JP5024075B2 - Vacuum deposition equipment - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus that vaporizes a deposition material in a vacuum atmosphere and deposits the deposition material at a predetermined deposition rate on the surface of a deposition target.

  The vacuum evaporation apparatus is arranged in such a manner that an evaporation source containing an evaporation material and an object to be evaporated are placed opposite to each other in a vacuum chamber, and the evaporation source is heated in a vacuum atmosphere by reducing the pressure in the vacuum chamber. Evaporation is performed by vaporizing and depositing the vaporized vapor deposition material on the surface of the vapor deposition target. As a general method for heating the evaporation source, an electron beam method in which the evaporation source is irradiated with accelerated electrons, or an electric current is passed through a resistor made of a refractory metal such as tungsten or molybdenum to generate heat, and this resistance There is a resistance heating method in which an evaporation source is heated using a body. Since the vaporized molecules of the vapor deposition material vaporized by these heating methods diffuse radially from the evaporation source, there are many vapor deposition materials that do not travel toward the vapor deposition target. Such a vapor deposition material that does not proceed toward the vapor deposition body does not adhere to the surface of the vapor deposition body, becomes an ineffective material that does not contribute to formation, lowers the deposition yield, and vapor deposition rate on the surface of the vapor deposition body. It will cause the decrease.

  Therefore, the cylindrical body is disposed so as to surround the space where the evaporation source and the deposition target in the vacuum chamber face each other, and the vapor deposition material vaporized from the evaporation source is deposited on the surface of the deposition target through the cylindrical body. In addition, a vacuum vapor deposition apparatus is known in which the inner surface of a cylindrical body is heated to a temperature at which no vapor deposition material is deposited (see, for example, Patent Document 1).

  FIG. 4 shows an example of the configuration of this type of vacuum deposition apparatus. In the vacuum evaporation apparatus, an evaporation source 103 that stores an evaporation material 102 and an evaporation target body 104 are arranged in the vacuum chamber 101 so as to face the evaporation source 103, and the evaporation source 103 and the evaporation target object 104 are separated from each other. A cylindrical body 105 is disposed between them. The evaporation source 103 includes an evaporation source heater 103a, and vaporizes the vapor deposition material 102. The tubular body 105 is provided with a tubular body heater 105a around it, and is heated to a temperature at which the vapor deposition material 102 is not deposited on the inner surface thereof. The vapor deposition material 102 vaporized from the evaporation source 103 proceeds in the direction of the vapor deposition target 104 while being reflected directly or on the inner surface of the cylindrical body 105, and is deposited on the surface of the vapor deposition target 104. Further, since the vapor deposition material 102 that does not travel directly in the direction of the vapor-deposited body 104 is also heated in the cylindrical body 105, the vapor deposition material 102 is not deposited on the inner side surface of the cylindrical body 105, resulting in reduced yield. Can be prevented.

Further, this vacuum vapor deposition apparatus includes a film thickness measuring unit 106 that measures the vapor deposition film thickness (deposition rate) per unit time by attaching the vaporized vapor deposition material 102 to a detection element 161 such as a crystal resonator, and a cylinder. A guide path 107 for guiding the vapor deposition material 102 from the solid body 105 to the film thickness measuring unit 106 and a controller 108 for controlling the temperature of the evaporation source 103 are provided. This vacuum deposition apparatus controls the heating temperature of the evaporation source heater 103a according to the deposition rate measured by the film thickness measuring unit 106 and adjusts the deposition rate of the deposition material 102 while performing so-called feedback control. A vapor deposition film is formed on the surface of 104.
JP 2004-59982 A

  However, in the above-described vacuum vapor deposition apparatus, a part of the vapor deposition material 102 that has advanced from the cylindrical body 105 to the guide path 107 adheres to the inner surface of the guide path 107 and flows into the film thickness measuring unit 106. In some cases, the film thickness measuring unit 106 cannot stably measure the deposition rate by changing the conductance of 102 over time. In addition, the film thickness measuring unit 106 may not operate stably due to the radiant heat from the heated tubular body 105, and an accurate deposition rate may not be measured. Furthermore, when the guide path 107 is provided in the vicinity of the evaporation source 103, when the vapor deposition material 102 bumps, the bulk vapor deposition material 102 such as droplets directly enters the surface of the detection element 161, and the film thickness measurement. The deposition rate measured by the unit 106 sometimes fluctuated. Therefore, in this vacuum vapor deposition apparatus, feedback control based on an accurate vapor deposition rate cannot be performed, and it is difficult to form a highly accurate vapor deposition film on the deposition target 104.

  The present invention solves the above-described problem, and can accurately measure an accurate deposition rate. By performing feedback control based on the deposition rate, highly accurate deposition can be performed on an object to be deposited. It aims at providing the vacuum evaporation system which can form a film | membrane.

In order to solve the above-mentioned problem, the invention of claim 1 is arranged such that an evaporation source for accommodating an evaporation material and an evaporation target are disposed in a vacuum chamber, and the evaporation material is disposed between the evaporation source and the evaporation target. In a vacuum vapor deposition apparatus that surrounds a cylindrical body heated to a temperature to be vaporized and vaporizes the vapor deposition material vaporized from the evaporation source through the cylindrical body on the surface of the deposition target, provided outside the cylindrical body, A film thickness measuring unit for measuring the film thickness of the vapor deposition by attaching a vapor deposition material vaporized from the evaporation source, and a connection between the internal space of the cylindrical body and the film thickness measuring unit are provided, and the evaporation A guide path that guides the vapor deposition material vaporized from a source to the film thickness measurement unit, and the guide path includes a bent portion and is provided with a guide path heater and heated to a temperature at which the vapor deposition material is vaporized. It is what is done.

  According to a second aspect of the present invention, in the vacuum vapor deposition apparatus according to the first aspect, the induction path is connected to the vicinity of the evaporation source on a side portion of the cylindrical body.

  According to a third aspect of the present invention, in the vacuum vapor deposition apparatus according to the first or second aspect, the flow rate of the vaporized vapor deposition material flowing to the film thickness measuring unit by opening and closing the guide path is adjustable. , Further comprising a guide path opening / closing means heated to a temperature at which the vapor deposition material is vaporized.

  According to the first aspect of the present invention, since the vapor deposition material is not deposited on the inner side surface of the guide path, the conductance of the vaporized vapor deposition material flowing from the cylindrical body to the film thickness measuring unit can be stabilized. Further, the distance between the cylindrical body and the film thickness measuring unit can be set so that the film thickness measuring unit is not easily affected by the radiant heat from the cylindrical body, and the film thickness measuring unit can be operated stably. . Furthermore, since the vapor deposition material bumped at the guide path does not directly enter the film thickness measuring section, the vapor deposition rate does not fluctuate due to bumping. For this reason, the film thickness measurement unit can stably measure the accurate deposition rate, and by performing feedback control that controls the heating temperature of the evaporation source based on this deposition rate, it is highly accurate for the deposition target. A vapor-deposited film can be formed.

  According to the invention of claim 2, since the relative amount of the vapor deposition material adhering to the detection element provided in the film thickness measurement unit is increased, the detection sensitivity in the film thickness measurement unit is improved, and the vapor deposition rate is measured more accurately. In addition, by performing feedback control based on this vapor deposition rate, a highly accurate vapor deposition film can be formed on the vapor deposition target.

  According to the invention of claim 3, the film thickness measuring unit is prepared by closing the guide path during the standby time in which the vapor deposition film is not formed on the deposition target and blocking the flow of the vapor deposition material to the film thickness measuring unit. Adhesion of the vapor deposition material to the detected element is reduced, the frequency of replacement of the detection element can be reduced, and the frequency of maintenance can also be reduced.

  A vacuum deposition apparatus according to a first embodiment of the present invention will be described with reference to FIG. The vacuum evaporation apparatus according to the present embodiment includes an evaporation source 3 that contains an evaporation material 2 in a vacuum chamber 1, an evaporation target 4 that deposits an evaporation material 2 vaporized from the evaporation source 3, an evaporation source 3, and an evaporation target. 4 and a cylindrical body 5 disposed between them. The evaporation source 3 includes an evaporation source heater 3 a that heats the vapor deposition material 2 and an appropriate temperature sensor (not shown) that detects the heating temperature of the vapor deposition material 2. The vacuum chamber 1 is configured so that the vapor deposition material 2 and the vapor deposition target 4 can be easily exchanged, and a vacuum pump (not shown) is connected to a side surface thereof. The deposition target 4 is disposed in the vacuum chamber 1 when performing a deposition operation.

  The cylindrical body 5 is a cylindrical member that is closed on one side and opened on the other side, and has a bottom 51 on which the evaporation source 3 is disposed, and an opening through which the vapor deposition material 2 vaporized toward the deposition target body 4 is discharged. A portion 52, a bottom portion 51, and an opening 52 are connected to each other, and a side portion 53 that guides the vaporized deposition material 2 to the deposition target 4 is provided. The bottom part 51 and the side part 53 are provided with a cylindrical heater 5a outside thereof, and are heated to a temperature at which the vapor deposition material 2 is vaporized. The vaporized vapor deposition material 2 is discharged from the opening 52 through the cylindrical body 5 and deposited on the surface of the vapor deposition target 4. Although FIG. 1 shows an example in which the vaporized vapor deposition material 2 is configured to travel upward and deposit on the vapor deposition target 4, the vacuum vapor deposition apparatus of the present embodiment is not necessarily limited to this configuration. For example, the cylindrical body 5 may be arranged in the lateral direction, and the vaporized vapor deposition material 2 may proceed in the lateral direction and be deposited on the deposition target body 4. Further, the cylindrical body 5 is not limited to the straight pipe type as illustrated, and may be, for example, a bent type.

  Further, the vacuum vapor deposition apparatus is provided outside the cylindrical body 5 to attach the vapor deposition material 2 and measure the vapor deposition film thickness (vapor deposition rate) per time, and the inside of the cylindrical body 5 The film thickness measuring unit 6 is provided so as to connect the space and the film thickness measuring unit 6 and guides the vapor deposition material 2 evaporated from the evaporation source 3 to the film thickness measuring unit 6. And a controller 8 for controlling the temperature of the evaporation source 3 in accordance with the deposition rate. The film thickness measurement unit 6 uses, for example, a crystal resonator film thickness meter including a crystal resonator as the detection element 61, and determines the deposition film thickness from the change in the vibration frequency of the crystal resonator accompanying the deposition of the deposition material 2. While detecting and measuring a vapor deposition rate, the control signal containing the information regarding a vapor deposition rate is output to the controller 8. FIG. The controller 8 includes a CPU, a memory, and the like, and controls the heating temperature of the evaporation source heater 3a according to the control signal received from the film thickness measurement unit 6 to adjust the evaporation rate of the evaporation material 2.

  An opening (hereinafter referred to as a side opening) 54 is formed in the side portion 53 of the cylindrical body 5, and the guide path 7 is connected to the side opening 54. The guide path 7 includes a bent portion 71, and the bent portion 71 is formed to have a bent angle that the evaporation source 3 and the film thickness measuring unit 6 do not face. In addition, the guide path 7 is provided with a guide path heater 7a on the outer periphery thereof, and is heated to a temperature at which the vapor deposition material 2 is vaporized.

  Next, operation | movement of the vacuum evaporation system of this embodiment is demonstrated. When the deposition material 2 is deposited on the deposition target body 4, first, the inside of the vacuum chamber 1 is reduced to a vacuum state using a vacuum pump, and the cylindrical body heater 5 a and the induction path heater 7 a are operated to form the cylindrical body 5. And the induction path 7 is heated. The temperature of the cylindrical body 5 and the guide path 7 is set to a temperature at which the vapor deposition material 2 is vaporized. Subsequently, the evaporation source heater 3a is operated to heat the vapor deposition material 2 accommodated in the evaporation source 3 to vaporize it. The vaporized vapor deposition material 2 travels in the direction of the vapor deposition target 4 while being reflected directly or on the inner side surface of the side portion 53, and is deposited on the surface of the vapor deposition target 4 arranged to face the vapor deposition material 2. At this time, the vapor deposition material 2 that does not proceed directly in the direction of the vapor deposition target 4 is heated in the cylindrical body 5, so that it flies to the vapor deposition target 4 in a gaseous state. Therefore, the vapor deposition material 2 is not deposited on the inner side surface of the side portion 53, and a decrease in yield can be prevented.

  Further, a part of the vaporized vapor deposition material 2 is attached to the detection element 61 of the film thickness measuring unit 6 from the side opening 54 through the guide path 7, and the film thickness measuring unit 6 performs vapor deposition film thickness per hour. (Deposition rate) is measured. Information on the measured deposition rate is converted into a control signal and input to the controller 8. The controller 8 adjusts the vapor deposition rate of the vapor deposition material 2 by controlling the power supplied to the evaporation source heater 3a in accordance with this control signal and adjusting the heating temperature for the vapor deposition material 2.

  Here, the induction path 7 is heated to a temperature at which the vapor deposition material 2 is vaporized by the induction path heater 7a. Therefore, the vapor deposition material 2 that has entered the guide path 7 does not accumulate on the inner surface of the guide path 7, and the conductance of the vaporized vapor deposition material 2 flowing from the cylindrical body 5 to the film thickness measuring unit 6 is stabilized. Moreover, since the induction path heater 7a is provided, the vapor deposition material 2 does not accumulate on the inner surface of the induction path 7 even if the induction path 7 is designed to be long. The film thickness measuring unit 6 can be set so as not to be easily affected by the radiant heat from the cylindrical body 5 or the evaporation source 3, and the film thickness measuring unit 6 can be operated stably. Therefore, the film thickness measuring unit 6 can stably measure an accurate deposition rate, and the controller 8 controls the heating temperature of the evaporation source heater 3a based on the deposition rate and adjusts the deposition rate of the deposition material 2. can do. Since the induction path 7 is made of a member that is much smaller than the cylindrical body 5, the radiant heat generated from the induction path heater 7a to heat the induction path 7 to a temperature at which the vapor deposition material 2 is vaporized is Compared to the radiant heat from the heater 5a, the amount of heat is small, and the influence on the operation of the film thickness measuring unit 6 is small.

  Further, since the guide path 7 includes the bent portion 71, even when the vapor deposition material 2 bumps at the evaporation source 3, the bulk vapor deposition material 2 such as droplets does not directly enter the film thickness measuring unit 6, and bumping occurs. The deposition rate does not fluctuate due to. By providing these configurations, the vacuum vapor deposition apparatus according to the present embodiment can stably measure an accurate vapor deposition rate. By performing feedback control based on the vapor deposition rate, the vacuum deposition apparatus 4 can perform the feedback control. Highly accurate vapor deposition film can be formed.

  Preferably, as shown in the figure, a flight path when the vaporized vapor deposition material 2 moves between the evaporation source 3 and the opening 52 of the cylindrical body 5 while flying toward the opening 52. A control member 55 for controlling the above is provided. The control member 55 is formed by providing a predetermined number of through holes in the same-shaped plate material on the inner periphery of the cylindrical body 5. By providing this control member 55, the concentration of the vapor deposition material 2 passing through the opening 52 can be made uniform, and the inner surface distribution of the film thickness of the vapor deposition film deposited on the vapor deposition target 4 can be made uniform. it can.

  Next, a vacuum deposition apparatus according to a second embodiment of the present invention will be described with reference to FIG. In the vacuum vapor deposition apparatus of the present embodiment, the guide path 7 is connected to the vicinity of the evaporation source 3 in the side portion 53 of the cylindrical body 5. Other configurations are the same as those in the first embodiment. The concentration of the vaporized vapor deposition material 2 is higher in the vicinity of the evaporation source 3 than in other portions in the cylindrical body 5. Therefore, by connecting the guide path 7 in the vicinity of the evaporation source 3, the relative amount of the vapor deposition material 2 adhering to the surface of the detection element (for example, a crystal resonator) provided in the film thickness measurement unit 6 increases, and the film The detection sensitivity in the thickness measuring unit 6 is improved. Thereby, the vacuum vapor deposition apparatus of this embodiment can measure a vapor deposition rate more correctly, and by performing feedback control based on this vapor deposition rate, a vapor deposition film with higher accuracy with respect to the vapor deposition target 4 Can be formed.

  Next, a vacuum evaporation apparatus according to a third embodiment of the present invention will be described with reference to FIG. The vacuum vapor deposition apparatus of this embodiment is formed so that the flow rate of the vaporized vapor deposition material 2 flowing to the film thickness measuring unit 6 by opening and closing the guide path 7 can be adjusted, and heated to a temperature at which the vapor deposition material 2 is vaporized. And a guide path opening / closing section 9 (guidance path opening / closing means). The guide path opening / closing section 9 is arranged in the vicinity of the side opening 54 and rotates or slides a plate-like member formed so as to match the opening diameter of the guide path 7 so that the opening degree of the guide path 7 is increased. Adjust arbitrarily. In addition, although it is desirable that the opening / closing operation of the guide path opening / closing unit 9 is automatically performed according to the operation state of the vacuum vapor deposition apparatus, it may be manually performed. Other configurations are the same as those in the first or second embodiment.

  Usually, in the vapor deposition operation using the vacuum vapor deposition apparatus, there is a waiting time during which the vapor deposition film is not formed on the vapor deposition target body 4 in order to replace the vapor deposition target body 4. In the present embodiment, during this waiting time, the guide path opening / closing unit 9 is operated to close the guide path 7 to block the flow of the vapor deposition material 2 into the film thickness measuring unit 6. The guide path 7 is opened only when vapor deposition is performed by feedback control. By doing so, the adhesion of the vapor deposition material 2 to the detection element 61 is reduced, the replacement frequency of the detection element 61 can be reduced, and the frequency of maintenance is also reduced. The present embodiment is suitably used in a configuration in which the vapor deposition material 2 is easily attached to the detection element 61 as in the second embodiment described above.

  As shown in the figure, when the guide path opening / closing section 9 is provided in the vicinity of the side opening 54, it is heated together with the cylindrical body 3 by the cylindrical body heater 3a, but is not necessarily limited to the vicinity of the side opening 54. Instead, it may be provided at any position on the guide path 7. Further, the guide path opening / closing section 9 may be configured to be heated together with the guide path 7 by the guide path heater 7a, or an opening / closing section heater (not shown) may be provided individually. Thus, the induction path opening / closing part 9 is heated to a temperature at which the vapor deposition material 2 is vaporized, so that the vapor deposition material 2 is not deposited on the surface thereof, and the open / close operation is not hindered.

  Hereinafter, examples of the present invention will be described more specifically by comparing with comparative examples.

Example 1
Example 1 corresponds to the first embodiment shown in FIG. As the cylindrical body 5, a rectangular parallelepiped having a side of an inner wall of 100 mm and a height of 230 mm was used, and the heating temperature of the cylindrical body 5 was set to 200 ° C. The side opening 54 to which the guide path 7 is connected was formed at a height of 80 mm from the evaporation source 3 and an opening diameter of 10 mm. The guide path 7 has an inner diameter of 10 mm which is the same as the diameter of the side opening 54, a length from the connecting part to the side opening 54 to the bent part 71 is 30 mm, and from the bent part 71 to the film thickness measuring part 6. Was formed to have a length of 30 mm. Further, the guide path 7 is connected so that the angle formed with the side portion 53 is 40 °, and the angle of the bent portion 71 is 130 °. For the film thickness measuring unit 6, a quartz oscillator film thickness meter was used.

(Example 2)
Example 2 corresponds to the second embodiment shown in FIG. The side opening 54 to which the guide path 7 is connected was formed at a height of 40 mm from the evaporation source 3. Other configurations are the same as those of the first embodiment.

(Example 3)
Example 3 corresponds to the third embodiment shown in FIG. A guideway opening / closing part 9 is provided in the vicinity of the side opening 54 to which the guideway 7 is connected. The taxiway 7 was closed. Other configurations are the same as those of the second embodiment.

(Comparative example)
The comparative example corresponds to the conventional vacuum deposition apparatus shown in FIG. The guide path 107 is connected to the side of the cylindrical body 105 at a height of 80 mm from the evaporation source 103 and has a diameter of 10 mm and a length of 30 mm. Further, the guide path 107 does not have a bent portion and is not provided with a heater or the like. Other configurations are the same as those of the first embodiment.

  About Example 1 thru | or Example 3 and the comparative example, the vapor deposition material 2 and the to-be-deposited body 4 were arrange | positioned, respectively, and the vapor deposition experiment was done. As the vapor deposition material 2, tris (8-hydroxyquinolinate) aluminum complex (“Alq3” manufactured by Dojindo Laboratories Co., Ltd.) was used. A glass substrate (100 mm × 100 mm × thickness 0.7 mm) was used as the deposition object 4, and this glass substrate was disposed horizontally at a distance of 250 mm from the evaporation source 3. After placing the glass substrate, the deposition rate was set to 4 Å / s and the formed film thickness was set to 100 nm, and the deposition experiment was repeated 20 times. In addition, between each vapor deposition experiment, there was a time (standby time) during which the vapor deposition film was not formed on the glass substrate for about 7 minutes due to the glass substrate replacement work, and the vapor deposition rate during the standby time was set to 2 liters / s. The film thickness of the vapor deposition film formed in each vapor deposition experiment was measured using a stylus type step gauge.

  As shown in Table 1, in Example 1 to Example 3, the difference in film thickness of the formed vapor deposition film is small compared to the comparative example. This result shows that the reproducibility of the deposited films formed in Examples 1 to 3 is high. That is, in the first to third embodiments, the guide path 7 is heated, and the influence of the radiant heat from the cylindrical body 5 on the film thickness measuring unit 6 is reduced. An accurate vapor deposition rate can be stably measured, and by performing feedback control based on the vapor deposition rate, a highly accurate vapor deposition film can be formed on the glass substrate. In addition, compared with Example 1, Example 2 and Example 3 have higher reproducibility of the formed deposited film. This is because, by connecting the guide path 7 in the vicinity of the evaporation source 3, the detection sensitivity in the film thickness measurement unit 6 is improved, and the deposition rate can be measured more accurately, and feedback control based on this deposition rate is performed. This shows that a highly accurate deposited film can be formed on a glass substrate. Further, in the comparative example, the deposition rate fluctuated due to bumping of the vapor deposition material 2, whereas in the first to third embodiments, the bending path 71 was provided in the guide path 7, so that the vapor deposition rate due to bumping. There was no change.

  In Example 2 and Example 3, the guide path 7 is connected in the vicinity of the evaporation source 3 and the vapor deposition material 2 is easily attached to the detection element 61 (quartz crystal resonator). By providing the guide path opening / closing portion 9, the number of times of exchanging the crystal resonator is smaller than that in the second embodiment. In addition, although Example 3 adds the guidance path opening-and-closing part 9 to the structure of Example 2, since the frequency | count of replacement | exchange of the crystal oscillator in Example 3 is fewer than Example 1, it is clear, Even when the guide path opening / closing section 9 is added to the configuration of the first embodiment, the number of times of exchanging the crystal unit can be reduced.

  INDUSTRIAL APPLICABILITY The present invention is suitably used for a vapor deposition apparatus for forming a vapor deposition film using an organic material that easily causes bumping as a vapor deposition material, for example, a vapor deposition apparatus for forming a light emitting layer of an organic electroluminescence (organic EL) element. A vapor deposition apparatus for forming a light emitting layer of an organic EL element includes at least two evaporation sources 3 for vaporizing a guest vapor deposition material, a host vapor deposition material, and the like, and the controller 8 heats the evaporation sources 3. The temperature can be individually controlled. That is, in the vacuum vapor deposition apparatus of the present invention, the number of evaporation sources 3 and the type of vapor deposition material accommodated in the evaporation source 3 are not particularly limited.

The partial cross section block diagram of the vacuum evaporation system which concerns on the 1st Embodiment of this invention. The partial cross section block diagram of the vacuum evaporation system which concerns on the 2nd Embodiment of this invention. The partial cross section block diagram of the vacuum evaporation system which concerns on the 3rd Embodiment of this invention. The partial cross section block diagram of the conventional vacuum evaporation system.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Evaporation material 3 Evaporation source 3a Evaporation source heater 4 Deposited body 5 Tubular body 5a Tubular body heater 53 Side part 6 Film thickness measurement part 7 Guidance path 7a Guidance path heater 71 Bending part 9 Guidance path opening / closing part ( Taxiway opening / closing means)

Claims (3)

An evaporation source that accommodates the vapor deposition material in a vacuum chamber and a vapor deposition target are disposed, and a space between the evaporation source and the vapor deposition target is surrounded by a cylindrical body that is heated to a temperature at which the vapor deposition material is vaporized. In a vacuum deposition apparatus for depositing a vapor deposition material evaporated from the evaporation source on the surface of the deposition target through the cylindrical body,
A film thickness measuring unit that is provided outside the cylindrical body and measures the vapor deposition film thickness by attaching the vapor deposition material vaporized from the evaporation source,
Provided between the internal space of the cylindrical body and the film thickness measurement unit, and a guide path for guiding the vapor deposition material evaporated from the evaporation source to the film thickness measurement unit,
The induction path includes a bent portion and a induction path heater, and is heated to a temperature at which the vapor deposition material is vaporized.   The vacuum vapor deposition apparatus according to claim 1, wherein the guide path is connected to the vicinity of the evaporation source on a side portion of the cylindrical body.   The guide path is further formed to be adjustable so that the flow rate of the vaporized vapor deposition material flowing to the film thickness measurement unit by opening and closing the guide path, and further includes a guide path opening / closing means that is heated to a temperature at which the vapor deposition material is vaporized. The vacuum evaporation apparatus according to claim 1 or 2, characterized by the above.

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