JP2012193391A - Deposition device and deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a deposition device which does not enlarge a deposition mask equally with the enlargement of a base board, can deposit deposition membranes of film-forming patterns by using the deposition mask in a wide range by relatively moving even the deposition mask which is smaller in size than the base board in a state that the base board is separated, can prevent the overlap of the film-forming patterns, can suppress the incidence of radiation heat from an evaporation source, and can perform deposition at high accuracy and at a high rate; and to provide a deposition method.SOLUTION: The deposition device is characterized in that: a mask holder 6 having a scatter limit part at a limiting opening 5 is arranged between the evaporation source 1 and the base board 4; the evaporation mask 2 is joined and additionally attached to the mask holder 6; the base board 4 is relatively and movably constituted while holding a separation state with the deposition mask 2 with respect to the mask holder 6 attached with the evaporation mask 2 and the evaporation source 1; and an evaporation opening 8 of the evaporation source 1 is formed into a slit shape which is long in the relative movement direction of the base board 4 and narrowed in width toward the lateral direction orthogonal to the relative movement direction.

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate.

  In recent years, organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.

  This organic EL display device has a structure in which an electrode layer and a plurality of organic light emitting layers are laminated on a substrate, and further a sealing layer is formed on the substrate. Corners and high contrast can be realized.

  Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.

  Further, in the manufacture of such an organic EL device, the vapor deposition mask for obtaining a desired film formation pattern is enlarged with an increase in the size of the substrate. For this increase in size, tension was applied to the vapor deposition mask. Since it must be manufactured by welding and fixing to the mask frame in the state, it is not easy to manufacture a large evaporation mask, and if this tension is not sufficient, the mask will be distorted and the center of the mask will be distorted. The degree of adhesion of the substrate is reduced, and the mask frame becomes large in order to take these into consideration, and the increase in thickness and weight becomes remarkable.

  As described above, it is required to increase the size of the vapor deposition mask as the substrate size increases. However, it is difficult to increase the size of the high-definition mask. Has produced.

  Further, as shown in, for example, Japanese Translation of PCT International Application No. 2010-511784, the substrate and the vapor deposition mask are spaced apart from each other, and the organic light emitting layer is made high by an evaporation source and an opening for generating evaporated particles having directivity. Although there is a method of forming a film with high accuracy, the evaporation source and the opening for generating directivity have an integrated structure, and the integrated structure is heated to a high temperature to generate evaporated particles from the opening. Therefore, radiation heat from the evaporation source is received by the vapor deposition mask, and it is impossible to prevent a decrease in the position accuracy of the film formation pattern due to thermal expansion of the vapor deposition mask.

  Furthermore, by arranging the substrate and the vapor deposition mask so that they are spaced apart and relatively moved, a desired film formation pattern can be vapor-deposited over a large area even with a small vapor deposition mask. In order to provide this, there has been a problem that the diameter of the evaporation source opening must be reduced and the evaporation rate cannot be increased.

Special table 2010-511784 gazette

  The present invention solves these various problems, and does not increase the size of the vapor deposition mask to the same size as the substrate is enlarged. Evaporation film with a deposition pattern can be deposited using a deposition mask, and the structure can be simply and efficiently deposited by moving it in a separated state, and the limiting opening can be used as an evaporation source even in the separated state. By providing it between the vapor deposition mask, it is possible to limit the scattering direction of the evaporated particles and prevent the evaporated particles from passing through the evaporation port at the adjacent or remote positions so as not to overlap the film formation patterns. The mask holder has an evaporation mask attached to a mask holder with a scattering restriction provided with an opening, and this mask holder not only serves as a scattering restriction but also suppresses the incidence of radiant heat from the evaporation source. The evaporation port portion of the evaporation source has a configuration in which the substrate and the evaporation mask are relatively moved in a separated state by forming a slit shape that is long in the relative movement direction of the substrate and narrow in the lateral direction perpendicular thereto. It is an object of the present invention to provide a vapor deposition apparatus and a vapor deposition method that can perform high-accuracy and high-rate vapor deposition.

  The gist of the present invention will be described with reference to the accompanying drawings.

  A film forming material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4. In the vapor deposition apparatus configured as described above, scattering of the evaporated particles of the film forming material evaporated from the evaporation source 1 is between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1. A mask holder 6 having a scattering restriction portion provided with a restriction opening portion 5 for restricting the direction is provided, and the substrate 4 and the vapor deposition mask 2 provided in a separated state are joined to the mask holder 6 and attached. The substrate 4 is configured to be relatively movable with respect to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining a separated state from the vapor deposition mask 2. The evaporation port 8 is formed of the substrate Those of the vapor deposition apparatus characterized by laterally to a long perpendicular to the relative movement direction is narrow slit-like.

  Further, the evaporation source 1 containing the film forming material and the mask through which the evaporation particles of the film forming material evaporated from the evaporation port 8 of the evaporation source 1 pass in the vapor deposition chamber 7 in a reduced pressure atmosphere. The vapor deposition mask 2 provided with the opening 3 is disposed, a plurality of the evaporation port portions 8 are arranged in parallel, and the plurality of evaporation port portions 8 are arranged on the substrate 4 which is aligned with the vapor deposition mask 2 in a separated state. The vaporized particles scattered from the vapor are deposited through the mask opening 3 and a vapor deposition film having a film formation pattern determined by the vapor deposition mask 2 is formed on the substrate 4. The scattering restricting portion provided with the restricting opening portion 5 that does not allow the evaporated particles from the evaporation port portion 8 adjacent to or away from the source 4 and the substrate 4 disposed in an opposing state to pass through. The mask holder 6 to be configured is disposed, and this The vapor deposition mask 2 disposed in a state of being separated from the substrate 4 is attached to the holder 6, and the vapor deposition mask 2 is attached to the substrate 4 and the evaporation source 1 with respect to the mask holder 6 provided with the vapor deposition mask 2. In this relative movement direction, the deposition film of the deposition pattern of the deposition mask 2 is continued in this relative movement direction, and a deposition film is formed over a wide range even with the deposition mask 2 smaller than the substrate 4. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured as described above.

  In addition, a plurality of the evaporation port portions 8 of the evaporation source 1 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4 and the restriction opening portion of the scattering restriction portion provided in the mask holder 6 5 are arranged side by side along the lateral direction, and the evaporated particles evaporating from the respective evaporation port portions 8 pass only through the opposed limiting opening 5 and further face the limiting opening 5. A vapor deposition film of the film formation pattern is formed on the substrate 4 through the mask opening 3 of the vapor deposition mask 2 so that the vaporized particles from the vaporization port 8 at adjacent or separated positions are attached and captured. The vapor deposition apparatus according to any one of claims 1 and 2, wherein the restriction opening 5 restricts the scattering direction of the evaporated particles.

  The vapor deposition apparatus according to any one of claims 1 to 3, wherein the vapor deposition mask 2 is attached to an end portion of the mask holder 6 on the substrate 4 side.

  The vapor deposition apparatus according to claim 4, wherein a tension is applied to the vapor deposition mask 2 at an end of the mask holder 6 on the substrate 4 side.

  The vapor deposition apparatus according to claim 5, wherein the mask holder 6 stretches the vapor deposition mask 2 by applying a tension in a relative movement direction of the substrate 4.

  The vapor deposition mask 2 is divided into a plurality of pieces in the lateral direction orthogonal to the relative movement direction of the substrate 4, and the divided vapor deposition mask 2 is attached to the mask holder 6 in the lateral direction. It concerns on the vapor deposition apparatus of any one of Claims 1-6 characterized by the above-mentioned.

  In addition, a plurality of the evaporation ports 8 of the evaporation source 1 are arranged in the lateral direction perpendicular to the relative movement direction of the substrate 4, and the restriction opening is set to be opposed to each of the one or a plurality of evaporation ports 8. The deposition mask 2 is attached to an end of the mask holder 6 on the substrate 4 side so as to cover each restriction opening 5 of the mask holder 6 having the scattering restriction portion provided with the portion 5. It concerns on the vapor deposition apparatus of any one of Claims 4-7.

  The mask holder 6 extends in the relative movement direction of the substrate 4 and deforms the mask holder 6 due to tension applied to the vapor deposition mask 2 when the vapor deposition mask 2 is stretched on the mask holder 6. In order to prevent, the rib part 24 which improves the rigidity of the mask holder 6 in the extending direction is provided between the restricting opening parts 5. This relates to the described vapor deposition apparatus.

  The restriction openings 5 are provided on the front end surfaces of the ribs 24 extending in the relative movement direction of the substrate 4 between the restriction openings 5 of the mask holder 6. The vapor deposition apparatus according to any one of claims 1 to 9, wherein a mask mounting support surface 23 for supporting and bonding the vapor deposition mask 2 is provided.

  The mask holder (6) is characterized in that the restriction opening (5) is formed so that the opening area on the evaporation source 1 side is smaller than the opening area on the substrate 4 side. It concerns on the vapor deposition apparatus of any one of these.

  When the substrate 4 and the vapor deposition mask 2 are vapor-deposited in a separated state, and the vapor deposition film of the film formation pattern is formed on the substrate 4 by the vapor deposition mask 2, the shadow SH which is a side edge inclined portion of the vapor deposition film. Where G is the gap between the substrate 4 and the vapor deposition mask 2, φx is the lateral opening width of the evaporation port 8, and TS is the distance between the evaporation port 8 and the vapor deposition mask 2. The gap G is set large and the opening width φx of the evaporation port 8 is set small so that the shadow SH does not reach the interval PP between the adjacent deposited films. It concerns on the vapor deposition apparatus of any one of Claims 1-11 characterized by the above-mentioned.

  In addition, the evaporation source 1 includes an evaporation particle generation unit 26 that heats the evaporation material, a horizontally long diffusion unit 27 in which the evaporation particles generated from the evaporation particle generation unit 26 diffuse and uniformize the pressure, and the horizontally long diffusion And a plurality of the evaporation ports 8 arranged in the lateral direction perpendicular to the relative movement direction of the substrate 4, and one evaporation source 1 is arranged in the lateral direction perpendicular to the relative movement direction of the substrate 4. Alternatively, the vapor deposition apparatus according to claim 1, wherein a plurality of the vapor deposition apparatuses are arranged in parallel.

  14. The heat blocking part 19 for blocking the heat of the evaporation source 1 is disposed around at least one of the laterally long diffusion part 27 and the periphery of the evaporation port part 8. The present invention relates to any one of the vapor deposition apparatuses.

  In addition, the horizontally long diffusing portion 27 is provided with an introducing portion 28 in which the evaporated particles diffused by the horizontally long diffusing portion 27 are scattered with directivity when ejected from the evaporation port 8. It concerns on the vapor deposition apparatus of any one of Claims 1-14.

  Further, the plurality of evaporation port portions 8 are provided on the front end surface of the introduction portion 28 on the substrate 4 side, and the introduction length of the introduction portion 28 toward the substrate 4 side is defined as the relative movement direction of the substrate 4. 16. The vapor deposition apparatus according to claim 15, wherein the length is longer than the width of the introduction portion 28 in the transverse direction perpendicular to the vertical direction.

  17. The vapor deposition apparatus according to claim 15, wherein the introduction portion 28 is disposed so as to protrude from the laterally long diffusion portion 27 toward the substrate 4. is there.

  A plurality of the mask openings 3 of the vapor deposition mask 2 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, and each mask opening 3 is a slit long in the relative movement direction. A plurality of openings are formed in the relative movement direction, and the total opening length in the relative movement direction is set to be longer as the distance from the central portion of the restriction opening 5 is longer in the lateral direction. It concerns on the vapor deposition apparatus of any one of Claims 1-17 characterized by the above-mentioned.

  Further, a film thickness correction plate 29 is provided on the substrate 4 side of the vapor deposition mask 2 so as to block a part of the mask opening 3 and set an opening range of each mask opening 3. It concerns on the vapor deposition apparatus of any one of Claims 1-18.

  Further, the formation interval Mpx in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film formation pattern deposited on the substrate 4 is the substrate 4 and the vapor deposition mask 2. Is G, the distance between the vapor deposition mask 2 and the evaporation port 8 is TS, and the formation interval in the lateral direction orthogonal to the relative movement direction of the substrate 4 of the film formation pattern is Px. The opening dimension Mx in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 is set to be narrower than the film formation pattern formation interval Px. When the gap with the mask 2 is G, the distance between the vapor deposition mask 2 and the evaporation port 8 is TS, and the film formation width in the film formation pattern of the vapor deposition film is represented by the following formula (3), the vapor deposition: Membrane Those of the vapor deposition apparatus according to any one of claims 1 to 19, characterized in that set wider than layer pattern width P.

  21. The vapor deposition according to any one of claims 1 to 20, further comprising an exchange chamber 16 in which the mask holder 6 to which the vapor deposition mask 2 is attached can move reciprocally with the vapor deposition chamber 7. It concerns the device.

  2. The cleaning chamber according to claim 1, further comprising a cleaning mechanism for cleaning the film deposition material attached to at least one of the mask holder or the vapor deposition mask attached to the mask holder in the exchange chamber. 21. The vapor deposition apparatus according to any one of items 21 to 21.

  2. A material recovery mechanism for recovering a film forming material attached to at least one of the mask holder 6 or the vapor deposition mask 2 attached to the mask holder 6 in the exchange chamber 16. It concerns on the vapor deposition apparatus of any one of -22.

  Further, a plurality of the evaporation port portions 8 of the evaporation source 1 disposed in a state of being opposed to the restriction opening 5 are arranged in parallel in the lateral direction perpendicular to the relative movement direction of the substrate 4, and the plurality of evaporations arranged in parallel. Considering the gap G between the substrate 4 and the vapor deposition mask 2, the distance TS between the evaporation port 8 and the vapor deposition mask 2, and the gap between the mask openings 3 of the vapor deposition mask 2. The evaporation particles evaporated from the evaporation port 8 that has passed through the mask opening 3 and the evaporation particles evaporated from the adjacent evaporation port 8 that has passed through the adjacent mask opening 3 are The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured to be superimposed on the substrate 4.

  Further, a plurality of the evaporation port portions 8 of the evaporation source 1 disposed in a state of being opposed to the restriction opening 5 are arranged in parallel in the lateral direction perpendicular to the relative movement direction of the substrate 4, and the plurality of evaporations arranged in parallel. Considering the gap G between the substrate 4 and the vapor deposition mask 2, the distance TS between the evaporation port 8 and the vapor deposition mask 2, and the gap between the mask openings 3 of the vapor deposition mask 2. Accordingly, the mask opening 3 in the lateral direction perpendicular to the relative movement direction of the substrate 4 in the restriction opening 5 is arranged so as to face the same restriction opening 5. 25. The structure according to any one of claims 1 to 24, wherein the number of the portions 8 is less than the number of film formation patterns in the lateral direction perpendicular to the relative movement direction of the substrate 4 and is evenly spaced. This relates to the vapor deposition apparatus.

  The vapor deposition mask 2 attached to the mask holder 6 is the first vapor deposition mask 2, and the second vapor deposition mask 10 is disposed between the substrate 4 and the first vapor deposition mask 2. It concerns on the vapor deposition apparatus of any one of Claims 1-25 characterized by these.

  The number of mask openings 11 of the second vapor deposition mask 10 in the lateral direction perpendicular to the relative movement direction of the substrate 4 disposed in the restriction opening 5 is the number of the second vapor deposition mask 10. More than the number of the mask openings 3 of the first vapor deposition mask 2 in the lateral direction orthogonal to the relative movement direction of the substrate 4 disposed in the same restriction opening 5 on the evaporation source 1 side. The mask openings 3 and 11 of the respective vapor deposition masks 2 and 10 have different formation intervals corresponding to the difference in distance from the substrate 4, and the mask openings 11 of the second vapor deposition mask 10 are masked. 27. The vapor deposition apparatus according to claim 26, wherein the opening width is the same as or narrower than that of the first vapor deposition mask.

  The second vapor deposition mask 10 is formed of a material having a larger linear expansion coefficient than the first vapor deposition mask 2 located on the evaporation source 1 side. It concerns on the vapor deposition apparatus of any one of these.

  29. The second vapor deposition mask 10 according to any one of claims 26 to 28, wherein the second vapor deposition mask 10 is formed by electroforming.

  The number of the mask openings 11 of the second vapor deposition mask 10 in the lateral direction perpendicular to the relative movement direction of the substrate 4 disposed in the restriction opening 5 is the same as the restriction opening. The number of mask openings 3 of the first vapor deposition mask 2 in the lateral direction perpendicular to the relative movement direction of the substrate 4 provided in the part 5 is arranged in the same restriction opening 5. 30. The vapor deposition apparatus according to any one of claims 26 to 29, wherein the vapor deposition apparatus is formed in a large number according to the number of the evaporation port portions 8.

  31. The vapor deposition apparatus according to claim 1, wherein the film forming material is an organic material.

  Moreover, the vapor deposition method of forming the vapor deposition film of the film-forming pattern defined by the said vapor deposition mask 2 on the said board | substrate 4 using the vapor deposition apparatus of any one of the said Claims 1-31. It is related to.

  Since the present invention is configured as described above, even if the deposition mask is not enlarged as the substrate is enlarged, the deposition mask can be widely used by relatively moving the substrate in a separated state even if the deposition mask is smaller than the substrate. Vapor deposition film can be deposited, and the structure can be simply and efficiently deposited by moving relative to each other in the separated state, and the limiting opening can be formed between the evaporation source and the vapor deposition mask even in the separated state. By limiting the direction in which the evaporated particles are scattered, it is possible to prevent the overlapping of the film formation patterns without passing the evaporated particles from the adjacent or distant evaporation ports. Highly accurate vapor deposition is possible with a configuration in which a vapor deposition mask is bonded to a mask holder having a scattering restriction provided, and the substrate and vapor deposition mask are relatively moved apart. Also, by narrowing the opening width of the evaporation port of the evaporation source, the shadow of the film formation pattern (which also changes depending on the size of the gap between the substrate and the evaporation mask and the distance between the evaporation source and the evaporation mask) (side of the evaporation film) The vapor deposition apparatus and vapor deposition method can further reduce the amount of protrusion of the end inclined portion and increase the evaporation rate by increasing the opening length of the evaporation port portion in the relative movement direction.

  Especially in the manufacture of organic EL devices, it is possible to cope with the increase in size of the substrate, the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It becomes the vapor deposition apparatus and vapor deposition method for organic EL device manufacture which can implement | achieve vapor deposition of this.

  Further, in the invention described in claim 2, the function and effect of the present invention can be exhibited more satisfactorily, and the vapor deposition apparatus is further excellent in practicality.

  According to a third aspect of the present invention, a plurality of the evaporation ports and the restriction openings are arranged in parallel in a lateral direction perpendicular to the relative movement direction of the substrate, so that the evaporated particles at adjacent positions do not pass. It becomes the outstanding vapor deposition apparatus which can vapor-deposit on the board | substrate of a large area by the structure which prevents the overlap of the film-forming pattern.

  In the inventions according to claims 4 and 5, since the vapor deposition mask is attached to the mask holder at the end of the substrate side farthest from the evaporation source, the incidence of radiant heat from the evaporation source can be suppressed, and the vapor deposition mask By applying a tension equal to or higher than the thermal stress to the film, it is stably maintained.

  According to the sixth aspect of the invention, since tension is applied in the relative movement direction of the substrate to the vapor deposition mask, the vapor deposition mask does not bend and film formation errors caused by the deflection are eliminated.

  Further, in the invention described in claim 7, since even a small vapor deposition mask divided into a plurality of sheets can be formed on a large substrate, the vapor deposition mask can be easily created.

  Further, in the invention described in claim 8, vapor deposition masks having individually set mask openings are arranged side by side so as to achieve uniformity in each vapor deposition region based on the film thickness distribution characteristics of each evaporation port portion. Or the vapor deposition mask can be individually replaced, which makes it more practical.

  According to the ninth and tenth aspects of the present invention, the rib portion provided extending in the relative movement direction of the substrate can prevent the mask holder from being deformed by the tension of the deposition mask and can maintain the tension of the deposition mask. In addition, by providing a mask mounting support surface, it is possible to firmly support and join the vapor deposition mask to the mask holder.

  In the invention described in claim 11, the film forming material evaporated from the evaporation source is obtained by making the shape of the restriction opening of the mask holder smaller than the opening area on the substrate side. More evaporation particles can be captured on the evaporation source side of the restriction opening, so that the film forming material adhering to the side of the restriction opening can be reduced, and the attached film after replacing the mask holder can be reduced. Easy material peeling and recovery.

  Further, in the invention described in claim 12, by reducing the opening width of the evaporation port portion, for example, when forming an RGB light emitting layer, it is a shadow that reaches an adjacent vapor deposition pattern (adjacent pixel). In addition, by narrowing the opening width of the evaporation port portion in this way, the gap between the substrate and the vapor deposition mask can be increased, and the mask mounting support surface between the aforementioned limiting opening portions can be widened. The vapor deposition mask itself can be provided with a temperature control mechanism, which makes it an excellent vapor deposition apparatus.

  Further, in the invention described in claim 13, by providing a horizontally long diffusion portion in the evaporation source and arranging a plurality of evaporation ports in parallel therewith, the pressure is uniformed among the plurality of evaporation ports arranged in parallel. Can be planned. Further, when vapor deposition is performed on a large substrate, a plurality of evaporation sources having small diffusion chambers are arranged side by side in a lateral direction perpendicular to the relative direction of the substrate so that the pressure in the diffusion chamber becomes more uniform. May be.

  Further, in the invention described in claim 14, a heat shut-off unit (functioning as a temperature control unit provided in the evaporation source) such as a cooling member is provided around the evaporation source to block radiant heat from the evaporation source. By doing, the temperature rise of a vapor deposition mask can be suppressed.

  Further, in the inventions according to claims 15 and 16, the amount of material used for film formation of the evaporated particles ejected from one evaporation port portion is improved as compared with the evaporated particles having a low directivity with the increased directivity of the evaporated particles. Are the same, the scattering angle of the evaporated particles within the effective range of film formation is reduced as a whole, and the incident angle at which the evaporated particles are incident on the vapor deposition mask opening is also reduced as a whole. The amount of change in the film forming pattern position with respect to the gap variation can be reduced.

  Further, in the invention described in claim 17, it is possible to dispose the heat shut-off portion closer to the evaporation source side than the evaporation port portion by disposing the introduction portion so as to protrude from the horizontally long diffusion portion toward the substrate side. Thus, even if a heat blocking part is provided between the evaporation ports, the evaporated particles do not adhere to the heat blocking part, resulting in a vapor deposition apparatus with high material use efficiency and maintainability.

  Further, in the invention of claim 18, the vapor deposition film having a film formation pattern determined by the horizontal arrangement of the mask opening portions of the vapor deposition mask is formed according to the relative movement direction of the substrate. Since the total opening length that is long in the relative movement direction of the substrate is set to be longer as the distance from the central portion of the opening for restriction (for example, the position facing the evaporation port portion) is increased in the horizontal direction, However, the film thickness can be made uniform by increasing the opening length correspondingly.

  According to the nineteenth aspect of the present invention, when it is necessary to correct the film thickness after bonding the vapor deposition mask to the mask holder, the vapor deposition mask is not replaced by providing a correction plate on the substrate side. The film thickness can be made uniform, or the film thickness can be adjusted with a correction plate using a vapor deposition mask having the same slit length in the relative movement direction of the substrate from the beginning.

  Further, in the invention described in claim 20, the formation interval in the lateral direction perpendicular to the relative movement direction of the mask opening of the vapor deposition mask for determining the film deposition pattern deposited on the substrate is the gap between the substrate and the vapor deposition mask. And the distance between the vapor deposition mask and the evaporation port and the film formation pattern formation interval in the lateral direction perpendicular to the relative movement direction of the substrate of the vapor deposition film, and set to be narrower than the film formation pattern formation interval. The opening dimension (mask opening width) in the lateral direction orthogonal to the relative movement direction of the substrate of the opening is the gap between the substrate and the evaporation mask, the distance between the evaporation mask and the evaporation port, and the deposition pattern of the evaporation film. It is determined by the width, and by setting it wider than the film formation pattern width of the vapor deposition film, the substrate and the vapor deposition mask are separated from each other, and even if there is a gap between them, the position of the film formation pattern may be shifted. It prevents the width of the deposition pattern is shifted or can be the formation accuracy of deposition pattern with high precision.

  In the invention of claim 21, the mask holder provided with the vapor deposition mask is provided with an exchange chamber that can reciprocate with the vapor deposition chamber, so that the mask holder can be easily carried in and out, and the film formation accompanying the exchange of the mask holder is performed. The stop time of the process is shortened, and the operation rate of the vapor deposition apparatus is improved.

  Further, in the invention described in claim 22, since the exchange chamber is provided with a cleaning mechanism, the film forming material adhering to the mask holder or the vapor deposition mask can be cleaned in the vapor deposition apparatus, and the mask holder and the vapor deposition mask are reused. Can be easily used.

  Further, in the invention described in claim 23, since the exchange chamber is provided with a material recovery mechanism, the material can be recovered and reused. For example, the rib portion of the mask holder as in the invention described in claim 11 can be used. By increasing the size of the evaporation source side, material adheres to the evaporation source side end portion of the mask holder, and separation and recovery are further simplified.

  In the invention according to claim 24, the vapor deposition rate is increased by superimposing the vaporized particles from a plurality of vaporization openings arranged side by side on the substrate, and the vapor deposition apparatus has high productivity.

  Further, in the invention of claim 25, by arranging a plurality of evaporation port portions arranged opposite to the restriction opening portion, the evaporated particles evaporated from the plurality of evaporation port portions pass through one mask opening. Since the number of mask openings that determine the film formation pattern can be reduced and the interval between mask openings can be increased, the mechanical strength of the evaporation mask can be increased, and the destruction and adhesion of the mask during cleaning can be prevented. In addition, since the mask mounting support surface can be secured widely, the deposition mask and the mask holder can be joined more firmly, and the installation area of the cooling medium path or heat pipe provided in the deposition mask as a temperature control mechanism can be increased, from the evaporation source. The temperature rise of the vapor deposition mask due to the radiant heat can be prevented.

  In the invention described in claim 26, by providing the second vapor deposition mask, the incidence of radiant heat from the evaporation source is suppressed by the first vapor deposition mask, and then the opening pattern of the second vapor deposition mask is formed. Since a film can be formed, vapor deposition with higher accuracy can be performed while suppressing the temperature rise of the second vapor deposition mask.

  In the invention according to claim 27, it becomes a vapor deposition apparatus capable of preventing shadows more reliably and performing high-precision vapor deposition.

  Further, in the invention described in claim 28, the temperature of the vapor deposition mask is increased by a vapor deposition mask, a mask holder having a scattering restriction portion provided with a restriction opening to be joined thereto, and a temperature control mechanism provided in the mask holder in some cases. Since the temperature can be kept constant while suppressing the temperature, the second vapor deposition mask provided between the vapor deposition mask and the substrate can be made of a material having a large linear expansion coefficient because the temperature is further unlikely to rise.

  In the invention described in claim 29, when the second mask is formed by electroforming, a highly accurate mask opening can be formed, thereby providing a vapor deposition apparatus capable of forming a pattern with higher accuracy.

  Further, in the invention of claim 30, by widening the opening interval of the first vapor deposition mask, the radiant heat incident from the first mask opening can be reduced, and the thermal expansion of the second mask is further increased. Can be suppressed. Moreover, even if the opening interval of the first vapor deposition mask is the same, a high-definition film formation pattern can be vapor-deposited by narrowing the second mask opening width.

  Further, in the invention described in claim 31, it becomes an organic material evaporation apparatus, and is more practical. Moreover, in the invention of Claim 32, it becomes the outstanding vapor deposition method which exhibits the said effect | action and effect.

It is the rough explanatory front view which cut the principal part of a present Example. It is a description perspective view of the evaporation source of a present Example. It is explanatory perspective view which shows another example of the evaporation source of a present Example. It is explanatory drawing which shows that the shadow of a vapor deposition film can be suppressed by narrowing the opening width | variety of the evaporation port part of the evaporation source which has arrange | positioned the introducing | transducing part of this Example in a horizontally long diffusion part, and this can take a gap large. is there. It is the explanation side view which cut the important section of this example. It is a graph which shows the difference in the film thickness distribution of the Y-axis direction when the evaporation port part shown in FIG. It is an expansion explanatory top view of the vapor deposition mask of a present Example. It is an expansion explanatory top view which shows another example of the vapor deposition mask of a present Example. It is explanatory drawing which shows the scattering angle (theta) of the evaporation particle | grains in the certain position x of a present Example. It is a graph which shows that the film thickness distribution of a present Example becomes distribution based on a cosine law, and according to this, the mask opening length of a mask opening part is corrected and set so that it leaves | separates from a center part in a horizontal direction. It is an expansion explanatory top view of the film thickness correction plate of a present Example. It is explanatory drawing which shows that the formation pitch of the horizontal direction of the mask opening part of the vapor deposition mask of a present Example is made slightly narrower than the film-forming pattern pitch. It is explanatory drawing which shows that the opening width of the horizontal direction of the mask opening part of the vapor deposition mask of a present Example is made a little wider than the film-forming pattern width. It is explanatory drawing which shows that the mask attachment support surface of the rib part between the opening parts for a restriction | limiting of the mask holder of a present Example can be taken widely. It is explanatory drawing which shows the case where the evaporation particle | grains from the several evaporation port part of a 2nd Example overlap and vapor-deposit on a board | substrate. It is explanatory drawing which shows that the odd-number evaporation port part is arrange | positioned in the opening part for restriction | limiting of 3rd Example, and the number of mask opening parts can be reduced. It is explanatory drawing which shows that the even number of evaporation opening part is arrange | positioned in the opening part for restriction | limiting of 3rd Example, and the number of mask opening parts can be reduced. In the configuration in which an odd number of evaporation openings are provided in the restriction openings of the third embodiment shown in FIG. 16, when the mask opening intervals are halved, the film forming pattern intervals are also halved. It is explanatory drawing which shows that it can be performed. It is explanatory drawing which shows arrange | positioning a medium path and a heat pipe between the mask openings which reduced the number of the mask openings of 3rd Example. It is explanatory drawing which shows that the contact area of the medium path or heat pipe shown in FIG. 19 and a vapor deposition mask can be increased. It is explanatory drawing which shows that a mask attachment support surface can be widened by reducing the number of mask openings of a 3rd Example. It is explanatory drawing in which the number of mask opening parts of the 1st vapor deposition mask in the opening part for restriction | limiting in the 4th Example (Example which provided the 2nd vapor deposition mask) and the 2nd vapor deposition mask are the same, and formation intervals differ. It is explanatory drawing which arrange | positioned three evaporation ports in the opening part for restriction | limiting of 4th Example (Example which provided the 2nd vapor deposition mask).

  An embodiment of the present invention which is considered to be suitable will be briefly described with reference to the drawings showing the operation of the present invention.

  In FIG. 1, the film-forming material evaporated from the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 configured as a scattering restriction part, and onto the substrate 4 through the mask opening 3 of the vapor deposition mask 2. After deposition, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.

  At this time, the substrate 4 and the vapor deposition mask 2 are arranged in a separated state, and the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state. Thus, by relatively moving the substrate 4, a deposition film having a deposition pattern defined by the deposition mask 2 is formed on the substrate 4 in a wider range than the deposition mask 2 itself.

  Further, a mask holder 6 having a scattering restriction portion provided with the restriction opening 5 for restricting the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation source 1 between the vapor deposition mask 2 and the evaporation source 1. To prevent the deposition patterns from overlapping even if the vapor deposition mask 2 and the substrate 4 are in a separated state without allowing the vaporized particles from the vaporization openings 8 adjacent or separated by the restriction opening 5 to pass therethrough. is doing.

  Furthermore, since the vapor deposition mask 2 is joined and attached to the mask holder 6 constituting the scattering restriction portion, the incidence of heat from the evaporation source 1 is suppressed and the temperature rise of the mask holder 6 and the vapor deposition mask 2 is increased. In addition, even when the vapor deposition mask 2 is separated from the substrate 4, since the heat of the vapor deposition mask 2 is conducted to the mask holder 6 by being bonded to the mask holder 6, the vapor deposition mask 2 is kept at a constant temperature. The temperature holding function to hold is improved.

  Further, for example, if a temperature control mechanism for holding the temperature of the vapor deposition mask 2 is provided in at least one of the mask holder 6 or the vapor deposition mask 2 as necessary, the temperature rise of the mask holder 6 or the vapor deposition mask 2 is further suppressed. Thus, the temperature holding function for holding the single-layer vapor deposition mask 2 at a constant temperature is improved.

  Therefore, the mask holder 6 having the scattering restriction portion also functions as a temperature holding function at the same time as the function of restricting the scattering direction of the evaporated particles, can suppress the temperature rise of the vapor deposition mask 2, and keep the vapor deposition mask 2 at a constant temperature. This also prevents distortion of the vapor deposition mask 2 due to heat.

  Accordingly, the substrate 4 is moved relative to the vapor deposition mask 2, the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state from the vapor deposition mask 2, thereby the above-described vapor deposition mask 2. A vapor deposition film having a film formation pattern is formed continuously in this relative movement direction, and a vapor deposition film is formed over a wide range even with a vapor deposition mask 2 smaller than the substrate 4 and is incident on the adjacent or away from the evaporation port 8. Overlapping of film formation patterns, distortion due to heat, etc. are sufficiently suppressed, and a vapor deposition apparatus capable of performing highly accurate vapor deposition is obtained.

  Further, by narrowing the opening width φx of the evaporation port 8 of the evaporation source 1, the shadow SH of the film formation pattern (the amount of protrusion of the inclined portion on the side edge of the vapor deposition film) can be further suppressed, and the evaporation port 8 The evaporation rate can be increased by lengthening the opening length in the relative movement direction.

  A first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is an overall view of the schematic apparatus.

  In this embodiment, an evaporation source 1 in which a film forming material (for example, an organic material for manufacturing an organic EL device) is housed in an evaporation chamber 7 (for example, in a vacuum chamber 7) in a reduced pressure atmosphere, and the evaporation source A substrate that is provided with a deposition mask 2 provided with a mask opening 3 through which evaporated particles of the film-forming material evaporating from a plurality of evaporation ports 8 arranged side by side pass, and is aligned with the deposition mask in a separated state 4, the evaporated particles scattered from the plurality of evaporation ports 8 pass through the mask opening 3 and are deposited, and an evaporation film having a film formation pattern defined by the evaporation mask 2 is formed on the substrate 4. The scattering restricting portion provided with the restricting opening 5 that prevents the evaporated particles from the adjacent or distant evaporation port 8 from passing between the substrate 4 and the evaporation source 1 is configured as described above. A mask holder 6 is provided. The mask 4 is attached to the mask holder 6 with the deposition mask 2 disposed in a separated state from the substrate 4. The substrate 4 is attached to the mask holder 6 to which the deposition mask 2 is attached and the evaporation source 1. The vapor deposition film of the film formation pattern defined by the vapor deposition mask 2 is continuously formed on the substrate 4 in a range wider than the vapor deposition mask 2 by this relative movement direction. It is constituted so that.

  That is, as a configuration in which vapor deposition is performed with evaporated particles from the plurality of evaporation ports 8, vapor deposition can be performed on the substrate 4 having a large area, and from the evaporation ports 8 adjacent or separated by the restriction opening 5. Even if the vapor deposition mask 2 and the substrate 4 are separated from each other by preventing incidence, overlapping of the film formation patterns is prevented.

  In this embodiment, a plurality of evaporation sources 1 may be arranged side by side and the respective evaporation port portions 8 may be arranged in parallel. However, a configuration in which a plurality of evaporation port portions 8 are arranged in parallel on one horizontally long evaporation source 1 is adopted. The evaporation source 1 is composed of an evaporation particle generation unit 26 that heats the film forming material and a horizontally long diffusion unit 27 that diffuses the evaporation particles generated from the evaporation particle generation unit 26 to equalize the pressure, A plurality of the evaporation port portions 8 are arranged in the laterally long diffusion portion 27 in the lateral direction. To explain further, for example, the film-forming material is stored in the exchangeable particle generation unit 26 (crucible 26) by an automatic crucible exchange mechanism, and the vaporized particles heated and evaporated in the crucible 26 are temporarily stopped to equalize the pressure. The horizontally long diffuser 27 is provided, and a plurality of slit-like openings that are long in the relative movement direction and perpendicular to the transverse direction are formed on the top of the horizontally long diffuser 27 along the lateral direction. A large number of the evaporation port portions 8 are arranged in parallel.

  Further, each evaporation port 8 arranged in parallel in the horizontal direction is provided at the tip of the introduction part 28 protruding from the horizontally long diffusion part 27 of the evaporation source 1, and the evaporation is performed around the horizontal diffusion part 27 or between the introduction parts 28. A heat shut-off unit 19 that shuts off the heat of the source 1 is provided.

  The heat shut-off unit 19 may be any unit that shields heat, but this embodiment employs a cooling plate 9D, has a medium path for supplying a cooling medium, and the cooling medium receives heat from the evaporation source 1. A heat exchanging portion 20D for exchanging this heat through the medium path while taking the heat is provided to enhance the heat shielding effect.

  In addition, vaporized particles adhere to the vapor deposition mask 2 and the mask holder 6 one after another during film formation, and if used for a long time, there is a possibility that the film formation pattern may be affected. The replacement chamber 16 (for example, the replacement chamber 16) is arranged in parallel, and the mask holder 6 provided with the vapor deposition mask 2 can be removed from the vacuum chamber 7 so that the mask holder 6 can be easily carried in and out. The stop time of the film forming process accompanying the replacement of the holder 6 is shortened, and the operating rate of the vapor deposition apparatus is improved. Further, the replacement chamber 16 includes a cleaning mechanism for the mask holder 6 with the vapor deposition mask 2 to peel off the deposited film forming material, and the material collecting mechanism 17 collects and reuses the film forming material. Cleaning is performed to remove the film forming material and particles remaining on the surface of the mask holder 6 with the vapor deposition mask 2 after the film forming material is peeled off. Further, the mask holder 6 with the vapor deposition mask 2 may be configured to be cleaned by a cleaning mechanism without peeling and collecting the deposited film forming material, or the mask holder 6 with the vapor deposition mask 2 itself may be collected. May be exchanged.

  Further, in this embodiment, an organic EL display in which a plastic film is used with the substrate 4 as the transparent substrate 4 and a cathode, a plurality of light emitting layers made of an organic substance, and an anode layer are provided on the plastic film 4 is used. This method is also effective when a light emitting layer is deposited by a vacuum deposition method in a method of manufacturing by a roll-to-roll method.

  FIG. 2 is a perspective view of the evaporation source 1.

  The evaporation source 1 is provided with an introduction portion 28 that protrudes from the horizontally long diffusion portion 27 at the tip. By making the volume of the horizontally long diffusion part 27 sufficiently larger than the opening area of the evaporation port 8 from which the evaporated particles are ejected, the evaporated particles heated by the crucible 26 are diffused by the horizontally long diffusion part 27 and the pressure becomes uniform. As a result, the ejection pressure at which the evaporated particles from each evaporation port 8 are ejected becomes uniform.

  Further, by making the protruding length of the introducing portion 28 protruding toward the substrate 4 side of each evaporation port portion 8 longer than the width length of the introducing portion 28 in the lateral direction perpendicular to the relative movement direction of the substrate 4, By increasing the directivity of the evaporation particles in the lateral direction perpendicular to the relative movement direction of the substrate 4 and at the same time providing a wide opening of the evaporation port 8 in the relative movement direction with respect to the substrate 4, the evaporation rate is increased and produced. It becomes a highly efficient vapor deposition apparatus.

  Further, as shown in FIG. 3, the introduction portion 28 may be arranged in the horizontally long diffusion portion 27. At this time, the evaporation material adheres to the heat shield portion 19, so that the evaporation port portion It is desirable not to dispose the heat shield 19 between the eight.

  Further, if the value of the inner angle R of the opening shape of the evaporation port 8 is large, the generation of evaporation particles from the corner portion is reduced and the evaporation rate is lowered. Therefore, the inner angle R of the opening shape of the evaporation port 8 is reduced. A smaller value is desirable.

Specifically, when the length (φy) of the evaporation port 8 relative to the substrate 4 in the relative movement direction is 30 mm and the length (φx) in the horizontal direction orthogonal to the substrate 4 is 2 mm, the evaporation port without the inner angle R 8 and that of the evaporation port portion having an inner angle R of 1 mm. Since the evaporation rate is approximately proportional to the opening area of the evaporation port 8, when compared with the opening area, the opening area is 60 mm ² when the inner angle R is not present, and (56 + π) mm ² when the inner angle R is 1 mm. , About 1.4% evaporation rate decreases.

  Further, when the substrate 4 and the vapor deposition mask 2 are arranged in a separated state and formed into a film, as shown in FIG. 4, shadows (SH) which are inclined portions at both end portions of the vapor deposition film are generated. When the gap between the substrate 4 and the vapor deposition mask 2 is G, the lateral opening width of the evaporation port 8 is φx, and the distance between the evaporation port 8 and the vapor deposition mask 2 is TS, the following equation (1) is satisfied. It is configured so that the gap G can be set large by setting the opening width φx of the evaporation port 8 small so that the shadow SH does not reach the interval PP between the adjacent vapor deposition films.

  Specifically, when the shadow SH is set to 0.03 mm or less, the TS is set to 100 to 300 mm, and the φx is set to 0.5 to 3 mm, the gap G can be secured to 1 mm or more.

  For example, if the TS is 100 mm and the φx is 3 mm, the gap G is 1 mm. If the TS is 100 mm and the φx is reduced to 0.6 mm, the gap G can be 5 mm. Further, when the TS is 300 mm, the φx is 3 mm, and the gap G is 1 mm, the shadow SH can be reduced to 0.01 mm, and a higher-definition film forming pattern may be supported.

  Further, when a plurality of evaporation sources 1 having evaporation ports 8 that are narrow in the lateral direction perpendicular to the relative movement direction of the substrate 4 are arranged side by side in the relative movement direction of the substrate 4, the substrate 4 and the vapor deposition mask 2 are separated from each other. Even if vapor deposition is performed, the evaporation rate can be increased while suppressing the shadow. However, the positional deviation of the film formation pattern becomes the sum of the positional deviations of the respective evaporation port portions 8, and the relative movement direction of the substrate 4 is increased. It is better to keep the number of evaporation ports 8 of the evaporation source 1 to be kept to a minimum.

  Therefore, in this embodiment, as shown in FIG. 2, there is one evaporation port 8 disposed in the relative movement direction of the substrate 4, and the evaporation port 8 is long in the relative movement direction of the substrate 4. The slit is narrow in the lateral direction perpendicular to this.

  Specifically, the film thickness (Å) at the time of transport film formation is represented by vapor deposition rate (Å / s) / moving speed (mm / s) × deposition mask slit length (mm). The lateral opening width φx of the evaporation port 8 is 1 mm, and the length of the substrate 4 in the relative movement direction φy is 1 mm (FIG. 5A) and 60 mm (FIG. 5). The case where the film was formed in (b)) was compared. It is assumed that the film thickness distribution evaporated from the evaporation port 8 and deposited on the substrate 4 is a distribution that approximates the cosine law cos θ to the 20th power. Assuming that the vapor deposition rate at the position facing the evaporation port 8 is 1 mm / s, the moving speed is 1 mm / s, and the length of the vapor deposition mask slit is 100 mm, the film thickness after transport film formation is when φy is 1 mm ( In FIG. 5 (a)), it is about 83.3 mm. For example, when the target film thickness of the deposited film is 400 mm, the moving speed is about 0.21 mm / s.

  However, when φy is 60 mm (FIG. 5B), φy of the evaporation port 8 is 60 times that of (FIG. 5A), so that at certain points a and b on the substrate 4. The incident angle θb of the evaporated particles to be deposited is 60 times θa. Therefore, similarly, when the target film thickness is 400 mm, the moving speed is about 12.5 mm / s, which is 60 times, and the productivity is improved.

  Strictly speaking, however, the evaporation rate within the film forming effective range when φy is 60 mm is not 60 times that of 1 mm, and is ejected from the evaporation port portion 8 toward the end symmetrically from the center of φy. Since the number of evaporated particles scattered in the restriction opening 5 space is reduced as compared with the central portion, the evaporation rate is lowered. More specifically, the evaporation rate at which the evaporation particles ejected from the point c of the evaporation port 8 in FIG. 5A are deposited at the point a on the substrate 4 is the evaporation port in FIG. Evaporated particles ejected from the point d of 8 become higher than the vapor deposition rate deposited at the point b similarly to the point a on the substrate 4. Therefore, as shown in FIG. 6, the film thickness distribution within the effective film formation range is wider in (b).

  Specifically, when the film thickness when φy is 60 mm is compared with the film thickness when φy is 60 times that of 1 mm, the film with φy of 60 mm is the same when the vapor deposition rate, the moving speed, and the length of the vapor deposition mask slit are the same. The thickness is reduced by about 4.1%.

  Further, as shown in FIGS. 7 and 8, the mask openings 3 of the vapor deposition mask 2 of this embodiment are arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate 4. The mask opening 3 is formed in a slit shape that is long in the relative movement direction or a plurality of openings are arranged in parallel in the relative movement direction, and the total opening length in the relative movement direction is longer than the lateral opening length. Yes.

  In other words, the mask openings 3 in each row of the vapor deposition mask 2 may be slit-like openings that are long in the relative movement direction. In order to increase the rigidity of the vapor deposition mask 2, the mask openings 3 are slits that are long in the relative movement direction. Small openings such as holes or small holes may be scattered in this direction to ensure a wide total opening length (total opening area).

  Further, the opening slit or the total opening length of the vapor deposition mask 2 is set so as to be longer as the distance from the central portion is increased in the lateral direction, and the vapor deposition rate becomes lower as the distance from the central portion is increased, but the film thickness of the vapor deposition film becomes constant It is set as follows.

  For example, as shown in FIGS. 9 and 10, when the scattering angle of the evaporated particles at a position x in the lateral direction (X-axis direction) orthogonal to the relative movement direction of the substrate 4 is θ, the cosine law at the position x. An approximate distribution obtained by multiplying (cos θ) by a power coefficient n, and considering the film thickness distribution in the relative movement direction (Y-axis direction) of the substrate 4, the formation length of the mask opening 3 of the vapor deposition mask 2 has a central portion. It is set to change symmetrically for a long time at the border.

  Specifically, the dimensions of the evaporation port 8 are, for example, the evaporation port opening width φx is 1 mm, the evaporation port slit length φy is 60 mm, and the lateral film thickness distribution perpendicular to the relative movement direction of the substrate 4 is cos θ. If the distribution approximates the 20th power, the film thickness distribution shown in FIG. 8 is obtained. When the incident angle of the evaporated particles on the vapor deposition mask 2 is increased, the influence of the above-described error is increased. Therefore, when the film is used for film formation up to a position where the film thickness is reduced to 80% of the center, −30 to +30 in the X-axis direction. A width of 60 mm is an effective film forming range for forming a film with one nozzle. Assuming that the formation length in the relative movement direction of the substrate 4 at the mask position facing the center of the opening of the evaporation port is 100 mm, the evaporation mask opening length at −30, +30 positions, which are both ends of the effective film formation range, is about 146 mm. As shown in FIG. 10, as the distance from the center to both ends increases, the mask opening length becomes symmetrical.

  In addition, as shown in FIG. 11, by using a gap G in which the substrate 4 and the vapor deposition mask 2 are separated from each other, the film thickness correction plate 29 is disposed on the substrate 4 side of the vapor deposition mask 2, so that the vapor deposition mask 2. Even if it is necessary to further correct the film thickness after bonding to the mask holder 6, the film thickness of the deposited film can be corrected without replacing the deposition mask 2. Similarly, the mask opening 3 of the vapor deposition mask 2 is not formed into a slit that is longer in the direction of relative movement of the substrate 4 as it moves away from the left and right ends, but is formed into the same slit and an opening is formed in a predetermined range as shown in FIG. The film thickness correction plate 29 may be used to correct the slit opening length shown in FIG.

  Further, as shown in FIG. 12, the formation pitch in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film formation pattern deposited on the substrate 4 is set to The pitch is set narrower than the pitch of the film formation pattern by a difference corresponding to the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation port 8 and the vapor deposition mask 2.

  Specifically, as shown in FIG. 12, the distance MPx from the mask position facing the evaporation port opening center of the evaporation source to the mask opening center is the center of the film forming pattern from the substrate position facing the evaporation port opening center. The distance Px is multiplied by α / (1 + α) (where α = TS / G).

  Therefore, for example, if the distance TS is 100 mm and the gap G is 1 mm, α is 100 and α / (1 + α) is about 0.99. Therefore, for example, if Px is 10 mm, MPx is 9.9 mm, and MPx is smaller than Px.

  That is, since the substrate 4 and the vapor deposition mask 2 are separated from each other, the vapor deposition mask 2 depends on the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation port 8 and the vapor deposition mask 2. The position of the vapor deposition film deposited on the substrate 4 through the mask opening 3 is shifted in the horizontal direction, but the opening pitch of the vapor deposition mask 2 should be set narrower than the film formation pattern in consideration of this deviation amount. Thus, it is possible to form a vapor deposition film with high film formation pattern position accuracy.

  Similarly, as shown in FIG. 13, when the opening width φx of the evaporation port 8 is larger than the mask opening width Mx, the vapor deposition mask opening width Mx is larger or smaller than the gap G between the substrate 4 and the vapor deposition mask 2 and evaporated. It becomes wide by the difference according to the size of the distance TS between the mouth portion 8 and the vapor deposition mask 2. Specifically, the mask opening width Mx is represented by (φx + αP / (1 + α)) (in this case, α = TS / G).

  For example, when the deposition pattern width P is 0.1 mm, TS is 100 mm, and φx is 1 mm, the mask opening width Mx is about 0.126 mm when G is 3 mm, and about 0.143 mm when G is 5 mm. It becomes wider than P.

  Further, in this embodiment, a rib portion 24 extending in the relative movement direction of the substrate 4 is provided, and the deposition mask 2 provided in each restriction opening 5 is supported and bonded to the front end surface of the rib portion 24 on the substrate 4 side. A mask mounting support surface 23 is provided. For example, as shown in FIG. 14, when the R pixel of the light emitting layer is vapor-deposited, other G and B pixel widths and the corresponding mask mounting support surface 23 can be provided. Since the gap G is separated, it can be secured widely. Specifically, the mask mounting support surface 23 in a configuration in which the substrate 4 and the vapor deposition mask 2 are in close contact is expressed by 2P + 3PP using the vapor deposition film interval PP and the vapor deposition pattern width P for RGB pixel vapor deposition. . Furthermore, the gap G causes a difference A between the extreme position of the vapor deposition pattern and the extreme position of the mask opening 3 of the vapor deposition mask 2 when viewed from the center of the substrate 4 facing the evaporation port 8. . A is represented by G (Px + P / 2−φx / 2) / (TS + G), and the mask mounting support surface 23 is wider by 2A than the case where the substrate 4 and the vapor deposition mask 2 are in close contact with each other.

  More specifically, for example, when the vapor deposition pattern width P is 0.1 mm and the vapor deposition film interval PP is 0.05 mm, the mask mounting support surface 23 when the substrate 4 and the vapor deposition mask 2 are in close contact is 0. 35 mm. However, in the case where the substrate 4 and the vapor deposition mask 2 are separated from each other in this embodiment, for example, if the TS is 200 mm, the φx is 1 mm, and the Px is 30 mm, the mask mounting support surface 23 has a gap G of 1 mm. When the gap G is about 0.64 mm and the gap G is about 5 mm, the thickness is about 1.79 mm, so that a sufficient area for spot welding can be secured by polymerizing the vapor deposition mask 2.

  A second embodiment of the present invention will be described with reference to the drawings.

  As shown in FIG. 15, a plurality of evaporation ports 8 are arranged in parallel for each restriction opening 5, and the evaporation rate is increased by overlapping evaporated particles from the plurality of evaporation ports 8 on the substrate 4. Can do.

  Specifically, in the case of the configuration in which three evaporation ports 8 are provided for each restriction opening 5, the evaporated particles evaporated from the central evaporation port 8 pass through the mask opening 3 and the substrate 4. Evaporated particles deposited on the substrate and evaporated from the adjacent evaporation port 8 pass through the adjacent mask opening 3 and are deposited at the same position on the substrate 4. Since a plurality of evaporation ports 8 are arranged side by side, the amount superposed on the substrate 4 increases and the deposition rate increases.

  Further, when the arrangement position accuracy of the three evaporation ports 8 arranged in the horizontal direction orthogonal to the relative movement direction of the substrate 4 is good, the vapor deposition rate is the same, but the opening of each evaporation port 8 is the same. It is good also as a structure which suppresses the shadow SH of a vapor deposition film further by making width | variety (phi) x into 1/3.

  The interval between the evaporation ports 8 for the vapor deposition film to be superimposed on the substrate 4 is determined by the following equation (5).

  (Pφx = interval of evaporation port, PMx = interval of mask opening of vapor deposition mask, G = distance between substrate and vapor deposition mask, TS = distance between vapor deposition port and vapor deposition mask)

  Specifically, when PMx is 0.5 mm, G is 4 mm, and TS is 200 mm, Pφx is 25.5 mm.

  A specific third embodiment of the present invention will be described with reference to the drawings.

  By arranging a plurality of evaporation ports 8 arranged opposite to the restriction opening 5 in the lateral direction perpendicular to the relative movement direction of the substrate 4, one evaporated particle evaporated from the plurality of evaporation ports 8 is one. Since vapor deposition can be performed on the film formation pattern at equal intervals through the mask opening 3, the number of mask openings 3 for determining the film formation pattern can be reduced and the pitch of the mask openings 3 can be widened. The width of the part can be widened, the mechanical strength of the vapor deposition mask 2 can be increased, the mask can be prevented from being destroyed or adhered during cleaning, and the mask mounting support surface 23 can be secured widely, so that the vapor deposition mask 2 and the mask holder 6 can be joined. Can be performed more firmly.

  Specifically, as shown in FIG. 16, even when there are an odd number (3) of evaporating openings 8 disposed in the restricting opening 5 in an opposed state, as shown in FIG. Even when there are an even number (2) of the evaporation port portions 8 disposed in the state of being opposed to each other in the portion 5, the distance between the mask openings 3 in the restriction opening 5 is uniform, and the film formation in the restriction opening 5 is performed. The number of mask openings 3 can be reduced to the number obtained by dividing the number of patterns by the number of evaporation ports 8.

  Further, an odd number (3) of evaporation ports 8 are disposed in the limiting opening 5 shown in FIG. 16 in an opposed state, and the number of film formation patterns in the limiting opening 5 is equal to the number of evaporation ports 8. In the configuration in which the number of mask openings 3 can be reduced to the divided number, as shown in FIG. 18, the interval between the mask openings 3 is halved and the film forming pattern interval is also halved. Therefore, a highly accurate film formation pattern can be deposited.

  Further, as shown in FIG. 19, since the number of the mask openings 3 is reduced, a medium path and a heat pipe can be arranged on the mask surface where the mask openings 3 were provided, and the temperature of the surface of the vapor deposition mask 2 is increased. As shown in FIG. 20, the temperature of the vapor deposition mask 2 is increased by increasing the surface area in contact with the vapor deposition mask 2 instead of increasing the number of media or heat pipes. You may make it hold | maintain constant. Furthermore, by providing the mask holder 6 with a temperature control mechanism, the temperature of the vapor deposition mask 2 attached to the mask holder 6 may be further maintained.

  The interval between the evaporation ports 8 for the evaporation particles evaporated from the plurality of evaporation ports 8 to pass through the same mask opening 3 and deposit at a desired film formation pitch is determined by the following equation (5). The

  (Pφx = interval of evaporation port, PMx = interval of mask opening of vapor deposition mask, G = distance between substrate and vapor deposition mask, TS = distance between vapor deposition port and vapor deposition mask)

  Specifically, if PMx is 0.5 mm, G is 4 mm, and TS is 200 mm, Pφx is 25.5 mm. If three evaporation ports 8 are provided, the mask opening pitch is tripled. PMx is 1.5 mm.

  Further, as shown in FIG. 21, since the interval between the mask openings can be increased by reducing the number of mask openings 3 for determining the film formation pattern, the film formation pattern shown in the second embodiment is applied to the substrate 4. Compared with the case of overlapping with each other or the case where one evaporation port 8 disposed in a state of being opposed to the restricting opening 5 is provided, the mask mounting support surface is blocked by the mask opening B at the end. 23 can be enlarged.

  A fourth embodiment of the present invention will be described with reference to the drawings.

  As shown in FIG. 22, a second vapor deposition mask 10 is disposed in close contact with the substrate 4 between the substrate 4 and the vapor deposition mask 2. Therefore, in this embodiment, the evaporation source 1, the mask holder 6 and the first vapor deposition mask 2 are configured to move relative to the second vapor deposition mask 10 and the substrate 4. The vapor deposition mask 2 and the substrate 4 may be arranged in a separated state. In the relative movement between the vapor deposition mask 2 and the substrate 4 attached to the evaporation source 1 and the mask holder 6, which one of the relative movements is performed. May be.

  The mask openings 11 of the second vapor deposition mask 10 are arranged to finally determine the film formation pattern, and the first vapor deposition mask 2 located on the evaporation source 1 side with respect to the second vapor deposition mask 10. The width of the mask opening 3 is set to be the same as or wider than that of the second vapor deposition mask 10. Further, the formation interval of the mask openings 11 of the second vapor deposition mask 10 in the restriction opening 5 is formed wider than the formation interval of the mask openings 3 of the first vapor deposition mask 2.

  In this embodiment, the second deposition mask 10 is disposed in close contact with the substrate 4 so that the shadow SH due to the first deposition mask 2 does not occur. The radiation heat from the evaporation source 1 and the amount of heat conducted by the evaporated particles are absorbed by the first vapor deposition mask 2 and the radiant heat emitted from the first vapor deposition mask 2 propagates to the second vapor deposition mask 10. The amount of heat incident on the second vapor deposition mask 10 is greatly reduced, and the thermal expansion of the second vapor deposition mask 10 can be suppressed.

  Furthermore, you may comprise so that the temperature of the 1st vapor deposition mask 2 may not rise further by providing the cooling mechanism in the mask holder 6. FIG.

  Therefore, in the present embodiment, the first vapor deposition mask 2 prevents the heat from the evaporation source 1 from propagating to the second vapor deposition mask 10 and prevents the vapor deposition pattern incident on the second mask opening 11 from shifting. The mask opening 3 is formed by etching. Since the second vapor deposition mask 10 is provided with the first vapor deposition mask 2 so that the incidence of heat is greatly suppressed, even if it is formed of nickel or the like having a large linear expansion coefficient, the second vapor deposition mask 10 does not thermally expand. As a result, a vapor deposition film having a film formation pattern finally determined is formed, so that an electroforming method capable of forming the mask opening 11 with high accuracy can be used.

  Further, as shown in FIG. 23, a plurality of evaporation ports 8 are arranged in parallel for each restriction opening 5, and the evaporation particles from the plurality of evaporation ports 8 are overlapped on the substrate 4 to increase the deposition rate. In the configuration that can be performed, the gap G between the substrate 4 and the evaporation mask 2, the distance TS between the evaporation port 8 and the evaporation mask 2, the substrate, due to the manufacturing and mounting accuracy, thermal expansion during heating of the evaporation source 1, and the like. 4, the evaporation particles from the plurality of evaporation ports 8 cannot be accurately superimposed on the substrate 4, and the film formation pattern spreads. However, since the film formation pattern of the second mask opening 11 is formed by arranging the second vapor deposition mask 10 in close contact with the substrate 4, a vapor deposition apparatus that can tolerate the above-described positional deviation. Become.

  In addition, this invention is not restricted to Examples 1-4, The concrete structure of each component can be designed suitably.

φx Aperture width G Gap MPx Formation pitch Mx Aperture dimension P Deposition width PP Evaporation film distance SH Shadow TS Distance 1 Evaporation source 2 Deposition mask 3 Mask opening 4 Substrate 5 Restriction opening 6 Mask holder 7 Deposition chamber 8 Evaporation Mouth
10 Second deposition mask
11 Second mask opening
16 Exchange room
17 Material recovery mechanism
19 Thermal block
23 Mask mounting bearing surface
24 Ribs
26 Evaporating particle generator
27 Horizontal diffuser
28 Protrusion for forming the evaporation port
29 Film thickness correction plate

Claims (32)

  The film forming material evaporated from the evaporation source is deposited on the substrate through the mask opening of the vapor deposition mask, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask is formed on the substrate. In the vapor deposition apparatus, a limiting opening is provided between the evaporation source and the substrate disposed opposite to the evaporation source to limit a scattering direction of evaporated particles of the film forming material evaporated from the evaporation source. A mask holder having a scattering restricting portion, and attaching the vapor deposition mask arranged in a separated state with the substrate to the mask holder, and attaching the substrate to the mask holder provided with the vapor deposition mask; The evaporation source is configured to be relatively movable while maintaining a state separated from the vapor deposition mask, and the evaporation port of the evaporation source has a width in a lateral direction that is long in the relative movement direction of the substrate and orthogonal thereto. Vapor deposition apparatus is characterized in that a slit-shaped are.   The evaporation source provided with the evaporation source containing the film forming material and the mask opening through which the evaporated particles of the film forming material evaporated from the evaporation port portion of the evaporation source pass in an evaporation chamber having a reduced pressure atmosphere A plurality of the evaporation port portions are arranged side by side, and the evaporation particles scattered from the plurality of evaporation port portions pass through the mask opening portions on the substrate that is aligned with the vapor deposition mask in a separated state. A vapor deposition film having a film formation pattern defined by a vapor deposition mask is formed on the substrate, and is adjacent to the evaporation source and the substrate disposed opposite to the evaporation source. Alternatively, the mask holder that constitutes the scattering restricting portion provided with the restricting opening that does not allow evaporation particles from the evaporation port portion at a distant position to pass therethrough is disposed, and the mask holder is arranged in a state of being separated from the substrate. Set up The deposition mask is attached, and the substrate is moved relative to the mask holder and the evaporation source attached with the deposition mask while maintaining a separated state from the deposition mask, and the deposition is performed in the relative movement direction. The vapor deposition apparatus according to claim 1, wherein the vapor deposition film of the film formation pattern of the mask is made continuous so that the vapor deposition film is formed in a wide range even with the vapor deposition mask smaller than the substrate.   A plurality of the evaporation ports of the evaporation source are arranged side by side in a transverse direction orthogonal to the relative movement direction of the substrate, and the restriction opening of the scattering restriction provided in the mask holder is along the transverse direction. The vaporized particles evaporating from the respective evaporation port portions pass only through the limiting opening portion facing each other and further pass through the mask opening portion of the vapor deposition mask facing the limiting opening portion. A vapor deposition film of the film formation pattern is formed on the substrate, and the evaporation particles from the evaporation port at adjacent or separated positions are attached and trapped so that the evaporation particles are scattered by the restriction opening. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured to be limited.   The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask is attached to an end of the mask holder on the substrate side.   The vapor deposition apparatus according to claim 4, wherein a tension is applied to the vapor deposition mask at an end of the mask holder on the substrate side.   The vapor deposition apparatus according to claim 5, wherein the mask holder stretches the vapor deposition mask by applying a tension in a relative movement direction of the substrate.   The vapor deposition mask is divided into a plurality of pieces in a lateral direction perpendicular to the relative movement direction of the substrate, and the divided vapor deposition masks are attached to the mask holder in a juxtaposed state in the lateral direction. The vapor deposition apparatus of any one of Claims 1-6.   A plurality of the evaporation port portions of the evaporation source are arranged in parallel in a lateral direction orthogonal to the relative movement direction of the substrate, and the scattering opening in which the restriction opening portion is provided in an opposing state for each of the one or a plurality of evaporation port portions. 8. The method according to claim 4, wherein the vapor deposition mask is attached to an end portion of the mask holder on the substrate side so as to cover each restriction opening of the mask holder having a restriction portion. The vapor deposition apparatus of description.   The mask holder extends in the relative movement direction of the substrate, and prevents the mask holder from being deformed by tension applied to the vapor deposition mask when the vapor deposition mask is stretched on the mask holder. The vapor deposition apparatus according to any one of claims 1 to 8, wherein a rib portion for improving the rigidity of the mask holder is provided between the restricting openings.   A mask that supports and joins the vapor deposition mask provided in each of the restriction openings on the substrate-side front end surface of the rib portion extending in the relative movement direction of the substrate between the restriction openings of the mask holder. The vapor deposition apparatus according to any one of claims 1 to 9, wherein an attachment support surface is provided.   The said mask holder formed the shape of the said opening for a restriction | limiting in the shape where the opening area by the side of the said evaporation source is smaller than the opening area by the side of the said board | substrate. The vapor deposition apparatus of description. When the substrate and the vapor deposition mask are vapor-deposited in a separated state, and the vapor deposition film of the film formation pattern is formed on the substrate by the vapor deposition mask, the shadow SH which is a side edge inclined portion of the vapor deposition film is When the gap with the vapor deposition mask is G, the lateral opening width of the evaporation port portion is φx, and the distance between the evaporation port portion and the vapor deposition mask is TS, it is expressed by the following formula (1). The gap G is set to be large and the opening width φx of the evaporation port is set to be small so that SH does not reach the interval PP between adjacent vapor deposition films. The vapor deposition apparatus of any one of these.

  The evaporation source includes an evaporation particle generation unit that heats the evaporation material, a horizontally long diffusion unit that diffuses the evaporation particles generated from the evaporation particle generation unit to equalize pressure, and a relative position of the substrate to the horizontally long diffusion unit. A plurality of the evaporation ports arranged in parallel in a lateral direction orthogonal to the moving direction, wherein one or a plurality of the evaporation sources are arranged in parallel in the horizontal direction orthogonal to the relative moving direction of the substrate. The vapor deposition apparatus of any one of claim | item 1 -12.   14. The heat blocking part for blocking heat of the evaporation source is disposed around at least one of the periphery of the horizontally long diffusion part and the periphery of the evaporation port part. Vapor deposition equipment.   15. The introduction part for disperse the evaporated particles diffused in the horizontally long diffusion part with directivity when ejected from the evaporation port part is provided in the horizontally long diffusion part. The vapor deposition apparatus of any one of these.   The plurality of evaporation port portions are provided on the front end surface of the introduction portion on the substrate side, and the introduction length of the introduction portion toward the substrate side is the introduction portion in the lateral direction orthogonal to the relative movement direction of the substrate. The vapor deposition apparatus according to claim 15, wherein the vapor deposition apparatus is configured to be longer than the width of the film.   The vapor deposition apparatus according to any one of claims 15 and 16, wherein the introduction portion is disposed so as to protrude from the laterally long diffusion portion toward the substrate side.   A plurality of the mask openings of the vapor deposition mask are arranged in parallel in a lateral direction orthogonal to the relative movement direction of the substrate, and each mask opening is formed or formed in a slit shape long in the relative movement direction. A plurality of the above-mentioned are arranged side by side in the relative movement direction, and the total opening length in the relative movement direction is set so as to become longer as the distance in the lateral direction is longer than the central part of the restriction opening. Item 18. The vapor deposition device according to any one of Items 1 to 17.   19. The film thickness correction plate for closing a part of the mask opening and setting the opening range of each mask opening is disposed on the substrate side of the vapor deposition mask. The vapor deposition apparatus of Claim 1. The formation interval Mpx in the lateral direction perpendicular to the relative movement direction of the substrate of the mask of the vapor deposition mask that determines the film formation pattern deposited on the substrate is G, and the gap between the substrate and the vapor deposition mask is G. When the distance between the mask and the evaporation port portion is TS and the formation interval in the lateral direction perpendicular to the relative movement direction of the substrate of the film formation pattern is Px, the film formation pattern formation interval Px is expressed by the following equation (2). The opening size Mx in the lateral direction orthogonal to the relative movement direction of the substrate of the deposition mask is set to be narrower, the gap between the substrate and the deposition mask is G, and the deposition mask and the evaporation port portion. The distance between and TS is represented by TS, and the film formation width in the film formation pattern of the vapor deposition film is represented by the following formula (3). Deposition apparatus according to any one of claims 1 to 19 to symptoms.

  The vapor deposition apparatus according to any one of claims 1 to 20, further comprising an exchange chamber in which the mask holder provided with the vapor deposition mask is reciprocally movable with the vapor deposition chamber.   The cleaning chamber according to any one of claims 1 to 21, further comprising a cleaning mechanism for cleaning a film deposition material attached to at least one of the mask holder or the vapor deposition mask attached to the mask holder in the exchange chamber. The vapor deposition apparatus of description.   The material exchange mechanism which collects the film-forming material adhering to at least one of the above-mentioned mask holder or the above-mentioned vapor deposition mask attached to the mask holder is provided in the above-mentioned exchange room. The vapor deposition apparatus of description.   A plurality of the evaporation port portions of the evaporation source arranged in a state of being opposed to the opening for restriction are arranged in parallel in a lateral direction perpendicular to the relative movement direction of the substrate, and the interval between the evaporation port portions arranged in parallel is set, By setting the gap G between the substrate and the deposition mask, the distance TS between the evaporation port and the deposition mask, and the distance between the mask openings of the deposition mask, the mask opening is passed. The evaporated particles evaporated from the evaporation port portion and the evaporated particles evaporated from the adjacent evaporation port portion that passed through the adjacent mask opening are configured to overlap on the substrate. Item 24. The vapor deposition apparatus according to any one of Items 1 to 23.   A plurality of the evaporation port portions of the evaporation source arranged in a state of being opposed to the opening for restriction are arranged in parallel in a lateral direction perpendicular to the relative movement direction of the substrate, and the interval between the evaporation port portions arranged in parallel is set, By setting the gap G between the substrate and the vapor deposition mask, the distance TS between the evaporation port portion and the vapor deposition mask, and the distance between the mask openings of the vapor deposition mask, the substrate in the restriction opening portion is set. The lateral mask openings perpendicular to the relative movement direction of the substrate are transverse directions perpendicular to the relative movement direction of the substrate in accordance with the number of the evaporation port portions arranged opposite to the same restriction opening. The vapor deposition apparatus according to any one of claims 1 to 24, wherein the vapor deposition apparatus is configured at equal intervals less than the number of film formation patterns.   The vapor deposition mask attached to the mask holder is used as a first vapor deposition mask, and a second vapor deposition mask is disposed between the substrate and the first vapor deposition mask. 26. The vapor deposition apparatus according to any one of 25.   The number of mask openings of the second vapor deposition mask in the lateral direction orthogonal to the relative movement direction of the substrate disposed in the restriction opening is the same on the evaporation source side than the second vapor deposition mask. The number of the mask openings of the first vapor deposition mask in the lateral direction orthogonal to the relative movement direction of the substrate disposed in the restriction opening, the mask openings of the respective vapor deposition masks, Different formation intervals corresponding to the difference in distance from the substrate, and the mask opening width of the mask opening of the second vapor deposition mask is set to be the same or narrower than that of the first vapor deposition mask. 27. The vapor deposition apparatus according to claim 26, characterized in that:   The said 2nd vapor deposition mask was formed from the material whose linear expansion coefficient is larger than the said 1st said vapor deposition mask located in the said evaporation source side from this. The vapor deposition apparatus of description.   29. The vapor deposition apparatus according to any one of claims 26 to 28, wherein the second vapor deposition mask is formed by electroforming.   The number of the mask openings of the second vapor deposition mask in the lateral direction perpendicular to the relative movement direction of the substrate disposed in the restriction opening is the same as the number of the mask openings disposed in the restriction opening. More than the number of mask openings of the first vapor deposition mask in the lateral direction perpendicular to the relative movement direction of the substrate, the number of the openings formed in accordance with the number of the evaporation openings disposed in the same restriction opening. The vapor deposition apparatus of any one of Claims 26-29 characterized by these.   The vapor deposition apparatus according to claim 1, wherein the film forming material is an organic material.   32. A vapor deposition method, wherein a vapor deposition film having a film formation pattern defined by the vapor deposition mask is formed on the substrate using the vapor deposition apparatus according to any one of claims 1 to 31.

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