JP2013189701A - Film forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve soaking properties of vapor deposition material gas between each components of a film forming apparatus.SOLUTION: A film forming apparatus 1000 includes: a material container 1100 in which a vapor deposition material is accommodated; a transport pipe 1200 for transporting gas that includes a vapor of the vapor deposition material evaporated in the material container 1100; and a vapor deposition head 1300 for jetting the gas that has been transported through the transport pipe 1200 and includes the vapor of the vapor deposition material. The film forming apparatus 1000 also includes a heater heating the material container 1100, the transport pipe 1200, and the vapor deposition head 1300. In addition, the material container 1100, the transport pipe 1200, the vapor deposition head 1300 and the heater are accommodated in a vacuum container 1400.

Description

  Various aspects and embodiments of the present invention relate to a film forming apparatus.

  In recent years, an organic EL display using an organic electroluminescence (EL) element that emits light using an organic compound has attracted attention. An organic EL element used for an organic EL display has features such as self-emission, fast reaction speed, and low power consumption, and thus does not require a backlight. For example, a display unit of a portable device, etc. Application to is expected.

  The organic EL element is formed on a glass substrate and has a structure in which an organic layer is sandwiched between an anode (anode) and a cathode (cathode). When a voltage is applied to the anode and cathode of the organic EL element, holes (holes) are injected into the organic layer from the anode, and electrons are injected into the organic layer from the cathode. The injected holes and electrons recombine in the organic layer, and light emission occurs at this time.

  Here, a film forming apparatus for forming an organic EL element on a glass substrate heats and evaporates a vapor deposition material such as an organic material accommodated in a material container, and vapors of the generated vapor deposition material together with a transport gas are transported along a transport path. To the vapor deposition head. The vapor deposition material film forming apparatus deposits the vapor deposition material on the glass substrate by spraying a gas containing vapor of the vapor deposition material from the vapor deposition head (hereinafter, referred to as “vapor deposition material gas” as appropriate) and adhering it to the glass substrate. The material is deposited.

  Patent Document 1 discloses a film forming apparatus that includes a plurality of raw material containers that contain organic materials, and selectively puts the plurality of raw material containers into an organic EL molecule supply state. This film forming apparatus is disclosed that a heater is provided in each raw material container, and an organic material is evaporated by heating the heater.

JP 2006-291258 A

  By the way, it is considered that the conventional film forming apparatus performs evaporation / temperature control of the vapor deposition material by controlling the vapor deposition material container with a heater, but the film formation apparatus such as the container, the transport path, the vapor deposition head, etc. No consideration is given to improving the thermal uniformity of the vapor deposition material gas between these parts.

  A film forming apparatus according to one aspect of the present invention is transported via a material container in which a deposition material is accommodated, a transportation path for transporting a gas containing vapor of the deposition material evaporated in the material container, and the transportation path. A vapor deposition head for injecting a gas containing vapor of the vapor deposition material. In addition, the film forming apparatus includes a heating element that heats the material container, the transport path, and the vapor deposition head. The material container, the transport path, the vapor deposition head, and the heating element are accommodated in a vacuum container.

  According to various aspects and embodiments of the present invention, a film forming apparatus capable of improving the thermal uniformity of the vapor deposition material gas between the components of the film forming apparatus is realized.

FIG. 1 is a diagram schematically illustrating a film forming apparatus according to an embodiment. FIG. 2 is a perspective view showing a vapor deposition head according to an embodiment. FIG. 3 is a diagram illustrating an example of a completed state of an organic EL element that can be manufactured using the film forming apparatus according to the embodiment. FIG. 4 is a diagram schematically illustrating a gas supply source according to an embodiment. FIG. 5 is a cross-sectional view of a high temperature heat resistant valve according to an embodiment. FIG. 6 is a block diagram illustrating a control unit according to an embodiment. FIG. 7 is a diagram illustrating a flow of processing performed by the MFC control unit and the valve control unit according to an embodiment. Drawing 8 is a figure showing the state of the 1st-the 3rd steam generating part concerning one embodiment. FIG. 9 is a diagram schematically illustrating a gas supply source that generates a vapor of a dopant material and a vapor of a host material according to an embodiment. FIG. 10A is a diagram illustrating an outline of the overall configuration of the film forming apparatus according to the first embodiment. FIG. 10-2 is a diagram illustrating an outline of the configuration of the transport piping. FIG. 10C is a diagram illustrating an outline of the configuration of the material container. 10-4 is a figure which shows the modification of a material container. 10-5 is a figure which shows the modification of a material container. 10-6 is a figure which shows the modification of a material container. 10-7 is a figure which shows the outline | summary of the structure of the temperature measurement in transport piping. FIG. 10-8 is a diagram illustrating an outline of the configuration of the vapor deposition head. 10-9 is a figure which shows the outline | summary of a structure of a vapor deposition head. FIG. 10-10 is a diagram illustrating an outline of the configuration of the Post-Mix deposition head.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

  FIG. 1 is a diagram schematically illustrating a film forming apparatus according to an embodiment. FIG. 1 shows an XYZ orthogonal coordinate system. A film forming apparatus 10 shown in FIG. 1 includes a processing container 11 that defines a processing chamber 12 that houses a substrate S, and a stage 14 that holds the substrate S. One surface (film formation surface) of the substrate S faces downward in the vertical direction (Z direction), for example. That is, the film forming apparatus 10 is a face-down type film forming apparatus. The stage 14 may incorporate an electrostatic chuck that holds the substrate S. In another embodiment, the film forming apparatus may be a type in which a gas containing vapor of a deposition material is blown onto the film forming surface facing upward, that is, a face-up type film forming apparatus. A vacuum pump 27 is connected to the processing container 11 via a tube 12g, and the inside of the processing chamber 12 can be decompressed by the vacuum pump 27.

  The film forming apparatus 10 includes a vapor deposition head 16c having a nozzle 18c that sprays a gas G containing vapor of a vapor deposition material onto the substrate S. The film forming apparatus 10 may further include vapor deposition heads 16a, 16b, 16d, 16e, and 16f each having nozzles 18a, 18b, 18d, 18e, and 18f having the same structure as the nozzle 18c. From the nozzles 18a, 18b, 18d, 18e, and 18f, vapor deposition materials different from the vapor deposition material ejected from the nozzle 18c and different from each other may be ejected. Thereby, a plurality of types of films can be continuously deposited on the substrate S.

  Gas supply sources 20a to 20f for supplying a gas containing vapor of the vapor deposition material are connected to the vapor deposition heads 16a to 16f, respectively. For example, the gas G is supplied from the gas supply source 20c to the vapor deposition head 16c. For example, circular nozzles are formed at the tips of the nozzles 18a to 18f. A gas containing a vapor deposition material is injected from the injection port. Shutters 17a to 17f that can block the vapor deposition material may be arranged at positions facing the nozzles 18a to 18f, respectively. In FIG. 1, since the shutter 17c is open, the gas G ejected from the ejection port of the nozzle 18c reaches the substrate S. Since the shutters 17a, 17b, 17d, 17e, and 17f are closed, the gas ejected from the nozzles 18a, 18b, 18d, 18e, and 18f does not reach the substrate S. For example, the shutters 17a to 17f rotate around a rotation axis along the Y direction. Thereby, the shutters 17a to 17f can be arranged on the ejection openings of the nozzles 18a to 18f or can be retracted from the ejection openings as necessary.

  The film forming apparatus 10 includes a driving device 22 that drives the stage 14 in the X direction that intersects the Y direction. The film forming apparatus 10 may further include a rail 24. The rail 24 is attached to the inner wall of the processing container 11. The stage 14 is connected to the rail 24 by, for example, a support portion 14a. The stage 14 and the support portion 14 a are moved by the drive device 22 so as to slide on the rail 24. As a result, the substrate S moves in the X direction relative to the nozzles 18a to 18f. The board | substrate S will be face-to-face arrangement | sequence in order of opening of nozzle 18a-18f by moving to a X direction. An arrow A in FIG. 1 indicates the moving direction of the stage 14. Further, the processing container 11 of the film forming apparatus 10 includes gate valves 26a and 26b. The substrate S can be introduced into the processing chamber 12 through the gate valve 26 a formed in the processing container 11, and can be carried out of the processing chamber 12 through the gate valve 26 b formed in the processing container 11.

  FIG. 2 is a perspective view showing a vapor deposition head according to an embodiment. As shown in FIG. 2, the vapor deposition head 16 c may have a plurality of injection ports 14 c in one embodiment. From the plurality of injection ports 14c, the gas supplied by the gas supply source 20c is injected to the center of the axis in the Z direction. These injection ports 14c can be arranged in a direction (Y direction) intersecting the moving direction (X direction) of the stage 14.

  The vapor deposition head 16c has a heater 15 built therein. In one embodiment, the heater 15 heats the vapor deposition head 16c to a temperature at which the vapor deposition material supplied as vapor to the vapor deposition head 16c does not precipitate.

  FIG. 3 is a diagram illustrating an example of a completed state of an organic EL (Electro Luminescence) element that can be manufactured using the film forming apparatus according to the embodiment. The organic EL element D shown in FIG. 3 may include a substrate S, a first layer D1, a second layer D2, a third layer D3, a fourth layer D4, and a fifth layer D5. The substrate S is an optically transparent substrate such as a glass substrate.

  On one main surface of the substrate S, a first layer D1 is provided. The first layer D1 can be used as an anode layer. The first layer D1 is an optically transparent electrode layer, and may be made of a conductive material such as ITO (Indium Tin Oxide). The first layer D1 is formed by, for example, a sputtering method.

  On the 1st layer D1, the 2nd layer D2, the 3rd layer D3, and the 4th layer D4 are laminated | stacked in order. The second layer D2, the third layer D3, and the fourth layer D4 are organic layers. The second layer D2 can be a hole injection layer. The third layer D3 is a layer including a light emitting layer, and may include, for example, a hole transport layer D3a, a blue light emitting layer D3b, a red light emitting layer D3c, and a green light emitting layer D3d. Further, the fourth layer D4 may be an electron transport layer. The second layer D2, the third layer D3, and the fourth layer D4, which are organic layers, can be formed using the film forming apparatus 10.

  The second layer D2 can be made of, for example, TPD. The hole transport layer D3a can be composed of, for example, α-NPD. The blue light emitting layer D3b can be made of, for example, TPD. The red light emitting layer D3c can be formed of, for example, DCJTB. The green light emitting layer D3d can be made of, for example, Alq3. The fourth layer D4 can be made of, for example, LiF.

  A fifth layer D5 is provided on the fourth layer D4. The fifth layer D5 is a cathode layer and can be made of, for example, Ag, Al, or the like. The fifth layer D5 can be formed by a sputtering method or the like. The organic EL element D having such a configuration can be further sealed with an insulating sealing film made of a material such as SiN formed by microwave plasma CVD or the like.

  Next, details of the gas supply sources 20a to 20f will be described. Since the gas supply sources 20a to 20f may have the same configuration, in the following description, the gas supply source 20c will be described, and description of other gas supply sources will be omitted. FIG. 4 is a diagram schematically illustrating a gas supply source according to an embodiment. As shown in FIG. 4, the gas supply source 20c includes transport pipes L11, L21, L31, transport pipes (individual transport pipes) L12, L22, L32, transport pipes (common transport pipe) L40, and first steam generation. Unit 101, second steam generation unit 201, third steam generation unit 301, first storage container 120, second storage container 220, and third storage container 320.

  The first steam generation unit 101 is accommodated in a storage chamber R <b> 1 defined by the first storage container 120. Similarly, the second and third steam generators 201 and 301 are accommodated in the accommodating chambers R2 and R3 defined by the second and third accommodating containers 220 and 320, respectively. That is, the 1st-3rd steam generation parts 101-301 are each accommodated independently in storage chamber R1-R3.

  The first steam generation unit 101 includes a steam generation chamber 103 defined by a partition wall 102. In the steam generation chamber 103, a container 104 in which a vapor deposition material X is placed is disposed. The first steam generator 101 is provided with a heater 105. The heater 105 heats the vapor deposition material X put in the container 104. Thereby, in the 1st vapor generation part 101, the vapor | steam which contains the said vapor deposition material X from the vapor deposition material X generate | occur | produces. The container 104 is carried into the steam generation chamber 103 from the outside of the first storage container 120 and the first storage from the inside of the steam generation chamber 103 through the outlets provided in the partition wall 102 and the first storage container 120, respectively. Carrying out of the container 120 is possible.

  Similarly to the first steam generation unit 101, the second and third steam generation units 201 and 301 include steam generation chambers 203 and 303 defined by partition walls 202 and 302, and heaters 205 and 305, respectively. In addition, containers 204 and 304 in which the vapor deposition material X is placed are also arranged in the second and third steam generation units 201 and 301. Also in the second and third vapor generation units 201 and 301, vapor containing the vapor deposition material X is generated from the vapor deposition material X. Similarly to the container 104, the containers 204 and 304 are carried into the steam generation chambers 203 and 303 from outside the second and third storage containers 220 and 320, and the second and third from the steam generation chambers 203 and 303. Carrying out of the storage containers 220 and 320 is possible. The vapor deposition material X arrange | positioned in the 1st-3rd steam generation part 101,201,301, respectively may be the same kind vapor deposition material.

  Transport pipes L11, L21, and L31 are connected to the first to third steam generation units 101, 201, and 301, respectively. The transport pipes L11, L21, and L31 transport argon gas as a carrier gas into the steam generation chambers 103, 203, and 303 of the first to third steam generation units 101, 201, and 301, respectively. Note that another inert gas can be used instead of the argon gas. In addition, one end of the transport pipe L12, one end of L22, and one end of L32 are connected to the first to third steam generation units 101, 201, 301, respectively. The other end of the transport pipe L12, the other end of L22, and the other end of L32 are connected to the transport pipe L40. The transport pipes L12, L22, and L32 transport the argon gas introduced into the steam generation chambers 103, 203, and 303 and the vapor of the vapor deposition material X into the processing chamber 12. The transport pipe L40 transports the argon gas and the vapor of the vapor deposition material X transported into the processing chamber 12 by the transport pipes L12, 22, and 32 to the vapor deposition head 16c. That is, the vapor of the vapor deposition material X generated in the first to third vapor generation units 101, 201, 301 is transported to the vapor deposition head 16c together with the argon gas introduced into the vapor generation chambers 103, 203, 303.

  The transport pipe L11 is provided with a valve V102, an adiabatic transport pipe 140, a valve V103, a first MFC (mass flow controller) 110, and a valve V104 in order from the side closer to the first steam generation unit 101. The valves V102, V103, V104 are used for selectively blocking the flow of argon gas in the transport pipe L11. The first MFC 110 controls the flow rate of argon gas flowing through the transport pipe L11.

  The valve V102 and the heat insulating transport pipe 140 are provided in the transport pipe L11 in the first storage container 120. Heaters 115a, 115b, and 115c are attached to the transport pipe L11 between the heat insulating transport pipe 140 and the valve V102, the valve V102, and the transport pipe L11 between the valve V102 and the first steam generation unit 101, respectively. ing. The heaters 115a, 115b, and 115c can individually control the temperatures of the portions where the heaters are attached. Moreover, the transport pipe L11 and the valve V102 can be heated in the storage chamber R1 by these heaters so that the argon gas has a temperature corresponding to the vaporization temperature of the vapor deposition material X.

  Further, the heat insulating transport pipe 140 can suppress heat exchange between the transport pipe L11 outside the first storage container 120 and the transport pipe L11 in the first storage container 120. Therefore, the heat insulating transport pipe 140 has a thermal conductivity lower than that of the transport pipe L11. For example, the transport pipe L11 can be made of stainless steel, and the heat insulating transport pipe 140 can be made of quartz.

  The transport pipe L12 is provided with an adiabatic transport pipe 141 and a valve V101 in order from the side closer to the first steam generation unit 101. The valve V101 is provided in the transport pipe L12 in the processing chamber 12. The valve V101 is used to selectively shut off the supply of argon gas and vapor of the vapor deposition material X from the transport pipe L12 to the transport pipe L40. A heater (heating part) 125a and a heater (heating part) are respectively provided in the transport pipe L12 between the first steam generation part 101 and the heat insulation transport pipe 141 and the transport pipe L12 between the heat insulation transport pipe 141 and the valve V101. ) 125b is attached. With the heaters 125a and 125b, it is possible to individually control the temperatures of the portions to which these heaters are attached. Moreover, the transport pipe L12 can be heated by these heaters to a temperature at which the vapor deposition material X does not precipitate.

  Further, the heat insulating transport pipe 141 is provided in the transport pipe L <b> 12 in the first storage container 120. The heat insulating transport pipe 141 can suppress heat exchange between the transport pipe L12 outside the first storage container 120 and the transport pipe L12 in the first storage container 120. Therefore, the heat insulating transport pipe 141 has a thermal conductivity lower than that of the transport pipe L12. For example, the transport pipe L12 can be made of stainless steel, and the heat insulating transport pipe 141 can be made of quartz.

  Similarly to the transport pipe L11, the transport pipe L21 is also provided with a valve V202, an adiabatic transport pipe 240, a valve V203, a second MFC 210, and a valve V204 in order from the side closer to the second steam generation unit 201. The transport pipe L21, the valve V202, and the transport pipe L21 between the valve V202 and the second steam generation unit 201 are respectively provided with a heater 215a, a heater 215b, and a heater 215c. Is provided. The configuration and function of the valve V202, the adiabatic transport pipe 240, the valve V203, the second MFC 210, the valve V204, the heater 215a, the heater 215b, and the heater 215c are as follows. The functions and configurations of the heater 115b and the heater 115c are the same.

  The transport pipe L22 is also provided with an adiabatic transport pipe 241 and a valve V201 in order from the side closer to the second steam generation unit 201, similarly to the transport pipe L12. Further, a heater (heating unit) 225a and a heater (heating) are provided in the transport pipe L22 between the second steam generation unit 201 and the heat insulation transport pipe 241 and the transport pipe L22 between the heat insulation transport pipe 241 and the valve V201. Part) 225b. The configurations and functions of the adiabatic transport pipe 241, the valve V201, the heater 225a, and the heater 225b are the same as the configurations and functions of the adiabatic transport pipe 141, the valve V101, the heater 125a, and the heater 125b, respectively.

  Similarly to the transport pipe L11, the transport pipe L31 is also provided with a valve V302, an adiabatic transport pipe 340, a valve V303, a third MFC 310, and a valve V304 in this order from the side closer to the third steam generation unit 301. In addition, a heater 315a, a heater 315b, and a heater 315c are provided in the transport pipe L31, the valve V302, and the transport pipe L31 between the valve V302 and the third steam generation unit 301, respectively. Is provided. The configuration and function of the valve V302, the heat insulating transport pipe 340, the valve V303, the third MFC 310, the valve V304, the heater 315a, the heater 315b, and the heater 315c are as follows. The functions and configurations of the heater 115b and the heater 115c are the same.

  In addition, similarly to the transport pipe L32, the transport pipe L32 is also provided with a heat insulating transport pipe 341 and a valve V301 in order from the side closer to the third steam generation unit 301. Further, a heater (heating unit) 325a and a heater (heating) are provided in the transport pipe L32 between the third steam generation unit 301 and the heat insulation transport pipe 341 and the transport pipe L32 between the heat insulation transport pipe 341 and the valve V301. Part) 325b is provided. The configurations and functions of the adiabatic transport pipe 341, the valve V301, the heater 325a, and the heater 325b are the same as the configurations and functions of the adiabatic transport pipe 141, the valve V101, the heater 125a, and the heater 125b, respectively.

  The transport pipe L40 is provided with a heater (heating unit) 415 for heating the transport pipe L40. The heater 415 heats the transport pipe L40 to a temperature at which the vapor deposition material X that has become vapor does not precipitate. The heaters 125a-b, 225a-b, 325a-b, 415 can be controlled in temperature independently of each other.

  Further, the gas supply source 20c is provided with a decompression mechanism 500 that decompresses the storage chambers R1 to R3. More specifically, the decompression mechanism 500 includes decompression pipes L501, L511, L521, and L531, valves V107, V207, and V307, a turbo molecular pump (TMP) 501, and a dry pump (DP) 502.

  One end of the decompression pipe L511 is connected to the first storage container 120 so as to communicate with the storage chamber R1. Similarly, one end of the decompression pipe L521 and one end of L531 are connected to the second and third storage containers 220 and 320, respectively, so as to communicate with the storage chambers R2 and R3. The other ends of the decompression pipes L511, L521, and L531 are connected to the decompression pipe L501. The decompression pipe L501 is connected to the turbo molecular pump 501 and the dry pump 502. Due to the suction action of the turbo molecular pump 501 and the dry pump 502, the storage chamber R1 is decompressed via the decompression pipes L501 and L511, the accommodation chamber R2 is decompressed via the decompression pipes L501 and L521, and the decompression pipes L501 and L531 are used. The accommodation chamber R3 is decompressed.

  Valves V107, V207, and V307 are provided in the decompression pipes L511, L521, and L531, respectively. By opening and closing the valves V107, V207, and V307, the storage chambers R1 to R3 can be selectively depressurized independently. By reducing the pressure in the storage chambers R1 to R3, it is possible to suppress moisture and the like from adhering to the vapor deposition material X in the first to third steam generation units 101, 201, and 301. Moreover, the heat insulation effect of storage chamber R1-R3 is improved.

  In one embodiment, the film forming apparatus 10 may further include a QCM (Quartz Crystal Microbalance) sensor 30. The QCM sensor 30 can be installed in the vicinity of the substrate S disposed in the processing chamber 12. The QCM sensor 30 measures the amount of the vapor deposition material ejected from the vapor deposition head 16c.

  In one embodiment, the film forming apparatus 10 may further include a gas discharge system (discharge pipe) 600. The gas discharge system 600 individually and selectively discharges the gas from the first to third steam generation units 101, 201, and 301 to the outside instead of the vapor deposition head 16c. Specifically, the gas discharge system 600 includes discharge pipes L601, L611, L621, L631, valves V105, V205, V305, heat insulation pipes 142, 242, 342, and heaters 155a-c, 255a-c, 355a-c. Prepare.

  The discharge pipe L611 is branched from the transport pipe L12 between the heat insulating transport pipe 141 and the first steam generation unit 101. The discharge pipe L611 guides the argon gas and the vapor of the vapor deposition material X flowing through the transport pipe L12 to the outside of the first container 120, not the vapor deposition head 16c. Similarly to the discharge pipe L611, the discharge pipes L621 and L631 are branched from the transport pipes L22 and L32, respectively. The discharge pipes L621 and L631 guide the argon gas flowing in the transport pipes L22 and L32 and the vapor of the vapor deposition material X to the outside of the second and third storage containers 220 and 320, not the vapor deposition head 16c.

  The discharge pipe L611 is connected to the discharge pipe L601 outside the first container 120. Similarly, the discharge pipe L621 is connected to the discharge pipe L601 outside the second storage container 220. Similarly, the discharge pipe L631 is connected to the discharge pipe L601 outside the third storage container 320. The discharge pipe L601 discharges the argon gas and the vapor of the vapor deposition material X guided to the outside of the first to third storage containers 120, 220, and 320 to the outside of the film forming apparatus 10 instead of the vapor deposition head 16c.

  Valves V105, V205, and V305 are provided in the discharge pipes L611, L621, and L631, respectively. By opening and closing the valve V105, the gas from the first steam generation unit 101 can be selectively supplied to the vapor deposition head 16c via the transport pipes L12 and L40 or discharged via the discharge pipes L611 and L601. it can. Similarly, by opening / closing the valve V205, the gas from the second steam generation unit 201 is selectively supplied to the vapor deposition head 16c via the transport pipes L22 and L40, or discharged via the discharge pipes L621 and L601. can do. Similarly, the gas from the third steam generating unit 301 can be selectively supplied to the vapor deposition head 16c via the transport pipes L32 and L40 or discharged via the discharge pipes L631 and L601. .

  In the film forming apparatus 10, a heater 155a, a heater 155b, and 155c are provided in a discharge pipe L611, a valve V105, and a discharge pipe L611 between the valve V105 and the heat insulation pipe 142, respectively, between the transport pipe L12 and the valve V105. Is provided. Similarly, a heater 255a, heaters 255b, and 255c are provided in a discharge pipe L621 between the transport pipe L22 and the valve V205, a valve V205, and a discharge pipe L621 between the valve V205 and the heat insulation pipe 242, respectively. Yes. Similarly, a heater 355a, a heater 355b, and 355c are provided in the discharge pipe L631, the valve V305, and the discharge pipe L631 between the valve V305 and the heat insulation pipe 342, respectively, between the transport pipe 322 and the valve V305. It has been. With this configuration, it is possible to suppress the deposition material X from being deposited in each of the discharge pipes L611, L621, and L631 in the storage chambers R1, R2, and R3.

  Further, a heat insulating pipe 142 is provided between the discharge pipe L611 outside the first storage container 120 and the discharge pipe L611 inside the first storage container 120. The heat insulating pipe 142 suppresses heat exchange between the discharge pipe L611 outside the first storage container 120 and the discharge pipe L611 inside the first storage container 120. Similarly, a heat insulating pipe 242 is provided between the discharge pipe L621 outside the second storage container 220 and the discharge pipe L621 in the second storage container 220, and the heat insulation pipe 242 is connected to the second storage container 220. Heat exchange between the outer discharge pipe L621 and the discharge pipe L621 in the second container 220 is suppressed. Similarly, a heat insulating pipe 342 is provided between the discharge pipe L 631 outside the third storage container 320 and the discharge pipe L 631 in the third storage container 320, and the heat insulation pipe 342 is connected to the third storage container 320. Heat exchange between the outer discharge pipe L631 and the discharge pipe L631 in the third storage container 320 is suppressed. For example, the discharge pipes L611, 621, and 631 can be made of stainless steel, and the heat insulation pipes 142, 242, and 342 can be made of quartz.

  In one embodiment, the film forming apparatus 10 may further include a gas introduction system (gas introduction path) 700 that introduces a purge gas into the storage chambers R1 to R3. The gas introduction system 700 includes introduction pipes L701, L711, L721, and L731, and valves V106, V206, and V306. Nitrogen gas (purge gas) may be introduced into the introduction pipe L701. In addition, it can replace with nitrogen gas and can also use other gas. One end of the introduction pipe L711 is connected to the first storage container 120 so as to communicate with the storage chamber R1. The other end of the introduction pipe L711 is connected to the introduction pipe L701. Similarly, one ends of the introduction pipes L721 and L731 are connected to the second and third storage containers 220 and 320, respectively, so as to communicate with the storage chambers R2 and R3. The other ends of the introduction pipes L721 and L731 are connected to the introduction pipe L701.

  The introduction pipes L711, L721, and L731 guide the nitrogen gas flowing through the introduction pipe L701 into the storage chambers R1 to R3, respectively. The valves V106, V206, V306 are provided in the introduction pipes L711, L721, L731, respectively. By opening and closing the valve V106, the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R1 via the introduction pipe L711 or blocked. Similarly, by opening and closing the valve V206, the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R2 via the introduction pipe L721 or blocked. Similarly, by opening and closing the valve V306, the nitrogen gas flowing through the introduction pipe L701 can be selectively introduced into the storage chamber R3 via the introduction pipe L731 or blocked.

  In one embodiment, high-temperature heat-resistant valves may be used as the valves V101, V102, and V105 provided in the transport pipes L12 and L11 and the discharge pipe L611 that are heated by a heater, respectively. Similarly, high-temperature heat-resistant valves may be used as the valves V201, V202, and V205 provided in the transport pipes L22 and L21 and the discharge pipe L621 that are heated by the heater, respectively. Similarly, high temperature heat resistant valves may be used as the valves V301, V302, V305 provided in the transport pipes L32, L31 and the discharge pipe L631 respectively heated by the heater.

  An embodiment of a high temperature heat resistant valve will be described. FIG. 5 is a cross-sectional view of a high temperature heat resistant valve according to an embodiment. In the following description, the term “one end” is used as a term indicating the direction to indicate the direction in which the front member 901 is positioned with respect to the bonnet 902, and the term “other end” is used as a term indicating the opposite direction. Use. A high temperature heat resistant valve Y shown in FIG. 5 has a cylindrical valve box 905. The valve box 905 includes a front member 901, a central bonnet 902, and a rear member 903. The valve box 905 is hollow. A valve body 910 is accommodated inside the valve box 905. A heater 950 for heating the high temperature heat resistant valve Y is embedded in the front member 901 and the bonnet 902.

  The valve body 910 includes a valve body head portion 910a, a valve body body portion 910b, a valve shaft 910c, and a bellows 925. The valve body head portion 910a and the valve body portion 910b are connected by a valve shaft 910c. Specifically, the valve shaft 910c formed in a rod shape passes through the inner hole of the hollow valve body 910b. One end of the valve shaft 910c is fitted into a recess 910a1 provided at the center of the valve body head 910a. In the front member 901, a forward path 900a1 and a return path 900a2 of the transport pipe are formed. Further, a valve seat surface 900a3 with which the valve body head portion 910a abuts is provided at the opening edge of the forward path 900a1 in the front member 901.

  A protrusion 910b1 provided on the outer peripheral surface of the valve body 910b on the rear member 903 side is inserted into an annular recess 905a1 provided on the inner peripheral surface of the bonnet 902. In a state in which the protrusion 910b1 is inserted into the recess 905a1, a space in which the valve body 910b can slide in the longitudinal direction is provided in the recess 905a1. A heat-resistant buffer member 915 is disposed in a space in which the valve body part 910b can slide in the recess 905a1. As the buffer member 915, for example, a metal gasket can be used. The buffer member 915 separates the reduced pressure environment on the front member 901 side and the atmospheric pressure environment on the rear member 903 side in the inner hole of the hollow bonnet 902.

  One end of the bellows 925 is welded to the valve body head portion 910a, and the other end of the bellows 925 is welded to the outer peripheral surface of the valve body body portion 910b.

  The rear member 903 includes a drive unit 930 that moves the valve shaft 910c in the axial direction of the valve shaft 910c. When the drive unit 930 moves the valve shaft 910c to one end side, the valve body head portion 910a contacts the valve seat surface 900a3. On the other hand, the drive unit 930 moves the valve shaft 910c to the other end side, so that a gap is formed between the valve body head portion 910a and the valve seat surface 900a3.

  In the valve body 910, since the valve body part 910b and the valve body head part 910a are separated, the clearance (gap) between the valve body part 910b and the valve shaft 910c is controlled, so that the valve body part 910b can be opened and closed. The shift of the center position of the valve body 910 can be corrected. Further, a play 910a2 is provided in the recess 910a1 of the valve body head portion 910a in a state where the valve shaft 910c is inserted. Thereby, the slight shift | offset | difference of the axial direction of the axis | shaft of the valve body head 910a can be adjusted. Thereby, the valve body head portion 910a can be brought into contact with the valve seat surface 900a3 of the front member 901 without deviation. For this reason, the adhesiveness of the valve body head part 910a and the valve seat surface 900a3 can be improved, and a leak can be prevented. Further, even if the high-temperature heat-resistant valve Y is used in a high-temperature state or a low-temperature state, the influence of the metal thermal expansion can be absorbed by the separation structure of the valve body 910. Thereby, the leak of the valve body part at the time of opening and closing can be prevented effectively.

  The above-described high temperature heat resistant valve Y can be applied to the valves V101, V102, V105, V201, V202, V205, V301, V302, and V305.

  Further, the gas supply source 20c includes a controller that controls the valves V101, V102,..., The first to third MFCs 110 to 310, and the heaters 105, 205, and 305. FIG. 6 is a block diagram illustrating a control unit according to an embodiment. The control unit 800 illustrated in FIG. 6 can be, for example, a computing device having a CPU (Central Processing Unit) and a memory. The control unit 800 includes an MFC control unit 810, a valve control unit 820, and a heater control unit 830.

  In one embodiment, the MFC control unit 810 may control the first to third MFCs 110, 210, and 310 based on the measurement result of the QCM sensor 30. Specifically, the MFC control unit 810 sends a control signal for controlling the flow rate to the first to third MFCs 110, 210, and 310. When the amount of the vapor deposition material ejected from the vapor deposition head 16c is small, the MFC control unit 810 controls the first to third MFCs 110, 210, and 310 to control the amount of argon gas flowing through the transport pipes L11, L21, and L31. increase. On the other hand, when the amount of the vapor deposition material ejected from the vapor deposition head 16c is large, the MFC control unit 810 controls the first to third MFCs 110, 210, and 310, and argon gas flowing through the transport pipes L11, L21, and L31. Reduce the amount of. As described above, the amount of the vapor deposition material ejected from the vapor deposition head 16 c varies depending on the amount of argon gas supplied to the first to third vapor generation units 101, 201, 301.

  The valve control unit 820 controls opening and closing of the valves V101 to V107, V201 to V207, and V301 to V307. Specifically, the valve control unit 820 sends a control signal for controlling the opening and closing of the valves to the valves V101 to V107, V201 to V207, and V301 to V307.

  When the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported to the vapor deposition head 16c, the valve control unit 820 controls the valves V101, V102, V103, and V104 to an open state (distribution state). When the vapor deposition material X in the first steam generation unit 101 is exchanged, the valve control unit 820 controls the valves V101, V102, V103, and V104 to be closed (shut off state). When decompressing the inside of the storage chamber R1, the valve control unit 820 controls the valve V107 to be in an open state. On the other hand, when the inside of the storage chamber R1 is not depressurized, the valve control unit 820 controls the valve V107 to be closed. When the argon gas or steam in the steam generation chamber 103 is discharged through the gas discharge system 600, the valve control unit 820 controls the valve V105 to be in an open state. On the other hand, when argon gas or steam in the steam generation chamber 103 is not discharged, the valve control unit 820 controls the valve V105 to be closed. When nitrogen gas is introduced into the storage chamber R1 via the gas introduction system 700, the valve control unit 820 controls the valve V106 to be in an open state. On the other hand, when nitrogen gas is not introduced into the storage chamber R1, the valve control unit 820 controls the valve V106 to be closed.

  Similarly, when the vapor of the vapor deposition material X generated in the second vapor generation unit 201 is transported to the vapor deposition head 16c, the valve control unit 820 controls the valves V201, V202, V203, and V204 to be in an open state. When replacing the vapor deposition material X in the second steam generation unit 201, the valve control unit 820 controls the valves V201, V202, V203, and V204 to be closed. When decompressing the inside of the storage chamber R2, the valve control unit 820 controls the valve V207 to be in an open state. On the other hand, when the inside of the storage chamber R2 is not depressurized, the valve control unit 820 controls the valve V207 to be closed. When the argon gas or steam in the steam generation chamber 203 is discharged via the gas discharge system 600, the valve control unit 820 controls the valve V205 to be in an open state. On the other hand, when the argon gas and the steam in the steam generation chamber 203 are not discharged, the valve control unit 820 controls the valve V205 to be closed. When nitrogen gas is introduced into the storage chamber R2 via the gas introduction system 700, the valve control unit 820 controls the valve V206 to be in an open state. On the other hand, when nitrogen gas is not introduced into the storage chamber R2, the valve controller 820 controls the valve V206 to be closed.

  Similarly, when the vapor of the vapor deposition material X generated in the third vapor generation unit 301 is transported to the vapor deposition head 16c, the valve control unit 820 controls the valves V301, V302, V303, and V304 to an open state. When replacing the vapor deposition material X in the third steam generation unit 301, the valve control unit 820 controls the valves V301, V302, V303, and V304 to be closed. When decompressing the inside of the storage chamber R3, the valve control unit 820 controls the valve V307 to be in an open state. On the other hand, when the inside of the storage chamber R3 is not decompressed, the valve control unit 820 controls the valve V307 to be closed. When the argon gas or the steam in the steam generation chamber 303 is discharged through the gas discharge system 600, the valve control unit 820 controls the valve V305 to be in an open state. On the other hand, when argon gas or steam in the steam generation chamber 303 is not discharged, the valve control unit 820 controls the valve V305 to be closed. When nitrogen gas is introduced into the storage chamber R3 via the gas introduction system 700, the valve control unit 820 controls the valve V306 to be in an open state. On the other hand, when nitrogen gas is not introduced into the storage chamber R3, the valve control unit 820 controls the valve V306 to be closed.

  The heater control unit 830 controls on / off (heating state / non-heating state) of the heaters 105, 205, and 305 provided in the first to third steam generation units 101, 201, and 301. Specifically, the heater control unit 830 sends a control signal for controlling heater ON / OFF to the heaters 105, 205, and 305.

  Next, the flow of processing in the valve control unit 820 and the heater control unit 830 will be described. The valve control unit 820 and the heater control unit 830 include a path for supplying the vapor generated by the first vapor generation unit 101 to the vapor deposition head 16c, and a path for supplying the vapor generated by the second vapor generation unit 201 to the vapor deposition head 16c. The path for supplying the vapor generated by the third vapor generation unit 301 to the vapor deposition head 16c is sequentially switched. That is, the valve control unit 820 and the heater control unit 830 always supply the vapor containing the vapor of the vapor deposition material X generated in any one of the first to third vapor generation units 101, 201, and 301 to the vapor deposition head 16c. As described above, each part is controlled.

  FIG. 7 is a diagram illustrating a flow of processing performed by the MFC control unit and the valve control unit according to an embodiment. In FIG. 7, the horizontal axis represents the time axis, and the vertical axis represents the control state of the valves and heaters. Moreover, FIG. 8 is a figure which shows the state of the 1st-3rd steam generation part which concerns on one Embodiment. In FIG. 8, the horizontal axis represents the time axis, and the vertical axis represents the temperature of each steam generating unit. First, at time t1, the heater control unit 830 controls the heater 105 to a heated state (on) and the other heaters to a non-heated state (off). In addition, at time t1, the valve control unit 820 controls the valves V102 to V105, V107, V207, and V307 to be in an open state, and controls the other valves to be in a closed state. When the heater 105 is in a heated state, the vapor of the vapor deposition material X starts to be generated in the first vapor generation unit 101. Since the valves V102 to V105 are in the open state, the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported by the argon gas and discharged from the gas discharge system 600. Immediately after the heating of the vapor deposition material X, a sufficient amount of vapor may not be generated. For this reason, the steam immediately after the start of heating is discharged from the gas discharge system 600. In addition, since the valves V107, V207, and V307 are in the open state, the inside of the storage chambers R1 to R3 is decompressed.

  At time t <b> 2 when the vapor deposition material X in the first steam generation unit 101 is heated to a desired temperature, the valve control unit 820 controls the valve V <b> 101 to an open state and controls the valve V <b> 105 to a closed state. Thereby, the vapor | steam of the vapor deposition material X generated in the 1st vapor generation part 101 is conveyed to the vapor deposition head 16c by argon gas, and is injected toward the board | substrate S from the vapor deposition head 16c. By controlling the valve V105 to be in a closed state, the discharge of the gas in the first steam generation unit 101 through the gas discharge system 600 is stopped.

  The heater control unit 830 controls the heater 205 to a heating state (ON) at a time t3 that is a predetermined time before the vapor deposition material X in the first vapor generation unit 101 is reduced by evaporation and the replacement time is reached. Further, at time t3, the valve control unit 820 controls the valves V202 to V205 to the open state. In one embodiment, the remaining amount of the vapor deposition material X in the first vapor generation unit 101 can be estimated based on the elapsed time from the start of heating of the vapor deposition material X, or can be measured using a laser beam or the like. . Since the valves V202 to V205 are in the open state, the vapor of the vapor deposition material X generated in the second vapor generation unit 201 is transported by the argon gas and discharged from the gas discharge system 600. Since the heating of the vapor deposition material X in the second vapor generation unit 201 is started immediately before use, the vapor deposition material X can be prevented from being deteriorated by heating.

  At time t4 when the vapor deposition material X in the first steam generation unit 101 is reduced due to evaporation and the replacement time is reached, the valve control unit 820 controls the valves V101 to V104, V107, and V205 to be closed, and the valves V106 and V201 to be closed. Control to open state. In addition, at time t4, the heater control unit 830 controls the heater 105 to a non-heated state (off). The valve V201 is controlled to be in an open state and the valve V101 is controlled to be in a closed state, whereby the vapor of the vapor deposition material X generated in the second vapor generation unit 201 is transported to the vapor deposition head 16c by argon gas. Nitrogen gas is introduced into the storage chamber R1 of the first steam generation unit 101 by controlling the valve V106 to be in the open state. Thereby, the temperature of the 1st steam generation part 101 can be reduced rapidly. After the temperature in the first steam generation unit 101 decreases, the container 104 is taken out, and the container 104 in which a new vapor deposition material X is placed is carried into the first steam generation unit 101.

  The heater control unit 830 controls the heater 305 to be in a heated state (ON) at a time t5 that is a predetermined time before the vapor deposition material X in the second vapor generation unit 201 is reduced due to evaporation and the replacement time is reached. At time t5, the valve control unit 820 controls the valves V302 to V305 to be in an open state. Since the valves V302 to V305 are in the open state, the vapor of the vapor deposition material X generated in the third vapor generation unit 301 is transported by the argon gas and discharged from the gas discharge system 600.

  At time t6 when the vapor deposition material X in the second steam generation unit 201 is reduced due to evaporation and the replacement time is reached, the valve control unit 820 controls the valves V201 to V204, V207, and V305 to be closed and the valves V206 and V301 to be closed. Control to open state. At time t6, the heater control unit 830 controls the heater 205 to a non-heated state (off). By controlling the valve V301 to be in the open state and the valve V201 to be in the closed state, the vapor of the vapor deposition material X generated in the third vapor generation unit 301 is transported to the vapor deposition head 16c by argon gas. Nitrogen gas is introduced into the storage chamber R2 of the second steam generation unit 201 by controlling the valve V206 to be in the open state. Thereby, the temperature of the 2nd steam generation part 201 can be reduced rapidly. After the temperature in the second steam generation unit 201 is lowered, the container 204 is taken out, and the container 204 containing the new vapor deposition material X is carried into the second steam generation unit 201.

  The heater control unit 830 controls the heater 105 to a heated state (ON) at a time t7 that is a predetermined time before the vapor deposition material X in the third steam generation unit 301 is reduced due to evaporation and the replacement time is reached. Further, at time t7, the valve control unit 820 controls the valves V102 to V105 and 107 to the open state and controls the valve V106 to the closed state. Since the valves V102 to V105 are in the open state, the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported by the argon gas and discharged from the gas discharge system 600.

  At time t8 when the vapor deposition material X in the third steam generating unit 301 is reduced due to evaporation and the replacement time is reached, the valve control unit 820 controls the valves V301 to V304, V307, and V105 to be closed, and the valves V306 and V101 are closed. Control to open state. In addition, at time t8, the heater control unit 830 controls the heater 305 to a non-heated state (off). By controlling the valve V101 to the open state and the valve V301 to the closed state, the vapor of the vapor deposition material X generated in the first vapor generation unit 101 is transported to the vapor deposition head 16c by the argon gas. Nitrogen gas is introduced into the storage chamber R3 of the third steam generation unit 301 by controlling the valve V306 to be in the open state. Thereby, the temperature of the 3rd steam generation part 301 can be reduced rapidly. After the temperature in the 3rd steam generation part 301 falls, the container 304 is taken out and the container 304 in which the new vapor deposition material X was put in is carried in in the 3rd steam generation part 301. FIG.

  After time t8, the valve control unit 820 and the heater control unit 830 repeatedly perform the processes after time t2.

  Hereinafter, the function and effect of the film forming apparatus will be described. Hereinafter, when referring to the configuration of the gas supply sources 20a to 20f, the gas supply source 20c will be representatively described using the reference numerals of the drawings of the gas supply source 20c. In the above-described film forming apparatus 10, the first to third vapor generation units 101, 201, and 301 that generate vapor of the same kind of vapor deposition material X are connected to the vapor deposition head 16 c. Accordingly, in the gas supply source 20c, even when the vapor deposition material X of one vapor generation unit is exchanged, the gas containing the vapor of the vapor deposition material X is supplied from the other vapor generation unit to the vapor deposition head 16c. Can do. Therefore, according to the film forming apparatus 10, the throughput can be increased.

  In addition, the first to third steam generation units 101, 201, and 301 of the gas supply source 20c are individually housed in housing chambers R1 to R3 that can be individually decompressed and separated from each other. Therefore, for example, even if the temperature of the first steam generation unit 101 is decreased during the exchange of the vapor deposition material X of the first steam generation unit 101, the decrease in the temperature is the temperature of the second and third steam generation units 201 and 301. Can be suppressed. Therefore, the throughput of the film forming process is increased. Moreover, since it can suppress that the temperature influences the 2nd, 3rd steam generation parts 201 and 301 during use of the 1st steam generation part 101, it can control degradation of vapor deposition material X by prolonged heating. it can. Furthermore, when the heat-insulating transport pipes 141, 241, and 341 are provided, heat transfer from the vapor deposition head 16c to the vapor generation chambers 103, 203, and 303 can be further suppressed, so that deterioration of the vapor deposition material X can be suppressed. .

  Further, in one embodiment, a gas introduction system 700 capable of individually controlling the supply of nitrogen gas to the storage chambers R1 to R3 may be provided. Thereby, the temperature of the 1st-3rd steam generation part 101,201,301 which replaces vapor deposition material X can be reduced more quickly.

  In one embodiment, transport pipes L12, L22, and L32 are connected to first to third steam generation units 101, 201, and 301, respectively, and extend in storage chambers R1 to R3, respectively. The transport pipe L40 communicates with the transport pipes L12, L22, L32 and extends in the processing chamber and is connected to the vapor deposition head 16c. Thus, since the transport pipes L12, L22, and L32 extend in the accommodating chambers R1 to R3 that can be decompressed, fluctuations in the temperature of the transport pipes L12, L22, and L32 can be suppressed. As a result, the deposition of the vapor deposition material X in the transport pipes L12, L22, L32 can be suppressed. Moreover, since it is not necessary to raise the temperature of the transport pipes L12, L22, and L32 more than necessary, the quality deterioration of the vapor deposition material X can be suppressed.

  In one embodiment, since processing room 12 and storage room R1-R3 are separated, heaters 115a-c, 125a-b, 155a-c, 215a-c, 225a in storage room R1-R3 are separated. -B, 255a-c, 315a-c, 325a-b, 355a-c can be prevented from flowing into the processing chamber 12.

  Moreover, in one embodiment, since the gas discharge system 600 connected to the transport pipes L12, L22, and L32 is provided, for example, before the vapor deposition material X is replaced in the first steam generation unit 101, the second steam generation unit In 201, the generation of the gas containing the vapor of the vapor deposition material X can be started, and the gas can be discharged to the gas discharge system 600. As a result, for example, the vapor generating unit that supplies gas to the vapor deposition head 16c can be efficiently switched from the first vapor generating unit 101 where the vapor deposition material X is exchanged to the second vapor generating unit 201. .

  Further, in one embodiment, by using a high temperature heat resistant valve as the valves V101, V102, V105, V201, V202, V205, V301, V302, V305, for example, switching between passage and shutoff of high temperature gas such as 300 degrees or more is switched. be able to.

  In one embodiment, vapors of different vapor deposition materials may be generated in a plurality of vapor generating units provided in one gas supply source. FIG. 9 is a diagram schematically illustrating a gas supply source that generates a vapor of a dopant material and a vapor of a host material according to an embodiment. In addition, the gas supply source 20c shown in FIG. 9 has a fourth steam generator 401 added to the gas supply source 20c described with reference to FIG. Only the newly added configuration will be described below. The gas supply source 20c further includes transport pipes L41 and L42, a fourth steam generation unit 401, and a fourth storage container 420.

  The fourth steam generation unit 401 is accommodated in a storage chamber R4 defined by the fourth storage container 420. The fourth steam generation unit 401 includes a steam generation chamber 403 defined by a partition wall 402. In the steam generation chamber 403, a container 404 in which the vapor deposition material Z is placed is disposed. The fourth steam generation unit 401 is provided with a heater 405. The heater 405 heats the vapor deposition material Z placed in the container 404. Thereby, in the 4th vapor generation part 401, the vapor | steam containing the said vapor deposition material Z is generate | occur | produced from the vapor deposition material Z. FIG.

  The configuration of the transport pipes L41 and L42 is the same as the configuration of the transport pipes L11 and L12. The configuration of the valve V402, the heat insulating transport pipe 440, the valve V403, the fourth MFC 410, the valve V404, and the heaters 415a to c provided in the transport pipe L41 is the same as that of the valve V102, the heat insulating transport pipe 140 provided in the transport pipe L11, The configurations of the valve V103, the first MFC 110, the valve V104, and the heaters 115a to 115c are the same. In addition, the configurations of the heat insulating transport pipe 441, the valve V401, and the heaters (heating units) 425a to 425b provided in the transport pipe L42 are the same as those of the heat insulating transport pipe 141, the valve V101, and the heaters 125a to 125b provided in the transport pipe L12. It is the same as that of the structure. Further, the configurations of the discharge pipe L641, the valve V405, the heat insulation pipe 442, and the heaters 455a to c provided in the discharge pipe L641 are the same as the configurations of the discharge pipe L611, the valve V105, the heat insulation pipe 142, and the heaters 155a to 155c. is there. The configuration of the introduction pipe L741 and the valve V406 provided in the introduction pipe L741 is the same as the configuration of the introduction pipe L711 and the valve V106. Further, the configuration of the decompression pipe L541 and the valve V407 provided in the decompression pipe L541 is the same as the configuration of the decompression pipe L511 and the valve V107.

  The same kind of host material is used for the vapor deposition material X disposed in the first to third steam generation units 101, 201, 301. A dopant material is used for the vapor deposition material Z disposed in the fourth vapor generation unit 401.

  In one embodiment, the QCM sensor 30a may be arranged in the accommodation room R4. In this case, the vapor of the vapor deposition material Z flowing through the transport pipe L42 is applied to the QCM sensor 30a, and the amount of the vapor deposition material Z is measured by the QCM sensor 30a. Based on this measurement result, the fourth MFC 410 can control the flow rate of the argon gas sent to the fourth steam generation unit 401.

  The vapor deposition material X in the first to third steam generation units 101, 201, and 301 is sequentially replaced as in the above-described embodiment.

  In this embodiment, the gas supply source 20c includes a fourth vapor generation unit 401 that generates a vapor of a dopant material, and a first to third vapor generation units 101, 201, and 301 that generate a vapor of the same type of host material. Can be provided. The host material is used in a larger amount than the dopant material. Therefore, by increasing the number of steam generating parts for the host material than the number of steam generating parts for the dopant material, the host material is supplied in a larger amount than the amount of the dopant material while suppressing deterioration in the quality of the host material. can do.

  In the embodiment described with reference to FIG. 9, there may be one or more vapor generation units that generate vapor of the dopant material. Also in this case, the number of vapor generating parts that generate the vapor of the host material can be made larger than the number of vapor generating parts that generate the vapor of the dopant material.

  In each of the above embodiments, all of the gas supply sources 20a to 20f are provided with a plurality of steam generation units as described with reference to FIGS. 4 and 9, but among the gas supply sources 20a to 20f, It suffices that at least one gas supply source includes a plurality of steam generation units. Further, the number of steam generation units provided in the gas supply source is not limited to three or four as described with reference to FIGS. 4 and 9, and may be two or more.

  Example 1 will be described below. The following Example 1 is based on the device configuration of each of the above embodiments.

  Example 1 is an example of a heater structure related to temperature control of piping such as the heaters 415 and 225 of FIG. Further, Example 1 relates to the black plating of a Cu heat block that surrounds the SUS pipe from the outside with the cartridge heater interposed therebetween. In the first embodiment, the surface of the SUS pipe and the inner surface of the heat block are black-plated to increase the radiant heat transfer rate and make the temperature distribution of the SUS pipe uniform. In Example 1, the outside of the heat block is Ni-plated and has a low emissivity. This is a superordinate concept. Each of the following structures also includes this content. This content is disclosed, for example, in FIG.

  Moreover, Example 1 provides unevenness | corrugation in the bottom part of a material container, increases a surface area, and makes a heater side surface black plating. It is a structure which has an unevenness | corrugation in the lower part of the circular shaped dish of FIG. 10-3. There is an uneven shape on the corresponding Cu block side of the heater side. As a result, the heat transfer coefficient is improved, and high temperature control is facilitated.

  In the first embodiment, the temperature of the SUS portion where the vapor deposition material flows from the outside is also controlled by radiant heat. However, the nozzle portion has a structure in which different materials are mixed, and the temperatures are different. For example, as shown in FIG. 10-10 or the like, a water wall is provided between the gas supply units in order to control temperature interference. Further, for example, as shown in FIG. 10-9, if radiation heat at the tip of the vapor deposition head propagates to the vapor deposition mask, the mask is deformed. It is the structure which prevents it from affecting.

  Further, in the first embodiment, the shape of the material container into which the organic EL material is introduced, the shape of the evaporation material transport passage partition wall where the material container is installed and its surface state, and the material and surface state of the heater heat transfer member are respectively transferred to the heat. In consideration of the rate, it is intended to improve efficiency, heat uniformity, and transfer rate.

  According to Example 1, since the temperature uniformity of the material container (organic material) / transport route is high, the evaporation control becomes easy. Moreover, according to Example 1, since temperature controllability is high, it can be suppressed to the minimum necessary temperature, and material deterioration and deposition to unnecessary portions are also suppressed. Moreover, according to Example 1, the input electric power to the heater can be efficiently transmitted to the organic material. In addition, heating and cooling time can be shortened, and waste of materials (material use efficiency) can be saved (maintenance time can also be shortened).

  Example 1 will be specifically described below.

  First, the prior art will be described. In the organic EL vapor deposition apparatus of the prior art, the temperature controllability of the material container, the transport path, and the gas contact part has a great influence on the film quality, film deposition rate stability, maintainability, and the like. Example 1 discloses each part heating structure of the organic EL vapor deposition apparatus excellent in temperature controllability.

  Conventional containers and transport paths have a basic structure enclosed by a heater in a vacuum, but the heat transfer control between each member is insufficient, and the temperature control speed, uniformity, and heater power efficiency for the heater settings are sufficient. I couldn't say that.

  On the other hand, the content of Example 1 is demonstrated more concretely below.

  1. When the temperature becomes high (from 200 ° C.), heat insulation becomes difficult in the atmosphere. A large heat flow is generated by contact, air convection heat transfer, etc., resulting in fluctuations in temperature distribution and power efficiency. Therefore, the heating source (heater) and the object to be heated are all configured in the vacuum chamber.

  This point will be described in detail. FIG. 10A is a diagram illustrating an outline of the overall configuration of the film forming apparatus according to the first embodiment. As illustrated in FIG. 10A, the film forming apparatus 1000 includes a material container 1100, a transport pipe 1200, and a vapor deposition head 1300. The material container 1100 is a container for storing a vapor deposition material. The transport pipe 1200 is a transport path for transporting a gas containing vapor of the vapor deposition material evaporated in the material container 1100, and is formed of, for example, SUS. The vapor deposition head 1300 injects the vapor deposition material gas transported through the transport pipe 1200 toward the substrate 1500.

  As illustrated in FIG. 10A, the material container 1100, the transport pipe 1200, and the vapor deposition head 1300 are covered with soaking blocks 1110, 1210, and 1310, respectively. The soaking blocks 1110, 1210, and 1310 are formed of a material (for example, Cu) having a higher thermal conductivity than the material (SUS) of the transport pipe 1200, for example. Although not illustrated in FIG. 10A, the film forming apparatus 1000 includes a heating element such as a heater that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300. For example, the heater is embedded in the soaking blocks 1110, 1210, and 1310 to heat the material container 1100, the transport pipe 1200, and the vapor deposition head 1300, respectively.

  In other words, the soaking blocks 1110, 1210, and 1310 are provided so as to cover the heating element that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300. A heating element that heats the material container 1100, the transport pipe 1200, and the vapor deposition head 1300 is housed in a vacuum container 1400. Note that the substrate 1500 is also accommodated in the vacuum vessel 1400.

  In the film forming apparatus 1000 of this embodiment, the material container 1100, the transport pipe 1200, the vapor deposition head 1300, and the heating element for heating these components are accommodated in the vacuum container 1400. Therefore, the material container 1100, the transport pipe 1200, And the thermal uniformity between the vapor deposition heads 1300 can be improved. In this embodiment, the gas flow vapor deposition apparatus that connects the material container 1100 and the vapor deposition head 1300 with the transport pipe 1200 is shown, but the present invention is not limited thereto. For example, the present invention can be similarly applied to a gas flow vapor deposition apparatus having a transport path (transport path) for transporting a gas containing vapor of a vapor deposition material evaporated in the material container 1100 to the vapor deposition head 1300.

2. Heating source (heater) ⇒ evaporation material transport path partition ⇒ heat transfer to the material container eliminates contact with parts with temperature differences so that radiant heat transfer is the basis, and the only support that supports parts is point contact (and (Securing a minimum cross section and a certain distance), and the material should be of low thermal conductivity. (Example: SUS material, etc.)

  3. In order to make the heat transfer from the heater to the transport path uniform, the heater is brought into contact with a material having excellent heat conduction, thereby achieving high-speed heat conduction and soaking inside the member. (Soaking block: example Cu)

  4). Even if the transport path material is a material with low thermal conductivity (eg, SUS), the outer surface of the transport path is surrounded by the above-mentioned soaking block without any gaps, so that the heat transfer with the outside can be controlled with the soaking block. Since it is only radiation, the transportation route is soaked.

  This point will be described in detail. FIG. 10-2 is a diagram illustrating an outline of the configuration of the transport piping. FIG. 10B is a cross-sectional view of the transport pipe 1200 and parts provided around the transport pipe 1200.

  As shown in FIG. 10-2, the soaking block 1210 is provided so as to cover the periphery of the transport pipe 1200. The soaking block 1210 is provided so as to cover the periphery of the heater 1220. A plurality of protrusions 1202 are formed on the pipe outer peripheral surface of the transport pipe 1200 at intervals, and the plurality of protrusions 1202 and the inner surface of the soaking block 1210 are in contact with each other. In other words, the transport pipe 1200 is supported by the soaking block 1210 by the protrusion 1202 in a point contact. Since the soaking block 1210 is formed of a material (for example, Cu) having a higher thermal conductivity than the transport pipe 1200, for example, the heat from the heater 1220 can be efficiently transferred to the transport pipe 1200.

  Here, in the soaking block 1210, the inner surface 1212 facing the transport pipe 1200 is formed to have a higher emissivity than the outer surface 1214 of the soaking block 1210 on the vacuum container 1400 side. For example, the inner surface 1212 of the soaking block 1210 has an emissivity of about 0.8 to 0.9 by black nickel plating. Further, the outer surface 1214 of the soaking block 1210 is formed with an emissivity of about 0.1 to 0.2 by nickel plating.

  Thus, by forming the emissivity of the inner surface 1212 of the soaking block 1210 to be higher than the emissivity of the outer surface 1214 of the soaking block 1210, the radiant heat is efficiently radiated from the heater 1220 to the transport pipe 1200 via the soaking block 1210. Can transfer heat.

  Further, the transport pipe 1200 is formed such that the outer surface 1204 facing the soaking block 1210 has a higher emissivity than the outer surface 1214 of the soaking block 1210 on the vacuum vessel 1400 side. For example, the outer surface 1204 of the transport pipe 1200 is formed with an emissivity of about 0.8 to 0.9 by black nickel plating.

  In this way, by forming the emissivity of the outer surface 1204 of the transport pipe 1200 higher than the emissivity of the outer surface 1214 of the soaking block 1210, the radiant heat is efficiently transferred from the heater 1220 to the transport pipe 1200 via the soaking block 1210. Heat can be transferred.

  5. In addition, even in the vacuum chamber, if there is a temperature difference between the chamber heat and the soaking block, a relatively large amount of heat is radiated and radiated from the soaking block to the chamber wall. Rate surface treatment. Further, the efficiency can be further improved by providing a heat shield (reflector) between the chamber walls.

  This point will be described in detail. As illustrated in FIG. 10B, a heat shielding plate 1230 that shields heat is provided between the soaking block 1210 and the vacuum vessel 1400. By providing the heat shielding plate 1230, heat generated by the heater 1220 can be suppressed from being transferred to the outside of the soaking block 1210. As a result, by providing the heat shielding plate 1230, heat can be efficiently transferred from the heater 1220 to the transport pipe 1200 via the soaking block 1210.

  6). In order to improve the radiant heat transfer efficiency between the soaking block and the transport path, the components are formed in an uneven fin shape, and the arrangement area is maximized. (Radiation heat transfer form factor: surface area)

  7). Further, the heat transfer coefficient is improved by performing a surface treatment so that both the fin-shaped surfaces (even when not fin-shaped) have high emissivity.

  8). Similarly, the surface area UP and the surface emissivity control by the fin shape also hold between the transportation path material containers.

  This point will be described in detail. Here, as an example, in order to improve the radiant heat transfer efficiency between the material container 1100 and the soaking block 1110 covering the material container 1100, the opposing surfaces of the material container 1100 and the soaking block 1110 are mutually opposed. Shows an example in which irregularities are formed. FIG. 10C is a diagram illustrating an outline of the configuration of the material container.

  As illustrated in FIG. 10C, the material container 1100 is covered with a soaking block 1110, and a heater 1120 is embedded in the soaking block 1110. The material container 1100 is made of, for example, SUS. The soaking block 1110 is made of Cu, for example. The heat generated in the heater 1120 is radiatively transferred to the material container 1100 via the soaking block 1110 to heat / evaporate the organic material stored in the material container 1100.

  Here, as shown in FIG. 10-3, the material container 1100 and the soaking block 1110 have irregularities formed on surfaces facing each other. More specifically, irregularities 1102 are formed on the lower surface of the material container 1100, and irregularities 1112 are formed on the surface of the soaking block 1110 that faces the lower surface of the material container 1100. Thereby, the material container 1100 and the soaking block 1110 are arranged so that the irregularities 1102 and 1112 formed on each of them are engaged with each other.

  Thus, by forming irregularities on the surfaces of the material container 1100 and the soaking block 1110 that face each other, the surface areas of the surfaces that face each other can be increased. As a result, the amount of radiant heat transferred from the heater 1120 to the material container 1100 via the soaking block 1110 can be increased, so that the material container 1100 can be efficiently heated. A heat shielding plate 1130 is provided between the soaking block 1110 and the vacuum vessel 1400. Thereby, it is possible to suppress the heat generated in the heater 1120 from being transferred to the outside of the soaking block 1110, so that heat can be further efficiently transferred from the heater 1120 to the material container 1100 via the soaking block 1110. Heat can be transferred.

  In the above example, an example in which the unevenness is formed on the surfaces of the material container 1100 and the soaking block 1110 that face each other is not limited thereto. For example, irregularities can be formed on the mutually opposing surfaces of the transport pipe 1200 and the soaking block 1210, and irregularities can be formed on the mutually opposing surfaces of the vapor deposition head 1300 and the soaking block 1310.

  9. Organic materials placed under low pressure are also generally low heat conductors, so the inner surface of the material container is provided with fins or partitions to increase the contact area with the organic material (reduce the heat transfer distance between material grains). As a result, the temperature uniformity in the charged material is improved, and a stable evaporation amount can be obtained.

  This point will be described in detail. 10-4 and 10-5 are diagrams showing a modification of the material container. As illustrated in FIG. 10-4, the material container 1100 includes a partition plate 1104 that partitions a space 1106 that stores the vapor deposition material of the material container 1100 into a lattice shape. By providing the partition plate 1104, the space 1106 is partitioned into a plurality of small spaces.

  Similarly to the material container 1100, the partition plate 1104 is heated by the heat from the heater 1120. The vapor deposition material is heated not only by the heat from the bottom and side surfaces of the material container 1100 but also by the heat from the partition plate 1104 in the material container 1100. Thus, by providing the partition plate 1104, the contact area with the vapor deposition material can be increased, so that the heat uniformity in the vapor deposition material is improved, and a stable evaporation amount can be obtained.

  As shown in FIG. 10-5, the material container 1100 can also include a partition plate 1108 that divides the space 1106 for accommodating the vapor deposition material of the material container 1100 into a circular shape. By providing the partition plate 1108, the space 1106 is partitioned into a plurality of small spaces.

  Similar to the material container 1100, the partition plate 1108 is heated by heat from the heater 1120. In the material container 1100, the vapor deposition material is heated not only by heat from the bottom and side surfaces of the material container 1100 but also by heat from the partition plate 1108. In this manner, by providing the partition plate 1108, the contact area with the vapor deposition material can be increased, so that the heat uniformity in the vapor deposition material is improved and a stable evaporation amount can be obtained.

10. Although there are several candidates for the above emissivity control method, it is necessary to satisfy the necessary functions.
(1) Organic materials have excellent degassing characteristics because they tend to deteriorate at high temperatures when moisture, oxygen, etc. are present. That is, the method of roughening the surface roughness, the one having many surface areas (bubbles) in the film such as thermal spraying are not good in terms of characteristics.
(2) Some organic materials require heating at about 400 ° C., and surface treatment without heat resistance deterioration is required even in that temperature range.
(3) A stable material that does not easily affect the organic material is desired.
In this example, heat-resistant Ni-based plating satisfying the above conditions is selected, and its emissivity is high emissivity (> ε0.8) for the fins facing the inner surface of the soaking block, the outer surface of the transport path, and the material container, The outer surface of the block has a low emissivity (<ε0.2).

11. Temperature separation between the material container and the transportation path that surrounds it The transportation path ≥ material container (material) is the basic temperature setting. However, if the temperature of the transportation path is greatly increased, the risk of material deterioration increases and the temperature is reversed. Then, the organic material evaporated on the transportation route is re-adhered, which causes problems such as evaporation rate stability and deposition. Therefore, it is important that the temperature of the material container and the transportation path can be controlled independently. In addition, as a balance between material usage efficiency and transportation depot problem, the temperature of the transportation path is first raised to the set value when starting up the device, and the temperature is lowered from the set temperature in order to suppress the evaporation of only the container. Keep it. At the time of falling, the container temperature is first lowered below the material evaporation temperature, and then the transportation path temperature is lowered. If this can be done, wasteful material waste can be suppressed, and there is no depot to the container (easy maintenance after release from falling).

As necessary hardware configuration (1) Independent configuration of container material heater and transport path heater (2) Temperature separation of transport path partition wall (part of transport path but facing part of material container and other parts) The cross-sectional area is reduced and the distance is increased so that the thermal conductivity of the material can be lowered)
(3) The heat transfer coefficient between the soaking block and the material container is improved by means such as 6, 7, 8, etc., and when the temperature is raised, the temperature rise can be controlled (time) by controlling the amount of heat to the heater. Sometimes there is no method to reduce the temperature with good response (heat radiation path), so it is possible to reduce the temperature drop of the material container by providing a flow path through which the fluid can pass through the soaking block and flowing the low-temperature fluid through the pipe to exchange heat. . (In this case, it is also important not to make the volume of the soaking block, transport path, and material container larger than necessary.) If the heat medium is liquid here, the heat exchange efficiency is high, but it becomes high-pressure steam to ensure safety. A gas was selected because of the cost increase in the circuit configuration.

  This point will be described in detail. 10-6 is a figure which shows the modification of a material container. As described above, it is desirable that the temperatures of the material container 1100 and the transport pipe 1200 can be controlled independently. Therefore, it is also conceivable to separately control the heater 1120 for heating the material container 1100 and the heater 1220 for heating the transport pipe 1200 separately. In this case, the on / off control timing of the heater 1120 and the heater 1220 may be complicated.

  Therefore, as shown in FIG. 10-6, a heat radiation channel 1114 through which the heat radiation medium can flow can be formed in the soaking block 1110 covering the material container 1100. By forming the heat radiation channel 1114 in this way, the temperature control of the material container 1100 and the transport pipe 1200 can be performed independently while simultaneously controlling the heater 1120 and the heater 1220 on and off.

  For example, when the temperature is lowered, the heater 1120 and the heater 1220 are simultaneously controlled to be turned off, and the heat radiation medium is passed through the heat radiation channel 1114. Thus, the heat of the material container 1100 is taken away by the heat dissipation medium via the soaking block 1110, so that the temperature of the material container 1100 can be lowered before the transport pipe 1200.

  Here, when the heat radiation channel 1114 is formed in the soaking block 1110, it is desirable to reduce the thermal resistance of the heat channel from the material container 1100 to the transport pipe 1200. That is, when the material container 1100 of FIG. 10-3 is a comparison target, the volume of the heat flow path 1105 from the material container 1100 to the transport pipe 1200 is relatively large in the comparison target material container 1100. For this reason, in the comparative example, since the thermal resistance between the material container 1100 and the transport pipe 1200 is small, heat is relatively easily transferred between the material container 1100 and the transport pipe 1200. As a result, in the comparative example, it is difficult to lower the temperature of the material container 1100 before the temperature of the transport pipe 1200, for example, when the temperature is lowered.

  On the other hand, in FIG. 10-6, the volume of the heat flow path 1107 between the material container 1100 and the transport pipe 1200 is reduced. Thereby, since the thermal resistance between the material container 1100 and the transport piping 1200 can be increased, the movement of heat between the material container 1100 and the transport piping 1200 can be relatively suppressed. As a result, the temperature of the material container 1100 can be lowered before the temperature of the transport pipe 1200 by allowing the heat dissipation medium to flow through the heat dissipation channel 1114 when the temperature falls, for example.

12 Temperature monitor of each part The temperature control block (Cu member) can be controlled by a heater with a contact monitor (thermocouple, etc.). The temperature of the transportation path (& material container) will be almost the same as the soaking block temperature after a long time, but the temperature will be greatly different when raising and lowering the temperature. Provide a thermocouple). Also, because of the reduced pressure, T.W. A structure (spring or the like) that presses the C tip against the measurement part is desirable.

  This point will be described in detail. 10-7 is a figure which shows the outline | summary of the structure of the temperature measurement in transport piping. As shown in FIG. 10-7, a temperature monitor 1206 for measuring the temperature of the transport pipe 1200 and a temperature monitor 1216 for measuring the temperature of the soaking block 1210 are provided separately.

  As shown in FIG. 10-7, the temperature monitor 1206 that measures the temperature of the transport pipe 1200 is pressed toward the transport pipe 1200 by the spring force of the spring 1208 from the outside of the soaking block 1210. As a result, the tip of the temperature monitor 1206 is pressed against the transport pipe 1200. As a result, the temperature monitor 1206 can measure the temperature of the transport pipe 1200 more precisely.

  10-7, the temperature monitor 1216 that measures the temperature of the soaking block 1210 is pressed toward the soaking block 1210 by the spring force of the spring 1218 from the outside of the soaking block 1210. Thereby, the tip of the temperature monitor 1216 is pressed against the soaking block 1210. As a result, the temperature monitor 1216 can measure the temperature of the soaking block 1210 more precisely.

13. Composition of heat equalization block and transport path When a member with poor heat conduction is used in the transport path, different independent temperature control is possible in each part, but if the contact state with the heat equalization block is not controlled, individual heat equalization block Since the temperature distribution is generated in the transport path even in the region, it is possible to set the temperature uniformity within the soaking block and the independent temperature between the soaking blocks by providing a constant interval between the transport path and the soaking block.

14 Thermal control around the vapor deposition head The configuration of the soaking block and transport path and the surface treatment method are basically the same as those described above. (The parts that do not require high temperature control performance unlike the material container part are omitted in the fin shape.) The heating part (evaporation head surface, etc.) facing the substrate transfers radiant heat from the mask to the substrate, but the heat transfer is minimized. It is important to suppress. When the temperature of the mask and the substrate rises during the film formation, displacement due to the difference in linear expansion occurs, so that fine deposition becomes difficult. In addition, the vapor deposition head side generates heat flow and temperature distribution due to heat radiation, and temperature controllability is reduced. Problems such as deposits on the nozzle also occur.

As a necessary hardware configuration: (1) Heat shield plate: A reflector (a member having a low surface emissivity) is provided between them, and the opening area is minimized within a range that does not block vapor deposition. (For example, if the number of nozzle holes is small and large, the area is open, and if the number of holes is relatively large, only the hole is opened, etc.) There is a need to avoid mirror finish.
(2) Instead of (1), a partition plate whose temperature is controlled by water cooling is provided to minimize the opening area. (Since the temperature control partition plate is directly water cooled, maintenance becomes difficult, so a bolt fixing method that optimizes the contact surface that can secure the heat transfer required for the water cooling block is adopted.) Therefore, it is desirable to avoid the mirror surface so that the surface state is not easily peeled off.
(3) Heat transfer is further suppressed by configuring a plurality of heat shield plates in a stacked manner. Moreover, the combined use with (2) is also effective.
(4) A low emissivity member is used on the exposed surface around the nozzle hole or a low emissivity surface treatment is performed. (The nozzle material is Cu with excellent thermal conductivity, and the surface treatment uses heat-resistant and low emissivity Ni-based plating)

Others Deposition due to slight diffusion is likely to occur on the chamber wall in the vicinity of the vapor deposition head, even if it is not in the direction of ejecting the organic material. Therefore, although a protection plate may be provided and operated, it is also necessary to take into account the temperature distribution and temperature change amount of the protection plate. The deposition preventive plate around the vapor deposition head receives heat by radiation heat transfer from the vapor deposition head. If there is a temperature distribution, there is a possibility that a depot region and a non-deposit region may occur. In addition, when there is a temporal change in temperature, it is expected that the deposition occurs when the deposition plate temperature is low, the surface emissivity changes due to the passage of time and the deposition, and the deposit re-evaporates when the temperature rises. As a result, the stability of the vapor deposition rate is impaired, and the risk of contamination with impurities, particles, etc. increases in terms of film quality.

As a necessary hardware configuration, a partition plate that prevents organic evaporates from entering the chamber partition around the vapor deposition head is constructed. The deposition plate around the vapor deposition head has a cooled structure so that deposits are not released again even if heat is received from the vapor deposition head. To do.

  Here, the configuration of the vapor deposition head 1300 will be described in detail. 10-8 and 10-9 are diagrams showing an outline of the configuration of the vapor deposition head. 10-8 is a plan view of the vapor deposition head 1300 and components around the vapor deposition head 1300, and FIG. 10-9 is a longitudinal sectional view of the vapor deposition head 1300 and components around the vapor deposition head 1300.

  As shown in FIGS. 10-8 and 10-9, the vapor deposition head 1300 is covered with a soaking block 1310. A heater 1320 is embedded inside the soaking block 1310. The vapor deposition head 1300 is made of, for example, SUS. The soaking block 1310 is made of Cu, for example. The soaking block 1310 is formed by fixing a plurality of soaking block members with bolts 1312. Heat generated by the heater 1320 is transferred to the vapor deposition head 1300 through the soaking block 1310.

  In addition, a heat shielding plate 1330 is provided between the soaking block 1310 and the vacuum vessel 1400. By providing the heat shielding plate 1330, it is possible to suppress the heat generated in the heater 1320 from being transferred to the outside of the soaking block 1310. Therefore, the vapor deposition head is further passed from the heater 1320 through the soaking block 1310. Heat can be efficiently transferred to 1300.

  Further, as shown in FIG. 10-9, heat shielding plates 1330-1 and 1330-2 are provided between the vapor deposition head 1300 and the substrate 1500. More specifically, the heat shielding plates 1330-1 and 1330-2 are provided to face the ejection surface 1304 including the ejection port 1302 that ejects a gas containing vapor of the vapor deposition material of the vapor deposition head 1300 and shields heat. To do. In addition, the heat shielding plates 1330-1 and 1330-2 have an opening 1332 in a gas injection path 1306 containing vapor of the vapor deposition material injected from the injection port 1302. The vapor deposition material gas ejected from the ejection port 1302 passes through the openings 1332 of the heat shielding plates 1330-1 and 1330-2 and is deposited on the substrate 1500.

15. Prevention of thermal interference between vapor deposition heads performing co-evaporation In the case of co-vapor deposition in which mixed vapor deposition is performed simultaneously from vapor deposition heads of 2 sets or more, when the control temperatures of the respective vapor deposition heads are different, interference between members of different temperatures in the vicinity The temperature distribution is likely to occur. In particular, since the high-precision temperature control function on the cooling side tends to be complicated, the temperature control of the vapor deposition head is generally performed only on the heating side with a heater, and cooling is generally performed depending on the radiation to the periphery. Therefore, the temperature of the vapor deposition head set at a higher temperature than other vapor deposition heads can be controlled by a heater, but the vapor deposition head on the low temperature side receives radiation heat from the vapor deposition head on the high temperature side, and the temperature rises from the set value, making control difficult. .

As a necessary hardware configuration, temperature interference is prevented by providing a partition plate whose temperature is controlled to be equal to or lower than the low temperature deposition head set temperature between the deposition heads having different set temperatures. (In the embodiment, a water-cooled SUS plate is used.) With this, both the high-temperature side vapor deposition head and the low-temperature side vapor deposition head have only temperature control on the heating side, and predetermined temperature control is possible only by heater control. It becomes. In addition, the heater efficiency is higher when the surface emissivity of the partition plate is lower in the range where the deposit is difficult to peel off.

  This point will be described in detail. FIG. 10-10 is a diagram illustrating an outline of the configuration of the Post-Mix deposition head. As shown in FIG. 10-10, the vapor deposition head 1300 includes a host head 1300-1 for injecting a host gas containing vapor of the host vapor deposition material and a dopant head 1300-2 for injecting a dopant gas containing vapor of the dopant vapor deposition material. And have.

  A host gas containing the vapor of the host vapor deposition material is transported to the host head 1300-1 via the transport pipe 1200-1. The host head 1300-1 injects the host gas transported through the transport piping 1200-1. The host gas is heated to a higher sound (for example, about 380 ° C.) than the dopant gas and is transported to the host head 1300-1.

  On the other hand, a dopant gas containing a vapor of a dopant vapor deposition material is transported to the dopant head 1300-2 via a transport pipe 1200-2. The dopant head 1300-2 injects the dopant gas transported through the transport pipe 1200-2. The host gas and dopant gas ejected from the host head 1300-1 and the dopant head 1300-2 are deposited on the substrate 1500 in a mixed state after being ejected from each head. The dopant gas is heated to a lower temperature (for example, about 230 ° C.) than the host gas and is transported by the dopant head 1300-2.

  Here, a low temperature member 1340 controlled to a temperature lower than the temperature of the dopant head 1300-2 is provided between the host head 1300-1 and the dopant head 1300-2. The low temperature member 1340 is formed, for example, so that a cooling medium (for example, water) can flow therethrough. Thus, by providing the low temperature member 1340 between the host head 1300-1 and the dopant head 1300-2, the radiant heat from the host head 1300-1 is transferred to the low temperature member 1340. Accordingly, the temperature rise of the dopant head 1300-2 due to radiant heat from the host head 1300-1 can be suppressed. In addition, since the radiant heat is transferred to the low temperature member 1340 in both the host head 1300-1 and the dopant head 1300-2, both the host head 1300-1 and the dopant head 1300-2 can be adjusted by temperature control only on the heating side. It can be carried out.

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus, 11 ... Processing container, 12 ... Processing chamber, 16a-16f ... Deposition head, 20
a to 20f... gas supply source, 101, 201, 301, 401.
20, 220, 320, 420 ... 1st-4th container, 125a, 125b, 225a,
225b, 325a, 325b, 415, 415a, 415b ... heater (heating unit), 60
0 ... gas discharge system (discharge pipe), 700 ... gas introduction system (gas introduction path), L12, L22,
L32, L42 ... transport pipe (individual transport pipe), L40 ... transport pipe (common transport pipe), V101, V
201, V301, V401 ... Valve, S ... Substrate, 1000 ... Film forming apparatus, 1100 ... Material container, 1110, 1210, 1310 ... Soaking block, 1114 ... Heat radiation channel, 1120, 1220, 1320 ... Heater, 1130, 1230 , 1330 ... heat shield plate, 1200 ... transport piping, 1202 ... projection, 1206, 1216 ... temperature monitor, 1208, 1218 ... spring, 1300 ... vapor deposition head, 1300-1 ... host head, 1300-2 ... dopant head, 1302 ... Injecting port, 1304 ... injecting surface, 1306 ... injecting path, 1340 ... low temperature member, 1400 ... vacuum container, 1500 ... substrate.

Claims (26)

A material container in which a deposition material is stored;
A transport path for transporting a gas containing vapor of vapor deposition material evaporated in the material container;
A vapor deposition head for injecting a gas containing vapor of the vapor deposition material transported through the transport path;
A heating element for heating the material container, the transport path, and the vapor deposition head;
With
The film forming apparatus, wherein the material container, the transport path, the vapor deposition head, and the heating element are accommodated in a vacuum container. The film forming apparatus according to claim 1, further comprising a soaking block that is made of a material having a higher thermal conductivity than a material of the transport path and covers the heating element. The film forming apparatus according to claim 2, wherein the soaking block is disposed so as to cover the transport path. 4. The film forming apparatus according to claim 3, wherein the heat equalization block has an inner surface facing the transport path formed to have a higher emissivity than an outer surface on the vacuum vessel side. The film forming apparatus according to claim 3, wherein the transport path is formed such that an outer surface facing the soaking block has a higher emissivity than an outer surface of the soaking block on the vacuum vessel side. The transport path has irregularities formed on the outer surface facing the soaking block,
The soaking block has irregularities formed on the inner surface facing the transport path,
The film forming apparatus according to claim 3, wherein the transport path and the soaking block are arranged so that the uneven shapes formed on each of the transport path and the soaking block are engaged with each other. The film forming apparatus according to claim 2, wherein the transport path is formed of SUS. The film forming apparatus according to claim 2, wherein the soaking block is made of Cu. The transport path has a protrusion formed on the outer surface facing the soaking block,
The film forming apparatus according to claim 3, wherein the transport path is supported by the protrusions on the soaking block by point contact. The film forming apparatus according to claim 3, further comprising a heat shielding member that is provided between the soaking block and the vacuum vessel and shields heat. The film forming apparatus according to claim 2, wherein the soaking block is disposed so as to cover the material container. 4. The film forming apparatus according to claim 3, wherein the soaking block is formed such that an inner surface facing the material container has a higher emissivity than an outer surface on the vacuum container side. The film forming apparatus according to claim 3, wherein an outer surface of the material container facing the soaking block has a higher emissivity than an outer surface of the soaking block on the vacuum container side. The material container has irregularities formed on the outer surface facing the soaking block,
The soaking block has irregularities formed on the inner surface facing the material container,
The film forming apparatus according to claim 3, wherein the material container and the soaking block are arranged so that the uneven shapes formed on each of the material container and the soaking block are engaged with each other. The film forming apparatus according to claim 2, wherein the material container is formed of SUS. The material container has a protrusion formed on the outer surface facing the soaking block,
The film forming apparatus according to claim 3, wherein the material container is supported by the protrusions on the soaking block by point contact. The heating control part which heat-controls the 1st heat generating body which heats the material container, and the 2nd heat generating body which heats the transportation way independently, respectively is provided. Deposition device. A cooling pipe that is formed inside a soaking block that covers the material container and allows a heat radiating medium to flow therethrough, and further includes a cooling control unit that controls a flow timing and a flow rate of the heat radiating medium in the cooling pipe. The film forming apparatus according to claim 11. The film forming apparatus according to claim 2, wherein the soaking block is disposed so as to cover the vapor deposition head. 4. The film forming apparatus according to claim 3, wherein the soaking block is formed such that an inner surface facing the vapor deposition head has a higher emissivity than an outer surface on the vacuum vessel side. The film deposition apparatus according to claim 3, wherein an outer surface of the vapor deposition head facing the soaking block has a higher emissivity than an outer surface of the soaking block on the side of the vacuum vessel. The vapor deposition head has irregularities formed on the outer surface facing the soaking block,
The soaking block has irregularities formed on the inner surface facing the transport path,
The film deposition apparatus according to claim 3, wherein the vapor deposition head and the soaking block are arranged so that the concavo-convex shapes formed on each of the vapor deposition head and the soaking block are engaged with each other. The film deposition apparatus according to claim 2, wherein the vapor deposition head is formed of SUS. The vapor deposition head has a protrusion formed on the outer surface facing the soaking block,
The film deposition apparatus according to claim 3, wherein the vapor deposition head is supported by the protrusions on the soaking block by point contact. An ejection path for a gas including vapor of the vapor deposition material ejected from the ejection port, provided to face an ejection surface including an ejection port for ejecting the gas including the vapor of the vapor deposition material of the vapor deposition head and shielding heat. The film forming apparatus according to claim 19, further comprising a heat shielding member having an opening formed therein. The vapor deposition head has a host head that ejects a host gas containing a vapor of a host vapor deposition material, and a dopant head that jets a dopant gas containing a vapor of a dopant vapor deposition material,
The film forming apparatus according to claim 19, further comprising a low temperature member provided between the host head and the dopant head and controlled to a temperature lower than a temperature of the dopant head.

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