WO2011040423A1 - 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法 - Google Patents
金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法 Download PDFInfo
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- WO2011040423A1 WO2011040423A1 PCT/JP2010/066877 JP2010066877W WO2011040423A1 WO 2011040423 A1 WO2011040423 A1 WO 2011040423A1 JP 2010066877 W JP2010066877 W JP 2010066877W WO 2011040423 A1 WO2011040423 A1 WO 2011040423A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
- C23G1/26—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions using inhibitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Definitions
- the present invention relates to a processing solution for suppressing pattern collapse of a metal microstructure and a method for producing a metal microstructure using the same.
- a photolithography technique is used as a method for forming and processing an element having a fine structure used in a wide field such as a semiconductor device or a circuit board.
- a wide field such as a semiconductor device or a circuit board.
- the miniaturization, high integration, and high speed of semiconductor devices have advanced remarkably, the resist pattern used for photolithography has become finer, and the aspect ratio has been increasing. I'm following.
- miniaturization or the like proceeds in this way, the collapse of the resist pattern becomes a big problem.
- the collapse of the resist pattern is caused by the surface tension of the processing solution when the processing solution used in the wet processing (mainly rinsing processing for washing away the developing solution) after developing the resist pattern is dried from the resist pattern. It is known that it is generated by the action of stress. Therefore, in order to solve the collapse of the resist pattern, a method of replacing the cleaning liquid with a low surface tension liquid using a nonionic surfactant, an alcohol-based solvent-soluble compound or the like and drying it (for example, Patent Documents 1 and 2). And a method of hydrophobizing the surface of the resist pattern (see, for example, Patent Document 3) has been proposed.
- metal fine structure a fine structure made of metal, metal nitride, metal oxide or the like formed by photolithography technology
- metal fine structure including metal, metal nitride, or metal oxide
- the strength of the metal forming the structure itself is higher than the strength of the resist pattern itself or the bonding strength between the resist pattern and the base material. Structure pattern collapse is unlikely to occur.
- semiconductor devices and micromachines are further reduced in size, increased in integration, and speeded up, the pattern of the structure becomes finer, and the collapse of the pattern of the structure due to an increase in aspect ratio becomes a serious problem.
- the resist pattern which is an organic material
- the surface state of the metal microstructure are completely different, unlike the case of the collapse of the resist pattern described above, no effective countermeasures can be found, so semiconductor devices and micromachines are downsized and highly integrated.
- the degree of freedom in pattern design is significantly hindered, such as designing a pattern that does not cause pattern collapse.
- the present invention has been made under such circumstances, and provides a treatment liquid capable of suppressing pattern collapse of a metal microstructure such as a semiconductor device or a micromachine, and a method of manufacturing a metal microstructure using the same. It is the purpose.
- An imidazolium halide having an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group having 14 or 16 carbon atoms, an ammonium halide having an alkyl group having 14, 16 or 18 carbon atoms, or 12 carbon atoms A processing solution for suppressing pattern collapse of a metal microstructure, comprising at least one selected from betaine compounds having 14 or 16 alkyl groups and amine oxide compounds having 14 to 16 or 18 alkyl groups.
- the content of a compound selected from among betaine compounds having 14 or 16 alkyl groups and amine oxide compounds having 14 to 16 or 18 alkyl groups is 10 ppm to 10% [1] to [3 ]
- the process liquid for pattern collapse suppression of the metal fine structure in any one of.
- [5] The processing solution for suppressing pattern collapse of the metal microstructure according to any one of [1] to [4], wherein the pattern of the metal microstructure is made of tungsten.
- a method for producing a metal microstructure wherein the treatment liquid according to any one of [1] to [5] is used in a cleaning step after wet etching or dry etching.
- [8] The method for producing a metal microstructure according to [6] or [7], wherein the metal microstructure is a semiconductor device or a micromachine.
- alkyl group has 12 carbon atoms
- 14 carbon atoms, 16 carbon atoms, and 18 carbon atoms may be expressed as C12, C14, C16, and C18.
- a treatment liquid capable of suppressing pattern collapse of a metal microstructure such as a semiconductor device or a micromachine, and a method of manufacturing a metal microstructure using the same.
- FIG. 3 is a schematic cross-sectional view for each production stage of metal microstructures produced in Examples 1 to 18 and Comparative Examples 1 to 14.
- the treatment liquid of the present invention is used for suppressing pattern collapse of a metal microstructure, and is an imidazolium halide having a C12, C14, or C16 alkyl group, a pyridinium halide having a C14, C16 alkyl group, C14, C16, or C18. It contains at least one of an ammonium halide having an alkyl group, a betaine compound having an alkyl group of C12, C14 and C16, and an amine oxide compound having an alkyl group of C14, C16 and C18.
- Examples of the imidazolium halide having a C12, C14, or C16 alkyl group include 1-dodecyl-3-methylimidazolium chloride, 1-dodecyl-3-methylimidazolium bromide, 1-dodecyl-3-methylimidazolium iodide, 1-methyl-3-dodecylimidazolium chloride, 1-methyl-3-dodecylimidazolium bromide, 1-methyl-3-dodecylimidazolium iodide, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 1 -Dodecyl-2-methyl-3-benzylimidazolium bromide, 1-dodecyl-2-methyl-3-benzylimidazolium iodide, 1-tetradecyl-3-methylimidazolium chloride, 1-tetradecyl-3-methylimidazolium Bromide
- Examples of pyridinium halides having C14 and C16 alkyl groups include tetradecylpyridinium chloride, tetradecylpyridinium bromide, tetradecylpyridinium iodide, hexadecylpyridinium chloride, hexadecylpyridinium bromide, hexadecylpyridinium iodide, 1-tetradecyl-4 -Methylpyridinium chloride, 1-tetradecyl-4-methylpyridinium bromide, 1-tetradecyl-4-methylpyridinium iodide, 1-hexadecyl-4-methylpyridinium chloride, 1-hexadecyl-4-methylpyridinium bromide, 1-hexadecyl- 4-methylpyridinium iodide and the like, and in particular, tetradecylpyridinium chloride,
- ammonium halides having C14, C16, and C18 alkyl groups include tetradecyltrimethylammonium chloride, tetradecyltrimethylammonium bromide, tetradecyltrimethylammonium iodide, hexadecyltrimethylammonium chloride, hexadecyltrimethylammonium bromide, hexadecyltrimethylammonium chloride.
- the alkyl group having 12 carbon atoms is preferably a dodecyl group
- the alkyl group having 14 carbon atoms is preferably a tetradecyl group
- the alkyl group having 16 carbon atoms is preferably a hexadecyl group
- the alkyl group having 18 carbon atoms is okdadecyl.
- Groups are preferred.
- Such a compound having a linear alkyl group can be adsorbed on a metal material at a higher density than a branched alkyl group.
- betaine compounds having C12, C14, and C16 alkyl groups include dodecyldimethylaminoacetic acid betaine, tetradecyldimethylaminoacetic acid betaine, hexadecyldimethylaminoacetic acid betaine, and coconut oil fatty acid amidopropyl betaine. Particularly preferred are dodecyldimethylaminoacetic acid betaine and coconut oil fatty acid amidopropyl betaine.
- the amine oxide compound having a C14, C16, or C18 alkyl group dimethyltetradecylamine oxide, dimethylhexadecylamine oxide, or dimethyloctadecylamine oxide is preferable.
- an imidazolium halide having a C14 or C16 alkyl group is preferable, and an imidazolium halide having a C16 alkyl group is more preferable.
- the pyridinium halide having a C14 or C16 alkyl group is preferably a pyridinium halide having a C16 alkyl group.
- the ammonium halide having a C14, C16, or C18 alkyl group is preferably an ammonium halide having a C16 or C18 alkyl group, and more preferably an ammonium halide having a C18 alkyl group.
- the amine oxide compound having a C14, C16, or C18 alkyl group is preferably an amine oxide compound having a C16 or C18 alkyl group, and more preferably an amine oxide compound having a C18 alkyl group.
- the treatment liquid of the present invention preferably further contains water and is preferably an aqueous solution.
- water those from which metal ions, organic impurities, particle particles, and the like have been removed by distillation, ion exchange treatment, filter treatment, various adsorption treatments, and the like are preferable, and pure water and ultrapure water are particularly preferable.
- the treatment liquid of the present invention includes the above-described imidazolium halide having a C12, C14, C16 alkyl group, pyridinium halide having a C14, C16 alkyl group, ammonium halide having a C14, C16, C18 alkyl group, C12, C14. , A betaine compound having an alkyl group of C16, an amine oxide compound having an alkyl group of C14, C16, and C18, preferably containing water, and other various additives usually used in processing solutions. Including the effects of the treatment liquid.
- the content of a compound selected from among betaine compounds having an alkyl group and amine oxide compounds having an alkyl group of C14, C16, and C18 is preferably 10 ppm to 10% . If the content of the aforementioned compound is within the above range, the effects of these compounds can be sufficiently obtained, but in consideration of ease of handling, economy and foaming, it is preferable to use at a lower concentration of 5% or less.
- the content is preferably 10 to 2000 ppm, more preferably 10 to 1000 ppm.
- an organic solvent such as alcohol may be added, or the solubility may be supplemented by adding an acid or an alkali.
- the treatment liquid of the present invention is suitably used for suppressing pattern collapse of a metal microstructure such as a semiconductor device or a micromachine.
- a metal microstructure such as a semiconductor device or a micromachine.
- W tungsten
- the metal microstructure is patterned on an insulating film type such as SiO 2 (silicon oxide film) or TEOS (tetraethoxyorthosilane oxide film), or an insulating film type is formed on a part of the metal microstructure. May be included.
- the treatment liquid of the present invention can exhibit an excellent effect of suppressing pattern collapse on not only a conventional metal microstructure but also a metal microstructure having a finer and higher aspect ratio.
- the aspect ratio is a value calculated by (pattern height / pattern width)
- the treatment liquid of the present invention is an excellent pattern for patterns having a high aspect ratio of 3 or more, and further 7 or more. Has the effect of suppressing collapse.
- the treatment liquid of the present invention has a fine pattern of 1: 1 line and space, even if the pattern size (pattern width) is 300 nm or less, 150 nm or less, 100 nm or less, and even 50 nm or less.
- the fine pattern having a cylindrical or columnar structure having an interval between patterns of 300 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less has an excellent effect of suppressing pattern collapse.
- the metal microstructure manufacturing method of the present invention is characterized by using the above-described treatment liquid of the present invention in a cleaning step after wet etching or dry etching. More specifically, after the metal fine structure pattern and the treatment liquid of the present invention are brought into contact with each other by dipping, spray discharge, spraying, or the like in the cleaning step, the treatment liquid is replaced with water. dry.
- the immersion time is preferably 10 seconds to 30 minutes, more preferably 15 seconds to 20 minutes, and still more preferably 20 seconds to 15 minutes.
- the temperature condition is preferably 10 to 60 ° C., more preferably 15 to 50 ° C., still more preferably 20 to 40 ° C., and particularly preferably 25 to 40 ° C.
- the surface of the pattern is hydrophobized, thereby preventing the pattern from collapsing so that the pattern contacts the adjacent pattern. It becomes possible to do.
- the treatment liquid of the present invention has a wet etching process or a dry etching process in the manufacturing process of the metal microstructure, followed by a wet process (etching or cleaning, rinsing for washing away the cleaning liquid), and then drying. If it has the process to do, it can apply widely irrespective of the kind of metal microstructure. For example, (i) in the manufacture of a DRAM-type semiconductor device, after wet etching is performed on an insulating film around a conductive film (see, for example, Japanese Patent Laid-Open Nos.
- Examples 1-18 As shown in FIG. 1A, after a silicon nitride 103 (thickness: 100 nm) and a silicon oxide 102 (thickness: 1200 nm) are formed on a silicon substrate 104, a photoresist 101 is formed. By exposing and developing the photoresist 101, a circle-ring opening 105 ( ⁇ 125 nm, distance between the circle and the circle: 50 nm) shown in FIG. 1B is formed, and dry using the photoresist 101 as a mask. A cylindrical hole 106 shown in FIG. 1C was formed in the silicon oxide 102 by etching up to the silicon nitride 103 layer.
- the photoresist 101 was removed by ashing to obtain a structure in which a cylindrical hole 106 reaching the silicon nitride 103 layer was formed in the silicon oxide 102 shown in FIG. Tungsten is filled and deposited as the metal 107 in the cylindrical hole 106 of the obtained structure (FIG. 1- (e)), and an excess on the silicon oxide 102 is obtained by chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- the metal (tungsten) 107 was removed to obtain a structure in which a metal (tungsten) cylinder 108 was embedded in the silicon oxide 102 shown in FIG.
- the silicon oxide 102 of the obtained structure was dissolved and removed with a 0.5% hydrofluoric acid aqueous solution (25 ° C., 1 minute immersion treatment), then rinsed with pure water, treatment liquid 1-18 (30 ° C., 10 minute immersion treatment) , And pure water rinse in that order, followed by drying to obtain the structure shown in FIG.
- the obtained structure is a microstructure having a metal (tungsten) cylinder-chimney pattern ( ⁇ 125 nm, height: 1200 nm (aspect ratio: 9.6), distance between cylinder: 50 nm). Yes, more than 70% of the pattern did not collapse.
- pattern collapse was observed using “FE-SEM S-5500 (model number)” manufactured by Hitachi High-Technologies Corporation, and the collapse suppression rate was calculated as the ratio of the pattern that did not collapse in the total number of patterns. It was determined to be acceptable if the collapse inhibition rate was 50% or more.
- Table 3 shows the results of the treatment liquid, the treatment method, and the collapse inhibition rate used in each example.
- Example 1 the silicon oxide 102 of the structure shown in FIG. 1 (f) was dissolved and removed with hydrofluoric acid, and then treated with pure water only. ) was obtained. Over 50% of the pattern of the obtained structure caused collapse as shown in FIG. 1 (h) (the collapse inhibition rate is less than 50%).
- Table 3 shows the results of the treatment liquid, the treatment method, and the collapse inhibition rate used in Comparative Example 1.
- Example 2 the silicon oxide 102 of the structure shown in FIG. 1 (f) was dissolved and removed with hydrofluoric acid and treated with pure water, and then the comparative solutions 1 to 13 shown in Table 3 were used instead of the treating solution 1.
- a structure shown in FIG. 1G was obtained in the same manner as in Example 1 except that the above process was performed. Over 50% of the pattern of the obtained structure collapsed as shown in FIG. 1 (h).
- Table 3 shows the results of the treatment liquid, treatment method, and collapse suppression rate used in Examples 2 to 14.
- the treatment liquid of the present invention can be suitably used for suppressing pattern collapse in the production of metal microstructures such as semiconductor devices and micromachines (MEMS).
- MEMS micromachines
- Photoresist 102 Silicon oxide 103. Silicon nitride 104. Silicon substrate 105. Circular opening 106. Cylindrical hole 107. Metal (tungsten) 108. Metal (tungsten) cylinder
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Abstract
Description
本発明は、このような状況下になされたもので、半導体装置やマイクロマシンといった金属微細構造体のパターン倒壊を抑制しうる処理液及びこれを用いた金属微細構造体の製造方法を提供することを目的とするものである。
本発明は、かかる知見に基づいて完成したものである。すなわち、本発明の要旨は下記のとおりである。
[2]炭素数12のアルキル基がドデシル基、炭素数14のアルキル基がテトラデシル基、炭素数16のアルキル基がヘキサデシル基、炭素数18のアルキル基がオクダデシル基である[1]記載の金属微細構造体のパターン倒壊抑制用処理液。
[3]さらに水を含む[1]又は[2]に記載の金属微細構造体のパターン倒壊抑制用処理液。
[4]炭素数12、14若しくは16のアルキル基を有するイミダゾリウムハライド、炭素数14若しくは16のアルキル基を有するピリジニウムハライド、炭素数14、16若しくは18のアルキル基を有するアンモニウムハライド、炭素数12、14若しくは16のアルキル基を有するベタイン化合物、炭素数14、16若しくは18のアルキル基を有するアミンオキシド化合物の中から選ばれた化合物の含有量が10ppm~10%である[1]~[3]のいずれかに記載の金属微細構造体のパターン倒壊抑制用処理液。
[5]金属微細構造体のパターンが、タングステンを用いてなるものである[1]~[4]のいずれかに記載の金属微細構造体のパターン倒壊抑制用処理液。
[6]ウェットエッチング又はドライエッチングの後の洗浄工程において、[1]~[5]のいずれかに記載の処理液を用いることを特徴とする金属微細構造体の製造方法。
[7]金属微細構造体のパターンが、タングステンを用いてなるものである[6]に記載の金属微細構造体の製造方法。
[8]金属微細構造体が、半導体装置又はマイクロマシンである[6]又は[7]に記載の金属微細構造体の製造方法。
C14、C16、C18のアルキル基を有するアミンオキシド化合物としては、ジメチルテトラデシルアミンオキシド、ジメチルヘキサデシルアミンオキシド、ジメチルオクタデシルアミンオキシドが好ましい。
C14、C16のアルキル基を有するピリジニウムハライドとしては、C16のアルキル基を有するピリジニウムハライドが好ましい。
C14、C16、C18のアルキル基を有するアンモニウムハライドとしては、C16、C18のアルキル基を有するアンモニウムハライドが好ましく、C18のアルキル基を有するアンモニウムハライドがより好ましい。
C14、C16、C18のアルキル基を有するアミンオキシド化合物としては、C16、C18のアルキル基を有するアミンオキシド化合物が好ましく、C18のアルキル基を有するアミンオキシド化合物がより好ましい。
前述化合物の含有量が上記範囲内であれば、これらの化合物の効果が十分得られるが、取り扱いやすさや経済性や泡立ちを考慮して、より低濃度の5%以下で用いることが好ましく、より好ましくは10~2000ppmであり、さらに好ましくは10~1000ppmである。また、これらの化合物の水に対する溶解性が十分ではなく相分離するような場合、アルコール等の有機溶剤を加えてもよいし、酸、アルカリを加えて溶解性を補ってもよい。また相分離せず単に白濁した場合でも、その処理液の効果を害しない範囲で用いても良いし、その処理液が均一となるように撹拌を伴って使用してもよい。また、処理液の白濁を避けるために、上記と同様にアルコール等の有機溶剤や酸、アルカリを加えてから用いてもよい。
なお、金属微細構造体は、SiO2(シリコン酸化膜)やTEOS(テトラエトキシオルソシラン酸化膜)等の絶縁膜種の上にパターニングされる場合や、金属微細構造の一部に絶縁膜種が含まれる場合がある。
本発明の金属微細構造体の製造方法は、ウェットエッチング又はドライエッチングの後の洗浄工程において、上記した本発明の処理液を用いることを特徴とするものである。より具体的には、該洗浄工程において、好ましくは金属微細構造体のパターンと本発明の処理液とを浸漬、スプレー吐出、噴霧等により接触させた後、水で該処理液を置換してから乾燥させる。ここで、金属微細構造体のパターンと本発明の処理液とを浸漬により接触させる場合、浸漬時間は10秒~30分が好ましく、より好ましくは15秒~20分、さらに好ましくは20秒~15分、特に好ましくは30秒~10分であり、温度条件は10~60℃が好ましく、より好ましくは15~50℃、さらに好ましくは20~40℃、特に好ましくは25~40℃である。また、金属微細構造体のパターンと本発明の処理液との接触の前に、あらかじめ水で洗浄を行ってもよい。このように、金属微細構造体のパターンと本発明の処理液とを接触させることにより、該パターンの表面上を疎水化することにより、パターンが隣のパターンに接触するようなパターンの倒壊を抑制することが可能となる。
表1に示される配合組成(質量%)に従い、金属微細構造体のパターン倒壊抑制用処理液を調合した。
図-1(a)に示すように、シリコン基板104上に窒化珪素103(厚さ:100nm)及び酸化珪素102(厚さ:1200nm)を成膜した後、フォトレジスト101を形成した後、該フォトレジスト101を露光、現像することにより、図-1(b)に示す円-リング状開口部105(φ125nm、円と円との距離:50nm)を形成し、該フォトレジスト101をマスクとしてドライエッチングにより酸化珪素102に図-1(C)に示す円筒状の孔106を、窒化珪素103の層までエッチングして形成した。次いで、フォトレジスト101をアッシングにより除去し、図-1(d)に示す酸化珪素102に窒化珪素103の層に達する円筒状孔106が開孔された構造体を得た。得られた構造体の円筒状孔106に、金属107としてタングステンを充填・堆積し(図1-(e))、化学的機械研磨(ケミカルメカニカルポリッシング;CMP)により、酸化珪素102上の余分な金属(タングステン)107を除去し、図-1(f)に示す酸化珪素102中に金属(タングステン)の円筒108が埋め込まれた構造体を得た。得られた構造体の酸化珪素102を0.5%フッ酸水溶液により溶解除去(25℃、1分浸漬処理)した後、純水リンス、処理液1~18(30℃、10分浸漬処理)、及び純水リンスの順で接液処理し、乾燥を行い、図-1(g)に示す構造体を得た。
ここで、パターンの倒壊は、「FE-SEM S-5500(型番)」:日立ハイテクノロジーズ社製を用いて観察し、倒壊抑制率は、パターン全本数中の倒壊しなかったパターンの割合を算出して求めた数値であり、該倒壊抑制率が50%以上であれば合格と判断した。各例において使用した処理液、処理方法及び倒壊抑制率の結果を第3表に示す。
実施例1において、図-1(f)に示される構造体の酸化珪素102をフッ酸により溶解除去した後、純水のみで処理した以外は、実施例1と同様にして図-1(g)に示す構造体を得た。得られた構造体のパターンの50%以上は、図-1(h)に示されるような倒壊をおこしていた(倒壊抑制率は50%未満となる。)。比較例1において使用した処理液、処理方法及び倒壊抑制率の結果を第3表に示す。
実施例1において、図-1(f)に示される構造体の酸化珪素102をフッ酸により溶解除去し純水で処理した後、処理液1の代わりに第3表に示す比較液1~13で処理する以外は、実施例1と同様にして図-1(g)に示す構造体を得た。得られた構造体のパターンの50%以上は、図-1(h)に示されるような倒壊をおこしていた。各例2~14において使用した処理液、処理方法及び倒壊抑制率の結果を第3表に示す。
*2:「サーフロンS-111(商品名)」;AGCセイミケミカル(株)製,0.01%水
*3:「サーフィノール420(商品名)」;日信化学工業株式会社製,0.01%水
*4:「サーフィノール104(商品名)」;日信化学工業株式会社製,0.01%水
*5:「カチオーゲンTML(商品名)」;第一工業製薬株式会社製,0.01%水
*6:「エパン420(商品名)」;第一工業製薬株式会社製,0.01%水
102.酸化珪素
103.窒化珪素
104.シリコン基板
105.円状開口部
106.円筒状孔
107.金属(タングステン)
108.金属(タングステン)の円筒
Claims (8)
- 炭素数12、14若しくは16のアルキル基を有するイミダゾリウムハライド、炭素数14若しくは16のアルキル基を有するピリジニウムハライド、炭素数14、16若しくは18のアルキル基を有するアンモニウムハライド、炭素数12、14若しくは16のアルキル基を有するベタイン化合物、炭素数14、16若しくは18のアルキル基を有するアミンオキシド化合物の中から選ばれる少なくとも一種を含む金属微細構造体のパターン倒壊抑制用処理液。
- 炭素数12のアルキル基がドデシル基、炭素数14のアルキル基がテトラデシル基、炭素数16のアルキル基がヘキサデシル基、炭素数18のアルキル基がオクダデシル基である請求項1記載の金属微細構造体のパターン倒壊抑制用処理液。
- さらに水を含む請求項1又は2に記載の金属微細構造体のパターン倒壊抑制用処理液。
- 炭素数12、14若しくは16のアルキル基を有するイミダゾリウムハライド、炭素数14若しくは16のアルキル基を有するピリジニウムハライド、炭素数14、16若しくは18のアルキル基を有するアンモニウムハライド、炭素数12、14若しくは16のアルキル基を有するベタイン化合物、炭素数14、16若しくは18のアルキル基を有するアミンオキシド化合物の中から選ばれた化合物の含有量が10ppm~10%である請求項1~3のいずれかに記載の金属微細構造体のパターン倒壊抑制用処理液。
- 金属微細構造体のパターンが、タングステンを用いてなるものである請求項1~4のいずれかに記載の金属微細構造体のパターン倒壊抑制用処理液。
- ウェットエッチング又はドライエッチングの後の洗浄工程において、請求項1~5のいずれかに記載の処理液を用いることを特徴とする金属微細構造体の製造方法。
- 金属微細構造体のパターンが、タングステンを用いてなるものである請求項6に記載の金属微細構造体の製造方法。
- 金属微細構造体が、半導体装置又はマイクロマシンである請求項6又は7に記載の金属微細構造体の製造方法。
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