WO2011002810A3 - Procédé de construction d'un algorithme de points finaux optimaux - Google Patents

Procédé de construction d'un algorithme de points finaux optimaux Download PDF

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Publication number
WO2011002810A3
WO2011002810A3 PCT/US2010/040477 US2010040477W WO2011002810A3 WO 2011002810 A3 WO2011002810 A3 WO 2011002810A3 US 2010040477 W US2010040477 W US 2010040477W WO 2011002810 A3 WO2011002810 A3 WO 2011002810A3
Authority
WO
WIPO (PCT)
Prior art keywords
endpoint
optimal
sensor data
algorithm
constructing
Prior art date
Application number
PCT/US2010/040477
Other languages
English (en)
Other versions
WO2011002810A2 (fr
WO2011002810A4 (fr
Inventor
Jiangxin Wang
Andrew James Perry
Vijayakumar C. Venugopal
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/555,674 external-priority patent/US8983631B2/en
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to KR1020117031561A priority Critical patent/KR101741271B1/ko
Priority to CN201080027296.6A priority patent/CN102804353B/zh
Priority to JP2012518588A priority patent/JP5693573B2/ja
Priority to SG2011085149A priority patent/SG176566A1/en
Publication of WO2011002810A2 publication Critical patent/WO2011002810A2/fr
Publication of WO2011002810A3 publication Critical patent/WO2011002810A3/fr
Publication of WO2011002810A4 publication Critical patent/WO2011002810A4/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Factory Administration (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Combined Controls Of Internal Combustion Engines (AREA)
  • Complex Calculations (AREA)

Abstract

L'invention porte sur un procédé d'identification automatique d'un algorithme de points finaux optimaux pour qualification d'un point d'extrémité de processus lors d'un traitement de substrat dans un système de traitement au plasma. Le procédé comprend la réception de données de détection à partir d'une pluralité de détecteurs lors du traitement d'au moins un substrat dans le système de traitement au plasma, les données de détecteur comprenant une pluralité de flux de signaux provenant d'une pluralité de canaux de détecteurs. Le procédé comprend également l'identification d'un domaine de points finaux, le domaine de points d'extrémité étant une période approximative pendant laquelle on s'attend à ce que le point final de processus se produise. Le procédé comprend en outre l'analyse de données du détecteur afin de générer un ensemble de signatures pour la fin potentielle. Le procédé comprend également la conversion de l'ensemble de signatures de points finaux potentiels en un ensemble d'algorithme de points finaux optimaux. Le procédé comprend en outre l'importation d'un algorithme de points finaux optimaux de l'ensemble d'algorithme de points finaux optimaux dans un environnement de production.
PCT/US2010/040477 2009-06-30 2010-06-29 Procédé de construction d'un algorithme de points finaux optimaux WO2011002810A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020117031561A KR101741271B1 (ko) 2009-06-30 2010-06-29 최적 종말점 알고리즘 구성 방법
CN201080027296.6A CN102804353B (zh) 2009-06-30 2010-06-29 构建最优终点算法的方法
JP2012518588A JP5693573B2 (ja) 2009-06-30 2010-06-29 最適なエンドポイント・アルゴリズムを構築する方法
SG2011085149A SG176566A1 (en) 2009-06-30 2010-06-29 Methods for constructing an optimal endpoint algorithm

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22210209P 2009-06-30 2009-06-30
US22202409P 2009-06-30 2009-06-30
US61/222,024 2009-06-30
US61/222,102 2009-06-30
US12/555,674 2009-09-08
US12/555,674 US8983631B2 (en) 2009-06-30 2009-09-08 Arrangement for identifying uncontrolled events at the process module level and methods thereof

Publications (3)

Publication Number Publication Date
WO2011002810A2 WO2011002810A2 (fr) 2011-01-06
WO2011002810A3 true WO2011002810A3 (fr) 2011-04-14
WO2011002810A4 WO2011002810A4 (fr) 2011-06-03

Family

ID=43411705

Family Applications (5)

Application Number Title Priority Date Filing Date
PCT/US2010/040468 WO2011002804A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil de prédiction de l'uniformité de la vitesse de gravure pour la qualification d'une chambre de plasma
PCT/US2010/040478 WO2011002811A2 (fr) 2009-06-30 2010-06-29 Agencement pour identification d'évènements non commandés au niveau du module de traitement et procédés liés
PCT/US2010/040456 WO2011002800A2 (fr) 2009-06-30 2010-06-29 Procédé et agencement pour surveillance et commande in-situ de processus pour des outils de traitement au plasma
PCT/US2010/040465 WO2011002803A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement
PCT/US2010/040477 WO2011002810A2 (fr) 2009-06-30 2010-06-29 Procédé de construction d'un algorithme de points finaux optimaux

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/US2010/040468 WO2011002804A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil de prédiction de l'uniformité de la vitesse de gravure pour la qualification d'une chambre de plasma
PCT/US2010/040478 WO2011002811A2 (fr) 2009-06-30 2010-06-29 Agencement pour identification d'évènements non commandés au niveau du module de traitement et procédés liés
PCT/US2010/040456 WO2011002800A2 (fr) 2009-06-30 2010-06-29 Procédé et agencement pour surveillance et commande in-situ de processus pour des outils de traitement au plasma
PCT/US2010/040465 WO2011002803A2 (fr) 2009-06-30 2010-06-29 Procédé et appareil pour maintenance préventive et prédictive de chambres de traitement

Country Status (6)

Country Link
JP (5) JP5693573B2 (fr)
KR (5) KR101741272B1 (fr)
CN (5) CN102473631B (fr)
SG (5) SG176565A1 (fr)
TW (5) TWI509375B (fr)
WO (5) WO2011002804A2 (fr)

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CN102473631B (zh) 2014-11-26
JP5693573B2 (ja) 2015-04-01
TW201108022A (en) 2011-03-01
TW201112302A (en) 2011-04-01
JP2012532461A (ja) 2012-12-13
KR101708078B1 (ko) 2017-02-17
CN102473590A (zh) 2012-05-23
TWI480917B (zh) 2015-04-11
CN102804929B (zh) 2015-11-25
KR101741272B1 (ko) 2017-05-29
CN102474968B (zh) 2015-09-02
CN102473590B (zh) 2014-11-26
JP2012532464A (ja) 2012-12-13
JP2012532460A (ja) 2012-12-13
WO2011002811A3 (fr) 2011-02-24
KR101741274B1 (ko) 2017-05-29
JP5624618B2 (ja) 2014-11-12
TWI536193B (zh) 2016-06-01
WO2011002803A3 (fr) 2011-03-03
KR101741271B1 (ko) 2017-05-29
CN102804353B (zh) 2015-04-15
TWI484435B (zh) 2015-05-11
TWI495970B (zh) 2015-08-11
KR101708077B1 (ko) 2017-02-17
SG176565A1 (en) 2012-01-30
WO2011002811A2 (fr) 2011-01-06
KR20120037419A (ko) 2012-04-19
WO2011002804A2 (fr) 2011-01-06
JP5599882B2 (ja) 2014-10-01
SG176147A1 (en) 2011-12-29
CN102473631A (zh) 2012-05-23
TW201129884A (en) 2011-09-01
KR20120047871A (ko) 2012-05-14
JP5629770B2 (ja) 2014-11-26
SG176567A1 (en) 2012-01-30
TWI509375B (zh) 2015-11-21
WO2011002800A3 (fr) 2011-04-07
WO2011002810A2 (fr) 2011-01-06
CN102804353A (zh) 2012-11-28
KR20120101293A (ko) 2012-09-13
CN102804929A (zh) 2012-11-28
WO2011002810A4 (fr) 2011-06-03
SG176564A1 (en) 2012-01-30
JP2012532462A (ja) 2012-12-13
TW201115288A (en) 2011-05-01
KR20120037420A (ko) 2012-04-19
KR20120037421A (ko) 2012-04-19
CN102474968A (zh) 2012-05-23
TW201129936A (en) 2011-09-01
WO2011002804A3 (fr) 2011-03-03
WO2011002803A2 (fr) 2011-01-06
SG176566A1 (en) 2012-01-30
JP2012532463A (ja) 2012-12-13
WO2011002800A2 (fr) 2011-01-06

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