JP5697500B2 - Vacuum deposition apparatus and thin film forming method - Google Patents

Description

  The present invention relates to a vacuum deposition apparatus and a thin film forming method.

  Since organic EL elements have high luminous efficiency and can assemble thin light-emitting devices, attention has recently been paid to applications for display devices and lighting equipment. A vacuum deposition apparatus is often used for forming an organic thin film.

FIG. 9 is an internal configuration diagram of a conventional vacuum deposition apparatus 100.
The vacuum deposition apparatus 100 includes evaporation sources 133h and 133d that generate vapor of a thin film material, a vacuum chamber 111 in which a film formation target 151 is disposed, and a vacuum exhaust device 112 that evacuates the vacuum chamber 111. ing.

The evaporation sources 133h and 133d include crucibles 161h and 161d that store the thin film material, and heaters 162h and 162d that heat the thin film material in the crucibles 161h and 161d. When the thin film material in the crucibles 161h and 161d is heated by the heaters 162h and 162d, vapor of the thin film material is generated.
The evaporation sources 133h and 133d are disposed in the vacuum chamber 111. Film thickness sensors 118h and 118d are disposed above the evaporation sources 133h and 133d.

  After aligning the film formation target 151 and the mask plate 152 in the evacuated vacuum chamber 111, when vapor of the thin film material is released from the evaporation sources 133 h and 133 d, the vapor is exposed to the surface of the film formation target 151. The organic thin film having the same shape as the opening of the mask plate 152 is formed on the surface of the film formation target 151, reaching the portion exposed from the opening of the mask plate 152.

  In the conventional vacuum deposition apparatus 100, since the evaporation sources 133h and 133d are stationary in the vacuum chamber 111, it is difficult to form a thin film having a uniform thickness on the film-forming target 151 having a large area. There was a problem.

  Further, in the conventional vacuum vapor deposition apparatus 100, since the evaporation of the thin film material continues even while the film formation target 151 is replaced, the utilization efficiency of the thin film material is low, and the vapor adheres to the wall surface of the vacuum chamber 111 and becomes dust. There was a problem that it was easy to become.

Furthermore, since the crucibles 161h and 161d are disposed in the vacuum chamber 111, it was necessary to break the vacuum atmosphere in the vacuum chamber 111 to fill the crucibles 161h and 161d with a thin film material, resulting in poor production efficiency. . Further, the distance between the thin film material and the film formation target 151 is short, and the probability that dust generated in the evaporation sources 133h and 133d hits the film formation target 151 is high.
In addition, since the volumes of the crucibles 161h and 161d are large, when the amount of the thin film material is small, it is difficult to adjust the vapor generation rate and it is difficult to form the film.

Patent Document 1 discloses a method of forming a film while horizontally moving an evaporation source in a vacuum layer.
According to the method disclosed in Patent Document 1, a thin film having a uniform thickness can be formed on a film formation target, but problems other than film thickness uniformity in the conventional vacuum vapor deposition apparatus 100 can be solved. There wasn't.

Further, according to the method of Patent Document 1, since the evaporation source is horizontally moved, only two evaporation sources can be arranged in one vacuum chamber, and a maximum of two layers can be formed in one vacuum chamber. There wasn't. Since the organic EL element includes a thin film of many layers more than two layers, it is necessary to increase the number of vacuum tanks in the organic EL element manufacturing apparatus using the vacuum deposition apparatus, and the RGB coating display manufacturing apparatus. In this case, since two or more alignment devices for the mask plate and the film formation target are required, there is a disadvantage that the cost is high.
Further, the crucible has a large volume, and particularly when the co-evaporation of the thin film material of the host and the dopant is performed, the scanning span is long, so that the moving device is expensive.

Japanese Patent No. 4149771

  The present invention was created in order to solve the above-described disadvantages of the prior art, and its purpose is to provide a vacuum deposition apparatus that can form a thin film having a uniform thickness on a large-area substrate with high use efficiency of a thin film material. And a method of forming a thin film.

The present invention in order to solve the above problems, a vacuum chamber the film-forming target is placed, is disposed outside the vacuum chamber, a thin film material is disposed, and the evaporation source for generating a vapor of the thin film material, and evacuation device for evacuating the inner portion of said vacuum chamber, wherein the vapor from the evaporation source is supplied, anda release device for releasing the vapor into the inner portion of the vacuum chamber, said from the release device A vacuum deposition apparatus that causes the vapor released into the vacuum chamber to reach the film formation target and forms a thin film on the surface of the film formation target, wherein the discharge apparatus is disposed inside the vacuum chamber. The evaporation source is a vacuum deposition apparatus having a moving device that moves together the emission device and the evaporation source that supplies the vapor to the emission device while the evaporation source is disposed outside the vacuum chamber. .
The present invention is a vacuum deposition apparatus, wherein a plurality of the evaporation sources are connected to one of the emission apparatuses.
The present invention is a vacuum vapor deposition apparatus, the inner portion of the vacuum chamber, the discharge device is a plurality of arranged, each said emission device, wherein different said evaporation source disposed outside the vacuum chamber Steam is supplied and the moving device is a vacuum deposition device configured to move a plurality of the discharging devices together.
The present invention is a vacuum vapor deposition apparatus, the inner portion of the vacuum chamber, the discharge device is two located, the mobile device is configured to two of the discharge device so as to move separately vacuum It is a vapor deposition device.
The present invention is located outside the vacuum chamber, a thin film material to generate a vapor of the thin film material in the evaporation source located, by supplying the steam release device which is arranged inside the vacuum chamber, wherein from the discharge device to release the vapor into the inner portion of the vacuum chamber, the vapor is reached before Symbol film-forming target disposed on the inner portion of the vacuum chamber to form a thin film on a surface of the film-forming target A method of forming a thin film, wherein the evaporation source is located outside the vacuum chamber, and the vapor is supplied from the evaporation source and the evaporation source in a state where the discharge device is located inside the vacuum chamber. A thin film forming method in which the thin film is formed on the surface of the film formation target object while moving the discharge device to be moved together .
The present invention is a method of forming a thin film, wherein vapor of a thin film material is supplied from one evaporation source to the emission device using the emission device to which a plurality of the evaporation sources are connected. to release the vapor into the inner portion of the vacuum chamber, the release device while moving together with the plurality of the evaporation sources, the allowed to reach the vapor deposition object, the surface of the film-forming target After forming one thin film, the supply of the vapor from the one evaporation source to the emission device is stopped, and the vapor of the thin film material is supplied from the other evaporation source to the emission device, from the emission device. to release the vapor into the inner portion of the vacuum chamber, the release device while moving together with the plurality of the evaporation sources, the allowed to reach the vapor deposition object, the surface of the film-forming target A thin film forming method for forming another thin film.
The present invention provides a method of forming a thin film, the release device by using a plurality, is the steam respectively emitted from a plurality of the discharge device on the inner portion of the vacuum chamber, moving the plurality of the discharge device with However, it is a thin film forming method in which the vapor released from a plurality of the discharge devices reaches the film formation target together to form a thin film on the surface of the film formation target.
The present invention provides a method of forming a thin film, the release device two using, to release the vapor into the inner portion of the vacuum chamber from one said emission device, while moving the one of the discharge device, wherein After the vapor reaches the film formation target and forms one thin film on the surface of the film formation target, the discharge of the vapor from the one discharge device is stopped and the vacuum is discharged from another discharge device. to release the vapor into the inner part of the tank, while moving the separate emission device, to reach the steam in the film-forming target, formation of a thin film to form another thin film on the surface of the film-forming target Is the method.

  Since the use efficiency of the thin film material is high, the cost of the material can be reduced. In addition, since a plurality of layers can be formed in one vacuum chamber, the cost of the film forming apparatus can be reduced. A thin film with a uniform thickness can be formed on a large-area substrate, and the organic EL display device can be enlarged.

The top view of the vacuum evaporation system of the first example of the present invention The internal side view of the vacuum evaporation system of the first example of the present invention Internal configuration diagram of organic EL device manufacturing equipment The top view of the vacuum evaporation system of the 2nd example of the present invention The top view of the vacuum evaporation system of the 3rd example of the present invention The internal side view of the vacuum evaporation system of the third example of the present invention The top view of the vacuum evaporation system of the 4th example of the present invention Internal side view of the vacuum deposition apparatus of the fourth example of the present invention Internal configuration diagram of conventional vacuum evaporation system Expanded side view of the first film thickness sensor

<Structure of vacuum deposition apparatus of first example>
The structure of the vacuum deposition apparatus of the first example of the present invention will be described.
FIG. 1 is a plan view of a vacuum deposition apparatus 10a of the first example, and FIG. 2 is an internal side view thereof.

  The vacuum deposition apparatus 10a of the first example includes evaporation sources 31, 32, 33h, 33d, 34h, 34d, 35h, 35d, and 36 (hereinafter abbreviated as 31 to 36) that generate vapor of a thin film material, and a film formation target. A vacuum chamber 11 in which the object 51 is disposed, a vacuum exhaust device 12 that evacuates the vacuum chamber 11, and a discharge device 21 that is supplied with vapor from the evaporation sources 31 to 36 and releases the vapor into the vacuum chamber 11. Have.

The vacuum evacuation device 12 is connected to the inside of the vacuum chamber 11 so that the inside of the vacuum chamber 11 can be evacuated.
The discharge device 21 is a cylindrical housing. Here, the discharge device 21 is disposed in the vacuum chamber 11 with its longitudinal direction parallel to the horizontal plane, and a plurality of discharge holes 22 are formed on the surface facing the upper side of the discharge device 21. Is provided. The discharge holes 22 are arranged in a line along the longitudinal direction of the discharge device 21.
In this embodiment, one direction parallel to the horizontal plane and perpendicular to the longitudinal direction of the discharge device 21 is referred to as a moving direction. Reference numeral 5 indicates a moving direction.

The vacuum deposition apparatus 10a of the first example has first and second pipes 25 ₁ and 25 ₂ . The first and second pipes 25 ₁ , 25 ₂ are linearly formed and are airtightly inserted into the wall surface of the vacuum chamber 11 using the bellows 14 in a state of being directed parallel to the moving direction 5. One end of each of the second pipes 25 ₁ and 25 ₂ is connected to one end of the discharge device 21.

  Each of the evaporation sources 31 to 36 includes a crucible for storing a thin film material and a heater for heating the thin film material in the crucible. When the thin film material in the crucible is heated by a heater, vapor of the thin film material is generated.

In the present embodiment, the respective evaporation sources 31 to 36 are disposed outside the vacuum chamber 11, and here, the evaporation sources denoted by reference numerals 31, 32, 33h, 34h, and 35h are denoted by reference numerals 41, 42, 43h, 44h, The evaporation source indicated by reference numerals 33d, 34d, 35d, and 36 is connected to the first piping 25 ₁ via a 45h valve, and the second piping 25 is provided via valves 43d, 44d, 45d, and 46 that can be opened and closed. Connected to ₂ .

Code 41,42,43H, 44h, when valve 45h is open, the code 31,32,33H, 34h, steam generated in the evaporation source 35h is first pipe 25 discharge device 21 through the ₁ In the closed state, the generated steam is shut off and is not supplied into the discharge device 21. When the valves 43d, 44d, 45d, and 46 are in the open state, the steam generated by the evaporation sources 33d, 34d, 35d, and 36 is supplied into the discharge device 21 through the second pipe 25 _2. In the closed state, the generated steam is blocked and is not supplied into the discharge device 21.

First and second backflow prevention holes 26 ₁ , 26 ₂ are provided at the connection portions of the first and _second pipes 25 ₁ , 25 _{2 with} the discharge device 21, and the first and second pipes 25 ₁ , 25 ₂ , The steam supplied to the discharge device 21 from one of the 25 ₂ pipes is prevented from flowing back into the other pipe and contaminating.
The vapor supplied into the discharge device 21 is discharged from the discharge hole 22 into the vacuum chamber 11.

The vacuum deposition apparatus 10a of the first example of the present invention includes a moving device 15 that moves the evaporation sources 31 to 36 together with the discharge device 21 in the same direction at the same speed.
In this embodiment, the moving device 15 is a motor, is connected to the evaporation sources 31 to 36, transmits power to the evaporation sources 31 to 36, and the evaporation sources 31 to 36 are connected to the first and second pipes 25 ₁ , 25. ₂ and the discharge device 21 are configured to move along the moving direction 5 in the same direction at the same speed.

  When the release device 21 is moved along the moving direction 5 by the moving device 15 in a state where the plate-shaped film formation target 51 is horizontally disposed at a position where the discharge hole 22 in the vacuum chamber 11 can face, the release device 21 moves in one plane parallel to the surface of the film formation target 51, and the evaporation sources 31 to 36 are the same in the same direction as the discharge device 21 in other planes parallel to the surface of the film formation target 51. It moves at speed.

  When the vapor is discharged from the discharge hole 22 while moving the discharge device 21 at a constant speed by the moving device 15, the vapor reaches the film formation target 51 and has a uniform film thickness on the surface of the film formation target 51. The thin film is formed.

The first and second pipes 25 ₁ and 25 ₂ are hermetically inserted into the vacuum chamber 11 using the bellows 14, and the first and second pipes 25 ₁ and 25 ₂ are moved by the moving device 15. In addition, air does not leak into the vacuum chamber 11 from the insertion location.

The vacuum deposition apparatus 10a of the first example includes a deposition preventing plate 17 and first and second film thickness sensors 18 ₁ and 18 ₂ .
In the present embodiment, first and second measurement nozzles 27 ₁ and 27 ₂ are provided in portions facing upward of the first and second pipes 25 ₁ and 25 ₂ , and the first and second pipes 25 are provided. A part of the steam moving in the ₁ and 25 ₂ is discharged from the first and second measuring nozzles 27 ₁ and 27 ₂ .

The deposition preventing plate 17 is formed in a band shape by a material that shields steam, and is horizontally disposed above the first and second pipes 25 ₁ and 25 _{2 with} the longitudinal direction thereof being parallel to the moving direction 5. The first and second measurement nozzles 27 ₁ and 27 ₂ are opposed to the deposition preventing plate 17. Even if the first and second pipes 25 ₁ , 25 ₂ are moved by the moving device 15, the facing of the first and second measurement nozzles 27 ₁ , 27 ₂ and the deposition preventing plate 17 is maintained, and the first The vapor discharged from the second measurement nozzles 27 ₁ and 27 ₂ is shielded by the deposition preventing plate 17 so as not to adhere to the wall surface of the vacuum chamber 11 and the film formation target 51.

In the present embodiment, when the discharge device 21 is arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51 arranged in the vacuum chamber 11, the deposition preventing plate 17. Of these, openings are provided at positions facing the first and second measurement nozzles 27 ₁ and 27 ₂ .

The first and second film thickness sensors 18 ₁ and 18 ₂ have the same structure, and the first film thickness sensor 18 ₁ will be described as a representative.
FIG. 10 is an enlarged side view of the first film thickness sensor 18 ₁ .

Here, the first film thickness sensor 18 ₁ includes a plurality of crystal resonators 19a, a cylindrical casing 19b, a rotating device 19c, and a control device 19d.
The housing 19b is disposed directly above the opening of the deposition preventing plate 17 with the central axis oriented parallel to the horizontal plane, and each crystal resonator 19a is fixed to the outer peripheral side surface of the housing 19b. . The rotating device 19c is a motor, and is connected to the housing 19b. The rotating device 19c is configured to transmit power to the housing 19b so that the housing 19b can be rotated about its central axis. When the casing 19b is rotated around the central axis by the rotating device 19c, each crystal resonator 19a is exposed from the opening of the deposition preventing plate 17 one by one.

  When the vapor adheres to the crystal unit 19a, the control device 19d measures the film thickness of the adhered film, transmits a control signal to the evaporation source based on the measurement result, and controls the heating temperature of the thin film material at the evaporation source. It is configured as follows.

<Structure of organic EL device manufacturing apparatus>
The structure of the organic EL element manufacturing apparatus using the vacuum vapor deposition apparatus 10a of the first example of the present invention will be described.
FIG. 3 shows an internal configuration diagram of the organic EL element manufacturing apparatus 60.
The organic EL element manufacturing apparatus 60 includes a vacuum deposition apparatus 10a of the first example, a transfer chamber 66, a load / unload chamber 61, a substrate pretreatment chamber 62, an electrode film formation chamber 63, and a sealing chamber 64. And a mask chamber 65.

The vacuum chamber 11, the loading / unloading chamber 61, the substrate pretreatment chamber 62, the electrode film forming chamber 63, the sealing chamber 64, and the mask chamber 65 of the vacuum deposition apparatus 10 a of the first example are provided in the transfer chamber 66. Each is airtightly connected.
The carry-in / out chamber 61, the substrate pretreatment chamber 62, the electrode film forming chamber 63, the sealing chamber 64, and the mask chamber 65 are each connected to a transfer chamber 66 by a vacuum exhaust device (not shown). It is comprised so that the inside of 61-66 can be evacuated.

  A transfer device 68 is arranged in the transfer chamber 66. The transfer device 68 does not expose the film formation target 51 and the mask plate 52 to the atmosphere, passes through the transfer chamber 66, and the vacuum chamber 11 of each of the chambers 61 to 65 and the vacuum deposition apparatus 10 a of the first example. It is configured to be able to carry in and out.

<Method for producing organic EL element>
A method for manufacturing an organic EL element using the organic EL element manufacturing apparatus 60 will be described.

(Substrate loading process)
The inside of each chamber 61-66 and the inside of the vacuum chamber 11 of the vacuum vapor deposition apparatus 10a of the first example are evacuated. Thereafter, the vacuum evacuation is continued to maintain the vacuum atmosphere in each of the chambers 61 to 66 and the vacuum chamber 11.
The film formation target 51 is loaded into the loading / unloading chamber 61 while maintaining the vacuum atmosphere within the loading / unloading chamber 61. In this embodiment, a substrate having an anode electrode formed in advance on the surface is used as the film formation target 51.

(Substrate pretreatment process)
The film forming object 51 is moved from the loading / unloading chamber 61 into the substrate pretreatment chamber 62 by the transfer device 68.
The substrate pretreatment chamber 62 is configured to generate plasma such as oxygen inside.
Plasma is generated in the substrate pretreatment chamber 62 and radicals are brought into contact with the surface of the film formation target 51 to remove dust and the like attached to the surface of the anode electrode of the film formation target 51.

(Film formation preparation process)
Next, the film formation target 51 is moved from the substrate pretreatment chamber 62 into the vacuum chamber 11 of the vacuum deposition apparatus 10a of the first example by the transfer device 68.

Referring to FIGS. 1 and 2, a hole injection layer thin film material is disposed at the evaporation source 31, a hole transport layer thin film material is disposed at the evaporation source 32, and red light is emitted from the evaporation sources 33 h and 33 d. The host of the layer and the thin film material of the dopant are respectively disposed, the host of the green light emitting layer is disposed in the evaporation source of reference numerals 34h and 34d, and the thin film of the dopant is disposed in the evaporation source of reference numerals 35h and 35d, respectively. A thin film material of the dopant is disposed, and a thin film material of the electron transport layer is disposed in the evaporation source 36.
That is, the thin film material of the host is disposed in the evaporation source connected to the first pipe 25 _1, and the thin film material of the dopant is disposed in the evaporation source connected to the second pipe 25 ₂ .
Each valve 41, 42, 43h, 43d, 44h, 44d, 45h, 45d, 46 (hereinafter abbreviated as 41 to 46) is kept closed.

  The thin film material is heated by each of the evaporation sources 31 to 36 to generate steam. Since each of the evaporation sources 31 to 36 has a heater and can heat a plurality of types of thin film materials to different temperatures, it can be adjusted to the evaporation temperature and evaporation rate of various thin film materials. Further, when a plurality of evaporation sources are filled with the same type of thin film material, some thin film materials are prevented from being deteriorated by being heated to a high temperature for a long time.

(Hole injection layer deposition process)
The moving device 15 moves the discharging device 21 and the evaporation sources 31 to 36 together at the same speed in the same direction along the moving direction 5, and the discharging device 21 is moved to the starting point side in the moving direction 5 of the film formation target 51. It is moved to the starting point side in the moving direction 5 from the end of and is stopped. At this time, the first and second measurement nozzles 27 ₁ and 27 ₂ face the crystal resonators of the first and second film thickness sensors 18 ₁ and 18 ₂ , respectively.

The valve 41 is opened. Vapor of the thin film material of the hole injection layer produced by the evaporation source code 31 is supplied to the discharge device 21 through the first pipe 25 _1, it is discharged from the discharge holes 22. The discharge device 21 is arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, and the vapor released from the discharge holes 22 reaches the film formation target 51. do not do.

The vapor discharged from the first measuring nozzle 27 ₁ reaches the crystal resonator of the first film thickness sensor 18 ₁ and adheres thereto. The first thickness sensor 18 ₁ of the control device measures the film thickness of the deposited film attached to the crystal oscillator, to control the heating temperature of the thin film material in the evaporation source code 31, based on the measurement results.

  The moving device 15 moves the discharging device 21 and the evaporation sources 31 to 36 together at the same speed along the moving direction 5 in one direction (here, the direction from the start point side to the end point side). Is passed below the film formation target object 51 and moved to the end point side from the end part on the end point side in the moving direction 5 of the film formation target object 51. Next, the discharge device 21 and the evaporation sources 31 to 36 are moved together at the same speed along the moving direction 5 in the direction opposite to the one direction (here, the direction from the end point side to the start point side). 21 is again passed under the film formation target 51, moved from the end of the film formation target 51 on the start point side in the movement direction 5 to the start point side in the movement direction 5, and stopped.

While the discharge device 21 passes below the film formation target 51, the vapor released from the discharge hole 22 reaches and adheres to the surface of the film formation target 51, and the surface of the anode electrode of the film formation target 51 Then, a hole injection layer is formed.
After forming the hole injection layer, the valve 41 is closed to stop the supply of vapor to the discharge device 21.

(Hole transport layer deposition process)
The housing of the first film thickness sensor 18 ₁ is rotated to expose another crystal resonator from the opening of the deposition preventing plate 17. In this manner, the thickness of the first thickness sensor 18 ₁ to different types of deposition films even steam enters the thin film material can be accurately measured.

And a valve code 42 in an open state, the vapor of the thin film material of the hole-transporting layer produced by the evaporation source code 32 is supplied to the first pipe 25 discharge device 21 through the _1, discharged from the discharge hole 22 Let A hole transport layer is formed on the surface of the hole injection layer of the film formation target 51 in the same manner as the film formation step of the hole injection layer.
After forming the hole transport layer, the valve 42 is closed to stop the supply of vapor to the discharge device 21.

(Red light emitting layer deposition process)
Referring to FIG. 3, a plurality of mask plates 52 are arranged in the mask chamber 65. The mask plate 52 is taken out from the mask chamber 65 by the transfer device 68 and is carried into the vacuum chamber 11 of the vacuum vapor deposition device 10a of the first example.

With reference to FIGS. 1 and 2, the vacuum deposition apparatus 10 a of the first example includes an alignment apparatus 55 that aligns a film formation target 51 and a mask plate 52.
A film formation region in which red, green, and blue light-emitting layers are to be formed on the surface of the hole transport layer of the film formation target 51 is determined in advance.

The alignment device 55 performs alignment so that the red light emitting layer film formation region on the surface of the film formation target 51 overlaps the opening of the mask plate 52 and maintains the relative positional relationship with the film formation target 51. The mask plate 52 is bonded together.
The housing of the first film thickness sensor 18 ₁ is rotated to expose another crystal resonator from the opening of the deposition preventing plate 17.

The valves 43h and 43d are opened. The vapor of the red light emitting layer host and the dopant thin film material generated by the evaporation sources 33h and 33d is supplied to the emission device 21 through the first and second pipes 25 ₁ and 25 ₂ , respectively. And are discharged from the discharge hole 22.
The discharge device 21 is arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, and the vapor released from the discharge holes 22 reaches the film formation target 51. do not do.

The vapors emitted from the first and second measurement nozzles 27 ₁ and 27 ₂ reach and adhere to the crystal resonators of the first and second film thickness sensors 18 ₁ and 18 ₂ , respectively. The control devices of the first and second film thickness sensors 18 ₁ and 18 ₂ measure the film thickness of the attached film attached to the crystal resonator, and based on the measurement result, the thin film material at the evaporation sources 33h and 33d is measured. Each heating temperature is controlled.

  The moving device 15 moves the discharging device 21 and the evaporation sources 31 to 36 together at the same speed along the moving direction 5 in one direction (here, the direction from the start point side to the end point side). Is passed below the film formation target object 51 and moved to the end point side from the end part on the end point side in the moving direction 5 of the film formation target object 51. Next, the discharge device 21 and the evaporation sources 31 to 36 are moved together at the same speed along the moving direction 5 in the direction opposite to the one direction (here, the direction from the end point side to the start point side). 21 is again passed under the film formation target 51, moved from the end of the film formation target 51 on the start point side in the movement direction 5 to the start point side in the movement direction 5, and stopped.

While the discharge device 21 passes under the film formation target 51, the vapor released from the discharge hole 22 forms a red light emitting layer exposed from the opening of the mask plate 52 in the surface of the film formation target 51. The red light emitting layer is formed in the film formation region of the red light emitting layer.
After the red light emitting layer is formed, the valves 43h and 43d are closed to stop the supply of steam to the discharge device 21.

(Green light emitting layer deposition process)
The film forming object 51 and the mask plate 52 are separated by the alignment device 55. Next, the green light emitting layer deposition region on the surface of the deposition target 51 is aligned so as to overlap the opening of the mask plate 52, and the deposition target 51 and the mask plate 52 are maintained while maintaining the positional relationship. to paste together.
The housings of the first and second film thickness sensors 18 ₁ and 18 ₂ are rotated to expose the other crystal resonators from the openings of the deposition preventing plate 17.

The valves 44h and 44d are opened, the host of the green light emitting layer and the vapor of the dopant thin film material generated by the evaporation source 34h and 34d are connected to the first and second pipes 25 ₁ and 25 ₂ , respectively. Then, the vapor is supplied to the discharge device 21 and the vapor mixed in the discharge device 21 is discharged from the discharge hole 22. In the same manner as the red light emitting layer film forming step, a green light emitting layer is formed in the film forming region of the green light emitting layer on the surface of the film formation target 51.
After the green light emitting layer is formed, the valves 44h and 44d are closed to stop the supply of vapor to the discharge device 21.

(Blue light emitting layer deposition process)
The film forming object 51 and the mask plate 52 are separated by the alignment device 55. Next, the film formation region of the blue light emitting layer on the surface of the film formation target 51 is aligned so as to overlap the opening of the mask plate 52, and the film formation target 51 and the mask plate 52 are maintained while maintaining the positional relationship. to paste together.
The housings of the first and second film thickness sensors 18 ₁ and 18 ₂ are rotated to expose the other crystal resonators from the openings of the deposition preventing plate 17.

The valves 45h and 45d are opened, the host of the blue light emitting layer and the vapor of the dopant thin film material generated by the evaporation source 35h and 35d are connected to the first and second pipes 25 ₁ and 25 ₂ , respectively. Then, the vapor is supplied to the discharge device 21 and the vapor mixed in the discharge device 21 is discharged from the discharge hole 22. In the same manner as the red light emitting layer film forming step, the blue light emitting layer is formed in the film forming region of the blue light emitting layer on the surface of the film formation target 51.

After the blue light emitting layer is formed, the valves 45h and 45d are closed to stop the supply of vapor to the discharge device 21. The film forming object 51 and the mask plate 52 are separated by the alignment device 55.
Referring to FIG. 3, the mask plate 52 is taken out from the vacuum chamber 11 of the vacuum vapor deposition apparatus 10 a of the first example by the transfer device 68 and stored in the mask chamber 65.

(Electron transport layer deposition process)
Referring to FIGS. 1 and ₂ , the casing of the second film thickness sensor 18 ₂ is rotated to expose another crystal resonator from the opening of the deposition preventing plate 17.

The valve 46 is opened, and the vapor of the thin film material of the electron transport layer generated by the evaporation source 36 is supplied into the discharge device 21 through the second pipe 25 ₂ and discharged from the discharge hole 22. Let In the same manner as the hole injecting layer forming step, an electron transporting layer is formed on the surface of the red, green and blue light emitting layers of the film forming target 51.
After forming the electron transport layer, the valve 46 is closed to stop the supply of vapor to the discharge device 21.

(Cathode electrode deposition process)
Referring to FIG. 3, the film formation target 51 is moved from the vacuum chamber 11 of the vacuum vapor deposition apparatus 10 a of the first example into the electrode film formation chamber 63 by the transfer device 68.

The electrode film forming chamber 63 is configured to generate vapor of an electrode material such as aluminum inside.
A vapor of the electrode material is generated in the electrode film forming chamber 63, the vapor of the electrode material reaches the surface of the film formation target 51, and a thin film of the electrode material is formed on the surface of the electron transport layer of the film formation target 51. A cathode electrode is formed.

(Sealing process)
The film forming object 51 is moved from the electrode film forming chamber 63 into the sealing chamber 64 by the transfer device 68.

The sealing chamber 64 is configured so that a sealing material gas can be introduced therein. In this embodiment, SiH ₄ gas and NH ₃ gas are used as the sealing material gas.
A sealing material gas is introduced into the sealing chamber 64 and reacted on the surface of the film formation target 51 to form a sealing film that is a thin film of SiN _{x on} the surface of the cathode electrode of the film formation target 51.

In this example, a SiN _x thin film was formed as the sealing film. However, the sealing film is not limited to the SiN _x thin film, and is a dense inorganic thin film different from SiN _x , or an inorganic thin film and an organic polymer thin film. A laminated film having a structure in which thin films are alternately laminated may be formed.

(Substrate unloading process)
The film forming object 51 is moved from the sealing chamber 64 into the loading / unloading chamber 61 by the transfer device 68. While maintaining the vacuum atmosphere in the loading / unloading chamber 61, the film formation target 51 is unloaded from the loading / unloading chamber 61 and delivered to the subsequent process.
In this way, an organic EL element is formed.

According to the vacuum deposition apparatus 10a of the first example of the present invention, a plurality of thin films of three or more layers can be formed in one vacuum chamber 11, and the organic EL element manufacturing apparatus 60 becomes more compact than before, The cost of the organic EL element manufacturing apparatus 60 can be reduced. In addition, it is possible to avoid contamination of the thin film with dust and moisture. Furthermore, since the alignment of the red light emitting layer film forming process to the blue light emitting layer film forming process can be performed with a single alignment device 55, the cost required for the alignment device 55 can be reduced as compared with the prior art.
Further, since the release of the steam can be controlled by opening and closing the valves 41 to 46, the use efficiency of the thin film material is high, and it is possible to prevent the steam from adhering to the wall surface of the vacuum chamber 11 and generating dust.

<Structure of vacuum deposition apparatus of second example>
The structure of the vacuum deposition apparatus of the second example of the present invention will be described.
FIG. 4 is a plan view of the vacuum deposition apparatus 10b of the second example. In the vacuum deposition apparatus 10b of the second example, parts having the same structure as the vacuum deposition apparatus 10a of the first example are denoted by the same reference numerals and description thereof is omitted.

The vacuum deposition apparatus 10b of the second example has first and second ejection apparatuses 21 ₁ and 21 ₂ instead of the ejection apparatus 21 of the vacuum deposition apparatus 10a of the first example.
The structure of the first and _second discharge devices 21 ₁ and 21 ₂ is the same as that of the discharge device 21 of the vacuum deposition apparatus 10a of the first example, and the description thereof is omitted. The discharge holes of the first and second discharge devices 21 ₁ and 21 ₂ are called first and second discharge holes, and are denoted by reference numerals 22 ₁ and 22 ₂ . The first and second discharge devices 21 ₁ and 21 ₂ are arranged at the same height in the vacuum chamber 11 with their longitudinal directions oriented parallel to each other.

In this embodiment, a direction parallel to the horizontal plane and perpendicular to the longitudinal direction of the first and second discharge devices 21 ₁ and 21 ₂ is referred to as a moving direction. Reference numeral 5 indicates a moving direction.
The first and second pipes 25 ₁ and 25 ₂ are connected to the first and second discharge devices 21 ₁ and 21 ₂ , respectively.

The moving device 15 transmits power to the evaporation sources 31 to 36, and the evaporation sources 31 to 36 are connected to the first and second pipes 25 ₁ , 25 ₂ and the first and second discharge devices 21 ₁ , 21 ₂ . Together, it is configured to move along the moving direction 5 in the same direction at the same speed.

The vacuum deposition apparatus 10b of the second example has a deposition preventing plate 57 instead of the deposition preventing plate 17 of the vacuum deposition apparatus 10a of the first example, and the first and second vacuum deposition apparatuses 10a of the first example. In place of the film thickness sensors 18 ₁ and 18 ₂ , first and second film thickness sensors 58 ₁ and 58 ₂ are provided.

The deposition preventing plate 57 is formed in a band shape by a material that shields the vapor, and in the state where the longitudinal direction is parallel to the longitudinal direction of the first and second discharge devices 21 ₁ and 21 ₂ . The first and second discharge holes 22 ₁ and 22 ₂ are horizontally arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51 arranged in the above. Yes.

When the first and second discharge devices 21 ₁ and 21 ₂ are arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, the first and second discharge devices The holes 22 ₁ , 22 ₂ face the deposition preventing plate 57, and the vapor emitted from the first and second discharge holes 22 ₁ , 22 ₂ is shielded by the deposition preventing plate 57, and the wall of the vacuum chamber 11 and the film formation It does not adhere to the object 51.
The structures of the first and second film thickness sensors 58 ₁ and 58 ₂ are the same as those of the first and second film thickness sensors 18 ₁ and 18 ₂ of the vacuum deposition apparatus 10a of the first example, and the description thereof is omitted. .

The housings of the first and second film thickness sensors 58 ₁ and 58 ₂ are disposed above the deposition preventing plate 57 and separated from each other along the moving direction 5. An opening is provided at a position directly below the housing of the first and second film thickness sensors 58 ₁ and 58 _{2 in} the deposition preventing plate 57, and the crystal vibration of the first and second film thickness sensors 58 ₁ and 58 ₂ is provided. One child is exposed from each opening of the deposition preventing plate 57.

When the first and second release devices 21 ₁ and 21 ₂ are arranged closer to the start point side in the movement direction 5 than the end portion on the start point side in the movement direction 5 of the film formation target 51, the first and second film thickness sensors. The quartz vibrators 58 ₁ and 58 ₂ are respectively opposed to the first and second discharge holes 22 ₁ and 22 ₂ .

In the vacuum deposition apparatus 10b of the second example, unlike the vacuum deposition apparatus 10a of the first example, the first and second backflow prevention holes 26 ₁ and 26 ₂ and the first and second measurement nozzles 27 ₁ and 27 are used. ₂ is unnecessary and can be omitted.
The vacuum vapor deposition apparatus 10b of the second example can be used in place of the vacuum vapor deposition apparatus 10a of the first example in the organic EL element manufacturing apparatus 60 described above.

The method for producing an organic EL element using the vacuum vapor deposition apparatus 10b of the second example is different from the method for producing an organic EL element using the vacuum vapor deposition apparatus 10a of the first example. This is the same except for the process of controlling the heating temperature of the thin film material in the film forming process, and a description thereof will be omitted.
The steps for controlling the heating temperature of the thin film material in the hole injection layer film forming step to the electron transport layer film forming step are the same as each other, and will be described as a representative of the hole injection layer film forming step.

(Hole injection layer deposition process)
The first and second discharge devices 21 ₁ and 21 ₂ and the evaporation sources 31 to 36 are moved together in the same direction along the moving direction 5 at the same speed by the moving device 15. The discharge devices 21 ₁ and 21 ₂ are moved to the start point side in the movement direction 5 from the end on the start point side in the movement direction 5 of the film formation target 51 and are stopped. At this time, the first and second discharge holes 22 ₁ and 22 ₂ face the crystal resonators of the first and second film thickness sensors 58 ₁ and 58 ₂ , respectively.

The valve 41 is opened. The vapor of the thin film material of the hole injection layer generated by the evaporation source 31 is supplied to the first discharge device 21 ₁ through the first pipe 25 ₁ and discharged from the first discharge hole 22 ₁ . The first vapor released from the discharge hole 22 ₁ of shielded by preventing plate 57 and does not reach the film-forming target 51.

A part of the vapor discharged from the first discharge hole 22 ₁ reaches and adheres to the crystal resonator of the first film thickness sensor 58 ₁ exposed from the opening of the deposition preventing plate 57.
The first thickness sensor 58 ₁ of the control device measures the film thickness of the deposited film attached to the crystal oscillator, to control the heating temperature of the thin film material in the evaporation source code 31, based on the measurement results.

The moving device 15 brings the first and second discharge devices 21 ₁ and 21 ₂ and the evaporation sources 31 to 36 together in one direction along the moving direction 5 (in this case, the direction from the start point side to the end point side). At the same speed, the first and second discharge devices 21 ₁ and 21 ₂ are passed under the film formation target 51, and the end point of the film formation target 51 is closer to the end point in the moving direction 5. Move to the side. Next, the first and second discharge devices 21 ₁ and 21 ₂ and the evaporation sources 31 to 36 are moved together along the moving direction 5 in the direction opposite to the one direction (here, the direction from the end point side to the start point side). ) At the same speed, the first and second discharge devices 21 ₁ and 21 ₂ are again passed under the film formation target 51, and from the end of the film formation target 51 on the starting point side in the moving direction 5. Is also moved to the starting point side in the moving direction 5 and stopped.

While the first and second discharge devices 21 ₁ and 21 ₂ pass below the film formation target 51, the vapor released from the first and second discharge holes 22 ₁ and 22 ₂ is the film formation target. The hole injection layer is formed on the surface of the anode electrode of the film formation target 51 by reaching and adhering to the surface of 51.
After forming the hole injection layer, the valve 41 is closed to stop the supply of steam to the _first and second discharge devices 21 ₁ and 21 ₂ .

Unlike the organic EL element manufacturing method using the vacuum evaporation apparatus 10a of the first example, the organic EL element manufacturing method using the vacuum evaporation apparatus 10b of the second example is different from the first and second measurement nozzles 27. Since it is not necessary to release steam from ₁ , 27 ₂ , the thin film material can be saved.

<Structure of the vacuum deposition apparatus of the third example>
The structure of the vacuum deposition apparatus of the third example of the present invention will be described.
FIG. 5 is a plan view of the vacuum deposition apparatus 10c of the third example, and FIG. 6 is an internal side view thereof. In the vacuum deposition apparatus 10c of the third example, parts having the same structure as the vacuum deposition apparatus 10a of the first example are denoted by the same reference numerals and description thereof is omitted.

  The vacuum evaporation apparatus 10c of the third example has a main emission apparatus 21a and a sub emission apparatus 21b instead of the emission apparatus 21 of the vacuum evaporation apparatus 10a of the first example, and the vacuum evaporation apparatus 10a of the first example. Instead of the moving device 15, the main moving device 15a and the sub moving device 15b are provided.

  The structure of the main discharge device 21a and the sub discharge device 21b is the same as that of the discharge device 21 of the vacuum vapor deposition device 10a of the first example, and the description is omitted. The discharge holes of the main discharge device 21a and the sub discharge device 21b are called a main discharge hole and a sub discharge hole, respectively, and are denoted by reference numerals 22a and 22b, respectively. The main discharge device 21a and the sub discharge device 21b are disposed at the same height in the vacuum chamber 11 with their longitudinal directions oriented parallel to each other.

  In this embodiment, a direction parallel to the horizontal plane and perpendicular to the longitudinal direction of the main discharge device 21a and the sub discharge device 21b is referred to as a moving direction. Reference numeral 5 indicates a moving direction. In the present embodiment, the main discharge device 21a is disposed closer to the start point in the moving direction 5 than the sub discharge device 21b.

The vacuum deposition apparatus 10c of the third example has first and second main pipes 25a ₁ and 25a ₂ and first and second sub pipes 25b ₁ and 25b ₂ . The first and second main pipes 25a ₁ and 25a ₂ are linearly formed and are airtightly inserted into the wall surface of the vacuum chamber 11 using the main bellows 14a in a state of being directed parallel to the moving direction 5. One ends of the first and second main pipes 25a ₁ and 25a ₂ are connected to one end of the main discharge device 21a, respectively. The first and second auxiliary pipes 25b ₁ and 25b ₂ are linearly formed and are airtightly inserted into the wall surface of the vacuum chamber 11 using the auxiliary bellows 14b while being oriented parallel to the moving direction 5. One end of each of the first and second sub pipes 25b ₁ and 25b ₂ is connected to one end of the sub discharge device 21b.

Here, the evaporation sources 31, 33 h and 35 h are connected to the first main pipe 25 a ₁ via valves 41, 43 h and 45 h which can be opened and closed, and the evaporation sources 33 d and 35 d can be opened and closed. It is connected to the second main pipe 25a ₂ via valves 43d and 45d. Further, the evaporation source code 32,34h is connected to the first sub pipe 25b ₁ through a valve openable code 42,44H, evaporation source code 34d, 36 is openable code 44d, 46 The second sub-pipe 25b ₂ is connected through the valve.

First and second main backflow prevention holes (not shown) are provided at the connection portions of the first and second main pipes 25a ₁ and 25a _{2 with} the main discharge device 21a, and the first and second main pipes are provided. 25a _1, that one of the steam supplied from the main pipe to the main discharge apparatus 21a of 25a ₂ to contaminate flow back into the other in the main pipe is prevented. In addition, first and second sub-backflow prevention holes (not shown) are provided at the connection portions of the first and second sub-pipings 25b ₁ and 25b _{2 with} the sub-release device 21b. by-pipe 25b _1, one of the steam supplied from the sub-pipe to secondary discharge apparatus 21b of 25b ₂ to contaminate flow back into the other in the sub-pipe is prevented.

In this embodiment, the main moving device 15a is a motor, is connected to an evaporation source of reference numerals 31, 33h, 33d, 35h, and 35d, transmits power to the evaporation source of reference numerals 31, 33h, 33d, 35h, and 35d, The evaporation sources 31, 33 h, 33 d, 35 h, and 35 d are moved in the same direction along the moving direction 5 at the same speed together with the first and second main pipes 25 a ₁ and 25 a ₂ and the main discharge device 21 a. It is configured as follows. The sub moving device 15b is a motor and is connected to evaporation sources indicated by reference numerals 32, 34h, 34d and 36, and transmits power to the evaporation sources indicated by reference signs 32, 34h, 34d and 36, and indicated by reference signs 32, 34h and 34d. , 36 are configured to move together with the first and second sub pipes 25b ₁ and 25b ₂ and the sub discharge device 21b at the same speed along the moving direction 5 in the same direction.

  While moving the main discharge device 21a along the moving direction 5 in a state where the plate-shaped film formation target 51 is horizontally disposed at a position where the main discharge hole 22a and the sub discharge hole 22b can face each other in the vacuum chamber 11. When the vapor is released from the main discharge hole 22 a, the vapor reaches the surface of the film formation target 51, and a thin film is formed on the surface of the film formation target 51. Further, when the vapor is discharged from the sub discharge hole 22b while moving the sub discharge device 21b along the moving direction 5, the vapor reaches the surface of the film formation target 51 and reaches the surface of the film formation target 51. A thin film is formed.

The vacuum vapor deposition apparatus 10c of the third example has first and second main film thickness sensors 18a ₁ and 182 instead of the first and second film thickness sensors 18 ₁ and 18 ₂ of the vacuum vapor deposition apparatus 10a of the first example. 18a ₂ and first and second sub-thickness sensors 18b ₁ and 18b ₂ .

In the present embodiment, first and second main measurement nozzles 27a ₁ and 27a ₂ are provided at portions facing upward of the first and second main pipes 25a ₁ and 25a ₂ , and the first and second main pipes 25a ₁ and 25a ₂ are provided. First and second sub-measuring nozzles 27b ₁ and 27b ₂ are provided in portions facing upward of the sub-pipes 25b ₁ and 25b ₂ .

The deposition preventing plate 17 is disposed horizontally above the first and second main pipes 25a ₁ and 25a ₂ and the first and second sub pipes 25b ₁ and 25b ₂ , and the first and second main measurement nozzles. 27a ₁ , 27a ₂ and the first and second sub-measurement nozzles 27b ₁ , 27b ₂ face the deposition preventing plate 17 respectively. Even if the first and second main pipes 25a ₁ and 25a ₂ are moved by the main moving device 15a, the facing of the first and second main measuring nozzles 27a ₁ and 27a ₂ and the deposition preventing plate 17 is maintained. The vapors emitted from the first and second main measurement nozzles 27a ₁ and 27a ₂ are shielded by the deposition preventing plate 17 so as not to adhere to the wall surface of the vacuum chamber 11 and the film formation target 51. Further, even if the first and second sub pipes 25b ₁ and 25b ₂ are moved by the sub moving device 15b, the first and second sub measurement nozzles 27b ₁ and 27b ₂ and the adhesion preventing plate 17 face each other. The vapor that is maintained and discharged from the first and second sub-measurement nozzles 27b ₁ and 27b ₂ is shielded by the deposition preventing plate 17, and does not adhere to the wall surface of the vacuum chamber 11 or the film formation target 51. Yes.

The structures of the first and second main film thickness sensors 18a ₁ and 18a ₂ and the first and second sub film thickness sensors 18b ₁ and 18b ₂ are the _first and _second structures of the vacuum deposition apparatus 10a of the first example. This is the same as the film thickness sensors 18 ₁ and 18 ₂ , and the description is omitted.

In this embodiment, when the main discharge device 21a is arranged on the start point side in the movement direction 5 relative to the end portion on the start point side in the movement direction 5 of the film formation target 51 arranged in the vacuum chamber 11, the deposition preventing plate 17, openings are provided at positions facing the first and second main measurement nozzles 27 a ₁ and 27 a ₂ . First and second main thickness housing the sensors 18a _1, 18a ₂ is located directly above the opening, the first and second main thickness crystal oscillator of the sensor 18a _1, 18a _2, from the opening It is exposed one by one so that it can face the first and second main measurement nozzles 27a ₁ and 27a ₂ respectively.

Further, when the sub-release device 21b is disposed closer to the end point in the moving direction 5 than the end portion in the moving direction 5 of the film forming target 51 disposed in the vacuum chamber 11, Openings are provided at positions facing the first and second sub-measurement nozzles 27b ₁ and 27b ₂ . The housings of the first and second sub-film thickness sensors 18b ₁ and 18b ₂ are disposed immediately above the openings, and the crystal resonators of the first and second sub-film thickness sensors 18b ₁ and 18b ₂ are disposed from the openings. One by one is exposed so that the first and second sub-measurement nozzles 27b ₁ and 27b ₂ can face each other.

The vacuum deposition apparatus 10c of the third example can be used instead of the vacuum deposition apparatus 10a of the first example in the organic EL element manufacturing apparatus 60 described above.
Compared with the manufacturing method of the organic EL element using the vacuum evaporation apparatus 10a of the first example, the manufacturing method of the organic EL element using the vacuum evaporation apparatus 10c of the third example, The electrode film formation process to the substrate carry-out process are the same, and the description of each process of the substrate carry-in process to the substrate pretreatment process and the electrode film formation process to the substrate carry-out process is omitted.
The film formation preparation step to the electron transport layer film formation step of the organic EL element manufacturing method using the vacuum evaporation apparatus 10c of the third example will be described.

(Film formation preparation process)
After finishing the substrate pretreatment process, referring to FIG. 3, the film forming object 51 is moved from the substrate pretreatment chamber 62 into the vacuum chamber 11 of the vacuum deposition apparatus 10 c of the third example by the transfer device 68. .

  Referring to FIGS. 5 and 6, the hole injection layer thin film material is arranged at the evaporation source 31, the hole transport layer thin film material is arranged at the evaporation source 32, and red light is emitted from the evaporation sources 33 h and 33 d. The host of the layer and the thin film material of the dopant are respectively disposed, the host of the green light emitting layer is disposed in the evaporation source of reference numerals 34h and 34d, and the thin film of the dopant is disposed in the evaporation source of reference numerals 35h and 35d, respectively. A thin film material of the dopant is disposed, and a thin film material of the electron transport layer is disposed in the evaporation source 36.

That is, the thin film materials to be sequentially stacked are alternately distributed and arranged on the evaporation source connected to the main emission device 21a and the evaporation source connected to the sub emission device 21b.
Each valve 41 to 46 is closed. The thin film material is heated by each of the evaporation sources 31 to 36 to generate steam.

(Hole injection layer deposition process)
The main moving device 15a moves the main discharge device 21a and the evaporation sources 31, 33h, 33d, 35h, and 35d together in the same direction along the moving direction 5 at the same speed, The main discharge device 21a is moved to the start point side from the end portion on the start point side in the moving direction 5 and is stopped. At this time, the first and second main measurement nozzles 27a ₁ and 27a ₂ face the crystal resonators of the first and second main film thickness sensors 18a ₁ and 18a ₂ , respectively.

In addition, the sub-moving device 15b moves the sub-emission device 21b and the evaporation sources of reference numerals 32, 34h, 34d, and 36 together in the same direction along the moving direction 5 at the same speed, thereby The auxiliary discharge device 21b is moved to the end point side from the end portion on the end point side in the moving direction 5 and is stopped. At this time, the first and second sub measurement nozzles 27b ₁ and 27b ₂ face the crystal resonators of the first and second sub film thickness sensors 18b ₁ and 18b ₂ , respectively.

The valve 41 is opened. The vapor | steam of the thin film material of the hole injection layer produced | generated with the evaporation source of the code | symbol 31 is supplied to the main discharge | release apparatus 21a through the _1st main piping 25a1, and is discharge | released from the main discharge hole 22a. The main discharge device 21 a is disposed on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, and the vapor released from the main discharge hole 22 a is directed to the film formation target 51. Will not reach.

The vapor emitted from the first main measurement nozzle 27a ₁ reaches and adheres to the crystal resonator of the first main film thickness sensor 18a ₁ exposed from the opening of the deposition preventing plate 17.
The control device of the first main film thickness sensor 18a ₁ measures the film thickness of the adhered film attached to the crystal resonator, and controls the heating temperature of the thin film material at the evaporation source 31 based on the measurement result.

  The main moving device 15a causes the main discharge device 21a and the evaporation sources 31, 33h, 33d, 35h, and 35d to be in one direction along the moving direction 5 (here, the direction from the starting point side to the ending point side). The main discharge device 21a is moved below the film formation target 51 and moved to the end point side from the end of the film formation target 51 in the moving direction 5 on the end side. Next, the main discharge device 21a and the evaporation sources 31, 33h, 33d, 35h, and 35d are moved together along the moving direction 5 in the direction opposite to the one direction (here, the direction from the end point side to the start point side). It is moved at a speed, the main discharge device 21a is again passed under the film formation target 51, moved from the end of the film formation target 51 in the movement direction 5 to the start point side in the movement direction 5, and stopped. Let

  While the main discharge device 21a passes below the film formation target 51, the vapor released from the main discharge hole 22a reaches the surface of the film formation target 51 and adheres to it, and the anode electrode of the film formation target 51 A hole injection layer is formed on the surface.

During the formation of the hole injection layer, the valve 42 is opened. The vapor | steam of the thin film material of the hole transport layer produced | generated with the evaporation source of the code | symbol 32 is supplied to the sub discharge | release apparatus 21b through the _1st sub piping 25b1, and is discharge | released from the sub discharge hole 22b. The sub-emission device 21 b is disposed on the end side in the movement direction 5 with respect to the end portion on the end side in the movement direction 5 of the film formation target 51, and the vapor released from the sub-release hole 22 b enters the film formation target 51. Will not reach.

The vapor emitted from the first sub measurement nozzle 27b ₁ reaches and adheres to the crystal resonator of the first sub film thickness sensor 18b ₁ exposed from the opening of the deposition preventing plate 17.
The control device of the first sub-film thickness sensor 18b ₁ measures the film thickness of the adhered film attached to the crystal resonator, and controls the heating temperature of the thin film material at the evaporation source 32 based on the measurement result.
After completing the formation of the hole injection layer, the valve 41 is closed to stop the supply of steam to the main discharge device 21a.

(Hole transport layer deposition process)
During the hole injection layer forming step, the heating temperature of the thin film material of the hole transport layer in the evaporation source indicated by reference numeral 32 is adjusted, and the hole is formed in a shorter time than when the vacuum deposition apparatus 10a of the first example is used. The transport layer can be formed.

By the sub moving device 15b, the sub discharging device 21b and the evaporation sources of reference numerals 32, 34h, 34d, 36 are put together in one direction along the moving direction 5 (here, the direction from the end point side to the start point side). The sub-emission device 21b is moved below the film formation target 51 and moved to the start point side from the end on the start point side in the moving direction 5 of the film formation target 51. Next, the sub-emission device 21b and the evaporation sources indicated by reference numerals 32, 34h, 34d, and 36 are moved together along the moving direction 5 in the direction opposite to the one direction (here, the direction from the start point side to the end point side). The sub-emission device 21b is again passed under the film formation target 51, moved to the end side in the movement direction 5 from the end of the film formation target 51 in the movement direction 5, and moved stationary. Let
While the sub discharge device 21b passes below the film formation target 51, the vapor released from the sub discharge hole 22b reaches and adheres to the surface of the film formation target 51, and holes are injected into the film formation target 51. A hole transport layer is formed on the surface of the layer.

While forming the hole transport layer, the casing of the first main film thickness sensor 18a ₁ is rotated to expose another crystal resonator from the opening of the deposition preventing plate 17, and the first main measurement nozzle 27a. Face _one .
The valves 43h and 43d are opened. The vapor of the red light emitting layer host and the dopant thin film material generated by the evaporation sources 33h and 33d is supplied to the main discharge device 21a through the first main pipe 25a ₁ and the second main pipe 25a ₂ , respectively. Are discharged from the main discharge hole 22a. The main discharge device 21 a is disposed on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, and the vapor released from the main discharge hole 22 a is directed to the film formation target 51. Will not reach.

The vapors emitted from the first and second main measuring nozzles 27a ₁ and 27a _{2 are applied} to the crystal resonators of the first and second main film thickness sensors 18a ₁ and 18a ₂ exposed from the openings of the deposition preventing plate 17. Each arrives and adheres.

The control devices of the first and second main film thickness sensors 18a ₁ and 18a ₂ measure the film thickness of the adhered film adhering to the crystal resonator, and based on the measurement results, the thin film material at the evaporation sources indicated by reference numerals 33h and 33d The heating temperature of each is controlled.
After the formation of the hole transport layer is completed, the valve 42 is closed to stop the supply of steam to the sub-discharge device 21b.

  Hereinafter, the red light emitting layer film forming step to the electron transport layer film forming step are the first vacuum deposition except the step of adjusting the heating temperature of the thin film material used for the next film forming step during the one film forming step. This is the same as the red light emitting layer forming step to the electron transporting layer forming step of the method for manufacturing the organic EL element using the apparatus, and the description thereof is omitted.

  In the manufacturing method of the organic EL element using the vacuum deposition apparatus 10c of the third example, the heating temperature of the thin film material used for the next film forming step can be adjusted during one film forming step. Compared with the manufacturing method of the organic EL element using the apparatus 10a, the next film-forming process can be started in a short time, and the multilayer film can be formed in a short time.

<Structure of the vacuum deposition apparatus of the fourth example>
The structure of the vacuum deposition apparatus of the fourth example of the present invention will be described.
FIG. 7 is a plan view of a fourth example of the vacuum evaporation apparatus 10d, and FIG. 8 is an internal side view thereof. In the fourth example of the vacuum vapor deposition apparatus 10d, the same reference numerals are given to portions having the same structure as the vacuum vapor deposition apparatus 10a of the first example, and the description thereof is omitted.

  The vacuum deposition apparatus 10d of the fourth example has a main ejection device 21a and a sub-emission device 21b instead of the ejection device 21 of the vacuum deposition apparatus 10a of the first example, and the vacuum deposition apparatus 10a of the first example. Instead of the moving device 15, the main moving device 15a and the sub moving device 15b are provided.

  The structure of the main discharge device 21a and the sub discharge device 21b is the same as that of the discharge device 21 of the vacuum vapor deposition device 10a of the first example, and the description is omitted. The discharge holes of the main discharge device 21a and the sub discharge device 21b are called a main discharge hole and a sub discharge hole, respectively, and are denoted by reference numerals 22a and 22b, respectively. The main discharge device 21a and the sub discharge device 21b are disposed at the same height in the vacuum chamber 11 with their longitudinal directions oriented parallel to each other.

  In this embodiment, a direction parallel to the horizontal plane and perpendicular to the longitudinal direction of the main discharge device 21a and the sub discharge device 21b is referred to as a moving direction. Reference numeral 5 indicates a moving direction. In the present embodiment, the main discharge device 21a is disposed closer to the start point in the moving direction 5 than the sub discharge device 21b.

  In the present embodiment, the vacuum vapor deposition apparatus 10d of the fourth example has a main pipe 25a and a sub pipe 25b. The main pipe 25a is linearly formed and is airtightly inserted into the wall surface of the vacuum chamber 11 using the main bellows 14a in a state of being parallel to the moving direction 5, and one end of the main pipe 25a is connected to the main discharge device 21a. It is connected to one end. Further, the sub pipe 25b is formed in a straight line and is air-tightly inserted into the wall surface of the vacuum chamber 11 using the sub bellows 14b in a state of being directed parallel to the moving direction 5, and one end of the sub pipe 25b is sub discharge. It is connected to one end of the device 21b.

  Here, the evaporation sources denoted by reference numerals 31, 33h, 34h, 35h, and 36 are connected to the main pipe 25a through the valves 41, 43h, 44h, 45h, and 46 that can be opened and closed, and denoted by reference numerals 32, 33d, 34d, and 35d. The evaporation source is connected to the auxiliary pipe 25b via valves 42, 43d, 44d, and 45d that can be opened and closed.

  In the present embodiment, the main moving device 15a is a motor, is connected to the evaporation sources 31, 33 h, 34 h, 35 h, 36, and transmits the power to the evaporation sources 31, 33 h, 34 h, 35 h, 36, The evaporation sources denoted by reference numerals 31, 33h, 34h, 35h, and 36 are configured to move together with the main pipe 25a and the main discharge device 21a in the same direction along the moving direction 5 at the same speed. The sub moving device 15b is a motor and is connected to the evaporation sources indicated by reference numerals 32, 33d, 34d, and 35d, and transmits power to the evaporation sources indicated by reference signs 32, 33d, 34d, and 35d, and indicated by reference numerals 32, 33d, and 34d. , 35d is configured to move along the moving direction 5 at the same speed along the moving direction 5 together with the sub pipe 25b and the sub discharge device 21b.

  While moving the main discharge device 21a along the moving direction 5 in a state where the plate-shaped film formation target 51 is horizontally disposed at a position where the main discharge hole 22a and the sub discharge hole 22b can face each other in the vacuum chamber 11. When the vapor is released from the main discharge hole 22 a, the vapor reaches the film formation target 51, and a thin film is formed on the surface of the film formation target 51. Further, when the vapor is released from the secondary discharge hole 22 b while moving the secondary discharge device 21 b along the moving direction 5, the vapor reaches the film formation target 51, and a thin film is formed on the surface of the film formation target 51. It is supposed to be formed.

The vacuum deposition apparatus 10d of the fourth example has first and second deposition prevention plates 57 ₁ and 57 ₂ instead of the deposition prevention plate 17 of the vacuum deposition apparatus 10a of the first example. Instead of the film thickness sensor 18 of the vacuum deposition apparatus 10a, first and second main film thickness sensors 58a ₁ and 58a ₂ and first and second sub film thickness sensors 58b ₁ and 58b ₂ are provided.

The first and second deposition preventing plates 57 ₁ and 57 ₂ are formed in a strip shape by a material that shields vapor, and the longitudinal direction thereof is parallel to the longitudinal directions of the main discharge device 21a and the secondary discharge device 21b. here the starting point side of the first deposition preventing plate 57 ₁ is moved the direction 5 from the end portion of the starting side in the moving direction 5 of the vacuum chamber 11 arranged film-forming target within 51, and the secondary main emission hole 22a is disposed horizontally above the discharge holes 22b, the second end point of the deposition preventing plate 57 ₂ movement direction 5 than the end of the end point of the movement direction 5 of the vacuum chamber 11 arranged film-forming target within 51 On the side, it is horizontally disposed above the main discharge hole 22a and the sub discharge hole 22b.

When the main discharge device 21a and the sub discharge device 21b are arranged closer to the start point in the movement direction 5 than the end of the film formation target 51 in the movement direction 5, the main discharge hole 22a and the sub discharge hole 22b are is facing the deposition preventing plate 57 ₁ one, vapor emitted from the main emission holes 22a and the auxiliary discharge hole 22b is shielded by the first deposition preventing plate 57 _1, a wall surface or the film-forming target 51 of the vacuum chamber 11 It is designed not to adhere. Further, when the main discharge device 21a and the sub discharge device 21b are arranged on the end point side in the movement direction 5 with respect to the end portion on the end point side in the movement direction 5 of the film formation target 51, the main discharge hole 22a and the sub discharge hole 22b. is facing the second deposition preventing plate 57 _2, the main discharge hole 22a and the steam released from the secondary discharge hole 22b is shielded by the second deposition preventing plate 57 _2, walls and the film-forming target of the vacuum chamber 11 51 does not adhere.

The structures of the first and second main film thickness sensors 58a ₁ and 58a ₂ and the first and second sub film thickness sensors 58b ₁ and 58b ₂ are the _first and _second structures of the vacuum deposition apparatus 10a of the first example. This is the same as the film thickness sensors 18 ₁ and 18 ₂ , and the description is omitted.

The casings of the first main film thickness sensor 58a ₁ and the first sub film thickness sensor 58b ₁ are arranged above the first deposition preventing plate 57 ₁ and separated from each other along the moving direction 5. . An opening is provided immediately below the housing of the first main film thickness sensor 58a ₁ and the first sub film thickness sensor 58b _{1 in} the first deposition preventing plate 57 ₁ , and the first main film thickness sensor 58a. ₁ and the first crystal unit FukumakuAtsu sensor 58b ₁ are one by one exposed respectively from the first deposition preventing plate 57 ₁ of the opening.

When the main discharge device 21a and the sub discharge device 21b are arranged on the start point side in the movement direction 5 with respect to the end portion on the start point side in the movement direction 5 of the film formation target 51, the main discharge hole 22a is formed in the first main film thickness sensor 58a. face the _first crystal oscillator, secondary discharge hole 22b is arranged to face the first FukumakuAtsu sensor 58b ₁ of the quartz oscillator.

When the main discharge device 21a and the sub discharge device 21b are arranged closer to the end point in the moving direction 5 than the end portion in the moving direction 5 of the film formation target 51, the main discharge hole 22a has the second main film thickness. The sensor 58a ₂ faces the crystal resonator, and the sub discharge hole 22b faces the second sub film thickness sensor 58b ₂ .

The vacuum deposition apparatus 10d of the fourth example can be used in place of the vacuum deposition apparatus 10a of the first example in the organic EL element manufacturing apparatus 60 described above.
Compared with the manufacturing method of the organic EL element using the vacuum evaporation apparatus 10a of the first example, the manufacturing method of the organic EL element using the vacuum evaporation apparatus 10d of the fourth example, The electrode film formation process to the substrate carry-out process are the same, and the description of each process of the substrate carry-in process to the substrate pretreatment process and the electrode film formation process to the substrate carry-out process is omitted.
The film formation preparation step to the electron transport layer film formation step of the organic EL element manufacturing method using the vacuum deposition apparatus 10d of the fourth example will be described.

(Film formation preparation process)
After finishing the substrate pretreatment process, referring to FIG. 3, the film forming object 51 is moved from the substrate pretreatment chamber 62 into the vacuum chamber 11 of the vacuum deposition apparatus 10 d of the fourth example by the transfer device 68. .

  7 and 8, the hole injection layer thin film material is disposed in the evaporation source 31, the hole transport layer thin film material is disposed in the evaporation source 32, and red light is emitted from the evaporation sources 33 h and 33 d. The host of the layer and the thin film material of the dopant are respectively disposed, the host of the green light emitting layer is disposed in the evaporation source of reference numerals 34h and 34d, and the thin film of the dopant is disposed in the evaporation source of reference numerals 35h and 35d, respectively. A thin film material of the dopant is disposed, and a thin film material of the electron transport layer is disposed in the evaporation source 36.

That is, the host thin film material is disposed in an evaporation source connected to the main emission device 21a, and the dopant thin film material is disposed in an evaporation source connected to the sub emission device 21b. Further, when the thin film materials to be sequentially stacked are one material (for example, in the case of a hole injection layer and a hole transport layer), the evaporation source connected to the main emission device 21a and the evaporation connected to the sub emission device 21b. The sources are arranged alternately.
Each valve 41 to 46 is closed.

In this embodiment, the sub-moving device 15b moves the sub-emitting device 21b and the evaporation sources of reference numerals 32, 33d, 34d, and 35d together along the moving direction 5 to move the sub-emitting device 21b to the film formation target. 51 is moved from the end on the end point side in the moving direction 5 to the end point side, and is stopped. Next, the main discharge device 21a and the evaporation sources of reference numerals 31, 33h, 34h, 35h, and 36 are moved together along the moving direction 5 by the main transfer device 15a, and the main discharge device 21a is moved to the film formation target 51. The moving direction 5 is moved from the end on the end side toward the end point, and is stopped.
The thin film material is heated by each of the evaporation sources 31 to 36 to generate steam.

(Hole injection layer deposition process)
The valve 41 is opened. The vapor of the thin film material of the hole injection layer generated by the evaporation source 31 is supplied to the main discharge device 21a through the main pipe 25a and discharged from the main discharge hole 22a.

The vapor discharged from the main discharge hole 22 a is shielded by the _second deposition plate 572 and does not reach the film formation target 51. Some of the released vapor is deposited reaches the second main film thickness sensor 58a ₂ of the crystal oscillator which is exposed from the second deposition preventing plate 57 ₂ of the opening.
The control device of the second main film thickness sensor 58a ₂ measures the film thickness of the adhered film adhering to the crystal resonator, and controls the heating temperature of the thin film material at the evaporation source 31 based on the measurement result.

  The main moving device 15a causes the main discharging device 21a and the evaporation sources 31, 33h, 34h, 35h, and 36 to move together in the same direction along the moving direction 5 (here, the direction from the end point side to the start point side). The main discharge device 21a is passed under the film formation target 51, moved to the start point side from the end on the start point side in the moving direction 5 of the film formation target 51, and is stopped.

  While the main discharge device 21a passes below the film formation target 51, the vapor released from the main discharge hole 22a reaches the surface of the film formation target 51 and adheres to it, and the anode electrode of the film formation target 51 A hole injection layer is formed on the surface.

  During the formation of the hole injection layer, the valve 42 is opened. The vapor | steam of the thin film material of the hole transport layer produced | generated by the evaporation source of the code | symbol 32 is supplied to the sub discharge | release apparatus 21b through the sub piping 25b, and is discharge | released from the sub discharge hole 22b.

Vapor discharged from the sub discharge hole 22 b is shielded by the _second deposition preventing plate 572 and does not reach the film formation target 51. Some of the released vapor is deposited reaches the second single crystal oscillator FukumakuAtsu sensor 58b ₂ that is exposed from the second deposition preventing plate 57 ₂ of the opening.

Second control device FukumakuAtsu sensor 58b ₂ measures the thickness of the deposited film attached to the crystal oscillator, to control the heating temperature of the thin film material in the evaporation source code 32, based on the measurement results.
After completing the formation of the hole injection layer, the valve 41 is closed to stop the supply of steam to the main discharge device 21a.

(Hole transport layer deposition process)
During the hole injection layer deposition process, the heating temperature of the thin film material of the hole transport layer is adjusted, and the hole transport layer can be deposited in a shorter time than when the vacuum vapor deposition apparatus 10a of the first example is used. You can start.

  The sub-moving device 15b moves the sub-emitting device 21b and the evaporation sources 32, 33d, 34d, and 35d together at the same speed along the moving direction 5 in the same direction (here, the direction from the end point side to the start point side). Then, the sub-emission device 21b is passed under the film formation target 51, moved to the start point side from the end on the start point side in the moving direction 5 of the film formation target 51, and is stopped.

While the sub discharge device 21b passes below the film formation target 51, the vapor released from the sub discharge hole 22b reaches and adheres to the surface of the film formation target 51, and holes are injected into the film formation target 51. A hole transport layer is formed on the surface of the layer.
After the formation of the hole transport layer is completed, the valve 42 is closed to stop the supply of steam to the sub-discharge device 21b.

(Red light emitting layer deposition process)
With reference to FIG. 3, the mask plate 52 is taken out from the mask chamber 65 by the transfer device 68 and is carried into the vacuum chamber 11 of the vacuum vapor deposition device 10 d of the fourth example.

  Referring to FIGS. 7 and 8, the alignment device 55 aligns the red light-emitting layer on the surface of the film formation target 51 so that it overlaps the opening of the mask plate 52, and maintains the relative positional relationship. The film formation target 51 and the mask plate 52 are bonded together while keeping them.

  The valves 43h and 43d are opened. The vapor of the red light emitting layer host and the dopant thin film material generated by the evaporation sources 33h and 33d is supplied to the main discharge device 21a and the sub discharge device 21b through the main pipe 25a and the sub pipe 25b, respectively. It is discharged from the discharge hole 22a and the sub discharge hole 22b, respectively.

The vapor discharged from the main discharge hole 22 a and the sub discharge hole 22 b is shielded by the _first deposition preventing plate 571 and does not reach the film formation target 51.
The main emission holes 22a and some of the steam released from the secondary discharge hole 22b first main thickness sensor 58a ₁ first FukumakuAtsu sensor 58b exposed from the first deposition preventing plate 57 ₁ of the opening ₁ Each of the quartz resonators reaches and adheres.

The control devices of the first main film thickness sensor 58a ₁ and the first sub film thickness sensor 58b ₁ measure the film thicknesses of the adhered films adhering to the crystal resonator, respectively, and evaporations 33h and 33d based on the measurement results. The heating temperature of the thin film material at the source is controlled respectively.

  With the main moving device 15a and the sub moving device 15b, the main discharge device 21a, the sub discharge device 21b, and the evaporation sources 31 to 36 are moved together in the same direction along the moving direction 5 (here, the direction from the start point side to the end point side). ) At the same speed, the main discharge device 21a and the sub discharge device 21b are passed together below the film formation target 51, and the end of the film formation target 51 in the moving direction 5 on the end side. Move to and stop.

While the main discharge device 21a and the sub discharge device 21b pass below the film formation target 51, the vapors of the host and dopant thin film materials respectively released from the main discharge hole 22a and the sub discharge hole 22b are the film formation target. The red light emitting layer is formed in the red light emitting layer film forming area of the red light emitting layer, which reaches and adheres to the red light emitting layer film forming area exposed from the opening of the mask plate 52 in the surface 51.
After the red light emitting layer is formed, the valves 43h and 43d are closed to stop the supply of steam to the main discharge device 21a and the sub discharge device 21b.

(Green light emitting layer deposition process)
The film forming object 51 and the mask plate 52 are separated by the alignment device 55. Next, the green light emitting layer deposition region on the surface of the deposition target 51 is aligned so as to overlap the opening of the mask plate 52, and the deposition target 51 and the mask plate 52 are maintained while maintaining the positional relationship. to paste together.

The second of the main film thickness sensor 58a ₂ rotates the second FukumakuAtsu housing of the sensor 58b _2, exposing each separate crystal oscillator from the second deposition preventing plate 57 ₂ of the opening.
The valves 44h and 44d are opened, and the vapor of the green light emitting layer host and dopant thin film material generated by the evaporation sources 34h and 34d passes through the main pipe 25a and the sub pipe 25b, respectively. 21a and the sub discharge device 21b are respectively discharged from the main discharge hole 22a and the sub discharge hole 22b.

  Next, in the same manner as in the red light emitting layer film forming step, after adjusting the heating temperature of the thin film material at the evaporation sources denoted by reference numerals 34h and 34d, the main emission device 21a and the sub emission device 21b emit red light along the moving direction 5. It is moved at the same speed in the opposite direction (in this case, the direction from the end point side to the start point side), and passes through the main discharge device 21a and the sub discharge device 21b together under the film formation target 51. Then, the film formation target 51 is moved to the start point side from the end portion on the start point side in the moving direction 5 and is made stationary.

While the main discharge device 21a and the sub discharge device 21b pass below the film formation target 51, the vapors of the host and dopant thin film materials respectively released from the main discharge hole 22a and the sub discharge hole 22b are the film formation target. The green light emitting layer is formed in the green light emitting layer deposition region by reaching and adhering to the green light emitting layer deposition region exposed from the opening of the mask plate 52 in the surface of 51.
After the green light emitting layer is formed, the valves 44h and 44d are closed to stop the supply of steam to the main discharge device 21a and the sub discharge device 21b.

(Blue light emitting layer deposition process)
The film forming object 51 and the mask plate 52 are separated by the alignment device 55. Next, the film formation region of the blue light emitting layer on the surface of the film formation target 51 is aligned so as to overlap the opening of the mask plate 52, and the film formation target 51 and the mask plate 52 are maintained while maintaining the positional relationship. to paste together.

By rotating the first main film thickness sensor 58a ₁ and the first housing of FukumakuAtsu sensor 58b _1, exposing each separate crystal oscillator from the first deposition preventing plate 57 ₁ of the opening.
The valves 45h and 45d are opened, and the main emission device passes through the main pipe 25a and the sub-pipe 25b through the vapor of the blue light emitting layer host and dopant thin film material generated by the evaporation source 35h and 35d, respectively. 21a and the sub discharge device 21b are respectively discharged from the main discharge hole 22a and the sub discharge hole 22b.

Next, the blue light emitting layer is formed in the film formation region of the blue light emitting layer in the same manner as the red light emitting layer forming step.
After the blue light emitting layer is formed, the valves 45h and 45d are closed to stop the supply of steam to the main discharge device 21a and the sub discharge device 21b. The film forming object 51 and the mask plate 52 are separated by the alignment device 55.
Referring to FIG. 3, the mask plate 52 is taken out from the vacuum chamber 11 of the vacuum deposition apparatus 10 d of the fourth example by the transfer device 68 and stored in the mask chamber 65.

(Electron transport layer deposition process)
Referring to FIGS. 7 and 8, the second major film thickness sensor 58a ₂ of the housing is rotated to expose a different crystal resonator from the second deposition preventing plate 57 ₂ of the opening.

  The valve 46 is opened, and the vapor of the thin film material of the electron transport layer generated by the evaporation source 36 is supplied to the main emission device 21a through the main pipe 25a and discharged from the main emission hole 22a. .

Next, an electron transport layer is formed on the surface of the red, green, and blue light-emitting layers of the film formation target 51 in the same manner as the hole transport layer deposition step.
After forming the electron transport layer, the valve 46 is closed to stop the supply of vapor to the main emission device 21a.

  In the first to fourth vacuum deposition apparatuses 10a to 10d described above, the vacuum deposition apparatus 10a of the first example will be described as a representative. With reference to FIGS. However, the present invention is not limited to this as long as the discharge hole 22 and the film formation target 51 can face each other. Instead, the discharge hole 22 may be provided on the surface facing the lower side of the discharge device 21, and the film formation target 51 may be horizontally disposed below the discharge hole 22, or the discharge hole 22 may be formed on the side surface of the discharge device 21. May be provided, and the film formation target 51 may be vertically arranged at a position facing the discharge hole 22.

  In the first to fourth vacuum deposition apparatuses 10a to 10d described above, the vacuum deposition apparatus 10a of the first example will be described as a representative. With reference to FIG. Although a plurality of side-by-side discharge holes are provided along the direction, a configuration in which the strip-shaped discharge holes are provided with the longitudinal direction thereof parallel to the longitudinal direction of the discharge device 21 is also included in the present invention.

In the vacuum deposition apparatuses 10a to 10d of the first to fourth examples described above, the vacuum deposition apparatus 10a of the first example will be described as a representative. With reference to FIGS. 1 and 2, in addition to the evaporation sources 31 to 36, The valves 41 to 46, the first and second pipes 25 ₁ and 25 _2, and the discharge device 21 are provided with heaters (not shown) so that they can be heated.

The heating temperature of the valves 41 to 46 is set to be higher than the heating temperature of the evaporation sources 31 to 36, the heating temperature of the first and second pipes 25 ₁ and 25 ₂ is set to be higher than the heating temperature of the valves 41 to 46, and the heating of the discharge device 21. When the temperature is higher than the heating temperature of the first and second pipes 25 ₁ and 25 ₂ , it is possible to prevent the vapor of the thin film material from being clogged between the evaporation sources 31 to 36 and the discharge device 21, and the evaporation source 31. Steam can be stably supplied from ~ 36 to the discharge device 21.

  In the vacuum deposition apparatuses 10a to 10d of the first to fourth examples described above, crucibles having different sizes are arranged in the evaporation sources 31 to 36, respectively, and a smaller amount of thin film material is placed in a smaller crucible. May be accommodated. In this case, even when the amount of the thin film material is small, the vapor generation rate can be easily adjusted.

In the first to fourth vacuum deposition apparatuses 10a to 10d described above, the vacuum deposition apparatus 10a of the first example will be representatively described. Referring to FIGS. However, there is a structure in which the evaporation sources 31 to 36 are arranged in the vacuum chamber 11. In this case, the bellows 14 is not required, the structure of the device Ru simply Na.

10a, 10b, 10c, 10d ... Vacuum deposition apparatus 11 ... Vacuum tank 12 ... Vacuum exhaust apparatus 21 ... Release apparatus 21a ... Main discharge apparatus 21b ... Sub-release apparatus 21 ₁ , 21 ₂ ... First, Second release device 31, 32, 33h, 33d, 34h, 34d, 35h, 35d, 36 ... evaporation source 51 ... deposition target

Claims (8)

A vacuum chamber the film-forming target is placed,
An evaporation source disposed outside the vacuum chamber, the thin film material being disposed, and generating vapor of the thin film material;
And evacuation device for evacuating the inner portion of said vacuum chamber,
Wherein said vapor from the evaporation source is supplied, a discharge device for releasing the vapor into the inner portion of the vacuum chamber,
A vapor deposition apparatus for causing the vapor released from the discharge apparatus to the inside of the vacuum chamber to reach the film formation target, and forming a thin film on the surface of the film formation target,
The discharge device is disposed inside the vacuum chamber, and the evaporation source is disposed outside the vacuum chamber, and the discharge device and the evaporation source that supplies the vapor to the discharge device are combined together. A vacuum deposition apparatus having a moving device for movement.   The vacuum deposition apparatus according to claim 1, wherein a plurality of the evaporation sources are connected to one of the discharge apparatuses. Wherein the inner portion of the vacuum chamber, wherein the discharge device is a plurality arranged,
Each of the discharge devices is supplied with the vapor from a different evaporation source disposed outside the vacuum chamber,
The vacuum evaporation apparatus according to claim 1, wherein the moving device is configured to move a plurality of the discharging devices together. Wherein the inner portion of the vacuum chamber, wherein the discharge device is two located,
The vacuum evaporation apparatus according to any one of claims 1 and 2, wherein the moving device is configured to move the two discharge devices separately. Is disposed outside the vacuum chamber, a thin film material to generate a vapor of the thin film material in the evaporation source located, by supplying the steam release device which is arranged inside the vacuum chamber, said from the release device to release the vapor into the inner portion of the vacuum chamber, before Symbol to reach the vapor deposition target object disposed on the inner portion of the vacuum chamber, forming a thin film for forming a thin film on the surface of the film-forming target Because
With the evaporation source positioned outside the vacuum chamber and the discharge device positioned inside the vacuum chamber, the evaporation source and the discharge device supplied with the vapor from the evaporation source are combined. A method of forming a thin film, wherein the thin film is formed on a surface of the film formation object while moving the film to the surface . Using the discharge device to which a plurality of the evaporation sources are connected,
By supplying steam of a thin film material in the discharge device from a said evaporation source moved to release the vapor into the inner portion of the vacuum chamber from the discharge device, the discharge device with the plurality of the evaporation sources The vapor reaches the film formation target, and after forming a thin film on the surface of the film formation target, the supply of the vapor from the one evaporation source to the discharge device is stopped,
By supplying steam of a thin film material in the discharge device from another of said evaporation source moved to release the vapor into the inner portion of the vacuum chamber from the discharge device, the discharge device with the plurality of the evaporation sources The thin film forming method according to claim 5, wherein the vapor reaches the film formation target while forming another thin film on the surface of the film formation target. Using a plurality of the discharge devices,
A plurality of said discharge device to release respectively the vapor in the inner portion of the vacuum chamber, while moving the plurality of the discharge device together, the vapor emitted from the plurality of the discharge device to the film-forming target The thin film forming method according to claim 5, wherein the thin film is formed together on the surface of the film formation target. Using two discharge devices,
To release the vapor into the inner portion of the vacuum chamber from one said emission device, while moving the one of the discharge device, to reach the steam in the film-forming target one on the surface of the film-forming target After the thin film is formed, the vapor emission from the one emission device is stopped,
From said another of said release device to release the vapor into the inner portion of the vacuum chamber, while moving the separate emission device, to reach the steam in the film-forming target, another on the surface of the film-forming target The thin film forming method according to claim 5, wherein the thin film is formed.

Images