JP6300544B2 - Vacuum deposition apparatus and vacuum deposition method - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus and a vacuum deposition method for forming an organic EL film.

A conventional vacuum deposition apparatus for forming an organic EL film includes an evaporation source for heating an evaporation material to obtain an evaporation material, an induction path for transferring the evaporation material obtained by the evaporation source, and an evaporation flowing from the induction path. A release member that releases the material to the deposition target member (for example, Patent Document 1).
The discharge member includes a dispersion container for diffusing the evaporation material, and a plurality of nozzle members protruding toward the deposition target member and having a throttle opening at the tip for discharging the evaporation material to the deposition target member. Have.

  As a method for improving the uniformity of the film thickness, for example, the amount of the evaporation material discharged from each nozzle member to the deposition target member can be adjusted by changing the diameter of the aperture of each nozzle.

JP 2007-332458 A

  However, depending on the diameter of the aperture opening of the nozzle member, not only the amount of evaporation material released from each nozzle member to the deposition target member but also the degree of spread may vary greatly, and the film thickness is not limited to the amount of evaporation material. It changes under the influence of the degree of spread. Therefore, by changing the diameter of the aperture of each nozzle member, the amount and the extent of evaporation material released from each nozzle member to the deposition target member can be simultaneously adjusted with high accuracy to increase the thickness uniformity of the entire film. It ’s difficult.

  Accordingly, the present invention provides a vacuum deposition apparatus capable of accurately adjusting the amount and spread degree of the evaporated material discharged from each nozzle member to the deposition target member, and improving the thickness uniformity of the entire organic EL film, and An object is to provide a vacuum deposition method.

The vacuum evaporation apparatus according to the present invention is
An evaporation source for heating an evaporation material for forming an organic EL film to obtain an evaporation material, a guide path for transferring the evaporation material obtained by the evaporation source, and an evaporation material flowing from the guide path as a member to be evaporated A discharge member that discharges to
A plurality of nozzles, each having a discharge container, a dispersion container for diffusing the evaporating material, and a throttle opening for discharging the evaporating material to the vapor deposition member at the tip thereof. A vacuum evaporation apparatus having a member,
Each nozzle member has an inner diameter D (mm) of the nozzle member, a length L (mm) of the space portion of the nozzle member, and a diameter D ′ (mm) of the aperture opening,
The inner diameter D (mm) of the nozzle member, the length L (mm) of the space portion of the nozzle member, and the diameter D ′ (mm) of the diaphragm opening are expressed by a relational expression:
L ≧ 9D and D ′ ≦ 2.7D ² / L, or L <9D and D ′ ≦ D / 3
The filling,
The discharge member has means for adjusting the flow rate of the evaporation material by adjusting the degree of opening at the opening of the base of each nozzle member so that the flow rate of the evaporation material in each nozzle member becomes a predetermined value. To do.

The vacuum deposition method according to the present invention includes an evaporation source for heating an evaporation material for forming an organic EL film to obtain an evaporation material, a guide path for transferring the evaporation material obtained by the evaporation source, A discharge member that discharges the evaporation material flowing in from the guide path to the deposition target member, and the release member projects toward the deposition target member, a dispersion container for diffusing the evaporation material, and A vacuum deposition method using a vacuum deposition apparatus having a plurality of nozzle members having, at the tip thereof, throttle openings for discharging the evaporation material to the deposition target member,
Each nozzle member has an inner diameter D (mm) of the nozzle member, a length L (mm) of the inner space of the nozzle member, and a diameter D ′ (mm) of the aperture opening, and the inner diameter D of the nozzle member (Mm), the length L (mm) of the internal space of the nozzle member, and the diameter D ′ (mm) of the diaphragm opening are expressed by the relational expression:
L ≧ 9D and D ′ ≦ 2.7D ² / L , or L <9D and D ′ ≦ D / 3
And the flow rate of the evaporation material is adjusted by adjusting the degree of opening at the opening of the base of each nozzle member so that the flow rate of the evaporation material in each nozzle member becomes a predetermined value. To do.

  According to the present invention, a vacuum deposition apparatus capable of accurately adjusting the amount and spread degree of the evaporation material discharged from each nozzle member to the deposition target member, and improving the thickness uniformity of the entire organic EL film, and A vacuum deposition method can be provided.

(Nozzle member length L) · (diaphragm aperture diameter D ′) / (nozzle member inner diameter D) ² and a diagram showing a relationship between n value of cos ⁿ θ rule. It is a figure which shows the relationship between (diameter D 'of an aperture opening part) / (inner diameter D of a nozzle member), and n value of cosn ⁽ theta) rule. It is a figure which shows angle distribution of the evaporation material discharge | released from an aperture opening in the case of L = 30mm, D = 7mm, and D '= 2mm. It is a figure which shows the angle distribution of the evaporation material discharge | released from an aperture opening part in the case of L = 30mm, D = 7mm, and D '= 4mm. It is a schematic block diagram which shows the vacuum evaporation system which concerns on one Embodiment of this invention. It is principal part sectional drawing to which the nozzle member vicinity of the discharge | release member in the vacuum evaporation system shown in FIG. 5 was expanded. It is principal part sectional drawing which shows the state at the time of the flow volume measurement of each nozzle member in the vacuum evaporation system shown in FIG. It is principal part sectional drawing which expanded the nozzle member vicinity of the discharge | release member in the vacuum evaporation system which concerns on other embodiment of this invention.

  The vacuum vapor deposition apparatus of the present invention heats a vapor deposition material for forming an organic EL film to obtain an evaporation material, an induction path for transferring the evaporation material obtained from the evaporation source, and an inflow from the induction path A discharge member that discharges the evaporation material to the deposition target member. The discharge member includes a dispersion container for diffusing the evaporation material, and a plurality of nozzle members protruding toward the deposition target member and having a throttle opening at the tip for discharging the evaporation material to the deposition target member. Have.

  The plurality of nozzle members used in the vacuum deposition apparatus of the present invention have substantially the same shape and dimensions. The plurality of nozzle members may be arranged in a line, and a plurality of the nozzle members may be arranged in parallel.

  The above deposition is performed in a vacuum state. Therefore, the nozzle member only needs to protrude toward the member to be deposited, and the direction in which the evaporation material is discharged from the nozzle member to the member to be deposited may be, for example, the horizontal direction or the vertical direction.

Each nozzle member has an inner diameter D (mm) of the nozzle member, a length of the inner space of the nozzle member (hereinafter referred to as a length of the nozzle member) L (mm), and a diameter D ′ (mm) of the aperture opening. Have. The inner diameter D (mm) of the nozzle member, the length L (mm) of the nozzle member, and the diameter D ′ (mm) of the aperture opening are expressed by the relational expression (1):
L ≧ 9D and D ′ ≦ 2.7D ² / L, or L <9D and D ′ ≦ D / 3
Meet.

The above formula (1) is obtained for the organic material used for forming the organic EL film. In the case where the above formula (1) is satisfied (L · D ′ / D ² shown in FIG. 1 (when L ≧ 9D) is greater than 0 and equal to or less than 2.7 or shown in FIG. 2 (when L <9D) In a region where D ′ / D is greater than 0 and equal to or less than 1/3, the degree of spread of the evaporated material emitted from the aperture opening of each nozzle member toward the deposition target member follows the cos ⁿ θ law. That is, it is approximated by a cos ⁿ θ curve. In this case, the evaporation material discharged from the aperture opening of each nozzle member is deposited with a sufficient spread on the surface of the member to be deposited, so that the uniformity of the film thickness can be improved. As shown in FIG. 1, when L ≧ 9D, in the region where L · D ′ / D ² is greater than 0 and less than or equal to 2.7 (D ′ ≦ 2.7D ² / L), the n value of the cos ⁿ θ rule is About 4 to 4.25. As shown in FIG. 2, when L <9D, in the region where D ′ / D is greater than 0 and equal to or less than 1/3 (D ′ ≦ D / 3), the n value of the cos ⁿ θ rule is about 4.05. ˜4.25.
As the n value of the cos ⁿ θ rule is smaller, the evaporation material spreads and accumulates on the surface of the member to be deposited, and the uniformity of the film thickness is improved. Since the n value of the cos ⁿ θ rule is about 4 to 4.1 and the uniformity of the film thickness can be further improved, when L ≧ 9D, D ′ ≦ 2D ² / L is preferable. Since the n value of the cos ⁿ θ rule is about 4.05 to 4.1 and the uniformity of the film thickness can be further improved, when L <9D, D ′ ≦ 0.2D is preferable.
From the viewpoint of dimensional accuracy of the diameter D ′ of the aperture opening, the diameter D ′ of the aperture opening is, for example, 1 mm or more.

When L ≧ 9D and D ′> 2.7D ² / L, or L <9D and D ′> D / 3, the spread of the evaporation material discharged from the aperture opening of each nozzle member toward the vapor deposition member The degree does not follow the cos ⁿ θ rule, and the evaporation material discharged from the aperture of each nozzle member does not spread with sufficient spread on the surface of the member to be deposited. As a result, the amount of the evaporated material deposited excessively in the region facing the aperture opening of each nozzle member in the member to be vapor-deposited becomes excessive, and the film thickness uniformity decreases.

Here, FIG. 3 shows an example of the angular distribution of the evaporated material released from the aperture opening when the expression (1) is satisfied. FIG. 4 shows an example of the angular distribution of the evaporating material released from the aperture opening when Expression (1) is not satisfied. In the figure, the horizontal axis indicates the radiation angle of the evaporating material from the center of the nozzle of the aperture opening, and the vertical axis indicates the amount of evaporating material discharged with respect to the radiation angle. The solid line in the figure indicates the cos ⁿ θ curve, and the black circles indicate the amount of evaporation material for each radiation angle.
FIG. 3 shows a case where L = 30 mm, D = 7 mm, and D ′ = 2 mm, and satisfies D ′ ≦ D / 3 when L <9D. In this case, as shown in FIG. 3, an angular distribution along the cos ⁿ θ curve is obtained. On the other hand, FIG. 4 shows a case where L = 30 mm, D = 7 mm, and D ′ = 4 mm, and D ′ ≦ D / 3 is not satisfied when L <9D. In this case, as shown in FIG. 4, in the region where the radiation angle is smaller than around 20 °, an angular distribution that deviates greatly from the cos ⁿ θ curve is obtained.

3 and 4 show an example of the angular distribution of the evaporating material discharged from the aperture opening when L <9D, and the same tendency as in FIGS. 3 and 4 is shown even when L ≧ 9D. Specifically, in the case of L ≧ 9D, when D ′ ≦ 2.7D ² / L is satisfied, an angular distribution that approximates the cos ⁿ curve is obtained in all regions as shown in FIG. In the case of L ≧ 9D, when D ′ ≦ 2.7D ² / L is not satisfied, an angle distribution greatly deviating from the cos ⁿ θ curve is obtained in a region where the radiation angle is small as shown in FIG.

When the dimension of L is sufficiently larger than the dimension of D, the probability that the molecules of the evaporation material collide with the inner wall of the nozzle is increased. For this reason, it is difficult for the molecules of the evaporation material to be released from the aperture opening, and among the molecules of the evaporation material released from the aperture opening, the ratio of the molecules of the evaporation material released in the direction along the inner wall of the nozzle is Increase. That is, the ratio of the molecules of the evaporating material released directly above the nozzle among the molecules of the evaporating material released from the nozzle aperture opening increases. As a result, the evaporating material discharged from the aperture opening has a strong tendency not to expand. This tendency becomes more prominent as the nozzle becomes longer.
On the other hand, in the present invention, even when L ≧ 9D, which is sufficiently larger than the value of D, the diameter D ′ of the diaphragm opening is reduced to 2.7 D ² / L or less to reduce the diaphragm opening. By increasing the proportion of molecules of the evaporating material that collide with the portion, the evaporating material released from the aperture opening is expanded, and the degree of expansion of the evaporating material is brought close to the cos ⁿ θ curve.

  Even when a plurality of nozzle members having substantially the same shape and dimensions satisfying the above formula (1) are used, the arrangement form of the plurality of nozzle members in the dispersion container, the connection place of the guide path with the dispersion container, Depending on the shape and the like, the amount of the evaporated material discharged between the nozzle members varies.

  Therefore, in the vacuum vapor deposition apparatus of the present invention, there is provided means for adjusting the flow rate of the evaporation material in each nozzle member so that the discharge member including the nozzle member is used and the flow rate of the evaporation material in each nozzle member becomes a predetermined value. Provide. As the above-mentioned means, for example, a mechanism (for example, a needle valve or a slidable shielding plate) capable of adjusting the degree of opening in the vicinity of the base on the dispersion container side in each nozzle is provided.

  The predetermined flow rate adjusted for each nozzle member is set to reduce the above-described variation. For example, the film thickness distribution for reducing the above-described variation in the case of using a plurality of nozzle members having substantially the same shape and dimensions satisfying the above-described formula (1) in advance before actually using the apparatus. A simulation is performed and obtained based on the simulation. The film thickness distribution can be obtained by synthesizing the amount of the evaporation material released from the aperture opening of each nozzle member and the degree of spread.

  By using the nozzle member satisfying the above formula (1) (with the diameter size of the aperture opening constant) and adjusting the flow rate inside each nozzle member, the aperture opening of the nozzle member is changed to the vapor deposition member. It is possible to accurately adjust the amount and the degree of spread of the evaporating material released toward the target. As a result, the thickness uniformity of the entire film formed by depositing the evaporation material on the surface of the vapor deposition member can be greatly increased. In the present invention, a substantially uniform film can be obtained in a state where the discharge member and the vapor deposition member are fixed.

  Whether or not the flow rate of the nozzle member is adjusted to a value based on the simulation may be confirmed using, for example, means for measuring the amount of the evaporated material released from each nozzle member. The means for measuring the amount of the evaporated material discharged from each nozzle member is preferably a film thickness detecting means for measuring the thickness of the deposited film formed immediately above the outlet (throttle opening) of the nozzle member. As the film thickness detection means, for example, a crystal oscillator type film thickness detection sensor can be cited. The film thickness detection sensors are respectively installed immediately above the outlets (throttle openings) of the nozzle members. The means for measuring the thickness of the deposited film is removed in actual use.

The vacuum deposition method of the present invention includes an evaporation source for heating an evaporation material for forming an organic EL film to obtain an evaporation material, a guide path for transferring the evaporation material obtained by the evaporation source, and flowing from the guide path A discharge member that discharges the evaporation material to the vapor deposition member, and the discharge member protrudes toward the vapor deposition member and discharges the vaporization material to the vapor deposition member. The present invention relates to a method using a vacuum vapor deposition apparatus having a plurality of nozzle members having a diaphragm opening at a tip thereof.
And the nozzle member used with the said vacuum evaporation system of this invention is used for each nozzle member. Furthermore, the flow rate of the evaporating material in each nozzle member is adjusted by means for adjusting the flow rate of the evaporating material in each nozzle member in the vacuum vapor deposition apparatus of the present invention.

  This makes it possible to easily and accurately adjust the amount and the degree of expansion of the evaporating material released from the throttle openings of the plurality of nozzle members provided in the dispersion container toward the deposition target member. As a result, the thickness uniformity of the entire film formed by depositing the evaporation material on the surface of the vapor deposition member can be greatly increased.

The flow rate of the evaporating material is preferably adjusted based on a measurement result obtained by measuring the amount of evaporating material released from each nozzle member. Thereby, it can be adjusted to a predetermined flow rate obtained in advance by simulation of the film thickness distribution.
The amount of the evaporation material is preferably measured based on a measurement result obtained by measuring the thickness of the deposited film formed immediately above the outlet (throttle opening) of the nozzle member. By measuring the thickness of the deposited film with a film thickness detecting means such as a crystal oscillator type film thickness detecting sensor, the amount of the evaporated material released from the nozzle member can be easily obtained.

Here, an embodiment of the vacuum deposition apparatus of the present invention will be described with reference to FIGS.
As shown in FIG. 5, the vacuum evaporation apparatus 1 transfers a crucible 3 as an evaporation source for heating an evaporation material 2 for forming an organic EL film to obtain an evaporation material, and an evaporation material obtained by the crucible 3. And a discharge member 6 that discharges the evaporating material flowing in from the guide path 4 to a substrate 5 as a member to be deposited. The discharge member 6 includes a cylindrical manifold 7 as a dispersion container for diffusing the evaporation material, and a plurality of nozzle members 8 protruding toward the substrate 5.

  The apparatus 1 also releases a substrate holder 5 a for holding the substrate 5, a heater 10 as a means for heating the crucible 3 containing the vapor deposition material 2, and the evaporation material from each nozzle member 8 to the substrate 5. A shutter 11 as means for opening and closing the path, and a film thickness detection sensor 12 as means for measuring the thickness of the deposited film (manufactured organic EL film) formed on the surface of the substrate 5 are provided. The above-described various constituent members constituting the device 1 are accommodated in the evaporation container 9. The apparatus 1 is connected to deaeration means for making the inside of the evaporation container 9 into a vacuum state. For example, a vacuum pump is used as the deaeration means.

  As shown in FIG. 6, the plurality of nozzle members 8 are arranged in a line at equal intervals along the axial direction of the columnar manifold 7. Each nozzle member 8 has a throttle opening 8a for discharging the evaporation material to the substrate 5 at the tip thereof. The plurality of nozzle members 8 have substantially the same shape and dimensions. Each nozzle member 8 has a substantially cylindrical shape, and the aperture 8a has a substantially circular shape. Each nozzle member 8 has an inner diameter D of the nozzle member 8, a length L of the nozzle member 8, and a diameter D 'of the aperture opening 8a.

The inner diameter D (mm) of the nozzle member 8, the length L (mm) of the nozzle member 8, and the diameter D ′ (mm) of the aperture 8 a are expressed by the relational expression (1):
L ≧ 9D and D ′ ≦ 2.7D ² / L, or L <9D and D ′ ≦ D / 3
Meet.

  The discharge member 6 includes a needle valve 13 having a substantially conical tip as a means for adjusting the flow rate of the evaporation material in each nozzle member 8 so that the flow rate of the evaporation material in each nozzle member 8 becomes a predetermined value. More specifically, the needle valve 13 is installed in each of the plurality of nozzle members 8 and is arranged in the vicinity of the opening of the base portion of each nozzle member 8 on the dispersion container 7 side so that the degree of opening can be adjusted. By arranging in this way, the flow rate of the evaporation material supplied from the manifold 7 to the inside of each nozzle member 8 can be adjusted with high accuracy. As a result, it is possible to accurately adjust the amount of the evaporation material released from the aperture opening 8a without changing the diameter of the aperture opening 8a.

  In the apparatus shown in FIGS. 5 and 6, when confirming whether the flow rate of each nozzle member 8 is adjusted to a value based on simulation, for example, as shown in FIG. 7, the outlet (throttle opening 8a) of each nozzle member 8 is used. The crystal oscillator type film thickness detection sensor 14 as the film thickness detection means may be installed immediately above. At this time, an isolation wall 15 for isolating each nozzle member 8 is provided so as not to be affected by the evaporation material discharged from the adjacent nozzle member 8. The film thickness detection sensor 14 and the isolation wall 15 are installed when the film thickness is detected, and are removed during actual use.

A specific example of a vacuum deposition method using the vacuum deposition apparatus of the present embodiment is shown below.
The crucible 3 and the guide path 4 are arranged at the center of the manifold 7 using the vacuum deposition apparatus shown in FIGS. The length L of each nozzle member 8 is 30 mm, the inner diameter D of each nozzle member 8 is 7 mm, and the diameter D ′ of the aperture 8 a is 2 mm. The interval between the aperture opening 8a of the nozzle member 8 and the substrate 5 (size 100 mm × 100 mm) is set to 50 mm. In the discharge member 6, 16 nozzle members 8 are arranged at a predetermined interval.
In advance, the film thickness distribution is simulated so that the vapor deposition rate is 1.0% / sec or less at a deposition rate of 1.0 kg / sec, and an appropriate discharge amount of the evaporation material from each nozzle member 8 is obtained.

The simulation of the film thickness distribution is performed by the following procedure, for example.
The evaporation material discharged from one nozzle diffuses along the cos ⁿ θ law. The amount of the evaporation material adhering to the substrate by such diffusion, that is, the film thickness distribution formed on the surface of the substrate by the evaporation material released from one nozzle is obtained. The film thickness distribution is obtained by calculation using, for example, a known method (for example, a new edition vacuum handbook, ULVAC, Inc., page 250).
The adhesion amount (film thickness distribution) of the evaporation material is obtained for each nozzle. The amount of evaporation material that reaches the substrate from each nozzle is integrated in each part of the substrate. The maximum value and the minimum value of the integral value of the amount of deposition of the evaporation material in each part of the substrate are obtained, and the film thickness uniformity is obtained by the following equation.
Film thickness uniformity (%) = (maximum value−minimum value) / (maximum value + minimum value) × 100
Then, the amount of evaporated material released from each nozzle is changed little by little to determine the amount of evaporated material released so that the film thickness uniformity is ± 3% or less.

A crystal oscillator type film thickness detection sensor 14 is installed immediately above the outlet (aperture opening 8 a) of the nozzle member 8, and a separator plate 15 for isolating each nozzle member 8 is installed.
Next, tris (8-quinolinolato) aluminum (hereinafter referred to as Alq3) is put into the crucible 3 of the vacuum vapor deposition apparatus 1 as a vapor deposition material. The amount of evaporation material discharged from each nozzle member 8 is measured by the film thickness detection sensor 14. Based on the measurement result, the needle valve 13 provided at the opening near the base of the nozzle member 8 on the dispersion container side is adjusted so that the predetermined flow rate obtained by the simulation is obtained.
The crystal oscillator type film thickness detection sensor 14 is removed. Thereafter, an Alq3 vapor deposition film is formed on the substrate 5 at a vapor deposition rate of 1.0 kg / sec. At this time, the film thickness uniformity of the deposited film can be maintained within ± 3%.

In the present embodiment, the shape of the manifold 7 is a columnar shape, but the shape of the manifold 7 is not limited to this. For example, it may be an elliptical column shape or a substantially polygonal column shape such as a substantially quadrangular column.
In the present embodiment, the plurality of nozzle members 8 are arranged in a line at equal intervals, but the arrangement form of the plurality of nozzle members 8 is not limited to this. For example, a plurality of the rows may be arranged in parallel.

In the present embodiment, the needle valve 13 is used as a means for adjusting the flow rate of the evaporation material in each nozzle member 8, but instead of the needle valve 13, as shown in FIG. May be. The opening degree of the nozzle member 8 is adjusted by rotating the rotating shaft 23 a connected to the end of the shielding plate 23 and sliding the shielding plate 23.
Further, although the disk-shaped shielding plate 23 is used in FIG. 8, the shape of the shielding plate 23 may be other than the disk shape as long as the opening degree of the nozzle member 8 can be adjusted.

DESCRIPTION OF SYMBOLS 1 Vacuum evaporation apparatus 2 Evaporating material 3 Crucible 4 Guide path 5 Substrate 5a Substrate holder 6 Ejection member 7 Manifold 8 Nozzle member 8a Aperture opening 9 Evaporating container 10 Heater 11 Shutter 12 Film thickness detection sensor 13 Needle valve 14 Film thickness detection sensor 15 Isolation wall 23 Shielding plate 23a Rotating shaft

Claims (2)

An evaporation source for heating an evaporation material for forming an organic EL film to obtain an evaporation material;
A guide path for transferring the evaporation material obtained by the evaporation source;
A discharge member that discharges the evaporation material flowing in from the guide path to the deposition target member, and
The release member is
A dispersion vessel for diffusing the evaporating material;
A plurality of nozzle members protruding toward the vapor deposition member and having a throttle opening at the tip for releasing the evaporation material to the vapor deposition member,
Each nozzle member has an inner diameter D (mm) of the nozzle member, a length L (mm) of the space portion of the nozzle member, and a diameter D ′ (mm) of the aperture opening,
The inner diameter D (mm) of the nozzle member, the length L (mm) of the space portion of the nozzle member, and the diameter D ′ (mm) of the diaphragm opening are expressed by a relational expression:
L ≧ 9D and D ′ ≦ 2.7D ² / L , or L <9D and D ′ ≦ D / 3
The filling,
The discharge member has means for adjusting the flow rate of the evaporation material by adjusting the degree of opening at the opening of the base of each nozzle member so that the flow rate of the evaporation material in each nozzle member becomes a predetermined value. Vacuum deposition equipment. An evaporation source for heating an evaporation material for forming an organic EL film to obtain an evaporation material;
A guide path for transferring the evaporation material obtained by the evaporation source;
A discharge member that discharges the evaporation material flowing in from the guide path to the deposition target member, and
The release member is
A dispersion vessel for diffusing the evaporating material;
A vacuum vapor deposition method using a vacuum vapor deposition apparatus that has a plurality of nozzle members that protrude from the vapor deposition member and have a throttle opening at the tip for discharging vaporized material to the vapor deposition member. ,
Each nozzle member has an inner diameter D (mm) of the nozzle member, a length L (mm) of the inner space of the nozzle member, and a diameter D ′ (mm) of the aperture opening, and the inner diameter D of the nozzle member (Mm), the length L (mm) of the internal space of the nozzle member, and the diameter D ′ (mm) of the diaphragm opening are expressed by the relational expression:
L ≧ 9D and D ′ ≦ 2.7D ² / L , or L <9D and D ′ ≦ D / 3
And the flow rate of the evaporation material is adjusted by adjusting the degree of opening at the opening of the base of each nozzle member so that the flow rate of the evaporation material at each nozzle member becomes a predetermined value. Vacuum deposition method.

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