WO2012141151A1

WO2012141151A1 - Film-forming apparatus and film-forming method

Info

Publication number: WO2012141151A1
Application number: PCT/JP2012/059730
Authority: WO
Inventors: 裕是金子; 小野　裕司; 林　輝幸; 拓岳桑田; 澄美大島; 景一山口
Original assignee: 東京エレクトロン株式会社
Priority date: 2011-04-11
Filing date: 2012-04-09
Publication date: 2012-10-18
Also published as: JP2014132101A; TW201305369A

Abstract

According to one embodiment of the present invention, a film-forming apparatus is provided with a deposition head and a shutter. The deposition head has a jetting port, from which a gas containing gas molecules of a deposition material is jetted. The shutter can be disposed at a position where the shutter blocks the gas jetted from the jetting port of the deposition head. The shutter has a cooling unit for cooling the shutter.

Description

Film forming apparatus and film forming method

Embodiments of the present invention relate to a film forming apparatus and a film forming method.

Patent Document 1 describes an organic material film forming apparatus. The apparatus described in Patent Document 1 includes a vapor deposition head that ejects a gas containing gas molecules of an organic material. In this apparatus, an organic material is deposited on the substrate to be processed by the gas sprayed from the vapor deposition head adhering to the substrate to be processed.

JP 2008-88490 A

In the film forming apparatus as described above, in order to perform film formation after the gas injection state from the vapor deposition head is stabilized, it is necessary to inject gas from the vapor deposition head before the film formation process. For this reason, the inventor of the present application has studied a film forming apparatus provided with a shutter in order to block the gas injected before the film forming process. In this research, the present inventor has found a problem that it takes time until the gas injection state is stabilized after the shutter is opened.

In view of the above, an object of one aspect of the present invention is to provide a film forming apparatus capable of shortening a period until the gas injection state is stabilized after the shutter is opened. Another object of the present invention is to provide a film forming method capable of shortening a period until the gas injection state is stabilized after the shutter is opened.

The inventor of the present application has found that the cause of the above-described problem is that the pressure increases between the shutter and the ejection port while the shutter is closed. This increase in pressure is presumed to have occurred because the gas reflected by the shutter collides with the gas injected from the injection port.

A film forming apparatus according to one aspect of the present invention includes a vapor deposition head and a shutter. The vapor deposition head has an ejection port that ejects a gas containing gas molecules of the vapor deposition material. The shutter can be arranged at a position (hereinafter referred to as “closed position”) that blocks gas from the ejection port of the vapor deposition head. The shutter has a cooling unit for cooling the shutter.

In this film forming apparatus, since the shutter is cooled, gas molecules of the vapor deposition material are adsorbed on the shutter. Therefore, an increase in pressure between the shutter and the ejection port can be reduced. As a result, according to this film forming apparatus, it is possible to shorten the period until the gas injection state is stabilized after the shutter is opened.

In one embodiment, the film forming apparatus may further include a stage on which the substrate to be processed is mounted, and a moving mechanism that moves the stage in a direction that intersects with the gas injection direction from the injection port of the vapor deposition head. The vapor deposition head may have a plurality of injection ports, and the plurality of injection ports may be arranged in a direction that intersects the moving direction of the stage. The vapor deposition head of this embodiment has a jet port arranged in one direction, and is a so-called linear source type vapor deposition head. The distance between the linear source type vapor deposition head and the substrate to be processed is generally set shorter than the distance between the point source type vapor deposition head and the substrate to be processed. Therefore, the distance between the linear source type vapor deposition head and the shutter is inevitably shortened. Therefore, the shutter having the cooling part is effective for the linear source type vapor deposition head.

In one embodiment, when the shutter is disposed at the closed position, the cooling unit may be interposed between the vapor deposition head and the space for forming the substrate to be processed. Generally, the vapor deposition head is heated during use. According to this embodiment, the influence on the space due to the heat radiated from the vapor deposition head can be reduced.

In one embodiment, the cooling unit may include a refrigerant flow path. In this embodiment, the film forming apparatus may further include means for switching the direction in which the refrigerant flows in the flow path between one direction and another direction opposite to the one direction. According to this embodiment, the shutter can be cooled more uniformly.

In one embodiment, the shutter may further include a heating unit for heating the shutter. By heating the shutter using the heating unit, for example, the vapor deposition material attached to the shutter can be removed at a time other than the period of the film forming process.

In one embodiment, the shutter may have a comb-tooth structure in a portion where gas is sprayed. According to this embodiment, it is possible to adsorb gas molecules more efficiently by the comb-tooth structure.

In one embodiment, the shutter may include a surface inclined with respect to the center line of the injection port in a portion where the gas is blown. According to this embodiment, for example, it becomes possible to reflect a carrier gas such as argon gas mixed with the gas together with gas molecules of the vapor deposition material in a direction different from the direction toward the injection port. In one embodiment, the inclined surface may include a wavy surface.

In one embodiment, the tip portion of the vapor deposition head provided with the injection port may be configured with a tapered surface. According to this form, even if the gas reflected from the shutter is reflected in the direction of the tip portion of the vapor deposition head, the gas is deflected by the tapered surface. Therefore, further reflection of the gas in the direction of the shutter can be reduced.

According to another aspect of the present invention, there is provided a film forming method comprising: (a) a position where a gas containing gas molecules of a vapor deposition material from an ejection port of a vapor deposition head is blocked (hereinafter referred to as “closed position”) A step of cooling the shutter, (b) a step of retracting the shutter from the closed position, and (c) a step of forming a vapor deposition material on the substrate to be processed by a gas from the vapor deposition head. Then, during the period when the shutter is in the closed position, the shutter is cooled, and gas molecules of the vapor deposition material are adsorbed in the shutter, so that an increase in pressure between the shutter and the injection port can be reduced. According to the film forming method, it is possible to shorten the period until the gas injection state is stabilized after the shutter is opened.

In one embodiment, the film forming method may further include a step of heating the shutter after the step of forming the film. According to the film formation method of this embodiment, it is possible to remove the vapor deposition material attached to the shutter by heating the shutter during a period different from the period of the film formation process.

As described above, according to one aspect and another aspect of the present invention, there is provided a film forming apparatus and a film forming method capable of shortening the period until the gas injection state is stabilized after the shutter is opened. The

It is a figure which shows an example of the film-forming system containing the film-forming apparatus which concerns on one Embodiment. It is a figure which shows an example of the organic EL element which can be manufactured with the film-forming system which concerns on one Embodiment. It is a figure showing roughly the film deposition system concerning one embodiment. It is a figure showing roughly the film deposition system concerning one embodiment. It is a perspective view which shows the vapor deposition head which concerns on one Embodiment, a shutter, and a shutter movement mechanism. It is the top view which looked at the vapor deposition head and shutter which concern on one Embodiment from the side. It is a figure which shows the shutter which concerns on one Embodiment. It is a figure which shows the piping system for refrigerant | coolants in the film-forming apparatus which concerns on one Embodiment. It is a figure which shows the control part which concerns on one Embodiment. It is a figure which shows the sequence of each process in the film-forming method which concerns on one Embodiment. It is a figure which shows schematically the film-forming apparatus which concerns on another embodiment. It is a perspective view which shows the shutter which concerns on another embodiment. It is a figure which shows the modification of the shutter shown in FIG. It is a perspective view which shows the shutter movement mechanism which concerns on another embodiment. It is a figure which shows the shutter which has the flow path for refrigerant | coolants which concerns on another embodiment. It is a figure which shows the shutter which has the flow path for refrigerant | coolants which concerns on another embodiment. It is a figure which shows the piping system which concerns on another embodiment. It is a perspective view which shows the shutter movement mechanism which concerns on another embodiment. It is a figure which shows the various modifications of a shutter or a vapor deposition head. It is a figure which shows another example of the film-forming system.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

FIG. 1 is a diagram illustrating an example of a film forming system including a film forming apparatus according to an embodiment. A film forming system 100 illustrated in FIG. 1 includes a film forming apparatus 10 according to an embodiment. The film forming system 100 can be used, for example, as a system for manufacturing an organic EL (Electro Luminescence) element shown in FIG.

FIG. 2 is a diagram illustrating an example of an organic EL element that can be manufactured by a film forming system according to an embodiment. The organic EL element D shown in FIG. 2 may include a substrate Sub, a first layer D1, a second layer D2, a third layer D3, a fourth layer D4, and a fifth layer D5. The substrate Sub is an optically transparent substrate such as a glass substrate.

A first layer D1 is provided on one main surface of the substrate Sub. The first layer D1 can be used as an anode layer. The first layer D1 is an optically transparent electrode layer, and may be formed of a conductive material such as ITO (Indium Tin Oxide). The first layer D1 is formed by, for example, a sputtering method.

The second layer D2, the third layer D3, and the fourth layer D4 are sequentially stacked on the first layer D1. The second layer D2, the third layer D3, and the fourth layer D4 are organic layers. The second layer D2 can be a hole transport layer. The third layer D3 is a light emitting layer, and may include, for example, a non-light emitting layer D3a, a blue light emitting layer D3b, a red light emitting layer D3c, and a green light emitting layer D3d. Further, the fourth layer D4 may be an electron transport layer.

The fifth layer D5 is provided on the fourth layer D4. The fifth layer D5 is a cathode layer and can be made of, for example, Ag, Al, or the like. The fifth layer D5 can be formed by a sputtering method or the like. The element D having such a configuration can be further sealed with an insulating sealing film made of a material such as SiN formed by microwave plasma CVD or the like.

Returning to FIG. 1, the film forming system 100 capable of manufacturing such an organic EL element D may further include a loader 102, a transfer chamber 104, and a mask stocker 106. In the film forming system 100, between the loader 102 and the next module of the loader 102, between the transfer chamber 104 and the module in front of the transfer quality 104, and between the transfer chamber 104 and the film forming chamber of the film forming apparatus 10. As in between the mask stocker 106 and the film forming chamber of the film forming apparatus 10, a gate valve G is provided between the modules. Thereby, the space in each module is sealed. The film forming system 100 is not limited to the gate valve G, and can include any isolation means as long as it is a means capable of isolating the space in each module.

In the film forming system 100, the substrate to be processed can be processed as described below. That is, first, the substrate Sub is mounted on the loader 102. Then, the substrate Sub is transferred as a substrate to be processed to a sputtering apparatus (not shown), and a patterned first layer D1 is formed on the substrate Sub in the sputtering apparatus. Thereby, the to-be-processed base | substrate which has the 1st layer D1 on the board | substrate Sub is produced.

Next, the substrate to be processed is transferred into the film forming chamber of the film forming apparatus 10 through the transfer chamber 104, and the second layer D2 and the third layer D3, which are organic layers, are formed on the first layer D1 in the film forming chamber. , And a fourth layer D4 are sequentially formed. Thereby, the to-be-processed base | substrate which has an organic layer on the 1st layer D1 is created.

Next, the substrate to be processed is transferred to another sputtering apparatus (not shown), and the fifth layer D5 is formed on the fourth layer D4 in the sputtering apparatus. Thereby, a to-be-processed base | substrate which has the 5th layer D5 on the 4th layer D4 is produced. Further, the substrate to be processed is transferred to a plasma CVD apparatus, and a sealing film is formed in the plasma CVD apparatus. In addition, the film-forming system 100 is not limited to the organic EL element D shown in FIG. 2, and can be used to generate any organic element such as a solar cell element including an organic layer or an organic semiconductor element.

3 and 4 are diagrams schematically showing a film forming apparatus according to an embodiment. FIG. 3 schematically shows a film forming apparatus according to an embodiment as viewed from a direction (side) perpendicular to the moving direction of the stage, and FIG. 4 shows a structure of the embodiment as viewed from the moving direction of the stage. 1 schematically shows a membrane device. In the following description, as shown in FIGS. 3 and 4, a film forming apparatus 10 that performs film formation in the face-up state will be described. That is, in the film forming apparatus 10, gas is injected from above onto the film forming surface of the substrate W to be processed with the film forming surface facing upward. Note that the idea of the present invention can also be applied to a film forming apparatus that performs film formation in a face-down state or in a state where the substrate is vertically set up.

As shown in FIGS. 3 and 4, the film forming apparatus 10 includes one or more vapor deposition heads 12 and one or more shutters 14. Each of the one or more shutters 14 can be arranged to block gas from the corresponding vapor deposition head 12. In one embodiment, the film forming apparatus 10 may further include a chamber wall 16 and a chamber wall 18.

The chamber wall 16 defines the film forming chamber C1 described above, and the chamber wall 18 defines the chamber C2. An exhaust device P1 is connected to the film forming chamber C1 through a pipe d1. The pipe d1 is provided with a valve V1. The exhaust device P1 exhausts the gas in the film formation chamber C1, and maintains the film formation chamber C1 in a substantially vacuum.

One or more vapor deposition heads 12 are provided so as to straddle the film forming chamber C1 and the chamber C2. In FIG. 3, in order to manufacture the organic EL element D, six vapor deposition heads 12 are provided for the film formation chamber C1. The number of the vapor deposition heads 12 can be arbitrarily changed according to the number of organic layers of the element to be manufactured. One or more arbitrary number of vapor deposition heads 12 may be provided in one film formation chamber. In addition, since the six vapor deposition heads 12 have substantially the same configuration, in the following description, the configuration of one vapor deposition head 12 will be described.

The vapor deposition head 12 injects the gas containing the gas molecule of vapor deposition material. A vapor deposition gas supply source 20 is connected to the vapor deposition head 12 via a pipe d2. A valve V2 is provided in the pipe d2. The valve V2 switches between supply and stop of gas supply from the vapor deposition gas supply source 20 to the vapor deposition head 12. The gas generated and supplied by the deposition gas supply source 20 includes gas molecules of a deposition material (organic material) and a carrier gas. An inert gas such as Ar is used as the carrier gas.

Further, the vapor deposition head 12 is connected to the exhaust device P2 through the pipe d3. The pipe d3 is provided with a valve v3. The valve V3 switches exhaust of the gas in the vapor deposition head 12 and exhaust stop.

Further, a pipe d4 is branched from the pipe d2 described above between the valve V2 and the vapor deposition gas supply source 20, and the pipe d4 is connected to the pipe d3 between the valve V3 and the exhaust device P2. . The pipe d4 is provided with a valve V4. The pipe d4 constitutes a path for bypassing the gas to the exhaust device P2 when the gas from the vapor deposition gas supply source 20 is not supplied to the vapor deposition head 12. That is, when the gas is not supplied to the vapor deposition head 12, the valves V2 and V3 are closed and the valve V4 is opened. Thereby, the gas from the vapor deposition gas supply source 20 is exhausted through the pipe d4. On the other hand, when the gas is supplied to the vapor deposition head 12, the valve V4 is closed and the valve V2 is opened. As a result, gas is supplied from the vapor deposition gas supply source 20 to the vapor deposition head 12.

In addition, the valve V2, the valve V3, and the valve V4 are provided in the chamber C2 defined by the chamber wall 18. Further, the pipe d2, the pipe d3, and the pipe d4 are partially provided in the chamber C2. The inside of the chamber C2 can be exhausted by the exhaust device P2.

In one embodiment, the film forming apparatus 10 may further include a stage S and a moving mechanism 22. On the stage S, the substrate W to be processed transported by the transport device in the transport chamber 104 is placed. The stage S has, for example, an electrostatic chuck and can attract the substrate W to be processed by an electrostatic force generated by the electrostatic chuck. The stage S is supported by a moving mechanism 22 so as to be movable in a predetermined direction.

The moving mechanism 22 moves the stage S in the X direction in the space in the film forming chamber C1. This space is located below the vapor deposition head 12 in the gas ejection direction (Y direction) of the vapor deposition head 12. Further, the X direction is a direction that intersects with the gas injection direction (Y direction) from the vapor deposition head 12, and is, for example, a direction orthogonal to the Y direction. When the stage S is moved in the X direction by the moving mechanism 22, the substrate W to be processed placed on the stage S passes under the vapor deposition head 12. As a result, an organic layer is formed on the substrate W by vapor deposition. Note that a linear stage using a linear motor can be adopted as the moving mechanism 22. Further, any mechanism can be used as the moving mechanism 22 as long as the mechanism moves the stage S in the X direction.

In one embodiment, the film forming apparatus 10 may further include a mask aligner 24. The mask M stored in the mask stocker 106 is transported into the film forming chamber C1 by the transport device in the mask stocker 106. The mask M transferred by the film forming chamber C1 is aligned on the substrate W to be processed by the mask aligner 24. In the film forming apparatus 10, the organic layer described above can be formed on the substrate W to be processed in a pattern corresponding to the mask M.

Corresponding shutters 14 are provided between the moving space through which the stage S is guided by the moving mechanism 22 and the vapor deposition head 12. The shutter 14 is used to temporarily block the gas from the vapor deposition head 12. Hereinafter, FIG. 5 and FIG. 6 will be referred to together with FIG. 3 and FIG. FIG. 5 is a perspective view showing a vapor deposition head, a shutter, and a shutter moving mechanism according to an embodiment. In FIG. 5, the vapor deposition head 12 and the shutter 14 are shown in a positional relationship inverted from the positional relationship in the Y direction between the vapor deposition head 12 and the shutter 14 shown in FIGS. 3 and 4. FIG. 6 is a plan view showing a vapor deposition head and a shutter according to an embodiment as viewed from the side (Z direction).

The vapor deposition head 12 may have a plurality of injection ports 12a in one embodiment. From the plurality of injection ports 12a, the gas supplied by the vapor deposition gas supply source 20 is injected around the Y-direction axis. These injection ports 12a may be arranged in a direction that intersects the moving direction (X direction) of the stage S. For example, the plurality of injection ports 12a can be arranged in the Z direction orthogonal to the X direction and the Y direction.

The shutter 14 extends in the direction (Z direction) in which the plurality of injection ports 12a are arranged. The shutter 14 can be arranged at a position (hereinafter referred to as “closed position”) that blocks gas from the ejection port 12 a of the vapor deposition head 12. Further, the shutter 14 is retracted from the open position and can be moved to a position where the gas from the ejection port 12a of the vapor deposition head 12 is not blocked (hereinafter referred to as “open position”).

In one embodiment, each shutter 14 is moved in the Y direction by a corresponding shutter moving mechanism 28 as shown in FIGS. In one embodiment, the shutter moving mechanism 28 includes a rail 28a and a driving device 28b. The rail 28a extends in the X direction so as to support both edges of the shutter 14 in the Z direction, and guides the shutter 14 in the X direction. The driving device 28b generates a driving force for moving the shutter 14 in the X direction. For example, the driving device 28b may be an air cylinder that is coupled to the shutter 14 and applies a driving force in the X direction to the shutter 14.

In one embodiment, the shutter 14 includes a facing portion 14a and a cooling portion 14b. The facing portion 14a is a portion facing the ejection port 12a when the shutter 14 is located at the closed position. The gas from the injection port 12a is mainly applied to the facing portion 14a and is blocked by the facing portion. In one embodiment, the opposing part 14a has a comb-tooth structure, as shown in FIG. The facing portion 14a may include, for example, a plurality of fins 14f extending from the cooling portion 14b toward the vapor deposition head 12, that is, extending along the Y direction and the Z direction, as a comb-tooth structure. This comb structure increases the adsorption efficiency of the vapor deposition material by the shutter 14. In addition, the shutter 14 can be comprised by the member excellent in thermal conductivity, such as stainless steel, for example. Further, the surface of the shutter 14 or the surface of the facing portion 14a may be subjected to a roughening process in order to increase the adsorption efficiency of the vapor deposition material. In addition, a Cu film may be formed on the surface of the shutter 14 or the surface of the facing portion 14a in order to increase thermal conductivity.

The cooling unit 14 b is a part that cools the shutter 14. In one embodiment, as shown in FIG. 6, the cooling unit 14 b includes a wall that defines a cavity 14 h extending in the Z direction. The cavity 14h can be, for example, a cavity having a rectangular cross section. The cavity 14h constitutes a flow path F through which a coolant such as cooling air or cooling water flows.

Here, refer to FIG. 7 and FIG. FIG. 7 is a diagram illustrating a shutter according to an embodiment. FIG. 7A shows a plan view of the shutter 14 viewed from the X direction, and FIG. 7B shows a plan view of the cooling unit 14b viewed from the Y direction. . FIG. 8 is a diagram illustrating a refrigerant piping system in the film forming apparatus according to the embodiment.

As shown in FIGS. 7 and 8, one end 14e1 of the cavity 14h constitutes one end F1 of the flow path F, and is connected to the pipe da2 connected to the chamber wall 16 via the flexible pipe da1. Can do. A valve Va is provided in the pipe da2. The other end 14e2 of the cavity 14h constitutes the other end F2 of the flow path F, and can be connected to the pipe db2 connected to the chamber wall 16 through the flexible pipe db1. The pipe db2 is provided with a valve Vb. In the example shown in FIG.7 and FIG.8, the refrigerant | coolant supplied from the supply source is supplied in the flow path F from the end F1 via piping da2 and da1. The refrigerant supplied into the flow path F is discharged from the other end F2 through the pipes db1 and db2. According to the cooling unit 14b, the facing part 14a of the shutter 14 is cooled, and the adsorption efficiency of the vapor deposition material in the facing part 14a is increased.

Further, as shown in FIG. 6, the cooling unit 14 b can be provided so as to be positioned between the moving space in which the stage S moves and the vapor deposition head 12 when the shutter 14 is in the closed position. The vapor deposition head 12 generally has a heater and can be used in a heated state. Therefore, the presence of the cooling unit 14b between the moving space in which the stage S moves and the vapor deposition head 12 can reduce the amount of heat transferred from the vapor deposition head 12 to the moving space. Therefore, the influence of heat on the component parts of the film forming apparatus 10 or the substrate W to be processed disposed in the moving space is suppressed.

In one embodiment, as shown in FIGS. 6 and 7, the shutter 14 may have a heating unit 14c. The heating unit 14c is embedded in, for example, a wall constituting the cooling unit 14b. The heating unit 14c may be a heating wire provided to meander inside the wall of the cooling unit 14b. According to the heating unit 14c, the vapor deposition material attached to the facing unit 14a during a period other than the film forming process period can be removed by heating. The shutter 14 may be detachable from the rail 28a, or maintenance such as cleaning of the shutter 14 may be performed by removing the shutter 14 from the rail 28a.

In one embodiment, the facing portion 14a may be configured to be removable from the cooling portion 14b. For example, the facing portion 14a may be attached to the cooling portion 14b by a fixing tool such as a screw. Moreover, in another embodiment, the some fin of the opposing part 14a may be comprised independently of the cooling part 14b so that removal is possible. For example, the plurality of fins 14f of the facing portion 14a may be individually attached to the cooling portion 14b by a fixture such as a screw. By making the opposing portion 14a or each fin of the opposing portion 14a removable from the cooling portion 14b, the opposing portion 14a or each fin can be easily cleaned.

Hereinafter, a control unit that can be used as a part of the film forming system 100 or a part of the film forming apparatus 10 will be described with reference to FIG. FIG. 9 is a diagram illustrating a control unit according to an embodiment. In addition, with reference to FIG. 10 together with FIG. 9, a film forming method according to an embodiment will be described together with a control sequence by the control unit. FIG. 10 is a diagram illustrating a sequence of steps in the film forming method according to the embodiment.

The control unit 30 illustrated in FIG. 9 can be, for example, a computing device having a CPU (Central Processing Unit) and a memory. The control unit 30 sends a control signal for each element of the film forming apparatus 10 according to a program, data, or the like stored in the memory. Specifically, the control unit 30 sends out a control signal for causing each element of the film forming apparatus 10 to execute some or all of the plurality of steps shown in FIG. For example, the control signal sent out by the control unit 30 can include the following control signals.
-Control signal for controlling scanning of stage S by moving mechanism 22-Control signal for controlling mask aligner 24-Control signal for controlling opening / closing of gate valve G-Valves (V1 to V4, Va, Vb, etc.) Control signal for controlling opening / closing / Control signal for controlling shutter moving mechanism 28 (for example, driving device 28b) / Control signal for controlling power supply to heating unit 14c

The control unit 30 may be a single computing device, or may be a plurality of computing devices that individually control each process and cooperate with each other.

Hereinafter, refer to FIG. In FIG. 10, time is taken on the horizontal axis, and each process is shown on the vertical axis. In FIG. 10, the period in which each process is performed is indicated by a double line extending in the horizontal direction from the label indicating the process. As shown in FIG. 10, in the film forming method of one embodiment, first, heating of the vapor deposition head 12 is started (starting at time t1; step S1). Thereafter, the cooling of the shutter 14 is started (starting at time t2; step S2). At this point, the shutter 14 is in the closed position.

Next, the substrate to be processed W is placed on the stage S (starting at time t3, step S3). Thereafter, the mask M is aligned and placed on the substrate W to be processed using the mask aligner 24 (starting at time t4, step S4). Thereafter, the shutter 14 is moved to the open position for film formation (starting at time t5, step S5). Next, the stage S is moved in the X direction from a position below the mask aligner 24 (starting at time t6, step S6). Then, when the stage S passes below the vapor deposition head 12, an organic layer is formed on the film formation surface on the substrate to be processed S (starting at time t7, step S7).

Next, after completion of the film formation process (time t8), the mask M is removed (step S8), and the substrate W to be processed is taken out from the film formation chamber C1 (starting at time t9, step S9). In addition, after the film formation process ends (time t8), the shutter 14 is moved to the closed position. Further, after the film formation process is completed, the shutter 14 is heated, and the vapor deposition material attached to the shutter 14 is removed (step S10). After this heating is continued from time t8 to time t10, cooling of the shutter 14 is started again (starting at time t11, step S11).

According to the film forming method described above, the shutter 14 is cooled while the shutter 14 is in the closed position (for example, during a period from time t2 to time t5). Therefore, the adsorption efficiency of the vapor deposition material in the shutter 14 is increased. Thereby, the pressure of the space between the shutter 14 and the injection port 12a is reduced. As a result, it is possible to shorten the period (the period from time t5 to time t7) until the gas injection state from the injection port 12a is stabilized after the shutter 14 is opened (after time t5). Therefore, the throughput is improved. Further, since the shutter 14 is heated after the film formation process, the vapor deposition material attached to the shutter 14 can be removed without affecting the film formation process.

Hereinafter, various other embodiments will be described. FIG. 11 is a diagram schematically showing a film forming apparatus according to another embodiment. FIG. 11 schematically shows a film forming apparatus according to an embodiment as viewed from the moving direction (X direction) of the stage. A film forming apparatus 10A shown in FIG. 11 is different from the film forming apparatus 10 in that it includes a shutter moving mechanism 28A in place of the shutter moving mechanism 28.

In the film forming apparatus 10A, the shutter 14 is movable in the vertical direction (Y direction). Therefore, in the film forming apparatus 10A, the shutter moving mechanism 28A moves the shutter 14 in the Y direction. The shutter moving mechanism 28A can be, for example, an air cylinder that moves the shutter 14 in the Y direction. The shutter moving mechanism 28 </ b> A can be supported by a support base 32 provided below the chamber wall 16. Further, the rod of the shutter moving mechanism 28A can be connected to both edge portions of the shutter 14 in the Z direction.

The shutter moving mechanism 28A moves the shutter 14 above the moving space of the stage S when the shutter 14 blocks the gas from the vapor deposition head 12. Thereby, the shutter 14 opposes the ejection port of the vapor deposition head 12. In this state, the shutter 14 is in the closed position. On the other hand, the shutter moving mechanism 28A moves the shutter 14 to the open position by moving the shutter 14 below the moving space of the stage S. Thereby, the gas from the vapor deposition head 12 is sprayed on the to-be-processed substrate W, without the gas from the vapor deposition head 12 being interrupted by the shutter 14.

FIG. 12 is a perspective view showing a shutter according to another embodiment. A shutter 14A illustrated in FIG. 12 includes a cooling unit 14Ab having a structure different from that of the cooling unit 14b of the shutter 14. The cooling unit 14Ab is provided with three holes extending in the Z direction. Of these three holes, the hole 14i located in the center in the X direction constitutes a flow path F through which the refrigerant flows. Moreover, the heating part 14c which is a cartridge type heater can be inserted in the two holes 14n on both sides of the hole 14i among the three holes, for example. Thus, since a cartridge-type heater can be used, the manufacture of the shutter 14A is easier.

In the shutter 14A, the refrigerant may flow through the hole 14i as shown in FIG. 12, but as shown in FIG. 13, the pipe 14d is inserted into the hole 14i and the refrigerant flows through the flow path F in the pipe 14d. May be.

Further, in one embodiment, the pipe 14d may partially contact the inner wall surface of the cooling unit 14Ab that defines the hole 14i. In the example shown in FIG. 13, the pipe 14d includes a first portion 14d1, a second portion 14d2, and a third portion 14d3. The second portion 14d2 is provided between the first portion 14d1 and the third portion 14d3 in the longitudinal direction (Z direction) of the pipe 14d. The outer diameter of the second portion 14d2 is larger than the outer diameters of the first portion 14d1 and the third portion 14d3. As shown in FIG. 13, the second portion 14d2 is in contact with the inner wall surface defining the hole 14i in the central region in the Z direction of the shutter 14A. On the other hand, the first portion 14d1 and the third portion 14d3 are not in contact with the inner wall surface that defines the hole 14i. Thus, the heat distribution of the shutter 14 can be adjusted by configuring the pipe through which the refrigerant flows so as to partially contact the inner wall surface of the hole 14i.

FIG. 14 is a perspective view showing a shutter moving mechanism according to another embodiment. A shutter moving mechanism 28B shown in FIG. 14 is coupled to one end of the shutter 14 and swings the shutter 14 about the axis extending in the Y direction. The shutter moving mechanism 28B may be a rotary air cylinder. In this way, the shutter 14 may be moved between the closed position and the open position by swinging the shutter 14 around one end thereof.

FIG. 15 is a view showing a shutter having a flow path for refrigerant according to another embodiment. FIG. 15A shows a shutter cooling unit viewed in the Y direction, and FIG. 15B shows the shutter viewed from the Z direction. In the shutter shown in FIG. 15, a wall 14p extending in the Z direction is provided in the cavity 14h of the cooling unit 14b. The wall 14p forms a U-shaped flow path F in the cavity 14h. That is, in the flow path F shown in FIG. 15, one end F1 and the other end F2 of the flow path F are provided at one end of the cooling unit 14b.

The U-shaped flow path F may be comprised by the piping 14g, as shown in FIG. FIG. 16 is a view showing a shutter having a refrigerant flow path according to another embodiment. FIG. 16A shows a shutter cooling portion viewed in the Y direction. (B) shows the shutter viewed from the Z direction. In the shutter shown in FIG. 16, a pipe 14g is provided in the cavity 14h of the cooling unit 14b. For example, the pipe 14g is cut in a plane parallel to the longitudinal direction (Z direction) and bent into a U shape. The cut end face of the pipe 14g made by this cutting can be joined to the wall on the facing portion 14a side among the walls defining the cavity 14h. Thereby, the contact area of the refrigerant | coolant with respect to the wall by the side of the opposing part 14a becomes large, and it becomes possible to cool the opposing part 14a efficiently.

Note that the shutter having the flow path F shown in FIGS. 15 and 16 can be used together with any shutter moving mechanism described in this specification. Moreover, the piping system for refrigerant | coolants containing the flow path F shown in FIG.15 and FIG.16 may be the same as the piping system demonstrated in FIG. That is, the refrigerant supplied from one end F1 may flow in one direction through the flow path F and be discharged from the other end F2.

In one embodiment, the piping system shown in FIG. 17 may be employed as the piping system including the flow path F. FIG. 17 is a diagram illustrating a piping system according to another embodiment. In the piping system shown in FIG. 17, the direction of the refrigerant flowing in the flow path F can be switched between one direction and the other direction. Specifically, the pipe dc branches from the pipe da2 between the pipe da1 and the valve Va. The pipe dc is provided with a valve Vc. The pipe dc is connected to the pipe db2 between the outlet of the pipe db2 and the valve Vb. Further, a pipe dd branches from the pipe db2 between the pipe db1 and the valve Vb. This pipe dd is provided with a valve Vd. The pipe dd is connected to the pipe da2 between the supply port of the pipe da2 and the valve Va.

In the piping system shown in FIG. 17, the valve Va and the valve Vb are opened simultaneously. When the valve Va and the valve Vb are opened, the valve Vc and the valve Vd are closed. On the other hand, when the valve Vc and the valve Vd are opened simultaneously, the valve Va and the valve Vb are closed.

When the valve Va and the valve Vb are opened simultaneously, the refrigerant supplied to the pipe da2 flows in one direction through the flow path F via the pipe da1. The refrigerant that has flowed in one direction through the flow path F flows through the pipe db1 and the pipe db2 and is discharged. On the other hand, when the valve Vc and the valve Vd are opened simultaneously, the refrigerant supplied to the pipe da2 flows through the flow path F in the other direction opposite to the one direction via the pipe dd. The refrigerant that has been able to flow through the flow path F in the other direction flows through the pipe da1, the pipe dc, and the pipe db2 and is discharged. Thus, according to the piping system shown in FIG. 17, the direction in which the refrigerant flows in the flow path F can be switched between one direction and the other direction opposite to the one direction. With this configuration, the direction in which the refrigerant flows is alternately switched, so that the shutter is cooled more uniformly.

FIG. 18 is a perspective view showing a shutter moving mechanism according to still another embodiment. The shutter moving mechanism 28C shown in FIG. 18 rotates the facing portion 14Ca of the shutter 14C about the axis extending in the Z direction, and the facing portion 14Ca is opened (see FIG. 18A) and closed (see FIG. 18). (See (b)).

The shutter moving mechanism 28C may include a rotation drive device 28Ca and a shaft 28Cb. The rotational drive device 28Ca can be, for example, a rotary air cylinder. The shaft 28Cb extends in the Z direction, and is coupled to the rotational drive device 28Ca at one end thereof. The cooling portion 14Cb of the shutter 14C is configured by a wall that defines a space for inserting the shaft 28Cb. The shaft 28Cb is held by the wall of the cooling unit 14Cb. The inside of the shaft 28Cb is hollow. This cavity defines a flow path F for the refrigerant. Since the shutter moving mechanism 28C is a uniaxially driven moving mechanism, it can be easily configured in the film forming apparatus.

Hereinafter, refer to FIG. 19A to 19F show various modifications of the shutter and / or the vapor deposition head. As shown to (a) of FIG. 19, the opposing part 14a of a shutter may be comprised by the surface inclined with respect to the centerline Y1 extended in the Y direction of the injection nozzle 12a. Specifically, the facing portion 14a shown in FIG. 19A is constituted by two surfaces that are inclined downward from a top piece that extends in the Z direction and intersects the center line Y1. These two surfaces may be curved surfaces as shown in FIG. Further, as shown in FIG. 19C, the top side may be deviated in the X direction with respect to the center line Y1.

Further, the facing portion 14a of the shutter may be constituted by a wavy surface as shown in FIG. Further, as shown in FIG. 19E, the facing portion 14a of the shutter may be configured by a plane orthogonal to the Y direction. In this case, the center line Y2 of the injection port is inclined with respect to the Y direction.

In the embodiment shown in FIGS. 19A to 19E, the facing portion 14a reflects the gas that is not adsorbed by the facing portion 14a in a direction deviating from the injection port 12a. Therefore, according to these embodiments, the pressure in the space between the injection port 12a and the facing portion 14a can be more effectively reduced. Note that the gas that is not adsorbed by the facing portion 14a is mainly a carrier gas, and may include a vapor of a vapor deposition material as the remainder.

Further, as shown in FIG. 19 (f), the tip portion of the vapor deposition head 12 provided with the injection port 12a may be constituted by a tapered surface. In this case, the taper angle α shown in FIG. 19F may be about 35 degrees, for example, and the width W of the tip of the vapor deposition head 12 may be about 6 mm. According to the embodiment shown in FIG. 19F, the facing portion 14a reflects the gas that is not adsorbed by the facing portion 14a toward the injection port 12a. However, the tapered surface faces the gas toward the facing portion 14a. Further reflections can be reduced.

In any of the embodiments shown in FIGS. 19A to 19F, the surface of the shutter or the opposed portion 14a may be roughened, and Cu having good thermal conductivity may be used. A metal film may be formed. Further, in order to reduce the pressure in the space between the ejection port 12a and the facing portion 14a, the ejection port 12a and the facing portion 14a may be separated by 10 mm or more.

Next, refer to FIG. FIG. 20 is a diagram illustrating another example of the film forming system. In the film forming system 100D shown in FIG. 20, a mask stocker 106D and an alignment chamber 108 are provided on both sides of the transfer chamber 104D in the Z direction via gate valves G, respectively. The transfer chamber 104D includes a transfer device. This transport apparatus receives the mask M from the mask stocker 106D, and transports the substrate W and the mask M to the alignment chamber 108. In the alignment chamber 108, the mask M is aligned and placed on the substrate W to be processed. Further, the alignment chamber 108 conveys the substrate W to be processed on which the mask M is placed in the alignment chamber 108 onto the stage S of the film forming apparatus 10D. This film forming apparatus 10 </ b> D is different from the film forming apparatus 10 in that it does not have the mask aligner 24.

The film formation system 100D may be suitable for film formation for a small substrate to be processed W as compared with the film formation system 100. On the other hand, since the film forming system 100 aligns the mask M in the film forming apparatus 10, the transfer capability required for the transfer apparatus in the transfer chamber 104 is relatively low. Therefore, the film forming system 100 can be suitable for a large substrate to be processed W. Further, the film forming system 100 can be manufactured at a lower cost than the film forming system 100D.

Although various embodiments have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, elements or configurations of the various described embodiments can optionally be replaced with corresponding elements or configurations of other embodiments.

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus, 12 ... Evaporation head, 12a ... Injection port, 14 ... Shutter, 16 ... Chamber wall, C1 ... Deposition chamber, 20 ... Deposition gas supply source, 22 ... Moving mechanism, 28 ... Shutter moving mechanism, 30 ... Control unit, 100 ... Film forming system, F ... Flow path for refrigerant, S ... Stage, W ... Substrate to be processed.

Claims

A deposition head having an ejection port for ejecting a gas containing gas molecules of the deposition material;
A shutter that can be disposed at a position to block the gas;
With
The shutter includes a cooling unit for cooling the shutter.
Deposition device.
A stage on which a substrate to be processed is mounted;
A moving mechanism that moves the stage in a direction that intersects the direction of gas ejection from the ejection port of the vapor deposition head;
The vapor deposition head has a plurality of injection ports including the injection port, and the plurality of injection ports are arranged in a direction crossing the moving direction of the stage.
The film forming apparatus according to claim 1.
3. The cooling device according to claim 1, wherein when the shutter is disposed at the position, the cooling unit is interposed between the vapor deposition head and a space for forming a film to be processed. The film-forming apparatus of description.
The cooling unit includes a refrigerant flow path,
Means for switching a direction in which the refrigerant flows in the refrigerant flow path to one direction and another direction opposite to the one direction;
The film forming apparatus according to any one of claims 1 to 3.
5. The film forming apparatus according to claim 1, wherein the shutter further includes a heating unit for heating the shutter.
The film forming apparatus according to any one of claims 1 to 5, wherein the shutter has a comb-tooth structure in a portion to which the gas is blown.
The film forming apparatus according to any one of claims 1 to 6, wherein the shutter includes a surface inclined with respect to a center line of the injection port at a portion to which the gas is blown.
The film forming apparatus according to claim 7, wherein the surface includes a wavy surface.
The film forming apparatus according to any one of claims 1 to 8, wherein a tip portion of the vapor deposition head provided with the spray port is configured by a tapered surface.
Cooling the shutter during a period in which the shutter is disposed at a position that blocks gas containing gas molecules of the vapor deposition material from the ejection port of the vapor deposition head;
Retracting the shutter from the position;
Depositing a deposition material on a substrate to be treated by the gas from the deposition head;
A film forming method including:
The film forming method according to claim 10, further comprising a step of heating the shutter after the film forming step.