JP2008075095A - Vacuum deposition system and vacuum deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a film of a plurality of layers on the member to be vapor-deposited in a short vapor deposition time in one film deposition chamber. <P>SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vacuum deposition apparatus and a vacuum deposition method in which a plurality of materials are deposited on a deposition target member to form a plurality of layers in one deposition chamber.

For example, in an organic EL element, a transparent electrode is formed on a glass substrate, a plurality of organic material films such as a light emitting layer are formed on the transparent electrode, and a back electrode is formed on these organic material films. For example, Patent Document 1 is disclosed as an apparatus for manufacturing this organic EL element. In this manufacturing apparatus, a plurality of vacuum transport chambers are provided via a delivery chamber, a transport robot for transporting a substrate is disposed in these vacuum transport chambers, and a plurality of film forming chambers are provided around each vacuum transport chamber. A film is formed on the substrate in each film formation chamber while the substrate is sequentially taken in and out by the transfer robot.
JP20046311

  However, every time a single layer film is formed, it is necessary to take out the glass substrate from the film formation chamber by the transfer robot and replace it with the next film formation chamber. There is a problem that the tact time cannot be shortened because it is restricted by the film forming process and also requires a transfer time.

  The present invention solves the above problems and provides a vacuum deposition apparatus and a vacuum deposition method that can efficiently form a plurality of layers of films on a member to be deposited in one deposition chamber, and that can shorten the tact time. With the goal.

  The invention according to claim 1 is a vacuum vapor deposition apparatus that forms a plurality of layers of films by vapor-depositing a plurality of materials on a vapor deposition member in a single film deposition chamber. An evaporation cell for disposing a material discharge portion disposed opposite to a surface and providing a material discharge portion for discharging the material, a plurality of dispersion containers having discharge ports for discharging the material provided in the material discharge portion, and the dispersion container, A plurality of evaporation cells for evaporating the material having a common temperature range between the evaporation temperature of the material and the thermal decomposition temperature in at least one of the dispersion containers. Each of the dispersion containers is provided with a container heating device for heating to a predetermined temperature between the evaporation temperature and the thermal decomposition temperature of the material to be released.

  According to a second aspect of the present invention, in the configuration of the first aspect, the vapor deposition member is fixedly disposed on the holder, and the plurality of dispersion containers are stacked in a direction approaching and separating from the vapor deposition surface of the vapor deposition member. A plurality of discharge ports for discharging the material of the foremost stage dispersion container are provided at predetermined intervals on the surface side facing the vapor deposition surface of the foremost deposition member in the foremost stage dispersion container closest to the deposition target member. A plurality of discharge nozzles that open and have a discharge port open on the surface side of the frontmost dispersion container are provided in the dispersion container on the side farther than the frontmost dispersion container. It is a thing.

A third aspect of the present invention is the arrangement according to the first or second aspect, wherein the dispersion container having a lower heating temperature of the container heating device is arranged on the front side.
According to a fourth aspect of the present invention, in the configuration according to any one of the first to third aspects, a dispersion container for releasing the host material and a dispersion container for discharging the dopant material are provided, and the host material is supplied from the two dispersion containers. And the dopant material are emitted at the same time.

  According to a fifth aspect of the present invention, in the configuration according to any one of the first to fourth aspects, a shutter device capable of selectively opening and closing the discharge port of each dispersion container is provided, and the first dispersion container is provided in the shutter device. A shutter plate having an opening for opening and closing that is slidable along the surface of the dispersion container and can selectively open the discharge port is provided on the vapor deposition surface side of the discharge port.

  According to a sixth aspect of the present invention, in one film forming chamber having a plurality of dispersion containers, a plurality of vapor deposition steps are performed in which a material is discharged from a discharge port of one or a plurality of the dispersion containers and vapor-deposited on a deposition target member. When forming a multi-layered film on a member to be vapor-deposited, a plurality of materials having a common temperature range between an evaporation temperature and a decomposition temperature are discharged from at least one of the dispersion containers in a plurality of vapor deposition steps, and the dispersion is performed. The container is heated to a predetermined temperature between the evaporation temperature and the pyrolysis temperature of the material to be released.

  According to the first aspect of the present invention, one or a plurality of dispersion containers are selectively used while the dispersion container is heated to a predetermined heating temperature between the evaporation temperature and the decomposition temperature of the material by the container heating device. By discharging the material from the discharge port to the member to be vapor-deposited and repeating this, a plurality of layers of films can be formed on the vapor deposition surface of the member to be vapor-deposited. Therefore, compared with the conventional configuration in which the film formation chamber is replaced for each layer of film, the transfer time to the film formation chamber is not required, and the working time can be greatly shortened. In addition, it is possible to efficiently form a multi-layer film. In addition, by sharing a plurality of materials in one dispersion container, the number of dispersion containers can be reduced, the structure can be simplified, and the film formation chamber can be made compact. Furthermore, by heating a dispersion container that shares a plurality of materials to a predetermined heating temperature that is common between the evaporation temperature and the decomposition temperature of each material, temperature change control according to the material becomes unnecessary, and The material can be changed in a short time, and the tact time can be reduced.

  According to the second aspect of the present invention, the vapor deposition member and the discharge port are arranged in a fixed state, the dispersion containers are arranged in a plurality of stages, and the discharge of the dispersion container on the side separated from the vapor deposition member (the rear stage side) is performed. By opening the nozzle through the front-side dispersion container and opening the surface of the front-most dispersion container, the discharge ports of the respective dispersion containers can be arranged at appropriate positions to form a uniform film. .

  According to invention of Claim 3, since the dispersion container with low heating temperature was arrange | positioned at the side which approaches a vapor deposition member, the radiant heat to the vapor deposition member side can be reduced, and it is on the front surface of a vapor deposition member. In addition to being able to prevent thermal deformation, expansion, and elongation of the mask to be disposed, it is possible to achieve an effect of preventing deterioration of the deposited film of the deposition target member.

According to the fourth aspect of the present invention, the film can be formed on the deposition target member by simultaneously releasing the host material and the dopant material from a plurality of dispersion containers with respect to one film.
According to the fifth aspect of the present invention, the selected material can be discharged by selectively opening and closing the discharge port by sliding the shutter plate having the opening / closing opening.

  According to the sixth aspect of the present invention, a plurality of materials having a common heating temperature range between the evaporation temperature and the decomposition temperature are used in a single dispersion container, and the predetermined temperature is determined without changing and controlling the heating temperature of the dispersion container. A plurality of materials are released in a plurality of vapor deposition steps while heating at the heating temperature. This prevents an increase in tact time due to the change control of the heating temperature according to the material, enables efficient film forming work, reduces the number of dispersion vessels, simplifies the structure, and forms the film. The chamber can be made compact.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Embodiment 1]
As shown in FIG. 1, this vacuum deposition apparatus is an up-deposition type device that discharges a material upward from the lower part and deposits it on, for example, a glass substrate (deposition member) B disposed on the upper part. In the film forming chamber 4, for example, a plurality of organic EL layers of the organic EL element A are sequentially formed as shown in FIG. The organic EL element A is obtained by forming a plurality of organic EL layers D1 to D4 between a transparent electrode C and a back electrode E formed on a substrate B. The organic EL layers D1 to D4 are, for example, transparent electrodes C A hole injection layer D1, a hole transport layer D2, a light emitting layer D3, and an electron transport layer D4 are stacked from the side. An electron injection layer may be formed between the electron transport layer D4 and the back electrode E.

  As shown in FIG. 3, a manufacturing apparatus for manufacturing the organic EL element A includes a vacuum transport chamber 1 having a predetermined vacuum specification, and a carry-in chamber that is provided at one end of the vacuum transport chamber 1 and carries a substrate B therein. (Load / lock chamber) 2, a substrate unloading chamber (unload / lock chamber) 3 provided at the other end for unloading the substrate B, and both sides of the vacuum transport chamber 1 on the loading chamber 2 side. The film forming chambers 4 and 4 for forming the organic EL layer and the electrode forming chambers 5 and 5 that are provided on both sides of the vacuum transport chamber 1 on the side of the unloading chamber 3 to form electrodes. In the vacuum transport chamber 1, a transfer robot 6 for taking in and out the substrate B is disposed.

  As shown in FIG. 1, the film forming chamber 4 is held in a predetermined vacuum state, and a substrate holder (holder) 7 for holding the substrate B on which the transparent electrode C is formed on the deposition surface (lower surface) is fixed. A mask 8 is provided on the vapor deposition surface of the substrate B provided on the upper portion and held by the substrate holder 7.

  As shown in FIGS. 1, 4, and 5, a material discharge portion 11 is provided at the lower portion of the film forming chamber 4 so as to face the vapor deposition surface of the substrate B. The first to third dispersion containers 12A to 12C for dispersing (diluting) and releasing them are disposed so as to overlap each other in a vertical direction that opens a predetermined space and approaches and separates from the substrate B. In the uppermost first dispersion container (frontmost dispersion container) 12A, a plurality of first discharge nozzles 13A project from the upper surface with a predetermined interval and a first discharge port 13a is opened. In addition, a plurality of second discharge nozzles 13B project from the upper surface of the second dispersion container 12B in the middle stage, and these second discharge nozzles 13B are provided with a first dispersion from a penetrating portion 14A penetrating vertically through the first dispersion container 12A. It protrudes from the upper surface of the container 12A, and its second discharge port (discharge port) 13b is opened on the same plane as the first discharge port 13a in the vicinity of the first discharge nozzle 13A. Further, a plurality of third discharge nozzles 13C project from the upper surface of the lowermost third dispersion container (the rear-stage and last-stage dispersion container) 12C, and these third discharge nozzles 13C are connected to the first dispersion container 12A and the first dispersion container 12A. The first discharge port 13a and the second discharge port 13b are protruded from the through portions 14A and 14B of the second distribution vessel 12B to the upper surface of the first distribution vessel 12A and in the vicinity of the first discharge nozzle 13A and the second discharge nozzle 13B. A third discharge port 13c is opened on the same plane. Accordingly, the discharge port group 15 including the first to third discharge ports 13a to 13c is disposed on the upper surface of the first dispersion container 12A with a predetermined interval.

  Although the first discharge nozzle 13A protrudes from the upper surface of the first dispersion container 12A, the first discharge port may be formed directly on the upper surface plate of the first dispersion container 12A without providing the first discharge nozzle 13A. In this case, the upper end surfaces of the second and third discharge nozzles 13B and 13C are flush with the upper surface of the first dispersion vessel 12A, and the second and third discharge ports 13b and 13c are opened. .

  Further, as shown in FIG. 4, tubular members 14a and 14b are fixed to the through portions 14A and 14B of the second and third dispersion containers 12B and 12C, and the tubular members 14a and 14b are connected to the second and third portions. A heat insulating member 16 is inserted between the discharge nozzles 13B and 13C.

  Further, on the outer surfaces of the first to third dispersion containers 12A to 12C, for example, a sheath heater is used to prevent the material from solidifying and adhering by heating the first to third dispersion containers 12A to 12C to a predetermined heating temperature described later. The container heating devices 17A to 17C are respectively attached. Further, heat insulating plates 18 for preventing heat conduction and radiant heat are respectively provided on the upper surface of the first dispersion container 12A, the space of the first dispersion container 12A and the second dispersion container 12B, and the space of the second dispersion container 12B and the third dispersion container 12C. Has been placed.

  A shutter device 20 that can selectively open and close the first to third discharge ports 13 a to 13 c is provided on the upper surface of the material discharge unit 11. As shown in FIGS. 6 and 7, the shutter device 20 includes a shutter plate 21 that is slidable in the horizontal direction in the vicinity of the first to third discharge ports 13a to 13c on the upper surface of the first dispersion container 12A. The shutter operating device 22 that moves the shutter plate 21 along the horizontal plane in the direction of the arrow, and although not shown, the first to third discharge ports 13a are cooled by cooling the shutter plate 21 below the evaporation temperature of all the materials used. The evaporation material from ˜13c is attached to block the flow to the substrate B side, and the shutter cooling means blocks heat radiation from the first dispersion vessel 12A. The shutter operating device 22 slides the shutter plate 21 in six steps i to vi in a linear direction to selectively open and close the first to third discharge ports 13a to 13c. For example, a step-like opening / closing opening 21 a is formed for each nozzle group 15.

  As shown in FIG. 7A, the opening / closing opening 21a closes all the first to third discharge ports 13a to 13c at the i position. As shown in FIG. 7B, the first discharge port 13a is opened and the second and third discharge ports 13b and 13c are closed at the position ii. As shown in FIG. 7C, the first discharge port 13a and the second discharge port 13b are opened at the position iii, and the third discharge port 13c is closed. As shown in FIG. 7 (d), the second discharge port 13b is opened at the iv position and the first discharge port 13a and the third discharge port 13c are closed, and as shown in FIG. 7 (e), at the v position. The second discharge port 13b and the third discharge port 13c are opened and the first discharge port 13a is closed. Further, as shown in FIG. 7F, the third discharge port 13c is opened at the vi position, and the first discharge port 13a and the second discharge port 13b are closed. Of course, the opening / closing opening 21a can be formed so as to open all of the first to third discharge ports 13a to 13c.

  A material supply unit 31 that evaporates the material is provided outside the film formation chamber 4. The material supply unit 31 includes first to third evaporation cells 32A to 32C that evaporate different materials or the same material and supply them to any of the first to third dispersion vessels 12A to 12C. The first and third material introduction pipes 33A and 33C, whose outlet ends are connected to the first and third dispersion vessels 12A and 12C, respectively, and penetrate the bottom wall of the film forming chamber 4, are connected to the first and third on-off valves ( Opening / closing means) are connected to the first and third evaporation cells 32A and 32C via 34A and 34C, respectively. In addition, the second material introduction pipe 33B whose outlet end is connected to the second dispersion vessel 12B and penetrates the bottom wall of the film forming chamber 4 is provided with the 2-1 to 2-3 open / close valves (open / close means) 34Ba to 34Bc. The first to third branch pipes 35a to 35c interposed are connected to the 2-1 to 2-3 evaporation cells 32Ba to 32Bc, respectively. As indicated by phantom lines, the first material introduction pipe 33A or the third material introduction pipe 33C can be provided with another evaporation cell via a branch pipe in which an on-off valve is interposed.

  The first to third on-off valves 34A to 34C, the first to third branch pipes 35a to 35c, and the first to third material introduction pipes 33A to 33C have heating devices (not shown) that prevent the material from solidifying and adhering. Each) is provided.

  In the film forming chamber 4, a crystal resonator 41 </ b> A for detecting a deposition rate is disposed near the side of the substrate holder 7, and the detection value of the crystal resonator 41 </ b> A is output to the film thickness sensor 42 and evaporated on the substrate B. The film thickness is detected. Further, the first to third quartz resonators 41B to 41a for detecting the deposition rate are provided facing the detection nozzles 12a to 12c that are provided on the side portions of the first to third dispersion containers 12A to 12C and discharge a part of the material. 41D is arranged, and the detection values of the first to third crystal resonators 41B to 41D are output to the film thickness sensor 42 to detect the deposition rate in the first to third dispersion vessels 12A to 12C. ing.

  Therefore, the vapor deposition controller 43 opens the first to third on-off valves 34A to 34C, introduces the material into the first to third dispersion vessels 12A to 12C, and discharges the material released from the detection nozzles 12a to 12c. The vapor deposition control device 43 detects the vapor deposition rates of the first to third dispersion vessels 12A to 12C detected by the first to third crystal resonators 41B to 41D and output from the film thickness sensor 42 by the vapor deposition control device 43. The opening degree of the first to third on-off valves 34A to 34C is controlled. Furthermore, when the vapor deposition rate of the first to third dispersion vessels 12A to 12C reaches the target value, the vapor deposition control device 43 opens the first to third discharge ports 13a to 13c selectively by the shutter operating device 22, and the material is changed. The organic EL layers D1 to D4 are formed on the substrate B by being discharged from the first to third dispersion containers 12A to 12C. Then, the film thickness of the substrate B is detected by the crystal oscillator 41A in the vicinity of the side portion of the substrate holder 7 via the film thickness sensor 42. When this film thickness reaches a predetermined thickness, the deposition controller 43 operates the shutter. The device 22 is driven to close the first to third discharge ports 13a to 13c, and the first to third on-off valves 34A to 34C are closed.

  Here, the relationship between the number of 1st-3rd dispersion | distribution containers 12A-12C and the material to vapor-deposit is demonstrated. In this vacuum deposition apparatus, the first to third on-off valves 34A to 34C, the first to third branch pipes 35a to 35c, the first to third material introduction pipes 33A to 33C, and the first corresponding to the materials to be used. The third dispersion containers 12A to 12C are heated so as to maintain appropriate heating temperatures (evaporation temperature + predetermined temperature) to (decomposition temperature-predetermined temperature) at which the material does not deteriorate while preventing the solidification and solidification of the material, respectively. Is done. Here, if a dispersion container is provided for each material to be used, the number of dispersion containers is increased, the film forming chamber is enlarged, and the structure of the material discharge part is complicated. On the other hand, when dissimilar materials are sequentially released by sharing a single dispersion container, it is necessary to control the temperature of the material introduction tube, dispersion container, etc. to the appropriate heating temperature for each material used. There is. When the heating temperature is controlled each time the material is changed in this way, there is a problem that it takes time to switch the material and the tact time becomes long.

  Accordingly, in the present invention, the first to third on-off valves 34A to 34C, the first to third branch pipes 35a to 35c, the first to third material introduction pipes 33A to 33C, and the first to third dispersion containers for each material. In order to keep the heating temperatures of 12A to 12C constant without changing the number of dispersion vessels, select a plurality of materials or a single material with an appropriate heating temperature between the evaporation temperature and the decomposition temperature. Grouped, and these groups are distributed to each dispersing container.

  That is, as shown in FIG. 8 (a), for example, an appropriate heating temperature range of five materials a to e used in this vacuum vapor deposition apparatus [a temperature that maintains an evaporation state and does not thermally decompose (evaporation temperature + predetermined temperature) ~ (Decomposition temperature-Predetermined temperature)], the material a is 210 ° C to 260 ° C, the material b is 300 ° C to 340 ° C, the material c and the material d (the amount of use increases, so the same material is used for each layer) Is 270 ° C. to 340 ° C., and the material e is 390 ° C. to 450 ° C. In this case, when the five materials a to e are grouped, the material a has a lower evaporation temperature and decomposition temperature than the other materials b to e. Further, since the materials b to d have a common temperature range of 300 to 340 ° C., the three materials b to d are grouped. Furthermore, since the evaporating temperature and the decomposition temperature of the material e are higher than those of the other materials a to d, the material e is grouped independently. The material a is distributed to the first dispersion container 12A, the materials b to d are distributed to the second dispersion container 12B, and the material e is distributed to the third dispersion container 12C.

  In the first embodiment, the material a is evaporated by heating to 220 ° C. in the first evaporation cell 32A. Then, the first material introduction pipe 33A and the first on-off valve 34A are heated to 240 ° C., and further, the first dispersion container 12A is heated to 250 ° C. by the container heating device 17A to discharge the material a from the first discharge port 13a. Further, the material b is evaporated by heating to 310 ° C. in the 2-1 evaporation cell 32Ba. Then, the materials cd are evaporated by heating to 280 ° C. in the 2-2 evaporation cell 32Bb and the 2-3 evaporation cell 32Bc, respectively. Further, the second material introduction pipe 33B, the 2-1 to 2-3 open / close valves 34Ba to 34Bc, and the first to third branch pipes 35a to 35c are heated to 320 ° C., and further, the second dispersion container is provided by the container heating device 17B. 12B is heated to 330 ° C., and materials b to d are discharged from the second discharge port 13b. Further, the material e is evaporated by heating to 400 ° C. in the third evaporation cell 32C. Then, the third material introduction pipe 33C and the third on-off valve 34C are heated to 410 ° C., and the third dispersion container 12C is heated to 420 ° C. by the container heating device 17C to discharge the material e from the third discharge port 13c.

  Here, the material a is, for example, Coumarin C545T, a dopant material that forms the light emitting layer D3, and the material b is, for example, α-NPD, a material that forms the hole transport layer D2. Materials c and d are, for example, Alq3, a host material for forming the light emitting layer D3, and a material for forming the electron transport layer D4, and a material e is, for example, CuPc, a material for forming the hole injection layer D1.

  Here, among the first to third dispersion containers 12A to 12C, the one having a low heating temperature heated by the container heating devices 17A to 17C is arranged at the uppermost stage approaching the substrate B. This is because if the radiant heat radiated from the material emitting unit 11 to the substrate B is large, the accuracy of the deposition position by the mask is reduced due to thermal expansion even if the mask is arranged with high accuracy by the holding unit (alignment) of the substrate B. At the same time, the deposited film is heated by receiving radiant heat and deteriorates. Further, it is desirable that the temperature of the first dispersion container 12A that faces the substrate B and is closest to the substrate B is lower, and the temperature difference between the first dispersion container 12A and the second dispersion container 12B adjacent to the first dispersion container 12A is less affected by the temperature. Therefore, in the first embodiment, the material a having the lowest heating temperature faces the substrate B and is closest to the first dispersion vessel 12A, and the materials b to d having the next lowest heating temperature are the second dispersion vessel 12B. The material e having the highest heating temperature is distributed to the third dispersion containers 12C that are the farthest from the substrate B.

Next, the vapor deposition operation will be described.
1. (Deposition preparation step) The substrate B on which the transparent electrode C is formed on the deposition surface is carried into the film formation chamber 4 by the transfer robot 6 and fixed to the substrate holder 7. Further, a mask 8 is attached to the vapor deposition surface of the substrate B, and the film forming chamber 4 is closed.

  Here, the first to third branch pipes 35a to 35c, the first to third material introduction pipes 33A to 33C, the first to third on-off valves 34A to 34C, and the first to third dispersion containers 12A to 12C are respectively appropriate. Heated to heating temperature.

  2. (Hole Injection Layer Deposition Step) In the third evaporation cell 32C, the material e of the hole injection layer D1 is heated to the evaporation temperature and evaporated. Then, the vapor deposition controller 43 opens the third on-off valve 34C and introduces the material e into the third dispersion container 12C from the third material introduction pipe 33C. Further, the material e emitted from the third detection tube 12c is detected by the film thickness sensor 42 via the third quartz oscillator 41D for detecting the deposition rate, and the deposition rate of the material e in the third dispersion vessel 12C is predetermined. When the value is reached, the vapor deposition control device 43 drives the shutter actuating device 22 of the shutter device 20, slides the shutter plate 21 from the i position to the vi position to open the third discharge port 13c, and from the third discharge port 13c. The material e is discharged toward the substrate B, and deposition of the hole injection layer D1 is started.

  When the film thickness of the hole injection layer D1 detected by the film thickness sensor 42 by the crystal oscillator 41A for film thickness detection reaches a predetermined thickness, the deposition control device 43 returns the shutter plate 21 to the i position and releases the third release. The outlet 13c is closed, the third on-off valve 34C is closed, and the heating temperature of the third evaporation cell 32C is lowered below the evaporation temperature of the material e. Further, the material e remaining in the third material introduction pipe 33C and the third dispersion container 12C that is continuously heated is discharged from the gap between the third detection pipe 12c, the third discharge port 13c, and the shutter plate 21. After confirming that the material e has been lost by the film thickness sensor 42 via the third crystal unit 41D, the process proceeds to the next step.

  Note that, in the film forming chamber 4, suction is always performed by a vacuum pump (not shown), and surplus material e discharged from the third detection tube 12 c is moved to the substrate B side by an adhesion preventing member (not shown). It does not flow and is discharged from the film forming chamber 4 by the suction pump. The same applies to the steps 3 to 5.

  3. (Hole Transport Layer Deposition Step) In the 2-1 evaporation cell 32Ba, the material b of the hole transport layer D2 is heated to the evaporation temperature and evaporated. Then, the vapor deposition control device 43 opens the 2-1 on-off valve 34Ba and introduces the material b into the second dispersion vessel 12B through the first branch pipe 35a and the second material introduction pipe 33B. Further, the material b emitted from the second detection tube 12b is detected by the film thickness sensor 42 via the second quartz oscillator 41C for detecting the deposition rate, and the deposition rate of the material b in the second dispersion vessel 12B is predetermined. When the value is reached, the deposition control device 43 slides the shutter plate 21 from the i position to the iv position to open the second discharge port 13b, and discharges the material b from the second discharge port 13b toward the substrate B. Deposition of the hole transport layer D2 is started.

  When the film thickness of the hole transport layer D2 detected by the film thickness sensor 42 by the crystal oscillator 41A for film thickness detection reaches a predetermined thickness, the vapor deposition control device 43 returns the shutter plate 21 to the i position and releases the second release. The outlet 13b is closed, the 2-1 on-off valve 34Ba is closed, and the heating temperature of the 2-1 evaporation cell 32Ba is lowered below the evaporation temperature of the material b. Furthermore, the material b remaining in the second material introduction tube 33B and the second dispersion vessel 12B that are continuously heated is discharged from the gap between the second detection tube 12b, the second discharge port 13b, and the shutter plate 21. After the material b is confirmed by the film thickness sensor 42 via the second crystal unit 41C, the process proceeds to the next step.

  4). (Light-Emitting Layer Evaporation Step) In the first evaporation cell 32A, the material a that is the dopant material of the light-emitting layer D3 is heated to the evaporation temperature to evaporate, and in the 2-2 evaporation cell 32Bb, the host material of the light-emitting layer D3 is used. A material c is heated to the evaporation temperature and evaporated. Then, the vapor deposition controller 43 opens the first on-off valve 34A, and introduces the evaporated material a into the first dispersion vessel 12A from the first material introduction tube 33A. At the same time, the 2-2 on-off valve 34Bb is opened to introduce the material c into the second dispersion vessel 12B through the second branch pipe 35b and the second material introduction pipe 33B. Further, the material a released from the first detection tube 12a is detected by the film thickness sensor 42 via the first quartz oscillator 41B for vapor deposition rate detection, and the material c released from the second detection tube 12b is detected. The film thickness is detected by the film thickness sensor 42 through the second crystal oscillator 41C for detecting the deposition rate. When the vapor deposition rates of the materials a and c in the first and second dispersion vessels 12A and 12B reach predetermined values, the vapor deposition control device 43 slides the shutter plate 21 from the i position to the iii position to form the first discharge port. 13a and the second discharge port 13b are opened, and the material a is discharged from the first discharge port 13a toward the substrate B. At the same time, the material c is discharged from the second discharge port 13b toward the substrate B, and the light emitting layer D3 Start vapor deposition.

  When the film thickness of the light emitting layer D3 detected by the film thickness sensor 42 by the crystal oscillator 41A for film thickness detection reaches a predetermined thickness, the vapor deposition control device 43 returns the shutter plate 21 to the i position and the first discharge port. 13a and the second discharge port 13b are closed, the first on-off valve 34A and the 2-2 on-off valve 34Bb are closed, and the heating temperatures of the first evaporating cell 32A and the 2-2 evaporating cell 32Bb are made of the materials a and c, respectively. Lower than the evaporation temperature.

  Here, since the material c in this step and the material d in the next step are the same, the time for discharging the material c remaining in the first material introduction tube 33A and the first dispersion vessel 12A is unnecessary, and the time is short. Since the next process can be started in time, the tact time can be reduced. Further, by using the same material in the same evaporation cell, the heating temperature of the evaporation cell can be kept the same and the next process can be performed, which can also contribute to shortening the tact time.

  5. (Electron Transport Layer Deposition Step) In the 2-3 evaporation cell 32Bc, the material d of the electron transport layer D4 is heated to the evaporation temperature and evaporated. Then, the vapor deposition control device 43 opens the 2-3 open / close valve 32Bc and introduces the evaporated material d into the second dispersion vessel 12B through the third branch pipe 35c and the second material introduction pipe 33B. Further, the material d emitted from the second detection tube 12b is detected by the film thickness sensor 42 via the second quartz oscillator 41C for detecting the deposition rate, and the deposition rate of the material d in the second dispersion vessel 12B is predetermined. When the value is reached, the deposition control device 43 slides the shutter plate 21 from the i position to the iv position to open the second discharge port 13b, and discharges the material d from the second discharge port 13b toward the substrate B. Deposition of the electron transport layer D4 is started.

  When the film thickness of the electron transport layer D4 detected by the film thickness sensor 42 by the crystal oscillator 41A for film thickness detection reaches a predetermined thickness, the shutter plate 21 is returned to the i position and the second discharge port 13b is closed. The 2-3 open / close valve 34Bc is closed, and the heating temperature of the 2-3 evaporation cell 32Bc is lowered below the evaporation temperature of the material d.

As described above, four organic EL layers D1 to D4 are stacked in one film forming chamber 4.
Next, the substrate B is transferred from the film forming chamber 4 to the electrode forming chamber 5 by the transfer robot 6 through the vacuum transport chamber 1, and the back electrode E is formed on the electron transport layer D 4 in the electrode forming chamber 5 (back electrode). Forming step). And after washing | cleaning and test | inspection (finishing process), manufacture of the organic EL element A is completed.

  According to the above embodiment, the container heating devices 17A and 17C heat the first and third dispersion containers 12A and 12C to appropriate heating temperatures between the evaporation temperatures of the materials a and e, respectively, and the decomposition temperature. The container heating device 17B heats the second dispersion container 12B to an appropriate heating temperature common between the evaporation temperature and the decomposition temperature of the materials b to d, respectively, and one or a plurality of first to third dispersion containers 12A to 12C. The materials a to e are selectively discharged from the first to third discharge ports 13a to 13c to the substrate B, and a plurality of organic EL layers D1 to D4 are formed on the substrate B by repeating this. Stacking can be performed. Therefore, compared with the conventional configuration, the transfer time of the substrate B to the film forming chamber 4 of the next process by the transfer robot 6 is not required, and the working time can be greatly shortened. A plurality of organic EL layers D1 to D4 can be formed on the substrate B. Further, by sharing the plurality of materials b to d in the second dispersion container 12B, the number of dispersion containers can be reduced, the structure can be simplified, and the film formation chamber 4 can be configured compactly. Furthermore, the material of the second dispersion container 12B is heated by heating the second dispersion container 12B sharing the plurality of materials b to d to an appropriate heating temperature common to the decomposition temperature from the evaporation temperature of each material b to d. The heating temperature change control for each change becomes unnecessary, and the tact time does not increase.

  Further, in the film forming chamber 4, the substrate B is disposed in a fixed state by the substrate holder 7, and the discharge port group 15 including the first to third discharge ports 13 a to 13 c is disposed in a fixed state at a predetermined interval. Further, the first to third dispersion containers 12A to 12C are arranged in a plurality of stages in the vertical direction, and the second and third discharge nozzles 13B and 13C of the second and third dispersion containers 12B and 12C on the lower stage side are arranged on the upper stage side. The first and second dispersion containers 12A and 12B are opened through the through-holes 14A and 14B on the top surface of the first dispersion container 12A, thereby disposing the discharge port group 15 at an appropriate position and A uniform film can be formed on B.

  Furthermore, since the first dispersion container 12A that releases the material a having a low evaporation temperature-decomposition temperature and has a low heating temperature is disposed at the uppermost stage, the radiant heat to the substrate B can be reduced, and due to the thermal expansion of the mask. The effect that the fall of the precision of a vapor deposition position and the quality change of a vapor deposition film can be prevented can be show | played.

  Furthermore, the first to third discharge ports 13a to 13c are selected by sliding the shutter plate 21 having the opening / closing opening 21a formed corresponding to the arrangement of the discharge port group 15 by the shutter operating device 22. It can be opened and closed automatically, and one or more materials a to e can be arbitrarily selected and released.

  Further, by forming each film forming chamber 4 as described above, even when one film forming chamber 4 fails, the film forming chamber 4 on the normal side can be used, and it is not necessary to stop the entire production line. . Further, unlike the prior art, since the substrate B is not taken in and out between the film formation chamber and the vacuum transport chamber for each film formation, the vacuum transport chamber 1 is hardly contaminated with particles or the like. The risk of contamination can be reduced.

  In the first embodiment, the up-deposition type has been described. However, as shown in FIG. 9, the substrate B is disposed on one side, the material discharge portion 11 is disposed on the other side, and the material discharge portion. Even the side deposition type that releases the material from 11 toward the side substrate B can achieve the same effects.

[Embodiment 2]
The second embodiment will be described with reference to FIG. 8B and FIG. In the second embodiment, the CuPc of the material e supplied to the third dispersion vessel 12C in the first embodiment is changed to 2TNATA, and the second to fourth evaporation pipes 32Bd to the second branch pipe 35d and the second It is configured to be supplied to the second dispersion vessel 12B via the 4 on-off valve 34Bd and the second material introduction pipe 33B, and the third dispersion vessel 12C is further omitted. Moreover, the suitable heating temperature range of 2TNATA which is the said material e is 300 degreeC-360 degreeC. Here, the same members as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  The appropriate heating temperature range of the materials b to e is set to 300 ° C. to 340 ° C., the material e is evaporated by heating to 310 ° C. in the 2-1 evaporation cell 32Ba, and the second material introduction pipe 33B and the second 2-1 The second to fourth on-off valves 34Ba to 34Bd and the first to fourth branch pipes 35a to 35d are heated to 320 ° C., and the second dispersion container 12B is heated to 330 ° C. by the container heating device 17B.

  According to the third embodiment, compared to the first embodiment, the number of three dispersion containers can be two, the first and second dispersion containers 12A and 12B, and one can be reduced. The same effects as those of the first embodiment can be achieved.

[Embodiment 3]
A third embodiment will be described with reference to FIG. 11 and FIG.
In the first and second embodiments, the first to third dispersion containers 12A to 12C are arranged so as to overlap each other. In the third embodiment, a plurality of duct-shaped first to third dispersion containers 52A to 52C ( 4 sets in the figure). The same members as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  That is, in the material discharge portion 51, a plurality of sets (four sets in the figure) of duct-shaped first to third dispersion containers 52A to 52C having a plurality of first to third discharge nozzles 53A to 53C are formed in substantially the same plane. It is installed side by side. Of course, you may arrange | position the 1st-3rd dispersion | distribution container 52A-52C to position shifting up and down. Moreover, although not shown in figure, the 1st-3rd dispersion | distribution container 52A-52C is each provided with a container heating apparatus, and the heat insulation board is installed in the space between 1st-3rd dispersion | distribution container 52A-52C.

According to the third embodiment, the same effects as those of the first embodiment can be achieved.
In each of the above embodiments, the substrate B is held in a fixed state on the substrate holder 7, but a substrate holder that rotates the substrate B around a vertical axis or moves the substrate B in a linear direction is provided. Also good.

  Moreover, although the vacuum evaporation apparatus which forms the organic EL layers D1-D4 was shown, another vacuum evaporation apparatus may be sufficient and it does not restrict to this.

It is sectional drawing of the front view of the up-deposition type film-forming chamber which shows Embodiment 1 of the vacuum evaporation system which concerns on this invention. It is a partial expanded sectional view which shows an organic EL element. It is a schematic plan view explaining the manufacturing apparatus of an organic EL element. It is an expanded sectional view which shows the penetration part of the discharge nozzle of a dispersion container. It is a top view which shows arrangement | positioning of a dispersion | distribution container and a discharge nozzle. It is a top view which shows a shutter board | plate. It is the elements on larger scale which show the positional relationship of the opening part for opening of a shutter plate, and the 1st-3rd discharge port, (a) shows the fully closed state of the 1st-3rd discharge port, (b) is the 1st. (C) shows the open state of the first and second discharge ports, (d) shows the open state of the second discharge port, and (e) shows the third and fourth discharge ports. (F) shows the open state of the third discharge port. An appropriate heating temperature range of the material is shown, (a) shows the material of the first embodiment, and (b) shows the material of the second embodiment. It is sectional drawing of the front view of the side deposition type film-forming chamber which shows the modification of a vacuum evaporation system. It is sectional drawing of the front view of the up-deposition type film-forming chamber which shows Embodiment 2 of the vacuum evaporation system which concerns on this invention. It is sectional drawing of the front view of the up-deposition type film-forming chamber which shows Embodiment 3 of the vacuum evaporation system which concerns on this invention. It is a top view which shows arrangement | positioning of the dispersion | distribution container in a material discharge | release part.

Explanation of symbols

A organic EL element B substrate C transparent electrode D1 hole injection layer D2 hole transport layer D3 light emitting layer D4 electron transport layer E back electrode 1 vacuum transport chamber 2 carry-in chamber 3 carry-out chamber 4 film formation chamber 5 electrode formation chamber 6 transport robot 7 substrate Holder 8 Mask 11, 51 Material discharge parts 12A to 12C, 52A to 52C 1A to 3rd dispersion containers 12a to 12c 1st to 3rd detection tubes 13A to 13C, 53A to 53C 1A to 3rd discharge nozzles 13a to 13c 1st-3rd discharge port 14A, 14B Through part 15 Release port group 16 Heat insulation member 17A-17C Container heating device 18 Heat insulation plate 20 Shutter device 21 Shutter plate 21a Opening and closing part 22 Shutter actuator 31 Material supply part 32A 1st Evaporation cell 32Ba 2-1 evaporation cell 32Bb 2-2 evaporation cell 32Bc 2-3 evaporation cell 32Bd second 4 evaporation cell 32C third evaporation cell 33A~33C first to third material introduction pipe 34A first on-off valve (switching means)
34Ba to 34Bd 2-1 to 2-4 open / close valve (open / close means)
34C Third open / close valve (open / close means)
35a-35d 1st-4th branch pipe 41A Crystal oscillator 41B-41D 1st-3rd crystal oscillator 42 Film thickness sensor 43 Deposition control apparatus

Claims (6)

A vacuum deposition apparatus that forms a plurality of layers of films by depositing a plurality of materials on a deposition target member in one deposition chamber,
The film forming chamber is provided with a material discharge portion disposed opposite to the vapor deposition surface of the vapor deposition member to discharge the material,
A plurality of dispersion containers having discharge ports for discharging material are provided in the material discharge part,
The evaporation cell for evaporating the material and the dispersion container are connected via an opening / closing means, and at least one of the dispersion containers evaporates the material having a common temperature range between the evaporation temperature of the material and the thermal decomposition temperature. A plurality of evaporating cells connected to each other via an opening / closing means,
A vacuum deposition apparatus in which each dispersion container is provided with a container heating device for heating to a predetermined temperature between the evaporation temperature and the pyrolysis temperature of the material to be released. Place the member to be deposited fixed to the holder,
Arranging a plurality of dispersion containers in a direction to approach and separate from the vapor deposition surface of the vapor deposition member,
In the foremost stage dispersion container closest to the deposition target member, a plurality of discharge ports for discharging the material of the foremost stage dispersion container are opened at predetermined intervals on the surface side facing the deposition surface of the deposition target member. A plurality of discharge nozzles that pass through the front-stage dispersion container and open discharge ports on the surface side of the front-stage dispersion container are provided in the dispersion container on the side farther than the front-stage dispersion container. The vacuum evaporation apparatus according to 1. The vacuum evaporation apparatus according to claim 1 or 2, wherein a dispersion container having a lower heating temperature of the container heating apparatus is disposed on the front side. A dispersion vessel for releasing the host material and a dispersion vessel for releasing the dopant material;
The vacuum evaporation apparatus according to any one of claims 1 to 3, wherein the host material and the dopant material are simultaneously released from the two dispersion containers. Provide a shutter device that can selectively open and close the discharge port of each dispersion container,
The shutter device is provided with an opening / closing opening that is slidable along the surface of the dispersion container and selectively openable on the vapor deposition surface side of the discharge port on the surface of the dispersion container in the foremost stage. The vacuum deposition apparatus according to claim 1, further comprising a shutter plate. In one film forming chamber equipped with a plurality of dispersion containers, a plurality of deposition steps are performed in which a material is discharged from the discharge port of one or a plurality of the dispersion containers and deposited on the deposition target member, and a plurality of layers are formed on the deposition target member. In forming the film,
Releasing a plurality of materials having a common temperature range between the evaporation temperature and the decomposition temperature from the at least one dispersion vessel in a plurality of vapor deposition steps;
A vacuum deposition method in which the dispersion container is heated to a predetermined temperature between an evaporation temperature and a thermal decomposition temperature of a material to be released.

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