WO2011158659A1 - 金属ナノ粒子ペースト、並びに金属ナノ粒子ペーストを用いた電子部品接合体、ledモジュール及びプリント配線板の回路形成方法 - Google Patents
金属ナノ粒子ペースト、並びに金属ナノ粒子ペーストを用いた電子部品接合体、ledモジュール及びプリント配線板の回路形成方法 Download PDFInfo
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- WO2011158659A1 WO2011158659A1 PCT/JP2011/062687 JP2011062687W WO2011158659A1 WO 2011158659 A1 WO2011158659 A1 WO 2011158659A1 JP 2011062687 W JP2011062687 W JP 2011062687W WO 2011158659 A1 WO2011158659 A1 WO 2011158659A1
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- metal
- metal nanoparticle
- nanoparticle paste
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- metal nanoparticles
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- 239000002082 metal nanoparticle Substances 0.000 title claims abstract description 255
- 238000000034 method Methods 0.000 title claims description 27
- 230000001681 protective effect Effects 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000002612 dispersion medium Substances 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 34
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- -1 terpene alcohols Chemical class 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052718 tin Inorganic materials 0.000 claims description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 150000001735 carboxylic acids Chemical class 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 150000002894 organic compounds Chemical class 0.000 claims description 17
- 239000002105 nanoparticle Substances 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 150000002430 hydrocarbons Chemical group 0.000 claims description 15
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 125000004434 sulfur atom Chemical group 0.000 claims description 12
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 12
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052717 sulfur Inorganic materials 0.000 claims description 10
- 150000008064 anhydrides Chemical class 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 239000011164 primary particle Substances 0.000 claims description 8
- 235000007586 terpenes Nutrition 0.000 claims description 8
- 125000003277 amino group Chemical group 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 16
- 238000009766 low-temperature sintering Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 27
- 238000000576 coating method Methods 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 23
- 235000014113 dietary fatty acids Nutrition 0.000 description 16
- 229930195729 fatty acid Natural products 0.000 description 16
- 239000000194 fatty acid Substances 0.000 description 16
- 230000008018 melting Effects 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 11
- 238000002156 mixing Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- PRAKJMSDJKAYCZ-UHFFFAOYSA-N squalane Chemical compound CC(C)CCCC(C)CCCC(C)CCCCC(C)CCCC(C)CCCC(C)C PRAKJMSDJKAYCZ-UHFFFAOYSA-N 0.000 description 6
- 150000005846 sugar alcohols Chemical class 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000013329 compounding Methods 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 description 4
- 239000002932 luster Substances 0.000 description 4
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 4
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-Terpineol Chemical compound CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- JXTPJDDICSTXJX-UHFFFAOYSA-N n-Triacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC JXTPJDDICSTXJX-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 150000004671 saturated fatty acids Chemical class 0.000 description 3
- 229940032094 squalane Drugs 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 2
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 2
- PIYNUZCGMLCXKJ-UHFFFAOYSA-N 1,4-dioxane-2,6-dione Chemical compound O=C1COCC(=O)O1 PIYNUZCGMLCXKJ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 2
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- 239000004386 Erythritol Substances 0.000 description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229930195725 Mannitol Natural products 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000019414 erythritol Nutrition 0.000 description 2
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 description 2
- 229940009714 erythritol Drugs 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000594 mannitol Substances 0.000 description 2
- 235000010355 mannitol Nutrition 0.000 description 2
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229930003658 monoterpene Natural products 0.000 description 2
- 235000002577 monoterpenes Nutrition 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- 229960002446 octanoic acid Drugs 0.000 description 2
- CMLYGGFIXXLYQT-UHFFFAOYSA-N p-menthan-1-ol Chemical compound CC(C)C1CCC(C)(O)CC1 CMLYGGFIXXLYQT-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000003441 saturated fatty acids Nutrition 0.000 description 2
- 229930004725 sesquiterpene Natural products 0.000 description 2
- 239000000600 sorbitol Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 150000003628 tricarboxylic acids Chemical class 0.000 description 2
- 239000000811 xylitol Substances 0.000 description 2
- 235000010447 xylitol Nutrition 0.000 description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 2
- 229960002675 xylitol Drugs 0.000 description 2
- FQTLCLSUCSAZDY-UHFFFAOYSA-N (+) E(S) nerolidol Natural products CC(C)=CCCC(C)=CCCC(C)(O)C=C FQTLCLSUCSAZDY-UHFFFAOYSA-N 0.000 description 1
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical compound C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- RGZSQWQPBWRIAQ-CABCVRRESA-N (-)-alpha-Bisabolol Chemical compound CC(C)=CCC[C@](C)(O)[C@H]1CCC(C)=CC1 RGZSQWQPBWRIAQ-CABCVRRESA-N 0.000 description 1
- REPVLJRCJUVQFA-UHFFFAOYSA-N (-)-isopinocampheol Natural products C1C(O)C(C)C2C(C)(C)C1C2 REPVLJRCJUVQFA-UHFFFAOYSA-N 0.000 description 1
- 239000001500 (2R)-6-methyl-2-[(1R)-4-methyl-1-cyclohex-3-enyl]hept-5-en-2-ol Substances 0.000 description 1
- ADLXTJMPCFOTOO-UHFFFAOYSA-N (E)-2-Nonenoic acid Natural products CCCCCCC=CC(O)=O ADLXTJMPCFOTOO-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- ADLXTJMPCFOTOO-FPLPWBNLSA-N 2-nonenoic acid Chemical compound CCCCCC\C=C/C(O)=O ADLXTJMPCFOTOO-FPLPWBNLSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- OSFGNTLIOUHOKN-UHFFFAOYSA-N 4-[benzyl(methyl)sulfamoyl]benzoic acid Chemical compound C=1C=C(C(O)=O)C=CC=1S(=O)(=O)N(C)CC1=CC=CC=C1 OSFGNTLIOUHOKN-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 description 1
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- CKZXONNJVHXSQM-UHFFFAOYSA-N Ledol Natural products CC(C)C1CCC(C)(O)C2C3CC(C)CC123 CKZXONNJVHXSQM-UHFFFAOYSA-N 0.000 description 1
- FQTLCLSUCSAZDY-ATGUSINASA-N Nerolidol Chemical compound CC(C)=CCC\C(C)=C\CC[C@](C)(O)C=C FQTLCLSUCSAZDY-ATGUSINASA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- TUWWTQRJWLLWJE-UHFFFAOYSA-N Viridiflorol Natural products CC1CCC2C1C3C(CCC2(O)O)C3(C)C TUWWTQRJWLLWJE-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- RGZSQWQPBWRIAQ-LSDHHAIUSA-N alpha-Bisabolol Natural products CC(C)=CCC[C@@](C)(O)[C@@H]1CCC(C)=CC1 RGZSQWQPBWRIAQ-LSDHHAIUSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- CKDOCTFBFTVPSN-UHFFFAOYSA-N borneol Natural products C1CC2(C)C(C)CC1C2(C)C CKDOCTFBFTVPSN-UHFFFAOYSA-N 0.000 description 1
- 229940116229 borneol Drugs 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical group CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- SVURIXNDRWRAFU-OGMFBOKVSA-N cedrol Chemical compound C1[C@]23[C@H](C)CC[C@H]3C(C)(C)[C@@H]1[C@@](O)(C)CC2 SVURIXNDRWRAFU-OGMFBOKVSA-N 0.000 description 1
- 229940026455 cedrol Drugs 0.000 description 1
- PCROEXHGMUJCDB-UHFFFAOYSA-N cedrol Natural products CC1CCC2C(C)(C)C3CC(C)(O)CC12C3 PCROEXHGMUJCDB-UHFFFAOYSA-N 0.000 description 1
- 238000009690 centrifugal atomisation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- FLISWPFVWWWNNP-BQYQJAHWSA-N dihydro-3-(1-octenyl)-2,5-furandione Chemical compound CCCCCC\C=C\C1CC(=O)OC1=O FLISWPFVWWWNNP-BQYQJAHWSA-N 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- 150000004141 diterpene derivatives Chemical class 0.000 description 1
- DTGKSKDOIYIVQL-UHFFFAOYSA-N dl-isoborneol Natural products C1CC2(C)C(O)CC1C2(C)C DTGKSKDOIYIVQL-UHFFFAOYSA-N 0.000 description 1
- CECREIRZLPLYDM-UHFFFAOYSA-N ent-epimanool Natural products CC1(C)CCCC2(C)C(CCC(O)(C)C=C)C(=C)CCC21 CECREIRZLPLYDM-UHFFFAOYSA-N 0.000 description 1
- WGTRJVCFDUCKCM-UHFFFAOYSA-N ent-ledene Natural products C1CC2C(C)(C)C2C2C(C)CCC2=C1C WGTRJVCFDUCKCM-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- SVURIXNDRWRAFU-UHFFFAOYSA-N juniperanol Natural products C1C23C(C)CCC3C(C)(C)C1C(O)(C)CC2 SVURIXNDRWRAFU-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CECREIRZLPLYDM-QGZVKYPTSA-N manool Chemical compound CC1(C)CCC[C@]2(C)[C@@H](CC[C@](O)(C)C=C)C(=C)CC[C@H]21 CECREIRZLPLYDM-QGZVKYPTSA-N 0.000 description 1
- JKMAMXHNJFUAFT-UHFFFAOYSA-N manool Natural products CC1(C)CCCC2(C)C(CCC(O)C=C)C(=C)CCC12 JKMAMXHNJFUAFT-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 150000002773 monoterpene derivatives Chemical class 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- WASNIKZYIWZQIP-AWEZNQCLSA-N nerolidol Natural products CC(=CCCC(=CCC[C@@H](O)C=C)C)C WASNIKZYIWZQIP-AWEZNQCLSA-N 0.000 description 1
- 229940038384 octadecane Drugs 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- GGHMUJBZYLPWFD-CUZKYEQNSA-N patchouli alcohol Chemical compound C1C[C@]2(C)[C@@]3(O)CC[C@H](C)[C@@H]2C[C@@H]1C3(C)C GGHMUJBZYLPWFD-CUZKYEQNSA-N 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- GGHMUJBZYLPWFD-UHFFFAOYSA-N rac-patchouli alcohol Natural products C1CC2(C)C3(O)CCC(C)C2CC1C3(C)C GGHMUJBZYLPWFD-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004354 sesquiterpene derivatives Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- AYXPYQRXGNDJFU-IMNVLQEYSA-N viridiflorol Chemical compound [C@@H]1([C@@](CC[C@@H]2[C@H]3C2(C)C)(C)O)[C@H]3[C@H](C)CC1 AYXPYQRXGNDJFU-IMNVLQEYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
Definitions
- the present invention relates to a metal nanoparticle paste containing metal nanoparticles having a surface coated with a protective film and carboxylic acids, and more specifically, a substrate by heat treatment at a very low temperature by printing such as screen printing or inkjet printing.
- the present invention relates to a metal nanoparticle paste capable of forming a wiring pattern thereon and bonding an electronic component on a substrate by a very low temperature heat treatment.
- silver paste that can be electrically joined at a relatively low temperature has been used for mounting electronic components and modules that are unsuitable for soldering due to its heat resistance. Increases in resistance, generation of Kirkendall voids, costs, and the like are problems. On the other hand, in order to prevent an increase in conduction resistance, low melting point metals, conductive fillers, and metal nanoparticles are added to the silver paste.
- Patent Documents 1 and 2 Examples of the method for producing metal nanoparticles whose surface is coated and colloidally dispersed include a gas evaporation method and a reduction precipitation method (Patent Documents 1 and 2).
- the active continuous interfacial deposition method is also one of the methods for producing colloidally dispersed metal nanoparticles whose surface is coated.
- the smallest, uniform size and shape of metal / alloy fine particle colloids is relatively simple. It can be obtained with an apparatus and can be applied to many kinds of metals and alloys (Patent Document 3).
- metal nanoparticles have a large specific surface area and high reaction activity, they have the characteristic of low-temperature sintering that fuses at a low temperature compared to metal bulk.
- a fusion-bonding phenomenon occurs due to a heat treatment of about 200 to 300 ° C., which is much lower than the original melting point of 964 ° C., and exhibits the same electrical conductivity as a metal bulk.
- Patent Document 4 proposes a method of forming a wiring pattern using copper nanoparticles at a low temperature in a short time.
- copper like tin, is also susceptible to oxidation in the atmosphere. Therefore, by reducing the copper oxide nanoparticles in a plasma atmosphere generated in the presence of a reducing gas, a sintered body of copper nanoparticles can be obtained. It is necessary to form. Therefore, the above-described technique has a problem that the reaction atmosphere must be strictly controlled and a special apparatus must be used.
- the present invention can easily obtain a metallic bond excellent in conductivity and mechanical characteristics and form a wiring pattern excellent in conductivity using the low-temperature sintering characteristics of metal nanoparticles.
- An object is to provide a metal nanoparticle paste.
- An aspect of the present invention includes (A) metal nanoparticles, (B) a protective film covering the surface of the metal nanoparticles, (C) carboxylic acids, and (D) a dispersion medium. Metal nanoparticle paste. (A) Due to the intermolecular force caused by the electrostatic force generated between the metal nanoparticle and (B) the compound that is a component of the protective film, that is, electrostatic bonding, (A) the surface of the metal nanoparticle (B) A protective film couple
- the metal nanoparticle paste can be stored in the dispersion medium in a state in which aggregation of the metal nanoparticles is prevented.
- the metal nanoparticle paste is heat-treated at a predetermined temperature lower than the melting point of the metal nanoparticles, that is, sintered at a low temperature
- the protective film and (C) the carboxylic acid react to produce (A) metal It is considered that the bond between the nanoparticles and (B) the protective film is broken due to the intermolecular force due to the electrostatic force, and (B) the protective film is separated from the surface of the metal nanoparticles (A).
- an aspect of the present invention is the metal nanoparticle paste (A) wherein the metal nanoparticles have an average primary particle diameter of 1 to 100 nm.
- the (A) metal nanoparticles are at least selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, bismuth, lead, indium, tin, zinc, titanium, aluminum, and antimony. It is a metal nanoparticle paste characterized by being a kind of metal.
- the metal nanoparticles (A) are at least selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, bismuth, lead, indium, tin, zinc, titanium, aluminum, and antimony.
- An embodiment of the present invention is the metal nanoparticle paste (A) wherein the metal nanoparticles are tin and the average primary particle diameter of the tin is 1 to 50 nm.
- the protective film covering the surface of the metal nanoparticle can be coordinated by the lone electron pair with the metal nanoparticle
- A) An oxygen atom, a nitrogen atom or a sulfur atom of an organic compound constituting the protective film (B) is bonded to the metal nanoparticles by an intermolecular force derived from an electrostatic force, whereby (B) the protective film becomes (A) It is thought to coat metal nanoparticles.
- the group containing an oxygen atom includes a hydroxy group (—OH) or an oxy group (—O—), the group containing a nitrogen atom includes an amino group (—NH 2 ), and the sulfur atom.
- the metal nanoparticle paste is characterized in that the group is a sulfanyl group (—SH).
- the organic compound having a group containing an oxygen atom is represented by the following general formula (I):
- R 1 , R 2 and R 3 each independently represents a monovalent group having 2 to 20 carbon atoms, which represents a saturated hydrocarbon group or an unsaturated hydrocarbon group).
- This is a metal nanoparticle paste.
- the general formula (I) is an ester of a sugar alcohol and a fatty acid that have been dehydrated intramolecularly, and the oxygen atom of the hydroxy group (—OH) of the sugar alcohol that has been dehydrated intramolecularly due to intermolecular force ( A) It is thought that (B) a protective film coats (A) metal nanoparticles by bonding to the surface of metal nanoparticles.
- the sugar alcohol fatty acid ester of the general formula (I) reacts with carboxylic acids such as a monocarboxylic acid of the following general formula (II) and a dicarboxylic acid of the following general formula (III). It is considered that (B) the protective film is separated from the surface of the metal nanoparticle (B) by the reaction of the hydroxy group of carboxylic acid with the carboxyl group of the carboxylic acid.
- the organic compound having a group containing a nitrogen atom is represented by the following general formula (IV):
- R 6 is a monovalent group having 2 to 20 carbon atoms and represents a saturated hydrocarbon group or an unsaturated hydrocarbon group).
- the general formula (IV) is an amine, and the nitrogen atom of the amino group is bonded to the surface of the metal nanoparticle (A) by intermolecular force due to electrostatic force, so that (B) the protective film becomes (A) metal nanoparticle. It is thought to coat the particles.
- An aspect of the present invention is a metal nanoparticle paste, wherein the (C) carboxylic acid is a monocarboxylic acid or an anhydride thereof, or a dicarboxylic acid or an anhydride thereof.
- the monocarboxylic acid is represented by the following general formula (II):
- R 4 is a monovalent group having 6 to 10 carbon atoms and represents a saturated hydrocarbon group or an unsaturated hydrocarbon group
- a metal nanoparticle paste characterized by It is.
- the dicarboxylic acid is represented by the following general formula (III):
- R 5 represents a divalent group having 1 to 12 carbon atoms which may have an ether bond
- R 5 is a metal nanoparticle paste characterized by the above.
- An aspect of the present invention is a metal nanoparticle paste characterized in that (A) the metal nanoparticles contain silver and (D) the dispersion medium is terpene alcohols. That is, (A) the metal species of the metal nanoparticles is silver or at least contains silver.
- An aspect of the present invention is an electronic component joined body in which an electronic component is mounted on a substrate using the metal nanoparticle paste.
- the metal nanoparticle paste is used as a conductive bonding material between the substrate and the electronic component.
- An aspect of the present invention is an LED module characterized in that an LED element is bonded to a substrate with the metal nanoparticle paste.
- An aspect of the present invention is to form electrodes and a wiring pattern on a printed wiring board by a screen printing method or an ink jet method using the metal nanoparticle paste, and to heat the wiring pattern by heating at 250 ° C. or higher.
- the present invention using the low-temperature sintering characteristics of metal nanoparticles, it is possible to easily and inexpensively obtain a metallic bond excellent in conductivity and mechanical strength, and to form a wiring pattern excellent in conductivity. Further, since the surface of the metal nanoparticles is coated with the protective film, the dispersion stability can be improved by preventing aggregation of the metal nanoparticles during storage of the metal nanoparticle paste. Furthermore, when the metal nanoparticle paste is heat-treated at a temperature lower than the melting point, the protective film and the carboxylic acid react with each other, so that the protective film is separated from the surface of the metal nanoparticles, so that the dispersion stability during storage is excellent and easy. In addition, metal nanoparticles can be aggregated and sintered.
- the coating film when a coating film is formed using a metal nanoparticle paste using terpene alcohols as a dispersion medium for metal nanoparticles containing silver, the coating film has not only excellent conductivity and mechanical strength but also high reflectivity. A membrane can be obtained. Moreover, the metal nanoparticle paste containing silver has excellent electrical conductivity and at the same time has high thermal conductivity and heat dissipation. Therefore, metal nanoparticle pastes containing silver-containing metal nanoparticles and terpene alcohols are excellent in reflectivity and thermal conductivity. For example, by coating on the circuit board surface, it is excellent in circuit boards. It is suitable as a bonding material for bonding an electronic component such as an LED element.
- the metal nanoparticle paste of the present invention is a mixture containing (A) metal nanoparticles, (B) a protective film covering the surface of the metal nanoparticles, (C) carboxylic acids, and (D) a dispersion medium. is there.
- the metal nanoparticle which is a component (A) is metal powder which has an average primary particle diameter of nano order.
- the metal species of the metal nanoparticles are not particularly limited as long as they have good conductivity and can cover the protective film (B) described later.
- tin and copper are preferable from the viewpoint of environmental load, cost, and prevention of migration phenomenon.
- the metal species is preferably silver from the viewpoint of obtaining a high-luminance LED module.
- the upper limit of the average primary particle diameter of the metal nanoparticles is 100 nm from the viewpoint of low-temperature sintering characteristics, and is preferably 50 nm from the viewpoint of promptly promoting low-temperature sintering. 20 nm is particularly preferable from the viewpoint of forming a wiring pattern.
- the lower limit of the average primary particle diameter of the metal nanoparticles is 1 nm from the viewpoint of dispersion stability, preferably 2 nm from the viewpoint of low-temperature sinterability, and particularly preferably 3 nm from the viewpoint of production stability. These metal nanoparticles may be used alone or in combination of two or more.
- the protective film covering the surface of the metal nanoparticle that is the component (B) can be obtained by (A) This is for preventing fusion and giving the metal nanoparticles uniform dispersion in the dispersion medium, that is, dispersion stability.
- the component of the protective film is not particularly limited as long as it is a compound that coats the surface of the metal nanoparticle and exhibits uniform dispersibility for the metal nanoparticle in the dispersion medium, for example, the metal nanoparticle and the lone electron pair. And an organic compound having a group containing an oxygen atom, a nitrogen atom, or a sulfur atom that can form a coordinate bond with each other.
- oxygen atom, nitrogen atom, or sulfur atom is bonded to the surface of the metal nanoparticle by intermolecular force due to electrostatic force, so that the protective film covers the metal nanoparticle.
- organic compound since the organic compound has an affinity with a dispersion medium such as an organic solvent, it can have dispersion stability.
- groups containing oxygen atoms include hydroxy groups (—OH) and oxy groups (—O—)
- examples of groups containing nitrogen atoms include amino groups (—NH 2 )
- groups containing sulfur atoms include a sulfanyl group (—SH).
- the organic compound that is a constituent component of the protective film is an oxygen compound that can be coordinated by a metal nanoparticle and a lone electron pair from the viewpoint of thermal stability at room temperature and dispersibility of the metal nanoparticle.
- An organic compound having a group containing an atom, nitrogen atom or sulfur atom and having a saturated or unsaturated hydrocarbon group having 2 to 20 carbon atoms is preferred, and coordination by metal nanoparticles and lone electron pairs is particularly preferred.
- Examples of the organic compound that is a constituent component of the protective film described above include sugar alcohol and fatty acid ester.
- Sugar alcohol is not particularly limited, for example, intramolecular dehydration of glycerin, sorbitol and sorbitol, intramolecular dehydration of mannitol and mannitol, intramolecular dehydration of xylitol and xylitol, and intramolecular dehydration of erythritol and erythritol Can be mentioned.
- the fatty acid is not particularly limited, and examples thereof include butyric acid, caproic acid, enanthic acid, caprylic acid, capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, and oleic acid.
- examples of the sugar alcohol fatty acid ester include the following general formula (I):
- R 1 , R 2 and R 3 each independently represents a monovalent group having 2 to 20 carbon atoms, which represents a saturated hydrocarbon group or an unsaturated hydrocarbon group).
- Specific examples of the sugar alcohol fatty acid ester of the above general formula (I) include the following formula (I-1):
- the organic compound that is a constituent of the protective film includes, for example, the following general formula (IV):
- R 6 is a monovalent group having 2 to 20 carbon atoms and represents a saturated hydrocarbon group or an unsaturated hydrocarbon group
- specific examples of the amine include Formula (IV-1) below
- the compound represented by can be mentioned.
- the upper limit of the coating amount of the protective film on the metal nanoparticles is 30 parts by mass with respect to 100 parts by mass of the metal nanoparticles from the viewpoint of preventing increase in conduction resistance value, and 20 parts by mass from the viewpoint of low-temperature sinterability. preferable.
- the lower limit of the coating amount of the protective film on the metal nanoparticles is 5 parts by mass with respect to 100 parts by mass of the metal nanoparticles from the viewpoint of maintaining the dispersion stability of the metal nanoparticles at room temperature. 10 mass parts is preferable at the point which makes it more reliable.
- These protective film components may be used alone or in combination of two or more.
- covered with the protective film which is a component is not specifically limited,
- the metal and alloy fine particle colloid which has a uniform size and shape can be manufactured easily, and tin, copper, and nickel
- the active continuous interfacial deposition method described in Patent Document 3 is preferable in that even a base metal that is easily oxidized can be made into nanoparticles in a pure metal state.
- a rotary vacuum chamber that stores a liquid medium in a lower part, an evaporation structure of a metal material disposed inside the rotary vacuum chamber, and the rotary vacuum chamber around a central axis of the vacuum chamber.
- a device composed of a variable speed rotating mechanism that rotates at a constant speed is used.
- the active continuous interface deposition method is a predetermined amount of a solution (for example, an alkylnaphthalene solution) in which 10% by mass of a constituent component of a protective film (for example, sorbitan fatty acid ester) is blended in a rotary vacuum chamber ( For example, 200 ml) is loaded, and a predetermined amount (for example, 10 g) of a metal lump as a raw material for metal nanoparticles is loaded into a resistance heating evaporation source.
- a solution for example, an alkylnaphthalene solution
- a protective film for example, sorbitan fatty acid ester
- the rotary vacuum chamber is evacuated while rotating at a predetermined rotational speed (for example, 100 mm / s), the resistance heating evaporation source is heated in a vacuum of 5 ⁇ 10 ⁇ 5 Torr, and metal vapor is supplied at a predetermined speed ( E.g. 0.2 g / min). Under this condition, by operating for a predetermined time (for example, 120 minutes), the metal lump almost disappears, the evaporated metal is adsorbed to the solution, and a colloid of metal nanoparticles can be obtained at the bottom of the rotary vacuum chamber. .
- a solution for example, a cyclohexane solution
- Carboxylic acids (C) The carboxylic acids as the component (C) coat the metal nanoparticles under a predetermined heating condition, that is, under a heating temperature lower than the inherent melting point of the metal constituting the metal nanoparticles. By reacting with the protective film, the protective film is separated from the surface of the metal nanoparticles, and the function as the protective film is lost. When the protective film is separated from the surface of the metal nanoparticles under the above heating conditions, the metal nanoparticles are aggregated and sintered together. That is, the carboxylic acid functions as a protective membrane separating agent.
- carboxylic acids react with a group containing an oxygen atom, a nitrogen atom, or a sulfur atom that can coordinately bond a metal nanoparticle with a lone electron pair of an organic compound that is a constituent of a protective film.
- the sugar alcohol fatty acid ester of the general formula (I) when taken as an example of a constituent of the protective film, the carboxyl group of the carboxylic acid reacts with the hydroxy group of the sugar alcohol that has been dehydrated in the molecule and is esterified. As a result, the bond due to the intermolecular force between the sugar alcohol fatty acid ester and the metal nanoparticles caused by the hydroxy group of the sugar alcohol is broken, and the protective film is separated from the surface of the metal nanoparticles.
- the amine of the general formula (IV) when taken as an example of the constituent component of the protective film, the amine group reacts with the carboxyl group of the carboxylic acid to be amidated, resulting in an amine / metal attributed to the amino group.
- the bond due to the intermolecular force between the nanoparticles is broken, and the protective film is separated from the surface of the metal nanoparticles.
- the carboxylic acids that can be blended in the metal nanoparticle paste are not particularly limited as long as they are organic compounds having a carboxyl group, such as monocarboxylic acids and their anhydrides, dicarboxylic acids and their anhydrides, tricarboxylic acids and their anhydrides.
- monocarboxylic acid for example, general formula (II)
- R 4 is a monovalent group having 6 to 10 carbon atoms and represents a saturated hydrocarbon group or an unsaturated hydrocarbon group.
- saturated fatty acids such as heptanoic acid, octanoic acid, nonanoic acid and decanoic acid and anhydrides of the above saturated fatty acids, unsaturated fatty acids such as trans-3-hexenoic acid and 2-nonenoic acid, and Saturated fatty acid anhydrides can be mentioned, and nonanoic acid is preferred from the viewpoint of smooth protective membrane separation ability.
- saturated fatty acids such as heptanoic acid, octanoic acid, nonanoic acid and decanoic acid and anhydrides of the above saturated fatty acids
- unsaturated fatty acids such as trans-3-hexenoic acid and 2-nonenoic acid
- Saturated fatty acid anhydrides can be mentioned, and nonanoic acid is preferred from the viewpoint of smooth protective membrane separation ability.
- dicarboxylic acid include general
- R 5 represents a divalent group having 1 to 12 carbon atoms which may have an ether bond.
- Specific examples include glutaric acid, adipic acid, suberic acid, diglycolic acid, succinic acid, phthalic acid, and anhydrides and derivatives of each of the above acids. From the viewpoint of performance, diglycolic acid, diglycolic anhydride, and succinic anhydride are preferred.
- Examples of tricarboxylic acid include citric acid, isocitric acid, aconitic acid and the like.
- the upper limit of the compounding amount of the carboxylic acids is 300 parts by mass with respect to 100 parts by mass of the metal nanoparticles coated with the protective film from the viewpoint of preventing the metal nanoparticles from being oxidized by the carboxylic acids, 200 mass parts is preferable from the point of ensuring a metal ratio.
- the lower limit of the compounding amount of the carboxylic acids is 30 parts by mass from the viewpoint of reliably separating the protective film from the surface of the metal nanoparticles with respect to 100 parts by mass of the metal nanoparticles coated with the protective film, and is conductive. 40 mass parts is preferable from the point which stabilizes.
- These carboxylic acids may be used alone or in combination of two or more.
- the dispersion medium (D) component adjusts the viscosity of the metal nanoparticle paste and functions as a lubricant when the metal nanoparticles move through the metal nanoparticle paste during low-temperature sintering. It is.
- dispersion medium examples include saturated or unsaturated aliphatic hydrocarbons such as decane, tetradecane, and octadecane; ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; methyl cellosolve; Glycol ethers such as ethyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monoethyl ether; ethyl acetate, acetic acid Butyl, cellosolve acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether Esters such as cetate, propyl
- terpene alcohols such as monoterpene alcohol, sesquiterpene alcohol, and diterpene alcohol may be used as a dispersion medium.
- the use of the above-mentioned terpene alcohol dispersion medium enables the formation of a coating film having excellent conductivity and high reflectivity.
- a paste can be obtained.
- monoterpene alcohols include ⁇ -terpineol, ⁇ -terpineol, ⁇ -terpineol, ⁇ -terpineol, manool, borneol, terbinen-4-ol, and 1-hydroxy-p-menthane and 8-hydroxy-p-menthane.
- dihydroterpineol examples of sesquiterpene alcohols include catolol, cedrol, nerolidol, patchoulol, ⁇ -bisabolol, viridiflorol, and casinodal.
- These dispersion media are preferably organic solvents having a flash point of 50 ° C. or higher and a boiling point of 150 ° C. or higher from the viewpoint of being able to be stably stored at room temperature and suppressing transpiration during low-temperature sintering, for example, hexyl diglycol. be able to.
- the protective film (B) is an organic solvent having a boiling point equal to or higher than the temperature at which the protective film is separated from the surface of the metal nanoparticles, for example, 250 ° C. or higher. Examples include squalane and tetradecane having a boiling point.
- the blending amount of the dispersion medium can be appropriately blended according to the desired viscosity, but is, for example, 1 to 300 parts by weight with respect to 100 parts by weight of the metal nanoparticles coated with the protective film, and the coating film is cracked. 20 to 200 parts by mass is preferable from the viewpoint of preventing the above.
- the viscosity of the metal nanoparticle paste in the B-type viscometer is, for example, 5 Pa ⁇ s to 400 Pa ⁇ s at 25 ° C., and preferably 20 Pa ⁇ s to 300 Pa ⁇ s at 25 ° C. from the viewpoint of coating workability.
- 50 Pa ⁇ s to 200 Pa ⁇ s at 25 ° C. is particularly preferable from the viewpoint of application by a dispenser and a function as a lubricant.
- these dispersion media may be used independently and may mix and use 2 or more types.
- additives may be appropriately blended depending on the application.
- additives include gloss imparting agents, metal corrosion inhibitors, stabilizers, fluidity improvers, dispersion stabilizers, thickeners, viscosity modifiers, humectants, thixotropic agents, antifoaming agents, and bactericides.
- An agent, a filler, etc. can be mentioned.
- These additives may be used alone or in combination of two or more.
- the method for producing the metal nanoparticle paste is not particularly limited.
- the metal nanoparticles coated with a protective film produced by a predetermined production method for example, active continuous interface deposition method
- carboxylic acids are added and dispersed.
- the metal nanoparticle paste of the present invention can be used for various applications.
- the metal nanoparticle paste of the present invention contains metal nanoparticles at a high density, and has a temperature lower than the melting point of the metal nanoparticles (for example, about 150 to 200 ° C. for tin, 250 to 350 ° C. for silver and copper). Degree), that is, low-temperature sinterability, for example, a conductive bonding material for electrically and physically bonding electronic components to a wiring board, a film material for forming a conductive film, There is an application as a wiring material for forming a wiring pattern on a substrate.
- the metal nanoparticle paste When used as a conductive bonding material, the metal nanoparticle paste is applied to the position where the electronic components on the wiring board are bonded, and after placing the electronic components on the applied metal nanoparticle paste film, firing treatment is performed, Electronic components are bonded on the wiring board.
- the method for applying the metal nanoparticle paste is not particularly limited, and examples thereof include a screen printing method and a dispenser method.
- the coating amount of the metal nanoparticle paste can be adjusted as appropriate. For example, it is applied at a thickness of 1 to 20 ⁇ m.
- the firing temperature is not particularly limited as long as the protective film covering the surface of the metal nanoparticles is separated from the metal nanoparticles and the metal nanoparticles are fused to each other and sintered at a low temperature.
- the temperature is 150 to 200 ° C., preferably 150 to 170 ° C., and the metal nanoparticles are copper or silver
- the temperature is 250 to 350 ° C., preferably 280 to 320 ° C.
- the firing time can be selected as appropriate, and is, for example, 5 to 120 minutes.
- the material of the wiring board to be used is not particularly limited, and in addition to inorganic materials such as glass and metal oxides, the metal nanoparticle paste of the present invention has low-temperature sinterability, so it has higher heat resistance than inorganic materials.
- Organic materials such as polyester resins, polycarbonate resins, styrene resins, and fluororesins, which are inferior, can also be used.
- the electronic component can be bonded to a fine region on the wiring board.
- the metal nanoparticle paste of the present invention can be bonded even to a 0402 chip or a mounting area with a narrow pitch of 0.3 mm or less, which causes a problem of variations in the printing supply amount with conventional solder.
- a desired wiring pattern is drawn on a substrate with a metal nanoparticle paste, and the drawn wiring pattern is baked to form a sintered wiring pattern on the substrate.
- the coating method of the metal nanoparticle paste is not particularly limited as long as it is a coating method capable of forming a wiring pattern, and examples thereof include a screen printing method and an ink jet printing method.
- substrate which can be used are the same as that of the case where it uses as above-mentioned electroconductive joining material. This method of use can be applied to the formation of a fine wiring pattern by utilizing the fact that the metal particles are nano-sized.
- the metal nanoparticle paste of the present invention uses silver-containing metal nanoparticles and a terpene alcohol dispersion medium, it is possible to form a coating film having excellent conductivity and high reflectance. It can also be used as a reflective coating / bonding material when manufacturing LED modules by bonding LED elements to a paste-coated circuit board using a die bonder.
- Coated metal nanoparticle Metal nanoparticle coated with conductive material / protective film (hereinafter referred to as “coated metal nanoparticle”)
- Coated metal nanoparticle I In the above-mentioned active continuous interface deposition method A tin nanoparticle coated with a protective film comprising a sorbitan fatty acid ester of the formula (I-1).
- Coated metal nanoparticles II Tin nanoparticles coated with a protective film made of oleylamine of the formula (IV-1) by the above active continuous interface vapor deposition method.
- Coated metal nanoparticles III Silver nanoparticles coated with a protective film comprising a sorbitan fatty acid ester of the formula (I-1) by the above active continuous interface deposition method.
- Coated metal nanoparticles IV Copper nanoparticles coated with a protective film made of sorbitan fatty acid ester of formula (I-1) by the above-mentioned active continuous interface deposition method. From the thermal analysis (TG-DTA method), the content of the protective film component of the coated metal nanoparticles I to IV was 20% by mass. ⁇ About metal powder SAC305 solder powder: manufactured by Tamura Seisakusho Co., Ltd., manufactured by centrifugal atomization method. Dry powdered tin nanoparticles: those without a protective film. "Tin nanopowder" manufactured by Aldrich
- a predetermined amount of cyclohexane dispersion obtained by the active continuous interface vapor deposition method and containing 20% by mass of coated metal nanoparticles is charged into an agate mortar. All the cyclohexane components were volatilized by drying under reduced pressure to obtain coated metal nanoparticles having a protective film component of 20% by mass.
- a metal nanoparticle paste to be used as a conductive bonding material was prepared by adding a predetermined amount of carboxylic acid and a predetermined amount of solvent to the coated metal nanoparticles and mixing them for 5 minutes using a pestle.
- the metal nanoparticle pastes of Examples 1 to 11 and Comparative Examples 1 to 6 were prepared by blending the components shown in Table 1 below in the proportions shown in Table 1 below using the method for preparing the conductive bonding material. Was prepared.
- the blending amount shown in Table 1 below represents mass%.
- Chip conduction resistance On a glass epoxy substrate having a copper foil land formed on the surface, the metal nanoparticle paste prepared as described above was printed with a metal squeegee using a 200 ⁇ mt metal mask, Using a chip mounter manufactured by YAMAHA, a tin-plated 1608CR chip having a resistance value of 0 ⁇ was mounted.
- Examples 1 to 8 and Comparative Examples 1 and 3 to 4 in which coated metal nanoparticles with a metal species of tin are blended Comparative Example 2 in which dry powdered tin nanoparticles are blended, and Comparative Example 5 in which SAC305 solder powder is blended 6 and Examples in which coated metal nanoparticles of tin as a metal species, coated metal nanoparticles of a silver species as silver, and coated metal nanoparticles as a metal species are blended so as to have the same composition as the SAC305 solder powder 11 is the reflow profile of FIG.
- Examples 9 to 10 in which the metal species is coated with silver or copper coated metal nanoparticles are the reflow profiles of FIG.
- a test piece was prepared by joining the 1608CR chip placed on the glass epoxy substrate in the following example. With respect to this test piece, the shear strength of the 1608 CR chip was measured under the condition of 5 mm / min using a tensile tester (EZ-L manufactured by SHIMADZU Co., Ltd.). The measurement result is an average value of ten 1608CR chips whose shear strength was measured. (3) Surface state (1) About the joined body produced by the same method as the chip conduction resistance, the joint between the substrate and the chip was visually observed.
- A Metallic luster and smooth surface.
- ⁇ Although there is a metallic luster, the surface is not smooth.
- ⁇ There is not much metallic luster, and there are irregularities and air bubbles on the surface.
- X There is no metallic luster and there is no change before heating.
- shear strength in Table 2 “not measurable” means that the shear strength could not be measured because the 1608 CR chip could not be bonded onto the glass epoxy substrate.
- metal nanoparticle pastes (Examples 1 to 4 and 6 to 10) containing metal nanoparticles coated with sorbitan fatty acid ester film and carboxylic acids, and metal nanoparticles coated with oleylamine film
- the chip conduction resistance value was lowered, and a bonded portion having excellent conductivity could be obtained.
- the shear strength of the chip bonded on the substrate was increased, the mechanical strength of the bonded portion was improved, and the surface condition of the bonded portion was also good.
- Example 11 even when the coated metal nanoparticle is a mixed product of three kinds of metal species of the metal nanoparticle, a joint having excellent conductivity can be obtained, and the surface state of the joint is also good. Met.
- Example 11 compared with Examples 1 to 10, the shear strength of the chip was particularly increased and the mechanical strength of the joint was further improved.
- the metal nanoparticle paste coated with the protective film was not blended with the carboxylic acid as the protective film separating agent, and from Comparative Examples 3 and 4, the metal nanoparticles coated with the protective film If a carboxylic acid is not blended as a protective membrane separating agent in the paste (combining an amine in Comparative Example 3 and a halogen-based activator in Comparative Example 4), the bonding itself becomes insufficient, and the electrical conductivity of the bonded portion was also not recognized. Furthermore, the surface state of the joint was also poor.
- Comparative Examples 2 and 6 even when a carboxylic acid is blended in a paste using metal nanoparticles not coated with a protective film or conventional solder powder, the chip conduction resistance is high, and the conductivity of the joint is inferior. It was. In Comparative Examples 2, 5, and 6, as in Comparative Examples 1, 3, and 4, the bonding was insufficient and the surface state of the bonded portion was also poor.
- metal nanoparticle paste Compounding component of metal nanoparticle paste
- the conductive material-coated metal nanoparticle III and the coated metal nanoparticle IV are the same as the examples using the above-described metal nanoparticle paste as the conductive bonding material.
- Metal nanoparticles VI are those without a protective film.
- a predetermined amount of cyclohexane dispersion obtained by the above active continuous interface vapor deposition containing 20% by mass of coated metal nanoparticles is put into an agate mortar and dried under reduced pressure. As a result, all cyclohexane components were volatilized to obtain coated metal nanoparticles having a protective film component of 20% by mass.
- a metal nanoparticle paste to be used as a wiring material was prepared by adding a predetermined amount of carboxylic acid and a predetermined amount of solvent to the coated metal nanoparticles and mixing for 5 minutes using a pestle.
- the conductive material / coated metal nanoparticle III is the same as the coated metal nanoparticle III of the example using the metal nanoparticle paste described above as a conductive bonding material.
- ⁇ Silver powder is "AgC-A" manufactured by Fukuda Metals.
- Dispersion medium terpineol C: a mixture of ⁇ -terpineol, ⁇ -terpineol and ⁇ -terpineol manufactured by Nippon Terpene Co., Ltd. Existing chemical number 3-2323, CAS. No. 8000-41-7, purity 85% by mass or more. Dihydroterpineol: a mixture of 1-hydroxy-p-menthane and 8-hydroxy-p-menthane manufactured by Nippon Terpene Co., Ltd. Existing chemical number 3-2315, CAS. No. 498-81-7, purity 96% by mass or more.
- the reflectance of the metal coating film at 450 nm was measured using a spectrophotometer “Hitachi spectrophotometer U-4100” manufactured by Hitachi High-Tech Co., Ltd. Further, the maximum value of the reflectance in the range of 250 to 800 ⁇ m was also measured. Reflectance was measured in both Examples and Comparative Examples using a YAG laser with an incident angle of 10 °, and incident with alumina as a reference sample (“standard white plate made of aluminum oxide” manufactured by Hitachi High-Tech Co., Ltd.). The total light relative reflectance was measured when the reflectance at an angle of 10 ° was 100.
- (6) State of coating film The metal coating film formed by the same method as in the above (5) was visually observed. A metal coating film that was uniformly coated without cracking was evaluated as “uniform”, and a metal coating film that was cracked and not suitable for practical use was evaluated as “cracking”.
- the volume resistance was measured by the same method as in (4) above, and the shear strength of the chip resistor component was measured by the same method as in (2) above.
- the coated metal nanoparticles have a low volume resistance value and a high reflectance, and are excellent in the shear strength of the chip resistance component.
- a membrane could be obtained.
- Examples 15 to 19 and Comparative Examples 8 and 9 by using terpene alcohols as the dispersion medium, it was possible to improve the reflectance while preventing cracking of the coating film.
- the reflectance of the coating film could be further improved by setting the firing atmosphere to air instead of inert gas. Further, from Examples 15 to 17 and 19, it was possible to further improve the reflectance of the coating film by setting the heating temperature to 250 ° C., particularly 300 ° C.
- the metal nanoparticle paste of the present invention can electrically bond a substrate and an electronic component by a heat treatment at a temperature lower than the melting point of the metal nanoparticles, and can form a wiring pattern on the substrate by the low temperature heat treatment.
- metal nanoparticle pastes containing silver-containing metal nanoparticles and terpene alcohols are excellent in reflectivity and thermal conductivity. As the utility value is high.
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Abstract
Description
(A)成分である金属ナノ粒子は、ナノオーダーの平均一次粒子径を有する金属粉である。ナノオーダーの平均一次粒子径を有することで、比表面積が大きく粒子表面の反応活性が高くなるので、金属本来の融点よりもはるかに低い加熱温度で、電子部品を基板に電気的に接合でき、また基板上に配線パターンを形成できる。金属ナノ粒子の金属種は、良導電性を有し、後述する(B)成分である保護膜を被覆できるものであれば特に限定されず、例えば、金、銀、銅、白金、パラジウム、ニッケル、ビスマス、鉛、インジウム、スズ、亜鉛、チタン、アルミニウム及びアンチモンなど、はんだに使用される金属単体や上記金属種を含有する金属合金を挙げることができる。上記金属種のうち、環境への負荷、コスト及びマイグレーション現象の発生防止の点からスズ、銅が好ましい。
(B)成分である金属ナノ粒子の表面を被覆する保護膜は、(A)金属ナノ粒子表面の反応活性が高いことによる金属ナノ粒子相互の融着を防止して、金属ナノ粒子に分散媒中における均一な分散、すなわち分散安定性を与えるためのものである。前記保護膜の構成成分は、金属ナノ粒子表面を被覆して、分散媒中で金属ナノ粒子に均一な分散性を発揮させる化合物であれば特に限定されず、例えば、金属ナノ粒子と孤立電子対による配位的な結合が可能である、酸素原子、窒素原子または硫黄原子を含んだ基を有する有機化合物を挙げることができる。上記した酸素原子、窒素原子または硫黄原子が静電力に起因した分子間力により金属ナノ粒子表面に結合することにより、保護膜が金属ナノ粒子を被覆する。また、有機化合物は有機溶媒等の分散媒と親和性を有するので、分散安定性を有することができる。さらに、酸素原子を含んだ基の例としてヒドロキシ基(-OH)やオキシ基(-O-)、窒素原子を含んだ基の例としてアミノ基(-NH2)、硫黄原子を含んだ基の例としてスルファニル基(-SH)を挙げることができる。
(C)成分であるカルボン酸類は、所定の加熱条件下、すなわち金属ナノ粒子を構成する金属の固有の融点よりも低い加熱温度の条件下、金属ナノ粒子を被覆している保護膜と反応することで、金属ナノ粒子の表面から保護膜を離して、保護膜としての機能を失わせるものである。上記加熱条件下、保護膜が金属ナノ粒子の表面から離れることで、金属ナノ粒子が相互に凝集し、焼結する。すなわち、カルボン酸類は、保護膜分離剤として機能する。例えば、カルボン酸類は、保護膜の構成成分である有機化合物の、金属ナノ粒子と孤立電子対による配位的な結合が可能である、酸素原子、窒素原子または硫黄原子を含んだ基と反応する。
(D)成分である分散媒は、金属ナノ粒子ペーストの粘度を調整するとともに、低温焼結時に金属ナノ粒子が金属ナノ粒子ペースト中を移動する際の潤滑剤として機能するものである。分散媒の例としては、デカン、テトラデカン、オクタデカン等の飽和または不飽和脂肪族炭化水素類、メチルエチルケトン、シクロヘキサノンなどのケトン類;トルエン、キシレン、テトラメチルベンゼンなどの芳香族炭化水素類;メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジプロプレングリコールモノエチルエーテル、トリエチレングリコールモノエチルエーテルなどのグリコールエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ジエチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート及び上記グリコールエーテル類のエステル化物などのエステル類;エタノール、プロパノール、エチレングリコール、プロピレングリコール、ヘキシルジグリコールなどのアルコール類、スクアランなど炭素数30以上の不飽和炭化水素類等を挙げることができる。
以下に、本発明の金属ナノ粒子ペーストを導電性接合材料として使用した実施例を説明する。
導電性材料
・保護膜で被覆された金属ナノ粒子(以下、「被覆金属ナノ粒子」と表す)について
被覆金属ナノ粒子I:上記活性連続界面蒸着法にて、スズナノ粒子に式(I-1)のソルビタン脂肪酸エステルからなる保護膜を被覆したもの。
被覆金属ナノ粒子II:上記活性連続界面蒸着法にて、スズナノ粒子に式(IV-1)のオレイルアミンからなる保護膜を被覆したもの。
被覆金属ナノ粒子III:上記活性連続界面蒸着法にて、銀ナノ粒子に式(I-1)のソルビタン脂肪酸エステルからなる保護膜を被覆したもの。
被覆金属ナノ粒子IV:上記活性連続界面蒸着法にて、銅ナノ粒子に式(I-1)のソルビタン脂肪酸エステルからなる保護膜を被覆したもの。
熱分析(TG-DTA法)より、上記被覆金属ナノ粒子I~IVの保護膜成分の含有量はいずれも20質量%であった。
・金属粉について
SAC305はんだ粉:(株)タムラ製作所製、遠心アトマイズ法により作製。
乾粉スズナノ粒子:保護膜による被膜の無いもの。アルドリッチ(株)製、「Tin nanopowder」
上記活性連続界面蒸着法により得られた、被覆金属ナノ粒子を20質量%含有したシクロヘキサン分散液を、メノウ乳鉢に所定量投入し減圧乾燥によりシクロヘキサン分を全て揮発させて保護膜成分を20質量%有した被覆金属ナノ粒子を得た。この被覆金属ナノ粒子に、所定量のカルボン酸類と所定量の溶剤とを加え、乳棒を用いて5分間混合することで導電性接合材料として使用する金属ナノ粒子ペーストを調製した。
(一)チップ導通抵抗
表面に銅箔ランドが形成されたガラスエポキシ基板上に、上記のように調製した金属ナノ粒子ペーストを200μmtのメタルマスクを用いてメタルスキージで印刷し、YAMAHA(株)製チップマウンターを用いて抵抗値が0Ωであるスズめっきの1608CRチップを搭載した。そして、リフロー加熱(金属種がスズの被覆金属ナノ粒子を配合した実施例1~8と比較例1、3~4、乾粉スズナノ粒子を配合した比較例2、SAC305はんだ粉を配合した比較例5~6、並びにSAC305はんだ粉と同様の組成となるように、金属種がスズの被覆金属ナノ粒子、金属種が銀の被覆金属ナノ粒子及び金属種が銅の被覆金属ナノ粒子を配合した実施例11は、図1に示すリフロープロファイル(リフロー加熱時の酸素濃度は50ppm以下)、金属種が銀または銅の被覆金属ナノ粒子を配合した実施例9~10は、図2に示すリフロープロファイル(リフロー加熱時の酸素濃度は50ppm以下))にてガラスエポキシ基板上に搭載した1608CRチップを接合し、この接合体の導通抵抗の値を、岩通計測(株)製マイクロメーターを用いて測定した。
(二)チップ抵抗部品のせん断強度
表面に銅箔ランドが形成されたガラスエポキシ基板上に、上記のように調製した金属ナノ粒子ペーストを150μmtのメタルマスクを用いてメタルスキージで印刷し、スズめっきの1608CRチップを銅箔ランドの印刷膜上に10個載置した。そして、リフロー加熱(金属種がスズの被覆金属ナノ粒子を配合した実施例1~8と比較例1、3~4、乾粉スズナノ粒子を配合した比較例2、SAC305はんだ粉を配合した比較例5~6、並びにSAC305はんだ粉と同様の組成となるように、金属種がスズの被覆金属ナノ粒子、金属種が銀の被覆金属ナノ粒子及び金属種が銅の被覆金属ナノ粒子を配合した実施例11は、図1のリフロープロファイル(リフロー加熱時の酸素濃度は50ppm以下)、金属種が銀または銅の被覆金属ナノ粒子を配合した実施例9~10は、図2のリフロープロファイル(リフロー加熱時の酸素濃度は50ppm以下))にてガラスエポキシ基板上に載置した1608CRチップを接合して試験片を作製した。この試験片について、引張り試験機(SHIMADZU(株)製EZ-L)を用いて、5mm/minの条件で1608CRチップのせん断強度を測定した。なお、測定結果は、せん断強度を測定した10個の1608CRチップの平均値である。
(三)表面状態
上記(一)チップ導通抵抗と同様の方法にて作製した接合体について、基板・チップ間の接合部を目視にて観察した。評価は、下記4段階で行なった。
◎:金属光沢があり、表面が滑らかである。
○:金属光沢があるが、表面は滑らかではない。
△:金属光沢があまり無く、表面に凸凹と空泡有り。
×:金属光沢が無く加熱前と変化が無い。
以下に、本発明の金属ナノ粒子ペーストを配線材料として使用した実施例を説明する。
導電性材料
被覆金属ナノ粒子III、被覆金属ナノ粒子IVは、上記した金属ナノ粒子ペーストを導電性接合材料として使用した実施例と同様である。
金属ナノ粒子VIは、保護膜による被膜の無いもの。
上記活性連続界面蒸着法により得られた、被覆金属ナノ粒子を20質量%含有したシクロヘキサン分散液を、メノウ乳鉢に所定量投入し減圧乾燥によりシクロヘキサン分を全て揮発させて保護膜成分を20質量%有した被覆金属ナノ粒子を得た。この被覆金属ナノ粒子に、所定量のカルボン酸類と所定量の溶剤とを加え、乳棒を用いて5分間混合することで配線材料として使用する金属ナノ粒子ペーストを調製した。
下記表3に示す配合量は質量%を表す。
(四)体積抵抗
スライドガラス上に、上記のように調製した金属ナノ粒子ペーストをスクリーン印刷で長さ5cm×幅1cm塗布し、下記表4に示す焼成条件(図2にリフロープロファイルを示す)にて塗膜を焼成後、膜厚を測定し、岩通計測(株)製マイクロメーターを用いて抵抗値を測定することにより、体積抵抗(比抵抗)値を算出した。
以下に、本発明の金属ナノ粒子ペーストについて、高反射率を有する塗膜・接合用材料として使用した実施例を説明する。
導電性材料
・被覆金属ナノ粒子IIIは、上記した金属ナノ粒子ペーストを導電性接合材料として使用した実施例の被覆金属ナノ粒子IIIと同様である。
・銀粉は、福田金属(株)製、「AgC-A」。
・ターピネオールC:日本テルペン(株)製、α-テルピネオール、β-テルピネオール及びγ-テルピネオールの混合物。既存化学物質番号3-2323、CAS.No.8000-41-7、純度85質量%以上。
・ジヒドロターピネオール:日本テルペン(株)製、1-ヒドロキシ-p-メンタン及び8-ヒドロキシ-p-メンタンの混合物。既存化学物質番号3-2315、CAS.No.498-81-7、純度96質量%以上。
上記活性連続界面蒸着法により得られた、被覆金属ナノ粒子を20質量%含有したシクロヘキサン分散液を、メノウ乳鉢に所定量投入し減圧乾燥によりシクロヘキサン分を全て揮発させて保護膜成分を20質量%有した被覆金属ナノ粒子を得た。この被覆金属ナノ粒子に、所定量のカルボン酸類と所定量の溶剤とを加え、乳棒を用いて5分間混合することでLED素子の基板への接合材料として使用する金属ナノ粒子ペーストを調製した。
(五)反射率
6cm×3cmのスライドガラス上に、上記のように調製した金属ナノ粒子ペーストを200μmtのメタルマスクを用いてメタルスキージで印刷した。印刷後、下記表6に示す焼成条件にて加熱(金属種が銀の被覆金属ナノ粒子を配合した実施例15~19のうちの実施例15、18、19と比較例8~10は図2に示すリフロープロファイル、実施例16は図3に示すリフロー加熱プロファイル、実施例17は図4に示すリフロー加熱プロファイル)して、スライドガラス上に3cm×2cmの金属塗膜を形成した。焼成した前記金属塗膜について、日立ハイテク(株)製の分光光度計「日立分光光度計U-4100」を用いて、450nmにおける金属塗膜の反射率を測定した。また、250~800μmの範囲における反射率の最大値もあわせて測定した。反射率の測定は、実施例、比較例ともに、YAGレーザーにて入射角10°として行なったものであり、アルミナを基準試料(日立ハイテク(株)製「酸化アルミニウム製標準白色板」)として入射角10°におけるその反射率を100とした場合の、全光相対反射率として測定した。
(六)塗膜の状態
上記(五)と同様の方法で形成した金属塗膜を目視にて観察した。金属塗膜にひび割れが生じずに均一に塗工されているものを「均一」、金属塗膜にひび割れが生じて実用に適しないものを「ひび割れ」と評価した。
Claims (16)
- (A)金属ナノ粒子と、(B)前記金属ナノ粒子の表面を被覆する保護膜と、(C)カルボン酸類と、(D)分散媒とを含むことを特徴とする金属ナノ粒子ペースト。
- 前記(A)金属ナノ粒子の平均一次粒子径が、1~100nmであることを特徴とする請求項1に記載の金属ナノ粒子ペースト。
- 前記(A)金属ナノ粒子が、金、銀、銅、白金、パラジウム、ニッケル、ビスマス、鉛、インジウム、スズ、亜鉛、チタン、アルミニウム及びアンチモンからなる群から選択された少なくとも一種の金属であることを特徴とする請求項1または2に記載の金属ナノ粒子ペースト。
- 前記(A)金属ナノ粒子が、金、銀、銅、白金、パラジウム、ニッケル、ビスマス、鉛、インジウム、スズ、亜鉛、チタン、アルミニウム及びアンチモンからなる群から選択された少なくとも一種の金属合金であることを特徴とする請求項1または2に記載の金属ナノ粒子ペースト。
- 前記(A)金属ナノ粒子がスズであり、前記スズの平均一次粒子径が1~50nmであることを特徴とする請求項1乃至4のいずれか1項に記載の金属ナノ粒子ペースト。
- 前記(B)金属ナノ粒子の表面を被覆する保護膜が、前記(A)金属ナノ粒子と孤立電子対による配位的な結合が可能である、酸素原子、窒素原子または硫黄原子を含んだ基を有する有機化合物を含むことを特徴とする請求項1に記載の金属ナノ粒子ペースト。
- 前記酸素原子を含んだ基がヒドロキシ基(-OH)またはオキシ基(-O-)、前記窒素原子を含んだ基がアミノ基(-NH2)、前記硫黄原子を含んだ基がスルファニル基(-SH)であることを特徴とする請求項6に記載の金属ナノ粒子ペースト。
- 前記(C)カルボン酸類が、モノカルボン酸若しくはその無水物、またはジカルボン酸若しくはその無水物であることを特徴とする請求項1に記載の金属ナノ粒子ペースト。
- 前記(A)金属ナノ粒子が銀を含んでおり、前記(D)分散媒がテルペンアルコール類であることを特徴とする請求項1に記載の金属ナノ粒子ペースト。
- 請求項1乃至13のいずれか1項に記載の金属ナノ粒子ペーストを用いて基板に電子部品を実装したことを特徴とする電子部品接合体。
- 請求項13に記載の金属ナノ粒子ペーストにて、基板にLED素子を接合したことを特徴とするLEDモジュール。
- 請求項1乃至13のいずれか1項に記載の金属ナノ粒子ペーストを用いてスクリーン印刷法またはインクジェット法によりプリント配線板上に電極及び配線パターンを形成し、250℃以上で加熱することにより前記配線パターンを焼成処理することを特徴とするプリント配線板の回路形成方法。
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KR1020127032833A KR101867978B1 (ko) | 2010-06-16 | 2011-06-02 | 금속 나노 입자 페이스트, 금속 나노 입자 페이스트를 이용한 전자 부품 접합체, led 모듈, 및 프린트 배선판의 회로 형성 방법 |
US13/704,581 US20130265735A1 (en) | 2010-06-16 | 2011-06-02 | Metal nanoparticle paste, electronic component assembly using metal nanoparticle paste, led module, and method for forming circuit for printed wiring board |
CN201180029624.0A CN103003891B (zh) | 2010-06-16 | 2011-06-02 | 金属纳米粒子糊 |
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CN103003891A (zh) | 2013-03-27 |
JP5811314B2 (ja) | 2015-11-11 |
KR20130107207A (ko) | 2013-10-01 |
CN103003891B (zh) | 2015-06-24 |
KR101867978B1 (ko) | 2018-06-15 |
TWI516556B (zh) | 2016-01-11 |
US20130265735A1 (en) | 2013-10-10 |
JP2012023014A (ja) | 2012-02-02 |
TW201207055A (en) | 2012-02-16 |
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