JP2006225706A - Vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which precisely detects the thickness of a film formed on a member to be vapor-deposited by precisely measuring an emitted amount of a vaporizing material. <P>SOLUTION: This vapor deposition apparatus comprises: a first monitoring guide-tube 22 which is diverged from a first main guide-tube 21 and takes out one part of a first vaporizing material in the first main guide tube 21 for monitoring the emitted amount of the vaporizing material; and a first vaporization-rate-detecting sensor 8 which is arranged on a trajectory N1 of the first vaporizing material in the first monitoring guide-tube 22 and detects the film thickness. Thereby, the vapor deposition apparatus can detect the first vaporizing material having high density, which is emitted from the first monitoring guide-tube 22, can precisely grasp a varying amount of the first vaporizing material emitted from the first main guide-tube 21 toward a glass substrate 1, as a result, can precisely measure the vaporization rate of the first vaporizing material, and accordingly can precisely detect the thickness of the film formed on the glass substrate 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an apparatus for depositing evaporated material on a member to be deposited, and relates to a technique applicable to, for example, a deposition apparatus for manufacturing an image display unit such as an organic EL display.

  In recent years, thinning of displays has progressed, and as this type of display, liquid crystal displays have been put to practical use. This liquid crystal screen requires a backlight and has difficulties in view range, power consumption, etc. Recently, a self-luminous organic EL display has been attracting attention.

  By the way, the basic structure of the organic EL display is an arrangement in which an anode (transparent electrode) is arranged on a glass substrate, a hole transport layer and a light emitting layer are arranged in this order, and a cathode is further arranged. At least for the light emitting layer, an organic material is formed by vapor deposition.

  When a thin film is formed on the substrate by vapor deposition, an organic material evaporation device is disposed in the lower part of the vacuum vessel, the evaporation device is heated in a vacuum state, and the vapor (hereinafter referred to as evaporation material) is discharged from the evaporation device. Is attached to the surface of the substrate disposed in the upper part of the vacuum vessel.

By the way, the above-described vapor deposition apparatus is usually provided with a quartz vibrator type film thickness meter at the end of the substrate for detecting and monitoring the film thickness of the vapor deposited film deposited on the substrate. And, by measuring the film thickness formed on the substrate with this crystal oscillator type film thickness meter and controlling the evaporation amount of the vapor deposition material, the quality of the vapor deposition film has been improved (for example, , See Patent Document 1).
JP-A-11-29854

  However, when measuring the amount of evaporating material released, in the configuration shown in Patent Document 1, the evaporating material is released from the opening of the evaporating device with a spread to the substrate, so that it is separated from the opening and the center of the flight path. As the density of the evaporation material becomes smaller, the evaporation material having a density lower than that of the substrate comes to the film thickness meter. For this reason, the variation amount of the evaporation material at the center of the substrate is different from the variation amount of the evaporation material at the edge of the substrate, and the amount of evaporation material released cannot be accurately measured. There is a problem that cannot be detected accurately.

  In view of this, the present invention has an object to provide a vapor deposition apparatus that can accurately detect the film thickness to be deposited on a vapor deposition member by accurately measuring the amount of vaporized material released. .

  In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention comprises an evaporation means having a main guide tube for guiding an evaporation material obtained by heating and evaporating the evaporation material, A vapor deposition apparatus that discharges from a main induction tube and deposits it on a member to be vapor-deposited, the monitoring induction tube being branched from the main induction tube and taking out part of the evaporated material in the main induction tube for monitoring, and the monitoring And an evaporation rate detecting means for detecting the evaporation rate provided on the flight path of the evaporation material of the guide tube.

  Further, the invention according to claim 2 is the invention according to claim 1, wherein a shielding member for blocking the evaporation material discharged from the main guide tube and the evaporation material released from the monitoring guide tube is provided. It is characterized by.

  The invention according to claim 3 is the invention according to claim 1 or 2, wherein the main guide pipe and the monitoring guide pipe are connected to a branch portion of the main guide pipe and the monitoring guide pipe. A valve body for adjusting the flow rate is provided.

  Furthermore, the invention according to claim 4 is the invention according to claim 3, wherein the valve body that adjusts the flow rate by withdrawing / withdrawing has a through hole in a direction intersecting with the withdrawing / withdrawing direction, The flow rate of the evaporation material is adjusted by positioning the through hole on the flight path of the main guide tube along the flight axis.

In addition, the invention described in claim 5 is the invention described in claim 4, characterized in that a plurality of through holes are provided in the direction in which the valve body is retracted.
The invention according to claim 6 is the invention according to claim 3, wherein the valve body is formed in a columnar shape, and is separated by a predetermined distance in a retracting direction of the valve body and predetermined in different directions. By having at least one through hole formed at an angle, by retracting the valve body, positioning the through hole on the flight path of the main guide tube, and rotating the valve body The flow rate of the evaporation material is adjusted.

  The invention according to a seventh aspect is the invention according to the third aspect, wherein the valve body is formed in a columnar shape, and is separated by a predetermined distance in a retracting direction of the valve body and predetermined in different directions. The first through hole and the second through hole having different diameters formed at an angle are provided, and either one of the first through hole and the second through hole is allowed to move out and withdraw the valve body, or The first through hole and the second through hole are positioned on the flight path of the main guide tube, and the flow rate of the evaporation material is adjusted by rotating the valve body.

  In the vapor deposition apparatus of the present invention, since the monitoring guide pipe is branched from the main guide pipe, the evaporation material at a certain ratio can be taken out with respect to the amount of the evaporated material released from the main guide pipe, and By providing, for example, a quartz oscillator type evaporation rate detection means on the flight axis of the flight path of the monitoring guide tube, it is possible to stably detect a high-density evaporation material discharged from the monitoring guide tube. Since the fluctuation amount of the evaporation material released from the main induction tube to the vicinity of the center of the deposition target can be accurately grasped, the evaporation rate of the evaporation material and the evaporation rate per unit time are accurate. Therefore, it is possible to accurately measure the film thickness formed on the deposition target member.

Hereinafter, an evaporation apparatus according to an embodiment of the present invention will be described with reference to the drawings.
In each embodiment, when a display unit of an organic EL display is manufactured, that is, when an organic material is vapor-deposited on the surface of a glass substrate, two different vapor deposition materials (which are organic materials) are vapor-deposited. The case will be described. Of the different vapor deposition materials, the main component is called the first vapor deposition material (host), the trace material is called the second vapor deposition material (dopant), and each vapor deposition material is heated and evaporated. Will be referred to as first and second evaporation materials.
[Embodiment 1]
As shown in FIG. 1, a vapor deposition apparatus includes a vapor deposition container 3 in which a glass substrate (an example of a member to be vapor-deposited) 1 is inserted in a horizontal direction so that its vapor deposition surface is downward and held by a holder 2. And a first evaporation container (an example of an evaporation means) 4 that is disposed below the deposition container 3 and evaporates by heating the first deposition material in the material container 4A, and is also disposed below the deposition container 3 The second evaporation container (an example of the evaporation means) 5 that heats and evaporates the second vapor deposition material in the material container 5A, and the first discharge centered on the flight axis M of the flight path M1 toward the glass substrate 1. The first shutter 6 that restricts the supply of the first evaporation material by blocking or releasing the evaporation material, and the first evaporation material that is emitted around the flight axis M of the flight path M2 toward the glass substrate 1 are blocked or opened. To limit the supply of the second evaporation material A second shutter 7, a quartz vibrator type first evaporation rate detection sensor (an example of an evaporation rate detection means) 8 for detecting an evaporation rate which is a discharge rate of the first evaporation material and an amount of discharge per unit time; A quartz-crystal-type second evaporation rate detection sensor (an example of evaporation rate detection means) 9 is provided that detects an evaporation rate that is the release rate of the second evaporation material and the amount released per unit time. Each of the evaporation rate detection sensors 8 and 9 is connected to a control device (not shown), and the evaporation rate is obtained by a timer or a discharge amount measuring device provided in the control device.

  Each of the evaporation containers 4 and 5 includes heating heating wires (an example of heating means) 10 and 11 for heating the evaporation containers 4 and 5 to evaporate the vapor deposition material, and each material container 4A. , 5A to heat the heaters 14 and 15 for evaporating the vapor deposition materials in the material containers 4A and 5A. The shutters 6 and 7 are disposed at the outlet openings of the evaporation containers 4 and 5 and are flying along the flight paths M1 and M2 from a position eccentric via a lid 12 formed in a disk shape. By rotating the rotary shaft 13 formed in parallel with the axis M, each evaporation material is blocked or opened.

  The first evaporation container 4 has a material container 4A in which the first vapor deposition material is stored, and the flight path M1 set toward the position where the film pressure uniformity is the best with respect to the glass substrate 1. A first main guide pipe 21 having a large diameter and a cylindrical shape from which the first evaporating material is discharged with the flight axis M as the center, and a first main guide pipe 21 branched obliquely upward from an intermediate portion of the first main guide pipe 21. The first monitoring guide pipe 22 (an example of a monitoring guide pipe) having a small diameter for taking out a part of the first evaporating material for monitoring is formed. A portion branched from the first main guide pipe 21 to the first monitoring guide pipe 22 is referred to as a branch portion A. In addition, the first monitoring guide tube 22 discharges the first evaporation material around the flight axis N of the flight path N1 toward the first evaporation rate detection sensor 8.

  Here, the first main guide pipe 21 is formed of a first upstream main guide pipe 21A on the upstream side of the branch part A and a first downstream main guide pipe 21B on the downstream side of the branch part A. The first downstream main guide pipe 21B and the first monitoring guide pipe 22 are each formed to have a length that allows the first evaporation material to be stably discharged from the branch part A.

  Further, one end of the branch part A is connected to the lower shielding part 25A located between the first downstream main guiding pipe 21B and the first monitoring guiding pipe 22 and the other end of the lower shielding part 25A. The first shielding plate 25 (an example of a shielding member) configured from the upper shielding portion 25B is provided, and the first shielding plate 25 is the first of the flight path M1 emitted from the first main guide tube 21. The first evaporating material and the first evaporating material in the flight path N1 discharged from the first monitoring guide tube 22 are configured to be blocked from each other and not mixed, and the first evaporating material discharged from the first monitoring guiding tube 22 The evaporation material is prevented from adhering to the glass substrate 1 and the first evaporation material discharged from the first main guide tube 21 is prevented from being detected by the first evaporation rate detection sensor 8.

  The second evaporation container 5 has a material container 5A in which a second vapor deposition material is accommodated, and the second evaporation material is released around the flight axis M of the flight path M2 toward the vicinity of the center of the glass substrate 1. The second main induction pipe 31 having a large cylindrical diameter and a part of the second evaporation material of the second main induction pipe 31 that is branched obliquely upward from an intermediate portion of the second main induction pipe 31 for monitoring. Therefore, the second monitoring guide pipe 32 (an example of the monitoring guide pipe) having a small diameter is formed. A portion branched from the second main guide pipe 31 to the second monitoring guide pipe 32 is referred to as a branch portion B. Further, the second monitoring guide tube 32 discharges the second evaporation material around the flight axis N of the flight path N2 toward the second evaporation rate detection sensor 9.

  Here, the second main guide pipe 31 is formed of a second upstream main guide pipe 31A on the upstream side of the branch section B and a second downstream main guide pipe 31B on the downstream side of the branch section B. Each of the second downstream main guide pipe 31B and the second monitoring guide pipe 32 is formed to have a length capable of stably discharging the second evaporation material from the branch part B.

  Further, one end of the branch part B is connected to the lower shielding part 35A located between the second downstream main guiding pipe 31B and the second monitoring guiding pipe 32 and the other end of the lower shielding part 35A. A second shielding plate 35 (an example of a shielding member) configured from the upper shielding portion 35B is provided, and this second shielding plate 35 is the second of the flight path M2 emitted from the second main guide pipe 31. The second evaporating material and the second evaporating material in the flight path N2 released from the second monitoring guide pipe 32 are configured to be blocked from each other and not mixed, and the second evaporating material discharged from the second monitoring guide pipe 32 is used. The evaporation material is prevented from adhering to the glass substrate 1 beyond the second evaporation rate detection sensor 9.

  Since the first evaporation rate detection sensor 8 releases a large amount of the first evaporation material released from the first evaporation container 4, the glass substrate on the flight axis N of the flight path N1 of the first monitoring guide tube 22 is used. 1, that is, at a position away from the opening 22 </ b> A of the first monitoring guide tube 22 on the flight axis N of the flight path N <b> 1.

  Since the second evaporation rate detection sensor 9 releases a small amount of the second evaporation material released from the second evaporation container 5, the second evaporation rate detection sensor 9 has a second on the flight axis N of the flight path N2 of the second monitoring guide tube 32. It is arranged in the vicinity of the opening 32A of the monitoring guide pipe 32.

  Thus, since the first evaporation rate detection sensor 8 and the second evaporation rate detection sensor 9 are arranged in the positional relationship described above, the first evaporation rate detection sensor 8 and the second evaporation rate detection sensor 9 have the same ratio. Therefore, the replacement time of each sensor can be almost the same time.

The operation of the basic configuration described above will be described below.
When the first shutter 6 and the second shutter 7 are opened and the first evaporating material is released using the first main guide tube 21 and the first monitoring guide tube 22, the heating wire 10 and the heating heater 14 are used. When the first vapor deposition material in the material container 4A in the first evaporation container 4 is heated and evaporated by the above, the first vaporized material that is the vaporized first vapor deposition material flies from the first main guide tube 21 to the flight path M1. It is emitted from the first monitoring guide tube 22 to the glass substrate 1 with the axis M as the center, and is arranged in the vicinity of the glass substrate 1 on the flight axis N of the flight path N1 with the flight axis N of the flight path N1 as the center. The first evaporation rate detection sensor 8 is discharged.

  When the second evaporating material is discharged using the second main induction tube 31 and the second monitoring induction tube 32, the material container 5B in the second evaporation container 5 is heated by the heating wire 11 and the heating heater 15. When the second evaporation material is heated and evaporated, the evaporated second evaporation material is discharged from the second main guide tube 31 around the flight axis M of the flight path M2, and the glass substrate 1 And is emitted from the second monitoring guide tube 32 around the flight axis N of the flight path N2, and in the vicinity of the opening 32A of the second monitoring guide pipe 32 on the flight axis N of the flight path N2. It deposits on the detection surface of the 2nd evaporation rate detection sensor 9 arranged.

  As described above, since the first monitoring guide tube 22 is branched from the first main guide tube 21, the first evaporative material released from the first main guide tube 21 has a first ratio at a certain ratio. The evaporation material can be taken out, and the first evaporation rate detection sensor 8 is provided on the flight axis N of the flight path N1 of the first monitoring guide tube 22 to be discharged from the first monitoring guide tube 22. The first evaporative material having a high density can be detected stably, and the amount of fluctuation of the first evaporative material released from the first main guide tube 21 to the vicinity of the center of the glass substrate 1 can be accurately grasped. Therefore, the discharge amount of the first evaporating material can be accurately measured, and therefore the film thickness formed on the glass substrate 1 can be accurately detected. The second monitoring guide pipe 32 branched from the second main guide pipe 31 can also achieve the same effects as described above.

The first shutter 6 and the second shutter 7 are provided in order to block or release the evaporation material released from each evaporation container from flying to the glass substrate 1. Instead of the two shutters 7, two shutter plates 6A and 7A (see FIG. 1) arranged in parallel with the glass substrate 1 or a single shutter plate may be provided immediately below the glass substrate 1.
[Embodiment 2]
Below, the vapor deposition apparatus which concerns on Embodiment 2 of this invention is demonstrated, referring drawings.

  In the second embodiment, the first flow rate control means 40 is provided at the branch portion A in the first evaporation container 4 of the first embodiment, and the second flow rate control means 50 is provided at the branch portion B in the second evaporation container 5. Since it is the structure which comprised, it demonstrates paying attention to these different parts. Note that the same members as those in Embodiment 1 are denoted by the same reference numerals for description. Further, since the first flow rate control means 40 and the second flow rate control means 50 have the same configuration, description of the second flow rate control means 50 is omitted.

  As shown in FIG. 2, the first flow rate control means 40 provided at the branch portion A in the first evaporation container 4 has the same path as the first monitoring guide pipe 22 through the first main guide pipe 21. A first valve rod passage tube 43 that is branched obliquely downward from the first main guide tube 21 and has the same diameter as the first monitoring guide tube 22, and a first valve rod passage tube 43. The first bellows 42 provided at the end of the first rod 42, a rectangular columnar first valve rod 41 (an example of the first valve body) that can be moved back and forth across the first main guide tube 21 and the first monitoring guide tube 22. ) And a first valve rod drive device 44 that is provided at the end of the first bellows 42 and moves the first valve rod 41 back and forth. The diameters of the first monitoring guide pipe 22 and the first valve rod passage pipe 43 are the same as those of the first main guide pipe 21.

  As shown in FIG. 3, the first valve rod 41 has a shut-off portion 45 and a flow rate adjusting portion 46, and the shut-off portion 45 extends from the front end portion (extension direction side) of the first valve rod 41 to the vicinity of the center portion. Each of the guide passages is formed, and the flow rate adjusting unit 46 is formed adjacent to the blocking unit 45, and has a large diameter through hole 46 </ b> A, a medium diameter through hole 46 </ b> B, and a small diameter through hole in the direction of the first valve rod 41. The hole 46C is provided, and the flow rate of the first main guide pipe 21 can be adjusted (flow rate restriction). Each of the through holes 46A, 46B, 46C is formed in a direction intersecting with the moving direction of the first valve rod 41, that is, in a direction along the flight axis M of the flight path M1 of the first main guide tube 21, for example, in parallel. Has been.

  The first valve rod 41 has a built-in sheath heater and thermocouple (not shown) for performing heating control, and these cables (not shown) are connected from the first valve rod drive device 44 side. ing.

Hereinafter, the operation of the second embodiment will be described.
Here, a method of adjusting the flow rate (including opening and closing) of each induction tube by the first valve rod 41 in a state where stable vapor deposition is performed on the glass substrate 1 will be described.

  When the first main guide pipe 21 and the first monitoring guide pipe 22 are opened by the first valve stem 41, the first valve stem 41 is retracted into the first valve stem passage pipe 43 by the first valve stem drive device 44. The first main guiding path 21 and the first monitoring guiding pipe 22 are opened.

  When the first main guide pipe 21 and the first monitoring guide pipe 22 are shut off, the first valve stem 41 is extended by the first valve stem drive device 44, and the tip of the first valve stem 41 is monitored for the first time. The first main guiding path 21 and the first monitoring guiding pipe 22 are put into a blocking state by being inserted into the guiding pipe 22 and positioning the blocking portion 45 on the flow path of the first main guiding pipe 21.

  As described above, since only the first valve rod 41 is moved back and forth, the first main guide pipe 21 and the first monitoring guide pipe 22 can be opened or shut off. The structure for opening and closing the guide tube can be simplified, and therefore the cost of the apparatus can be reduced.

  Further, when the flow rate of the first main guide pipe 21 is adjusted in a state where the first monitoring guide pipe 22 is shut off, the first valve stem 41 is withdrawn / retracted by the first valve stem drive device 44, and the first main guide pipe By positioning any of the through holes 46A, 46B, 46C on the flow path 21, the first main guide pipe 21 is discharged from the first upstream main guide pipe 21A to the first downstream main guide pipe 21B. 1 Adjust the flow rate of the evaporation material. Note that the through hole 46A is used when the flow rate of the first evaporation material is large, the through hole 46B is used when the flow rate is medium, and the through hole 46C is used when the flow rate is small. .

  Thus, by moving the first valve rod 41 back and forth and positioning any of the through holes 46A, 46B, and 46C on the flow path of the first main guide pipe 21, the first main guide pipe 21 has the first It is possible to easily adjust the flow rate of the first evaporating material discharged from the first upstream main guiding pipe 21A to the first downstream main guiding pipe 21B.

  Further, when the first main guide pipe 21 and the first monitoring guide pipe 22 are shut off by the first valve rod 41 due to replacement of the glass substrate 1 or the like, the first upstream main guide in the first evaporation container 4 in the meantime. Since there is a possibility that the first evaporating material is saturated in the tube 21A, when the first main guide tube 21 is opened by the first valve rod 41, the first evaporating material is directed toward the glass substrate 1 at once. As a result, a large amount is released, and stable film thickness control becomes difficult.

  At this time, as shown in FIG. 3, by forming a notch 47 in a part of the tip of the first valve rod 41, the inside of the first upstream main guide pipe 21 </ b> A of the first evaporation container 4. The first evaporative material in the saturated state at or near the saturated state is discharged from the first upstream main guide tube 21A to the first monitoring guide tube 22 without flowing to the first downstream main guide tube 21B, and is in a stable state. Can be returned to. Also, in the heating after replenishing the vapor deposition material, the first main guide tube 21 is closed by the first valve rod 41 and the heating is continued, and the evaporation rate, which is the discharge rate and the discharge amount per unit time, is monitored. It is also possible to open and close only the first monitoring guide tube 22 using the notch 47.

  In the second embodiment, the first monitoring guide pipe 22 and the first valve rod passage pipe 43 in the first evaporation container 4 are provided in an inclined state with respect to the first main guide pipe 21. However, as shown in FIG. 4, it may be formed in a direction orthogonal to the first main guide pipe 21. Also at this time, the through holes 46A, 46B, 46C of the first main guide tube 21 are formed in a direction along the flight axis M of the flight path M1 of the first main guide tube 21, for example, in parallel.

In addition, since each effect | action mentioned above is similarly performed regarding the 2nd flow volume adjustment means 50 of the 2nd container 5 for evaporation, the same effect can be show | played.
[Embodiment 3]
Below, the vapor deposition apparatus which concerns on Embodiment 3 of this invention is demonstrated, referring drawings.

  In the third embodiment, the first flow rate control means 60 is provided at the branch portion A in the first evaporation container 4 of the first embodiment and the second flow rate control means 70 is provided at the branch portion B in the second evaporation container 5. Since it is the structure which comprised, it demonstrates paying attention to these different parts. Note that the same members as those in Embodiment 1 are denoted by the same reference numerals for description. Moreover, since the 1st flow control means 60 and the 2nd flow control means 70 are the same structures, description of the 2nd flow control means 70 is abbreviate | omitted.

  As shown in FIG. 5, the first flow rate control means 60 provided at the branching portion A in the first evaporation container 4 is a first valve rod passage branched in a direction perpendicular to the first main guide pipe 21. A square columnar shape that can be moved back and forth across the pipe 63, the first bellows 62 provided at the end of the first valve rod passage pipe 63, the first main guide pipe 21 and the first monitoring guide pipe 22. The first valve rod 61 and a first valve rod drive device 64 that is provided at the end of the first bellows 62 and moves the first valve rod 61 back and forth. The first valve rod passage pipe 63 has the same diameter as that of the first main guide pipe 21.

  As shown in FIG. 6, the first valve rod 61 has a blocking portion 65, a flow rate adjusting portion 66, and a notch 67, and the blocking portion 65 is a tip portion (extension direction side) of the first valve rod 61. ) To the vicinity of the central portion, each guide path is blocked, and the flow rate adjustment portion 66 is formed adjacent to the cutoff portion 65 and has a through hole 66A to adjust the flow rate of the first main guide pipe 21. The notch 67 is notched in parallel with the inclination of the first monitoring guide tube 22 and is formed so as to contact the first monitoring guide tube 22. The through hole 66A is formed in parallel with the flight axis M of the flight path M1 of the first main guide tube 21.

  The first valve rod 61 has a built-in sheath heater and thermocouple (not shown) for performing heating control, and these cables (not shown) are connected from the first valve rod drive device 64 side. ing.

Hereinafter, the operation in the third embodiment will be described.
Here, a method of adjusting the flow rate (including opening and closing) of each induction tube by the first valve rod 61 in a state where stable vapor deposition is performed on the glass substrate 1 will be described.

  When the first main guiding pipe 21 and the first monitoring guiding pipe 22 are opened by the first valve stem 61, the first valve stem 61 is retracted into the first valve stem passage pipe 63 by the first valve stem driving device 64. The first main guide pipe 21 and the first monitoring guide pipe 22 are opened.

  When only the first monitoring guide tube 22 is opened, the first valve rod 61 is extended by the first valve rod drive device 64 and the blocking portion 65 is positioned on the flow path of the first main guide tube 21. Only the first monitoring guide tube 22 is opened.

  In this way, by moving only the first valve rod 61 back and forth, the first main guide pipe 21 and the first monitoring guide pipe 22 can be opened or only the first monitoring guide pipe 22 can be opened. The opening / closing structure of each induction tube in the first evaporation container 4 can be simplified, and the cost of the apparatus can be reduced.

  Further, when only the first main guide pipe 21 is opened with the first monitoring guide pipe 22 shut off, the first valve stem 61 is extended by the first valve stem drive device 64 so that the notch 67 is the first portion. The flow path in the first main guide pipe 21 is smaller than the diameter of the first main guide pipe 21 by contacting the monitoring guide pipe 22 and positioning the through hole 66A on the flow path of the first main guide pipe 21. Therefore, the flow rate of the first evaporating material discharged from the first upstream main guiding pipe 21A to the first downstream main guiding pipe 21B is adjusted.

  Thus, by positioning the through-hole 66A on the flow path of the first main guide pipe 21, the flow rate of the first evaporation material discharged from the first upstream main guide pipe 21A to the first downstream main guide pipe 21B. Adjustment (flow restriction) can be easily performed.

  Further, when the first main guide pipe 21 and the first monitoring guide pipe 22 are shut off by the first valve rod 61 by replacing the glass substrate 1 or the like, the first upstream main guide pipe 21A in the first evaporation container 4 is used. Since there is a high possibility that the first evaporating material is saturated or nearly saturated, the first main guide pipe 21 and the first monitoring guide pipe 22 are opened by the first valve rod 61. Then, a large amount of the first evaporation material is released at once.

  Since the notch 67 at the tip of the first valve rod 61 is in contact with the inner wall surface of the first monitoring guide tube 22 at the time of the shut-off, the first valve rod 61 is slightly retracted to perform the first monitoring. By opening only the induction pipe 22, the saturated first evaporation material in the first upstream main induction pipe 21A of the first evaporation container 4 can be adjusted from the first upstream main induction pipe 21A while adjusting the flow rate. Therefore, the first evaporating material can be prevented from flowing into the first downstream main guiding pipe 21B at a stretch, and the glass substrate 1 is not inadvertently controlled. The formation can be prevented.

In addition, since each effect | action mentioned above is performed similarly regarding the 2nd flow control means 70 of the 2nd container 5 for evaporation, the same effect can be show | played.
Here, when the flow rate of each evaporation material is adjusted, in the second embodiment, the first valve rod 41 having the flow rate adjusting portion 46 in which the through holes 46A, 46B, and 46C are formed is used. 3, the first valve rod 61 having the flow rate adjusting portion 66 in which the through-hole 66A is formed is used. However, as shown in FIG. A blocking portion 82 that is formed to the vicinity of the central portion and blocks each guide path, and a large-diameter formed adjacent to the blocking portion 82, separated by a predetermined distance in the exit / retreat direction and separated by a predetermined angle in a different direction. The first valve rod 81 in which the flow rate adjusting part 83 having the through hole 83A (an example of the first through hole) and a small diameter through hole 83B (an example of the second through hole) is formed may be used. At this time, since the first valve rod 81 is formed in a columnar shape, at least the first valve rod passage tube and the first monitoring guide tube 22 must be formed in a cylindrical shape. The large-diameter through-hole 83A and the small-diameter through-hole 83B are formed at a predetermined angle, and this predetermined angle means that the through-hole 83A and the through-hole 83B are simultaneously on the flow path of the first main guide pipe 21. Means the angle that can be located at.

  For example, when the flow rate of the first main guide pipe 21 is adjusted using the first valve stem 81 in the third embodiment, the first valve stem 81 is moved by the first valve stem drive device 64 as shown in FIG. By extending and positioning the through holes 83A and 83B on the flow path of the first main guide pipe 21, and rotating the first valve stem 81 by the first valve stem drive device 64, the first upstream main guide pipe 21A. The flow rate of the first evaporation material discharged from the first downstream portion main guide pipe 21B is adjusted. When the flow rate is medium, only the through hole 83A is opened. When the flow rate is small, only the through hole 83B is opened. When the flow rate is large, both through holes 83A and 83B are opened. . Further, the first valve stem 81 is rotated by the first valve stem drive device 64 so that the opening portions of the through holes 83A and 83B are opposed to the side portions of the first main guide tube 21, thereby making the first main guide. The path 21 can be cut off.

  Thus, by rotating the first valve rod 81 and positioning any one of the through holes 83A, 83B or both through holes 83A, 83B on the flow path of the first main guide pipe 21, the first upstream main It is possible to easily adjust the flow rate of the first evaporation material discharged from the guide pipe 21A to the first downstream main guide pipe 21B.

In addition, since each effect | action mentioned above is similarly performed regarding the 2nd flow volume control part 91 of the container 5 for 2nd evaporation, the same effect can be show | played.
Moreover, you may provide a flow control valve (not shown) in the opening part of the 1st monitoring guide pipe 22 and the 2nd monitoring guide pipe 32 in said each embodiment, respectively.

  With the above configuration, when the first evaporation rate detection sensor 8 and the second evaporation rate detection sensor 9 are not used or during film formation, they are emitted from the first monitoring guide tube 22 and the second monitoring guide tube 32. Since the flow rate of each evaporating substance can be controlled by each flow rate control valve, vapor deposition on the first evaporation rate detection sensor 8 and the second evaporation rate detection sensor 9 can be suppressed, and therefore the first evaporation rate detection sensor. The lifetime of the crystals (crystal oscillators) of the 8 and the second evaporation rate detection sensor 9 can be extended. This is particularly effective for the first evaporation rate detection sensor 8 in which the amount of discharge of the first evaporation material obtained by heating and evaporating the first vapor deposition material (host) as the main component is large.

  Further, before the vapor deposition operation is performed on the glass substrate 1, the evaporation rate detected by each of the sensors 8 and 9 and the film formation rate on the glass substrate 1 (the film formation speed, the change in the film thickness per unit time). ), The first evaporation material discharged from the first main induction tube 21 and the second evaporation material released from the second main induction tube 31 are attached directly below the glass substrate 1. A crystal oscillator type film formation rate detection sensor (not shown) for detecting the film formation rate is provided, and an experiment for data collection is performed.

  More specifically, the detection values of the film formation rate detection sensor and the first evaporation rate detection sensor 8 or the second evaporation rate detection sensor 9 are obtained at the same time, and the relationship between the film formation rates corresponding to the evaporation rates is made into a database. This makes it possible to determine whether an evaporation rate that can be started is secured before the start of the vapor deposition operation, and even if the evaporation rate changes during the vapor deposition operation, it can be converted into a film formation rate from the database, and therefore an accurate film thickness Management can be performed.

  In each of the above embodiments, the first bellows and the second bellows are provided at the ends of the first valve rod passage tube and the second valve rod passage tube. The gap between the rod passage tube and the gap between the second valve rod and the second valve rod passage tube is sufficiently small, that is, the sealing performance is high, and the amount of leakage of the first evaporation material and the second evaporation material from the gap. If there is little, it is not necessary to use the said 1st bellows and the 2nd bellows, for example, it is a shielding board between the glass substrate 1 so that the leaked 1st evaporation material and 2nd evaporation material may not be discharge | released directly to the glass substrate 1. May be provided.

It is a figure which shows schematic structure of the vapor deposition apparatus which concerns on Embodiment 1 of this invention. It is a figure which shows schematic structure of the vapor deposition apparatus which concerns on Embodiment 2 of this invention. It is the valve rod of the vapor deposition apparatus, (a) is a top view, (b) is a side view. It is sectional drawing of the 1st evaporation container in the other form of the vapor deposition apparatus. It is sectional drawing of the 1st evaporation container of the vapor deposition apparatus which concerns on Embodiment 3 of this invention. It is the valve rod of the vapor deposition apparatus, (a) is a top view, (b) is a side view. It is the valve rod in the other form of the vapor deposition apparatus, (a) is a top view, (b) is a side view. It is sectional drawing at the time of performing flow volume adjustment with the valve rod in the other form of the vapor deposition apparatus.

Explanation of symbols

4 First evaporation container (evaporator)
5 Second evaporation container (evaporation device)
8 First film thickness detection sensor (film thickness detection means)
9 Second film thickness detection sensor (film thickness detection means)
41, 61, 81 First valve stem (valve)
51, 71, 91 Second valve stem (valve element)
21 First main guide pipe (main guide pipe)
22 First monitoring guide tube (monitoring guide tube)
31 Second main guide pipe (main guide pipe)
32 Second monitoring guide tube (monitoring guide tube)
46A, 46B, 46C, 66A, 83A, 83B Through hole

Claims (7)

A vapor deposition apparatus comprising an evaporation means having a main induction tube for guiding an evaporation material obtained by heating and evaporating the vapor deposition material, evaporating the evaporation material from the main induction tube and depositing it on a vapor deposition member,
A monitoring guide pipe branched from the main guide pipe and taking out part of the evaporated material in the main guide pipe for monitoring;
An evaporation apparatus comprising evaporation rate detection means provided on a flight path of the evaporation material of the monitoring guide tube and detecting an evaporation rate. The vapor deposition apparatus according to claim 1, further comprising a shielding member that blocks the evaporation material discharged from the main guide tube and the evaporation material discharged from the monitoring guide tube. 3. The vapor deposition apparatus according to claim 1, wherein a valve body for adjusting a flow rate of the main guide pipe and the monitoring guide pipe is provided at a branch portion between the main guide pipe and the monitoring guide pipe. . The valve body that adjusts the flow rate by withdrawing / withdrawing has a through hole in the direction intersecting with the withdrawing / withdrawing direction,
The vapor deposition apparatus according to claim 3, wherein the flow rate of the evaporation material is adjusted by positioning the through hole on the flight path of the main guide tube along the flight axis. The vapor deposition apparatus according to claim 4, wherein a plurality of through holes are provided in a direction in which the valve body is withdrawn and withdrawn. The valve body is formed in a columnar shape, and has at least one through hole formed at a predetermined distance in a different direction and at a predetermined angle in the retracting direction of the valve body,
The flow rate of the evaporating material is adjusted by moving the valve body out of the way so that the through hole is positioned on the flight path of the main guide pipe and rotating the valve body. The vapor deposition apparatus of description. The valve body is formed in a columnar shape, and has a first through hole and a second through hole having different diameters that are separated by a predetermined distance in a different direction and separated by a predetermined angle in the valve retracting direction. And
Retreating the valve body to position the first through hole, the second through hole, or the first through hole and the second through hole on the flight path of the main guide tube; 4. The vapor deposition apparatus according to claim 3, wherein the flow rate of the evaporation material is adjusted by rotating the valve body.

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