WO2012077163A1 - シリコン酸窒化膜及びその形成方法並びに半導体デバイス - Google Patents
シリコン酸窒化膜及びその形成方法並びに半導体デバイス Download PDFInfo
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- silicon oxynitride
- silicon
- oxynitride film
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 91
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 20
- 239000007789 gas Substances 0.000 claims abstract description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 34
- 239000011737 fluorine Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 9
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000001939 inductive effect Effects 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 139
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 4
- 239000007858 starting material Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 20
- 239000004020 conductor Substances 0.000 description 10
- 230000002411 adverse Effects 0.000 description 7
- 125000001153 fluoro group Chemical group F* 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 150000003376 silicon Chemical class 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Definitions
- the present invention relates to a silicon oxynitride film used for semiconductor devices such as thin film transistors and MOS transistors, and a method for forming the same. Furthermore, the present invention relates to a semiconductor device and an oxide semiconductor thin film transistor having the silicon oxynitride film.
- Non-Patent Document 1 discloses plasma CVD using an SiH 4 / N 2 O mixed gas in an oxide semiconductor thin film transistor (abbreviated as OTFT) in which a channel layer is formed of an In 2 -Ga 2 -Zn 0 (abbreviated as IGZO) oxide semiconductor.
- OTFT oxide semiconductor thin film transistor
- IGZO oxide semiconductor thin film transistor
- a silicon oxide film (SiO x film) is deposited as a protective film (passivation layer) (for example, see the left column on page 228, Table 1).
- This Non-Patent Document 1 assumes that hydrogen in a silicon oxide film used as a protective film is a cause of the shift of the threshold value V th , which is one of the reliability indicators of oxide semiconductor thin film transistors. (For example, see the left column on page 229).
- Patent Document 1 instead of SiH 4 gas, which is a conventional gas source, SiF 4 gas is used, O 2 gas is used as an oxidizing gas, and N 2 gas is used as a carry gas. Can form a silicon oxide film (SiO 2 film) containing no hydrogen (see, for example, paragraph 0009).
- Non-Patent Document 1 describes that hydrogen in a protective film adversely affects the characteristics of an oxide semiconductor thin film transistor.
- Patent Document 1 describes SiH 4 , which is a conventional gas source. Although a technique capable of forming a silicon oxide film containing no hydrogen by using SiF 4 gas in place of the gas is described, the technique described in Patent Document 1 still has a problem.
- an object of the present invention is to provide an insulating film that does not contain hydrogen and free fluorine and has good film characteristics.
- the silicon oxynitride film according to the present invention is a film containing silicon, nitrogen, oxygen and fluorine, and the element ratio (N + O + F) / total of nitrogen N, oxygen O and fluorine F (N + O + F) / silicon Si Si is in the range of 1.93 to 1.48, the silicon element ratio in the film is 0.34 to 0.41, the nitrogen element ratio is 0.10 to 0.22, and the oxygen element ratio is It is characterized in that the element ratio of 0.14 to 0.38 and fluorine is in the range of 0.17 to 0.24.
- This silicon oxynitride film does not contain hydrogen. Therefore, the problem that hydrogen in the film adversely affects the characteristics of the semiconductor device can be solved.
- this silicon oxynitride film does not contain free fluorine. Therefore, it is possible to solve the problem that free fluorine deteriorates the stability of the film quality and the film characteristics.
- this silicon oxynitride film has a high breakdown electric field strength, a low leakage current density, and is excellent as an insulating film.
- This silicon oxynitride film may be used for a semiconductor device. As a more specific example, it may be used for a gate insulating film, an etching stopper, a protective film, or the like of a thin film transistor using an oxide semiconductor.
- the silicon oxynitride film is formed on the substrate by, for example, inductively coupled plasma CVD using silicon tetrafluoride gas (SiF 4 ), nitrogen gas, and oxygen-containing gas as source gas and generating plasma by inductive coupling. You may form in.
- SiF 4 silicon tetrafluoride gas
- nitrogen gas nitrogen gas
- oxygen-containing gas oxygen-containing gas
- the silicon oxynitride film according to claim 1 does not contain hydrogen. Therefore, the problem that hydrogen in the film adversely affects the characteristics of the semiconductor device can be solved.
- this silicon oxynitride film does not contain free fluorine. Therefore, it is possible to solve the problem that free fluorine deteriorates the stability of the film quality and the film characteristics.
- the silicon oxynitride film has a high breakdown field strength and a low leakage current density, and is excellent as an insulating film.
- the silicon oxynitride film according to the first aspect is provided, a semiconductor device having good characteristics and good characteristic stability can be realized.
- the silicon oxynitride film described in claim 1 is used for at least one of the gate insulating film, the etching stopper, and the protective film, the characteristics are good and the characteristics are stable. A good oxide semiconductor thin film transistor can be realized.
- a silicon oxynitride film that does not contain hydrogen can be formed.
- silicon tetrafluoride gas (SiF 4 ) and nitrogen gas (N 2 ) are less susceptible to discharge decomposition than silane (SiH 4 ) and ammonia (NH 3 ), which are often used in the past, but they are inductively coupled.
- the type of plasma CVD method since a large induction electric field can be generated in the plasma, the silicon tetrafluoride gas and the nitrogen gas can be efficiently discharged and decomposed. As a result, high-density plasma can be generated, and the silicon oxynitride film can be formed efficiently.
- the fifth aspect of the present invention it is possible to form a silicon oxynitride film having good characteristics while suppressing adverse effects due to heat applied to the substrate and the film.
- FIG. 1 It is sectional drawing which shows an example of an inductive coupling type plasma CVD apparatus. It is a figure which shows an example of the relationship between an electric field strength and a current density of the silicon oxynitride film obtained by the film
- FIG. 10 is a cross-sectional view illustrating an example of a structure of a thin film transistor using an oxide semiconductor. It is a figure which shows an example of the infrared absorption spectrum of the silicon oxynitride film obtained by the film
- FIG. 1 shows an example of an inductively coupled plasma CVD apparatus for forming a film on a substrate by an inductively coupled plasma CVD method.
- This plasma CVD apparatus generates plasma 40 by an induced electric field generated by flowing a high-frequency current from a high-frequency power source 42 to a planar conductor 34, and forms a film on the substrate 20 using the plasma 40 by a plasma CVD method.
- This is an inductively coupled plasma CVD apparatus.
- the substrate 20 is, for example, a substrate 2 (see FIG. 7) to be described later, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, etc., but is not limited thereto. is not.
- a substrate 2 see FIG. 7 to be described later
- a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display
- a flexible substrate for a flexible display etc.
- This plasma CVD apparatus is provided with, for example, a metal vacuum vessel 22, and the inside thereof is evacuated by a evacuation apparatus 24.
- a raw material gas 28 corresponding to the processing content to be applied to the substrate 20 is introduced through a gas introduction pipe 26.
- a mixed gas of silicon tetrafluoride gas SiF 4 , nitrogen gas N 2 and oxygen-containing gas is introduced as the source gas 28.
- the oxygen-containing gas is, for example, oxygen gas O 2 , but may be nitrogen dioxide gas N 2 O or the like.
- a holder 30 for holding the substrate 20 is provided in the vacuum vessel 22.
- a heater 32 for heating the substrate 20 is provided in the holder 30.
- a planar conductor 34 having a rectangular planar shape is provided in the vacuum vessel 22, more specifically, inside the ceiling surface 23 of the vacuum vessel 22 so as to face the substrate holding surface of the holder 30.
- the planar shape of the planar conductor 34 may be a rectangle, a square, or the like.
- the specific shape of the planar shape may be determined according to the planar shape of the substrate 20, for example.
- High-frequency power is supplied from the high-frequency power source 42 via the matching circuit 44 and via the power supply electrode 36 and the termination electrode 38 between the power supply end on one end side in the longitudinal direction of the planar conductor 34 and the terminal end on the other end side. As a result, a high-frequency current flows through the planar conductor 34.
- the frequency of the high-frequency power output from the high-frequency power source 42 is, for example, a general 13.56 MHz, but is not limited to this.
- the power supply electrode 36 and the termination electrode 38 are attached to the ceiling surface 23 of the vacuum vessel 22 via insulating flanges 39, respectively. Between these elements, packings for vacuum sealing are provided.
- the upper portion of the ceiling surface 23 is preferably covered with a shield box 46 that prevents high-frequency leakage as in this example.
- a high-frequency magnetic field is generated around the planar conductor 34, thereby generating an induced electric field in the direction opposite to the high-frequency current. Due to this induced electric field, electrons are accelerated in the vacuum chamber 22 to ionize the gas 28 in the vicinity of the planar conductor 34, and plasma 40 is generated in the vicinity of the planar conductor 34.
- the plasma 40 diffuses to the vicinity of the substrate 20, and a film can be formed on the substrate 20 by the plasma CVD method using the plasma 40.
- silicon tetrafluoride gas SiF 4 , nitrogen gas N 2 and oxygen gas O 2 are used as source gas 28 on substrate 20.
- the temperature of the substrate 20 at this time is preferably in the range of 100 ° C. to 300 ° C.
- nitrogen dioxide gas N 2 O may be used instead of the oxygen gas O 2 .
- a silicon oxynitride film not containing hydrogen can be formed on the substrate 20.
- silicon tetrafluoride gas SiF 4 and nitrogen gas N 2 are less susceptible to discharge decomposition compared to silane SiH 4 and ammonia NH 3 which are often used in the past, according to the inductively coupled plasma CVD method, Since a large induction electric field can be generated in the plasma 40, the silicon tetrafluoride gas and the nitrogen gas can be efficiently discharged and decomposed. As a result, the high-density plasma 40 can be generated, and the silicon oxynitride film can be efficiently formed on the substrate 20.
- the temperature of the substrate 20 within the above range, it is possible to form a silicon oxynitride film having good characteristics while suppressing adverse effects due to heat applied to the substrate 20 and the film. More specifically, a silicon oxynitride film having excellent properties described later can be formed on the substrate 20.
- FIG. 1 An example of the relationship between the electric field strength and the current density of the silicon oxynitride film obtained by the film forming method is shown in FIG.
- the deposition conditions in this case are as follows: the substrate 20 is a silicon substrate, the temperature of the substrate 20 is 200 ° C., and the flow rates of the respective gases constituting the source gas 28 are 50 ccm for SiF 4 , 200 ccm for N 2 , and 10 ccm for O 2 . And the pressure in the vacuum vessel 22 was 0.67 Pa.
- MIS metal-silicon oxynitride film-semiconductor
- the breakdown electric field strength is defined as the electric field strength when the current density is 1 ⁇ 10 ⁇ 5 A / cm 2 , and the leakage current density. Is the current density when the electric field strength is 3 MV / cm.
- the breakdown electric field strength of the silicon oxynitride film obtained by the film forming method was about 10 MV / cm, and the leakage current density was about 1 ⁇ 10 ⁇ 8 A / cm 2 .
- the breakdown electric field strength of the conventional insulating film (SiN x or SiO 2 ) is at most 6 to 8 MV / cm, and a higher breakdown electric field strength is obtained.
- the leakage current density was comparable to that of the conventional insulating film.
- the breakdown electric field strength of the silicon oxynitride film formed by changing the flow rate conditions of the gases SiF 4 , N 2 , and O 2 constituting the source gas 28, the discharge power for plasma generation, and the gas pressure conditions in the vacuum vessel 22 An example of the relationship with the leakage current density is shown in FIG. It was confirmed that the silicon oxynitride film tends to improve (decrease) the leakage current density as the breakdown electric field strength improves (increases). This is considered due to the fact that there are few defects in the silicon oxynitride film. From this point of view, it can be said that this silicon oxynitride film is an insulating film having good characteristics.
- the composition of the silicon oxynitride film obtained by the above film formation method was evaluated using X-ray photoelectron spectroscopy (abbreviated as XPS). As a result, it was confirmed that the obtained film was composed of silicon Si, nitrogen N, oxygen O and fluorine F. Further, the presence or absence of hydrogen in the silicon oxynitride film was confirmed by Fourier transform infrared spectroscopy (abbreviation FT-IR). The result is shown in FIG.
- FT-IR Fourier transform infrared spectroscopy
- FIG. 4 shows an example of the relationship between the breakdown electric field strength and the constituent element ratio when the constituent element ratio of the silicon oxynitride film obtained by the film forming method is changed.
- the constituent element ratio was determined from the area of the peak waveform of the signal corresponding to each element obtained by XPS.
- high attached after each element symbol indicates a case where the breakdown electric field strength is 7 MV / cm or more, and low indicates a case where it is less than 7 MV / cm.
- the element ratio of silicon Si in the silicon oxynitride film is 0.34 to 0.41
- the element ratio of nitrogen N is 0.10 to 0.22
- the element ratio of oxygen O is
- a high breakdown electric field strength of 7 MV / cm or more (more specifically, about 8 MV / cm or more) is obtained. It was confirmed that it was obtained. That is, it was confirmed that a silicon oxynitride film having high insulation performance can be realized by using this composition.
- the silicon oxynitride film when it is considered that the silicon oxynitride film has a similar structure to the silicon oxide film, the silicon oxynitride film can be expressed as Si (O x N y F z ) R.
- the subscripts x, y, and z are the ratios of the constituent elements.
- the element ratio R (N + O + F) / Si of the total (N + O + F) of nitrogen N, oxygen O and fluorine F to silicon Si is in the range of 1.93 to 1.48, and the silicon Si in the film
- the element ratio is 0.34 to 0.41
- the nitrogen N element ratio is 0.10 to 0.22
- the oxygen O element ratio is 0.14 to 0.38
- the fluorine F element ratio is 0.17 to 0. It was confirmed that a high breakdown electric field strength of 7 MV / cm or more (more specifically, about 8 MV / cm or more) was obtained in the range of .24. That is, it was confirmed that a silicon oxynitride film having high insulation performance can be realized by using this composition.
- FIG. 1 An example of the XPS spectrum of the silicon oxynitride film obtained by the film forming method is shown in FIG.
- Si--F in FIG. 6 indicates that when the fluorine atom is bonded to the silicon atom, the electron bond energy of the fluorine atom has a bond energy of 685.5 eV or 687.6 eV.
- Si--F 2 indicates that the binding energy of electrons of fluorine atoms is 686.8 eV when two fluorine atoms are bonded to silicon even when bonding between silicon and fluorine.
- O-Si-F indicates that when silicon, oxygen, and fluorine are bonded, the electron bond energy of the fluorine atom has a bond energy of 686.8 eV or 690.5 eV.
- the bonding state corresponding to the energy of 686.8 eV indicates that there are cases of Si -F 2 and O -Si -F.
- the bond energy value of 689 eV indicates that it appears in the case of SiN (F) —O or C—F 2 bond.
- the SiN (F) -O notation indicates that fluorine is contained in the silicon oxynitride film, and that one atom and fluorine are bonded to the bond between silicon and nitrogen.
- C—F 2 indicates a case where a carbon atom and two fluorine atoms are bonded.
- FF indicates a structure in which fluorine atoms are bonded to each other. In this case, the bond energy is 696.7 eV.
- the silicon oxynitride film does not contain hydrogen as can be seen from FIGS. 4 and 5 and the description thereof. Therefore, the problem that hydrogen in the film adversely affects the characteristics of the semiconductor device can be solved.
- the silicon oxynitride film does not contain free fluorine as can be seen from FIG. 6 and the description thereof. Therefore, it is possible to solve the problem that free fluorine deteriorates the stability of the film quality and the film characteristics.
- the element ratio (N + O + F) / SiS of the sum of nitrogen N, oxygen O and fluorine F (N + O + F) / Si with respect to silicon Si is in the range of 1.93 to 1.48, and
- the silicon Si element ratio is 0.34 to 0.41
- the nitrogen N element ratio is 0.10 to 0.22
- the oxygen O element ratio is 0.14 to 0.38
- the fluorine F element ratio is 0.
- the silicon oxynitride film can be used as an insulating film or the like for semiconductor devices such as thin film transistors and MOS transistors.
- Such a semiconductor device is a semiconductor device having good characteristics and good characteristic stability because the silicon oxynitride film constituting the semiconductor device has the above-described features.
- the silicon oxynitride film can be used for a thin film transistor using an oxide semiconductor.
- An example of a structure of a thin film transistor using an oxide semiconductor is illustrated in FIG.
- This thin film transistor is an oxide semiconductor thin film transistor (abbreviated as OTFT) in which a channel layer is composed of In -Ga -Zn -O (abbreviated as IGZO) oxide semiconductor.
- An insulating film 6 is formed, and a semiconductor layer 8 made of In ⁇ -Ga -Zn -O is formed on the gate insulating film 6.
- a source electrode 10 and a drain electrode 12 are formed on the semiconductor layer 8 with a channel region interposed therebetween.
- An etching stopper 14 for stopping etching is formed on the channel region.
- a protective film 16 is formed on the source electrode 10, the drain electrode 12 and the etching stopper 14 to protect them.
- the hydrogen adversely affects the characteristics of the thin film transistor as described above.
- the silicon oxynitride film when used as at least one of the gate insulating film 6, the etching stopper 14, and the protective film 16, the silicon oxynitride film does not contain hydrogen, and thus has good characteristics and characteristics.
- a stable oxide semiconductor thin film transistor can be realized.
- the silicon oxynitride film according to the present invention can be used for semiconductor devices such as thin film transistors and MOS transistors, for example. More specifically, it can be used for a gate insulating film, an etching stopper, a protective film, and the like of a thin film transistor using an oxide semiconductor. Furthermore, such a semiconductor device can be used for displays such as a liquid crystal display and an organic EL display.
- Substrate 22 Vacuum container 28
Abstract
Description
SiF4 +O2 →SiO2 +2F2
22 真空容器
28 原料ガス
30 ホルダ
34 平面導体
40 プラズマ
42 高周波電源
Claims (5)
- シリコン、窒素、酸素およびフッ素を含んで成るシリコン酸窒化膜であって、
シリコンSi に対する、窒素N、酸素Oおよびフッ素Fの合計(N+O+F)の元素比率(N+O+F)/Si が1.93~1.48の範囲にあり、
かつ当該膜中のシリコンの元素比率が0.34~0.41、窒素の元素比率が0.10~0.22、酸素の元素比率が0.14~0.38およびフッ素の元素比率が0.17~0.24の範囲にある、ことを特徴とするシリコン酸窒化膜。 - 請求項1に記載のシリコン酸窒化膜を有している半導体デバイス。
- 酸化物半導体を用いた薄膜トランジスタであって、請求項1に記載のシリコン酸窒化膜を、ゲート絶縁膜、エッチングストッパおよび保護膜の少なくとも一つに用いている、ことを特徴とする薄膜トランジスタ。
- 原料ガスとして、四フッ化シリコンガス(SiF4 )、窒素ガスおよび酸素含有ガスを使用し、誘導結合によってプラズマを生成する誘導結合型のプラズマCVD法によって、請求項1に記載のシリコン酸窒化膜を基板上に形成する、ことを特徴とするシリコン酸窒化膜の形成方法。
- 膜形成時の前記基板の温度を100℃~300℃の範囲にする請求項4記載のシリコン酸窒化膜の形成方法。
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US13/823,108 US9058982B2 (en) | 2010-12-08 | 2010-12-08 | Silicon oxynitride film and method for forming same, and semiconductor device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5454727B1 (ja) * | 2013-07-10 | 2014-03-26 | 日新電機株式会社 | 薄膜トランジスタの作製方法 |
JP2016510171A (ja) * | 2013-03-01 | 2016-04-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 金属酸化物tftの安定性向上 |
JP2016072570A (ja) * | 2014-10-01 | 2016-05-09 | 東京エレクトロン株式会社 | 電子デバイス、その製造方法、及びその製造装置 |
JP2016082241A (ja) * | 2014-10-20 | 2016-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、ならびにモジュールおよび電子機器 |
KR20180077277A (ko) | 2015-12-08 | 2018-07-06 | 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠 | 박막 트랜지스터와 그 제조 방법 및 그 박막 트랜지스터를 갖는 반도체 장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101582838B1 (ko) * | 2013-08-23 | 2016-01-12 | 니신 일렉트릭 컴패니 리미티드 | 플라즈마 처리장치 |
JP5790893B1 (ja) * | 2015-02-13 | 2015-10-07 | 日新電機株式会社 | 膜形成方法および薄膜トランジスタの作製方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878408A (ja) * | 1994-09-08 | 1996-03-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH1012611A (ja) * | 1996-06-26 | 1998-01-16 | Sony Corp | 配線保護用パッシベーション膜、及び半導体装置の製造方法 |
JP2003060030A (ja) * | 2001-08-10 | 2003-02-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2009076886A (ja) * | 2007-08-24 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0529301A (ja) | 1991-07-23 | 1993-02-05 | Seiko Epson Corp | Cvd法 |
EP0723944A1 (en) * | 1995-01-26 | 1996-07-31 | Optical Coating Laboratory, Inc. | Wear resistant windows |
US6362114B1 (en) * | 1996-11-12 | 2002-03-26 | Micron Technology, Inc. | Semiconductor processing methods of forming an oxynitride film on a silicon substrate |
JPH10154712A (ja) * | 1996-11-25 | 1998-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
US6184158B1 (en) * | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
FR2759362B1 (fr) * | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
US5872065A (en) * | 1997-04-02 | 1999-02-16 | Applied Materials Inc. | Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry |
US6077764A (en) * | 1997-04-21 | 2000-06-20 | Applied Materials, Inc. | Process for depositing high deposition rate halogen-doped silicon oxide layer |
AU1197501A (en) * | 1999-11-30 | 2001-06-12 | Intel Corporation | Improved flourine doped sio2 film |
US6472336B1 (en) * | 2000-02-23 | 2002-10-29 | Advanced Micro Devices, Inc. | Forming an encapsulating layer after deposition of a dielectric comprised of corrosive material |
US6468927B1 (en) * | 2000-05-19 | 2002-10-22 | Applied Materials, Inc. | Method of depositing a nitrogen-doped FSG layer |
US7074489B2 (en) * | 2001-05-23 | 2006-07-11 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
JP3746968B2 (ja) * | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
US20070184181A1 (en) * | 2003-03-25 | 2007-08-09 | Kazuo Wada | Device and method for forming film for organic electro-luminescence element using inductive coupling CVD |
US7378157B2 (en) * | 2004-06-28 | 2008-05-27 | Dai Nippon Printing Co., Ltd. | Gas barrier film, and display substrate and display using the same |
US20060017166A1 (en) * | 2004-07-20 | 2006-01-26 | Po-Hsiung Leu | Robust fluorine containing Silica Glass (FSG) Film with less free fluorine |
US7037855B2 (en) * | 2004-08-31 | 2006-05-02 | Asm Japan K.K. | Method of forming fluorine-doped low-dielectric-constant insulating film |
US20060071301A1 (en) * | 2004-10-06 | 2006-04-06 | Luo Shing A | Silicon rich dielectric antireflective coating |
KR100669142B1 (ko) * | 2005-04-20 | 2007-01-15 | (주)더리즈 | 발광 소자와 이의 제조 방법 |
KR100700493B1 (ko) * | 2005-05-24 | 2007-03-28 | 삼성에스디아이 주식회사 | 효율적인 필라멘트 배열 구조를 갖는 촉매 강화 화학 기상증착 장치 |
JP4717674B2 (ja) * | 2006-03-27 | 2011-07-06 | 富士フイルム株式会社 | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
US20070299239A1 (en) * | 2006-06-27 | 2007-12-27 | Air Products And Chemicals, Inc. | Curing Dielectric Films Under A Reducing Atmosphere |
JP2008300779A (ja) * | 2007-06-04 | 2008-12-11 | Elpida Memory Inc | 半導体装置及びその製造方法 |
DE102008028141A1 (de) * | 2008-06-13 | 2009-12-17 | Audi Ag | Glasprodukt |
US8174021B2 (en) * | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
CN103730515B (zh) * | 2009-03-09 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件 |
-
2010
- 2010-12-08 JP JP2012547601A patent/JP5224012B2/ja active Active
- 2010-12-08 CN CN201080069030.8A patent/CN103098187B/zh active Active
- 2010-12-08 KR KR1020137003191A patent/KR101475899B1/ko active IP Right Grant
- 2010-12-08 US US13/823,108 patent/US9058982B2/en active Active
- 2010-12-08 WO PCT/JP2010/007137 patent/WO2012077163A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878408A (ja) * | 1994-09-08 | 1996-03-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH1012611A (ja) * | 1996-06-26 | 1998-01-16 | Sony Corp | 配線保護用パッシベーション膜、及び半導体装置の製造方法 |
JP2003060030A (ja) * | 2001-08-10 | 2003-02-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2009076886A (ja) * | 2007-08-24 | 2009-04-09 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016510171A (ja) * | 2013-03-01 | 2016-04-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 金属酸化物tftの安定性向上 |
JP5454727B1 (ja) * | 2013-07-10 | 2014-03-26 | 日新電機株式会社 | 薄膜トランジスタの作製方法 |
JP2015018889A (ja) * | 2013-07-10 | 2015-01-29 | 日新電機株式会社 | 薄膜トランジスタの作製方法 |
JP2016072570A (ja) * | 2014-10-01 | 2016-05-09 | 東京エレクトロン株式会社 | 電子デバイス、その製造方法、及びその製造装置 |
JP2016082241A (ja) * | 2014-10-20 | 2016-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、ならびにモジュールおよび電子機器 |
KR20180077277A (ko) | 2015-12-08 | 2018-07-06 | 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠 | 박막 트랜지스터와 그 제조 방법 및 그 박막 트랜지스터를 갖는 반도체 장치 |
US10475934B2 (en) | 2015-12-08 | 2019-11-12 | National University Corporation NARA Institute of Science and Technology | Thin film transistor, method for manufacturing same and semiconductor device comprising said thin film transistor |
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