JPH01208394A - Substrate heating mechanism for vacuum film-forming device - Google Patents
Substrate heating mechanism for vacuum film-forming deviceInfo
- Publication number
- JPH01208394A JPH01208394A JP3226388A JP3226388A JPH01208394A JP H01208394 A JPH01208394 A JP H01208394A JP 3226388 A JP3226388 A JP 3226388A JP 3226388 A JP3226388 A JP 3226388A JP H01208394 A JPH01208394 A JP H01208394A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating mechanism
- vacuum film
- heat
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000010438 heat treatment Methods 0.000 title claims abstract description 34
- 239000012530 fluid Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 14
- 238000002791 soaking Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000001307 helium Substances 0.000 abstract description 2
- 229910052734 helium Inorganic materials 0.000 abstract description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 2
- 229920002545 silicone oil Polymers 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000007789 sealing Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
真空成膜装置の基板加熱機構に関し、
基板の加熱特性の向上を目的とし、
半導体ウェハ等の基板表面に薄膜層を蒸着形成する真空
成膜装置の基板加熱機構であって、基板加熱用のヒータ
ブロックと該基板の保持台との間に、流体封入型均熱板
を相互に密着させて形成して構成する。[Detailed Description of the Invention] [Summary] Regarding the substrate heating mechanism of a vacuum film forming apparatus, this invention relates to a substrate heating mechanism of a vacuum film forming apparatus that forms a thin film layer by vapor deposition on the surface of a substrate such as a semiconductor wafer, with the aim of improving the heating characteristics of the substrate. The heating mechanism is constructed by forming fluid-filled soaking plates in close contact with each other between a heater block for heating the substrate and a holder for the substrate.
本発明は半導体ウェハの表面に薄膜のエピタキシャル層
等を形成する真空成膜装置に係り、特に基板の加熱特性
の向上を図った真空成膜装置の基板加熱機構に関する。The present invention relates to a vacuum film forming apparatus for forming a thin epitaxial layer or the like on the surface of a semiconductor wafer, and more particularly to a substrate heating mechanism of a vacuum film forming apparatus that improves the heating characteristics of the substrate.
第２図は従来の真空成膜装置の基板加熱機構を示した図
であり、（Ａ）は真空成膜装置の概念図をまた（Ｂ）は
基板加熱機構を示している。FIG. 2 is a diagram showing a substrate heating mechanism of a conventional vacuum film forming apparatus, in which (A) is a conceptual diagram of the vacuum film forming apparatus and (B) is a diagram showing the substrate heating mechanism.
以下、−例として基板に薄膜のエピタキシャル層を物理
的な方法で形成する電子ビーム蒸着（ＭＢＥ）装置につ
いて説明する。Hereinafter, as an example, an electron beam evaporation (MBE) apparatus for forming a thin epitaxial layer on a substrate by a physical method will be described.
図（Ａ） 、 （Ｂ）で、真空チャンバ１の所定位置に
は基板２およびＢｔｉ基板２と多少の間隔を保った位置
に加熱機構部３が点線で示す如く配設されており、該加
熱機構部３はヒータ４と金属均熱板５とで構成されてい
る。In Figures (A) and (B), a heating mechanism section 3 is disposed at a predetermined position in the vacuum chamber 1 at a certain distance from the substrate 2 and the Bti substrate 2, as shown by dotted lines, and the heating The mechanism section 3 is composed of a heater 4 and a metal heat equalizing plate 5.
また該基板２の薄膜形成面と対向する位置には、所定の
間隔を保って蒸着ソース６を配置している。Further, a vapor deposition source 6 is arranged at a position facing the thin film forming surface of the substrate 2 with a predetermined interval maintained therebetween.
なお、１ａは上記基板２を図示矢示方向に該真空チャン
バ′１から出し入れする出入口である。Incidentally, reference numeral 1a denotes an entrance and exit port through which the substrate 2 is taken in and taken out from the vacuum chamber '1 in the direction of the arrow in the figure.
かから構成される装置で、上記真空チャンバ１内をＩ
Ｘ １０’ Ｔｏｒｒ程度に減圧した状態でヒータ４に
所定の電圧を負荷し、その輻射熱で基板２を５〜６００
°Ｃ程度までその裏面から加熱する。The inside of the vacuum chamber 1 is
A predetermined voltage is applied to the heater 4 while the pressure is reduced to approximately X 10' Torr, and the substrate 2 is heated to a
Heat from the back side to about °C.
一方図示されていない電子銃から射出する電子ビームを
蒸着ソース６の表面ｐ部に照射し、該蒸着ソース６の表
面ｐ部から例えばシリコン（Ｓｉ）にアンチモン（Ｓｂ
）等の不純物を混入した分子を図示りの破線で示す如く
蒸発させて、上記基板２の表面に所要のエピタキシャル
層を蒸着形成させている。On the other hand, an electron beam emitted from an electron gun (not shown) is irradiated onto the surface p portion of the vapor deposition source 6, and from the surface p portion of the vapor deposition source 6, for example, silicon (Si) is coated with antimony (Sb).
) and other impurities are evaporated as shown by the broken line in the figure to form a required epitaxial layer on the surface of the substrate 2.
この場合、基板２の表面に均質で且つ均一な厚さで上記
エピタキシャル層を形成させるには、該基板２の表面温
度がムラなく且つ均一であることが必要である。゛
従って従来はヒータ４と基板２の間に多少の間隔を保っ
て金属均熱板５を配置し、ヒータ４からの輻射熱を一度
該金属均熱板５で受けて温度プロファイルを滑らかにし
た上で該金属均熱板５から射出する輻射熱で基板２を加
熱する方法をとっている。In this case, in order to form the epitaxial layer on the surface of the substrate 2 with a uniform thickness, it is necessary that the surface temperature of the substrate 2 be even and uniform. Therefore, in the past, a metal heat-uniforming plate 5 was placed between the heater 4 and the substrate 2 with a certain distance, and the radiant heat from the heater 4 was once received by the metal heat-uniforming plate 5 to smooth the temperature profile. In this method, the substrate 2 is heated by radiant heat emitted from the metal heat-uniforming plate 5.
しかしこの場合、必ずしも−様でないヒータ４からの輻
射熱が金属均熱板５内の熱伝導で解消されず該金属均熱
板５の温度分布にムラが生ずることから、基板全面の均
一加熱ができず均質で且つ均一な厚さのエピタキシャル
層の形成を阻害している。However, in this case, the radiant heat from the heater 4, which is not necessarily uniform, is not eliminated by heat conduction within the metal heat-uniforming plate 5, resulting in uneven temperature distribution of the metal heat-uniforming plate 5, making it impossible to uniformly heat the entire surface of the board. This hinders the formation of an epitaxial layer that is homogeneous and has a uniform thickness.
ヒータと基板との間に金属均熱板を挿入する従来の方法
では、ヒータからの輻射熱の部分的な差異が該金属均熱
板では充分に均一化されないために基板全面の均一加熱
が出来ないと云う問題があった。In the conventional method of inserting a metal heat-uniforming plate between the heater and the substrate, the metal heat-uniforming plate cannot sufficiently uniformize the local differences in the radiant heat from the heater, making it impossible to uniformly heat the entire surface of the substrate. There was a problem.
上記問題点は、半導体ウェハ等の基板表面に薄膜層を蒸
着形成する真空成膜装置の基板加熱機構であって、
基板加熱用のヒータブロックと該基板の保持台との間に
、流体封入型均熱板を相互に密着させて形成してなる真
空成膜装置の基板加熱機構によって解決される。The above problem lies in the substrate heating mechanism of a vacuum film forming apparatus that deposits a thin film layer on the surface of a substrate such as a semiconductor wafer. This problem is solved by a substrate heating mechanism of a vacuum film forming apparatus which is formed by closely adhering heat equalizing plates to each other.
基板を加熱する場合の温度分布を全面にわたって均一に
するには該基板に対する輻射熱を均一にする必要がある
。In order to make the temperature distribution uniform over the entire surface when heating a substrate, it is necessary to make the radiant heat uniform to the substrate.
本発明になる基板加熱機構では、金属板の固体熱伝導に
よる輻射熱の均一化に代えて、基板をカバーするに足る
大きさを有する流体封入型均熱板内の流体による熱伝導
で該流体封入型均熱板の基板側表面の温度分布を意識的
に均一にし、射出する輻射熱の均一化によって所定の基
板全面の−様な加熱を可能としている。In the substrate heating mechanism according to the present invention, instead of uniformizing radiant heat through solid heat conduction of a metal plate, the fluid is sealed by heat conduction by a fluid in a fluid-filled soaking plate having a size sufficient to cover the substrate. The temperature distribution on the substrate-side surface of the mold heat-uniforming plate is intentionally made uniform, and by making the emitted radiant heat uniform, it is possible to uniformly heat the entire surface of a given substrate.
第１図は本発明になる真空成膜装置の基板加熱機構の例
を示す断面図である。FIG. 1 is a sectional view showing an example of a substrate heating mechanism of a vacuum film forming apparatus according to the present invention.
図で、基板２をカバーするに足りる大きさを備えた例え
ば円板状の流体封入型均熱板１０は、タンタル（Ｔａ）
やモリブデン（Ｍｏ）等の如く安定した金属板を溶接し
て形成した円形の密閉板１１の中に例えばヘリウム（ｌ
ｉｅ）や窒素（Ｎ２）等の不活性ガス１２を密封したも
のである。In the figure, a disk-shaped fluid-filled soaking plate 10 having a size sufficient to cover the substrate 2 is made of tantalum (Ta).
For example, helium (L) is placed inside a circular sealing plate 11 formed by welding a stable metal plate such as molybdenum (Mo) or molybdenum (Mo).
ie) or an inert gas 12 such as nitrogen (N2).
また、該流体封入型均熱板１０の一面には固定板１３ａ
で基板２を挟持固定している円形の保持台１３を接する
状態で配置し、他面には例えば第２図におけるヒータ４
を石英等で被覆形成したヒータブロック１４を密着させ
ている。Further, a fixing plate 13a is provided on one surface of the fluid-filled type soaking plate 10.
A circular holding table 13, which clamps and fixes the substrate 2, is placed in contact with the holding table 13, and on the other side, for example, the heater 4 shown in FIG.
A heater block 14, which is coated with quartz or the like, is placed in close contact with the heater block 14.
かかる構成になる基板加熱機構では、ヒルタブロック１
４から発する熱の全部が直接密閉板１１の外壁に伝導す
るが、その熱の大部分は密封されている不活性ガス１２
中に放出する。ここで該ガス１２の温度が上昇しその熱
が密閉板１１の他面から輻射熱となって射出し基板２を
加熱している。In the substrate heating mechanism having such a configuration, the Hilta block 1
4 is directly conducted to the outer wall of the sealing plate 11, but most of the heat is transferred to the sealed inert gas 12.
Release inside. Here, the temperature of the gas 12 rises, and the heat becomes radiant heat from the other surface of the sealing plate 11, heating the injection substrate 2.
この際、上記密閉板ｌｌ中の不活性ガス１２の流動性が
温度分布のムラを解消するため該密閉板１１から射出す
る輻射熱は均一となり、基板２はその全面にわたって均
一に加熱される。At this time, since the fluidity of the inert gas 12 in the sealing plate 11 eliminates unevenness in temperature distribution, the radiant heat emitted from the sealing plate 11 becomes uniform, and the substrate 2 is heated uniformly over its entire surface.
上述の如く本発明により、ヒータから発する熱で半導体
ウェハ等の基板を加熱する際に、効率的 □で且つ該基
板全面を温度分布のムラなく均一に加熱することができ
る真空成膜装置の基板加熱機構を提供することができる
。As described above, the present invention provides a substrate for a vacuum film forming apparatus that can efficiently and uniformly heat the entire surface of the substrate without uneven temperature distribution when heating a substrate such as a semiconductor wafer with heat emitted from a heater. A heating mechanism can be provided.
なお本発明の説明に当たっては、密閉板中に密封する流
体に不活性ガスを使用しているが、該不活性ガスに代え
てシリコンオイル等の耐熱性ある液体をその熱膨張分を
見越した量だけ封入しても同等の効果を得ることができ
る。In the explanation of the present invention, an inert gas is used as the fluid sealed in the sealing plate, but instead of the inert gas, a heat-resistant liquid such as silicone oil is used in an amount that takes into account the thermal expansion. The same effect can be obtained by enclosing only
第１図は本発明になる真空成膜装置の基板加熱機構の例
を示す断面図、
第２図は従来の真空成膜装置の基板加熱機構を示した図
、
である。図において、
２は基板、 ４はヒータ、
１０は流体封入型均熱板、
１１は密閉板、 １２は不活性ガス、１３は保持
台、 １３ａは固定板、１４はヒータブロック、
をそれぞれ表わす。
不発６月（てなるｊ１空Ａ膜換慴ｔの］５牛（力ロ臭外
ｐ町溝のイ列哨斤ごｔダ１幻因
単゛１ 図
（Ａ）
（Ｂ）
Ｋｆ、の鼻空六醇Ｉ装置の甚４及加熱オ蔑１１モ余した
工く阜 ２ 図FIG. 1 is a sectional view showing an example of a substrate heating mechanism of a vacuum film forming apparatus according to the present invention, and FIG. 2 is a diagram showing a substrate heating mechanism of a conventional vacuum film forming apparatus. In the figure, 2 is a substrate, 4 is a heater, 10 is a fluid-filled soaking plate, 11 is a sealing plate, 12 is an inert gas, 13 is a holding table, 13a is a fixed plate, and 14 is a heater block. Unexploded June (Tenaru j1 sky A membrane replacement) 5 cows (powerful odor outside p town ditch I column goto da 1 phantom cause unit 1 Figure (A) (B) Kf, nose Figure 2 of the construction that left 4 and 11 units of heating and cooling equipment.
Claims (1)
空成膜装置の基板加熱機構であって、基板加熱用のヒー
タブロック（１４）と該基板（２）の保持台（１３）と
の間に、流体封入型均熱板（１０）を相互に密着させて
形成してなることを特徴とする真空成膜装置の基板加熱
機構。A substrate heating mechanism of a vacuum film forming apparatus that deposits a thin film layer on the surface of a substrate such as a semiconductor wafer, and includes a heater block (14) for heating the substrate and a holding table (13) for the substrate (2). 1. A substrate heating mechanism for a vacuum film forming apparatus, characterized in that the fluid-filled soaking plates (10) are formed in close contact with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3226388A JPH01208394A (en) | 1988-02-15 | 1988-02-15 | Substrate heating mechanism for vacuum film-forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3226388A JPH01208394A (en) | 1988-02-15 | 1988-02-15 | Substrate heating mechanism for vacuum film-forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01208394A true JPH01208394A (en) | 1989-08-22 |
Family
ID=12354126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3226388A Pending JPH01208394A (en) | 1988-02-15 | 1988-02-15 | Substrate heating mechanism for vacuum film-forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01208394A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012052243A (en) * | 2011-12-01 | 2012-03-15 | Tokyo Electron Ltd | Vapor deposition device |
| JP2012184489A (en) * | 2011-03-08 | 2012-09-27 | Sumitomo Electric Ind Ltd | Vacuum deposition apparatus |
-
1988
- 1988-02-15 JP JP3226388A patent/JPH01208394A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012184489A (en) * | 2011-03-08 | 2012-09-27 | Sumitomo Electric Ind Ltd | Vacuum deposition apparatus |
| JP2012052243A (en) * | 2011-12-01 | 2012-03-15 | Tokyo Electron Ltd | Vapor deposition device |
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