KR20160005875A - Thin Film Deposition Apparatus with Evaporation Source Installed Multi-Crucible - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus and comprises: a deposition chamber wherein a substrate is supported; a plurality of crucibles storing a deposition material to be deposited to the substrate; a plurality of distribution pipes coupled with each crucible to be arranged in a line to inject the vaporized deposition material through a plurality of nozzles; a distribution pipe heater independently installed to be positioned to face an outer surface of the distribution pipe to heat the distribution pipe; a crucible heater heating the crucible to vaporize the deposition material; and an upper plate having an outlet corresponding to the nozzle to be installed in an upper portion of the distribution pipe. Therefore, the present invention can reduce height of the crucible to reduce the height of the chamber and independently perform left and right deposition of the substrate to be symmetrically or asymmetrically deposited.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a thin film deposition apparatus having an evaporation source equipped with a plurality of crucibles,

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus capable of reducing a height of a crucible by reducing a height of a chamber, independently and independently depositing a substrate on the left and right sides, To a thin film deposition apparatus.

The deposition process is widely used for the fabrication of semiconductor devices and flat panel display devices. In order to coat a substrate with a deposition material used for manufacturing semiconductor devices and flat panel display devices, a crucible containing a deposition material is heated The deposition material is evaporated from the surface to evaporate the organic material onto the substrate in the high vacuum chamber.

In general, a thin film deposition apparatus includes a vacuum chamber, a substrate support provided in the chamber to support a substrate, and a distribution pipe arranged to face the substrate support to evaporate the source material to supply the substrate.

In the case of the upward deposition method, the distribution pipe is provided in the lower part of the chamber. Specifically, the distribution pipe is disposed so as to face the one surface of the substrate on which the thin film is to be deposited so as to uniformly distribute the raw material evaporated on one surface of the substrate by a plurality of paths It serves as a supplier.

Korean Patent No. 10-1057552 filed and filed by the applicant of the present invention discloses a conventional distribution pipe. The conventional distribution pipe has a cylindrical shape, and a crucible in which a deposition material is accommodated in the central portion of the distribution pipe is connected And a heater for heating the distribution pipe.

Since the distribution pipe is connected to the crucible through a central portion of the distribution pipe, the overall shape of the pipe is 'T'. The heater is configured to wind the outer circumferential surface of the distribution pipe to heat the raw material passing through the distribution pipe Structure.

In such a conventional technique, since the crucible is coupled to the central portion of the distribution pipe to supply the deposition material through a single crucible, the size of the crucible must be increased to supply a large amount of the deposition material.

2. Description of the Related Art In recent years, a substrate has gradually become larger and larger. In the case of a flat panel display device, a vapor deposition apparatus capable of manufacturing a large-sized substrate is required for enlarging a TV screen and improving productivity. The development of an evaporation source for manufacturing a large-area substrate is the most important problem.

In order to constitute an evaporation source for manufacturing a large area substrate, the capacity of the crucible for containing the deposition material must be increased. However, if the length of the crucible is increased to increase the capacity of the crucible, the height of the chamber also increases. There is an increased disadvantage.

In addition, since the heater is wound around the outer circumferential surface of the distribution pipe and is directly coupled, it is necessary to disassemble the heater in order to replace the evaporation source.

Korean Patent No. 10-1057552

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a crucible which can reduce the length of a crucible and reduce the height of a chamber, The present invention has been made in view of the above problems.

It is also an object of the present invention to provide a thin film deposition apparatus capable of independently and symmetrically or asymmetrically depositing on a substrate the control of the deposition material supplied through each crucible.

It is also an object of the present invention to provide a thin film deposition apparatus which can independently constitute a heater for heating a crucible and a distribution pipe to easily separate the source and the sinker in the upward direction, and to reduce space and space in the lower portion of the chamber.

Another object of the present invention is to provide a thin film deposition apparatus in which a heater is installed on both sides of a distribution pipe, thereby facilitating the replacement and disassembly of the heater when a component fails.

According to an aspect of the present invention, there is provided a deposition apparatus including: a deposition chamber in which a substrate is supported; a plurality of crucibles containing an evaporation material for deposition on the substrate; Wherein the plurality of crucibles are arranged in a row along the tube axis and spray the evaporation material evaporated from the plurality of crucibles through a plurality of nozzles formed on the crucibles to face the outer surface of the distribution tube to heat the distribution tube A crucible heater for heating the crucible to vaporize the evaporation material and an upper plate having an outlet corresponding to the nozzle and installed on the upper portion of the distribution pipe, Is provided.

The distribution pipe heater may be formed of a sheath heater having a cross-sectional shape of 'B' shape to heat the side and bottom of the distribution pipe.

In this case, the distribution pipe heater may be installed on both sides of the distribution pipe.

On the other hand, the upper plate is openable and closable, so that when the upper plate is opened, the distribution pipe can be separated upward and replaced.

In the present invention, the upper plate may be opened and closed in a sliding manner.

In addition, a reflector may be installed on the bottom surface of the upper plate so as to face the upper surface of the distribution pipe, and to reflect the heat of the distribution pipe heater and to heat the same.

The reflector may be provided in multiple layers for efficient reflection of heat.

In the present invention, a plurality of distribution tubes may be installed in the deposition chamber.

In this case, it is preferable that the nozzles of the distribution tubes located at the edges of the plurality of distribution tubes are formed to extend in the tangential direction of the distribution tube so as to have a position adjacent to the center of the deposition chamber.

According to the present invention as described above, the thin film deposition apparatus of the present invention can significantly reduce the length of the crucible even when the same amount of material is deposited, thereby reducing the chamber height and reducing the manufacturing cost of the apparatus.

Considering the desorption height of the crucible, it is possible to reduce the height twice as compared with the conventional technology having a single crucible.

In addition, symmetrical or asymmetric deposition is possible by independently controlling the left / right control of the substrate. In general, the nozzle cap is changed in order to adjust the amount of the evaporation material to be sprayed onto the substrate. However, there is a disadvantage that the process time is long, such as stopping the process, changing the nozzle cap, According to the present invention, it is not necessary to independently control the thickness of the left / right thin film of the substrate to change the nozzle cap, thereby reducing the processing time.

Further, the heater for heating the crucible and the distribution pipe are independently constituted, and the desorption of the source can be easily separated in the upward direction, thereby reducing the space in the lower part and ensuring space.

1 is a cross-sectional view showing a main structure of a thin film deposition apparatus of the present invention.
Fig. 2 is a side sectional view in Fig. 1; Fig.
FIG. 3 is a plan view showing an embodiment to which the thin film deposition apparatus of the present invention is applied.
4 is a cross-sectional view taken along line AA in Fig.
5 is a sectional view taken along line BB of Fig.
Fig. 6 is an enlarged cross-sectional view of the distribution pipe in Fig. 5;
7 is a cross-sectional view conceptually showing a deposition layer deposited on a substrate through the thin film deposition apparatus of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. The structure and operation of the present invention shown in the drawings and described by the drawings are described as at least one embodiment, and the technical ideas and the core structure and operation of the present invention are not limited thereby.

FIG. 1 is a sectional view showing a main structure of a thin film deposition apparatus of the present invention, and FIG. 2 is a side sectional view in FIG. 1.

The thin film deposition apparatus according to the present invention roughly comprises a deposition chamber (not shown), a crucible 10 in which an evaporation material is contained, a distribution pipe 20 for spraying an evaporation material vaporized from the crucible 10 onto a substrate, A heater 30 for heating the distribution pipe 20 and the crucible 10 to vaporize the evaporation material and an upper plate 50 installed at an upper portion of the distribution pipe 20.

The deposition chamber provides a predetermined reaction space for processing the substrate, and may be formed in a shape corresponding to the shape of the substrate. For example, cylindrical or rectangular box shape. In addition, a gate (not shown) for entering and exiting the substrate and an exhaust unit (not shown) for internal exhaust may be provided at one side of the chamber.

Meanwhile, the crucible 10 accommodates an evaporation material for evaporation on a substrate and is heated by the heater 40 to evaporate the evaporation material. The furnace 10 is made of a heat resistant container, and the heated evaporation material can be discharged to the outside One side is opened.

In the present invention, a plurality of such crucibles 10 are provided and arranged in parallel. That is, the plurality of crucibles 10 are arranged side-by-side in a state of being open toward the upper side in Fig. 1 and Fig.

The plurality of crucibles 10 are provided to communicate with the distribution pipe 20 so that the distribution pipe 20 has a plurality of engagement openings 22 communicating with the crucible 10, respectively.

As shown in FIGS. 1 and 2, the coupling openings 22 are arranged in a line along the tube axis in the lengthwise direction of the distributor tube 20.

In the prior art, the distribution pipe is connected to a single crucible through a central portion to form a T shape. In the present invention, however, the distribution pipe 20 is provided with a plurality of crucibles 10 22) are formed in plural and have the shape of "┌".

The thin film deposition apparatus according to the present invention includes a plurality of crucibles 10 so that the length of the crucible 10 can be greatly reduced even if the same amount of material is deposited and the chamber height can be reduced, .

Considering the desorption height of the crucible, it is possible to reduce the height twice as compared with the conventional technology having a single crucible.

In the embodiment of the present invention, two coupling ports 22 are formed, but the present invention is not limited thereto. The number of coupling ports 22 may be three or more depending on the size of the substrate, the number of materials to be deposited, Or more.

In this case, it is preferable that the coupling ports 22 are formed symmetrically with respect to the center line of the substrate, that is, the center of the distribution pipe 20, or are formed at regular intervals. This is for the uniformity of the deposited film deposited on the substrate. The position and spacing of the coupling openings 22 are not limited to the present invention, and may be variously adapted to the purpose of the film formation.

Meanwhile, the distribution pipe 20 to which the plurality of crucibles 10 are mounted can be symmetrically or asymmetrically deposited independently of the left / right control of the substrate. In this case, since each crucible 10 influences the vapor deposition thickness on the left and right sides of the substrate, it is necessary to predict and control the vapor deposition thickness, and asymmetric vapor deposition as well as left / There is no need to change the nozzle cap separately.

In general, the nozzle cap is changed in order to adjust the amount of the evaporation material to be sprayed onto the substrate. However, there is a disadvantage that the process time is long, such as stopping the process, changing the nozzle cap, According to the present invention, it is not necessary to independently control the thickness of the left / right thin film of the substrate to change the nozzle cap, thereby reducing the processing time.

On the other hand, a plurality of nozzles 24 are formed on the upper portion of the distribution pipe 20, and the evaporation material vaporized from the plurality of crucibles 10 is injected through a plurality of nozzles 24 formed on the upper part.

The heater 30 includes a crucible heater 40 for heating the crucible 10 so that the evaporation material contained in the crucible 10 is evaporated and a heater 40 for heating the evaporation material 20 And a distribution pipe heater 30 for vaporizing. The distribution pipe heater 30 and the crucible heater 40 may be formed integrally with each other. In the present invention, for the sake of convenience, the heater for heating the distribution pipe 20 is referred to as a distribution pipe heater 30, and the heater for heating the crucible 10 is referred to as a crucible heater 40, which will be described below.

The distribution pipe heater 30 and the crucible heater 40 are independently installed to face the outer surface of the distribution pipe 20 and the crucible 10, respectively.

The distribution pipe heater 30 and the crucible heater 40 may be made of a sheath heater including a heating block and a hot wire. That is, a heat wire is installed inside the heating block and is heated by a power source supplied from the outside to heat the distribution pipe 20 and the crucible 10.

In the present invention, the distribution pipe heater 30 may be made of a sheath heater having a cross-sectional shape of 'B' shape as shown in FIG. 2 so as to heat the side surface and the bottom surface of the distribution pipe 20 have.

In this case, the distribution pipe heater 30 is installed on both sides of the distribution pipe 20 to heat the distribution pipe 20 evenly as shown in FIG.

The crucible heater 30 may be disposed outside the crucible 10 so as to surround the crucible 10.

The crucible heater (30) is provided in plural and is installed to heat each crucible (10).

That is, in the plurality of crucibles 10, different types of organic substances may be heated and vaporized or sublimated in a vapor phase, or the same kind of organic substances may be heated and vaporized or sublimated in a vapor phase.

Each of the crucibles 10 is provided with a crucible heater 30 for heating organic materials. When different kinds of organic materials are heated and vaporized or sublimated in a vapor phase, the crucible heater 30 is operated at different temperatures . For example, host organics and dopant organic substances having vaporization points different from each other are heated to an optimum temperature so that HOST organic substances are vaporized in one crucible 10 and DOPANT organic substances are vaporized in another crucible 10 By controlling the diffusion rate of the two vaporized organic materials, the deposition can be performed at a desired concentration on the substrate.

Meanwhile, in the present invention, the upper plate 50 is installed on the upper portion of the distribution pipe 20. A discharge port 52 corresponding to the nozzle 24 is formed in the upper plate 50 so that vaporized vaporized material in the distribution pipe 20 can be sprayed onto the substrate.

The upper plate 50 may be installed to be openable and closable. That is, the upper plate 50 may be opened to separate and replace the distribution pipe 20 in the upward direction. In the present invention, since the crucible 10 and the heaters 30 and 40 for heating the distribution pipe 20 are independently constructed, when the source is to be replaced, the source is detached without disassembling the heaters 30 and 40 And opening the top plate 50 allows the source to be easily separated upward.

In the present invention, the upper plate 50 may be configured to be opened and closed in a sliding manner. For example, it is possible to open and close the upper plate 50 in a sliding manner by laying a roller on the side surface of the upper plate 50 and constituting a transportable rail by inserting the roller. However, the present invention is not limited thereto, and the manner and structure for opening and closing the upper plate 50 may be configured by applying a known technique.

A reflector 60 is provided on the bottom surface of the upper plate 50 so as to face the upper surface of the distribution pipe 20 and reflect the heat of the distribution pipe heater 30 for heating . Since the distribution pipe heater 30 of the present invention is formed in the shape of a letter "B" to heat the side and bottom surfaces of the distribution pipe 20, in order to reinforce the upper surface of the distribution pipe 20, A reflector 60 is installed on the bottom surface of the upper plate 50 to reflect heat of the distribution pipe heater 30 and to heat the pipe.

In this case, the reflector 60 may be provided in a plurality of layers in order to efficiently reflect heat.

The present invention having the distribution pipe heater 30 and the reflector 60 constitutes a heating zone for heating the distribution pipe 20 and is used for heating the evaporation material evaporated through the distribution pipe 20 Ensure vaporization is stable.

3 is a cross-sectional view taken along line A-A of FIG. 3, and FIG. 5 is a cross-sectional view taken along line B-B of FIG. 3.

As shown in FIG. 3, in the thin film deposition apparatus of the present invention, a plurality of the distribution tubes 20, 20a and 20b may be installed in one deposition chamber. In the thin film deposition apparatus shown in the embodiment of the present invention, three distribution tubes 20, 20a and 20b are provided, but the present invention is not limited thereto. If necessary, the number of distribution tubes may be adjusted Of course.

As described above, the thin film deposition apparatus is provided such that a plurality of crucibles 10 are communicated with each of the distribution pipes 20, 20a and 20b. In the case where two crucibles 10 are installed on the three distribution pipes 20, 20a, and 20b shown in the embodiment, a total of six crucibles 10 are installed.

An upper plate 50 is installed on the upper portion of the distribution pipe 20. The upper plate 50 is provided with sliding rails 70 on both sides thereof and is slidably installed through rollers 54 connected to the upper plate 50.

Accordingly, the upper plate 50 can be opened and closed in a sliding manner, so that the distribution pipe 20 can be separated upward.

Sensors 80 may be provided on both sides of the distribution pipe 20 in the longitudinal direction to sense the amount of the evaporation material and sense the thickness of the evaporation material.

FIG. 6 is an enlarged cross-sectional view of the distribution pipe in FIG. 5. In the case where a plurality of distribution pipes 20, 20a, 20b are provided, a distribution pipe 20a The nozzles 24a and 24b of the deposition tubes 20a and 20b may extend in the tangential direction of the distribution tubes 20a and 20b so as to have a position adjacent to the center of the deposition chamber.

5, the nozzle 24b is extended in the left tangential direction of the distribution pipe 20b so as to have a position adjacent to the center of the deposition chamber 20b The distribution tube 20a disposed on the left side in FIG. 5 is formed to extend in the right tangential direction of the distribution tube 20a such that the nozzle 24a has a position adjacent to the center of the deposition chamber .

FIG. 7 is a cross-sectional view conceptually showing a deposition layer deposited on a substrate through the thin film deposition apparatus of the present invention. The thin film deposition apparatus of the present invention evaporates an evaporation material through a plurality of crucibles 10, It is possible to independently control the thickness of the deposition film deposited on the left / right of the substrate S by individually controlling the substrate 10 so that symmetric or asymmetric deposition is possible.

The above description is only illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. It should be noted that the embodiments disclosed in the present invention are not intended to limit the scope of the present invention and are not intended to limit the scope of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

10: crucible 20: minute piping
22: Coupling port 24: Nozzle
30: a pipe heater 40: a crucible heater
50: upper plate 52: outlet

Claims (9)

A deposition chamber in which a substrate is supported;
A plurality of crucibles containing an evaporation material for deposition on the substrate;
A plurality of crucibles connected to the plurality of crucibles, a plurality of crucibles communicating with the crucibles, a plurality of crucibles communicating with the plurality of crucibles, a plurality of crucibles connected to the plurality of crucibles,
A distribution pipe heater independently installed to face the outer surface of the distribution pipe to heat the distribution pipe;
A crucible heater for heating the crucible to vaporize the evaporation material; And
An upper plate having a discharge port corresponding to the nozzle and installed at an upper portion of the distribution pipe;
And a thin film deposition apparatus. The method according to claim 1,
Wherein the distribution pipe heater is a sheath heater having a cross-sectional shape of 'B' so as to heat the side and bottom of the distribution pipe. The method of claim 2,
Wherein the distribution pipe heater is installed on both sides of the distribution pipe. The method according to claim 1,
Wherein the upper plate is openable and closable, so that when the upper plate is opened, the distribution pipe can be separated upward for replacement. The method of claim 4,
Wherein the upper plate is opened and closed in a sliding manner. The method according to claim 1,
Wherein a reflector is installed on a bottom surface of the upper plate so as to face the upper surface of the distribution pipe and reflect heat of the distribution pipe heater to heat the same. The method of claim 6,
Wherein the reflector is provided in a plurality of layers. The method according to claim 1,
Wherein a plurality of the distribution tubes are installed in the deposition chamber. The method of claim 8,
Wherein the nozzles of the distribution tubes located at the edges of the plurality of distribution tubes are formed to extend in the tangential direction of the distribution tube so as to have a position adjacent to the center of the deposition chamber.

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