JP5685433B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

  The present invention relates to a vapor deposition technique for producing, for example, an organic EL display, an organic EL lighting device, a vapor deposition polymer film, and the like.

Conventionally, as this type of film forming apparatus, for example, those described in Patent Documents 1 and 2 are known.
The conventional technique according to Patent Document 1 performs film formation while moving an inline substrate. In such an inline deposition apparatus, a mechanism for moving the substrate is indispensable, so the apparatus configuration is complicated and costly. There is a problem of inviting up.

  On the other hand, in the prior art according to Patent Document 2, a plurality of pipe-shaped nozzles 120 arranged close to each other are connected to a crucible 100 in which an organic substance is stored, and each nozzle 120 has a plurality of openings 125. The crucible 100 is heated to eject organic vapor from each opening 125.

However, in the related art according to Patent Document 2, since the vapor is discharged in a rectangular shape, there is a problem that the evaporation material is wasted on a circular substrate such as a wafer.
In addition, with this conventional technique, it is difficult to make the film thickness distribution uniform, and it is impossible to form a film with a uniform film thickness on a large-area substrate.
In addition, in this prior art, the host material evaporation device and the dopant material evaporation device are mutually contaminated, and it is difficult to make the film quality distribution on the substrate uniform.

JP 2007-146219 A JP 2002-184571 A

The present invention has been made in order to solve such problems of the prior art, and the object of the present invention is to simply form an organic layer having a uniform distribution on the surface of a large film-forming object. An object of the present invention is to provide a technique that can be performed by an apparatus having a configuration.
Another object of the present invention is to provide a technique in which a plurality of vapor emitters are not likely to be contaminated with each other when vapor deposition is performed using different evaporation materials.

The present invention has been made in order to achieve the above object, a vacuum chamber the film-forming target is placed, and a plurality of vapor generating source for generating the vapor of the evaporation materials provided outside the vacuum chamber, of each other A vapor discharge unit having a plurality of vapor discharge units that are isolated from each other and discharge the vapor of the evaporation material supplied from the plurality of vapor generation sources in a plane toward the film formation target, A plurality of vapor discharge units of the vapor discharge unit are arranged radially with a vapor discharge reference point serving as a reference when discharging the vapor of the vaporized material as a center, and the vaporized material according to a distance from the vapor discharge reference point of have a plurality of steam outlet amount released is configured to increase the steam, the plurality of steam emitters, a plurality of heterogeneous vapor of the vaporization material dissimilar from the plurality of vapor source is supplied A vapor discharger for the material Each of the plurality of vapor dischargers having a plurality of vapor discharge devices to which the vapor of the same kind of vaporized material is supplied, and the intervals between the vapor discharge ports of adjacent vapor discharge devices are equal, and It is the vapor deposition apparatus arrange | positioned on the concentric circle centering on a vapor | steam discharge reference point .
The present invention is also effective when the vapor discharger unit has first and second vapor dischargeers that are alternately arranged with respect to the circumferential direction around the vapor discharge reference point .
In the present invention, the plurality of steam generation sources, the steam introduction means for introducing the vapor of the evaporating material from the plurality of steam generation sources to the plurality of steam dischargers, and the plurality of steam dischargers each independently have a temperature. It is effective also when it has the heat insulation structure which prevents heat transfer mutually.
The present invention is also effective when the steam discharge ports of the plurality of steam dischargers are formed in an arc shape .
Hand, the present invention uses any of the vapor deposition apparatus described above, a method of forming an organic film on a substrate surface in a vacuum, a host for forming a vaporization material, the organic thin film layer of the organic EL device This is a vapor deposition method using a material and a dopant material.
In addition, the present invention is a method for forming a film on the substrate surface in a vacuum using any one of the above-described vapor deposition apparatuses, and is a vapor deposition method using lithium fluoride or molybdenum trioxide as an evaporation material.

In the case of the present invention, the plurality of vapor discharge units of the vapor discharge unit are arranged radially with a vapor discharge reference point serving as a reference when discharging the vapor of the vaporized material as a center, at a distance from the vapor discharge reference point. In response to the plurality of vapor discharge ports configured to increase the amount of vapor released from the vaporized material in response , the plurality of vapor dischargers are supplied with vapors of different types of vaporized material from a plurality of vapor generation sources. There are a plurality of vapor discharge devices for different materials, and among the plurality of vapor discharge devices, the vapor discharge ports of adjacent vapor discharge devices are connected to each other. Are arranged on a concentric circle with the vapor discharge reference point as the center, so that the vapor of the evaporation material can be uniformly and planarly discharged from a plurality of vapor discharge devices . substrate Without rotating, the film thickness and film quality uniform film against a large-sized substrate can be formed at high speed.
Further, according to the present invention, since the plurality of vapor emitters are isolated from each other, different evaporation materials (for example, a dopant material and a host material, an evaporation material for generating vapors of the three primary colors of light) Even in the case where film formation is simultaneously performed using the above, there is no possibility that the respective vapor dischargers are contaminated with each other.
Further, according to the present invention, it is not necessary to move the film formation target (fixed film formation), so that it is possible to provide a vapor deposition apparatus having a simple configuration.
In the present invention, when the vapor discharge unit has first and second vapor discharge units alternately arranged in the circumferential direction around the vapor discharge reference point, the vapor discharge unit, the film formation target, Since vapors of different evaporation materials can be sufficiently mixed in between, the film thickness and film quality uniformity of the co-deposited film can be further improved .
In the present invention, the plurality of steam generation sources, the steam introduction means for introducing the vapor of the evaporation material from the plurality of steam generation sources to the plurality of steam discharge devices, and the plurality of steam discharge devices each independently control the temperature. In the case of having a heat insulating structure that prevents heat transfer with each other, when a different evaporation material (for example, a host material and a dopant material) having a large difference in evaporation temperature is used, a steam generation source, a steam introduction means In the case of vapor deposition polymerization, the reaction of the evaporating material is allowed to occur in the vapor generation source, the vapor introducing means and the vapor discharger. Can be prevented.
In the present invention, the steam outlet of the steam ejector is in the case which is formed in an arc shape, film-forming target of a large, in particular a circular or a ring thickness and uniformity of film quality in film formation target object on the form Therefore, for example, an organic EL illumination flat lamp that emits light with a uniform in-plane distribution can be provided.
On the other hand, when any of the above-described vapor deposition apparatuses is used to form an organic film on a substrate surface in a vacuum, a host material and a dopant material for forming an organic thin film layer of an organic EL apparatus are used as an evaporation material. The organic thin film layer of the organic EL device using a large substrate can be formed uniformly and at high speed.
In addition, when any of the above-described vapor deposition apparatuses is used to form a film on the substrate surface in a vacuum, and lithium fluoride is used as an evaporation material, an electron injection layer of an organic EL apparatus using a large substrate is used. It can be formed uniformly and at high speed.
Furthermore, when using any of the above-described vapor deposition apparatuses to form a film on the substrate surface in a vacuum, when using molybdenum trioxide as an evaporation material, an anode buffer layer of an organic EL apparatus using a large substrate is used. It can be formed uniformly and at high speed.

  According to the present invention, for example, in an apparatus for manufacturing an organic EL element, a uniform film can be formed on a large substrate at high speed without rotating the substrate.

(A): A schematic plan view of a vapor discharger according to an embodiment of the vapor deposition apparatus according to the present invention (b): AA line cross-sectional view of the vapor discharger of FIG. The top view for demonstrating arrangement | positioning of the vapor | steam discharge port of the same vapor discharger The top view which shows the other example of the steam discharger in this invention The top view which shows the other example of the steam discharger in this invention (A): schematic plan view of a vapor discharger according to another embodiment of the vapor deposition apparatus according to the present invention (b): a cross-sectional view of the vapor discharger of FIG.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
FIG. 1A is a schematic plan view of a vapor discharger according to an embodiment of the vapor deposition apparatus according to the present invention, and FIG. 1B is a cross-sectional view taken along line AA of the vapor discharger of FIG. is there.
FIG. 2 is a plan view for explaining the arrangement of the vapor discharge ports of the vapor discharger.
Hereinafter, although the vertical relationship of a vapor deposition apparatus is demonstrated based on the structure shown in FIG.1 (b), this invention is not limited to this.

As shown in FIGS. 1 (a) and 1 (b), the vapor deposition apparatus 1 of the present embodiment has a vacuum chamber (not shown) in which a substrate 15 is disposed, and a vapor discharger is provided inside the vacuum chamber. A unit 2 is provided.
The vapor discharger unit 2 is connected to a host material vapor generation source 3h and a dopant material vapor generation source 3d provided outside the vacuum chamber.

  Here, a host material for forming an organic thin film of an organic EL element is accommodated as an evaporation material in the evaporation container 30h of the host material vapor generation source 3h, and is contained in the evaporation container 30d of the dopant material vapor generation source 3d. Contains a dopant material for forming an organic thin film of an organic EL element.

  In the case of the present embodiment, the vapor generation containers 30h and 30d of the host material vapor generation source 3h and the dopant material vapor generation source 3d are respectively temperature-controlled by heating and cooling means (not shown). . Further, the evaporation containers 30h and 30d are configured such that heat is not transmitted to each other by a heat insulating member (not shown).

  Further, the evaporation containers 30h and 30d of the host material vapor generation source 3h and the dopant material vapor generation source 3d are connected to carrier gas supply devices 31h and 31d, respectively, and the carrier gas supplied from the carrier gas source 32 is respectively It is configured so as to be supplied to the evaporation vessels 30h and 30d of the host material vapor generation source 3h and the dopant material vapor generation source 3d.

The vapor discharger unit 2 according to the present embodiment includes a plurality (eight in this example) of host material vapor dischargeers (first vapor discharger) 5h and a plurality (in this example, eight) of dopant materials. And a steam discharger (second steam discharger) 5d.
In the case of the present embodiment, the host material vapor discharger 5h and the dopant material vapor discharger 5d have vapor discharge surfaces 6h and 6d having the same shape.

  Here, the vapor discharge surfaces 6h and 6d of the host material vapor discharger 5h and the dopant material vapor discharger 5d are provided in the same horizontal plane, and are formed in a shape spreading radially around the vapor discharge reference point O. In addition, a plurality of vapor discharge ports 7h and 7d are provided on the vapor discharge surfaces 6h and 6d, respectively.

  The vapor discharge ports 7h and 7d of the host material vapor discharger 5h and the dopant material vapor discharger 5d are arranged radially on line segments passing through the vapor discharge reference point O described above, as will be described later. For example, it is formed in a long hole shape extending in the line segment direction.

  Here, the vapor discharge ports 7h and 7d of the vapor discharger 5h for the host material and the vapor discharger 5d for the dopant material are increased in number according to the distance from the vapor discharge reference point O, so that the vapor of the organic material It is comprised so that discharge | release amount of may increase.

For example, as shown in FIG. 2, the host material for a steam eductor 5h, is one of the segment M ₁ steam outlet 7h ₁ a row on through the steam release reference point O on the vapor discharge surface 6h distribution Furthermore, on the _two line segments M ₂ and M ₃ that pass through the vapor discharge reference point O and extend radially on both sides of the line segment M ₁ , a row of vapor discharge ports 7h ₂ and 7h ₃ are respectively arranged. It is installed.

In the case of the present invention, although not particularly limited, from the viewpoint of more uniformly releasing the vapor of the organic material, the vapor discharge ports 7h ₂ and 7h provided on both sides of the line segment M passing through the vapor discharge reference point O. ₃ is preferably arranged in a line-symmetrical position with respect to the line segment M ₁ .

As for the dopant material for a steam eductor 5d, the steam outlet 7d ₁ of a row on a single line m ₁ through vapor emission reference point O on the vapor discharge surface 6d are arranged, furthermore, the steam release On the two line segments m ₂ and m ₃ that pass through the reference point O and extend radially on both sides of the line segment m ₁ , a row of vapor discharge ports 7d ₂ and 7d ₃ are respectively arranged.

In the case of the present invention, although not particularly limited, from the viewpoint of more uniformly discharging the vapor of the organic material, the vapor discharge ports 7d ₂ and 7d provided on both sides of the line segment m passing through the vapor discharge reference point O. ₃ is preferably arranged in a line-symmetric position with respect to the line segment m ₁ .
The host material vapor discharger 5h and the dopant material vapor discharger 5d are alternately arranged around the vapor discharge reference point O in the circumferential direction.

In the case of the present invention, although not particularly limited, from the viewpoint of more uniformly releasing the vapor of the organic material, the vapor discharge ports 7h ₁ and the vapor discharge ports of the adjacent host material vapor discharger 5h. It is preferable that the distances 7h ₂ and 7h ₃ are equal and arranged on concentric circles centering on the vapor discharge reference point O.
From the same viewpoint, the adjacent dopant material for a steam eductor 5d, the vapor discharge port 7d ₁ together, also equal spacing of the steam discharge opening 7d _2, 7d _3, and, around the vapor emission reference point O It is preferable to arrange them on concentric circles.

  On the other hand, as will be described below, the host material vapor discharger 5h is configured such that the vapor of the host material is introduced via the host material introduction unit 8h, and the dopant material vapor discharger 5d is formed of the dopant material. The vapor of the dopant material is introduced through the introduction part 9d.

As shown in FIG. 1B, the host material introduction portion 8h of the host material vapor discharger 5h has a cylindrical shape, for example, a cross-sectional ring shape extending in the vertical direction around the vertical line segment L passing through the vapor discharge reference point O. Vertical introduction part 8V.
A horizontal introduction portion 8H extending in the horizontal direction is connected to the lower end portion of the vertical introduction portion 8V, and the horizontal introduction portion 8H is connected to the evaporation container 30h of the host material vapor generation source 3h via a valve 33h. Has been.

The vertical introduction part 8V of the host material introduction part 8h is connected to each host material vapor discharger 5h via the vapor introduction port 10 at the upper end part.
On the other hand, the dopant material introduction section 9d of the dopant material vapor emitter 5d has a pipe-shaped vertical introduction section 9V extending in the vertical direction on the vertical line segment L passing through the vapor emission reference point O.

A horizontal introduction portion 9H extending in the horizontal direction is connected to the lower end portion of the vertical introduction portion 9V, and the horizontal introduction portion 9H is connected to the evaporation container 30d of the dopant material vapor generation source 3d via a valve 33d. ing.
The vertical introduction part 9V of the dopant material introduction part 9d is connected to each dopant material vapor discharger 5d via the vapor introduction chamber 11 and the vapor introduction port 12 at the upper end thereof.

  A vapor discharge nozzle 13h having a small conductance is provided in the vicinity of the front end portion of the horizontal introduction portion 8H of the host material introduction portion 8h. The amount of vapor of the organic material emitted from the vapor discharge nozzle 13h is determined by the film thickness sensor 14h. Is configured to measure by.

  Also, a vapor discharge nozzle 13d having a small conductance is provided in the vicinity of the tip of the horizontal introduction portion 9H of the dopant material introduction portion, and the amount of vapor of the organic material emitted from the vapor discharge nozzle 13d is measured by the film thickness sensor 14d. It is configured to measure.

  The host material vapor discharger 5h and the host material introduction unit 8h, and the dopant material vapor release unit 5d and the dopant material introduction unit 9d are controlled to a predetermined temperature by heating and cooling means (not shown), respectively. Heat is not transmitted to each other by a heat insulating member (not shown).

  In the present embodiment having such a configuration, when an organic material film is deposited on the substrate 15, the vapor generation source 3h for the host material is used with the pressure in the vacuum chamber kept at a predetermined pressure. The vapor of the host material is introduced into the vapor discharger 5h for host material through the host material introduction unit 8h.

Further, the dopant material vapor is introduced from the dopant material vapor generation source 3d into the dopant material vapor discharger 5d through the dopant material introduction portion 9d.
As a result, the vapor of the host material is discharged in a plane from the vapor discharge port 7h of the vapor discharge port 5h for the host material toward the substrate 15, and the dopant material is discharged from the vapor discharge port 7d of the vapor discharge device 5d for the dopant material. Vapor is released in a plane toward the substrate 15, and a co-deposited film of the host material and the dopant material is formed on the entire surface of the substrate 15.

  As described above, in the present embodiment, the host material vapor discharger 5h and the dopant material vapor discharger 5d are arranged radially with the vapor discharge reference point O as the center and at a distance from the vapor discharge reference point O. Since it has a plurality of vapor discharge ports 7h, 7d configured to increase the amount of the organic material vapor released accordingly, the host material vapor dopant 5h and the dopant material vapor emitter 5d are used as the host material and dopant. By releasing the material vapor in a planar shape, a film having a uniform film thickness and film quality can be formed on the substrate 15 at a high speed without rotating the substrate 15.

  In addition, according to the present embodiment, the host material vapor emitter 5h and the dopant material vapor emitter 5d and the dopant material vapor emitter 5d are isolated from each other. There is no possibility that the vessel 5d is contaminated with each other.

  Further, in the present embodiment, since the host material vapor discharger 5h and the dopant material vapor discharger 5d are alternately arranged with respect to the circumferential direction around the vapor discharge reference point O, the vapor discharger unit. Since the vapor of the host material and the dopant material can be sufficiently mixed between the substrate 2 and the substrate 15, the uniformity of the film thickness and film quality of the co-deposited film can be further increased.

  Furthermore, in the present embodiment, the vapor discharge ports 7h, 7d of the vapor discharge device 5h for the host material and the vapor discharge device 5d for the dopant material are arranged concentrically around the vapor discharge reference point O. The uniformity of film thickness and film quality on the substrate 15 can be further increased.

  In addition, in this embodiment, the host material vapor generation source 3h and the dopant material vapor generation source 3d, the host material introduction unit 8h and the dopant material introduction unit 9d, the host material vapor release unit 5h, and the dopant material vapor emission. When the vessel 5d is configured to independently control the temperature and has a heat insulating structure that prevents heat transfer between the two, a host material and a dopant material having a large evaporation temperature difference are used as the evaporation material. Even in the host material vapor generation source 3h and the dopant material vapor generation source 3d, the host material introduction unit 8h and the dopant material introduction unit 9d, the host material vapor release unit 5h, and the dopant material vapor release unit 5d. The decomposition of the evaporation material having the lower evaporation temperature can be prevented.

Moreover, according to this Embodiment, since it is not necessary to move the board | substrate 15, a vapor deposition apparatus with a simple structure can be provided.
3 and 4 are plan views showing other examples of the steam discharger according to the present invention. In the following, the same reference numerals are given to the portions corresponding to the above embodiment, and the detailed description thereof is omitted. .

As shown in FIG. 3, the vapor discharger unit 2A of this example is different from the above embodiment in the shapes of vapor discharge ports 70h and 70d of the vapor discharger 5h for the host material and the vapor discharger 5d for the dopant material. Arc-shaped steam discharge ports 70h and 70d are provided on the discharge surfaces 6h and 6d.
As shown in FIG. 4, the steam discharge ports 70 h of this example are disposed on concentric circles C _{1 to} C ₆ centering on the above-described steam discharge reference point O, for example.

In the case of the present invention, there is no particular limitation, but from the viewpoint of more uniformly releasing the vapor of the organic material, the intervals between the vapor discharge ports 70h are equal in the adjacent host material vapor discharger 5h. It is preferable to configure.
Furthermore, from the same viewpoint, the adjacent dopant material for a steam eductor 5d, it is preferable to configure such that the distance of the steam outlet 70d the mechanic equal.

  According to the present embodiment having such a configuration, in addition to the same effects as the above-described embodiment, the uniformity of film thickness and film quality on a large circular or ring-shaped substrate can be further improved. Thus, for example, an organic EL illumination flat lamp that emits light with a uniform in-plane distribution can be provided.

Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.
FIG. 5A is a schematic plan view of a vapor discharger according to another embodiment of the vapor deposition apparatus according to the present invention, and FIG. 5B is a cross-sectional view taken along line BB of the vapor discharger of FIG. FIG.
Hereinafter, parts corresponding to those in the above embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIGS. 5 (a) and 5 (b), in the case of the present embodiment, the host material introduction portion 8h of the host material vapor discharger 5h is vertical around the vertical line segment L passing through the vapor discharge reference point O. For example, it has a cylindrical vertical introduction portion 8V having a ring-shaped cross section extending in the direction, and this vertical introduction portion 8V is connected to the evaporation container 30h of the host material vapor generation source 3h via a valve 33h.

Then, for example, a hollow disk-shaped horizontal introduction portion 8H is connected to the upper end portion of the vertical introduction portion 8V of the host material introduction portion 8h.
A plurality of (six in this embodiment) steam discharge nozzles 40h, 41h, 42h, 43h, and 44h arranged radially, for example, at an equal angle with the steam discharge reference point O as the center on the upper surface of the vertical introduction portion 8V. And 45h are provided in a plurality of sets (eight sets in this embodiment).

Vapor discharge ports 50h, 51h, 52h, 53h, 54h and 55h are provided above the vapor discharge nozzles 40h, 41h, 42h, 43h, 44h and 45h, respectively.
Here, the vapor discharge ports 50h to 55h are formed so that the diameter of the nozzle increases in accordance with the distance from the vapor discharge reference point O, and thereby the vapor of the organic material according to the distance from the vapor discharge reference point O. The amount of release is increased.

  On the other hand, the dopant material introduction part 9d of the dopant material vapor discharger 5d has a pipe-like vertical introduction part 9V extending in the vertical direction on the vertical line segment L passing through the vapor emission reference point O, and this vertical introduction part 9V. Is connected to the evaporation vessel 30d of the dopant material vapor generation source 3d through a valve 33d.

  At the upper end portion of the vertical introduction portion 9V of the dopant material introduction portion 9d, for example, a plurality (eight in this embodiment) of horizontal introduction portions 9H extending radially at, for example, the same angle around the vapor emission reference point O are provided. A plurality (six in this embodiment) of steam discharge nozzles 40d, 41d, 42d, 43d, 44d, and 45d that are connected and arranged radially around the steam discharge reference point O on the upper surface of each horizontal introduction portion 9H. Is provided.

Vapor discharge ports 50d, 51d, 52d, 53d, 54d and 55d are provided above the vapor discharge nozzles 40d, 41d, 42d, 43d, 44d and 45d, respectively.
Here, the vapor discharge ports 50d to 55d are formed so that the diameter of the nozzle increases in accordance with the distance from the vapor discharge reference point O, whereby the vapor of the organic material according to the distance from the vapor discharge reference point O. The amount of release is increased.

  In the present embodiment, the horizontal introduction part 9H of the dopant material introduction part 9d is provided above the horizontal introduction part 8H of the host material introduction part 8h. And these vapor | steam discharge nozzles 40h-45h and 40d-45d are comprised so that it may become the same, Thereby, the vapor | steam discharge ports 50h-55h and 50d-55d are provided so that it may be located in the same plane. .

  Further, the steam discharge ports 50h to 55h and the vapor discharge ports 50d to 55d described above are alternately arranged with respect to the circumferential direction with the vapor discharge reference point as the center. Further, regarding the steam outlets 50h to 55h and the steam outlets 50d to 55d, the corresponding steam outlets 50h and 50d, 51h and 51d, 52h and 52d, 53h and 53d, 54h and 54d, 55h and 55d They are arranged on concentric circles centered on the reference point O.

According to this embodiment having such a configuration, in addition to the same effects as those of the above-described embodiment, the uniformity of film thickness and film quality on a large circular or ring-shaped substrate can be further improved.
Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, the number of steam dischargers in the steam discharger unit is not limited to that in the above-described embodiment, and can be changed as appropriate.

  In the above embodiment, the case where the host material and the dopant material of the organic layer of the organic EL device are deposited has been described as an example. However, the present invention is not limited to this, and for example, three or more via a switching valve. It is also possible to connect the vapor generating source to the vapor discharge unit and supply vapor of various organic materials to the vapor discharge unit by switching the switching valve.

  Further, in the above-described embodiment, vapor deposition is performed on the substrate by discharging vapor from the lower side of the substrate, which is the film formation target. However, the present invention is not limited to this, and is inclined with respect to the vertical direction. It is also possible to discharge the vapor to the substrate, or to discharge the vapor from above to the substrate arranged in the horizontal direction so as to perform so-called deposition down film formation.

Furthermore, the present invention can also be applied to an apparatus for performing vapor deposition polymerization using a plurality of raw material monomers.
In addition, the present invention can be applied not only to organic materials but also to inorganic materials such as lithium fluoride (LiF) and molybdenum trioxide (MoO ₃ ).

DESCRIPTION OF SYMBOLS 1 ... Vapor deposition apparatus 2 ... Vapor discharger unit 3h ... Vapor generation source (vapor generation source) for host materials
3d ... Dopant material vapor generation source (vapor generation source)
5h ... Vapor discharger for host material (first vapor discharger)
5d ... Dopant material vapor discharger (second vapor discharger)
7h, 7d ... Vapor discharge port 8h ... Host material introduction part 9d ... Dopant material introduction part 15 ... Substrate (film formation target)

Claims (6)

A vacuum chamber in which an object to be deposited is placed;
A plurality of vapor generating source for generating the vapor of the evaporation materials provided outside the vacuum chamber,
A vapor discharge unit having a plurality of vapor discharge units that are isolated from each other and discharge the vapor of the evaporation material supplied from the plurality of vapor generation sources in a plane toward the film formation target. ,
A plurality of vapor discharge units of the vapor discharge unit are arranged radially with a vapor discharge reference point serving as a reference when releasing the vapor of the evaporation material as a center, and the evaporation according to the distance from the vapor discharge reference point have a plurality of steam outlet configured so that the amount of discharge of the vapor of the material is increased,
The plurality of vapor dischargers each have a plurality of vapor discharge devices for a plurality of different materials to which vapors of different types of evaporation materials are supplied from the plurality of vapor generation sources,
Among the plurality of steam dischargers, the plurality of steam dischargers to which the vapor of the same type of evaporation material is supplied have the same interval between the steam discharge ports of the adjacent steam dischargers, and the vapor discharge reference point is the center. A vapor deposition device arranged on concentric circles .   The vapor deposition apparatus according to claim 1, wherein the vapor discharge unit has first and second vapor discharge units that are alternately arranged in a circumferential direction around the vapor discharge reference point. The plurality of steam generating sources, the steam introducing means for introducing the vapor of the evaporation material from the plurality of steam generating sources to the plurality of steam dischargers, and the plurality of steam dischargers each independently control the temperature. while being configured to, vapor deposition apparatus of any one of claims 1 or 2 has a heat insulating structure to prevent heat transfer from one another. The vapor deposition apparatus according to any one of claims 1 to 3 , wherein the vapor discharge ports of the plurality of vapor dischargers are formed in an arc shape. A method of forming an organic film on a substrate surface in a vacuum using the vapor deposition apparatus according to any one of claims 1 to 4 ,
A vapor deposition method using a host material and a dopant material for forming an organic thin film layer of an organic EL device as an evaporation material. A method of forming a film on a substrate surface in a vacuum using the vapor deposition apparatus according to any one of claims 1 to 4 ,
A vapor deposition method using lithium fluoride or molybdenum trioxide as an evaporation material.

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