WO2011027737A1 - プラズマ光源 - Google Patents
プラズマ光源 Download PDFInfo
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- WO2011027737A1 WO2011027737A1 PCT/JP2010/064757 JP2010064757W WO2011027737A1 WO 2011027737 A1 WO2011027737 A1 WO 2011027737A1 JP 2010064757 W JP2010064757 W JP 2010064757W WO 2011027737 A1 WO2011027737 A1 WO 2011027737A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
Definitions
- the present invention relates to a plasma light source for EUV radiation.
- Lithography using an extreme ultraviolet light source is expected for microfabrication of next-generation semiconductors.
- Lithography is a technique for forming an electronic circuit by irradiating a resist material by reducing and projecting light or a beam onto a silicon substrate through a mask on which a circuit pattern is drawn.
- the minimum processing dimension of a circuit formed by photolithography basically depends on the wavelength of the light source. Therefore, it is essential to shorten the wavelength of the light source for next-generation semiconductor development, and research for this light source development is underway.
- EUV extreme ultra violet
- the most promising next generation lithography light source is an extreme ultra violet (EUV) light source, which means light in the wavelength region of about 1 to 100 nm.
- the light in this region has a high absorptance with respect to all substances, and a transmissive optical system such as a lens cannot be used. Therefore, a reflective optical system is used.
- the optical system in the extreme ultraviolet region is very difficult to develop, and exhibits a reflection characteristic only at a limited wavelength.
- the light source plasma generation can be broadly classified into light source plasma generation (LPP: Laser Produced Plasma) by laser irradiation method and light source plasma generation (DPP: Discharge Produced Plasma) by gas discharge method driven by pulse power technology.
- LPP Light Source Plasma generation
- DPP Discharge Produced Plasma
- the radiation spectrum from a high-temperature and high-density plasma by the gas discharge method is basically determined by the temperature and density of the target material. According to the calculation result of the atomic process of the plasma, Xe, Sn can be used to make the plasma in the EUV radiation region.
- the electron temperature and the electron density are optimum to be several tens of eV and about 10 18 cm ⁇ 3 respectively, and in the case of Li, about 20 eV and about 10 18 cm ⁇ 3 are optimum.
- Non-Patent Documents 1 and 2 and Patent Document 1 The plasma light source described above is disclosed in Non-Patent Documents 1 and 2 and Patent Document 1.
- EUV lithography light sources are required to have a high average output, a small light source size, and a small amount of scattered particles (debris).
- the EUV emission amount is extremely low with respect to the required output, and increasing the output is one of the major issues.
- the input energy is increased for increasing the output, the damage caused by the thermal load will be affected by the plasma generator and The lifetime of the optical system is reduced. Therefore, high energy conversion efficiency is indispensable to satisfy both high EUV output and low heat load.
- Room-temperature solid media such as Sn and Li have high spectral conversion efficiency, but the plasma generation is accompanied by phase changes such as melting and evaporation, so the effect of contamination inside the device due to debris (derived from discharge) such as neutral particles becomes larger. Therefore, the target supply and recovery system must be strengthened as well.
- the conventional capillary discharge has a drawback that the effective solid solid angle is small because the plasma is confined in the capillary.
- an object of the present invention is to generate plasma light for EUV radiation stably for a long time (on the order of ⁇ sec), and the damage caused by the thermal load of the component equipment is small, and effective radiation of the generated plasma light is achieved.
- An object of the present invention is to provide a plasma light source capable of increasing the solid angle.
- a pair of coaxial electrodes arranged opposite to each other, and a discharge for maintaining the plasma medium in the coaxial electrodes at a temperature and pressure suitable for plasma generation.
- a plasma light source that includes an environment holding device and a voltage applying device that applies a discharge voltage whose polarity is reversed to each coaxial electrode, and forms a tubular discharge between a pair of coaxial electrodes to contain plasma in the axial direction. Because
- Each of the coaxial electrodes includes a bar-shaped center electrode extending on a single axis, a guide electrode that surrounds the opposite ends of the center electrode at a predetermined interval, and an insulation between the center electrode and the guide electrode.
- the insulating member is a partially porous ceramic composed of an insulating dense portion through which the liquefied plasma medium cannot continuously penetrate and a porous portion through which the liquefied plasma medium continuously penetrates,
- the insulating dense portion has a reservoir that holds a plasma medium therein, and the porous portion communicates between the inner surface of the reservoir, the center electrode, and the guide electrode through the inside of the insulating dense portion.
- a plasma light source is provided.
- the plasma light source further includes a temperature-adjustable heating device that heats the insulating member and liquefies the plasma medium therein.
- the plasma light source includes a gas supply device that supplies an inert gas into the reservoir, and a pressure adjustment device that adjusts the supply pressure of the inert gas.
- a pair of coaxial electrodes arranged opposite to each other, and a discharge for maintaining the plasma medium in the coaxial electrodes at a temperature and pressure suitable for plasma generation.
- a plasma light source that includes an environment holding device and a voltage applying device that applies a discharge voltage whose polarity is reversed to each coaxial electrode, and forms a tubular discharge between a pair of coaxial electrodes to contain plasma in the axial direction. Because Each of the coaxial electrodes includes a bar-shaped center electrode extending on a single axis, a guide electrode that surrounds the opposite ends of the center electrode at a predetermined interval, and an insulation between the center electrode and the guide electrode.
- An insulating member that The insulating member is made of a porous ceramic having a front surface located on the tip side of the center electrode and a back surface on the opposite side, Furthermore, a hollow reservoir that opens in the back of the insulating member and holds the plasma medium inside,
- a gas supply device for supplying an inert gas into the reservoir;
- a pressure adjusting device for adjusting a supply pressure of the inert gas;
- a plasma light source comprising a temperature-adjustable heating device that heats and liquefies the plasma medium in the reservoir.
- the voltage application device includes a positive voltage source for applying a positive discharge voltage higher than the guide electrode to the center electrode of one coaxial electrode, and the other A negative voltage source for applying a negative discharge voltage lower than the guide electrode to the central electrode of the coaxial electrode, and a trigger switch for simultaneously applying the positive voltage source and the negative voltage source to the respective coaxial electrodes.
- a pair of coaxial electrodes arranged opposite to each other are provided, and a pair of coaxial electrodes are caused to generate planar discharge currents (planar discharges), respectively.
- the planar discharge forms a single plasma at the opposite intermediate position of each coaxial electrode, and then switches the planar discharge to a tubular discharge between a pair of coaxial electrodes to contain the plasma. Therefore, plasma light for EUV radiation can be stably generated for a long time (on the order of ⁇ sec).
- a single plasma is formed at the opposite intermediate position of a pair of coaxial electrodes, and the energy conversion efficiency can be greatly improved.
- the thermal load on each electrode is reduced, and the damage caused by the thermal load on the component equipment can be greatly reduced.
- plasma that is a light emission source of plasma light is formed at an intermediate position between the pair of coaxial electrodes, an effective solid angle of radiation of the generated plasma light can be increased.
- FIG. 1 is a diagram showing a first embodiment of a plasma light source according to the present invention.
- the plasma light source according to the first embodiment of the present invention includes a pair of coaxial electrodes 10, a discharge environment holding device 20, a voltage application device 30, and a heating device 40.
- the pair of coaxial electrodes 10 are disposed opposite to each other with the symmetry plane 1 as the center.
- Each coaxial electrode 10 includes a rod-shaped center electrode 12, a guide electrode 14, and an insulating member 16.
- the rod-shaped center electrode 12 is a conductive electrode extending on a single axis ZZ.
- the end face of the center electrode 12 facing the symmetry plane 1 is arcuate. This configuration is not essential, and a concave hole may be provided on the end surface to stabilize the planar discharge current 2 and the tubular discharge 4 described later, or a flat surface.
- the guide electrode 14 surrounds the opposite end portions of the center electrode 12 with a certain interval, and holds a plasma medium therebetween.
- the guide electrode 14 includes a small-diameter hollow cylindrical portion 14a located on the side of the symmetry plane 1 and a large-diameter hollow portion 14b located on the opposite side and having a larger diameter than the small-diameter hollow cylindrical portion 14a.
- the end surface of the small-diameter hollow cylindrical portion 14a facing the symmetry plane 1 of the guide electrode 14 is an arc shape in this example, but may be a flat surface.
- the plasma medium may be a solid plasma medium such as Sn or Li at room temperature.
- the insulating member 16 is a hollow cylindrical electric insulator positioned between the center electrode 12 and the guide electrode 14, and electrically insulates between the center electrode 12 and the guide electrode 14.
- the insulating member 16 is made of a porous ceramic having a front surface located on the distal end side of the center electrode 12 and a back surface on the opposite side.
- the insulating member 16 includes a small-diameter portion that fits inside the small-diameter hollow cylindrical portion 14a and a large-diameter portion that fits inside the large-diameter hollow portion 14b.
- the large diameter portion is integrally connected to the guide electrode 14 by a bolt 17 (see FIG. 2).
- the center electrodes 12 are positioned on the same axis ZZ and are symmetrically spaced apart from each other.
- the discharge environment holding device 20 holds the coaxial electrode 10 at a temperature and pressure suitable for plasma generation of the plasma medium in the coaxial electrode 10.
- the discharge environment holding device 20 can be constituted by, for example, a vacuum chamber, a temperature controller, a vacuum device, and a plasma medium supply device. This configuration is not essential, and other configurations may be used.
- the voltage application device 30 applies a discharge voltage with the polarity reversed to each coaxial electrode 10.
- the voltage application device 30 includes a positive voltage source 32, a negative voltage source 34, and a trigger switch 36.
- the positive voltage source 32 applies a positive discharge voltage higher than that of the guide electrode 14 to the center electrode 12 of the coaxial electrode 10 on one side (left side in this example).
- the negative voltage source 34 applies a negative discharge voltage lower than that of the guide electrode 14 to the center electrode 12 of the other coaxial electrode 10 (right side in this example).
- the trigger switch 36 operates the positive voltage source 32 and the negative voltage source 34 at the same time, and simultaneously applies positive and negative discharge voltages to the respective coaxial electrodes 10.
- the plasma light source according to the first embodiment of the present invention forms a tubular discharge (described later) between the pair of coaxial electrodes 10 to contain the plasma in the axial direction.
- the heating device 40 includes an electric heater 42 that heats the insulating member 16 and a heating power supply device 44 that supplies electric power for heating to the electric heater 42.
- the heating device 40 heats the insulating member 16 and liquefies the plasma medium therein. It has become.
- the heating device 40 heats the insulating member 16 to heat and liquefy a plasma medium in a reservoir 18 described later.
- the electric heater 42 is disposed in a groove provided on the outer periphery of the large-diameter portion of the insulating member 16, and is supplied from the heating power supply device 44 via a power supply line that penetrates the large-diameter hollow portion 14 b of the guide electrode 14. Power is supplied.
- a temperature sensor (not shown) is provided, and the insulating member 16 is heated to a predetermined temperature to hold the temperature.
- FIG. 2 is an enlarged view of the coaxial electrode of FIG.
- an insulating member 16 is a partially porous ceramic in which an insulating dense portion 16a into which a liquefied plasma medium cannot continuously penetrate and a porous portion 16b into which a liquefied plasma medium continuously penetrates are integrally formed. is there.
- the insulating dense portion 16 a insulates between the center electrode 12 and the guide electrode 14.
- the porous portion 16b is continuous from the back surface to the front surface of the insulating member 16 through the inside of the insulating dense portion 16a.
- the ceramic constituting the dense insulating portion 16a and the porous portion 16b is an insulating ceramic such as alumina (Al 2 O 3 ), aluminum nitride (AlN), zirconia (ZrO), silicon carbide (SiC), or the like. preferable.
- the particle size and firing temperature of the insulating dense portion 16a are set so that the liquefied plasma medium cannot continuously penetrate. Further, the particle size and the firing temperature of the porous portion 16b are set so that the liquefied plasma medium continuously permeates.
- the insulating dense portion 16a has a reservoir 18 that holds a plasma medium therein.
- the reservoir 18 is a hollow cylindrical cavity that is provided inside the insulating dense portion 16a and that is centered on the axis ZZ.
- the reservoir 18 opens to the back surface of the insulating member 16, and the back surface (left side in the drawing) of the reservoir 18 is closed by the closing plate 15.
- the closing plate 15 is detachably fixed by a nut 13 that is screwed with a screw shaft 12 a provided on the back side of the center electrode 12.
- the closing plate 15 may be a refractory metal plate or a refractory ceramic that can withstand the temperature of the liquefied plasma medium. With this configuration, the plasma medium can be appropriately supplied to the reservoir 18 by attaching and detaching the closing plate 15.
- the plasma medium in the reservoir 18 is Sn, Li, etc. in this example, and is liquefied by the heating device 40.
- the plasma light source of FIG. 1 further includes a gas supply device 50 and a pressure adjustment device 52.
- the gas supply device 50 supplies an inert gas into the reservoir 18.
- the inert gas is preferably a rare gas such as argon or xenon.
- the pressure adjustment device 52 is provided in the middle of the gas supply line of the gas supply device 50 and adjusts the supply pressure of the inert gas. In the first embodiment, the gas supply device 50 and the pressure adjustment device 52 may be omitted.
- the insulating member 16 is heated and maintained at a temperature at which the vapor pressure of the plasma medium 6 (Sn, Li, etc.) becomes a pressure suitable for plasma generation (Torr order). 12 and the guide electrode 14) is set to a vapor atmosphere of the plasma medium 6 in the Torr order. Further, the electrode conductors (the center electrode 12 and the guide electrode 14) are maintained at a high temperature at which the vapor of the plasma medium 6 does not aggregate.
- the plasma medium 6 can be leached in a liquid metal state from the surface (end surface) of the porous portion 16b of the insulating member 16.
- the plasma medium 6 may be supplied as a metal vapor gas from the surface (end surface) of the porous portion 16b of the insulating member 16 into the coaxial electrode 10 (between the center electrode 12 and the guide electrode 14).
- the heating device 40 liquefies the plasma medium 6 in the reservoir 18 and further vaporizes the liquefied plasma medium 6 to form a metal vapor gas.
- the insulating dense portion 16b is preferably formed so as not to pass gas. .
- the shape of the insulating dense portion 16a and the porous portion 16b is not limited to this example, and may be other shapes as long as the center electrode 12 and the guide electrode 14 are electrically insulated.
- FIG. 3A to 3D are operation explanatory views of the plasma light source of FIG.
- FIG. 3A shows the occurrence of a sheet discharge
- FIG. 3B shows the movement of the sheet discharge
- FIG. 3C shows the plasma formation
- FIG. 3D shows the plasma confinement magnetic field formation.
- the pair of coaxial electrodes 10 described above are arranged to face each other, a plasma medium is supplied into the coaxial electrode 10 by the discharge environment holding device 20, and the temperature is suitable for plasma generation. And the discharge voltage which reversed the polarity to each coaxial electrode 10 with the voltage application apparatus 30 is hold
- planar discharge 2 is a planar discharge current that spreads two-dimensionally, and is hereinafter also referred to as a “current sheet”.
- the center electrode 12 of the left coaxial electrode 10 is applied with a positive voltage (+)
- the guide electrode 14 is applied with a negative voltage ( ⁇ )
- the center electrode 12 of the right coaxial electrode 10 is applied with a negative voltage ( ⁇ ).
- the guide electrode 14 is applied to a positive voltage (+).
- both guide electrodes 14 may be grounded and held at 0 V
- one center electrode 12 may be applied to a positive voltage (+)
- the other center electrode 12 may be applied to a negative voltage ( ⁇ ).
- the planar discharge 2 moves in a direction (direction toward the center in the drawing) discharged from the electrode by the self magnetic field.
- the pair of opposed center electrodes 12 have a positive voltage (+) and a negative voltage ( ⁇ ), and similarly, the pair of guide electrodes 14 opposed to each other also has a positive voltage (+) and a negative voltage.
- ( ⁇ ) as shown in FIG. 3D, the planar discharge 2 is switched to the tubular discharge 4 that discharges between the pair of opposed center electrodes 12 and between the pair of opposed guide electrodes 14.
- the tubular discharge 4 means a hollow cylindrical discharge current surrounding the axis ZZ.
- a plasma confinement magnetic field (magnetic bin) indicated by reference numeral 5 in the figure is formed, and the plasma 3 can be sealed in the radial direction and the axial direction.
- the central portion of the magnetic bin 5 is large due to the pressure of the plasma 3 and both sides thereof are small, and a magnetic pressure gradient in the axial direction toward the plasma 3 is formed. Furthermore, the plasma 3 is compressed (Z pinch) in the center direction by the self-magnetic field of the plasma current, and the restraint by the self-magnetic field also acts in the radial direction. In this state, if the energy corresponding to the light emission energy of the plasma 3 is continuously supplied from the voltage application device 30, the plasma light 8 (EUV) can be stably generated for a long time with high energy conversion efficiency.
- EUV plasma light 8
- FIG. 4 is a view showing a second embodiment of the plasma light source according to the present invention
- FIG. 5 is an enlarged view of the coaxial electrode of FIG.
- the center electrode 12B, guide electrode 14B, insulating member 16B, reservoir 18B and An electric heater 42B is provided.
- each coaxial electrode 10 includes a rod-shaped center electrode 12B, a tubular guide electrode 14B, and a ring-shaped insulating member 16B.
- the ring-shaped insulating member 16B is a hollow cylindrical electric insulator positioned between the center electrode 12B and the guide electrode 14B, and electrically insulates between the center electrode 12B and the guide electrode 14B.
- the ring-shaped insulating member 16B is a porous ceramic.
- the plasma light source of FIG. 4 further includes a hollow reservoir 18B that opens to the back surface of the insulating member 16B and holds a plasma medium therein.
- the heating device 40 includes an electric heater 42B that heats the reservoir 18B and a heating power supply device 44 that supplies electric power for heating to the electric heater 42B, and heats and liquefies the plasma medium in the reservoir 18B. It has become.
- Other configurations in the second embodiment are the same as those in the first embodiment. However, in the second embodiment, the gas supply device 50 and the pressure adjustment device 52 are not omitted.
- each pair of coaxial electrodes 10 arranged opposite to each other are provided, and each pair of coaxial electrodes 10 has a planar discharge current (surface).
- a planar discharge 2) is generated, and a single plasma 3 is formed by the planar discharge 2 at the opposite intermediate position of each coaxial electrode 10, and then the planar discharge 2 is converted into a tubular discharge 4 between a pair of coaxial electrodes 10 Since the plasma confinement magnetic field 5 (magnetic bin 5) for confining the plasma 3 is formed, the plasma light for EUV radiation can be stably generated for a long time (on the order of ⁇ sec).
- a single plasma 3 is formed at an intermediate position where a pair of coaxial electrodes 10 face each other, and the energy conversion efficiency is greatly improved (10 times or more).
- the thermal load on each electrode during plasma formation is reduced, and the damage caused by the thermal load on the components can be greatly reduced.
- the plasma 3 which is a light source of plasma light is formed at an intermediate position where the pair of coaxial electrodes 10 face each other, the effective radiation solid angle of the generated plasma light can be increased.
- the insulating member 16 is a partially porous ceramic in which the insulating dense portion 16a and the porous portion 16b are integrally molded, and the insulating dense portion 16a has a plasma medium therein. Since the porous portion 16b communicates between the inner surface of the reservoir 18, the center electrode 12 and the guide electrode 14 through the inside of the insulating dense portion 16a, the presence of the insulating dense portion 16a Even if a liquid metal that is a plasma medium flows through the porous portion 16b, insulation between the coaxial electrodes can be maintained, and the plasma medium can be continuously supplied between the center electrode 12 and the guide electrode.
- the insulating member 16 is preferably formed by integrally molding the insulating dense portion 16a and the porous portion 16b in terms of the device structure, the insulating dense portion 16a and the porous portion 16b are joined (bonded, brazed, etc.).
- a sealing structure may be provided so that the plasma medium does not leak from the gap between the insulating dense portion 16a and the porous portion 16b.
- a hollow reservoir 18 or 18B that opens on the back surface of the insulating member 16 or 16B and holds the plasma medium therein, and an inert gas in the reservoir 18 or 18B.
- a gas supply device 50 for supplying the pressure a pressure adjustment device 52 for adjusting the supply pressure of the inert gas, and a temperature-adjustable heating device 40 for heating and liquefying the plasma medium in the reservoir 18 or 18B.
- the temperature of the device 40 By adjusting the temperature of the device 40, the vapor pressure of the plasma medium on the front surface of the insulating member 16 or 16B can be controlled.
- the gas supply device 50 and the pressure adjustment device 52 can control the supply amount of the plasma medium (liquid metal) by adjusting the pressure of the inert gas supplied into the reservoir 18 or 18B. Therefore, the plasma medium can be continuously supplied, the plasma medium can be supplied at a sufficient supply speed, and the supply amount of the plasma medium and the vapor pressure can be controlled independently.
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Abstract
Description
前記各同軸状電極は、単一の軸線上に延びる棒状の中心電極と、該中心電極の対向する先端部を一定の間隔を隔てて囲むガイド電極と、前記中心電極とガイド電極の間を絶縁する絶縁部材とからなり、
該絶縁部材は、液化したプラズマ媒体が連続して浸透できない絶縁性緻密部分と、液化したプラズマ媒体が連続して浸透する多孔質部分とからなる部分多孔体セラミックであり、
前記絶縁性緻密部分は、プラズマ媒体を内部に保有するリザーバーを有し、前記多孔質部分は、絶縁性緻密部分の内部を通して前記リザーバーの内面と中心電極とガイド電極の間とを連通する、ことを特徴とするプラズマ光源が提供される。
前記各同軸状電極は、単一の軸線上に延びる棒状の中心電極と、該中心電極の対向する先端部を一定の間隔を隔てて囲むガイド電極と、前記中心電極とガイド電極の間を絶縁する絶縁部材とからなり、
該絶縁部材は、中心電極の前記先端部側に位置する前面とその反対側の背面とを有する多孔体セラミックからなり、
さらに絶縁部材の背面に開口しプラズマ媒体を内部に保有する中空のリザーバーと、
該リザーバー内に不活性ガスを供給するガス供給装置と、
前記不活性ガスの供給圧力を調整する圧力調整装置と、
前記リザーバー内のプラズマ媒体を加熱し液化する温度調整可能な加熱装置と、を備えることを特徴とするプラズマ光源が提供される。
この図において、本発明の第1実施形態によるプラズマ光源は、1対の同軸状電極10、放電環境保持装置20、電圧印加装置30、及び加熱装置40を備える。
各同軸状電極10は、棒状の中心電極12、ガイド電極14及び絶縁部材16からなる。
この例において、中心電極12の対称面1に対向する端面は円弧状になっている。なお、この構成は必須ではなく、端面に凹穴を設け、後述する面状放電電流2と管状放電4を安定化させるようにしてもよく、或いは平面でもよい。
プラズマ媒体は、この例ではSn,Li等の常温で固体のプラズマ媒体であるのがよい。
絶縁部材16は、この例では、小径中空円筒部分14aの内側に嵌合する小径部分と、大径中空部分14bの内側に嵌合する大径部分とからなる。大径部分は、ボルト17(図2参照)により、ガイド電極14に一体的に連結されている。
放電環境保持装置20は、例えば、真空チャンバー、温度調節器、真空装置、及びプラズマ媒体供給装置により構成することができる。なおこの構成は必須ではなく、その他の構成であってもよい。
電圧印加装置30は、この例では、正電圧源32、負電圧源34及びトリガスイッチ36からなる。
正電圧源32は、一方(この例では左側)の同軸状電極10の中心電極12にそのガイド電極14より高い正の放電電圧を印加する。
負電圧源34は、他方(この例では右側)の同軸状電極10の中心電極12にそのガイド電極14より低い負の放電電圧を印加する。
トリガスイッチ36は、正電圧源32と負電圧源34を同時に作動させて、それぞれの同軸状電極10に同時に正負の放電電圧を印加する。
この構成により、本発明の第1実施形態によるプラズマ光源は、1対の同軸状電極10間に管状放電(後述する)を形成してプラズマを軸方向に封じ込めるようになっている。
この例において、電気ヒータ42は、絶縁部材16の大径部分の外周に設けられた溝内に配置され、ガイド電極14の大径中空部分14bを貫通する電源ラインを介して加熱電源装置44から電力が供給される。また、図示しない温度センサを備え、絶縁部材16を所定の温度に加熱し温度保持するようになっている。
この図において、絶縁部材16は、液化したプラズマ媒体が連続して浸透できない絶縁性緻密部分16aと、液化したプラズマ媒体が連続して浸透する多孔質部分16bとを一体成型した部分多孔体セラミックである。
絶縁性緻密部分16aは、中心電極12とガイド電極14の間を絶縁している。
また、この例において、多孔質部分16bは、絶縁性緻密部分16aの内部を通して絶縁部材16の背面から前面まで連続している。
また絶縁性緻密部分16aの粒径及び焼成温度は、液化したプラズマ媒体が連続して浸透できないように設定する。さらに多孔質部分16bの粒径及び焼成温度は、液化したプラズマ媒体が連続して浸透するように設定する。
なおこの例では、リザーバー18は、絶縁部材16の背面に開口し、リザーバー18の背面(図で左側)は、閉鎖板15で閉じられる。この閉鎖板15は、中心電極12の背面側に設けられたネジ軸12aと螺合するナット13により、着脱可能に固定されている。閉鎖板15は液化したプラズマ媒体の温度に耐える耐熱金属板又は耐熱セラミックであるのがよい。
この構成により、閉鎖板15の着脱により、リザーバー18にプラズマ媒体を適宜補給することができる。また、リザーバー18内部のプラズマ媒体は、この例ではSn,Li等であり、加熱装置40により液化されるようになっている。
ガス供給装置50は、リザーバー18内に不活性ガスを供給する。不活性ガスは、アルゴン、キセノン等の希ガスであるのが好ましい。
圧力調整装置52は、ガス供給装置50のガス供給ラインの途中に設けられ、不活性ガスの供給圧力を調整する。
なお、第1実施形態において、ガス供給装置50及び圧力調整装置52を省略してもよい。
また、電極導体(中心電極12とガイド電極14)をプラズマ媒体6の蒸気が凝集しない高温に維持する。
代わりに、同軸状電極10内(中心電極12とガイド電極14の間)に、絶縁部材16の多孔質部分16b表面(端面)からプラズマ媒体6を金属蒸気ガスとして供給してもよい。この場合、加熱装置40は、リザーバー18内のプラズマ媒体6を液化し、さらに、液化した当該プラズマ媒体6を気化させて金属蒸気ガスにする。なお、同軸状電極10内に、多孔質部分16b表面(端面)からプラズマ媒体6を金属蒸気ガスとして供給するために、絶縁性緻密部分16bは、気体を通さないように形成されるのがよい。
以下、これらの図を参照して、本発明の第1実施形態の装置によるプラズマ光発生方法を説明する。
なおこの際、左側の同軸状電極10の中心電極12は正電圧(+)、ガイド電極14は負電圧(-)に印加され、右側の同軸状電極10の中心電極12は負電圧(-)、そのガイド電極14は正電圧(+)に印加されている。
なお、両方のガイド電極14を接地させて0Vに保持し、一方の中心電極12を正電圧(+)に印加し、他方の中心電極12を負電圧(-)に印加してもよい。
この管状放電4が形成されると、図に符号5で示すプラズマ閉込め磁場(磁気ビン)が形成され、プラズマ3を半径方向及び軸方向に封じ込むことができる。
すなわち、磁気ビン5はプラズマ3の圧力により中央部は大きくその両側が小さくなり、プラズマ3に向かう軸方向の磁気圧勾配が形成され、この磁気圧勾配によりプラズマ3は中間位置に拘束される。さらにプラズマ電流の自己磁場によって中心方向にプラズマ3は圧縮(Zピンチ)され、半径方向にも自己磁場による拘束が働く。
この状態において、プラズマ3の発光エネルギーに相当するエネルギーを電圧印加装置30から供給し続ければ、高いエネルギー変換効率で、プラズマ光8(EUV)を長時間安定して発生させることができる。
第2実施形態では、第1実施形態の中心電極12、ガイド電極14、絶縁部材16、リザーバー18及び電気ヒータ42の代わりに、それぞれ、中心電極12B、ガイド電極14B、絶縁部材16B、リザーバー18B及び電気ヒータ42Bが設けられる。
リング状の絶縁部材16Bは、中心電極12Bとガイド電極14Bの間に位置する中空円筒形状の電気的絶縁体であり、中心電極12Bとガイド電極14Bの間を電気的に絶縁する。この例において、リング状の絶縁部材16Bは、多孔質セラミックである。
さらに加熱装置40は、この例ではリザーバー18Bを加熱する電気ヒータ42Bと、電気ヒータ42Bに加熱用の電力を供給する加熱電源装置44とからなり、リザーバー18B内のプラズマ媒体を加熱し液化するようになっている。
第2実施形態におけるその他の構成は、第1実施形態と同じである。ただし、第2実施形態では、ガス供給装置50及び圧力調整装置52を省略しない。
従って、プラズマ媒体を連続して供給することができ、かつ十分な供給速度でプラズマ媒体を供給でき、かつプラズマ媒体の供給量と蒸気圧を独立に制御することができる。
4 管状放電、5 プラズマ閉込め磁場、6 プラズマ媒体、
8 プラズマ光(EUV)、10 同軸状電極、
12、12B 中心電極、12a ネジ軸、13 ナット、
14、14B ガイド電極、15 閉鎖板、
16、16B 絶縁部材(部分多孔体セラミック)、
16a 絶縁性緻密部分、16b 多孔質部分、
18、18B リザーバー、20 放電環境保持装置、
30 電圧印加装置、32 正電圧源、
34 負電圧源、36 トリガスイッチ、
40 加熱装置、42、42B 電気ヒータ、
44 加熱電源装置
Claims (5)
- 対向配置された1対の同軸状電極と、該同軸状電極内のプラズマ媒体をプラズマ発生に適した温度及び圧力に保持する放電環境保持装置と、各同軸状電極に極性を反転させた放電電圧を印加する電圧印加装置と、を備え、1対の同軸状電極間に管状放電を形成してプラズマを軸方向に封じ込めるプラズマ光源であって、
前記各同軸状電極は、単一の軸線上に延びる棒状の中心電極と、該中心電極の対向する先端部を一定の間隔を隔てて囲むガイド電極と、前記中心電極とガイド電極の間を絶縁する絶縁部材とからなり、
該絶縁部材は、液化したプラズマ媒体が連続して浸透できない絶縁性緻密部分と、液化したプラズマ媒体が連続して浸透する多孔質部分とからなる部分多孔体セラミックであり、
前記絶縁性緻密部分は、プラズマ媒体を内部に保有するリザーバーを有し、前記多孔質部分は、絶縁性緻密部分の内部を通して前記リザーバーの内面と中心電極とガイド電極の間とを連通する、ことを特徴とするプラズマ光源。 - さらに、前記絶縁部材を加熱しその内部のプラズマ媒体を液化する温度調整可能な加熱装置を備える、ことを特徴とする請求項1に記載のプラズマ光源。
- 前記リザーバー内に不活性ガスを供給するガス供給装置と、
前記不活性ガスの供給圧力を調整する圧力調整装置と、を備えることを特徴とする請求項1または2に記載のプラズマ光源。 - 対向配置された1対の同軸状電極と、該同軸状電極内のプラズマ媒体をプラズマ発生に適した温度及び圧力に保持する放電環境保持装置と、各同軸状電極に極性を反転させた放電電圧を印加する電圧印加装置と、を備え、1対の同軸状電極間に管状放電を形成してプラズマを軸方向に封じ込めるプラズマ光源であって、
前記各同軸状電極は、単一の軸線上に延びる棒状の中心電極と、該中心電極の対向する先端部を一定の間隔を隔てて囲むガイド電極と、前記中心電極とガイド電極の間を絶縁する絶縁部材とからなり、
該絶縁部材は、中心電極の前記先端部側に位置する前面とその反対側の背面とを有する多孔体セラミックからなり、
さらに絶縁部材の背面に開口しプラズマ媒体を内部に保有する中空のリザーバーと、
該リザーバー内に不活性ガスを供給するガス供給装置と、
前記不活性ガスの供給圧力を調整する圧力調整装置と、
前記リザーバー内のプラズマ媒体を加熱し液化する温度調整可能な加熱装置と、を備えることを特徴とするプラズマ光源。 - 前記電圧印加装置は、一方の同軸状電極の中心電極にそのガイド電極より高い正の放電電圧を印加する正電圧源と、他方の同軸状電極の中心電極にそのガイド電極より低い負の放電電圧を印加する負電圧源と、前記正電圧源と負電圧源をそれぞれの同軸状電極に同時に印加するトリガスイッチとを有する、ことを特徴とする請求項1または4に記載のプラズマ光源。
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- 2010-08-31 CN CN201080038910.9A patent/CN102484938B/zh not_active Expired - Fee Related
- 2010-08-31 US US13/390,361 patent/US8648536B2/en not_active Expired - Fee Related
- 2010-08-31 KR KR1020127004074A patent/KR101415886B1/ko not_active IP Right Cessation
- 2010-09-01 TW TW099129421A patent/TWI432098B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
EP2475229A4 (en) | 2015-03-18 |
US20120146511A1 (en) | 2012-06-14 |
EP2475229A1 (en) | 2012-07-11 |
KR101415886B1 (ko) | 2014-07-04 |
KR20120049269A (ko) | 2012-05-16 |
CN102484938B (zh) | 2014-12-10 |
TWI432098B (zh) | 2014-03-21 |
TW201130388A (en) | 2011-09-01 |
CN102484938A (zh) | 2012-05-30 |
US8648536B2 (en) | 2014-02-11 |
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