CN109689926A - Evaporation coating device - Google Patents
Evaporation coating device Download PDFInfo
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- CN109689926A CN109689926A CN201780054794.1A CN201780054794A CN109689926A CN 109689926 A CN109689926 A CN 109689926A CN 201780054794 A CN201780054794 A CN 201780054794A CN 109689926 A CN109689926 A CN 109689926A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
Abstract
Technical purpose of the invention is to provide a kind of evaporation coating device of the surface from the contaminants being sticked on vapor deposition nozzle for capableing of protective substrate.Thus, evaporation coating device of the invention for more than one film formation substance to be deposited on substrate includes: the first linear evaporation source, has the first conducting tube so that for arranging the first film formation in long way along a first direction with nozzle with multiple vapor depositions in surge to aforesaid substrate；Fixed blocking parts, including passage area portion and occlusion area portion, above-mentioned passage area portion is set between above-mentioned first conducting tube and aforesaid substrate, for passing through a part of the above-mentioned the first film formation substance sprayed towards aforesaid substrate, above-mentioned occlusion area portion is used to stop the remainder of the first film formation substance；And the first anti-pollution component, it is set to above-mentioned fixed blocking parts, is moved to aforesaid substrate at least one of nozzle vapor deposition with the pollutant on nozzle for preventing from being sticked to multiple above-mentioned vapor depositions.
Description
Technical field
It the present invention relates to the use of the evaporation coating device of linear evaporation source.
Background technique
In general, forming the film made of predetermined substance in semiconductor fabrication process in wafer surface or manufacturing
During large flat display device, evaporation coating device is used on the surface in glass substrate etc. be formed the thin of required substance
Film.
This evaporation coating device includes: vacuum chamber；Mounting portion, for chip or substrate to be arranged (hereinafter referred to as in vacuum chamber
" substrate ")；And linear evaporation source, for making film formation be evaporated to substrate surface with substance.
In particular, linear evaporation source includes: crucible, for holding film formation substance；Heater is used for heating crucible；
And multiple be deposited uses nozzles, linear array, the film formation surge for that will heat to the surface of substrate.
However, traditional evaporation coating device is sprayed in the presence of the pollutant for being sticked to vapor deposition nozzle or falls and pollute substrate
The problem of surface.
Moreover, causing the film being deposited on the surface of the substrate to be formed in the presence of because of the amount of injection of each vapor deposition nozzle difference
Deviation is led to the problem of with the evaporation thickness of substance.That is, there are the following problems: in linear evaporation source, with film formation object
On the basis of the moving direction of matter, the amount of injection of the vapor deposition for the being located relatively at rear end side nozzle in each vapor deposition nozzle is possible to
It is relatively small, deviation is generated so as to cause the evaporation thickness on substrate.
Also, even if two different film formation substances are deposited using two linear evaporation sources, for generating
The temperature (hereinafter referred to as " required vapor deposition rate generates temperature ") of the vapor deposition rate needed is also different, and there are two kinds of films to be formed
Deviation is led to the problem of with substance vapor deposition rate.For example, when the crucible temperature of each linear evaporation source is identical, for required vapor deposition
Rate generates the relatively high film formation substance of temperature, there is a problem of that vapor deposition rate is relatively low, by improving linear evaporation
In the case where vapor deposition rate of the crucible temperature in source to improve the film formation substance for generating temperature with vapor deposition rate needed for height, deposit
The problem of the thermal stability of linear evaporation source reduces.
Summary of the invention
Technical problem
It is an object of the present invention to provide a kind of following evaporation coating devices, that is, can protective substrate surface used from being sticked to vapor deposition
Contaminants on nozzle.
Another object of the present invention is to provide following evaporation coating device, that is, the film for being vaporized on substrate surface can be made to be formed
It is minimized with the deviation of the evaporation thickness of substance.
Another object of the present invention is to provide following evaporation coating device, that is, above-mentioned evaporation coating device can be deposited at least two simultaneously
There is kind the film of the different temperature (hereinafter referred to as " required vapor deposition rate temperature ") for generating required vapor deposition rate to form use
Substance, and vapor deposition rate relative reduction is prevented, while can ensure that the thermal stability of linear evaporation source.
Further object of the invention is to provide following evaporation coating device, that is, above-mentioned evaporation coating device can make at least two
The vapor deposition rate of different film formation substances is more identical than all positions as far as possible on substrate.
Solution to problem
To achieve the goals above, implement for the present invention of more than one film formation substance to be deposited on substrate
The evaporation coating device of example includes: the first linear evaporation source, is had so that being used for the first film formation surge to above-mentioned base
The first conducting tube that multiple vapor depositions on plate are arranged in long way along a first direction with nozzle；Fixed blocking parts, including it is logical
Road region portion and occlusion area portion, above-mentioned passage area portion are set between above-mentioned first conducting tube and aforesaid substrate, are used for
So that a part of the above-mentioned the first film formation substance sprayed passes through towards aforesaid substrate, above-mentioned occlusion area portion is used for
The first film is stopped to form the remainder for using substance；And the first anti-pollution component, it is set to above-mentioned fixed blocking parts,
Aforesaid substrate is moved to at least one of nozzle vapor deposition with the pollutant on nozzle for preventing from being sticked to multiple above-mentioned vapor depositions.
Above-mentioned first anti-pollution component can be led to above-mentioned passage area part for first by crossing above-mentioned passage area
Road region and second channel region.
Above-mentioned first anti-pollution component can cross above-mentioned passage area portion along a first direction to be arranged in long way, Duo Geshang
Stating vapor deposition can be arranged with nozzle in a manner of corresponding to the above-mentioned first anti-pollution component.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include the first rotary-type blocking parts, above-mentioned first rotary-type screening
Stopper part is set to above-mentioned fixed blocking parts in a manner of it can rotate by first axle axis, logical for adjusting above-mentioned first
The width in road region.
Above-mentioned first axle axis may be disposed at the above-mentioned occlusion area portion of above-mentioned fixed blocking parts, and be arranged opposite
In the vertical position in the center of the side of the above-mentioned first anti-pollution component.
By the rotation of the first rotary-type blocking parts, the width in above-mentioned first passage region is towards above-mentioned first conducting tube
Front end gradually linearly reduce and gradually linearly increase towards the end of above-mentioned first conducting tube.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include the second rotary-type blocking parts, above-mentioned second rotary-type screening
Stopper part is set to above-mentioned fixed blocking parts in a manner of it can rotate by second hinge axis, for so that second channel area
The width in domain gradually linearly reduces towards the front end of above-mentioned first conducting tube and towards the end of above-mentioned first conducting tube gradually line
Property the mode that increases adjust the width in above-mentioned second channel region.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include that the first driving portion and the second driving portion, respectively to above-mentioned
First rotary-type blocking parts and above-mentioned second rotary-type blocking parts apply rotary force；Front end side vapor deposition rate sensor, setting
The first part corresponding to above-mentioned first conducting tube front end in the above-mentioned occlusion area portion of above-mentioned fixed blocking parts
To measure vapor deposition rate；And end side vapor deposition rate sensor, it is set to the above-mentioned occlusion area portion of above-mentioned fixed blocking parts
In the second part of terminal part corresponding to above-mentioned first conducting tube measure vapor deposition rate.
It is passed if being greater than by the front end side vapor deposition rate of above-mentioned front end side vapor deposition rate sensor measurement by above-mentioned rear end side vapor deposition rate
The end side vapor deposition rate of sensor measurement, then above-mentioned first driving portion and above-mentioned second driving portion make the first rotary-type occlusion part respectively
Part and second rotary-type each spinning of blocking parts, come so that above-mentioned first passage region and above-mentioned second channel region are respective
Width gradually linearly reduces towards the front end of above-mentioned first conducting tube and gradually linearly increases towards the end of above-mentioned first conducting tube
Greatly.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include that the second conducting tube, positioned at a left side for above-mentioned first conducting tube
Side, for guiding the second film formation substance；And third conducting tube, positioned at the right side of above-mentioned first conducting tube, for drawing
The third film formation substance for belonging to substance identical with above-mentioned second film formation substance is led, above-mentioned second film is formed
It is to be higher than for generating the required vapor deposition rate generation temperature of required vapor deposition rate with substance and above-mentioned third film formation substance
State the substance of the first film formation substance.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include that the second anti-pollution component, is set to above-mentioned fixed and hides
Stopper part is arranged in a manner of corresponding with above-mentioned second conducting tube；And the anti-pollution component of third, it is set to above-mentioned fixed
Blocking parts is arranged in a manner of corresponding with above-mentioned third conducting tube.
Above-mentioned second conducting tube and above-mentioned third conducting tube can be respectively included in mutually different second linear evaporation source and
Third linear evaporation source.
Above-mentioned second conducting tube and above-mentioned third conducting tube can be parallel to the first conducting tube, above-mentioned second conducting tube, above-mentioned
First conducting tube and above-mentioned third conducting tube can be conducted by above-mentioned second conducting tube, above-mentioned first conducting tube and above-mentioned third
The sequence of pipe is arranged to arc-shaped.
The center of above-mentioned circular arc can be located at the first part of aforesaid substrate, and above-mentioned first part can be and above-mentioned passage area
The corresponding part in the center in portion.
The above-mentioned evaporation coating device of the embodiment of the present invention, which may also include, is respectively arranged at above-mentioned first conducting tube, the second conducting tube
And third conducting tube measures the more than one vapor deposition rate determination part of vapor deposition rate respectively.
Above-mentioned vapor deposition rate determination part can include: measurement use nozzle, respectively with above-mentioned first conducting tube, the second conducting tube and
The connection of third conducting tube；Measurement conducting tube, one end are respectively arranged at above-mentioned first conducting tube, the second conducting tube and third and pass
Conduit, for guiding the film formation substance sprayed from said determination with nozzle；And conducting tube side vapor deposition rate sensor, if
It is placed in the other end of said determination conducting tube, for measuring the vapor deposition rate of the above-mentioned film formation substance sprayed.
More than one above-mentioned vapor deposition rate determination part can include: front end side vapor deposition rate determination part is set to above-mentioned first and passes
Conduit, the second conducting tube, the respective front end of third conducting tube, to measure respective vapor deposition rate；And end side vapor deposition rate is surveyed
Determine portion, above-mentioned first conducting tube, the second conducting tube, the respective terminal part of third conducting tube is set to, to measure respective vapor deposition
Rate.
The above-mentioned evaporation coating device of the embodiment of the present invention may also include base plate transfer portion, above-mentioned for transferring along second direction
Substrate, above-mentioned first direction and above-mentioned second direction are mutually perpendicular to.
The effect of invention
As described above, the evaporation coating device of the embodiment of the present invention can have following effect.
According to an embodiment of the invention, provided technical pattern includes: the first linear evaporation source, have for guiding the
One film forms the first conducting tube for using substance；Fixed blocking parts has passage area portion and occlusion area portion；And the
Therefore one anti-pollution component may make the pollutant for being sticked to one or more of multiple vapor deposition nozzles of the first conducting tube to exist
It is moved to before substrate surface by the first anti-pollution member obstruction, so as to protective substrate surface from pollution.
Also, according to an embodiment of the invention, due to the provision of the technical pattern for further including the first rotary-type blocking parts,
Even if therefore the amount of injection of each vapor deposition nozzle is gradually reduced towards the rear end of the first conducting tube, the of fixed blocking parts
The width of one passage area gradually linearly reduces due to the rotation of the first rotary-type blocking parts towards the front end of the first conducting tube
And gradually linearly increase towards the rear end of the first conducting tube, it may make the producible base of length direction relative to the first conducting tube
The deviation of evaporation thickness on plate minimizes.
Also, according to an embodiment of the invention, providing further includes guiding the second film formation substance and third respectively
Film forms the technical pattern of the second conducting tube and third conducting tube with substance, therefore, even if belonging to the second of same substance
Film, which is formed, use substance and third film to be formed the required vapor deposition rate of substance use to generate temperature higher than as the of another kind substance
One film, which is formed, generates temperature with the required vapor deposition rate of substance, and the second film formation substance and the third for belonging to same substance are thin
Film formation use substance from as two conducting tubes the second conducting tube and the supply of third conducting tube, in the vapor deposition rate phase for preventing substance
It is sufficiently operated to while reduction temperature can be generated with the required vapor deposition rate of relatively low the first film formation substance, thus
It can ensure that the thermal stability of each linear evaporation source.For example, in the first linear evaporation source, the second linear evaporation source and third linear
In the identical situation of the crucible temperature of evaporation source, for required vapor deposition rate generates the relatively high film formation substance of temperature,
Also it can belong to the second film formation substance and the of same substance from the second linear evaporation source and the supply of third linear evaporation source
Three films, which are formed, uses substance, thus the problem of the vapor deposition rate relative drop of substance can be prevented, it at the same time, can be with relatively low
The first film, which is formed, generates temperature operating with the required vapor deposition rate of substance, to can ensure that the thermostabilization of each linear evaporation source
Property.
Also, according to an embodiment of the invention, provide the second conducting tube and third conducting tube be parallel to the first conducting tube and
So that the second conducting tube, the first conducting tube and third conducting tube press the second conducting tube, the first conducting tube and third conducting tube
Sequence be arranged in the technical pattern of arc-shaped and therefore can make the vapor deposition rate ratio of at least two different film formation substances
All positions as far as possible on substrate are identical.
Detailed description of the invention
Fig. 1 be schematically illustrate first embodiment of the invention, second embodiment, 3rd embodiment respectively in evaporation coating device
The partial cutaway sectional view of the linear evaporation source used.
Fig. 2 is the figure for schematically illustrating the evaporation coating device of first embodiment of the invention.
Fig. 3 is the figure of the evaporation coating device in Fig. 2 that the first conducting tube is observed.
Fig. 4 is the figure shown in the evaporation coating device of the variation of the first embodiment of the invention of the first conducting tube observation.
Fig. 5 is the figure for schematically illustrating the evaporation coating device of second embodiment of the invention.
Fig. 6 is the figure for schematically illustrating the evaporation coating device of third embodiment of the invention.
Fig. 7 is based on the transfer coordinate of substrate in the evaporation coating device shown in Fig. 5 come the variation of the vapor deposition rate generated
Curve graph.
Fig. 8 is based on the transfer coordinate of substrate in the evaporation coating device shown in Fig. 6 come the variation of the vapor deposition rate generated
Curve graph.
Fig. 9 be to the evaporation coating device (being configured to linear type) in Fig. 5 and the evaporation coating device (being configured to arc-shaped) in Fig. 6 into
Row compares, the curve graph of the variation for the vapor deposition rate ratio for showing the transfer coordinate based on substrate to generate.
(a) of Figure 10 is partially the figure for schematically illustrating the vapor deposition rate determination part for being set to each conducting tube, portion (b) of Figure 10
It is divided into the front end side vapor deposition rate determination part for showing the front-end and back-end for being respectively arranged at conducting tube and rear end side vapor deposition rate determination part
Figure.
Specific embodiment
Hereinafter, with reference to the accompanying drawings, the embodiment of the present invention is described in detail, in order to technology belonging to the present invention
The those of ordinary skill in field implements.However, the present invention can be embodied with a variety of different embodiments, it is not limited to say herein
Bright embodiment.
Fig. 1 be schematically illustrate first embodiment of the invention, second embodiment, 3rd embodiment respectively in evaporation coating device
The partial cutaway sectional view of the linear evaporation source used, Fig. 2 are the figure for schematically illustrating the evaporation coating device of first embodiment of the invention,
Moreover, Fig. 3 is the figure of the evaporation coating device in Fig. 2 that the first conducting tube is observed.
As shown in Figure 1 to Figure 3, the evaporation coating device 100 of first embodiment of the invention is for one kind to be deposited on the substrate 10
Above film forms the evaporation coating device for using substance, including the first linear evaporation source 110, fixed blocking parts 120 and the
One anti-pollution component 130.Hereinafter, with continued reference to Fig. 1 to Fig. 3, each structural element is described in detail.
As shown in Figures 1 and 2, the first linear evaporation source 110 is by evaporating the first film formation substance A and spraying
To the device of substrate 10.For example, as shown in Figure 1, the first linear evaporation source 110 can include: crucible 113 is thin for installing first
Substance A is used in film formation；First conducting tube 112, in order to guide the first film formation substance in crucible 113 along a first direction
A and arrange in long way along a first direction；Heater 114 is used for heating crucible 113 and the first conducting tube 112；And multiple steamings
Plating nozzle 111, along the length direction linear array of the first conducting tube 112, for spraying the first conducting tube 112 to substrate 10
The first film formation use substance A.As reference, on the basis of Fig. 1, the front end of the first conducting tube 112 is the left side in Fig. 1
Point, belong to the part adjacent with crucible 113, the end of the first conducting tube 112 is the right part in Fig. 1, is belonged to apart from crucible
113 farthest parts.Also, when using Fig. 3 as benchmark, although the first conducting tube 112 is not shown in Fig. 3, to assume
The mode at the front end of one conducting tube 112 towards the top of Fig. 3 and end towards the bottom of Fig. 1 of the first conducting tube 112 is shown.
As shown in Figures 2 and 3, fixed blocking parts 120 is so that first sprayed from each vapor deposition nozzle 111
Film formation is only channeled to the structural element of the mode shield portions of substrate 10 with substance A.For example, as shown in Figures 2 and 3,
Fixed blocking parts 120 can include: passage area portion 121 is set between the first conducting tube 112 and substrate 10, for making
The a part for obtaining sprayed the first film formation substance A passes through towards substrate 10, so that substance A is used in the first film formation
It is directed into the vapor deposition region of substrate 10；And occlusion area portion 122, for stopping direction in the first film formation substance A
Rest part other than the vapor deposition region of substrate 10.
First anti-pollution component 130 is to prevent from being sticked at least one of multiple vapor deposition nozzles 111 vapor deposition nozzle
Pollutant can be set in fixed blocking parts 120 as shown in Figures 2 and 3 to the mobile structural element of substrate 10.Therefore,
The pollutant of at least one of multiple vapor deposition nozzles 111 of the first conducting tube 112 is sticked to mobile to the surface of substrate 10
Stopped before by the first anti-pollution component 130, so that the surface of protective substrate 10 is from contaminants.
Meanwhile as shown in figure 3, the first anti-pollution component 130 can be by crossing passage area portion 121 for passage area portion
121 points are first passage region 121a and second channel region 121b.Also, the first anti-pollution component 130 can be by crossing
Passage area portion 121 to be arranged in long way along above-mentioned first direction (referring to Fig. 3), and multiple vapor deposition nozzles 111 are with will be opposite
It is arranged come mode corresponding with the first anti-pollution component 130 (referring to Fig. 2) in the vertical range of substrate 10 as benchmark.
At the same time, as shown in Figures 2 and 3, the above-mentioned evaporation coating device 100 of first embodiment of the invention may also include first
Rotary-type blocking parts 140.First rotary-type blocking parts 140 by way of 141 rotation of first axle axis can be set to
Fixed blocking parts 120, for adjusting the width of first passage region 121a (referring to " W " in Fig. 3).Therefore, can pass through
The width (referring to " W " in Fig. 3) of first passage region 121a is adjusted, to make that the first film shape on the surface of the substrate 10 is deposited
It is minimized at the deviation of the evaporation thickness with substance A.
In particular, as shown in figure 3, first axle axis 141 may be disposed at the occlusion area portion 122 of fixed blocking parts 120
And the vertical position in center of the side relative to the first anti-pollution component 130.In turn, as shown in figure 3, first passage region
The width (referring to " W " in Fig. 3) of 121a can be by the rotation of the first rotary-type blocking parts 140 come the first conducting tube of direction
112 front end gradually linearly reduces and gradually linearly increases towards the end of the first conducting tube 112.Even if each vapor deposition as a result,
It is gradually reduced with the rear end of the amount of injection of nozzle 111 towards the first conducting tube 112, but due to the of fixed blocking parts 120
The width (referring to " W " of Fig. 3) of one passage area 121a can be by the rotation of the first rotary-type blocking parts 140 come direction first
The front end of conducting tube 112 gradually linearly reduces and gradually linearly increases towards the end of the first conducting tube 112, thus may make
The deviation for the evaporation thickness being possible on the substrate 10 generated on the length direction of first conducting tube is further minimized.
At the same time, as shown in Figures 2 and 3, the evaporation coating device 100 of first embodiment of the invention may also include can pass through
The mode that second hinge axis 151 rotates is set to the second rotary-type blocking parts 150 of fixed blocking parts 120, and above-mentioned the
Two rotary-type blocking parts 150 can be with the width W of second channel region 121b towards the front end of the first conducting tube 112 gradually line
Property reduce and adjust towards the mode that gradually linearly increases of end of the first conducting tube 112 width of second channel region 121b.
Therefore, for the first film formation substance A of the second channel region 121b by fixed blocking parts 120, can also make
The deviation of evaporation thickness on substrate 10 minimizes.
At the same time, it as shown in Fig. 2, the evaporation coating device of first embodiment of the invention may also include base plate transfer portion 190, uses
In along second direction transfer substrate 10.Wherein, second direction can be perpendicular to first direction.
Hereinafter, referring to Fig. 4, the evaporation coating device of the variation for first embodiment that the present invention will be described in detail.
Fig. 4 is the figure shown in the evaporation coating device of the variation of the first embodiment of the invention of the first conducting tube observation.
As shown in figure 4, in the evaporation coating device of the variation of first embodiment of the invention, in addition to further including the first driving portion
161 and second driving portion 162, front end side vapor deposition rate sensor 170 and end side vapor deposition rate sensor 180 other than, and it is as above
The first embodiment of the present invention is identical, therefore, main the first driving portion 161 of explanation and the second driving portion 162, preceding below
End side vapor deposition rate sensor 170 and end side vapor deposition rate sensor 180.
First driving portion 161 and the second driving portion 162 are respectively respectively to the first rotary-type blocking parts 140 and the second rotation
The blocking parts 150 that makes the transition applies the structural element of rotary force.For example, horse can be used in the first driving portion 161 and the second driving portion 162
It reaches.
Front end side vapor deposition rate sensor 170 is the correspondence being set in the occlusion area portion 122 of fixed blocking parts 120
The structural element of vapor deposition rate, end side vapor deposition rate sensor 180 are measured in the first part of the front end of the first conducting tube 112
It is the second of the terminal part corresponding to the first conducting tube 112 being set in the occlusion area portion 122 of fixed blocking parts 120
Part measures the structural element of vapor deposition rate.
Therefore, it is passed if being greater than by the front end side vapor deposition rate that front end side vapor deposition rate sensor 170 measures by end side vapor deposition rate
The end side vapor deposition rate that sensor 180 measures, then the first driving portion 161 and the second driving portion 162 make first rotary-type to block respectively
Component 140 and second each spinning of rotary-type blocking parts 150, come so that first passage region 121a and second channel region
The respective width W of 121b gradually linearly reduce towards the front end of the first conducting tube 112 and towards the end of the first conducting tube 112 by
It is gradually linear to increase, so that the deviation of the evaporation thickness on substrate 10 be made to be further minimized.
Hereinafter, illustrating the evaporation coating device 200 of second embodiment of the invention referring to Fig. 5.
Fig. 5 is the figure for schematically illustrating the evaporation coating device of second embodiment of the invention.
As shown in figure 5, in the evaporation coating device 200 of second embodiment of the invention, in addition to further including 222 He of the second conducting tube
It is identical as the variation of first embodiment present invention as described above other than third conducting tube 232, therefore, main explanation below
Second conducting tube 222 and third conducting tube 232.
Second conducting tube 222 is located at the left side (left side on the basis of Fig. 5) of the first conducting tube 112, for guiding second
Film, which is formed, uses substance B -1, and third conducting tube 232 is located at the right side (right side on the basis of Fig. 5) of the first conducting tube 112, uses
Belong to the third film formation substance B -2 of substance identical with the second film formation substance B -1 in guidance.In particular, belonging to
Second film formation substance B -1 of same substance and the required vapor deposition rate of third film formation substance B -2 generate temperature can
Temperature is generated to be higher than the required vapor deposition rate for the first film formation substance A for belonging to different material.In turn, the second conducting tube
222, the first conducting tube 112 and third conducting tube 232 can be configured on the straight line L parallel with substrate 10 with linear type.And
And second conducting tube 222 and third conducting tube 232 be respectively included in mutually different second linear evaporation source 220 and third line
Property evaporation source 230 (referring to Fig.1).
Therefore, even if belonging to the second film formation substance B -1 and third film formation substance B -2 of same substance
Required vapor deposition rate generates the required vapor deposition rate generation temperature that temperature is higher than the first film formation substance A for belonging to different material,
But the second film formation for belonging to same substance uses substance B -1 and third film formation to use substance B -2 from as two conducting tubes
The second conducting tube 222 and third conducting tube 232 supply, therefore, can while the vapor deposition rate relative reduction for preventing substance
Vapor deposition rate needed for temperature is sufficiently realized is generated with the required vapor deposition rate of relatively low the first film formation substance A, so as to true
Protect the thermal stability of each linear evaporation source 110,220,230.For example, in the first linear evaporation source 110, the second linear evaporation source
220, in the identical situation of temperature of the crucible 113 of third linear evaporation source 230, for being produced with relatively high required vapor deposition rate
The film of raw temperature, which is formed, uses substance, can belong to from the second linear evaporation source 220 and the supply of third linear evaporation source 230 identical
Second film of substance, which forms to be formed with substance B -1 and third film, uses substance B -2, it is therefore possible to prevent the vapor deposition rate of this substance
The problem of relative drop, can generate temperature at the same time with the required vapor deposition rate of relatively low the first film formation substance A
Vapor deposition rate needed for sufficiently obtaining, so as to ensure the respective thermal stability of linear evaporation source 110,220,230.
At the same time, as shown in figure 5, the evaporation coating device 200 of above-mentioned second embodiment of the invention to may also include second anti-
Contaminated Parts 240 and the anti-pollution component 250 of third.Second anti-pollution component 240 is set to fixed blocking parts 120, can
It is arranged in a manner of corresponding with the second conducting tube 222 on the basis of the vertical range relative to substrate 10, third is anti-pollution
Component 250 is set to fixed blocking parts 120, can be on the basis of the vertical range relative to substrate 10 come to pass with third
The corresponding mode of conduit 232 is arranged.Therefore, the steaming for being sticked to the second conducting tube 222 can be stopped by the second anti-pollution component 240
Pollutant on plating nozzle simultaneously prevents from being moved to substrate 10, can be sticked to third conduction by the anti-pollution blocking of component 250 of third
Pollutant on the vapor deposition nozzle of pipe 232 simultaneously prevents from being moved to substrate 10.
Hereinafter, illustrating the evaporation coating device 300 of third embodiment of the invention referring to Fig. 6 to Figure 10.
Fig. 6 is the figure for schematically illustrating the evaporation coating device of the third embodiment of the present invention, and Fig. 7 is the vapor deposition shown in Fig. 5
Based on the transfer coordinate of substrate come the curve graph of the variation of the vapor deposition rate generated in device, Fig. 8 is the vapor deposition dress shown in Fig. 6
Based on the transfer coordinate of substrate come the curve graph of the variation of the vapor deposition rate generated in setting, moreover, Fig. 9 is to fill to the vapor deposition in Fig. 5
It sets and (is configured to linear type) and the evaporation coating device of Fig. 6 (being configured to arc-shaped) is compared, the transfer coordinate based on substrate is shown
Come the curve graph of the variation of the vapor deposition rate ratio generated.
(a) of Figure 10 partially schematically illustrates the figure for being set to the vapor deposition rate determination part of each conducting tube, part (b) of Figure 10
The figure of the front end side vapor deposition rate determination part for being respectively arranged at the front-end and back-end of conducting tube and rear end side vapor deposition rate determination part is shown.
As shown in fig. 6, in the evaporation coating device 300 of third embodiment of the invention, except the first conducting tube 112, second conducts
It is identical as second embodiment present invention as described above except the configuration of pipe 222 and third conducting tube 232, therefore, with
The configuration of the first conducting tube 112 of lower main explanation, the second conducting tube 222 and third conducting tube 232.
Second conducting tube 222 and third conducting tube 232 can be parallel to the first conducting tube 112, the second conducting tube 222, first
Conducting tube 112 and third conducting tube 232 can be by the second conducting tube 222, the first conducting tube 112 and third conducting tubes 232
Sequence be arranged to arc-shaped (310 in Fig. 6).Therefore, because the vapor deposition rate (evaporation thickness) of substrate 10 and vapor deposition nozzle
Distance square is inversely proportional, therefore, as described above, the second conducting tube 222 and third conducting tube 232 are at its center first
Be inclined to arc-shaped on the basis of conducting tube 112, thus may make the second film formation substance B -1 for belonging to same substance and
Between the vapor deposition rate of third film formation substance B -2 and the vapor deposition rate of the first film formation substance A for belonging to different material
Vapor deposition rate ratio deviation minimize.
Through experimental confirmation as a result, such as the second embodiment of the present invention, in the second conducting tube 222, the first conducting tube 112
And third conducting tube 232 is configured in linear situation, as shown in fig. 7, the first film formation substance can be confirmed
A, the vapor deposition rate of the second film formation substance B -1 and third film formation substance B -2 is distributed the transfer according to substrate 10
Coordinate and it is different.
On the contrary, through experimental confirmation as a result, being conducted in the second conducting tube 222, first such as the third embodiment of the present invention
In the case that pipe 112 and third conducting tube 232 are configured to arc-shaped, as shown in figure 8, the first film, which is formed, uses substance A, second
The distribution of the vapor deposition rate of film formation substance B -1 and third film formation substance B -2 is most according to the transfer coordinate of substrate 10
It may be identical.In particular, as shown in figure 9, through experimental confirmation as a result, being configured in a manner of the second embodiment of the present invention
In linear situation, according to the position of substrate 10, vapor deposition rate ratio changes, on the contrary, with present invention as described above
In the case that the mode of three embodiments is configured to arc-shaped, belong to the second film formation substance B -1 and third of same substance
The vapor deposition rate of film formation substance B -2 and belong to different material the first film formation substance A vapor deposition rate between ratio
All positions on substrate substantially show identical value (2.0).This is because real with third present invention as described above
Apply example mode be configured to arc-shaped in the case where, all positions on the substrate 10 can be with identical ratio of components
Close object, that is, the sum of the second film formation substance B -1 and third film formation substance B -2 and the first film shape can be obtained
At between substance A be in 2:1.
In turn, for example, as shown in fig. 6, the center AC of above-mentioned circular arc 310 can be located at the first part on substrate 10, the
A part can be part corresponding with the center in passage area portion 121.
At the same time, as shown in part (a) of Figure 10, the evaporation coating device 300 of third embodiment of the invention may also include point
It is not set to above-mentioned first conducting tube 112, the second conducting tube 222 and third conducting tube 232 to measure the one of vapor deposition rate respectively
A above vapor deposition rate determination part 320.Therefore, vapor deposition rate can be independently measured for each conducting tube 112,222,232,
And it can more accurately manage vapor deposition rate.
For example, each vapor deposition rate determination part 320 may include measurement nozzle 321, measurement as shown in part (b) of Figure 10
With conducting tube 322 and conducting tube side vapor deposition rate sensor 323.Measurement nozzle 321 can respectively with the first conducting tube 112,
Two conducting tubes 222 and third conducting tube 232 are connected to, and measurement is set to each first conducting tube with one end of conducting tube 322
112, the second conducting tube 222 and third conducting tube 232, for guiding the film formation object sprayed from measurement with nozzle 321
Matter, also, conducting tube side vapor deposition rate sensor 323 can be sprayed by being set to measurement with the other end of conducting tube 322 to measure
The vapor deposition rate for the film formation substance penetrated.In particular, can be also arranged with conducting tube 322 so that from measurement conducting tube in measurement
The coolant jacket (non-diagram) for cooling measurement 322 inner wall of conducting tube of mode that the influence of the substance of 322 inner wall release minimizes.
In turn, measurement with one end of conducting tube 322 by the combining unit (non-diagram) of flange etc. come respectively with the first conducting tube 112,
Second conducting tube 222 and third conducting tube 232 combine, and the other end of measurement conducting tube 322 can also pass through flange etc.
Combining unit (non-diagram) combine with the module of conducting tube side vapor deposition rate sensor 323.
In turn, it is contemplated that the front end of conducting tube is different from the vapor deposition rate of terminal part, as shown in (b) of Figure 10, one with
On vapor deposition rate determination part 320 can include: front end side vapor deposition rate determination part 320, be set to the first conducting tube 112, second conduction
Pipe 222 and the respective front end of third conducting tube 232, to measure respective vapor deposition rate；And end side vapor deposition rate determination part
320, it is set to the first conducting tube 112, the second conducting tube 222 and the respective terminal part of third conducting tube 232, it is respective to measure
Vapor deposition rate.
More than, the preferred embodiment of the present invention is described in detail, but interest field of the invention is not limited to
This, using basic conception of the invention defined in the claimed range of invention of the invention come by those skilled in the art into
Capable various deformation and improvement embodiment also belongs to interest field of the invention.
Industrial availability
The evaporation coating device that the present invention relates to the use of linear evaporation source can be used for the production of semiconductor etc., to have industry
On utilizability.
Claims (18)
1. a kind of evaporation coating device, for more than one film formation substance to be deposited on substrate characterized by comprising
First linear evaporation source has so that being used for multiple vapor depositions in the first film formation surge to aforesaid substrate
The first conducting tube arranged in long way along a first direction with nozzle；
Fixed blocking parts, including passage area portion and occlusion area portion, above-mentioned passage area portion are set to above-mentioned first
Between conducting tube and aforesaid substrate, for so that a part of the above-mentioned the first film formation substance sprayed towards above-mentioned base
Plate passes through, and above-mentioned occlusion area portion is used to stop the remainder of the first film formation substance；And
First anti-pollution component is set to above-mentioned fixed blocking parts, is sticked in multiple above-mentioned vapor deposition nozzles for preventing
At least one vapor deposition be moved to aforesaid substrate with the pollutant on nozzle.
2. evaporation coating device according to claim 1, which is characterized in that
Above-mentioned first anti-pollution component is first passage region by crossing above-mentioned passage area for above-mentioned passage area part
And second channel region.
3. evaporation coating device according to claim 2, which is characterized in that
Above-mentioned first anti-pollution component crosses above-mentioned passage area portion along a first direction to be arranged in long way,
Multiple above-mentioned vapor depositions are arranged in a manner of corresponding to the above-mentioned first anti-pollution component with nozzle.
4. evaporation coating device according to claim 2, which is characterized in that
Above-mentioned evaporation coating device further includes the first rotary-type blocking parts, and above-mentioned first rotary-type blocking parts is to pass through first axle
The mode of axis rotation is set to above-mentioned fixed blocking parts, for adjusting the width in above-mentioned first passage region.
5. evaporation coating device according to claim 4, which is characterized in that
Above-mentioned first axle axis is set to the above-mentioned occlusion area portion of above-mentioned fixed blocking parts, and is disposed relative to above-mentioned
The vertical position in the center of the side of first anti-pollution component.
6. evaporation coating device according to claim 5, which is characterized in that
By the rotation of the first rotary-type blocking parts, the width in above-mentioned first passage region is towards before above-mentioned first conducting tube
End gradually linearly reduces and gradually linearly increases towards the end of above-mentioned first conducting tube.
7. evaporation coating device according to claim 6, which is characterized in that
Above-mentioned evaporation coating device further includes the second rotary-type blocking parts, and above-mentioned second rotary-type blocking parts is to pass through second hinge
The mode of axis rotation is set to above-mentioned fixed blocking parts, for so that the width in second channel region is passed towards above-mentioned first
The front end of conduit gradually linearly reduces and adjusts above-mentioned the towards the mode that the end of above-mentioned first conducting tube gradually linearly increases
The width of two passage areas.
8. evaporation coating device according to claim 7, which is characterized in that
Above-mentioned evaporation coating device further include:
First driving portion and the second driving portion, respectively to the above-mentioned first rotary-type blocking parts and above-mentioned second rotary-type occlusion part
Part applies rotary force；
Front end side vapor deposition rate sensor, be set in the above-mentioned occlusion area portion of above-mentioned fixed blocking parts correspond to it is above-mentioned
The first part of first conducting tube front end measures vapor deposition rate；And
End side vapor deposition rate sensor, be set in the above-mentioned occlusion area portion of above-mentioned fixed blocking parts correspond to it is above-mentioned
The second part of the terminal part of first conducting tube measures vapor deposition rate.
9. evaporation coating device according to claim 8, which is characterized in that
If being greater than by the front end side vapor deposition rate of above-mentioned front end side vapor deposition rate sensor measurement by above-mentioned rear end side vapor deposition rate sensor
The end side vapor deposition rate of measurement, then above-mentioned first driving portion and above-mentioned second driving portion make respectively the first rotary-type blocking parts and
Second rotary-type each spinning of blocking parts comes so that above-mentioned first passage region and the above-mentioned respective width in second channel region
Gradually linearly reduce towards the front end of above-mentioned first conducting tube and gradually linearly increases towards the end of above-mentioned first conducting tube.
10. evaporation coating device according to claim 1, which is characterized in that
Above-mentioned evaporation coating device further include:
Second conducting tube, positioned at the left side of above-mentioned first conducting tube, for guiding the second film formation substance；And
Third conducting tube belongs to and above-mentioned second film formation substance positioned at the right side of above-mentioned first conducting tube for guiding
The third film of identical substance, which is formed, uses substance,
Above-mentioned second film formation substance and above-mentioned third film formation substance are for generating needed for required vapor deposition rate
Vapor deposition rate generates temperature and is higher than the substance that substance is used in the formation of above-mentioned the first film.
11. evaporation coating device according to claim 10, which is characterized in that
Above-mentioned evaporation coating device further include:
Second anti-pollution component is set to above-mentioned fixed blocking parts, is set in a manner of corresponding with above-mentioned second conducting tube
It sets；And
The anti-pollution component of third is set to above-mentioned fixed blocking parts, is set in a manner of corresponding with above-mentioned third conducting tube
It sets.
12. evaporation coating device according to claim 10, which is characterized in that
Above-mentioned second conducting tube and above-mentioned third conducting tube are respectively included in mutually different second linear evaporation source and third line
Property evaporation source.
13. evaporation coating device according to claim 10, which is characterized in that
Above-mentioned second conducting tube and above-mentioned third conducting tube are parallel to the first conducting tube,
Above-mentioned second conducting tube, above-mentioned first conducting tube and above-mentioned third conducting tube press above-mentioned second conducting tube, above-mentioned first
The sequence of conducting tube and above-mentioned third conducting tube is arranged to arc-shaped.
14. evaporation coating device according to claim 13, which is characterized in that
The center of above-mentioned circular arc is located at the first part of aforesaid substrate,
Above-mentioned first part is part corresponding with the center in above-mentioned passage area portion.
15. evaporation coating device according to claim 10, which is characterized in that
Above-mentioned evaporation coating device further includes being respectively arranged at above-mentioned first conducting tube, the second conducting tube and third conducting tube to distinguish
Measure the more than one vapor deposition rate determination part of vapor deposition rate.
16. evaporation coating device according to claim 15, which is characterized in that
Above-mentioned vapor deposition rate determination part includes:
Measurement nozzle, is connected to above-mentioned first conducting tube, the second conducting tube and third conducting tube respectively；
Measurement conducting tube, one end is respectively arranged at above-mentioned first conducting tube, the second conducting tube and third conducting tube, for drawing
Lead the film formation substance sprayed from said determination with nozzle；And
Conducting tube side vapor deposition rate sensor, is set to the other end of said determination conducting tube, for measure sprayed it is above-mentioned
Film forms the vapor deposition rate for using substance.
17. evaporation coating device according to claim 15, which is characterized in that
More than one above-mentioned vapor deposition rate determination part includes:
Front end side vapor deposition rate determination part is set to above-mentioned first conducting tube, the second conducting tube, the respective front end of third conducting tube
Portion, to measure respective vapor deposition rate；And
End side vapor deposition rate determination part is set to above-mentioned first conducting tube, the second conducting tube, the respective end of third conducting tube
Portion, to measure respective vapor deposition rate.
18. evaporation coating device according to claim 1, which is characterized in that
Above-mentioned evaporation coating device further includes base plate transfer portion, for transferring aforesaid substrate along second direction,
Above-mentioned first direction and above-mentioned second direction are mutually perpendicular to.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0118317 | 2016-09-13 | ||
| KR1020160118317A KR101839879B1 (en) | 2016-09-13 | 2016-09-13 | Deposition apparatus |
| PCT/KR2017/010016 WO2018052236A2 (en) | 2016-09-13 | 2017-09-13 | Deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109689926A true CN109689926A (en) | 2019-04-26 |
| CN109689926B CN109689926B (en) | 2021-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780054794.1A Active CN109689926B (en) | 2016-09-13 | 2017-09-13 | Evaporation plating device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6751820B2 (en) |
| KR (1) | KR101839879B1 (en) |
| CN (1) | CN109689926B (en) |
| WO (1) | WO2018052236A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113445006A (en) * | 2020-04-09 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Evaporation lining pot |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224275A (en) * | 2009-04-03 | 2011-10-19 | 东京毅力科创株式会社 | Deposition head and film forming apparatus |
| WO2012141151A1 (en) * | 2011-04-11 | 2012-10-18 | 東京エレクトロン株式会社 | Film-forming apparatus and film-forming method |
| CN202968676U (en) * | 2012-12-18 | 2013-06-05 | 汉能科技有限公司 | Linear evaporation source device |
| KR20140026100A (en) * | 2012-08-24 | 2014-03-05 | 주식회사 에스에프에이 | Apparatus to sputter |
| CN104233194A (en) * | 2013-06-13 | 2014-12-24 | 台积太阳能股份有限公司 | Evaporation apparatus and method |
| KR20150081857A (en) * | 2014-01-07 | 2015-07-15 | 주식회사 선익시스템 | Evaporation source for deposition apparatus |
| JP2015183229A (en) * | 2014-03-24 | 2015-10-22 | 株式会社日立ハイテクファインシステムズ | Vacuum vapor deposition apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080004816A (en) * | 2006-07-06 | 2008-01-10 | 세메스 주식회사 | Adaptive height evaporator |
| KR100964224B1 (en) | 2008-02-28 | 2010-06-17 | 삼성모바일디스플레이주식회사 | Evaporating apparatus and method for forming thin film |
| KR102044461B1 (en) * | 2013-05-20 | 2019-11-14 | 주식회사 선익시스템 | Apparatus for measuring thickness of deposition |
| KR20140136650A (en) * | 2013-05-21 | 2014-12-01 | 삼성디스플레이 주식회사 | Method for depositing a thin film |
-
2016
- 2016-09-13 KR KR1020160118317A patent/KR101839879B1/en active IP Right Grant
-
2017
- 2017-09-13 WO PCT/KR2017/010016 patent/WO2018052236A2/en active Application Filing
- 2017-09-13 CN CN201780054794.1A patent/CN109689926B/en active Active
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224275A (en) * | 2009-04-03 | 2011-10-19 | 东京毅力科创株式会社 | Deposition head and film forming apparatus |
| WO2012141151A1 (en) * | 2011-04-11 | 2012-10-18 | 東京エレクトロン株式会社 | Film-forming apparatus and film-forming method |
| KR20140026100A (en) * | 2012-08-24 | 2014-03-05 | 주식회사 에스에프에이 | Apparatus to sputter |
| CN202968676U (en) * | 2012-12-18 | 2013-06-05 | 汉能科技有限公司 | Linear evaporation source device |
| CN104233194A (en) * | 2013-06-13 | 2014-12-24 | 台积太阳能股份有限公司 | Evaporation apparatus and method |
| KR20150081857A (en) * | 2014-01-07 | 2015-07-15 | 주식회사 선익시스템 | Evaporation source for deposition apparatus |
| JP2015183229A (en) * | 2014-03-24 | 2015-10-22 | 株式会社日立ハイテクファインシステムズ | Vacuum vapor deposition apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113445006A (en) * | 2020-04-09 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Evaporation lining pot |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019529720A (en) | 2019-10-17 |
| CN109689926B (en) | 2021-02-26 |
| JP6751820B2 (en) | 2020-09-09 |
| WO2018052236A2 (en) | 2018-03-22 |
| WO2018052236A3 (en) | 2018-08-09 |
| KR101839879B1 (en) | 2018-03-19 |
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