JP5411243B2 - Vapor deposition equipment - Google Patents

Description

  The present invention relates to a vapor deposition apparatus that deposits a heated film-forming material on an object to be processed to form a film.

  In recent years, organic EL elements using electroluminescence (EL) have been developed. Organic EL elements generate little heat, so they consume less power than CRTs, etc., and because they emit light, they have advantages such as better viewing angles than liquid crystal displays (LCDs). Development is expected.

  The basic structure of the organic EL element is a sandwich structure in which an anode (anode) layer, a light emitting layer, and a cathode (cathode) layer are formed on a glass substrate. In order to extract light from the light emitting layer to the outside, a transparent electrode made of ITO (Indium Tin Oxide) is used for the anode layer on the glass substrate. Such an organic EL element is generally manufactured by sequentially forming a light emitting layer and a cathode layer on a glass substrate having an ITO layer (anode layer) formed in advance on the surface thereof. For the light-emitting layer, for example, materials such as polycyclic aromatic hydrocarbons, heteroaromatic compounds, and organometallic complex compounds are used. In addition, if necessary, a thin film for improving luminous efficiency may be formed between the anode layer and the light emitting layer or between the cathode layer and the light emitting layer. Can be formed.

  As an apparatus for forming the light emitting layer of the organic EL element as described above, for example, a vacuum evaporation apparatus shown in Patent Document 1 is known.

  In general, in the step of forming the light emitting layer of the organic EL element, the inside of the processing container is depressurized to a predetermined pressure. The reason for this is that when the light emitting layer of the organic EL element is formed as described above, vapor of the film forming material heated to about 200 ° C. to 500 ° C. is supplied from the vapor deposition head, and the film forming material is applied to the substrate surface. Although vapor deposition is performed, if the film formation process is performed in the air, the heat of vapor of the vaporized film formation material is transmitted to the air in the processing container, so that the components such as various sensors arranged in the processing chamber are heated to a high temperature. This is because the characteristics of these parts are deteriorated or the parts themselves are damaged. Therefore, in the step of forming the light emitting layer of the organic EL element, the inside of the processing container is depressurized to a predetermined pressure and maintained so that the heat of the vapor of the film forming material does not escape (vacuum insulation).

  On the other hand, the vapor generating part for evaporating the film forming material, the piping for sending the vapor of the film forming material generated in the vapor generating part to the vapor deposition head, the control valve for controlling the supply of the vapor of the film forming material, etc. Generally, it is placed outside the processing container for reasons such as replenishment and maintenance. However, when these vapor generating parts, piping, control valves, etc. are arranged under atmospheric pressure, the heat of the film forming material generated in the vapor generating part is released to the vapor deposition head by radiating heat through the air. This causes a problem that it is difficult to maintain a desired temperature. Therefore, a steam generation part, piping, a control valve, etc. are also provided in the decompression space.

JP 2000-282219 A

  However, if the heater for heating the vapor of the film forming material in the vapor deposition head is installed in the reduced pressure space as described above, there is a slight gap between the heater and the flow path of the film forming material. The heat insulation of the heater is not sufficiently transferred to the film forming material. For this reason, it is difficult to uniformly heat the film forming material, resulting in temperature variations.

  The objective of this invention is providing the vapor deposition apparatus which can transmit the heat | fever of a heater efficiently to film-forming material, and can equalize | homogenize the vapor | steam of film-forming material.

  In order to solve the above problems, the present invention is a vapor deposition apparatus that performs a film formation process on an object to be processed by vapor deposition, a process chamber that performs a film formation process on the object to be processed, a vapor generation chamber that evaporates a film forming material, An exhaust mechanism for depressurizing the inside of the processing chamber, a steam outlet for ejecting a vapor of the film forming material disposed exposed in the processing chamber, and a vapor for evaporating the film forming material in the vapor generating chamber A generating part and a control valve for controlling the supply of vapor of the film forming material are disposed, and the vapor of the film forming material generated in the vapor generating part is not discharged outside the processing chamber and the vapor generating chamber. A vapor deposition head having a flow path to be supplied to the vapor outlet is provided, and the vapor deposition head is provided with a heater accommodating portion sealed with respect to the processing chamber so as to surround the flow path. At least one of argon gas and nitrogen gas Providing a vapor deposition apparatus characterized by being present. Thereby, even if a clearance gap arises between a heater and a heating surface, heat is transmitted via either argon gas or nitrogen gas.

  In addition, the present invention is a vapor deposition apparatus for performing film formation processing on an object to be processed by vapor deposition, and is disposed adjacent to the processing chamber for film forming processing on the object to be processed to evaporate film forming materials. A vapor generation chamber and an exhaust mechanism for depressurizing the inside of the processing chamber are provided, a vapor outlet for ejecting a vapor of a film forming material disposed so as to be exposed to the processing chamber, and film formation in the vapor generation chamber A vapor generating part for evaporating the material and a control valve for controlling the supply of the vapor of the film forming material are arranged, and the vapor of the film forming material generated in the vapor generating part is sent between the processing chamber and the vapor generating chamber. A vapor deposition head having a flow path to be supplied to the vapor ejection port without being exposed to the outside is provided, and the vapor deposition head has a heater housing portion sealed to the vapor generation chamber and the processing chamber. Is formed so as to surround the heater housing portion with argon. Scan, to provide a vapor deposition apparatus, wherein at least one is present in the nitrogen gas.

  The heater housing portion may be sealed and sealed so that at least one of the argon gas and the nitrogen gas has a pressure of about several tens of torr.

  A plurality of vapor generation units may be provided for one vapor deposition head.

  A power supply line to the heater may extend outside the processing chamber through the inside of the steam generation chamber.

  According to the present invention, the heat of the heater can be efficiently transmitted to the film forming material, and the evaporation amount of the film forming material ejected into the processing chamber and the temperature of the vapor can be kept uniform.

It is explanatory drawing of an organic EL element. It is explanatory drawing of the film-forming system. It is sectional drawing which showed schematically the structure of the vapor deposition apparatus concerning embodiment of this invention. It is a perspective view of a vapor deposition unit. It is a circuit diagram of a vapor deposition unit. It is a perspective view which shows the installation state of a vapor deposition head. It is sectional drawing which shows the attachment state of the heater to the heater accommodating part of a vapor deposition head, and a partial enlarged view. It is a perspective view which shows the example of the disc spring used in FIG. It is a perspective view which shows the vapor deposition unit which provided the different communicating path. It is a perspective view which shows the installation state of a different vapor deposition unit. It is the figure which looked at the test body of the Example from the front and the plane. It is sectional drawing which shows the heater attachment state of an Example, (A) is based on the attachment method concerning this invention, (B) is what provided the spacer of thickness 0.2mm, (C) is based on the conventional method. It is.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is an explanatory diagram of an organic EL element A manufactured in the embodiment of the present invention. The most basic structure of the organic EL element A is a sandwich structure in which the light emitting layer 3 is sandwiched between the anode 1 and the cathode 2. The anode 1 is formed on a glass substrate G as an object to be processed. For the anode 1, a transparent electrode made of, for example, ITO (Indium Tin Oxide) capable of transmitting the light of the light emitting layer 3 is used.

  Although the organic layer which is the light emitting layer 3 has one layer to a multilayer layer, in FIG. 1, it has a six-layer structure in which the first layer a1 to the sixth layer a6 are laminated. The first layer a1 is a hole transport layer, the second layer a2 is a non-light emitting layer (electron blocking layer), the third layer a3 is a blue light emitting layer, the fourth layer a4 is a red light emitting layer, the fifth layer a5 is a green light emitting layer, The sixth layer a6 is an electron transport layer. In the organic EL element A, a light emitting layer 3 (first layer a1 to sixth layer a6) is sequentially formed on the anode 1 on the surface of the glass substrate G, as will be described later, and a work function adjusting layer (not shown). The cathode 2 made of Ag, Mg / Ag alloy or the like is formed, and finally the whole is sealed with a nitride film (not shown) or the like.

  FIG. 2 is an explanatory diagram of the film forming system 10 for manufacturing the organic EL element A. FIG. The film forming system 10 includes a loader 11, a transfer chamber 12, a light emitting layer 3 vapor deposition device 13, a transfer chamber 14, and a work function adjusting layer film forming device 15 along the transport direction (rightward in FIG. 2) of the substrate G. The transfer chamber 16, the etching device 17, the transfer chamber 18, the sputtering device 19, the transfer chamber 20, the CVD device 21, the transfer chamber 22, and the unloader 23 are arranged in series in this order. The loader 11 is an apparatus for carrying the substrate G into the film forming system 10. The transfer chambers 12, 14, 16, 18, 20, and 22 are apparatuses for transferring the substrate G between the processing apparatuses. The unloader 23 is an apparatus for carrying the substrate G out of the film forming system 10.

  Here, the vapor deposition apparatus 13 concerning embodiment of this invention is demonstrated in detail. 3 is a cross-sectional view schematically showing the configuration of the vapor deposition apparatus 13, FIG. 4 is a perspective view of a vapor deposition unit 55 (56, 57, 58, 59, 60) provided in the vapor deposition apparatus 13, and FIG. It is a circuit diagram of the unit 55 (56, 57, 58, 59, 60).

  The vapor deposition apparatus 13 has a configuration in which a processing chamber 30 for forming a film on the substrate G and a vapor generation chamber 31 for evaporating a film forming material are disposed adjacent to each other vertically. The processing chamber 30 and the steam generation chamber 31 are formed inside a container body 32 made of aluminum, stainless steel or the like, and a partition wall made of a heat insulating material is provided between the processing chamber 30 and the steam generation chamber 31. 33 is partitioned.

  An exhaust hole 35 is opened in the bottom surface of the processing chamber 30, and a vacuum pump 36 that is an exhaust mechanism disposed outside the container body 32 is connected to the exhaust hole 35 via an exhaust pipe 37. Yes. By the operation of the vacuum pump 36, the inside of the processing chamber 30 is reduced to a predetermined pressure.

  Similarly, an exhaust hole 40 is opened in the bottom 39 of the steam generation chamber 31, and a vacuum pump 41, which is an exhaust mechanism disposed outside the container body 32, has an exhaust pipe 42. Connected through. By the operation of the vacuum pump 41, the inside of the steam generation chamber 31 is reduced to a predetermined pressure.

  Above the processing chamber 30, a guide member 45 and a support member 46 that is moved along the guide member 45 by an appropriate drive source (not shown) are provided. A substrate holding unit 47 such as an electrostatic chuck is attached to the support member 46, and the substrate G to be deposited is held horizontally on the lower surface of the substrate holding unit 47.

  A carry-in port 50 and a carry-out port 51 are formed on the side surface of the processing chamber 30. In the vapor deposition apparatus 13, the substrate G carried in from the carry-in port 50 is held by the substrate holding unit 47, conveyed rightward in FIG. 3 in the processing chamber 30, and carried out from the carry-out port 51.

  Six vapor deposition units 55, 56, 57, 58, 59, and 60 that supply vapor of the film forming material are provided in the partition wall 33 that partitions the processing chamber 30 and the vapor generation chamber 31 in the direction in which the substrate G is transported. Are arranged along. These vapor deposition units 55 to 60 include a first vapor deposition unit 55 for vapor-depositing a hole transport layer, a second vapor deposition unit 56 for vapor-depositing a non-light-emitting layer, a third vapor deposition unit 57 for vapor-depositing a blue light-emitting layer, and a red light-emitting layer. The fourth vapor deposition unit 58 for vapor-depositing, the fifth vapor deposition unit 59 for vapor-depositing the green light-emitting layer, and the sixth vapor deposition unit 60 for vapor-depositing the electron transport layer are carried while being held by the substrate holder 47. The vapor of the film forming material is sequentially formed on the lower surface of the substrate G. Further, a vapor partition wall 61 is disposed between the vapor deposition units 55 to 60, and the vapors of the film forming materials supplied from the vapor deposition units 55 to 60 are not mixed with each other on the lower surface of the substrate G. The films are sequentially formed.

  Since each of the vapor deposition units 55 to 60 has the same configuration, the first vapor deposition unit 55 will be described as a representative. As shown in FIG. 4, the vapor deposition unit 55 has a piping case (transportation path) 66 attached below the vapor deposition head 65, and three vapor generating portions 70, 71, 72 and three The control valve 75, 76, 77 is attached.

  On the upper surface of the vapor deposition head 65, a vapor jet port 80 for ejecting vapor of the film forming material of the light emitting layer 3 of the organic EL element A is formed. The steam jets 80 are arranged in a slit shape along a direction orthogonal to the transport direction of the substrate G, and have a length that is the same as or slightly longer than the width of the substrate G. The substrate G is transported by the above-described substrate holding portion 47 while the vapor of the film forming material is ejected from the slit-shaped vapor ejection port 80, thereby forming a film on the entire lower surface of the substrate G.

  The vapor deposition head 65 is supported by a partition wall 33 that partitions the process chamber 30 and the vapor generation chamber 31 in a posture in which the upper surface on which the vapor jet port 80 is formed is exposed in the process chamber 30. The lower surface of the vapor deposition head 65 is exposed in the vapor generation chamber 31, a piping case (transportation path) 66 attached to the lower surface of the vapor deposition head 65, and vapor generation units 70 and 71 attached to the piping case 66. 72 and control valves 75, 76, 77 are all disposed in the steam generation chamber 31. The communication path 101 communicates with the outside of the processing chamber 30 through the bottom surface 39 from the lower part of the piping case 66.

  As shown in FIG. 5, the three steam generation units 70, 71, 72 and the three control valves 75, 76, 77 have a corresponding relationship with each other, and the control valve 75 forms the film generated by the steam generation unit 70. The supply of the material vapor is controlled, the control valve 76 controls the supply of the vapor of the film formation material generated by the vapor generation unit 71, and the control valve 77 controls the supply of the film formation material generated by the vapor generation unit 72. The supply of steam is controlled. Inside the piping case 66, branch pipes 81, 82, 83 connecting the steam generation units 70 to 72 and the control valves 75 to 77, and the control valves 75 to 77 from the steam generation units 70 to 72. A joining pipe 85 is provided for joining the vapors of the supplied film forming material and feeding them to the vapor deposition head 65. Each of the vapor generating units 70 to 72 has the same configuration, in which the film forming material (evaporation material) of the light emitting layer 3 of the organic EL element A is disposed, and a plurality of heaters are attached to the side surfaces. The film forming material is evaporated.

  As shown in FIG. 6, a heater 100 is attached to the vapor deposition head 65 so as to surround the vapor flow path of the film forming material. By providing the heater 100 along all the side surfaces of the vapor flow path, the temperature variation of the vapor passing through the vapor deposition head 65 can be reduced and uniform heating can be achieved.

  FIG. 7 is an enlarged view of an arrangement example of the heater 100 in the heater housing portion 102 and a broken-line circle. As shown in FIG. 7, the heater 100 is attached to the heater storage portion 102. The heater 100 is pressed against the inner surface of the heater housing portion 102 facing the vapor flow path 103 of the film forming material. As a means for pressing, for example, a disc spring 110 as shown in FIG. 8 is used and is arranged at an appropriate interval. Further, as shown in the enlarged view of FIG. 7, a pressing plate 111 is disposed between the disc spring 110 and the heater 100 so that the pressing force of the disc spring 110 is evenly transmitted to the entire surface of the heater 100. It is preferable. Since the heater 100 is pressed toward the flow path 103 in this way, heat is efficiently and uniformly transmitted to the vapor of the film forming material passing through the vapor deposition head 65, so that the temperature management becomes easy and the vapor A stable vapor deposition process can be realized by stabilizing the temperature.

  Furthermore, as shown in FIG. 4, a communication path 101 in which a power supply line 104 for supplying power to the heater 100 is accommodated communicates with the outside of the processing chamber 30. The atmosphere enters the heater storage portion 102 through the communication path 101, and the heater 100 is disposed in the atmosphere. As a result, even if a gap is formed between the heater 100 and the side surface of the heater storage portion 102, the heat of the heater 100 is transmitted to the flow path 103 side via the air, so that the heat can be transmitted uniformly. it can.

  In addition, as shown in FIG. 6, by providing temperature measuring means such as a thermocouple 121 in the heater housing 102, the temperature of the heater 100 is measured, and temperature data is fed back to perform appropriate temperature control. be able to. The connection line 122 of the thermocouple 121 and the power supply line 104 that supplies power to the heater 100 extend to the outside of the processing chamber 30 through the communication path 101.

  Moreover, FIG. 9 shows the vapor deposition unit 55 provided with the communication path 101a of a different form. As shown in the figure, the communication path 101 a extends from both side surfaces of the lower part of the vapor deposition head 65, penetrates the bottom surface 39 of the vapor generation chamber 31, and communicates the inside of the vapor deposition head 65 and the outside of the vapor generation chamber 31. The communication path 101a can be flexibly deformed by, for example, a bellows shape, and the material is stainless steel or the like. Similar to the communication path 101 in FIG. 4 described above, the power supply line 104 and the like to the heater 100 extend outside the processing chamber 30 through the communication path 101a in FIG.

  In addition, as shown in FIG. 10, the heater accommodating part 102 in the vapor deposition head 65 may be a sealed space, and argon gas, nitrogen gas, or the like may be sealed therein so as to have a pressure of, for example, several tens of torr. . Also in this case, the heat of the heater 100 can be transmitted via these gases. The power supply line 104 to the heater 100 extends to the outside of the processing chamber 30 through the inside of the steam generation chamber 31, for example.

  In addition, the work function adjusting layer forming apparatus 15 shown in FIG. 2 is configured to form a work function adjusting layer on the surface of the substrate G by vapor deposition. The etching apparatus 17 is configured to etch each layer formed. The sputtering apparatus 19 is configured to form the cathode 2 by sputtering an electrode material such as Ag. The CVD apparatus 21 seals the organic EL element A by forming a sealing film made of a nitride film or the like by CVD or the like.

  In the film forming system 10 configured as described above, the substrate G carried in via the loader 11 is first carried into the vapor deposition apparatus 13 by the transfer chamber 12. In this case, the anode 1 made of, for example, ITO is formed in a predetermined pattern on the surface of the substrate G in advance.

  In the vapor deposition apparatus 13, the substrate G is held by the substrate holding unit 47 with the surface (film formation surface) facing downward. In addition, before the substrate G is carried into the vapor deposition apparatus 13 as described above, the inside of the processing chamber 30 and the vapor generation chamber 31 of the vapor deposition apparatus 13 are both set to a predetermined pressure in advance by the operation of the vacuum pumps 36 and 41. The pressure is reduced.

  Then, in the decompressed steam generation chamber 31, the vapor of the film-forming material evaporated in each of the steam generation units 70 to 72 is opened and closed in the merging pipe 85 in any combination by opening and closing the control valves 75 to 77. They are merged and supplied to the vapor deposition head 65. The vapor of the film forming material supplied to the vapor deposition head 65 is jetted from the vapor jet port 80 on the upper surface of the vapor deposition head 65 in the processing chamber 30 in a state where the vapor is controlled at a uniform temperature by the heater 100.

  On the other hand, in the decompressed processing chamber 30, the substrate G held by the substrate holding part 47 is conveyed rightward in FIG. During the movement, the vapor of the film forming material is supplied from the vapor jet port 80 on the upper surface of the vapor deposition head 65, and the light emitting layer 3 is formed and laminated on the surface of the substrate G. By supplying the soaked steam, a high-quality film forming process can be performed.

  The substrate G on which the light emitting layer 3 is formed in the vapor deposition apparatus 13 is then carried into the film formation apparatus 15 by the transfer chamber 14. Thus, in the film forming apparatus 15, the work function adjusting layer is formed on the surface of the substrate G.

  Next, the substrate G is carried into the etching apparatus 17 by the transfer chamber 16 and the shape of each film is adjusted. Next, the substrate G is carried into the sputtering apparatus 19 by the transfer chamber 18 to form the cathode 2. Next, the substrate G is carried into the CVD apparatus 21 by the transfer chamber 20, and the organic EL element A is sealed. The organic EL element A thus manufactured is carried out of the film forming system 10 via the transfer chamber 22 and the unloader 23.

  As mentioned above, although preferred embodiment of this invention was described, this invention is not limited to this example. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to. For example, the substrate G to be processed can be applied to various substrates such as a glass substrate, a silicon substrate, a square, a round substrate, and the like. Further, the present invention can be applied to an object to be processed other than the substrate.

  In FIG. 2, along the transport direction of the substrate G, a loader 11, a transfer chamber 12, a light emitting layer 3 vapor deposition device 13, a transfer chamber 14, a work function adjusting layer film forming device 15, a transfer chamber 16, an etching device 17, Although the film forming system 10 having the configuration in which the transfer chamber 18, the sputtering apparatus 19, the transfer chamber 20, the CVD apparatus 21, the transfer chamber 22, and the unloader 23 are arranged in series has been shown, the present invention is not limited to this. The number and arrangement can be changed arbitrarily.

  In addition, the material ejected from the vapor deposition head 65 of each vapor deposition unit 55-60 may be the same, or may differ. Further, the number of vapor deposition units is not limited to six, and is arbitrary. Further, the number of steam generation units and control valves provided in the vapor deposition unit is also arbitrary.

  As shown in FIG. 11, a mica heater of 45 mm × 211.5 mm is housed in a 68 mm × 260 mm casing, and A-1, A-2, A on the A surface which is the heating surface side (steam flow path side) -3 The temperature of each point, the temperature H-1 at the center of the heater itself, and the temperature B-1 at the back side (B surface) of the heater end were measured. The heater was a mica heater, and the thickness of the heater was 1.5 mm. The thickness of the heater housing was 1.6 mm with a clearance of 0.1 mm with respect to the thickness of the heater.

  As an example of the present invention, the heater was attached by pressing the back surface of the heater 100 to the heating side (A surface side) with a disc spring 110 via a pressing plate 111 as shown in FIG. The thickness of the pressing plate 111 was tested for two types of 0.2 mm and 0.3 mm. A plate having a holding plate 111 of 0.2 mm and three disc springs 110 arranged at S1, S3 and S5 in FIG. 3. No. 3 in which the disc springs 110 are arranged at five locations S1 to S5. It was set to 4. When the holding plate 111 is 0.3 mm, no. As in No. 4, the plate springs 110 arranged at five locations are No.4. It was set to 5. In order to prevent the disc spring 110 from being displaced, a notch having a depth of 0.2 mm was formed in the housing at the location where the disc spring 110 was disposed. The shape of the disc spring 110 used is shown in FIG.

  As a comparative example, as shown in FIG. 12 (B), a heater having a 0.2 mm-thickness spacer 121 at both ends of the heater 100 and having a 0.2 mm gap is used. It was set to 1. Furthermore, as a conventional method, as shown in FIG. 12 (C), a case where the heater 100 is housed in a housing portion 0.1 mm thicker than the thickness of the heater, that is, one having a gap of 0.1 mm is used. 2. Heating is performed until the temperature at the point A-1 reaches 450 ° C. for both the horizontal placement with the flat portion of the housing in the horizontal direction and the vertical placement with the flat portion oriented in the vertical direction. Was measured. The measurement results are shown in Table 1.

  As shown in Table 1, the variation in temperature (temperature difference ΔT) on the heating side (A surface) was reduced by pressing the heater 100 against the heating side using the disc spring 110 for both flat and vertical placement. The variation of the holding plate 111 was smaller when 0.3 mm than when 0.2 mm. The temperature of the heater itself (temperature of the H-1 point) when the point A-1 becomes 450 ° C. is No. having a large gap size. 1 was the highest. Even when the pressure plate 111 is 0.3 mm, the temperature at the point H-1 tends to be slightly higher. However, there is an effect of reducing temperature variations, and the vapor temperature of the film forming material is stabilized. Is effective.

  The present invention can be applied to the field of manufacturing organic EL elements.

A Organic EL element G Glass substrate 10 Processing system 11 Loader 11
12, 14, 16, 18, 20, 22 Transfer chamber 13 Emission layer deposition apparatus 15 Work function adjusting layer deposition apparatus 17 Etching apparatus 19 Sputtering apparatus 21 CVD apparatus 23 Unloader 30 Processing chamber 31 Vapor generation chamber 32 Container body 33 Bulkhead 35, 40 Exhaust hole 36, 41 Vacuum pump 45 Guide member 47 Substrate holding part 55-60 Deposition unit 65 Deposition head 66 Piping case 70-72 Steam generation part 75-77 Control valve 80 Steam outlet 100 Heater 101, 101a Passage 102 Heater storage 103 Flow path 104 Power supply line 110 Belleville spring 111 Holding plate

Claims (5)

A vapor deposition apparatus for performing a film formation process on an object to be processed by vapor deposition,
A processing chamber for forming a film to be processed;
A steam generation chamber for evaporating the film forming material;
An exhaust mechanism for depressurizing the inside of the processing chamber,
A vapor outlet for ejecting vapor of the film-forming material disposed exposed in the processing chamber;
In the vapor generation chamber, a vapor generation unit for evaporating the film forming material and a control valve for controlling the supply of the vapor of the film forming material are arranged,
A vapor deposition head having a flow path for supplying the vapor of the film forming material generated in the vapor generation unit to the vapor outlet without providing the vapor to the outside of the treatment chamber and the vapor generation chamber is provided,
In the vapor deposition head, a heater accommodating portion sealed with respect to the processing chamber is formed so as to surround the flow path,
The vapor deposition apparatus, wherein at least one of argon gas and nitrogen gas is present in the heater housing portion. A vapor deposition apparatus for performing a film formation process on an object to be processed by vapor deposition,
A processing chamber for forming a film to be processed;
A vapor generation chamber disposed adjacent to the processing chamber for evaporating the film forming material;
An exhaust mechanism for depressurizing the inside of the processing chamber,
A vapor outlet for ejecting vapor of the film-forming material disposed exposed in the processing chamber;
In the vapor generation chamber, a vapor generation unit for evaporating the film forming material and a control valve for controlling the supply of the vapor of the film forming material are arranged,
A vapor deposition head having a flow path for supplying the vapor of the film forming material generated in the vapor generation unit to the vapor outlet without providing the vapor to the outside of the treatment chamber and the vapor generation chamber is provided,
In the vapor deposition head, a heater accommodating portion sealed with respect to the vapor generation chamber and the processing chamber is formed so as to surround the flow path,
The vapor deposition apparatus, wherein at least one of argon gas and nitrogen gas is present in the heater housing portion.   The vapor deposition apparatus according to claim 1, wherein the heater housing is sealed and sealed so that at least one of the argon gas and the nitrogen gas has a pressure of about several tens of torr.   The vapor deposition apparatus according to claim 1, further comprising a plurality of vapor generation units with respect to one vapor deposition head.   The vapor deposition apparatus according to claim 1, wherein a power supply line to the heater extends outside the processing chamber through the inside of the steam generation chamber.

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