TWI625876B - Linear distribution pipe, a material deposition arrangement and a vacuum deposition apparatus using the same, and a method therefor - Google Patents

Linear distribution pipe, a material deposition arrangement and a vacuum deposition apparatus using the same, and a method therefor Download PDF

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TWI625876B
TWI625876B TW104136577A TW104136577A TWI625876B TW I625876 B TWI625876 B TW I625876B TW 104136577 A TW104136577 A TW 104136577A TW 104136577 A TW104136577 A TW 104136577A TW I625876 B TWI625876 B TW I625876B
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distribution tube
nozzle
nozzles
substrate
linear
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TW104136577A
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Chinese (zh)
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TW201630226A (en
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史丹分 班格特
佑維 史奇伯勒
安德率斯 露博
喬斯曼紐 地古坎柏
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應用材料股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks

Abstract

一種用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上之線性分佈管(106)係說明。線性分佈管(106)包括一分佈管殼體(116),沿著一第一方向(136)延伸,其中第一方向係提供線性分佈管之線性延伸,且其中分佈管殼體包括一第一殼體材料。線性分佈管(106)更包括數個開孔,位於分佈管殼體(116)中,其中此些開孔沿著線性分佈管之線性延伸係為分散式的。再者,線性分佈管包括數個噴嘴(712),用於線性分佈管(106),其中此些噴嘴(712)係裝配以用於導引真空腔室(110)中的已蒸發材料。此些噴嘴(712)包括一第一噴嘴材料,具有大於第一殼體材料及/或大於21W/mk的一熱傳導率。 A linear distribution tube (106) for depositing evaporated material onto a substrate (121) in a vacuum chamber (110). The linear distribution tube (106) includes a distribution tube housing (116) extending along a first direction (136), wherein the first direction provides a linear extension of the linear distribution tube, and wherein the distribution tube housing includes a first Housing material. The linear distribution tube (106) further includes a plurality of openings in the distribution tube housing (116), wherein the openings are distributed along a linear extension of the linear distribution tube. Further, the linear distribution tube includes a plurality of nozzles (712) for linearly distributing the tubes (106), wherein the nozzles (712) are assembled for guiding the evaporated material in the vacuum chamber (110). The nozzles (712) include a first nozzle material having a thermal conductivity greater than the first housing material and/or greater than 21 W/mk.

Description

線性分佈管及使用其之材料沈積配置與真空沈積設備及提 供材料沈積配置之方法 Linear distribution tube and material deposition configuration and vacuum deposition apparatus using the same Method for material deposition configuration

數個實施例是有關於一種材料沈積配置、一種具有一材料沈積配置之沈積設備、以及一種用以提供用於一材料沈積配置之一分佈管的方法。數個實施例特別是有關於一種用於一真空沈積腔室之材料沈積配置、一種具有一材料沈積配置之真空沈積設備、及一種用以提供用於在一真空沈積腔室中之一材料沈積配置之一分佈管的方法,特別是一種材料源、一種沈積設備、及一種用於一蒸發製程之方法。 Several embodiments are directed to a material deposition configuration, a deposition apparatus having a material deposition configuration, and a method for providing a distribution tube for use in a material deposition configuration. A number of embodiments are particularly directed to a material deposition configuration for a vacuum deposition chamber, a vacuum deposition apparatus having a material deposition configuration, and a material deposition for providing a material in a vacuum deposition chamber. A method of distributing a tube, in particular a material source, a deposition apparatus, and a method for an evaporation process.

有機蒸發器係為用於生產有機發光二極體(organic light-emitting diodes,OLED)之器械。OLEDs係為發光二極體之一種特別形式,在OLEDs中,發光層包括特定之有機化合物之薄膜。OLEDs係使用於製造用於顯示資訊之電視螢幕、電腦螢幕、手機、其他手持裝置等。OLEDs可亦使用來做為一般空間的照 明。OLED顯示器可能的顏色、亮度、及視角之範圍係較傳統之液晶顯示器(LCD)大,因為OLED像素係直接地發出光線而不使用背光。因此,OLED顯示器之能量損耗係大量少於傳統之液晶顯示器的能量損耗。再者,OLEDs可製造於撓性基板上係產生更多之應用。典型之OLED顯示器舉例可包括位於兩個電極之間的數個有機材料層,此些有機材料層全部係沈積於一基板上,以形成具有個別可供能像素之一矩陣顯示面板。OLED一般係置於兩個玻璃面板之間,且玻璃面板之邊緣係密封以封裝OLED於其中。 The organic vaporizer is a device for producing organic light-emitting diodes (OLEDs). OLEDs are a special form of light-emitting diodes in which the light-emitting layer comprises a film of a specific organic compound. OLEDs are used in the manufacture of television screens, computer screens, cell phones, other handheld devices, etc. for displaying information. OLEDs can also be used as a general space photo Bright. OLED displays may have a larger range of colors, brightness, and viewing angles than conventional liquid crystal displays (LCDs) because OLED pixels emit light directly without the use of backlights. Therefore, the energy loss of the OLED display is much less than the energy loss of the conventional liquid crystal display. Furthermore, OLEDs can be fabricated on flexible substrates to create more applications. A typical OLED display example can include a plurality of layers of organic material between two electrodes, all of which are deposited on a substrate to form a matrix display panel having individual energized pixels. The OLED is typically placed between two glass panels, and the edges of the glass panel are sealed to encapsulate the OLED therein.

製造此種顯示裝置係面臨許多挑戰。OLED顯示器或OLED發光應用包括由數個有機材料形成之堆疊,此些有機材料例如是在真空中蒸發。有機材料係經由遮罩(shadow masks)以接續之方式沈積。為了以高效率製造OLED堆疊,共沈積(co-deposition)或共蒸發(co-evaporation)兩個或多個材料成為混合/摻雜層係有需要的,兩個或多個材料舉例為主體(host)及摻雜劑。再者,許多用以蒸發非常靈敏之有機材料的處理條件係必須考慮。 Manufacturing such display devices faces many challenges. OLED displays or OLED lighting applications include stacks formed from a number of organic materials, such as evaporating in a vacuum. The organic materials are deposited in a continuous manner via shadow masks. In order to manufacture an OLED stack with high efficiency, it is desirable to co-deposition or co-evaporate two or more materials into a mixed/doped layer, two or more materials being exemplified as the main body ( Host) and dopant. Furthermore, many processing conditions for evaporating very sensitive organic materials must be considered.

為了沈積材料於基板上,材料係加熱直到材料蒸發。再者,舉例來說,為了保持已蒸發材料於一控制溫度或避免已蒸發材料於管中凝結,導引材料至基板的管可進行加熱。用於管之加熱元件可提供以圍繞管,且於一些系統中,蒸發器之已加熱裝置更提供有加熱遮罩物,用以減少熱損。然而,由於此種管具有複雜的幾何形狀,加熱元件及加熱遮罩物無法確保分佈管之 均勻溫度。 In order to deposit material on the substrate, the material is heated until the material evaporates. Further, for example, to maintain the vaporized material at a controlled temperature or to prevent condensation of the evaporated material in the tube, the tube guiding the material to the substrate can be heated. A heating element for the tube can be provided to surround the tube, and in some systems, the heated device of the evaporator is further provided with a heating mask to reduce heat loss. However, due to the complex geometry of such tubes, the heating element and the heating mask cannot ensure the distribution tube Uniform temperature.

有鑑於上述,此處所述實施例之一目的係提供一種材料沈積配置、一種具有一材料沈積配置之沈積設備、一種線性分佈管、及一種用以提供用於一材料沈積配置之一分佈管之方法來克服此領域中之至少一些問題。 In view of the foregoing, it is an object of the embodiments described herein to provide a material deposition arrangement, a deposition apparatus having a material deposition configuration, a linear distribution tube, and a distribution tube for providing a material deposition configuration. The method to overcome at least some of the problems in this field.

有鑑於上述,根據獨立申請專利範圍之材料沈積配 置、沈積設備、用於分佈管之噴嘴、及用以提供用於材料沈積配置之分佈管的方法係提供。數個實施例之其他方面、優點、及特徵係藉由附屬申請專利範圍、說明、及所附之圖式更為清楚。 In view of the above, the material deposition according to the scope of the independent patent application Means, deposition equipment, nozzles for distribution tubes, and methods for providing distribution tubes for material deposition configurations are provided. Other aspects, advantages, and features of the several embodiments are apparent from the scope of the appended claims, the description and the accompanying drawings.

根據一實施例,一種用以於一真空腔室中沈積已蒸發材料於一基板上之線性分佈管係提供。線性分佈管包括一分佈管殼體,沿著一第一方向延伸,其中第一方向係提供線性分佈管之線性延伸。分佈管殼體包括一第一殼體材料。線性分佈管更包括數個開孔,位於分佈管殼體中,其中此些開孔沿著線性分佈管之線性延伸係為分散式的。再者,線性分佈管包括數個噴嘴,用於線性分佈管,其中此些噴嘴係裝配以用於導引真空腔室中的已蒸發材料。此些噴嘴包括一第一噴嘴材料,具有大於第一殼體材料及/或大於21W/mk的一熱傳導率。 According to one embodiment, a linear distribution tube system for depositing evaporated material onto a substrate in a vacuum chamber is provided. The linear distribution tube includes a distribution tube housing extending along a first direction, wherein the first direction provides a linear extension of the linear distribution tube. The distribution tube housing includes a first housing material. The linear distribution tube further includes a plurality of openings in the distribution tube housing, wherein the openings are distributed along a linear extension of the linear distribution tube. Further, the linear distribution tube includes a plurality of nozzles for linearly distributing the tubes, wherein the nozzles are assembled for guiding the evaporated material in the vacuum chamber. The nozzles include a first nozzle material having a thermal conductivity greater than the first housing material and/or greater than 21 W/mk.

根據另一實施例,一種用以於一真空腔室中沈積一材料於一基板上之材料沈積配置係提供。材料沈積配置包括一蒸發源,用以提供將蒸發及將沈積之材料於基板上;一分佈管,流 體流通於蒸發源,蒸發源係提供已蒸發之材料於該分佈管。材料沈積配置更包括一噴嘴,用以於真空腔室中導引已蒸發材料。噴嘴包括一第一噴嘴材料,具有大於21W/mK之一熱傳導率。 In accordance with another embodiment, a material deposition arrangement for depositing a material on a substrate in a vacuum chamber is provided. The material deposition configuration includes an evaporation source for providing evaporation and deposition of the material on the substrate; a distribution tube, flow The body circulates in an evaporation source, and the evaporation source supplies the evaporated material to the distribution tube. The material deposition configuration further includes a nozzle for directing the vaporized material in the vacuum chamber. The nozzle includes a first nozzle material having a thermal conductivity greater than 21 W/mK.

根據其他實施例,一種真空沈積設備係提供。真空沈積設備包括一真空腔室;以及根據此處所述實施例之一材料沈積配置。蒸發源係為用於數個有機材料之一蒸發坩鍋。材料沈積配置之分佈管連接於蒸發坩鍋,分佈管用以從蒸發坩鍋導引已蒸發材料至真空腔室中。噴嘴包括一第二噴嘴材料,對已蒸發有機材料係為化學惰性。再者,材料沈積配置之噴嘴係排列以用於導引已蒸發材料朝向真空腔室中之一基板。 According to other embodiments, a vacuum deposition apparatus is provided. The vacuum deposition apparatus includes a vacuum chamber; and a material deposition configuration in accordance with one of the embodiments described herein. The evaporation source is an evaporation crucible for one of several organic materials. The distribution tube of the material deposition configuration is connected to the evaporation crucible, and the distribution tube is used to guide the evaporated material from the evaporation crucible into the vacuum chamber. The nozzle includes a second nozzle material that is chemically inert to the vaporized organic material. Further, the nozzles of the material deposition arrangement are arranged to direct the evaporated material toward one of the substrates in the vacuum chamber.

根據其他實施例,一種用以提供用於一真空沈積設備之一材料沈積配置的方法係提供。方法包括提供一蒸發源,用以蒸發將沈積於一基板上之材料;以及流體連通一分佈管及一噴嘴於蒸發源,以提供於蒸發源與分佈管及噴嘴之間的流體連通。 噴嘴包括一第一噴嘴材料,具有大於21W/mK之一熱傳導數值。 In accordance with other embodiments, a method for providing a material deposition configuration for a vacuum deposition apparatus is provided. The method includes providing an evaporation source for vaporizing a material to be deposited on a substrate; and fluidly connecting a distribution tube and a nozzle to the evaporation source to provide fluid communication between the evaporation source and the distribution tube and the nozzle. The nozzle includes a first nozzle material having a heat transfer value greater than 21 W/mK.

數個實施例係針對用於執行所揭露之方法之設備,且設備包括用於執行各所述之方法特徵的設備部件。此些方法特徵可藉由硬體元件、由適合軟體程式化之電腦、由此兩者之任何結合或任何其他方式執行。再者,數個實施例亦針對操作所述之設備的方法。其包括用於執行設備之每一功能的方法特徵。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: Several embodiments are directed to apparatus for performing the disclosed methods, and apparatus includes apparatus components for performing the various described method features. Such method features may be performed by hardware components, by a computer suitable for software, or by any combination of the two, or by any other means. Moreover, several embodiments are also directed to methods of operating the described devices. It includes method features for performing each function of the device. In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

100‧‧‧材料沈積配置 100‧‧‧Material deposition configuration

102‧‧‧支座 102‧‧‧Support

104‧‧‧蒸發坩鍋 104‧‧‧Evaporation crucible

106‧‧‧分佈管 106‧‧‧Distribution tube

107‧‧‧開孔 107‧‧‧Opening

108‧‧‧延伸牆 108‧‧‧Extended wall

109‧‧‧牆 109‧‧‧ wall

110‧‧‧真空腔室 110‧‧‧vacuum chamber

112‧‧‧對準單元 112‧‧‧Alignment unit

116‧‧‧分佈管殼體 116‧‧‧Distribution tube shell

121‧‧‧基板 121‧‧‧Substrate

126‧‧‧基板支座 126‧‧‧Substrate support

131‧‧‧遮罩框架 131‧‧‧mask frame

132‧‧‧遮罩 132‧‧‧ mask

136‧‧‧第一方向 136‧‧‧First direction

200、712‧‧‧噴嘴 200, 712‧‧‧ nozzle

201‧‧‧導引部分 201‧‧‧Guide section

202‧‧‧連接部分 202‧‧‧Connected section

203‧‧‧通道 203‧‧‧ channel

205、207‧‧‧閥 205, 207‧‧‧ valve

206‧‧‧第一噴嘴材料 206‧‧‧First nozzle material

208‧‧‧第二噴嘴材料 208‧‧‧second nozzle material

210‧‧‧維護真空腔室 210‧‧‧Maintenance vacuum chamber

300‧‧‧沈積設備 300‧‧‧Deposition equipment

320‧‧‧線性導件 320‧‧‧Linear Guides

400‧‧‧方法 400‧‧‧ method

410、420‧‧‧方塊 410, 420‧‧‧ squares

703‧‧‧凸緣單元 703‧‧‧Flange unit

710‧‧‧內部中空空間 710‧‧‧Internal hollow space

715‧‧‧加熱單元 715‧‧‧heating unit

717‧‧‧加熱遮蔽件 717‧‧‧heating cover

722‧‧‧栓 722‧‧‧ bolt

725‧‧‧外部加熱單元 725‧‧‧External heating unit

726‧‧‧中央加熱元件 726‧‧‧Central heating element

727‧‧‧遮罩物 727‧‧‧ hood

732‧‧‧蒸汽導管 732‧‧‧ steam conduit

為了可詳細地了解此處所述實施例之上述特徵,簡要摘錄於上之更特有的說明可參照實施例。所附之圖式係有關於數個實施例且說明於下方:第1a至1c圖繪示根據此處所述實施例之材料沈積配置的示意圖;第2a至2d圖繪示根據此處所述實施例之用於分佈管之噴嘴的示意圖;第3a及3b圖繪示根據此處所述實施例之用於材料沈積配置之分佈管的示意、剖面圖;第4圖繪示根據此處所述實施例之具有材料沈積配置之沈積設備的示意圖;以及第5圖繪示根據此處所述實施例之用以提供用於材料沈積配置之分佈管的方法之流程圖。 In order to be able to understand the above-described features of the embodiments described herein in detail, the detailed description of The accompanying drawings are directed to a number of embodiments and are described below: Figures 1a through 1c illustrate schematic views of material deposition configurations in accordance with embodiments described herein; Figures 2a through 2d illustrate A schematic view of a nozzle for a distribution tube of an embodiment; FIGS. 3a and 3b are schematic and cross-sectional views of a distribution tube for a material deposition configuration according to embodiments described herein; FIG. 4 is a diagram A schematic diagram of a deposition apparatus having a material deposition configuration of the embodiments; and FIG. 5 is a flow chart of a method for providing a distribution tube for a material deposition configuration in accordance with embodiments described herein.

詳細的參照將以各種實施例來達成,實施例的一或多個例子係繪示在圖式中。在下方圖式之說明中,相同參考編號係意指相同元件。一般來說,僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明的方式提供且不意味為一限制。再者,所說明或敘述而做為一實施例之部分之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。 The detailed description is to be considered in various embodiments, and one or more examples of the embodiments are illustrated in the drawings. In the description of the following figures, the same reference numerals are intended to refer to the same elements. In general, only the differences between the individual embodiments are described. The examples are provided by way of illustration and are not meant as a limitation. Furthermore, the features illustrated or described as part of one embodiment can be used in other embodiments or in combination with other embodiments to achieve further embodiments. This means that the description includes such adjustments and changes.

如此處所使用,名稱「流體連通(fluid communication)」可理解為流體連通的兩個元件可經由一連接件交換流體,以讓流體於此兩個元件之間流動。於一例子中,為流體連通之此些元件可包括中空結構,流體可流動通過中空結構。 根據一些實施例,為流體連通之此些元件的至少一者可為類管元件。 As used herein, the name "fluid communication (fluid "Communication" is understood to mean that two elements in fluid communication can exchange fluid via a connection to allow fluid to flow between the two elements. In one example, such elements that are in fluid communication can include a hollow structure through which fluid can flow. According to some embodiments, at least one of such elements that are in fluid communication may be a tube-like element.

再者,在下方說明中,一材料源可理解為提供將沈積於一基板上之一源。特別是,材料源可裝配以用於在真空腔室中提供將沈積於一基板上之材料,真空腔室例如是真空沈積腔室或設備。根據一些實施例,材料源可藉由裝配以蒸發將沈積之材料來提供將沈積於基板上之材料。舉例來說,材料源可包括蒸發源,蒸發源例如是蒸發器或坩鍋,蒸發源蒸發將沈積於基板上之材料,且特別是於一方向中釋放已蒸發材料,此方向係朝向基板或進入材料源之分佈管中。於一些實施例中,蒸發器可流體連通於分佈管,以舉例為用以分佈已蒸發材料。 Furthermore, in the following description, a source of material is understood to provide a source that will be deposited on a substrate. In particular, the source of material can be assembled for providing material to be deposited on a substrate in a vacuum chamber, such as a vacuum deposition chamber or apparatus. According to some embodiments, the source of material may provide a material to be deposited on the substrate by assembling to evaporate the material to be deposited. For example, the source of material may comprise an evaporation source, such as an evaporator or a crucible, the evaporation source evaporating the material deposited on the substrate, and in particular releasing the evaporated material in one direction, the direction being toward the substrate or Enter the distribution tube of the material source. In some embodiments, the evaporator may be in fluid communication with the distribution tube, for example to distribute the vaporized material.

根據此處所述一些實施例,分佈管可理解為用以導引及分佈已蒸發材料之一管。特別是,分佈管可從蒸發器導引已蒸發材料至分佈管中之出口或開孔。線性分佈管可理解為於第一,特別是縱向方向中延伸之一管。於一些實施例中,線性分佈管包括具有圓柱形狀之管,且其中圓柱可具有圓形底部形狀或任何其他適合的底部形狀。 According to some embodiments described herein, a distribution tube can be understood as a tube for guiding and distributing one of the evaporated materials. In particular, the distribution tube can direct the evaporated material from the evaporator to the outlet or opening in the distribution tube. A linear distribution tube can be understood as a tube extending first, in particular in the longitudinal direction. In some embodiments, the linear distribution tube comprises a tube having a cylindrical shape, and wherein the cylinder can have a circular bottom shape or any other suitable bottom shape.

此處所指的噴嘴可理解為用以導引一流體的一裝置,特別是用以控制一流體之方向或特性(例如是從噴嘴出現之 流體之流速、速度、形狀、及/或壓力)。根據此處所述一些實施例,噴嘴可為用以導引或指引蒸汽之一裝置,蒸汽例如是將沈積於基板上之已蒸發材料的蒸汽。噴嘴可具有用以接收一流體之入口、用以導引流體通過噴嘴之開孔(舉例為鑽孔(bore)或通道)、及用以釋放流體之出口。一般來說,噴嘴之開孔或通道可包括定義之幾何形狀,用以讓流動通過噴嘴之流體達成所定義之方向或特性。根據一些實施,噴嘴可為分佈管之部分或可連接於提供已蒸發材料之分佈管且可從分佈管接收已蒸發材料。 A nozzle as referred to herein is understood to mean a device for guiding a fluid, in particular for controlling the direction or characteristics of a fluid (for example, from a nozzle). Flow rate, velocity, shape, and/or pressure of the fluid). According to some embodiments described herein, the nozzle may be one of means for directing or directing steam, such as steam of evaporated material to be deposited on the substrate. The nozzle may have an inlet for receiving a fluid, an opening for guiding fluid through the nozzle (for example, a bore or a passage), and an outlet for releasing the fluid. In general, the opening or passage of the nozzle may include a defined geometry for the fluid flowing through the nozzle to achieve a defined direction or characteristic. According to some implementations, the nozzle can be part of a distribution tube or can be connected to a distribution tube that provides evaporated material and can receive evaporated material from the distribution tube.

第1a至1c圖繪示根據此處所述實施例之材料沈積配置100之示意圖。材料源可包括分佈管106及蒸發源或坩鍋104來做為蒸發器,如第1a圖中所示。分佈管106可流體連通於坩鍋,用以分佈已蒸發材料,已蒸發材料係由蒸發坩鍋104提供。分佈管可例如是具有加熱單元715之延長的立方體。蒸發坩鍋可為水庫(reservoir),用於利用外部加熱單元725之將蒸發的有機材料。 根據可與此處所述其他實施例結合之典型實施例,分佈管106提供接線源。分佈管與坩鍋之其他細節將更詳細說明於下。根據此處所述一些實施例,材料沈積配置100更包括數個噴嘴,用以朝向基板釋放已蒸發材料,例如是沿著至少一接線排列之噴嘴。 1a through 1c illustrate schematic views of a material deposition configuration 100 in accordance with embodiments described herein. The material source may include a distribution tube 106 and an evaporation source or crucible 104 as an evaporator, as shown in Figure 1a. The distribution tube 106 can be in fluid communication with the crucible for distributing the evaporated material, which is provided by the evaporation crucible 104. The distribution tube can for example be an elongated cube with a heating unit 715. The evaporation crucible can be a reservoir for utilizing the organic material to be evaporated by the external heating unit 725. According to an exemplary embodiment that can be combined with other embodiments described herein, the distribution tube 106 provides a source of wiring. Additional details of the distribution tube and crucible will be described in more detail below. According to some embodiments described herein, the material deposition configuration 100 further includes a plurality of nozzles for releasing evaporated material toward the substrate, such as nozzles arranged along at least one of the wires.

根據此處所述實施例,用於在真空腔室中沈積已蒸發材料於基板上之線性分佈管係提供。線性分佈管包括分佈管殼體,沿著第一方向延伸,其中第一方向係提供線性分佈管之線性延伸。一般來說,分佈管殼體包括第一殼體材料。線性分佈管更 包括數個開孔,此些開孔位於分佈管殼體中,其中此些開孔沿著線性分佈管之線性延伸係為分散式的。根據此處所述實施例,線性分佈管更包括數個噴嘴,用於線性分佈管。此些噴嘴係裝配以用於導引在真空腔室中的已蒸發材料,且此些噴嘴包括第一噴嘴材料,第一噴嘴材料具有大於第一殼體材料及/或大於21W/mK之熱傳導率。 According to embodiments described herein, a linear distribution conduit for depositing evaporated material onto a substrate in a vacuum chamber is provided. The linear distribution tube includes a distribution tube housing extending along a first direction, wherein the first direction provides a linear extension of the linear distribution tube. Generally, the distribution tube housing includes a first housing material. Linear distribution tube A plurality of apertures are included, the apertures being located in the distribution tube housing, wherein the apertures are distributed along a linear extension of the linear distribution tube. According to embodiments described herein, the linear distribution tube further includes a plurality of nozzles for linearly distributing the tubes. The nozzles are assembled for guiding the vaporized material in the vacuum chamber, and the nozzles comprise a first nozzle material having a heat transfer greater than the first shell material and/or greater than 21 W/mK rate.

在分佈管之一例子中,噴嘴包括銅(Cu)、鉭(Ta)、鈮(Nb)、類鑽塗層(DLC)、及石墨之至少一種材料。根據一些實施例,噴嘴包括對已蒸發有機材料係為化學惰性之材料。於一些實施例中,對已蒸發材料為化學惰性之材料可表示為第二噴嘴材料。特別是,在蒸發製程期間,與已蒸發有機材料接觸之噴嘴之表面可塗佈有對已蒸發有機材料係為化學惰性之一材料,此材料特別是具有高於21W/mK之熱傳導數值,與已蒸發有機材料接觸之噴嘴之表面例如是噴嘴開孔或通道之內側。於一例子中,噴嘴包括銅且提供在噴嘴開孔或通道之內側上之一材料塗層,材料塗層例如是鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)、不鏽鋼、石英玻璃或石墨。 In one example of a distribution tube, the nozzle comprises at least one of copper (Cu), tantalum (Ta), niobium (Nb), diamond-like coating (DLC), and graphite. According to some embodiments, the nozzle comprises a material that is chemically inert to the evaporated organic material. In some embodiments, a material that is chemically inert to the evaporated material can be represented as a second nozzle material. In particular, during the evaporation process, the surface of the nozzle in contact with the evaporated organic material may be coated with a material that is chemically inert to the evaporated organic material, particularly having a thermal conductivity value greater than 21 W/mK, and The surface of the nozzle where the evaporated organic material contacts is, for example, the inside of the nozzle opening or the passage. In one example, the nozzle includes copper and is provided with a coating of material on the inside of the nozzle opening or channel, such as tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating ( DLC), stainless steel, quartz glass or graphite.

於已知系統中,分佈管係加熱,使得已蒸發材料係保持於固定且已定義之溫度。然而,噴嘴為在分佈管殼體及沈積腔室間的介面,噴嘴係面臨溫度差異,特別是因為噴嘴不可加熱或不可完全地以加熱器覆蓋。噴嘴可視為在已蒸發材料之流動路徑中提供降溫。由噴嘴所提供之降溫可能不利地影響已蒸發材料 之均勻與已塗佈之基板的品質。 In known systems, the distribution tube is heated such that the evaporated material is maintained at a fixed and defined temperature. However, the nozzle is the interface between the distribution tube housing and the deposition chamber, and the nozzle system is subject to temperature differences, particularly since the nozzle is not heated or may not be completely covered by the heater. The nozzle can be viewed as providing a cooling in the flow path of the vaporized material. The cooling provided by the nozzle may adversely affect the evaporated material Uniform and the quality of the coated substrate.

根據此處所述之一些實施例,包括具有高於分佈管殼體之熱傳導率或高於21W/mK之熱傳導率之噴嘴可至少在噴嘴不主動加熱之區域中補償熱損。噴嘴的已改善之熱傳導率係有助於調整噴嘴之溫度至蒸發製程中的各自溫度狀態。舉例來說,根據此處所述實施例之噴嘴的溫度反應可能能夠快於在蒸發製程之溫度狀態中的改變。於一例子中,噴嘴可藉由主動加熱分佈管來加熱至一溫度,而有助於保持已蒸發材料之蒸發溫度,噴嘴係連接於分佈管或為分佈管之部分。藉由增加之熱傳導率,分佈管之溫度係更容易且快速導向且應用於噴嘴。於另一例子中,在需要避免已蒸發材料過熱的情況中,如果從分佈管至噴嘴之溫度輸入終止時,噴嘴之溫度將更快速的減少。噴嘴可冷卻且確保已蒸發材料之合適溫度。 According to some embodiments described herein, a nozzle comprising a thermal conductivity higher than the thermal conductivity of the distribution tube housing or higher than 21 W/mK can compensate for heat loss at least in regions where the nozzle is not actively heated. The improved thermal conductivity of the nozzle helps to adjust the temperature of the nozzle to the respective temperature state in the evaporation process. For example, the temperature response of a nozzle according to embodiments described herein may be faster than a change in the temperature state of the evaporation process. In one example, the nozzle can be heated to a temperature by actively heating the distribution tube to help maintain the evaporation temperature of the evaporated material, and the nozzle is attached to the distribution tube or is part of the distribution tube. By increasing the thermal conductivity, the temperature of the distribution tube is easier and faster to guide and is applied to the nozzle. In another example, where it is desired to avoid overheating of the evaporated material, if the temperature input from the distribution tube to the nozzle is terminated, the temperature of the nozzle will decrease more rapidly. The nozzle can be cooled and ensure a suitable temperature for the material that has evaporated.

第2a至2d圖繪示根據此處所述實施例之噴嘴的數個實施例。根據此處所述實施例,噴嘴可包括導引部分,導引部分導引已蒸發材料至將塗佈之基板。導引部分可例如是形成且設計,使得從噴嘴釋放之蒸汽羽狀物(plume)係形成已定義之形狀與強度。第2a至2d圖中係繪示根據此處所述實施例之噴嘴200的示意圖。噴嘴200包括導引部分201及連接部分202,連接部分202用以連接噴嘴於分佈管,例如是有關於第1a至1c圖所說明之分佈管。噴嘴200包括開孔203(或通道、或鑽孔),用以導引已蒸發材料通過噴嘴。根據一些實施例,噴嘴之開孔(特別是通道之 內側)可表示為噴嘴之導引部分。 Figures 2a through 2d illustrate several embodiments of nozzles in accordance with embodiments described herein. According to embodiments described herein, the nozzle can include a guide portion that directs the evaporated material to the substrate to be coated. The guiding portion can be formed, for example, and designed such that the vapor plume released from the nozzle forms a defined shape and strength. Figures 2a through 2d illustrate schematic views of a nozzle 200 in accordance with embodiments described herein. The nozzle 200 includes a guiding portion 201 and a connecting portion 202 for connecting the nozzle to the distribution tube, for example, the distribution tube described with respect to Figures 1a to 1c. The nozzle 200 includes an opening 203 (or channel, or bore) for directing vaporized material through the nozzle. According to some embodiments, the opening of the nozzle (especially the channel The inner side can be expressed as the guiding portion of the nozzle.

第2a圖繪示包括第一噴嘴材料206及第二噴嘴材料208之噴嘴的示意圖。舉例來說,第一噴嘴材料206可為具有大於21W/mK之熱傳導數值的材料,例如是銅。於一些實施例中,第二噴嘴材料208可提供在開孔或通道203之內側及可對已蒸發有機材料係為化學惰性。舉例來說,第二噴嘴材料可選自鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)、不鏽鋼、石英玻璃及石墨。如第2a圖中所示之實施例中可見,第二噴嘴材料208可提供作為在通道203之內側的薄塗層。 2a is a schematic view of a nozzle including a first nozzle material 206 and a second nozzle material 208. For example, the first nozzle material 206 can be a material having a thermal conductivity value greater than 21 W/mK, such as copper. In some embodiments, the second nozzle material 208 can be provided inside the opening or channel 203 and can be chemically inert to the vaporized organic material. For example, the second nozzle material can be selected from the group consisting of tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating (DLC), stainless steel, quartz glass, and graphite. As seen in the embodiment shown in Figure 2a, the second nozzle material 208 can be provided as a thin coating on the inside of the channel 203.

第2b圖繪示具有第一噴嘴材料206和第二噴嘴材料208之噴嘴的一實施例的示意圖。繪示在第2b圖中之噴嘴的例子係由第一部分和第二部分組成,第一部分係由第一噴嘴材料206(具有例如是大於21W/mK之熱傳導數值)製成,第二部分係由第二噴嘴材料208製成,第二噴嘴材料208可對已蒸發有機材料係為惰性。於一例子中,第一與第二噴嘴材料可如有關於第2a圖之說明選擇。如第2b圖中可見,第二噴嘴材料208係為噴嘴之一部分,且特別是不只是在內部通道側之塗層。 2b is a schematic diagram showing an embodiment of a nozzle having a first nozzle material 206 and a second nozzle material 208. The example of the nozzle illustrated in Figure 2b is comprised of a first portion and a second portion, the first portion being made of a first nozzle material 206 having a heat transfer value of, for example, greater than 21 W/mK, the second portion being The second nozzle material 208 is formed and the second nozzle material 208 can be inert to the vaporized organic material. In one example, the first and second nozzle materials can be selected as described with respect to Figure 2a. As can be seen in Figure 2b, the second nozzle material 208 is part of the nozzle and in particular not just the coating on the inner channel side.

根據一些實施例,第二噴嘴材料之厚度可代表性在一些奈米到數個微米之一範圍中。於一例子中,第二噴嘴材料在噴嘴開孔中之厚度可代表性在約10nm至約50μm之間,更代表性在約100nm至約50μm之間,且甚至更代表性在約500nm至約50μm之間。於一例子中,第二噴嘴材料之厚度可為約10μm。 According to some embodiments, the thickness of the second nozzle material may be representative in the range of some nanometers to several micrometers. In one example, the thickness of the second nozzle material in the nozzle opening can be representatively between about 10 nm and about 50 [mu]m, more typically between about 100 nm and about 50 [mu]m, and even more representatively between about 500 nm and about Between 50μm. In one example, the second nozzle material can have a thickness of about 10 [mu]m.

第2c圖繪示噴嘴200之一實施例的示意圖,其中噴嘴200係以第一噴嘴材料製成,第一噴嘴材料具有大於分佈管之熱傳導率的熱傳導率或高於21W/mK之熱傳導率,噴嘴可連接於分佈管。於一些實施例中,第一噴嘴材料206對已蒸發有機材料係為惰性。於一例子中,第一噴嘴材料可選自鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)或石墨。 2c is a schematic view showing an embodiment of the nozzle 200, wherein the nozzle 200 is made of a first nozzle material having a thermal conductivity greater than the thermal conductivity of the distribution tube or a thermal conductivity higher than 21 W/mK, The nozzle can be connected to the distribution tube. In some embodiments, the first nozzle material 206 is inert to the vaporized organic material. In one example, the first nozzle material can be selected from the group consisting of tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating (DLC), or graphite.

第2d圖繪示根據此處所述實施例之如第2a圖中所示之噴嘴的示意圖。在開孔203中可見第二噴嘴材料208,而噴嘴200之外側係顯示出第一噴嘴材料206。 Figure 2d is a schematic illustration of a nozzle as shown in Figure 2a in accordance with embodiments described herein. A second nozzle material 208 is visible in the opening 203, while the outer side of the nozzle 200 exhibits a first nozzle material 206.

根據此處所述一些實施例,噴嘴之開孔或通道可具有代表性約1mm至約10mm之尺寸、更代表性約1mm至約6mm之尺寸,且甚至更代表性2mm至約5mm之尺寸,已蒸發材料係在蒸發製程期間通過噴嘴之開孔或通道,以到達將塗佈之基板。根據一些實施例,通道或開孔之尺寸可意指剖面之最小尺寸,舉例為通道或開孔之直徑。於一實施例中,開孔或通道之尺寸係於噴嘴之出口進行量測。根據此處所述一些實施例,開孔或通道可於公差區域H7中製造,舉例為以具有約10μm至18μm之公差製造。 According to some embodiments described herein, the openings or channels of the nozzle may have a size ranging from about 1 mm to about 10 mm, more typically from about 1 mm to about 6 mm, and even more representatively from 2 mm to about 5 mm. The evaporated material is passed through an opening or passage of the nozzle during the evaporation process to reach the substrate to be coated. According to some embodiments, the size of the channel or opening may mean the smallest dimension of the section, for example the diameter of the channel or opening. In one embodiment, the size of the opening or passage is measured at the outlet of the nozzle. According to some embodiments described herein, the openings or channels may be fabricated in tolerance region H7, for example, to have a tolerance of between about 10 [mu]m and 18 [mu]m.

根據此處所述一些實施例,用於材料沈積配置之噴嘴可包括螺紋,用以重複地連接噴嘴於分佈管且解除噴嘴對分佈管之連接,材料沈積配置用以於真空沈積腔室中沈積材料於基板上。於一些實施例中,具有用以連接於分佈管之螺紋的噴嘴可具 有內螺紋及/或外螺紋,用以能夠反覆連接噴嘴於分佈管,特別是不需要損壞分佈管或噴嘴。舉例來說,具有已定義特性之第一噴嘴可連接於用以第一製程的分佈管。在第一製程完成之後,第一噴嘴可解除連接且第二噴嘴可連接於用以第二製程的分佈管。如果第一製程將再度執行,第二噴嘴可從分佈管解除連接且第一噴嘴可再度連接於分佈管,用以執行第一製程。根據一些實施例,分佈管可亦包括螺紋,用以噴嘴至分佈管之可交換連接,例如是藉由裝配(fitting)於噴嘴之螺紋的方式。 According to some embodiments described herein, the nozzle for the material deposition configuration may include threads for repeatedly connecting the nozzle to the distribution tube and uncoupling the nozzle to the distribution tube, the material deposition configuration for deposition in the vacuum deposition chamber The material is on the substrate. In some embodiments, a nozzle having a thread for attachment to a distribution tube can have There are internal threads and/or external threads for the ability to repeatedly connect the nozzles to the distribution tube, in particular without the need to damage the distribution tube or nozzle. For example, a first nozzle having a defined characteristic can be coupled to a distribution tube for the first process. After the first process is completed, the first nozzle can be disconnected and the second nozzle can be connected to the distribution tube for the second process. If the first process is to be performed again, the second nozzle can be disconnected from the distribution tube and the first nozzle can be reconnected to the distribution tube for performing the first process. According to some embodiments, the distribution tube may also include threads for the exchangeable connection of the nozzle to the distribution tube, such as by fitting the threads of the nozzle.

根據可與此處所述其他實施例結合之一些實施例,此處所指之噴嘴可設計以形成具有類似cosn形狀輪廓之羽狀物(plume),其中n特別是大於4。於一例子中,噴嘴係設計以形成具有類似cos6形狀輪廓之羽狀物。如果需要窄形狀之羽狀物時,達成cos6形式羽狀物之已蒸發材料的噴嘴可有用處。舉例來說,包括用於基板之具有小開孔(例如是具有約50μm或更少,例如是約20μm之尺寸的開孔)的遮罩之沈積製程從窄cos6形狀羽狀物可獲益,且既然已蒸發材料之羽狀物係不散佈在遮罩上而是通過遮罩之開孔,材料利用可增加。根據一些實施例,噴嘴可設計,使得噴嘴之長度及噴嘴之通道之直徑的關係係為已定義關係,例如是具有2:1之比或更高。根據額外或選擇性實施例,噴嘴之通道可包括段差(steps)、斜面、準直儀(collimator)結構及/或壓力級(pressure stages),用以達成所需之羽狀物形狀。 According to some embodiments, which may be combined with other embodiments described herein, the nozzles referred to herein may be designed to form a plume having a contour similar to the cos n shape, wherein n is particularly greater than four. In one example, the nozzle system is designed to form a plume having a contour similar to a cos 6 shape. A nozzle that achieves a vaporized material of the cos 6 form plume can be useful if a narrowly shaped plume is desired. For example, a deposition process including a mask for a substrate having a small opening (for example, an opening having a size of about 50 μm or less, for example, about 20 μm) can benefit from a narrow cos 6 shaped plume And since the plume of the evaporated material does not spread over the mask but through the opening of the mask, material utilization can be increased. According to some embodiments, the nozzle can be designed such that the relationship between the length of the nozzle and the diameter of the passage of the nozzle is a defined relationship, for example having a ratio of 2:1 or higher. According to additional or alternative embodiments, the passage of the nozzle may include steps, ramps, collimator structures, and/or pressure stages to achieve the desired plume shape.

第3a及3b圖繪示根據此處所述實施例之用於材料 沈積配置之分佈管106的實施例的剖面圖。根據一些實施例,分佈管106包括分佈管殼體116,分佈管殼體116包括第一分佈管殼體材料或以第一分佈管殼體材料製成。如第3a及3b圖中所示之實施例中可見,分佈管係為線性分佈管,沿著第一方向136延伸。 Figures 3a and 3b illustrate materials for use in accordance with embodiments described herein A cross-sectional view of an embodiment of a distribution tube 106 of a deposition configuration. According to some embodiments, the distribution tube 106 includes a distribution tube housing 116 that includes or is fabricated from a first distribution tube housing material. As can be seen in the embodiments shown in Figures 3a and 3b, the distribution tube is a linear distribution tube that extends along a first direction 136.

第3a圖繪示具有數個開孔107之分佈管的示意圖,此些開孔107係沿著分佈管殼體中之第一方向排列。於一些實施例中,在分佈管中之開孔的牆109可理解為根據此處所述實施例之噴嘴。舉例來說,此些開孔107的牆109可包括第一噴嘴材料(舉例為塗佈有第一噴嘴材料),其中第一噴嘴材料之熱傳導數值係大於第一分佈管材料之熱傳導率或大於21W/mK。於一例子中,此些開孔107之牆109可塗佈有銅。於一實施例中,牆可以銅及第二噴嘴材料覆蓋,第二噴嘴材料例如是對已蒸發有機材料為化學惰性。 Figure 3a shows a schematic view of a distribution tube having a plurality of openings 107 that are aligned along a first direction in the distribution tube housing. In some embodiments, the apertured wall 109 in the distribution tube can be understood as a nozzle in accordance with embodiments described herein. For example, the walls 109 of the openings 107 may include a first nozzle material (for example coated with a first nozzle material), wherein the heat conductivity value of the first nozzle material is greater than the thermal conductivity of the first distribution tube material or greater than 21W/mK. In one example, the walls 109 of the openings 107 may be coated with copper. In one embodiment, the wall may be covered with copper and a second nozzle material, such as chemically inert to the vaporized organic material.

第3b圖繪示根據此處所述實施例之分佈管之一實施例的示意圖。繪示於第3b圖中之分佈管106包括開孔107,開孔107提供而具有延伸牆108。一般來說,開孔107之延伸牆108係沿著實質上垂直於分佈管殼體116之第一方向136的方向延伸。根據一些實施例,開孔107之延伸牆108可從分佈管以任何適合之角度延伸。於一些實施例中,分佈管殼體116之開孔107之延伸牆108可提供分佈管106的噴嘴。舉例來說,延伸牆108可包括第一噴嘴材料,或可以第一噴嘴材料製成。根據一些實施 例,延伸牆108可在內側塗佈有第一及/或第二噴嘴材料,例如是對已蒸發有機材料係為化學惰性之材料。 Figure 3b is a schematic illustration of one embodiment of a distribution tube in accordance with embodiments described herein. The distribution tube 106, shown in Figure 3b, includes an opening 107 provided with an extension wall 108. Generally, the extension wall 108 of the aperture 107 extends in a direction that is substantially perpendicular to the first direction 136 of the distribution tube housing 116. According to some embodiments, the extension wall 108 of the aperture 107 can extend from the distribution tube at any suitable angle. In some embodiments, the extension wall 108 of the opening 107 of the distribution tube housing 116 can provide a nozzle for the distribution tube 106. For example, the extension wall 108 can include a first nozzle material or can be made from a first nozzle material. According to some implementations For example, the extension wall 108 can be coated with a first and/or second nozzle material on the inside, such as a material that is chemically inert to the evaporated organic material.

於一些實施例中,延伸牆108係提供用於固定噴嘴於分佈管殼體116之固定輔助,噴嘴舉例為如第2a至2d圖中範例性繪示之噴嘴。根據一些實施例,延伸牆108可提供用以鎖固噴嘴於分佈管殼體116之螺紋。 In some embodiments, the extension wall 108 provides a fixed aid for securing the nozzle to the distribution tube housing 116, such as the nozzles exemplarily shown in Figures 2a through 2d. According to some embodiments, the extension wall 108 can provide threads for locking the nozzle to the distribution tube housing 116.

回到第1a至1c圖,第1a至1c圖繪示材料沈積配置之示意圖,根據此處所述實施例之上述分佈管與上述噴嘴可使用於材料沈積配置。根據可與此處所述其他實施例結合之一些實施例,分佈管之噴嘴可調整以用於從一方向中釋放已蒸發材料,此方向係不同於分佈管之長度方向,例如是實質上垂直於分佈管之長度方向。根據一些實施例,此些噴嘴係排列以具有+- 20°於水平之主要蒸發方向。根據一些特定實施例,蒸發方向可略微地向上定向,舉例為從水平向上15°之範圍中,例如是向上3°至7°。 因此,基板可稍微傾斜,以實質上垂直於蒸發方向。可減少產生不需要的粒子。然而,根據此處所述實施例的噴嘴及材料沈積配置可亦使用於沈積設備中,此沈積設備係裝配以用於沈積材料於水平定向之基板上。 Returning to Figures 1a through 1c, Figures 1a through 1c illustrate schematic views of a material deposition configuration that can be used in a material deposition configuration in accordance with the embodiments described herein. According to some embodiments, which can be combined with other embodiments described herein, the nozzle of the distribution tube can be adjusted for releasing the evaporated material from a direction that is different from the length direction of the distribution tube, for example substantially vertical In the length direction of the distribution tube. According to some embodiments, the nozzles are arranged to have a primary evaporation direction of +-20° to the level. According to some particular embodiments, the evaporation direction may be slightly upwardly oriented, for example in the range of 15° from the horizontal, for example 3° to 7° upward. Therefore, the substrate can be slightly inclined to be substantially perpendicular to the evaporation direction. It can reduce the generation of unwanted particles. However, nozzle and material deposition configurations in accordance with embodiments described herein can also be used in deposition apparatus that is assembled for depositing materials onto a horizontally oriented substrate.

於一例子中,分佈管106之長度至少對應於在沈積設備中之將沈積基板的高度。於許多情況中,分佈管106之長度將至少10%或甚至20%長於將沈積基板之高度。具有長於基板之高度的分佈管,在基板之上端及/或基板之下端係可提供均勻沈 積。 In one example, the length of the distribution tube 106 corresponds at least to the height of the substrate to be deposited in the deposition apparatus. In many cases, the length of the distribution tube 106 will be at least 10% or even 20% longer than the height at which the substrate will be deposited. A distribution tube having a height longer than the substrate, providing uniform deposition at the upper end of the substrate and/or at the lower end of the substrate product.

根據可與此處所述其他實施例結合之一些實施例,分佈管之長度可為1.3m或以上,舉例為2.5m或以上。根據一配置,如第1a圖中所示,蒸發坩鍋104係提供於分佈管106之下端。有機材料係於蒸發坩鍋104中蒸發。有機材料之蒸汽係在分佈管之底部進入分佈管106,且本質上偏側邊地(sideways)導引通過分佈管中之噴嘴朝向舉例為本質上垂直之基板。 According to some embodiments, which may be combined with other embodiments described herein, the length of the distribution tube may be 1.3 m or more, for example 2.5 m or more. According to one configuration, as shown in Figure 1a, the evaporation crucible 104 is provided at the lower end of the distribution tube 106. The organic material is evaporated in the evaporation crucible 104. The vapor of the organic material enters the distribution tube 106 at the bottom of the distribution tube and is essentially laterally directed through the nozzles in the distribution tube toward the substrate, which is, for example, substantially perpendicular.

第1b圖繪示材料源之一部分的放大圖,其中分佈管106係連接於蒸發坩鍋104。凸緣單元703係裝配以提供蒸發坩鍋104和分佈管106之間的連接。舉例來說,蒸發坩鍋及分佈管係提供而作為分離單元,而可分離且連接或組裝於凸緣單元,舉例是為了進行材料源之操作。 Figure 1b shows an enlarged view of a portion of the material source in which the distribution tube 106 is attached to the evaporation crucible 104. The flange unit 703 is assembled to provide a connection between the evaporation crucible 104 and the distribution tube 106. For example, an evaporation crucible and a distribution tube are provided as separate units that can be separated and attached or assembled to a flange unit, for example for operation of a material source.

分佈管106具有內部中空空間710。加熱單元715可提供以加熱分佈管。因此,分佈管106可加熱至一溫度,使得有機材料之蒸汽係不凝結於分佈管106之牆的內部,有機材料之蒸汽藉由蒸發坩鍋104提供。 The distribution tube 106 has an internal hollow space 710. A heating unit 715 can be provided to heat the distribution tube. Therefore, the distribution pipe 106 can be heated to a temperature such that the vapor of the organic material does not condense inside the wall of the distribution pipe 106, and the vapor of the organic material is supplied by the evaporation crucible 104.

舉例來說,分佈管可保持在一溫度,此溫度係代表性約1℃至約20℃,更代表性約5℃至約20℃,且甚至更代表性約10℃至約15℃高於將沈積於基板上之材料的蒸發溫度。兩個或多個加熱遮蔽件717係提供於分佈管106之管周圍。 For example, the distribution tube can be maintained at a temperature that is typically from about 1 ° C to about 20 ° C, more typically from about 5 ° C to about 20 ° C, and even more representatively from about 10 ° C to about 15 ° C. The evaporation temperature of the material to be deposited on the substrate. Two or more heating shields 717 are provided around the tubes of the distribution tube 106.

根據一些實施例,包括一材料之噴嘴可導引加熱之分佈管殼體的溫度至噴嘴,此材料具有高於分佈管殼體之熱傳導 率的熱傳導率或具有高於21W/mK之熱傳導率。當使用根據此處所述實施例之分佈管時,增加噴嘴及分佈管殼體之溫度的一致可達成。在材料沈積配置中之一致的增加可增加已蒸發材料之均勻及已沈積材料、已塗佈基板及產品之品質。 According to some embodiments, a nozzle comprising a material can direct the temperature of the heated distribution tube housing to a nozzle having a heat transfer higher than the distribution tube housing The thermal conductivity of the rate or has a thermal conductivity higher than 21 W/mK. When the distribution tube according to the embodiments described herein is used, increasing the uniformity of the temperature of the nozzle and the distribution tube housing can be achieved. A consistent increase in the material deposition configuration can increase the uniformity of the evaporated material and the quality of the deposited material, coated substrate, and product.

在操作期間,分佈管106可在凸緣單元703連接於蒸發坩鍋104。蒸發坩鍋104係裝配以接收將蒸發之有機材料且蒸發有機材料。根據一些實施例,將蒸發之材料可包括氧化銦錫(ITO)、NPD、Alq3、喹吖啶酮(Quinacridone)、Mg/AG、星狀(starburst)材料、及類似物之至少一者。第1b圖繪示穿過蒸發坩鍋104之殼體的剖面圖。再填充開孔係提供在舉例為蒸發坩鍋之上部,再填充開孔可使用栓(plug)722、蓋(lid)、覆蓋件或類似物關閉,用以關閉蒸發坩鍋104之內部空間(enclosure)。 The distribution tube 106 can be coupled to the evaporation crucible 104 at the flange unit 703 during operation. The evaporation crucible 104 is assembled to receive the organic material to be evaporated and to evaporate the organic material. According to some embodiments, the material to be evaporated may include at least one of indium tin oxide (ITO), NPD, Alq 3 , quinacridone, Mg/AG, starburst material, and the like. Figure 1b shows a cross-sectional view through the housing of the evaporation crucible 104. The refilling opening is provided, for example, on the upper portion of the evaporation crucible, and the refilling opening can be closed using a plug 722, a lid, a cover or the like to close the inner space of the evaporation crucible 104 ( Enclosure).

外部加熱單元725係提供於蒸發坩鍋104之內部空間中。外部加熱單元可沿著蒸發坩鍋104之牆的至少一部分延伸。根據可與此處所述其他實施例結合之一些實施例,一或多個中央加熱元件726可額外或選擇性提供。第1b圖繪示兩個中央加熱元件726。根據一些應用,蒸發坩鍋104可更包括遮罩物727。 An external heating unit 725 is provided in the internal space of the evaporation crucible 104. The external heating unit can extend along at least a portion of the wall of the evaporation crucible 104. One or more central heating elements 726 may be additionally or selectively provided in accordance with some embodiments that may be combined with other embodiments described herein. Figure 1b shows two central heating elements 726. According to some applications, the evaporation crucible 104 may further include a mask 727.

根據一些實施例,如有關於第1a至1b圖範例性繪示,蒸發坩鍋104係提供於分佈管106之下側。根據可與此處所述其他實施例結合之再其他實施例,蒸汽導管732可於分佈管之中央部提供於分佈管106,或可於分佈管之下端及分佈管之上端之間的另一位置提供於分佈管106。第1c圖繪示具有分佈管106 及提供於分佈管之中央部的蒸汽導管732的材料源之一例子之示意圖。有機材料之蒸汽係產生於蒸發坩鍋104中且導引通過蒸汽導管732至分佈管106之中央部。蒸汽係經由數個噴嘴712離開分佈管106,此些噴嘴712可為有關於第2a至2d圖所說明之噴嘴。根據可與此處所述其他實施例結合之再其他實施例,兩個或多個蒸汽導管732可沿著分佈管106之長度提供於不同位置。蒸汽導管732可連接於一個蒸發坩鍋104或數個蒸發坩鍋104。舉例來說,各蒸汽導管732可具有對應之蒸發坩鍋104。或者,蒸發坩鍋104可流體連通於兩個或多個蒸汽導管732,此兩個或多個蒸汽導管732係連接於分佈管106。 According to some embodiments, as illustrated with respect to Figures 1a through 1b, the evaporation crucible 104 is provided on the underside of the distribution tube 106. According to still other embodiments that may be combined with other embodiments described herein, the steam conduit 732 may be provided to the distribution tube 106 at a central portion of the distribution tube, or may be between the lower end of the distribution tube and the upper end of the distribution tube. The location is provided to the distribution tube 106. Figure 1c shows a distribution tube 106 And a schematic of an example of a source of material for the steam conduit 732 provided in the central portion of the distribution tube. The vapor of the organic material is produced in the evaporation crucible 104 and directed through the vapor conduit 732 to the central portion of the distribution tube 106. The steam exits the distribution tube 106 via a plurality of nozzles 712, which may be nozzles as illustrated with respect to Figures 2a through 2d. According to still other embodiments that may be combined with other embodiments described herein, two or more steam conduits 732 may be provided at different locations along the length of the distribution tube 106. The steam conduit 732 can be coupled to an evaporation crucible 104 or a plurality of evaporation crucibles 104. For example, each steam conduit 732 can have a corresponding evaporation crucible 104. Alternatively, the evaporation crucible 104 can be in fluid communication with two or more steam conduits 732 that are coupled to the distribution tube 106.

如此處所述,分佈管可為中空圓柱。名稱圓柱可理解為一般接受之具有圓形底部形狀、圓形頂部形狀以及連接頂部圓形和底部圓形之曲面區域或殼。根據可與此處所述其他實施例結合之其他額外或選擇性實施例,名稱圓柱可在數感(mathematical sense)中更理解為具有任意底部形狀及一致之頂部形狀,以及連接頂部形狀和底部形狀之曲面區域或殼。因此,圓柱不一定必須為圓形剖面。取而代之,底部表面和頂部表面可具有不同於圓形之形狀。 As described herein, the distribution tube can be a hollow cylinder. The name cylinder is understood to generally accept a circular bottom shape, a circular top shape, and a curved surface area or shell connecting the top circular and bottom circular shapes. According to other additional or alternative embodiments that may be combined with other embodiments described herein, the name cylinder may be more understood in a mathematical sense as having any bottom shape and a consistent top shape, as well as joining the top shape and bottom. The curved surface area or shell of the shape. Therefore, the cylinder does not have to be a circular section. Instead, the bottom and top surfaces may have a different shape than a circle.

第4圖繪示沈積設備300之示意圖,根據此處所述實施例之材料沈積配置或噴嘴可在沈積設備300中使用。沈積設備300包括材料源100d於真空腔室110中之一位置。根據可與此處所述其他實施例結合之一些實施例,材料源係裝配以用於平移 運動或繞著軸旋轉。材料源100d具有一或多個蒸發坩鍋104及一或多個分佈管106。兩個蒸發坩鍋及兩個分佈管係繪示於第4圖中。分佈管106係由支座102支撐。再者,根據一些實施例,蒸發坩鍋104可亦由支座102支撐。兩個基板121係提供於真空腔室110中。一般來說,用於在基板上遮蔽層沈積的遮罩132可提供於基板和材料源100d之間。有機材料係從分佈管106蒸發。 根據一些實施例,材料沈積配置可為如第1a至1c圖中所示之材料沈積配置。 4 is a schematic diagram of a deposition apparatus 300 that may be used in a deposition apparatus 300 in accordance with the material deposition configurations or nozzles described herein. The deposition apparatus 300 includes a source of material 100d in one of the vacuum chambers 110. According to some embodiments, which can be combined with other embodiments described herein, the material source is assembled for translation Move or rotate around the axis. Material source 100d has one or more evaporation crucibles 104 and one or more distribution tubes 106. Two evaporation crucibles and two distribution tubes are shown in Figure 4. The distribution tube 106 is supported by the support 102. Again, according to some embodiments, the evaporation crucible 104 can also be supported by the support 102. Two substrates 121 are provided in the vacuum chamber 110. In general, a mask 132 for masking layer deposition on a substrate can be provided between the substrate and the material source 100d. The organic material evaporates from the distribution tube 106. According to some embodiments, the material deposition configuration may be a material deposition configuration as shown in Figures 1a through 1c.

根據此處所述實施例,基板在本質上垂直位置中塗佈有有機材料。繪示於第4圖中的視角係為包括材料源100d之設備的上視圖。一般來說,分佈管係為線性蒸汽分佈噴頭。於一些實施例中,分佈管係提供本質上垂直延伸之接線源。根據可與此處所述其他實施例結合之數個實施例,本質上垂直在意指基板方向時特別是理解為允許從垂直方向偏差20°或以下,舉例為10°或以下。舉例來說,此偏差可因基板支座具有從垂直方向之一些偏差而可能產生更穩定之基板位置來提供。然而,在沈積有機材料期間之基板方向係認定為本質上垂直,而不同於水平基板方向。基板的表面係藉由接線源塗佈,接線源係在對應於一基板維度和平移運動之方向中延伸,平移運動係沿著對應於其他基板維度之其他方向。根據其他實施例,沈積設備可為用於沈積材料於本質上水平方向基板上之沈積設備。舉例來說,於沈積設備中塗佈基板可在上或下之方向中執行。 According to embodiments described herein, the substrate is coated with an organic material in an essentially vertical position. The viewing angle depicted in Figure 4 is a top view of the device including material source 100d. Generally, the distribution pipe is a linear steam distribution nozzle. In some embodiments, the distribution tube provides a source of wiring that extends substantially vertically. According to several embodiments, which can be combined with other embodiments described herein, it is understood in particular to mean that the direction of the substrate is substantially allowed to deviate by 20° or less from the vertical direction, for example 10° or less. For example, this deviation may be provided by the substrate support having some deviation from the vertical direction that may result in a more stable substrate position. However, the substrate orientation during deposition of the organic material is considered to be substantially vertical, unlike the horizontal substrate orientation. The surface of the substrate is coated by a wiring source that extends in a direction corresponding to a substrate dimension and translational motion along other directions corresponding to other substrate dimensions. According to other embodiments, the deposition apparatus can be a deposition apparatus for depositing material on a substantially horizontally oriented substrate. For example, coating the substrate in the deposition apparatus can be performed in an up or down direction.

第4圖繪示用以於真空腔室110中沈積有機材料之沈積設備300之一實施例的示意圖。材料源100d係提供於真空腔室110中之一軌道上,此軌道例如是環狀軌道或線性導件320。 軌道或線性導件320係裝配以用於材料源100d之平移運動。根據可與此處所述其他實施例結合之不同實施例,用於平移運動之驅動器可提供於材料源100d中、提供於軌道或線性導件320、提供於真空腔室110中或其組合。第4圖繪示閥205,閥205舉例為閘閥。閥205係提供至相鄰之真空腔室(未繪示於第4圖中)之真空密封。閥可開啟以傳送基板121或遮罩132進入真空腔室110中或離開真空腔室110。 FIG. 4 is a schematic diagram showing one embodiment of a deposition apparatus 300 for depositing organic material in a vacuum chamber 110. Material source 100d is provided on one of the tracks in vacuum chamber 110, such as an annular track or linear guide 320. A track or linear guide 320 is assembled for translational movement of the material source 100d. According to different embodiments, which may be combined with other embodiments described herein, a driver for translational motion may be provided in material source 100d, provided in rail or linear guide 320, provided in vacuum chamber 110, or a combination thereof. Figure 4 illustrates valve 205, which is exemplified by a gate valve. Valve 205 is provided to a vacuum seal to an adjacent vacuum chamber (not shown in Figure 4). The valve can be opened to transfer the substrate 121 or the mask 132 into or out of the vacuum chamber 110.

根據可與此處所述其他實施例結合之一些實施例,例如是維護真空腔室210之其他真空腔室係提供而相鄰於真空腔室110。根據一些實施例,真空腔室110及維護真空腔室210係以閥207連接。閥207係裝配以開啟及關閉在真空腔室110及維護真空腔室210之間的真空密封。當閥207係為開啟狀態中時,材料源100d可傳送至維護真空腔室210。之後,閥可關閉以提供在真空腔室110和維護真空腔室210之間的真空密封。如果閥207係關閉時,維護真空腔室210可排氣且開啟,以用以維護材料源100d而無需破壞真空腔室110中之真空。 According to some embodiments, which may be combined with other embodiments described herein, other vacuum chambers, such as maintenance vacuum chamber 210, are provided adjacent to vacuum chamber 110. According to some embodiments, the vacuum chamber 110 and the maintenance vacuum chamber 210 are connected by a valve 207. Valve 207 is assembled to open and close the vacuum seal between vacuum chamber 110 and maintenance vacuum chamber 210. The material source 100d can be transferred to the maintenance vacuum chamber 210 when the valve 207 is in the open state. Thereafter, the valve can be closed to provide a vacuum seal between the vacuum chamber 110 and the maintenance vacuum chamber 210. If the valve 207 is closed, the maintenance vacuum chamber 210 can be vented and opened to maintain the material source 100d without damaging the vacuum in the vacuum chamber 110.

在4圖中所示之實施例中,兩個基板121係支撐於在真空腔室110中之各自的傳送軌道上。再者,兩個軌道係提供,用於設置遮罩132於其上。基板121之塗佈可由各自的遮罩132 所遮蔽。根據典型實施例,此些遮罩132係提供於遮罩框架131中,以支承遮罩132於預定位置中,此些遮罩132也就是對應第一基板121之第一遮罩132與對應第二基板121之第二遮罩132。 In the embodiment shown in FIG. 4, the two substrates 121 are supported on respective transport tracks in the vacuum chamber 110. Furthermore, two rails are provided for setting the mask 132 thereon. The coating of the substrate 121 may be performed by respective masks 132 Covered. According to an exemplary embodiment, the masks 132 are provided in the mask frame 131 to support the masks 132 in predetermined positions. The masks 132 are corresponding to the first masks 132 and corresponding portions of the first substrate 121. The second mask 132 of the two substrates 121.

根據可與此處所述其他實施例結合之一些實施例,基板121可由基板支座126支撐,基板支座126係連接於對準單元112。對準單元112可調整基板121相對於遮罩132之位置。 第4圖繪示基板支座126連接於對準單元112之實施例的示意圖。因此,基板係相對於遮罩132移動,以提供在有機材料沈積期間基板及遮罩之間恰當的對準。根據可與此處所述其他實施例結合之進一步的實施例,遮罩132及/或支承遮罩132之遮罩框架131可選擇性或額外地連接於對準單元112。於一些實施例中,遮罩可相對於基板121定位或遮罩132和基板121兩者可相對於彼此定位。裝配以用以調整在基板121和遮罩132相對於彼此之間的位置的對準單元112係在沈積期間提供恰當對準的遮蔽,而有利於高品質、發光二極體(LED)顯示器製造、或OLED顯示器製造。 According to some embodiments, which may be combined with other embodiments described herein, the substrate 121 may be supported by a substrate support 126 that is coupled to the alignment unit 112. The alignment unit 112 can adjust the position of the substrate 121 relative to the mask 132. FIG. 4 is a schematic diagram showing an embodiment in which the substrate holder 126 is coupled to the alignment unit 112. Thus, the substrate is moved relative to the mask 132 to provide proper alignment between the substrate and the mask during deposition of the organic material. According to a further embodiment, which may be combined with other embodiments described herein, the mask 132 and/or the mask frame 131 supporting the mask 132 may be selectively or additionally coupled to the alignment unit 112. In some embodiments, the mask can be positioned relative to the substrate 121 or both the mask 132 and the substrate 121 can be positioned relative to each other. The alignment unit 112, which is assembled to adjust the position between the substrate 121 and the mask 132 relative to each other, provides proper alignment of the shadow during deposition, facilitating the manufacture of high quality, light emitting diode (LED) displays. Or OLED display manufacturing.

如第4圖中所示,線性導件320係提供材料源100d之平移運動之方向。在材料源100d之兩側上係提供遮罩132。遮罩132可本質上平行於平移運動之方向延伸。再者,在材料源100d之相對側之基板121可亦在本質上平行於平移運動之方向延伸。 根據典型實施例,基板121可經由閥205移動至真空腔室110中且離開真空腔室110。沈積設備300可包括用以傳送各基板121 之各自的傳送軌道。舉例來說,傳送軌道可平行於如第4圖中所示之基板位置延伸且進入或離開真空腔室110。 As shown in Figure 4, the linear guide 320 provides the direction of the translational motion of the material source 100d. A mask 132 is provided on both sides of the material source 100d. The mask 132 can extend substantially parallel to the direction of the translational motion. Furthermore, the substrate 121 on the opposite side of the material source 100d may also extend substantially parallel to the direction of translational motion. According to an exemplary embodiment, the substrate 121 can be moved into the vacuum chamber 110 via the valve 205 and away from the vacuum chamber 110. The deposition apparatus 300 can include a substrate 121 for transferring Their respective transfer tracks. For example, the transfer track can extend parallel to the substrate position as shown in FIG. 4 and enter or exit the vacuum chamber 110.

一般來說,其他軌道係提供以用以支撐遮罩框架131及遮罩132。因此,可與此處所述其他實施例結合之一些實施例可包括在真空腔室110中之四個軌道。為了移動此些遮罩132之一者離開腔室來舉例是清洗遮罩,遮罩框架131及遮罩可移動至基板121之傳送軌道上。各自之遮罩框架可在用於基板之傳送軌道上接著離開或進入真空腔室110。雖然提供用以遮罩框架131的分離之傳送軌道來進入及離開真空腔室110係有可能的,但如果只有兩個軌道係延伸進入及離開真空腔室110且此外遮罩框架131可藉由適合之致動器或機器人移動到用於基板之傳送軌道之各自一者,沈積設備300之所有權的成本可減少,此兩個軌道也就是基板之傳送軌道。 In general, other rails are provided to support the mask frame 131 and the mask 132. Accordingly, some embodiments that may be combined with other embodiments described herein may include four tracks in the vacuum chamber 110. To move one of the masks 132 away from the chamber, for example, to clean the mask, the mask frame 131 and the mask can be moved to the transport track of the substrate 121. The respective mask frames can then exit or enter the vacuum chamber 110 on the transfer track for the substrate. Although it is possible to provide separate transport tracks for masking the frame 131 to enter and exit the vacuum chamber 110, if only two track systems extend into and out of the vacuum chamber 110 and further the mask frame 131 can be The cost of ownership of the deposition apparatus 300 can be reduced by the movement of a suitable actuator or robot to the respective transfer track for the substrate, which is the transfer track of the substrate.

第4圖繪示材料源100d之範例性實施例之示意圖。 材料源100d包括支座102。支座102係裝配以沿著線性導件320平移運動。支座102支撐兩個蒸發坩鍋104及兩個分佈管106,分佈管106提供於蒸發坩鍋104之上方。在蒸發坩鍋中產生之蒸汽可向上地移動且離開分佈管之一或多個噴嘴或出口。 FIG. 4 is a schematic diagram showing an exemplary embodiment of a material source 100d. Material source 100d includes a support 102. The mount 102 is assembled for translational movement along the linear guide 320. The support 102 supports two evaporation crucibles 104 and two distribution tubes 106, which are provided above the evaporation crucible 104. The steam generated in the evaporation crucible can move up and away from one or more nozzles or outlets of the distribution tube.

根據此處所述實施例,材料源包括一或多個蒸發坩鍋及一或多個分佈管,其中此一或多個分佈管之各自一者可流體連通於此一或多個蒸發坩鍋之各自一者。用於OLED裝置製造之數種應用包括處理特徵,其中二或多個有機材料係同時地蒸發。 因此,如例如是第4圖中所示,兩個分佈管及對應之蒸發坩鍋可相鄰於彼此提供。因此,材料源100d可亦意指為材料源陣列,舉例來說,其中多於一種有機材料係同時蒸發。如此處所述,材料源陣列本身可意指為用於兩個或多個有機材料的材料源,例如是材料源陣列可提供用於蒸發及沈積三個材料到一基板上。 According to embodiments described herein, the material source includes one or more evaporation crucibles and one or more distribution tubes, wherein each of the one or more distribution tubes can be in fluid communication with the one or more evaporation crucibles One of each. Several applications for OLED device fabrication include processing features in which two or more organic materials are simultaneously evaporated. Thus, as shown, for example, in Figure 4, two distribution tubes and corresponding evaporation crucibles may be provided adjacent to one another. Thus, material source 100d can also be referred to as an array of material sources, for example, where more than one organic material evaporates simultaneously. As described herein, a source of material array may itself be referred to as a source of material for two or more organic materials, for example, an array of material sources may be provided for evaporating and depositing three materials onto a substrate.

分佈管之此一或多個噴嘴可包括例如是可為提供在噴頭或另一蒸汽分佈系統中的一或多個噴嘴。提供於此處所述之分佈管的噴嘴可為此處所述實施例中說明之噴嘴,例如是有關於第2a至2d圖說明之噴嘴。分佈管於此可理解為包括一內部空間,此內部空間具有數個開孔,使得在分佈管中之壓力係高於在分佈管之外側的壓力,舉例為至少一個數量級。於一例子中,在分佈管中之壓力可在約10-2至10-1mbar之間,或在約10-2至約10-3mbar之間。根據一些實施例,在真空腔室中之壓力可在約10-5至約10-7mbar之間。 The one or more nozzles of the distribution tube can include, for example, one or more nozzles that can be provided in a spray head or another vapor distribution system. The nozzles provided for the distribution tubes described herein can be the nozzles described in the embodiments described herein, such as the nozzles described with respect to Figures 2a through 2d. The distribution tube is here understood to include an internal space having a plurality of openings such that the pressure in the distribution tube is higher than the pressure on the outside of the distribution tube, for example by at least one order of magnitude. In one example, the pressure in the distribution tube can be between about 10-2 and 10-1 mbar, or between about 10-2 and about 10-3 mbar. According to some embodiments, the pressure in the vacuum chamber can be between about 10-5 and about 10-7 mbar.

根據可與此處所述其他實施例結合之數個實施例,分佈管之旋轉可藉由蒸發器控制殼體之旋轉提供,至少分佈管係固定於蒸發器控制殼體上。藉由沿著環狀軌道之彎曲部分移動材料源,可額外或選擇性提供分佈管旋轉。一般來說,蒸發坩鍋係亦固定於蒸發器控制殼體上。因此,材料源包括分佈管及蒸發坩鍋,分佈管及蒸發坩鍋舉例可旋轉地固定在一起。 According to several embodiments, which may be combined with other embodiments described herein, the rotation of the distribution tube may be provided by rotation of the evaporator control housing, at least the distribution piping being secured to the evaporator control housing. The distribution tube rotation can be additionally or selectively provided by moving the material source along the curved portion of the annular track. Generally, the evaporation crucible system is also fixed to the evaporator control housing. Therefore, the material source includes a distribution tube and an evaporation crucible, and the distribution tube and the evaporation crucible are rotatably fixed together as an example.

根據可與此處所述其他實施例結合之一些實施例,分佈管或蒸發管可設計成三角形之形狀,使得分佈管之開孔或噴 嘴可盡可能的彼此靠近。讓分佈管之開孔或噴嘴盡可能的彼此靠近係提供例如是改善混合不同有機材料,舉例為用於在共蒸發兩個、三個或甚至多個不同之有機材料的情況。 According to some embodiments, which may be combined with other embodiments described herein, the distribution tube or evaporation tube may be designed in the shape of a triangle such that the opening or spray of the distribution tube The mouths can be as close to each other as possible. Having the openings or nozzles of the distribution tube as close to one another as possible provides, for example, improved mixing of different organic materials, for example for co-evaporation of two, three or even a plurality of different organic materials.

根據此處所述數個實施例,分佈管之出口側的寬度(包括開孔之分佈管之側)係為剖面之最大維度的30%或少於30%。有鑑於其,分佈管之開孔或相鄰分佈管之噴嘴可提供在較小距離處。此較小距離係改善數個有機材料之混合,此些有機材料係相鄰於彼此而進行蒸發。再者,獨立於改善有機材料之混合之外,以本質上平行方式面對基板之牆的寬度可額外或選擇性減少。因此,以本質上平行方式面對基板的牆之表面區域可減少。 此配置減少提供至遮罩或基板之熱負荷,遮罩或基板係支撐在沈積區域中,或稍微在沈積區域之前。 According to several embodiments described herein, the width of the outlet side of the distribution tube (including the side of the distribution tube of the opening) is 30% or less of the largest dimension of the profile. In view of this, the opening of the distribution tube or the nozzle of the adjacent distribution tube can be provided at a small distance. This smaller distance improves the mixing of several organic materials that are vaporized adjacent to each other. Furthermore, the width of the wall facing the substrate in an essentially parallel manner may be additionally or selectively reduced, independently of improving the mixing of the organic materials. Therefore, the surface area of the wall facing the substrate in an essentially parallel manner can be reduced. This configuration reduces the thermal load provided to the mask or substrate, which is supported in the deposition area, or slightly before the deposition area.

有鑑於材料源之三角形之形狀,朝向遮罩輻射之面積係額外或選擇性減少。此外,金屬板之堆疊可提供,以減少從材料源至遮罩之熱傳送,金屬板之堆疊係舉例為高達10個金屬板。根據可與此處所述其他實施例結合之一些實施例,加熱遮蔽件或金屬板可提供而具有用於噴嘴之孔口(orifices),且可貼附於至少源之前側,也就是面對基板之側。 In view of the shape of the triangle of the material source, the area of radiation directed toward the mask is additionally or selectively reduced. In addition, a stack of metal sheets can be provided to reduce heat transfer from the material source to the mask, which is exemplified by up to 10 metal sheets. According to some embodiments, which may be combined with other embodiments described herein, a heating shield or sheet may be provided with an orifice for the nozzle and may be attached to at least the front side of the source, ie facing The side of the substrate.

雖然如第4圖中所示之實施例係提供具有可移動源之沈積設備,具有通常知識者可理解上述實施例可亦提供在數個沈積設備中,基板於處理期間係在此些沈積設備中移動。舉例來說,可沿著靜態材料源導引且驅動將塗佈之基板。 Although the embodiment as shown in FIG. 4 provides a deposition apparatus having a movable source, it will be understood by those of ordinary skill that the above embodiments may also be provided in several deposition apparatus in which the substrate is attached during processing. Move in. For example, the substrate to be coated can be guided and driven along a source of static material.

根據可與此處所述其他實施例結合之一些實施例,用以於真空腔室中沈積一、兩個或多個已蒸發材料於基板上之材料沈積配置係提供。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發源或第一材料蒸發器,裝配以用以蒸發將沈積於基板上之第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一分佈管殼體,其中第一分佈管係流體連通於第一材料蒸發源,其中材料源更包括數個第一噴嘴,此些第一噴嘴係位於第一分佈管殼體中。一般來說,此些第一噴嘴之一或多個噴嘴包括開孔長度及開孔尺寸,其中此些第一噴嘴之此一或多個噴嘴之長度對尺寸比係等同於或大於2:1。材料沈積配置包括第二材料源,第二材料源包括第二材料蒸發器,裝配以用於蒸發將沈積於基板上之第二材料。第二材料源更包括第二分佈管,第二分佈管包括第二分佈管殼體,其中第二分佈管係流體連通於第二材料蒸發器。第二材料源更包括數個第二噴嘴,此些第二噴嘴位於第二分佈管殼體中。根據此處所述實施例,在此些第一噴嘴之一第一噴嘴與此些第二噴嘴之一第二噴嘴之間的距離係等同於或少於30mm。根據一些實施例,第一材料和第二材料可為相同之材料。 According to some embodiments, which may be combined with other embodiments described herein, a material deposition arrangement for depositing one, two or more vaporized materials on a substrate in a vacuum chamber is provided. The material deposition configuration includes a first material source, the first material source including a first material evaporation source or a first material evaporator, assembled to vaporize the first material to be deposited on the substrate. The first material source further includes a first distribution tube, wherein the first distribution tube includes a first distribution tube housing, wherein the first distribution tube is in fluid communication with the first material evaporation source, wherein the material source further comprises a plurality of first nozzles, wherein The first nozzles are located in the first distribution tube housing. Generally, one or more nozzles of the first nozzles include an opening length and an opening size, wherein the length of the one or more nozzles of the first nozzles is equal to or greater than 2:1. . The material deposition configuration includes a second material source, the second material source including a second material evaporator, assembled for vaporizing a second material to be deposited on the substrate. The second material source further includes a second distribution tube, the second distribution tube including a second distribution tube housing, wherein the second distribution tube is in fluid communication with the second material evaporator. The second material source further includes a plurality of second nozzles, the second nozzles being located in the second distribution tube housing. According to embodiments described herein, the distance between the first nozzle of one of the first nozzles and the second nozzle of one of the second nozzles is equal to or less than 30 mm. According to some embodiments, the first material and the second material may be the same material.

根據可與此處所述其他實施例結合之進一步實施例,用於在真空腔室中沈積一個、兩個或多個已蒸發材料於基板上之材料沈積配置係提供。材料沈積配置包括第一材料源,第一材料源包括第一材料蒸發器,裝配以用於蒸發將沈積於基板上之第一材料。第一材料源更包括第一分佈管,第一分佈管包括第一 分佈管殼體,其中第一分佈管係流體流通於第一材料蒸發器;再者,第一材料源包括數個第一噴嘴,此些第一噴嘴位於第一分佈管殼體中,其中此些第一噴嘴之一或多個噴嘴包括開孔長度及開孔尺寸且係裝配以提供第一分佈方向。此些第一噴嘴之此一或多個噴嘴的長度對尺寸比係等同於或大於2:1。材料沈積配置更包括第二材料源,第二材料源包括第二材料蒸發器,裝配以用於蒸發將沈積於基板上之第二材料;及第二分佈管。第二分佈管包括第二分佈管殼體,其中第二分佈管流體連通於第二材料蒸發器。 第二材料源更包括數個第二噴嘴,此些第二噴嘴位於第二分佈管殼體中,其中第二噴嘴之一或多者係裝配以提供第二分佈方向。 根據此處所述實施例,此些第一噴嘴之此一或多個噴嘴之第一分佈方向和此些第二噴嘴之此一或多個噴嘴的第二分佈方向係平行於彼此排列,或係從平行排列偏差高達5°。根據一些實施例,第一材料和第二材料可為相同之材料。 According to a further embodiment, which can be combined with other embodiments described herein, a material deposition arrangement for depositing one, two or more vaporized materials on a substrate in a vacuum chamber is provided. The material deposition configuration includes a first material source, the first material source including a first material evaporator assembled for vaporizing the first material to be deposited on the substrate. The first material source further includes a first distribution tube, and the first distribution tube includes the first a distribution tube housing, wherein the first distribution tube system fluid circulates through the first material evaporator; further, the first material source includes a plurality of first nozzles, wherein the first nozzles are located in the first distribution tube housing, wherein One or more of the first nozzles include an opening length and an opening size and are assembled to provide a first distribution direction. The one or more nozzles of the first nozzles have a length to dimension ratio equal to or greater than 2:1. The material deposition configuration further includes a second material source, the second material source including a second material evaporator, assembled for vaporizing a second material to be deposited on the substrate; and a second distribution tube. The second distribution tube includes a second distribution tube housing, wherein the second distribution tube is in fluid communication with the second material evaporator. The second source of material further includes a plurality of second nozzles, the second nozzles being located in the second distribution tube housing, wherein one or more of the second nozzles are assembled to provide a second distribution direction. According to the embodiment described herein, the first distribution direction of the one or more nozzles of the first nozzles and the second distribution direction of the one or more nozzles of the second nozzles are arranged parallel to each other, or The deviation from the parallel arrangement is up to 5°. According to some embodiments, the first material and the second material may be the same material.

根據可與此處所述其他實施例結合之一些實施例,用於在真空腔室中沈積已蒸發材料於基板上之分佈管係提供。分佈管包括分佈管殼體及噴嘴,噴嘴位於分佈管殼體中。噴嘴包括開孔長度及開孔尺寸,其中噴嘴之長度對尺寸比係等同於或大於2:1。再者,噴嘴包括對已蒸發有機材料係為化學惰性之材料。於一例子中,已蒸發有機材料可具有約150℃及約650℃之溫度。 According to some embodiments, which may be combined with other embodiments described herein, a distribution conduit for depositing evaporated material onto a substrate in a vacuum chamber is provided. The distribution tube includes a distribution tube housing and a nozzle, and the nozzle is located in the distribution tube housing. The nozzle includes an opening length and an opening size, wherein the length of the nozzle is equal to or greater than 2:1. Further, the nozzle includes a material that is chemically inert to the evaporated organic material. In one example, the evaporated organic material can have a temperature of about 150 ° C and about 650 ° C.

此處所述實施例特別是有關於沈積有機材料,沈積有機材料舉例為在大面積基板上之OLED顯示器製造。根據一些 實施例,大面積基板或支撐一或多個基板之載體,也就是大面積載體,可具有至少0.174m2之尺寸。舉例來說,沈積設備可適用於處理大面積基板,例如是第5代、第7.5代、第8.5代、或甚至第10代,第5代係對應於約1.4m2之基板(1.1m x 1.3m),第7.5代對應於約4.29m2之基板(1.95m x 2.2m),第8.5代對應於約5.7m2之基板(2.2m x 2.5m),第10代對應於約8.7m2之基板(2.85m×3.05m)。甚至例如是第11代及第12代之更高代及對應之基板面積可以類似之方式應用。根據可與此處所述其他實施例結合之典型實施例,基板厚度可為從0.1至1.8mm及用於基板之支承配置可適用於此種基板厚度。然而,特別是,基板厚度可為約0.9mm或以下,例如是0.5mm或0.3mm,且支承配置係適用於此種基板厚度。一般來說,基板可由任何適合於材料沈積的材料製成。舉例來說,基板可以選自由玻璃(舉例為鈉鈣玻璃、硼矽玻璃等)、金屬、聚合物、陶瓷、複合材料、碳纖材料或任何其他材料或可以沈積製程塗佈之材料的組合所組成之材料製成。 Embodiments described herein are particularly concerned with depositing organic materials, such as OLED display fabrication on large area substrates. According to some embodiments, a large area substrate or a carrier supporting one or more substrates, that is, a large area carrier, may have a size of at least 0.174 m 2 . For example, the deposition apparatus can be adapted to process large-area substrates, such as 5th generation, 7.5th generation, 8.5th generation, or even 10th generation, and the 5th generation corresponds to a substrate of about 1.4m 2 (1.1mx 1.3 m), 7.5G corresponding to the substrate 2 of about 4.29m (1.95mx 2.2m), corresponding to about 8.5 Generation of 5.7m 2 substrate (2.2mx 2.5m), the first passage 10 2 corresponding to the substrate of about 8.7m (2.85m × 3.05m). Even higher generations such as the 11th and 12th generations and corresponding substrate areas can be applied in a similar manner. According to an exemplary embodiment that can be combined with other embodiments described herein, the substrate thickness can range from 0.1 to 1.8 mm and the support configuration for the substrate can be adapted to such substrate thickness. However, in particular, the substrate thickness may be about 0.9 mm or less, such as 0.5 mm or 0.3 mm, and the support configuration is suitable for such substrate thickness. Generally, the substrate can be made of any material suitable for deposition of materials. For example, the substrate may be selected from a combination of glass (eg, soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite, carbon fiber material, or any other material or material that can be deposited by a process coating. Made of materials.

根據此處所述實施例,用以提供材料沈積配置的方法係提供。材料沈積配置可為有關於上述實施例說明的材料沈積配置及/或可為可用於根據此處實施例所述之沈積設備中的材料沈積配置。根據此處所述實施例的方法400之流程圖可見於第5圖中。此方法包括於方塊410中提供材料源,用以蒸發將沈積於基板上之材料,特別是在真空沈積腔室中。 In accordance with embodiments described herein, a method for providing a material deposition configuration is provided. The material deposition configuration can be a material deposition configuration as described with respect to the above embodiments and/or can be a material deposition configuration useful in the deposition apparatus described in accordance with the embodiments herein. A flowchart of a method 400 in accordance with embodiments described herein can be found in FIG. The method includes providing a source of material in block 410 for vaporizing material to be deposited on the substrate, particularly in a vacuum deposition chamber.

根據一些實施例,提供之材料源可舉例為有關於第 1a至3b圖所說明的材料源。舉例來說,材料源可適用於蒸發有機材料。於一例子中,材料源可適用於具有約150℃至約500℃之蒸發溫度的蒸發材料。於一些實施例中,材料源可為坩鍋。 According to some embodiments, the source of the material provided may be exemplified by The material source illustrated in Figures 1a to 3b. For example, a material source can be adapted to evaporate organic materials. In one example, the material source can be applied to an evaporative material having an evaporation temperature of from about 150 °C to about 500 °C. In some embodiments, the source of material can be a crucible.

於方塊420中,方法400包括流體連通分佈管與噴嘴於材料源,以提供在材料源和分佈管及噴嘴之間的流體連通。 根據此處所述一些實施例,噴嘴包括第一噴嘴材料,第一噴嘴材料具有大於21W/mK之熱傳導數值。於一些實施例中,噴嘴可以第一噴嘴材料製成。於一例子中,噴嘴係以第二噴嘴材料塗佈於內側,舉例為藉由以第二噴嘴材料塗佈噴嘴開孔或噴嘴通道之內側。根據一些實施例,第二噴嘴材料係為對已蒸發有機材料為化學惰性之材料,此已蒸發有機材料可舉例為有機材料,具有代表性為約100℃及約650℃之間的溫度,更代表性約100℃及約500℃之間的溫度。 At block 420, method 400 includes fluidly communicating the distribution tube with the nozzle at a source of material to provide fluid communication between the source of material and the distribution tube and the nozzle. According to some embodiments described herein, the nozzle includes a first nozzle material having a heat transfer value greater than 21 W/mK. In some embodiments, the nozzle can be made from a first nozzle material. In one example, the nozzle is coated on the inside with a second nozzle material, for example by coating the nozzle opening or the inside of the nozzle passage with a second nozzle material. According to some embodiments, the second nozzle material is a material that is chemically inert to the evaporated organic material, and the evaporated organic material may be exemplified by an organic material, typically having a temperature between about 100 ° C and about 650 ° C. Representative temperatures between about 100 ° C and about 500 ° C.

根據一些實施例,分佈管可為如上實施例中所述之分佈管,特別是有關於第1a至3b圖之實施例中所說明的分佈管。 於一些實施例中,分佈管可舉例為三角形剖面,用以能夠以最佳化方式使用空間。於一些實施例中,分佈管之噴嘴可為有關於第2a至2d圖所說明之噴嘴。 According to some embodiments, the distribution tube may be a distribution tube as described in the above embodiments, particularly the distribution tube described in the examples of Figures 1a to 3b. In some embodiments, the distribution tube can be exemplified by a triangular profile to enable space to be used in an optimized manner. In some embodiments, the nozzle of the distribution tube can be a nozzle as described with respect to Figures 2a through 2d.

於一些實施例中,此方法包括加熱分佈管至將沈積於基板上之材料之蒸發溫度或以上。分佈管之加熱可藉由加熱裝置執行。於一例子中,加熱裝置之成效可由加熱遮蔽件支援,如舉例為上述有關於第1a至1c圖之說明。 In some embodiments, the method includes heating the distribution tube to or above the evaporation temperature of the material to be deposited on the substrate. Heating of the distribution tube can be performed by a heating device. In one example, the effectiveness of the heating device can be supported by a heating shield, as exemplified by the above description of Figures 1a through 1c.

再者,根據此處所述之線性分佈管、材料沈積配置的使用,及根據此處所述實施例之具有材料沈積配置之沈積設備之至少一者的使用係說明。 Further, the use of at least one of the linear distribution tubes, material deposition configurations, and deposition apparatus having a material deposition configuration in accordance with embodiments described herein is illustrated.

綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (18)

一種線性分佈管(106),用以於一真空腔室(110)中沈積已蒸發材料於一基板(121)上,該線性分佈管包括:一分佈管殼體(116),沿著一第一方向(136)延伸,其中該第一方向係提供該線性分佈管(106)之線性延伸,其中該分佈管殼體(116)包括一第一殼體材料;複數個開孔,位於該分佈管殼體(116)中,其中該些開孔沿著該線性分佈管之線性延伸係為分散式的;以及複數個噴嘴(712),用於該線性分佈管(106),其中該些噴嘴係裝配以用於導引該真空腔室(110)中的該已蒸發材料,該些噴嘴包括一第一噴嘴材料,該第一噴嘴材料具有大於該第一殼體材料的一熱傳導率。 A linear distribution tube (106) for depositing evaporated material on a substrate (121) in a vacuum chamber (110), the linear distribution tube comprising: a distribution tube housing (116) along a first a direction (136) extending, wherein the first direction provides a linear extension of the linear distribution tube (106), wherein the distribution tube housing (116) includes a first housing material; a plurality of openings are located in the distribution In the tube housing (116), wherein the openings are distributed along a linear extension of the linear distribution tube; and a plurality of nozzles (712) for the linear distribution tube (106), wherein the nozzles Mounted for directing the vaporized material in the vacuum chamber (110), the nozzles including a first nozzle material having a thermal conductivity greater than the first shell material. 如申請專利範圍第1項所述之線性分佈管,其中該些噴嘴(712)包括銅(Cu)、鉭(Ta)、鈦(Ti)、鈮(Nb)、類鑽塗層(DLC)、及石墨之至少一者。 The linear distribution tube of claim 1, wherein the nozzles (712) comprise copper (Cu), tantalum (Ta), titanium (Ti), niobium (Nb), diamond-like coating (DLC), And at least one of graphite. 如申請專利範圍第1項所述之線性分佈管,其中該些噴嘴(712)包括一通道(203)及一塗層,該通道用以導引該已蒸發材料通過該些噴嘴,該塗層係至少位於該通道(203)之表面上。 The linear distribution tube of claim 1, wherein the nozzles (712) comprise a channel (203) and a coating for guiding the evaporated material through the nozzles, the coating At least on the surface of the channel (203). 如申請專利範圍第2項所述之線性分佈管,其中該些噴嘴(712)包括一通道(203)及一塗層,該通道用以導引該已蒸發材料通過該些噴嘴,該塗層係至少位於該通道(203)之表面上。 The linear distribution tube of claim 2, wherein the nozzles (712) comprise a channel (203) and a coating for guiding the evaporated material through the nozzles, the coating At least on the surface of the channel (203). 如申請專利範圍第3項所述之線性分佈管,其中該通道 (203)之該表面係塗佈有該第一噴嘴材料或一第二噴嘴材料(208),該第二噴嘴材料對一已蒸發有機材料係為化學惰性。 a linear distribution tube as described in claim 3, wherein the channel The surface of (203) is coated with the first nozzle material or a second nozzle material (208) that is chemically inert to an evaporated organic material. 如申請專利範圍第4項所述之線性分佈管,其中該通道(203)之該表面係塗佈有該第一噴嘴材料或一第二噴嘴材料(208),該第二噴嘴材料對一已蒸發有機材料係為化學惰性。 The linear distribution tube of claim 4, wherein the surface of the channel (203) is coated with the first nozzle material or a second nozzle material (208), the second nozzle material pair has been The evaporated organic material is chemically inert. 如申請專利範圍第5項所述之線性分佈管,其中該些噴嘴(712)之該通道(203)係塗佈有鉭(Ta)、鈮(Nb)、鈦(Ti)、類鑽塗層(DLC)、及石墨之至少一者。 The linear distribution tube of claim 5, wherein the channel (203) of the nozzles (712) is coated with tantalum (Ta), niobium (Nb), titanium (Ti), diamond-like coating. At least one of (DLC) and graphite. 如申請專利範圍第1項所述之線性分佈管,其中該第一噴嘴材料的該熱傳導率大於21W/mk。 The linear distribution tube of claim 1, wherein the first nozzle material has a thermal conductivity greater than 21 W/mk. 如前述申請專利範圍之任一項所述之線性分佈管,其中該些噴嘴(712)包括銅。 A linear distribution tube according to any of the preceding claims, wherein the nozzles (712) comprise copper. 如申請專利範圍第1至8項之任一項所述之線性分佈管,其中該些噴嘴(712)係適用於可鎖固於該線性分佈管(106)。 The linear distribution tube of any one of claims 1 to 8, wherein the nozzles (712) are adapted to be lockable to the linear distribution tube (106). 如申請專利範圍之第1及2項之任一項所述之線性分佈管,其中該些噴嘴(712)包括一通道(203),用以導引該已蒸發材料通過該些噴嘴且提供該通道之一幾何形狀,該通道之該幾何形狀係形成該已蒸發材料之一羽狀物,其中該些噴嘴(712)係設計以形成具有一類似cosn輪廓之一羽狀物,其中n4。 A linear distribution tube according to any one of the preceding claims, wherein the nozzles (712) include a channel (203) for guiding the evaporated material through the nozzles and providing the One of the geometry of the channel, the geometry of the channel forming a plume of the vaporized material, wherein the nozzles (712) are designed to form a plume having a contour similar to the cos n , wherein 4. 一種材料沈積配置(100),用以於一真空腔室(110)中沈積一材料於一基板(121)上,該材料沈積配置包括:一蒸發源,用以提供將蒸發及將沈積之該材料於該基板(121) 上;一分佈管(106),流體流通於該蒸發源,該蒸發源係提供已蒸發之該材料於該分佈管(106);以及一噴嘴(712),用以於該真空腔室(110)中導引該已蒸發材料,其中該噴嘴(712)包括一第一噴嘴材料,具有大於21W/mK之一熱傳導率,其中該噴嘴(712)包括鉭(Ta)、鈦(Ti)、鈮(Nb)、類鑽塗層(DLC)、及石墨之至少一者。 A material deposition arrangement (100) for depositing a material in a vacuum chamber (110) on a substrate (121), the material deposition configuration comprising: an evaporation source for providing evaporation and deposition Material on the substrate (121) a distribution tube (106) through which the fluid circulates, the evaporation source providing the evaporated material to the distribution tube (106); and a nozzle (712) for the vacuum chamber (110) The vaporized material is guided, wherein the nozzle (712) comprises a first nozzle material having a thermal conductivity greater than 21 W/mK, wherein the nozzle (712) comprises tantalum (Ta), titanium (Ti), tantalum At least one of (Nb), diamond-like coating (DLC), and graphite. 如申請專利範圍第12項所述之材料沈積配置,其中該蒸發源係為用於提供有機材料之一蒸發源。 The material deposition configuration of claim 12, wherein the evaporation source is an evaporation source for providing one of the organic materials. 如申請專利範圍第12項所述之材料沈積配置,更包括複數個加熱元件(726),用以加熱該分佈管(106)至將沈積之該材料的一蒸發溫度或以上。 The material deposition arrangement of claim 12, further comprising a plurality of heating elements (726) for heating the distribution tube (106) to an evaporation temperature or above of the material to be deposited. 如申請專利範圍第12項所述之材料沈積配置,其中該分佈管(106)係為如申請專利範圍第1至8項之任一項所述之一線性分佈管,且其中該噴嘴(712)係為該線性分佈管之該些噴嘴之該噴嘴。 The material deposition configuration of claim 12, wherein the distribution tube (106) is a linear distribution tube according to any one of claims 1 to 8, wherein the nozzle (712) The nozzles of the nozzles of the linear distribution tube. 一種真空沈積設備,包括:一真空腔室(110);以及如申請專利範圍第12至15項之任一項所述之一材料沈積配置(100),其中該蒸發源係為用於複數個有機材料之一蒸發坩鍋,連接於該蒸發坩鍋的該材料沈積配置(100)之該分佈管(106)係用以從該蒸發坩鍋導引已蒸發材料至該真空腔室(110)中; 其中該噴嘴(712)包括一第二噴嘴材料(208),對已蒸發之該些有機材料係為化學惰性;以及其中該材料沈積配置(100)之該噴嘴(712)係排列以用於導引該已蒸發材料朝向該真空腔室(110)中之一基板(121)。 A vacuum deposition apparatus comprising: a vacuum chamber (110); and a material deposition configuration (100) according to any one of claims 12 to 15, wherein the evaporation source is for a plurality of One of the organic materials evaporates the crucible, and the distribution tube (106) connected to the material deposition configuration (100) of the evaporation crucible is used to guide the evaporated material from the evaporation crucible to the vacuum chamber (110) in; Wherein the nozzle (712) includes a second nozzle material (208) that is chemically inert to the evaporated organic material; and wherein the nozzle (712) of the material deposition configuration (100) is arranged for guidance The evaporated material is directed toward one of the substrates (121) in the vacuum chamber (110). 一種用以提供用於一真空沈積設備之一材料沈積配置(100)的方法,該方法包括:提供一蒸發源,用以蒸發將沈積於一基板(121)上之材料;以及流體連通一分佈管(106)及一噴嘴(712)於該蒸發源,以提供於該蒸發源與該分佈管(106)及該噴嘴(712)之間的流體連通,其中該噴嘴(712)包括一第一噴嘴材料,具有大於21W/mK之一熱傳導數值,其中該噴嘴(712)包括鉭(Ta)、鈦(Ti)、鈮(Nb)、類鑽塗層(DLC)、及石墨之至少一者。 A method for providing a material deposition configuration (100) for a vacuum deposition apparatus, the method comprising: providing an evaporation source for vaporizing a material to be deposited on a substrate (121); and fluidly communicating a distribution a tube (106) and a nozzle (712) are provided in the evaporation source to provide fluid communication between the evaporation source and the distribution tube (106) and the nozzle (712), wherein the nozzle (712) includes a first The nozzle material has a thermal conductivity value greater than 21 W/mK, wherein the nozzle (712) comprises at least one of tantalum (Ta), titanium (Ti), niobium (Nb), diamond-like coating (DLC), and graphite. 如申請專利範圍第17項所述之方法,更包括加熱該分佈管(106)至將沈積於該基板(121)上之該材料的蒸發溫度或以上。 The method of claim 17, further comprising heating the distribution tube (106) to an evaporation temperature or higher of the material to be deposited on the substrate (121).
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