WO2011046021A1 - 炭化珪素基板の製造方法および炭化珪素基板 - Google Patents
炭化珪素基板の製造方法および炭化珪素基板 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 503
- 239000000758 substrate Substances 0.000 title claims abstract description 493
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 474
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 124
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 255
- 239000004065 semiconductor Substances 0.000 description 71
- 239000013078 crystal Substances 0.000 description 45
- 230000015556 catabolic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001294 propane Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- -1 and for example Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
Description
図1を参照して、本実施の形態における炭化珪素基板1は、炭化珪素からなるベース層10と、ベース層10上に接触して形成された中間層40と、単結晶炭化珪素からなり、中間層40上に接触して配置されたSiC層20とを備えている。そして中間層40は、少なくともベース層10に隣接する領域およびSiC層20に隣接する領域において炭化珪素を含み、ベース層10とSiC層20とを接合している。このベース層10に隣接する領域およびSiC層20に隣接する領域における炭化珪素は、非晶質であってもよい。
次に、本発明の他の実施の形態である実施の形態2について説明する。図5、図6および図1を参照して、実施の形態2における炭化珪素基板1は、基本的には実施の形態1における炭化珪素基板1と同様の構成を有し、同様の効果を奏する。しかし、実施の形態2における炭化珪素基板1は、SiC層20が平面的に見て複数並べて配置されている点において、実施の形態1の場合とは異なっている。
次に、上記本発明の炭化珪素基板を用いて作製される半導体装置の一例を実施の形態3として説明する。図8を参照して、本発明による半導体装置101は、縦型DiMOSFET(Double Implanted MOSFET)であって、基板102、バッファ層121、耐圧保持層122、p領域123、n+領域124、p+領域125、酸化膜126、ソース電極111および上部ソース電極127、ゲート電極110および基板102の裏面側に形成されたドレイン電極112を備える。具体的には、導電型がn型の炭化珪素からなる基板102の表面上に、炭化珪素からなるバッファ層121が形成されている。基板102としては、上記実施の形態1~2において説明した炭化珪素基板1を含む本発明の炭化珪素基板が採用される。そして、上記実施の形態1~2の炭化珪素基板1が採用される場合、バッファ層121は、炭化珪素基板1のSiC層20上に形成される。バッファ層121は導電型がn型であり、その厚みはたとえば0.5μmである。また、バッファ層121におけるn型の導電性不純物の密度はたとえば5×1017cm-3とすることができる。このバッファ層121上には耐圧保持層122が形成されている。この耐圧保持層122は、導電型がn型の炭化珪素からなり、たとえばその厚みは10μmである。また、耐圧保持層122におけるn型の導電性不純物の密度としては、たとえば5×1015cm-3という値を用いることができる。
Claims (15)
- 炭化珪素からなるベース基板(10)および単結晶炭化珪素からなるSiC基板(20)を準備する工程と、
前記ベース基板(10)の主面上に接触するように珪素からなるSi膜(30)を形成する工程と、
前記Si膜(30)上に接触するように前記SiC基板(20)を載置して、積層基板を作製する工程と、
前記積層基板を加熱することにより、少なくとも前記Si膜(30)において前記ベース基板(10)に接触する領域および前記SiC基板(20)に接触する領域を炭化珪素に変換して、前記ベース基板(10)と前記SiC基板(20)とを接合する工程とを備えた、炭化珪素基板(1)の製造方法。 - 前記積層基板を作製する工程よりも前に、前記積層基板を作製する工程において前記Si膜(30)を挟んで互いに対向する前記ベース基板(10)の主面および前記SiC基板(20)の主面の少なくともいずれか一方を平坦化する工程をさらに備えた、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記Si膜(30)を形成する工程では、厚さ10nm以上1μm以下の前記Si膜(30)が形成される、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記ベース基板(10)と前記SiC基板(20)とを接合する工程では、前記積層基板が炭素を含有するガスを含む雰囲気中において加熱される、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記積層基板を作製する工程では、前記SiC基板(20)は、平面的に見て複数並べて載置される、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記積層基板において、前記SiC基板(20)の前記ベース基板(10)とは反対側の主面(20A)は、{0001}面に対するオフ角が50°以上65°以下となっている、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記ベース基板(10)は単結晶炭化珪素からなり、
前記積層基板を作製する工程では、前記Si膜(30)を挟んで互いに対向する前記ベース基板(10)の主面の面方位と前記SiC基板(20)の主面の面方位とが一致するように、前記積層基板が作製される、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。 - 前記ベース基板(10)と前記SiC基板(20)とを接合する工程は、前記ベース基板(10)と前記SiC基板(20)とを接合する工程よりも前に、前記ベース基板(10)と前記SiC基板(20)とを接合する工程において互いに対向すべき前記ベース基板(10)および前記SiC基板(20)の主面を研磨することなく実施される、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 前記SiC基板(20)の、前記ベース基板(10)とは反対側の主面(20A)に対応する前記SiC基板(20)の主面(20A)を研磨する工程をさらに備えた、請求の範囲第1項に記載の炭化珪素基板(1)の製造方法。
- 炭化珪素からなるベース層(10)と、
前記ベース層(10)上に接触して形成された中間層(40)と、
単結晶炭化珪素からなり、前記中間層(40)上に接触して配置されたSiC層(20)とを備え、
前記中間層(40)は、少なくとも前記ベース層(10)に隣接する領域および前記SiC層(20)に隣接する領域において炭化珪素を含み、前記ベース層(10)と前記SiC層(20)とを接合している、炭化珪素基板(1)。 - 前記SiC層(20)は、平面的に見て複数並べて配置されている、請求の範囲第10項に記載の炭化珪素基板(1)。
- 前記ベース層(10)は単結晶炭化珪素からなり、
前記ベース層(10)のマイクロパイプは、前記SiC層(20)に伝播していない、請求の範囲第10項に記載の炭化珪素基板(1)。 - 前記SiC層(20)の前記ベース層(10)とは反対側の主面(20A)は、{0001}面に対するオフ角が50°以上65°以下となっている、請求の範囲第10項に記載の炭化珪素基板(1)。
- 前記ベース層(10)は単結晶炭化珪素からなり、
前記中間層(40)を挟んで互いに対向する前記ベース層(10)の主面の面方位と前記SiC層(20)の主面の面方位とは一致している、請求の範囲第10項に記載の炭化珪素基板(1)。 - 前記SiC層(20)の、前記ベース層(10)とは反対側の主面(20A)は研磨されている、請求の範囲第10項に記載の炭化珪素基板(1)。
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Application Number | Priority Date | Filing Date | Title |
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CA2759861A CA2759861A1 (en) | 2009-10-13 | 2010-09-29 | Method for manufacturing silicon carbide substrate and silicon carbide substrate |
EP10823289A EP2490247A1 (en) | 2009-10-13 | 2010-09-29 | Silicon carbide substrate manufacturing method and silicon carbide substrate |
JP2011536090A JPWO2011046021A1 (ja) | 2009-10-13 | 2010-09-29 | 炭化珪素基板の製造方法および炭化珪素基板 |
US13/258,907 US20120025208A1 (en) | 2009-10-13 | 2010-09-29 | Method for manufacturing silicon carbide substrate and silicon carbide substrate |
CN2010800236921A CN102449732A (zh) | 2009-10-13 | 2010-09-29 | 制造碳化硅衬底的方法和碳化硅衬底 |
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JP5343984B2 (ja) * | 2011-01-17 | 2013-11-13 | 株式会社デンソー | 化合物半導体基板およびその製造方法 |
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JP2014203833A (ja) * | 2013-04-01 | 2014-10-27 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
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US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN108369893B (zh) * | 2015-11-24 | 2022-07-19 | 住友电气工业株式会社 | 碳化硅单晶衬底、碳化硅外延衬底及制造碳化硅半导体器件的方法 |
JP6387375B2 (ja) * | 2016-07-19 | 2018-09-05 | 株式会社サイコックス | 半導体基板 |
CN108899369B (zh) * | 2018-06-27 | 2020-11-03 | 东南大学 | 一种石墨烯沟道碳化硅功率半导体晶体管 |
WO2021092862A1 (zh) * | 2019-11-14 | 2021-05-20 | 华为技术有限公司 | 半导体衬底及其制造方法、半导体器件 |
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JP2014007325A (ja) * | 2012-06-26 | 2014-01-16 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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EP2490247A1 (en) | 2012-08-22 |
CA2759856A1 (en) | 2011-04-21 |
US20120025208A1 (en) | 2012-02-02 |
CA2759861A1 (en) | 2011-04-21 |
TW201128773A (en) | 2011-08-16 |
KR20120022932A (ko) | 2012-03-12 |
US20120012862A1 (en) | 2012-01-19 |
WO2011046020A1 (ja) | 2011-04-21 |
JPWO2011046021A1 (ja) | 2013-03-07 |
TW201133587A (en) | 2011-10-01 |
CN102449733A (zh) | 2012-05-09 |
KR20120022952A (ko) | 2012-03-12 |
CN102449732A (zh) | 2012-05-09 |
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