintained.

Further, in the invention of claim 5, since the vapor deposition mask is given tension in the relative moving direction of the substrate, the vapor deposition mask is provided. The deflection will disappear and the filming error caused by the deflection will disappear.

Further, in the invention of the sixth aspect of the patent application, even if it is divided into a plurality of smaller vapor deposition masks, it can be formed on a large-sized substrate, so that a vapor deposition mask can be easily formed.

Further, in the invention of the seventh aspect of the invention, according to the film thickness distribution characteristics of the respective evaporation ports, it is possible to form the mask openings individually in a row so as to achieve uniformity in each of the vapor deposition fields. The vapor deposition mask or the individual replacement of the vapor deposition masks is more practical.

Further, in the invention of claim 8, the temperature of the vapor deposition mask can be kept constant by suppressing the radiant heat from the evaporation source from entering the vapor deposition mask by providing the temperature control mechanism in the mask holder. Further, it is possible to prevent the mask from being thermally expanded, and the position of the mask opening attached to the vapor deposition mask of the mask holder is shifted, and the position of the film formation pattern is shifted.

Further, in the inventions of the ninth and tenth aspects of the patent application, by providing the ribs extending in the relative movement direction of the substrate, deformation of the mask holder due to the tension of the vapor deposition mask can be prevented. Further, the tension of the vapor deposition mask can be maintained, and a mask mounting support surface is provided on the front end surface of the rib, whereby the vapor deposition mask can be strongly supported and joined to the mask holder.

Further, in the invention of the eleventh aspect of the patent application, by the use of welding, the bonding of the vapor deposition mask to the mask mounting support surface can be strongly bonded.

Further, in the invention of claim 12 of the patent application, by In the eleventh application of the patent application, the laser is used for welding, and the vapor deposition mask can be welded to the small-surface mask mounting surface.

Further, in the invention of claim 13, in the case where the vapor deposition mask is divided into a plurality of layers, the mask mounting surface is bonded to the two vapor deposition masks, whereby the bonding can be performed. The vapor deposition masks are strongly bonded to the mask holder without gaps.

Further, in the invention of the fourteenth aspect of the invention, the shape of the opening for the mask holder is such that the opening area on the evaporation source side is smaller than the opening area on the substrate side, whereby the opening portion for restriction is formed. The evaporation source side can capture more evaporating particles of the film-forming material evaporated by the evaporation source, and can reduce the film-forming material adhering to the side surface of the restriction opening portion, and can easily perform film deposition after the exchange of the mask holder. Peeling and recycling of materials.

Further, in the invention of claim 15, the vapor deposition film of the film formation pattern determined by the lateral arrangement of the mask openings of the vapor deposition mask is formed by the relative movement direction of the substrate, but the vapor deposition is performed. The mask opening portion of the mask has a total opening length which is elongated toward the relative movement direction of the substrate, and is set to be longer as the lateral portion is away from the central portion of the restriction opening portion (for example, a position facing the evaporation opening portion) Therefore, the farther the lateral direction is, the lower the vapor deposition rate is. However, since the opening length becomes longer, the film thickness can be made uniform.

Further, in the invention of claim 16, in the case where the vapor deposition mask is bonded to the mask holder, when the film thickness correction is necessary, the correction plate is disposed on the substrate side, and the vapor deposition mask is not exchanged. The film thickness can be made uniform, and the film thickness can be adjusted by correcting the plate from the beginning by using the same slit length vapor deposition mask.

Further, in the invention of claim 17, the mask opening of the vapor deposition mask deposited on the film formation pattern of the substrate is determined to be orthogonal to the relative movement direction of the substrate. The gap between the substrate and the vapor deposition mask, the distance between the vapor deposition mask and the evaporation port portion, and the film formation pattern of the vapor deposition film are determined to be formed by film formation of the vapor deposition film. The pattern is more narrow, and the opening size of the mask opening of the vapor deposition mask that is orthogonal to the relative movement direction of the substrate (the width of the mask opening) is such that the substrate and the vapor deposition mask are The gap, the distance between the vapor deposition mask and the evaporation port portion, and the width of the opening in the film formation pattern of the vapor deposition film are determined to be wider than the film formation pattern of the vapor deposition film, thereby even the substrate Separating from the vapor deposition mask and having a gap therebetween, the position of the film formation pattern is shifted, or the width of the film formation pattern is shifted, and the formation precision of the film formation pattern can be made More precise.

Further, in the invention of claim 18, since the vapor deposition mask itself is temperature-controlled, it is excellent in efficiency, and, for example, a temperature control mechanism is additionally provided in the above-mentioned mask holder, thereby maintaining the temperature maintaining function. Further, it is possible to provide a medium path or a heat pipe constituting a part of the temperature control mechanism by using a separation portion (gap) between the substrate and the vapor deposition mask, thereby ensuring the degree of freedom in layout of the media path or the heat pipe.

Further, in the invention of claim 19, by narrowing the opening width of the evaporation opening of the evaporation source, the gap between the substrate and the vapor deposition mask can be suppressed (depending on the size of the gap, The shadow of the aforementioned film formation pattern (changed by the distance between the evaporation port and the vapor deposition mask) (the side end of the vapor deposition film) The amount of protrusion of the inclined portion is increased, and the evaporation rate can be increased by lengthening the opening length of the evaporation port portion in the relative movement direction.

Further, in the invention of claim 20, by narrowing the opening width of the evaporation opening portion, for example, when the RGB light-emitting layers are sequentially formed into a film, generation of the adjacent vapor deposition pattern can be prevented from occurring (adjacent The shadow of the pixel can be made larger by narrowing the opening width of the evaporation opening as described above, and the gap between the substrate and the vapor deposition mask can be made large, and the mask mounting surface between the restriction openings can be obtained. It is wider, or a temperature control mechanism such as a temperature control mechanism can be provided in the vapor deposition mask itself to become a more excellent vapor deposition device.

Further, in the invention of claim 21, when the mask opening of the vapor deposition mask is formed by etching, the mask opening portion can be formed with high precision even if a material having a small coefficient of linear expansion is used. Evaporation mask.

Further, in the invention of claim 22, the vapor deposition mask having a good formability and a low thermal expansion coefficient can be formed by forming a vapor deposition mask with an alloy of Ni or Ni and Fe.

Further, in the invention of claim 23, the evaporation device formed as an organic material is more excellent in practicability. Further, in the invention of claim 24, it is an excellent vapor deposition method which exhibits the above-described effects and effects.

The effects of the present invention are shown in the drawings, and the embodiments of the present invention which are considered to be suitable are briefly described.

In Fig. 1, the film-forming material evaporated by the evaporation source 1 is passed through The restriction opening 5 of the mask holder 6 which is formed by the scattering restricting portion is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and is formed on the substrate 4 by the vapor deposition. A vapor deposited film of a film formation pattern determined by the cover 2.

At this time, the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, and the substrate 4 is configured to be relatively movable with respect to the vapor deposition mask 2 or the evaporation source 1 while maintaining the separation state. By moving the substrate 4 in a relatively wide range, a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4 in a wider range than the vapor deposition mask 2 itself.

Further, a mask holder 6 is provided between the vapor deposition mask 2 and the evaporation source 1, and the mask holder 6 is provided with a scattering direction for restricting evaporation particles of the film forming material evaporated by the evaporation source 1. In the scattering restricting portion of the restricting opening portion 5, the evaporating particles from the adjacent evaporating port portion 8 at the separation position are not passed through the restricting opening portion 5, even if the vapor deposition mask 2 and the substrate 4 are separated. Also prevents the film formation patterns from overlapping.

In addition, since the vapor deposition mask 2 is joined to the mask holder 6 constituting the scattering regulation portion, the heat from the evaporation source 1 is suppressed to suppress the mask holder 6 or the vapor deposition mask. The temperature of 2 increases, and even if the vapor deposition mask 2 is separated from the substrate 4, the heat of the vapor deposition mask 2 is transmitted to the mask holder 6 due to the bonding with the mask holder 6. The temperature retention function of the vapor deposition mask 2 to maintain a certain temperature is improved.

In addition, for example, if necessary, in the mask holder 6 or evaporation When at least one of the masks 2 is provided with a temperature control mechanism that maintains the temperature of the vapor deposition mask 2, the temperature rise of the mask holder 6 or the vapor deposition mask 2 is further suppressed, and the vapor deposition mask 2 is maintained at a constant temperature. The temperature retention function is further enhanced.

Therefore, the mask holder 6 having the scattering restricting portion achieves the function of restricting the scattering of the evaporating particles, and also achieves the temperature maintaining function, thereby suppressing the temperature rise of the vapor deposition mask 2 and the vapor deposition mask 2 The temperature is maintained at a constant temperature, and deformation of the vapor deposition mask 2 due to heat is less likely to occur.

Therefore, with respect to the vapor deposition mask 2, the mask holder 6 and the evaporation source 1 to which the vapor deposition mask 2 is attached, the substrate 4 is relatively moved while being held in a separated state from the vapor deposition mask 2, In this case, the vapor deposition film of the film formation pattern formed by the vapor deposition mask 2 is continuously formed in the relative movement direction, and even if it is smaller than the vapor deposition mask 2 of the substrate 4, the vapor deposition film is formed in a wide range, and The deposition of the evaporation port portion 8 at the adjacent or separated position causes the deposition of the film formation pattern or the deformation due to heat to be sufficiently suppressed, and is formed into a vapor deposition device capable of performing high-precision vapor deposition.

Further, the mask openings 3 of the vapor deposition mask 2 are arranged side by side in the lateral direction orthogonal to the relative movement direction of the substrate 4, and the mask openings 3 are formed in one slit-like opening portion, or toward the aforementioned A plurality of openings are arranged side by side in the moving direction, and are formed in a slit shape which is elongated in the direction of the relative movement and which is orthogonal to the lateral direction, thereby forming the substrate 4 in the separated state. The vapor deposition mask 2 is configured to move relative to each other while performing high-precision vapor deposition, and the vapor deposition mask 2 is as shown above. The mask opening portion 3 is elongated in the relative movement direction, whereby the vapor deposition device and the vapor deposition method can be improved.

[Examples]

Specific embodiments of the invention are described in accordance with the drawings.

Fig. 1 is a general view of a schematic device.

In the present embodiment, an evaporation source 1 in which a film forming material (for example, an organic material for manufacturing an organic EL device) is housed is disposed in a vapor deposition chamber 7 which is a reduced-pressure atmosphere gas; The evaporation source 1 is provided with a plurality of vapor deposition masks 2 of the mask opening 3 through which the evaporation particles of the film formation material evaporate from the evaporation port portion 8 are arranged in parallel, and evaporation by the plurality of evaporation ports 8 The particles are deposited on the substrate 4 in a state of being separated from the vapor deposition mask 2 by the mask opening 3, and a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4. Further, a mask holder 6 is disposed between the substrate 4 and the evaporation source 1, and the mask holder is configured to prevent evaporating particles from passing from the adjacent or separated position of the evaporation port portion 8 from passing through. The scattering regulating portion of the opening portion 5 is joined to the vapor deposition mask 2 disposed in a state of being separated from the substrate 4, and is attached to the mask holder 6 so as to be shielded from the vapor deposition mask 2 The cover holder 6 and the evaporation source 1 are relatively moved while being kept separated from the vapor deposition mask 2 The substrate 4 is movably formed, and a vapor deposition film of a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4 in a larger range than the vapor deposition mask 2 by the relative movement direction.

That is, it is formed by evaporating particles from the plurality of evaporation ports 8 The vapor deposition is configured to be vapor-deposited on the substrate 4 having a large area, and the opening portion 5 is restricted to prevent incidence of the evaporation port portion 8 from the adjacent or separated position, so that even the vapor deposition mask 2 is in a separated state from the substrate 4, and also prevents the film formation patterns from overlapping.

Further, in the present embodiment, the plurality of evaporation sources 1 may be arranged side by side and the respective evaporation ports 8 may be arranged side by side, but a configuration in which a plurality of evaporation ports 8 are arranged side by side in one horizontally long evaporation source 1 is provided. The evaporating particle generating portion 26 heated by the film material and the horizontally long diffusing portion 27 that diffuses the evaporating particles generated by the evaporating particle generating portion 26 to uniformize the pressure constitute the evaporation source 1, and the horizontally long diffusion The portion 27 is provided with a plurality of the above-described evaporation port portions 8 side by side in the lateral direction. Further, for example, the evaporating particle generating unit 26 (坩埚26), which is exchanged by the automatic enthalpy switching mechanism, accommodates the film forming material, and the evaporating particles which are heated and evaporated by the crucible 26 are temporarily stopped to uniformize the pressure. The horizontally long diffusing portion 27 of the horizontally long shape is provided in the upper portion of the horizontally long diffusing portion 27, and a plurality of laterally elongated directions are formed along the lateral direction, and the lateral direction orthogonal thereto is wide as described above. A plurality of the above-described evaporation ports 8 are disposed in a narrow slit-shaped opening.

Further, each of the evaporation port portions 8 arranged side by side in the lateral direction is provided at the front end of the introduction portion 28 that protrudes toward the horizontally long diffusion portion 27 of the evaporation source 1, and is disposed around the introduction portion 28 or between the introduction portions 28. The heat blocking portion 19 that blocks the heat of the evaporation source 1 is blocked.

The thermal blocking portion 19 may be a heat shielder. In the present embodiment, a cooling plate 9D is used, and a media path for supplying a cooling medium is provided, and a cooling medium is provided. The heat-exchange portion 20D that exchanges the heat through the media path while depriving the heat from the evaporation source 1 improves the heat shielding effect.

Further, in the film formation, the evaporated particles adhere to the vapor deposition mask 2 or the mask holder 6 in succession, and if used for a long period of time, the film formation pattern is affected, so that the vacuum chamber 7 passes through the unillustrated The gate valves are provided with the exchange chamber 16 side by side, and the mask holder 6 to which the vapor deposition mask 2 is attached is freely taken out from the vapor deposition chamber 7. Further, the exchange chamber 16 is provided with a cleaning mechanism for the mask holder 6 to which the vapor deposition mask 2 is attached, and the deposited film-forming material is peeled off, and the film-forming material is recovered and reused by the material recovery mechanism, and The film-forming material or fine particles remaining on the surface of the mask holder 6 to which the vapor deposition mask 2 is attached after the film-forming material is peeled off are removed. Further, the mask holder 6 to which the vapor deposition mask 2 is attached may be configured to be cleaned by a cleaning mechanism without peeling/removing the adhered film forming material.

Further, in the present embodiment, a plastic film is used as the transparent substrate 4, and a composite of a cathode, a plurality of light-emitting layers composed of organic substances, and an anode layer is formed on the plastic film 4 by a roll-to-roll method. In the method of the EL display, it is extremely effective for vapor-depositing a light-emitting layer by a vacuum vapor deposition method.

Fig. 2 is an enlarged plan view showing a vapor deposition mask in which a plurality of slit-shaped opening portions 3 which are elongated in the relative movement direction of the substrate 4 are formed side by side in the lateral direction.

The mask opening portion 3 of the vapor deposition mask 2 is formed so as to be arranged in a plurality of rows in the lateral direction orthogonal to the relative movement direction of the substrate 4, and is configured to have an opening area that is elongated toward the relative movement direction of the substrate 4. Slot shape. Further, in the vapor deposition mask 2, in order to prevent thermal expansion, the mask opening portion 3 is deformed to form a desired film formation pattern, and an alloy composed of Fe and Ni is formed of Invar or the like having a small coefficient of linear expansion. It is appropriate to form.

Further, the temperature control unit 9 is provided in at least one of the mask holder 6 and the vapor deposition mask 2, and is controlled so as to maintain the temperature of the vapor deposition mask 2, even if the vapor deposition mask 2 is separated from the substrate 4. The state is also joined to the mask holder 6, so that heat is transmitted to the mask holder 6, and the temperature rise of the vapor deposition mask 2 is suppressed, and the temperature of the vapor deposition mask 2 is kept constant. As the vapor deposition mask 2, nickel or the like having a larger linear expansion coefficient but better formability than Invar may be used.

Further, in order to vapor-deposit the film-forming material on the substrate 4 at a high rate, it is preferable that the opening area of the opening portion 3 is wide, and the mask opening portion 3 which is orthogonal to the relative movement direction of the substrate 4 is evaporated. The evaporating particles ejected from the mouth portion 8 must be incident on adjacent pixels, so the width of the opening is limited. In the present embodiment, the film formation pattern is a pattern in which the relative movement direction of the substrate 4 is linear. Therefore, it is not a problem to lengthen the mask opening portion 3 in the relative movement direction of the substrate 4, and the vapor deposition mask 2 has a relative orientation toward the substrate 4. The moving direction is an elongated opening portion, a long relative movement film forming range can be obtained, and the film thickness can be formed into a thick film.

Specifically, when the width of the opening of the mask opening 3 is the same, the film thickness (Å) at the time of film formation is a vapor deposition rate (Å/s)/moving speed (mm/s) × evaporation mask opening. The seam length (mm) is indicated. For example, the vapor deposition mask opening width Mx which is orthogonal to the relative movement direction of the substrate 4 is set to 0.1 mm, and the slit of the vapor deposition mask 2 in the relative movement direction of the substrate 4 is long. My is compared with the case where film formation is performed at 10 mm and 100 mm. When the vapor deposition rate of the relative position of the evaporation port portion 8 is 10 Å/s in common, and the moving speed is 1 mm/s, the film thickness when My is 10 mm is 100 Å, but the film thickness when My is 100 mm is 1000 Å. At the same moving speed, a vapor deposited film having a film thickness of 10 times can be formed. Further, when the desired film thickness is 400 Å in common, the vapor deposition rate at the relative position of the evaporation port portion 8 is 10 Å/s, and the moving speed at 10 mm for My is 0.25 mm/s, but My is 100 mm. The moving speed is 2.5mm/s, which shortens the Tact Time.

Further, the mask opening portion 3 of each row of the vapor deposition mask 2 is preferably formed into a slit-like opening portion which is elongated in the relative movement direction, and the opening area is preferably large. However, as shown in FIG. 3, in order to increase the rigidity of the vapor deposition mask 2, the mask opening 3 is formed so that the slit opening portion which is elongated in the relative movement direction is scattered in the direction. Each of the mask opening portions 3 is formed in a slit shape that is elongated toward the relative movement direction of the substrate 4 and that is orthogonal to the lateral direction, and the slit-shaped opening portion 3 of each slit-like portion is formed. The total opening length (total opening area) is ensured to be wider. However, in order to make the film thickness distribution in the pixel uniform, it is necessary to pay attention to the shape of the mask opening 3.

Specifically, when the mask opening 3 is formed by etching, as shown in FIG. 4, when the inner corner R is formed in the mask opening 3, and the vapor deposition is performed while performing the relative movement, two of the linear vapor deposited films are formed. Since the film thickness of the end is thinned, the internal angle R generated at the time of etching processing becomes small by making the thickness of the mask thin.

Further, when a plurality of the mask openings 3 are arranged side by side in the relative movement direction, and the mask openings 3 which are elongated in the relative movement direction are collectively formed, a case where the slits are formed in a long shape is formed. In comparison, the influence of the inner angle R becomes larger, so even if a plurality of mask openings 3 are arranged side by side in the relative movement direction, the length of one opening portion in the relative movement direction can be lengthened. Thereby, the decrease in the film thickness at both ends of the vapor-deposited film can be reduced by the internal angle R.

For example, when the inner angle is R and the length of the straight portion of the mask opening portion 3 in the relative movement direction is A, the film thickness ratio of the side end to the center portion is A/(A). +2R) indicates. The closer the value of the formula is to 1, the smaller the difference in film thickness between the center and the edge of the vapor deposition pattern is, and a good film thickness distribution is formed in one film formation pattern.

In addition, it is necessary to increase A, decrease R, and make the value of A/(A+2R) close to 1. When etching is performed, if R of about 80% of the thickness of the mask occurs, the thickness of the mask is reduced, and R is reduced.

Specifically, in the mask having a thickness of 0.1 mm, the internal angle R is 0.08 mm. When the film thickness of the edge of the film formation pattern formed into a film shape is reduced to 2% or less in the thickness of the center portion, it is represented by A/(A+2R)=0.98, and when 0.08 is substituted into R. , A becomes 7.84mm. In other words, when the thickness of the vapor deposition mask 2 is 0.1 mm, and the film thickness unevenness in the film formation pattern is to be 2% or less, the mask opening 3 is arranged side by side in the relative movement direction. The length of the straight portion of the relative movement direction of one of the mask openings 3 must be 7.84 mm or more.

In addition, in the mask having a thickness of 0.05 mm, the inner angle R becomes In the same manner, the A required for suppressing the film thickness unevenness in the film formation pattern to 2% or less is 3.92 mm. Therefore, when the thickness of the mask is reduced, the length of the required A is short, and if the length A is lengthened, the film thickness unevenness can be suppressed to be lower.

Further, as shown in Fig. 5, the opening width of the evaporation port portion 8 of the evaporation source 1 is narrowed. x, the shadow SH of the film formation pattern (the amount of protrusion of the side end inclined portion of the vapor deposition film) can be suppressed, and the opening length of the evaporation port portion 8 can be lengthened in the relative movement direction, whereby the evaporation rate can be increased.

Further, as shown in Fig. 6, the hatching SH is set to the gap G, and the lateral opening width of the evaporation port portion 8 is set. x. When the distance TS between the evaporation port portion 8 and the vapor deposition mask 2 is expressed by the following formula (3), the opening of the evaporation port portion is wide so that the shadow SH does not reach the interval PP from the adjacent vapor deposition film. Width x is set to be smaller.

Specifically, if the shadow SH is set to 0.03 mm or less, the TS is set to 100 to 300 mm. When x is set to 0.5 to 3 mm, the gap G can be ensured to be 1 mm or more.

For example, if the TS is 100mm When x is set to 3 mm, G becomes 1 mm, and if TS is 100 mm, When x is reduced to 0.6 mm, G can be ensured to be 5 mm. In addition, if the TS is set to 300mm, When x is set to 3 mm and G is set to 1 mm, SH can be reduced to 0.01 mm, which can correspond to a higher-precision film formation pattern.

Further, when the slit length of each of the mask openings 3 of the vapor deposition mask 2 (the formation of the opening portion is long) or the plurality of openings is formed, the total opening length of the relative movement direction of the substrate 4 is set to be laterally away from the center. The farther the part is, the longer it is, and the farther away from the center, the lower the vapor deposition rate, but the film thickness of the vapor deposition film is set to be constant.

For example, as shown in Fig. 7 and Fig. 8, when the scattering angle of the evaporating particles at a certain position x in the lateral direction (X-axis direction) orthogonal to the relative movement direction of the substrate 4 is θ, the position at x is An approximate distribution obtained by multiplying the cosine law (cos θ) by the power multiplication coefficient n, and a film thickness distribution in the relative movement direction (Y-axis direction) of the substrate 4, and a mask opening portion of the vapor deposition mask 2 The formation length of 3 is set to be a long-distance symmetrical change with the center portion as a boundary.

Specifically, the size of the evaporation port is, for example, the width of the opening of the evaporation opening x is set to 1mm, and the opening of the evaporating port is long. When y is 60 mm, and the film thickness distribution in the lateral direction orthogonal to the relative movement direction of the substrate 4 becomes a distribution close to the 20th power of cos θ, that is, the film thickness distribution shown in Fig. 8 is obtained. When the incident angle of the evaporating particles to the vapor deposition mask 2 is increased, the influence of the above-described error becomes large. Therefore, when the film thickness is as thin as the center 8 is used, the film is formed at the time of film formation, -30 to + in the X-axis direction. The width 60 of 30 is an effective range of film formation by one nozzle. When the length of formation of the substrate 4 in the relative movement direction at the mask position facing the opening of the evaporation opening is set to 100 mm, vapor deposition is performed at both ends of the film forming effective range, that is, at positions of -30 and +30. The length of the opening of the mask is about 146 mm. As shown in Fig. 8, the farther from the center toward the both ends, the longer the opening is symmetrical.

Further, as shown in FIG. 9, the film thickness correction plate 29 is disposed on the substrate 4 side of the vapor deposition mask 2 by the gap G in which the substrate 4 and the vapor deposition mask 2 are separated, thereby masking the vapor deposition mask After the cover 2 is joined to the mask holder 6, it is necessary to separately perform the film thickness correction, and it is not necessary to reattach the vapor deposition mask 2, and the film thickness of the vapor deposition film can be corrected. Similarly, the mask opening portion 3 may be formed into a slit shape which is not elongated from the left and right ends and which is elongated toward the relative movement direction of the substrate 4, and is formed into the same slit to form a film thickness correcting plate. 29 to make corrections.

Further, as shown in FIG. 10, the interval between the mask opening portions 3 of the vapor deposition mask 2 to be deposited on the deposition pattern of the substrate 4 and the relative movement direction of the substrate 4 is determined. The component of the gap between the gap G of the corresponding substrate 4 and the vapor deposition mask 2 and the distance TS from the evaporation port portion 8 to the vapor deposition mask 2 is set to be narrower than the interval between the deposition patterns of the vapor deposition film.

Specifically, as shown in Fig. 10, the distance MPx from the mask position facing the center of the evaporation port portion 8 to the center of the mask opening is the position of the substrate 4 opposed to the center of the opening of the evaporation port portion. The distance Px of the center of the film pattern multiplied by the component of α/(1+α) (at this time α=TS/G) becomes small.

Therefore, for example, when TS is set to 100 mm and G is set to 1 mm, α is 100, and α/(1+α) is about 0.99. Therefore, for example, when Px is 10 mm, the MPx system is 9.9 mm, and the MPx system is a value smaller than Px.

That is, since the substrate 4 is separated from the vapor deposition mask 2, the size of the gap G between the corresponding substrate 4 and the vapor deposition mask 2 and the evaporation port portion 8 are steamed. The distance TS of the plating mask 2 is shifted laterally by the mask opening 3 of the mask 2, and the position of the vapor deposition film deposited on the substrate 4 is laterally shifted. However, considering the offset amount, the vapor deposition is covered. The opening interval of the cover 2 is set to be narrower than the film formation pattern, whereby a vapor deposition film having a high positional accuracy of the film formation pattern can be formed.

Further, similarly, as shown in FIG. 11, the vapor deposition mask opening width Mx is the opening width of the evaporation opening portion 8. When x is larger than the mask opening width Mx, the difference between the size of the gap G of the corresponding substrate 4 and the vapor deposition mask 2 and the magnitude of the distance TS from the evaporation port portion 8 to the vapor deposition mask 2 is widened. Specifically, the mask opening width Mx is ( x + α P / (1 + α)) indicates (at this time α = TS / G).

For example, if the vapor deposition pattern width P is set to 0.1 mm and the TS is set to 100 mm, When x is set to 1 mm, the mask opening width Mx is about 0.126 mm when the width G is 3 mm, and is about 0.143 mm when G is 5 mm, which is wider than the vapor deposition pattern width P.

Further, the mask holder 6 of the present embodiment is provided with ribs 24 extending in the relative movement direction of the substrate 4, and the substrate-side front end surface of the ribs 24 is provided in each of the restriction opening portions 5 The vapor deposition mask 2 supports the joined mask mounting support surface 23. For example, as shown in FIG. 12, when the R pixel of the light-emitting layer is vapor-deposited, the mask mounting support surface 23 may be provided in the width of the other G and B pixels and the interval therebetween, because the substrate 4 and the vapor-deposited mask 2 are provided. The gap G is separated, so that it can be ensured to be wider. Specifically, the mask mounting support surface 23 in the configuration in which the substrate 4 and the vapor deposition mask 2 are in close contact with each other is a vapor deposition film gap PP for RGB pixel vapor deposition and a vapor deposition pattern width P, and is 2P+. 3PP said. Further, since the gap G is provided, the center of the substrate 4 facing the evaporation port portion 8 causes a difference between the position of the most end of the vapor deposition pattern and the position of the edge of the mask opening portion 3 of the vapor deposition mask 2. A. Line A is G(Px+P/2- x/2)/(TS+G) indicates that the mask mounting support surface 23 is wider than 2A in comparison with the case where the substrate 4 and the vapor deposition mask 2 are in close contact with each other.

More specifically, for example, when the vapor deposition pattern width P is set to 0.1 mm and the vapor deposition film interval PP is set to 0.05 mm, the mask mounting support surface 23 when the substrate 4 and the vapor deposition mask 2 are in close contact with each other is 0.35. Mm. However, when the substrate 4 of the present embodiment and the vapor deposition mask 2 are in a separated state, for example, if the TS is set to 200 mm, When x is 1 mm and Px is 30 mm, the mask mounting support surface 23 is about 0.64 mm when G is 1 mm, and is about 1.79 mm when G is 5 mm, so that the vapor deposition mask 2 can be sufficiently superposed. The area where the spot is welded.

Further, when the vapor deposition mask 2 is divided and joined to the mask holder 6 in such a manner that uniformity is achieved in each of the vapor deposition fields in accordance with the film thickness distribution characteristics of each of the evaporation port portions 8, as shown in FIG. As shown, the two vapor deposition masks 2 are abutted against the mask mounting support surface 23, and are welded by laser, whereby the vapor deposition mask 2 can be strongly bonded to the mask holder without any gap therebetween.

However, the present invention is not limited to the embodiment, and the specific configuration of each constituent element can be appropriately designed.

1‧‧‧ evaporation source

2‧‧‧ evaporated mask

3‧‧‧Mask opening

4‧‧‧Substrate

5‧‧‧Restriction opening

6‧‧‧Mask holder

7‧‧‧vapor deposition chamber (vacuum chamber)

8‧‧‧Evaporation mouth

9‧‧‧ Temperature Control Mechanism

9D‧‧‧Cooling plate

16‧‧ ‧ exchange room

19‧‧‧ Thermal Interruption

20D‧‧‧Hot Exchange Department

23‧‧‧Mask mounting surface

24‧‧‧ ribs

26‧‧‧Evaporation Particle Generation Department (坩埚)

27‧‧‧Horizontal Diffusion Department

28‧‧‧Importing Department

29‧‧‧ Film thickness correction plate

x‧‧‧Evaporation mouth opening width

G‧‧‧ gap

Mx‧‧‧Mask opening opening size

P‧‧‧ film width

PP‧‧‧ Interval with vapor deposited film

R‧‧‧ inside corner

SH‧‧‧ shadow

The lateral interval of the Mpx‧‧ mask opening 3 and the relative movement direction of the substrate 4 are orthogonal

The lateral direction of the Px‧‧‧ film formation pattern and the relative movement direction of the substrate 4 are orthogonal

Distance between TS‧‧Evaporation port 8 and evaporation mask 2

Fig. 1 is a front view showing a schematic outline of a main part of the present embodiment.

Fig. 2 is an enlarged plan view showing the vapor deposition mask of the present embodiment.

Fig. 3 is an enlarged plan view showing another example of the vapor deposition mask of the present embodiment.

Fig. 4 is an enlarged plan view showing the opening of the mask of the present embodiment.

Fig. 5 is a perspective view showing the evaporation source of the present embodiment.

Fig. 6 is an explanatory view of suppressing the shadow of the vapor deposition film by narrowing the opening width of the evaporation port portion of the evaporation source of the present embodiment.

Fig. 7 is an explanatory view showing the scattering angle θ of the evaporated particles at a certain position x in the present embodiment.

Fig. 8 is a view showing the distribution of the film thickness of the present embodiment in accordance with the cosine law, and accordingly, the mask opening length correction of the mask opening portion is set to be longer as the distance from the center portion is longer.

Fig. 9 is an enlarged explanatory view showing a film thickness correcting plate of the present embodiment.

Fig. 10 is an explanatory view showing that the lateral formation pitch of the mask opening portion of the vapor deposition mask of the present embodiment is slightly narrower than the film formation pattern pitch.

Fig. 11 is an explanatory view showing that the width of the opening in the lateral direction of the mask opening portion of the vapor deposition mask of the present embodiment is slightly wider than the width of the film formation pattern.

Fig. 12 is a view showing a wide view of the mask mounting support surface of the rib portion between the restriction opening portions of the mask holder of the present embodiment.

Fig. 13 is an explanatory view showing a mask mounting support surface of a rib between the restriction openings of the mask holder of the present embodiment, and welding the divided vapor deposition masks.

2‧‧‧ evaporated mask

3‧‧‧Mask opening

Claims (24)

A vapor deposition device configured to deposit a film forming material evaporated by an evaporation source through a mask opening of a vapor deposition mask, and deposit the pattern on the substrate by the vapor deposition mask A vapor deposition device in which a vapor deposition film is formed on a substrate, wherein a mask holder is disposed between the evaporation source and the substrate disposed in a state of being opposed to the evaporation source, and the mask holder is disposed a scattering restricting portion that restricts an opening portion for restricting a scattering direction of the evaporating particles of the film forming material evaporated by the evaporation source, and the vapor deposition mask disposed in a state of being separated from the substrate The mask holder is configured to form the substrate so as to be relatively movable while being held in a separated state from the vapor deposition mask, with respect to the mask holder and the evaporation source to which the vapor deposition mask is attached. The mask opening portion of the vapor deposition mask is formed in a slit shape that is elongated toward the relative movement direction of the substrate and is narrow in the lateral direction orthogonal thereto, and a plurality of slits are arranged side by side in the lateral direction. The vapor deposition device according to the first aspect of the invention, wherein the evaporation source that houses the film formation material and the evaporation source are disposed in a vapor deposition chamber that is a reduced-pressure ambient gas The vapor deposition mask of the mask opening portion through which the evaporation particles of the film formation material evaporate from the evaporation port portion are disposed, and the evaporation port portions are arranged in parallel, and the evaporating particles scattered by the plurality of evaporation port portions are passed through The mask opening portion is deposited on a substrate aligned with the vapor deposition mask, and a vapor deposition film of a film formation pattern determined by a vapor deposition mask is formed on the substrate, and the evaporation source and the evaporation source are Between the aforementioned substrates disposed in a state opposite to the evaporation source, The mask holder is provided, and the mask holder includes the scattering restricting portion that is provided with the restricting opening that prevents the evaporating particles from the evaporating port portion from the adjacent or separated position from passing through, and is held in the mask The vapor deposition mask disposed in a state of being separated from the substrate, and the substrate and the evaporation mask are held with respect to the mask holder and the evaporation source to which the vapor deposition mask is attached In the separated state, the vapor deposition film of the vapor deposition mask is continuous in the relative movement direction, and the vapor deposition film is formed in a wide range even if it is smaller than the vapor deposition mask of the substrate. The vapor deposition device according to claim 1, wherein the vapor deposition mask is attached to an end portion of the mask holder on the substrate side. The vapor deposition device according to the third aspect of the invention, wherein the vapor deposition mask is tensioned and laid on an end portion of the mask holder on the substrate side. The vapor deposition device of claim 4, wherein the mask holder is provided with the vapor deposition mask by applying tension to a direction of relative movement of the substrate. The vapor deposition device according to the first aspect of the invention, wherein the vapor deposition mask is formed by dividing into a plurality of layers in a lateral direction orthogonal to a relative movement direction of the substrate, and the vapor deposition after the division is covered. The cover is attached to the aforementioned mask holder in a state in which the aforementioned laterally side by side is disposed. The vapor deposition device of claim 3, wherein the evaporation port portion of the plurality of evaporation sources is arranged side by side in a direction orthogonal to a relative movement direction of the substrate, so that the one or more evaporation ports are respectively Correct The vapor deposition mask is attached to the end of the mask holder on the substrate side so as to cover the respective restriction openings of the mask holder having the scattering restricting portion having the opening for the restriction. unit. The vapor deposition device of claim 1, wherein the mask holder is provided with a temperature control mechanism. The vapor deposition device of the first aspect of the invention, wherein the mask holder extends in a relative movement direction of the substrate, and in order to prevent the vapor deposition mask from being laid on the mask holder The rib portion that raises the rigidity of the mask holder in the laying direction is provided between the restriction opening portions due to the deformation of the mask holder caused by the tension applied to the vapor deposition mask. The vapor deposition device of the ninth aspect of the invention, wherein the rib portion extending in a relative movement direction of the substrate is provided between the restriction opening portions of the mask holder, and the substrate on the rib portion is provided The side front end surface is provided with a mask mounting support surface that supports and joins the vapor deposition mask provided in each of the restriction opening portions. The vapor deposition device of claim 10, wherein the vapor deposition mask and the mask mounting support surface are joined by fusion bonding. The vapor deposition device of claim 11, wherein the fusion system uses a laser. The vapor deposition device according to claim 10, wherein the plurality of vapor deposition masks are divided into a plurality of vapor deposition masks that are orthogonal to the relative movement direction of the substrate, and joined to the mask mounting support surface. The vapor deposition device of claim 1, wherein the foregoing The mask holder has a shape in which the opening portion for the restriction is formed such that the opening area on the evaporation source side is smaller than the opening area on the substrate side. The vapor deposition device according to the first aspect of the invention, wherein the plurality of mask openings are formed side by side in a lateral direction orthogonal to the relative movement direction of the substrate, and are formed in the relative movement direction. a long slit-shaped opening portion or a plurality of mask opening portions arranged side by side in the relative movement direction, and having a slit shape which is elongated in the relative movement direction and orthogonal to the lateral direction, is narrow and narrow. The total opening length of the mask opening in the relative movement direction is set to be longer as the distance from the lateral direction is longer than the central portion of the restriction opening. The vapor deposition device according to claim 1, wherein a film thickness correction plate is disposed on the substrate side of the vapor deposition mask, and a part of the opening of the mask is closed to set the opening of each of the masks The range of openings. The vapor deposition device of the first aspect of the invention, wherein the mask opening of the vapor deposition mask deposited on the film formation pattern of the substrate is determined to be transverse to a direction in which the substrate moves in a direction orthogonal to the relative movement direction of the substrate The gap Mpx is formed such that the gap between the substrate and the vapor deposition mask is G, the distance between the vapor deposition mask and the evaporation port portion is TS, and the relative movement direction of the film formation pattern with the substrate is positive. When the interval in which the lateral direction of the intersection is Px is expressed by the following formula (1), it is set to be narrower than the film formation pattern forming interval Px, and the relative movement direction of the mask opening of the vapor deposition mask to the substrate The opening size Mx in the horizontal direction is set to G, the gap between the substrate and the vapor deposition mask is G, the distance between the vapor deposition mask and the evaporation port portion is TS, and the film formation pattern of the vapor deposition film is When the film formation width is set to P, it is represented by the following formula (2), and is set to be wider than the film formation pattern width P of the vapor deposition film [number 1] MPx = Px {α / (1 + α)} α =TS/G.........(1) The vapor deposition device of the eighth aspect of the invention, wherein the surface of the vapor deposition mask on the substrate side is disposed between the mask opening portion and the mask opening portion so as to perform heat exchange. The medium path or the heat pipe through which the temperature-controlled medium flows is provided with the temperature control mechanism in the vapor deposition mask. The vapor deposition device according to the first aspect of the invention, wherein the evaporation port portion of the evaporation source is formed to have a wide and narrow slit in a lateral direction orthogonal to a direction in which the substrate is relatively moved. shape. The vapor deposition device according to the first aspect of the invention, wherein the substrate and the vapor deposition mask are vapor-deposited in a separated state, and a vapor deposition mask is used to form a film formation pattern on the substrate. In the vapor deposition film, the side end inclined portion of the vapor deposition film is a hatching SH, and the gap between the substrate and the vapor deposition mask is G, and the width of the opening in the lateral direction of the evaporation port portion is set to x. When the distance between the evaporation port portion and the vapor deposition mask is TS, it is expressed by the following formula (3), and the gap G is set so that the shadow SH does not reach the interval PP adjacent to the vapor deposition film. Larger, the aforementioned opening width of the evaporation port x is set to smaller The vapor deposition device according to claim 1, wherein the mask opening of the vapor deposition mask is formed by etching. The vapor deposition device of claim 1, wherein the vapor deposition mask is made of Ni or an alloy of Ni and Fe. The vapor deposition device of claim 1, wherein the film forming material is formed as an organic material. An evaporation method, comprising: forming a film formation pattern determined by the vapor deposition mask on the substrate by using a vapor deposition device according to any one of the above-mentioned claims; Evaporation film.