JP2012052195A - Thin film deposition system and thin film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology by which an organic layer having uniform distribution is deposited on the surface of a large-sized object for film deposition when an organic EL element is manufactured.SOLUTION: An organic vapor deposition apparatus has a planar vapor releasing device 10 in which a horizontal diffusion section 10H and a vertical diffusion section 10V where vapors of a host material and a dopant material being evaporation materials are successively diffused, are provided. The horizontal diffusion section 10H has first to fourth diffusion chambers 11 to 41 which are stepwise partitioned from the introduction side toward the releasing side of the vapors of the evaporation materials and connected through first to fourth communication holes 12 to 42. The vertical diffusion section 10V has first to third diffusion chambers 111 to 131 which are stepwise partitioned from the introduction side toward the releasing side of the vapors of the organic materials and connected through second and third communication holes 122, 132. The third diffusion chamber 131 of the final stage is connected to a vapor mixing chamber 141 through a plurality of fourth communication holes 142.

Description

  The present invention relates to a deposition technique such as a thin film material for producing an organic EL display, an organic EL lighting device, a deposited polymer film, and the like.

7A and 7B are schematic configuration diagrams of an organic vapor deposition apparatus according to the prior art, FIG. 7A is a sectional view showing an internal configuration, and FIG. 7B is an evaporation source and a surface evaporator. It is a top view which shows the structure of these.
As shown in FIGS. 7A and 7B, the conventional organic vapor deposition apparatus 201 has a vacuum chamber 202 connected to a vacuum exhaust system (not shown), and is a film formation target inside the vacuum chamber 202. A substrate 203 is arranged.
A surface evaporator 204 is provided inside the vacuum chamber 202.
The surface evaporator 204 is configured by arranging a plurality of pipe-like steam dischargers 207 each having a heater 205 for heating and provided with a nozzle 206 for discharging steam. The steam discharger 207 includes a steam transport pipe 208. To the evaporation source 210.
The evaporation source 210 has an evaporation container 212 in which an organic material 211 is accommodated, and a heater 213 for heating is attached to the outer wall of the evaporation container 212.
With such a configuration, the vapor of the organic material vaporized in the evaporation source 210 is introduced into the vapor discharger 207 via the vapor transport pipe 208, and the vapor is discharged from the nozzle 206 and reaches the substrate 203. It has become.

However, in such a conventional technique, since the vapor transport pipe 208 is disposed in the vacuum chamber 202, the flow of the vapor of the evaporation material is affected. As a result, the vapor discharged from the vapor discharger 207 is affected. There is a problem that the distribution becomes non-uniform.
That is, in the prior art, the amount of steam discharged from the plurality of steam dischargers 207 cannot be individually controlled, and the amount of discharged steam is different for each steam discharger 207. There is a problem that the uniformity of the film thickness is poor.

On the other hand, the prior arts according to Patent Documents 1 and 2 have a problem that different vapors cannot be mixed and the host material and the dopant material necessary for the light emitting layer of the organic EL element cannot be co-deposited.
In addition, since these conventional technologies are configured by curved pipes, there is a problem that the conductance of the material vapor passage is small and the evaporation rate is difficult to increase, and there is a problem that the apparatus is enlarged and the cost is increased. There is also a problem that it is difficult to make the flow rate in the pipe uniform.

JP 2004-79904 A JP-A-7-90572

  The present invention has been made in order to solve the problems of the conventional technology, and the object of the present invention is to have a uniform distribution on the surface of a large film-forming object when an organic EL element is produced. The object is to provide a technique capable of forming an organic layer.

In order to achieve the above object, the present invention includes a vacuum chamber in which a film formation target is disposed, and a plurality of vapor supplies for supplying vapor of an organic material that is an evaporation material provided outside the vacuum chamber. A planar vapor discharger for discharging the vapor of the organic material supplied from the plurality of vapor supply sources toward the film formation target, and the planar vapor discharger includes: A steam mixing chamber for mixing a plurality of vapor diffusion portions, each of which is supplied with a vapor of the organic material from a plurality of vapor supply sources and whose atmosphere is isolated from each other, and a plurality of organic material vapors diffused in the vapor diffusion portion The vapor diffusion section has a plurality of vapor diffusion sections in which the directions of the vapors of the plurality of organic materials are the same or different, and the plurality of vapor diffusion sections are on the introduction side of the vapor of the organic materials Gradual division from the discharge side to the discharge side The plurality of diffusion chambers are connected to each other through a communication port through which the vapor of the organic material can pass, and the plurality of vapor diffusion units are connected at the final stage. The final stage diffusion chamber of the vapor diffusion section is an organic vapor deposition apparatus connected to the vapor mixing chamber via a communication port through which the vapor of the organic material can pass.
In the present invention, the plurality of vapor diffusion sections are configured to guide the vapor of the organic material in the horizontal direction, and the vertical direction configured to guide the vapor of the organic material in the vertical direction. It is effective also when it has a diffusion part.
In the present invention, when the plurality of vapor diffusion portions are configured to diffuse the vapor of the organic material by the vertical diffusion portion after diffusing the vapor of the organic material by the horizontal diffusion portion. Is also effective.
The present invention is also effective when partition walls for isolating each other's atmosphere are provided in the plurality of diffusion chambers of the vapor diffusion portion in the planar vapor discharger.
In the present invention, the communication port of the vapor diffusion section in the planar vapor discharge device is also effective when the number is increased from the vapor introduction side to the discharge side of the organic material. is there.
In the present invention, the plurality of communication ports of the vapor diffusion section in the planar vapor discharger increase by 2 ^n-1 pieces (n is a natural number) from the vapor introduction side to the emission side of the organic material. It is also effective when configured as described above.
The present invention is also effective when a heating means for heating the vapor of the organic material is provided in the plurality of diffusion portions in the planar vapor discharger.
In the present invention, the plurality of vapor supply sources are also effective when each has vapor amount control means for independently controlling the amount of vapor of the organic material supplied to the planar vapor discharger. .
The present invention is a method for forming an organic film on a substrate surface in a vacuum using any one of the above-described organic vapor deposition devices, the step of diffusing the vapor of the organic material in each of the plurality of vapor diffusion portions. It is the organic vapor deposition method which has.
The present invention is also effective when a host material and a dopant material for forming an organic thin film layer of an organic EL device are used as the evaporation material.

In the case of the present invention, the vapor diffusion part of the planar vapor discharger has a plurality of vapor diffusion parts for diffusing the vapors of the plurality of organic materials, and the plurality of vapor diffusion parts introduces the vapors of the organic material. A plurality of diffusion chambers divided in stages from the side toward the discharge side, and the plurality of diffusion chambers are connected to each other through a communication port through which the vapor of the organic material can pass. Since the plurality of vapor diffusion units are connected to the vapor mixing chambers through the communication ports through which the vapor of the organic material can pass through the final-stage diffusion chambers of the final-stage vapor diffusion unit. After the vapors of different organic materials are reliably diffused in the vapor diffusion section, the vapors of different organic materials can be sufficiently mixed in the vapor mixing chamber.
As a result, according to the present invention, for example, when film formation is performed on a large substrate by vapor deposition, the film thickness and film quality in each region on the large substrate can be made uniform. Can be made uniform.

Further, in the present invention, the vapor diffusion part has a plurality of vapor diffusion parts having different directions in which the vapor of the organic material is guided, for example, in the horizontal direction and the vertical direction. For example, the flow rate of the organic material vapor is uniform, that is, constant, as compared with the case where the organic material vapor is divided by a curved pipe, so that more uniform film formation can be performed.
Further, in the case of the present invention, the plurality of vapor diffusion portions of the planar vapor discharger are supplied with vapors of organic materials from a plurality of vapor supply sources and the atmospheres are isolated from each other. Even when vapor deposition is simultaneously performed using (for example, a dopant material and a host material for a light-emitting layer of an organic EL element), cross-contamination in the vapor emitter can be prevented.

In the present invention, when heating means for heating the vapor of the organic material is provided in the plurality of diffusion portions in the planar vapor discharger, an organic substance is formed in the vapor diffusion portion of the vapor discharger. The vapor of the organic material can be reliably diffused and led to the vapor mixing chamber without the vapor of the material being deposited.
In the present invention, each of the plurality of steam supply sources controls a steam amount control means (for example, a valve or a heating control means) for independently controlling the amount of the organic material steam supplied to the planar steam discharger. If so, the vapor amount control means is controlled (for example, increasing / decreasing the heating amount or switching the valve) to form a full-color or white organic layer using vapors of the three primary colors of light. Is possible.

  ADVANTAGE OF THE INVENTION According to this invention, when manufacturing an organic EL element, for example in the apparatus which manufactures an organic EL element, it can film-form with distribution uniformly on the surface of a large-sized film-forming target object.

Schematic plan view of an organic EL manufacturing apparatus using an organic vapor deposition apparatus according to the present invention Sectional drawing which shows the structure of the surface vapor | steam discharger of the organic vapor deposition apparatus The perspective view which shows the external appearance structure of a same surface steam discharger Schematic showing the configuration of the horizontal diffusion section of the same-surface steam discharger The schematic block diagram which shows the other example of the planar vapor discharger of this invention (A) (b): Schematic configuration diagram showing another example of the steam branching unit in the present invention (A): A schematic configuration diagram of an organic vapor deposition apparatus according to the prior art, a cross-sectional view showing the internal configuration (b): a plan view showing a configuration of an evaporation source and a surface evaporator according to the prior art

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
FIG. 1 is a schematic plan view of an organic EL manufacturing apparatus using an organic vapor deposition apparatus according to the present invention, and FIG. 2 is a cross-sectional view showing a configuration of a surface vapor emitter of the organic vapor deposition apparatus.
FIG. 3 is a perspective view showing an external configuration of the same-surface steam discharger, and FIG. 4 is a schematic view showing a configuration of a horizontal diffusion portion of the same-surface steam discharger.
Hereinafter, the vertical relationship will be described based on the configuration shown in FIGS. 2 and 3, but the present invention is not limited to this.

As shown in FIG. 1, the organic EL manufacturing apparatus 1 of the present embodiment is of a multi-chamber type and has a transfer chamber 2 connected to a vacuum exhaust system (not shown).
A transfer robot 3 is provided in the transfer chamber 2, and a preparation / removal chamber 4 A, a substrate pretreatment chamber 4 B, an electrode film formation chamber 4 C, an organic layer film formation chamber 4 D, a sealing chamber provided around the transfer chamber 2. The substrate (film formation target) 5 and the mask 5M are transferred between the stop chamber 4E and the mask chamber 4F.
The preparation / removal chamber 4A, the substrate pretreatment chamber 4B, the electrode film formation chamber 4C, the organic layer film formation chamber 4D, the sealing chamber 4E, and the mask chamber 4F are each connected to a vacuum exhaust system (not shown) and independently. And evacuate.

In the organic layer deposition chamber 4D, a surface vapor discharger (planar vapor discharger) 10 for forming, for example, an organic layer of an organic EL element on the substrate 5 is provided.
On the other hand, a plurality of first to third evaporation devices 7 to 9 for forming an organic layer by vapor deposition are provided outside the organic layer deposition chamber 4D.
The first evaporation device 7 includes a hole injection layer material evaporation source 7 _HIL , a hole transport layer material evaporation source 7 _HTL , a first host material evaporation source 71, a second host material evaporation source 72, and a third host material evaporation source. 73, a fourth host material evaporation source 74 is connected to the supply pipe 6h connected to the surface vapor discharger 10 and branched through an independently switchable valve 70, respectively.

The second evaporation apparatus 8 includes a valve 80 that can be independently switched to a supply pipe 6a that is branched from the first assistant dopant material evaporation source 81 and the second assistant dopant material evaporation source 82 that are connected to the surface vapor emitter 10. Are connected to each other.
The third evaporation device 9 has a first dopant material evaporation source 91, a second dopant material evaporation source 92, a third dopant material evaporation source 93, and a fourth dopant material evaporation source 94 connected to the surface vapor emitter 10 and branched. The supply pipe 6d is connected to each other via an independently switchable valve 90.

As shown in FIG. 2, the surface vapor discharger 10 of the organic vapor deposition apparatus (thin film forming apparatus) 100 according to the present embodiment includes a plurality (four in this example) of first hosts provided outside the vacuum chamber 101. The material evaporation source 71, the second host material evaporation source 72, the first dopant material evaporation source 91, and the second dopant material evaporation source 92 are connected.
Here, in the evaporation containers of the first host material evaporation source 71 and the second host material evaporation source 72, host materials 50h and 51h for forming an organic thin film of the organic EL element are accommodated, respectively.
Further, in the evaporation containers of the first dopant material evaporation source 91 and the second dopant material evaporation source 92, dopant materials 50d and 51d for forming an organic thin film of the organic EL element are accommodated, respectively.
A heating unit 20 is disposed around the first host material evaporation source 71, the second host material evaporation source 72, the first dopant material evaporation source 91, and the second dopant material evaporation source 92.

The first host material evaporation source 71, the second host material evaporation source 72, the first dopant material evaporation source 91, and the second dopant material evaporation source 92 are connected to carrier gas supply devices 17h, 18h, 17d, and 18d, respectively. The carrier gas supplied from the carrier gas source 19 is supplied to the first host material evaporation source 71, the second host material evaporation source 72, the first dopant material evaporation source 91, and the second dopant material evaporation source 92, respectively. It is configured.
In the case of this example, the first host material evaporation source 71 and the second host material evaporation source 72 are connected to the supply pipe 6h for the host materials 50h and 51h through the valve 70, respectively.
On the other hand, the first dopant material evaporation source 91 and the second dopant material evaporation source 92 are connected to the supply pipe 6d for the dopant materials 50d and 51d through the valve 90, respectively.

As shown in FIGS. 2 and 3, the surface vapor discharge device 10 of the present embodiment includes a horizontal diffusion unit 10 </ b> H that guides and diffuses the vapor of the organic material in the apparatus main body 10 a in the horizontal direction, and the organic material. A vertical diffusion unit 10V that guides and diffuses the steam in the vertical direction.
Here, the surface steam discharger 10 is configured by arranging a plurality of steam branch units 15 configured by combining, for example, a plurality of box cells having a rectangular cross section, and each steam branch unit 15 has a horizontal diffusion. A vertical diffusing unit 10V is attached to the upper part of the unit 10H, thereby integrally forming the unit.
Further, heating for preventing the vapor of the organic material passing through the horizontal diffusion portion 10H from adhering to the inner wall portion between the periphery of the horizontal diffusion portion 10H of the surface vapor discharger 10 and the diffusion chamber described later. Means 30 are provided.
The horizontal diffusion part 10H includes a host material horizontal diffusion part 10h connected to the first and second host material evaporation sources 71 and 72 via a supply pipe 6h, and first and second dopant materials via a supply pipe 6d. And a dopant material horizontal diffusion portion 10d connected to the evaporation sources 91 and 92.
In the present embodiment, a dopant material horizontal diffusion portion 10d is provided at the bottom of the apparatus main body portion 10a, and a host material horizontal diffusion portion 10h is provided above the dopant material horizontal diffusion portion 10d.

Here, the host material horizontal diffusion portion 10h and the dopant material horizontal diffusion portion 10d of the horizontal diffusion portion 10H have the same basic configuration. Hereinafter, common parts are denoted by the same reference numerals. Further, the configuration of each of the host material horizontal diffusion portions 10h will be described as an example, and the dopant material horizontal diffusion portion 10d will be referred to as appropriate.
In addition, vapor discharge nozzles 60h and 60d having a small conductance are provided in the vicinity of the supply pipe 6h and the supply pipe 6d for supplying the vapor of the organic material, respectively, and the vapor of the organic material discharged from the vapor discharge nozzles 60h and 60d. Is measured by the film thickness sensors 61h and 61d.

As shown in FIGS. 2 and 4, the host material horizontal diffusion portion 10 h includes a plurality of (four in this example) first to first diffusion chambers as diffusion chambers from the organic material vapor introduction side to the emission side. Four diffusion chambers 11, 21, 31, 41 are provided in this order.
In the present embodiment, as will be described below, the number of first to fifth communication ports 12 increased by 2 ^n-1 (n is a natural number) from the steam introduction side to the discharge side, 22, 32, 42, and 52 are provided.
Here, the supply pipe 6 h described above is connected to the first diffusion chamber 11, and the vapor of the organic material is introduced through one first communication port 12.
The first diffusion chamber 11 is connected to the second diffusion chamber 21 via two second communication ports 22 provided in a portion on the vapor discharge side (portion on the vapor introduction side of the second diffusion chamber 21). Has been.

In the case of the present invention, although not particularly limited, from the viewpoint of preventing the reverse flow of the vapor of the organic material, that is, maintaining the pressure gradient, the sum of the areas of the second communication ports 22 is the first area. It is preferable to set so as not to be larger (smaller) than the sum of the areas of the communication ports 21.
Furthermore, from the viewpoint of evenly distributing the steam flow, the area and shape of the communication port in the same stage are made the same, and in this embodiment, the area and shape of the first to fifth communication ports 12 to 52 are the same. More preferably.
The second communication port 22 is positioned so as to face a portion on the vapor discharge side of the second diffusion chamber 21, whereby the vapor of the organic material is transferred to the vapor discharge side of the second diffusion chamber 21. (In FIG. 2, the positions of the second communication port 22 and the third communication port 32 are overlapped with each other in order to facilitate understanding). Drawn).

Furthermore, in the present embodiment, the second diffusion chamber 21 is partitioned into two regions by the two partition walls 21a, and the atmosphere in each region is isolated from each other. These partition walls 21a are effective for promoting the diffusion thereof by the collision of the vapor of the organic material.
In the present invention, the position where the partition wall 21a is provided is not particularly limited. However, from the viewpoint of more uniformly diffusing the vapor of the organic material, the second diffusion chamber 21 isolated by the partition wall 21a. It is preferable to provide in the position where the volume of each area | region and vapor | steam passage speed become equal.

The second diffusion chamber 21 is connected to the third diffusion chamber 31 via four third communication ports 32 provided in the vapor discharge side portion (the vapor introduction side portion of the third diffusion chamber 31). Has been.
In the case of the present invention, although not particularly limited, from the viewpoint of preventing the reverse flow of the vapor of the organic material, that is, maintaining the pressure gradient, the sum of the respective areas of the third communication ports 32 is as described above. It is preferable to set so as not to be larger (smaller) than the sum of the areas of the second communication ports 22.
The position of the third communication port 32 is set so as to face the portion on the vapor discharge side of the third diffusion chamber 31, and the vapor of the organic material introduced thereby causes the third diffusion chamber 31 to pass through the third diffusion chamber 31. It is configured so as to promote the diffusion of the steam by colliding with the wall portion on the steam release side (in FIG. 2, the positions of the third communication port 32 and the fourth communication port 42 are positioned for easy understanding). Are drawn to overlap).

In the present embodiment, the third diffusion chamber 31 is partitioned into four regions by, for example, six partition walls 31a, and the atmosphere in each region is isolated from each other. These partition walls 31a are effective for promoting diffusion of the organic material vapor by collision.
In the present invention, the position at which the partition wall 31a is provided is not particularly limited, but from the viewpoint of more uniformly diffusing the vapor of the organic material, the third diffusion chamber 31 partitioned by the partition wall 31a. It is preferable to provide in the position where the volume of each area | region and the vapor | steam passage speed become equal.

Further, a fourth diffusion chamber 41 is provided in a portion of the third diffusion chamber 31 on the vapor discharge side.
Here, the fourth diffusion chamber 41 is connected to the fourth diffusion chamber via eight fourth communication ports 42 provided in the portion on the vapor introduction side (the portion on the vapor discharge side of the fourth diffusion chamber 41). 41.
In the case of the present invention, although not particularly limited, the sum of the areas of the fourth communication ports 42 is described above from the viewpoint of preventing the reverse flow of the vapor of the organic material, that is, maintaining the pressure gradient. It is preferable to set so as not to be larger (smaller) than the sum of the areas of the third communication ports 32.
The position of the fourth communication port 42 is set so as to face the portion on the vapor discharge side of the fourth diffusion chamber 41, whereby the vapor of the organic material is transferred to the vapor discharge side of the fourth diffusion chamber 41. It is constituted so that the diffusion of the vapor is promoted by colliding with the wall portion.

Furthermore, in the present embodiment, the fourth diffusion chamber 41 is partitioned into eight regions by seven partition walls 41a, and the atmosphere in each region is isolated from each other. These partition walls 41a are effective for promoting the diffusion thereof by the collision of the vapor of the organic material.
In the present invention, the position where the partition wall 41a is provided is not particularly limited. However, from the viewpoint of more uniformly diffusing the vapor of the organic material, the fourth diffusion chamber 41 partitioned by the partition wall 41a. It is preferable to provide in the position where the volume of each area | region and the vapor | steam passage speed become equal.

As shown in FIG. 4, in the present embodiment, a plurality of (fourteen in this example) fourth diffusion chambers 41 of the host material horizontal diffusion portion 10h are provided on the vapor discharge side of the fourth diffusion chamber 41. The fifth communication port 52 is connected to the connection chamber 51h.
For the dopant material horizontal diffusion portion 10d, the fourth diffusion chamber 41 is provided via a plurality (16 in this example) of the fifth communication ports 52 provided on the vapor discharge side of the fourth diffusion chamber 41. Each is connected to the connection chamber 51d.

As shown in FIGS. 2 and 3, each of the connection chambers 51h and 51d is formed so as to extend in the vertical (Z-axis) direction, and a plurality of the above-described steam is formed above the connection chambers 51h and 51d. A vertical diffusion unit 10 </ b> V of the surface vapor discharger 10 configured by the branch unit 15 is provided.
In the present embodiment, the vertical direction diffusion part 10V of the surface vapor discharger 10 includes a plurality (16 in this example) of the host material vertical diffusion part 110h and a plurality (16 in this example) of the dopant material vertical. It is comprised from the spreading | diffusion part 110d.
As shown in FIGS. 3 and 4, the host material vertical diffusion part 110 h and the dopant material vertical diffusion part 110 d have an organic material vapor introduction direction (X-axis direction) according to the positions of the connection chambers 51 h and 51 d. ), The host material vertical diffusion part 110h and the dopant material vertical diffusion part 110d are configured to be adjacent to each other by being shifted from each other by a predetermined distance in a direction orthogonal to (). .

Here, the host material vertical diffusion unit 110h and the dopant material vertical diffusion unit 110d of the vertical diffusion unit 10V have first to third diffusion chambers 111, 121, 131 and a steam mixing chamber 141, as will be described later. And have the same basic configuration. Hereinafter, common parts are denoted by the same reference numerals. Further, the configuration will be described taking one host material vertical diffusion portion 110h as an example, and the dopant material vertical diffusion portion 110d will be referred to as appropriate.
In this example, the connection chamber 51h of the host material vertical diffusion portion 110h is connected to the first diffusion chamber 111 via the first communication port 112h provided in the upper portion thereof.
The connection chamber 51d of the dopant material vertical diffusion portion 110d is connected to the first diffusion chamber 111 through a first communication port 112d provided in the upper portion thereof.
Moreover, in this Embodiment, the vertical direction diffusion part 10V of the surface vapor | steam discharger 10 is the ^{1st-1st of the} number which increases by 2 ^n-1 piece (n is a natural number) toward the discharge | release side from the vapor | steam introduction side. Four communication ports 112 (112h, 112d), 122, 132, 142 are provided.

The first to third diffusion chambers 111, 121, 131, the steam mixing chamber 141, and the first to fourth communication ports 112, 122, 132, 142 of the vertical diffusion unit 10V of the surface vapor discharger 10 are described above. It corresponds to the first to fourth diffusion chambers 11, 21, 31, 41 and the first to fourth communication ports 12, 22, 32, 42 of the horizontal diffusion portion 10H, and has the same configuration, It is provided under the same conditions.
The partition walls 121a, 131a, and 141a also correspond to the partition walls 21a, 31a, and 41a of the horizontal diffusion portion 10H described above, have the same configuration, and are provided under the same conditions.
Furthermore, the vapor | steam of the organic material which passes the inside of the vertical direction diffusion part 10V adheres to the inner wall part between the circumference | surroundings of the vertical direction diffusion part 10V of the surface vapor discharge device 10, and between the 1st-3rd diffusion chambers 111-131. A heating means 130 is provided for preventing the above.

On the other hand, a steam mixing chamber 141 is provided in a portion of the third diffusion chamber 131 on the steam release side.
In this case, the third diffusion chamber 131 of the host material vertical diffusion portion 110h and the dopant material vertical diffusion portion 110d is provided at the respective ceiling portions 131h and 131d (bottom portions of the steam mixing chamber 141) as shown in FIG. In addition, the steam mixing chamber 141 is connected via eight (four) fourth communication ports 142.

The vapor mixing chamber 141 is divided into eight regions by seven partition walls 141a for each of the host material vertical diffusion part 110h and the dopant material vertical diffusion part 110d, but the host material vertical diffusion part 110h and the dopant material vertical part The corresponding regions of the diffusion part 110d communicate with each other, and the host material 50h introduced from the host material vertical diffusion part 110h and the third diffusion chamber 131 of the dopant material vertical diffusion part 110d through the fourth communication port 142, The vapor of 51h and the vapors of the dopant materials 50d and 51d are mixed.
On the other hand, a plurality of vapor discharge nozzles (vapor discharge ports) 152 for discharging the vapor of the organic material toward the substrate 5 are provided in the upper part of the vapor mixing chamber 141.
These vapor discharge nozzles 152 are arranged along the arrow Y direction, which is the horizontal direction, at predetermined intervals at positions facing the substrate 5 in each region of the vapor mixing chamber 141.
In the present invention, the interval between the vapor discharge nozzles 152 which are the vapor discharge ports is not particularly limited, but it is preferable to provide them at regular intervals from the viewpoint of ensuring the uniformity of the film thickness.

A plurality of heaters 153 for heating are provided in the upper part of the steam mixing chamber 141, and a heat radiation prevention plate 154 is provided above the heaters 153.
In the present embodiment having such a configuration, in the case where an organic material film is deposited on the substrate 5, the first host material is formed in a state where the pressure in the organic layer deposition chamber 4D is set to a predetermined pressure. The vapors of the host materials 50h and 51h are introduced from the evaporation source 71 and the second host material evaporation source 72 into the host material horizontal diffusion part 10h of the horizontal diffusion part 10H of the surface vapor discharger 10 through the supply pipe 6h.

Further, the dopant materials 50d and 51d are vaporized from the first dopant material evaporation source 91 and the second dopant material evaporation source 92 via the supply pipe 6d, and the dopant material horizontal diffusion portion of the horizontal diffusion portion 10H of the surface vapor discharge device 10 is used. Install in 10d.
The vapors of the host materials 50h and 51h and the dopant materials 50d and 51d introduced into the horizontal diffusion portion 10h of the host material and the horizontal diffusion portion 10d of the horizontal diffusion portion 10H of the surface vapor emitter 10 are horizontal diffusion of the host material. After being diffused through the first to fourth diffusion chambers 11 to 14 and the first to fourth communication ports 12 to 42 in the portion 10h and the dopant material horizontal diffusion portion 10d, respectively, via the fifth communication port 52 They are introduced into the connection chambers 51h and 51d, respectively.

Then, the vapors of the host materials 50h and 51h and the vapors of the dopant materials 50d and 51d pass through the first communication ports 112h and 112d, and the first diffusion chambers of the plurality of host material vertical diffusion portions 110h of the vertical direction diffusion portion 110V. 111 and the first diffusion chamber 111 of the plurality of dopant material vertical diffusion portions 110d, and the first to third diffusion chambers 111 to 131 and the second to fourth communication ports 122 to 142, respectively. After passing through and being diffused, they are introduced into the steam mixing chamber 141 and mixed in the steam mixing chamber 141.
Thereafter, the vapors of the host materials 50h and 51h and the dopant materials 50d and 51d, which are sufficiently mixed with the passage of time, are discharged in a plane from the vapor discharge nozzle 152 of the vapor mixing chamber 141 toward the substrate 5, thereby A vapor deposition film of an organic material is formed on the entire surface of the substrate 5.

As described above, according to the present embodiment, the vapor diffusion unit of the surface vapor discharger 10 includes the horizontal direction vapor diffusion unit 10H that diffuses the vapors of a plurality of organic materials, and the vertical direction vapor diffusion unit 10V. The horizontal vapor diffusion part 10H and the vertical vapor diffusion part 10V are divided into the first to fourth diffusion chambers 11 to 41 and the first to fourth diffusion chambers which are divided in stages from the vapor introduction side to the emission side of the organic material. The diffusion chambers 11 to 41 and 111 to 131 have the first to fourth communication ports 12 to 42 through which the vapors of the organic material can pass through the diffusion chambers adjacent to each other. In addition, the third diffusion chamber 131 in the final stage of the vertical direction vapor diffusion unit 10V is connected through the first to fourth communication ports 112h (or 112d) to 142, and the communication port through which the vapor of the organic material can pass. Through 142 Since each of the vapor mixing chambers 141 is connected to the vapor mixing chamber 141, the vapors of different organic materials are securely diffused in the horizontal vapor diffusion unit 10 </ b> H and the vertical vapor diffusion unit 10 </ b> V, and then the different organic materials are mixed in the vapor mixing chamber 141. Steam can be mixed well.
As a result, according to the present embodiment, for example, when film formation is performed on a large substrate by vapor deposition, the film thickness and film quality in each region on the large substrate can be made uniform. The organic layer can be made uniform.

Further, in the present embodiment, the surface vapor diffusion unit 10 includes the horizontal direction vapor diffusion unit 10H and the vertical direction vapor diffusion unit 10V in which directions of introducing the vapor of the organic material are different from each other. The number of times is large. For example, the flow rate of the vapor of the organic material is uniform, that is, constant as compared with the case where the vapor of the organic material is divided by a curved pipe, so that more uniform film formation can be performed.
Further, in the case of the present embodiment, the horizontal direction vapor diffusion unit 10H and the vertical direction vapor diffusion unit 10V of the surface vapor discharger 10 are supplied with vapors of organic materials from the plurality of evaporation devices 7 to 9, respectively, and the mutual atmosphere. Therefore, even if vapor deposition is performed simultaneously using different organic materials (for example, a host material and a dopant material for a light emitting layer of an organic EL element), cross contamination in the surface vapor emitter 10 is prevented. Can be prevented.

Further, in the present embodiment, the horizontal vapor diffusion part 10H and the vertical vapor diffusion part 10V of the surface vapor discharger 10 are provided with heating means 30 and 130 for heating the vapor of the organic material. In addition, the vapor of the organic material can be reliably diffused and guided to the vapor mixing chamber 141 without the vapor of the organic material being deposited in the horizontal vapor diffusion unit 10H and the vertical vapor diffusion unit 10V.
Furthermore, in the present embodiment, the plurality of evaporation devices 7 to 9 have valves 70 to 90 that independently control the amount of vapor of the organic material supplied to the surface vapor discharger 10, respectively. By switching these valves 70 to 90, it is possible to form a full-color or white organic layer by using vapors of organic materials of the three primary colors of light.
In addition, in the present embodiment, since the surface vapor emitter 10 is configured using a box cell, it is possible to provide the organic EL manufacturing apparatus 1 that is compact and simple in configuration.

FIG. 5 is a schematic configuration diagram illustrating another example of the steam branching unit according to the present invention. In the following, the same reference numerals are given to the portions corresponding to the above embodiment, and the detailed description thereof is omitted.
As shown in FIG. 5, the steam branching unit 15A of this example includes the first to fourth diffusion chambers 11 to 41 in the horizontal diffusion unit 10H and the first to third diffusion chambers 111 to 111 of the vertical diffusion unit 10V. In 131 and the steam mixing chamber 141, a partition is not provided, and the other configurations are the same as those of the steam branch unit 15 described above.
According to the steam branching unit 15A of this example, the configuration is simpler and the cost can be reduced.
However, from the viewpoint of more uniformly diffusing and mixing the vapor of the organic material, the first to fourth diffusion chambers 11 to 41 in the horizontal direction diffusion portion 10H of the surface vapor discharger 10 as in the above embodiment. In addition, it is preferable to provide partition portions in the first to third diffusion chambers 111 to 131 and the steam mixing chamber 141 in the vertical direction diffusion portion 10V. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

6 (a) and 6 (b) are schematic configuration diagrams showing another example of the steam branching unit according to the present invention. Hereinafter, the portions corresponding to the above-described embodiment and FIGS. 6 (a) and 6 (b) correspond. Parts are denoted by the same reference numerals, and detailed description thereof is omitted.
A steam branching unit 16A shown in FIG. 6A is configured by stacking and connecting members having a columnar cross section to form a steam branching unit.
In this example, a first diffusion chamber 161 to a fifth diffusion chamber 165 are provided.
The first diffusion chamber 161 is provided with a steam inlet 171, and the second to fifth diffusion chambers 162 to 165 are provided with a first communication port 172 to a third communication port 175 at the bottom. It has been.
Here, the number of the first communication port 172 to the third communication port 175 increases by 2 ^n-1 (n is a natural number) from the steam introduction side to the discharge side, as in the above embodiment. Is set to

Further, a vapor discharge port 176 is provided in the ceiling portion of the fifth diffusion chamber 165.
On the other hand, the heating means 130 described above is provided around the first to fifth diffusion chambers 161 to 165.
If the steam branching unit 16A of this example having such a configuration is used, the heating rate can be increased and the heating can be performed uniformly, so that the heating rate can be improved and the temperature of the steam can be kept uniform. There is an effect that can be.

The steam branching unit 16B shown in FIG. 6B is configured by stacking and connecting members having an octagonal cross section to form a steam branching unit, and the other configuration is the steam branching unit 16A shown in FIG. 6A. Is the same.
If the steam branching unit 16B of this example having such a configuration is used, manufacturing can be facilitated, so that there is an effect that the assembly time can be shortened and the cost can be reduced.
Other functions and effects of the steam branching units 16A and 16B in this example are the same as those in the above embodiment, and thus description thereof is omitted.

The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above embodiment, the vertical diffusion unit 10V is provided above the horizontal diffusion unit 10H. However, the present invention is not limited to this, and the vertical diffusion unit 10V is provided below the horizontal diffusion unit 10H. It is also possible to provide.
In this case, it is possible to adopt a so-called deposit down film forming structure in which the vapor of the organic material is discharged downward to form a film.
Moreover, it can also comprise so that the vapor | steam of the organic material introduce | transduced into the horizontal direction diffusion part 10H may be discharge | released, for example in a horizontal direction.

On the other hand, the number of communication ports provided in the diffusion chamber and the steam mixing chamber is not limited to that in the above embodiment, and can be changed as appropriate.
However, from the viewpoint of reliably diffusing the steam of the steam, it is preferable to provide eight or more communication ports at the bottom of the steam mixing chamber.

Furthermore, the present invention can be applied not only when forming an organic layer of an organic EL manufacturing apparatus but also when forming an electrode layer of an organic EL manufacturing apparatus.
In addition, the present invention can also be applied to an apparatus for performing vapor deposition polymerization using a plurality of raw material monomers.
Furthermore, the horizontal diffusing unit 10H can be installed not only in the horizontal direction but also in the inclined direction or in the vertical direction according to the arrangement direction of the film formation target.

DESCRIPTION OF SYMBOLS 1 ... Organic EL manufacturing apparatus 4D ... Organic layer film-forming chamber 5 ... Substrate (film formation object)
7... First evaporation device 10... Surface vapor discharger (planar vapor discharger)
10H: Horizontal diffusion part 10V ... Vertical diffusion part 11 ... First diffusion chamber 12 ... First communication port 21 ... Second diffusion chamber 21a ... Partition wall 22 ... Second communication port 31 ... Third diffusion chamber 31a ... partition part 32 ... third communication port 41 ... fourth diffusion chamber 41a ... partition part 42 ... fourth communication port 100 ... organic vapor deposition device (thin film forming device)
101 ... Vacuum chamber 110h ... Host material vertical diffusion portion 110d ... Dopant material vertical diffusion portion 111 ... First diffusion chamber 112 (112h, 112d) ... First communication port 121 ... Second diffusion chamber 121a ... Partition portion 122 ... First 2 communicating port 131... Third diffusion chamber 131 a. Partition wall 132. 3rd communicating port 141 .. steam mixing chamber 142 .. 4 communicating port 141 a .. partition wall 152 ... steam discharge nozzle (steam discharge port)

Claims (10)

A vacuum chamber in which an object to be deposited is placed;
A plurality of vapor supply sources for supplying vapor of an organic material, which is an evaporation material, provided outside the vacuum chamber;
A planar vapor discharger for discharging the vapor of the organic material supplied from the plurality of vapor supply sources toward the film formation target;
The planar vapor discharge device includes a plurality of vapor diffusion portions, each of which is supplied with the vapor of the organic material from the plurality of vapor supply sources and whose atmosphere is isolated from each other, and a plurality of diffusion regions diffused in the vapor diffusion portion. A vapor mixing chamber for mixing the vapor of the organic material,
The vapor diffusion part has a plurality of vapor diffusion parts having the same or different directions for guiding the vapors of the plurality of organic materials,
The plurality of vapor diffusion sections have a plurality of diffusion chambers that are divided in stages from the vapor introduction side to the discharge side of the organic material, and the diffusion chambers are adjacent to each other. It is connected through a communication port through which organic material vapor can pass,
An organic vapor deposition apparatus in which the final stage diffusion chamber of the final stage vapor diffusion section is connected to each of the plurality of vapor diffusion sections via the communication port through which the vapor of the organic material can pass.   A plurality of vapor diffusion units configured to guide the vapor of the organic material in a horizontal direction; and a vertical diffusion unit configured to guide the vapor of the organic material in a vertical direction. The organic vapor deposition apparatus of Claim 1 which has.   3. The organic material according to claim 2, wherein the plurality of vapor diffusion units are configured to diffuse the vapor of the organic material by the vertical diffusion unit after the vapor of the organic material is diffused by the horizontal diffusion unit. Vapor deposition equipment.   4. The thin film forming apparatus according to claim 1, wherein partition walls for isolating each other's atmosphere are provided in a plurality of diffusion chambers of the vapor diffusion portion in the planar vapor discharger.   5. The communication port of the vapor diffusion part in the planar vapor discharger is configured to increase in number from the vapor introduction side to the discharge side of the organic material. The thin film forming apparatus described. The plurality of communication ports of the vapor diffusion part in the planar vapor discharger are configured to increase by 2 ^n-1 pieces (n is a natural number) from the vapor introduction side to the discharge side of the organic material. The thin film forming apparatus according to any one of claims 1 to 5.   The thin film forming apparatus according to any one of claims 1 to 6, wherein a heating means for heating the vapor of the organic material is provided in the plurality of diffusion portions in the planar vapor discharger.   8. The steam source according to claim 1, wherein each of the plurality of steam supply sources has steam amount control means for independently controlling the amount of steam of the organic material supplied to the planar steam discharger. Vapor deposition equipment. A method for forming an organic film on a substrate surface in a vacuum using the organic vapor deposition device according to any one of claims 1 to 8,
An organic vapor deposition method comprising a step of diffusing the vapor of the organic material in each of the plurality of vapor diffusion portions.   The organic vapor deposition method according to claim 9, wherein a host material and a dopant material for forming an organic thin film layer of an organic EL device are used as the evaporation material.

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