JP4458932B2 - Vapor deposition equipment - Google Patents

Description

  The present invention relates to a vapor deposition apparatus for manufacturing an image display unit such as an organic EL display.

In recent years, thinning of displays has progressed, and as this type of display, liquid crystal displays have been put to practical use.
This liquid crystal screen requires a backlight and has difficulties in view range, power consumption, etc. Recently, a self-luminous organic EL display has been attracting attention.

  By the way, the basic structure of the organic EL display is an arrangement in which an anode (transparent electrode) is arranged on a glass substrate, a hole transport layer and a light emitting layer are arranged in this order, and a cathode is further arranged. At least for the light emitting layer, an organic material is formed by vapor deposition.

  When a thin film is formed on the substrate by vapor deposition, an organic material evaporation source is placed in the vacuum vessel, the evaporation source is heated in a vacuum state, and the vapor is also placed in the vacuum vessel. A thin film was formed by adhering to the surface.

By the way, when vapor-depositing an organic material, a trace component may be mixed with a main component, and it is necessary to vapor-deposit two different materials on a glass substrate in a different ratio and uniformly.
Examples of apparatuses and methods for depositing such different materials include the following.

  That is, as shown in Patent Document 1, there is one in which two cells are arranged in a lower position facing a member to be vapor-deposited in a vacuum chamber and the evaporation material is discharged from each discharge hole.

  Further, as shown in Patent Document 2, the evaporation material generated in a separately provided evaporation source is led to the discharge part through a valve and a transfer part, and is vapor-deposited on the deposition target substrate from a number of discharge holes. There is something that was made.

Furthermore, as shown in Patent Document 3, evaporating materials evaporated in crucibles provided separately are led from the inflow port to the mixing chamber, and the evaporating materials mixed here are formed into the film formation objects through the discharge holes. There is something that was made to vapor-deposit.
JP 2003-297565 A JP2002-30418 JP2003-155555A

  By the way, it is known that the film thickness of the evaporation material deposited on the member to be vapor-deposited shows a distribution according to a so-called cosine law. However, as shown in Patent Document 1, a different material is put in another cell chamber. When vapor deposition is attempted at the same time, the positions of the discharge holes are separated from each other, and therefore the film thickness distribution positions according to the respective cosine rules are different. Therefore, since the component amount ratio of different kinds of materials deposited on the surface of the member to be deposited is not constant, it cannot be said that the quality is constant.

  Furthermore, for the discharge hole, although depending on the distance to the vapor deposition member, there are cases where the direction of the evaporation material cannot be regarded as the same, and when a pattern is formed on the surface of the vapor deposition member using a mask, Even if the same pattern is affected by the thickness of the mask, the component amount ratio becomes more uneven as it is closer to the mask.

  More specifically, when the pattern is a thin wiring such as a circuit, among the mask portions on both sides in the wiring width direction, the portion close to the discharge hole is behind the mask, so the deposition thickness becomes insufficient. Therefore, if the positions of the discharge holes of different materials are separated from each other, the component amount ratios of the different materials are significantly different in the width direction on the wiring forming the pattern.

  In order to improve this, that is, to keep the component ratio constant and to make the film thickness distribution more constant, it is necessary to provide a sufficient distance from the member to be deposited. Not only does it take a long time to increase the pressure, but a lot of evaporation material adheres to the surface other than the member to be deposited. That is, the utilization efficiency of the vapor deposition material is lowered, and this takes a long time to obtain a predetermined film thickness. In summary, instead of improving the uniformity of the component amount ratio and the film thickness distribution, the preparation time (decompression time) for vapor deposition, the material utilization efficiency, and the film formation speed are sacrificed.

  In view of these points, it is possible to discharge from the same position as shown in Patent Document 2 and Patent Document 3, rather than the one shown in Patent Document 1 where the discharge holes of different materials are located far away from each other. Is preferable.

  In particular, as shown in Patent Document 2, the distance between the vapor deposition member and the discharge hole can be shortened by discharging the mixed evaporation material from many discharge holes spaced apart from each other. The point sacrificed in Patent Document 1 can be improved.

However, as shown in Patent Document 2 and Patent Document 3, when different evaporating materials are released after being mixed, it is difficult to handle dissimilar materials having different temperature differences.
This is true for materials with low stability, such as organic materials used when manufacturing the display part of an organic EL display. However, the decomposition temperature differs between different materials and decomposes to lose its performance. This is due to the difference in temperature (higher than the evaporation temperature). The heating in each crucible only needs to be set to the evaporation temperature of the stored material or more and less than the decomposition temperature, so there are relatively few restrictions, but it is located between the crucible and the discharge hole to the vapor deposition member. And in the part where both evaporation materials are mixed, it is kept above the evaporation temperature of all the materials to be mixed and below the decomposition temperature of the materials to be mixed. Since it becomes necessary to prevent the deterioration, the restriction becomes larger than in the case of heating individually in a crucible.

  Some products such as organic EL displays are on the market, but it is not an established field. Especially, what kind of materials may appear in the future, and there are restrictions due to evaporation temperature and decomposition temperature. A configuration in which the apparatus receives a large amount is not desirable.

  Also, if different materials are mixed before the evaporation material is discharged from the discharge hole, the discharge amount cannot be detected individually, and can it be deposited on the deposition target member at the planned component amount ratio? There is a problem that you will not understand. That is, it becomes difficult to control the release amount for each material and maintain the substrate quality constant.

  Therefore, the first object of the vapor deposition apparatus of the present invention is to be able to individually control the temperature of the discharge amount of different materials and to make the ratio of the component amounts of the film thickness formed on the vapor deposition member substantially uniform. A second object is to be able to individually detect the amount of material released.

In order to solve the above-mentioned problem, a vapor deposition apparatus according to claim 1 of the present invention is a vapor deposition apparatus for vapor-depositing an evaporation material on a vapor-deposited member held in a vapor deposition vessel,
The first and second discharge containers, which are disposed in the vapor deposition container and are disposed one above the other and discharge the first and second vapor deposition materials, are different from each other. First and second evaporation containers for heating and evaporating the first and second vapor deposition materials, and the first and second evaporation materials evaporated in the respective evaporation containers are supplied to the first and second discharge containers. Comprising first and second evaporating material guide pipes, respectively leading;
A plurality of discharge holes for the first evaporation material are formed at predetermined intervals on the upper surface of the first discharge container disposed above, and the discharge holes for the second evaporation material are formed on the upper surface of the second discharge container. The discharge nozzles having the upper ends thereof are located in the discharge holes of the first discharge container and are concentrically provided .

Further, vapor deposition apparatus according to claim 2, in which the opening area of each evaporation material in the release holes for put that wood charge release to the deposition apparatus of claim 1, was determined according to the type of evaporation material .

Further, the vapor deposition apparatus according to claim 3 is provided with a heating means for heating each evaporation material induction tube and each discharge container in the vapor deposition apparatus according to claim 1 or 2 ,
A heat reducing member or a heat insulating member for preventing heat from being transferred between the insertion portion of the discharge nozzle into the first discharge container and the evaporation material in the diffusion space in the first discharge container is used for the first discharge. It is attached to the container side .

Further, the vapor deposition apparatus according to claim 4 is a discharge amount for detecting the discharge amount of the evaporation material at a position different from each discharge hole for material discharge in the vapor deposition apparatus according to any one of claims 1 to 3. Each of the detection holes is provided, and at a position corresponding to each of the discharge amount detection holes , a discharge amount detection means for detecting the discharge amount of the evaporated material discharged from the detection holes is provided,
Furthermore, a discharge amount ratio detection means is provided for inputting a detection signal from the discharge amount detection means to obtain the ratio of the discharge amount of each evaporation material.

Furthermore, the vapor deposition apparatus according to claim 5 is provided with a discharge amount adjusting means for adjusting the discharge amount of the evaporation material in the middle of each evaporation material guide tube in the vapor deposition apparatus according to claim 4, and the discharge amount of each evaporation material. The discharge amount adjusting means is controlled by the discharge amount ratio detecting means for obtaining the ratio.

According to the above configuration, the first and second discharge containers for guiding and releasing the first and second evaporation materials evaporated by the two vapor deposition sources are vertically arranged in the vapor deposition container, and upward. A discharge nozzle having a plurality of discharge holes for the first evaporating material formed at predetermined intervals on the upper surface of the first discharge container disposed, and having a discharge hole for the second evaporating material on the upper surface of the second discharge container. Since the upper ends thereof are located in the respective discharge holes in the first discharge container and are concentrically projected , for example, different types of evaporating materials can be used as compared with those in which the discharge holes are arranged at different locations. It is possible to deposit on the surface of the member to be vapor-deposited in as uniform a coexistence state as possible, and when the emission holes are arranged at different positions, the vaporized material from both emission holes will be mixed as uniformly as possible. , Evaporation target A relative discharge hole distance there must be increased with, since it is possible to approximate the discharge hole and the deposited member, leading to miniaturization of the vapor deposition apparatus.

  In addition, since a diffusion member having a diffusion space is provided at the tip of each evaporation material guiding path, and an opening for discharging the evaporation material is provided in the diffusion member, even when the openings are arranged at a plurality of locations. Since the evaporation material is diffused and made uniform in the diffusion space, the amount of the evaporation material released from each opening is an amount corresponding to each opening area, and thus the emission amount can be easily and accurately controlled. Can be done.

  In addition, the discharge amount detection opening is provided at a position different from the material discharge opening, and the discharge amount ratio detecting means for determining the ratio of the discharge amount of each evaporation material is provided. Therefore, the film formation state can be monitored.

  Moreover, about each evaporation material induction path, since the heat-reduction member or the heat insulation member was arrange | positioned in the part to which the heating means which heats each, and both induction paths approach, both are in the thermally independent state. Even when the temperature characteristics of the respective vapor deposition materials are different, the respective temperature management can be performed optimally, and therefore the quality of the vapor deposition film is not impaired.

  Further, a discharge amount adjusting means for adjusting the discharge amount of the evaporation material is provided in the middle of each evaporation material guiding path, and the discharge amount adjusting means is controlled based on the ratio of the discharge amount inputted from the discharge amount ratio detection means. Therefore, even if the evaporation material is from a different evaporation source, the evaporation material can always be released at a predetermined ratio, so that the temperature control of the evaporation source is facilitated.

[Embodiment]
Hereinafter, the vapor deposition apparatus which concerns on embodiment of this invention is demonstrated based on FIGS.
In this embodiment, when manufacturing a display unit of an organic EL display, that is, when an organic material is vapor-deposited on the surface of a glass substrate, and when two different kinds of vapor deposition materials (which are organic materials) are vapor-deposited. explain. Of the different vapor deposition materials, the main component material is referred to as a first vapor deposition material (also referred to as a host), the trace material is referred to as a second vapor deposition material (also referred to as a dopant), and each vapor deposition material is further heated. The evaporated material will be referred to as first and second evaporation materials.

  In this vapor deposition apparatus, as shown in FIG. 1, a glass substrate (vapor deposition member) 1 is inserted in a horizontal direction so that its vapor deposition surface is downward, and is held by a holder 2 (vapor deposition). (Also referred to as a chamber) 3 and the first and second discharge chambers for releasing the evaporation material formed by evaporating the first and second vapor deposition materials A and B at the lower part of the vapor deposition container 3 and above and below each other. Two first and second evaporations for heating and evaporating the containers (one example of the diffusion member) 4 and 5 and the first and second vapor deposition materials disposed outside the vapor deposition container 3 and having different types from each other Containers (also referred to as evaporation sources or evaporation chambers) 6, 7, and evaporation materials evaporated in the respective evaporation containers 6, 7 are guided to discharge containers 4, 5 disposed in the evaporation container 3. 1 and 2 evaporating material guide pipes (an example of evaporating material guiding paths, Are also part of the evaporating material guiding path) 8, 9 and the amount of evaporating material released and the thickness of the evaporating film formed on the surface of the glass substrate 1 (hereinafter referred to as film thickness). It is comprised from the monitoring control apparatus 10 which monitors a state.

Next, the discharge containers 4 and 5 will be described.
Each of these discharge containers 4 and 5 has a predetermined thickness and a rectangular shape in plan view (of course, it may be circular or polygonal), and each has a diffusion space (also referred to as a buffer space, evaporating material). In a box-like container having 4a and 5a.

The first discharge container 4 that discharges the first evaporation material A is disposed above, and the second discharge container 5 that discharges the second evaporation material B is disposed below.
As shown in FIGS. 2 to 4, a plurality of first evaporation material discharge holes (openings) 4 b are formed on the upper surface of the first discharge container 4 at predetermined intervals, for example, in a plurality of rows vertically and horizontally. At the same time, a discharge nozzle 5c having a discharge hole (opening) 5b for the second evaporation material is located in the discharge hole 4b of the first discharge container 4 on the upper surface of the second discharge container 5. A plurality of protrusions are provided.

  More specifically, as shown in FIGS. 5 and 6, the discharge hole 4 b formed on the surface of the first discharge container 4 is formed into a circular opening and the second discharge container 5. The discharge nozzle 5c projecting from the upper surface penetrates the bottom wall of the first discharge container 4 and the discharge hole 5b at the tip thereof is the center (concentric position) of the discharge hole 4b of the first discharge container 4. Moreover, it is provided so as to be flush with the discharge hole 4b. Of course, the ratio of the opening area for discharge in both of the discharge holes 4b and 5b (that is, the ratio of the annular opening area of the discharge hole 4b to the circular opening area of the discharge hole 5b) is naturally determined between the two constituting the film. It is determined according to the component ratio.

  Further, as shown in FIG. 1, the discharge amount detection for detecting (measuring) the discharge amount of the evaporation material discharged from each discharge container 4, 5 is provided on the edge side of each discharge container 4, 5. Holes (opening amount detection openings) 4c and 5d are formed, and separators 11 and 12 are provided for detecting only the discharge amount from the discharge amount detection holes 4c and 5d, respectively. ing.

  The first evaporating material guiding tube 8 is for guiding the first evaporating material A evaporated in the first evaporating vessel 6 to the first discharging vessel 4, and the second evaporating material guiding tube 9 is the second evaporating material guiding tube 9. The second evaporating material B evaporated in the evaporating container 7 is guided to the second releasing container 5, and the transfer amount of the evaporating material, that is, the releasing amount is adjusted and opened and closed in the middle of each. Flow rate control valves (an example of a discharge amount adjusting means, which may be, for example, an opening / closing valve having an opening adjusting function) 13 and 14 are provided.

  Further, as shown in FIGS. 2 and 3, as a heating means (also referred to as a heat retaining means) for keeping the temperature over substantially the entire surface of each of the discharge containers 4 and 5 and each of the evaporation material guide pipes 8 and 9. For example, a sheath heater 15 is arranged, and each evaporation material is considered to be maintained (maintained) at an optimum temperature (in FIGS. 2 and 3, the discharge containers 4 and 5 are provided). Only illustrated).

  Similarly, the discharge nozzle 4c is also provided with a sheath heater 15 as shown in FIG. 3, and the insertion portion of the discharge nozzle 5c into the first discharge container 4 and the diffusion space 4a of the first discharge container 4 are also provided. In order to prevent heat above the other decomposition temperature from being transmitted to the evaporation material in the inside, a cylindrical heat reducing material (an example of a heat reducing member or a cylindrical heat insulating material (an example of a heat insulating member) may be used) 16 is attached to the first discharge container 4 side.

  Furthermore, if there is a part where heat is transmitted between the two evaporation materials in the part other than the discharge nozzle 5c, a heat reducing material (or a heat insulating material) is provided also in that part, and the optimum temperature of each evaporation material is set. Is retained.

  Although not shown, each of the evaporation containers 6 and 7 is provided with a material storage container for storing a vapor deposition material, and heating for evaporating the vapor deposition material by heating each of the material storage containers. Means (for example, an electric heater is used) are arranged, and the air in the container can be discharged individually (vacuumable).

Next, the monitoring control device 10 will be described.
As shown in FIG. 1, the monitoring and control device 10 detects the discharge amount of the evaporated material discharged from the discharge amount detection holes 4c and 5d formed at the edge of the surface of each discharge container 4 and 5. In order to detect the film thickness to which the evaporative material adheres by being disposed at a position immediately adjacent to the glass substrate 1 and the obtained release amount detection sensors (also referred to as discharge amount measuring means, which is an example of the discharge amount detecting means). Film thickness detection sensor 23, a discharge amount ratio detecting means 24 for inputting a detection signal from both of the discharge amount detection sensors 21 and 22, and obtaining a ratio of the discharge amounts of both evaporation materials, and the film thickness A film thickness detection means 25 for obtaining a film thickness deposited on the glass substrate 1 by inputting a detection signal from the detection sensor 23, and a detection value (measurement value) from the emission amount ratio detection means 24 and the film thickness detection means 25. Are installed in each evaporative material guide tube 8 and 9. The opening degree adjusting means 26 for adjusting the opening degree of the flow rate control valves 13 and 14 and the detected values from the discharge amount ratio detecting means 24 and the film thickness detecting means 25 are inputted, and the discharge amount ratio and the film thickness are set. And a monitor 27 (an example of output means, which may be a printer, for example). In addition, as each said detection sensors 21-23, what utilized the crystal oscillator, for example is used.

In the above configuration, a case where two kinds of vapor deposition materials, that is, a host and a dopant are vapor-deposited on the glass substrate 1 will be described.
That is, the first evaporation container 4 and the second evaporation container 5 are each heated to a predetermined temperature to evaporate the host as the first vapor deposition material and the dopant as the second vapor deposition material, respectively. , 9 are led to diffusion spaces 4a, 5a in the first discharge container 4 and the second discharge container 5. At this time, the evaporating material guide tubes 8 and 9 and the discharge containers 4 and 5 are respectively held at optimum temperatures by the sheath heater 15. In addition, the inside of the vapor deposition container 3 for vapor-depositing the evaporation material on the glass substrate 1, the containers 4 to 7, and the induction tubes 8 and 9 are set to a predetermined degree of vacuum.

  Then, the host A is discharged from the discharge hole 4b of the first discharge container 4 and the dopant is discharged from the discharge hole 5b at the tip of the discharge nozzle 5c of the second discharge container 5 arranged at the center thereof. The evaporation material adheres to the surface of the glass substrate 1 in a uniform mixed state, and an organic material film is formed.

  At the time of forming the film, detection signals from the detection sensors 21 and 22 are input to the emission amount detection unit 24 to obtain the emission amount ratio of the host and the dopant, and the emission amount ratio is determined by the opening degree adjustment unit. 26, and a control signal is output to each of the flow control valves 13, 14 so that the discharge ratio is maintained at a predetermined value.

  In addition, when a detection signal from the film thickness detection sensor 23 is input to the film thickness detection means 25 and the film thickness formed on the surface of the glass substrate 1 is obtained, and when a predetermined film thickness is reached, A closing signal is output from the opening degree adjusting means 26 to both flow rate control valves 13 and 14, and the emission of the host and the dopant is stopped.

Of course, when the film is formed, the ratio of the emission amount of the host and the dopant and the film thickness formed on the surface of the glass substrate 1 are displayed on the monitor 27.
As described above, the two evaporation materials discharging containers 4 and 5 are disposed in the vapor deposition container 3, and the discharge holes 4b and 5b for discharging the evaporation materials are disposed concentrically. Can be vapor-deposited on the surface of the glass substrate 1 in as uniform a coexistence state as possible.

  For example, when both the discharge holes 4b and 5b are arranged at different positions and when both evaporation materials are to be mixed as uniformly as possible, it is necessary to increase the distance between the discharge holes and the glass substrate. On the other hand, according to the configuration of the above-described embodiment, since the discharge hole and the glass substrate can be brought close to each other, the vapor deposition apparatus can be downsized.

  Further, for each of the evaporative material guide tubes 8 and 9, a heat reducing material (for example, a sheath heater 15 for heating each of the evaporative material guide tubes 8 and 9 and a portion where both the evaporative material guide tubes 8 and 9 (more precisely, the evaporative material guide paths) approach each other. 16) are arranged so that they are in a thermally independent state, so that even when the temperature characteristics of the respective vapor deposition materials are different, the respective temperature management can be optimally performed. There is no loss of film quality.

  Further, flow control valves 13 and 14 for adjusting the amount of evaporating material released are provided in the middle of each evaporating material guide pipe 8 and 9, and the flow rate control valves 13 and 14 are discharged from the discharge amount ratio detecting means 24. Since the amount is controlled based on the ratio of the amounts, the evaporation material from the different evaporation containers 6 and 7 can always be discharged at a predetermined ratio. 7 is easy to manage the temperature.

  Further, by disposing the discharge containers 4 and 5 having the diffusion spaces 4a and 5a in the vapor deposition container 3, the cross-sectional area thereof is more sufficient than the evaporation material guide pipes 8 and 9 from the evaporation containers 6 and 7. By providing a large space, even when the discharge holes are provided at a plurality of locations, the distribution of the evaporation material is made uniform in the diffusion spaces 4a and 5a. Therefore, the evaporation material discharged from the discharge holes 4b and 5b, respectively. The amount of released gas is an amount corresponding to the opening area of each of the discharge holes 4b and 5b, and the amount of discharged gas can be controlled easily and accurately.

  Furthermore, since the discharge amount detection holes 4c and 5d are provided separately from the film formation discharge holes 4b and 5b, the area may be sufficiently smaller than the opening area of the discharge holes 4b and 5b. Release of the evaporation material for detecting the release amount that does not contribute to film formation can be minimized.

  In the above embodiment, the discharge holes 4b and 5b provided on the surfaces of the discharge containers 4 and 5 are arranged vertically and horizontally, that is, two-dimensionally. For example, they are arranged in one row (one-dimensionally). May be.

  In the above embodiment, the discharge holes 4b and 5b are described as two-dimensionally provided on the surface of the box-shaped container. However, for example, as shown in FIG. , 9 may be used, and the discharge holes 8a, 9a (corresponding to 4b, 5b) may be arranged concentrically.

  In this case, the evaporating material guide pipes 8 and 9 of the evaporating materials need to have a double pipe structure from the middle, but the range of the double pipe structure is as close to the discharge holes 8a and 9a as possible. Is preferred. For example, if the part of the double tube structure is long, the structure becomes complicated and the part of the heat insulating structure becomes long, and the manufacturing cost as a whole becomes high. That is, as the evaporating material guiding pipe (evaporating material guiding path), the evaporating material guiding pipe is provided as close as possible to the vicinity of the discharging hole (discharging part), and in the vicinity of the discharging hole, one evaporating material guiding pipe is connected to the other evaporating material guiding pipe Is preferably inserted.

  Further, in the above embodiment, the separator is arranged in the vicinity of each discharge amount detection hole, but instead of the separator, a tubular guide member for deriving only the evaporation material from each discharge amount detection hole is arranged. May be. In addition, when the evaporation material discharged from each of the discharge amount detection holes does not quantitatively affect the evaporation material discharged from the other discharge holes, it is not necessary to provide a separator or a guide member.

  Further, in the above-described embodiment, the first and second evaporation containers 6 and 7 are disposed outside the evaporation container 3, but the evaporation containers 6 and 7 are connected to the evaporation material guide tubes 8 and 9, respectively. You may arrange | position in the container 3 for vapor deposition.

It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on embodiment of this invention. It is a principal part perspective view in the vapor deposition apparatus. It is CC sectional drawing of FIG. It is a perspective view of the 2nd discharge container of the vapor deposition apparatus. It is principal part sectional drawing of the container for discharge | emission of the vapor deposition apparatus. It is DD sectional drawing of FIG. It is a perspective view which shows the modification of the container for discharge | emission of the vapor deposition apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Glass substrate 3 Vapor deposition container 4 1st discharge | emission container 4a Diffusion space 4b Emission hole 4c Emission amount detection hole 5 2nd emission container 5a Diffusion space 5b Emission hole 5c Emission nozzle 5d Emission amount detection hole 6 1st Evaporation container 7 Second Evaporation Container 8 First Evaporation Material Guide Tube 9 Second Evaporation Material Guide Tube 10 Monitoring Controller 11 Separation Plate 12 Separation Plate 13 Flow Control Valve 14 Flow Control Valve 15 Sheath Heater 16 Cylindrical Heat Reduction Material 21 Release Amount Detection Sensor 22 Release amount detection sensor 23 Film thickness detection sensor 24 Release amount ratio detection means 25 Film thickness detection means 26 Opening adjustment means 27 Monitor

Claims (5)

A vapor deposition apparatus for vapor-depositing an evaporation material on a member to be vapor-deposited held in a vapor deposition container,
The first and second discharge containers, which are disposed in the vapor deposition container and are disposed one above the other and discharge the first and second vapor deposition materials, are different from each other. First and second evaporation containers for heating and evaporating the first and second vapor deposition materials, and the first and second evaporation materials evaporated in the respective evaporation containers are supplied to the first and second discharge containers. Comprising first and second evaporating material guide pipes, respectively leading;
A plurality of discharge holes for the first evaporation material are formed at predetermined intervals on the upper surface of the first discharge container disposed above, and the discharge holes for the second evaporation material are formed on the upper surface of the second discharge container. A vapor deposition apparatus characterized in that a discharge nozzle having a plurality of discharge nozzles is concentrically provided so that an upper end thereof is positioned in each discharge hole in the first discharge container . The vapor deposition apparatus according to claim 1 , wherein an opening area of each evaporation material in the discharge hole for material release is determined according to a type of the evaporation material. While providing heating means for heating each evaporating material induction tube and each discharge container ,
A heat reducing member or a heat insulating member for preventing heat from being transferred between the insertion portion of the discharge nozzle into the first discharge container and the evaporation material in the diffusion space in the first discharge container is used for the first discharge. vapor deposition apparatus according to claim 1 or 2, characterized in that attached to the container side. A position different from the respective discharge holes for material release, the release amount detection hole for detecting the emission amount of the evaporation material provided with respectively, at positions corresponding to the respective emission detection hole is released from the detection hole Provided with a discharge amount detecting means for detecting the discharge amount of the evaporation material
Further deposition apparatus according to any one of claims 1 to 3, characterized in that the provided emission ratio detection means for entering a detection signal determining the ratio of the emission of the evaporation material from said emission detector . A discharge amount adjusting means for adjusting the discharge amount of the evaporating material is provided in the middle of each evaporating material guide tube , and the discharge amount adjusting means is controlled by a discharge amount ratio detecting means for obtaining a ratio of the discharge amount of each evaporating material. The vapor deposition apparatus according to claim 4 , wherein the vapor deposition apparatus is formed.

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