JP2006111926A - Vapor deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition system capable of measuring the amount of a vapor deposition material to be released over a long period even in the vicinity of a release port for the evaporation material where the release concentration of the evaporation material is high. <P>SOLUTION: The vapor deposition system is provided with: a thermocouple 21a (21b) provided at the edge part of a hole part 4a (5c) for discharging an evaporation material; and a monitoring controller 11 of calculating a temperature deviation between a heating set temperature in a vessel 4 (5) for release and a measured temperature detected by the thermocouple 21a (21b), and, based on the temperature deviation, the release rate, i.e., the proportion of the evaporation material to be released is obtained. Thus, differently from the case where a film thickness gauge on which the evaporation material is deposited is installed at a place in which the release concentration of the evaporation material is extremely high, and the proportion to be released is detected as shown in the conventional quartz resonator type, there is no problem on the deposition of the evaporation material and continuous use over a long period is possible, thus the reduction in the working ratio of the vapor deposition system can be prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an apparatus for depositing evaporated material on a member to be deposited, and relates to a technique applicable to, for example, a deposition apparatus for manufacturing an image display unit such as an organic EL display.

  In recent years, thinning of displays has progressed, and as this type of display, liquid crystal displays have been put to practical use. This liquid crystal screen requires a backlight and has difficulties in view range, power consumption, etc. Recently, a self-luminous organic EL display has been attracting attention.

  By the way, the basic structure of the organic EL display is an arrangement in which an anode (transparent electrode) is arranged on a glass substrate, a hole transport layer and a light emitting layer are arranged in this order, and a cathode is further arranged. At least for the light emitting layer, an organic material is formed by vapor deposition.

  When a thin film is formed on a substrate by vapor deposition, an organic material evaporation source is placed in a vacuum vessel, the evaporation source is heated in a vacuum state, and the vapor (hereinafter referred to as evaporation material) is vacuumed. The thin film was formed by making it adhere to the surface of the board | substrate arrange | positioned in a container.

  By the way, in the above-described vapor deposition apparatus, a film thickness meter for detecting and monitoring the film thickness of the vapor deposited film deposited on the substrate is usually provided near the substrate. For example, there is one using a crystal resonator. And, by measuring the film thickness formed on the substrate with this crystal oscillator type film thickness meter and controlling the evaporation amount of the vapor deposition material, the quality of the vapor deposition film has been improved (for example, , See Patent Document 1).

Conventionally, when depositing multiple vapor deposition materials on a substrate, the quality of the vapor deposition film changes depending on the mixing ratio of the vaporized vaporized material, so each vaporized material is released individually and its release rate is measured. Therefore, it is necessary to control the discharge amount of each evaporation material.
JP-A-7-331421

  However, when detecting the release amount of each evaporation material, as shown in Patent Document 1, if the quartz vibrator type film thickness meter is provided on the upper part of the vacuum container, the release amount of the evaporation material after mixing There is a problem that it can only be detected.

  In addition, when the film thickness meter is provided near the outlet of each evaporation material to detect the amount of each evaporation material released, the evaporation material adheres to the surface of the crystal unit, and the measurement accuracy gradually decreases. Therefore, there is a problem that the film thickness meter must be replaced periodically and cannot be used for a long time. In addition, since the concentration of the evaporated material is much higher in the vicinity of the discharge port than in the vicinity of the substrate, the replacement frequency of the film thickness meter is further increased as compared with the case where the film thickness meter is provided in the vicinity of the substrate.

In addition, when replacing the crystal resonator, the vapor deposition apparatus must be stopped, which causes a problem that the operating rate of the apparatus is reduced.
Accordingly, an object of the present invention is to provide a vapor deposition apparatus capable of measuring the amount of evaporating material released for a long period of time even in the vicinity of the evaporating material emitting port where the evaporating material emission concentration is high.

  In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention is a vapor deposition apparatus for performing vapor deposition by attaching an evaporated material, which is an evaporated vapor deposition material, to a member to be vapor-deposited. An evaporation source having an evaporation heating means for evaporating the evaporation material, and an evaporation material extraction opening through which the evaporation material is discharged from the evaporation source, and the evaporation material Temperature control means provided at the edge of the extraction opening, and control means for calculating a temperature deviation between the heating set temperature of the evaporating material and the measured temperature detected by the temperature detection means, and the control The means controls the discharge amount of the evaporating material evaporated from the evaporation source based on the temperature deviation.

  The invention according to claim 2 is a vapor deposition apparatus that performs vapor deposition by attaching an evaporated material, which is an evaporated vapor deposition material, to a member to be vapor-deposited, and has a heating means for evaporation that heats the vapor deposition material. An evaporation source for evaporating the deposition material, an evaporation material guiding path for guiding the evaporation material evaporated by the evaporation source, and an evaporation material extraction opening formed to release the evaporation material guided from the evaporation material guiding path A temperature detecting means provided at an edge of the evaporating material extraction opening, a heating set temperature of the diffusion member, and a measurement detected by the temperature detecting means. Control means for calculating a temperature deviation with respect to the temperature, and the control means controls the discharge amount of the evaporating material evaporated from the evaporation source based on the temperature deviation.

  The invention according to claim 3 is the invention according to claim 1 or 2, wherein a discharge amount adjusting means for adjusting a discharge amount of the evaporation material is provided in the evaporation material guiding path, The control means controls the discharge amount adjusting means based on the temperature deviation.

  Furthermore, the invention according to claim 4 is the invention according to any one of claims 1 to 3, wherein the control means controls the heating means for evaporation based on the temperature deviation. It is characterized by that.

In addition, the invention described in claim 5 is the invention described in any one of claims 1 to 4, characterized in that a plurality of the vapor deposition means are provided.
The invention according to claim 6 is the invention according to any one of claims 1 to 5, wherein the evaporation material is directed between the vapor deposition means and the vapor deposition member and toward the vapor deposition member. This is characterized in that uniform discharge means having high-density fine holes are arranged in the discharge path.

  The vapor deposition apparatus of the present invention is based on the temperature deviation between the measured temperature detected by the temperature detection means provided at the edge of the evaporating material extraction opening and the heating set temperature of the diffusion member, and the evaporating material release rate ratio Unlike the case where the film thickness meter on which the evaporation material is deposited is installed in a place where the emission concentration of the evaporation material is very high and the emission amount ratio is detected as in the conventional quartz oscillator type, It can be used continuously for a long time without a problem of evaporation material being deposited, and therefore it is possible to prevent the operating rate of the vapor deposition apparatus from being lowered.

Below, the vapor deposition apparatus which concerns on embodiment of this invention is demonstrated, referring drawings.
In this embodiment, when manufacturing a display unit of an organic EL display, that is, when an organic material is vapor-deposited on the surface of a glass substrate, and when two different kinds of vapor deposition materials (which are organic materials) are vapor-deposited. explain. Of the different vapor deposition materials, the main component material is referred to as a first vapor deposition material (hereinafter referred to as host), the trace material is referred to as a second vapor deposition material (hereinafter referred to as dopant), and each vapor deposition material is further heated. The evaporated materials are referred to as first and second evaporation materials for explanation.

  In this vapor deposition apparatus, as shown in FIG. 1, a glass substrate (an example of a member to be vapor-deposited) 1 is inserted in a horizontal direction so that its vapor deposition surface is downward, and is held by a holder 2. (Also referred to as a vapor deposition chamber) 3 and first and second components that are disposed in the lower part of the vapor deposition container 3 and above and below each other to release the vaporized material obtained by evaporating the first and second vapor deposition materials A and B. Discharge containers (an example of a diffusion member) 4 and 5 and evaporating material disposed above the first discharge container 4 and discharged from the first and second discharge containers 4 and 5 are introduced and mixed. Two first and second evaporations for heating and evaporating the third discharge container 6 as a mixing member and the first and second vapor deposition materials disposed outside the vapor deposition container 3 and having different types from each other. Container (an example of evaporation source, also called evaporation chamber) 7, 8 First and second evaporating material guide pipes (an example of evaporating material guiding path) 9 for guiding the evaporating material evaporated in each evaporating container 7, 8 to each discharging container 4, 5 disposed in the evaporating container 3 , 10 and the discharge amounts of the first and second evaporation materials in the respective discharge containers 4 and 5, and the thickness of the vapor deposition film formed on the surface of the glass substrate 1 (hereinafter referred to as film thickness) It is comprised from the monitoring control apparatus (an example of a control means) 11 which monitors a vapor deposition state. The first and second discharge containers 4 and 5, the first and second evaporation containers 7 and 8, the first and second evaporation material guide tubes 9 and 10, and the first and second evaporation material guide tubes. The vapor deposition means is formed by flow control valves 14 and 15 provided in the middle of 9, 10 for adjusting the opening of the flow path.

Next, the discharge containers 4, 5, 6 will be described.
Each of these discharge containers 4, 5, 6 has a predetermined thickness and a rectangular shape in plan view (of course, it may be a circle, a polygon, etc.) and each has a diffusion space (also referred to as a buffer space) It is a box-shaped container having 4a, 5a and 6a (which can make the concentration of the evaporation material uniform).

  A third discharge container 6 that discharges the first evaporation material and the second evaporation material to the glass substrate 1 is disposed above, and the first discharge container 4 that discharges the first evaporation material to the third discharge container 6. Is disposed below the third discharge container 6, and a second discharge container 5 that discharges the second evaporation material to the third discharge container 6 is disposed below the first discharge container 4.

  Further, as shown in FIGS. 1 and 2, a plurality of discharge nozzles 4b of the first evaporation material are formed on the upper surface of the first discharge container 4 in a plurality of rows, for example, vertically and horizontally at predetermined intervals. On the upper surface of the second discharge container 5, a plurality of second evaporation material discharge nozzles 5b are formed in a plurality of rows, for example, vertically and horizontally at predetermined intervals. The first evaporation material discharge nozzles 4 b and the second evaporation material discharge nozzles 5 b are alternately arranged, and these discharge nozzles 4 b and 5 b are connected to the lower surface of the third discharge container 6.

  As shown in FIG. 1, in order to detect (measure) the temperature of each of the discharge containers 4 and 5 when the first and second evaporating materials are discharged, on the edge side of each of the discharge containers 4 and 5. Are formed with evaporating material take-out holes (an example of evaporating material take-out openings) 4c and 5c, respectively, and in the detection thereof, the first measurement material discharged from the evaporating material take-out holes 4c and 5c. Separator plates 12 and 13 for preventing the second evaporating material from being mixed with the first and second evaporating materials discharged from the third discharge container 6 are provided.

  Further, as shown in FIG. 3, mesh plates (an example of uniform discharge means) 19a and 19b, which are discharge plates formed of metal members and having high-density fine holes, are provided on the upper part of the third discharge container 6. A plurality of sheets (two in the embodiment) are provided, and arranged on the outer surface of the third discharge container 6 so as to heat and maintain the third discharge container 6 itself at a predetermined temperature. A pipe 20 serving as a temperature maintaining means is provided. The pipe 20 is a high-frequency induction heating electrode, and cooling of the third discharge container 6 is performed by circulating cooling water supplied from a cooling water supply unit (not shown) inside the pipe 20. . And the power of a high frequency power supply (not shown) is adjusted by measuring the temperature of the cooling water flowing out from the pipe 20.

  The first evaporating material guide tube 9 is for guiding the first evaporating material evaporated in the first evaporating vessel 7 to the first releasing vessel 4, and the second evaporating material guiding tube 10 is used for the second evaporation. The second evaporating material evaporated in the container 8 is guided to the second discharging container 5. Further, in the middle of each, a flow rate at which the transfer amount of the evaporating material, that is, the discharge amount can be adjusted and opened and closed. Control valves (an example of the discharge amount adjusting means, which may be, for example, an opening / closing valve having an opening adjusting function) 14 and 15 are provided.

  In addition, a sheath heater 16 (also referred to as a heat retaining means), which is a heating means for heat retention, is disposed over substantially the entire surface of each of the discharge containers 4 and 5 and each of the evaporation material guide tubes 9 and 10. Each evaporation material is considered to be held (maintained) at an optimum temperature (note that FIG. 2 shows only the case where it is provided in the discharge container 5).

The evaporation containers 7 and 8 are provided with electric heaters (an example of evaporation heating means) 17 and 18 for heating the evaporation containers 7 and 8 to evaporate the vapor deposition material.
Next, the monitoring control device 11 will be described.

  As shown in FIG. 1, the monitoring control device 11 is a thermoelectric device that can detect the temperature at the edge of the evaporating material extraction holes 4c, 5c when each emissive container 4 (5) releases the evaporating material. A pair of film thickness gauges 21a and 21b (which are an example of temperature detection means, also referred to as temperature measurement means) and a film thickness meter for detecting the film thickness to which the evaporation material is attached, located at a position immediately adjacent to the glass substrate Discharge amount ratio of each evaporation material from the discharge container 4 (5) based on the thickness detection sensor 22, the measured temperature detected by the thermocouple 21a (21b), the heating set temperature of the discharge container 4 (5) The release rate X (Y) (the amount of evaporated material released per unit time) is obtained, and this release rate X (Y) is maintained at a preset release rate X ′ (Y ′) (described later). Release rate maintaining means 23 for controlling Based on a film thickness detecting means 24 for obtaining a film thickness deposited on the glass substrate 1 by inputting a detection signal from the film thickness detecting sensor 22 and a control signal (described later) input from the discharge rate maintaining means 23. The opening degree adjusting means 25 for adjusting the opening degree of the flow rate control valve 14 (15) provided in the evaporating material guiding pipe 9 (10), and the electric heater based on the control signal similarly inputted from the discharge rate maintaining means 23 17 (18) heating adjustment means 26 for adjusting the heating, and a monitor (printer or the like) which is a display means for displaying the deviation value and film thickness between the release rate X (Y) and the release rate X ′ (Y ′). 27). As the film thickness detection sensor 22, an optical film thickness meter or the like that optically reads the thickness of a vapor deposition film or a crystal oscillator is used.

  The release rate maintaining means 23 includes a release rate calculation unit 23a for inputting a measured temperature detected by the thermocouple 21a (21b) to obtain a release rate X (Y) at the time of film formation, and each of the discharge containers 4 and 5. A release rate setting unit 23b for setting a desired release rate X ′ (Y ′) and a release rate X (Y) detected by the release rate detection unit 23a and a release set in the release rate setting unit 23b The rate X ′ (Y ′) is inputted to calculate the deviation (value) between the release rate X (Y) and the release rate X ′ (Y ′), and the opening degree of the control signal generated based on this deviation is adjusted. The discharge rate control unit 23c outputs the deviation value to the monitor 27 as well as the means 25 and the heating adjustment means 26.

  The release rate calculation unit 23a calculates the temperature deviation ΔT (° C.) and the release rate (Å) determined by subtracting the measured temperature detected by the thermocouple 21a (21b) from the heating set temperature of the discharge container 4 (5). / S) has reference data (FIG. 4) showing the relationship. Then, by calculating the temperature deviation ΔT during film formation, the release rate X (Y) during film formation of the discharge container 4 (5) is obtained from the reference data.

  The reference data is obtained in advance by the experimental device 31 shown in FIG. 5, and the experimental device 31 is connected via an evaporating container 32 for heating and evaporating the vapor deposition material through a connecting member 33, and includes a plurality of nozzles. The thermoelectric device is provided at the edge of the discharge container 34 formed with the part 34a and one of the nozzle parts 34a, and detects the temperature at the edge of the nozzle part 34a, that is, the local temperature of the discharge container 34 itself. A film thickness meter 36 is provided which is disposed above the pair 35 and the nozzle portion 34a and measures the amount of discharge from the nozzle portion 34a as the film thickness. The experimental apparatus 31 is arranged in a vapor deposition container so that the air in the vapor deposition container can be discharged (vacuumable). Moreover, since the nozzle part 34a is easily subjected to heat exchange with the evaporation material, the temperature of the nozzle part 34a is measured when measuring the temperature.

  In the experiment by the experimental apparatus 31, the set temperature of the discharge container 34 is maintained at 340 ° C., the temperature of the nozzle part 34 a of the evaporation container 32 is detected by the thermocouple 35, and the nozzle part 34 a is detected by the film thickness meter 36. The amount of the evaporated material released from the unit is calculated, and the temperature deviation ΔT between the set temperature and the measured temperature detected by the thermocouple 35, and the release rate that is the ratio of the amount released per unit time, By obtaining the relationship, the reference data is obtained.

In the above configuration, a case where two kinds of vapor deposition materials, that is, a host and a dopant are vapor-deposited on the glass substrate 1 will be described.
That is, the first evaporation container 7 and the second evaporation container 8 are respectively heated to the heating set temperature to evaporate the host as the first vapor deposition material and the dopant as the second vapor deposition material, respectively. 9 and 10 to the diffusion spaces 4a and 5a in the first discharge container 4 and the second discharge container 5, and the discharge nozzles 4b of the first discharge container 4 and the second discharge container 5 It guides to the 3rd container 6 for discharge via each discharge nozzle 5b. At this time, the evaporating material induction tubes 9 and 10 and the discharge containers 4 and 5 are maintained at optimum temperatures by the sheath heater 16, and the discharge container 6 is maintained at an optimum temperature by induction heating. In addition, the inside of the container 3 for vapor deposition which vapor-deposits evaporation material on the glass substrate 1, each container 4-8, and each induction | guidance | derivation tube 9, 10 is made into the predetermined vacuum degree.

  Then, the host and dopant introduced into the diffusion space 6a of the third release container 6 are released from the meshes of both mesh plates 19a and 19b, so that these two evaporation materials are uniformly mixed and distributed in a uniform manner. A film of an organic material is formed on the surface.

  At the time of this film formation, the discharge rate calculation unit 23a inputs the measured temperature detected by the thermocouple 21a (21b), and subtracts the measured temperature from the heating set temperature of the discharge container 4 (5). A deviation ΔT is calculated, and a release rate X (Y) during film formation of the discharge container 4 (5) is obtained from the temperature deviation ΔT and reference data obtained in advance by the experimental apparatus 31. Then, a deviation between the release rate X (Y) and the release rate X ′ (Y ′) input from the release rate setting unit 23b is calculated, and a control signal for performing control so as to eliminate this deviation is opened. It outputs to the adjustment means 25 and controls the discharge | release amount of each evaporation material discharge | released from the container 7 (8) for evaporation. When it is difficult to control the release amount of the evaporation material only by the opening adjustment means 25, the control signal is also output to the heating adjustment means 26, and the release amount is controlled together with the opening adjustment means 25.

  The opening degree adjusting means 25 to which the control signal is input outputs an open signal or a close signal to each flow control valve 14 (15), and the evaporative material is released by the flow control valve 14 (15) to which this open signal or close signal is input. The amount is adjusted, and the discharge amount of each evaporation material discharged from the evaporation container 7 (8) is controlled.

  Similarly, when a control signal is also input to the heating adjustment means 26, the heating adjustment means 26 outputs a heating signal or a heat reduction signal to the electric heater 17 (18), and inputs this heating signal or a heat reduction signal. The heating of the evaporation containers 7 and 8 is adjusted by the electric heater 17 (18), and the discharge amount of each evaporation material discharged from the evaporation container 7 (8) is controlled.

  Further, a detection signal from the film thickness detection sensor 24 is input to the film thickness detection means 24 to determine the film thickness formed on the surface of the glass substrate 1, and the glass substrate 1 has reached a predetermined film thickness. In this case, the film thickness detecting means 24 outputs a forced stop signal to at least the opening degree adjusting means 25, and the opening degree adjusting means 25 receiving the forced stop signal outputs a closing signal to both flow rate control valves 14 and 15 to provide a host. And stop the emission of dopants.

Of course, when the film is formed, the deviation value and the film thickness formed on the surface of the glass substrate 1 are displayed on the monitor 27.
Thus, the temperature deviation between the measured temperature detected by the thermocouple 21a (21b) provided at the edge of the evaporating material extraction hole 4c (5c) and the heating set temperature of the discharge container 4 (5). ΔT is calculated, and the release rate X (Y) during film formation of the release container 4 (5) is obtained from the temperature deviation ΔT and the reference data. The release rate X (Y) and the release rate setting unit 23b A deviation from a preset release rate X ′ (Y ′) is calculated, and a control signal is generated that is controlled to eliminate this deviation. Then, the opening degree of the flow rate control valve 14 (15) is adjusted based on this control signal, and when it is difficult to control the amount of evaporating material released only by the opening degree adjusting means 25, the electric heater 17 (18) is heated. By performing the adjustment, the discharge amount of each evaporation material discharged from the evaporation container 7 (8) is controlled.

  In addition, when the mixing ratio of two kinds of vapor deposition materials, that is, a host and a dopant is, for example, host: dopant = 100: 1, it becomes difficult to control only with the flow rate control valves 14 and 15. By changing the size of the diameters of the first and second evaporating material guiding tubes 9 and 10, for example, by reducing the diameter of the evaporating material guiding tube through which a low proportion of the dopant passes, the emission amount can be easily controlled. It can be carried out.

  As described above, according to the embodiment, the measured temperature detected by the thermocouple 21a (21b) provided at the edge of the evaporating material extraction hole 4c (5c) and the heating of the discharge container 4 (5). Based on the temperature deviation ΔT with respect to the set temperature, the release rate, that is, the ratio of the amount of evaporative material released, is determined. Unlike the case where the emission rate is detected by installing in a very high place, it can be used continuously for a long time without the problem of evaporating material accumulation, thus preventing the operating rate of the vapor deposition system from being lowered. can do.

  In the above embodiment, the separators 12 and 13 are disposed in the vicinity of the evaporating material take-out holes 4c and 5c. However, instead of the separators 12 and 13, the evaporating material take-out holes are provided from the evaporating material take-out holes. A tubular guide member that guides only the evaporation material may be arranged, and a thermocouple may be provided at the edge of the guide member. In addition, when the evaporation material discharged from each of these evaporation material extraction holes does not affect the evaporation material discharged from the third discharge container quantitatively, it is not necessary to provide a separator or a guide member. .

  In the above embodiment, the first and second evaporation containers 7 and 8 are disposed outside the evaporation container 3. However, the evaporation containers 7 and 8 include the evaporation material guide pipes 9 and 10. May be disposed in the deposition container 3.

  Furthermore, in the above embodiment, no member that shields heat radiation is provided between the discharge containers 4 and 5, but an isolator plate (corrugated plate or the like) that is a shielding plate for shielding heat radiation. May be provided).

  In addition, in the above embodiment, the monitoring control device 11 includes the flow control valves 14 and 15 in order to control the discharge amounts of the first and second evaporation materials released from the evaporation container 7 (8). The opening adjusting means 25 for controlling and the heating adjusting means 26 for controlling the electric heaters 17 and 18 are provided. However, only one of the opening adjusting means 25 or the heating adjusting means 26 is provided. Good.

  In the above embodiment, two mesh plates 19a and 19b are provided on the upper part of the third discharge container 6 as the uniform discharge means. However, a punching metal plate having fine holes arranged uniformly and with high density, etc. One or more may be provided.

  Further, in the above embodiment, the temperature of the evaporating material extraction holes 4c and 5c formed at the edge portions of the first discharge container 4 and the second discharge container 5 is detected. If there is no container such as the first and second discharge containers 4 and 5, the temperature of the edge of the nozzle formed at a place where heat exchange with the evaporation material is often performed is measured. That's fine. In this category, for example, a manifold (also referred to as a manifold) that is heated (heated) at a set temperature is arranged in a plane, and a plurality of discharge holes are provided in each pipe of the manifold so that the discharge holes are arranged two-dimensionally. The method includes measuring the temperature of the edge of the discharge hole to be measured and controlling the discharge amount. In addition, an equal discharge means such as the mesh plate or the punching metal plate may be provided on these discharge holes, and the evaporated material that has passed through the discharge plate may be directed toward the substrate.

It is sectional drawing which shows schematic structure of the vapor deposition apparatus which concerns on embodiment of this invention. It is a perspective view of the 2nd discharge container of the vapor deposition apparatus. It is a perspective view of the 3rd container for discharge of the vapor deposition apparatus. It is a graph which shows the relationship between the discharge | release rate of the vapor deposition apparatus, and a temperature deviation. It is a perspective view of the experimental apparatus of the vapor deposition apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Glass substrate 4 1st discharge | emission container 4c Evaporation material extraction hole 5 2nd release container 5c Evaporation material extraction hole 7 1st evaporation container 8 2nd evaporation container 9 1st evaporation material induction tube 10 1st 2 Evaporating material guide tube 11 Monitoring and control devices 14, 15 Flow rate control valves 17, 18 Electric heater 21a Thermocouple 21b Thermocouple ΔT Temperature deviation

Claims (6)

A vapor deposition apparatus for performing vapor deposition by attaching an evaporation material, which is an evaporated vapor deposition material, to a member to be vapor-deposited,
An evaporation source having evaporation heating means for heating the evaporation material, and evaporating the evaporation material;
An evaporation means having an evaporation material extraction opening from which the evaporation material is released from the evaporation source;
And a temperature detecting means provided at an edge of the evaporating material extraction opening, and a control means for calculating a temperature deviation between the heating set temperature of the evaporating material and the measured temperature detected by the temperature detecting means. And the said control means controls the discharge | release amount of the said evaporation material evaporated from the said evaporation source based on the said temperature deviation, The vapor deposition apparatus characterized by the above-mentioned. A vapor deposition apparatus for performing vapor deposition by attaching an evaporation material, which is an evaporated vapor deposition material, to a member to be vapor-deposited,
An evaporation source having evaporation heating means for heating the evaporation material, and evaporating the evaporation material;
An evaporating material guiding path for guiding evaporating material evaporated by the evaporation source;
A vapor deposition means having a vaporization material extraction opening formed and a diffusion member for discharging the vaporization material guided from the vaporization material guide path;
And a temperature detection means provided at an edge of the evaporative material extraction opening, and a control means for calculating a temperature deviation between the heating setting temperature of the diffusion member and the measured temperature detected by the temperature detection means. The vapor deposition apparatus according to claim 1, wherein the control means controls a discharge amount of the evaporation material evaporated from the evaporation source based on the temperature deviation. A discharge amount adjusting means for adjusting the discharge amount of the evaporation material is provided in the evaporation material guiding path,
The vapor deposition apparatus according to claim 1, wherein the control unit controls the discharge amount adjusting unit based on the temperature deviation. 4. The vapor deposition apparatus according to claim 1, wherein the control unit controls the evaporation heating unit based on the temperature deviation. 5. The vapor deposition apparatus according to claim 1, comprising a plurality of the vapor deposition means. 6. The uniform discharge means having high-density fine holes is arranged between the vapor deposition means and the vapor deposition member and in the vaporization material discharge path toward the vapor deposition member. The vapor deposition apparatus of any one of Claims.

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