WO2012073302A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2012073302A1
WO2012073302A1 PCT/JP2010/071240 JP2010071240W WO2012073302A1 WO 2012073302 A1 WO2012073302 A1 WO 2012073302A1 JP 2010071240 W JP2010071240 W JP 2010071240W WO 2012073302 A1 WO2012073302 A1 WO 2012073302A1
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WIPO (PCT)
Prior art keywords
thickness
region
surface electrode
semiconductor device
thickness region
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PCT/JP2010/071240
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English (en)
French (fr)
Inventor
田中　宏明
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トヨタ自動車株式会社
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Publication date
Application filed by トヨタ自動車株式会社 filed Critical トヨタ自動車株式会社
Priority to PCT/JP2010/071240 priority Critical patent/WO2012073302A1/ja
Priority to CN201080070413.7A priority patent/CN103229286B/zh
Priority to EP10860383.8A priority patent/EP2648212B1/en
Priority to JP2012546585A priority patent/JPWO2012073302A1/ja
Priority to US13/989,962 priority patent/US8836150B2/en
Publication of WO2012073302A1 publication Critical patent/WO2012073302A1/ja

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Definitions

  • the technology described in this specification relates to a semiconductor device.
  • a bonding wire is bonded to the surface of the surface electrode in order to electrically connect the surface electrode formed on the surface of the semiconductor substrate and the external terminal.
  • the surface electrode and the semiconductor substrate located below the bonding junction may be damaged at the bonding junction of the surface electrode due to the stress generated when bonding the bonding wire.
  • Patent Document 1 a cell region in which a semiconductor element is formed and Then, a dummy cell region where no semiconductor element is formed is mixed, and a bonding wire is bonded to the surface electrode of the portion formed on the surface of the dummy cell region. This suppresses damage to the cell region.
  • Patent Document 2 the thickness of the entire surface electrode is increased to relieve the stress generated at the bonding junction.
  • the semiconductor device disclosed in this specification has a semiconductor substrate having an element region in which a semiconductor element is formed, and a surface electrode formed on the surface of the element region of the semiconductor substrate.
  • the surface electrode includes a first thickness region and a second thickness region thicker than the first thickness region, and the bonding wire is bonded to the second thickness region.
  • the bonding wire is bonded to the second thickness region of the surface electrode formed on the surface of the element region of the semiconductor substrate. Since the second thickness region is thicker than the first thickness region, stress generated in the second thickness region due to bonding of the bonding wires is relieved, and damage to the semiconductor device is suppressed. Even if the bonding wire is bonded to the surface electrode formed on the element surface, damage to the semiconductor device can be suppressed. Since the surface electrode has a first thickness region that is thinner than the second thickness region, the occurrence of warpage of the semiconductor wafer is suppressed in the manufacturing process of the semiconductor device.
  • a slit portion can be provided at the boundary between the first thickness region and the second thickness region, and the surface electrode of the slit portion can be made thinner than the surface electrode of the first thickness region.
  • FIG. 3 is a plan view of the semiconductor device of Example 1 and shows a state in which a bonding wire is bonded to a surface electrode.
  • FIG. 2 is a sectional view taken along line II-II in FIG. It is a figure which shows the relationship between the thickness of a surface electrode, and the element breakdown tolerance improvement rate of a semiconductor device.
  • 6 is a diagram illustrating a method for manufacturing the semiconductor device of Example 1.
  • FIG. 6 is a diagram illustrating a method for manufacturing the semiconductor device of Example 1.
  • FIG. It is sectional drawing of the semiconductor device of a modification.
  • the semiconductor device disclosed in this specification has a semiconductor substrate having an element region in which a semiconductor element is formed, and a surface electrode formed on the surface of the element region of the semiconductor substrate.
  • the surface electrode includes a first thickness region and a second thickness region.
  • the surface electrode in the second thickness region is thicker than the surface electrode in the first thickness region.
  • the bonding wire is bonded to at least a part of the surface of the surface electrode in the second thickness region.
  • the surface electrode is not particularly limited as long as it is an electrode for bonding a bonding wire to the surface, and may be an electrode formed on the surface of the main cell region of the semiconductor substrate or provided on the surface of the sense cell region. It may be an electrode.
  • each of the surface electrodes that bond bonding wires has a first thickness region and a second thickness region. It is only necessary that the second thickness region includes a bonding region where the surface electrode and the bonding wire are bonded when the semiconductor device is viewed in plan.
  • a bonding wire may be bonded to the surface of at least one second thickness region of the plurality, or all of them
  • a bonding wire may be bonded to the surface of the second thickness region.
  • the shape of the bonding wire may be a linear shape such as a metal wire, or may be a tape shape or a ribbon shape.
  • the semiconductor device may be a semiconductor device that joins a bonding wire to the surface electrode, and is not limited by the type of semiconductor element (eg, IGBT, MOS, diode) formed on the semiconductor substrate.
  • the semiconductor device 10 includes a semiconductor substrate 100, front surface electrodes 121 to 123 formed on the surface of the semiconductor substrate 100, and a back surface electrode 130 formed on the back surface of the semiconductor substrate 100.
  • the front electrodes 121 to 123 and the back electrode 130 are mainly composed of metal.
  • the semiconductor substrate 100 includes a plurality of main cell regions 111 to 113 in which semiconductor elements are formed, and a non-cell region 102 in which semiconductor elements are not formed.
  • the surface electrodes 121 to 123 are formed on the surfaces of the main cell regions 111 to 113. A part of the surface electrodes 121 to 123 may extend to the surface of the non-cell region 102.
  • a gate pad is provided on the surface of the semiconductor device 10, and a small signal pad such as a sense pad may be further provided.
  • a trench gate type IGBT is formed in the main cell region 113 of the semiconductor substrate 100.
  • the main cell region 113 includes a collector layer 11, a drift layer 12, and a body layer 13 from the back side thereof, and an emitter layer 14 is formed on a part of the surface of the body layer 13.
  • the body layer 13 and the emitter layer 14 are electrically connected to the surface electrode 123.
  • the trench gate 15 penetrates the emitter layer 14 and the body layer 13 from the surface side of the semiconductor substrate 100 and reaches the drift layer 12.
  • the trench gate 15 is filled with a gate electrode covered with an insulating film.
  • the gate electrode is insulated from the surface electrode 123 by the insulating film 16.
  • trench gate type IGBTs are also formed in the main cell regions 111 and 112.
  • the surface electrodes 121 to 123 are main emitter electrodes of the main cell regions 111 to 113, respectively.
  • the surface electrodes 121 to 123 include second thickness regions 121a to 121d, 122a to 122d, 123a to 123d, and first thickness regions 121e, 122e, and 123e.
  • Bonding wires 221 to 226 are bonded to the surfaces of the second thickness regions 121a to 121d, 122a to 122d, and 123a to 123d, respectively.
  • the bonding wires 221 to 226 are metal wires.
  • the second thickness regions 121a to 121d, 122a to 122d, and 123a to 123d are rectangular when the semiconductor device is viewed in plan.
  • Bonding wires 221 to 226 are joined to the central portions of the surfaces of the second thickness regions 121a to 121d, 122a to 122d, and 123a to 123d.
  • the bonding wire 221 is bonded to the surfaces of the second thickness region 121a and the second thickness region 121c located below the bonding wire 221 and is a region between the second thickness region 121a and the second thickness region 121c. Then, it curves upwards.
  • the bonding wires 222 to 226 are bonded and bonded to the surfaces of the second thickness regions 121b, 121d, 122a to 122d, and 123a to 123d located below the second bonding regions. The region between the thickness regions is curved upward.
  • Bonding wires are not joined to the first thickness regions 121e, 122e, and 123e.
  • the thickness W2 of the surface electrode in the second thickness region 121 is thicker than the thickness W1 of the surface electrode in the first thickness region 122 (W2> W1).
  • FIG. 3 shows the results of examining the relationship between the thickness of the surface electrode and the element breakdown resistance improvement rate of the semiconductor device. Note that an aluminum electrode was used as the surface electrode, and the bonding wire was bonded to the surface of the surface electrode formed on the surface of the element region of the semiconductor substrate by using an ultrasonic bonding technique.
  • the horizontal axis shows the thickness of the surface electrode, and shows the ratio to the thickness of the conventional surface electrode.
  • the vertical axis represents the element breakdown resistance improvement rate of the semiconductor device.
  • the element breakdown resistance improvement rate is the ratio of the number of elements of a semiconductor device of a surface electrode having a predetermined thickness that is destroyed when wire bonding is performed at a predetermined bonding pressure.
  • the numerical value divided by the ratio of the number of the elements of the semiconductor device that are destroyed is indicated by%.
  • the element breakdown resistance improvement rate of the semiconductor device increases as the thickness of the surface electrode increases. For example, when the surface electrode thickness is 1.4 times, the 2% element breakdown resistance improvement rate is high, and when the surface electrode thickness is 1.8 times, the 9% element breakdown resistance improvement rate is high. Become.
  • the results shown in FIG. 3 show that as the thickness of the surface electrode increases, the effect of relaxing the stress generated in the region where the bonding wire is bonded to the surface electrode is higher, and the element breakdown resistance improvement rate of the semiconductor device is higher. This is considered to indicate that
  • the thickness of the entire surface electrode is increased, the coefficient of thermal expansion between the surface electrode and the semiconductor substrate is different, so that the semiconductor wafer is likely to warp in the manufacturing process of the semiconductor device, which is likely to cause defects.
  • semiconductor wafers tend to be thinned.
  • the thickness of the semiconductor wafer can be thinned to about 100 to 200 ⁇ m. As the thickness of the semiconductor wafer is reduced, the semiconductor wafer is more likely to warp.
  • the stress generated in the second thickness region is relieved. Since the surface electrode has a first thickness region that is thinner than the second thickness region, the occurrence of warpage of the semiconductor wafer is suppressed in the manufacturing process of the semiconductor device. It is possible to improve both the element breakdown resistance of the semiconductor device and to suppress the warpage of the semiconductor wafer. Since stress generated in the second thickness region of the semiconductor device is relieved, a bonding wire can be bonded to the surface electrode formed on the surface of the element region, and the semiconductor device can be miniaturized.
  • W2 / W1 is preferably 1.2 or more. Further, from the viewpoint of easy manufacture of the surface electrode, W2 / W1 is preferably 2.0 or less.
  • the surface electrode 123 having the second thickness region 123a and the like having the thickness W2 and the first thickness region 123e and the like having the thickness W1 can be easily manufactured by the manufacturing method shown in FIGS.
  • a surface electrode film 323 having a uniform thickness W2 is formed on the surface of the semiconductor substrate 100.
  • a resist 330 patterned so as to cover the surface of the surface electrode film 323 that becomes the second thickness region 123a and the like is formed.
  • the surface electrode film 323 in a portion not covered with the resist 330 (a portion that becomes the first thickness region 123e and the like) is removed.
  • the second thickness region 123a and the like having the thickness W2 and the first thickness region 123e and the like having the thickness W1 can be formed.
  • the slit part 141 may be provided in the boundary of the 1st thickness area
  • the slit portion 141 may be formed at a part of the boundary between the first thickness region 123e and the second thickness region 123a, or the first thickness so as to surround the second thickness region 123a. You may form in the whole boundary of the area
  • the slit portion 141 is formed by making the thickness of the surface electrode 123 at the boundary between the second thickness region 123a and the first thickness region 123e thinner than the first thickness region 123e by W3. Can be formed.
  • the thickness (W1-W3) of the surface electrode 123 in the slit part 141 is preferably 1 ⁇ m or more.
  • the second thickness region is rectangular when the semiconductor device is viewed in plan.
  • the second thickness region is not limited to this, and may be circular, elliptical, triangular, or other polygonal shapes. It may be indefinite.
  • a small signal pad such as a gate pad or a sense pad is further provided on the surface of the semiconductor device
  • the gate pad or the small signal pad has the first thickness region and the second thickness according to the present invention.
  • It is a surface electrode provided with the area
  • the bonding wire may not be joined.

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Abstract

　本明細書が開示する半導体装置は、半導体素子が形成された素子領域を有する半導体基板と、半導体基板の素子領域の表面に形成された表面電極とを有している。表面電極は、第１厚さ領域と、第１厚さ領域よりも厚い第２厚さ領域とを備えており、ボンディングワイヤは、第２厚さ領域に接合される。

Description

半導体装置
　本明細書に記載の技術は、半導体装置に関する。
　半導体基板の表面に形成された表面電極と、外部端子とを電気的に接続するために、表面電極の表面にボンディングワイヤがボンディング接合される。表面電極のボンディング接合部分には、ボンディングワイヤをボンディング接合する際に発生する応力によって、ボンディング接合部分の下方に位置する表面電極や半導体基板が破損する場合がある。ボンディング接合部分に発生する応力に起因する表面電極や半導体基板の破損を防ぐために、例えば、日本国特許公開公報平７－２０１９０８号（特許文献１）では、半導体素子が形成されているセル領域と、半導体素子が形成されていないダミーセル領域とを混在させ、ダミーセル領域の表面に形成された部分の表面電極にボンディングワイヤを接合する。これによって、セル領域が破損することを抑制する。また、日本国特許公開公報２００２－２２２８２６号（特許文献２）では、表面電極全体の厚さを厚くして、ボンディング接合部分に発生する応力を緩和している。
特開平７－２０１９０８号公報 特開２００２－２２２８２６号公報
　日本国特許公開公報平７－２０１９０８号のようにボンディング接合のために、ダミーセル領域を設けると、半導体基板の基板面積に対するセル領域の割合が小さくなり、半導体装置が大型化する。また、日本国特許公開公報２００２－２２２８２６号のように、表面電極全体の厚さを厚くすると、表面電極と半導体基板との熱膨張率が異なるため、半導体装置の製造工程において半導体ウェハが反り易くなり、不良発生の原因となり易い。
　本明細書が開示する半導体装置は、半導体素子が形成された素子領域を有する半導体基板と、半導体基板の素子領域の表面に形成された表面電極とを有している。表面電極は、第１厚さ領域と、第１厚さ領域よりも厚い第２厚さ領域とを備えており、ボンディングワイヤは、第２厚さ領域に接合される。
　上記の半導体装置では、ボンディングワイヤは、半導体基板の素子領域の表面に形成された表面電極の第２厚さ領域に接合される。第２厚さ領域は、第１厚さ領域よりも厚いため、ボンディングワイヤを接合することに起因して第２厚さ領域に発生する応力が緩和され、半導体装置の破損が抑制される。ボンディングワイヤを素子表面に形成された表面電極に接合しても、半導体装置の破損を抑制することができる。表面電極は、第２厚さ領域よりも薄い第１厚さ領域を備えているため、半導体装置の製造工程において半導体ウェハの反りの発生が抑制される。
　第１厚さ領域と第２厚さ領域との境界には、スリット部を設けることができ、スリット部の表面電極は、第１厚さ領域の表面電極よりも薄くすることができる。スリット部を設けると、スリット部によって、半導体装置の製造工程における半導体ウェハの反りの発生がさらに抑制される。
実施例１の半導体装置の平面図であって、表面電極にボンディングワイヤを接合した状態を示している。 図１のＩＩ－ＩＩ線断面図である。 表面電極の厚さと半導体装置の素子破壊耐性向上率との関係を示す図である。 実施例１の半導体装置の製造方法を示す図である。 実施例１の半導体装置の製造方法を示す図である。 変形例の半導体装置の断面図である。
　本明細書が開示する半導体装置は、半導体素子が形成された素子領域を有する半導体基板と、半導体基板の素子領域の表面に形成された表面電極とを有している。表面電極は、第１厚さ領域と、第２厚さ領域とを備えている。第２厚さ領域の表面電極は、第１厚さ領域の表面電極よりも厚い。ボンディングワイヤは、第２厚さ領域の表面電極の表面の少なくとも一部に接合される。表面電極は、その表面にボンディングワイヤの接合を行う電極であれば特に限定されず、半導体基板のメインセル領域の表面に形成されている電極であってもよいし、センスセル領域の表面に設けられている電極であってもよい。半導体装置がボンディングワイヤの接合を行う表面電極を複数有する場合には、ボンディングワイヤの接合を行う表面電極のそれぞれが第１厚さ領域と第２厚さ領域とを備えていることが好ましい。半導体装置を平面視したときに、表面電極とボンディングワイヤとが接合する接合領域が第２厚さ領域に含まれていればよい。表面電極が複数個の第２厚さ領域を有している場合には、複数個のうちの少なくとも１つの第２厚さ領域の表面にボンディングワイヤが接合されていてもよいし、その全ての第２厚さ領域の表面にボンディングワイヤが接合されていてもよい。ボンディングワイヤの形状は、金属線等の線状でもよいし、テープ状またはリボン状であってもよい。半導体装置は、表面電極にボンディングワイヤを接合する半導体装置であればよく、半導体基板に形成される半導体素子の種類（例えば、ＩＧＢＴ、ＭＯＳ、ダイオード）によって限定されない。
　図１および図２に示すように、半導体装置１０は、半導体基板１００と、半導体基板１００の表面に形成された表面電極１２１～１２３と、半導体基板１００の裏面に形成された裏面電極１３０とを備えている。表面電極１２１～１２３、裏面電極１３０は、金属を主成分としている。半導体基板１００は、半導体素子が形成されている複数のメインセル領域１１１～１１３と、半導体素子が形成されていない非セル領域１０２とを備えている。表面電極１２１～１２３は、メインセル領域１１１～１１３の表面に形成されている。表面電極１２１～１２３は、その一部が非セル領域１０２の表面にまで延びていてもよい。なお、図示していないが、半導体装置１０の表面には、ゲートパッドが備えられており、センスパッド等の小信号パッドをさらに備えていてもよい。
　図２に示すように、半導体基板１００のメインセル領域１１３には、トレンチゲート型のＩＧＢＴが形成されている。メインセル領域１１３には、その裏面側から、コレクタ層１１、ドリフト層１２、ボディ層１３を備えており、ボディ層１３の表面の一部にエミッタ層１４が形成されている。ボディ層１３とエミッタ層１４は、表面電極１２３と電気的に接続している。トレンチゲート１５は、半導体基板１００の表面側から、エミッタ層１４およびボディ層１３を貫通して、ドリフト層１２に達している。トレンチゲート１５の内部には、絶縁膜によって被覆されているゲート電極が充填されている。ゲート電極は、絶縁膜１６によって表面電極１２３と絶縁されている。なお、メインセル領域１１１，１１２にも、メインセル領域１１３と同様に、トレンチゲート型のＩＧＢＴが形成されている。表面電極１２１～１２３は、各メインセル領域１１１～１１３のメインエミッタ電極である。
　表面電極１２１～１２３は、第２厚さ領域１２１ａ～１２１ｄ、１２２ａ～１２２ｄ、１２３ａ～１２３ｄと、第１厚さ領域１２１ｅ，１２２ｅ，１２３ｅを備えている。第２厚さ領域１２１ａ～１２１ｄ、１２２ａ～１２２ｄ、１２３ａ～１２３ｄの表面に、ボンディングワイヤ２２１～２２６がそれぞれボンディング接合される。ボンディングワイヤ２２１～２２６は、金属線である。第２厚さ領域１２１ａ～１２１ｄ、１２２ａ～１２２ｄ、１２３ａ～１２３ｄは、半導体装置を平面視したときに長方形状である。第２厚さ領域１２１ａ～１２１ｄ、１２２ａ～１２２ｄ、１２３ａ～１２３ｄの表面の中央部にボンディングワイヤ２２１～２２６が接合されている。ボンディングワイヤ２２１は、その下方に位置する第２厚さ領域１２１ａと第２厚さ領域１２１ｃの表面にボンディング接合されており、第２厚さ領域１２１ａと第２厚さ領域１２１ｃとの間の領域では、上方に湾曲している。ボンディングワイヤ２２２～２２６についても同様に、それぞれの下方に位置する第２厚さ領域１２１ｂ，１２１ｄ，１２２ａ～１２２ｄ，１２３ａ～１２３ｄの表面にボンディング接合されており、それぞれのボンディングワイヤが接合する第２厚さ領域の間の領域では、上方に湾曲している。第１厚さ領域１２１ｅ，１２２ｅ，１２３ｅにはボンディングワイヤは接合されていない。第２厚さ領域１２１の表面電極の厚さＷ２は、第１厚さ領域１２２の表面電極の厚さＷ１よりも厚い（Ｗ２＞Ｗ１）。
　図３は、表面電極の厚さと、半導体装置の素子破壊耐性向上率との関係を調べた結果を示す。なお、表面電極としてはアルミニウム電極を用い、ボンディングワイヤは、半導体基板の素子領域の表面に形成された表面電極の表面に、超音波接合技術を用いて接合した。横軸は、表面電極の厚さを示しており、従来の表面電極の厚さに対する比を示している。縦軸は、半導体装置の素子破壊耐性向上率を示している。素子破壊耐性向上率は、所定のボンディング圧でワイヤボンディングを行った場合に、所定の厚さの表面電極の半導体装置の素子が破壊される個数の割合を、表面電極の厚さが従来の厚さである半導体装置の素子が破壊される個数の割合で割った数値を％で示している。図３に示すように、表面電極の厚さが厚くなるほど、半導体装置の素子破壊耐性向上率が高くなる。例えば、表面電極厚さが１．４倍の場合には、２％素子破壊耐性向上率が高くなり、表面電極厚さが１．８倍の場合には、９％素子破壊耐性向上率が高くなる。図３に示す結果は、表面電極の厚さが厚くなるほど、表面電極にボンディングワイヤをボンディング接合した領域に発生する応力を緩和する効果が高く、半導体装置の素子破壊耐性向上率がより高くなっていることを示していると考えられる。
　一方で、表面電極全体の厚さを厚くすると、表面電極と半導体基板との熱膨張率が異なるため、半導体装置の製造工程において半導体ウェハが反り易くなり、不良発生の原因となり易い。近年、半導体ウェハは薄板化される傾向が著しく、例えば、厚さが１００～２００μｍ程度まで薄板化される場合がある。半導体ウェハの厚さが薄くなるほど、半導体ウェハは反り易くなる。
　本実施例では、表面電極の第２厚さ領域は、表面電極の第１厚さ領域よりも厚いため、第２厚さ領域に発生する応力が緩和される。表面電極は、第２厚さ領域よりも薄い第１厚さ領域を備えているため、半導体装置の製造工程において半導体ウェハの反りの発生が抑制される。半導体装置の素子破壊耐性を向上させることと、半導体ウェハの反り発生を抑制することとを両立することができる。半導体装置の第２厚さ領域に発生する応力が緩和されるため、素子領域の表面に形成された表面電極上にボンディングワイヤをボンディング接合することができ、半導体装置を小型化することができる。
　なお、ボンディングワイヤを超音波接合する場合は、ボンディングの強度を向上させるために、Ｗ２／Ｗ１は１．２以上であることが好ましい。また、表面電極の製造し易さの観点からは、Ｗ２／Ｗ１は２．０以下であることが好ましい。
　厚さがＷ２の第２厚さ領域１２３ａ等と厚さがＷ１の第１厚さ領域１２３ｅ等とを備えた表面電極１２３は、図４、図５に示す製造方法によって容易に製造できる。まず、図４に示すように、厚さが一様にＷ２である表面電極膜３２３を半導体基板１００の表面に形成する。次に、表面電極膜３２３の第２厚さ領域１２３ａ等となる部分の表面を覆うようにパターニングされたレジスト３３０を形成する。この状態でエッチングを行うと、レジスト３３０によって覆われていない部分（第１厚さ領域１２３ｅ等となる部分）の表面電極膜３２３が除去される。これによって、図５に示すように、厚さがＷ２の第２厚さ領域１２３ａ等と、厚さがＷ１の第１厚さ領域１２３ｅ等とを形成することができる。
　（変形例）
　図６に示すように、第１厚さ領域１２３ｅと第２厚さ領域１２３ａとの境界に、スリット部１４１が設けられていてもよい。スリット部１４１は、第１厚さ領域１２３ｅと第２厚さ領域１２３ａとの境界の一部に形成されていてもよいし、第２厚さ領域１２３ａの周囲を囲むように、第１厚さ領域１２３ｅと第２厚さ領域１２３ａとの境界全体に形成されていてもよい。スリット部を設けることによって、半導体装置の製造工程におけるウェハの反りを緩和する効果が向上する。例えば、図６に示すように、第２厚さ領域１２３ａと第１厚さ領域１２３ｅの境界における表面電極１２３の厚さを第１厚さ領域１２３ｅよりもＷ３だけ薄くすることによって、スリット部１４１を形成することができる。この場合、スリット部１４１における表面電極１２３の厚さ（Ｗ１－Ｗ３）は、１μｍ以上であることが好ましい。
　なお、上記の実施例および変形例においては、半導体装置を平面視したときに第２厚さ領域は長方形状であったが、これに限定されず、円形、楕円形、三角形、その他多角形状でもよく、不定形であってもよい。また、半導体装置の表面に、ゲートパッドやセンスパッド等の小信号パッドがさらに備えられている場合には、ゲートパッドや小信号パッドが、本発明に係る第１厚さ領域と第２厚さ領域を備えた表面電極であり、その第２厚さ領域にボンディングワイヤが接合されてもよい。また、上記の実施例および変形例においては、複数の第２厚さ領域のいずれにもボンディングワイヤが接合されている場合を例示して説明したが、複数個の第２厚さ領域の全てにボンディングワイヤが接合されていなくてもよい。
　以上、本発明の実施例について詳細に説明したが、これらは例示に過ぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。
　本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成し得るものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。

Claims (3)

  1. 　半導体素子が形成された素子領域を有する半導体基板と、半導体基板の素子領域の表面に形成された表面電極とを有しており、
    　表面電極は、第１厚さ領域と、第１厚さ領域よりも厚い第２厚さ領域とを備えており、
    　ボンディングワイヤは、第２厚さ領域に接合される、半導体装置。
  2. 　表面電極の第１厚さ領域と第２厚さ領域との境界には、スリット部が設けられている、請求項１に記載の半導体装置。
  3. 　ボンディングワイヤは、超音波ボンディングによって表面電極に接合される、請求項１または２に記載の半導体装置。
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JP2017059672A (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
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