KR101200357B1 - Gas injection apparatus and film depositing system having the same - Google Patents

Abstract

The present invention relates to a gas injection device and a thin film deposition system having the same, a raw material transfer unit for transferring deposition material, an inflow space into which the deposition material is introduced, a vaporization space to vaporize the introduced deposition material, and vaporized deposition Provided is a gas injector including an injector portion including an injection space for injecting raw materials and heat generating means at least partially exposed in the vaporization space of the injector portion. At least a portion of the heating element of the heat generating means may be exposed to the vaporization space so that radiant heat of the heating element may be directly supplied to the vaporization space, thereby reducing heat loss and improving vaporization efficiency.

Heat generating means, powder, evaporation raw material, vaporization, radiant heat, heating element

Description

Gas injection apparatus and thin film deposition system having same {Gas injection apparatus and film depositing system having the same}

The present invention relates to a gas injector and a thin film deposition system having the same, and to a gas injector having a heating means capable of improving evaporation efficiency by exposing a heating element to a vaporization space in which powder in powder form is vaporized by heat. will be.

In general, an organic thin film deposition apparatus vaporizes an organic raw material in a powder form dried to several μm or less to form an organic thin film on a substrate. Unlike inorganic materials, organic raw materials used in manufacturing organic thin films do not require high vapor pressure, and are easily decomposed and modified at high temperatures. Due to the characteristics of such a material, a conventional organic thin film is charged onto a tungsten crucible, and the crucible is heated to vaporize the organic material and deposited on a substrate.

1 is a conceptual diagram of a conventional organic thin film deposition system.

Referring to FIG. 1, a conventional organic thin film deposition apparatus includes a reaction chamber 10, a substrate 20 disposed above the reaction chamber 10, and a predetermined deposition raw material 40 below the reaction chamber 10. It includes a stored crucible 30.

Here, in order to deposit a predetermined organic thin film on the substrate 20, the crucible 30 is heated to evaporate the deposition raw material 40 inside the crucible 30, and the vaporized deposition raw material is deposited on the substrate 20. .

In the case of deposition through the conventional organic thin film deposition apparatus, the amount of deposition raw materials that can be stored in the crucible 30 is limited, so that a new deposition raw material is placed in the crucible 30 for each deposition process, or several to several tens of times. After the first deposition process, a new deposition material must be injected into the crucible 30. In this case, in order to newly inject the deposition material into the crucible 30, the deposition process should be stopped and then the deposition material should be injected into the crucible 30 in the chamber 10. This causes a problem of low yield of the thin film deposition process. In addition, a large amount of deposition raw material is heated through the crucible 30 to deposit a thin film on the substrate. Therefore, since the amount of the deposition raw material vaporized through the heated crucible 30 is not constant for every substrate, there arises a problem that the thin film reproducibility deteriorates.

In addition, since the heat of the crucible 30 that has been heated for vaporizing the deposition raw material is transferred to the substrate disposed above the crucible 30, a problem occurs that the substrate is thermally damaged.

In order to solve the above problems, an injector type injection apparatus is provided which receives a deposition material in a powder form from the outside of the chamber, vaporizes it, and sprays it onto a substrate inside the chamber. The injection device is provided with a rod-shaped body and a heating means provided in the body to heat the body. When the deposition material in the form of powder is provided to the inside of the injector through this, the heating means heats the body, and the powder is deposited in the form of powder in the inner space of the body by the heated body, and is sprayed onto the substrate inside the chamber. In this case, the heat efficiency is lowered because heat of the heat generating means is provided to the vapor deposition raw material in the form of powder and then again provided to the body. As such, the thermal efficiency is lowered, thereby causing a problem that the vaporization efficiency of the deposition material is lowered. Of course, in order to increase the vaporization efficiency, the heat of the heating means must be increased. However, when the heat of the heat generating means is increased, the heat of the heat generating means raises the temperature of the substrate, causing a problem of thermal damage to the substrate.

Accordingly, the present invention provides a gas injection device capable of improving the vaporization efficiency of the deposition raw material by preventing the heat loss by arranging the heating means in the vaporization space of the injection device to directly vaporize the powder deposition material flowing into the vaporization space to prevent heat loss. It is an object of the present invention to provide a thin film deposition system.

An injector unit comprising a raw material conveying unit for transferring the deposition raw material according to the present invention, an inflow space into which the deposition raw material flows, a vaporization space for vaporizing the introduced deposition raw material, and an injection space for spraying the vaporized deposition raw material; Provided is a gas injector including a heat generating means in which at least part of the injector portion is exposed to the vaporization space.

The heat generating means is advantageously provided with a heat generating source portion for providing heat generating energy, and at least one heat generating element for generating heat in accordance with the heat generating energy.

The heating element may be part of the injector portion forming the vaporization space, attached to the inner surface of the vaporization space, or may be fixed in the vaporization space.

The heating element is preferably made of stainless steel or Inconel (Inconel).

It is effective to further provide a plurality of heat transfer members provided in the vaporization space.

The injector unit preferably includes a frame body provided with the inflow space and the injection space and an outer body provided on the side of the frame body to form the vaporization space.

The injector part includes a first body part in which the inflow space is formed, a second body part surrounding at least a portion of the first body part and forming the vaporization space between the first body part, and the second body part or It is possible to include a third body portion surrounding the first and second body portions and forming the injection space between the second body portion or the first and second body portions.

Preferably, the raw material conveying unit includes a central axis that receives the deposition raw material and provides it to the inflow space and rotates.

In addition, a deposition chamber having a deposition space according to the present invention, a powder supply apparatus for providing a deposition material in powder form, a raw material transfer unit for transferring the provided deposition material, an inflow space into which the deposition material flows, and an incoming deposition A thin film deposition system comprising an injector unit including a vaporization space for vaporizing a raw material, an injector part including an injection space for injecting vaporized deposition raw material, and a gas injector having at least a portion of the injector part exposed to the vaporization space. To provide.

The heat generating means includes a heat generating source portion for providing heat energy, and at least one heat generating element for generating heat according to the heat energy, and the heat generating element is introduced into the injector portion, part of which forms the vaporization space, or the vaporization. It is effective to be attached to the inner surface of the space or fixed in the vaporization space.

The heating element is preferably made of stainless steel or Inconel (Inconel).

The deposition chamber includes a substrate settled portion in which the substrate is placed, and the substrate settled portion is disposed in any one of a bottom region, an upper side region, and a sidewall region of the deposition chamber, and the gas injector is disposed in the substrate. It is effective to be located in the face area corresponding to the tooth.

In addition, the step of placing the substrate in the chamber according to the present invention, the step of supplying the deposition material in the form of powder into the inlet space of the gas injection device, the vaporization space in which at least a portion of the heating means is exposed to the introduced deposition material And vaporizing the radiant heat of the heat generating means, transferring the vaporized deposition raw material to an injection space, and spraying the vaporized deposition raw material of the injection space on the substrate. To provide.

As described above, the present invention arranges heat generating means inside an injector having a vaporization space, so that at least a portion of the heat generating means of the heat generating means is exposed to the vaporization space so that radiant heat of the heat generating element is directly supplied to the vaporization space to reduce heat loss. It can reduce and improve the vaporization efficiency.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

2 is a block diagram of a thin film deposition system according to an embodiment of the present invention. 3 is a partial cutaway perspective view of a gas injection apparatus according to an embodiment. 4 is a vertical cross-sectional view of a gas injection device according to one embodiment.

2 to 4, the thin film deposition system according to the present embodiment includes a deposition chamber 100 in which a substrate 101 is placed, a powder supply device 200 providing a deposition material in powder form, and a powder form. And a gas injection device 300 for vaporizing a deposition raw material of the vapor deposition material and spraying the vapor deposition material onto the substrate 101 of the deposition chamber 100.

The deposition chamber 100 includes a lower chamber 110 having a reaction space and a chamber lid 120 covering the lower chamber 110. The lower chamber 110 is manufactured in a cylindrical shape with an open top. In addition, the chamber lid 120 is manufactured in a plate shape covering an open upper region of the lower chamber 110. The substrate setter 130 is positioned in the reaction space of the deposition chamber 100. That is, as shown in FIG. 2, the substrate setter 130 is positioned on the bottom surface of the lower chamber 110. However, the present invention is not limited thereto, and the substrate setter 130 may be located at the side of the lower chamber 110 or may be located at the chamber lid 120. The position of the gas injection device 300 may vary according to the position of the substrate setter 130. This is because the gas injection device 300 is preferably located in the region facing the substrate 101. In addition, although not shown, the deposition chamber 100 includes an entrance to and from the substrate 101. And, it may be further provided with a pressure adjusting unit for maintaining the pressure of the deposition chamber 100. In addition, a driving member for elevating or rotating the substrate setter 130 may be further provided.

The powder supply apparatus 200 gas-sprays the deposition raw material in a powder form using a powder storage unit 210 in which the deposition raw material in powder form is stored, a carrier gas supply unit 220 supplying a carrier gas, and a carrier gas. It is provided with a powder supply unit 230 for supplying the device 300. The powder supply unit 230 and the powder storage unit 210, and the powder supply unit 230 and the carrier gas supply unit 220 are connected through pipes. And the pipes are provided with a plurality of valves for opening and closing them. In addition, the powder supply unit 230 is also connected to the gas injection device 300 through a pipe. In addition, a part of the pipe is provided with a separate valve for opening and closing the pipe. At this time, the powder supply unit 230 provides a predetermined amount of deposition raw material. It is effective to provide a certain amount of deposition raw material by using the carrier gas directly, by using a pressure difference by the gas, or by using the characteristics of the structure.

The gas injection device 300 vaporizes the deposition material in the form of powder provided from the powder supply device 200 and injects the substrate 101 inside the chamber 100.

Accordingly, the gas injection device 300 is coupled to the raw material conveying unit 310 and the raw material conveying unit 310 which receives the powdered evaporation raw material from the powder supply device 200, and an inflow space I into which the evaporating raw material is introduced. And an injector unit 320 including a vaporization space V for vaporizing the deposited deposition material, an injection space J for injecting the vaporized deposition material, and the vaporization space V of the injector 320. ) Is provided with at least a portion of the heat generating means 330.

The raw material conveying part 310 extends inward from the outside of the chamber 100, communicates with the powder supply device 200, and receives a deposition material in powder form, and a center axis 311 and the outside of the chamber 100. And a housing 312 surrounding the protruding central axis 311 and a sealing member 313 sealing the space between the housing 312 and the central axis 311. Although not shown, a rotation member (eg, a motor) for rotating the central axis 311 is further provided. Here, it is effective to use a magnet seal as the sealing member 313. In addition, the deposition raw material of the powder supply apparatus 200 may be provided through the housing 312.

The injector part 320 includes a body part 321 in which an inflow space I, a vaporization space V, and an injection space J are formed. At this time, the body portion 321 is manufactured in the shape of a pipe (that is, a pipe or rod) having a plurality of spaces therein. Here, the body 321 has an inner frame body 321-1 having an H shape as shown in FIG. 4, and an outer body 231-2 having the frame body 321-1 provided therein. do. The outer body 231-2 and the frame body 321-1 may be manufactured as a single body, and may be combined after being manufactured in different bodies.

Here, the outer body 321-2 covers the upper part of the frame body 321-1 to form an inflow space I, and the upper cover 321-2a and the lower part of the frame body 321-1 to spray the space. A lower cover 321-2b forming (J) and a side cover 321-2c covering the side surface of the frame body 321-1 to form an injection space (J). In this case, the upper cover 321-2a, the lower cover 321-2b, and the side cover 321-2c may be manufactured in a single body or may be manufactured in different bodies. 3 and 4, two vaporization spaces V are provided at both sides of the inflow space I and the injection space J. As shown in FIG. Thus, two side covers 321-2c are attached to the frame body 321-1.

At this time, the inflow space (I) is in communication with the central axis 311 of the raw material conveying part (310). Accordingly, the upper cover 321-2a is provided with a first communication hole 322-1 communicating with the central axis 311. At this time, the communication hole 322 is effectively located in the center region of the upper cover (321-2a). That is, it is effective to be located in the center of the inflow space I. In this way, the deposition material in the form of powder provided through the central axis 311 is provided to the central region of the inflow space (I).

At both end portions of the inflow space I (that is, the inflow space I is formed in a substantially bar shape and refers to both edge regions of the bar), the inflow space I is shown in FIG. 3. At least one second communication hole 322-2 communicating with the vaporization space V is provided. In this case, the second communication hole 322-2 is provided in the side region of the frame body 321-1. As a result, the deposition raw material injected into the center of the inflow space I spreads widely in the inflow space I and provides a vaporization space V in the end region of the inflow space. Of course, the present invention is not limited thereto, and the second communication hole 322-2 may be formed over the entire surface of the side of the frame body 321-1. It may also be formed locally in the central region of the side surface.

In addition, at least one third communication hole 322-3 communicating with the vaporization space V and the injection space J is provided. As shown in FIG. 3, the frame body 321-1 is positioned at a central area of the side of the frame body 321-1. As a result, the vapor deposition material vaporized in the vaporization space V is provided to the injection space J through the third communication hole 322-3.

As illustrated in FIG. 4, a plurality of spray nozzles 323 is provided on the lower surface of the spray space J, that is, the lower cover 321-2b facing the substrate 101. As a result, vaporized deposition raw material provided to the injection space J is provided to the substrate 101 through the injection nozzle 323.

At this time, the vaporization space (V) vaporizes the vapor deposition material in the form of powder using the heat of the heat generating means (330).

The heat generating means 330 includes a heat generating element 331 in the form of a rod and a heat generating source portion 332 for providing heat generating energy to the heat generating element 331.

In the present embodiment, a source for providing electrical energy to the heating source unit 332 is used, and a material for converting electrical energy into thermal energy is used for the heating element 331. Therefore, it is preferable to use a conductive material as the heating element 331. In this case, as shown in FIGS. 3 and 4, a portion of the heating element 331 is exposed to the vaporization space V. As shown in FIG. The heating element 331 is effective to use a material in which the exposed surface is not adsorbed vapor deposition raw material well in the vaporization space (V). That is, it is effective to manufacture the heating element 331 by using stainless steel or Inconel, which is a clean and smooth material.

By exposing a portion of the heating element 331 to the vaporization space (V) as described above, radiant heat of the heating element 331 may be directly transmitted to the vaporization space (V) to reduce heat loss. Through this, the vaporization efficiency in the vaporization space (V) can be improved. In addition, a portion of the heating element 331 is embedded in the frame body portion 321-1. As a result, the frame body 321-1 may be heated by the radiant heat of the heating element 331 to heat the inflow space I and the injection space J. Therefore, the vapor deposition material in the form of powder flowing in the inflow space I may be preliminarily vaporized. In this case, the heating element 331 may form a recessed groove in the side of the frame body portion 321-1, and introduces the heating element 331 into the recessed groove so that only a part thereof is exposed to the vaporization space (V). have.

Of course, the gas injection apparatus of this embodiment is not limited to this, and various modifications are possible.

5 is a cross-sectional view of the gas injection device according to the first modification of the embodiment.

As illustrated in FIG. 5, a plurality of heat transfer members 324 may be provided in the vaporization space V. FIG. The heat transfer member 324 is preferably made of a material having excellent thermal conductivity to quickly transfer the radiant heat of the heat generating means 330.

At this time, the heat transfer member 324 is provided in the vaporization space (V) in contact with the deposition material in the form of powder flowing into the vaporization space (V). This may vaporize the deposition material in the form of a powder. That is, the contact surface that can receive heat can be increased to increase the vaporization efficiency of the deposition material. As the heat transfer member 324, a thermally conductive ball is used as shown in FIG. 5. Of course, it is not limited to this, A conductive mesh network can also be used.

6 is a partially cutaway perspective view of the gas injection device according to the second modification of the embodiment.

As illustrated in FIG. 6, the heat generating means 330 may be provided on an inner wall of the vaporization space V of the injector 320.

The injector part 320 communicates with the raw material conveying part 310, surrounds the first body part 325 provided with the inflow space I, and at least a part of the first body part 325, and the vaporization space V is The second body portion 326 is provided, and the third body portion 327 overlapping the first and second body portions 325 and 326 and a part thereof is provided. At this time, as shown in FIG. 6, the first body 325 is manufactured in a square pillar shape. And, the second body portion 326 is manufactured in a shape surrounding at least three sides of the square pillar portion. The third body portion 327 is manufactured in a columnar shape in close contact with the bottom surface of the first body portion 325 and the second body portion 326. Here, the first body 325 is in communication with the central axis 311 of the raw material conveying part 310. Therefore, the first body portion 325 and the second body portion 326 is provided with a hole through which the central axis 311 passes. A plurality of holes communicating the inflow space I and the vaporization space V are provided in the first body portion 325. In addition, a plurality of holes communicating the vaporization space V and the injection space J are provided in the second and third body parts 326 and 327. A plurality of injection nozzles is provided in the third body portion 327.

In the present modification, a plurality of heating elements 331 of the heat generating means 330 is attached to the inner surface of the second body portion 326 constituting the vaporization space (V). Here, the number of the heating elements 331 is not limited, and one or more heating elements may be provided. As such, the heating element 331 may be positioned on the inner side of the second body 326 to reduce the radiant heat loss of the heating element 331 in the vaporization space V and to improve the vaporization efficiency of the deposition material. Of course, the present invention is not limited thereto, and the heating element 331 may be attached to an outer surface of the first body part 325 constituting the vaporization space (V). In this case, the heating element 331 may be adhesively fixed to the surface of the first or second body portion 326 through an adhesive member including an adhesive, a screw or a bolt.

7 is a partially cutaway perspective view of the gas injection device according to the third modification of the embodiment.

As shown in FIG. 7, the heat generating means 330 may be located in the vaporization space V of the injector unit 320. That is, the entire heating element 331 of the heat generating means 330 may be exposed to the vaporization space (V).

In addition, the injector unit 320 communicates with the raw material transfer unit 310 and surrounds the first body portion 325 provided with the inflow space I, the first body portion 325, and the first body portion 325. The second body portion 326 forming the vaporization space (V) between the third body portion surrounding the second body portion 326 and forming the injection space (J) between the second body portion 326 327 is provided.

Here, the first to third body parts 325, 326, and 327 are manufactured in a rod shape having an internal space. In Fig. 7, the rod-shaped cross section is shown. However, the present invention is not limited thereto, and the cross section may be formed in a polygonal or elliptic rod shape. The first body 325 is provided with a second communication hole 322-2 for communicating the vaporization space V and the inflow space I with each other. In the second body 326, a third communication hole 322-3 communicating the vaporization space V and the injection space J is located. At this time, it is effective that the second communication hole 322-2 and the third communication hole 322-3 are not positioned on the same extension line extending from the center of the body portion. That is, the second communication hole 322-2 is located in the lower region of the first body portion 325, and the third communication hole 322-3 is located in the upper region of the second body portion 326.

In the present modification, the plurality of heat generating elements 331 of the heat generating means 330 is located in the vaporization space V. FIG. That is, the heating element 331 is provided in the region between the first body portion 325 and the second body portion 326. Through this, the vaporization efficiency of the vaporization space can be improved. At this time, it is effective that both ends of the heating element 331 is fixed to the injector unit 320. In addition, a fixing member for supporting and fixing the heating element 331 may be provided in the vaporization space V as necessary. As shown in FIG. 7, the heating element 331 is uniformly disposed in the vaporization space V to directly heat the vaporization space V, and also heat the inflow space I by radiant heat. That is, the first body part 325 and the second body part 326 are heated by the radiant heat of the heating element 331. At this time, since the third body portion 327 is not directly heated by the heating element 331, a temperature lower than the temperature inside the vaporization space V may be maintained. Through this, high heat of the vaporization space (V) can be prevented from being transferred to the substrate 101 positioned below the chamber.

The descriptions of the above-described modifications are not limited to the respective modifications, and may be combined with each other, and the combined techniques may be applied to the embodiments.

Hereinafter, the operation of the gas injection apparatus of the present embodiment having the above-described configuration and a thin film deposition method using the thin film deposition system having the same will be described.

First, the substrate 101 is placed on the substrate setter 130 of the chamber 100. Subsequently, the powder supply apparatus 200 provides the gas injection apparatus 300 with deposition material in the form of powder corresponding to the thin film to be deposited on the substrate 101.

The gas injection device 300 receives the deposition material through the raw material transfer part 310. At this time, the central axis 311 of the raw material conveying unit 310 is rotated. The deposition raw material is provided in the inflow space I of the injector unit 320 through the central axis 311. The deposition raw material provided in the inflow space I is partially vaporized primarily in the inflow space I. The body part forming the inflow space I is heated by the radiant heat of the heating element 331 of the heat generating means 330 and the inflow space I is heated by the radiant heat of the body as in the previous embodiment and in the modification. Because. Thereafter, the deposition raw material uniformly spread in the inflow space I is provided to the vaporization space V through the second communication hole 322-2. The vapor deposition raw material provided to the vaporization space V is vaporized by the radiant heat of the heat generating body 331 of the heat generating means 330 which at least one part was exposed in the vaporization space V. As shown in FIG. At this time, since the radiant heat of the heating element 331 is directly provided to the deposition material, heat loss can be prevented and the vaporization efficiency of the deposition material can be improved. The vapor deposition material thus vaporized is provided to the injection space J through the second communication hole 322-2. The vaporized deposition raw material provided in the injection space J is injected to the substrate 101 located under the gas injection device 300 through the nozzle. At this time, as mentioned above, the raw material conveying part 310 of the gas injection device 300 rotates, and thus the injector part 320 rotates. Accordingly, the vaporized deposition material may be uniformly sprayed on the entire surface of the substrate 101 by the rotating injector 320. The vaporized deposition material sprayed on the substrate 101 is adsorbed on the surface of the substrate 101 to form a thin film. Thereafter, the substrate 101 on which the thin film is formed is unloaded to the outside of the chamber 100 to complete the thin film deposition process.

In addition, the thin film deposition system of the present invention is not limited to the above-described embodiment, and various modifications are possible.

8 and 9 are block diagrams of a thin film deposition system according to a modified example of the embodiment.

As shown in FIG. 8, the gas injection device 300 may be positioned on the bottom surface of the chamber 100, and the substrate 101 may be disposed in an upper wall region of the chamber 100. That is, vaporized deposition raw material is sprayed on the lower region of the substrate 101 in a bottom-up manner, and the deposition raw material is deposited on the upper substrate 101.

In addition, as shown in FIG. 9, the gas injection device 300 may be positioned on one side of the chamber 100, and the substrate 101 may be disposed on a side opposite to the gas injection device 300. Through this, the gas injection apparatus 300 sprays the vaporized deposition raw material in the lateral direction and deposits a thin film on the substrate 101 positioned on the side.

In the above-described modification, it is effective to rotate at least one of the substrate 101 and the gas injection device 300.

The present invention is not limited to the above-described embodiments, but may be embodied in various forms. In other words, the above-described embodiments are provided so that the disclosure of the present invention is complete, and those skilled in the art will fully understand the scope of the invention, and the scope of the present invention should be understood by the appended claims .

1 is a conceptual diagram of a conventional organic thin film deposition system.

2 is a block diagram of a thin film deposition system according to an embodiment of the present invention.

3 is a partial cutaway perspective view of a gas injection device according to one embodiment;

4 is a vertical sectional view of a gas injector according to one embodiment.

5 is a sectional view of a gas injection device according to a first modification of the embodiment;

6 is a partially cutaway perspective view of a gas injector according to a second modification of the embodiment;

7 is a partial cutaway perspective view of a gas injection device according to a third modification of the embodiment;

8 and 9 are block diagrams of a thin film deposition system according to a modification of the embodiment.

<Explanation of symbols for major symbols in the drawings>

100: vapor deposition apparatus 200: powder supply apparatus

300: gas injection device 310: raw material transfer unit

320: injector portion 330: heat generating means

Claims (13)

Raw material transfer unit for transferring the deposition material; An injector unit including an inflow space into which the deposition material is introduced, a vaporization space to vaporize the introduced deposition material, and an injection space to inject the vaporized deposition material; And A heat generating means formed in the body portion in the injector portion and at least partially exposed to the vaporization space; The heating means includes a heating source for providing heating energy, and at least one heating element that generates heat according to the heating energy and is made of stainless steel or Inconel, And a plurality of heat transfer members provided in the vaporization space. delete The method according to claim 1, The heating element is a gas injection device, a portion of which is introduced into the injector portion constituting the vaporization space, attached to the inner surface of the vaporization space, or fixed in the vaporization space. delete delete The method according to claim 1, The injector unit has a frame body provided with the inflow space and the injection space and an outer body provided on the side of the frame body to form the vaporization space. The method according to claim 1, The injector part includes a first body part in which the inflow space is formed, a second body part surrounding at least a portion of the first body part and forming the vaporization space between the first body part; And a third body portion surrounding the second body portion or the first and second body portions and forming the injection space between the second body portion or the first and second body portions. The method according to claim 1, The raw material conveying unit comprises a central axis for receiving the deposition raw material provided in the inlet space and rotates. A deposition chamber having a deposition space; A powder supply device for providing a deposition material in powder form; And A gas injection device for vaporizing and spraying the deposition raw material provided from the powder supply device, The gas injection device and the raw material transfer unit for transferring the deposition raw material; An injector unit including an inflow space into which the deposition material is introduced, a vaporization space to vaporize the introduced deposition material, and an injection space to inject the vaporized deposition material; A heat generating means formed in the body portion in the injector portion, the at least part of which is exposed to the vaporization space; A plurality of heat transfer members provided in the vaporization space; The heat generating means includes a heat generating source unit for providing heat generating energy, and at least one heating element generating heat according to the heat generating energy, The heating element is a thin film deposition system, a portion of which is introduced into the injector portion forming the vaporization space, attached to the inner surface of the vaporization space, or fixed in the vaporization space. delete The method of claim 9, The heating element is a thin film deposition system made of stainless steel or Inconel (Inconel). The method of claim 9, The deposition chamber has a substrate settled portion on which the substrate is placed, And the substrate mounting portion is disposed in any one of a bottom surface region, an upper surface region, and a side wall surface region of the deposition chamber, and the gas injector is positioned in a surface region corresponding to the substrate mounting portion. Raw material transfer unit for transferring the deposition material; An injector unit which vaporizes and deposits the deposition raw material, an inflow space into which the deposition raw material flows, a vaporization space to vaporize the introduced deposition raw material, and an injection space to inject the vaporized deposition raw material; Heat generating means in which at least part of the injector portion is exposed in the vaporization space; And a plurality of heat transfer members provided in the vaporization space, wherein the heat generating means includes a heat generating source unit providing heat generating energy, and a gas injecting device generating heat according to the heat generating energy. As Placing the substrate in the chamber; Supplying a deposition material in powder form into the inflow space of the gas injection device; Providing the introduced deposition material to the vaporization space in which at least a portion of the heat generating means is exposed and the plurality of heat transfer members are provided, and vaporizing the radiant heat of the heat generating means and the heat transfer member; Transferring the vaporized deposition material to the spray space; And And spraying the vaporized deposition material of the sprayed space onto the substrate.

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