TWI641709B - Material deposition arrangement, distrbution pipe, vacuum deposition chamber and method for vacuum deposition - Google Patents

Material deposition arrangement, distrbution pipe, vacuum deposition chamber and method for vacuum deposition Download PDF

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TWI641709B
TWI641709B TW104136582A TW104136582A TWI641709B TW I641709 B TWI641709 B TW I641709B TW 104136582 A TW104136582 A TW 104136582A TW 104136582 A TW104136582 A TW 104136582A TW I641709 B TWI641709 B TW I641709B
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distribution
nozzles
distribution pipe
nozzle
evaporated
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TW201629248A (en
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史丹分 班格特
安德率斯 露博
湯瑪士 爵伯勒
佑維 史奇伯勒
喬斯曼紐 地古坎柏
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美商應用材料股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Abstract

一種用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上之材料沈積配置(100)係說明。此材料沈積配置包括兩個材料源(100a、100b),各具有一分佈管(106a、106b)及一或多個噴嘴(712)。再者,一種包括一材料沈積配置之真空沈積腔室及一種用以沈積一已蒸發材料於一基板上之方法係說明。 A material deposition arrangement (100) for depositing evaporated material on a substrate (121) in a vacuum chamber (110) is described. This material deposition configuration includes two material sources (100a, 100b), each having a distribution tube (106a, 106b) and one or more nozzles (712). Furthermore, a vacuum deposition chamber including a material deposition configuration and a method for depositing an evaporated material on a substrate are described.

Description

用於真空沈積之材料沈積配置、分佈管、真空沈積腔室及方 法 Material deposition configuration, distribution tube, vacuum deposition chamber and method for vacuum deposition law

數個實施例是有關於一種材料沈積配置、一種用於一材料沈積配置之分佈管、具有一材料沈積配置之沈積設備、以及一種用於沈積一材料於一基板上之方法。數個實施例特別是有關於一種用於一真空沈積腔室之材料沈積配置、一種具有一材料沈積配置之真空沈積設備、及一種用於在一真空沈積腔室中沈積一材料於一基板上之方法。 Embodiments relate to a material deposition arrangement, a distribution tube for a material deposition arrangement, a deposition apparatus having a material deposition arrangement, and a method for depositing a material on a substrate. Embodiments relate in particular to a material deposition arrangement for a vacuum deposition chamber, a vacuum deposition apparatus having a material deposition arrangement, and a material for depositing a material on a substrate in a vacuum deposition chamber Method.

有機蒸發器係為用於生產有機發光二極體(organic light-emitting diodes,OLED)之器械。OLEDs係為發光二極體之一種特別形式,在OLEDs中,發光層包括特定之有機化合物之薄膜。OLEDs係使用於製造用於顯示資訊之電視螢幕、電腦螢幕、手機、其他手持裝置等。OLEDs可亦使用來做為一般空間的照明。OLED顯示器可能的顏色、亮度、及視角之範圍係較傳統之液晶顯示器(LCD)大,因為OLED像素係直接地發出光線而不使 用背光。因此,OLED顯示器之能量損耗係大量少於傳統之液晶顯示器的能量損耗。再者,OLEDs可製造於撓性基板上係產生更多之應用。典型之OLED顯示器舉例可包括位於兩個電極之間的數個有機材料層,此些有機材料層全部係沈積於一基板上,以形成具有個別可供能像素之一矩陣顯示面板。OLED一般係置於兩個玻璃面板之間,且玻璃面板之邊緣係密封以封裝OLED於其中。 Organic vaporizers are devices used to produce organic light-emitting diodes (OLEDs). OLEDs are a special form of light-emitting diodes. In OLEDs, the light-emitting layer includes a thin film of a specific organic compound. OLEDs are used to make TV screens, computer screens, mobile phones, and other handheld devices used to display information. OLEDs can also be used for general space lighting. The range of possible colors, brightness, and viewing angles of OLED displays is larger than that of traditional liquid crystal displays (LCDs), because OLED pixels emit light directly without With backlight. Therefore, the energy loss of the OLED display is much smaller than that of the conventional liquid crystal display. In addition, OLEDs can be manufactured on flexible substrates, resulting in more applications. An example of a typical OLED display may include several organic material layers located between two electrodes. All of the organic material layers are deposited on a substrate to form a matrix display panel with individual enabled pixels. The OLED is generally placed between two glass panels, and the edges of the glass panel are sealed to encapsulate the OLED therein.

製造此種顯示裝置係面臨許多挑戰。OLED顯示器或OLED發光應用包括由數個有機材料形成之堆疊,此些有機材料例如是在真空中蒸發。有機材料係經由遮罩(shadow masks)以接續之方式沈積。為了以高效率製造OLED堆疊,共沈積(co-deposition)或共蒸發(co-evaporation)兩個或多個材料成為混合/摻雜層係有需要的,兩個或多個材料舉例為主體(host)及摻雜劑。再者,許多用以蒸發非常靈敏之有機材料的處理條件係必須考慮。 Manufacturing such display devices faces many challenges. OLED displays or OLED lighting applications include stacks formed from several organic materials, such as evaporating in a vacuum. Organic materials are deposited in a sequential manner via shadow masks. In order to manufacture OLED stacks with high efficiency, it is necessary to co-deposition or co-evaporation two or more materials to become a mixed / doped layer. Two or more materials are exemplified as the host ( host) and dopants. Furthermore, many processing conditions used to evaporate very sensitive organic materials must be considered.

為了沈積材料於基板上,材料係加熱直到材料蒸發。再者,舉例來說,為了保持已蒸發材料於一控制溫度或避免已蒸發材料於管中凝結,導引材料至基板的管可進行加熱。當材料蒸發時,材料例如是藉由通過分佈管導引至基板,分佈管具有用於已蒸發材料的出口或噴嘴。在過去數年中,沈積製程的準確性係已經增加,例如是能夠提供越來越小的像素尺寸。然而,遮罩之遮蔽效應(shadowing effects)、已蒸發材料之散佈及類似的情況係讓蒸發製程的準確性和可預測性難以更進一步的增加。 To deposit the material on the substrate, the material is heated until the material evaporates. Furthermore, for example, in order to keep the evaporated material at a controlled temperature or to prevent the evaporated material from condensing in the tube, the tube that guides the material to the substrate may be heated. When the material evaporates, the material is guided to the substrate, for example, by a distribution tube, which has an outlet or nozzle for the evaporated material. Over the past few years, the accuracy of deposition processes has increased, such as being able to provide smaller and smaller pixel sizes. However, the shadowing effects of the mask, the spread of the evaporated material, and the like make it difficult to further increase the accuracy and predictability of the evaporation process.

有鑑於上述,此處所述實施例之一目的係提供一種材料沈積配置、一種真空沈積腔室、一種分佈管、及一種方法,用以沈積材料於一基板上來克服此領域中之至少一些問題。 In view of the foregoing, one object of the embodiments described herein is to provide a material deposition arrangement, a vacuum deposition chamber, a distribution tube, and a method for depositing material on a substrate to overcome at least some problems in this field. .

有鑑於上述,根據獨立申請專利範圍之用以沈積材 料於一基板上之(數種)材料沈積配置、一種沈積腔室、一種分佈管、及一種方法係提供。數個實施例之其他方面、優點、及特徵係藉由附屬申請專利範圍、說明、及所附之圖式更為清楚。 In view of the above, according to the scope of independent patent applications, A material deposition arrangement (several), a deposition chamber, a distribution tube, and a method provided on a substrate are provided. Other aspects, advantages, and features of several embodiments are made clearer by the scope, description, and accompanying drawings of the accompanying patent applications.

根據一實施例,一種用以於一真空腔室中沈積已蒸發材料於一基板上之材料沈積配置係提供,已蒸發材料特別是兩個或多個已蒸發材料。此材料沈積配置包括一第一材料源,包括一第一材料蒸發器,裝配以用於蒸發將沈積於基板上之一第一材料,特別是此兩個或多個材料之一第一材料;一第一分佈管,包括一第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器;及數個第一噴嘴,位於第一分佈管殼體中,其中此些第一噴嘴之一或多個噴嘴包括一開孔長度及一開孔尺寸,其中此些第一噴嘴之此一或多個噴嘴之長度對尺寸比係等同於或大於2:1。 此材料沈積配置更包括一第二材料源,包括一第二材料蒸發器,裝配以用於蒸發將沈積於基板上之一第二材料,特別是此兩個或多個材料之一第二材料;一第二分佈管,包括一第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中。此些第一噴嘴之一第一噴嘴與 此些第二噴嘴之一第二噴嘴之間的一距離係等同於或少於30mm。 According to an embodiment, a material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is provided. The evaporated material is, in particular, two or more evaporated materials. The material deposition configuration includes a first material source, including a first material evaporator, configured to evaporate a first material to be deposited on a substrate, particularly one of the two or more materials; A first distribution pipe includes a first distribution pipe housing, wherein the first distribution pipe system is in fluid communication with the first material evaporator; and a plurality of first nozzles are located in the first distribution pipe housing. One or more nozzles of a nozzle include an opening length and an opening size, wherein a length to size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2: 1. The material deposition configuration further includes a second material source, including a second material evaporator, configured to evaporate a second material to be deposited on the substrate, particularly one of the two or more materials. A second distribution pipe including a second distribution pipe housing, wherein the second distribution pipe is in fluid communication with the second material evaporator; and a plurality of second nozzles are located in the second distribution pipe housing. One of these first nozzles One of these second nozzles has a distance between the second nozzles equal to or less than 30 mm.

根據另一實施例,一種用以於一真空腔室中沈積已蒸發材料於一基板上之材料沈積配置係提供,已蒸發材料特別是兩個或多個已蒸發材料。此材料沈積配置包括一第一材料源,包括一第一材料蒸發器,裝配以用於蒸發將沈積於基板上之一第一材料,特別是此兩個或多個材料之一第一材料;一第一分佈管,包括一第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器;以及數個第一噴嘴,位於第一分佈管殼體中,其中此些第一噴嘴之一或多個噴嘴包括一開孔長度及一開孔尺寸且係裝配以提供一第一分佈方向,其中此些第一噴嘴之此一或多個噴嘴之長度對尺寸比係等同於或大於2:1。此材料沈積配置更包括一第二材料源,包括一第二材料蒸發器,裝配以用於蒸發將沈積於基板上之一第二材料,特別是此兩個或多個材料之一第二材料;一第二分佈管,包括一第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中,其中此些第二噴嘴之一或多個噴嘴係裝配以提供一第二分佈方向。此些第一噴嘴的此一或多個噴嘴的第一分佈方向與此些第二噴嘴的此一或多個噴嘴之第二分佈方向係彼此平行排列,或係從平行排列偏差高達5°排列。 According to another embodiment, a material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is provided. The evaporated material is, in particular, two or more evaporated materials. The material deposition configuration includes a first material source, including a first material evaporator, configured to evaporate a first material to be deposited on a substrate, particularly one of the two or more materials; A first distribution pipe includes a first distribution pipe housing, wherein the first distribution pipe system is in fluid communication with the first material evaporator; and a plurality of first nozzles are located in the first distribution pipe housing. One or more nozzles include an opening length and an opening size and are assembled to provide a first distribution direction, wherein the length to size ratio of the one or more nozzles of the first nozzles is equivalent to Or greater than 2: 1. The material deposition configuration further includes a second material source, including a second material evaporator, configured to evaporate a second material to be deposited on the substrate, particularly one of the two or more materials. A second distribution pipe, including a second distribution pipe housing, wherein the second distribution pipe system is in fluid communication with the second material evaporator; and a plurality of second nozzles, which are located in the second distribution pipe housing, among which One or more of the second nozzles are assembled to provide a second distribution direction. The first distribution direction of the one or more nozzles of the first nozzles and the second distribution direction of the one or more nozzles of the second nozzles are aligned parallel to each other, or aligned from a parallel arrangement with a deviation of up to 5 ° .

根據再另一實施例,一種用以於一真空腔室中沈積已蒸發材料於一基板上之分佈管係提供。此分佈管包括一分佈管 殼體;及一噴嘴,位於分佈管殼體中,其中噴嘴包括一開孔長度及一開孔尺寸。噴嘴之長度對尺寸比係等同於或大於2:1,以及噴嘴包括一材料,材料對一已蒸發有機材料係為化學惰性。 According to yet another embodiment, a distribution pipe system for depositing evaporated material on a substrate in a vacuum chamber is provided. The distribution tube includes a distribution tube A casing; and a nozzle located in the distribution pipe casing, wherein the nozzle includes an opening length and an opening size. The nozzle length to size ratio is equal to or greater than 2: 1, and the nozzle includes a material that is chemically inert to an evaporated organic material.

根據其他實施例,提出一種用以於一真空腔室中沈積已蒸發材料於一基板上之材料沈積配置係提供,已蒸發材料特別是兩個或多個已蒸發材料。此材料沈積配置包括一第一材料源,包括一第一材料蒸發器,裝配以用於蒸發將沈積於基板上之一第一材料,特別是此兩個或多個材料之一第一材料;以及為根據此處所述之材料沈積配置的一第一分佈管之材料沈積配置之分佈管,其中第一分佈管係流體連通於第一材料蒸發器。材料沈積配置更包括一第二材料源,包括一第二材料蒸發器,裝配以用於蒸發將沈積於基板上的一第二材料,特別是此兩個或多個材料之一第二材料;以及一第二分佈管,包括一分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器;以及數個第二噴嘴,位於第二分佈管殼體中。第一分佈管之噴嘴與第二分佈管之此些第二噴嘴之一第二噴嘴之間的一距離係等同於或少於30mm。第一分佈管之噴嘴係額外地或選擇性裝配以提供一第一分佈方向且第二分佈管之此些第二噴嘴之一第二噴嘴係裝配以提供一第二分佈方向,其中第一分佈方向與第二分佈方向係彼此平行排列或係從平行排列偏差高達5°排列。 According to other embodiments, a material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is provided. The evaporated material is particularly two or more evaporated materials. The material deposition configuration includes a first material source, including a first material evaporator, configured to evaporate a first material to be deposited on a substrate, particularly one of the two or more materials; And a distribution pipe configured for a material distribution of a first distribution pipe configured according to the material deposition described herein, wherein the first distribution pipe is in fluid communication with the first material evaporator. The material deposition configuration further includes a second material source, including a second material evaporator, configured to evaporate a second material to be deposited on the substrate, particularly one of the two or more materials; And a second distribution pipe comprising a distribution pipe housing, wherein the second distribution pipe system is in fluid communication with the second material evaporator; and a plurality of second nozzles are located in the second distribution pipe housing. A distance between the nozzle of the first distribution pipe and the second nozzle of one of the second nozzles of the second distribution pipe is equal to or less than 30 mm. The nozzles of the first distribution pipe are additionally or selectively assembled to provide a first distribution direction and one of the second nozzles of the second distribution pipe is assembled to provide a second distribution direction, wherein the first distribution The direction and the second distribution direction are arranged parallel to each other or are arranged with a deviation of up to 5 ° from the parallel arrangement.

根據其他實施例,一種真空沈積腔室係提供。真空沈積腔室包括根據此處所述實施例之材料沈積配置。真空沈積腔 室更包括一基板支座,用以在沈積期間支撐基板。材料沈積配置之此些分佈管之至少一者與基板支座之間的距離係少於250mm。 According to other embodiments, a vacuum deposition chamber is provided. The vacuum deposition chamber includes a material deposition configuration according to the embodiments described herein. Vacuum deposition chamber The chamber further includes a substrate support for supporting the substrate during the deposition. The distance between at least one of the distribution tubes of the material deposition configuration and the substrate support is less than 250 mm.

根據其他實施例,一種用以於一真空沈積腔室中沈積一已蒸發材料於一基板上的方法係提供,真空沈積腔室具有一腔室空間。此方法包括利用配置於腔室空間中之一第一材料蒸發器蒸發一第一材料。此方法更包括提供已蒸發之第一材料至一第一分佈管,第一分佈管包括一第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器。提供已蒸發第一材料至第一分佈管一般包括在第一分佈管中提供約10-2-10-1mbar之一壓力。此方法更包括導引已蒸發第一材料通過在第一分佈管殼體中之數個第一噴嘴的一或多個噴嘴。此些第一噴嘴之此一或多個噴嘴包括一開孔長度及一開孔尺寸,其中導引已蒸發第一材料通過此一或多個噴嘴包括導引已蒸發第一材料通過具有等同於或大於2:1之長度對尺寸比的此一或多個噴嘴。此方法更包括朝向在腔室空間中之此基板釋放已蒸發第一材料至腔室容積,其中腔室空間提供約10-5至10-7mbar之一壓力。 According to other embodiments, a method for depositing an evaporated material on a substrate in a vacuum deposition chamber is provided. The vacuum deposition chamber has a chamber space. The method includes using a first material evaporator disposed in a chamber space to evaporate a first material. The method further includes providing the evaporated first material to a first distribution pipe. The first distribution pipe includes a first distribution pipe housing, wherein the first distribution pipe is in fluid communication with the first material evaporator. Providing the evaporated first material to the first distribution pipe generally includes providing a pressure in the first distribution pipe of about 10 -2 -10 -1 mbar. The method further includes directing the evaporated first material through one or more nozzles of a plurality of first nozzles in the first distribution tube housing. The one or more nozzles of the first nozzles include an opening length and an opening size, wherein guiding the evaporated first material through the one or more nozzles includes guiding the evaporated first material through Or one or more nozzles with a length to size ratio greater than 2: 1. The method further includes releasing the evaporated first material toward the volume of the chamber toward the substrate in the chamber space, wherein the chamber space provides a pressure of about 10 -5 to 10 -7 mbar.

數個實施例係針對用於執行所揭露之方法之設備,且設備包括用於執行各所述之方法特徵的設備部件。此些方法特徵可藉由硬體元件、由適合軟體程式化之電腦、由此兩者之任何結合或任何其他方式執行。再者,數個實施例亦針對操作所述之設備的方法。其包括用於執行設備之每一功能的方法特徵。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施 例,並配合所附圖式,作詳細說明如下: Several embodiments are directed to a device for performing the disclosed methods, and the device includes device components for performing each of the described method features. These method features may be implemented by hardware components, by a computer suitable for software programming, by any combination of the two, or by any other means. Furthermore, several embodiments are directed to a method of operating the described device. It includes method features for performing each function of the device. In order to better understand the above and other aspects of the present invention, the following specific implementations are preferred Examples, combined with the attached drawings, will be described in detail as follows:

100‧‧‧材料沈積配置 100‧‧‧Material deposition configuration

100a‧‧‧第一材料源 100a‧‧‧First material source

100b‧‧‧第二材料源 100b‧‧‧Second material source

100c‧‧‧第三材料源 100c‧‧‧Third material source

100d‧‧‧材料源 100d‧‧‧Material source

101、200‧‧‧距離 101, 200‧‧‧ distance

102‧‧‧支座 102‧‧‧ support

102a‧‧‧第一材料蒸發器 102a‧‧‧First material evaporator

102b‧‧‧第二材料蒸發器 102b‧‧‧Second Material Evaporator

102c‧‧‧第三材料蒸發器 102c‧‧‧Third Material Evaporator

104‧‧‧蒸發坩鍋 104‧‧‧Evaporation crucible

106‧‧‧分佈管 106‧‧‧ Distribution tube

106a‧‧‧第一分佈管 106a‧‧‧first distribution tube

106b‧‧‧第二分佈管 106b‧‧‧Second distribution tube

106c‧‧‧第三分佈管 106c‧‧‧Third distribution tube

107、713‧‧‧開孔 107, 713‧‧‧ opening

108‧‧‧延伸牆 108‧‧‧Extended wall

109‧‧‧牆 109‧‧‧wall

110‧‧‧真空腔室 110‧‧‧vacuum chamber

111‧‧‧維護真空腔室 111‧‧‧ Maintenance Vacuum Chamber

112‧‧‧對準單元 112‧‧‧Alignment unit

116‧‧‧分佈管殼體 116‧‧‧Distribution tube housing

121‧‧‧基板 121‧‧‧ substrate

126‧‧‧基板支座 126‧‧‧ substrate support

131‧‧‧遮罩框架 131‧‧‧Mask frame

132‧‧‧遮罩 132‧‧‧Mask

136‧‧‧第一方向 136‧‧‧first direction

201、202、203‧‧‧縱向軸 201, 202, 203‧‧‧ Longitudinal axis

205、207‧‧‧閥 205, 207‧‧‧ valve

206‧‧‧第一噴嘴材料 206‧‧‧First nozzle material

208‧‧‧第二噴嘴材料 208‧‧‧Second nozzle material

210‧‧‧第一分佈方向 210‧‧‧ First distribution direction

211‧‧‧第二分佈方向 211‧‧‧Second distribution direction

212‧‧‧第三分佈方向 212‧‧‧Third distribution direction

300‧‧‧沈積設備 300‧‧‧ Deposition equipment

320‧‧‧線性導件 320‧‧‧ Linear Guide

322、324、326‧‧‧牆 322, 324, 326‧‧‧ wall

352、354、355‧‧‧箭頭 352, 354, 355‧‧‧ arrows

380‧‧‧加熱元件 380‧‧‧Heating element

400‧‧‧流程圖 400‧‧‧flow chart

410、420、430、440‧‧‧方塊 410, 420, 430, 440‧‧‧ blocks

700‧‧‧噴嘴 700‧‧‧ Nozzle

702‧‧‧蒸發器控制殼體 702‧‧‧Evaporator control housing

703‧‧‧凸緣單元 703‧‧‧ flange unit

710‧‧‧內部中空空間 710‧‧‧Hollow interior

712‧‧‧噴嘴 712‧‧‧Nozzle

714‧‧‧開孔長度 714‧‧‧cut length

715‧‧‧加熱單元 715‧‧‧Heating unit

716‧‧‧開孔尺寸 716‧‧‧cut size

717‧‧‧加熱遮蔽件 717‧‧‧Heating shield

722‧‧‧栓 722‧‧‧ suppository

725‧‧‧外部加熱單元 725‧‧‧External heating unit

726‧‧‧中央加熱元件 726‧‧‧central heating element

727‧‧‧遮罩物 727‧‧‧Mask

732‧‧‧蒸汽導管 732‧‧‧Steam duct

800、801‧‧‧曲線 800, 801‧‧‧ curves

802、803‧‧‧已蒸發材料 802, 803‧‧‧‧ evaporated material

804‧‧‧第一接線 804‧‧‧First wiring

805‧‧‧第二接線 805‧‧‧Second wiring

806‧‧‧第三接線 806‧‧‧Third wiring

879‧‧‧絕熱器 879‧‧‧Insulator

A‧‧‧區域 A‧‧‧Area

B、C‧‧‧局部圖 B, C‧‧‧Partial map

為了可詳細地了解數個實施例之上述特徵,簡要摘錄於上之更特有的說明可參照實施例。所附之圖式係有關於數個實施例且說明於下方:第1a至1f圖繪示根據此處所述實施例之材料沈積配置的示意圖及材料沈積配置的部分、更詳細之示意圖;第2a至2c圖繪示根據此處所述實施例之材料沈積配置之分佈管的示意圖;第3a圖繪示根據此處所述實施例之分佈管與噴嘴之材料分佈的示意圖;第3b圖繪示已知系統之分佈管的材料分佈的示意圖;第3c圖繪示根據此處所述實施例與已知系統之分佈管之材料分佈的比較圖;第4a圖繪示根據此處所述實施例之材料沈積配置之示意圖;第4b圖繪示已知沈積系統之示意圖;第5a及5b圖繪示根據此處所述實施例之材料沈積配置之側視與上視圖;第6a及6b圖根據此處所述實施例之材料沈積配置之側視圖及根據此處所述實施例之材料沈積配置之分佈管及噴嘴之更詳細示意圖;第7a至7d圖繪示根據此處所述實施例之使用於分佈管與材料沈積配置中之噴嘴的示意圖; 第8a至8c圖繪示根據此處所述實施例之材料沈積配置與分佈管之示意圖;第9a及9b圖繪示根據此處所述實施例之分佈管之示意圖;第10圖繪示根據此處所述實施例之真空沈積腔室之示意圖;以及第11圖繪示根據此處所述實施例之用以沈積材料於基板上之方法的流程圖。 In order to understand the above-mentioned features of several embodiments in detail, the more specific descriptions briefly summarized above can refer to the embodiments. The attached drawings are related to several embodiments and are described below: Figures 1a to 1f show schematic diagrams of material deposition configurations and some more detailed schematic diagrams of material deposition configurations according to the embodiments described herein; Figures 2a to 2c are schematic diagrams of the distribution tubes of the material deposition configuration according to the embodiment described herein; Figure 3a is a schematic diagram of the materials distribution of the distribution tube and nozzle according to the embodiment described herein; Figure 3b is A schematic diagram showing the material distribution of a distribution pipe of a known system; Figure 3c shows a comparison diagram of the material distribution of a distribution pipe according to an embodiment described herein with a known system; Figure 4a shows an implementation according to the description herein Schematic illustration of a material deposition configuration for example; Figure 4b illustrates a schematic view of a known deposition system; Figures 5a and 5b illustrate side and top views of a material deposition configuration according to the embodiments described herein; Figures 6a and 6b A side view of the material deposition configuration according to the embodiment described here and a more detailed schematic of the distribution pipes and nozzles of the material deposition configuration according to the embodiment described here; Figures 7a to 7d show examples according to the embodiment described herein For distribution A schematic configuration of a nozzle with a material deposition; Figures 8a to 8c show schematics of material deposition arrangements and distribution tubes according to the embodiments described herein; Figures 9a and 9b show schematics of distribution tubes according to the embodiments described herein; Figure 10 shows A schematic view of the vacuum deposition chamber of the embodiment described herein; and FIG. 11 shows a flowchart of a method for depositing a material on a substrate according to the embodiment described herein.

詳細的參照將以各種實施例來達成,實施例的一或多個例子係繪示在圖式中。在下方圖式之說明中,相同參考編號係意指相同元件。一般來說,僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明的方式提供且不意味為一限制。再者,所說明或敘述而做為一實施例之部分之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。 Detailed reference will be made in various embodiments, one or more examples of which are illustrated in the drawings. In the description of the drawings below, the same reference numerals refer to the same elements. Generally, only the differences between the individual embodiments are described. The examples are provided by way of illustration and are not meant to be limiting. Furthermore, the features described or described as part of one embodiment can be used in or combined with other embodiments to obtain still other embodiments. This means that this description includes such adjustments and changes.

如此處所使用,名稱「流體連通(fluid communication)」可理解為流體連通的兩個元件可經由一連接件交換流體,以讓流體於此兩個元件之間流動。於一例子中,為流體連通之此些元件可包括中空結構,流體可流動通過中空結構。根據一些實施例,為流體連通之此些元件的至少一者可為類管元件。 As used herein, the term "fluid communication" can be understood as meaning that two elements in fluid communication can exchange fluid via a connector to allow fluid to flow between the two elements. In one example, such elements that are in fluid communication may include a hollow structure, and fluid may flow through the hollow structure. According to some embodiments, at least one of such elements in fluid communication may be a tube-like element.

再者,在下方說明中,一材料源可理解為提供將沈 積於一基板上之一源。特別是,材料源可裝配以用於在真空腔室中提供將沈積於一基板上之材料,真空腔室例如是真空沈積腔室或設備。根據一些實施例,材料源可藉由裝配以蒸發將沈積之材料來提供將沈積於基板上之材料。舉例來說,材料源可包括蒸發器或坩鍋,蒸發器或坩鍋蒸發將沈積於基板上之材料,且特別是於一方向中釋放已蒸發材料,此方向係朝向基板或進入材料源之分佈管中。於一些實施例中,蒸發器可流體連通於分佈管,以舉例為用以分佈已蒸發材料。 Furthermore, in the description below, a source of material can be understood as providing A source integrated on a substrate. In particular, the material source may be assembled for providing a material to be deposited on a substrate in a vacuum chamber, such as a vacuum deposition chamber or equipment. According to some embodiments, the material source may provide material to be deposited on a substrate by being assembled to evaporate the material to be deposited. For example, the source of material may include an evaporator or crucible. The evaporator or crucible evaporates the material to be deposited on the substrate, and in particular releases the evaporated material in a direction that is toward the substrate or into the material source. In the distribution tube. In some embodiments, the evaporator may be in fluid communication with the distribution tube, for example to distribute the evaporated material.

根據此處所述一些實施例,分佈管可理解為用以導引及分佈已蒸發材料之一管。特別是,分佈管可從蒸發器導引已蒸發材料至分佈管中之出口或開孔。線性分佈管可理解為於第一,特別是縱向方向中延伸之一管。於一些實施例中,線性分佈管包括具有圓柱形狀之管,且其中圓柱可具有圓形底部形狀或任何其他適合的底部形狀。 According to some embodiments described herein, the distribution tube may be understood as a tube for guiding and distributing the evaporated material. In particular, the distribution pipe can direct the evaporated material from the evaporator to an outlet or opening in the distribution pipe. A linearly distributed tube can be understood as a tube extending in the first, especially in the longitudinal direction. In some embodiments, the linear distribution tube includes a tube having a cylindrical shape, and the column may have a circular bottom shape or any other suitable bottom shape.

此處所指的噴嘴可理解為用以導引一流體的一裝置,特別是用以控制一流體之方向或特性(例如是從噴嘴出現之流體之流速、速度、形狀、及/或壓力)。根據此處所述一些實施例,噴嘴可為用以導引或指引蒸汽之一裝置,蒸汽例如是將沈積於基板上之已蒸發材料的蒸汽。噴嘴可具有用以接收一流體之入口、用以導引流體通過噴嘴之開孔(舉例為鑽孔(bore)或通道)、及用以釋放流體之出口。一般來說,噴嘴之開孔或通道可包括定義之幾何形狀,用以讓流動通過噴嘴之流體達成所需之方向或特 性。根據一些實施,噴嘴可為分佈管之部分或可連接於提供已蒸發材料之分佈管且可從分佈管接收已蒸發材料。 The nozzle referred to herein can be understood as a device for guiding a fluid, in particular for controlling the direction or characteristics of a fluid (for example, the flow rate, velocity, shape, and / or pressure of the fluid emerging from the nozzle). According to some embodiments described herein, the nozzle may be a device for guiding or directing steam, such as steam of evaporated material to be deposited on a substrate. The nozzle may have an inlet for receiving a fluid, an opening (such as a bore or passage) for guiding the fluid through the nozzle, and an outlet for releasing the fluid. Generally speaking, the openings or channels of the nozzle may include a defined geometry to allow the fluid flowing through the nozzle to achieve the desired direction or characteristic. Sex. According to some implementations, the nozzle may be part of a distribution pipe or may be connected to a distribution pipe providing evaporated material and may receive evaporated material from the distribution pipe.

根據此處所述實施例,用以於真空腔室內沈積已蒸發材料於基板上之材料沈積配置係提供。根源一些實施例,材料沈積配置可裝配以用於在真空腔室中沈積二或多個已蒸發材料於基板上。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發器,第一材料蒸發器裝配以用以蒸發將沈積於基板上之第一材料。根據一些實施例,第一材料可為來自將沈積於基板上之此二或多個材料的第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器,其中第一材料源更包括位在第一分佈管殼體中的數個第一噴嘴。一般來說,此些第一噴嘴之一或多個噴嘴包括開孔長度及開孔尺寸,其中此些第一噴嘴之此一或多個噴嘴的長度對尺寸比係等同於或大於2:1。材料沈積配置包括第二材料源,第二材料源包括第二材料蒸發器,第二材料蒸發器裝配以用以蒸發將沈積於基板上之第二材料。根據一些實施例,第二材料可為來自將沈積於基板上之此二或多個材料的第二材料。第二材料源更包括第二分佈管,第二分佈管包括第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器。第二材料源更包括位在第二分佈管殼體中的數個第二噴嘴。根據此處所述實施例,此些第一噴嘴之一第一噴嘴與此些第二噴嘴之一第二噴嘴之間的距離係等同於或少於30mm。根據一些實施例,第一材料和第二材料 可為相同的材料,或可選擇性為不同的材料。 According to the embodiments described herein, a material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is provided. For some embodiments, the material deposition configuration may be configured for depositing two or more evaporated materials on a substrate in a vacuum chamber. The material deposition configuration includes a first material source, the first material source includes a first material evaporator, and the first material evaporator is configured to evaporate the first material to be deposited on the substrate. According to some embodiments, the first material may be a first material from the two or more materials to be deposited on the substrate. The first material source further includes a first distribution tube, and the first distribution tube includes a first distribution tube housing. The first distribution tube system is in fluid communication with the first material evaporator, and the first material source further includes a first distribution tube. Several first nozzles in a tube housing. Generally, one or more of the first nozzles includes an opening length and an opening size, wherein the length to size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2: 1. . The material deposition configuration includes a second material source, the second material source includes a second material evaporator, and the second material evaporator is configured to evaporate the second material to be deposited on the substrate. According to some embodiments, the second material may be a second material from the two or more materials to be deposited on the substrate. The second material source further includes a second distribution pipe, and the second distribution pipe includes a second distribution pipe housing, wherein the second distribution pipe system is in fluid communication with the second material evaporator. The second material source further includes a plurality of second nozzles located in the second distribution tube housing. According to the embodiment described herein, the distance between the first nozzle of one of the first nozzles and the second nozzle of one of the second nozzles is equal to or less than 30 mm. According to some embodiments, the first material and the second material It may be the same material, or it may alternatively be a different material.

第1a圖繪示根據此處所述實施例之材料沈積配置100之側視圖。如第1a圖中所示之材料沈積配置的實施例可包括具有第一材料蒸發器102a之第一材料源、具有第二材料蒸發器102b之第二材料源、及具有第三材料蒸發器102c之第三材料源。 於一實施例中,第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c之各者可提供不同的材料。於另一實施例中,各材料蒸發器可提供相同的材料,或一部分之材料蒸發器可提供相同的材料,而另一部分的材料蒸發器提供不同的材料。根據一些實施例,第一材料蒸發器102a、第二材料蒸發器102b及第三材料蒸發器102c可為坩鍋,裝配以用以蒸發將沈積於基板上之材料。第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c係分別流體連通於第一分佈管106a、第二分佈管106b、及第三分佈管106c。由此些材料蒸發器之一者所蒸發之材料可從材料蒸發器釋放且流入各自的分佈管中。 FIG. 1a illustrates a side view of a material deposition arrangement 100 according to the embodiments described herein. An embodiment of the material deposition configuration as shown in Figure 1a may include a first material source having a first material evaporator 102a, a second material source having a second material evaporator 102b, and a third material evaporator 102c The third source of material. In one embodiment, each of the first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c may provide different materials. In another embodiment, each material evaporator may provide the same material, or a part of the material evaporator may provide the same material, and another part of the material evaporator may provide a different material. According to some embodiments, the first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c may be crucibles, configured to evaporate the material to be deposited on the substrate. The first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c are in fluid communication with the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c, respectively. The material evaporated by one of these material evaporators can be released from the material evaporator and flow into the respective distribution pipes.

如第1圖中可見,第一分佈管106a、第二分佈管106b、及第三分佈管106c之各者包括分佈管殼體,分佈管殼體包括數個噴嘴712。藉由此些噴嘴,已蒸發材料係釋放且導引至將塗佈之基板(未繪示)。根據一些實施例,噴嘴712可為分佈管之一組合部分,例如是形成於分佈管殼體中的一開孔、或可藉由連接於分佈管殼體之噴嘴提供,用以執行已定義之製程,舉例為導引已蒸發材料朝向將塗佈之基板。於一例子中,噴嘴可藉由鎖 固、插置(plugging)、或微縮(shrinking)製程連接於分佈管。於一實施例中,噴嘴可為可交換地連接於材料沈積配置之分佈管。 As can be seen in FIG. 1, each of the first distribution pipe 106 a, the second distribution pipe 106 b, and the third distribution pipe 106 c includes a distribution pipe housing, and the distribution pipe housing includes a plurality of nozzles 712. Through these nozzles, the evaporated material is released and guided to a substrate (not shown) to be coated. According to some embodiments, the nozzle 712 may be a combined part of the distribution pipe, such as an opening formed in the distribution pipe housing, or may be provided by a nozzle connected to the distribution pipe housing to perform a defined The process, for example, directs the evaporated material toward the substrate to be coated. In one example, the nozzle can be locked by Fixing, plugging, or shrinking processes are connected to the distribution tube. In one embodiment, the nozzle may be a distribution tube that is exchangeably connected to the material deposition configuration.

第1b圖繪示如第1a圖中所示之第三分佈管106c之區域A的放大圖。如第1b圖中所示之局部圖係繪示第三分佈管106c及第三分佈管106c之此些噴嘴的一個噴嘴712。噴嘴712係提供開孔713、或通道,已蒸發材料可通過開孔713或通道。 噴嘴712之開孔713係提供開孔長度714,如第1b圖中所示。根據一些實施例,開孔長度714可沿著噴嘴之縱向或長度軸量測,特別是在對應於離開噴嘴之平均流體方向的一方向中。於一實施例中,噴嘴之開孔長度714可實質上垂直於分佈管的縱向(或線性)方向。 FIG. 1b shows an enlarged view of the area A of the third distribution pipe 106c shown in FIG. 1a. The partial diagram shown in FIG. 1b shows a nozzle 712 of the third distribution pipe 106c and the third distribution pipe 106c. The nozzle 712 is provided with an opening 713, or channel, through which the evaporated material can pass. The opening 713 of the nozzle 712 provides an opening length 714, as shown in FIG. 1b. According to some embodiments, the opening length 714 may be measured along the longitudinal or length axis of the nozzle, particularly in a direction corresponding to the average fluid direction away from the nozzle. In an embodiment, the opening length 714 of the nozzle may be substantially perpendicular to the longitudinal (or linear) direction of the distribution pipe.

名稱「實質上垂直(substantially perpendicular)」可理解為包括從絕對(strict)垂直配置偏差高達15°。根據一些實施例,在下述說明中以「實質上(substantially)」表示之其他名稱可包括從已指示之角度配置偏差高達15°,或從一尺寸偏差約15%。 The name "substantially perpendicular" can be understood to include deviations up to 15 ° from an absolute vertical arrangement. According to some embodiments, other names expressed as "substantially" in the following description may include a deviation of up to 15 ° from the indicated angle, or a deviation of about 15% from a dimension.

第1c圖繪示材料沈積配置100之前視圖,此前視圖可對應於如第1a圖中所示的材料沈積配置,但旋轉約90°。第一材料蒸發器102a、第二材料蒸發器102b、及第三材料蒸發器102c係分別流體連通於第一分佈管106a、第二分佈管106b、及第三分佈管及106c。噴嘴712之開孔於前視圖中係為可見。不同之第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712係彼此相距距離200。根據此處所述實施例,此些噴嘴之間的距 離可代表性少於50mm,更代表性少於30mm,且甚至更代表性少於25mm。 FIG. 1c shows a front view of the material deposition configuration 100. The previous view may correspond to the material deposition configuration shown in FIG. 1a, but is rotated by about 90 °. The first material evaporator 102a, the second material evaporator 102b, and the third material evaporator 102c are in fluid communication with the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c, respectively. The opening of the nozzle 712 is visible in the front view. The nozzles 712 of the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c are separated by a distance of 200 from each other. According to the embodiment described here, the distance between these nozzles Li can be less than 50 mm, more representative is less than 30 mm, and even more representative is less than 25 mm.

根據一些實施例,不同之第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712之間的距離係從各自之噴嘴的開孔的中心點量測。於一例子中,噴嘴之開孔的中心點可定義為開孔的幾何中心點。在開孔為圓形之情況中,圓形之中心點係與在邊緣上的點等距之點。舉例來說,如果噴嘴之開孔具有對稱形狀,開孔的中心點可說明成在對稱運動中處於不變的點。舉例來說,正方形、矩形、菱形、或平行四邊形之中心點係位於對角線相交處,中心點為旋轉對稱之固定點。類似地,橢圓形的中心點係位於軸相交處。根據一些實施例,中心點可理解為形狀之重心。 According to some embodiments, the distances between the nozzles 712 of the different first distribution pipes 106a, second distribution pipes 106b, and third distribution pipes 106c are measured from the center points of the openings of the respective nozzles. In one example, the center point of the opening of the nozzle can be defined as the geometric center point of the opening. In the case where the opening is circular, the center point of the circle is a point equidistant from the point on the edge. For example, if the opening of the nozzle has a symmetrical shape, the center point of the opening can be described as a point that is invariant in the symmetrical movement. For example, the center point of a square, rectangle, rhombus, or parallelogram is located at the intersection of the diagonals, and the center point is a fixed point of rotation symmetry. Similarly, the center point of the ellipse is at the intersection of the axes. According to some embodiments, the center point may be understood as the center of gravity of the shape.

於一些實施例中,在分佈管之此些噴嘴之間的距離200可為實質上水平距離。舉例來說,第一分佈管106a、第二分佈管106b、及第三分佈管106c可在實質上垂直方向中延伸。此些噴嘴可具有蒸發方向,也就是實質上水平之噴嘴釋放已蒸發材料之方向。根據一些實施例,在不同分佈管之此些噴嘴之間的實質上水平距離可理解為包括從絕對水平配置偏差約15°。 In some embodiments, the distance 200 between such nozzles of the distribution tube may be a substantially horizontal distance. For example, the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c may extend in a substantially vertical direction. Such nozzles may have an evaporation direction, that is, a direction in which a substantially horizontal nozzle releases evaporated material. According to some embodiments, a substantially horizontal distance between such nozzles of different distribution tubes can be understood to include a deviation of about 15 ° from an absolute horizontal configuration.

根據一些實施例,此些噴嘴之間的距離可說明成在不同分佈管彼此之間的距離,舉例為從分佈管之縱向軸進行量測。於一實施例中,分佈管彼此相距距離200。 According to some embodiments, the distance between the nozzles may be described as the distance between different distribution pipes, for example, measurement is performed from the longitudinal axis of the distribution pipes. In one embodiment, the distribution pipes are separated by a distance of 200 from each other.

第1d至1f圖繪示在第1c圖之前視圖中的局部圖B 之實施例的示意圖。在第1d至1f圖中,噴嘴712之開孔尺寸716係標註。噴嘴之開孔尺寸可決定於噴嘴之形狀。於一實施例中,開孔尺寸可理解為開孔之一維度,開孔之此維度不是開孔長度。 根據一些實施例,開孔尺寸可為開孔之剖面的最小維度,特別是在噴嘴之出口的剖面的最小維度(噴嘴之出口係位於已蒸發材料離開噴嘴處)。 Figures 1d to 1f show a partial view B in the view before Figure 1c Schematic illustration of the embodiment. In the figures 1d to 1f, the opening size 716 of the nozzle 712 is marked. The opening size of the nozzle can be determined by the shape of the nozzle. In an embodiment, the size of the opening can be understood as a dimension of the opening, and this dimension of the opening is not the length of the opening. According to some embodiments, the size of the opening may be the smallest dimension of the cross-section of the opening, especially the smallest dimension of the cross-section of the nozzle exit (the nozzle exit is located where the evaporated material leaves the nozzle).

第1d圖繪示噴嘴開孔及開孔尺寸716之一例子的示意圖,其中開孔尺寸係對應於剖面,特別是開孔直徑。第1e圖繪示一例子,其中噴嘴開孔具有類橢圓形之形狀且開孔之尺寸係由開孔之剖面的最小維度定義。第1f圖繪示一例子,其中噴嘴開孔具有延長圓形之形狀,其中開孔的尺寸係由開孔之剖面的最小維度定義。具有通常知識者將了解第1a至1f圖所示之實施例僅為例子,且不限定應用為噴嘴開孔的尺寸、形狀、及長度之所示例子、或不限定應用為分佈管與材料源之配置之所示例子,如將詳細地見於下文。 Fig. 1d is a schematic diagram showing an example of the nozzle opening and the opening size 716. The opening size corresponds to the cross section, especially the opening diameter. Figure 1e illustrates an example in which the nozzle opening has an oval-like shape and the size of the opening is defined by the smallest dimension of the cross section of the opening. Figure 1f shows an example in which the nozzle opening has an elongated circular shape, and the size of the opening is defined by the smallest dimension of the cross section of the opening. Those with ordinary knowledge will understand that the embodiments shown in Figures 1a to 1f are only examples, and are not limited to the illustrated examples of the size, shape, and length of the nozzle openings, or are not limited to use as distribution pipes and material sources. An example of the configuration is shown in detail below.

根據此處所述實施例,第一分佈管之各噴嘴可具有2:1或更大之開孔長度對尺寸比,或僅有第一分佈管的部分之噴嘴可具有所述之長度對尺寸比。根據一些實施例,如此所述之材料沈積配置的第二及/或第三分佈管可亦包括一或多個噴嘴,具有2:1或更大之開孔長度對尺寸比。 According to the embodiments described herein, each nozzle of the first distribution pipe may have an opening length to size ratio of 2: 1 or more, or the nozzles of only a portion of the first distribution pipe may have the length to size described. ratio. According to some embodiments, the second and / or third distribution tube of the material deposition configuration described above may also include one or more nozzles having an opening length to size ratio of 2: 1 or greater.

根據可與此處所述其他實施例結合之一些實施例,分佈管可具有實質上三角形剖面。第2a圖繪示分佈管106之剖面 的一例子的示意圖。分佈管106具有牆322、326、及324,牆322、326、及324係環繞內部中空空間710。牆322係提供於噴嘴712所設置的材料源之出口側。分佈管之剖面可說明成本質上三角形,也就是分佈管之主要區域係對應於三角形之一部分及/或分佈管之剖面可為具有圓角(rounded corners)及/或切角(cut-off corners)之三角形。如第2a圖中所示,在出口側之三角形的角落係舉例為切角。 According to some embodiments that may be combined with other embodiments described herein, the distribution tube may have a substantially triangular cross-section. Figure 2a shows a section of the distribution pipe 106 Schematic of an example. The distribution pipe 106 has walls 322, 326, and 324, and the walls 322, 326, and 324 surround the inner hollow space 710. The wall 322 is provided on the exit side of the material source where the nozzle 712 is provided. The profile of the distribution pipe can be described as a cost-effective triangle, that is, the main area of the distribution pipe corresponds to a part of the triangle and / or the profile of the distribution pipe can have rounded corners and / or cut-off corners ) Of the triangle. As shown in Fig. 2a, the corners of the triangle on the exit side are exemplified by chamfered corners.

分佈管之出口側的寬度,舉例為如第2a圖中所示之剖面中的牆322的維度係由箭頭352標註。再者,分佈管106之剖面的其他維度係由箭頭354和355所標註。根據此處所述實施例,分佈管之出口側的寬度係剖面之最大維度之30%或更少,舉例為由箭頭354及355所標註之較大維度的30%或更少。有鑑於分佈管的維度及形狀,相鄰分佈管106之噴嘴712可提供在較小的距離。此較小的距離係改善彼此相鄰進行蒸發之有機材料的混合。 The width of the outlet side of the distribution pipe, for example, is indicated by the arrow 352 as the dimension of the wall 322 in the section shown in Figure 2a. Further, other dimensions of the cross section of the distribution pipe 106 are indicated by arrows 354 and 355. According to the embodiment described here, the width of the outlet side of the distribution pipe is 30% or less of the largest dimension of the section, for example, 30% or less of the larger dimension marked by arrows 354 and 355. In view of the dimensions and shape of the distribution pipes, the nozzles 712 of the adjacent distribution pipes 106 can be provided at a smaller distance. This smaller distance improves the mixing of organic materials that are evaporated next to each other.

第2b圖繪示兩個分佈管係彼此相鄰之一實施例之示意圖。因此,具有如第2b圖中所示之兩個分佈管的材料沈積配置可蒸發彼此相鄰之兩個有機材料。此種材料沈積配置可亦意指材料沈積陣列。如第2b圖中所示,分佈管106之剖面的形狀係讓相鄰分佈管的噴嘴靠近彼此擺置。根據可與此處所述其他實施例結合之一些實施例,第一分佈管之第一噴嘴和第二分佈管之第二噴嘴可具有30mm或以下之距離,例如是從5mm至25mm。 更特別是,第一出口或噴嘴至第二出口或噴嘴之距離可為10mm或以下。 FIG. 2b is a schematic diagram of an embodiment in which two distribution pipe systems are adjacent to each other. Therefore, a material deposition arrangement having two distribution tubes as shown in Fig. 2b can evaporate two organic materials adjacent to each other. Such a material deposition configuration may also mean a material deposition array. As shown in Figure 2b, the cross-sectional shape of the distribution pipe 106 is such that the nozzles of adjacent distribution pipes are placed close to each other. According to some embodiments that can be combined with other embodiments described herein, the first nozzle of the first distribution pipe and the second nozzle of the second distribution pipe may have a distance of 30 mm or less, such as from 5 mm to 25 mm. More specifically, the distance from the first outlet or nozzle to the second outlet or nozzle may be 10 mm or less.

根據此處所述一些實施例,在第一分佈管之第一噴嘴和第二分佈管之第二噴嘴之間的距離可量測為各自之噴嘴的縱向軸之間的最小距離。於一例子中,在各自之噴嘴的縱向軸之間的最小距離係在噴嘴的出口(也就是已蒸發材料離開噴嘴之位置)。第2c圖繪示如第2b圖中所示之配置的局部圖C之示意圖。 於第2c圖中放大的局部圖C係繪示兩個第一分佈管106a及第二分佈管106b之一例子,其中在此些噴嘴之間的距離200係在第一分佈管106a之第一噴嘴的縱向軸201和第二分佈管106b之第二噴嘴的縱向軸202之間的各自噴嘴之出口量測。根據一些實施例,此處所指之噴嘴之縱向軸係沿著噴嘴之長度方向延伸。 According to some embodiments described herein, the distance between the first nozzle of the first distribution pipe and the second nozzle of the second distribution pipe may be measured as the minimum distance between the longitudinal axes of the respective nozzles. In one example, the minimum distance between the longitudinal axes of the respective nozzles is at the exit of the nozzle (ie, where the evaporated material leaves the nozzle). Figure 2c shows a schematic diagram of a partial view C of the configuration shown in Figure 2b. The enlarged partial view C in FIG. 2c shows an example of two first distribution pipes 106a and the second distribution pipe 106b. The distance 200 between these nozzles is the first of the first distribution pipes 106a. The outlets of the respective nozzles are measured between the longitudinal axis 201 of the nozzle and the longitudinal axis 202 of the second nozzle of the second distribution pipe 106b. According to some embodiments, the longitudinal axis of the nozzle referred to here extends along the length of the nozzle.

根據此處所述實施例,如此處所述之材料沈積配置可使用於高準確性製程中,高準確性製程例如是有機發光二極體(OLED)生產製程。第3a及4a圖係繪示根據此處所述實施例之材料沈積配置之功效的示意圖。第3b及4b圖係繪示已知材料沈積配置之比較例子的功效的示意圖。於第3a圖中,已蒸發材料從根據此處所述實施例之材料沈積配置釋放之分佈的測試資料係繪示出來。曲線800係顯示已蒸發材料從具有2:1或較高之長度對尺寸比之噴嘴釋放之實驗結果。第3a圖之例子繪示出已蒸發材料之分佈係大約仿造cos6形狀。如第3b圖中所示之與已知材料沈積配置之比較繪示出傳統材料沈積配置之分佈係對應於由曲線 801所示之cos1形狀。曲線800與已知系統之曲線801之間的差異係實質上為已蒸發材料之羽狀物(plume)的寬度及在羽狀物中之已蒸發材料之集中分佈,曲線800由根據此處所述實施例之材料沈積配置產生。舉例來說,如果遮罩係使用於沈積材料於基板上,例如是在OLED生產系統中,遮罩可為具有像素開孔之像素遮罩,像素開孔係具有約50μm x 50μm或甚至以下之尺寸,例如是像素開孔具有約30μm或以下、或約20μm之剖面的維度(舉例為剖面之最小尺寸)。於一例子中,像素遮罩可具有約40μm之厚度。考慮遮罩之厚度和像素開孔之尺寸,遮蔽效應可能出現,在遮罩中之像素開孔之牆係遮蔽像素開孔。根據此處所述實施例之材料沈積配置及/或分佈管及/或噴嘴可有助於減少遮蔽效應。 According to the embodiments described herein, the material deposition configuration described herein can be used in a high-accuracy process, such as an organic light-emitting diode (OLED) production process. Figures 3a and 4a are schematic diagrams illustrating the efficacy of a material deposition arrangement according to the embodiments described herein. Figures 3b and 4b are schematic diagrams showing the efficacy of a comparative example of known material deposition configurations. In Figure 3a, the test data of the distribution of the evaporated material released from the material deposition configuration according to the embodiment described herein is shown. Curve 800 is an experimental result showing the release of evaporated material from a nozzle having a length to size ratio of 2: 1 or higher. The example in Figure 3a shows that the distribution of the evaporated material is approximately mimicking the shape of cos 6 . The comparison with the known material deposition configuration shown in Figure 3b shows that the distribution of the conventional material deposition configuration corresponds to the shape of cos 1 shown by curve 801. The difference between the curve 800 and the curve 801 of the known system is essentially the width of the plume of the evaporated material and the concentrated distribution of the evaporated material in the plume. The material deposition configuration of the embodiment is generated. For example, if the mask is used to deposit materials on a substrate, such as in an OLED production system, the mask may be a pixel mask with pixel openings, and the pixel openings may have a size of about 50 μm x 50 μm or even less. The size is, for example, the dimension of a pixel opening having a cross section of about 30 μm or less, or about 20 μm (for example, the minimum size of the cross section). In one example, the pixel mask may have a thickness of about 40 μm. Considering the thickness of the mask and the size of the pixel openings, a masking effect may occur. The wall of the pixel openings in the mask is to block the pixel openings. Material deposition arrangements and / or distribution tubes and / or nozzles according to embodiments described herein may help reduce shadowing effects.

可藉由使用根據此處所述實施例之材料沈積配置之蒸發來達成的高定向性(directionality)係改善已蒸發材料之使用性,因為更多已蒸發材料實際上係到達基板(及例如為不是基板之上方及下方的區域)。 The high directivity that can be achieved by using the evaporation of the material deposition configuration according to the embodiments described herein is to improve the usability of the evaporated material because more evaporated material actually reaches the substrate (and, for Not the area above and below the substrate).

第3c圖繪示在一遮罩之一像素中的已蒸發材料之分佈且繪示出三條不同之線的示意圖。全部三條線係表示在噴嘴和基板之間的已定義距離中已蒸發材料之分佈。於一例子中,在噴嘴出口(已蒸發材料離開噴嘴之位置)和基板或基板支座之間的距離可為250mm或更少,例如是約200mm,或約150mm。第一接線804係表示已知之材料沈積配置所提供的一遮罩之一像素開孔中的已蒸發材料的分佈。第一接線804之分佈係對應於類似 cos1分佈。利用根據此處所述實施例之材料沈積配置或分佈管,已蒸發材料之分佈可對應於類似cos6分佈,如由第二接線805所示。特別是,第二接線805之斜率陡於第一接線804之斜率。具有通常知識者從第3c圖可見,以cos6分佈係比cos1分佈在遮罩之像素開孔的邊緣有較佳填滿。第三接線806係表示利用根據此處所述實施例之材料沈積配或分佈管之實驗測試結果。第三接線806係實質上仿造具有已蒸發材料之類似cos6分佈的第二接線805。當使用根據此處所述實施例之材料沈積配置或分佈管,遮蔽效應可減少。 FIG. 3c is a schematic diagram showing the distribution of the evaporated material in one pixel of a mask and three different lines. All three lines represent the distribution of evaporated material over a defined distance between the nozzle and the substrate. In one example, the distance between the nozzle outlet (where the evaporated material leaves the nozzle) and the substrate or substrate support may be 250 mm or less, such as about 200 mm, or about 150 mm. The first wiring 804 represents the distribution of evaporated material in one pixel opening of a mask provided by a known material deposition configuration. The distribution of the first wiring 804 corresponds to a similar cos 1 distribution. With the material deposition configuration or distribution tube according to the embodiments described herein, the distribution of the evaporated material may correspond to a similar cos 6 distribution, as shown by the second wiring 805. In particular, the slope of the second wiring 805 is steeper than that of the first wiring 804. Those with ordinary knowledge can see from Figure 3c that the cos 6 distribution is better than the cos 1 distribution on the edge of the pixel opening of the mask. The third connection 806 represents the result of an experimental test using a material deposition pipe or a distribution pipe according to the embodiments described herein. The third connection 806 is substantially a copy of the second connection 805 with a similar cos 6 distribution of the evaporated material. When using a material deposition arrangement or distribution tube according to the embodiments described herein, the shadowing effect can be reduced.

第4a圖繪示根據此處所述實施例之範例性包括第一材料源100a、第二材料源100b、及第三材料源100c之材料沈積配置的示意圖。材料沈積配置可為如此處實施例中所述之材料沈積配置。第4a圖之沈積系統更繪示出將以已蒸發材料塗佈的基板121及用以遮蔽基板121之遮罩132。第4a圖繪示已蒸發材料802如何離開(exits)且脫離(leaves)材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c,特別是材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c之噴嘴。根據此處所述實施例,已蒸發材料802係在離開材料沈積配置之第一材料源100a、第二材料源100b、及第三材料源100c且進入沈積腔室之真空空間時散佈。具有2:1或更大之長度對尺寸比的噴嘴係讓已蒸發材料具有有限制之散佈,有限制之散佈舉例為包含約30°或更少之角度。繪示於第4b圖中之與已知沈積系 統之比較係已蒸發材料803包含約60°之角度。 FIG. 4a is a schematic diagram illustrating an exemplary material deposition configuration including a first material source 100a, a second material source 100b, and a third material source 100c according to the embodiments described herein. The material deposition configuration may be a material deposition configuration as described in the examples herein. The deposition system in FIG. 4a further illustrates the substrate 121 coated with the evaporated material and a mask 132 for shielding the substrate 121. Figure 4a shows how the evaporated material 802 exits and leaves the first material source 100a, the second material source 100b, and the third material source 100c of the material deposition configuration, especially the first material deposition configuration. The nozzles of the material source 100a, the second material source 100b, and the third material source 100c. According to the embodiment described herein, the evaporated material 802 is dispersed when it leaves the first material source 100a, the second material source 100b, and the third material source 100c of the material deposition configuration and enters the vacuum space of the deposition chamber. Nozzles having a length-to-size ratio of 2: 1 or more allow the vaporized material to have a restricted spread, for example a restricted spread including an angle of about 30 ° or less. The known sedimentary system shown in Figure 4b By comparison, the evaporated material 803 contains an angle of about 60 °.

如於第3a、3b、4a、及4b圖中所示之例子可見,根據此處所述實施例之材料沈積配置可提供已蒸發材料之較小的分佈散佈,且提供更精確導引已蒸發材料到達基板,且特別是以高準確性來更精準到達用於塗佈基板之遮罩開孔。 As can be seen in the examples shown in Figures 3a, 3b, 4a, and 4b, the material deposition configuration according to the embodiments described herein can provide a smaller distribution of evaporated material and provide more accurate guidance of the evaporated material. The material reaches the substrate, and in particular, the mask openings for coating the substrate are more accurately reached with high accuracy.

以少於30mm之距離排列分佈管之噴嘴係更提供選擇來混合不同之第一材料源100a、第二材料源100b、及第三材料源100c之不同材料。藉由使用特別形狀之分佈管,例如是如第4a圖中範例性所示之類似三角形之形狀,在材料沈積配置之此些噴嘴之間減少距離可更改善。 The nozzles that arrange the distribution tubes at a distance of less than 30 mm further provide the option to mix different materials of different first material sources 100a, second material sources 100b, and third material sources 100c. By using a specially-shaped distribution tube, such as a triangle-like shape as exemplarily shown in Fig. 4a, reducing the distance between these nozzles of the material deposition arrangement can be more improved.

具有類似cos6分佈之已蒸發材料可提供使用較小之遮罩開孔且改善將於基板上塗佈之較小之結構的準確性,例如是用於OLED產品之像素。 Evaporated materials with a similar cos 6 distribution can provide smaller mask openings and improve the accuracy of smaller structures to be coated on substrates, such as pixels used in OLED products.

根據一些實施例,用以在真空腔室中沈積已蒸發材料於基板上之材料沈積配置係提供。根據一些實施例,材料沈積配置可裝配以用於在真空腔室中沈積兩個或多個已蒸發材料於基板上。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發器,裝配以用於蒸發將沈積於基板上之第一材料。根據一些實施例,第一材料可為將沈積於基板上之兩個或多個材料的第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發器。再者,第一材料源包括位於第一分佈管殼體中之數個第一噴嘴,其 中此些第一噴嘴之一或多個噴嘴包括開孔長度和開孔尺寸,且係裝配以提供第一分佈方向。此些第一噴嘴之此一或多個噴嘴的長度對尺寸比係等同於或大於2:1。材料沈積配置更包括第二材料源,第二材料源包括第二材料蒸發器,裝配以蒸發將沈積於基板上之第二材料。根據一些實施例,第二材料可為將沈積於基板上之兩個或多個材料之第二材料。第二材料源更包括第二分佈管。 第二分佈管包括第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器。第二材料源更包括位於第二分佈管殼體中之數個第二噴嘴,其中一或多個第二噴嘴係裝配以提供第二分佈方向。根據可與此處所述其他實施例結合之此處所述數個實施例,此些第一噴嘴之此一或多個噴嘴之第一分佈方向和此些第二噴嘴之此一或多個噴嘴之第二分佈方向係彼此平行排列,或自平行排列偏差高達5°排列。根據一些實施例,第一材料和第二材料可為相同材料,或可選擇性為不同材料。 According to some embodiments, a material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is provided. According to some embodiments, a material deposition configuration may be assembled for depositing two or more evaporated materials on a substrate in a vacuum chamber. The material deposition configuration includes a first material source, the first material source includes a first material evaporator, and is configured to vaporize the first material to be deposited on the substrate. According to some embodiments, the first material may be a first material of two or more materials to be deposited on a substrate. The first material source further includes a first distribution pipe, and the first distribution pipe includes a first distribution pipe housing, wherein the first distribution pipe system is in fluid communication with the first material evaporator. Furthermore, the first material source includes a plurality of first nozzles located in the first distribution tube housing. One or more of the first nozzles include an opening length and an opening size, and are assembled to provide a first distribution direction. The length to size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2: 1. The material deposition configuration further includes a second material source, and the second material source includes a second material evaporator, which is assembled to evaporate the second material to be deposited on the substrate. According to some embodiments, the second material may be a second material of two or more materials to be deposited on the substrate. The second material source further includes a second distribution tube. The second distribution pipe includes a second distribution pipe housing, wherein the second distribution pipe system is in fluid communication with the second material evaporator. The second material source further includes a plurality of second nozzles located in the second distribution tube housing, wherein one or more second nozzles are assembled to provide a second distribution direction. According to several embodiments described herein that can be combined with other embodiments described herein, the first distribution direction of the one or more nozzles of the first nozzles and the one or more of the second nozzles The second distribution direction of the nozzles is arranged in parallel with each other, or the deviation from the parallel arrangement is as high as 5 °. According to some embodiments, the first material and the second material may be the same material, or may be different materials selectively.

第5a圖繪示一材料沈積配置之示意圖,此材料沈積配置具有實質上平行排列之在第一分佈管殼體中之噴嘴的第一分佈方向和在第二分佈管殼體中之噴嘴之第二分佈方向。範例性繪示於第5a圖中之材料沈積配置係繪示第一材料源100a和第二材料源100b。各第一材料源100a及第二材料源100b分別包括第一材料蒸發器102a及第二材料蒸發器102b。於一例子中,各材料蒸發器可提供不同材料。於另一實施例中,各材料蒸發器可提供相同材料,或部分之材料蒸發器可提供相同材料,而另一部分 之材料蒸發器係提供不同材料。根據此處所述實施例,第一材料源100a包括第一分佈管106a,且第二材料源100b包括第二分佈管106b。第一和第二分佈管各具有分佈管殼體,噴嘴712係配置在分佈管殼體中。特別是,第一分佈管包括數個第一噴嘴且第二分佈管包括數個第二噴嘴,用以從各自的分佈管殼體朝向將塗佈之基板釋放已蒸發材料。 Figure 5a shows a schematic diagram of a material deposition configuration having a first distribution direction of nozzles in a first distribution tube housing and a first distribution direction of nozzles in a second distribution tube housing arranged substantially parallel. Second distribution direction. An exemplary material deposition configuration shown in FIG. 5a shows a first material source 100a and a second material source 100b. Each of the first material source 100a and the second material source 100b includes a first material evaporator 102a and a second material evaporator 102b, respectively. In one example, each material evaporator can provide different materials. In another embodiment, each material evaporator may provide the same material, or a part of the material evaporator may provide the same material, and another part The material evaporator provides different materials. According to the embodiments described herein, the first material source 100a includes a first distribution tube 106a, and the second material source 100b includes a second distribution tube 106b. The first and second distribution pipes each have a distribution pipe housing, and the nozzle 712 is disposed in the distribution pipe housing. In particular, the first distribution tube includes a plurality of first nozzles and the second distribution tube includes a plurality of second nozzles for releasing the evaporated material from the respective distribution tube housings toward the coated substrate.

根據此處所述實施例,第一分佈管及/或第二分佈管之一或多個噴嘴可具有為2:1或更大之噴嘴的長度對尺寸比,例如是2.5:1、3:1、5:1或甚至大於5:1。噴嘴開孔之尺寸和長度可理解成上述有關於第1a至1f圖詳細之說明。於一些實施例中,第一分佈管之一或多個噴嘴係提供第一分佈方向且第二分佈管之一或多個噴嘴係提供第二分佈方向。 According to the embodiment described herein, one or more of the nozzles of the first distribution pipe and / or the second distribution pipe may have a length-to-size ratio of the nozzles of 2: 1 or more, such as 2.5: 1, 3: 1, 5: 1 or even greater than 5: 1. The size and length of the openings of the nozzle can be understood as the detailed description of the figures 1a to 1f described above. In some embodiments, one or more nozzles of the first distribution pipe provide a first distribution direction and one or more nozzles of the second distribution pipe provide a second distribution direction.

根據此處所述實施例,噴嘴之分佈方向可理解為噴嘴之平均分佈方向。於一些實施例中,平均分佈方向可實質上對應於已蒸發材料之羽狀物中之一接線,已蒸發材料之羽狀物係從噴嘴朝向將塗佈之基板釋放,特別是平均分佈方向可實質上對應於沿著已蒸發材料之集中到達在已蒸發材料之羽狀物中之最大者之一接線。根據一些實施例,噴嘴之平均分佈方向可理解為對應至已蒸發材料之羽狀物之幾何中心線,已蒸發材料之羽狀物係從噴嘴朝向將沈積之基板釋放。於一些實施例中,蒸汽羽狀物之中心線可說明成對應於包括已蒸發材料之幾何重心之接線,以及在噴嘴之長度軸或縱向軸上之點,舉例為噴嘴之出口之點。根據 再其他實施例,噴嘴之平均分佈方向可說明成沿著具有噴嘴出口及將塗佈基板之間的最短距離的接線延伸,特別是說明成沿著具有在噴嘴出口之一點及將塗佈基板之間的最短距離的接線延伸,噴嘴出口之此點係位於噴嘴之長度軸或縱向軸上。 According to the embodiments described herein, the distribution direction of the nozzles can be understood as the average distribution direction of the nozzles. In some embodiments, the average distribution direction may substantially correspond to one of the plumes of the evaporated material, and the plumes of the evaporated material are released from the nozzle toward the coated substrate, especially the average distribution direction may be Essentially corresponds to wiring along one of the largest of the feathers of the evaporated material along the concentration of evaporated material. According to some embodiments, the average distribution direction of the nozzles can be understood as corresponding to the geometric centerline of the feathers of the evaporated material, and the feathers of the evaporated material are released from the nozzle toward the substrate to be deposited. In some embodiments, the centerline of the steam plume may be described as corresponding to the wiring including the geometric center of gravity of the evaporated material, and a point on the length or longitudinal axis of the nozzle, such as the point of the nozzle exit. according to In still other embodiments, the average distribution direction of the nozzles can be described as extending along a line having the nozzle outlet and the shortest distance between the coated substrates, and particularly, it can be described as having a point at the nozzle outlet and the The shortest distance between the wires extends, and this point of the nozzle exit is located on the length axis or the longitudinal axis of the nozzle.

第5b圖繪示根據一些實施例之包括第一材料源100a及第二材料源100b之材料沈積配置的上視圖。如第5a及5b圖中之例子中可見,第一分佈管106a之噴嘴712係提供第一分佈方向210且第二分佈管106b之噴嘴712係提供第二分佈方向211。一般來說,第一分佈管中與第二分佈管中之噴嘴係排列,使得第一分佈方向和第二分佈方向係彼此平行。根據一些實施例,第一分佈方向和第二分佈方向可從絕對平行排列偏差高達5°,例如是從絕對平行排列偏差約3°或約2°。根據一些實施例,如第5a與5b圖中標註之第一分佈方向210與第二分佈方向211可具有約30mm或更少之距離於彼此之間。 Figure 5b illustrates a top view of a material deposition configuration including a first material source 100a and a second material source 100b according to some embodiments. As can be seen from the examples in Figures 5a and 5b, the nozzle 712 of the first distribution pipe 106a provides a first distribution direction 210 and the nozzle 712 of the second distribution pipe 106b provides a second distribution direction 211. Generally, the nozzle systems in the first distribution pipe and the second distribution pipe are arranged so that the first distribution direction and the second distribution direction are parallel to each other. According to some embodiments, the first distribution direction and the second distribution direction may deviate from the absolute parallel arrangement by up to 5 °, such as about 3 ° or about 2 ° from the absolute parallel arrangement. According to some embodiments, the first distribution direction 210 and the second distribution direction 211 as marked in FIGS. 5a and 5b may have a distance of about 30 mm or less between each other.

如上已說明,繪示於第5a和5b圖中之材料沈積配置的第一分佈管和第二分佈管可具有類似三角形之形狀。第6a和6b圖繪示實質上為三角形的材料沈積配置之示意圖,在材料沈積配置中,第一分佈管和第二分佈管之噴嘴之分佈方向係實質上彼此平行。 As described above, the first distribution pipe and the second distribution pipe shown in the material deposition arrangement shown in FIGS. 5a and 5b may have a triangle-like shape. 6a and 6b are schematic diagrams of a substantially triangular material deposition configuration. In the material deposition configuration, the distribution directions of the nozzles of the first distribution pipe and the second distribution pipe are substantially parallel to each other.

第6a圖繪示一實施例之剖面圖,於此實施例中係提供具有第一分佈管106a之第一材料源,具有第二分佈管106b之第二材料源以及具有第三分佈管106c之第三材料源。根據一些實 施例,此些分佈管可裝配有加熱元件380和絕熱器879,用以改善加熱效率和避免已蒸發材料在分佈管中凝結。蒸發器控制殼體702係提供而相鄰於此些分佈管且經由絕熱器879連接此些分佈管。在第一分佈管106a、第二分佈管106b、及第三分佈管106c之上方的箭頭(當於投射之平面中看見時)係繪示已蒸發有機材料離開第一分佈管106a、第二分佈管106b、及第三分佈管106c。 此些分佈管之各自噴嘴的平均分佈方向係以參考符號210、211、及212標註。如於第6a圖中可見,不同分佈管之分佈方向係實質上平行。 Figure 6a shows a cross-sectional view of an embodiment in which a first material source having a first distribution tube 106a, a second material source having a second distribution tube 106b, and a third material tube having a third distribution tube 106c are provided. Third material source. According to some real In an embodiment, such distribution pipes may be equipped with heating elements 380 and adiabatic heaters 879 to improve heating efficiency and prevent condensation of evaporated materials in the distribution pipes. An evaporator control housing 702 is provided adjacent to the distribution pipes and connected to the distribution pipes via a heat insulator 879. The arrows above the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c (when seen in the plane of projection) show that the evaporated organic material leaves the first distribution pipe 106a, the second distribution Tube 106b, and third distribution tube 106c. The average distribution directions of the respective nozzles of these distribution pipes are marked with reference signs 210, 211, and 212. As can be seen in Figure 6a, the distribution directions of the different distribution tubes are substantially parallel.

此三個第一分佈管106a、第二分佈管106b、及第三分佈管106c之噴嘴712的局部圖及簡圖係繪示於第6b圖中。範例性繪示的此三個噴嘴712具有長度軸或縱向軸201、202、203。 噴嘴712可從第一分佈管106a、第二分佈管106b、及第三分佈管106c於第一分佈方向210、第二分佈方向211、及第三分佈方向212朝向將塗佈之基板(未繪示)導引已蒸發材料。如第6b圖中所示的實施例中,此三個分佈方向係彼此平行,或從絕對平行排列可偏差高達5°。 The partial and schematic diagrams of the nozzles 712 of the three first distribution pipes 106a, the second distribution pipe 106b, and the third distribution pipe 106c are shown in Figure 6b. The three nozzles 712 shown by way of example have a longitudinal axis or a longitudinal axis 201, 202, 203. The nozzle 712 may face the substrate to be coated (not shown) from the first distribution pipe 106a, the second distribution pipe 106b, and the third distribution pipe 106c in the first distribution direction 210, the second distribution direction 211, and the third distribution direction 212. (Shown) guide the evaporated material. In the embodiment shown in Figure 6b, the three distribution directions are parallel to each other, or can be offset by up to 5 ° from an absolutely parallel arrangement.

根據此處所述實施例,例如是如此處所指之第一、第二及第三分佈管的不同分佈管可流體連接於不同蒸發器,舉例在三個分佈管之情況中三個不同之蒸發器。於一些實施例中,不同分佈管可流體連通於相同形式之蒸發器,但蒸發不同材料。舉例來說,三個不同成份可藉由流體連通於三個蒸發器之三個分佈 管提供。於一例子中,如此處所述之材料沈積配置可使用來生產OLEDs。已蒸發材料可包括用於生產OLEDs之三個成份。 According to the embodiment described here, for example, the different distribution pipes of the first, second and third distribution pipes referred to herein may be fluidly connected to different evaporators. For example, in the case of three distribution pipes, three different evaporations Device. In some embodiments, different distribution tubes may be in fluid communication with the same form of evaporator, but vaporize different materials. For example, three different components can be fluidly connected to three distributions of three evaporators Tube provided. In one example, a material deposition configuration as described herein can be used to produce OLEDs. The evaporated material can include three ingredients used to produce OLEDs.

使用根據此處所述實施例之不同噴嘴之分佈方向為平行排列,且使用具有2:1或較大之長度對尺寸比的噴嘴可有助於改善已蒸發材料在從噴嘴釋放之特性之一致性(uniformity)及可預測性。舉例來說,實質上平行於另一、或相鄰之已蒸發材料的已蒸發材料之方向可讓已蒸發材料對遮罩及/或基板具有常態且一致的影響。於一例子中,不同分佈管之不同成份可對遮罩及/或基板具有實質上相同之衝擊角(impact angle),特別是對遮罩及/或基板實質上垂直之衝擊角。塗佈一或多個成份的製造可利用根據此處所述實施例之材料沈積配置以更精準的方式執行。再者,當不同材料源在分佈方向之間具有已定義角度時,具有平行排列之分佈方向的材料源可減少舉例為在已知系統中所付出之固定及計算努力。再者,如果不同成份係使用於不同材料源中,根據此處所述實施例之包括上述平行排列之分佈方向之材料沈積配置可均勻混合不同成份。 The use of different nozzles according to the embodiments described herein is arranged in parallel, and the use of nozzles having a length-to-size ratio of 2: 1 or larger can help improve the consistency of the characteristics of the evaporated material released from the nozzles. Uniformity and predictability. For example, the direction of the evaporated material that is substantially parallel to another or adjacent evaporated material may allow the evaporated material to have a normal and consistent effect on the mask and / or substrate. In one example, different components of different distribution tubes may have substantially the same impact angle to the mask and / or the substrate, especially the substantially perpendicular impact angle to the mask and / or the substrate. Manufacturing of one or more components can be performed in a more precise manner using a material deposition configuration according to the embodiments described herein. Furthermore, when different material sources have a defined angle between the distribution directions, a material source with a parallel arrangement of the distribution directions can reduce the fixing and computational effort that is exemplified in known systems. Furthermore, if different components are used in different material sources, according to the embodiment described herein, the material deposition configuration including the above-mentioned parallel arrangement of the distribution direction can uniformly mix the different components.

根據一些實施例,用以於真空腔室中沈積已蒸發材料於基板上之分佈管係提供。分佈管包括分佈管殼體以及噴嘴,噴嘴位於分佈管殼體中。噴嘴包括開孔長度與開孔尺寸,其中噴嘴之長度對尺寸比係等同於或大於2:1。根據可與此處所述其他實施例結合之一些實施例,噴嘴包括一材料,此材料對已蒸發有機材料係為化學惰性。於一例子中,已蒸發有機材料可代表性具 有約150℃及約650℃之間的溫度,更代表性約100℃及500℃之間的溫度。 According to some embodiments, a distribution tube system for depositing evaporated material on a substrate in a vacuum chamber is provided. The distribution pipe includes a distribution pipe housing and a nozzle, and the nozzle is located in the distribution pipe housing. The nozzle includes an opening length and an opening size, wherein a length to size ratio of the nozzle is equal to or greater than 2: 1. According to some embodiments that can be combined with other embodiments described herein, the nozzle includes a material that is chemically inert to the evaporated organic material. In one example, the evaporated organic material may be representative There are temperatures between about 150 ° C and about 650 ° C, and more typically temperatures between about 100 ° C and 500 ° C.

第7a至7d圖繪示根據此處所述實施例之分佈管之噴嘴的例子的示意圖。如第7a至7d圖中所示之噴嘴700包括開孔713(或通道或鑽孔713),用以導引已蒸發材料通過噴嘴。根據此處所述實施例,噴嘴700具有開孔長度714及開孔尺寸716。 此處所述實施例中的噴嘴之長度對尺寸比可為2:1或更大,舉例如上所述。名稱「開孔長度」和「開孔尺寸」可如上述有關於1a至1f圖之說明理解。 Figures 7a to 7d show schematic diagrams of examples of nozzles for distribution pipes according to the embodiments described herein. The nozzle 700 as shown in FIGS. 7a to 7d includes an opening 713 (or a channel or a hole 713) for guiding the evaporated material through the nozzle. According to the embodiment described herein, the nozzle 700 has an opening length 714 and an opening size 716. The length-to-size ratio of the nozzles in the embodiments described herein may be 2: 1 or greater, as exemplified above. The names "opening length" and "opening size" can be understood as described above with respect to the description of the drawings 1a to 1f.

第7a圖繪示包括第一噴嘴材料206及第二噴嘴材料208之噴嘴的示意圖。舉例來說,第一噴嘴材料206可為具有熱傳導數值大於21W/mK之材料,舉例為銅。於一些實施例中,第二噴嘴材料208可提供於開孔或通道713之內側且可對已蒸發有機材料為化學惰性。舉例來說,第二噴嘴材料可選自鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)、不鏽鋼、石英玻璃及石墨。如第7a圖中之實施例中可見,第二噴嘴材料208可提供成在通道713之內側的薄塗層。 FIG. 7 a is a schematic diagram of a nozzle including a first nozzle material 206 and a second nozzle material 208. For example, the first nozzle material 206 may be a material having a thermal conductivity value greater than 21 W / mK, such as copper. In some embodiments, the second nozzle material 208 may be provided inside the opening or channel 713 and may be chemically inert to the evaporated organic material. For example, the second nozzle material may be selected from tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating (DLC), stainless steel, quartz glass, and graphite. As can be seen in the embodiment in Figure 7a, the second nozzle material 208 may be provided as a thin coating on the inside of the channel 713.

第7b圖繪示具有第一噴嘴材料206和第二噴嘴材料208之一實施例的示意圖。如第7b圖中所示的噴嘴的例子係以第一部分和第二部分組成,第一部分係由第一噴嘴材料206(具有例如是大於21W/mk之熱傳導數值)所製成,第二部分係由第二噴嘴材料208製成,第二噴嘴材料208可對已蒸發有機材料為化學 惰性。於一例子中,第一和第二噴嘴材料可選自有關於第7a圖之說明。如第7b圖中可見,第二噴嘴材料208係為噴嘴之一部分,且特別是不只是內部通道側之一塗層。 FIG. 7b illustrates a schematic diagram of an embodiment having a first nozzle material 206 and a second nozzle material 208. The example of the nozzle shown in Fig. 7b is composed of a first part and a second part. The first part is made of the first nozzle material 206 (having a heat conduction value of, for example, greater than 21 W / mk), and the second part is Made of a second nozzle material 208, which can be chemically Inert. In one example, the first and second nozzle materials may be selected from the descriptions regarding FIG. 7a. As can be seen in Figure 7b, the second nozzle material 208 is part of the nozzle, and in particular is not just a coating on the inner channel side.

根據一些實施例,第二噴嘴材料之厚度可代表性在一些奈米到數個微米之一範圍中。於一例子中,第二噴嘴材料在噴嘴開孔之厚度可代表性在約10nm至約50μm之間,更代表性在約100nm至約50μm之間,且甚至更代表性在約500nm至約50μm之間。於一例子中,第二噴嘴材料之厚度可為約10μm。 According to some embodiments, the thickness of the second nozzle material may be representative in the range of some nanometers to several micrometers. In an example, the thickness of the second nozzle material in the nozzle opening may be representatively between about 10 nm and about 50 μm, more typically between about 100 nm and about 50 μm, and even more typically between about 500 nm and about 50 μm. between. In one example, the thickness of the second nozzle material may be about 10 μm.

第7c圖繪示噴嘴700(標註於第7d圖中)之一實施例的示意圖,其中噴嘴700係以第一噴嘴材料製成,第一噴嘴材料具有大於分佈管之熱傳導率的熱傳慮率或高於21W/mk之熱傳導率,此噴嘴可連接於分佈管。於此處所述之實施例中,第一噴嘴材料206對已蒸發有機材料係為惰性。於一例子中,第一噴嘴材料可選自Ta、Nb、Ti、DLC或石墨。 Figure 7c shows a schematic diagram of an embodiment of the nozzle 700 (labeled in Figure 7d). The nozzle 700 is made of a first nozzle material, and the first nozzle material has a heat transfer rate greater than the thermal conductivity of the distribution tube. Or higher than 21W / mk thermal conductivity, this nozzle can be connected to the distribution pipe. In the embodiment described herein, the first nozzle material 206 is inert to the evaporated organic material. In one example, the first nozzle material may be selected from Ta, Nb, Ti, DLC, or graphite.

第7d圖繪示根據此處所述實施例之如第7a圖中所示之噴嘴的示意圖。在開孔713中可見第二噴嘴材料208,而噴嘴700之外側係顯示出第一噴嘴材料206。 Fig. 7d shows a schematic diagram of a nozzle as shown in Fig. 7a according to the embodiment described herein. The second nozzle material 208 is visible in the opening 713, and the first nozzle material 206 is shown on the outside of the nozzle 700.

根據此處所述一些實施例,噴嘴之開孔或通道可具有代表性約1mm至約10mm之尺寸、更代表性約1mm至約6mm之尺寸,且甚至更代表性2mm至約5mm之尺寸,已蒸發材料係在蒸發製程期間通過噴嘴之開孔或通道,以到達將塗佈之基板。根據一些實施例,通道或開孔之尺寸可意指剖面之最小尺 寸,舉例為通道或開孔之直徑。於一實施例中,開孔或通道之尺寸係於噴嘴之出口進行量測。根據可與此處所述其他實施例結合之此處所述之一些實施例,開孔或通道可於公差區域H7中製造,舉例為以具有約10μm至18μm之公差製造。 According to some embodiments described herein, the opening or channel of the nozzle may have a size representative of about 1 mm to about 10 mm, more representative size of about 1 mm to about 6 mm, and even more representative size of 2 mm to about 5 mm, The evaporated material passes through the openings or channels of the nozzle during the evaporation process to reach the substrate to be coated. According to some embodiments, the size of the channel or opening may mean the smallest rule of the profile Inch, for example, the diameter of a channel or opening. In one embodiment, the size of the opening or channel is measured at the outlet of the nozzle. According to some embodiments described herein that can be combined with other embodiments described herein, the openings or channels can be made in the tolerance region H7, for example, with a tolerance of about 10 μm to 18 μm.

根據此處所述一些實施例,用以根據此處所述實施例之材料沈積配置或分佈管之噴嘴可包括螺紋,用以重複地連接噴嘴於分佈管且解除噴嘴對分佈管之連接,材料沈積配置用以於真空沈積腔室中沈積材料於基板上。於一些實施例中,具有用以連接於分佈管之螺紋的噴嘴可具有內螺紋及/或外螺紋,用以能夠反覆連接噴嘴於分佈管,特別是不需要損壞分佈管或噴嘴。舉例來說,具有已定義特性之第一噴嘴可連接於用以第一製程的分佈管。在第一製程完成之後,第一噴嘴可解除連接且第二噴嘴可連接於用以第二製程的分佈管。如果第一製程將再度執行,第二噴嘴可從分佈管解除連接且第一噴嘴可再度連接於分佈管,用以執行第一製程。根據一些實施例,分佈管可亦包括螺紋,用以噴嘴至分佈管之可交換連接,例如是藉由裝配(fitting)於噴嘴之螺紋的方式。 According to some embodiments described herein, the nozzles used for the material deposition configuration or distribution tube according to the embodiments described herein may include threads to repeatedly connect the nozzles to the distribution tube and disconnect the nozzles from the distribution tube. The deposition configuration is used to deposit material on the substrate in the vacuum deposition chamber. In some embodiments, the nozzle having a thread for connecting to the distribution pipe may have an internal thread and / or an external thread, so as to be able to repeatedly connect the nozzle to the distribution pipe, especially without damaging the distribution pipe or the nozzle. For example, a first nozzle having a defined characteristic may be connected to a distribution tube for a first process. After the first process is completed, the first nozzle can be disconnected and the second nozzle can be connected to the distribution pipe for the second process. If the first process is to be performed again, the second nozzle may be disconnected from the distribution pipe and the first nozzle may be connected to the distribution pipe again to perform the first process. According to some embodiments, the distribution tube may also include threads for interchangeable connection of the nozzle to the distribution tube, such as by fitting the threads of the nozzle.

根據此處所述一些實施例,如此處所述實施例中之材料沈積配置及如此處所述實施例中之分佈管可見於第8a至8c圖中。分佈管106可流體連通於坩鍋,用以分佈藉由坩鍋所提供之已蒸發材料。分佈管可舉例為延長的立方體,具有加熱單元715。蒸發坩鍋可為水庫(reservoir),用於利用外部加熱單元725 之將蒸發之有機材料。根據可與此處所述其他實施例結合之典型實施例,分佈管106係提供接線源。根據此處所述一些實施例,材料沈積配置100更包括數個開孔及/或出口,用以朝向基板釋放已蒸發材料,例如是沿著至少一接線排列之噴嘴。 According to some embodiments described herein, the material deposition configuration as in the embodiment described herein and the distribution tube as in the embodiment described herein can be seen in Figures 8a to 8c. The distribution tube 106 may be in fluid communication with the crucible for distributing the evaporated material provided by the crucible. The distribution tube may be exemplified as an extended cube with a heating unit 715. Evaporation crucible can be a reservoir for using an external heating unit 725 Organic material that will evaporate. According to a typical embodiment that can be combined with other embodiments described herein, the distribution tube 106 provides a wiring source. According to some embodiments described herein, the material deposition arrangement 100 further includes a plurality of openings and / or outlets for releasing the evaporated material toward the substrate, such as nozzles arranged along at least one line.

根據可與此處所述其他實施例結合之一些實施例。 分佈管之噴嘴可適用於在一方向中釋放已蒸發材料,此方向係不同於分佈管之長度方向,且例如是實質上垂直於分佈管之長度方向之一方向。根據一些實施例,出口(舉例為噴嘴)係排列,以具有+- 20°於水平之主要蒸發方向。根據一些特定實施例,蒸發方向可略微地向上定向,舉例為從水平向上15°之範圍中,例如是向上3°至7°。因此,基板可稍微傾斜,以實質上垂直於蒸發方向。 在具有傾斜之基板的情況下,可減少產生不需要的粒子。然而,根據此處所述實施例的噴嘴及材料沈積配置可亦使用於沈積設備中,此沈積設備係裝配以用於沈積材料於水平定向之基板上。 According to some embodiments that can be combined with other embodiments described herein. The nozzle of the distribution pipe can be adapted to release the evaporated material in a direction which is different from the length direction of the distribution pipe and is, for example, a direction substantially perpendicular to the length direction of the distribution pipe. According to some embodiments, the outlets (for example, nozzles) are arranged to have a main evaporation direction of + -20 ° to horizontal. According to some specific embodiments, the evaporation direction may be oriented slightly upward, for example, in a range of 15 ° from the horizontal upward, for example, from 3 ° to 7 ° upward. Therefore, the substrate may be slightly inclined so as to be substantially perpendicular to the evaporation direction. With an inclined substrate, the generation of unwanted particles can be reduced. However, the nozzle and material deposition arrangement according to the embodiments described herein may also be used in a deposition apparatus that is assembled for depositing material on a horizontally oriented substrate.

於一例子中,分佈管106之長度至少對應於在沈積設備中之將沈積基板的高度。於許多情況中,分佈管106之長度將至少10%或甚至20%長於將沈積基板之高度。具有長於基板之高度的分佈管,在基板之上端及/或基板之下端係可提供均勻沈積。 In one example, the length of the distribution tube 106 corresponds at least to the height of the substrate to be deposited in the deposition device. In many cases, the length of the distribution tube 106 will be at least 10% or even 20% longer than the height at which the substrate will be deposited. The distribution tube having a height longer than the substrate can provide uniform deposition at the upper end of the substrate and / or the lower end of the substrate.

根據可與此處所述其他實施例結合之一些實施例,分佈管之長度可為1.3m或以上,舉例為2.5m或以上。根據一配置,如第8a圖中所示,蒸發坩鍋104係提供於分佈管106之下 端。有機材料係於蒸發坩鍋104中蒸發。有機材料之蒸汽係在分佈管之底部進入分佈管106,且本質上偏側邊地(sideways)導引通過分佈管中之噴嘴朝向舉例為本質上垂直之基板。 According to some embodiments that can be combined with other embodiments described herein, the length of the distribution tube may be 1.3 m or more, for example 2.5 m or more. According to a configuration, as shown in Figure 8a, the evaporation crucible 104 is provided below the distribution tube 106 end. The organic material is evaporated in the evaporation crucible 104. The vapor of the organic material enters the distribution pipe 106 at the bottom of the distribution pipe, and is essentially sideways guided through the nozzles in the distribution pipe toward the substantially vertical substrate, for example.

第8b圖繪示材料源之一部分的放大圖,其中分佈管106係連接於蒸發坩鍋104。凸緣單元703係提供,凸緣單元703係裝配以提供蒸發坩鍋104和分佈管106之間的連接。舉例來說,蒸發坩鍋及分佈管係提供而作為分離單元,而可分離且連接或組裝於凸緣單元,舉例是為了進行材料源之操作。 FIG. 8b shows an enlarged view of a part of the material source, in which the distribution pipe 106 is connected to the evaporation crucible 104. A flange unit 703 is provided, and the flange unit 703 is assembled to provide a connection between the evaporation crucible 104 and the distribution pipe 106. For example, the evaporation crucible and the distribution pipe are provided as a separation unit, and can be separated and connected or assembled to the flange unit, for example, for the operation of a material source.

分佈管106具有內部中空空間710。加熱單元715可提供以加熱分佈管。因此,分佈管106可加熱至一溫度,使得有機材料之蒸汽係不凝結於分佈管106之牆的內部,有機材料之蒸汽藉由蒸發坩鍋104提供。 The distribution pipe 106 has an internal hollow space 710. A heating unit 715 may be provided to heat the distribution pipe. Therefore, the distribution pipe 106 can be heated to a temperature so that the vapor of the organic material does not condense inside the wall of the distribution pipe 106, and the vapor of the organic material is provided by the evaporation crucible 104.

舉例來說,分佈管可保持在一溫度,此溫度係代表性約1℃至約20℃,更代表性約5℃至約20℃,且甚至更代表性約10℃至約15℃高於將沈積於基板上之材料的蒸發溫度。兩個或多個加熱遮蔽件717係提供於分佈管106之管周圍。 For example, the distribution tube can be maintained at a temperature that is typically about 1 ° C to about 20 ° C, more typically about 5 ° C to about 20 ° C, and even more typically about 10 ° C to about 15 ° C higher than Evaporation temperature of the material to be deposited on the substrate. Two or more heating shields 717 are provided around the tubes of the distribution tube 106.

在操作期間,分佈管106可在凸緣單元703連接於蒸發坩鍋104。蒸發坩鍋104係裝配以接收將蒸發之有機材料且蒸發有機材料。根據一些實施例,將蒸發之材料可包括氧化銦錫(ITO)、NPD、Alq3、喹吖啶酮(Quinacridone)、Mg/AG、星狀(starburst)材料、及類似物之至少一者。第8b圖繪示穿過蒸發坩鍋104之殼體的剖面圖。再填充開孔係提供在舉例為蒸發坩鍋之上部,再 填充開孔可使用栓(plug)722、蓋(lid)、覆蓋件或類似物關閉,用以關閉蒸發坩鍋104之內部空間(enclosure)。 During operation, the distribution tube 106 may be connected to the evaporation crucible 104 at the flange unit 703. The evaporation crucible 104 is assembled to receive the organic material to be evaporated and to evaporate the organic material. According to some embodiments, the material to be evaporated may include at least one of indium tin oxide (ITO), NPD, Alq 3 , Quinacridone, Mg / AG, starburst material, and the like. FIG. 8b shows a cross-sectional view of the casing passing through the evaporation crucible 104. FIG. The refill opening is provided above the example of the evaporation crucible. The refill opening can be closed with a plug 722, lid, cover, or the like to close the internal space of the evaporation crucible 104 ( enclosure).

外部加熱單元725係提供於蒸發坩鍋104之內部空間中。外部加熱單元可沿著蒸發坩鍋104之牆的至少一部分延伸。根據可與此處所述其他實施例結合之一些實施例,一或多個中央加熱元件726可額外或選擇性提供。第8b圖繪示兩個中央加熱元件726。根據一些應用,蒸發坩鍋104可更包括遮罩物727。 The external heating unit 725 is provided in the internal space of the evaporation crucible 104. The external heating unit may extend along at least a portion of the wall of the evaporation crucible 104. According to some embodiments that may be combined with other embodiments described herein, one or more central heating elements 726 may be additionally or selectively provided. Figure 8b shows two central heating elements 726. According to some applications, the evaporation crucible 104 may further include a shield 727.

根據一些實施例,如有關於第8a至8b圖範例性繪示,蒸發坩鍋104係提供於分佈管106之下側。根據可與此處所述其他實施例結合之再其他實施例,蒸汽導管732可於分佈管之中央部提供於分佈管106,或可於分佈管之下端及分佈管之上端之間的另一位置提供於分佈管106。第8c圖繪示具有分佈管106及提供於分佈管之中央部的蒸汽導管732的材料源之一例子之示意圖。有機材料之蒸汽係產生於蒸發坩鍋104中且導引通過蒸汽導管732至分佈管106之中央部。蒸汽係經由數個噴嘴712離開分佈管106,此些噴嘴712可為有關於第7a至7d圖所說明之噴嘴。根據可與此處所述其他實施例結合之再其他實施例,兩個或多個蒸汽導管732可沿著分佈管106之長度提供於不同位置。於一些實施例中,蒸汽導管732可連接於一個蒸發坩鍋104或數個蒸發坩鍋104。舉例來說,各蒸汽導管732可具有對應之蒸發坩鍋104。或者,蒸發坩鍋104可流體連通於兩個或多個蒸汽導管732,此兩個或多個蒸汽導管732係連接於分佈管106。 According to some embodiments, the evaporation crucible 104 is provided on the lower side of the distribution tube 106 if it is shown by way of example in FIGS. 8a to 8b. According to still other embodiments that can be combined with other embodiments described herein, the steam duct 732 may be provided at the central portion of the distribution pipe to the distribution pipe 106, or may be another between the lower end of the distribution pipe and the upper end of the distribution pipe. The position is provided on the distribution pipe 106. FIG. 8c is a schematic diagram showing an example of a material source having a distribution pipe 106 and a steam duct 732 provided at a central portion of the distribution pipe. The vapor of the organic material is generated in the evaporation crucible 104 and guided through the steam duct 732 to the center of the distribution pipe 106. The steam leaves the distribution pipe 106 via a number of nozzles 712. These nozzles 712 may be the nozzles described with reference to Figures 7a to 7d. According to yet other embodiments that may be combined with other embodiments described herein, two or more steam ducts 732 may be provided at different locations along the length of the distribution pipe 106. In some embodiments, the steam conduit 732 may be connected to one evaporation crucible 104 or several evaporation crucibles 104. For example, each steam conduit 732 may have a corresponding evaporation crucible 104. Alternatively, the evaporation crucible 104 may be in fluid communication with two or more steam conduits 732 that are connected to the distribution pipe 106.

如此處所述,分佈管可為中空圓柱。名稱圓柱可理解為一般接受之具有圓形底部形狀及圓形頂部形狀,以及連接頂部圓形和底部圓形之曲面區域或殼。根據可與此處所述其他實施例結合之其他額外或選擇性實施例,名稱圓柱可在數感(mathematical sense)中更理解為具有任意底部形狀及一致之頂部形狀,以及連接頂部形狀和底部形狀之曲面區域或殼。因此,圓柱不一定必須為圓形剖面。取而代之,底部表面和頂部表面可具有不同於圓形之形狀。 As described herein, the distribution tube may be a hollow cylinder. The name cylinder can be understood as generally accepted as having a circular bottom shape and a circular top shape, and a curved area or shell connecting the top circle and the bottom circle. According to other additional or alternative embodiments that can be combined with other embodiments described herein, the name cylinder can be better understood in mathematical sense as having any bottom shape and a consistent top shape, and connecting the top shape and the bottom A curved area or shell of a shape. Therefore, the cylinder does not have to have a circular cross section. Instead, the bottom surface and the top surface may have a shape other than a circle.

第9a及9b圖繪示根據此處所述實施例之用於材料沈積配置之分佈管106之實施例的剖面圖。根據一些實施例,分佈管106包括分佈管殼體116,分佈管殼體116係包括第一殼體材料,或者係以第一殼體材料製成。如第9a及9b圖中之實施例中可見,分佈管係沿著第一方向136延伸的線性分佈管。 Figures 9a and 9b show cross-sectional views of an embodiment of a distribution tube 106 for a material deposition arrangement according to the embodiments described herein. According to some embodiments, the distribution pipe 106 includes a distribution pipe housing 116, which includes the first housing material or is made of the first housing material. As can be seen from the embodiments in Figures 9a and 9b, the distribution pipe is a linear distribution pipe extending along the first direction 136.

第9a圖繪示具有數個開孔107之分佈管之示意圖,此些開孔107係沿著在分佈管殼體中之第一方向延伸配置。於一些實施例中,分佈管中之開孔的牆109可理解為根據此處所述實施例之噴嘴。於一例子中,開孔107之牆109可包括第一噴嘴材料(舉例為以第一噴嘴材料塗佈),其中第一噴嘴材料之熱傳導數值可於一些例子中大於第一分佈管材料之熱傳導率或大於21W/mK。於一例子中,開孔107之牆109可以銅覆蓋。於一實施例中,牆可以銅及第二噴嘴材料覆蓋,第二噴嘴材料例如是對已蒸發有機材料係為化學惰性之一材料。 Fig. 9a shows a schematic diagram of a distribution pipe having a plurality of openings 107, and these openings 107 are arranged along a first direction in the distribution pipe housing. In some embodiments, the perforated wall 109 in the distribution pipe can be understood as a nozzle according to the embodiments described herein. In one example, the wall 109 of the opening 107 may include a first nozzle material (for example, coated with the first nozzle material), wherein the thermal conductivity value of the first nozzle material may be greater than the thermal conductivity of the first distribution pipe material in some examples. Rate or greater than 21W / mK. In one example, the wall 109 of the opening 107 may be covered with copper. In one embodiment, the wall may be covered with copper and a second nozzle material. The second nozzle material is, for example, a material that is chemically inert to the evaporated organic material.

第9b圖繪示根據此處所述實施例之分佈管之一實施例的示意圖。繪示於第9b圖中之分佈管106包括開孔107,開孔107提供而具有延伸牆108。一般來說,開孔107之延伸牆108係沿著實質上垂直於分佈管殼體116之第一方向136的方向延伸。根據一些實施例,開孔107之延伸牆108可從分佈管以任何適合之角度延伸。於一些實施例中,分佈管殼體116之開孔107之延伸牆108可提供根據此處所述實施例之分佈管106的噴嘴。 舉例來說,延伸牆108可包括第一噴嘴材料,或可以第一噴嘴材料製成。根據一些實施例,延伸牆108可在內側塗佈有第一及/或第二噴嘴材料,例如是對已蒸發有機材料係為化學惰性之材料。 FIG. 9b is a schematic diagram of an embodiment of a distribution tube according to the embodiment described herein. The distribution pipe 106 shown in FIG. 9b includes an opening 107 provided with an extension wall 108. Generally, the extension wall 108 of the opening 107 extends along a direction substantially perpendicular to the first direction 136 of the distribution tube housing 116. According to some embodiments, the extension wall 108 of the opening 107 may extend from the distribution pipe at any suitable angle. In some embodiments, the extension wall 108 of the opening 107 of the distribution pipe housing 116 may provide a nozzle for the distribution pipe 106 according to the embodiments described herein. For example, the extension wall 108 may include, or may be made of, a first nozzle material. According to some embodiments, the extension wall 108 may be coated on the inside with a first and / or a second nozzle material, such as a material that is chemically inert to the evaporated organic material.

於一些實施例中,延伸牆108係提供用於固定噴嘴於分佈管殼體116之固定輔助,噴嘴舉例為如第8a至8d圖中範例性繪示之噴嘴。根據一些實施例,延伸牆108可提供用以鎖固噴嘴於分佈管殼體116之螺紋。 In some embodiments, the extension wall 108 provides a fixing aid for fixing the nozzles to the distribution pipe housing 116. The nozzles are exemplified as the nozzles shown in FIGS. 8a to 8d. According to some embodiments, the extension wall 108 may provide threads for locking the nozzles to the distribution tube housing 116.

根據可與此處所述其他實施例結合之一些實施例,此處所指之材料沈積配置或分佈管之噴嘴可設計以形成具有類似cosn形狀輪廓之羽狀物(plume),其中n特別是大於4。於一例子中,噴嘴係設計以形成具有類似cos6形狀輪廓之羽狀物。如果需要窄形狀之羽狀物時,達成cosn形式羽狀物之已蒸發材料的噴嘴可有用處。舉例來說,包括用於基板之具有小開孔(例如是具有約20μm之尺寸的開孔)的遮罩之沈積製程從窄cosn形狀羽狀物可 獲益,且既然已蒸發材料之羽狀物係不散佈在遮罩上而是通過遮罩之開孔,材料利用可增加。根據一些實施例,噴嘴可設計,使得噴嘴之長度及噴嘴之通道之直徑的關係係為已定義關係,例如是2:1或更高。根據額外或選擇性實施例,噴嘴之通道可包括段差(steps)、斜面、準直儀(collimator)結構及/或壓力級(pressure stages),用以達成所需之羽狀物形狀。 According to some embodiments that can be combined with other embodiments described herein, the nozzles of the material deposition configuration or distribution tube referred to herein may be designed to form plumes with a contour similar to cos n shape, where n in particular Greater than 4. In one example, the nozzle is designed to form a feather with a contour similar to that of a cos 6 shape. If a narrow-shaped feather is needed, a nozzle for the evaporated material that achieves a cos n- shaped feather can be useful. For example, a deposition process including a mask with small openings (for example, openings having a size of about 20 μm) for a substrate can benefit from narrow cos n- shaped feathers, and since the feathers of the material have evaporated The objects are not scattered on the mask but through the openings of the mask, and the material utilization can be increased. According to some embodiments, the nozzle may be designed so that the relationship between the length of the nozzle and the diameter of the channel of the nozzle is a defined relationship, such as 2: 1 or higher. According to additional or alternative embodiments, the channels of the nozzle may include steps, bevels, collimator structures, and / or pressure stages to achieve the desired plume shape.

根據此處所述一些實施例,真空沈積腔室係說明。 真空沈積腔室包括根據上述之任何實施例之材料沈積配置。真空沈積腔室更包括基板支座,用以於沈積期間支撐基板。一般來說,在材料沈積配置之數個分佈管之至少一者與基板支座之間的距離係少於250mm。根據一些實施例,在分佈管與基板支座之間的距離可從分佈管之噴嘴出口和基板支座的一位置測量,基板支座的此位置係位於具有基板之一平面(舉例為接觸點、夾件或類似者)。 According to some embodiments described herein, a vacuum deposition chamber is illustrated. The vacuum deposition chamber includes a material deposition arrangement according to any of the embodiments described above. The vacuum deposition chamber further includes a substrate support for supporting the substrate during deposition. Generally, the distance between at least one of the plurality of distribution tubes arranged in the material deposition and the substrate support is less than 250 mm. According to some embodiments, the distance between the distribution tube and the substrate support can be measured from a nozzle outlet of the distribution tube and a position of the substrate support, and this position of the substrate support is located on a plane having the substrate (for example, a contact point , Clips or the like).

於一些實施例中,真空沈積腔室可包括材料沈積配置,材料沈積配置具有噴嘴,此噴嘴具有2:1或更大之開孔尺寸對開孔長度比。根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有第一材料源和第二材料源,例如是如上所述之第一和第二材料源(第一和第二材料源舉例為具有第一分佈管和第二分佈管,第一分佈管具有數個第一噴嘴,第二分佈管具有數個第二噴嘴)。一般來說,此些第一噴嘴之一第一噴嘴和此些第二噴嘴之一第二噴嘴之間 的距離係等同於或少於30mm。 In some embodiments, the vacuum deposition chamber may include a material deposition configuration having a nozzle having an opening size to opening length ratio of 2: 1 or greater. According to some embodiments that may be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a first material source and a second material source, such as the first and Two material sources (the first and second material sources are exemplified by having a first distribution pipe and a second distribution pipe, the first distribution pipe has a plurality of first nozzles, and the second distribution pipe has a plurality of second nozzles). Generally, between one of the first nozzles and one of the second nozzles The distance is equal to or less than 30mm.

根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有噴嘴,此噴嘴具有2:1或更大之開孔尺寸對開孔長度比。根據可與此處所述其他實施例結合之一些實施例,真空沈積腔室可包括具有第一材料源和第二材料源之材料沈積配置,第一材料源和第二材料源例如是如上所述之第一和第二材料源(第一和第二材料源舉例為具有第一分佈管和第二分佈管,第一分佈管具有數個第一噴嘴,第二分佈管具有數個第二噴嘴)。一般來說,第一分佈管之此些第一噴嘴的至少一者係提供第一分佈方向,且此些第二噴嘴的至少一者係提供第二分佈方向。於一些實施例中,此些第一噴嘴之此一或多個噴嘴的第一分佈方向和此些第二噴嘴之此一或多個噴嘴的第二分佈方向係彼此平行排列或從平行排列偏差高達5°排列。 According to some embodiments that may be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a nozzle having an opening size to opening length ratio of 2: 1 or greater. According to some embodiments that may be combined with other embodiments described herein, the vacuum deposition chamber may include a material deposition configuration having a first material source and a second material source, such as the above The first and second material sources described (the first and second material sources are exemplified by having a first distribution tube and a second distribution tube, the first distribution tube has several first nozzles, and the second distribution tube has several second nozzle). Generally, at least one of the first nozzles of the first distribution pipe provides a first distribution direction, and at least one of the second nozzles provides a second distribution direction. In some embodiments, the first distribution direction of the one or more nozzles of the first nozzles and the second distribution direction of the one or more nozzles of the second nozzles are arranged in parallel with each other or deviated from the parallel arrangement. Arranged up to 5 °.

根據一些實施例,真空沈積腔室可包括材料沈積配置,材料沈積配置具有分佈管,分佈管具有分佈管殼體及噴嘴,噴嘴係位於分佈管殼體中。噴嘴開孔之長度對尺寸比係為2:1或更大且噴嘴包括對已蒸發有機材料化學惰性之材料,已蒸發有機材料例如是上述所指之有機材料。 According to some embodiments, the vacuum deposition chamber may include a material deposition configuration having a distribution tube, the distribution tube having a distribution tube housing and a nozzle, and the nozzle is located in the distribution tube housing. The length-to-size ratio of the openings of the nozzle is 2: 1 or greater and the nozzle includes a material that is chemically inert to the evaporated organic material. The evaporated organic material is, for example, the organic material referred to above.

第10圖繪示沈積設備300之示意圖,根據此處所述實施例之材料沈積配置、分佈管或噴嘴可在沈積設備300中使用。下方所指之例如是噴嘴或分佈管之元件可為如上有關於第1a 至9b圖所述之元件。舉例來說,只要實施例之結合係不會彼此矛盾,下文中所指之分佈管可為有關於第1a至9b圖所範例性說明之分佈管。 FIG. 10 is a schematic diagram of the deposition apparatus 300. The material deposition configuration, distribution pipe, or nozzle according to the embodiment described herein can be used in the deposition apparatus 300. The elements referred to below, such as nozzles or distribution tubes, may be as described above with regard to 1a Elements to 9b. For example, as long as the combination of the embodiments does not contradict each other, the distribution pipe referred to below may be the distribution pipe described with reference to FIGS. 1a to 9b.

第10圖之沈積設備300包括材料源100d,位於真空腔室110之一位置。根據可與此處所述其他實施例結合之一些實施例,材料源係裝配以用於平移運動或繞著軸旋轉。材料源100d具有一或多個蒸發坩鍋104及一或多個分佈管106。兩個蒸發坩鍋及兩個分佈管係繪示於第10圖中。分佈管106係由支座102支撐。再者,根據一些實施例,蒸發坩鍋104可亦由支座102支撐。兩個基板121係提供於真空腔室110中。一般來說,用於在基板上遮蔽層沈積的遮罩132可提供於基板和材料源100d之間。於一些實施例中,遮罩可為像素遮罩,舉例為具有開孔之像素遮罩,開孔具有尺寸(舉例為剖面之直徑或最小維度),代表性為約10μm與約50μm之間,更代表性為約15μm與約40μm之間,且甚至更代表性為約15μm與約30μm之間。於一例子中,遮罩開孔之尺寸係約20μm。於另一例子中,遮罩開孔具有約50μm x 50μm之延展。有機材料係從分佈管106蒸發。 The deposition apparatus 300 of FIG. 10 includes a material source 100d, which is located at a position of the vacuum chamber 110. According to some embodiments that may be combined with other embodiments described herein, the material source is assembled for translational motion or rotation about an axis. The material source 100d has one or more evaporation crucibles 104 and one or more distribution tubes 106. Two evaporation crucibles and two distribution pipes are shown in Figure 10. The distribution pipe 106 is supported by a support 102. Furthermore, according to some embodiments, the evaporation crucible 104 may also be supported by the support 102. Two substrates 121 are provided in the vacuum chamber 110. In general, a mask 132 for masking layer deposition on a substrate may be provided between the substrate and the material source 100d. In some embodiments, the mask may be a pixel mask, for example, a pixel mask with openings, and the openings have a size (for example, the diameter or the smallest dimension of the cross section), typically between about 10 μm and about 50 μm. More representative is between about 15 μm and about 40 μm, and even more representative is between about 15 μm and about 30 μm. In one example, the size of the mask opening is about 20 μm. In another example, the mask opening has an extension of about 50 μm x 50 μm. The organic material is evaporated from the distribution pipe 106.

根據此處所述之實施例,基板係於本質上垂直位置塗佈有機材料。繪示於第10圖中的視角係為包括材料源100d之設備的上視圖。一般來說,分佈管係為線性蒸汽分佈噴頭。根據一些實施例,分佈管係提供本質上垂直延伸之接線源。根據可與此處所述其他實施例結合之數個實施例,本質上垂直在意指基板 方向時特別是理解為允許從垂直方向偏差20°或以下,舉例為10°或以下。舉例來說,此偏差可因基板支座具有從垂直方向之一些偏差而可能產生更穩定之基板位置來提供。然而,在沈積有機材料期間之基板方向係認定為本質上垂直,而不同於水平基板方向。於一些實施例中,基板的表面係藉由接線源塗佈,接線源係在對應於一基板維度和平移運動之方向中延伸,平移運動係沿著對應於其他基板維度之其他方向。根據其他實施例,沈積設備可為用於沈積材料於本質上水平方向基板上之沈積設備。舉例來說,於沈積設備中塗佈基板可在上或下之方向中執行。 According to the embodiments described herein, the substrate is coated with an organic material in a substantially vertical position. The viewing angle shown in FIG. 10 is a top view of the device including the material source 100d. Generally speaking, the distribution pipe system is a linear steam distribution nozzle. According to some embodiments, the distribution piping provides a wiring source that extends substantially vertically. According to several embodiments which can be combined with other embodiments described herein, essentially means substrate In the direction, it is particularly understood to allow a deviation of 20 ° or less from the vertical direction, for example, 10 ° or less. For example, this deviation may be provided because the substrate support has some deviation from the vertical direction, which may result in a more stable substrate position. However, the substrate orientation during the deposition of organic materials is considered to be essentially vertical, and is different from the horizontal substrate orientation. In some embodiments, the surface of the substrate is coated by a wiring source. The wiring source extends in a direction corresponding to a substrate dimension and a translational movement, and the translational movement is along other directions corresponding to other substrate dimensions. According to other embodiments, the deposition apparatus may be a deposition apparatus for depositing material on a substrate that is substantially horizontal. For example, coating a substrate in a deposition apparatus may be performed in an up or down direction.

第10圖繪示用以於真空腔室110中沈積有機材料之沈積設備300之一實施例的示意圖。材料源100d係提供於真空腔室110中之一軌道上,此軌道例如是環狀軌道或線性導件320。 軌道或線性導件320係裝配以用於材料源100d之平移運動。根據可與此處所述其他實施例結合之不同實施例,用於平移運動之驅動器可提供於材料源100d中、提供於軌道或線性導件320、提供於真空腔室110中或其組合。第10圖繪示閥205,閥205舉例為閘閥。閥205係提供至相鄰之真空腔室(未繪示於第10圖中)之真空密封。閥可開啟以傳送基板121或遮罩132進入真空腔室110中或離開真空腔室110。 FIG. 10 is a schematic diagram of an embodiment of a deposition apparatus 300 for depositing an organic material in a vacuum chamber 110. The material source 100d is provided on one of the tracks in the vacuum chamber 110, such as a circular track or a linear guide 320. The orbit or linear guide 320 is assembled for translational movement of the material source 100d. According to different embodiments that can be combined with other embodiments described herein, a driver for translational motion may be provided in a material source 100d, provided in a track or linear guide 320, provided in a vacuum chamber 110, or a combination thereof. FIG. 10 shows a valve 205, which is an example of a gate valve. The valve 205 is provided with a vacuum seal to an adjacent vacuum chamber (not shown in FIG. 10). The valve can be opened to transfer the substrate 121 or the mask 132 into or out of the vacuum chamber 110.

根據可與此處所述其他實施例結合之一些實施例,例如是維護真空腔室111之其他真空腔室係提供而相鄰於真空腔室110。於一些實施例中,真空腔室110及維護真空腔室111係 以閥207連接。閥207係裝配以開啟及關閉在真空腔室110及維護真空腔室111之間的真空密封。當閥207係為開啟狀態中時,材料源100d可傳送至維護真空腔室111。之後,閥可關閉以提供在真空腔室110和維護真空腔室111之間的真空密封。如果閥207係關閉時,維護真空腔室111可排氣且開啟,以用以維護材料源100d而無需破壞真空腔室110中之真空。 According to some embodiments that can be combined with other embodiments described herein, for example, other vacuum chambers for maintaining the vacuum chamber 111 are provided adjacent to the vacuum chamber 110. In some embodiments, the vacuum chamber 110 and the maintenance vacuum chamber 111 are It is connected by a valve 207. The valve 207 is assembled to open and close the vacuum seal between the vacuum chamber 110 and the maintenance vacuum chamber 111. When the valve 207 is in the open state, the material source 100d can be transferred to the maintenance vacuum chamber 111. Thereafter, the valve may be closed to provide a vacuum seal between the vacuum chamber 110 and the maintenance vacuum chamber 111. If the valve 207 is closed, the maintenance vacuum chamber 111 can be vented and opened to maintain the material source 100d without breaking the vacuum in the vacuum chamber 110.

在10圖中所示之實施例中,兩個基板121係支撐於在真空腔室110中之各自的傳送軌道上。根據一些實施例,在至少一分佈管和基板支座之間的距離係少於250mm。在第10圖中,此距離由在基板支座126與材料源100d之分佈管106之噴嘴的出口之間的距離101所表示。再者,兩個軌道係提供,用於設置遮罩132於其上。基板121之塗佈可由各自的遮罩132所遮蔽。 根據典型實施例,此些遮罩132係提供於遮罩框架131中,以支承遮罩132於預定位置中,此些遮罩132也就是對應(右手邊的)第一基板121之第一遮罩132與對應(左手邊的)第二基板121之第二遮罩132。 In the embodiment shown in FIG. 10, two substrates 121 are supported on respective transfer tracks in the vacuum chamber 110. According to some embodiments, the distance between the at least one distribution tube and the substrate support is less than 250 mm. In FIG. 10, this distance is represented by the distance 101 between the substrate support 126 and the outlet of the nozzle of the distribution tube 106 of the material source 100d. Furthermore, two rail systems are provided for placing a mask 132 thereon. The coating of the substrate 121 may be masked by a respective mask 132. According to a typical embodiment, the masks 132 are provided in a mask frame 131 to support the mask 132 in a predetermined position. The masks 132 are also first masks corresponding to the first substrate 121 (on the right-hand side). The cover 132 corresponds to a second cover 132 corresponding to the (left-hand side) second substrate 121.

根據可與此處所述其他實施例結合之一些實施例,基板121可由基板支座126支撐,基板支座126係連接於對準單元112。對準單元112可調整基板121相對於遮罩132之位置。 第10圖繪示基板支座126連接於對準單元112之實施例的示意圖。因此,基板係相對於遮罩132移動,以提供在有機材料沈積期間基板及遮罩之間恰當的對準。根據可與此處所述其他實施例 結合之進一步的實施例,遮罩132及/或支承遮罩132之遮罩框架131可選擇性或額外地連接於對準單元112。根據一些實施例,遮罩可相對於基板121定位或遮罩132和基板121兩者可相對於彼此定位。裝配以用以調整在基板121和遮罩132相對於彼此之間的位置的對準單元112係在沈積期間提供恰當對準的遮蔽,而有利於高品質、發光二極體(LED)顯示器製造、或OLED顯示器製造。 According to some embodiments that can be combined with other embodiments described herein, the substrate 121 may be supported by a substrate support 126, which is connected to the alignment unit 112. The alignment unit 112 can adjust the position of the substrate 121 relative to the cover 132. FIG. 10 is a schematic diagram illustrating an embodiment in which the substrate support 126 is connected to the alignment unit 112. Therefore, the substrate is moved relative to the mask 132 to provide proper alignment between the substrate and the mask during the deposition of the organic material. According to other embodiments described herein In a further embodiment, the mask 132 and / or the mask frame 131 supporting the mask 132 may be selectively or additionally connected to the alignment unit 112. According to some embodiments, the mask may be positioned relative to the substrate 121 or both the mask 132 and the substrate 121 may be positioned relative to each other. The alignment unit 112, which is assembled to adjust the position of the substrate 121 and the mask 132 relative to each other, provides a properly aligned mask during deposition, which is beneficial to the manufacture of high-quality, light-emitting diode (LED) displays , Or OLED display manufacturing.

如第10圖中所示,線性導件320係提供材料源100d之平移運動之方向。在材料源100d之兩側上係提供遮罩132。遮罩132可本質上平行於平移運動之方向延伸。再者,在材料源100d之相對側之基板121可亦在本質上平行於平移運動之方向延伸。 根據典型實施例,基板121可經由閥205移動至真空腔室110中且離開真空腔室110。沈積設備300可包括用以傳送各基板121之各自的傳送軌道。舉例來說,傳送軌道可平行於如第10圖中所示之基板位置延伸且進入或離開真空腔室110。 As shown in Figure 10, the linear guide 320 provides the direction of translational movement of the material source 100d. A mask 132 is provided on both sides of the material source 100d. The mask 132 may extend substantially parallel to the direction of the translational motion. Furthermore, the substrate 121 on the opposite side of the material source 100d may also extend substantially parallel to the direction of the translational movement. According to a typical embodiment, the substrate 121 may be moved into and out of the vacuum chamber 110 via the valve 205. The deposition apparatus 300 may include a respective transfer track to transfer each substrate 121. For example, the transfer track may extend parallel to the substrate position as shown in FIG. 10 and enter or leave the vacuum chamber 110.

一般來說,其他軌道係提供以用以支撐遮罩框架131及遮罩132。因此,可與此處所述其他實施例結合之一些實施例可包括在真空腔室110中之四個軌道。為了移動此些遮罩132之一者離開腔室來舉例是清洗遮罩,遮罩框架131及遮罩可移動至基板121之傳送軌道上。各自之遮罩框架可在用於基板之傳送軌道上接著離開或進入真空腔室110。雖然提供用以遮罩框架131的分離之傳送軌道來進入及離開真空腔室110係有可能的,但如 果只有兩個軌道係延伸進入及離開真空腔室110且此外遮罩框架131可藉由適合之致動器或機器人移動到用於基板之傳送軌道之各自一者,沈積設備300之所有權的成本可減少,此兩個軌道也就是基板之傳送軌道。 Generally, other rails are provided to support the mask frame 131 and the mask 132. Therefore, some embodiments that may be combined with other embodiments described herein may include four tracks in the vacuum chamber 110. In order to move one of these masks 132 out of the chamber, for example, a cleaning mask, the mask frame 131 and the mask can be moved to the transport track of the substrate 121. The respective mask frames may then leave or enter the vacuum chamber 110 on a transfer track for the substrate. Although it is possible to provide a separate transfer track to cover the frame 131 to enter and leave the vacuum chamber 110, it is possible The cost of ownership of the deposition apparatus 300 if only two track systems extend into and out of the vacuum chamber 110 and further the mask frame 131 can be moved to a respective one of the transport tracks for the substrate by a suitable actuator or robot Can be reduced, these two tracks are also the transfer tracks of the substrate.

第10圖繪示材料源100d之範例性實施例之示意圖。材料源100d包括支座102。支座102係裝配以沿著線性導件320平移運動。支座102支撐兩個蒸發坩鍋104及兩個分佈管106,分佈管106提供於蒸發坩鍋104之上方。在蒸發坩鍋中產生之蒸汽可向上地移動且離開分佈管之一或多個噴嘴或出口。 FIG. 10 is a schematic diagram of an exemplary embodiment of the material source 100d. The material source 100d includes a support 102. The mount 102 is assembled for translational movement along the linear guide 320. The support 102 supports two evaporation crucibles 104 and two distribution pipes 106, and the distribution pipes 106 are provided above the evaporation crucible 104. The steam generated in the evaporation crucible can move upwards and leave one or more nozzles or outlets of the distribution tube.

根據此處所述實施例,材料源包括一或多個蒸發坩鍋及一或多個分佈管,其中此一或多個分佈管之各自一者可流體連通於此一或多個蒸發坩鍋之各自一者。用於OLED裝置製造之數種應用包括處理特徵,其中一、二或多個有機材料係同時地蒸發。因此,如例如是第10圖中所示,兩個分佈管及對應之蒸發坩鍋可相鄰於彼此提供。因此,材料源100d可亦意指為材料源陣列,舉例來說,其中多於一種有機材料係同時蒸發。如此處所述,材料源陣列本身可意指為用於兩個或多個有機材料的材料源,例如是材料源陣列可提供用於蒸發及沈積三個材料到一基板上。根據一些實施例,材料源陣列可裝配以用於從不同材料源同時提供相同材料。 According to the embodiments described herein, the material source includes one or more evaporation crucibles and one or more distribution tubes, wherein each of the one or more distribution tubes can be in fluid communication with the one or more evaporation crucibles. Each one of them. Several applications for OLED device manufacturing include processing features in which one, two or more organic materials are evaporated simultaneously. Therefore, as shown in FIG. 10, for example, two distribution pipes and corresponding evaporation crucibles may be provided adjacent to each other. Therefore, the material source 100d may also mean an array of material sources, for example, where more than one organic material is evaporated at the same time. As described herein, the material source array itself may mean a material source for two or more organic materials. For example, the material source array may provide three materials for evaporation and deposition onto a substrate. According to some embodiments, the array of material sources may be assembled for simultaneously providing the same material from different material sources.

分佈管之此一或多個噴嘴可包括例如是可為提供在噴頭或另一蒸汽分佈系統中的一或多個噴嘴。提供於此處所述之 分佈管的噴嘴可為此處所述實施例中說明之噴嘴,例如是有關於第8a至8d圖說明之噴嘴。分佈管於此可理解為包括一內部空間,此內部空間具有數個開孔,使得在分佈管中之壓力係高於在分佈管之外側的壓力,舉例為至少一個數量級。於一例子中,在分佈管中之壓力可在約10-2至約10-3mbar之間。 The one or more nozzles of the distribution pipe may include, for example, one or more nozzles that may be provided in a spray head or another vapor distribution system. The nozzle provided in the distribution pipe described herein may be the nozzle described in the embodiment described herein, for example, the nozzle described with reference to Figures 8a to 8d. The distribution tube can be understood as including an internal space with several openings, so that the pressure in the distribution tube is higher than the pressure on the outside of the distribution tube, for example, at least one order of magnitude. In one example, the pressure in the distribution pipe may be between about 10 -2 to about 10 -3 mbar.

根據可與此處所述其他實施例結合之數個實施例,分佈管之旋轉可藉由蒸發器控制殼體之旋轉提供,至少分佈管係固定於蒸發器控制殼體上。藉由沿著環狀軌道之彎曲部分移動材料源,可額外或選擇性提供分佈管旋轉。一般來說,蒸發坩鍋係亦固定於蒸發器控制殼體上。因此,材料源包括分佈管及蒸發坩鍋,分佈管及蒸發坩鍋舉例可旋轉地固定在一起。 According to several embodiments that can be combined with other embodiments described herein, the rotation of the distribution tube can be provided by the rotation of the evaporator control casing, at least the distribution tube is fixed on the evaporator control casing. By moving the source of material along the curved portion of the circular orbit, the distribution tube rotation can be additionally or selectively provided. Generally, the evaporation crucible is also fixed on the evaporator control housing. Therefore, the material source includes a distribution tube and an evaporation crucible, and the distribution tube and the evaporation crucible are rotatably fixed together, for example.

根據可與此處所述其他實施例結合之一些實施例,分佈管或蒸發管可設計成三角形之形狀,使得分佈管之開孔或噴嘴可盡可能的彼此靠近。讓分佈管之開孔或噴嘴盡可能的彼此靠近係提供例如是改善混合不同有機材料,舉例為用於在共蒸發兩個、三個或甚至多個不同之有機材料的情況。 According to some embodiments that can be combined with other embodiments described herein, the distribution tube or evaporation tube can be designed in a triangular shape so that the openings or nozzles of the distribution tube can be as close to each other as possible. Having the openings or nozzles of the distribution tubes as close as possible to each other provides, for example, improved mixing of different organic materials, for example for the case of co-evaporating two, three, or even multiple different organic materials.

根據此處所述數個實施例,分佈管之出口側的寬度(包括開孔之分佈管之側)係為剖面之最大維度的30%或少於30%。有鑑於其,分佈管之開孔或相鄰分佈管之噴嘴可提供在較小距離處。此較小距離係改善數個有機材料之混合,此些有機材料係相鄰於彼此而進行蒸發。再者,獨立於改善有機材料之混合之外,以本質上平行方式面對基板之牆的寬度可額外或選擇性減 少。因此,以本質上平行方式面對基板的牆之表面區域可減少。 此配置減少提供至遮罩或基板之熱負荷,遮罩或基板係支撐在沈積區域中,或稍微在沈積區域之前。 According to several embodiments described herein, the width of the outlet side of the distribution pipe (including the side of the distribution pipe with openings) is 30% or less of the largest dimension of the section. In view of this, the opening of the distribution pipe or the nozzle of the adjacent distribution pipe can be provided at a small distance. This smaller distance improves the mixing of several organic materials, which are evaporated next to each other. Furthermore, independent of improving the mixing of organic materials, the width of the wall facing the substrate in an essentially parallel manner can be additionally or selectively reduced less. Therefore, the surface area of the wall facing the substrate in a substantially parallel manner can be reduced. This configuration reduces the heat load provided to the mask or substrate, which is supported in, or slightly before, the deposition area.

有鑑於材料源之三角形之形狀,朝向遮罩輻射之面積係額外或選擇性減少。此外,金屬板之堆疊可提供,以減少從材料源至遮罩之熱傳送,金屬板之堆疊係舉例為高達10個金屬板。根據可與此處所述其他實施例結合之一些實施例,加熱遮蔽件或金屬板可提供而具有用於噴嘴之孔口(orifices),且可貼附於至少源之前側,也就是面對基板之側。 Due to the shape of the triangle of the material source, the area radiating towards the mask is additionally or selectively reduced. In addition, stacking of metal plates can be provided to reduce heat transfer from the source of material to the mask. Stacking of metal plates is exemplified by up to 10 metal plates. According to some embodiments that may be combined with other embodiments described herein, a heating shield or a metal plate may be provided with orifices for nozzles and may be attached to at least the front side of the source, i.e. facing Side of the substrate.

雖然如第10圖中所示之實施例係提供具有可移動源之沈積設備,具有通常知識者可理解上述實施例可亦提供在數個沈積設備中,基板於處理期間係在此些沈積設備中移動。舉例來說,可沿著靜態材料源導引且驅動將塗佈之基板。 Although the embodiment shown in FIG. 10 is provided with a deposition device having a movable source, those having ordinary knowledge will understand that the above embodiment may also be provided in several deposition devices, and the substrate is attached to these deposition devices during processing. Mobile. For example, a substrate to be coated can be guided and driven along a source of static material.

此處所述實施例特別是有關於沈積有機材料,沈積有機材料舉例為在大面積基板上之OLED顯示器製造。根據一些實施例,大面積基板或支撐一或多個基板之載體,也就是大面積載體,可具有至少0.174m2之尺寸。舉例來說,沈積設備可適用於處理大面積基板,例如是第5代、第7.5代、第8.5代、或甚至第10代,第5代係對應於約1.4m2之基板(1.1m x 1.3m),第7.5代對應於約4.29m2之基板(1.95m x 2.2m),第8.5代對應於約5.7m2之基板(2.2m x 2.5m),第10代對應於約8.7m2之基板(2.85m×3.05m)。甚至例如是第11代及第12代之更高代及對應 之基板面積可以類似之方式應用。根據可與此處所述其他實施例結合之典型實施例,基板厚度可為從0.1至1.8mm及用於基板之支承配置可適用於此種基板厚度。然而,特別是,基板厚度可為約0.9mm或以下,例如是0.5mm或0.3mm,且支承配置係適用於此種基板厚度。一般來說,基板可由任何適合於材料沈積的材料製成。舉例來說,基板可以選自由玻璃(舉例為鈉鈣玻璃、硼矽玻璃等)、金屬、聚合物、陶瓷、複合材料、碳纖材料或任何其他材料或可以沈積製程塗佈之材料的組合所組成之材料製成。 The embodiments described herein are particularly related to the deposition of organic materials. The deposition of organic materials is exemplified by the manufacture of OLED displays on large-area substrates. According to some embodiments, a large-area substrate or a carrier supporting one or more substrates, that is, a large-area carrier, may have a size of at least 0.174 m 2 . For example, the deposition equipment can be suitable for processing large-area substrates, such as the 5th generation, 7.5th generation, 8.5th generation, or even the 10th generation. The 5th generation corresponds to a substrate of about 1.4m 2 (1.1mx 1.3 m), 7.5G corresponding to the substrate 2 of about 4.29m (1.95mx 2.2m), corresponding to about 8.5 Generation of 5.7m 2 substrate (2.2mx 2.5m), the first passage 10 2 corresponding to the substrate of about 8.7m (2.85m x 3.05m). Even higher generations and corresponding substrate areas such as the 11th and 12th generations can be applied in a similar manner. According to a typical embodiment that can be combined with other embodiments described herein, the substrate thickness can be from 0.1 to 1.8 mm and the supporting arrangement for the substrate can be adapted to such substrate thickness. However, in particular, the substrate thickness may be about 0.9 mm or less, such as 0.5 mm or 0.3 mm, and the support arrangement is suitable for such a substrate thickness. Generally, the substrate may be made of any material suitable for material deposition. For example, the substrate may be selected from the group consisting of glass (for example, soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite material, carbon fiber material, or any other material or a combination of materials that can be coated by a deposition process. Made of materials.

根據一些實施例,用以於真空沈積腔室中沈積已蒸發材料於基板上之方法係提供,真空沈積腔室具有腔室空間。腔室空間可理解為腔室牆所包含之空間,且特別是提供於相同壓力規範之空間。繪示根據此處所述之方法的流程圖400係繪示於第11圖中。此方法於方塊410中包括利用第一材料蒸發器蒸發第一材料,第一材料蒸發器係排列在腔室空間中。舉例來說,第一材料蒸發器可為用以蒸發有機材料之源。於一例子中,蒸發器可適用於蒸發具有約150°至約500°之蒸發溫度的材料。於一些實施例中,材料源可為坩鍋。 According to some embodiments, a method for depositing an evaporated material on a substrate in a vacuum deposition chamber is provided, and the vacuum deposition chamber has a chamber space. The cavity space can be understood as the space contained in the cavity wall, and especially the space provided at the same pressure specification. A flowchart 400 illustrating the method described herein is shown in FIG. 11. The method in block 410 includes using a first material evaporator to evaporate the first material, the first material evaporator being arranged in the chamber space. For example, the first material evaporator may be a source for evaporating organic materials. In one example, the evaporator may be adapted to evaporate a material having an evaporation temperature of about 150 ° to about 500 °. In some embodiments, the source of material may be a crucible.

於方塊420中,此方法包括提供已蒸發第一材料至第一分佈管,第一分佈管包括第一分佈管殼體。根據此處所述實施例,第一分佈管係流體連通於第一材料蒸發器。根據一些實施例,分佈管可為如上所述之分佈管,舉例為線性分佈管、或如第1a至9b圖所示之分佈管。提供已蒸發第一材料至第一分佈管更 包括在第一分佈管中提供約10-2-10-1mbar之壓力。在方塊430中,已蒸發材料係導引通過在第一分佈管殼體中之數個第一噴嘴的一或多者。一般來說,此些第一噴嘴的此一或多的噴嘴具有開孔長度及開孔尺寸,其中導引已蒸發材料通過此一或多個噴嘴更包括導引已蒸發材料通過具有長度對尺寸比等同於或大於2:1之一或多個噴嘴。根據一些實施例,導引已蒸發材料通過之噴嘴可為如上實施例中所說明的噴嘴。於一例子中,噴嘴可為可鎖固於分佈管殼體。於可與此處所述其他實施例結合之一實施例中,噴嘴可包括一材料,此材料對已蒸發有機材料係為化學惰性,例如是如第7a至7d圖中所示之噴嘴。根據一些實施例,噴嘴可為分佈管之一部分,如相關於第9a及9b圖中所範例性繪示及說明。 At block 420, the method includes providing the evaporated first material to a first distribution tube, the first distribution tube including a first distribution tube housing. According to the embodiments described herein, the first distribution pipe system is in fluid communication with the first material evaporator. According to some embodiments, the distribution pipe may be a distribution pipe as described above, such as a linear distribution pipe, or a distribution pipe as shown in FIGS. 1a to 9b. Providing the evaporated first material to the first distribution pipe further includes providing a pressure in the first distribution pipe of about 10 -2 -10 -1 mbar. At a block 430, the evaporated material is directed through one or more of the first nozzles in the first distribution tube housing. Generally, the one or more nozzles of the first nozzles have an opening length and an opening size, wherein guiding the evaporated material through the one or more nozzles further includes guiding the evaporated material through a length-to-size The ratio is equal to or greater than one or more nozzles of 2: 1. According to some embodiments, the nozzle that guides the evaporated material through may be a nozzle as described in the above embodiments. In one example, the nozzle may be lockable to the distribution tube housing. In one embodiment that can be combined with other embodiments described herein, the nozzle may include a material that is chemically inert to the evaporated organic material, such as the nozzles shown in Figures 7a to 7d. According to some embodiments, the nozzle may be part of a distribution tube, as shown and illustrated by way of example in relation to Figures 9a and 9b.

於方塊440中,已蒸發材料係朝向腔室空間中之基板釋放至腔室空間。一般來說,腔室空間係提供10-5至10-7mbar之壓力,更代表性約10-6至約10-7mbar。舉例來說,真空腔室可包括幫浦、密封件、及類似物,用以能夠讓腔室排氣至約10-5至10-7mbar之壓力且用以保持在真空腔室中之壓力。於一些實施例中,從噴嘴釋放之蒸汽羽狀物可具有類似cos6分佈。根據此處所述一些實施例,具有類似cos6分佈之蒸汽羽狀物可比具有類似cos1分佈之蒸汽羽狀物提供較小之遮蔽效應。此效應例如是繪示於第3a至3c圖中。具有類似cos6分佈之已蒸發材料的情況中,在基板上之材料沈積的均勻以及沈積之準確性可增加。 At block 440, the evaporated material is released into the chamber space toward the substrate in the chamber space. Generally, the chamber space is provided with a pressure of 10 -5 to 10 -7 mbar, more typically about 10 -6 to about 10 -7 mbar. For example, the vacuum chamber may include pumps, seals, and the like to be able to vent the chamber to a pressure of about 10 -5 to 10 -7 mbar and to maintain the pressure in the vacuum chamber. . In some embodiments, the steam plumes released from the nozzle may have a similar cos 6 distribution. According to some embodiments described herein, a steam plume with a similar cos 6 distribution may provide a smaller shielding effect than a steam plume with a similar cos 1 distribution. This effect is illustrated, for example, in Figures 3a to 3c. In the case of evaporated material with a similar cos 6 distribution, the uniformity of material deposition on the substrate and the accuracy of deposition can be increased.

根據一些實施例,此方法更包括利用在腔室空間中 之第二材料蒸發器蒸發第二材料,提供已蒸發第二材料至第二分佈管,第二分佈管包括第二分佈管殼體。根據一些實施例,第二材料可為相同於第一材料之材料。於其他實施例中,第二材料係不同於第一材料。於一些實施例中,第二分佈管可為如上述之分佈管。一般來說,第二分佈管係流體連通於第二材料蒸發器,且提供已蒸發第二材料至第二分佈管係包括在第二分佈管中提供約10-2-10-1mbar之壓力。真空腔室及/或材料沈積配置可提供而具有幫浦、密封件、閥、及類似物,用以提供且維持在分佈管中之壓力。此方法可更包括導引已蒸發材料通過在第二分佈管殼體中之數個第二噴嘴的一或多者。於一些實施例中,已蒸發第一材料及已蒸發第二材料係在少於30mm之距離中分別導引通過第一分佈管之此一或多個第一噴嘴及第二分佈管之此一或多個第二噴嘴。少於30mm之距離可讓在基板上之不同的已蒸發材料準確沈積,舉例為製造OLED顯示器或類似物。 According to some embodiments, the method further includes using a second material evaporator in the chamber space to evaporate the second material to provide the evaporated second material to the second distribution pipe, and the second distribution pipe includes a second distribution pipe housing. According to some embodiments, the second material may be the same material as the first material. In other embodiments, the second material is different from the first material. In some embodiments, the second distribution pipe may be a distribution pipe as described above. Generally, the second distribution pipe system is in fluid communication with the second material evaporator, and providing the evaporated second material to the second distribution pipe system includes providing a pressure in the second distribution pipe of about 10 -2 -10 -1 mbar . Vacuum chambers and / or material deposition configurations can be provided with pumps, seals, valves, and the like to provide and maintain the pressure in the distribution tube. The method may further include directing the evaporated material through one or more of the plurality of second nozzles in the second distribution tube housing. In some embodiments, the evaporated first material and the evaporated second material are respectively guided through the one or more first nozzles of the first distribution tube and the one of the second distribution tube in a distance of less than 30 mm. Or multiple second nozzles. A distance of less than 30 mm allows accurate deposition of different evaporated materials on the substrate, such as manufacturing OLED displays or the like.

根據可與此處所述其他實施例結合之數個實施例,已蒸發第一材料係從在第一分佈方向中之第一分佈管之此一或多個第一噴嘴釋放,第一分佈方向係平行於第二分佈管之此一或多個第二噴嘴的第二分佈方向,或從平行排列偏差高達5°。分佈方向之平行排列可提供來自不同材料源之不同已蒸發材料已定義沈積且混合特徵。 According to several embodiments that can be combined with other embodiments described herein, the evaporated first material is released from the one or more first nozzles of the first distribution tube in the first distribution direction, the first distribution direction It is parallel to the second distribution direction of the one or more second nozzles of the second distribution pipe, or a deviation of up to 5 ° from the parallel arrangement. The parallel arrangement of the distribution directions can provide defined deposition and mixing characteristics of different evaporated materials from different material sources.

於可與此處所述其他實施例結合之再其他實施例中,第一分佈管及第二分佈管之至少一者的此一或多個噴嘴包括 一材料,此材料對已蒸發有機材料係為化學惰性。噴嘴包括惰性材料(舉例為作為噴嘴開孔之塗佈的惰性材料),通過噴嘴之已蒸發材料係不受噴嘴材料影響且保持在需要的狀態中。舉例來說,已蒸發材料之成份係在噴嘴之前及之後保持相同。於一例子中,方向、流速及壓力可仍舊受噴嘴影響。 In still other embodiments that can be combined with other embodiments described herein, the one or more nozzles of at least one of the first distribution pipe and the second distribution pipe include A material that is chemically inert to evaporated organic materials. The nozzle includes an inert material (for example, a coated inert material as a nozzle opening), and the evaporated material passing through the nozzle is not affected by the nozzle material and is maintained in a desired state. For example, the composition of the evaporated material remains the same before and after the nozzle. In one example, the direction, flow rate, and pressure may still be affected by the nozzle.

於一些實施例中,此方法包括加熱分佈管至將沈積於基板上之材料之蒸發溫度或以上。分佈管之加熱可藉由加熱裝置執行。於一例子中,加熱裝置之成效可由加熱遮蔽件支援,如舉例為上述有關於第8a至8c圖之說明。 In some embodiments, the method includes heating the distribution tube to a temperature above the evaporation temperature of the material to be deposited on the substrate. The heating of the distribution tube can be performed by a heating device. In one example, the effectiveness of the heating device can be supported by the heating shield. For example, the above description is illustrated in Figures 8a to 8c.

根據一些實施例,係提供如此處所述之材料沈積配置的使用,及/或如此處所述之分佈管之使用。 According to some embodiments, the use of a material deposition arrangement as described herein and / or the use of a distribution tube as described herein is provided.

綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (25)

一種材料沈積配置(100),用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上,該材料沈積配置包括:一第一材料源(100a),包括:一第一材料蒸發器(102a),裝配以用於蒸發將沈積於該基板(121)上之一第一材料;一第一分佈管(106a),包括一第一分佈管殼體(116),其中該第一分佈管係流體連通於該第一材料蒸發器;以及複數個第一噴嘴(712),位於該第一分佈管殼體(116)中,其中該些第一噴嘴之一或多個噴嘴包括一開孔長度(714)及一開孔尺寸(716),其中該些第一噴嘴之該一或多個噴嘴之長度對尺寸比係等同於或大於2:1;以及一第二材料源(100b),包括:一第二材料蒸發器(102b),裝配以用於蒸發將沈積於該基板上之一第二材料;一第二分佈管(106b),包括一第二分佈管殼體,其中該第二分佈管係流體連通於該第二材料蒸發器;以及複數個第二噴嘴(712),位於該第二分佈管殼體中;其中該些第一噴嘴之一第一噴嘴與該些第二噴嘴之一第二噴嘴之間的一距離(200)係等同於或少於30mm;以及其中該第一分佈管之出口側的寬度係該第一分佈管之剖面之最大維度之30%或更少。A material deposition configuration (100) is used to deposit an evaporated material on a substrate (121) in a vacuum chamber (110). The material deposition configuration includes: a first material source (100a), including: a first A material evaporator (102a), configured to evaporate a first material to be deposited on the substrate (121); a first distribution pipe (106a), including a first distribution pipe housing (116), wherein The first distribution pipe is in fluid communication with the first material evaporator; and a plurality of first nozzles (712) are located in the first distribution pipe housing (116), wherein one or more of the first nozzles The nozzle includes an opening length (714) and an opening size (716), wherein a length to size ratio of the one or more nozzles of the first nozzles is equal to or greater than 2: 1; and a second material The source (100b) includes: a second material evaporator (102b) assembled for evaporating a second material to be deposited on the substrate; a second distribution tube (106b) including a second distribution tube shell Body, wherein the second distribution pipe is in fluid communication with the second material evaporator; and a plurality of second nozzles (712) are located in the first Two distribution tube housings; a distance (200) between one of the first nozzles of the first nozzles and one of the second nozzles of the second nozzle is equal to or less than 30 mm; and wherein the first The width of the outlet side of the distribution pipe is 30% or less of the maximum dimension of the cross section of the first distribution pipe. 如申請專利範圍第1項所述之材料沈積配置,其中該些第一噴嘴之該第一噴嘴與該些第二噴嘴之該第二噴嘴之間的該距離(200)係為一水平距離。The material deposition arrangement according to item 1 of the scope of the patent application, wherein the distance (200) between the first nozzle of the first nozzles and the second nozzle of the second nozzles is a horizontal distance. 如前述申請專利範圍第1及2項之任一項所述之材料沈積配置,其中該第一分佈管(106a)和該第二分佈管(106b)之間的一距離係等同於或少於30mm。The material deposition arrangement according to any one of the foregoing claims 1 and 2, wherein a distance between the first distribution pipe (106a) and the second distribution pipe (106b) is equal to or less than 30mm. 如申請專利範圍第1及2項之任一項所述之材料沈積配置,其中該些第一噴嘴之該第一噴嘴與該些第二噴嘴之該第二噴嘴之間的該距離(200)係為該第一噴嘴之第一中心點與該第二噴嘴之第二中心點之間的一距離。The material deposition arrangement according to any one of claims 1 and 2 of the scope of patent application, wherein the distance between the first nozzles of the first nozzles and the second nozzle of the second nozzles (200) It is a distance between a first center point of the first nozzle and a second center point of the second nozzle. 如申請專利範圍第1及2項之任一項所述之材料沈積配置,其中該第一分佈管(106a)之該些第一噴嘴的該一或多個噴嘴(712)係裝配以提供一第一分佈方向(210),且其中該第二分佈管(106b)之該些第二噴嘴的該一或多個噴嘴(712)係裝配以提供一第二分佈方向(211),且其中該第一分佈方向(210)與該第二分佈方向(211)係彼此平行排列,或係從平行排列偏差高達5°排列。The material deposition arrangement according to any one of claims 1 and 2, wherein the one or more nozzles (712) of the first nozzles of the first distribution pipe (106a) are assembled to provide a The first distribution direction (210), and wherein the one or more nozzles (712) of the second nozzles of the second distribution pipe (106b) are assembled to provide a second distribution direction (211), and wherein the The first distribution direction (210) and the second distribution direction (211) are arranged parallel to each other, or are arranged in parallel with a deviation of up to 5 °. 一種材料沈積配置(100),用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上,該材料沈積配置包括:一第一材料源(100a),包括:一第一材料蒸發器(102a),裝配以用於蒸發將沈積於該基板(121)上之一第一材料;一第一分佈管(106a),包括一第一分佈管殼體(116),其中該第一分佈管(106a)係流體連通於該第一材料蒸發器(102a);以及複數個第一噴嘴(712),位於該第一分佈管殼體(116)中,其中該些第一噴嘴之一或多個噴嘴包括一開孔長度(714)及一開孔尺寸(716)且係裝配以提供一第一分佈方向(210),其中該些第一噴嘴之該一或多個噴嘴之長度對尺寸比係等同於或大於2:1;以及一第二材料源(100b),包括:一第二材料蒸發器(102b),裝配以用於蒸發將沈積於該基板(121)上之一第二材料;一第二分佈管(106b),包括一第二分佈管殼體(116),其中該第二分佈管(106b)係流體連通於該第二材料蒸發器(102b);以及複數個第二噴嘴(712),位於該第二分佈管殼體(116)中,其中該些第二噴嘴之一或多個噴嘴係裝配以提供一第二分佈方向(211);其中該些第一噴嘴的該一或多個噴嘴(712)的該第一分佈方向(210)與該些第二噴嘴的該一或多個噴嘴(712)之該第二分佈方向(211)係彼此平行排列,或係從平行排列偏差高達5°排列;以及其中該第一分佈管之出口側的寬度係該第一分佈管之剖面之最大維度之30%或更少。A material deposition configuration (100) is used to deposit an evaporated material on a substrate (121) in a vacuum chamber (110). The material deposition configuration includes: a first material source (100a), including: a first A material evaporator (102a), configured to evaporate a first material to be deposited on the substrate (121); a first distribution pipe (106a), including a first distribution pipe housing (116), wherein The first distribution pipe (106a) is in fluid communication with the first material evaporator (102a); and a plurality of first nozzles (712) are located in the first distribution pipe housing (116), where the first One or more nozzles include an opening length (714) and an opening size (716) and are assembled to provide a first distribution direction (210), wherein the one or more nozzles of the first nozzles The length-to-size ratio is equal to or greater than 2: 1; and a second material source (100b) includes: a second material evaporator (102b), which is assembled for evaporation to be deposited on the substrate (121) A second material; a second distribution pipe (106b), including a second distribution pipe housing (116), wherein the second distribution pipe (106b) is in fluid communication The second material evaporator (102b); and a plurality of second nozzles (712) located in the second distribution tube housing (116), wherein one or more of the second nozzles are assembled to provide a A second distribution direction (211); wherein the first distribution direction (210) of the one or more nozzles (712) of the first nozzles and the one or more nozzles (712) of the second nozzles The second distribution direction (211) is arranged parallel to each other, or is arranged from a parallel arrangement with a deviation of up to 5 °; and wherein the width of the exit side of the first distribution pipe is 30% of the maximum dimension of the section of the first distribution pipe Or less. 如申請專利範圍第6項所述之材料沈積配置,其中該第一分佈方向(210)對應於該第一分佈管(106a)之該些第一噴嘴之該一或多個噴嘴(712)的長度方向,且其中該第二分佈方向(211)對應於該第二分佈管(106b)之該些第二噴嘴之該一或多個噴嘴(712)的長度方向。The material deposition arrangement according to item 6 of the scope of the patent application, wherein the first distribution direction (210) corresponds to the The length direction, and wherein the second distribution direction (211) corresponds to the length direction of the one or more nozzles (712) of the second nozzles of the second distribution pipe (106b). 如申請專利範圍第6項所述之材料沈積配置,其中該第一分佈方向(210)對應於從該第一分佈管(106a)之該些第一噴嘴之該一或多個噴嘴(712)釋放的該已蒸發材料的羽狀物(plume)的一平均分佈方向,且其中該第二分佈方向(211)對應於從該第二分佈管(106b)之該些第二噴嘴之該一或多個噴嘴(712)釋放的該已蒸發材料的羽狀物的一平均分佈方向。The material deposition arrangement according to item 6 of the scope of the patent application, wherein the first distribution direction (210) corresponds to the one or more nozzles (712) from the first nozzles of the first distribution pipe (106a). An average distribution direction of the plume of the evaporated material released, and wherein the second distribution direction (211) corresponds to the one or the second nozzles from the second distribution pipe (106b) An average distribution direction of the plumes of the evaporated material released by the plurality of nozzles (712). 如申請專利範圍第6至8項之任一項所述之材料沈積配置,其中該些第一噴嘴之一第一噴嘴與該些第二噴嘴之一第二噴嘴之間的一距離係等同於或少於30mm。The material deposition arrangement according to any one of claims 6 to 8, wherein a distance between a first nozzle of one of the first nozzles and a second nozzle of one of the second nozzles is equal to Or less than 30mm. 如申請專利範圍第6至8項之任一項所述之材料沈積配置,其中該第一分佈管(106a)與該第二分佈管(106b)之至少一者的該些噴嘴之該一或多個噴嘴(712)包括一材料,該材料對一已蒸發有機材料係為化學惰性(chemically inert)。The material deposition arrangement according to any one of claims 6 to 8, in which the one or more of the nozzles of at least one of the first distribution pipe (106a) and the second distribution pipe (106b) The plurality of nozzles (712) includes a material that is chemically inert to an evaporated organic material. 一種分佈管(106a;106b;106c),用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上,該分佈管包括:一分佈管殼體(116);以及一噴嘴(712),位於該分佈管殼體(116)中,其中該噴嘴(712)包括一開孔(713),該開孔具有一開孔長度(714)及一開孔尺寸(716);其中該噴嘴之長度對尺寸比係等同於或大於2:1;以及其中該噴嘴(712)包括一材料,該材料對一已蒸發有機材料係為化學惰性。A distribution tube (106a; 106b; 106c) for depositing evaporated material on a substrate (121) in a vacuum chamber (110). The distribution tube includes: a distribution tube housing (116); and A nozzle (712) located in the distribution pipe housing (116), wherein the nozzle (712) includes an opening (713), the opening has an opening length (714) and an opening size (716); The nozzle has a length-to-size ratio equal to or greater than 2: 1; and the nozzle (712) includes a material that is chemically inert to an evaporated organic material. 如申請專利範圍第11項所述之分佈管,其中對該已蒸發有機材料為化學惰性之該材料係於高達650℃之一溫度為化學惰性。The distribution tube according to item 11 of the scope of the patent application, wherein the material which is chemically inert to the evaporated organic material is chemically inert at a temperature of up to 650 ° C. 如申請專利範圍第11項所述之分佈管,其中該噴嘴(712)之該開孔(713)的內側係塗佈有該材料,該材料對該已蒸發有機材料係為化學惰性。The distribution pipe according to item 11 of the scope of the patent application, wherein the inside of the opening (713) of the nozzle (712) is coated with the material, and the material is chemically inert to the evaporated organic material. 如申請專利範圍第11至13項之任一項所述之分佈管,其中對該已蒸發有機材料為化學惰性之該材料係選自由不鏽鋼、石英玻璃、鈦、鉭、鈮、及類鑽塗層(DLC)所組成的群組。The distribution pipe according to any one of claims 11 to 13, wherein the material which is chemically inert to the evaporated organic material is selected from the group consisting of stainless steel, quartz glass, titanium, tantalum, niobium, and diamond-like coatings. A group of layers (DLCs). 一種材料沈積配置(100),用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上,該材料沈積配置包括:一第一材料源(100a),包括:一第一材料蒸發器(102a),裝配以用於蒸發將沈積於該基板(121)上之一第一材料;以及為該材料沈積配置(100)的一第一分佈管(106a)之如申請專利範圍第11至14項之任一項所述之分佈管(106a,106b,106c),其中該第一分佈管(106a)係流體連通於該第一材料蒸發器(102a);以及一第二材料源(100b),包括:一第二材料蒸發器(102b),裝配以用於蒸發將沈積於該基板(121)上的一第二材料;以及一第二分佈管(106b),包括一分佈管殼體(116),其中該第二分佈管(106b)係流體連通於該第二材料蒸發器(102b);以及複數個第二噴嘴(712),位於該第二分佈管殼體(116)中;其中該第一分佈管(106a)之該噴嘴與該第二分佈管(106b)之該些第二噴嘴之一第二噴嘴之間的一距離(200)係等同於或少於30mm;或者其中該第一分佈管(106a)之該噴嘴(712)係裝配以提供一第一分佈方向(210)且該第二分佈管(106b)之該些第二噴嘴之一第二噴嘴(712)係裝配以提供一第二分佈方向(211),其中該第一分佈方向(210)與該第二分佈方向(211)係彼此平行排列或係從平行排列偏差高達5°排列。A material deposition configuration (100) is used to deposit an evaporated material on a substrate (121) in a vacuum chamber (110). The material deposition configuration includes: a first material source (100a), including: a first A material evaporator (102a) assembled for evaporating a first material to be deposited on the substrate (121); and a patent application for a first distribution tube (106a) configured for the material deposition (100) The distribution pipe (106a, 106b, 106c) according to any one of items 11 to 14, wherein the first distribution pipe (106a) is in fluid communication with the first material evaporator (102a); and a second The material source (100b) includes: a second material evaporator (102b), configured to evaporate a second material to be deposited on the substrate (121); and a second distribution pipe (106b), including a A distribution pipe housing (116), wherein the second distribution pipe (106b) is in fluid communication with the second material evaporator (102b); and a plurality of second nozzles (712) located in the second distribution pipe housing ( 116); wherein a distance between the nozzle of the first distribution pipe (106a) and one of the second nozzles of the second distribution pipe (106b) (200) is equal to or less than 30mm; or wherein the nozzle (712) of the first distribution pipe (106a) is assembled to provide a first distribution direction (210) and the second distribution pipe (106b) of the One of the second nozzles (712) is assembled to provide a second distribution direction (211), wherein the first distribution direction (210) and the second distribution direction (211) are arranged parallel to each other or from The parallel arrangement has a deviation of up to 5 °. 如申請專利範圍第1、2、6、7、8及15項之任一項所述之材料沈積配置,其中該長度對尺寸比係無維度(dimensionless)。The material deposition configuration according to any one of the claims 1, 2, 6, 7, 8 and 15, wherein the length-to-size ratio is dimensionless. 如申請專利範圍第1、2、6、7、8及15項之任一項所述之材料沈積配置,其中該噴嘴(712)之該開孔尺寸(716)係由該開孔之剖面的最小尺寸定義。According to the material deposition configuration described in any one of claims 1, 2, 6, 7, 8, and 15, wherein the opening size (716) of the nozzle (712) is determined by the cross-section of the opening Definition of minimum size. 如申請專利範圍第1、2、6、7、8及15項之任一項所述之材料沈積配置,其中該第一材料源(100a)之該第一分佈管(106a)與該第二材料源(100b)之該第二分佈管(106b)之至少一者係為用於一已蒸發有機材料的一分佈管。The material deposition configuration according to any one of claims 1, 2, 6, 7, 8 and 15, wherein the first distribution tube (106a) and the second material source (100a) of the first material source (100a) At least one of the second distribution pipes (106b) of the material source (100b) is a distribution pipe for an evaporated organic material. 如申請專利範圍第1、2、6、7、8及15項之任一項所述之材料沈積配置,其中具有至少2:1之該長度對尺寸比的該噴嘴(712)係形成一已蒸發有機材料的一cos6形蒸汽羽狀物。The material deposition arrangement according to any one of the claims 1, 2, 6, 7, 8 and 15, wherein the nozzle (712) having the length-to-size ratio of at least 2: 1 forms a A cos 6 -shaped steam plume that evaporates organic material. 一種真空沈積腔室(110),包括:如前述申請專利範圍之任一項的一材料沈積配置(100);以及一基板支座(126),用以在沈積期間支撐該基板(121);其中該材料沈積配置(100)之該些分佈管(106a,106b,106c)之至少一者與該基板支座(126)之間的距離係少於250mm。A vacuum deposition chamber (110) includes: a material deposition configuration (100) according to any one of the aforementioned patent application scopes; and a substrate support (126) for supporting the substrate (121) during deposition; The distance between at least one of the distribution pipes (106a, 106b, 106c) of the material deposition arrangement (100) and the substrate support (126) is less than 250 mm. 如申請專利範圍第20項所述之真空沈積腔室,更包括一像素遮罩(132),位於該基板支座(126)與該材料沈積配置(100)之間。The vacuum deposition chamber according to item 20 of the patent application scope further includes a pixel mask (132) located between the substrate support (126) and the material deposition configuration (100). 如申請專利範圍第21項所述之真空沈積腔室,其中該像素遮罩(132)包括複數個像素開孔,該些像素開孔具有50μm x 50μm或以下之一尺寸。The vacuum deposition chamber according to item 21 of the patent application scope, wherein the pixel mask (132) includes a plurality of pixel openings, and the pixel openings have a size of 50 μm x 50 μm or less. 如申請專利範圍第20至22項之任一項所述之真空沈積腔室,其中該材料沈積配置(100)係於該真空沈積腔室(110)中可移動的。The vacuum deposition chamber according to any one of claims 20 to 22, wherein the material deposition configuration (100) is movable in the vacuum deposition chamber (110). 一種用以於一真空沈積腔室(110)中沈積一已蒸發材料於一基板(121)上的方法,該真空沈積腔室具有一腔室空間,該方法包括:利用配置於該腔室空間中之一第一材料蒸發器(102a)蒸發一第一材料;提供已蒸發之該第一材料至一第一分佈管(106a),該第一分佈管包括一第一分佈管殼體(116),其中該第一分佈管(106a)係流體連通於該第一材料蒸發器(102a),其中提供該已蒸發第一材料至該第一分佈管包括在該第一分佈管(106a)中提供約10-2-10-1mbar之一壓力;導引該已蒸發第一材料通過在該第一分佈管殼體(116)中之複數個第一噴嘴(712)的一或多個噴嘴,其中該些第一噴嘴之該一或多個噴嘴包括一開孔長度(714)及一開孔尺寸(716),其中導引該已蒸發第一材料通過該一或多個噴嘴(712)包括導引該已蒸發第一材料通過具有等同於或大於2:1之長度對尺寸比的該一或多個噴嘴;以及朝向在該腔室空間中之該基板(121)釋放該已蒸發第一材料至該腔室容積,其中該腔室空間提供約10-5至10-7mbar之一壓力。A method for depositing an evaporated material on a substrate (121) in a vacuum deposition chamber (110). The vacuum deposition chamber has a chamber space, and the method includes: using the space disposed in the chamber space. One of the first material evaporators (102a) evaporates a first material; providing the evaporated first material to a first distribution tube (106a), the first distribution tube including a first distribution tube housing (116) ), Wherein the first distribution pipe (106a) is in fluid communication with the first material evaporator (102a), and providing the evaporated first material to the first distribution pipe is included in the first distribution pipe (106a) Provide a pressure of about 10 -2 -10 -1 mbar; direct the evaporated first material through one or more nozzles of the plurality of first nozzles (712) in the first distribution tube housing (116) Wherein the one or more nozzles of the first nozzles include an opening length (714) and an opening size (716), wherein the evaporated first material is guided through the one or more nozzles (712) Including directing the evaporated first material through the one or more nozzles having a length-to-size ratio equal to or greater than 2: 1; And the orientation space in the chamber of the substrate (121) to release the vaporized material to the chamber a first volume, wherein one of the chamber space to provide a pressure of about 10-5 mbar to 10-7. 如申請專利範圍第24項所述之方法,更包括:利用於該腔室空間中的一第二材料蒸發器(102b)蒸發一第二材料;提供已蒸發之該第二材料至一第二分佈管(106b),該第二分佈管包括一第二分佈管殼體(116),其中該第二分佈管(106b)係流體連通於該第二材料蒸發器(102b),其中提供該已蒸發第二材料至該第二分佈管包括在該第二分佈管中提供約10-2-10-1mbar之一壓力;以及導引該已蒸發第二材料通過在該第二分佈管殼體(116)中之複數個第二噴嘴(712)的一或多個噴嘴;其中該已蒸發第一材料及該已蒸發第二材料係在少於30mm之一距離中分別導引通過該第一分佈管(106a)之該一或多個第一噴嘴及該第二分佈管(106b)之該一或多個第二噴嘴;及/或其中該已蒸發第一材料係從在一第一分佈方向(210)中之該第一分佈管(106a)之該一或多個第一噴嘴釋放,該第一分佈方向係平行於該第二分佈管(106b)之該一或多個第二噴嘴之一第二分佈方向(211),或從平行排列偏差高達5°;及/或其中該第一分佈管(106a)與該第二分佈管(106b)之至少一者的該一或多個噴嘴包括一材料,該材料對該已蒸發材料係為化學惰性。The method according to item 24 of the scope of patent application, further comprising: using a second material evaporator (102b) in the chamber space to evaporate a second material; providing the evaporated second material to a second material A distribution pipe (106b), the second distribution pipe includes a second distribution pipe housing (116), wherein the second distribution pipe (106b) is in fluid communication with the second material evaporator (102b), wherein the Evaporating the second material to the second distribution pipe includes providing a pressure of about 10 -2 -10 -1 mbar in the second distribution pipe; and directing the evaporated second material through the second distribution pipe housing (116) One or more nozzles of the plurality of second nozzles (712); wherein the evaporated first material and the evaporated second material are respectively guided through the first at a distance of less than 30 mm The one or more first nozzles of the distribution pipe (106a) and the one or more second nozzles of the second distribution pipe (106b); and / or wherein the evaporated first material is from a first distribution The one or more first nozzles of the first distribution pipe (106a) in the direction (210) are released, and the first distribution direction is parallel to the One of the one or more second nozzles of the two distribution pipes (106b), the second distribution direction (211), or a deviation of up to 5 ° from a parallel arrangement; and / or wherein the first distribution pipe (106a) and the second The one or more nozzles of at least one of the distribution tubes (106b) include a material that is chemically inert to the evaporated material.
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