KR20130105352A - Vacuum evaporation apparatus - Google Patents

Abstract

PURPOSE: A deposition apparatus is provided to continuously measure a deposition rate without returning the pressure in a vacuum chamber to an atmospheric pressure. CONSTITUTION: A deposition apparatus attaches a deposition material to a member subjected to deposition. A control means, which controls the opening degree of a path, is installed on a path that guides the evaporated deposition material to the member subjected to deposition. A first pressure sensor (21) is installed in the path in the more downstream than the control means. A second pressure sensor (22) is installed in the vacuum tub or the path in the more downstream than the first pressure sensor. The flow rate of the evaporated deposition material is obtained by the pressure difference measured by the two pressure sensors A controller (24) measures the deposition rate of the evaporated deposition material to the member subjected to deposition, and controls the opening degree of the path by the control means.

Description

Evaporation Equipment {VACUUM EVAPORATION APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus, and for example, to a deposition apparatus used for deposition of metal thin films, organic material thin films, metal electrode wiring such as solar cells and display panels, and organic EL light emitting layers.

In general, the thin film or the like is formed by vapor deposition in a vacuum atmosphere with a high vacuum of 10-4 Pa or more. For example, as shown in Japanese Laid-Open Patent Publication No. 2005-330537, a vacuum deposition apparatus is a vapor deposition material (evaporated particles) evaporated from a material storage container (crucible) provided with a heating mechanism in a high vacuum chamber. ), A dispersion chamber (manifold) is guided, and evaporated particles are discharged from a plurality of nozzles provided on the upper part of the manifold and deposited on a substrate to form a thin film. In such a vapor deposition apparatus, by optimizing the design (arrangement, size, angle, etc.) of the nozzle of the manifold, film thickness uniformity can be obtained with respect to a large area substrate even without moving parts such as a substrate rotating part.

The amount of deposition material deposited per unit time on the substrate, i.e. deposition rate (deposition rate, deposition rate), is usually controlled by the heating temperature of the crucible. However, even if the crucible temperature is stable, the deposition rate is difficult to stabilize due to heat being gradually transferred to the material in the crucible by heat conduction or the like. There has been proposed a method of stabilizing the deposition rate by providing a flow regulating valve in the movement path of the evaporation molecule and feeding back a signal from the film thickness sensor to the flow regulating valve (for example, Japanese Patent Laid-Open No. 2010-A). 242202).

As the film thickness sensor for measuring the deposition rate or for feedback of deposition rate control, a quartz crystal film thickness sensor is widely used. The crystal oscillator film thickness sensor uses the phenomenon of applying an alternating electric field to the crystal oscillator and resonating by making the natural oscillation frequency of the crystal oscillator equal to the frequency of the alternating electric field. When a substance such as metal is deposited on the surface of the crystal oscillator, the natural frequency of the crystal oscillator changes in the direction of low frequency. This change is proportional to the amount of deposited material. That is, the film thickness of the deposit is calculated by accurately detecting the change of the resonance frequency using the above-described resonance phenomenon.

However, if a deposited film having a thickness of, for example, 7000 to 8000 angstroms (700 to 800 nm) is deposited on the surface of the crystal oscillator, the resonance frequency becomes excessively low and the measurement error becomes large. For this reason, it is already difficult to use it as a crystal oscillator and must be replaced with a new crystal oscillator. For example, when the film formation process is performed at a deposition rate of 2 angstroms (0.2 nm) per minute, the life of the crystal oscillator is reached in about 60 to 70 hours. In the exchange, it is necessary to cool the vapor deposition source and return the inside of the vacuum chamber to atmospheric pressure. However, in the production line, etc., continuous deposition of about one week is required, so that the deposition material cannot be frequently cooled. For example, in the case where the evaporation material is an organic compound for organic EL, evaporation is carried out by heating it to about 300 degrees using a crucible such as ceramics, but in order to cool and reheat the crucible, a long time is required in the meantime. Productivity decreases because a deposition process is stopped.

There, a vapor deposition apparatus which controls the deposition rate without using a crystal oscillator is disclosed in Japanese Patent Laid-Open No. 2004-91858. In the vapor deposition apparatus disclosed in Japanese Patent Laid-Open No. 2004-91858, a crucible is disposed in a vacuum vessel, and a substrate holder is provided opposite to the crucible. An electric heater is wound around the outer circumferential portion of the crucible as heating means for heating and evaporating the deposition material contained in the crucible. In the vacuum vessel, a pressure sensor is disposed in order to measure the pressure of the ambient atmosphere of the vapor deposition material. A controller is connected to the pressure sensor, and the electric heater described above is connected to the controller.

With this configuration, when electric power is supplied from the controller to the electric heater and the vapor deposition material in the crucible is heated by the electric heater, the pressure in the ambient atmosphere of the vapor deposition material is increased by the evaporated particles (vaporized molecules; vaporized vapor deposition material) emitted from the crucible. , It is measured by the pressure sensor. Since there is a constant correlation between the pressure in the ambient atmosphere of the vapor deposition material and the amount of vaporized vapor deposition material (flow rate of evaporated particles), and there is a constant correlation between the flow rate of the vaporized particles and the deposition rate, the controller is connected to the pressure sensor. The deposition rate can be calculated from the measured pressure. There, the controller adjusts the amount of power supplied to the electric heater so that the pressure (measured value) measured by the pressure sensor becomes a preset value. As a result, a predetermined deposition rate is maintained to control the thickness of the deposited film formed on the surface of the substrate.

In Japanese Patent Laid-Open No. 2004-91858, the flow rate of evaporated particles is determined by one pressure sensor that measures the pressure of the surrounding atmosphere of the vapor deposition material. This is considered to be because the pressure variation around the substrate is small, and the pressure around the substrate is treated as a constant value. In reality, however, when the evaporated particles are released from the crucible to the vacuum chamber, the amount of evaporated particles in the vacuum chamber increases to generate pressure fluctuations, so that the flow rate of the evaporated particles cannot be accurately measured. For this reason, there exists a problem that a vapor deposition film cannot be formed at an accurate vapor deposition rate, and therefore, the characteristic calculated | required by a vapor deposition film cannot be obtained.

Moreover, as one pressure sensor, when forming a vapor deposition film by co-deposition by two types of vapor deposition materials, there exists a problem that the vapor deposition rate of each vapor deposition material cannot be calculated | required. Therein, the present invention can continuously measure the deposition rate without returning the pressure in the vacuum chamber to atmospheric pressure, thereby avoiding a decrease in productivity, and accurately determining the flow rate of the evaporated particles, thereby accurate deposition. It is an object of the present invention to provide a vapor deposition apparatus capable of forming a vapor deposition film at a rate.

In addition, the present invention can continuously measure the deposition rate without returning the pressure in the vacuum chamber to atmospheric pressure, thereby avoiding a decrease in productivity, and forming each deposition material when forming a deposition film by two kinds of deposition materials. It is an object of the present invention to provide a vapor deposition apparatus capable of accurately determining the flow rate of evaporated particles of H 2, thereby forming a vapor deposition film at an accurate vapor deposition rate.

In order to achieve the above object, the vapor deposition apparatus of the present invention according to claim 1 is a vapor deposition apparatus for attaching an evaporated deposition material in a vacuum chamber to a deposition member, wherein the evaporated deposition material is deposited on the deposition member. The adjusting means for adjusting the opening degree of this path is provided in the path | route led to the path | route, and the 1st pressure sensor is installed in the said path downstream of the said adjustment means, and it is downstream from the said 1st pressure sensor. By depositing a second pressure sensor in the path of the vapor deposition chamber or in the vacuum chamber, and obtaining the flow rate of the evaporated deposition material by the pressure difference measured by the two pressure sensors. The deposition rate for the member is measured, and the measurement rate is set so that the deposition rate thus measured is a predetermined deposition rate. Characterized in that the controller for adjusting the opening degree of the path by the adjustment means.

According to the above configuration, the flow rate of the evaporated particles (evaporated evaporation material) passing through the path is accurately determined by the pressure difference measured by the first pressure sensor and the second pressure sensor. In this way, the flow rate of the evaporated particles is proportional to the deposition rate for the member to be deposited, so that the deposition rate is continuously and accurately measured. In order for the measured deposition rate to become a predetermined deposition rate, it is necessary to control the flow rate of the evaporated particles to a predetermined flow rate corresponding to the predetermined deposition rate. This is realized by adjusting the opening degree of the path by the adjusting means.

In the vapor deposition apparatus of the present invention according to claim 2, in the vapor deposition apparatus according to the present invention, an orifice is provided in a path downstream from the adjusting means, and the first pressure sensor is provided upstream from the orifice. In addition, the second pressure sensor is provided downstream from the orifice.

According to the said structure, a pressure difference arises before and behind an orifice by C (conductance) of an orifice, and flow volume can be calculated | required more correctly based on this pressure difference.

In the vapor deposition apparatus of the present invention according to claim 3, in the vapor deposition apparatus of the present invention according to claim 1, a small path having a smaller diameter than that of other portions in this path is formed in a part of the path downstream from the adjusting means. And the first pressure sensor is installed upstream of the small path, and the second pressure sensor is provided downstream of the small path.

According to the said structure, a pressure difference generate | occur | produces back and forth by C (conductance) of the small path | path whose diameter was small, and flow volume can be calculated | required more correctly based on this pressure difference.

The vapor deposition apparatus of the present invention according to claim 4, wherein in the vacuum chamber, the deposition amount is smaller than the deposition amount of the evaporated first deposition material guided by the first path and the evaporated first deposition material and the second path is reduced. A vapor deposition apparatus for joining and mixing the second vapor deposition material guided in the third path and attaching the vaporized two kinds of vapor deposition materials to the vapor deposition member, wherein the first path is connected to the first path. A first adjusting means for adjusting the opening degree is provided, and a second adjusting means for adjusting the opening degree of the second path is provided in the second path, and an orifice is provided in the second path downstream of the second adjusting means. A first pressure sensor in a first path downstream from the first adjusting means, a second pressure sensor in the third path or the vacuum chamber, The third pressure sensor is provided in the second path downstream of the second adjusting means and upstream of the orifice, and the fourth pressure sensor is provided in the second path downstream of the orifice, and the first pressure sensor Determination of the flow rate of the evaporated first evaporation material by the pressure difference measured by the second pressure sensor to measure the deposition rate of the evaporated first evaporation material to the member to be deposited, and thus measured deposition rate The vaporized second deposition by adjusting the opening degree of the first path by the first adjusting means and by the pressure difference measured by the third pressure sensor and the fourth pressure sensor so that the predetermined deposition rate is obtained. By measuring the flow rate of the material, the deposition rate of the evaporated second deposition material on the member to be deposited is measured, A controller for controlling the opening degree of the second path by the second adjusting means is provided so that the measured deposition rate becomes a predetermined deposition rate.

According to the above configuration, the flow rate of the first evaporated particles (evaporated first deposition material) passing through the first path downstream from the first adjustment means by the pressure difference measured by the first pressure sensor and the second pressure sensor. This accurate measurement is carried out to measure the deposition rate of the first evaporated particles on the member to be deposited. In order to make the measured deposition rate a predetermined deposition rate, the flow rate of the first evaporation particles is adjusted by adjusting the opening degree of the first path by the first adjusting means.

In addition, a pressure difference is generated before and after the orifice by the C (conductance) of the orifice, and a second passage passing downstream from the second adjusting means by the pressure difference measured by the third pressure sensor and the fourth pressure sensor. The flow rate of the two evaporated particles (evaporated second evaporation material) is more accurately measured, so that the deposition rate of the second evaporated particles on the member to be deposited is measured. In order to make the measured deposition rate a predetermined deposition rate, the flow rate of the second evaporation particles is adjusted by adjusting the opening degree of the second path by the second adjusting means.

Furthermore, by providing the orifice, the pressure on the upstream side of the orifice becomes higher than the pressure on the downstream side. This prevents the backflow of the second evaporating particles in the second path and the inflow of the first evaporating particles from the first path to the second path.

The vapor deposition apparatus of the present invention according to claim 5 is characterized in that the vapor deposition apparatus of the present invention according to claim 4 is located on the downstream side of the second adjusting means in place of the orifice provided in the second path downstream of the second adjusting means. In a part of the second path, a small path having a smaller diameter than that of the other part in the second path is formed, the third pressure sensor is provided upstream from the small path, and the fourth pressure sensor is disposed more than the small path. It is provided in the downstream side, It is characterized by the above-mentioned.

According to the above configuration, a pressure difference occurs before and after due to the small path C (conductance), and the pressure difference further increases the flow rate of the evaporated particles of the second deposition material having a smaller deposition amount compared to the deposition amount of the first deposition material. You can get it exactly.

In the vapor deposition apparatus of the present invention, by providing two pressure sensors, the vapor deposition rate can be accurately obtained, and thus the vapor deposition film can be formed at an accurate vapor deposition rate, thereby reliably realizing the characteristics required for the vapor deposition film. According to the vapor deposition apparatus of the present invention, the crystal vibrator required when the crystal vibrator-type film thickness sensor is used becomes unnecessary, and the deposition rate can be continuously measured for a long time without returning the vacuum chamber to atmospheric pressure. Therefore, long time continuous vapor deposition becomes possible and the fall of productivity can be avoided.

According to another vapor deposition apparatus of the present invention, by providing four pressure sensors, the deposition rate of the two deposition materials can be accurately and accurately measured, and thus, the deposition film by each deposition material can be formed at the correct ratio / deposition rate. It is possible to reliably realize the characteristics required for the deposited film. According to another vapor deposition apparatus of the present invention, the crystal vibrator required when the crystal vibrator-type film thickness sensor is used becomes unnecessary, and the deposition rate can be continuously measured for a long time without returning the vacuum chamber to atmospheric pressure, Therefore, long time continuous vapor deposition becomes possible and the fall of productivity can be avoided. Further, by providing the orifice, it is possible to prevent the backflow of the second evaporating particles in the second path and the inflow of the first evaporating particles from the first path to the second path.

1 is a configuration diagram of Embodiment 1 of a vapor deposition apparatus of the present invention.
2 is a block diagram of a controller of the vapor deposition apparatus.
Fig. 3 is a diagram showing the characteristics of the deposition rate and the pressure difference between two pressure sensors in the vapor deposition apparatus.
4 is a configuration diagram of Embodiment 2 of a vapor deposition apparatus of the present invention.
5 is a configuration diagram of Embodiment 3 of a vapor deposition apparatus of the present invention.
Fig. 6 is a sectional view of principal parts of a modification of the material transport tube in the vapor deposition apparatus of the present invention.
Fig. 7 is a sectional view of principal parts of another modification of the material transport tube in the vapor deposition apparatus of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described based on drawing.

[Example 1]

1 is a configuration diagram of Embodiment 1 of a vapor deposition apparatus of the present invention. As shown in Fig. 1, evaporated particles (evaporated evaporation) on the surface (lower surface) of the glass substrate (an example of the vapor deposition member) 12 in a vacuum chamber (vacuum chamber / deposition vessel) 11 in a vacuum atmosphere. The vapor deposition chamber 13 which deposits a material, for example, organic EL material, is provided. In the vacuum chamber 11, a vacuum port (not shown) is formed in a vacuum atmosphere by a vacuum unit. The workpiece supporter 15 which supports the glass substrate 12 is provided in the upper part of the vacuum chamber 11. That is, the vapor deposition apparatus shown in the figure is an up-blow type (upposition) for depositing evaporated particles from the lower surface (deposited surface) of the glass substrate 12 supported by the work support 15. up-deposition)).

In the lower portion of the vacuum chamber 11, a material transport tube (an example of a path leading to evaporated particles to the glass substrate) 17 is provided to guide the evaporated particles to the glass substrate 12. 17a is an opening of the material transport tube 17, and the opening 17a is disposed to face the lower surface of the glass substrate 12. As shown in FIG. The material transport pipe 17 is provided with a flow rate control valve (an example of control means; control valve) 18 outside the vacuum chamber 11. The flow rate control valve 18 can control the flow rate of the evaporated particles by adjusting the opening degree.

A material storage container 19 is provided at an upstream end of the material transport pipe 17 outside the vacuum chamber 11. The material storage container 19 is provided with a crucible (not shown) for heating the vapor deposition material to form evaporated particles by energization by a heater. Evaporated particles are supplied from the crucible to the material transport pipe 17.

The first pressure sensor 21 capable of detecting the pressure inside the material transport pipe 17 in a portion downstream of the flow control valve 18 in the material transport pipe 17 inside the vacuum chamber 11. Is installed. The second pressure sensor 22 is provided in the vacuum chamber 11. The second pressure sensor 22 may be able to detect the pressure of a portion downstream from the first pressure sensor 21 inside the material transport pipe 17. As these pressure sensors 21 and 22, a thermally conductive pressure sensor using thermal conductivity by gas molecules can be used.

Although not shown in the figure, in addition to the material storage container 19 (crucible), the material transport pipe 17, the flow control valve 18, and the pressure sensors 21, 22 are heated by energization by a heater or the like. . By heating the pressure sensors 21 and 22 to make the temperature of the pressure sensors 21 and 22 higher than the ambient temperature, the evaporation particle adheres to the sensor part. This enables continuous measurement.

Deposition of the evaporated particles onto the glass substrate 12 by obtaining the flow rate Q of the evaporated particles by the pressure difference P1-P2 of the pressures P1 and P2 measured by the two pressure sensors 21 and 22. Rate R can be measured. The controller 24 which controls the flow control valve 18 and adjusts the opening degree of the material conveyance pipe 17 is provided so that the measured deposition rate R may become predetermined deposition rate Ra.

In detail, the controller 24 receives the pressure P1 measured by the first pressure sensor 21 and the pressure P2 measured by the second pressure sensor 22. Then, the valve opening command L (an electrical signal corresponding to 0 to 100% of the valve opening) is output from the controller 24 to the flow control valve 18. As shown in FIG. 2, the controller 24 includes a first subtractor 31, a deposition rate calculating unit 32, a second subtractor 33, and a PI controller 34. The first subtractor 31 calculates the pressure difference between the input pressure P1 and the pressure P2. The deposition rate calculator 32 calculates the flow rate Q of the evaporated particles flowing through the material transport pipe 17 by the pressure difference P1-P2 calculated by the first subtractor 31, and calculates the flow rate of the obtained evaporated particles. The deposition rate R of the evaporated particles on the glass substrate 12 is obtained by (Q). The second subtractor 33 calculates a deviation between the predetermined deposition rate R e set in advance and the deposition rate R obtained by the deposition rate calculating unit 32. The PI controller 34 outputs the valve opening command L so as to eliminate the deviation obtained by the second subtractor 33.

The deposition rate calculating unit 32 obtains the flow rate Q of the evaporated particles by the following equation (1), with the conductance of the material transport pipe 17 as C, and the deposition rate to the flow rate Q of the evaporated particles. As (R) is proportional, the proportional multiplier is F, and the deposition rate R is obtained by the following equation (2).

Q = C x (P1-P2). (One)

R = F x Q

 = G x (P1-P2). (2)

In addition, G = F x C

3 shows an example of the relationship between the deposition rate R and the pressure difference P1-P2.

The multiplier G is the material of the evaporated particles, the heating temperature of the evaporation material by the crucible in the material storage container 19, the length / material / diameter of the flow path of the material transport pipe 17, and the opening of the material transport pipe 17. It differs according to the distance between 17a and the glass substrate 12, etc., and it can obtain | require by experiment previously.

An example of the specific method of actually measuring the deposition rate R using the pressure sensors 21 and 22 is shown below.

a. A crystal vibrating film thickness sensor for measuring the deposited film thickness is provided next to the glass substrate 12, and deposited so that the indicated value X of the film thickness sensor becomes almost constant.

The deposition rate R at this time is determined by the following equation (3), where D is the deposition film thickness measured by the quartz crystal film thickness sensor and T is the deposition time.

R = Dｖ / T. (3)

8. The gain (gain) of the film thickness sensor is adjusted to correct the film thickness sensor value so that the indicated value X of the film thickness sensor is equal to the deposition rate R obtained by equation (3).

c. The deposition rate R is changed, and the pressures P1 and P2 are measured by the pressure sensors 21 and 22, and the pressure difference between the film thickness sensor indication value X and these pressure sensors 21 and 22. The relationship between (P1-P2), that is, multiplier G is obtained.

d. From the above relationship, the deposition rate R can be measured by the pressure difference P1-P2.

Based on the above configuration, two pressure sensors 21 and 22 are installed, and the pressure difference P1-P2 measured by the first pressure sensor 21 and the second pressure sensor 22 is obtained to transport the material. The flow rate Q of the evaporated particles passing through the pipe 17 is obtained. Since the flow rate Q of the evaporated particles is proportional to the deposition rate for the glass substrate 12, the deposition rate R is continuously measured accordingly. The flow rate control valve 18 is controlled to adjust the opening degree of the material transport pipe 17 so that the measured deposition rate R becomes the predetermined deposition rate RE. As a result, the flow rate Q of the evaporated particles is controlled at a predetermined flow rate corresponding to the predetermined deposition rate R e, so that the evaporated particles are deposited on the glass substrate 12 at the predetermined deposition rate R e.

As described above, according to the first embodiment, the relationship between the pressure difference (P1-P2) and the deposition rate (R) of the two pressure sensors (21, 22) is determined in advance by using a crystal oscillator sensor. The deposition rate R can be measured only by the pressure sensors 21 and 22 without using a crystal oscillator film thickness sensor. According to this, the vapor deposition rate R can be calculated | required correctly compared with the case where one conventional pressure sensor is provided. Therefore, evaporation particles can be deposited on the glass substrate 12 at an accurate predetermined deposition rate R e, that is, the deposition film can be formed at an accurate deposition rate, thereby reliably realizing the characteristics required for the deposition film. In addition, replacement of the crystal oscillator necessary when the crystal oscillator film thickness sensor is used becomes unnecessary, and the deposition rate R can be continuously measured without returning the vacuum chamber 11 to atmospheric pressure. Therefore, long time continuous vapor deposition becomes possible and the fall of productivity can be avoided.

[Example 2]

4 is a configuration diagram of Embodiment 2 of a vapor deposition apparatus of the present invention. In the second embodiment, the orifice 41 is newly provided in the material transport pipe 17 downstream of the flow control valve 18 with respect to the configuration of the vapor deposition apparatus in the first embodiment shown in FIG. The first pressure sensor 21 is attached upstream of the orifice 41 in the material transport tube 17, and the second pressure sensor 22 is attached upstream of the orifice 41.

By this configuration, similarly to the first embodiment, the pressure difference P1-P2 measured by the first pressure sensor 21 and the second pressure sensor 22 is obtained, and the deposition rate R is continuously measured. The flow rate control valve 18 is controlled so that the measured deposition rate R becomes the predetermined deposition rate R e, so that the opening degree of the material transport pipe 17 is adjusted, and the glass substrate (R e) is controlled at the predetermined deposition rate R e. Evaporated particles are deposited in 12). At this time, by providing the orifice 41, a pressure difference occurs before and after the orifice 41 due to the C (conductance) of the orifice 41, and the pressure downstream of the orifice 41 decreases, thus the orifice 41. ), The pressure difference (P1-P2) becomes larger as compared with the case where no) is provided, so that the flow rate Q of the evaporated particles passing through the material transport pipe 17 is more accurately measured.

As described above, according to the second embodiment, by providing the orifice 41, the flow rate Q of the evaporated particles passing through the material transport pipe 17 can be more accurately measured. Therefore, the deposition rate R can be measured more accurately and continuously, and the evaporation particles can be deposited on the glass substrate 12 at a predetermined deposition rate R e.

[Example 3]

5 is a configuration diagram of Embodiment 3 of a vapor deposition apparatus of the present invention. This vapor deposition apparatus is a vapor deposition apparatus which realizes co-deposition which forms two types of organic materials simultaneously, for example, in order to improve luminous efficiency at the time of manufacturing an organic EL device. Among these two kinds of organic materials, an organic material having a higher concentration when evaporating (hereinafter referred to as "material B"; an example of the first deposition material) and an organic material having a lighter concentration when evaporating (hereinafter, " Material S "; an example of the second deposition material having a small deposition amount compared to the deposition amount of the first deposition material) and the concentration ratio are 10 to 100: 1.

As shown in Fig. 5, a branch pipe 45 is provided in place of the material transport pipe 17 in the first embodiment. By the first evaporation particles of the material B guided by one branch 45A (an example of the first path) of the branch pipe 45 and the other branch 45B (an example of the second path). The second evaporated particles of the guided material S are combined at the confluence 45C (an example of the third path) of the branch pipe 45 and mixed, and these two kinds of evaporated particles are attached to the glass substrate 12. It is configured to.

At one branch 45A, a first flow rate valve 18A is provided as a first adjustment means for adjusting the opening degree of the branch 45A. The other branch 45B is provided with a second flow rate valve 18B as a second adjusting means for adjusting the opening degree of the branch 45B.

In the co-deposition in which these two kinds of organic materials are formed at the same time, an orifice is required in the path through which the material S passes. Specifically, an orifice 41 is provided in a portion downstream from the second flow rate valve 18B in the other branch 45B. This is to prevent backflow of material S and inflow of material B in the other branch 45B which arises because the pressure lowers with respect to material B when material S evaporates. The pressure on the upstream side of the orifice 41 is higher than the pressure on the downstream side.

At this time, the diameter of the orifice 41 is selected as follows. That is, before the co-deposition, the indication values of the pressure sensor for the opening degree of the valves 18A and 18B are grasped independently of the material B and the material S, respectively. In actual co-deposition, the diameter of the orifice 41 is selected so that the pressure on the upstream side is greater than the pressure on the downstream side than the orifice 41 provided on the other branch 45B through which the material S passes. .

A first material storage container 19A is provided at an upstream end of one branch 45A outside the vacuum chamber 11. 19 A of 1st material storage containers are provided with the crucible (not shown) which heats a 1st evaporation material and forms 1st evaporation particle | grains by the electricity supply by a heater. As a result, the first evaporated particles are supplied to one branch 45A. A second material storage container 19B is provided at an upstream end of the other branch 45B outside the vacuum chamber 11. The second material storage container 19B is provided with a crucible (not shown) for heating the second deposition material to form second evaporation particles by energization by a heater. As a result, the second evaporated particles are supplied to the other branch 45B.

The first pressure sensor 21 is provided in one branch 45A on the downstream side of the first flow rate valve 18A, and the second pressure sensor 22 is provided in the vacuum chamber 11. Alternatively, the second pressure sensor 22 may be provided at the confluence 45C of the branch pipe 45.

On the downstream side of the second flow valve 18B, the third pressure sensor 46 is provided in the other branch portion 45Ｂ on the upstream side of the orifice 41. The fourth pressure sensor 47 is provided in the other branch 45 Ｂ downstream of the orifice 41. These third pressure sensors 46 and the fourth pressure sensors 47 can be configured as thermally conductive pressure sensors similarly to the pressure sensors 21 and 22.

Although not shown in the drawing, the branch pipe 45, the two flow control valves 18A and 18B, the orifice 41, in addition to the two material storage containers 19A and 19B (the crucible) similarly to the first embodiment. And four pressure sensors 21, 22, 46, 47 are heated by energization by a heater or the like. By heating the pressure sensors 21, 22, 46, 47 and making the temperature of these pressure sensors 21, 22, 46, 47 higher than the ambient temperature, the evaporation particle adheres to the sensor part, and as a result, Continuous measurement is possible.

The pressure measured by the pressure sensors 21, 22, 46, 47 is input into the controller 24 '. Based on this input signal, the controller 24 'controls the opening degrees of the first flow rate valve 18A and the second flow rate valve 18B.

That is, the controller 24 ′ is formed by the pressure difference P1-P2 between the pressure P1 measured by the first pressure sensor 21 and the pressure P2 measured by the second pressure sensor 22. By obtaining the flow rate of one evaporation particle, the deposition rate R1 of the first evaporation particle on the glass substrate 12 is measured. Then, the valve opening command L1 is outputted to the first flow rate valve 18A so that the measured deposition rate R1 becomes the predetermined deposition rate Rae1, and the opening degree of one branch 45A is adjusted. In addition, the controller 24 ′ is controlled by the pressure difference P3-P4 between the pressure P3 measured by the third pressure sensor 46 and the pressure P4 measured by the fourth pressure sensor 47. The deposition rate R2 of the second evaporated particles on the glass substrate 12 is measured by obtaining the flow rate of the two evaporated particles. Then, the valve opening command L2 is output to the second flow rate valve 18B so that the measured deposition rate R2 becomes the predetermined deposition rate Rhe2, thereby adjusting the opening degree of the other branch 45B.

That is, the predetermined deposition rate is based on the pressure difference P1-P2 between the pressures P1 and P2 measured by the first pressure sensor 21 and the second pressure sensor 22 by the controller 24 '. The opening degree of one branch 45A is adjusted so as to be (Re1), and the flow rate of the first evaporated particles is adjusted.

The pressure difference occurs before and after the orifice 41, but the pressure difference P3- between the pressures P3 and P4 measured by the third pressure sensor 46 and the fourth pressure sensor 47 by the controller 24 '. Based on P4), the opening degree of the other branch 45B is adjusted so that it may become a predetermined | prescribed deposition rate (Re2), and the flow volume of 2nd evaporation particle | grains is adjusted. Moreover, by providing the orifice 41, the pressure P3 on the upstream side of the orifice 41 becomes higher than the pressure P4 on the downstream side. This prevents the reverse flow of the second evaporating particles in the other branch 45B and the inflow of the first evaporating particles from the one branch 45A to the other branch 45B.

As described above, according to the third embodiment, by providing four pressure sensors 21, 22, 46, and 47, the deposition rates R1 and R2 of the two deposition materials can be individually and accurately measured, and thus accurate Evaporated particles of each deposition material may be deposited on the glass substrate 12 at a predetermined deposition rate (Re1, Re2). That is, the vapor deposition film by each vapor deposition material can be formed in an accurate ratio / vapor deposition rate, respectively, and implements the characteristic requested | required of a vapor deposition film reliably.

Also, as in the known art, when the deposited film becomes thick, there is no need to replace the crystal oscillator of the crystal oscillator film thickness sensor. Therefore, continuous co-deposition in which two kinds of organic materials are formed at the same time can be performed for a long time, and a decrease in productivity can be avoided. In the case of co-deposition, each of the deposition rates R1 and R2 cannot be measured individually using the crystal vibrator sensor, but can be measured separately by using the pressure sensors 21, 22, 46 and 47. .

According to the third embodiment, as described above, the orifice 41 is provided to prevent the reverse flow of the second evaporation particles and the inflow of the first evaporation particles from the one branch 45A in the other branch 45B. can do.

[Modifications]

Although the orifice 41 is provided in the vapor deposition apparatus of FIG. 4, it replaces the orifice 41 as shown in FIG. 6, and is different from a part of the material transportation pipe 17 downstream of the flow control valve 18. As shown in FIG. A small path 51 having a smaller diameter than the portion is formed, the first pressure sensor 21 is attached upstream of the small path 51, and the second pressure sensor 22 is attached to the small path 51. It may be attached downstream. The small path 51 means that the length in the flow path direction is longer than the orifice 41. Similarly, also in the vapor deposition apparatus of Fig. 5, in place of the orifice 41, a small path having a diameter smaller than that of the other portion in a portion downstream from the second flow rate valve 18B in the other branch 45B ( 51 may be formed, and the third pressure sensor 46 may be attached upstream of the small path 51 and the fourth pressure sensor 47 may be attached downstream of the small path 51.

By providing the small path 51, the pressure difference before and after the small path 51 becomes large based on C (conductance) of the small path 51, whereby the flow rate can be obtained more accurately.

In Examples 1 to 3, the pressure sensors 21, 22, 46, 47 are provided directly in the paths 17, 45 kPa through which the deposited particles flow. Instead, as shown in Fig. 7, a space 52 other than the path through which evaporated particles pass is additionally formed in the paths 17 and 45B through which the evaporation molecules pass, and this space 52 is possible. It is formed as a static pressure space, and the pressure sensors 21, 22, 46, 47 can be provided in this space 52. As shown in FIG. As a result, further improvement of the measurement accuracy can be achieved.

In Examples 1-3, although it is set as the structure of the up blow type (upposition) which deposits evaporation particle from the lower surface (deposited surface) of the glass substrate 12 supported by the workpiece | work support tool 15 from below, It can also be set as the structure which does not select the direction of a direction, ie, the side deposition or the down deposition.

Claims (5)

A vapor deposition apparatus in which a vaporized vapor deposition material is attached to a vapor deposition member in a vacuum chamber,
A control means for adjusting the opening degree of the path is provided in a path leading the evaporated deposition material to the deposition member;
A first pressure sensor is provided in the path downstream of the adjustment means, and a second pressure sensor is provided in the path downstream of the first pressure sensor or in the vacuum chamber.
By determining the flow rate of the evaporated evaporation material by the pressure difference measured by these two pressure sensors, the deposition rate of the evaporated evaporation material with respect to the member to be deposited was measured, and the deposition thus measured. And a controller for adjusting the opening degree of the path by the adjusting means so that the rate becomes a predetermined deposition rate.
The method of claim 1,
An orifice is provided in the path downstream of the adjusting means, the first pressure sensor is installed upstream from the orifice, and the second pressure sensor is installed downstream from the orifice. .
The method of claim 1,
In a part of the path downstream of the adjusting means, a small path having a smaller diameter than the other parts in this path is formed,
A vapor deposition apparatus characterized by providing a first pressure sensor on an upstream side of the small path and a second pressure sensor on a downstream side of the small path.
In the vacuum chamber, the evaporated first deposition material guided by the first path and the second deposition material guided by the second path are smaller than the deposition amount of the evaporated first deposition material. A vapor deposition apparatus for joining and mixing in a path and attaching these two vaporized vapor deposition materials to a member to be deposited,
In the first path, the first adjusting means for adjusting the opening degree of the first path,
In the second path, a second adjusting means for adjusting the opening degree of the second path,
An orifice is provided in the second path downstream of the second adjusting means;
The first pressure sensor is provided in the first path downstream of the first adjusting means.
Install a second pressure sensor in the third path or in the vacuum chamber,
A third pressure sensor is provided in the second path downstream from the second adjusting means and upstream from the orifice,
The fourth pressure sensor is provided in the second path downstream of the orifice,
By measuring the flow rate of the evaporated first deposition material by the pressure difference measured by the first pressure sensor and the second pressure sensor to measure the deposition rate of the evaporated first deposition material to the deposition member The opening degree of the first path is adjusted by the first adjusting means so that the measured deposition rate is a predetermined deposition rate.
By measuring the flow rate of the evaporated second deposition material by the pressure difference measured by the third pressure sensor and the fourth pressure sensor to measure the deposition rate of the evaporated second deposition material to the deposition member And a controller for adjusting the opening degree of the second path by the second adjusting means so that the measured deposition rate becomes a predetermined deposition rate.
5. The method of claim 4,
Instead of the orifice provided in the second path downstream of the second adjusting means, a small path having a smaller diameter than that of the other part of the second path is formed in a part of the second path downstream of the second adjusting means. ,
And a third pressure sensor is provided upstream from the small path and a fourth pressure sensor is provided downstream from the small path.

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