WO2011022876A1 - 发光元件、其制造方法及其发光方法 - Google Patents
发光元件、其制造方法及其发光方法 Download PDFInfo
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- WO2011022876A1 WO2011022876A1 PCT/CN2009/073515 CN2009073515W WO2011022876A1 WO 2011022876 A1 WO2011022876 A1 WO 2011022876A1 CN 2009073515 W CN2009073515 W CN 2009073515W WO 2011022876 A1 WO2011022876 A1 WO 2011022876A1
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- light
- substrate
- luminescent
- emitting
- metal layer
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7784—Chalcogenides
- C09K11/7787—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/20—Luminescent screens characterised by the luminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/24—Supports for luminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/28—Luminescent screens with protective, conductive or reflective layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/18—Luminescent screens
- H01J2329/20—Luminescent screens characterised by the luminescent material
Definitions
- the present invention relates to the field of luminescent materials, and in particular to a luminescent element having a luminescent material of a glass substrate, a method of manufacturing the same, and a method of illuminating the same.
- field emission devices generally use luminescent glass as an illuminant, which has broad application prospects in the field of illumination and display, and has attracted widespread attention from research institutions at home and abroad.
- the field emission device works as follows: In a vacuum environment, the anode is opposite to the field emission cathode array (Field emissive
- the field emission device has a wide operating temperature range (-40°C ⁇ 80°C), short response time ( ⁇ lms), simple structure, power saving, and meets environmental protection requirements.
- materials such as phosphors, luminescent glasses, and luminescent films can be used as luminescent materials in field emission devices, but they all have the fundamental problem of low luminous efficiency, which greatly limits the application of field emission devices, especially in illumination. Application of the field.
- the present invention provides a light-emitting element having high light-emitting uniformity, high luminous efficiency, good stability, and simple structure, and a light-emitting element manufacturing method with simple preparation process and low cost.
- the present invention also provides a light-emitting element light-emitting method which is simple in operation, convenient and reliable, and greatly enhances luminous efficiency of a light-emitting material.
- a light-emitting element comprising a light-emitting substrate, wherein a surface of the light-emitting substrate is provided with a metal layer, the metal layer has a metal microstructure, and the light-emitting substrate comprises a light-emitting material having a chemical composition of ⁇ 2 3 3 : Eu material.
- a method of manufacturing a light-emitting element comprising the steps of:
- the luminescent substrate comprising a luminescent material having a chemical composition of ⁇ 0 3: Eu;
- the luminescent substrate and the metal layer are annealed under vacuum to form the metal layer into a metal microstructure, and after cooling, the light-emitting element is formed.
- a method of emitting a light-emitting element comprising the steps of:
- the cathode ray is emitted from the metal layer, and a surface plasmon is formed between the metal layer and the luminescent glass under the excitation of the cathode ray to illuminate the luminescent glass.
- a metal layer having a microstructure is formed on the light-emitting substrate, and the metal layer can form a surface plasma at the interface between the cathode and the light-emitting substrate, and the surface plasma is passed through the surface.
- the bulk effect greatly enhances the internal quantum efficiency of the luminescent substrate, that is, the spontaneous emission of the luminescent glass is enhanced, thereby greatly enhancing the luminescent efficiency of the luminescent substrate, thereby solving the problem of low luminous efficiency of the luminescent material.
- the light-emitting element includes a light-emitting substrate and a metal layer, the double-layer structure is simple, and has a uniform interface between the light-emitting substrate and the metal layer, thereby exhibiting high light-emitting uniformity and stability.
- the light-emitting method of the light-emitting element it is only necessary to emit a cathode ray to the metal layer, and a surface plasma is formed between the metal layer and the luminescent glass, that is, the luminous efficiency of the luminescent glass can be greatly enhanced, and the illuminating reliability is improved.
- FIG. 2 is a flow chart of a method for preparing a light-emitting element according to an embodiment of the present invention
- FIG. 3 is a flow chart showing a method of emitting light of a light-emitting element according to an embodiment of the present invention
- Example 4 is a luminescence spectrum of a light-emitting element of Example 1 in comparison with a luminescent glass without a metal layer, and the cathode ray emission spectroscopy test conditions are as follows: The acceleration voltage of the electron beam excitation is 5 kV.
- a light-emitting element 10 which comprises a light-emitting substrate 13 and a metal layer 14 provided on the surface of the light-emitting substrate 13.
- the metal layer 14 has a metal microstructure which is also referred to as a micro/nano structure. Further, the metal microstructure is aperiodic, i.e., composed of randomly arranged metal crystals.
- the luminescent substrate 13 may be a luminescent glass having a Y 2 0 3: Eu luminescent material, and the composition and composition of the glass are 20Na 2 O-20BaO. - 30B 2 O 3 -30SiO 2 , glass crucible with low melting point glass powder, not limited to the glass material described here.
- the mass percentage of the Y 2 0 3 : Eu luminescent material in the luminescent matrix is 5% to 35%.
- the light-emitting substrate 13 comprises a transparent or translucent substrate and a light-emitting film having a chemical composition of Y 2 O 3 : Eu formed on the substrate, and the metal layer 14 is formed on the light-emitting film surface.
- the metal layer 14 may be a metal which is chemically stable, such as a metal which is not easily oxidatively corroded, or a commonly used metal, preferably gold, silver, aluminum, copper, titanium, iron, nickel, cobalt. And at least one metal selected from the group consisting of chromium, platinum, palladium, magnesium, and zinc, more preferably formed of at least one metal selected from the group consisting of gold, silver, and aluminum.
- the metal species in the metal layer 14 may be their single metal or composite metal.
- the composite metal may be an alloy of two or more of the above metals.
- the metal layer 14 may be a silver-aluminum alloy layer or a gold-aluminum alloy layer, wherein the weight fraction of silver or gold is preferably 70% or more.
- the thickness of the metal layer 14 is preferably from 0.5 nm to 200 nm, more preferably from 1 nm to 100 nm.
- the above-described light-emitting element 10 is used as a light-emitting element, and can be widely applied to a high-luminance and high-speed operation light-emitting device, such as a field emission display, a field emission light source, or a large advertisement display card.
- a high-luminance and high-speed operation light-emitting device such as a field emission display, a field emission light source, or a large advertisement display card.
- Field emission For example, the anode is applied with a forward voltage to form an accelerating electric field with respect to the field emission cathode array, and electrons emitted from the cathode, that is, a cathode ray 16 is emitted to the metal layer 14, and a surface is formed between the metal layer 14 having the microstructure and the luminescent substrate 13.
- the plasma greatly improves the internal quantum efficiency of the luminescent substrate 13, that is, the spontaneous emission of the luminescent glass is enhanced, thereby greatly enhancing the luminescent efficiency of the luminescent substrate, thereby solving the problem of low luminous efficiency of the luminescent material.
- a metal layer is formed on the surface of the light-emitting substrate 13, a uniform interface is formed between the entire metal layer and the light-emitting substrate 13, and the uniformity of light emission can be improved.
- step S01 corresponding to the two structures of the light-emitting substrate 13 described above: the first one is a luminescent glass having a Y 2 0 3 : Eu luminescent material, and the second is a Y 2 0 3 : Eu luminescence A film is formed on the substrate.
- the preparation method of the first illuminating substrate 13 comprises the following steps: mixing the Y 2 O 3 : Eu luminescent material with the glass frit, then melting at a temperature of 1000-1300 ° C, and cooling to room temperature to obtain a miscellaneous Y 2 0 3 : Eu
- a luminescent glass of a luminescent material wherein the glass powder composition and component parts by mole are 20Na 2 O-20BaO-30B 2 O 3 -30SiO 2 .
- the Y 2 0 3 : Eu luminescent material is also a powder, which is mixed with the glass powder according to a mass ratio of 1:19 ⁇ 7:13, and the Y 2 0 3 : Eu luminescent material accounts for the mass percentage of the mixture after mixing. It is 5 to 35, and then melted at a temperature of 1000 to 1300 ° C, poured on a steel plate and cooled to room temperature to obtain a desired substrate 13 .
- the temperature is preferably 1200 °C.
- the second light-emitting substrate 13 is prepared by the following steps: A translucent or transparent substrate is used as a substrate, and a Y 2 O 3 : Eu light-emitting film is deposited on the substrate.
- the Y 2 0 3: Eu luminescent film is deposited on the substrate by magnetron sputtering, electron beam evaporation, chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition or spray thermal decomposition.
- the metal layer 14 formed here may be formed by depositing a metal source having good chemical stability, such as a metal which is not easily oxidized and corroded, or a commonly used metal. It is selected from at least one of gold, silver, aluminum, copper, titanium, iron, nickel, cobalt, chromium, platinum, palladium, magnesium, and zinc, and more preferably at least one metal selected from the group consisting of gold, silver, and aluminum.
- the metal layer 14 is formed on the surface of the light-emitting substrate 13 by physical or chemical vapor deposition, for example, but not limited to, on the surface of the light-emitting substrate 13 by sputtering or evaporation.
- the thickness of the metal layer 14 is preferably from 0.5 nm to 200 nm, more preferably from 1 nm to 100 nm.
- Step S03 is as follows: After the metal layer 14 is formed on the surface of the light-emitting substrate 13, vacuum annealing is performed at 50 ° C to 650 ° C, and the annealing time is 5 minutes to 5 hours, and then naturally cooled to room temperature. Among them, the annealing temperature is preferably from 100 ° C to 500 ° C, and the annealing time is preferably from 15 minutes to 3 hours.
- FIGS. 1 and 3 a flow chart of a method for emitting a light-emitting element according to an embodiment of the present invention will be described.
- the method of emitting light includes the following steps:
- S12 The cathode layer 16 is emitted to the metal layer 14. Under the excitation of the cathode ray 16, a surface plasmon is formed between the metal layer 14 and the luminescent substrate 13, so that the luminescent substrate 13 emits light.
- step S1 2 may be implemented by using a field emission display or an illumination source.
- the anode applies a forward voltage to the field emission cathode array to form an acceleration electric field, and the cathode emits a cathode ray 16 under the excitation of the cathode ray 16.
- the electron beam first penetrates the metal layer 14 to excite the luminescent substrate 13 to emit light.
- a surface plasmon effect is generated at the interface between the metal layer 14 and the luminescent substrate 13, and the internal quantum efficiency of the luminescent substrate 13 is greatly improved by this effect.
- the improvement that is, the spontaneous emission enhancement of the luminescent material, further greatly enhances the luminous efficiency of the luminescent material.
- the light-emitting substrate 13 has two structures.
- the electron beam penetrates the metal layer 14 to excite Y 2 0 3 : Eu light which is cumbersome in the light-emitting glass, and the surface plasmon is The surface of the luminescent glass of the cryptic Y 2 0 3 : Eu is formed between the metal layer 14 and promotes the luminescence of Y 2 0 3 : Eu.
- the electron beam penetrates the metal layer 14 to directly excite the Y 2 O 3 : Eu luminescent film, and a surface plasmon is formed between the Y 2 0 3: ⁇ u luminescent film and the metal layer 14 to promote Y 2 0 3 : Eu shines.
- Plasmon is a wave propagating along the interface between metal and medium, whose amplitude decays exponentially with distance from the interface.
- surface plasmon Surface plasmon Polaritons, SPPs
- the nature, dispersion relationship, excitation mode, coupling effect, etc. will all undergo major changes.
- the electromagnetic field induced by SPPs not only limits the propagation of light waves in sub-wavelength structures, but also generates and manipulates electromagnetic radiation from the optical frequency to the microwave band to achieve active control of light propagation. Therefore, the present embodiment utilizes the excitation performance of the SPPs to increase the optical density of the luminescent substrate and enhance its spontaneous emission rate.
- the coupling effect of the surface plasmon can be utilized to generate a coupling resonance when the luminescent substrate emits a pupil. The effect is to greatly improve the internal quantum efficiency of the light-emitting substrate and improve the luminous efficiency of the light-emitting substrate.
- a luminescent glass of luminescent material Then, a metal silver layer with a thickness of 2 nm is deposited on the surface of the luminescent glass by a magnetron sputtering device, and then placed in a vacuum environment with a vacuum of less than lxlO-3Pa, and the semi-small crucible is annealed at a temperature of 300 ° C, and then cooled.
- the light-emitting element of this example was obtained up to room temperature.
- the curve 11 in the figure is an illuminating spectrum of the illuminating glass without the metal silver layer;
- the curve 12 is the luminescence spectrum of the illuminating element with the metal structure prepared in the present embodiment, as can be seen from the figure, due to the metal layer and the illuminating A surface plasmon effect is generated between the glass, and the illuminating integrated intensity of the luminescent glass to which the metal structure is added from 350 nm to 700 nm of the present embodiment is an unexposed layer ⁇ illuminating glass illuminating integrated intensity with respect to the undoped lanthanum luminescent glass. 1.3 times, the luminescence performance is improved.
- Y 2 0 3 Eu phosphor powder and glass powder (composition and composition mole fraction is 20Na 2 O-20BaO-30B 2 O 3 -30SiO 2 ) was mixed and melted at a mass ratio of 1:19 to obtain a luminescent glass having a luminescent material of Y 2 0 3 : Eu.
- a metal gold layer having a thickness of 0.5 nm is deposited on the surface of the luminescent glass by using a magnetron sputtering device, and then placed in a vacuum environment with a degree of vacuum of less than lxlO-3Pa, and annealed at a temperature of 200 ° C for 1 hour, and then The film was cooled to room temperature to obtain a light-emitting element of this example.
- Y 2 0 3 Eu phosphor powder and glass powder (composition and composition mole fraction is 20Na 2 O-20BaO-30B 2 O 3
- a metal aluminum layer having a thickness of 200 nm is deposited on the surface of the luminescent glass by a magnetron sputtering apparatus, and then placed in a vacuum environment having a degree of vacuum of less than lxlO- 3 Pa, and annealed at a temperature of 500 ° C for 5 hours, and then The film was cooled to room temperature to obtain a light-emitting element of this example.
- a double-polished sapphire substrate having a size of lxlcm2 was selected, and a Y 2 0 3 : Eu luminescent film was prepared on the substrate by magnetron sputtering, and a thickness of 100 nm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus.
- the metal magnesium layer was then placed in a vacuum atmosphere having a degree of vacuum of less than 1 x 10 -3 Pa, annealed at a temperature of 650 ° C for 5 minutes, and then cooled to room temperature to obtain a light-emitting element of this example.
- a double-polished magnesium oxide substrate having a size of lxlcm2 was selected, and a Y 2 0 3 : Eu luminescent film was prepared on the substrate by molecular beam epitaxy, and a thickness of 1 nm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus.
- the metal palladium layer was then placed in a vacuum atmosphere having a degree of vacuum of less than 1 x 10 -3 Pa, and annealed at a temperature of 100 ° C for 3 hours, and then cooled to room temperature to obtain a light-emitting element of this example.
- a double-polished magnesium oxide substrate having a size of lxlcm2 was selected, and a Y 2 O 3 : Eu luminescent film was prepared on the substrate by a spray pyrolysis method, and a thickness of 5 nm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus.
- the metal platinum layer was then placed in a vacuum atmosphere having a degree of vacuum of less than 1 x 10 -3 Pa, annealed at a temperature of 450 ° C for 15 minutes, and then cooled to room temperature to obtain a light-emitting element of this example.
- a quartz substrate of double-sided polishing size of lxlcm2 was selected, and ⁇ 2 0 3 was obtained on the substrate by magnetron sputtering :
- Eu luminescent film using a electron beam evaporation device to deposit a metal iron layer having a thickness of 20 nm on the surface of the luminescent film Then, it was placed in a vacuum atmosphere having a degree of vacuum of less than lxlO-3Pa, annealed at a temperature of 50 ° C for 5 hours, and then cooled to room temperature to obtain a light-emitting element of this example.
- a quartz substrate of double-sided polishing size of lxlcm2 was selected, and ⁇ 2 0 3 was obtained on the substrate by magnetron sputtering :
- Eu luminescent film a metal titanium layer with a thickness of 10 nm is deposited on the surface of the luminescent film by an electron beam evaporation device, and then placed in a vacuum environment with a vacuum of less than lxlO- 3 Pa, and annealed at a temperature of 150 ° C for 2 hours. Then, it was cooled to room temperature to obtain a light-emitting element of this example.
- a quartz substrate of double-sided polishing size of lxlcm2 was selected, and ⁇ 2 0 3 was obtained on the substrate by magnetron sputtering :
- Eu luminescent film using a electron beam evaporation device to deposit a metal copper layer having a thickness of 50 nm on the surface of the luminescent film, and then placing it in a vacuum environment with a vacuum of less than lxlO-3Pa, and annealing at a temperature of 200 ° C for 2.5 hours. Then, it was cooled to room temperature to obtain a light-emitting element of this example.
- Eu luminescent film a metal nickel layer with a thickness of 40 nm is deposited on the surface of the luminescent film by an electron beam evaporation device, and then placed in a vacuum environment with a vacuum of less than lxlO- 3 Pa, and annealed at a temperature of 80 ° C for 4 hours. Then, it was cooled to room temperature to obtain a light-emitting element of this example.
- Example 13 [69] Selecting a double-polished quartz substrate of size lxlcm2, a Y 2 0 3 : Eu luminescent film was prepared on the substrate by magnetron sputtering, and a thickness of 180 nm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus. The metallic cobalt layer was then placed in a vacuum atmosphere having a degree of vacuum of less than 1 x 10 -3 Pa, and annealed at a temperature of 400 ° C for 1 hour, and then cooled to room temperature to obtain a light-emitting element of this example.
- Y 2 0 3 Eu phosphor powder and glass powder (composition and composition mole fraction is 20Na 2 O-20BaO-30B 2 O 3
- Y 2 0 3 Eu phosphor powder and glass powder (composition and component molar fraction of 20Na 2 O-20BaO-30B 2 O 3 -30SiO 2 ) are mixed and melted in a mass ratio of 3:7. It is a luminescent glass with a Y 2 0 3 : Eu luminescent material. Then, a metal silver-aluminum layer having a thickness of 15 nm is deposited on the surface of the luminescent glass by a magnetron sputtering apparatus. In the silver-aluminum layer, the parts by weight of silver and aluminum are about 90% and 10%, respectively, and then placed in a vacuum degree. In a vacuum atmosphere of less than lxlO-3Pa, the film was annealed at a temperature of 200 ° C for 1 hour, and then cooled to room temperature to obtain a light-emitting element of this example.
- a double-polished quartz substrate of size lxlcm2 was selected, and a Y 2 0 3 : Eu luminescent film was prepared on the substrate by magnetron sputtering, and a thickness of lOnm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus.
- Metallic silver-aluminum layer, in the silver-aluminum layer, the weight fraction of silver and aluminum is about 80% and 20%, respectively, and then placed in a vacuum of less than lxlO-3Pa, and annealed at a temperature of 150 ° C After 2 hours of treatment, it was cooled to room temperature to obtain a light-emitting element of this example.
- a double-polished magnesium oxide substrate having a size of lxlcm2 was selected, and a Y 2 0 3 : Eu luminescent film was prepared on the substrate by a magnetron sputtering method, and a thickness of lOnm was deposited on the surface of the luminescent film by an electron beam evaporation apparatus.
- a light-emitting substrate 13 is provided with a metal layer 14 having a microstructure which can form a surface at the interface between the cathode ray and the light-emitting substrate 13.
- the plasma by the surface plasmon effect, greatly increases the internal quantum efficiency of the luminescent substrate 13, thereby enhancing the spontaneous emission of the luminescent material, thereby greatly enhancing the luminescent efficiency of the luminescent material, thereby solving the problem of low luminous efficiency of the luminescent material.
- the light-emitting element 10 includes the light-emitting substrate 13 and the metal layer 14, the two-layer structure is simple, and has a uniform interface between the light-emitting substrate 13 and the metal layer 14, thereby exhibiting high light-emitting uniformity and stability.
- the light-emitting method of the light-emitting element it is only necessary to emit a cathode ray to the metal layer 14, and a surface plasmon is formed between the metal layer 14 and the light-emitting substrate 13, that is, the light-emitting efficiency of the light-emitting substrate 13 can be greatly enhanced, and the light-emitting reliability can be improved.
- a metal layer 14 needs to be formed on the light-emitting substrate 13, and then an annealing process is performed to obtain the desired light-emitting element 10.
- the preparation method is simple and low. Cost, with broad production and application prospects, especially for high-brightness and high-speed operation of light-emitting devices, such as field emission displays.
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Description
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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EP09848608.7A EP2473010B1 (en) | 2009-08-26 | 2009-08-26 | Light emitting element, manufacturing method and light emitting method thereof |
US13/392,384 US9101035B2 (en) | 2009-08-26 | 2009-08-26 | Luminescent element, its preparation method thereof and luminescene method |
PCT/CN2009/073515 WO2011022876A1 (zh) | 2009-08-26 | 2009-08-26 | 发光元件、其制造方法及其发光方法 |
JP2012525835A JP5612688B2 (ja) | 2009-08-26 | 2009-08-26 | 発光素子、その製造方法および発光方法 |
CN200980161087.8A CN102577611B (zh) | 2009-08-26 | 2009-08-26 | 发光元件、其制造方法及其发光方法 |
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WO2011022878A1 (zh) | 2009-08-26 | 2011-03-03 | 海洋王照明科技股份有限公司 | 发光元件、其制造方法及其发光方法 |
CN102714130B (zh) | 2009-08-26 | 2015-03-11 | 海洋王照明科技股份有限公司 | 含氮化物发光元件、其制造方法及其发光方法 |
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- 2009-08-26 CN CN200980161087.8A patent/CN102577611B/zh active Active
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JP5612688B2 (ja) | 2014-10-22 |
CN102577611A (zh) | 2012-07-11 |
EP2473010A1 (en) | 2012-07-04 |
US9101035B2 (en) | 2015-08-04 |
EP2473010B1 (en) | 2014-03-19 |
EP2473010A4 (en) | 2013-06-19 |
CN102577611B (zh) | 2014-04-02 |
JP2013502374A (ja) | 2013-01-24 |
US20120146499A1 (en) | 2012-06-14 |
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