JP2009097044A - Film deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stably perform a film deposition operation for a long time at a high deposition rate so as to increase productivity of organic EL displays, and to achieve a uniform film thickness distribution. <P>SOLUTION: A film deposition apparatus deposits a sublimed or evaporated deposition material on a substrate W in a deposition chamber. In the apparatus, a linkage space 14 is disposed between a plurality of material-containing parts 10 equipped with heating units 11 and discharge outlets 13 for discharging the deposition material toward the substrate W. A high deposition rate can be achieved by using the plurality of material-containing parts 10. The deposition materials sublimed or evaporated from the individual material-containing parts 10 are mixed in the linkage space 14 and discharged toward the substrate W from the plurality of discharge outlets 13 as vapor, which realizes a uniform film thickness distribution. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method for forming an organic compound layer or the like of an organic light emitting element.

  As a display element corresponding to a full-color flat panel display, an organic light emitting element (organic electroluminescent element) has attracted attention. An organic light-emitting element is a self-luminous element that emits light by electrically exciting an organic compound layer having fluorescence or phosphorescence, and is capable of high luminance, high viewing angle, surface emission, thinness, and multicolor emission. , Etc. An organic light emitting element is a device that exhibits a desired function by laminating a plurality of thin films formed with a thickness of several nanometers to several hundred nanometers. In a flat panel display formed by arranging such organic light emitting elements in the substrate plane, the accuracy of the film thickness itself of the plurality of thin organic compound layers constituting the element is increased, and the film in the substrate plane is increased. Making the thickness distribution constant is an important manufacturing issue.

  As a film forming apparatus for manufacturing an organic light emitting element, a film forming apparatus disclosed in Patent Document 1 is known. In this apparatus, a discharge port that discharges a film forming material as a gas molecule is disposed at a position facing the substrate in the film forming chamber, and a material container that communicates with the discharge port is disposed outside the film forming chamber. Then, by closing the flow rate regulating valve (flow rate adjusting mechanism) provided on the supply path that connects the discharge port and the material storage unit, the material supply operation for replacing the material storage unit without breaking the vacuum of the film forming chamber is performed. It is possible to implement.

  Therefore, it is not necessary to stop the film forming process even when the material is changed, and the work can be efficiently performed. Thereby, the production efficiency of mass production of a flat panel display (organic EL display) equipped with an organic light emitting element can be further enhanced.

JP 2005-281808 A

  However, also in the above prior art, when pursuing cost reduction in mass production of organic EL displays, it is a problem to shorten the film formation time of each layer in order to increase the number of production.

  In the film forming apparatus, it is necessary to achieve a high film forming speed in all the organic layers constituting the organic light emitting element. However, Patent Document 1 discloses a specific description for increasing the film forming speed. Absent.

  On the other hand, the following means are known to increase the film formation rate, and these can be used in combination with the film formation apparatus, but each method has the following unsolved problems. There are challenges.

(1) Method of Increasing Temperature It is known that if the temperature applied to the film forming material filled in the material container is increased, the film forming rate increases exponentially according to the saturation vapor pressure curve. However, in many cases, the film forming material constituting the organic light emitting element includes a material having a very narrow temperature difference between the evaporation or sublimation temperature and the material decomposition temperature. For this reason, it is difficult to achieve a high film formation rate by adjusting only the temperature in a temperature range at a practical film formation rate (0.1 to 100 Å / sec).

(2) Method of Increasing the Surface Area to Evaporate It is known that the film formation rate can be increased by increasing the surface area of the film forming material that evaporates in the material container. However, since the organic material constituting the organic light emitting element has low thermal conductivity, it is difficult to achieve a uniform temperature over the entire wide surface, and a temperature distribution is usually formed. On the other hand, as described in (1) above, since the allowable temperature range at a practical film formation rate is narrow, depending on the temperature distribution to be formed, the material decomposition at the high temperature portion in contact with the material accommodating portion Is concerned. Due to such problems, it is difficult to apply the method of increasing the surface area in order to increase the deposition rate to the organic material constituting the organic light emitting element.

  In addition, when it is assumed that the structure of the discharge port, the supply path, etc. is essential for the convenience of disposing the material container outside the film forming chamber, the inside of the material container is close to the saturated vapor pressure, The rate of increase of the film formation rate relative to the increase in surface area approaches saturation. For this reason, there is a problem that, at a high film formation rate, the efficiency of increasing the film formation rate is reduced by increasing the surface area.

(3) Method of Increasing Material Storage Units When the number of material storage units is increased with respect to one substrate, the film formation rate can be increased by the integration effect. However, there is a variation in the film formation rate controlled by each material container, and increasing the number of material containers increases the error in the film thickness distribution in the substrate surface.

  In order to further increase the productivity of the organic EL display according to the present invention, it is possible to perform a stable film forming operation at a high film forming speed for a long time using a plurality of material accommodating portions, and achieve a uniform film thickness distribution. An object of the present invention is to provide a film forming apparatus and a film forming method capable of performing the above.

  In order to achieve the above object, a film forming apparatus of the present invention contains a film forming chamber for forming a film of sublimated or evaporated film forming material on a substrate in a vacuum or a reduced pressure state, and a film forming material. A plurality of material containing portions to be sublimated or evaporated; a discharge port for releasing the film forming material supplied from the plurality of material containing portions toward the substrate in the film forming chamber; the plurality of material containing portions; A connection space connecting the plurality of material storage portions to each other between the outlet and the film forming material supplied from the plurality of material storage portions is discharged from the discharge port through the connection space It is characterized by making it.

  In the film forming method of the present invention, a film forming material obtained by sublimating or evaporating by heating a plurality of material containing portions through a supply path is provided with a discharge port facing a substrate placed in a vacuum or reduced pressure film forming chamber. Then, in the film forming method for forming a film on the substrate by discharging from the discharge port, the film forming material supplied from the plurality of material accommodating portions is mixed in a connection space connecting the plurality of material accommodating portions to each other. And a step of discharging a film forming material mixed in the connection space from the discharge port and forming a film on the substrate.

  A plurality of material accommodating portions are used so that a high film formation rate can be obtained while suppressing thermal damage to the film formation material. And the film-thickness distribution is made uniform by mixing the film-forming material sublimated or evaporated from each material accommodating part in a connection space.

  Even when film formation is continued for a long time at a high film formation speed on a large substrate, it is possible to suppress thermal damage of the film forming material and to suppress film thickness non-uniformity, thereby realizing highly accurate film thickness control. it can.

  The best mode for carrying out the present invention will be described with reference to the drawings.

  As shown in FIG. 1, in order to form an organic compound layer of an organic light emitting device on a substrate W, the film forming materials are heated by a heating mechanism (heating means) 11 in a plurality of material accommodating portions 10 to be sublimated or evaporated. The formed film forming material is guided to the discharge port 13 in the film forming chamber via the supply path 12. A plurality of discharge ports 13 for discharging the film forming material P are arranged at positions facing the substrate W in the film forming chamber in a vacuum or reduced pressure state.

  That is, the three material accommodating portions 10 (10-a, 10-b, 10-c) communicating with the connection space 14 via the supply paths 12 (12-a, 12-b, 12-c) are respectively connected to each other. Are surrounded by a heating mechanism 11 (11-a, 11-b, 11-c) that can be controlled independently. Three material accommodating portions 10 (10-a, 10-b, 10-c) are filled with the same film forming material.

  As described above, the film forming material evaporated or sublimated from the plurality of material containing portions filled with the same material is discharged through the connection space, so that the difference in film forming speed in each material containing portion can be reduced. .

  The size of the connected space should be set to be equal to or greater than the average free process of the film forming material so that the film density existing as a gas in the connected space repeatedly collides, diffuses and mixes to make the spatial density uniform. Is preferred. In the case of an organic material that constitutes an organic light emitting element, the length of the short side is preferably 5 mm or more within the practical range.

  The means for controlling the deposition rate in the apparatus of FIG. 1 is a heating mechanism for the material container. For example, in the case where the film formation rate or its distribution is reduced outside the predetermined standard, each heating mechanism is controlled independently of each other, and the temperature applied to each material container is corrected to correct the error. Raise as much as you need.

  By simultaneously using the three material storage portions filled with the same film formation material, the film formation speed on the substrate surface can be the composite component of the film formation speed of the three material storage portions. As a result, a high film formation rate can be achieved. This means that in increasing the film forming speed, the film forming speed in each material container can be reduced, and thermal damage to the material can be suppressed.

  Next, by using the apparatus of FIG. 1 and the comparative example shown in FIG. 6 having the same configuration and only one material container 10, the difference in film forming speed is derived. The effect of reducing the film forming speed necessary for the material container will be described.

  In the following formula, the film-forming material evaporated or sublimated in the material container is treated as a molecular flow in the communication space reaching the supply path, the connection space, and the discharge port.

  In general, it is known that the deposition rate in the molecular flow region follows the following (Equation 1). The deposition rate is Q, the conductance is C, and the pressure difference in the system is ΔP.

Q = CΔP (Formula 1)
Here, in consideration of mass production, it is assumed that the material container is continuously heated at a certain temperature, or the case where the material container reaches the vicinity of the saturated vapor pressure. Treat as independent.

  The deposition rate ratio between the apparatus of FIG. 1 according to the present embodiment and the comparative example is as shown in (Formula 2). In this embodiment, the film formation rate and the synthetic conductance are Q1 and C1, and in the comparative example, Qref. , Cref. It was.

Deposition rate ratio: Q1 / Qref. = C1 / Cref. (Formula 2)
In general, it is known that the combined conductance in parallel and in series can be expressed by (Expression 3) and (Expression 4).

Composite conductance in parallel connection: C = C1 + C2 + C3 + (Equation 3)
Combined conductance in series: C = (1 / C1 + 1 / C2 + 1 / C3 +...) ⁻¹
(Formula 4)

  As a result, the combined conductance of the present embodiment and the comparative example is expressed by (Equation 5) and (Equation 6). In addition, conductance of each material accommodating part and the supply path connected to it is set to Ca, Cb, Cc, and conductance of a connection space and a discharge port is set to Cm.

Synthetic conductance of this embodiment: C1 = (Cm × (Ca + Cb + Cc)) / (Cm + Ca + Cb + Cc) (Formula 5)
Synthetic conductance of comparative example: Cref. = (Cm × Ca) / (Cm + Ca) (Formula 6)

  For example, if Cm = Ca = Cb = Cc = A, each combined conductance can be expressed as follows.

Synthetic conductance of the present embodiment: C1 = (3/4) × A (Expression 7)
Synthetic conductance of comparative example: Cref. = (1/2) × A (Formula 8)
Composite conductance ratio: C1 / Cref. = 3/2> 1 (Formula 9)
∴ C1> Cref. (Formula 10)

  Therefore, when the temperatures of all the material accommodating portions are made uniform, or when the inside of the material accommodating portion is in a state near the saturated vapor pressure, the film forming speed of the present embodiment is higher than that of the comparative example.

  The relationship of (Equation 10) is always established when the conductance Cm of the connection space and the discharge port is equal to or greater than the conductances Ca, Cb, and Cc of the material accommodating portions and the supply paths connected thereto.

  Further, a gate valve portion 15 is provided at a connection portion between each material storage portion 10 and the supply path 12. When a predetermined material container 10 is removed and replaced for material supply during film formation, the communication between the film formation chamber and the material container 10 is blocked by closing the corresponding gate valve 15 Can do the work.

  In the film forming process, two of the material accommodating portions 10 filled with the same type of material can be used at the same time, and the remaining one can be used for preparation. That is, the material container can be sequentially replaced during film formation. As a result, it is possible to reduce a reduction in operating rate accompanying the material supply.

  For example, after the temperature is adjusted by the heating mechanism 11 in advance so that the preparation material container 10 reaches a predetermined film formation speed, and the gate valve 15 of the material container 10 to be replaced is closed. Then, the preparation gate valve 15 is opened. In this way, a necessary amount of film forming material can be poured into the connecting space 14.

  Further, the temperature of the plurality of heating mechanisms 11 can be adjusted independently of each other. For this reason, what is necessary is just to adjust the preset temperature of each heating mechanism 11 according to the required synthetic | combination film-forming speed | rate, film thickness distribution, the material quantity etc. with which each material accommodating part 10 is filled.

  Although not shown, heating means are provided for members through which the film forming material passes, such as the supply path 12, the connection space 14, and the discharge port 13, other than the material container 10. The temperature can be adjusted as appropriate to prevent problems caused by the above.

  As shown in FIG. 2, the connection space 14 may be disposed together with the discharge port 13 in the film formation chamber 1 for forming a film on the substrate W, or as shown in FIG. Alternatively, the connecting space 14 may be disposed in the film forming chamber 1 so that only the discharge port 13 is opened in the film forming chamber 1.

  In addition, as shown in FIGS. 3 to 5, in the case where each supply path 12 is provided with a flow rate adjusting mechanism 20 that changes the flow rate, the flow rate adjusting mechanism is not controlled by the temperature, but the film forming speed is controlled. More preferably, 20 is used. This is because the organic material used in the organic light emitting device has low thermal conductivity, and the temperature control by the heating means has a slow time response, so that adjustment work takes time.

  As the flow rate adjusting mechanism 20, the structure of the film forming apparatus can be selected from a mechanism capable of adjusting, opening, or blocking the flow of film forming materials (gas molecules) such as needle valves, butterfly valves, gate valves or shutters. And can be selected according to the applicable range. If necessary, a combination of a plurality of valves and shutters can be used.

  Further, as shown in FIG. 5, when a plurality of pressure detectors 16 are arranged in the connection space 14 to detect the gas molecule density of the film forming material and its spatial distribution in the connection space 14 having a correlation with the film formation speed. Good. And it compares with the film-forming speed set to the film-forming speed setting part 31 of the film-forming speed control apparatus 30. FIG.

  That is, based on the detection data from the pressure detector 16, the pressure distribution detection means 32 is used to form a predetermined film formation speed and the difference between the distribution and the film formation speed and distribution actually formed. Analysis is performed by the speed control means 33. Then, a correction value in consideration of the difference allowance value is fed back to the opening degree adjustment of the flow rate adjustment mechanism 20. Note that it is preferable for stable monitoring that the pressure detector 16 is heated to prevent adhesion of the film forming material.

  Although not shown, a film formation speed detector for detecting the film formation speed of the film forming material flying from the discharge port 13 is provided to the substrate W in the space between the discharge port 13 and the substrate W. It may be provided in a place that does not interfere with the film formation. The film forming speed detector is not limited to the above position, and may be any place where there is a flow of film forming material. For example, a branch path may be provided in the middle of the supply path, and a film formation speed detector may be provided at the tip of the branch path, or may be detected at a plurality of locations depending on the size of the film formation apparatus. .

  In this embodiment, the substrate is disposed above the film formation chamber and the discharge port is disposed below the film formation chamber. However, the posture of the substrate is not limited to this, and the vertical arrangement or the vertical relationship between the substrate and the discharge port is determined. The substrate may be reversed and placed below.

  Further, the relative position of the substrate and the discharge port may be constant during the film formation period, but may be rotated or moved according to requirements such as the substrate size and the required film formation time.

  3 to 5, the flow rate adjusting mechanism is arranged outside the film formation chamber, but the present invention is not limited to this, and the arrangement location can be appropriately selected in consideration of controllability.

  Further, as shown in FIG. 3, the connection space may be disposed outside the film formation chamber. When heating the connection space, heat radiation from the connection space to the substrate can be reduced. This has the effect of reducing the relative positional error between the substrate and the mask, for example, when patterning using a high-definition shadow mask.

  According to this embodiment, a plurality of material storage portions filled with the same material are provided to increase the film formation speed without increasing the material temperature, and the film formation speed error of the film formation material vaporized from the material storage portion is connected. By relaxing in space, it is possible to continue film formation for a long time at a high film formation speed. Therefore, even in a mass production system using a large substrate, thermal damage of the film forming material can be suppressed and a desired film thickness and film thickness distribution can be achieved even with a short tact time.

  In this embodiment, one of a plurality of organic compound layers constituting an organic EL display is formed using the apparatus of FIG.

  A 400 mm × 500 mm glass substrate W is disposed in the upper part of the vacuum chamber serving as the film forming chamber 1, and an outlet for discharging the film forming material so as to face the film formation surface (front surface) side of the substrate W. 13 was provided.

  In the film forming apparatus described here, the substrate W is held by a transport type substrate holding mechanism and moved by 5 mm / sec to form a film on the entire surface of the substrate. The ultimate film thickness to be deposited on the substrate was set at 1000 mm as a target.

  The substrate W arranged in the film forming chamber was arranged at a position separated from the discharge port 13 by 200 mm. A plurality of chimney-shaped discharge ports 13 are provided at equal intervals on the connection space 14, and the connection space 14 is filled with the same film forming material through three supply paths 12 extending outside the film formation chamber 1. The three material storage portions 10 communicate with each other. The opening diameters of the discharge ports 13 were each 15 mm, and 10 lines were arranged on the connection space at a pitch of 50 mm. The connecting space 14 was 600 mm wide × 30 mm wide and 50 mm high.

  The three supply paths 12 are each provided with a flow rate adjusting mechanism 20 that blocks, opens, or variably adjusts the flow rate of the film forming material, and these can be controlled independently. The flow path adjusting mechanism 20 uses a needle valve.

  Each material accommodating part 10 is enclosed with the heater which is the heating mechanism 11 so that it can control to required temperature.

  A heater (not shown) for heating is also disposed around the discharge port 13, the connection space 14, the supply path 12, and the flow rate adjusting mechanism 20, and temperature control is possible at each part.

  Further, in a state where the flow of the film forming material is blocked by the flow rate adjusting mechanism 20 and evaporation or sublimation of the film forming material in the material containing portion 10 is stopped, only the material containing portion 10 is replaced with another material containing portion. It is possible to do.

  Although not shown, in this film forming apparatus, means for detecting the film forming speed of the film forming material flying from the discharge port 13 is arranged in the vicinity of the discharge port, and according to the output signal from the detecting means. Thus, the opening degree of the flow rate adjusting mechanism 20 can be controlled. The detecting means is a film thickness monitor using a crystal resonator.

  In such a film forming apparatus, while replacing the material container 10 as appropriate and supplying the film forming material, the 100 substrates prepared in the apparatus are continuously moved to form a total of about 200 minutes (about 3 days). Continued the membrane. In addition, 100 g of aluminum quinolinol complex (Alq3) was filled in each of the three material accommodating portions 10 having a diameter of 50 mm and a depth of 100 mm, and the material was sublimated at a temperature of 350 ° C. Alq3 is an organic material generally used as a carrier transport layer, and is known to have sublimation properties. Also, during the film formation period, the three needle valves were opened, and the film formation rate of 20 Å / sec was maintained immediately above the discharge port.

  When the thickness of the film deposited on each substrate was measured after the film formation, the film thickness was less than 4% of the target film thickness, and the film thickness distribution in the substrate surface was It was very uniform in the conveyance direction and in both directions orthogonal to it, and the error was 3% or less.

  Further, after film formation for a long time under the above conditions, a material decomposition inspection was performed on the film deposited on the substrate and the material container. As a result, no decomposed material was detected.

(Comparative Example 1)
The thickness of the film deposited on the substrate was measured using the conventional film forming apparatus shown in FIG. In order to achieve the same film formation rate of 20 Å / sec as in Example 1, the temperature of the material container was required to be 390 ° C.

  After the above film formation, the thickness of the film deposited on each substrate was measured. As a result, the error was 9% or less with respect to the target film thickness, and the film thickness distribution in the substrate surface was The error was 6% or less in both the transport direction and the direction orthogonal thereto.

  The reason why the error is larger than in Example 1 is that the rate of film formation rate error to temperature error is increased because the temperature is very high. In addition, since the sublimable material has low thermal conductivity, it is assumed that the temperature distribution in the material container also caused an error.

  Moreover, when the material decomposition | disassembly inspection was carried out similarly to Example 1, the decomposition material was partially detected. It is known that the decomposition temperature of Alq3 is in the range of 390 ° C to 400 ° C.

  In this embodiment, the organic compound layer constituting the organic light emitting element is formed using the apparatus of FIG.

  In addition to the film forming apparatus shown in FIG. 4, the film forming apparatus shown in FIG. 5 detects a pressure distribution (density distribution of gas molecules of the film forming material) in the connected space 14. 16 were arranged in three places. The flow rate adjustment mechanism 20 has a structure that is driven by receiving a signal from the film formation rate control device 30, and the opening degree of the flow rate adjustment mechanism 20 is maintained so as to maintain the film formation rate input by the film formation rate setting unit 31. Adjust.

  The flow of adjustment will be described in more detail. First, the pressure distribution data in the connection space 14 acquired through the pressure detector 16 is sent to the film formation speed control means 33 via the pressure distribution detection means 32. The film forming speed control means 33 compares the film forming speed fluctuation calculated based on the actually measured pressure distribution with the allowable value of the film forming speed fluctuation determined in advance by the film forming speed setting unit 31 to obtain a predetermined allowable value. The film formation speed to be corrected so as not to deviate from the value is calculated, and the correction value is sent to the opening degree adjusting means 34. Thereafter, the opening adjustment means 34 calculates the opening according to the correction value, and appropriately controls the opening of each flow rate adjustment mechanism 20.

  Using the above system, after forming a film under the same conditions as in Example 1, the thickness of the film deposited on each substrate was measured. The film thickness was less than 3% of the target film thickness. there were. Further, the film thickness distribution in the substrate plane was very uniform in the transport direction and in both directions orthogonal thereto, and the error was 2% or less.

  After film formation for a long time under the above conditions, when a material decomposition inspection was performed on the film deposited on the substrate and the material container, no decomposition material was detected.

It is a figure explaining the film-forming apparatus by one Embodiment. It is a figure which shows the whole structure of the apparatus of FIG. It is a figure which shows one modification. 1 is a diagram illustrating a film forming apparatus according to Example 1. FIG. 6 is a diagram illustrating a film forming apparatus according to Example 2. FIG. It is a figure which shows the film-forming apparatus by a comparative example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Deposition chamber 10 Material accommodating part 11 Heating mechanism 12 Supply path 13 Release port 14 Connection space 15 Gate valve 16 Pressure detector 20 Flow rate adjustment mechanism 30 Film thickness rate control apparatus 31 Film formation rate setting part 32 Pressure distribution detection means 33 Formation Membrane speed control means 34 Opening adjustment means

Claims (14)

A film formation chamber for forming a film of a sublimated or evaporated film formation material on a substrate in a vacuum or reduced pressure; and
A plurality of material containing portions each containing a film forming material and sublimated or evaporated by a heating means;
A discharge port for discharging the film forming material supplied from the plurality of material accommodating portions toward the substrate in the film forming chamber;
A connection space for connecting the plurality of material storage portions to each other between the plurality of material storage portions and the discharge port;
A film forming apparatus that discharges the film forming material supplied from the plurality of material accommodating portions from the discharge port through the connection space.   The film forming apparatus according to claim 1, further comprising: a plurality of flow rate adjusting mechanisms configured to block, open, or variably adjust a flow rate of the film forming material between the plurality of material accommodating portions and the connection space. .   The film forming apparatus according to claim 1, wherein the plurality of material accommodating portions are disposed outside the film forming chamber.   4. The film forming apparatus according to claim 1, wherein the heating means provided in each of the plurality of material accommodating portions can be controlled independently of each other. 5.   The film forming apparatus according to claim 1, wherein the plurality of flow rate adjusting mechanisms can be controlled independently of each other.   The film forming apparatus according to claim 1, wherein a plurality of pressure detectors are connected to the connection space. A discharge port is made to face a substrate placed in a vacuum or reduced pressure film formation chamber, and a plurality of material storage portions are heated and sublimated or evaporated to release the film formation material from the discharge port via a supply path. In a film forming method for forming a film on a substrate,
Mixing the film forming material supplied from the plurality of material storage portions in a connection space connecting the plurality of material storage portions to each other;
And a step of discharging a film forming material mixed in the connection space from the discharge port and forming a film on the substrate.   The film forming method according to claim 7, wherein a flow rate of the film forming material supplied to the connection space is controlled by a plurality of flow rate adjusting mechanisms provided in the supply paths of the plurality of material accommodating portions. .   The film forming method according to claim 7 or 8, wherein the film forming material is sublimated or evaporated by heating the plurality of material accommodating portions arranged outside the film forming chamber.   The film forming method according to claim 7, wherein the temperatures of the plurality of material accommodating portions are adjusted independently of each other.   The film forming method according to claim 8, wherein the flow rates of the plurality of flow rate adjusting mechanisms are adjusted independently of each other.   The film forming method according to claim 11, wherein the flow rates of the plurality of flow rate adjusting mechanisms are adjusted so as to reduce pressure differences detected by a plurality of pressure detectors connected to the connection space.   The film forming method according to claim 7, wherein the material container is removed or replaced during film formation.   14. A method of manufacturing an organic EL display, comprising a step of forming an organic compound layer by the film forming method according to claim 7.

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