JP2018127663A - Vapor deposition device and vapor deposition source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique for effectively improving material efficiency in a vapor deposition device having a substrate for performing at least one of revolution and rotation, and a vapor deposition source.SOLUTION: A vapor deposition device has a support member 104 supporting a substrate 103, and a vapor deposition source 101, and the support member 104 may perform at least one of revolution and rotation of the substrate, and change an angle or arrangement of a substrate to a face of an opening 203 of the vapor deposition source 101. The vapor deposition source 101 housing a vapor deposition material has an opening 203 through which vapor of the vapor deposition material passes, and the opening has such a shape that plural slit-like openings 400 cross with each other at inner ends, and has walls 401, 402 along one part of an edge of the opening.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a deposition apparatus such as a vacuum deposition apparatus, and a deposition source thereof.

  In general, a vacuum deposition apparatus is an apparatus that evaporates a deposition material by a heating mechanism of a deposition source in a vacuum environment formed by pump exhaust, and deposits a substrate to be deposited. For example, a small substrate such as an optical element of a digital camera is aligned in the revolving radius direction of a dome-shaped substrate holder, and vapor deposition is performed while the substrate holder is revolving. Further, a panel-like substrate having a large scintillator is deposited while being inclined and tilted with respect to the opening surface of the deposition source. The space formed by the trajectory due to the revolution of the substrate arranged in the dome-shaped substrate holder or the self-revolution of the inclined substrate becomes a space having a certain thickness from the conical surface (in this specification, This space is also called a dome-shaped space). At present, the vapor of the vapor deposition material is expanded so as to deposit a uniform amount on each position of the substrate in order to reduce the film thickness distribution of the substrate that revolves or revolves within the dome-shaped space. Therefore, the material yield, which is the ratio of the vapor deposition material deposited on the substrate, is extremely low, and the mass production cost of the product composed of the vapor deposition film and the substrate remains high. For such a problem, for example, a mask in which a plurality of slits are radially arranged is installed between a deposition source and a plurality of substrates arranged circumferentially thereon, and the mask The vapor that has passed through each slit is caused to exist in a dome-shaped space formed by each substrate by revolution. And the apparatus and the film-forming method which make a material yield high by increasing the number of the board | substrates vapor-deposited simultaneously are disclosed by patent document 1. FIG.

Japanese Patent No. 4835826

  However, in vapor deposition through a mask in which slits are arranged, most of the vapor may not pass through the slit and vaporize the mask. In such a technical situation, increasing the number of substrates to be co-deposited is unlikely to be a fundamental solution to the problem of increasing material yield.

  In view of the above problems, a vapor deposition source according to an aspect of the present invention is a vapor deposition source that is used in a vapor deposition apparatus and contains a vapor deposition material, and has an opening through which vapor of the vapor deposition material passes. The slit-shaped opening has a shape that intersects at the inner end, and has a wall along a part of the edge of the opening.

  In view of the above problems, a vapor deposition apparatus according to another aspect of the present invention is a vapor deposition apparatus that includes a support member that supports a substrate and the vapor deposition source, and the support member rotates and rotates the substrate. The angle or arrangement of the substrate with respect to the surface of the opening of the vapor deposition source can be changed.

  According to the present invention, the material yield of the vapor deposition material can be effectively increased.

The figure which shows the structure of the vacuum evaporation system which concerns on one Embodiment of this invention. The figure which shows the structure of the vapor deposition source which concerns on one Embodiment of this invention. The figure which shows the structure of the vacuum evaporation system which evaluates the shape of a vapor | steam. The figure which shows the structure of the opening of the vapor deposition source which concerns on one Embodiment of this invention. The figure which shows the bending angle of the vapor | steam with respect to the structure of the opening of a vapor deposition source. The figure which shows the width | variety of the wall in opening of the vapor deposition source which concerns on one Embodiment of this invention. The figure which shows the shape and dimension in the structure of the opening of a vapor deposition source. The figure of the result of having simulated the bending of steam. The figure of the same simulation result. The figure of the experimental result of the film thickness distribution illustrated on the equal film thickness line which evaluates the bending of steam.

  In the present invention, the number, shape, intersecting angle, symmetry, etc. of the intersecting slit-shaped openings, the position of the wall, the height, etc. are determined by self-deposition by vapor particles to be described later in order to realize the required vapor shape of the vapor deposition material. It is possible to design appropriately based on the concept of organization and the result of numerical simulation. Typically, as shown in the embodiments and examples to be described later, an opening formed by joining three slit-like openings of the vapor deposition source at each inner end is formed in a Y shape. Preferably, at least a part of the periphery of the Y-shaped opening is provided with a wall along the edge of the opening. A wall is attached perpendicularly | vertically with respect to the surface (opening surface) prescribed | regulated by Y-shaped opening, for example. And in a vacuum evaporation apparatus provided with a vapor deposition source, the longitudinal direction of the linear slit of the I part in a Y-shaped opening part is made to correspond with the direction of the revolution radius of a board | substrate. Furthermore, the two linear slits of the V part in the Y-shaped opening are arranged outside the I part in the revolution radius direction.

[Configuration of vacuum evaporation system and evaporation source]
The structure of the vacuum evaporation apparatus which is one Embodiment of this invention is demonstrated using FIG. As shown in FIG. 1, in a vacuum chamber 100, a deposition source 101, a substrate heater 102, a vacuum pump 104, a jig 105 that is a support member that supports and revolves a substrate 103 to be deposited, and a substrate 103 after deposition. A cooling plate 106 is provided for cooling. With respect to the vacuum chamber 100, each part is arranged as shown in FIG.

The ultimate pressure in the vacuum chamber 100 can be reduced to 1 × 10 ⁻³ Pa or less by the vacuum chamber 100 and the vacuum pump 104. In addition, when an inert gas such as N ₂ or Ar can flow into the vacuum chamber 100 and the flow rate of the inert gas is controlled by a mass flow controller (not shown), the pressure in the vacuum chamber 100 can be made constant. good.

  The configuration of the vapor deposition source 101 will be described with reference to FIG. In the figure, a crucible 200 is a cylindrical container for introducing a vapor deposition material. The vapor deposition material is usually accommodated on the inner bottom surface of a cylindrical container. The crucible 200 may have a small inner diameter with respect to the height. As a result, a uniform evaporation surface is obtained in the radial direction, and the vapor flowing into the vacuum environment during vapor deposition becomes a steady flow. Further, the vapor deposition material charged into the crucible 200 is heated by the heater 201. The heater 201 may be capable of heating and controlling the upper and lower parts of the crucible 200 independently. Thereby, it is possible to ensure redundancy (prevention of temperature decrease) with respect to the upper part of the crucible 200 and the opening 203 described later, which are likely to be clogged by deposition of the vapor deposition material. If several layers of reflectors 202 that reflect the heat radiation from the heater 201 are provided around the heater 201, the input power to the heater 201 may be suppressed.

  Further, the temperature of the crucible 200 is controlled by providing control points on the heater 201 and the reflector 202. For example, the tip of the thermocouple is brought into contact with the control point. It is preferable to weld the tip of the thermocouple at a control point because the temperature reproducibility of the crucible 200 can be improved. However, if the correlation between the temperature of the space between the crucible 200 and the heater 201 and the temperature of the crucible 200 is accurately grasped, even if the space is used as a control point and the tip of the thermocouple is not contacted, good.

  The crucible 200 is covered with a lid 204 provided with an opening 203. The configuration of the opening 203 will be described later in [Configuration of the opening]. The temperature of the opening 203 is set to be equal to or higher than the melting point of the vapor deposition material by heating the heater 201. Then, clogging due to deposition of the vapor deposition material does not occur in the opening 203. Further, a weight 205 to the lid 204 is installed on the edge of the lid 204. This is to prevent the lid 204 from being removed by the vapor pressure of the vapor deposition material charged into the crucible 200 due to the vapor pressure of the material. The weight 205 is preferably made of a ceramic having low thermal conductivity and thermal emissivity and having a heat resistance temperature higher than the heating temperature of the vapor deposition material put into the crucible 200. The reason why the thermal conductivity of the weight 205 is lowered is that the heat flow due to the heat conduction from the surface in contact with the crucible 200 in the weight 205 to the surface on the substrate 103 side is reduced, and the surface on the substrate 103 side of the weight 205 is lowered. This is because it can. In addition, by reducing the thermal emissivity of the weight 205, the heat flow due to the thermal radiation from the surface of the weight 205 to the substrate 103 can be reduced. As a result, the weight 205 makes it difficult for the substrate 103 to reach a high temperature, so that the temperature of the substrate 103 can be easily controlled by the input power of the substrate heater 102.

  As shown in FIG. 1, the vapor deposition source 101 is installed so as to be shifted from the revolution shaft 105 a so that the center of the opening 203 comes to a location that substantially coincides with the revolution radius of the jig 105 that revolves the substrate 103. Here, the revolution radius is a distance perpendicular to the revolution axis 105a from the center of the substrate 103 (which is also the center of rotation of the base plate to which the substrate 103 of the jig 105 is attached). This revolution radius and the distance parallel to the revolution axis 105 a from the opening 203 of the vapor deposition source 101 to the center of the substrate 103 are within the dome-like space where the vapor generated by the opening 203 is formed by the revolution trajectory of the substrate 103. Decide to fit. Further, as shown in FIG. 2, a shutter 206 capable of shielding the vapor is provided on the opening 203 of the vapor deposition source 101 so that the vapor of the vapor deposition material reaching the melting point can be blown to the substrate 103 at a desired timing.

  Although omitted in the configuration shown in FIG. 1 because the illustration is complicated, a film thickness sensor is provided around the vapor deposition source 101 in an actual apparatus. It is preferable that the input power of the heater 201 for heating the vapor deposition material in the crucible 200 can be controlled by a film thickness controller (not shown) so that the film thickness rate measured by the film thickness sensor is constant.

  The substrate heater 102 heats the substrate 103 by a heat flow of heat radiation. A method for measuring the temperature of the substrate 103 will be described later together with the description of the jig 105. The input power to the substrate heater 102 can be controlled from the temperature of the substrate 103.

  As shown in FIG. 1, the jig 105 for rotating and revolving the substrate 103 is attached to a position separated from the revolution axis 105a by tilting the substrate 103 with respect to the opening surface of the vapor deposition source 101. ing. Further, it is preferable that the inclined end of the substrate 103 does not reach the revolution axis 105a. Thereby, the self-revolving substrate 103 can be faced and added, and each substrate can be vapor-deposited simultaneously. In the present embodiment, the substrate 103 attached to the jig 105 is, for example, a square or rectangular thin plate, and the size is 500 mm or less on one side and the thickness is 0.7 mm or less. In addition, regarding the rotation of the substrate 103, the rotation speed can be set to a maximum of 58 rpm and the rotation speed can be set to a maximum of 20 rpm. The jig that is the support member may be capable of rotating or revolving the substrate and changing the angle or posture of the substrate with respect to the surface of the opening of the vapor deposition source.

As shown in FIG. 3A, the jig 105 can be provided with a square or rectangular thin substrate 301 parallel to the surface of the opening 300 of the vapor deposition source. The substrate 301 can be installed up to the same size as the substrate 103 described above. Here, the substrate 301 is revolved around the revolution axis 302. L ₁ described in FIG. 3A is a distance parallel to the revolution axis 302 between the opening 300 of the evaporation source and the center of the substrate 301. FIG. 3B illustrates the substrate 301 viewed from directly above. L ₃ that is described in FIG. 3 (B) is the direction of the radius of revolution of the substrate 103, L ₂ is a direction at right angles to the direction of the radius of revolution. 3 in FIG. 3B will be described later in [Example 2].

  Returning to the description of FIG. 1, in the jig 105 for rotating and revolving the substrate 103, the base plate to which the substrate 103 is attached has a rigidity enough to suppress deformation due to the attachment of the substrate 103 to an allowable value or less, and a hole is made. It is desirable to reduce the mass. Thereby, since the heat capacity of the base plate is reduced, the rate of the temperature of the substrate 103 is reduced by the temperature of the base plate. Then, the desired temperature of the substrate 103 can be realized in a short time using the substrate heater 102. It is desirable that the temperature of the substrate 103 can be measured by a thermocouple brought into contact with the substrate 103. Alternatively, the temperature of the substrate 103 may be measured from the temperature correlation between the back surface and the substrate 103 by bringing the tip of the thermocouple close to several millimeters toward the back surface of the base plate that rotates with the substrate 103. Further, if it is difficult to provide such a thermocouple, the following may be performed. In other words, a thermo label is attached to the substrate 103, and when the substrate heater 102 is heated by the substrate heater 102, the temperature of the thermo label is visually confirmed, and the input power to the substrate heater 102 and the heating necessary to bring the substrate 103 to a desired temperature. Make a preliminary study to understand the time. The substrate 103 can be brought to a substantially desired temperature every time based on the input power to the substrate heater 102 and the heating time for the substrate 103, which are grasped from this examination.

  The cooling plate 106 shown in FIG. 1 cools the substrate 103 by absorbing the latent heat caused by deposition and the heat flow caused by the heat radiation from the substrate 103 that has become high temperature due to the heat flow caused by the substrate heater 102. . The cooling plate 106 is installed in the vacuum chamber 100 so as to cover the inner wall of the vacuum chamber 100 above the lower end of the substrate 103. The cooling plate 106 is always water-cooled so that the temperature difference with the substrate 103 during vapor deposition becomes large. Furthermore, the surface of the cooling plate 106 is preferably made of a material having a high thermal emissivity and having corrosion resistance to the vapor deposition material. If the outer wall surface of the vacuum chamber 100 is water-cooled so that the surface temperature and thermal emissivity of the inner wall can be made substantially the same as those of the cooling plate 106, the cooling plate 106 need not be provided. This may lead to cost reduction of the vacuum deposition apparatus.

[Configuration of aperture]
The structure of the opening part 203 in this embodiment is demonstrated using FIG. As shown in FIG. 4, the opening 203 is a Y opening 400 obtained by combining three slit-like openings, and walls 401 and 402 are provided along a part of the edge of the Y opening 400. Each will be described in detail below.

  The Y opening 400 is a combination of rectangular slits. The flow form of the steam passing through the Y opening 400 is preferably an intermediate flow or a continuous flow. In such a flow form, the vapor passing through each slit constituting the Y opening 400 has extremely high density of particles constituting the vapor (hereinafter also simply referred to as vapor particles). Thereby, it frequently collides and scatters between the vapor particles immediately after passing through each slit. In the present invention including this embodiment, the vapor is scattered on a plane parallel to the plane having the Y opening 400 by using the collision and scattering of the vapor particles and the restriction of the scattering direction of the vapor particles by the walls 401 and 402. Bend.

The bent vapor can keep its shape and reach the substrate 103. This is because the pressure in the vacuum chamber 100 is 1 × 10 ⁻³ Pa or less, and the mean free path of the vapor particles becomes extremely long. This mean free path is the distance traveled before the vapor particles collide. Therefore, when the mean free path is extremely long, collisions between vapor particles that change the shape of the steam are greatly reduced, so that the shape can be maintained.

  The determination of the flow form passing through the Y opening 400 may be performed using the Knudsen number. The Knudsen number is a value obtained by dividing the mean free path of vapor particles by the representative length. Here, A.I. Similar to Guthrie et al., If this value is less than 0.01, the flow form is determined as a continuous flow, a flow greater than 10, a molecular flow, and a flow greater than 0.01 and less than 0.1 is determined as an intermediate flow (A See Gurtrie, et al., Vacuum Equipment and Techniques, McGraw-Hill (1949)). The intermediate flow is a flow having behaviors of both a continuous flow and a molecular flow.

  The mean free path of the vapor particles for obtaining the Knudsen number is calculated using the vapor pressure when the inside of the crucible 200 during vapor deposition is considered saturated with the vapor pressure of the vapor deposition material as described above. Can do. The calculation method of the mean free path from the pressure is described in a rare gas-related commentary (for example, the Japan Society of Mechanical Engineers, Atom / Molecular Flow, Kyoritsu Shuppan (1996)). On the other hand, the representative length may be given by the short dimension of the slit forming the Y opening 400, in which the Knudsen number is likely to increase in the configuration of the present embodiment. If the representative length given by the short dimension is determined to be a continuous flow or an intermediate flow, the entire steam passing through the Y opening 400 may be determined to be in such a flow form.

  Based on such a determination method, the dimension of the slit constituting the Y opening 400 is determined so as to be a continuous flow or an intermediate flow in consideration of the mean free path of vapor particles calculated from the vapor pressure of the vapor deposition material. . Note that the Y opening 400 in FIG. 4 is combined so that the short and long dimensions of the three slits constituting the Y opening 400 are equal for each slit, but the Y opening is not limited to this combination. For example, the short dimension of the slit of the upper half of the Y opening 400 (V part in the Y opening) may be made larger than the short dimension of the lower half (I part of the Y opening). However, it is necessary or preferable that the short and long dimensions of the two slits in the upper half of the Y opening 400 are aligned with each other. If it does so, the vapor | steam when seeing Y opening 400 surface from right above can be made symmetrical. On the other hand, if it is not symmetrical, there is a possibility that it is difficult to store the vapor in the dome-shaped space where the substrate 103 is revolving. Furthermore, steam that is not symmetrical is less likely to follow the circumference due to the revolution radius. However, these can be avoided if left-right symmetry. A symmetric steam can be realized by a symmetrical opening with a center line in between. However, this does not exclude asymmetrical objects. As described above, the shape of the opening may be variously designed according to the required shape of the steam. That is, the width, length, shape, shape of intersection point, thickness, intersection angle, wall formation point, height, angle with respect to the opening surface, surface roughness of each part, etc. Can be designed.

  In addition, the thickness of the slit constituting the Y opening 400 is preferably less than the mean free path calculated from the vapor pressure in the crucible 200 during vapor deposition. If the thickness is equal to or greater than the mean free path, the flow velocity increases in a direction perpendicular to the surface of the Y opening 400, and collision and scattering between vapor particles that have passed through each slit are reduced. This creates the possibility that the steam will not bend properly. However, this may be less likely to occur if the slit thickness is less than the above mean free path.

  4, on the surface of the Y opening 400, the walls 401 and 402 shown in FIG. 4 are located on the upper side (outside in the revolving radial direction) of the upper half of the two slits (the V portion in the Y opening) and the lower half of the slit. It is attached to the lower side (inside of the revolution radius direction) of the slit (I portion in the Y opening). The angles of the walls 401 and 402 with respect to the surface of the Y opening 400 are preferably 90 °. However, the angle is not limited. For example, the walls 401 and 402 may be inclined toward the outside of the Y opening 400. However, when the walls 401 and 402 are inclined to the inside of the Y opening 400, it is desirable that the walls 401 and 402 are not greatly inclined to the inside. When the walls 401 and 402 are greatly inclined inward, steam stagnation (a space in which the velocity of the vapor particles is approximately 0 (zero)) is generated at the base portion of each of the walls 401 and 402. When collision and scattering between vapor particles in the stagnation and the main flow passing through the three slits of the Y opening 400 become more dominant than collision and scattering between the three slits, the vapor flow shown in FIG. There is a possibility that the “formed angle” 504 that becomes the turning angle becomes small. Considering this, using the numerical simulation based on the dilute gas dynamics described in detail in [Example 1], the angle formed by the walls 401 and 402 with respect to the surface of the Y opening 400 is not reduced. It is desirable to calculate the range.

  Further, as a matter of course, it is desirable to make the surface roughness of the surfaces 401 and 402 of the slit edge shown in FIG. 4 as small as possible. If the surface roughness is too large, the collision and scattering between the vapor particles constituting the surface boundary layer and the main stream of the walls 401 and 402 are more dominant than the collision and scattering between the three slits. As a result, there is a possibility that the “angle formed” 504, which is an angle at which steam is bent, shown in FIG. However, this can be avoided if the surface roughness of the walls 401 and 402 is small.

  In addition, at the angle 504 related to the angle formed by the two slits 500 in the upper half and the slit 501 in the lower half, walls 502 and 503, and the slit 500 and the slit 501 shown in FIG. The steam seen from directly above is as follows. That is, due to the collision and scattering between the particles and the restriction of the scattering direction by the walls 502 and 503, the linear θ direction indicated by the “angle formed” 504 starting from the intersection of the three slits (the direction of the arrow) ) Wide and narrow in the direction perpendicular to the straight line. And it flows in the perpendicular direction of the said same plane. That is, when the Y opening surface is viewed from directly above, the steam bends symmetrically to the left and lower right in FIG. 5 from the intersection of the three slits, and is perpendicular to the Y opening surface. Flow in the direction.

  The dimensions of each part of the walls 502 and 503 are also preferably determined so that the vapor of the vapor deposition material becomes a continuous flow or an intermediate flow in consideration of the mean free path of vapor particles calculated from the vapor pressure of the vapor deposition material.

  In the present embodiment, the vapor bent in a symmetrical “he” shape substantially matches the circumference of the revolution radius when reaching the substrate 103. Further, the distance parallel to the revolution axis 105a from the opening 203 of the vapor deposition source 101 to the center of the substrate 103 is adjusted so that the vapor is contained in the dome-shaped space where the substrate 103 is revolving. This adjustment is efficient and desirable based on a numerical simulation based on the rare gas dynamics described later in [Example 1].

  Also, it is desirable that both ends of the wall 502 attached to the upper side of the two upper half slits 500 shown in FIG. For example, as shown in FIG. 6A, the wall width 600 at both ends may be larger than the short width 601 of the slit. However, if the width 600 of the walls at both ends is made excessively longer than the width 601 of the short side of the slit, collision and scattering with vapor particles in the surface boundary layer of the walls at both ends will cause collision between the three slits. There is a fear of becoming more dominant than scattering. As a result, the “angle formed” θ504, which is the angle at which the steam bends, shown in FIG. 5 is reduced. Thus, it is desirable to avoid the above-mentioned “angle” 504 from becoming small due to the walls at both ends. For this purpose, it is desirable to calculate the range of the wall width 600 in which the above-mentioned “formed angle” 504 is not reduced by using a numerical simulation based on the rare gas dynamics described in detail in [Example 1].

  On the other hand, it is desirable that the width of the wall 503 attached to the lower side of the lower half slit 501 shown in FIG. For example, as shown in FIG. 6B, the width 602 of the wall corresponding to the wall 503 is preferably larger than the short width 603 of the lower half slit described above. However, it is desirable not to block the steam bent at the “angle” θ by the wall width 602. That is, it is desirable that the wall width 602 is not long to the vicinity of the straight line 604 having the “angle” θ.

  According to the present embodiment, for example, for a substrate that revolves or revolves in a dome-shaped space, a steam shape that substantially fits in the dome-shaped space is achieved along the circumference of the revolving radius. The material yield can be increased effectively. In particular, with respect to a substrate that is revolving, the effect of making the film thickness on the substrate uniform due to the revolution is generated in substantially the entire circumference of the circle due to the revolution radius, so the film thickness distribution can be reduced.

[Example]
In the above-described vacuum vapor deposition apparatus, the present inventor, for a certain substrate for a scintillator, tilts the angle, the revolution radius and rotation speed of the substrate, the arrangement of the vapor deposition source with respect to such a substrate, and the opening surface thereof. The bending angle of the steam represented by “the angle formed” 504 on the plane parallel to the surface was examined. As a result, it has been found that when the bending angle described above is 63 °, the material yield can be increased and the film thickness distribution can be reduced with respect to a certain substrate that revolves with the jig 105. Therefore, in the examples, the above-described steam bending angle was targeted.

Hereinafter, the present invention will be described more specifically with reference to examples.
[Example 1]
In this example, the vapor bending angle by the Y opening 400 surface of the vapor deposition source was verified by numerical simulation based on lean gas dynamics. In the numerical simulation, the Y opening 400, the walls 401 and 402, and the crucible 200 in which the three slits shown in FIG. The shape and dimensions of the Y opening 400 at that time are shown in FIG. 7 (unit: mm). As shown in the figure, the “angle formed” by the slit (corresponding to the above “angle formed” 504) was set to 63 °. The inner diameter of the crucible was φ79.

  In this numerical simulation, the model is divided into minute volumes. It is desirable that the dimension in the direction in which the vapor particles flow within the minute volume be less than the mean free path. For each minute volume, the collision and scattering of vapor particles are calculated. For the algorithm, reference was made to the above-described explanations (edited by the Japan Society of Mechanical Engineers, “Flow of atoms and molecules”, Kyoritsu Shuppan (1996), Yasuhara et al., “Computational Fluid Dynamics”, University of Tokyo Press (1991)).

  Further, vapor particles of the vapor deposition material were spouted from the bottom surface of the modeled crucible 200. In this embodiment, CsI (cesium iodide), which is a general vapor deposition material for scintillators, is employed as the vapor deposition material. Then, the value of the flux from the above-mentioned springing surface was determined so that the inside of the crucible 200 was saturated with the vapor pressure of CsI. The velocity distribution of vapor particles on the spring surface was given by Cosine distribution. Moreover, the initial temperature of the vapor particle according to it was made more than melting | fusing point of CsI. The modeled wall surface of the Y opening 400 and the wall surface of the crucible 200 were configured to diffusely reflect vapor particles. Furthermore, the temperature of the wall surface was given above the melting point of CsI.

  Examples of the results of numerical simulation of steam bending in the above model are shown in FIGS. 8-1 and 8-2. FIG. 8A shows the density distribution of vapor particles on the same plane as the Y opening 400. As a matter of course, this figure results in a high density of vapor particles in the Y opening 400. FIGS. 8-1 (B), FIG. 8-2 (C), and FIG. 8-2 (D) sequentially show the surface of the Y opening 400 at the height of 10 mm, 30 mm, and 90 mm vertically from the same surface of the Y opening 400. It is the density distribution of vapor particles in parallel planes. FIG. 8-1 (B) is a result showing the course of the process of gradually forming the shape of the vapor due to collision and scattering between the vapor particles that have passed through the three slits. FIG. 8-2 (C) shows the result that it is understood that the shape of the steam finally becomes a symmetrical “he” shape and is bent.

  FIG. 8-2 (D) shows the result showing that the shape of the vapor in FIG. 8 (C) is maintained. The reason why the shape of the steam can be maintained is that the mean free path of the steam particles is already long at this height (90 mm height). As described above, it is considered that the vapor shape can be kept as it is and the substrate 103 can be reached. Moreover, the bending angle of the steam was evaluated from the line segment connecting the intersections of the center line and the tips on the left and right of the region where the density of the steam particles is high in FIG. As a result, the bending angle was found to be 63 ° as shown in FIG. 8-2 (D). This agrees well with the “angle formed” by the slits shown in FIG.

  From the above results, it was confirmed that the steam viewed from directly above the surface of the Y opening 400 was bent as desired by the configuration of the opening of this example.

  In this way, the vapor can be bent in a desired shape (symmetrical “to” shape by self-organization by a group of vapor particles to deposit the substrate 103 without using an external action other than the opening of the vapor deposition source. Etc.) is an important feature of one aspect of the present invention. This self-organization refers to self-organization in natural science, which is a phenomenon that occurs due to the dynamic interaction between the particles that make up the tissue and the driving force by the space field of the interacting particles. is there. In the self-organization in this vapor deposition system, it is better to consider the dynamic interaction between particles by collision considering potential. In the rare gas dynamics, this collision is considered by the collision cross section defined by the vapor particle diameter and the relative velocity between the particles. On the other hand, the driving force may be considered as a force for changing the shape with a gradient due to the density field of the vapor particles. However, the driving force here is not a mechanical force, but a force handled by the parameters that can be expressed by the potential energy as described above. Due to the self-organization by the vapor particles and the arrangement of the slits that enable the particles to be supplied in a time sufficient to maintain the vapor particles, the vapor is always symmetric as described above. It can be bent into the shape of "".

  Also according to the present embodiment, it is possible to realize a vapor shape that is sufficiently along the circumference of the revolution radius of the substrate that revolves or revolves within the dome-shaped space, and that fits sufficiently in the dome-shaped space. And the material yield can be effectively increased. In particular, with respect to a substrate that is revolving, the effect of making the film thickness on the substrate uniform due to the revolution is generated in substantially the entire circumference of the circle due to the revolution radius, so the film thickness distribution can be reduced.

[Example 2]
In this example, the vapor bending angle was verified using the vacuum evaporation apparatus described in the embodiment. First, the opening 203 of the vapor deposition source 101 had the same shape and dimensions as those in FIG. In addition, a substrate for evaluating the bending angle of the vapor was installed like a substrate 301 shown in FIG. The substrate was a float glass having a square shape, a side of 500 mm, and a thickness of 0.5 mm. Further, _{L 1} in FIG (A) has set up a substrate 301 such that the 555 mm. The opening 300 of the vapor deposition source was set so that the longitudinal direction of the lower half (I part) slit in the Y opening of FIG. 7 coincided with the direction of L ₃ shown in FIG. Furthermore, the rear surface (outer surface) of the slit wall of the upper half (V section) in FIG. 7 was arranged so as to face the direction 303 in FIG.

Next, the flow for evaluating the bending angle of steam will be described. First, CsI (cesium iodide), which is the same vapor deposition material as in [Example 1], was charged into the crucible 200 of the vapor deposition source 101 in an amount sufficient to measure the thickness with a micrometer described later. And with the vacuum pump 104, the pressure in the chamber 100 for vacuum was made into 1.0 * 10 < ^-3 > Pa or less. Then, heating of the crucible 200 was started with the heater 201 of the vapor deposition source. When the temperature of the crucible 200 reached the melting point or higher, the shutter 206 was opened, and the substrate corresponding to the substrate 301 described above was vapor deposited. After the deposition, the substrate was sufficiently cooled by the cooling plate 106 and then released to the atmosphere, and the deposited substrate was taken out from the vacuum chamber 100. Next, lattice-shaped measurement points formed parallel to each other at 50 mm intervals in both the revolution radius direction L _{3 of} the deposited substrate 301 shown in FIG. 3B and the direction L ₂ perpendicular to the direction are provided. The film thickness at each measurement point was measured with a micrometer.

  As a result, FIG. 9 shows a film thickness distribution in which the film thickness in the substrate is illustrated on the equal film thickness line. In the same figure, a line was drawn so as to intersect the equal film thickness line at a right angle except for the center line, and the bending angle was evaluated from the line. As a result, as shown in the figure, the bending angle of the steam was found to be approximately 66 °. This result coincides with the bending angle of [Example 1] in which the bending angle in the vicinity of the Y opening is verified by numerical simulation. Furthermore, it was confirmed that it coincided with the target bending angle.

  Also by the present Example, the same effect as the said embodiment and Example 1 was able to be show | played.

  101 .. Vapor deposition source, 103 .. Substrate, 105 .. Support member (jig), 203 .. Opening, 400 .. Opening, 401, 402.

Claims (15)

A vapor deposition source used in a vapor deposition apparatus and containing a vapor deposition material,
It has an opening through which vapor of the vapor deposition material passes, and the opening has a shape in which a plurality of slit-shaped openings intersect at an inner end, and has a wall along a part of an edge of the opening. Deposition source.   The vapor deposition source according to claim 1, wherein the opening has a shape in which three linear slit-shaped openings intersect at an inner end.   The vapor deposition source according to claim 1, wherein the opening is symmetric with respect to a center line.   The vapor deposition source according to claim 2, wherein the opening has a Y shape.   The walls are provided at the outer edges of the two slit-shaped openings that are the V part of the Y-shaped opening and the outer edge of one slit-shaped opening that is the I part of the Y-shaped opening. The vapor deposition source according to claim 4, wherein the vapor deposition source is a vapor deposition source.   The wall provided at the outer edge of the two slit-shaped openings, which are V portions of the Y-shaped opening, is provided longer than the width of the slit-shaped opening. Deposition source.   The wall provided at the outer edge of one slit-like opening which is the I portion of the Y-shaped opening is provided longer than the width of the slit-like opening. Deposition source described.   The vapor deposition source according to claim 1, wherein the wall has an angle of 90 ° with respect to a surface of the opening.   The dimensions of the opening and each part of the wall are determined so that the vapor of the vapor deposition material becomes a continuous flow or an intermediate flow in consideration of the mean free path of vapor particles calculated from the vapor pressure of the vapor deposition material. The vapor deposition source according to any one of claims 1 to 8, wherein:   The surface roughness of each part of the opening and the wall is determined so that collision and scattering between vapor particles in the main flow passing through the plurality of slit-like openings are dominant. The vapor deposition source according to any one of 1 to 8. A vapor deposition apparatus comprising: a support member that supports a substrate; and the vapor deposition source according to any one of claims 1 to 10,
The vapor deposition apparatus characterized in that the support member can change at least one of revolution and rotation of the substrate and change an angle or arrangement of the substrate with respect to a surface of the opening of the vapor deposition source.   The vapor deposition apparatus according to claim 11, wherein the support member revolves the substrate.   The said opening part is Y shape, The longitudinal direction of one slit-shaped opening of the I part of the said Y-shaped opening part corresponds to the direction of the revolution radius of the said board | substrate. Vapor deposition equipment.   The vapor deposition apparatus according to claim 12 or 13, wherein the opening is Y-shaped, and two slit-shaped openings, which are V portions of the Y-shaped opening, are arranged outside the revolution radius.   The said wall has the wall provided in the outer edge of the two slit-shaped opening which is the V part of the said Y-shaped opening part, This wall is arrange | positioned on the outer side in a revolution radius, It is characterized by the above-mentioned. 14. The vapor deposition apparatus according to 14.