JP5511767B2 - Vapor deposition equipment - Google Patents

Description

  The present invention relates to a vapor deposition apparatus that performs film formation on an object to be processed by vapor deposition.

  In recent years, organic EL elements using electroluminescence (EL) have been developed. Organic EL elements generate little heat, so they consume less power than CRTs, etc., and because they emit light, they have advantages such as better viewing angles than liquid crystal displays (LCDs). Development is expected.

  The most basic structure of this organic EL element is a sandwich structure in which an anode (anode) layer, a light emitting layer and a cathode (cathode) layer are formed on a glass substrate. In order to extract light from the light emitting layer to the outside, a transparent electrode made of ITO (Indium Tin Oxide) is used for the anode layer on the glass substrate. Such an organic EL element is generally manufactured by sequentially forming a light emitting layer and a cathode layer on a glass substrate on which an ITO layer (anode layer) is formed in advance.

  As an apparatus for forming the light emitting layer of the organic EL element as described above, for example, a vacuum evaporation apparatus shown in Patent Document 1 is known.

JP 2000-282219 A

  By the way, in the step of forming the light emitting layer of the organic EL element, the inside of the processing container is depressurized to a predetermined pressure. The reason for this is that when the light emitting layer of the organic EL element is formed as described above, vapor of the film forming material heated to about 200 ° C. to 500 ° C. is supplied from the vapor deposition head, and the film forming material is applied to the substrate surface. If the film is deposited in the atmosphere, the vaporized vapor of the film-forming material is transferred to the air in the processing container, so that various sensors and other components placed in the processing chamber are heated to a high temperature. This is because the characteristics of these parts are deteriorated or the parts themselves are damaged. Therefore, in the step of forming the light emitting layer of the organic EL element, the inside of the processing container is depressurized to a predetermined pressure and maintained so that the heat of the vapor of the film forming material does not escape (vacuum insulation).

  On the other hand, the vapor generating part for evaporating the film forming material, the piping for sending the vapor of the film forming material generated in the vapor generating part to the vapor deposition head, the control valve for controlling the supply of the vapor of the film forming material, etc. Generally, it is placed outside the processing container for reasons such as replenishment and maintenance. However, if these vapor generating parts, piping, control valves, etc. are arranged under atmospheric pressure, the heat of the film forming material generated in the vapor generating part can be transferred to the vapor deposition head by radiating heat through the air. In the meantime, there arises a problem that it is difficult to maintain a desired temperature. For example, if the vapor of the film forming material falls below the set temperature before being sent to the vapor deposition head, the film forming material is deposited in a pipe or the like and cannot be sufficiently sent to the vapor deposition head. For this reason, the amount of vapor supplied from the vapor deposition head decreases, and the vapor deposition rate decreases.

  Accordingly, an object of the present invention is to provide a vapor deposition apparatus that can send vapor of a film forming material generated in a vapor generating section to a vapor deposition head without lowering the temperature.

According to the present invention, there is provided a vapor deposition apparatus for performing a film forming process on an object to be processed by vapor deposition, a process chamber capable of performing a film forming process on the object to be processed, and a pressure reducing process disposed adjacent to the process chamber. A steam generating chamber; a steam outlet that is exposed to the inside of the processing chamber and jets steam toward the inside of the processing chamber ; a vapor deposition head in which the steam outlet is formed on an arbitrary surface; and the steam generation Disposed in the chamber, the vapor generating part for evaporating the film forming material, at least a part of the vapor generating part is disposed in the steam generating chamber, and provided in the pipe for communicating the vapor generating part and the vapor outlet, A control valve for controlling the supply of vapor of the film forming material, and a carrier gas for supplying the vapor generating part with a carrier gas for supplying the vapor of the film forming material evaporated in the vapor generating part to the vapor outlet and a supply pipe, the steam generating unit And a heater block that can be integrally heated, and a material container that can be filled with a film-forming material and a carrier gas supplied from the carrier gas supply pipe are passed through the heater container. A carrier gas path is disposed, and the vapor deposition head is supported by a partition wall that partitions the processing chamber and the vapor generation chamber in a posture in which the surface on which the vapor jet port is formed is exposed in the processing chamber, A vapor deposition apparatus is provided that is not exposed to the outside of the processing chamber and the outside of the vapor generation chamber.

At least a portion of the pre-Symbol partition wall may be a heat insulating material. The vapor generation unit and the control valve may be supported by the vapor deposition head.

  The film forming material is, for example, a film forming material for a light emitting layer of an organic EL element. The control valve is, for example, a bellows valve or a diaphragm valve. The exhaust mechanism may be provided in each of the processing chamber and the steam generation chamber. In addition, a transport path for supplying the vapor of the film forming material generated by the steam generating section to the vapor deposition head may be provided, and a plurality of steam generating sections may be attached to the transport path. Further, the flow path may not include a heater.

  According to the present invention, the film-forming material generated in the vapor generation section is supplied to the vapor outlet without being discharged to the outside of the processing chamber and the vapor generation chamber. Can be sent to the vapor deposition head without lowering the temperature. For this reason, the deposition of the film forming material in the pipe or the like can be prevented, the amount of vapor supplied from the vapor deposition head is stabilized, and a decrease in the vapor deposition rate is avoided.

  Also, if the vapor deposition head supports the vapor generation unit and the control valve, the vapor deposition unit becomes compact, and the temperature controllability of the entire vapor deposition unit is achieved by vacuum insulation inside the processing chamber and the vapor generation chamber. , Temperature uniformity is improved. By integrating the vapor generating part and the control valve into the vapor deposition head, the joints between the parts are eliminated, and the temperature drop is alleviated. Moreover, maintenance is also facilitated by taking out the vapor deposition unit integrally. Furthermore, if the steam generating part is a heater block that can be integrally heated, and if a material container and a carrier gas path are arranged inside the heater block, the heater for preheating the carrier gas can be omitted, thus saving the overall space. Can be planned.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, as an example of the vapor deposition process, an anode (anode) layer 1, a light emitting layer 3 and a cathode (cathode) layer 2 are formed on a glass substrate G as an object to be processed to form an organic EL element A. The processing system 10 to be manufactured will be specifically described as an example. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

  First, FIG. 1 is an explanatory diagram of an organic EL element A manufactured in the embodiment of the present invention. The most basic structure of the organic EL element A is a sandwich structure in which the light emitting layer 3 is sandwiched between the anode 1 and the cathode 2. The anode 1 is formed on the glass substrate G. For the anode 1, a transparent electrode made of, for example, ITO (Indium Tin Oxide) capable of transmitting the light of the light emitting layer 3 is used.

  Although the organic layer which is the light emitting layer 3 has one layer to a multilayer layer, in FIG. 1, it has a six-layer structure in which the first layer a1 to the sixth layer a6 are laminated. The first layer a1 is a hole transport layer, the second layer a2 is a non-light emitting layer (electron blocking layer), the third layer a3 is a blue light emitting layer, the fourth layer a4 is a red light emitting layer, the fifth layer a5 is a green light emitting layer, The sixth layer a6 is an electron transport layer. In the organic EL element A, a light emitting layer 3 (first layer a1 to sixth layer a6) is sequentially formed on the anode 1 on the surface of the glass substrate G, as will be described later, and a work function adjusting layer (not shown). The cathode 2 made of Ag, Mg / Ag alloy or the like is formed, and finally the whole is sealed with a nitride film (not shown) or the like.

  FIG. 2 is an explanatory diagram of the film forming system 10 for manufacturing the organic EL element A. FIG. The film forming system 10 includes a loader 11, a transfer chamber 12, a light emitting layer 3 vapor deposition device 13, a transfer chamber 14, and a work function adjusting layer film forming device 15 along the transport direction (rightward in FIG. 2) of the substrate G. The transfer chamber 16, the etching device 17, the transfer chamber 18, the sputtering device 19, the transfer chamber 20, the CVD device 21, the transfer chamber 22, and the unloader 23 are arranged in series in this order. The loader 11 is an apparatus for carrying the substrate G into the film forming system 10. The transfer chambers 12, 14, 16, 18, 20, and 22 are apparatuses for transferring the substrate G between the processing apparatuses. The unloader 23 is an apparatus for carrying the substrate G out of the film forming system 10.

  Here, the vapor deposition apparatus 13 concerning embodiment of this invention is demonstrated in detail. 3 is a cross-sectional view schematically showing the configuration of the vapor deposition apparatus 13, FIG. 4 is a perspective view of a vapor deposition unit 55 (56, 57, 58, 59, 60) provided in the vapor deposition apparatus 13, and FIG. A circuit diagram of the unit 55 (56, 57, 58, 59, 60), and FIG. 6 are perspective views of the steam generators 70, 71, 72.

  The vapor deposition apparatus 13 has a configuration in which a processing chamber 30 for forming a film on the substrate G and a vapor generation chamber 31 for evaporating a film forming material are disposed adjacent to each other in the vertical direction. The processing chamber 30 and the steam generation chamber 31 are formed inside a container body 32 made of aluminum, stainless steel or the like, and a partition wall made of a heat insulating material is provided between the processing chamber 30 and the steam generation chamber 31. 33 is partitioned.

  An exhaust hole 35 is opened in the bottom surface of the processing chamber 30, and a vacuum pump 36 that is an exhaust mechanism disposed outside the container body 32 is connected to the exhaust hole 35 via an exhaust pipe 37. Yes. By the operation of the vacuum pump 36, the inside of the processing chamber 30 is reduced to a predetermined pressure.

  Similarly, an exhaust hole 40 is opened in the bottom surface of the steam generation chamber 31, and a vacuum pump 41, which is an exhaust mechanism disposed outside the container body 32, is disposed in the exhaust hole 40 through an exhaust pipe 42. Connected. By the operation of the vacuum pump 41, the inside of the steam generation chamber 31 is reduced to a predetermined pressure.

  Above the processing chamber 30, a guide member 45 and a support member 46 that is moved along the guide member 45 by an appropriate drive source (not shown) are provided. A substrate holding unit 47 such as an electrostatic chuck is attached to the support member 46, and the substrate G to be deposited is held horizontally on the lower surface of the substrate holding unit 47.

  A carry-in port 50 and a carry-out port 51 are formed on the side surface of the processing chamber 30. In the vapor deposition apparatus 13, the substrate G carried in from the carry-in port 50 is held by the substrate holding unit 47, conveyed rightward in FIG. 3 in the processing chamber 30, and carried out from the carry-out port 51.

  Six vapor deposition units 55, 56, 57, 58, 59, and 60 that supply vapor of the film forming material are provided in the partition wall 33 that partitions the processing chamber 30 and the vapor generation chamber 31 in the direction in which the substrate G is transported. Are arranged along. These vapor deposition units 55 to 60 include a first vapor deposition unit 55 for vapor-depositing a hole transport layer, a second vapor deposition unit 56 for vapor-depositing a non-light-emitting layer, a third vapor deposition unit 57 for vapor-depositing a blue light-emitting layer, and a red light-emitting layer. The fourth vapor deposition unit 58 for vapor-depositing, the fifth vapor deposition unit 59 for vapor-depositing the green light-emitting layer, and the sixth vapor deposition unit 60 for vapor-depositing the electron transport layer are carried while being held by the substrate holder 47. The vapor of the film forming material is sequentially formed on the lower surface of the substrate G. Further, a vapor partition wall 61 is disposed between the vapor deposition units 55 to 60, and the vapors of the film forming materials supplied from the vapor deposition units 55 to 60 are not mixed with each other on the lower surface of the substrate G. The films are sequentially formed.

  Since each of the vapor deposition units 55 to 60 has the same configuration, the first vapor deposition unit 55 will be described as a representative. As shown in FIG. 4, the vapor deposition unit 55 has a piping case (transportation path) 66 attached below the vapor deposition head 65, and three vapor generating portions 70, 71, 72 and three The control valve 75, 76, 77 is attached.

  On the upper surface of the vapor deposition head 65, a vapor jet port 80 for ejecting vapor of the film forming material of the light emitting layer 3 of the organic EL element A is formed. The steam jets 80 are arranged in a slit shape along a direction orthogonal to the transport direction of the substrate G, and have a length that is the same as or slightly longer than the width of the substrate G. The substrate G is transported by the above-described substrate holding portion 47 while the vapor of the film forming material is ejected from the slit-shaped vapor ejection port 80, thereby forming a film on the entire lower surface of the substrate G.

  The vapor deposition head 65 is supported by a partition wall 33 that partitions the process chamber 30 and the vapor generation chamber 31 in a posture in which the upper surface on which the vapor jet port 80 is formed is exposed in the process chamber 30. The lower surface of the vapor deposition head 65 is exposed in the vapor generation chamber 31, a piping case (transportation path) 66 attached to the lower surface of the vapor deposition head 65, and vapor generation units 70 and 71 attached to the piping case 66. 72 and control valves 75, 76, 77 are all disposed in the steam generation chamber 31.

  The three steam generators 70, 71, 72 and the three control valves 75, 76, 77 have a corresponding relationship, and the control valve 75 controls the supply of the vapor of the film forming material generated by the steam generator 70. The control valve 76 controls the supply of vapor of the film forming material generated by the vapor generation unit 71, and the control valve 77 controls the supply of vapor of the film formation material generated by the vapor generation unit 72. It has become. Inside the piping case 66, branch pipes 81, 82, 83 connecting the steam generation units 70 to 72 and the control valves 75 to 77, and the control valves 75 to 77 from the steam generation units 70 to 72. A joining pipe 85 is provided for joining the vapors of the supplied film forming material and feeding them to the vapor deposition head 65.

  Each of the steam generators 70 to 72 has the same configuration. As shown in FIG. 6, the steam generators 70 to 72 are integrally formed with a plurality of heaters 90 attached to the side surfaces. A heater block 91 that can be heated is provided. The entire heater block 91 is heated by the heater 90 to a temperature at which the film forming material can be evaporated.

  In the center of the heater block 91, a material container 92 that can be filled with a film forming material (evaporation material) of the light emitting layer 3 of the organic EL element A is disposed. The material container 92 is heated by the heat of the heater block 91. The filled film forming material can be evaporated. A carrier gas supply pipe 93 for supplying a carrier gas such as Ar is connected to the side surface of the heater block 91. Inside the heater block 91, there is a carrier gas path 94 that bypasses the carrier gas supplied from the carrier gas supply pipe 93 inside the heater block 91, passes through a sufficient distance, and then supplies the carrier gas to the material container 92. Is formed. For this reason, the carrier gas supplied from the carrier gas supply pipe 93 passes through the carrier gas path 94 so that it is heated to substantially the same temperature as the heater block 91 and then supplied to the material container 92. It has become. When filling the film forming material, the inside of the steam generation chamber 31 is once opened to the atmosphere via a gate valve or the like (not shown) formed in the lower part of the container body 32, and the material of each of the steam generation units 70 to 72 is filled. The film forming material is replenished to the container 92. However, since the processing chamber 30 and the steam generation chamber 31 are separated by the partition wall 33, the inside of the processing chamber 30 is depressurized and the vacuum heat insulation state is maintained even when the film forming material is filled. The

  Each of the control valves 75 to 77 performs an opening / closing operation to evaporate the vapor of the film forming material that is evaporated in each of the vapor generation units 70 to 72 and supplied through the branch pipes 81 to 83 together with the carrier gas. It is possible to appropriately switch between a state of supplying to the merging pipe 85 side and a state of not supplying. As the control valves 75 to 77, a bellows valve, a diaphragm valve, or the like can be used. By the opening / closing operation of the control valves 75 to 77, the vapors of the film forming materials evaporated by the respective steam generation units 70 to 72 are joined at the joining pipe 85 in an arbitrary combination. Then, the vapors of the film forming materials joined together in the joining pipe 85 are ejected as they are from the steam outlet 80 on the upper surface of the vapor deposition head 65 without coming out of the processing chamber 30 and the steam generation chamber 31. It has become. Although the first vapor deposition unit 55 has been described as a representative, the other vapor deposition units 56 to 60 have the same configuration.

  In addition, the work function adjusting layer forming apparatus 15 shown in FIG. 2 is configured to form a work function adjusting layer on the surface of the substrate G by vapor deposition. The etching apparatus 17 is configured to etch each layer formed. The sputtering apparatus 19 is configured to form the cathode 2 by sputtering an electrode material such as Ag. The CVD apparatus 21 seals the organic EL element A by forming a sealing film made of a nitride film or the like by CVD or the like.

  In the film forming system 10 configured as described above, the substrate G carried in via the loader 11 is first carried into the vapor deposition apparatus 13 by the transfer chamber 12. In this case, the anode 1 made of ITO, for example, is formed in advance on the surface of the substrate G in a predetermined pattern.

  In the vapor deposition apparatus 13, the substrate G is held by the substrate holding unit 47 with the surface (film formation surface) facing downward. In addition, before the substrate G is carried into the vapor deposition apparatus 13 as described above, the inside of the processing chamber 30 and the vapor generation chamber 31 of the vapor deposition apparatus 13 are both set to a predetermined pressure in advance by the operation of the vacuum pumps 36 and 41. The pressure is reduced.

  Then, in the decompressed steam generation chamber 31, the vapor of the film-forming material evaporated in each of the steam generation units 70 to 72 is opened and closed in the merging pipe 85 in any combination by opening and closing the control valves 75 to 77. They are merged and supplied to the vapor deposition head 65 as they are without coming out of the vapor generation chamber 31. The vapor of the film forming material thus supplied to the vapor deposition head 65 is ejected from the vapor jet port 80 on the upper surface of the vapor deposition head 65 in the processing chamber 30.

  On the other hand, the substrate G held by the substrate holding part 47 is transported rightward in FIG. 3 in the decompressed processing chamber 30. During the movement, the vapor of the film forming material is supplied from the vapor jet port 80 on the upper surface of the vapor deposition head 65, and the light emitting layer 3 is formed and laminated on the surface of the substrate G.

  Then, the substrate G on which the light emitting layer 3 is formed in the vapor deposition apparatus 13 is then carried into the film formation apparatus 15 by the transfer chamber 14. Thus, in the film forming apparatus 15, the work function adjusting layer is formed on the surface of the substrate G.

  Next, the substrate G is carried into the etching apparatus 17 by the transfer chamber 16 and the shape of each film is adjusted. Next, the substrate G is carried into the sputtering apparatus 19 by the transfer chamber 18 to form the cathode 2. Next, the substrate G is carried into the CVD apparatus 21 by the transfer chamber 20, and the organic EL element A is sealed. The organic EL element A thus manufactured is carried out of the film forming system 10 via the transfer chamber 22 and the unloader 23.

  In the above film forming system 10, the vapor of the film forming material generated in the vapor generating units 70 to 72 in the vapor deposition apparatus 13 is not emitted to the outside of the processing chamber 30 and the vapor generating chamber 31, and is a vapor outlet. 80, and the vapor of the film forming material can be sent to the vapor deposition head 65 without lowering the temperature while maintaining the state of vacuum insulation. For this reason, deposition of film forming materials in the branch pipes 81, 82, 83, the control valves 75 to 77, the merging pipe 85, and the like can be prevented, the amount of vapor supplied from the vapor deposition head 65 is stabilized, and the vapor deposition rate is reduced. Avoided. Further, by heating the piping case 66 integrally, heaters for heating the branch pipes 81, 82, 83, the control valves 75 to 77, the merging pipe 85, etc. can be omitted, and the apparatus cost and running cost can be reduced. The device can also be made small.

  Moreover, if the vapor deposition units 55-60 which integrally attached the piping case 66, the vapor generation parts 70, 71, 72, and the control valves 75, 76, 77 under the vapor deposition head 65 as shown in the figure, each vapor deposition is adopted. The units 55 to 60 can be configured compactly. Moreover, maintenance becomes easy by taking out each vapor deposition unit 55-60 integrally.

  Further, as shown in FIG. 6, if the steam generators 70, 71, 72 are integrally heated to a heater block 91, and a material container 92 and a carrier gas path 94 are arranged inside the heater block 91, A heater for preheating the carrier gas can also be omitted, and space can be saved.

  As mentioned above, although an example of preferable embodiment of this invention was demonstrated, this invention is not limited to the form of illustration. It will be apparent to those skilled in the art that various changes or modifications can be made within the scope of the ideas described in the claims, and these are naturally within the technical scope of the present invention. It is understood that it belongs. For example, although it demonstrated based on the vapor deposition apparatus 13 of the light emitting layer 3 of the organic EL element A, this invention is applicable to the vapor deposition apparatus utilized for processing of other various electronic devices.

The substrate G to be processed can be applied to various substrates such as a glass substrate, a silicon substrate, a square shape, a round shape, and the like. Further, the present invention can be applied to a target object other than the substrate.

  In FIG. 2, along the transport direction of the substrate G, a loader 11, a transfer chamber 12, a light emitting layer 3 vapor deposition device 13, a transfer chamber 14, a work function adjusting layer film forming device 15, a transfer chamber 16, an etching device 17, A film forming system 10 having a configuration in which a transfer chamber 18, a sputtering apparatus 19, a transfer chamber 20, a CVD apparatus 21, a transfer chamber 22, and an unloader 23 are arranged in series is shown. However, as shown in FIG. 7, around the transfer chamber 100, for example, a substrate load lock device 101, a sputtering deposition film forming device 102, an alignment device 103, an etching device 104, a mask load lock device 105, a CVD device 106, and a substrate A film forming system 109 having a configuration in which the reversing device 107 and the vapor deposition film forming device 108 are arranged may be used. The number and arrangement of each processing device can be arbitrarily changed.

  For example, as shown in FIG. 8, the present invention can be applied to a processing system 117 in which six processing apparatuses 111 to 116 are provided around a transfer chamber 110. In the processing system 117 shown in FIG. 8, the substrate G is carried into and out of the transfer chamber 110 from the carry-in / out section 118 via the two load lock chambers 119, and each processing apparatus 111 to 116 is carried out by the transfer chamber 110. The substrate G is carried in and out.

  Further, for example, as shown in FIG. 9, the substrate G is configured to be directly loaded into and unloaded from the loading / unloading unit 120 via the load lock chamber 121 (without passing through the transfer chamber). It is also possible to apply the present invention in the processed processing system 123. As described above, the number and arrangement of processing devices provided in the processing system are arbitrary.

  Moreover, in the vapor deposition apparatus 13, the example which the board | substrate G carried in in the process chamber 30 from the carrying-in entrance 50 is carried out from the carrying-out exit 51 after a process was shown. However, a loading / unloading port serving both as a loading / unloading port may be provided, and the substrate G loaded into the processing chamber 30 from the loading / unloading port may be unloaded from the loading / unloading port after the processing. Note that after the processing, it is preferable to set the transport path so that the substrate G can be transported out of the processing chamber 30 in as short a time as possible.

  In addition, the material ejected from the vapor deposition head 65 of each vapor deposition unit 55-60 may be the same, or may differ. Further, the number of vapor deposition units is not limited to six, and is arbitrary. Further, the number of steam generation units and control valves provided in the vapor deposition unit is also arbitrary.

  The present invention can be applied to the field of manufacturing organic EL elements, for example.

It is explanatory drawing of an organic EL element. It is explanatory drawing of the film-forming system. It is sectional drawing which showed schematically the structure of the vapor deposition apparatus concerning embodiment of this invention. It is a perspective view of a vapor deposition unit. It is a circuit diagram of a vapor deposition unit. It is a perspective view of a steam generation part. It is explanatory drawing of the film-forming system which has arrange | positioned each processing apparatus around the transfer chamber. It is explanatory drawing of the processing system which provided the six processing apparatuses around the transfer chamber. It is explanatory drawing of the processing system comprised so that a board | substrate may be directly carried in with respect to each processing apparatus from a carrying in / out part.

A Organic EL element G Glass substrate 10 Processing system 11 Loader 11
12, 14, 16, 18, 20, 22 Transfer chamber 13 Emission layer deposition apparatus 15 Work function adjusting layer deposition apparatus 17 Etching apparatus 19 Sputtering apparatus 21 CVD apparatus 23 Unloader 30 Processing chamber 31 Vapor generation chamber 32 Container body 33 Partition walls 35, 40 Exhaust holes 36, 41 Vacuum pump 45 Guide member 47 Substrate holding part 55-60 Deposition unit 65 Deposition head 66 Piping case 70-72 Steam generating part 75-77 Control valve 80 Steam outlet 81-83 Branch pipe 85 Merge pipe 90 Heater 91 Heater block 92 Material container 93 Carrier gas supply pipe 94 Carrier gas path

Claims (11)

A vapor deposition apparatus for performing a film formation process on an object to be processed by vapor deposition,
A processing chamber capable of depressurization for film-forming the object to be processed;
A depressurizable steam generation chamber disposed adjacent to the processing chamber;
A steam outlet that is exposed to the inside of the processing chamber and jets steam toward the inside of the processing chamber;
A vapor deposition head in which the vapor outlet is formed on an arbitrary surface;
A vapor generation unit disposed in the vapor generation chamber for evaporating the film forming material;
At least a part of the steam generation chamber is disposed, and a pipe for communicating the steam generation unit and the steam outlet;
A control valve provided in the pipe for controlling the supply of vapor of the film forming material ;
A carrier gas for supplying the vapor of the film-forming material evaporated in the vapor generation part to the vapor outlet, and a carrier gas supply pipe for supplying the vapor generation part ,
The steam generation unit includes a heater block capable of integrally heating the whole, and a material container that can be filled with a film forming material inside the heater block and a carrier gas supplied from the carrier gas supply pipe. Arrange a carrier gas path through the material container;
The vapor deposition head is supported by a partition wall that partitions the processing chamber and the vapor generation chamber in a posture in which the surface on which the vapor ejection port is formed is exposed in the processing chamber,
The said piping is not exposed to the exterior of the said process chamber, and the said vapor generation chamber, The vapor deposition apparatus characterized by the above-mentioned.   The vapor deposition apparatus according to claim 1, wherein the vapor generation chamber includes a plurality of the vapor generation units.   The vapor deposition apparatus according to claim 1, wherein the pipe is not provided with a heater. Characterized in that each exhaust mechanism in the steam generating chamber and the processing chamber is connected, the vapor deposition device according to any one of claims 1-3. A vapor deposition apparatus for performing a film formation process on an object to be processed by vapor deposition,
A processing chamber for forming a film to be processed and a vapor generation chamber for evaporating a film forming material are disposed adjacent to each other,
An exhaust mechanism for depressurizing the interior of the processing chamber and the interior of the steam generation chamber;
An evaporation unit for supplying vapor of a film forming material to the inside of the processing chamber;
The vapor deposition unit includes:
A steam outlet for ejecting steam toward the inside of the processing chamber;
A vapor deposition head in which the vapor outlet is formed on an arbitrary surface;
A vapor generating section for evaporating the film forming material in the vapor generating chamber;
A control valve for controlling the supply of vapor of the film forming material;
A flow path for supplying the vapor of the film-forming material generated in the vapor generating section to the vapor outlet without taking the vapor out of the processing chamber and the vapor generation chamber;
A carrier gas for supplying the vapor of the film-forming material evaporated in the vapor generation part to the vapor outlet, and a carrier gas supply pipe for supplying the vapor generation part ,
The steam generation unit includes a heater block capable of integrally heating the whole, and a material container that can be filled with a film forming material inside the heater block and a carrier gas supplied from the carrier gas supply pipe. Arrange a carrier gas path through the material container;
The vapor deposition apparatus, wherein the vapor deposition head is supported by a partition wall that partitions the processing chamber and the vapor generation chamber in a posture in which a surface on which the vapor jet port is formed is exposed in the processing chamber . Characterized in that is supported with pre-Symbol vapor generator and the control valve before Symbol deposition head, deposition apparatus of claim 5. The vapor deposition apparatus according to claim 5 , wherein at least a part of the partition walls is made of a heat insulating material. The vapor deposition apparatus according to claim 5 , wherein the exhaust mechanism is provided in each of the processing chamber and the vapor generation chamber. Before SL provided transport path for supplying steam to the deposition head of the film forming material generated by the steam generating unit, the transport path, and a plurality of steam generating portion is mounted, wherein The vapor deposition apparatus in any one of claim | item 5 -8 . The vapor deposition apparatus according to claim 5 , wherein a heater is not provided in the flow path. The said control valve is a bellows valve or a diaphragm valve, The vapor deposition apparatus in any one of Claims 1-10 characterized by the above-mentioned.

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